Pixel array substrate and display device

Abstract

The invention provides a pixel array substrate and a display device. The pixel array substrate comprises a substrate, an insulating layer, a plurality of pixel structures, a protective layer and an alignment layer. The insulating layer and the plurality of pixel structures are disposed on the substrate. Each of the pixel structures includes an active element and a reflective electrode. The active element is disposed between the insulating layer and the substrate. The reflective electrode is disposed on the insulating layer and electrically connected to the active element. The protective layer is disposed on the pixel structures. And the material of the protective layer comprises silicon dioxide or silicon oxynitride. The plurality of reflective electrodes of the pixel structures are arranged at intervals along at least one direction. Each reflective electrode has an electrode sidewall along at least one direction. The protective layer covers the electrode sidewalls. A first angle between the side wall of the electrode and the surface of the insulating layer is larger than or equal to 60 degrees and smaller than or equal to 80 degrees, and the alignment layer is arranged on the protective layer.

Description

Technical Field

[0001] The present invention relates to a substrate and an electronic device, and particularly to a pixel array substrate and a display device. Background Art

[0002] A reflective display panel mainly uses natural light or ambient light as a light source for display. Since it can be displayed without being paired with backlight illumination, it has good energy-saving characteristics. Therefore, it is often applied in outdoor or well-lit fields, such as outdoor billboards, electronic price tags, sports watches, etc. Considering high reflectivity and low resistivity, silver is the first choice among all metal elements as a reflective layer.

[0003] Since silver has poor chemical resistance, heat resistance, and weather resistance, and has a high electrochemical migration rate, there are many problems and limitations in using silver to make the reflective electrode of a reflective or transflective display panel. To solve these problems, a technical solution using a silver alloy material to make the reflective layer has been proposed. However, the non-silver elements added to increase the chemical resistance and weather resistance of the silver reflective layer during the manufacturing process will have a negative impact on the optical properties of the reflective layer. In addition, a technical solution of covering a protective layer made of a transparent conductive material on the silver reflective layer has also been proposed. However, such a protective layer will cause a decrease in the reflectivity of the reflective layer and affect the color performance of the display panel. Summary of the Invention

[0004] The present invention is directed to a pixel array substrate having better optical characteristics of the reflective electrode and a higher manufacturing yield.

[0005] The present invention is directed to a display device having better color quality of reflective display and a high production yield.

[0006] According to an embodiment of the present invention, the pixel array substrate includes a substrate, an insulating layer, a plurality of pixel structures, a protective layer, and an alignment layer. The insulating layer and the plurality of pixel structures are disposed on the substrate. Each of these pixel structures includes an active element and a reflective electrode. The active element is disposed between the insulating layer and the substrate. The reflective electrode is disposed on the insulating layer and electrically connected to the active element. The protective layer is disposed on these pixel structures. The material of the protective layer includes silicon dioxide or silicon oxynitride. The plurality of reflective electrodes of these pixel structures are arranged at intervals along at least one direction. Each reflective electrode has an electrode sidewall along at least one direction. The protective layer covers the electrode sidewall. The first angle between the electrode sidewall and the surface of the insulating layer is greater than or equal to 60 degrees and less than or equal to 80 degrees. The alignment layer is disposed on the protective layer.

[0007] According to an embodiment of the present invention, a display device includes a pixel array substrate, a color filter substrate, and a liquid crystal layer. The pixel array substrate includes a substrate, an insulating layer, a plurality of pixel structures, a protective layer, and a first alignment layer. The insulating layer and the plurality of pixel structures are disposed on the substrate. Each of these pixel structures includes an active element and a reflective electrode. The active element is disposed between the insulating layer and the substrate. The reflective electrode is disposed on the insulating layer and electrically connected to the active element. The protective layer is disposed on these pixel structures. The material of the protective layer includes silicon dioxide or silicon oxynitride. The plurality of reflective electrodes of these pixel structures are arranged at intervals along at least one direction. Each reflective electrode has an electrode sidewall along at least one direction. The protective layer covers the electrode sidewall. The first angle between the electrode sidewall and the surface of the insulating layer is greater than or equal to 60 degrees and less than or equal to 80 degrees. The first alignment layer is disposed on the protective layer. The color filter substrate is disposed opposite to the pixel array substrate and is provided with a second alignment layer. The liquid crystal layer is sandwiched between the first alignment layer and the second alignment layer.

[0008] Based on the above, in the display device according to an embodiment of the present invention, the reflective electrode on the pixel array substrate is disposed on the insulating layer and covered with a protective layer. Since the material of the protective layer includes silicon dioxide or silicon oxynitride, in addition to having a good protection effect on the reflective electrode during the manufacturing process, the influence on the reflectivity of the reflective electrode can also be effectively reduced. In addition, by controlling the angle between the electrode sidewall of the reflective electrode and the surface of the insulating layer within the range of 60 degrees to 80 degrees, the protection effect of the protective layer on the electrode sidewall during the manufacturing process can be further improved. Description of the Drawings

[0009] Figure 1 is a front view schematic diagram of a display device according to a first embodiment of the present invention;

[0010] Figure 2 is Figure 1 a cross-sectional schematic diagram of the display device;

[0011] Figure 3 is Figure 2 an enlarged schematic diagram of a partial area of the display device;

[0012] Figure 4A and Figure 4B is a distribution curve graph of the reflectivity of the display device with respect to wavelength under different thicknesses of the protective layer;

[0013] Figure 5 is a distribution curve graph of the reflectivity of a display device of a comparative example with respect to wavelength;

[0014] Figure 6A and Figure 6B is a distribution curve graph of the reflectivity of another display device of a comparative example with respect to wavelength under different thicknesses of the protective layer;

[0015] Figure 7 is a front view schematic diagram of a display device according to a second embodiment of the present invention;

[0016] Figure 8 is a front view schematic diagram of a display device according to a third embodiment of the present invention;

[0017] Figure 9 is a front view schematic diagram of a display device according to a fourth embodiment of the present invention;

[0018] Figure 10 is a front view schematic diagram of a display device according to a fifth embodiment of the present invention.

[0019] Description of reference numerals

[0020] 10, 10A, 10B, 10C, 20: Display device;

[0021] 50: Front light module;

[0022] 100, 100A, 100B, 100C: Pixel array substrate;

[0023] 101, 201: Substrate;

[0024] 110: Gate insulating layer;

[0025] 120, 130: Insulating layer;

[0026] 130s: Surface;

[0027] 200: Color filter substrate;

[0028] 300: Liquid crystal layer;

[0029] A1, A2, A3: Angle;

[0030] AL1, AL2: Alignment layer;

[0031] BFL: Buffer layer;

[0032] BFLsw: Buffer sidewall;

[0033] CE: Common electrode layer;

[0034] CFL: Color filter layer;

[0035] d0, d1, d2, d3: Thickness;

[0036] DE: Drain;

[0037] DL: Data line;

[0038] ES: Light exit surface;

[0039] GE: Gate;

[0040] GL: Scanning line;

[0041] H1: First height;

[0042] H2: Second height;

[0043] IS: Incident light surface;

[0044] LGP: Light guide plate;

[0045] LS: Light source;

[0046] PA: Pixel area;

[0047] PTL, PTL-B: Protective layer;

[0048] PTLp1: First part;

[0049] PTLp2: Second part;

[0050] PTP, PTP”: Protection pattern;

[0051] PTPsw: Pattern sidewall;

[0052] PX: Pixel structure;

[0053] RE: Reflective electrode;

[0054] REs: Electrode surface;

[0055] REsw: Electrode sidewall;

[0056] RFL: Reflective layer;

[0057] S1: First surface;

[0058] S2: Second surface;

[0059] SC: Semiconductor pattern;

[0060] SE: Source electrode;

[0061] T: Active element;

[0062] TH: Contact hole;

[0063] W: Width;

[0064] X, Y, Z: Directions;

[0065] Z1: Region. Detailed implementation manners

[0066] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0067] Figure 1 is a front view schematic diagram of a display device according to a first embodiment of the present invention. Figure 2 is Figure 1 a cross-sectional schematic diagram of the display device. Figure 3 is Figure 2 an enlarged schematic diagram of a partial area Z1 of the display device. Figure 4A and Figure 4B are graphs showing the distribution of reflectance versus wavelength of the display device under protective layers of different thicknesses. Figure 5 is a graph showing the distribution of reflectance versus wavelength of a display device of a comparative example. Figure 6A and Figure 6B are graphs showing the distribution of reflectance versus wavelength of another display device of a comparative example under protective layers of different thicknesses.

[0068] Please refer to Figures 1 to 3 First, it should be noted that, for the sake of clear presentation, Figure 1 only the scan lines GL, data lines DL, and reflective electrodes RE of the display device 10 are shown. The display device 10 includes a pixel array substrate 100. The pixel array substrate 100 includes a substrate 101, a plurality of scan lines GL, a plurality of data lines DL, and a plurality of pixel structures PX. The material of the substrate 101 may include glass, quartz, a polymer (such as polyimide, polycarbonate, polymethyl methacrylate, or other suitable flexible sheets), or other suitable sheets.

[0069] In this embodiment, the plurality of data lines DL may be arranged at intervals along the direction X and extend in the direction Y, and the plurality of scan lines GL may be arranged at intervals along the direction Y and extend in the direction X. More specifically, these data lines DL intersect these scan lines GL and define a plurality of pixel regions PA. The plurality of pixel structures PX are disposed on the substrate 101 and are respectively located within these pixel regions PA.

[0070] Specifically, each of these pixel structures PX may include an active element T and a reflective electrode RE that are electrically connected to each other. In this embodiment, the method of forming the active element T may include the following steps: sequentially forming a gate electrode GE, a gate insulating layer 110, a semiconductor pattern SC, a source electrode SE, and a drain electrode DE on a substrate 101. The semiconductor pattern SC is disposed overlapping the gate electrode GE. The source electrode SE and the drain electrode DE overlap the semiconductor pattern SC and are in electrical contact with different two regions of the semiconductor pattern SC. In this embodiment, the gate electrode GE of the active element T is optionally disposed below the semiconductor pattern SC to form a bottom-gate thin film transistor (bottom-gate TFT), but is not limited thereto. In other embodiments, the gate electrode of the active element may also be optionally disposed above the semiconductor pattern SC to form a top-gate thin film transistor (top-gate TFT).

[0071] Furthermore, an insulating layer 120 and an insulating layer 130 may be sequentially covered on the active element T. In this embodiment, the insulating layer 120 is, for example, a passivation layer, and the insulating layer 130 is, for example, a planarization layer. The reflective electrode RE of the pixel structure PX is disposed on the surface 130s of the insulating layer 130 and is electrically connected to the drain electrode DE of the active element T through a contact hole TH of the insulating layer 120 and the insulating layer 130.

[0072] It should be noted that the gate electrode GE, the source electrode SE, the drain electrode DE, the semiconductor pattern SC, the gate insulating layer 110, the passivation layer (i.e., the insulating layer 120), and the planarization layer (i.e., the insulating layer 130) may be respectively implemented by any gate electrode, any source electrode, any drain electrode, any semiconductor pattern, any gate insulating layer, any passivation layer, and any planarization layer well-known to those skilled in the art for a reflective display panel, and the gate electrode GE, the source electrode SE, the drain electrode DE, the semiconductor pattern SC, the gate insulating layer 110, the passivation layer, and the planarization layer may be respectively formed by any method well-known to those skilled in the art, so details are not described herein.

[0073] In this embodiment, the display device 10 further includes a color filter substrate 200 and a liquid crystal layer 300. The liquid crystal layer 300 is disposed between the pixel array substrate 100 and the color filter substrate 200. That is, the display device 10 of this embodiment may be a reflective liquid crystal display panel, but is not limited thereto. In other embodiments, the display device may also be a transflective liquid crystal display panel.

[0074] For example, in this embodiment, a color filter layer CFL and a common electrode layer CE may be provided on the substrate 201 of the color filter substrate 200, but not limited thereto. The electric field generated between the common electrode layer CE and the reflective electrode RE is adapted to drive a plurality of liquid crystal molecules (not shown) of the liquid crystal layer 300 to rotate to form an alignment state corresponding to the direction and intensity of the electric field. By changing the alignment state of these liquid crystal molecules, the polarization state of the light passing through the liquid crystal layer 300 is changed to form an outgoing light brightness corresponding to the alignment state.

[0075] In order to orient the arrangement of a plurality of liquid crystal molecules in the liquid crystal layer 300 in a natural state (i.e., without external force), the pixel array substrate 100 may further include an alignment layer AL1 provided on the plurality of reflective electrodes RE, and the color filter substrate 200 may further include another alignment layer AL2 provided on the common electrode layer CE. The liquid crystal layer 300 is sandwiched between the alignment layer AL1 and the alignment layer AL2.

[0076] In this embodiment, the reflective electrode RE may include a reflective layer RFL and a buffer layer BFL, and the buffer layer BFL connects the reflective layer RFL and the insulating layer 130. By providing the buffer layer BFL, the adhesion between the reflective electrode RE and the insulating layer 130 can be effectively improved.

[0077] The material of the buffer layer BFL may be a light-transmitting or light-impermeable conductive material. For example, the material of the buffer layer BFL may include metal oxides (such as ITO, IZO, MoTaO x or MoO x ), Mo, MoTa, AlNd, Ti, or Cr. However, the present invention is not limited thereto. In another variant embodiment, the number of buffer layers BFL of the reflective electrode RE may also be multiple layers. That is, a stacked structure of a plurality of buffer layers BFL may be provided between the reflective electrode RE and the insulating layer 130, and the materials of these buffer layers BFL may be different.

[0078] In this embodiment, the material of the reflective layer RFL is, for example, silver element or a metal alloy material containing silver element. Preferably, the thickness d0 of the reflective layer RFL along the direction Z may be greater than or equal to 700 angstroms and less than or equal to 2000 angstroms, so that the reflective layer RFL has a better reflectivity, for example, greater than or equal to 90%. In order to prevent the material of the reflective layer RFL from deteriorating and affecting the optical properties (such as the color change and / or reflectivity decrease of the reflective layer RFL) due to long-term exposure to air during the manufacturing process, the display device 10 further includes a protective layer PTL covering the reflective layer RFL, and the alignment layer AL1 is provided on the protective layer PTL.

[0079] It should be particularly noted that the material of the protective layer PTL includes, for example, silicon dioxide (SiO2) or silicon oxynitride (SiO x Ny )。Since the protective layer PTL made of silicon dioxide has a low refractive index and a high transmittance for light, its influence on the reflectivity of the reflective electrode RE can be effectively reduced.

[0080] Preferably, the thickness d1 of the protective layer PTL along the normal direction (e.g., direction Z) of the surface 130s of the insulating layer 130 can be greater than or equal to 1000 angstroms and less than or equal to 3000 angstroms. As Figure 4A shown, when the thickness of the protective layer PTL is 1000 angstroms, the reflectivity of the display device 10 in both the red light band (e.g., 620nm - 750nm), the green light band (e.g., 500nm - 580nm), or the blue-violet light band (e.g., 380nm - 450nm) is greater than 0.9. As Figure 4B shown, when the thickness of the protective layer PTL is further increased to 2500 angstroms, the reflectivity of the display device 10 in some bands (e.g., the red light band) can be further improved.

[0081] Please also refer to Figure 4A , Figure 4B and Figure 5 . Compared with the display device without the protective layer PTL (i.e., the comparative example), the reflectivity performance of the display device 10 in this embodiment is equivalent to that of the display device in the comparative example whether the thickness of the protective layer PTL is 1000 angstroms or 2500 angstroms. For example, the reflectivity in the red light band, the green light band, and the blue light band is generally higher than 0.9.

[0082] On the other hand, in the current technical solution of using indium tin oxide (ITO) to make the protective layer PTL, the reflectivity of its display device in each band is lower than 0.9, and in some bands (e.g., the red light band and the blue-violet light band), it is even lower than 0.8 (as Figure 6A shown). Among them, Figure 6A the shown reflectivity performance is for the condition that the thickness of the ITO layer (i.e., the protective layer) is 1000 angstroms. Even if the thickness of the ITO layer is reduced (e.g., 150 angstroms) to improve the reflectivity, the improvement of its reflectivity in the blue-violet light band is still not significant (as Figure 6B shown). In addition, the reduction of the thickness of the ITO layer will significantly reduce the protection effect of the protective layer PTL on the reflective electrode.

[0083] In other words, in this embodiment, the protective layer PTL made of silicon dioxide, in addition to achieving a reflectivity performance equivalent to that of the display device without the protective layer, its thickness is significantly higher than that of the currently used protective layer made of ITO. Therefore, the protection effect on the reflective electrode is better than that of the currently used protective layer made of ITO.

[0084] Specifically, to enhance the protection effect of the protective layer, the protective layer in this embodiment may also be made of silicon oxynitride (SiO x N y ). By adjusting the nitrogen-oxygen ratio, the desired light transmittance and protection effect can be achieved. In some other embodiments, the protective layer may also be made of a wide bandgap material, such as Al2O3, HfO2, MgF2, or AlF3 with high light transmittance.

[0085] Please refer to Figures 1 to 3 again. In this embodiment, the multiple reflective electrodes RE of the multiple pixel structures PX are respectively arranged at intervals along directions X and Y, and each has an electrode sidewall REsw along direction X or Y. More specifically, the reflective layer RFL of the reflective electrode RE defines this electrode sidewall REsw. The protective layer PTL covers the electrode sidewall REsw. It should be particularly noted that the angle A1 between the electrode sidewall REsw and the surface 130s of the insulating layer 130 is greater than or equal to 60 degrees and less than or equal to 80 degrees. Accordingly, it can be ensured that a sufficiently thick protective layer PTL is formed on the electrode sidewall REsw of the reflective electrode RE, thereby improving the protection effect of the protective layer PTL on the electrode sidewall REsw during the manufacturing process.

[0086] From another perspective, the width W of the positive projection of the electrode sidewall REsw of the reflective electrode RE on the surface 130s of the insulating layer 130 along direction X (or Y) can be less than 0.1 micrometer to reduce the influence of the inclination angle (i.e., angle A1) of the electrode sidewall REsw after etching on the reflection area.

[0087] In this embodiment, the buffer layer BFL of the reflective electrode RE has a buffer sidewall BFLsw along direction X (or Y), and the protective layer PTL also extends to cover this buffer sidewall BFLsw. There is an angle A2 between the buffer sidewall BFLsw and the surface 130s of the insulating layer 130, and the angle A2 is preferably greater than or equal to 45 degrees and less than or equal to 90 degrees. Preferably, the thickness d2 of the buffer layer BFL along direction Z can be greater than or equal to 50 angstroms and less than or equal to 300 angstroms.

[0088] Some other embodiments will be listed below to illustrate the present disclosure in detail. The same components will be labeled with the same symbols, and the description of the same technical content will be omitted. For the omitted part, please refer to the foregoing embodiments and will not be repeated hereinafter.

[0089] Figure 7 is a front view schematic diagram of a display device according to the second embodiment of the present invention. Please refer to Figure 7 , compared with Figure 3For the display device 10, the pixel array substrate 100A of the display device 10A in this embodiment further includes a plurality of protection patterns PTP, which are disposed between the plurality of reflective electrodes RE of the plurality of pixel structures PX and the protection layer PTL, and overlap these reflective electrodes RE along the direction Z respectively. Since other components and configuration relationships in this embodiment are similar to those of Figure 3 the display device 10, for detailed description, please refer to the relevant paragraphs of the foregoing embodiment, and will not be elaborated herein.

[0090] In this embodiment, the material of the protection pattern PTP is, for example, silicon dioxide, but is not limited thereto. In other embodiments, the material of the protection pattern PTP may further include silicon oxynitride, or metal oxide (such as indium tin oxide). For example, in the manufacturing process, the protection pattern PTP in this embodiment can be first formed by a dry etching process. After defining the protection pattern PTP, a wet etching process is used to etch the reflective electrode RE, but is not limited thereto. Since the etching selectivity of the wet etching for the protection pattern PTP is extremely small, in order to avoid the phenomenon of tip chamfering after etching, the thickness d3 of the protection pattern PTP along the direction Z can be less than or equal to 150 angstroms.

[0091] After the etching process of the reflective electrode RE is completed, a protection layer PTL is formed to cover the protection pattern PTP and the reflective electrode RE. In this embodiment, the protection pattern PTP has a pattern sidewall PTPsw covered by the protection layer PTL, and an angle A3 is formed between this pattern sidewall PTPsw and the electrode surface REs of the corresponding reflective electrode RE. Preferably, the angle A3 can be greater than or equal to 45 degrees and less than or equal to 90 degrees.

[0092] In this embodiment, the thickness d1 of the protection layer PTL is preferably greater than or equal to 50 angstroms and less than or equal to 500 angstroms, but is not limited thereto. In another variant embodiment, the thickness d1 of the protection layer PTL can also be increased to the range of 1000 angstroms to 3000 angstroms to enhance the reflectivity of the reflective electrode RE for short-wavelength light.

[0093] Figure 8 is a front view schematic diagram of a display device according to the third embodiment of the present invention. Please refer to Figure 8 , the difference between the display device 10B in this embodiment and Figure 3 the display device 10 is only that: the configuration manner of the protection layer is different. In the display device 10B of this embodiment, the protection layer PTL-B of the pixel array substrate 100B also has a planarizing effect on the area between the patterned plurality of reflective electrodes RE.

[0094] Specifically, the protective layer PTL-B has two portions along the direction Z. The first portion PTLp1 overlaps the plurality of reflective electrodes RE, and the second portion PTLp2 does not overlap the plurality of reflective electrodes RE. The first portion PTLp1 and the second portion PTLp2 respectively have a first surface S1 and a second surface S2 that face away from the insulating layer 130 and are substantially aligned. From another perspective, the first surface S1 has a first height H1 relative to the surface 130s of the insulating layer 130, and the second surface S2 has a second height H2 relative to the surface 130s of the insulating layer 130. Due to factors such as process precision or measurement tolerance, the allowable variation between the first height H1 and the second height H2 is less than 2.5%. In this case, the variation is calculated as the absolute value of the difference between H1 and H2 divided by the average of the sum of H1 and H2. Preferably, the first height H1 is substantially equal to the second height H2.

[0095] In this embodiment, by using the protective layer PTL-B to planarize the area between the plurality of reflective electrodes RE, the alignment effect of the alignment layer AL1 between these reflective electrodes RE can be further improved.

[0096] Figure 9 is a front view schematic diagram of a display device according to a fourth embodiment of the present invention. Please refer to Figure 9 , compared with Figure 8 the display device 10B, the pixel array substrate 100C of the display device 10C in this embodiment further includes a plurality of protection patterns PTP”, which are disposed between the plurality of reflective electrodes RE of the plurality of pixel structures PX and the protective layer PTL-B, and overlap these reflective electrodes RE along the direction Z respectively. Since the other components and configuration relationships in this embodiment are similar to Figure 8 the display device 10B, for the detailed description, please refer to the relevant paragraphs of the foregoing embodiments and will not be repeated here.

[0097] In this embodiment, the material of the protection pattern PTP” is, for example, silicon dioxide, but is not limited thereto. In other embodiments, the material of the protection pattern PTP” may further include silicon oxynitride, or metal oxide (such as indium tin oxide). For example, in the process, the protection pattern PTP” in this embodiment can be first formed by a dry etching process. After defining the protection pattern PTP”, the reflective electrodes RE are etched by a wet etching process, but are not limited thereto.

[0098] After the etching process of the reflective electrode RE is completed, a protective layer PTL-B is formed to cover the protective pattern PTP" and the reflective electrode RE. In this embodiment, the protective pattern PTP" has a pattern sidewall PTPsw covered by the protective layer PTL-B, and there is an angle A3 between this pattern sidewall PTPsw and the electrode surface REs of the corresponding reflective electrode RE. Preferably, the angle A3 can be greater than or equal to 45 degrees and less than or equal to 90 degrees. It should be particularly noted that, different from Figure 7 the protective pattern PTP, the pattern sidewall PTPsw of the protective pattern PTP" in this embodiment can be aligned with the electrode sidewall REsw of the reflective electrode RE.

[0099] In this embodiment, the protective layer PTL-B also has a planarizing effect on the area between the patterned reflective electrodes RE. For a detailed description, please refer to the relevant paragraphs of the foregoing embodiments, which will not be elaborated here.

[0100] Figure 10 is a front view schematic diagram of a display device according to the fifth embodiment of the present invention. Please refer to Figure 10 , compared with Figure 2 the display device 10, the display device 20 of this embodiment further includes a backlight module 50, which is disposed on the side of the color filter substrate 200 facing away from the liquid crystal layer 300. The backlight module 50 may include a light guide plate LGP and a light source LS. The light guide plate LGP has an incident light surface IS and an exit light surface ES connected to each other. Among them, the light source LS is disposed on one side of the incident light surface IS of the light guide plate LGP, and the exit light surface ES faces the plurality of reflective electrodes RE.

[0101] The light source LS is adapted to emit light toward the incident light surface IS. These lights can be emitted through the exit light surface ES after being transmitted by the light guide plate LGP and irradiate on the reflective electrodes RE to serve as a lighting source when the external ambient light or natural light is insufficient. That is to say, by setting the backlight module 50, the use requirements of the display device 20 in a relatively dim environment can be met.

[0102] In summary, in the display device of an embodiment of the present invention, the reflective electrodes on the pixel array substrate are disposed on the insulating layer and covered with a protective layer. Since the material of the protective layer includes silicon dioxide or silicon oxynitride, in addition to having a good protection effect on the reflective electrodes during the process, the influence on the reflectivity of the reflective electrodes can also be effectively reduced. In addition, by controlling the angle between the electrode sidewall of the reflective electrode and the surface of the insulating layer within the range of 60 degrees to 80 degrees, the protection effect of the protective layer on the electrode sidewall during the process can be further improved.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A pixel array substrate, characterized in that, Comprising: A substrate; An insulating layer disposed on the substrate; A plurality of pixel structures disposed on the substrate, each comprising: An active element disposed between the insulating layer and the substrate; and A reflective electrode disposed on the insulating layer and electrically connected to the active element; A protective layer disposed on the plurality of pixel structures, the material of the protective layer comprising silicon dioxide or silicon oxynitride, wherein the plurality of reflective electrodes of the plurality of pixel structures are arranged at intervals along at least one direction, each of the plurality of reflective electrodes has an electrode sidewall along the at least one direction, the protective layer covers the electrode sidewall, and there is a first angle between the electrode sidewall and the surface of the insulating layer, and the first angle is greater than or equal to 60 degrees and less than or equal to 80 degrees; and An alignment layer disposed on the protective layer.

2. The pixel array substrate according to claim 1, wherein Each of the plurality of reflective electrodes comprises: A reflective layer; and A buffer layer disposed between the reflective layer and the insulating layer, wherein the material of the buffer layer comprises a metal oxide.

3. The pixel array substrate according to claim 2, wherein The buffer layer has a buffer sidewall, the protective layer also covers the buffer sidewall, and there is a second angle between the buffer sidewall and the surface of the insulating layer, and the second angle is greater than or equal to 45 degrees and less than or equal to 90 degrees.

4. The pixel array substrate according to claim 1, wherein The width of the positive projection of the electrode sidewall on the surface of the insulating layer along the at least one direction is less than 0.1 micrometer.

5. The pixel array substrate according to claim 1, characterized in that, Further comprising: A plurality of protection patterns disposed between the plurality of reflective electrodes of the plurality of pixel structures and the protective layer and respectively overlapping the plurality of reflective electrodes, wherein there is a third angle between the pattern sidewall of each of the plurality of protection patterns and the electrode surface of a corresponding one of the reflective electrodes, and the third angle is greater than or equal to 45 degrees and less than or equal to 90 degrees.

6. The pixel array substrate according to claim 5, wherein, The material of the plurality of protection patterns comprises silicon dioxide or silicon oxynitride.

7. The pixel array substrate according to claim 1, wherein The protective layer has a first portion overlapping the plurality of reflective electrodes and a second portion not overlapping the plurality of reflective electrodes. The first portion and the second portion respectively have a first surface and a second surface facing away from the substrate. The first surface has a first height relative to the surface of the insulating layer, the second surface has a second height relative to the surface of the insulating layer, and the variation degree between the first height and the second height is less than 2.5%.

8. A display device, characterized in that, Comprising: A pixel array substrate, comprising: A substrate; An insulating layer disposed on the substrate; A plurality of pixel structures disposed on the substrate, each comprising: An active element disposed between the insulating layer and the substrate; and A reflective electrode disposed on the insulating layer and electrically connected to the active element; A protective layer is disposed on the plurality of pixel structures. The material of the protective layer includes silicon dioxide or silicon oxynitride. The plurality of reflective electrodes of the plurality of pixel structures are arranged at intervals along at least one direction. Each of the plurality of reflective electrodes has an electrode sidewall along the at least one direction. The protective layer covers the electrode sidewall. There is a first angle between the electrode sidewall and the surface of the insulating layer, and the first angle is greater than or equal to 60 degrees and less than or equal to 80 degrees; and A first alignment layer is disposed on the protective layer; A color filter substrate is disposed opposite to the pixel array substrate and is provided with a second alignment layer; and A liquid crystal layer is disposed between the first alignment layer and the second alignment layer.

9. The display device according to claim 8, wherein It further includes: A plurality of protection patterns are disposed between the plurality of pixel structures and the protective layer and respectively overlap the plurality of reflective electrodes. The pattern sidewall of each of the plurality of protection patterns is aligned with the electrode sidewall of one of the plurality of reflective electrodes.

10. The display device according to claim 8, wherein It further includes: A front light module is disposed on the side of the color filter substrate facing away from the liquid crystal layer and includes: A light guide plate having an incident light surface and an outgoing light surface connected to each other. The outgoing light surface faces the plurality of reflective electrodes; And A light source is disposed on one side of the incident light surface of the light guide plate.

Images