Bipolar device gamma irradiation damage simulation and evaluation system based on multi-software cooperation
Through the combination of Geant4 and Sentaurus TCAD software, a bipolar device γ irradiation damage simulation system was established, which solved the problem of inaccurate prediction of performance degradation under low dose rate γ irradiation, achieved full analysis from material to circuit, and improved prediction accuracy and design optimization.
Patent Information
- Application Number
- CN202510240316.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-03
- Publication Date
- 2025-07-04
AI Technical Summary
The prediction of performance degradation of existing bipolar devices under low dose rate gamma irradiation is inaccurate. Traditional models fail to consider the interactions and nonlinear coupling relationships between devices, and cannot comprehensively evaluate the overall performance of devices in a radiation environment.
Combined with Geant4 and Sentaurus TCAD software, a comprehensive bipolar device γ irradiation damage simulation and evaluation system is established. By simulating γ particle transportation, device physical structure modeling, damage model integration and parameter optimization, the complete analysis from material to circuit is achieved, and the SPICE model is used for circuit-level simulation and the damage model is optimized.
It realizes accurate performance prediction of bipolar devices under low dose rate γ irradiation, saves test time and cost, provides a basis for radiation-resistant reinforcement, and improves the reliability and design optimization of the device in a radiation environment.
Smart Images
Figure CN120257900A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of radiation effects of semiconductors, and more specifically, it relates to a simulation and evaluation system for γ-irradiation damage of bipolar devices based on multi-software collaboration. Background Art
[0002] Due to their ability to handle both current and voltage simultaneously in a circuit, bipolar devices play an important role in multiple high-tech fields. Especially in the aerospace field, these devices need to operate stably in extreme radiation environments to ensure the success of flight missions. In the field of nuclear medicine, bipolar devices are used in medical imaging and treatment equipment, which also need to operate reliably in radiation environments. Low-dose-rate γ-irradiation refers to a type of radiation with a relatively low radiation dose but a long duration. This type of radiation is particularly common in the space environment, such as cosmic rays and solar winds outside the Earth's atmosphere. In nuclear reactors and certain medical devices, low-dose-rate γ-irradiation is also inevitable. Research has shown that bipolar devices exhibit an enhanced low-dose-rate damage effect (ELDRS) under this low-dose-rate γ-irradiation, that is, the performance degradation rate of the devices is faster than expected, which poses a challenge to the long-term stability and reliability of the devices.
[0003] Traditional radiation damage models are mainly based on high-dose-rate irradiation data, which are usually obtained from high-dose-rate radiation experiments under laboratory conditions. These models have limitations in predicting the long-term effects under low-dose-rate irradiation because they do not take into account the special damage mechanisms under low-dose-rate irradiation. This results in the inability of these models to accurately predict the performance degradation of devices under low-dose-rate γ-irradiation in practical applications. Current numerical simulation methods mainly focus on the damage caused by a single particle to the device, without considering the interaction between devices in the actual circuit and the impact on the overall circuit performance. In addition, these methods often ignore the non-linear coupling relationship between displacement damage and ionization damage, which has an important impact on device performance in the actual radiation environment. Therefore, these methods cannot comprehensively evaluate the overall performance of bipolar devices in a radiation environment.
[0004] In summary, establishing a simulation and evaluation system for γ-irradiation damage of bipolar devices based on multi-software collaboration is of great significance for predicting and evaluating device damage and improving the radiation resistance performance of devices. Summary of the Invention
[0005] The purpose of the present invention is to provide a simulation and evaluation system for γ-irradiation damage of bipolar devices based on multi-software collaboration. The model is established based on two software, Geant4 and Sentaurus TCAD, and combined with experimental data to establish an irradiation damage prediction model, which can quickly and accurately predict the performance changes of bipolar devices and circuits under low-dose γ-irradiation conditions.
[0006] The above technical object of the present invention is achieved by the following technical solutions: A simulation and evaluation system for γ-irradiation damage of bipolar devices based on multi-software collaboration, the system includes the following modules: Irradiation test module, used to determine the device model to be detected and the corresponding integrated circuit type, and randomly select devices and integrated circuits of the same batch number, with electrical parameters meeting the test plan and passing the screening as radiation effect test samples; Experimental parameter determination module, used to determine experimental parameters and take point measurements of the electrical parameters of the device during the experiment and record data; Geant4 simulation module, used to simulate the transport process of γ particles in bipolar devices; Sentaurus TCAD modeling module, used to establish a meshed device physical structure, and optimize and calibrate the process parameters of the device with the electrical parameters and curves in the device product manual; Damage model integration module, used to take the simulation results in Geant4 as input, add the device model established by Sentaurus TCAD software, and obtain the damage model of bipolar devices under γ-irradiation; Parameter optimization module, used to compare the electrical parameter changes of the device under the TCAD irradiation damage model with the electrical parameters of the device under actual test conditions, and make the results of numerical simulation and irradiation test tend to be consistent by continuously optimizing the model; Circuit simulation module, the system also includes a model verification module, used to compare the test data under integrated circuit irradiation with the parameters of the mixed model under irradiation established by SPICE model and Sentaurus TCAD, further analyze the sensitive nodes and damage mechanism of the integrated circuit under low-dose-rate γ-irradiation, and improve the model.
[0007] The present invention is further set as: used to compare the test data under integrated circuit irradiation with the parameters of the mixed model under irradiation established by SPICE model and TCAD, further analyze the sensitive nodes and damage mechanism of the integrated circuit under low-dose-rate γ-irradiation, and improve the model.
[0008] The present invention is further set as: the experimental parameters in the experimental parameter determination module include irradiation source, dose rate, total dose, test temperature, device bias and load.
[0009] The present invention is further set as: the system uses Geant4 to simulate the interaction between particles and device materials to evaluate the damage of the device under the irradiation environment; uses Sentaurus TCAD for device-level simulation to analyze the impact of irradiation on device performance; and conducts circuit-level simulation through SPICE model to predict the performance changes of integrated circuits in the radiation environment.
[0010] Another object of the present invention is to provide a method for establishing a damage hybrid model of bipolar devices and circuits based on multiple software under low-dose-rate γ irradiation. The method includes the following steps: S1: Conduct irradiation tests, select and screen qualified test samples and comparison samples, and perform electrical parameter tests on them; S2: Determine the radiation source, dose rate, total dose, test temperature, device bias and load of the irradiation experiment, and record the electrical parameters measured each time; S3: Use Geant4 software to simulate the transport process of γ particles in bipolar devices, analyze the interaction of particles, transport trajectories and the formation of defects; S4: Establish a physical structure model of the device under test through Sentaurus TCAD software and optimize and calibrate its electrical parameters; S5: Combine the Geant4 simulation results with the TCAD device model to obtain a damage model of bipolar devices under γ irradiation.
[0011] The present invention is further configured as: The method further includes the following steps: S6: Compare the electrical parameter results of the TCAD model and the actual test, and optimize and improve the device irradiation damage model; S7: Use the SPICE model established in Sentaurus TCAD software to perform circuit simulation, and connect the damage model to predict the performance degradation of integrated circuits; S8: Through comparative analysis of experimental data, further identify the sensitive nodes and damage mechanisms of integrated circuits under γ irradiation, and improve the hybrid model.
[0012] The present invention is further configured as: The irradiation test ensures that there are no less than three test samples of each type, and at least one comparison sample is selected without irradiation treatment.
[0013] The present invention is further configured as: The joint simulation of the damage model simulates the performance degradation from the circuit level to the system level by establishing a SPICE model, and provides an irradiation damage assessment from the device level to the system level.
[0014] The present invention is further configured as: The damage model identifies the damage mechanism by comparing experimental data with the parameters of the hybrid model, so as to optimize the design and application of bipolar devices and circuits.
[0015] By adopting the above technical solutions, the present invention innovatively combines two software, Geant4 and TCAD, to establish a comprehensive low-dose-rate γ irradiation damage model for bipolar devices and integrated circuits. This model realizes a comprehensive analysis from the material level to the entire integrated circuit system, providing a new perspective from the underlying particle interaction mechanism to the macroscopic system circuit performance. Geant4 is used to simulate the interaction between γ particles and device materials to evaluate the damage of devices under irradiation; device-level simulations are carried out through Sentaurus TCAD to analyze the influence of irradiation on device performance; and a SPICE model is established using Sentaurus TCAD for circuit-level simulations to predict the performance changes of integrated circuits in a radiation environment. This cross-level analysis ability enables the present invention to more accurately predict and evaluate the damage of semiconductor devices under low-dose-rate γ irradiation.
[0016] In addition, the present invention uses irradiation test data to optimize and calibrate the radiation damage model to ensure the accuracy of the model. By comparing the electrical parameter results of the TCAD model and actual tests, and comparing the test data of the integrated circuit under irradiation with the parameters of the hybrid model established by the SPICE model and Sentaurus TCAD under irradiation, the present invention can further analyze the sensitive nodes and damage mechanisms of the integrated circuit under low-dose-rate γ irradiation, thereby improving the model. This optimization and calibration process not only improves the prediction accuracy of the model, but also provides a scientific basis for the radiation hardening and reliability design of semiconductor devices and integrated circuits.
[0017] The present invention can significantly save test time, manpower, and funds. Through joint simulations, the dependence on actual radiation experiments is reduced, and the experimental costs and time are lowered. This comprehensive analysis method provides a solid scientific basis for the radiation hardening and reliability design of semiconductor devices and integrated circuits, and is of great significance for promoting the development of related technologies. Generally speaking, the technical solution of the present invention not only improves the accuracy of damage simulation, but also optimizes the experimental efficiency and cost, deeply understands the damage mechanism, and provides a scientific basis for radiation hardening and reliability design, thus promoting the applied research and technological progress of semiconductor devices in a radiation environment.
[0018] In summary, the present invention has the following beneficial effects: 1. The present invention establishes a low-dose-rate γ irradiation damage model for bipolar devices and integrated circuits based on two software, Geant4 and Sentaurus TCAD. Compared with the traditional irradiation damage simulations of individual software and devices, it completes the transition from materials to devices and then to integrated circuits, realizes a comprehensive analysis from the underlying particle interaction mechanism to the macroscopic system circuit performance, and provides a more accurate method for predicting the irradiation damage of semiconductor devices and the performance of integrated circuits.
[0019] 2. The present invention uses Geant4 to simulate the interaction between particles and device materials, and evaluates the damage of devices under irradiation environments; uses Sentaurus TCAD for device-level simulations to analyze the impact of irradiation on device performance; establishes a SPICE model through Sentaurus TCAD for circuit-level simulations to predict the performance changes of integrated circuits in radiation environments. Moreover, the radiation damage models of semiconductor devices and integrated circuits are respectively optimized and calibrated using irradiation test data to ensure the accuracy of model establishment. The present invention can save a large amount of test time, manpower, and funds, and through joint simulations, achieve a comprehensive analysis from microscopic particle transport to macroscopic circuit performance, providing a scientific basis for the radiation hardening and reliability design of semiconductor devices and integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 is the architecture diagram of the γ-irradiation damage simulation and evaluation system for bipolar devices based on multi-software collaboration in an embodiment of the present invention; Figure 2 is the flowchart of the method for establishing a damage hybrid model of bipolar devices and circuits under low-dose-rate γ-irradiation based on multi-software in an embodiment of the present invention; Figure 3 is a simple schematic diagram of the connection between the TCAD model and the SPICE model in an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0021] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0022] Embodiment 1: The γ-irradiation damage simulation and evaluation system for bipolar devices based on multi-software collaboration, as Figure 1 shown, includes the following modules: Irradiation test module: Select specific types of bipolar devices and corresponding integrated circuits, which will be used to simulate the γ-irradiation conditions that may be encountered in the space environment. Randomly select a batch of devices from the production line, ensure that they have the same batch number and electrical parameters meeting the test requirements, conduct preliminary tests on these devices, and record their initial electrical parameters, such as breakdown voltage, current gain, etc.
[0023] Experimental parameter determination module: Set the radiation source as cobalt-60, the dose rate as 0.5 Gy / min, the total dose as 10 kGy, the test temperature as room temperature (25°C), set the bias conditions of the device, such as bias voltage and load resistance, to simulate the actual working conditions, conduct electrical parameter tests on the device before and after irradiation, and record the changes in key parameters such as breakdown voltage, current gain, and leakage current.
[0024] Geant4 simulation module: Use Geant4 software to simulate the transport process of γ particles in bipolar devices, including the interaction of γ particles with different gradient energies with the device material. The gradient energies selected in this embodiment are 0.5 MeV, 1 MeV, and 2 MeV, and analyze the transport trajectory, energy deposition, and the type and density of defects generated by γ particles in the device.
[0025] Sentaurus TCAD modeling module: Establish a three-dimensional physical structure model of the device through Sentaurus TCAD software, including semiconductor materials, doping concentrations, and geometric structures. Optimize and calibrate the process parameters in the TCAD model according to the electrical parameters and curves in the device product manual to ensure the accuracy of the model.
[0026] Damage model integration module: Take the simulation results in Geant4 as input and add them to the device model established by Sentaurus TCAD software to obtain the damage model of bipolar devices under γ irradiation, and analyze the influence of irradiation on the electrical performance of the device, such as the changes in carrier lifetime and mobility.
[0027] Parameter optimization module: Compare the electrical parameters under the TCAD irradiation damage model with the changes in the electrical parameters of the device under actual test conditions. By adjusting the model parameters, make the results of numerical simulation and irradiation test tend to be consistent, and optimize the accuracy of the model.
[0028] Circuit simulation module: Create a new project in Sentaurus TCAD software, establish a SPICE model for the circuit to be studied, and use it to add the device damage model under irradiation established by Sentaurus TCAD to the SPICE model. Complete the establishment of the irradiation damage model and performance degradation prediction of integrated circuits from the device level to the system level under irradiation conditions through co-simulation, such as gain reduction and noise increase.
[0029] Model improvement: Compare the experimental data under integrated circuit irradiation with the parameters of the hybrid model under irradiation established by the SPICE model and Sentaurus TCAD, further analyze the sensitive nodes and damage mechanism of integrated circuits under low-dose-rate γ irradiation, and improve the model to more accurately predict the performance degradation of integrated circuits in the actual radiation environment.
[0030] The system of the present invention can comprehensively simulate and evaluate the damage of bipolar devices under low-dose-rate γ irradiation. From particle transport to circuit performance degradation, it provides a complete analysis and prediction tool. This method not only improves the accuracy of simulation but also provides strong support for the radiation-resistant design and reliability evaluation of semiconductor devices. Through this method of multi-software collaboration, the performance changes of devices in the actual radiation environment can be predicted and evaluated more effectively, providing an important scientific basis for the design and application of semiconductor devices.
[0031] Embodiment 2: A method for establishing a hybrid model of the damage of bipolar devices and circuits under low-dose-rate γ irradiation based on multiple software, as Figure 2 shown, includes the following steps: S1: Conduct irradiation experiments Sample preparation: Select specific models of bipolar devices and corresponding integrated circuits, which will be used to simulate the γ irradiation conditions that may be encountered in the space environment. Randomly select a batch of devices from the production line, ensure that they have the same batch number and electrical parameters meeting the test requirements, conduct preliminary tests on these devices, and record their initial electrical parameters, such as breakdown voltage, current gain, etc. Ensure that there are at least 3 test samples for each type of test, and select at least one identical device as an unirradiated comparison sample.
[0032] S2: Determine irradiation experiment parameters Parameter setting: Set the irradiation source as cobalt-60, the dose rate as 0.5 Gy / min, the total dose as 10 kGy, the test temperature as room temperature (25°C), set the bias conditions of the device, such as bias voltage and load resistance, to simulate the actual working conditions. During the experiment, regularly measure and record the electrical parameters of the device to monitor the impact of irradiation on the device performance.
[0033] S3: Use Geant4 software to simulate γ particle transport Particle transport simulation: Use Geant4 software to simulate the transport process of γ particles in bipolar devices, including the interactions of γ particles with different energies (such as 0.5 MeV, 1 MeV, 2 MeV) with the device materials, analyze the transport trajectories, energy depositions of γ particles in the device, and the types and densities of generated defects.
[0034] S4: Establish a physical structure model through Sentaurus TCAD software Physical structure modeling: Establish a three-dimensional physical structure model of the device through TCAD software, including semiconductor materials, doping concentrations, geometric structures, etc. Optimize and calibrate the process parameters in the TCAD model according to the electrical parameters and curves in the device product manual to ensure the accuracy of the model.
[0035] S5: Establish a damage model by integrating Geant4 and Sentaurus TCAD Model integration: Use the simulation results in Geant4 as input and incorporate them into the device model established in Sentaurus TCAD software to obtain a bipolar device damage model under γ irradiation, and analyze the impact of irradiation on the electrical properties of the device, such as changes in carrier lifetime and mobility.
[0036] S6: Compare the TCAD model with actual test results Model optimization: Compare the electrical parameters under the TCAD irradiation damage model with the changes in the electrical parameters of the device under actual test conditions. By adjusting the model parameters, make the results of numerical simulation and irradiation test tend to be consistent, and optimize the accuracy of the model.
[0037] S7: Use the SPICE model established in Sentaurus TCAD software for circuit simulation Circuit-level simulation: Create a new project in Sentaurus TCAD software, establish a SPICE model for the circuit to be studied, add the irradiated device (TCAD model) that has been established to the SPICE model, and conduct circuit-level simulation to predict the performance changes of the integrated circuit in a radiation environment, such as gain degradation and noise increase.
[0038] S8: Analyze the damage mechanism through comparison and analysis of experimental data Sensitive node analysis: Compare the experimental data of the integrated circuit under irradiation with the parameters of the hybrid model established by SPICE model and TCAD under irradiation, further analyze the sensitive nodes and damage mechanism of the integrated circuit under low-dose-rate γ irradiation, and improve the model to more accurately predict the performance degradation of the integrated circuit in the actual radiation environment.
[0039] This specific embodiment is only an explanation of the present invention and does not limit the present invention. After reading this specification, those skilled in the art can make modifications to this embodiment without creative contributions as needed, but as long as it is within the scope of the claims of the present invention, it is protected by the patent law.
Claims
1. A simulation and evaluation system for gamma irradiation damage of bipolar devices based on multi-software collaboration, characterized by: The system includes the following modules: An irradiation test module, which is used to determine the device model to be detected and the corresponding integrated circuit type, and randomly select devices and integrated circuits of the same batch number, with electrical parameters meeting the test plan and passing the screening as radiation effect test samples; An experimental parameter determination module, which is used to determine experimental parameters and take point measurements of the electrical parameters of the device during the experiment and record the data; A Geant4 simulation module, which is used to simulate the transport process of γ particles in bipolar devices; A Sentaurus TCAD modeling module, which is used to establish a meshed device physical structure and optimize and calibrate the process parameters of the device with the electrical parameters and curves in the device product manual; A damage model integration module, which is used to take the simulation results in Geant4 as input, add them to the device model established by TCAD software, and obtain a damage model of bipolar devices under γ irradiation; A parameter optimization module, which is used to compare the electrical parameter changes of the device under the TCAD irradiation damage model with those under the actual test conditions, and make the results of numerical simulation and irradiation test tend to be consistent by continuously optimizing the model; A circuit simulation module, which creates a new project in TCAD software, establishes a SPICE model for the circuit to be studied, and is used to add the device damage model under irradiation established by TCAD to the SPICE model, and complete the establishment of the irradiation damage model and performance degradation prediction of the integrated circuit from the device level to the system level through co-simulation; 2. The system according to claim 1, characterized in that: The system further includes a model verification module, which is used to compare the test data under integrated circuit irradiation with the parameters of the hybrid model under irradiation established by the SPICE model and TCAD, further analyze the sensitive nodes and damage mechanism of the integrated circuit under low-dose-rate γ irradiation, and improve the model; 3. The system according to claim 1, characterized in that: The experimental parameters in the experimental parameter determination module include irradiation source, dose rate, total dose, test temperature, device bias and load; 4. The simulation and evaluation system for γ-ray irradiation damage of bipolar devices based on multi-software collaboration according to claim 1 or 2, characterized in that: The system uses Geant4 to simulate the interaction between particles and device materials to evaluate the damage of the device under the irradiation environment; uses Sentaurus TCAD for device-level simulation to analyze the impact of irradiation on device performance; and conducts circuit-level simulation through the SPICE model to predict the performance change of the integrated circuit in the radiation environment; 5. A method for establishing a damage hybrid model of bipolar devices and circuits based on multiple software under low-dose-rate γ irradiation, characterized in that, The method includes the following steps: S1: Conduct an irradiation test, select and screen qualified test samples and comparison samples, and test their electrical parameters; S2: Determine the irradiation source, dose rate, total dose, test temperature, device bias and load of the irradiation experiment, and record the electrical parameters measured each time; S3: Use Geant4 software to simulate the transport process of γ particles in bipolar devices, and analyze the interaction of particles, transport trajectories and the formation of defects; S4: Establish a physical structure model of the device under test through Sentaurus TCAD software and optimize and calibrate its electrical parameters; S5: Combine the Geant4 simulation results with the TCAD device model to obtain a damage model of bipolar devices under γ irradiation; 6. The method according to claim 5, characterized in that: The method further includes the following steps: S6: Compare the electrical parameter results of the TCAD model and the actual tests, and optimize and improve the device irradiation damage model; S7: Use the SPICE model established in Sentaurus TCAD software for circuit simulation, and connect the damage model to predict the performance degradation of integrated circuits; S8: Through comparative analysis of experimental data, further identify the sensitive nodes and damage mechanisms of integrated circuits under γ irradiation, and improve the hybrid model.
7. The method according to claim 5, characterized in that: The irradiation test ensures that there are no less than three test samples for each type of test, and at least one comparison sample is selected without irradiation treatment.
8. The method according to claim 5 or 6, characterized in that: The damage model joint simulation simulates the performance degradation from the circuit level to the system level by establishing a SPICE model, and provides irradiation damage assessment from the device level to the system level.
9. The method according to claim 5 or 6, characterized in that: The damage model identifies the damage mechanism by comparing experimental data with the parameters of the hybrid model to optimize the design and application of bipolar devices and circuits.