A high-frequency transceiver chip based on on-chip antenna-pulse source integration

Abstract

This invention discloses a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration, belonging to the field of antenna technology. The on-chip integrated antenna structure is divided into four parts: a radiating structure, a transmission structure, an excitation structure, and a sampling structure. The radiating structure provides efficient signal transmission and reception; the transmission structure ensures signal transmission quality and impedance matching; the excitation structure generates the necessary excitation signal; and the sampling unit collects and processes the transmitted signal. This high-frequency transceiver chip based on on-chip antenna-pulse source co-integration utilizes an on-chip integrated antenna structure constructed with photoconductive materials and a coplanar waveguide structure to realize the transmission and reception of radio signals. It overcomes the limitations of traditional metal antenna structures and features small size, low power consumption, high integration, and strong environmental adaptability. It also has the advantages of lower transmission loss, high integration, and high reliability.

Description

Technical Field

[0001] This invention relates to the field of antenna technology, specifically to a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration. Background Technology

[0002] Antennas, as classic passive devices, can convert between guided high-frequency alternating current and electromagnetic waves radiated in space. They have been widely used in various fields. With the advent of the big data era, people's demand for high-speed data transmission is increasing, and the frequency bands of wireless communication are also gradually increasing. Currently, there are mature passive antenna design schemes in the industry that support the design of passive antennas in the millimeter-wave band. However, contradictoryly, due to the leakage effect caused by miniaturization, the operating frequency of the electrical pulse source is limited to below 110 GHz. Without the support of high-frequency pulse sources, high-frequency passive antennas are like castles in the air, thus limiting the development of high-frequency wireless communication. Therefore, new high-frequency electromagnetic wave transmitting devices have been extensively studied, such as photoconductive antennas, spin terahertz devices, and photodiode antennas. Compared with traditional passive antennas, these new devices do not require external current source excitation, thus breaking through the frequency limitation of current pulse sources. These devices generate alternating current autonomously by utilizing the photoelectric conversion characteristics of the substrate material under laser excitation, thereby forming electromagnetic wave radiation.

[0003] Furthermore, recent research indicates that these devices can generate electromagnetic wave radiation at terahertz frequencies. However, these devices currently face several challenges: 1. Difficulty in increasing power output; 2. Limited modulation methods; 3. Inability to function as receiving antennas; and so on. Therefore, the specific form of the next-generation millimeter-wave transceiver system still needs further exploration. This paper proposes a device design integrating a high-frequency pulse source and a millimeter-wave antenna. By integrating a photoelectric pulse source capable of generating electrical pulses above 110 GHz with a passive antenna on the same chip, high-frequency electromagnetic wave radiation and reception are achieved, which is expected to be applied to wireless communication and radar ranging systems.

[0004] Currently, radiating antenna devices are divided into two categories: active devices and passive devices. Their respective advantages and disadvantages are as follows:

[0005] Passive devices: Advantages: Mature design schemes and a variety of modulation methods; Disadvantages: Limited by the 110GHz frequency bottleneck of electrical pulses.

[0006] Active devices: Advantages: Frequency can break through the limitations of electrical pulse sources; Disadvantages: Limited radiated power, few modulation methods, and cannot be used as receiving modules.

[0007] A comparison of the two types of devices reveals that by utilizing the response of specific materials to laser irradiation, high-frequency alternating currents can be generated. The frequency of these currents can break through the limitations of traditional electrical pulse sources, which is precisely what passive antenna devices urgently need. However, the transmission of electrical signals between heterogeneous devices will generate huge losses, especially for high-frequency signals. The large amount of loss makes the devices unable to meet the power requirements of actual use. Therefore, on-chip integration has become a better solution. However, such optoelectronic materials are often semiconductors or conductors, which often have large dielectric losses or leakage effects. Therefore, special design is required for the material properties during device design. By combining the simulation design software HFSS with integrated circuit process technology, we have completed the integrated integration of the pulse source and the passive antenna on the same photoconductive substrate, realizing the radiation and reception functions of high-frequency electromagnetic waves. Summary of the Invention

[0008] This invention provides a high-frequency transceiver chip based on on-chip antenna-pulse source integration. This invention employs a pulse source device based on a photoconductive switch, achieving integrated device integration of the antenna and pulse source device on the same photoconductive substrate, aiming to overcome the limitations of existing antenna structures. This application integrates the excitation structure, transmission structure, sampling structure, and radiation structure into one unit, utilizing the high sensitivity and low loss characteristics of photoconductive materials to achieve efficient and highly integrated wireless communication and electrical signal conversion. It has advantages such as small size, low power consumption, high integration, and strong environmental adaptability, thus solving the problems in the background art.

[0009] To achieve the above objectives, the present invention provides the following technical solution: a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration, wherein the co-integration design of the excitation source and the on-chip antenna includes:

[0010] Excitation structure: The excitation structure adopts a photoconductive switch design. It is fabricated on a photoconductive substrate through metal electrodes to generate high-speed electrical pulses, which are responsible for generating radio frequency signals for rapid signal switching and transmission.

[0011] Radiation structure: It adopts a passive antenna design to complete the mutual conversion between electrical signals and space electromagnetic waves;

[0012] Transmission structure: a coplanar waveguide that connects the excitation structure and the radiation structure to transmit signals in a low-loss manner. Impedance matching is ensured through a matching network design.

[0013] Sampling structure: It adopts a photoconductive switch design to collect signals transmitted in the transmission structure, receive radio signals and convert them into electrical signals.

[0014] Furthermore, the device morphology of the excitation structure is a bandgap metal electrode fabricated on a photoconductive substrate, with one end serving as a DC bias application port as a conductive structure and the other end serving as an AC pulse output port.

[0015] The output port can be any one of the following depending on the device: microstrip line port, coplanar waveguide port, and coaxial line port.

[0016] Furthermore, the device morphology of the radiating structure is a radiating antenna device fabricated on a substrate, with one end being the radiating end, which is a radio frequency antenna, and the other end being the feeding structure;

[0017] The feeding structure can be any one of a microstrip line port, a coplanar waveguide port, or a coaxial line port.

[0018] Furthermore, the transmission structure is divided into three parts: an input end, a transmission end, and an output end.

[0019] The input terminal is connected to the output port of the excitation structure, and the output terminal is connected to the input terminal of the radiation structure.

[0020] To achieve impedance matching between the radiating structure and the excitation structure, as well as interconnection of different interfaces, the transmission end of the transmission structure needs to be designed as a corresponding matching transmission network according to the design requirements to achieve low-loss signal propagation.

[0021] Furthermore, the sampling structure is a bandgap metal electrode fabricated on a photoconductive substrate, which has two interfaces: a signal input terminal and a signal output terminal. The signal input terminal is a signal transmission line of the transmission structure used to collect the signal transmitted in the transmission structure.

[0022] The signal output terminal can be any one of a microstrip line port, a coplanar waveguide port, or a coaxial line port.

[0023] Furthermore, it also includes back-end processing circuitry: responsible for processing the acquired radio frequency signals, performing amplification, filtering, and modulation operations.

[0024] Compared with the prior art, the present invention provides a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration, which has the following advantages:

[0025] This high-frequency transceiver chip, based on the co-integration of on-chip antenna and pulse source, utilizes an on-chip integrated antenna structure constructed with photoconductive materials and coplanar waveguide structures to achieve the transmission and reception of radio signals. It overcomes the limitations of traditional metal antenna structures and features small size, low power consumption, high integration, and strong environmental adaptability. It also has the advantages of lower transmission loss, high integration, and high reliability. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to the present invention;

[0028] In the diagram: 1. Radiation structure; 2. Sampling structure; 3. Transmission structure; 4. Excitation structure. Detailed Implementation

[0029] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0031] Secondly, the term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places throughout this specification does not necessarily refer to the same embodiment, nor is it a single embodiment or an embodiment selectively excluded from other embodiments.

[0032] Please see Figure 1 As shown, this invention discloses a high-frequency transceiver chip based on the co-integration of an on-chip antenna and a pulse source. The co-integration design of the excitation source and the on-chip antenna includes:

[0033] Excitation structure 4: It adopts a photoconductive switch design. The excitation structure 4 is fabricated on a photoconductive substrate through metal electrodes to generate high-speed electrical pulses, which are responsible for generating radio frequency signals for rapid signal switching and transmission.

[0034] Radiation structure 1: It adopts a passive antenna design to complete the mutual conversion between electrical signals and space electromagnetic waves;

[0035] Transmission structure 3: Coplanar waveguide, which connects excitation structure 4 and radiation structure 1 to transmit signals in a low-loss manner. Impedance matching is ensured through matching network design.

[0036] Sampling structure 2: It adopts a photoconductive switch design to collect the signals transmitted in transmission structure 3, receive radio signals and convert them into electrical signals.

[0037] Specifically, the device morphology of the excitation structure 4 is a bandgap metal electrode fabricated on a photoconductive substrate, with one end being a DC bias application port as a conductive structure and the other end being an AC pulse output port; the output port can be any one of a microstrip line port, a coplanar waveguide port, or a coaxial line port depending on the device; the radiation structure 1 is a gap electrode on a photoconductive substrate, which, when a DC bias voltage is provided from the lower end, excites a picosecond pulse upward when the photoconductive substrate material between the electrodes is irradiated by a laser.

[0038] Specifically, the device morphology of the radiation structure 1 is a radiation antenna device fabricated on a substrate, with one end being the radiation end, which is a radio frequency antenna, and the other end being a feeding structure; the feeding structure can be any one of a microstrip line port, a coplanar waveguide port, and a coaxial line port.

[0039] Radiation structure 1 uses various passive antennas designed with electromagnetic simulation software to complete the mutual conversion between on-chip current and spatial electromagnetic waves.

[0040] Specifically, the transmission structure 3 is divided into three parts: an input end, a transmission end, and an output end. The input end is connected to the output port of the excitation structure 4, and the output end is connected to the input end of the radiation structure 1. In order to achieve impedance matching between the radiation structure 1 and the excitation structure 4, as well as interconnection of different interfaces, the transmission end of the transmission structure 3 needs to be designed as a corresponding matching transmission network according to the design requirements to achieve low-loss signal propagation.

[0041] Due to the high dielectric loss of the photoconductive substrate, an undesigned transmission circuit will cause huge transmission loss to the system. Therefore, the GSG coplanar waveguide in this section is a low-loss transmission line obtained by electromagnetic simulation software. At the same time, different transmission structures 3 need to be designed for different input requirements of the four radiating antennas.

[0042] The purpose of this application is to design a high-efficiency, low-loss, and highly integrated radio frequency excitation and sampling system. Therefore, this application proposes a novel integration scheme that realizes the planarization and patterning of four structures through integrated circuit fabrication technology: the excitation structure 4 is responsible for generating radio frequency signals and transmitting them to the radiation structure 1 through the transmission structure 3 to realize the transmission of radio frequency signals. At the same time, the sampling structure 2 receives the radio frequency signals from the transmission structure 3 and collects and aggregates the signals. This on-chip or heterogeneous integration design can effectively reduce transmission loss, improve integration, and achieve impedance matching between different structures through the design of a reasonable transmission structure 3, thereby achieving the purpose of efficient excitation and sampling.

[0043] Technical effects:

[0044] High integration: Integrating all structures on the same substrate reduces assembly complexity.

[0045] High efficiency: Ensures low-loss signal transmission and improves system efficiency.

[0046] High reliability: Reduces multiple assembly steps and improves stability.

[0047] Integration is achieved through a single patterning process: this reduces assembly steps while ensuring consistency and reliability of electronic properties.

[0048] Matching network design: By optimizing the design of transmission structure 3, efficient signal transmission and low-loss propagation are achieved.

[0049] By controlling the precise processes in both on-chip and heterogeneous integration, significant signal loss is ensured during transmission, thereby guaranteeing the high efficiency and stability of the integrated system. The combined design and manufacturing processes of each part of this patent achieve the aforementioned technical solution, resulting in high integration, high efficiency, and high reliability.

[0050] Specifically, the sampling structure 2 has a device morphology of a bandgap metal electrode fabricated on a photoconductive substrate, and has two interfaces: a signal input terminal and a signal output terminal. The signal input terminal is a signal transmission line of the transmission structure 3 used to collect the signal transmitted in the transmission structure 3. The signal output terminal can be transformed into any one of a microstrip line port, a coplanar waveguide port, and a coaxial line port according to the device design requirements.

[0051] Sampling structure 2 is characterized by a gap electrode on a photoconductive substrate. The left side is the signal acquisition outlet, and the right side is the signal input port. The signal at the right end is obtained by the antenna of excitation structure 4, which collects spatial electromagnetic waves and converts them into electrical signals. When there is an electrical signal at the right end, the laser irradiates the photoconductive substrate in the gap, and the signal is transmitted to the left end, thus completing the signal acquisition.

[0052] Specifically, it also includes back-end processing circuitry: responsible for processing the acquired radio frequency signals, performing amplification, filtering, and modulation operations.

[0053] Specifically, the laser input to the excitation and acquisition structure can be replaced by free space light or by on-chip silicon optical waveguide input.

[0054] Specifically, the optical acquisition module in the acquisition structure can be replaced with a purely electrical acquisition scheme using radio frequency circuitry.

[0055] Specifically, for the low-frequency band, transmission structure 3 can replace the coplanar waveguide with a microstrip line.

[0056] The key technical points of this application are:

[0057] Integrated structure design: Integrating the RF excitation and sampling structure 2 onto a single chip is the core technical feature of this application, and it determines the overall performance of the system.

[0058] Design of Addressing Transmission Structure 3: Overcoming the impedance matching problem between different structures by designing a reasonable transmission structure 3 and ensuring low-loss signal transmission is the key technical point of this application.

[0059] Selection of heterogeneous integration solutions: Selecting a suitable heterogeneous integration solution based on the specific application scenario, such as coplanar heterogeneous integration or heterogeneous integration, can further improve the system's integration and performance.

[0060] Applications of advanced photoconductive materials: Using photoconductive materials with good optoelectronic properties can improve the transmission efficiency and sensitivity of the system.

[0061] Usage: This application uses the equipped control circuit to drive the excitation structure 4 to generate radio frequency signals, and at the same time receives external signals as input to the sampling structure 2 to complete the radio frequency signal excitation and sampling functions.

[0062] Working principle: Excitation structure 4 converts DC signal into stable radio frequency signal, transmission structure 3 transmits signal through multiple ports such as microstrip line and coplanar waveguide, radiation structure 1 radiates radio frequency signal into the air, and sampling structure 2 receives radio frequency signal and sends it to back-end processing circuit to complete the excitation and sampling functions of radio frequency signal.

[0063] Working process: The control circuit sends the DC power signal to the excitation structure 4, and the excitation structure 4 generates a radio frequency signal with a specific frequency and amplitude; the output signal of the excitation structure 4 is transmitted to the radiation structure 1 through the transmission structure 3, and the radiation structure 1 transmits the radio frequency signal to an open area; at the same time, the external radio frequency signal is transmitted to the sampling structure 2 through the transmission structure 3, and the sampling structure 2 collects the radio frequency signal and sends it to the back-end processing circuit.

[0064] The back-end processing circuit processes the acquired radio frequency signals, such as amplification, filtering, and modulation, as described in the example.

[0065] refer to Figure 1As shown, this application discloses a high-frequency transceiver chip based on on-chip antenna-pulse source co-integration. It designs and fabricates photoconductive switches and radiating antennas on the same optoelectronic substrate. A DC bias is applied to the lower port of the excitation structure 4, pre-biasing the photoconductor serving as the excitation structure 4. A femtosecond laser excites the photoconductive substrate in the excitation structure 4, exciting the photoconductive device to generate a high-frequency pulse, which is transmitted through the transmission structure 3 to the passive antenna of the radiating structure 1, radiating electromagnetic waves outwards. When external electromagnetic waves are transmitted to the passive antenna of the radiating structure 1, due to the reciprocity of the antenna, the electromagnetic waves in space are converted into on-chip current. When the current passes through the right port of the sampling structure 2, this current provides a voltage bias for the right port of the sampling structure 2. At this time, when the photoconductive device of the sampling structure 2 is excited by a femtosecond laser, the port of the sampling structure 2 is turned on, and the current is collected by the port of the sampling structure 2.

[0066] In summary, this high-frequency transceiver chip based on on-chip antenna-pulse source co-integration utilizes an on-chip integrated antenna structure constructed with photoconductive materials and coplanar waveguide structures to achieve radio signal transmission and reception. It overcomes the limitations of traditional metal antenna structures and features small size, low power consumption, high integration, and strong environmental adaptability. It also has the advantages of lower transmission loss, high integration, and high reliability.

[0067] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A high-frequency transceiver chip based on on-chip antenna-pulse source co-integration, characterized in that, This includes: excitation structures, radiation structures, transmission structures, and sampling structures integrated on the same photoconductive substrate; The excitation structure is a photoconductive switch, which is fabricated on the photoconductive substrate through a bandgap metal electrode to generate high-speed electrical pulses, responsible for generating radio frequency signals for rapid signal switching and transmission. The radiating structure is a passive antenna used to convert electrical signals into and out of spatial electromagnetic waves. The transmission structure is a coplanar waveguide that connects the excitation structure and the radiation structure. Impedance matching is achieved through a matching network design to ensure low-loss signal transmission. The sampling structure is a photoconductive switch, which is fabricated on the photoconductive substrate by a bandgap metal electrode, and is used to collect signals in the transmission structure and convert them into electrical signals. The excitation structure, radiation structure, transmission structure, and sampling structure are patterned on the same photoconductive substrate in one step using integrated circuit technology, thereby realizing the integrated function of high-frequency signal transmission and reception.

2. The high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to claim 1, characterized in that: The device morphology of the excitation structure is a bandgap metal electrode fabricated on a photoconductive substrate, with one end being a DC bias application port as a conductive structure and the other end being an AC pulse output port. The output port can be any one of the following depending on the device: microstrip line port, coplanar waveguide port, and coaxial line port.

3. The high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to claim 1, characterized in that: The device morphology of the radiating structure is a radiating antenna device fabricated on a substrate, with one end being the radiating end, which is a radio frequency antenna, and the other end being the feeding structure; The feeding structure can be any one of a microstrip line port, a coplanar waveguide port, or a coaxial line port.

4. The high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to claim 1, characterized in that: The transmission structure is divided into three parts: input end, transmission end, and output end. The input terminal is connected to the output port of the excitation structure, and the output terminal is connected to the input terminal of the radiation structure. To achieve impedance matching between the radiating structure and the excitation structure, as well as interconnection of different interfaces, the transmission end of the transmission structure needs to be designed as a corresponding matching transmission network according to the design requirements to achieve low-loss signal propagation.

5. A high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to claim 1, characterized in that: The sampling structure is a bandgap metal electrode fabricated on a photoconductive substrate. It has two interfaces: a signal input terminal and a signal output terminal. The signal input terminal is a signal transmission line of the transmission structure used to collect the signal transmitted in the transmission structure. The signal output terminal can be any one of a microstrip line port, a coplanar waveguide port, or a coaxial line port.

6. A high-frequency transceiver chip based on on-chip antenna-pulse source co-integration according to claim 1, characterized in that: It also includes back-end processing circuitry: responsible for processing the acquired radio frequency signals, performing amplification, filtering, and modulation operations.

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