Preparation method of high-performance self-powered broadband photoelectrochemical photoelectric detector based on Bi2Te0. 6Se2. 4 / MoSe2 composite material

Abstract

The invention belongs to the technical field of photoelectric detectors, and relates to a high-performance self-powered broadband photoelectric detector based on a Bi2Te0. 6Se2. 4 / MoSe2 composite material and a preparation method of the high-performance self-powered broadband photoelectric detector. According to the invention, the ternary Bi2Te0. 6Se2. 4 is combined with MoSe2 for the first time, and the self-powered broadband photoelectric detector with excellent performance is prepared. On the basis of regulating and controlling the mass ratio of the composite material, the optimal mass ratio of the Bi2Te0. 6Se2. 4 / MoSe2 heterojunction is successfully obtained, and the photoelectric property of the Bi2Te0. 6Se2. 4 / MoSe2 heterojunction is optimal. The photoelectric detector generates stable photocurrent through a photoelectrochemical reaction under the bias voltage of 0V, and shows excellent self-powered characteristics. And light with specific wavelength is used for irradiation, so that high-sensitivity detection from ultraviolet to visible light wave bands is realized, the response time is short, and the stability is good. The self-powered broadband photoelectric detector has important significance in the field of self-powered broadband photoelectric detectors, and shows wide prospects and development potential in applications such as optical communication, environment monitoring and broadband detection.

Description

Technical Field

[0001] The present invention belongs to the technical field of photodetectors, and specifically relates to a high-performance self-powered broadband photodetector based on a Bi2Te 0.6 Se 2.4 / MoSe2 composite material. Background Technique

[0002] A photodetector is an optoelectronic device that can convert optical signals into electrical signals. It occupies a core position in modern information society and is widely used in fields such as optical communication, environmental monitoring, imaging technology, military defense, and security monitoring. However, traditional photodetectors are limited by problems such as spectral range, high driving voltage dependence, complex device structure, and high cost, and it is difficult to meet the requirements of increasingly complex, diverse, and low-power systems.

[0003] To overcome this limitation, photoelectrochemical photodetectors have gradually become a research hotspot due to their unique working mechanism and excellent performance. Compared with traditional detectors, photoelectrochemical photodetectors have advantages such as fast response speed, high sensitivity, strong tunability, low cost, and simple process. However, current photoelectrochemical photodetectors still face some challenges. First, existing devices usually need to rely on external power supplies for photoelectric conversion and signal processing, which affects the stability and reliability of the devices under extreme working conditions. Second, although it performs signal conversion based on photochemical reactions, due to the limited light absorption ability and electron transport performance of the material itself, its detection efficiency and sensitivity are difficult to meet high-demand application scenarios. Therefore, to solve these problems, it is necessary to reduce the dependence on external power supplies and explore self-powered photoelectrochemical photodetectors. At the same time, developing new materials with stronger light absorption ability and better electron transport performance and exploring methods to optimize material properties so as to effectively improve the efficiency and sensitivity of the detector and meet higher-precision application requirements are also a major challenge. Summary of the Invention

[0004] To solve the above technical problems, the present invention proposes a preparation method of a high-performance self-powered broadband photoelectrochemical photodetector based on a Bi2Te 0.6 Se 2.4 / MoSe2 composite material. For the first time, the ternary topological insulator material Bi2Te with excellent optoelectronic properties 0.6 Se 2.4 is ingeniously combined with MoSe2 to form a heterojunction structure, which helps to efficiently separate and transport photo-generated carriers, not only enhancing the photoelectrochemical performance of the detector but also broadening its spectral response range.

[0005] The object of the present invention is to provide a preparation method of a high-performance self-powered broadband photoelectrochemical photodetector. This photoelectrochemical photodetector has the ability of self-power supply without an external circuit, and has the advantages of high sensitivity, simple preparation process, strong light response ability, wide spectral range, etc.

[0006] In order to achieve the above object of the invention, the following technical solutions are adopted in the present invention:

[0007] A preparation method of a high-performance self-powered broadband photodetector based on a Bi2Te 0.6 Se 2.4 / MoSe2 composite material, comprising the following steps:

[0008] (1) Synthesis of Bi2Te 0.6 Se 2.4 material:

[0009] Dissolve anhydrous bismuth chloride and a certain proportion of selenium powder and tellurium powder in a diethylenetriamine solvent, then vigorously stir the mixture with a magnetic stirrer at room temperature, and finally transfer the homogeneous solution to a PTFE inner liner and seal it in a high-pressure reaction kettle for reaction for a period of time. After naturally cooling to room temperature, collect the solution, and then perform a centrifugation operation to obtain a precipitate. Add anhydrous ethanol and deionized water to the precipitate and wash it multiple times to remove unreacted impurities. Finally, dry to obtain the Bi2Te 0.6 Se 2.4 material.

[0010] (2) Synthesis of MoSe2 material:

[0011] Dissolve sodium molybdate in deionized water to prepare solution A. Add Se powder to deionized water according to the molar ratio, then add an appropriate amount of citric acid to the solution to improve the solubility of selenium powder, and then stir at room temperature to prepare solution B. Then mix solution A and solution B and perform ultrasonic treatment to further improve the dispersion. Finally, transfer the homogeneous solution to a sealed high-pressure kettle and react at a certain temperature for a period of time. Subsequently, perform centrifugation, washing, and drying treatments in the same way to obtain the MoSe2 material.

[0012] (3) Synthesis of Bi2Te 0.6 Se 2.4 / MoSe2 composite material:

[0013] Take the Bi2Te 0.6 Se 2.4 material prepared in step (1) and the MoSe2 material prepared in step (2), mix them in a certain proportion in deionized water, transfer the homogeneous solution obtained by ultrasonic treatment to a sealed high-pressure kettle, and react at a certain temperature for a period of time. After cooling to room temperature, centrifuge, wash, and dry the solution, and finally anneal the obtained powder at a certain temperature for a certain time to obtain Bi2Te0.6 Se 2.4 Bi₂Te₃Se₂ / MoSe₂ composite material.

[0014] (4) Preparation of the photodetector:

[0015] In the first step, clean the ITO conductive glass with acetone, ethanol, and deionized water respectively, and then cover the ITO with copper tape, leaving a conductive area of about 1 cm. 2 of the conductive area.

[0016] In the second step, take the Bi₂Te₃Se₂ / MoSe₂ powder material prepared in step (3) and put it into deionized water, and ultrasonically disperse it to make it uniform. Further, take a certain amount of the uniformly dispersed liquid and drop it on the effective area of the ITO conductive glass, and store it after drying for use as the working electrode. 0.6 Se 2.4 / MoSe₂ powder material into deionized water, ultrasonically treat it to make it uniformly dispersed. Further, take a quantitative amount of the uniformly dispersed liquid and drop it on the effective area of the ITO conductive glass, and dry it and store it for use as the working electrode.

[0017] In the third step, remove the previously covered copper tape from the Bi₂Te₃Se₂ / MoSe₂ electrode, and finally obtain a high-performance self-powered broadband photoelectrochemical photodetector based on the Bi₂Te₃Se₂ / MoSe₂ composite material. 0.6 Se 2.4 / MoSe₂ electrode, and finally obtain a high-performance self-powered broadband photoelectrochemical photodetector based on Bi₂Te₃Se₂ / MoSe₂ composite material. 0.6 Se 2.4 / MoSe₂ composite material.

[0018] (5) A performance test method for a high-performance self-powered broadband photoelectrochemical photodetector:

[0019] A high-performance self-powered broadband photoelectrochemical photodetector based on Bi₂Te₃Se₂ / MoSe₂ composite material 0.6 Se 2.4 / MoSe₂ composite material is measured on a CHI 660E electrochemical workstation using a three-electrode system. The photoelectrochemical photodetector is constructed in an electrolytic cell. A 0.1 M PBS solution is selected as the electrolyte, and the Bi₂Te₃Se₂ / MoSe₂ electrode is used as the working electrode, and the saturated Ag / AgCl and platinum wire electrodes are used as the reference electrode and the counter electrode respectively. To provide illumination for the photoelectrochemical measurement, a solar-500w external xenon lamp and several specific wavelength lights are used as light sources, and the light intensity is calibrated by a light power meter. 0.6 Se 2.4 / MoSe₂ electrode as the working electrode, saturated Ag / AgCl and platinum wire electrodes are used as the reference electrode and the counter electrode respectively. To provide illumination for the photoelectrochemical measurement, a solar-500w external xenon lamp and several specific wavelength lights are used as light sources, and the light intensity is calibrated by a light power meter.

[0020] Preferably, in step (1), the number of moles of bismuth chloride anhydride is 1 mmol; the volume of the diethylenetriamine solvent is 30 ml; the stirring time at room temperature is 60 minutes; the solution reacts at 180°C - 200°C for 24 hours; the centrifugation speed is 8000 - 10000 revolutions per minute and the time is 10 - 15 minutes. Preferably, in step (2), the number of moles of sodium molybdate is 1 mmol; the ultrasonic treatment time for mixing solution A and solution B is 30 minutes; the solution reacts at 200°C for 18 hours.

[0021] Preferably, in step (3), the ultrasonic time for the mixed solution is 30 minutes; the mixed solution reacts at 180°C for 18 hours; the obtained composite material is annealed at 300°C for 1 hour under an argon atmosphere.

[0022] Preferably, in step (5), the wavelength range of the xenon lamp is from 200 nm to 1200 nm; specific wavelengths are 254 nm, 365 nm, 546 nm, and 650 nm.

[0023] The beneficial effects of the present invention are as follows:

[0024] (1) Synthesize Bi2Te 0.6 Se 2.4 / MoSe2 composite materials by a hydrothermal method that is low-cost and environmentally friendly, and prepare a high-performance self-powered broadband photoelectrochemical photodetector based on the Bi2Te 0.6 Se 2.4 / MoSe2 composite materials. The built-in electric field formed at the interface of the Bi2Te 0.6 Se 2.4 / MoSe2 composite materials effectively promotes the rapid separation and migration of photo-generated carriers, reduces the interface recombination rate, and thus improves the photoelectric response performance.

[0025] (2) This detector exhibits excellent self-powered ability and can generate and maintain a stable photocurrent response by relying on photoelectrochemical (redox reaction) reactions without an external power source.

[0026] (3) The photocurrent density of the Bi2Te 0.6 Se 2.4 / MoSe2 composite materials is significantly enhanced compared with single materials.

[0027] (4) This device also shows a wide spectral response ability, exhibits excellent photoelectric conversion efficiency in the ultraviolet to visible light range, and demonstrates remarkable sensitivity and stability. Brief Description of the Drawings

[0028] Figure 1 For the Bi2Te of the present invention 0.6 Se 2.4I-T curve of the Bi2Te

[0029] Figure 2 / MoSe2 composite material at different mass ratios under a 0 V bias voltage. 0.6 Se 2.4 Response speed of the Bi2Te

[0030] Figure 3 / MoSe2 photoelectrochemical photodetector at 0 V bias voltage. 0.6 Se 2.4 Dark and light EIS comparison diagrams of the Bi2Te

[0031] Figure 4 / MoSe2 photoelectrochemical photodetector measured at 0 V bias voltage, and the inset is the fitting diagram of its equivalent circuit. 0.6 Se 2.4 IT curve of the photocurrent density of the Bi2Te

[0032] Figure 5 / MoSe2 photoelectrochemical photodetector varying with the optical power intensity at 0 V bias voltage. 0.6 Se 2.4 Fitting linear relationship curve between the optical power intensity and the photocurrent density of the Bi2Te

[0033] Figure 6 / MoSe2 photoelectrochemical photodetector at 0 V bias voltage. 0.6 Se 2.4 IT curve of the Bi2Te

[0034] Figure 7 / MoSe2 photoelectrochemical photodetector irradiated with light of different wavelengths at 0 V bias voltage. 0.6 Se 2.4 Photocurrent density and responsivity of the Bi2Te Detailed implementation mode

[0035] The following describes the present invention in detail with reference to the drawings and embodiments, making the purpose, technical solution and advantages of the present invention clearer. The specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0036] In the following embodiments, the experimental raw materials, reagents and equipment used can be obtained through general commercial channels. The experimental methods adopt conventional photoelectrochemical experimental methods unless otherwise specified.

[0037] Example 1:

[0038] This embodiment provides a method for preparing a photoelectrochemical photodetector, comprising the following steps:

[0039] (1) Prepare Bi2Te 0.6 Se 2.4 material: Dissolve 1 mmol of anhydrous bismuth chloride and a certain proportion of selenium powder and tellurium powder in 30 ml of diethylenetriamine solvent. Then vigorously stir the mixture with a magnetic stirrer at room temperature for 60 minutes. Finally, transfer the homogeneous solution to a 50-ml PTFE liner, seal it in a high-pressure reaction kettle, and heat it at 200 °C for 24 hours. After natural cooling to room temperature, collect the solution, and then perform a centrifugation operation at a rotational speed of 8000 revolutions per minute for 15 minutes to obtain a precipitate. Add anhydrous ethanol and deionized water to the precipitate and wash it multiple times to remove unreacted impurities. Finally, dry it overnight at 60 °C to obtain the material.

[0040] (2) Prepare MoSe2 material: Dissolve 1 mmol of sodium molybdate in 10 ml of deionized water to prepare solution A. Add Se powder to 10 ml of deionized water according to the molar ratio, then add an appropriate amount of citric acid to the solution to improve the solubility of the selenium powder, and then stir this solution at room temperature for 30 minutes to prepare solution B. Then mix solution A and solution B and perform ultrasonic treatment for 15 minutes to further improve the dispersion. Finally, transfer and seal the homogeneous solution to a high-pressure kettle and heat it at 200 °C for 18 hours. Subsequently, perform the same centrifugation, washing, and drying treatments to obtain the MoSe2 material.

[0041] (3) Prepare Bi2Te 0.6 Se 2.4 / MoSe2 composite material: Mix the two materials obtained above in a certain proportion in 20 ml of deionized water, perform ultrasonic treatment for 30 minutes to obtain a homogeneous solution, then transfer and seal it to a high-pressure kettle, and heat it at 180 °C for 18 hours. After cooling to room temperature, centrifuge, wash, and dry the solution. Finally, anneal the obtained powder at 300 °C for 1 hour, and the annealing treatment is carried out in an argon atmosphere.

[0042] (4) Clean the ITO conductive glass: Ultrasonically clean the ITO conductive glass with acetone, ethanol, and deionized water for 15 minutes in sequence, and then use copper tape to cover the ITO conductive glass, leaving a conductive area of about 1 cm 2 uncovered.

[0043] (5) Prepare 0.1 M PBS electrolyte solution: Dissolve 0.1 M potassium hydrogen phosphate and 0.1 M potassium dihydrogen phosphate in 50 ml of deionized water respectively. Take 30 ml of the potassium hydrogen phosphate solution and mix it with 20 ml of the potassium dihydrogen phosphate solution to obtain 50 ml of 0.1 M PBS solution.

[0044] (6) Prepare Bi2Te 0.6Se 2.4 / MoSe2 electrode: Take a certain amount of Bi2Te 0.6 Se 2.4 / MoSe2 powder material and put it into deionized water. Ultrasonically treat it to make it evenly dispersed. Further, take a quantitative and evenly dispersed liquid and drop it on the effective area of ITO conductive glass, and store it after drying for use as a working electrode. That is, the high-performance self-powered broadband photoelectrochemical photodetector based on the Bi2Te 0.6 Se 2.4 / MoSe2 composite material prepared by the present invention.

[0045] (7) Photoelectric response performance test: Use a three-electrode system for photoelectrochemical testing. Take the electrode attached with Bi2Te 0.6 Se 2.4 / MoSe2 composite as the working electrode, Ag / AgCl and Pt as the reference electrode and the counter electrode respectively, and use 1MPBS as the electrolyte. Use a solar-500w external xenon lamp and light sources of four wavelengths (254nm, 365nm, 546nm, 650nm) as the light excitation source, and collect various photoelectric properties in the overall system through an electrochemical acquisition workstation of model CHI660E.

[0046] The following is the explanation of the drawings in Example 1 of the present invention:

[0047] Figure 1 It is the I-T curve diagram of the synthesized Bi2Te 0.6 Se 2.4 / MoSe2 composite material at different mass ratios. Generally speaking, when the ratio of Bi2Te 0.6 Se 2.4 :MoSe2 = 1:1 shows a higher photocurrent density, more stable response and faster photoelectric response time. These results indicate that at this ratio, the heterojunction interface is more conducive to the separation and transmission of photo-generated carriers, and the balance of carrier separation and transmission reaches the best state, thus effectively improving the light response ability and achieving higher photoelectric conversion performance.

[0048] Figure 2 It is the response rate diagram of the Bi2Te 0.6 Se 2.4 / MoSe2 photoelectrochemical photodetector: The response rise time is the time required for the photoelectric response intensity to rise from 10% to 90% of the maximum intensity; the response fall time is the time required for the photocurrent intensity to recover from 90% to 10%. It can be seen from the figure that the rise time is 0.15s and the fall time is 0.14s. These results indicate that this photodetector has excellent response speed and is suitable for high-frequency optical signal detection.

[0049] Figure 3 For the Bi2Te 0.6 Se 2.4 / MoSe2 photoelectrochemical photodetector, the comparison diagram of dark and illuminated EIS measured at 0 V bias voltage, and the inset is the fitting diagram of its equivalent circuit. Among them, the frequency range is set to 10 - 10 6 Hz, Rs is the resistance of the electrolyte itself, Cdl represents the double-layer capacitance formed by the charge distribution at the interface between the electrode and the electrolyte, Zw is the Warburg impedance of the system, and Rct is the charge transfer resistance of the working electrode. Rct represents the resistance of charge transfer from the electrode surface to the electrolyte or from the electrolyte to the electrode surface during the electrode reaction process, which can be understood as half of the diameter of the semicircle in the figure, that is, the radius of the nearly perfect circle. It can be seen that the radius of the semicircle in the illuminated condition diagram becomes smaller. Through fitting, it is obtained that under dark conditions, Rct is 57.71 Ω, and under illuminated conditions, Rct is 51.73 Ω. The results in the figure are the same as the fitting results, indicating that the charge transfer resistance has decreased. The decrease in the radius reflects that the photo-generated carriers excited by light effectively reduce the resistance of the interfacial reaction, thereby improving the kinetic performance of the electrochemical reaction, enhancing the transfer efficiency of interfacial charge, and strengthening the photoelectric response ability.

[0050] Figure 4 For the Bi2Te 0.6 Se 2.4 / MoSe2 photoelectrochemical photodetector, the IT curve of the current varying with the light power intensity at 0 V bias voltage. Through calculation, when the light power density increases from 64 mW / cm 2 to 116 mW / cm 2 , the photocurrent density increases from 9.5 μA / cm 2 to 14.3 μA / cm 2 , which indicates that within a certain range, a higher light power intensity can excite more photo-generated carriers, thereby increasing the photocurrent density.

[0051] Figure 5 For the Bi2Te 0.6 Se 2.4 / MoSe2 photoelectrochemical photodetector, the linear fitting relationship curve between the light power intensity and the photocurrent density at 0 V bias voltage. R 2 = 0.988, and there is a good linear relationship between the two, indicating that within a certain range, the photocurrent density maintains a linear response, and the detector can effectively convert the optical signal into an electrical signal without obvious signal saturation phenomenon.

[0052] Figure 6 For the Bi2Te 0.6 Se 2.4IT curves of the Bi2Te2 photoelectrochemical photodetector under different wavelengths of light. It can be observed that the photocurrent density caused by 650nm wavelength light is the highest, indicating that this wavelength has a great 0.6 Se 2.4 The excitation effect of the MoSe2 composite material is the strongest. Overall, it shows a stable and consistent photocurrent response under different wavelengths of light, indicating that the detector can effectively excite free electrons and generate current in a wide wavelength range (from ultraviolet to visible light), has excellent photoelectric conversion performance, and is suitable for photoelectric applications under a variety of light source conditions.

[0053] Figure 7 Bi2Te 0.6 Se 2.4 The photocurrent density and responsivity of the MoSe2 photoelectrochemical photodetector at different wavelengths under 0V bias. As can be seen from the figure, when the wavelength increases from 254nm to 650nm, the photocurrent density increases from 1.02μA / cm 2 Increased to 6.12μA / cm 2 , the same responsivity increases from 137.74μA / W to 274.62μA / W. This shows that due to Bi2Te 0.6 Se 2.4 The / MoSe2 composite material has a smaller band gap, which enables it to absorb light more effectively in the long wavelength range, especially in the red light region, showing higher photoelectric response ability and photoelectric conversion efficiency.

[0054] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A high-performance self-powered broadband photodetector based on Bi2Te 0.6 Se 2.4 / MoSe2 composite material, characterized in that: including Bi2Te 0.6 Se 2.4 The working electrode consists of a Bi2Te 0.6 Se 2.4 / MoSe2 composite material, an Ag / AgCl reference electrode, a platinum wire counter electrode, and a PBS electrolyte solution.

2. As claimed in claim 1, based on Bi2Te 0.6 Se 2.4 / MoSe2 composite self-powered broadband photodetector, characterized in that The electrolyte used is PBS with a concentration of 0.1M.

3. As described in claims 1-2, a method for preparing a self-powered broadband photodetector based on a Bi2Te 0.6 Se 2.4 / MoSe2 composite material, characterized in that It includes the following steps: S1: Bi2Te 0.6 Se 2.4 / MoSe2 composite material is prepared through the following steps: (1) Dissolve 315 mg of anhydrous bismuth chloride, 38 mg of selenium powder and 95 mg of tellurium powder in 30 ml of diethylenetriamine solvent. Then vigorously stir the mixture using a magnetic stirrer at room temperature for 60 minutes. Finally, transfer the homogeneous solution to a 50 ml PTFE liner and seal it in a high-pressure reactor, and heat it at 200 °C for 24 hours. After natural cooling to room temperature, collect the solution, and then perform centrifugation at a rotational speed of 8000 revolutions per minute for 15 minutes to obtain a precipitate. Add anhydrous ethanol and deionized water to the precipitate and wash it multiple times to remove unreacted impurities. Finally, dry it overnight at 60 °C to obtain Bi2Te 0.6 Se 2.4 . (2) Dissolve 242 mg of sodium molybdate in 10 ml of deionized water to prepare solution A; add 158 mg of Se powder to 10 ml of deionized water according to the molar ratio, then add 420 mg of citric acid to the solution to improve the solubility of selenium powder, and then stir this solution with a magnetic stirrer at room temperature for 30 minutes to prepare solution B. Then mix solution A and solution B, and perform ultrasonic treatment for 15 minutes to further improve the dispersion. Finally, transfer the homogeneous solution to a sealed autoclave and heat it at 200 °C for 18 hours. Subsequently, perform centrifugation (8000 revolutions per minute, 10 minutes), washing and drying treatments to obtain the MoSe2 material. (3) Mix the two materials obtained above in a ratio of 1:1 in 20 ml of deionized water, transfer and seal the homogeneous solution to an autoclave after ultrasonic treatment for 30 minutes, and heat it at 180 °C for 18 hours. After cooling to room temperature, centrifuge (8000 revolutions per minute, 10 minutes), wash and dry the solution. Finally, anneal the obtained powder at 300 °C for 1 hour, and the annealing treatment is carried out in an argon atmosphere. S2: Place the ITO conductive glass in acetone, ethanol, and deionized water in sequence, and ultrasonically treat it at a frequency of 40 kHz for 15 minutes for cleaning. Then use copper tape to cover the ITO, leaving approximately 1 cm 2 of the conductive area as the test area. S3: Weigh 10 mg of the Bi2Te 0.6 Se 2.4 / MoSe2 composite material, add it to 1 ml of deionized water, and ultrasonically treat it to make it disperse evenly. Then, take 60 μl of the obtained solution and drop it onto the reserved 1 cm 2 area of the treated ITO conductive glass. After drying, it is stored for use as a working electrode. S4: Using Bi2Te 0.6 Se 2.4 / MoSe2 composite as the working electrode, a high-performance self-powered broadband photodetector based on Bi2Te 0.6 Se 2.4 / MoSe2 composite is fabricated.

4. As described in claim 2, based on Bi2Te 0.6 Se 2.4 / MoSe2 composite material for the preparation of 0.1M PBS electrolyte used in high-performance self-powered broadband photodetectors: Dissolve 0.1M dipotassium hydrogen phosphate and 0.1M potassium dihydrogen phosphate separately in 50 ml of deionized water. Take 30 ml of the dipotassium hydrogen phosphate solution and mix it with 20 ml of the potassium dihydrogen phosphate to obtain 50 ml of 0.1M PBS.

5. As described in claim 3, a high-performance self-powered broadband photodetector based on Bi2Te 0.6 Se 2.4 / MoSe2 composite material, characterized in that, in step S1, the washing steps are as follows: First, wash with absolute ethanol to disperse the material in absolute ethanol, then centrifuge again and wash with deionized water to disperse, and repeat 2 to 3 times.

6. The high-performance self-powered broadband photodetector based on the Bi2Te 0.6 Se 2.4 / MoSe2 composite material, where S4 specifically is: placing the working electrode uniformly containing the Bi2Te 0.6 Se 2.4 / MoSe2 composite material in the electrolyte solution, and using the three-electrode system of the working electrode, counter electrode, and reference electrode to prepare the high-performance self-powered broadband photodetector based on the Bi2Te 0.6 Se 2.4 / MoSe2 composite material.

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