FTTR slave device

Abstract

The invention discloses FTTR slave equipment, which comprises a first socket, a power receiving equipment detection unit, a power grading unit and a load unit, and is characterized in that the first socket is used for accessing power supply equipment; the power receiving equipment detection unit is connected with the first socket and is used for identifying whether the FTTR slave equipment meets the standard POF power receiving or not under the condition that the power supply equipment supplies power to the standard POF; the power grading unit is connected with the power receiving equipment detection unit, the power grading unit is used for identifying the power grade of the FTTR slave equipment and controlling connection and disconnection between the first socket and the load unit according to the voltage input by the first socket under the condition that the power supply equipment supplies power to the standard POF, and the power grading unit is used for identifying the power grade of the FTTR slave equipment and controlling connection and disconnection between the first socket and the load unit according to the voltage input by the second socket under the condition that the power supply equipment supplies power to the non-standard POF. The power grading unit is used for controlling connection and disconnection between the first socket and the load unit according to the voltage input by the first socket; and the load unit is connected with the power grading unit.

Description

Technical Field

[0001] This application belongs to the technical field of Power Over Fiber (POF), and particularly relates to an FTTR slave device. Background Art

[0002] Fiber to The Room (FTTR) is a home networking method that uses optical fiber media. An FTTR master device is deployed in a distribution box or a key position. With the FTTR master device as the core, an optical network of FTTR is formed through optical splitters and optical fibers. In FTTR networking, the POF technology is mainly used to power the FTTR slave device from the FTTR master device or an active optical splitter, so as to reduce the complexity of power supply for FTTR installation and networking.

[0003] In the related art, for general standard POF power supply, the FTTR master device or the active optical splitter generally supports power supply according to the IEEE802.3af or IEEE 802.3at standard. The power reception of the FTTR slave device is realized by using a dedicated integrated power device (PD) chip that supports IEEE 802.3af or IEEE802.3at. However, since the dedicated integrated PD chip does not support non-standard POF power reception, when the FTTR slave device uses the dedicated integrated PD chip, for a power supply device (FTTR master device or active optical splitter) with non-standard POF power supply, the FTTR slave device cannot obtain power normally. Summary of the Invention

[0004] This application aims to provide an FTTR slave device, which can solve the problem that in the related art, for a power supply device with non-standard POF power supply, the FTTR slave device cannot obtain power normally.

[0005] An embodiment of this application discloses an FTTR slave device, including: a first socket, a power receiving device detection unit, a power grading unit, and a load unit, wherein: the first socket is used to connect to a power supply device; the power receiving device detection unit is connected to the first socket and is used to identify whether the FTTR slave device meets the standard POF power reception when the power supply device is a standard POF power supply; the power grading unit is connected to the power receiving device detection unit. When the power supply device is a standard POF power supply, the power grading unit is used to identify the power level of the FTTR slave device and control the on-off between the first socket and the load unit according to the voltage input by the first socket. When the power supply device is a non-standard POF power supply, the power grading unit is used to control the on-off between the first socket and the load unit according to the voltage input by the first socket; the load unit is connected to the power grading unit.

[0006] An embodiment of the present application provides an FTTR slave device, including a first socket, a power receiving device detection unit, a power grading unit, and a load unit. The first socket is used to connect to a power supply device. The power receiving device detection unit is connected to the first socket and is used to identify whether the FTTR slave device meets the standard POF power reception when the power supply device is a standard POF power supply. The power grading unit is connected to the power receiving device detection unit. When the power supply device is a standard POF power supply, the power grading unit is used to identify the power level of the FTTR slave device and control the on / off between the first socket and the load unit according to the voltage input by the first socket. When the power supply device is a non-standard POF power supply, the power grading unit is used to control the on / off between the first socket and the load unit according to the voltage input by the first socket. The load unit is connected to the power grading unit. Since the FTTR slave device provided by the present application supports both standard POF power reception and non-standard POF power reception, it can solve the problem that in the related art, for a power supply device with non-standard POF power supply, the FTTR slave device cannot obtain power normally.

[0007] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The above and / or additional aspects and advantages of the present invention will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, in which: Figure 1 It is a schematic structural diagram of the first FTTR slave device disclosed in the embodiment of the present application; Figure 2 It is a schematic structural diagram of the second FTTR slave device disclosed in the embodiment of the present application; Figure 3 It is a schematic structural diagram of the third FTTR slave device disclosed in the embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0009] Embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for explaining the present invention and should not be construed as limiting the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts fall within the scope of protection of the present application.

[0010] The terms "first" and "second" in the description and claims of this application may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more. In addition, "and / or" in the description and claims means at least one of the connected objects, and the character " / ", generally represents an "or" relationship between the associated objects before and after.

[0011] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense. For example, they can be directly connected, or indirectly connected through an intermediate medium, and can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0012] As Figure 1 shown, an embodiment of this application discloses an FTTR slave device, which includes: a first socket 110, a power receiving device detection unit 120, a power grading unit 130, and a load unit 140, where: the first socket 110 is used to access a power supply device; the power receiving device detection unit 120 is connected to the first socket 110 and is used to identify whether the FTTR slave device meets the standard POF power receiving when the power supply device is a standard POF power supply; the power grading unit 130 is connected to the power receiving device detection unit 120. Wherein, when the power supply device is a standard POF power supply, the power grading unit 130 is used to identify the power level of the FTTR slave device and control the on / off between the first socket 110 and the load unit 140 according to the voltage input by the first socket 110. When the power supply device is a non-standard POF power supply, the power grading unit 130 is used to control the on / off between the first socket 110 and the load unit 140 according to the voltage input by the first socket 110; the load unit 140 is connected to the power grading unit 130.

[0013] In this application, the power supply device may include an FTTR master device or an active optical splitter PSE. The first socket 110 can be an SC / UPC type socket that supports POF hybrid optical and electrical cables. This socket supports both side and bottom contact point power receiving types and supports all standard SC / UPC type hybrid optical and electrical cables. The power supply device accesses the first socket 110 through a hybrid optical and electrical cable, and the first socket 110 accesses the POF voltage and current from the hybrid optical and electrical cable into the power receiving circuit of the FTTR slave device for the subsequent circuit functional units. The load unit 140 is the overall power taking module inside the subsequent FTTR slave device.

[0014] For standard POF power supply, the FTTR master device or the active optical splitter supports IEEE 802.3af or IEEE 802.3at standard POF power supply and is connected to the first socket 110 of the FTTR slave device through an optical and electrical hybrid cable. The power supply device first performs a PD detection process. The power supply device applies a detection voltage of 2.5 - 10V, which is lower than the voltage required for the power grading unit 130 to control the conduction between the first socket 110 and the load unit 140. The power grading unit 130 is not conducting. The power supply device identifies whether the FTTR slave device meets the standard POF power reception through the power receiving device detection unit 120. When it is determined that the FTTR slave device meets the standard POF power reception and is a standard PD insertion, the detection process ends and the power grading process begins. In the case of the power grading process, the power supply device applies a detection voltage of 15.5 - 20.5V, which is lower than the voltage required for the power grading unit 130 to control the conduction between the first socket 110 and the load unit 140. The power grading unit 130 is not conducting. The power supply device determines the power level of the FTTR slave device based on the detected current value and the IEEE 802.3af or IEEE 802.3at standard. After the power grading process ends, the power supply device starts to output the normal POF voltage for normal power reception. During normal power reception, the output voltage range of the power supply device is 44V - 57V, which is higher than the voltage required for the power grading unit 130 to control the conduction between the first socket 110 and the load unit 140. The power grading unit 130 conducts, and the subsequent stage receives power normally.

[0015] For non-standard POF power supply, there is no protocol authentication for the FTTR master device or the active optical splitter. It directly supplies power to the FTTR slave device without the PD detection process and the power grading process. It is connected to the first socket 110 of the FTTR slave device through an optical and electrical hybrid cable and starts power reception directly. The output voltage range of the power supply device is 36V - 57V, which is higher than the voltage required for the power grading unit 130 to control the conduction between the first socket 110 and the load unit 140. The power grading unit 130 conducts, and the subsequent stage receives power normally.

[0016] It should be noted that the working mode of POF is similar to that of POE. POE receives power through an Ethernet cable, while POF uses an optical and electrical hybrid cable different from the Ethernet cable to receive power. The POF optical and electrical hybrid cable is designed to transmit power and data.

[0017] An embodiment of the present application provides an FTTR slave device, including a first socket 110, a power receiving device detection unit 120, a power grading unit 130, and a load unit 140. The first socket 110 is used to connect to a power supply device. The power receiving device detection unit 120 is connected to the first socket 110. The power receiving device detection unit 120 is used to identify whether the FTTR slave device meets the standard POF power reception when the power supply device supplies power in the standard POF mode. The power grading unit 130 is connected to the power receiving device detection unit 120. When the power supply device supplies power in the standard POF mode, the power grading unit 130 is used to identify the power level of the FTTR slave device and control the on / off between the first socket 110 and the load unit 140 according to the voltage input by the first socket 110. When the power supply device supplies power in a non-standard POF mode, the power grading unit 130 is used to control the on / off between the first socket 110 and the load unit 140 according to the voltage input by the first socket 110. The load unit 140 is connected to the power grading unit 130. Since the FTTR slave device provided by the present application supports both standard POF power reception and non-standard POF power reception, it can solve the problem that in the related art, for a power supply device with non-standard POF power supply, the FTTR slave device cannot obtain power normally.

[0018] In addition, compared with the solutions in the prior art where the dedicated PD chip pins of different manufacturers are different, there are problems such as non-universality, out-of-stock, or high risk of replacement due to production suspension. Since this solution is implemented by individual discrete units and does not require a dedicated PD chip, it is easy to select and replace, is more universal, has a small out-of-stock risk, and has a low cost.

[0019] In one implementation, as Figure 2 shown, the power receiving device detection unit 120 may include a first resistor R1 and a capacitor C1, where: the first end of the first resistor R1 is connected to the positive pole POF_48V_P of the first socket 110, and the second end of the first resistor R1 is connected to the negative pole POF_48V_N of the first socket 110; the first end of the capacitor C1 is respectively connected to the first end of the first resistor R1 and the power grading unit 130, and the second end of the capacitor C1 is respectively connected to the second end of the first resistor R1 and the power grading unit 130.

[0020] Based on the combination setting of the first resistor R1 and the capacitor C1, the PD detection function compliant with the IEEE 802.3af or IEEE 802.3at standard is realized, which is used for the power supply device to detect the presence of the PD device. Exemplarily, the value of the first resistor R1 can be 24.9 KΩ, and the value of the capacitor C1 can be 0.1 uF. The PD detection state compliant with the IEEE 802.3af or IEEE 802.3at standard requirements should satisfy that the input impedance is between 23.75 and 26.25 KΩ, and the input capacitance is between 0.02 and 0.12 uF.

[0021] It should be noted that the power receiving device detection unit 120 in this application can also be composed of other structures in the prior art that can achieve the corresponding functions, and this application does not make specific limitations on this.

[0022] In one implementation, as Figure 2 shown, the power grading unit 130 includes a first zener diode D3, a second resistor R2, a second zener diode D4, and a switch Q1. Among them: the anode of the first zener diode D3 is connected to the power receiving device detection unit 120, and the cathode of the first zener diode D3 is connected to the first end of the second resistor R2; the first end of the second resistor R2 is connected to the control end of the switch Q1, and the second end of the second resistor R2 is respectively connected to the anode of the first zener diode D3 and the first end of the switch Q1; the second end of the switch Q1 is connected to the load unit 140; the anode of the second zener diode D4 is connected to the control end of the switch Q1, and the cathode of the second zener diode D4 is respectively connected to the power receiving device detection unit 120 and the load unit 140.

[0023] Exemplarily, the switch Q1 can be a MOS transistor, the value of the second resistor R2 can be 10 K, the first zener diode D3 has a regulated voltage of 12 V, the second zener diode D4 has a regulated voltage of 30 V, and the MOS transistor Q1 is an NMOS. When the voltage is greater than 30 V, the second zener diode D4 conducts; when the voltage is lower than 30 V, the second zener diode D4 does not conduct. When the voltage is lower than 30 V, the second resistor R2 pulls the gate of the MOS transistor to the negative pole to ensure that the MOS transistor Q1 is turned off. The first zener diode D3 is used to protect the gate of the MOS transistor Q1 from overvoltage damage.

[0024] For standard POF power reception, during the power grading process, the power supply device applies a detection voltage of 15.5 - 20.5V. Since this detection voltage is lower than the conduction voltage of 30V of the first zener diode D3, the first zener diode D3 cannot conduct, the MOS transistor does not conduct, and the circuit absorption current is close to 0mA. Therefore, the power supply device will detect a current close to 0mA, that is, determine the power level of the FTTR slave device as level 0. The power supply device outputs a power less than or equal to 15.4W for normal voltage power reception. When the output voltage of the power supply device is higher than 30V, the MOS transistor conducts, and the output power supply POF_48V+ is used for the subsequent circuit. Set the power level to Class0 level, the circuit function is simplified, the cost is low, and it meets the common power reception of the FTTR slave device from 0 to 15W. For non-standard POF power reception, the FTTR master device or the active optical splitter directly supplies power to the FTTR slave device. After the output voltage of the power supply device is higher than 30V, the MOS transistor is turned on for direct power reception by the subsequent unit. Thus, for both standard POF power reception and non-standard POF power reception, the FTTR slave device can receive power normally.

[0025] In one implementation, as Figure 2 shown, the power grading unit 130 may further include a third resistor R3. The cathode of the second zener diode D4 is respectively connected to the power reception device detection unit 120 and the load unit 140, and may include: the cathode of the second zener diode D4 is connected to the first end of the third resistor R3, and the second end of the third resistor R3 is respectively connected to the power reception device detection unit 120 and the load unit 140.

[0026] Exemplarily, the value of the third resistor R3 can be 1K. The third resistor R3 is connected in series with the second zener diode D4 to realize the switching control of the MOS transistor Q1. The third resistor R3 plays a current limiting role and cooperates with the second resistor R2 to protect the gate of the MOS transistor.

[0027] It should be noted that the power grading unit 130 in this application may also be composed of other structures in the prior art that can achieve corresponding functions, and this application does not make specific limitations on this.

[0028] In one implementation, as Figure 2 and Figure 3 shown, the FTTR slave device may further include a polarity conversion unit 150. The polarity conversion unit 150 is connected between the first socket 110 and the power reception device detection unit 120, and the polarity conversion unit 150 is used to convert the polarity of the voltage input by the first socket 110 into a determined polarity.

[0029] Since the power supply polarities of the optical and electrical hybrid cable for normal insertion and reverse insertion are different, the polarities of the POF power supply POF_48V_P / POF_48V_N inserted into the first socket 110 are uncertain. By setting the polarity conversion unit 150, the power supply POF_48V_P / POF_48V_N with uncertain polarities can be converted into a power supply POF_48V+ / GND with definite polarities, enabling the optical and electrical hybrid cable to work properly for both normal insertion and reverse insertion.

[0030] In one implementation, as Figure 2 shown, the polarity conversion unit 150 may include a rectifier bridge D2. The first AC input terminal AC1 of the rectifier bridge D2 is connected to the positive electrode of the first socket 110, the second AC input terminal AC2 of the rectifier bridge D2 is connected to the negative electrode of the first socket 110, the positive electrode +DC of the DC output of the rectifier bridge D2 is connected to the power receiving device detection unit 120, and the negative electrode -DC of the DC output of the rectifier bridge D2 is connected to the power receiving device detection unit 120. That is to say, in this application, the rectifier bridge D2 converts the polarity of the voltage input by the first socket 110 into a definite polarity.

[0031] Exemplarily, the current-carrying capacity of the rectifier bridge D2 is 1A.

[0032] It should be noted that the polarity conversion unit 150 in this application may also be composed of other structures in the prior art that can achieve the corresponding functions, and this application does not make specific limitations on this.

[0033] In one implementation, the FTTR slave device may further include a voltage conversion unit 160. The voltage conversion unit 160 is connected between the power grading unit 130 and the load unit 140, and the voltage conversion unit 160 is used to convert the voltage input by the first socket 110 into a standard voltage used inside the FTTR slave device.

[0034] Exemplarily, when the standard voltage used inside the FTTR slave device is 12V, the voltage conversion unit 160 can convert the received high-voltage POF_48V+ level (DC 36V - 57V) into 12V, and the voltage conversion unit 160 outputs a power supply signal POF_12V.

[0035] It should be noted that the voltage conversion unit 160 in this application can Figure 2 achieve the corresponding functions by a DC-DC converter similar to U1 as shown, or may also be composed of other structures in the prior art that can achieve the corresponding functions, and this application does not make specific limitations on this.

[0036] In one implementation, as Figure 2 and Figure 3As shown, the FTTR slave device may further include a second socket 170 and a power supply selection unit 180. The second socket 170 is connected to the first input end of the power supply selection unit 180. The output end of the voltage conversion unit 160 is connected to the second input end of the power supply selection unit 180. The output end of the power supply selection unit 180 is connected to the load unit 140. The second socket 170 is used to access an external power adapter. The power supply selection unit 180 is used to select to supply power to the load unit 140 from the second socket 170 or from the output end of the voltage conversion unit 160.

[0037] Exemplarily, the second socket 170 may be a common standard DC socket, which is used to connect the 12V voltage and current of the external power adapter to the circuit interface of the FTTR slave device.

[0038] In this embodiment, the FTTR slave device supports power receiving via POF, and at the same time is compatible with power receiving via a 12V external power adapter, and has a dual-power receiving backup protection function.

[0039] In one implementation, as Figure 2 shown, the power supply selection unit 180 may include a first Schottky diode D5 and a second Schottky diode D6, where: the anode of the first Schottky diode D5 serves as the first input end of the power supply selection unit 180, and the anode of the second Schottky diode D6 serves as the second input end of the power supply selection unit 180; the cathode of the first Schottky diode D5 is connected to the cathode of the second Schottky diode D6 and serves as the output end of the power supply selection unit 180.

[0040] In this embodiment, the first Schottky diode D5 and the second Schottky diode D6 are used to automatically select power receiving via POF and power receiving via the external power adapter, and output 12V to the load unit 140. Specifically, when using the first Schottky diode D5 and the second Schottky diode D6 to automatically select power receiving via POF and power receiving via the external power adapter, the higher-voltage one of the two paths of voltage is used as the power receiving power source for the load unit 140, that is, the power supply selection unit 180 preferentially selects the power source with better DC as the power receiving power source for the load unit 140.

[0041] In addition, after determining the power receiving power source, the capacitor C7 may be used to filter the power first, and then supply it to the overall load unit inside the FTTR slave device.

[0042] It should be noted that the power supply selection unit 180 in this application may also be composed of other structures in the prior art that can achieve the corresponding functions, and this application does not make specific limitations on this.

[0043] In one implementation, asFigure 2 and Figure 3 As shown in Figure 3 , the FTTR slave device may further include a protection unit 190, which is disposed between the first socket 110 and the power receiving device detection unit 120. By providing the protection unit 190, functions of lightning surge, transient overvoltage, and overcurrent protection can be achieved to protect the overall subsequent-stage circuit and prevent the subsequent-stage circuit from being damaged by unbearable voltage or current.

[0044] Exemplarily, as Figure 2 shown, the protection unit 190 of the present application may be composed of an overvoltage protection device (such as a transient voltage suppression diode D1 or a varistor) and a fuse F1. The overvoltage protection device is connected in parallel to POF_48V_P and POF_48V_N, and the protection voltage of the overvoltage protection device is 63V. When the input voltage transiently exceeds 63V, the voltage is clamped to prevent the voltage from exceeding the voltage tolerance range of the subsequent stage, thereby playing a voltage protection role. The fuse F1 is connected in series to POF_48V_P, and the fusing current is 1A. When a short-circuit overcurrent occurs in the subsequent-stage circuit, the fuse F1 fuses to protect the circuit from serious damage or safety accidents.

[0045] It should be noted that the protection unit 190 in the present application may also be composed of other structures in the prior art that can achieve corresponding functions, and the present application does not make specific limitations thereto.

[0046] It should be noted that the above-mentioned various units may be connected by circuit signals.

[0047] In the description of this specification, the descriptions with reference to terms such as "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0048] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirits of the present invention, and the scope of the present invention is defined by the claims and their equivalents.

Claims

1. An FTTR slave device, characterized in that, Comprising: A first socket, a power receiving device detection unit, a power grading unit, and a load unit, wherein: The first socket is used to connect to a power supply device; The power receiving device detection unit is connected to the first socket and is used to identify whether the FTTR slave device complies with standard POF power receiving when the power supply device is a standard POF power supply; The power grading unit is connected to the power receiving device detection unit. Wherein, when the power supply device is a standard POF power supply, the power grading unit is used to identify the power level of the FTTR slave device and control the on / off between the first socket and the load unit according to the voltage input by the first socket. When the power supply device is a non-standard POF power supply, the power grading unit is used to control the on / off between the first socket and the load unit according to the voltage input by the first socket; The load unit is connected to the power grading unit.

2. The FTTR slave device according to claim 1, wherein The power receiving device detection unit includes a first resistor and a capacitor, wherein: The first end of the first resistor is connected to the positive electrode of the first socket, and the second end of the first resistor is connected to the negative electrode of the first socket; The first end of the capacitor is respectively connected to the first end of the first resistor and the power grading unit, and the second end of the capacitor is respectively connected to the second end of the first resistor and the power grading unit.

3. The FTTR slave device according to claim 1, wherein The power grading unit includes a first zener diode, a second resistor, a second zener diode, and a switch, wherein: The anode of the first zener diode is connected to the power receiving device detection unit, and the cathode of the first zener diode is connected to the first end of the second resistor; The first end of the second resistor is connected to the control end of the switch, and the second end of the second resistor is respectively connected to the anode of the first zener diode and the first end of the switch; The second end of the switch is connected to the load unit; The anode of the second zener diode is connected to the control end of the switch, and the cathode of the second zener diode is respectively connected to the power receiving device detection unit and the load unit.

4. The FTTR slave device according to claim 3, wherein, The power grading unit further includes a third resistor. The cathode of the second zener diode is respectively connected to the power receiving device detection unit and the load unit, including: The cathode of the second zener diode is connected to the first end of the third resistor, and the second end of the third resistor is respectively connected to the power receiving device detection unit and the load unit.

5. The FTTR slave device according to claim 1, wherein, It further includes a polarity conversion unit. The polarity conversion unit is connected between the first socket and the power receiving device detection unit, and the polarity conversion unit is used to convert the polarity of the voltage input by the first socket into a determined polarity.

6. The FTTR slave device according to claim 5, characterized in that, The polarity conversion unit includes a rectifier bridge. The first AC input terminal of the rectifier bridge is connected to the positive electrode of the first socket, the second AC input terminal of the rectifier bridge is connected to the negative electrode of the first socket, the positive electrode of the DC output of the rectifier bridge is connected to the power receiving device detection unit, and the negative electrode of the DC output of the rectifier bridge is connected to the power receiving device detection unit.

7. The FTTR slave device according to claim 1, characterized in that, It further includes a voltage conversion unit, which is connected between the power grading unit and the load unit, and is used to convert the voltage input by the first socket into the standard voltage used inside the FTTR slave device.

8. The FTTR slave device according to claim 7, wherein It further includes a second socket and a power supply selection unit. The second socket is connected to the first input end of the power supply selection unit. The output end of the voltage conversion unit is connected to the second input end of the power supply selection unit. The output end of the power supply selection unit is connected to the load unit. The second socket is used to access an external power adapter, and the power supply selection unit is used to select to supply power to the load unit from the second socket or from the output end of the voltage conversion unit.

9. The FTTR slave device according to claim 8, wherein The power supply selection unit includes a first Schottky diode and a second Schottky diode, where: The anode of the first Schottky diode serves as the first input end of the power supply selection unit, and the anode of the second Schottky diode serves as the second input end of the power supply selection unit; The cathode of the first Schottky diode is connected to the cathode of the second Schottky diode and serves as the output end of the power supply selection unit.

10. The FTTR slave device according to claim 1, characterized in that, It further includes a protection unit, which is arranged between the first socket and the power receiving device detection unit.

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