Polymer semiconductor film and preparation method thereof

Abstract

The invention provides a polymer semiconductor film and a preparation method thereof. Specifically, a plurality of gaps are distributed on the polymer semiconductor film; wherein the area of the gap is 0.1 [mu] m < 2 > to 10 mm < 2 >; and the distribution density range of the notches is 0.001 to 100000 / cm < 2 >. In the stretching process, the notches can serve as stress release points, stress applied to the polymer semiconductor film is effectively dispersed, it is ensured that the morphology of an effective area of the polymer semiconductor film is kept stable, and therefore random cracks caused by stress concentration are avoided.

Description

Technical Field

[0001] The present disclosure relates to the field of material technologies, and in particular, to a polymer semiconductor thin film and a preparation method thereof. Background Art

[0002] Due to their light weight, low cost, solution processability, and tunable optoelectronic properties, organic polymer semiconductors have shown great potential in many fields such as organic solar cells, organic field-effect transistors (OFETs), and organic light-emitting diodes (OLEDs).

[0003] With the rapid development of technical fields such as flexible electronic devices and wearable devices, higher requirements are put forward for the performance of polymer materials. For example, in the process of constructing stretchable organic semiconductor materials, the materials need to simultaneously possess good stretchable mechanical properties and electrical properties. Currently, in order to meet the requirements of stretchable organic semiconductor materials, related technologies have problems such as complex molecular structures of materials and cumbersome processes. Summary of the Invention

[0004] In view of this, an object of the present disclosure is to provide a polymer semiconductor thin film and a preparation method thereof.

[0005] Based on the above object, the present disclosure provides a polymer semiconductor thin film, on which a plurality of notches are distributed;

[0006] The area of the notch is 0.1 μm 2 to 10 mm 2 ; the distribution density range of the notches is 0.001 to 100,000 per cm 2 ;

[0007] In some embodiments, the distribution of the plurality of notches in the polymer semiconductor thin film includes at least one of regular distribution and irregular distribution.

[0008] In some embodiments, the regular distribution includes at least one of grid-like distribution, spiral distribution, and concentric circle distribution; and / or

[0009] The irregular distribution includes at least one of random distribution and fractal geometry distribution.

[0010] In some embodiments, the depth of the notch is 50 to 100% of the thickness of the polymer semiconductor thin film.

[0011] In some embodiments, the shape of the notch is selected from at least one of circular, rhombic, triangular, rectangular, and wavy.

[0012] In some embodiments, the polymer semiconductor thin film comprises a plurality of layer structures; wherein, the notch distributions of different layer structures are the same or different.

[0013] In some embodiments, the polymer semiconductor thin film comprises a polymer semiconductor and a photosensitive crosslinking agent; or

[0014] The polymer semiconductor thin film comprises an organic polymer semiconductor type photoresist.

[0015] Based on the same inventive concept, embodiments of the present disclosure further provide a method for preparing a polymer semiconductor thin film, comprising:

[0016] Dissolving a polymer semiconductor and a photosensitive crosslinking agent in solvents respectively to form a polymer solution and a crosslinking agent solution;

[0017] Adding the crosslinking agent solution into the polymer solution in proportion to form a thin film solution;

[0018] Forming a first thin film on a substrate from the thin film solution by a preset film-forming method;

[0019] Covering the first thin film with a photomask, and performing photo-crosslinking under predetermined light illumination conditions to obtain a second thin film; wherein, a notch pattern is distributed on the photomask;

[0020] Soaking the second thin film in the solvent, and rinsing after taking out to obtain the polymer semiconductor thin film; wherein,

[0021] A plurality of notches corresponding to the notch pattern are distributed on the polymer semiconductor thin film.

[0022] In some embodiments, the photomask has different light transmittance in the area of the notch pattern and the area outside the notch pattern.

[0023] In some embodiments, the concentrations of the polymer solution and the crosslinking agent solution are respectively 0.01 - 100 mg / ml; and / or

[0024] In the thin film solution, the mass ratio of the photosensitive crosslinking agent to the polymer semiconductor is 0.01% - 99%.

[0025] In some embodiments, the polymer semiconductor is selected from at least one of conjugated polymers and non-conjugated polymers.

[0026] In some embodiments, the conjugated polymer comprises at least one of pyrrole, benzothiadiazole, imide, and thiophene; and / or

[0027] The photosensitive crosslinking agent includes at least one of an azide group, a cinnamate group, and a bisaziridine group.

[0028] In some embodiments, when the polymer semiconductor has photosensitive properties, the polymer semiconductor and the photosensitive crosslinking agent are the same material.

[0029] In some embodiments, the polymer semiconductor is represented by formula (I); the photosensitive crosslinking agent is represented by formula (II);

[0030]

[0031] The predetermined light irradiation conditions include ultraviolet light irradiation at 300 - 400 nm for 10 - 400 seconds, and the lamp power is 10 - 100 mW / cm 2 .

[0032] In some embodiments, the solvent includes at least one of a halogenated organic solvent and an aromatic solvent; and / or, the solvent for rinsing includes at least one of isopropyl alcohol, tetrahydrofuran, and cyclohexane.

[0033] As can be seen from the above, a polymer semiconductor thin film and a preparation method thereof provided by the present disclosure have a plurality of notches with a preset area at a specific density distribution on the polymer semiconductor thin film. During the stretching process of the material, these notches can serve as stress release points, effectively dispersing the stress applied to the polymer semiconductor thin film, ensuring the stability of the morphology of the effective area of the polymer semiconductor thin film, and thus avoiding the generation of random cracks caused by stress concentration. Such a technical solution avoids complex molecular structure settings, has simple preparation operations, and significantly improves the stretchable mechanical properties of the polymer semiconductor thin film, enhancing its application potential in the fields of stretchable and wearable flexible electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or related technologies. Obviously, the drawings in the following description are only embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0035] Figure 1A A schematic diagram showing a polymer semiconductor thin film provided by an embodiment of the present disclosure;

[0036] Figure 1B A schematic diagram showing the stretched state of a polymer semiconductor thin film provided by an embodiment of the present disclosure;

[0037] Figure 2Schematic diagram showing the design of photomasks with different shapes provided by embodiments of the present disclosure;

[0038] Figure 3 Schematic diagram showing the design of a photomask with a circular pattern provided by embodiments of the present disclosure;

[0039] Figure 4 Microscopic image showing a polymer semiconductor thin film provided by embodiments of the present disclosure;

[0040] Figure 5 Optical microscopic image showing a polymer semiconductor thin film under 50% tensile strain provided by embodiments of the present disclosure;

[0041] Figure 6 Optical microscopic images showing a polymer semiconductor thin film under different tensile strains provided by the related art;

[0042] Figure 7 Atomic force microscopic image showing the surface of a polymer semiconductor thin film outside the notch region before and after stretching provided by embodiments of the present disclosure;

[0043] Figures 8A to 8C Transfer characteristic curves of thin film transistors fabricated with different polymer semiconductor thin films are shown; wherein, Figure 8A corresponds to the unstretched polymer semiconductor thin film, Figure 8B corresponds to the notched polymer semiconductor thin film stretched by 50%, Figure 8C corresponds to the unnotched polymer semiconductor thin film stretched by 50%. Detailed implementation manners

[0044] To make the objectives, technical solutions, and advantages of the present disclosure more clear and understandable, the following further elaborates on the present disclosure in detail with reference to specific embodiments and the accompanying drawings.

[0045] It should be noted that unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should have the ordinary meanings understood by those of ordinary skill in the art to which the present disclosure pertains. The "first", "second", and similar terms used in the embodiments of the present disclosure do not denote any order, quantity, or importance, but are only used to distinguish different components. The terms such as "include" or "comprise" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. The terms such as "connect" or "couple" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left", "right", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0046] To facilitate the understanding of the technical solutions of the present disclosure, some technical terms related to the present disclosure are introduced below.

[0047] A polymer is a material composed of macromolecules with a chain structure formed by polymerization of monomers.

[0048] A polymer semiconductor refers to a polymer having semiconductor properties.

[0049] As described in the background art section, in order to meet the requirements of stretchable organic semiconductor materials, the related technologies have problems such as complex molecular structures of materials and cumbersome processes.

[0050] In view of this, the embodiments of the present disclosure provide a polymer semiconductor thin film and a preparation method thereof, which have a plurality of notches with a predetermined area distributed at a specific density on the polymer semiconductor thin film. During the stretching process of the material, these notches can serve as stress release points, effectively dispersing the stress applied to the polymer semiconductor thin film, ensuring the stability of the morphology of the effective area of the polymer semiconductor thin film, thereby avoiding the generation of random cracks caused by stress concentration, and further helping to prevent the reduction of device performance. Such a technical solution avoids the setting of complex molecular structures, has simple preparation operations, and significantly improves the stretchable mechanical properties of the polymer semiconductor thin film, enhancing its application potential in the fields of stretchable and wearable flexible electronic devices.

[0051] In a first aspect, the embodiments of the present disclosure provide a polymer semiconductor thin film. FIG. 1 shows a schematic diagram of a polymer semiconductor thin film provided by the embodiments of the present disclosure. As Figure 1A shown, a plurality of notches are distributed on the polymer semiconductor thin film (for example, Figure 1A the rectangular pattern indicated by the arrow in Figure 1B is shown). Figure 1A FIG. Figure 1B shows a schematic diagram of the stretched state of the polymer semiconductor thin film in

[0052] In some embodiments, the area of the notch is 0.1 μm 2 to 10 mm 2 . When the area of the notch is less than 0.1 μm 2 , it is difficult to form an effective stress release area; when the area of the notch is greater than 10 mm 2When it does, it will have a great impact on the electrical and mechanical properties of the polymer semiconductor thin film. The notch within the above area range can not only serve as a stress release area, but also have a minimal impact on the overall electrical properties of the polymer semiconductor thin film, ensuring that the above polymer semiconductor thin film can be applied to flexible electronic devices.

[0053] In some alternative embodiments, the area of the notch can be 0.1 μm 2 to 8 mm 2 、0.1 μm 2 to 6 mm 2 、0.1 μm 2 to 5 mm 2 、0.1 μm 2 to 4 mm 2 、0.2 μm 2 to 5 mm 2 、0.5 μm 2 to 5 mm 2 、1 μm 2 to 5 mm 2 、2 μm 2 to 5 mm 2 、1 μm 2 to 4 mm 2 、0.2 μm 2 to 3 mm 2 、1 μm 2 to 1 mm 2 、1 μm 2 to 500 μm 2 、1 μm 2 to 400 μm 2 、1 μm 2 to 200 μm 2 and so on. It should be noted that when the notch meets the requirement of being a stress release area, the smaller the area of the notch, the more helpful it is to reduce the impact of the notch on the overall performance of the polymer semiconductor thin film.

[0054] It should be understood that in the polymer semiconductor thin film, the areas of different notches can be the same or different. For example, the area of some notches is 20 μm 2 ; the area of some notches is 50 μm 2 . The present disclosure does not limit this.

[0055] In some embodiments, the distribution density range of the notches is 0.001 to 100000 pieces / cm 2 , such as 0.001 to 80000 pieces / cm 2 、0.001 to 60000 pieces / cm 2 、0.001 to 50000 pieces / cm 2, 0.001 to 40,000 per cm 2 , 0.001 to 30,000 per cm 2 , 0.2 to 80,000 per cm 2 , 1 to 80,000 per cm 2 , 100 to 80,000 per cm 2 , 1000 to 80,000 per cm 2 , 1000 to 60,000 per cm 2 , 1000 to 40,000 per cm 2 , 10,000 to 50,000 per cm 2 etc. It should be noted that the distribution density refers to the number of notches distributed in the polymer semiconductor thin film per unit area. When the distribution density is less than 0.001 per cm 2 , the notches are difficult to meet the requirements of stress release for the notches. When the distribution density is greater than 100,000 per cm 2 , it has a greater impact on the overall performance of the polymer semiconductor thin film.

[0056] It should be understood that at different positions of the polymer semiconductor thin film, the distribution density of the notches can be the same or different. For example, the distribution density of the notches at the edge position of the polymer semiconductor thin film can be 50,000 per cm 2 , and the distribution density of the notches at the center position can be 30,000 per cm 2 . The present disclosure does not limit this.

[0057] In some embodiments, the distribution of the plurality of notches in the polymer semiconductor thin film includes at least one of regular distribution and irregular distribution. For example, the plurality of notches can be regularly distributed in the polymer semiconductor thin film, the plurality of notches can be irregularly distributed in the polymer semiconductor thin film, the plurality of notches can be partially regularly distributed and partially irregularly distributed. The present disclosure does not limit this.

[0058] Exemplarily, the regular distribution includes at least one of grid-like distribution, spiral distribution, and concentric circle distribution. Exemplarily, the irregular distribution includes at least one of random distribution and fractal geometry distribution.

[0059] In some embodiments, the depth of the notch is 50 to 100% of the thickness of the polymer semiconductor thin film. When the depth of the notch is less than 50%, it is difficult to meet the requirements of stress release. Exemplarily, the depth of the notch can be 50%, 60%, 70%, 75%, 80%, 90%, 100%, etc. of the thickness of the polymer semiconductor thin film. In other words, the notch can penetrate the polymer semiconductor thin film or not penetrate the polymer semiconductor thin film. The present disclosure does not limit this.

[0060] In some embodiments, referring to Figure 2 , the shape of the notch is selected from at least one of a circle, a rhombus, a triangle, a rectangle, and a wavy shape.

[0061] In some embodiments, the polymer semiconductor thin film includes a plurality of layer structures; wherein, the notch distributions of different layer structures are the same or different. It should be noted that the notch distribution here not only refers to the distribution rule, but also can refer to the distribution density. For example, a plurality of notches in the first layer structure are regularly distributed, and a plurality of notches in the second layer structure are irregularly distributed. Also, for example, the distribution density of a plurality of notches in the first layer structure is 40,000 / cm 2 , and the distribution density of a plurality of notches in the second layer structure is 20,000 / cm 2 .

[0062] It should be understood that using a plurality of layer structures for the polymer semiconductor thin film helps to improve the overall electrical and mechanical properties of the polymer semiconductor thin film. In particular, using different notch distributions is more helpful for combining the advantages of different distributions to obtain a polymer semiconductor thin film with better comprehensive performance.

[0063] In some embodiments, the polymer semiconductor thin film includes a polymer semiconductor and a photosensitive crosslinking agent. In some embodiments, the polymer semiconductor thin film includes an organic polymer semiconductor type photoresist. In other words, if an organic polymer semiconductor type photoresist is used to form the polymer semiconductor thin film, there is no need to add a photosensitive crosslinking agent. If a non-photosensitive polymer semiconductor is used to form the polymer semiconductor thin film, a non-photosensitive polymer semiconductor and a photosensitive crosslinking agent are required to cooperate.

[0064] In a second aspect, the embodiments of the present disclosure further provide a preparation method for any one of the above polymer semiconductor thin films.

[0065] To make the technical solutions of the present disclosure clearer and easier to understand, a preparation method for a polymer semiconductor thin film provided by the embodiments of the present disclosure will be introduced below with reference to the drawings.

[0066] In some embodiments, the preparation method includes:

[0067] First, dissolve the polymer semiconductor and the photosensitive crosslinking agent in a solvent respectively to form a polymer solution and a crosslinking agent solution.

[0068] Exemplarily, the polymer semiconductor is selected from at least one of a conjugated polymer and a non-conjugated polymer. Optionally, the conjugated polymer includes at least one of pyrrole, benzothiadiazole, imide, and thiophene. Optionally, the photosensitive crosslinking agent includes at least one of an azide group, a cinnamate group, and a bisaziridine group.

[0069] In addition, when the polymer semiconductor has photosensitive properties, the polymer semiconductor and the photosensitive crosslinking agent can be the same material.

[0070] It should be understood that the present disclosure does not specifically limit the solvent, as long as it can dissolve the polymer semiconductor and the photosensitive crosslinking agent, including but not limited to halogenated organic solvents and aromatic solvents. Exemplarily, the halogenated organic solvent can be chloroform, dichloromethane, etc.; the aromatic solvent can be benzene, phenol, etc.

[0071] In some embodiments, the concentrations of the polymer solution and the crosslinking agent solution are respectively 0.01 to 100 mg / ml, such as 0.02 mg / ml, 0.1 mg / ml, 0.5 mg / ml, 2 mg / ml, 10 mg / ml, 50 mg / ml, 100 mg / ml, etc.

[0072] Next, the photosensitive crosslinking agent solvent is added to the polymer solution in proportion to form a thin film solution.

[0073] Exemplarily, in the thin film solution, the mass ratio of the photosensitive crosslinking agent to the polymer semiconductor is 0.01% to 99%, such as 0.01% to 50%, 0.01% to 25%, 0.01% to 20%, 1% to 20%, 2% to 20%, 2% to 15%, etc. Based on this, the addition ratio can be determined according to the concentrations of the polymer solution and the crosslinking agent solution, and the present disclosure does not limit this.

[0074] It should be noted that the concentrations of the above polymer solution and crosslinking agent solution, and the mass ratio of the photosensitive crosslinking agent to the polymer semiconductor are all exemplary, and any solution concentration and mass ratio that meet the film-forming requirements can be applied to the preparation method of the present disclosure, and the present disclosure does not limit this.

[0075] Then, the thin film solution is formed into a first thin film on a substrate by a preset film-forming method. Optionally, the preset film-forming method can be spin coating, screen printing, inkjet printing, spray pyrolysis, dip coating, etc., and the present disclosure does not limit this.

[0076] Next, a photomask is used to cover the first thin film, and photo-crosslinking is performed under a predetermined light illumination condition to obtain a second thin film; wherein, notch patterns are distributed on the photomask.

[0077] In some embodiments, the photomask has different light transmittance in the area of the notch pattern and the area outside the notch pattern. Figure 2 The design schematic diagrams of photomasks with different shapes provided by the embodiments of the present disclosure are shown. As Figure 2 shown, notch patterns are distributed on the photomask (correspondingFigure 2 the black area). The black area and the white area have different light transmittance rates. For example, the light transmittance rate of the black area is 0 to 5%; the light transmittance rate of the white area is 95 to 100%.

[0078] Under a predetermined illumination condition, light is difficult to pass through at the position of the notch pattern on the photomask, and the corresponding area of the thin film is difficult to undergo photocrosslinking curing to form a notch; light can normally pass through the area outside the notch pattern on the photomask, and the corresponding area of the thin film undergoes photocrosslinking curing.

[0079] It should be understood that the notch pattern is used to generate notches on the polymer semiconductor thin film. The area, distribution density, distribution rule, and shape of the notch pattern correspond to the area, distribution density, distribution rule, and shape of the foregoing notch. In other words, the foregoing limitations on the area, distribution density, distribution rule, and shape of the notch of the polymer semiconductor thin film also apply to the notch pattern of the photomask, and will not be elaborated here.

[0080] Figure 3 shows a design schematic diagram of a photomask with a circular pattern provided by an embodiment of the present disclosure. As Figure 3 shown, the circular pattern with a larger diameter represents the notch pattern, and the diameter of the notch pattern is 5 μm. The distance between two adjacent notch patterns is 50 μm.

[0081] In some embodiments, the predetermined illumination condition includes that the wavelength of light is 100 to 800 nm. Optionally, the predetermined illumination condition includes ultraviolet light with a wavelength of 300 to 400 nm irradiating for 10 to 400 seconds, and the lamp power is 10 to 100 mW / cm 2 .

[0082] Finally, the second thin film is immersed in a solvent, and after taking it out and rinsing, the polymer semiconductor thin film is obtained; wherein, a plurality of notches corresponding to the notch pattern are distributed on the polymer semiconductor thin film.

[0083] It should be understood that the immersion solution here can be the aforementioned solvent for dissolving the polymer semiconductor and the photosensitive crosslinking agent, which can remove the uncrosslinked and uncured polymer semiconductor and photosensitive crosslinking agent. The rinsing liquid can be a liquid compatible with the solvent, which can be a polar solvent, such as isopropyl alcohol, tetrahydrofuran, etc., or a non-polar solvent, such as cyclohexane, etc. The present disclosure does not make any limitations in this regard.

[0084] Figure 4 shows a microscope image of a polymer semiconductor thin film provided by an embodiment of the present disclosure. It should be noted that Figure 4 the shown polymer semiconductor thin film is based on Figure 3 the photomask shown in Figure 4It can be seen that there are notches with a diameter of 5 μm on the polymer semiconductor film (corresponding to Figure 4 the pink dots in

[0085] ), and the distance between adjacent notches is 50 μm.

[0086] A preparation method of a polymer semiconductor film provided by an embodiment of the present disclosure prepares notches by photolithography. The whole process is simple, can be applied to various polymer semiconductors, has a certain universality, and is cost-effective, easy to mass-produce, and has good compatibility with existing preparation processes.

[0087] Example 1

[0088] First, the polymer semiconductor and the photosensitive crosslinking agent are respectively dissolved in a chloroform solvent, and the concentration range is 0.01 - 100 mg / mL.

[0089] Among them, the polymer semiconductor is as shown in formula (Ⅰ); the photosensitive crosslinking agent is as shown in formula (II);

[0090]

[0091] Next, the chloroform solution of formula (II) is added to the chloroform solution of formula (Ⅰ) at a mass ratio of 0.01% - 99%, and a first film is formed on the substrate by a preset film-forming method. Here, the substrate can be a glass substrate, a metal substrate, etc., and the present disclosure does not limit this.

[0092] Then, use the Figure 3 shown photomask to cover the first film, irradiate it with ultraviolet light of 300 - 400 nm for 10 - 400 seconds, and the lamp power is 10 - 100 mW / cm 2 to carry out photo-crosslinking curing to obtain a second film.

[0093] Finally, soak the second film in the chloroform solution for 10 - 300 seconds; take it out and rinse it with isopropanol to obtain a polymer semiconductor film; among them, the polymer semiconductor film includes circular notches (as Figure 4 shown).

[0094] Comparative Example 1

[0095] The difference between this comparative example and Example 1 lies only in the photomask. The circular pattern in Figure 3 is removed from the photomask of this comparative example, and the rest are exactly the same.

[0096] Performance Test

[0097] The polymer semiconductor films prepared in Example 1 and Comparative Example 1 were transferred onto a flexible substrate by a transfer technique. Here, the flexible substrate can be Polydimethylsiloxane (PDMS), Polyethylene Terephthalate (PET), Polyimide (PI), etc.

[0098] Observed the formation of surface cracks in the polymer semiconductor film under different stretching conditions

[0099] Figure 5 An optical microscope image of the polymer semiconductor film prepared in Example 1 of the present disclosure under 50% tensile strain is shown. From Figure 5 it can be seen that the notch of the polymer semiconductor film is significantly deformed, while other regions are not damaged, and the surface stress is mainly concentrated at the patterned preset notch. Figure 6 An optical microscope image of the polymer semiconductor film provided in Comparative Example 1 under different tensile strains is shown. From Figure 6 it can be seen that the surface of the polymer semiconductor film in Comparative Example 1 is significantly damaged under 50% tensile stress. Comparing Figure 5 and Figure 6 it can be seen that the technical solution of forming a notch on the surface of the polymer semiconductor film provided in the embodiments of the present disclosure significantly improves the stretchable mechanical properties of the polymer semiconductor film.

[0100] Furthermore, as Figure 7 shown, the surface morphology of the polymer semiconductor film outside the notch region after undergoing 50% tensile deformation was characterized by atomic force microscope scanning. From Figure 7 it can be seen that, compared with before stretching, the surface morphology of the polymer semiconductor film outside the notch region is maintained well after 50% stretching, indicating that the setting of the notch greatly slows down the damage of stretching to the effective region of the film.

[0101] Thin-film transistor performance test

[0102] The polymer semiconductor films of Example 1 and Comparative Example 1 were transferred onto a PDMS substrate. Under different applied stresses (here, the stress can be zero), the polymer semiconductor films were transferred onto a Si / SiO2 wafer with pre-evaporated source and drain electrodes to obtain thin film transistors, and the electrical properties of the thin film transistors were detected. The results are as Figures 8A to 8C and Table 1 show.

[0103] Figures 8A to 8C An output characteristic curve of thin film transistors prepared with different polymer semiconductor films is shown. Among them, Figure 8A corresponds to the unstretched polymer semiconductor film. Figure 8BNotched polymer semiconductor film corresponding to 50% stretching (polymer semiconductor film of Example 1). Figure 8C Unnotched polymer semiconductor film corresponding to 50% stretching (polymer semiconductor film of Comparative Example 1).

[0104] It should be noted that, when the stress is zero, the polymer semiconductor films of Example 1 and Comparative Example 1 are similar in properties. Therefore, the initial films in Table 8A and Table 1 can represent the electrical properties of the polymer semiconductor films of Example 1 and Comparative Example 1 without stretching.

[0105] Comparison Figure 8A and Figure 8B , Figure 8C It can be seen that, compared with the unstretched polymer semiconductor film, the transfer characteristic curve of the corresponding thin-film transistor of the polymer semiconductor film of Example 1 changes less under 50% stretching, indicating that under the stretching condition, the polymer semiconductor film of Example 1 has less influence on the performance of the thin-film transistor; the transfer characteristic curve of the corresponding thin-film transistor of the polymer semiconductor film of Comparative Example 1 changes significantly under 50% stretching, indicating that under the stretching condition, the polymer semiconductor film of Comparative Example 1 has a greater influence on the performance of the thin-film transistor.

[0106] Table 1

[0107]

[0108] Furthermore, referring to Table 1, the device mobility of the polymer semiconductor film of Example 1 after 50% strain stretching can reach 1.91 cm 2 V -1 s -1 , and the mobility retention rate compared with the initial film reaches 81%. While for the polymer semiconductor film of Comparative Example 1 without setting a stress release point, the device mobility drops to 0.15 cm 2 V -1 s -1 under the same conditions, and the film mobility retention rate is only 6%. In addition, compared with the performance of the polymer semiconductor film of Comparative Example 1 after 50% stretching, the polymer semiconductor film of Example 1 shows significant advantages in both the on / off ratio and the threshold voltage after 50% stretching.

[0109] In summary, a polymer semiconductor film provided by an embodiment of the present disclosure, based on the introduced notch, not only effectively improves the stretchability of the material, but also shows excellent electrical properties.

[0110] Those of ordinary skill in the art should understand that the discussion of any of the above embodiments is only exemplary and is not intended to imply that the scope of the present disclosure (including the claims) is limited to these examples; under the concept of the present disclosure, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations in different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of brevity.

[0111] The embodiments of the present disclosure are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A polymer semiconductor thin film, characterized in that, A plurality of notches are distributed on the polymer semiconductor thin film; wherein, The area of the notch is 0.1 μm 2 ~10 mm 2 ; the distribution density range of the notches is 0.001~100,000 pieces / cm 2 .

2. The polymer semiconductor thin film according to claim 1, wherein the distribution of the plurality of notches on the polymer semiconductor thin film includes at least one of regular distribution and irregular distribution.

3. The polymer semiconductor thin film according to claim 2, wherein The regular distribution includes at least one of grid-like distribution, spiral distribution, and concentric circle distribution; and / or The irregular distribution includes at least one of random distribution and fractal geometry distribution.

4. The polymer semiconductor thin film according to claim 1, characterized in that, The depth of the notch is 50-100% of the thickness of the polymer semiconductor thin film.

5. The polymer semiconductor thin film according to claim 1, characterized in that, The shape of the notch is selected from at least one of circular, rhombic, triangular, rectangular, and wavy.

6. The polymer semiconductor thin film according to claim 1, wherein The polymer semiconductor thin film includes a plurality of layer structures; wherein, the notch distributions of different layer structures are the same or different.

7. The polymer semiconductor thin film according to claim 1, characterized in that, The polymer semiconductor thin film includes a polymer semiconductor and a photosensitive crosslinking agent; or The polymer semiconductor thin film includes an organic polymer semiconductor type photoresist.

8. A method for preparing a polymer semiconductor thin film, characterized in that, Comprising: Dissolving a polymer semiconductor and a photosensitive crosslinking agent in solvents respectively to form a polymer solution and a crosslinking agent solution; Adding the crosslinking agent solution into the polymer solution in proportion to form a thin film solution; Forming a first thin film on a substrate by the preset film-forming method with the thin film solution; Covering the first thin film with a photomask, and performing photocrosslinking under a predetermined light illumination condition to obtain a second thin film; wherein, a notch pattern is distributed on the photomask; Soaking the second thin film in the solvent, taking it out and rinsing to obtain the polymer semiconductor thin film; wherein, A plurality of notches corresponding to the notch pattern are distributed on the polymer semiconductor thin film.

9. The preparation method according to claim 8, characterized in that, The photomask has different light transmittance in the area of the notch pattern and the area outside the notch pattern.

10. The preparation method according to claim 8, characterized in that, The concentrations of the polymer solution and the crosslinking agent solution are respectively 0.01-100 mg / ml; and / or In the thin film solution, the mass ratio of the photosensitive crosslinking agent to the polymer semiconductor is 0.01%-99%.

11. The preparation method according to claim 8, wherein, The polymer semiconductor is selected from at least one of conjugated polymers and non-conjugated polymers.

12. The preparation method according to claim 11, wherein, The conjugated polymer includes at least one of pyrrole, benzothiadiazole, imide, and thiophene; and / or The photosensitive crosslinking agent includes at least one of azide group, cinnamate group, and bisaziridine group.

13. The preparation method according to claim 8, characterized in that, When the polymer semiconductor has photosensitive properties, the polymer semiconductor and the photosensitive crosslinking agent are the same material.

14. The preparation method according to claim 8, characterized in that, The polymer semiconductor is as shown in formula (Ⅰ); the photosensitive crosslinking agent is as shown in formula (II); and / or The predetermined illumination condition includes ultraviolet light irradiation with a wavelength of 300 to 400 nm for 10 to 400 seconds, and the lamp power is 10 to 100 mW / cm 2 .

15. The preparation method according to claim 8, characterized in that, The solvent includes at least one of halogenated organic solvents and aromatic solvents; and / or The solvent for rinsing includes at least one of isopropyl alcohol, tetrahydrofuran, and cyclohexane.

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