Magnetic device

Abstract

Provided is a magnetic device capable of stably operating. A magnetic device according to an embodiment includes a first element portion. The first element portion includes a first magnetic layer, a first non-magnetic member, a first magnetic member, and a first intermediate layer. The first non-magnetic layer is electrically conductive. A direction from the first magnetic layer to the first non-magnetic member is along a first direction. The first magnetic member is provided between the first magnetic layer and the first non-magnetic member, and is in contact with the first non-magnetic member. The first intermediate layer is provided between the first magnetic layer and the first magnetic member, and is non-magnetic. The first non-magnetic member includes at least one of a first material and a second material. The first material contains a first element and a second element, and the second element contains oxygen or nitrogen. The first element includes Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, Zn, Mg, or Al. The second material includes a third element and a fourth element, the third element including at least one element selected from the group consisting of Pt, Cu, and Hf, and the fourth element including Al.

Description

Technical Field

[0001] Embodiments of the present invention relate to magnetic devices. Background Art

[0002] Magnetic devices including magnetic layers are applied to various uses. For magnetic devices, stable operation is desired.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent No. 6545853 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] Embodiments of the present invention provide a magnetic device capable of operating stably.

[0008] Technical Means for Solving the Technical Problem

[0009] The magnetic device of the embodiment includes a first element portion. The first element portion includes a first magnetic layer, a first non-magnetic member, a first magnetic member, and a first intermediate layer. The first non-magnetic layer is conductive. The direction from the first magnetic layer to the first non-magnetic member is along a first direction. The first magnetic member is disposed between the first magnetic layer and the first non-magnetic member and is in contact with the first non-magnetic member. The first intermediate layer is disposed between the first magnetic layer and the first magnetic member and is non-magnetic. The first non-magnetic member contains at least any one of a first material and a second material. The first material contains a first element and a second element. The first element contains one of a first type of element and a second type of element. The second element contains at least one selected from the group consisting of oxygen and nitrogen. The first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second type of element contains at least one selected from the group consisting of Mg and Al. The second material contains a third element and a fourth element. The third element contains at least one selected from the group consisting of Pt, Cu, and Hf. The fourth element contains Al. Brief Description of the Drawings

[0010] Figure 1 FIG. is a schematic cross-sectional view illustrating the magnetic device of the first embodiment.

[0011] Figure 2 FIG. is a schematic perspective view illustrating the magnetic device of the first embodiment.

[0012] Figure 3Schematic cross-sectional view showing the magnetic device of the first embodiment.

[0013] Figure 4 (a) of Figure 4 and (b) of are schematic cross-sectional views showing the magnetic device of the first embodiment.

[0014] Figure 5 (a) of Figure 5 and (b) of are schematic cross-sectional views showing the magnetic device of the first embodiment.

[0015] Figure 6 (a) of Figure 6 and (b) of are schematic cross-sectional views showing the magnetic device of the first embodiment.

[0016] Figure 7 (a) of Figure 7 and (b) of are schematic cross-sectional views showing the magnetic device of the first embodiment.

[0017] Figure 8 Schematic cross-sectional view showing the magnetic device of the second embodiment.

[0018] Figure 9 Schematic cross-sectional view showing the magnetic device of the third embodiment.

[0019] Reference numerals

[0020] 10E: First element portion; 11: First magnetic layer; 15: First intermediate layer; 21: First magnetic member; 21a, 21b: First position, second position; 21m: First magnetic film; 21n: First non-magnetic film; 31, 32: First non-magnetic member, second non-magnetic member; 31a, 31b: First non-magnetic portion, second non-magnetic portion; 31f, 31g: First surface, second surface; 41, 42: First insulating member, second insulating member; 41A, 42A: First opposed insulating member, second opposed insulating member; 42g, 42Ag: Gap; 51: First conductive member; 51a to 51e: First conductive portion to fifth conductive portion; 70: Control portion; 110, 111, 120 to 122, 130, 140: Magnetic device; D1 to D3: First direction to third direction; Va1: Voltage; i1: First current; t11, t15, t21m, t21n, t31, t35: Thickness. Detailed embodiments

[0021] The embodiments of the present invention will be described below with reference to the drawings.

[0022] The accompanying drawings are schematic or conceptual, and the relationships between the thicknesses and widths of the respective parts, the size ratios between the parts, etc. are not necessarily the same as in reality. Even when representing the same part, the mutual dimensions and ratios are sometimes shown differently depending on the drawing.

[0023] In the description of the present application and each of the accompanying drawings, for elements that are the same as those already described in the prior drawings, the same reference numerals are attached and the detailed description is omitted as appropriate.

[0024] (First Embodiment)

[0025] Figure 1 FIG. is a schematic cross-sectional view illustrating the magnetic device of the first embodiment.

[0026] Figure 2 FIG. is a schematic perspective view illustrating the magnetic device of the first embodiment.

[0027] The magnetic device 110 of the embodiment includes a first element portion 10E. The first element portion 10E includes a first magnetic layer 11, a first non-magnetic member 31, a first magnetic member 21, and a first intermediate layer 15.

[0028] The first non-magnetic member 31 is conductive. The direction from the first magnetic layer 11 to the first non-magnetic member 31 is along the first direction D1.

[0029] Let the first direction D1 be the Z-axis direction. Let one direction perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to the Z-axis direction and the X-axis direction be the Y-axis direction.

[0030] The first magnetic member 21 is disposed between the first magnetic layer 11 and the first non-magnetic member 31. The first magnetic member 21 is in contact with the first non-magnetic member 31. The first intermediate layer 15 is disposed between the first magnetic layer 11 and the first magnetic member 21. The first intermediate layer 15 is non-magnetic. For example, the first intermediate layer 15 may be in contact with the first magnetic layer 11 and the first magnetic member 21.

[0031] The first non-magnetic member 31 contains at least any one of the first material and the second material. The first material contains a first element and a second element. The first element contains one of a first type of element and a second type of element, and the second element contains at least one selected from the group consisting of oxygen and nitrogen. The first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second type of element contains at least one selected from the group consisting of Mg and Al. The second material contains a third element and a fourth element. The third element contains at least one selected from the group consisting of Pt, Cu, and Hf, and the fourth element contains Al. For example, the first non-magnetic member 31 contains Ru and oxygen. For example, the first non-magnetic member 31 contains Al and Pt, etc. Thus, stable operation can be obtained, as will be described later. Examples of the first material and the second material will be described later.

[0032] In the embodiment, the first intermediate layer 15 contains, for example, at least one selected from the group consisting of MgO, CaO, SrO, TiO, VO, NbO, and Al2O3. The first element portion 10E is, for example, a TMR (Tunnel Magneto Resistance) element.

[0033] The first magnetic layer 11 is, for example, a free magnetization layer. The first magnetic member 21 is, for example, a magnetization reference layer. Compared with the magnetization of the first magnetic layer 11, the magnetization of the first magnetic member 21 is difficult to change.

[0034] The first magnetic layer 11 contains at least one selected from the group consisting of Fe, Co, and Ni. The first magnetic layer 11 may further contain boron. The first magnetic layer 11 is, for example, a ferromagnetic layer.

[0035] As Figure 1 shown, in one example, the first magnetic member 21 includes a plurality of first magnetic films 21m and a plurality of first non-magnetic films 21n. In the first direction D1, one of the plurality of first non-magnetic films 21n is between one of the plurality of first magnetic films 21m and another of the plurality of first magnetic films 21m. One of the plurality of first magnetic films 21m is between one of the plurality of first non-magnetic films 21n and another of the plurality of first non-magnetic films 21n. For example, the first magnetic films 21m and the first non-magnetic films 21n are alternately arranged. The first magnetic film 21m is in contact with the first non-magnetic film 21n.

[0036] For example, the first magnetic member 21 may be a SAF (synthetic anti-ferromagnetic) layer. One of the plurality of first magnetic films 21m may be antiferromagnetically coupled with another one of the plurality of first magnetic films 21m. For example, by using the SAF structure, the magnetization of the plurality of first magnetic films 21m is stabilized. The magnetization of the first magnetic member 21 is stabilized.

[0037] For example, the first magnetic member 21 may satisfy the following first condition or second condition. Under the first condition, one of the plurality of first non-magnetic films 21n contains Ru. The thickness t21n of one of the plurality of first non-magnetic films 21n in the first direction D1 is 0.2 nm or more and 2 nm or less.

[0038] Under the second condition, one of the plurality of first non-magnetic films 21n contains Ir. The thickness t21n of one of the plurality of first non-magnetic films 21n in the first direction D1 is 0.2 nm or more and 2 nm or less.

[0039] By using such a first condition or second condition, antiferromagnetic coupling can be easily obtained. On the other hand, the plurality of first magnetic films 21m contain at least one selected from the group consisting of Fe, Co, and Ni. The plurality of first magnetic films 21m may further contain boron. The thickness t21m of the plurality of first magnetic films 21m in the first direction D1 may be, for example, 0.2 nm or more and 5 nm or less.

[0040] As described above, in one example, the first magnetic member 21 functions as a magnetization reference layer. In the reference example, an antiferromagnetic member (such as IrMn or PtMn, etc.) is provided on the first magnetic member 21. Accordingly, the magnetization of the first magnetic member 21 can be fixed in the target direction. In such a reference example, it is known that when the size of the magnetic element (such as the first element portion 10E) becomes small, the magnetization of the first magnetic member 21 easily becomes unstable. For example, when the size of the magnetic element (such as the first element portion 10E) becomes small, the size of the magnetic element approaches the size of the grains contained in the antiferromagnetic member. Accordingly, the state of the grains contained in the antiferromagnetic member in the magnetic element becomes non-uniform. It is generally considered that as a result, the magnetization of the first magnetic member 21 becomes unstable.

[0041] In contrast, in the embodiment, the above-described first non-magnetic member 31 is provided in place of the antiferromagnetic member. The first non-magnetic member 31 contains the above-described first material or second material. The first material contains a first element and a second element. For example, it is generally considered that by introducing the second element (oxygen and / or nitrogen) into the member containing the first element, the volume of the first non-magnetic member 31 changes. Accordingly, stress is generated in the first non-magnetic member 31. The second material contains a third element and a fourth element (Al). For example, it is generally considered that by introducing the third element (such as Pt, Cu, and / or Hf) into the member containing the fourth element (Al), the volume of the first non-magnetic member 31 changes. Accordingly, stress is generated in the first non-magnetic member 31. It is generally considered that stress is applied to the first magnetic member 21, and the magnetization direction of the first magnetic member 21 is controlled.

[0042] In the first non-magnetic member 31, the above problem of the grains of the antiferromagnetic member does not occur. Even when the size of the magnetic element (e.g., the first element portion 10E) is reduced, the magnetization of the first magnetic member 21 is stably controlled.

[0043] The magnetization of the first magnetic member 21 is stable, so the characteristics of the magnetic element are stable. For example, the stability of the characteristics of the first magnetic member 21 is improved. For example, a large resistance change rate can be obtained. For example, a large read signal can be obtained. For example, stress is applied to the first magnetic layer 11. For example, good retention can be obtained. Even when the size of the first element portion 10E is reduced, stable characteristics can be maintained. According to the embodiment, a magnetic device that can operate stably can be provided.

[0044] In the embodiment, for example, the first non-magnetic member 31 can apply stress to the first magnetic member 21. The stress can be, for example, one of tensile stress and compressive stress. The stress can have a component in a direction intersecting the first direction D1 (a direction along the X-Y plane).

[0045] As described above, the first material contains a first element and a second element. The first element contains one of a first type of element and a second type of element. The second element contains at least one selected from the group consisting of oxygen and nitrogen. The first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. For example, when oxygen is introduced into the film of the first type of element, the volume of the film increases. It is generally considered that the increase in volume is, for example, due to the difference between the structure (e.g., crystal structure) of the film of the first type of element and the structure (e.g., crystal structure) of the film containing the first type of element and oxygen.

[0046] The effect of volume increase is large for Ru, Ta, Mo, or W. The effect of volume increase is medium for Hf, Cr, Cu, and Pd. The effect of volume increase is relatively small for V, Ti, or Zn.

[0047] The second element includes at least one selected from the group consisting of Mg and Al. For example, when oxygen is introduced into the film of the second element, the volume of the film decreases. It is generally considered that the decrease in volume is due to, for example, the difference between the structure (e.g., crystal structure) of the film of the second element and the structure (e.g., crystal structure) of the film containing the second element and oxygen.

[0048] Among the above various elements, Hf, Al, and Mg are not easily mixed with the layer containing Co, Fe, etc. included in the first magnetic member 21. When the first non-magnetic member 31 contains Hf, Al, or Mg, it is possible to suppress an adverse effect on the characteristics of the first magnetic member 21 and apply stress to the first magnetic member 21 at the same time.

[0049] As described above, the first non-magnetic member 31 contains the first material or the second material, thereby generating stress between the first non-magnetic member 31 and the first magnetic member 21. This stress can have anisotropy in the X-Y plane. The anisotropy can be induced by various structures.

[0050] For example, as Figure 1 and Figure 2 shown, the magnetic device 110 may further include a first conductive member 51. The first conductive member 51 includes a first conductive portion 51a, a second conductive portion 51b, and a third conductive portion 51c. The third conductive portion 51c is disposed between the first conductive portion 51a and the second conductive portion 51b. The second direction D2 from the first conductive portion 51a to the second conductive portion 51b intersects the first direction D1. The second direction D2 is, for example, the X-axis direction.

[0051] As Figure 2 shown, the first conductive portion 51a and the second conductive portion 51b exist on both sides of the position of the first element portion 10E in the X-axis direction. On the other hand, the first conductive member 51 does not exist on both sides of the position of the first element portion 10E in the Y-axis direction. In this way, there is anisotropy in the X-Y plane. Accordingly, anisotropy of stress can be induced. The anisotropy of stress can be used, for example, to control the magnetization of the first magnetic member 21.

[0052] In other examples, as will be described later, an insulating member can be provided around the first element portion 10E, and the structure of the insulating member is different in the X-Y plane. Accordingly, anisotropy of stress can be induced. The anisotropy of stress can be used, for example, to control the magnetization of the first magnetic member 21.

[0053] In another example, anisotropy can be set for the shape of at least any one of the first non-magnetic member 31 and the first magnetic member 21. Accordingly, anisotropy of stress can be induced. The magnetization of the first magnetic member 21 can be controlled by using the stress anisotropy, for example.

[0054] For example, as Figure 2 shown, the length 31y of the first non-magnetic member 31 in the third direction D3 can be different from the length 31x of the first non-magnetic member 31 in the second direction D2. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction.

[0055] In one example, the length 31y is longer than the length 31x. Accordingly, in-plane anisotropy of stress is generated in the first non-magnetic member 31.

[0056] For example, as Figure 2 shown, the length 21y of the first magnetic member 21 in the third direction D3 can be different from the length 21x of the first magnetic member 21 in the second direction D2. For example, the length 21y is longer than the length 21x. Accordingly, in-plane anisotropy of stress is applied to the first magnetic member 21.

[0057] By using the in-plane anisotropy of the stress applied to the first magnetic member 21, in-plane anisotropy can be generated in the lattice length of the first magnetic member 21.

[0058] For example, the third-direction lattice length of at least a part of the first magnetic member 21 in the third direction D3 can be different from the second-direction lattice length of at least a part of the first magnetic member 21 in the second direction D2. For example, the third-direction lattice length is longer than the second-direction lattice length.

[0059] When the third-direction lattice length is longer than the second-direction lattice length, the first magnetic member 21 is stretched in the third direction D3. At this time, the first magnetic member 21 is compressed in the second direction D2.

[0060] When the third-direction lattice length is shorter than the second-direction lattice length, the first magnetic member 21 is stretched in the second direction D2. At this time, the first magnetic member 21 is compressed in the third direction D3.

[0061] When the magnetostrictive constant of the first magnetic member 21 is positive, the magnetization of the first magnetic member 21 is along the stretched direction. When the magnetostriction of the first magnetic member 21 is negative, the magnetization of the first magnetic member 21 is along the compressed direction.

[0062] In an embodiment, for example, stress is applied to the first magnetic member 21 by the first non-magnetic member 31. As described above, the anisotropy of stress can be generated by using at least any one of the shape of the first conductive member 51, the structure of the insulating member provided around the first element portion 10E, the shape of the first non-magnetic member 31, and the shape of the first magnetic member 21. An anisotropic stress is generated in the first magnetic member 21, thereby stably controlling the magnetization of the first magnetic member 21. Various examples of inducing the anisotropy of stress will be described later.

[0063] Stress is introduced into the first magnetic member 21 by the influence of the first non-magnetic member 31. The stress can vary along the Z-axis direction depending on the distance from the first non-magnetic member 31. The lattice length can vary with the stress. For example, the lattice length of the first magnetic member 21 can vary along the Z-axis direction. The stress applied from the first non-magnetic member 31 can decrease as the distance from the first non-magnetic member 31 becomes longer.

[0064] As Figure 1 shown, for example, the first magnetic member 21 includes a first position 21a and a second position 21b. The second position 21b is between the first position 21a and the first non-magnetic member 31. The first position lattice length along the cross direction intersecting the first direction D1 at the first position 21a is different from the second position lattice length along the above cross direction at the second position 21b. The cross direction is, for example, an arbitrary direction along the X-Y plane (for example, the Y-axis direction). The first position 21a is far from the first non-magnetic member 31. The second position 21b is close to the first non-magnetic member 31.

[0065] For example, when the first magnetic member 21 is subjected to tensile stress, the second position lattice length is longer than the first position lattice length.

[0066] For example, when the first magnetic member 21 is subjected to compressive stress, the second position lattice length is shorter than the first position lattice length.

[0067] As described above, the first material contains a first element (one of the first type element and the second type element, for example, Ru) and a second element (at least one selected from the group consisting of oxygen and nitrogen). For example, by introducing the second element into the member containing the first element, the volume of the member changes (for example, one of an increase and a decrease). The second element is preferably uniformly introduced in the thickness direction of the first non-magnetic member 31. Accordingly, it is easy to apply a large stress from the first non-magnetic member 31 to the first magnetic member 21.

[0068] As Figure 1As shown, the first non-magnetic member 31 includes a first non-magnetic portion 31a and a second non-magnetic portion 31b. The first non-magnetic portion 31a includes a first surface 31f. The second non-magnetic portion 31b includes a second surface 31g. The first surface 31f faces, for example, the first magnetic member 21. The first surface 31f is in contact with, for example, the first magnetic member 21. The first surface 31f is between the first magnetic member 21 and the second surface 31g in the first direction D1. The first non-magnetic portion 31a is a deeper portion. The second non-magnetic portion 31b is a shallower portion.

[0069] The difference between the concentration of the second element in the first non-magnetic portion 31a (the first concentration) and the concentration of the second element in the second non-magnetic portion 31b (the second concentration) is small. For example, the absolute value of the difference between the first concentration and the second concentration and the first ratio of the first concentration is 0.2 or less.

[0070] For example, in the first non-magnetic portion 31a (the deeper portion) and the second non-magnetic portion 31b (the shallower portion), the concentration difference of the second element (oxygen and / or nitrogen) is not large, and the second element is introduced. Accordingly, a large stress can be stably obtained.

[0071] In an embodiment, a part of the first magnetic member 21 may contain the second element. For example, the concentration of the second element in the first magnetic member 21 may decrease as it is farther away from the first non-magnetic member 31. As described above, the first magnetic member 21 includes a first position 21a and a second position 21b. The second position 21b is between the first position 21a and the first non-magnetic member 31. The concentration of the second element in the second position 21b is higher than the concentration of the second element in the first position 21a. Alternatively, the first position 21a does not contain oxygen.

[0072] In an example of forming the first non-magnetic member 31, after forming a film containing the first element, the film may be treated with a gas containing the second element. For example, when the first element is Ru and the second element is oxygen, the combination of forming a Ru film with a thickness of 1 nm and the treatment with oxygen may be repeatedly performed. By treating the Ru film with a thickness of 1 nm with oxygen, oxygen is taken into the Ru film. By repeating these combinations multiple times, oxygen is stably and highly concentratedly introduced into each of the multiple Ru films. By repeating the above combination 10 times, the first non-magnetic member 31 with a thickness of about 10 nm can be obtained. For example, it is easy to obtain a low first ratio. Heat treatment may be performed as appropriate.

[0073] As described above, the first non-magnetic member 31 may contain the second material. In this case, the difference between the concentration of the third element in the first non-magnetic portion 31a and the concentration of the third element in the second non-magnetic portion 31b is small. For example, the absolute value of the difference between their concentrations and the first ratio of the concentration of the third element in the first non-magnetic portion 31a is 0.2 or less.

[0074] The difference in concentration between the third element in the first non-magnetic portion 31a and the fourth element in the second non-magnetic portion 31b is small. For example, the absolute value of the difference in their concentrations and the first ratio of the concentration of the fourth element in the first non-magnetic portion 31a are 0.2 or less.

[0075] In the first non-magnetic member 31, for example, a film containing the third element (at least one selected from the group consisting of Pt, Cu, and Hf) and a film containing the fourth element (Al) can be alternately provided and heat-treated.

[0076] When the first non-magnetic member 31 contains Al and Pt, at least one of Pt2Al3 and PtAl2 can be formed by heat treatment at 300°C or higher and 550°C or lower. The first non-magnetic member 31 can contain, for example, an intermetallic compound. Stress is generated by forming the intermetallic compound.

[0077] When the first non-magnetic member 31 contains Al and Cu, a phase change can be generated by heat treatment at 200°C or higher and 400°C or lower. For example, Al-4Cu can be formed.

[0078] When the first non-magnetic member 31 contains Al and Hf, HfAl3 is formed by heat treatment at 350°C or higher and 650°C or lower. For example, a phase change from the α-phase to the β-phase occurs.

[0079] As described above, stress is also generated when the second material described above is applied to the first non-magnetic member 31. For example, after forming the film as the first non-magnetic member 31, heat treatment is performed at 200°C or higher and 650°C or lower. The temperature of the heat treatment can be, for example, 300°C or higher and 400°C or lower. Under this condition, for example, good compatibility with the memory manufacturing process can be obtained. Stress is generated by the heat treatment after the above-described film formation. It is generally considered that stress is related to, for example, the mutual diffusion of elements by heat treatment, the change in crystal structure, and / or the change in lattice constant.

[0080] When the film containing the third element and the film containing the fourth element are alternately stacked on the first magnetic member 21, the film containing the third element can be in contact with the first magnetic member 21. The fourth element (Al) is relatively easy to move (diffuse) compared to the third element. By making the film containing the third element in contact with the first magnetic member 21, the movement of the fourth element can be suppressed.

[0081] When the second material described above is applied to the first non-magnetic member 31, the structure described as the first material can also be provided.

[0082] In the embodiment, the thickness t31 of the first non-magnetic member 31 in the first direction D1 (seeFigure 1 )For example, it is 1 nm or more and 50 nm or less. Since the thickness t31 is 1 nm or more, stable stress can be easily obtained, for example, and the magnetization of the first magnetic member 21 can be stably controlled. Since the thickness t31 is 50 nm or less, the element can be easily processed, for example, and a fine element can be easily obtained.

[0083] In the embodiment, the thickness t11 of the first magnetic layer 11 in the first direction D1 (refer to Figure 1 ) can be, for example, 0.5 nm or more and 10 nm or less. The thickness t15 of the first intermediate layer 15 in the first direction D1 (refer to Figure 1 ) can be, for example, 0.3 nm or more and 3 nm or less.

[0084] As described above, the magnetic device 110 may further include a first conductive member 51. At least a part of the first conductive member 51 may be in contact with the first magnetic layer 11. The first conductive member 51 contains, for example, at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0085] For example, the current flowing through the first conductive member 51 acts on the first magnetic layer 11. Accordingly, the magnetization of the first magnetic layer 11 (magnetization free layer) can be controlled. For example, the magnetization of the first magnetic layer 11 is controlled by spin orbit torque.

[0086] As Figure 2 shown, the magnetic device 110 may include a control unit 70. The control unit 70 is electrically connected to the first conductive member 51 and the first non-magnetic member 31, for example.

[0087] As described above (refer to Figure 2 ), the first conductive member 51 includes a first conductive portion 51a, a second conductive portion 51b, and a third conductive portion 51c. The third conductive portion 51c is provided between the first conductive portion 51a and the second conductive portion 51b. The boundary between these portions may be unclear.

[0088] The first magnetic layer 11 is between the third conductive portion 51c and the first non-magnetic member 31 in the first direction D1. The first magnetic layer 11 overlaps with the third conductive portion 51c in the first direction D1. The first magnetic layer 11 does not overlap with the first conductive portion 51a and the second conductive portion 51b in the first direction D1.

[0089] The control unit 70 can supply a first current i1 between the first conductive portion 51a and the second conductive portion 51b. The first current i1 can have a direction from the first conductive portion 51a to the second conductive portion 51b or a direction from the second conductive portion 51b to the first conductive portion 51a. The control unit 70 can apply a voltage Va1 between the first conductive member 51 and the first non-magnetic member 31.

[0090] The resistance between the first conductive member 51 and the first non-magnetic member 31 can be changed (controlled) according to the direction of the first current i1 and the voltage Va1 between the first conductive member 51 and the first non-magnetic member 31. For example, when the voltage Va1 is either negative or positive, the magnetization of the first magnetic layer 11 is likely to change according to the first current i1. For example, when the voltage Va1 is the other of negative and positive, even if the first current i1 is supplied, the magnetization of the first magnetic layer 11 is difficult to change. With such a structure, the magnetization of the first magnetic layer 11 can be stably controlled. The resistance can be stably controlled.

[0091] Figure 3 is a schematic cross-sectional view illustrating the magnetic device of the first embodiment.

[0092] As Figure 3 shown, the magnetic device 111 of the embodiment includes a first element portion 10E. The first element portion 10E includes a first intermediate member 35. In addition, the structure of the magnetic device 111 can be the same as the structure of the magnetic device 110.

[0093] For example, in the magnetic device 111, the first element portion 10E includes a first magnetic layer 11, a first non-magnetic member 31, a first magnetic member 21, a first intermediate layer 15, and a first intermediate member 35. The first non-magnetic member 31 is conductive. The direction from the first magnetic layer 11 to the first non-magnetic member 31 is along the first direction D1. The first magnetic member 21 is disposed between the first magnetic layer 11 and the first non-magnetic member 31. The first intermediate layer 15 is disposed between the first magnetic layer 11 and the first magnetic member 21 and is non-magnetic. The first intermediate member 35 is disposed between the first magnetic member 21 and the first non-magnetic member 31 and is in contact with the first magnetic member 21 and the first non-magnetic member 31.

[0094] The first non-magnetic member 31 contains at least any one of a first material and a second material. The first material contains a first element and a second element. The first element contains one of a first type of element and a second type of element, and the second element contains at least one selected from the group consisting of oxygen and nitrogen. The first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second type of element contains at least one selected from the group consisting of Mg and Al. The second material contains a third element and a fourth element. The third element contains at least one selected from the group consisting of Pt, Cu, and Hf, and the fourth element contains Al.

[0095] The first intermediate member 35 contains at least any one of a first intermediate material, a second intermediate material, and a third intermediate material. The first intermediate material contains a fifth element and oxygen. The fifth element contains at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru. The second intermediate material contains a sixth element and nitrogen. The sixth element contains at least one selected from the group consisting of B, Si, Ga, and Ti. The third intermediate material contains at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf.

[0096] The first intermediate member 35 contains, for example, at least one selected from the group consisting of MgO, Al2O3, TaO, MoO3, NbO, HfO, RuO2, and Ta2O5. Thus, the first intermediate member 35 can contain an oxide. In this case, the thickness t35 of the first intermediate member 35 (refer to Figure 3 ) is, for example, 0.5 nm or less.

[0097] The first intermediate member 35 contains, for example, at least one selected from the group consisting of BN, SiN, GaN, and TiN. Thus, the first intermediate member 35 can contain a nitride. In this case, the thickness t35 of the first intermediate member 35 is, for example, 1 nm or less.

[0098] The first intermediate member 35 can include, for example, at least one selected from the group consisting of a W region, a Re region, an Os region, a Ta region, a Mo region, an Ir region, a Ru region, and an Hf region. These elements have a high melting point. These materials are difficult to mix with elements such as Co or Fe provided in the first magnetic member 21. For example, the third intermediate material relates to Co or Fe and is a non-solid solution metal.

[0099] By providing the first intermediate member 35, it is possible to suppress the movement of elements (elements contained in the first material or the second material) contained in the first non-magnetic member 31 to the first magnetic member 21. The first intermediate member 35 is, for example, a diffusion suppression layer.

[0100] By providing the first intermediate member 35, for example, the first magnetic member 21 is stabilized. It is easy to obtain stable characteristics.

[0101] When a film containing the third element and a film containing the fourth element are alternately stacked on the first intermediate member 35, the film containing the third element can be in contact with the first intermediate member 35. Compared with the third element, the fourth element (Al) is relatively easy to move (diffuse). The film containing the third element is in contact with the first intermediate member 35, whereby the movement of the fourth element can be further suppressed.

[0102] Several examples of introducing anisotropy of stress by using an insulating member provided around the first element portion 10E will be described below.

[0103] Figure 4 of (a) and Figure 4 of (b) are schematic cross-sectional views showing the magnetic device of the first embodiment.

[0104] As Figure 4 of (a) and Figure 4 of (b) show, the magnetic device 120 of the embodiment includes, in addition to the first element portion 10E, a first insulating member 41 and a second insulating member 42. Other than this, the structure of the magnetic device 120 can be the same as the structure of the magnetic device 110. In this example, the magnetic device 120 includes a first opposing insulating member 41A and a second opposing insulating member 42A.

[0105] The direction from the first insulating member 41 to the first element portion 10E is along the second direction D2. The first element portion 10E is between the first insulating member 41 and the first opposing insulating member 41A in the second direction D2. For example, the first insulating member 41 is in contact with the first conductive portion 51a. For example, the first opposing insulating member 41A is in contact with the second conductive portion 51b. The first insulating member 41 is in contact with at least a part of the first element portion 10E. The first opposing insulating member 41A is in contact with at least a part of the first element portion 10E.

[0106] As Figure 4 of (b) shows, the direction from the second insulating member 42 to the first element portion 10E is along the third direction D3. The first element portion 10E is between the second insulating member 42 and the second opposing insulating member 42A in the third direction D3. In this example, the second insulating member 42 is in contact with at least a part of the first element portion 10E. The second opposing insulating member 42A is in contact with at least a part of the first element portion 10E.

[0107] The material of the second insulating member 42 is different from the material included in the first insulating member 41. Accordingly, anisotropy of induced stress is caused. For example, anisotropic stress is applied to the first magnetic member 21. For example, the material of the second opposing insulating member 42A is different from the material included in the first opposing insulating member 41A. Accordingly, for example, anisotropic stress is applied to the first magnetic member 21.

[0108] The Young's modulus of the material of the second insulating member 42 is different from the Young's modulus of the material included in the first insulating member 41.

[0109] For example, the Young's modulus of the material of the second insulating member 42 is lower than the Young's modulus of the material included in the first insulating member 41. In this case, the magnetostriction constant of the first magnetic member 21 can be positive. For example, the lattice length of the first magnetic member 21 along the third direction D3 is longer than the lattice length of the first magnetic member 21 along the second direction D2, for example.

[0110] In other examples, the Young's modulus of the material of the second insulating member 42 is higher than the Young's modulus of the material included in the first insulating member 41. In this case, the magnetostriction constant of the first magnetic member 21 can be negative. For example, the lattice length of the first magnetic member 21 along the third direction D3 is shorter than the lattice length of the first magnetic member 21 along the second direction D2, for example.

[0111] The first insulating member 41 includes, for example, at least one selected from the group consisting of oxygen and nitrogen and at least one selected from the group consisting of silicon and aluminum. The second insulating member 42 includes, for example, carbon. The second insulating member 42 can include, for example, carbon, at least one selected from the group consisting of oxygen and nitrogen, and at least one selected from the group consisting of silicon and aluminum. The first insulating member 41 is substantially free of carbon, for example. Alternatively, the concentration of carbon included in the first insulating member 41 is lower than the concentration of carbon included in the second insulating member 42.

[0112] The material of the first opposing insulating member 41A can be the same as the material of the first insulating member 41. The material of the second opposing insulating member 42A can be the same as the material of the second insulating member 42.

[0113] Figure 5 of (a) and Figure 5 of (b) are schematic cross-sectional views illustrating the magnetic device of the first embodiment.

[0114] As Figure 5 of (a) and Figure 5 of (b) show, the magnetic device 121 of the embodiment further includes the first insulating member 41 and the second insulating member 42 in addition to the first element portion 10E. Other than this, the structure of the magnetic device 121 can be the same as the structure of the magnetic device 111.

[0115] In the magnetic device 121, the direction from the first insulating member 41 to the first element portion 10E is along the second direction D2. The first insulating member 41 is in contact with at least a part of the first element portion 10E. The direction from the second insulating member 42 to the first element portion 10E is along the third direction D3.

[0116] In the magnetic device 121, a gap 42g is provided between the second insulating member 42 and the first element portion 10E. With such first insulating member 41 and second insulating member 42 (gap 42g), anisotropy of stress is induced thereby. For example, anisotropic stress is applied to the first magnetic member 21.

[0117] For example, the first element portion 10E can be provided between the first insulating member 41 and the first opposing insulating member 41A in the second direction D2. The first opposing insulating member 41A is in contact with the first element portion 10E. The first element portion 10E can be provided between the second insulating member 42 and the second opposing insulating member 42A in the third direction D3. A gap 42Ag is provided between the first element portion 10E and the second opposing insulating member 42A. Anisotropy of stress is induced. For example, anisotropic stress is applied to the first magnetic member 21.

[0118] In the magnetic device 121, for example, the magnetostriction constant of the first magnetic member 21 can be positive. For example, the lattice length of the first magnetic member 21 along the third direction D3 is longer than the lattice length of the first magnetic member 21 along the second direction D2.

[0119] In the embodiment, when the magnetostriction constant of the first magnetic member 21 is negative, a gap can be provided between the first insulating member 41 and the first element portion 10E. For example, the lattice length of the first magnetic member 21 along the third direction D3 is shorter than the lattice length of the first magnetic member 21 along the second direction D2.

[0120] Figure 6 of (a) and Figure 6 of (b) are schematic cross-sectional views illustrating the magnetic device of the first embodiment.

[0121] As Figure 6 of (a) and Figure 6 of (b) show, the magnetic device 122 of the embodiment further includes a first insulating member 41 and a second insulating member 42 in addition to the first element portion 10E. Other than this, the structure of the magnetic device 122 can be the same as the structure of the magnetic device 111. For example, the first element portion 10E includes a first intermediate member 35. The material of the second insulating member 42 is different from the material of the first insulating member 41.

[0122] Figure 7 of (a) and Figure 7The schematic cross-sectional view of the magnetic device according to the first embodiment is shown in (b).

[0123] As Figure 7 shown in (a) of Figure 7 and (b) of

[0124] In the magnetic devices 122 and 123, the anisotropy of the induced stress is generated. For example, anisotropic stress is applied to the first magnetic member 21.

[0125] (The second embodiment)

[0126] Figure 8 The schematic cross-sectional view of the magnetic device according to the second embodiment is shown in

[0127] As Figure 8 shown, the magnetic device 130 of the embodiment includes, in addition to the first element portion 10E, a second non-magnetic member 32. Except for this, the structure of the magnetic device 130 can be the same as that of the magnetic device 110.

[0128] The first magnetic layer 11 is located between the second non-magnetic member 32 and at least a part of the first conductive member 51 in the first direction D1. The second non-magnetic member 32 may be in contact with the first conductive member 51. The second non-magnetic member 32 includes at least any one of the third material and the fourth material. The third material includes at least one of the third element and the fourth element and at least one selected from the group consisting of oxygen and nitrogen. The third element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The fourth element includes at least one selected from the group consisting of Mg and Al. The fourth material includes at least one selected from the group consisting of Pt, Cu, and Hf and Al.

[0129] The second non-magnetic member 32 can apply stress to the first conductive member 51 and the first element portion 10E, for example. The second non-magnetic member 32 can be conductive or non-conductive. By using the second non-magnetic member 32, a magnetic device that can operate more stably can be provided. The second non-magnetic member 32 can be applied to any of the magnetic devices described in the first embodiment.

[0130] (The third embodiment)

[0131] Figure 9 Schematic cross-sectional view showing the magnetic device of the third embodiment.

[0132] As Figure 9 shown, the magnetic device 140 of the embodiment includes a plurality of first element portions 10E. The magnetic device 140 can be used as a storage circuit, for example. The magnetic device 120 can be used as a logic circuit, for example. The number of the plurality of first element portions 10E is arbitrary.

[0133] For example, the first conductive member 51 may further include a fourth conductive portion 51d and a fifth conductive portion 51e. There is a second conductive portion 51b between the first conductive portion 51a and the fourth conductive portion 51d. There is a fifth conductive portion 51e between the second conductive portion 51b and the fourth conductive portion 51d. One of the plurality of first element portions 10E is provided on the third conductive portion 51c. Another one of the plurality of first element portions 10E is provided on the fifth conductive portion 51e.

[0134] The structure of the magnetic device 140 can be applied to any magnetic device of the first embodiment or the second embodiment.

[0135] The embodiment may include the following structure.

[0136] (Structure 1) A magnetic device including a first element portion

[0137] The first element portion includes:

[0138] A first magnetic layer;

[0139] A conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction;

[0140] A first magnetic member provided between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; and

[0141] A non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member,

[0142] wherein the first non-magnetic member contains at least any one of a first material and a second material,

[0143] The first material contains a first element and a second element, the first element contains one of a first type of element and a second type of element, and the second element contains at least one selected from the group consisting of oxygen and nitrogen,

[0144] The first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn,

[0145] The second element includes at least one selected from the group consisting of Mg and Al.

[0146] The second material includes a third element and a fourth element. The third element includes at least one selected from the group consisting of Pt, Cu, and Hf. The fourth element includes Al.

[0147] (Structure 2) A magnetic device includes a first element portion.

[0148] The first element portion includes:

[0149] A first magnetic layer;

[0150] A conductive first non-magnetic member, and the direction from the first magnetic layer to the first non-magnetic member is along a first direction;

[0151] A first magnetic member disposed between the first magnetic layer and the first non-magnetic member;

[0152] A non-magnetic first intermediate layer disposed between the first magnetic layer and the first magnetic member; and

[0153] A first intermediate member disposed between the first magnetic member and the first non-magnetic member and in contact with the first magnetic member and the first non-magnetic member.

[0154] Wherein, the first non-magnetic member includes at least any one of a first material and a second material.

[0155] The first material includes a first element and a second element. The first element includes one of a first type of element and a second type of element. The second element includes at least one selected from the group consisting of oxygen and nitrogen.

[0156] The first type of element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn.

[0157] The second type of element includes at least one selected from the group consisting of Mg and Al.

[0158] The second material includes a third element and a fourth element. The third element includes at least one selected from the group consisting of Pt, Cu, and Hf. The fourth element includes Al.

[0159] The first intermediate member includes at least any one of a first intermediate material, a second intermediate material, and a third intermediate material.

[0160] The first intermediate material contains a fifth element and oxygen, and the fifth element contains at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru.

[0161] The second intermediate material contains a sixth element and nitrogen, and the sixth element contains at least one selected from the group consisting of B, Si, Ga, and Ti.

[0162] The third intermediate material contains at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf.

[0163] (Structure 3) The magnetic device according to Structure 1 or 2, further comprising a first conductive member.

[0164] The first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion.

[0165] The third conductive portion is disposed between the first conductive portion and the second conductive portion in a second direction intersecting the first direction.

[0166] The first magnetic layer is between the third conductive portion and the first non-magnetic member in the first direction.

[0167] The first conductive member contains at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0168] (Structure 4) The magnetic device according to Structure 3, further comprising a first insulating member and a second insulating member.

[0169] The direction from the first insulating member to the first element portion is along the second direction.

[0170] The first insulating member is in contact with at least a part of the first element portion.

[0171] The direction from the second insulating member to the first element portion is along a third direction including the first direction and the second direction.

[0172] The second insulating member is in contact with at least a part of the first element portion.

[0173] The material of the second insulating member is different from the material contained in the first insulating member.

[0174] (Structure 5) The magnetic device according to Structure 4, wherein

[0175] The Young's modulus of the material of the second insulating member is different from the Young's modulus of the material included in the first insulating member.

[0176] (Structure 6) The magnetic device according to Structure 3, wherein

[0177] it further includes a first insulating member and a second insulating member,

[0178] the direction from the first insulating member to the first element portion is along the second direction,

[0179] the first insulating member is in contact with at least a part of the first element portion,

[0180] the direction from the second insulating member to the first element portion is along a third direction including the first direction and the second direction,

[0181] a gap is provided between the second insulating member and the first element portion.

[0182] (Structure 7) The magnetic device according to Structure 5, wherein

[0183] the magnetostrictive constant of the first magnetic member is positive,

[0184] the Young's modulus of the material of the second insulating member is lower than the Young's modulus of the material included in the first insulating member.

[0185] (Structure 8) The magnetic device according to Structure 7, wherein

[0186] the magnetostrictive constant of the first magnetic member is positive.

[0187] (Structure 9) The magnetic device according to Structure 1 or 2, wherein

[0188] the length of the first non-magnetic member along the third direction is longer than the length of the first non-magnetic member along the second direction,

[0189] the second direction intersects the first direction,

[0190] the third direction intersects the plane including the first direction and the second direction.

[0191] (Structure 10) The magnetic device according to Structure 9, wherein it further includes a first conductive member,

[0192] the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion,

[0193] the third conductive portion is disposed between the first conductive portion and the second conductive portion in the second direction,

[0194] The first magnetic layer is between the third conductive portion and the first non-magnetic member in the first direction.

[0195] The first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0196] (Structure 11) The magnetic device according to Structure 9 or 10, wherein

[0197] The magnetostrictive constant of the first magnetic member is positive.

[0198] (Structure 12) The magnetic device according to any one of Structures 4 to 11, wherein

[0199] The third-direction lattice length of at least a part of the first magnetic member along the third direction is longer than the second-direction lattice length of at least a part of the first magnetic member along the second direction.

[0200] (Structure 13) The magnetic device according to any one of Structures 1 to 12, wherein

[0201] The first magnetic member includes a plurality of first magnetic films and a plurality of first non-magnetic films.

[0202] In the first direction, one first non-magnetic film among the plurality of first non-magnetic films is between one first magnetic film and another first magnetic film among the plurality of first magnetic films.

[0203] (Structure 14) The magnetic device according to Structure 13, wherein

[0204] The first magnetic member satisfies the first condition or the second condition.

[0205] Under the first condition, the one first non-magnetic film among the plurality of first non-magnetic films contains Ru, and the thickness of the one first non-magnetic film among the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less.

[0206] Under the second condition, the one first non-magnetic film among the plurality of first non-magnetic films contains Ir, and the thickness of the one first non-magnetic film among the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less.

[0207] (Structure 15) The magnetic device according to any one of Structures 1 to 14, wherein

[0208] The first non-magnetic member includes a first non-magnetic portion including a first surface and a second non-magnetic portion including a second surface,

[0209] The first surface is between the first magnetic member and the second surface in the first direction,

[0210] The absolute value of the difference between the first concentration of the second element in the first non-magnetic portion and the second concentration of the second element in the second non-magnetic portion and the first ratio of the first concentration is 0.2 or less.

[0211] (Structure 16) The magnetic device according to any one of Structures 1 to 15, wherein,

[0212] The first magnetic member includes a first position and a second position,

[0213] The second position is between the first position and the first non-magnetic member,

[0214] The concentration of the second element at the second position is higher than the concentration of the second element at the first position, or oxygen is not contained at the first position.

[0215] (Structure 17) The magnetic device according to any one of Structures 3 to 8, further comprising a control unit,

[0216] The control unit can supply a first current between the first conductive portion and the second conductive portion,

[0217] The resistance between the first conductive member and the first non-magnetic member can vary depending on the direction of the first current and the voltage between the first conductive member and the first non-magnetic member.

[0218] (Structure 18) The magnetic device according to any one of Structures 3 to 8, wherein,

[0219] The first magnetic member includes a first position and a second position,

[0220] The second position is between the first position and the first non-magnetic member,

[0221] The first position lattice length along the cross direction intersecting the first direction at the first position is different from the second position lattice length along the cross direction at the second position.

[0222] (Structure 19) The magnetic device according to Structure 18, wherein,

[0223] The second position lattice length is longer than the first position lattice length.

[0224] (Structure 20) The magnetic device according to any one of Structures 3 to 8, wherein,

[0225] It further includes a second non-magnetic member,

[0226] The first magnetic layer is between the second non-magnetic member and at least a part of the first conductive member in the first direction,

[0227] The second non-magnetic member is in contact with the first conductive member,

[0228] The second non-magnetic member contains at least any one of a third material and a fourth material,

[0229] The third material contains one of a third element and a fourth element and at least one selected from the group consisting of oxygen and nitrogen,

[0230] The third element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn,

[0231] The fourth element contains at least one selected from the group consisting of Mg and Al,

[0232] The fourth material contains at least one selected from the group consisting of Pt, Cu, and Hf and Al.

[0233] According to the embodiment, a magnetic device that can operate stably can be provided.

[0234] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific structures of each element such as the element part, magnetic layer, non-magnetic member, magnetic member, intermediate layer, intermediate member, conductive member, and insulating member included in the magnetic device, as long as those skilled in the art can similarly implement the present invention by appropriately selecting from the known range and obtain the same effects, they are included in the scope of the present invention.

[0235] In addition, within the technically possible range, any two or more elements of the specific examples are combined, as long as the gist of the present invention is included, they are also included in the scope of the present invention.

[0236] Furthermore, as long as the gist of the present invention is included, all magnetic devices that can be implemented by those skilled in the art by appropriately changing the design based on the magnetic device described as the embodiment of the present invention also belong to the scope of the present invention.

[0237] In addition, it should be understood that within the thinking scope of the present invention, those skilled in the art can think of various variation examples and correction examples, and these variation examples and correction examples also belong to the scope of the present invention.

Claims

1. A magnetic device includes a first element portion, wherein the first element portion includes: a first magnetic layer; a conductive first non-magnetic member, and the direction from the first magnetic layer to the first non-magnetic member is along a first direction; a first magnetic member disposed between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; and a non-magnetic first intermediate layer disposed between the first magnetic layer and the first magnetic member, wherein the first non-magnetic member contains at least any one of a first material and a second material, the first material contains a first element and a second element, the first element contains one of a first type of element and a second type of element, and the second element contains at least one selected from the group consisting of oxygen and nitrogen, the first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn, the second type of element contains at least one selected from the group consisting of Mg and Al, the second material contains a third element and a fourth element, the third element contains at least one selected from the group consisting of Pt, Cu, and Hf, and the fourth element contains Al.

2. A magnetic device includes a first element portion, wherein the first element portion includes: a first magnetic layer; a conductive first non-magnetic member, and the direction from the first magnetic layer to the first non-magnetic member is along a first direction; a first magnetic member disposed between the first magnetic layer and the first non-magnetic member; a non-magnetic first intermediate layer disposed between the first magnetic layer and the first magnetic member; and a first intermediate member disposed between the first magnetic member and the first non-magnetic member and in contact with the first magnetic member and the first non-magnetic member, wherein the first non-magnetic member contains at least any one of a first material and a second material, the first material contains a first element and a second element, the first element contains one of a first type of element and a second type of element, and the second element contains at least one selected from the group consisting of oxygen and nitrogen, the first type of element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn, the second type of element contains at least one selected from the group consisting of Mg and Al, the second material contains a third element and a fourth element, the third element contains at least one selected from the group consisting of Pt, Cu, and Hf, and the fourth element contains Al, the first intermediate member contains at least any one of a first intermediate material, a second intermediate material, and a third intermediate material, the first intermediate material contains a fifth element and oxygen, and the fifth element contains at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru, the second intermediate material contains a sixth element and nitrogen, and the sixth element contains at least one selected from the group consisting of B, Si, Ga, and Ti, The 3rd intermediate material includes at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf.

3. The magnetic device according to claim 1, wherein, A 1st conductive member is further provided. The 1st conductive member includes a 1st conductive portion, a 2nd conductive portion, and a 3rd conductive portion. The 3rd conductive portion is disposed between the 1st conductive portion and the 2nd conductive portion in a 2nd direction intersecting the 1st direction. The 1st magnetic layer is located between the 3rd conductive portion and the 1st non-magnetic member in the 1st direction. The 1st conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

4. The magnetic device according to claim 3, wherein a 1st insulating member and a 2nd insulating member are further provided. The direction from the 1st insulating member to the 1st element portion is along the 2nd direction. The 1st insulating member is in contact with at least a part of the 1st element portion. The direction from the 2nd insulating member to the 1st element portion is along a 3rd direction including the 1st direction and the 2nd direction. The 2nd insulating member is in contact with at least a part of the 1st element portion. The material of the 2nd insulating member is different from the material included in the 1st insulating member.

5. The magnetic device according to claim 4, wherein The Young's modulus of the material of the 2nd insulating member is different from the Young's modulus of the material included in the 1st insulating member.

6. The magnetic device according to claim 3, wherein a 1st insulating member and a 2nd insulating member are further provided. The direction from the 1st insulating member to the 1st element portion is along the 2nd direction. The 1st insulating member is in contact with at least a part of the 1st element portion. The direction from the 2nd insulating member to the 1st element portion is along a 3rd direction including the 1st direction and the 2nd direction. A gap is provided between the 2nd insulating member and the 1st element portion.

7. The magnetic device according to claim 5, wherein The magnetostrictive constant of the 1st magnetic member is positive. The Young's modulus of the material of the 2nd insulating member is lower than the Young's modulus of the material included in the 1st insulating member.

8. The magnetic device according to claim 7, wherein The magnetostrictive constant of the 1st magnetic member is positive.

9. The magnetic device according to claim 1, wherein The length of the 1st non-magnetic member along the 3rd direction is longer than the length of the 1st non-magnetic member along the 2nd direction. The 2nd direction intersects the 1st direction. The 3rd direction intersects the plane including the 1st direction and the 2nd direction.

10. The magnetic device according to claim 9, wherein a 1st conductive member is further provided. The 1st conductive member includes a 1st conductive portion, a 2nd conductive portion, and a 3rd conductive portion. The 3rd conductive portion is disposed between the 1st conductive portion and the 2nd conductive portion in the 2nd direction. The 1st magnetic layer is located between the 3rd conductive portion and the 1st non-magnetic member in the 1st direction. The first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

11. The magnetic device according to claim 9, wherein, The magnetostriction constant of the first magnetic member is positive.

12. The magnetic device according to claim 4, wherein, The third-direction lattice length of at least a part of the first magnetic member along the third direction is longer than the second-direction lattice length of at least a part of the first magnetic member along the second direction.

13. The magnetic device according to claim 1, wherein, The first magnetic member includes a plurality of first magnetic films and a plurality of first non-magnetic films, In the first direction, one first non-magnetic film among the plurality of first non-magnetic films is between one first magnetic film and another first magnetic film among the plurality of first magnetic films.

14. The magnetic device according to claim 13, wherein, The first magnetic member satisfies the first condition or the second condition, Under the first condition, the one first non-magnetic film among the plurality of first non-magnetic films contains Ru, and the thickness of the one first non-magnetic film among the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less, Under the second condition, the one first non-magnetic film among the plurality of first non-magnetic films contains Ir, and the thickness of the one first non-magnetic film among the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less.

15. The magnetic device according to claim 1, wherein, The first non-magnetic member includes a first non-magnetic part including a first surface and a second non-magnetic part including a second surface, The first surface is between the first magnetic member and the second surface in the first direction, The absolute value of the difference between the first concentration of the second element in the first non-magnetic part and the second concentration of the second element in the second non-magnetic part and the first ratio of the first concentration is 0.2 or less.

16. The magnetic device according to claim 1, wherein, The first magnetic member includes a first position and a second position, The second position is between the first position and the first non-magnetic member, The concentration of the second element at the second position is higher than the concentration of the second element at the first position, or the first position does not contain oxygen.

17. The magnetic device according to claim 3, wherein, A control unit is further provided, The control unit can supply a first current between the first conductive part and the second conductive part, The resistance between the first conductive member and the first non-magnetic member can vary depending on the direction of the first current and the voltage between the first conductive member and the first non-magnetic member.

18. The magnetic device according to claim 3, wherein, The first magnetic member includes a first position and a second position, The second position is between the first position and the first non-magnetic member, The first-position lattice length in the crossing direction that crosses the first direction at the first position is different from the second-position lattice length in the crossing direction at the second position.

19. The magnetic device according to claim 18, wherein the second-position lattice length is longer than the first-position lattice length.

20. The magnetic device according to claim 3, wherein a second non-magnetic member is further provided, the first magnetic layer is between the second non-magnetic member and at least a part of the first conductive member in the first direction, the second non-magnetic member is in contact with the first conductive member, the second non-magnetic member contains at least any one of a third material and a fourth material, the third material contains one of a third element and a fourth element and at least one selected from the group consisting of oxygen and nitrogen, the third element contains at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn, the fourth element contains at least one selected from the group consisting of Mg and Al, the fourth material contains at least one selected from the group consisting of Pt, Cu, and Hf and Al.

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