Semiconductor moire superlattice material and method of making same
The preparation of ZnIn2S4 moiré superlattice material by low-temperature solvothermal method solves the problems of uncontrolled stacking and interface contamination in the prior art, realizes the uniformity and reproducibility of ZnIn2S4 moiré superlattice material, and expands its application potential in the optoelectronic field.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANJING UNIV OF POSTS & TELECOMM
- Filing Date
- 2025-04-08
- Publication Date
- 2026-06-09
AI Technical Summary
Existing technologies struggle to effectively synthesize ZnIn2S4 moiré superlattice materials, with issues such as uncontrolled stacking methods, easy interface contamination, and high preparation costs, which limit their development in optoelectronic properties and applications.
ZnIn2S4 moiré superlattice material was synthesized by a low-temperature solvothermal method. Bulk ZnIn2S4 was prepared by a low-temperature reflux method, ultrasonically dispersed into monolayer nanosheets, and regular moiré rotation angles were formed by orientation freezing technology. ZnIn2S4 moiré superlattice material was obtained by freeze drying.
A ZnIn2S4 moiré superlattice material with a regular moiré rotation angle was successfully synthesized, overcoming the shortcomings of traditional methods. It exhibits good uniformity and reproducibility and is suitable for applications such as photocatalysis, photoelectric detection, and hydroelectric power generation.
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Figure CN120288819B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor nanomaterials technology, and more specifically, to ZnIn2S4 moiré superlattice material and a universal preparation method thereof. Background Technology
[0002] In recent years, the rapid development of "twisted electronics" has spurred the exploration of the superior properties of twisted two-dimensional layered materials. Vertically stacking two-dimensional materials with angular deviations or lattice mismatches can produce in-plane periodic structures, known as moiré superlattices. Periodic moiré superlattices can optimize band structures, resulting in numerous phenomena, including moiré phonons, moiré excitons, magnetism, topological edge states, unconventional superconductivity, and Mott insulation. Moiré superlattice materials have broad application prospects in electronics, optoelectronics, valley electronics, photonics, spintronics, and electrocatalysis.
[0003] Several typical two-dimensional moiré superlattice materials have been widely reported, such as graphene, transition metal binary chalcogenides, hexagonal boron nitride, graphitic carbon nitride, and bismuth oxychloride. However, moiré superlattice materials for most two-dimensional materials remain undiscovered. Indium zinc thiosulfate (ZnIn₂S₄) is a two-dimensional semiconductor material with a layered structure and narrow bandgap, exhibiting visible light response near 570 nm. It is also characterized by low toxicity, chemical stability, and abundant availability, and has been widely reported in photocatalysis and photodetection. However, its insufficient intrinsic carrier separation efficiency has limited breakthroughs in its photoelectric performance. Constructing moiré superlattice structures holds promise for further enhancing the photoelectric performance of ZnIn₂S₄. Unfortunately, ZnIn₂S₄ moiré superlattice structures have yet to be discovered. Therefore, it is urgent to explore synthetic methods for ZnIn₂S₄ moiré superlattice materials to achieve breakthroughs in their photoelectric performance and further expand their application potential in the optoelectronic field.
[0004] Currently, the synthesis methods for moiré superlattice materials mainly rely on mechanical exfoliation and epitaxial growth techniques. Mechanical exfoliation results in uncontrolled stacking of moiré superlattice materials, limiting sample uniformity and size, and posing a risk of interface contamination. While epitaxial growth can address these issues better, its high preparation cost restricts the large-scale preparation of moiré superlattice materials. This invention discloses a simple, uniform, and reproducible solvothermal method for the successful synthesis of ZnIn2S4 moiré superlattice materials. Summary of the Invention
[0005] To address the problems mentioned in the background section, this invention provides a low-temperature, convenient solvothermal synthesis method for preparing a ZnIn₂S₄ moiré superlattice material (ZnIn₂S₄-MSL), elucidates the formation mechanism of the ZnIn₂S₄ moiré superlattice material, and fills a gap in the ZnIn₂S₄ moiré superlattice material field. The ZnIn₂S₄ moiré superlattice material synthesized by this method exhibits a regular moiré rotation angle, good uniformity and reproducibility, and has potential applications in photocatalysis, photoelectric detection, hydroelectric power generation, and photovoltaic power generation.
[0006] To achieve the above objectives, the present invention provides the following technical solution:
[0007] This invention provides a method for preparing a semiconductor moiré superlattice material, comprising the following steps:
[0008] Step 1: Synthesize bulk ZnIn2S4 by low-temperature reflux method;
[0009] Step 2: Redisperse the block ZnIn2S4 in deionized water and sonicate it for 3-4 hours using an ultrasonic disperser to obtain a single-layer ZnIn2S4 nanosheet dispersion.
[0010] Step 3: The specific steps for obtaining ZnIn2S4 moiré superlattice material by orientation freezing technology are as follows: pour the dispersion into a petri dish and pre-freeze it in a refrigerator at -20℃ for 3 hours, and then freeze-dry it for 36 to 48 hours to obtain orange-yellow powder ZnIn2S4 moiré superlattice material.
[0011] Furthermore, in step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:
[0012] Step 1-1: Add deionized water to Zn(CH3COO)2·2H2O and InCl3·4H2O and stir to dissolve; then add thioacetamide (TAA) and stir until completely dissolved;
[0013] Step 1-2: Slowly heat the solution obtained in step 1-1 through an oil bath and continue the reaction. During the reaction, continuously stir with a magnetic force and use a straight condenser to reflux until the solution turns orange-yellow. Stop heating and let the solution cool to room temperature in a three-necked flask.
[0014] Steps 1-3: After cooling, wash the solution with deionized water 3-5 times. After the product settles, pour off the supernatant and then separate the product by vacuum filtration. The obtained product is blocky ZnIn2S4.
[0015] Furthermore, in step 2, the molar ratio of block ZnIn2S4 to deionized water is 1:2000 to 1:3000.
[0016] Furthermore, in step 2, the ultrasonic power of the ultrasonic disperser is 500-700W, and after ultrasonication, a single-layer ZnIn2S4 nanosheet dispersion with obvious Tyndall effect is obtained.
[0017] Furthermore, in step 3, the freeze-drying temperature range is -60 to -50°C.
[0018] Furthermore, in step 3, the formation mechanism of ZnIn2S4 moiré superlattice material obtained by orientation freezing technology is as follows: during the ultrasonic step, the monolayer ZnIn2S4 nanosheets generate random rotation angles, and then during freeze drying, due to the combined effect of the decrease in degree of freedom and spontaneous curvature, the minimum rotation angle reaches the lowest energy state.
[0019] Further, in step 1-1, the molar ratio of Zn(CH3COO)2·2H2O, InCl3·4H2O, and thioacetamide is 3:6:16, and the molar ratio of Zn(CH3COO)2·2H2O to deionized water is 3:400~600mmol / mL.
[0020] Furthermore, in steps 1-2, the reaction temperature is 90-105°C, the two necks of the three-necked flask are sealed with rubber stoppers, and the middle neck is connected to a spherical condenser for condensation and reflux.
[0021] Furthermore, in steps 1-3, the obtained bulk ZnIn2S4 is composed of 3 to 6 layers of monolayer ZnIn2S4 nanosheets stacked together.
[0022] The present invention also provides a semiconductor moiré superlattice material prepared by the preparation method described above.
[0023] Furthermore, the prepared semiconductor moiré superlattice material exhibits significant spontaneous curvature, with a lateral dimension of approximately 400–600 nm.
[0024] Furthermore, the prepared semiconductor moiré superlattice material has a bilayer moiré superlattice with specific rotation angles of 12° (±2°) and 24° (±2°), and a trilayer moiré superlattice with a rotation angle of 12° (±2°) for each adjacent two layers, and the moiré superlattice material has good uniformity.
[0025] The present invention also provides the application of the above-described semiconductor moiré superlattice material in photocatalytic materials, photoelectric detection, hydrovoltaic power generation or photovoltaic power generation materials.
[0026] Compared with the prior art, the beneficial effects of the present invention are:
[0027] The preparation method of this invention is simple to operate and has good reproducibility, successfully synthesizing ZnIn2S4 moiré superlattice material. Compared with traditional mechanical exfoliation methods and epitaxial growth techniques, this invention effectively solves the problems of limited stacking methods, easy interface contamination, and high preparation costs, and has good potential for industrial applications. Attached Figure Description
[0028] Figure 1 This is a flowchart illustrating the preparation process of the Mohr superlattice in Example 1;
[0029] Figure 2 Field emission scanning electron microscope (FESEM) image of the bulk ZnIn2S4 sample prepared in Example 1;
[0030] Figure 3 denoted as the theoretical thickness of the multilayer ZnIn2S4 material; af represents the theoretical thickness of multilayer bulk ZnIn2S4 materials consisting of single-layer, double-layer, triple-layer, quadruple-layer, quintuple-layer, and six-layer nanosheets, respectively.
[0031] Figure 4 The statistical regularity of the number of layers in the blocky ZnIn2S4 sample prepared in Example 1;
[0032] Figure 5 The images show TEM images and corresponding Fourier transform (FFT) images of the monolayer ZnIn2S4 sample prepared in Example 1.
[0033] Figure 6 TEM image of the ZnIn2S4-MSL sample;
[0034] Figure 7 The following are characterizations of the bilayer moiré superlattice region with an approximately 12° rotation angle in the ZnIn2S4-MSL sample prepared in Example 1: a) HRTEM image of the ZnIn2S4-MSL material with an approximately 12° rotation angle; b) Model diagram of the ZnIn2S4-MSL material with an approximately 12° rotation angle; c) FFT image corresponding to Figure a; d, e) Inverse Fourier Transform (IFFT) images corresponding to the FFT images in Figure c; f) Filtered FFT image corresponding to Figure c; g, h) Filtered FFT images corresponding to the IFFT images in d, e. xy Image of directional stress distribution;
[0035] Figure 8The following are characterizations of the bilayer moiré superlattice region with an approximately 24° rotation angle in the ZnIn2S4-MSL sample prepared in Example 1: a) HRTEM image of the ZnIn2S4-MSL material with an approximately 24° rotation angle; b) Model diagram of the ZnIn2S4-MSL material with an approximately 24° rotation angle; c) FFT image corresponding to Figure a; d, e) Inverse Fourier Transform (IFFT) images corresponding to the FFT images in Figure c; f) Filtered FFT image corresponding to Figure c; g, h) Filtered FFT images corresponding to the IFFT images in d, e. xy Image of directional stress distribution;
[0036] Figure 9 The following are a series of characterizations of the three-layer moiré superlattice regions with an approximately 12° rotation angle between adjacent layers in the ZnIn2S4-MSL sample prepared in Example 1: a, HRTEM image of the ZnIn2S4-MSL material with an approximately 12° rotation angle between adjacent layers; b, FFT image corresponding to Figure a; c, filtered FFT image corresponding to Figure b; d, model diagram of the ZnIn2S4-MSL material with an approximately 12° rotation angle between adjacent layers; e-g, FFT and IFFT images corresponding to the lattice points in Figure b.
[0037] Figure 10 The images are HRTEM images of 12 randomly selected regions from the ZnIn2S4-MSL sample prepared in Example 1. Detailed Implementation
[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0039] Example 1
[0040] Raw materials: Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium trichloride tetrahydrate (InCl3·4H2O), deionized water, and thioacetamide (TAA).
[0041] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:
[0042] Step 1-1: Add 3 mmol Zn(CH3COO)2·2H2O and 6 mmol InCl3·4H2O to a three-necked flask, and add 500 mL of deionized water. Stir with a constant temperature magnetic stirrer until the drug is completely dissolved. Then, add 16 mmol thioacetamide (TAA) and stir with a constant temperature magnetic stirrer until the drug is completely dissolved.
[0043] Steps 1-2: Slowly heat the solution to 94-96°C using an oil bath. At this temperature, continue magnetic stirring and reflux using a straight condenser until the solution turns orange-yellow. Stop heating and allow the solution to cool to room temperature in a three-necked flask.
[0044] Steps 1-3: After cooling, pour the solution into a beaker and wash it 3-5 times with deionized water. After the product settles, pour out the supernatant and then separate the product by vacuum filtration. The obtained product is block ZnIn2S4.
[0045] Step 2: The bulk ZnIn2S4 was redispersed in deionized water at a molar ratio of 1:2000 and ultrasonicated at 550W for 3 hours to obtain a single-layer ZnIn2S4 nanosheet dispersion with obvious Tyndall effect.
[0046] Step 3: Pour the dispersion into a petri dish and pre-freeze it in a -20°C refrigerator for 3 hours, then freeze-dry it at -60°C for 48 hours. The resulting orange-yellow powder is the ZnIn2S4 moiré superlattice material.
[0047] The accompanying drawings illustrate a series of characterization results for the ZnIn2S4-MSL sample obtained in Example 1, as well as the bulk ZnIn2S4 sample and monolayer ZnIn2S4 sample obtained during the process, and elaborate on the formation mechanism of the ZnIn2S4 moiré superlattice structure. To demonstrate that the technical solution of this invention can be implemented, the invention will be further described below in conjunction with the accompanying drawings.
[0048] Figure 1 This is a flowchart illustrating the preparation of ZnIn2S4 moiré superlattice (ZnIn2S4-MSL) material. The preparation process sequentially yields bulk ZnIn2S4 samples, monolayer ZnIn2S4 samples, and ZnIn2S4-MSL samples. First, a bulk ZnIn2S4 sample is obtained through step 3 in Example 1. Figure 2 The image shows a SEM image of a bulk ZnIn2S4 sample, demonstrating that the bulk ZnIn2S4 is composed of stacked ZnIn2S4 nanosheets. Figure 3 Given the theoretical thickness of ZnIn2S4 with different numbers of layers, the theoretical number of stacked layers of blocky ZnIn2S4 can be calculated from this. Figure 3 The provided theoretical thickness yields Figure 4Statistical analysis of the number of layers in the bulk ZnIn2S4 samples revealed that the number of stacked ZnIn2S4 layers ranged from 3 to 6. Figure 5 TEM images of a monolayer ZnIn2S4 sample demonstrate that ultrasound successfully dispersed the bulk ZnIn2S4 into a monolayer.
[0049] ZnIn2S4-MSL samples were obtained by implementing step 3 in Case 1. Figure 6 The image shows a TEM image of a ZnIn2S4-MSL sample, which indicates that the size of the ZnIn2S4-MSL sample is 400–600 nm. Figure 7 A series of characterizations were performed on the bilayer moiré superlattice region with a rotation angle of approximately 12° in the prepared ZnIn2S4-MSL sample. Figure 7 Image a is an HRTEM image of the double-layered moiré superlattice region, where the honeycomb moiré pattern can be clearly observed. Figure 7 b represents the atomic structure model of ZnIn2S4 with an introduced rotation angle of 12°, and the resulting moiré pattern is highly consistent with the HRTEM electron microscope image. Figure 7 c is the FFT image corresponding to the HRTEM image of the double-layer moiré superlattice region, which contains 12 {102} points, forming two hexagons (two sets of six-fold symmetric diffraction points). Figure 7 Images d and e are obtained by performing IFFT transformations on the two hexagons numbered 1 and 2, respectively. It is evident that there is a clear angle between the lattice fringes of the two sets of spots. Figure 7 f is the rotation angle measured based on the two sets of spots separated in the FFT image, which is 12.15°. Figure 7 g and h are respectively for... Figure 7 The geometric phase analysis results of c and d show that there is a significant stress distribution in the xy direction of the double-layer moiré superlattice region. Figure 8 A series of characterizations were performed on the bilayer moiré superlattice region with a rotation angle of approximately 24° in the prepared ZnIn2S4-MSL sample. The results are consistent with... Figure 7 Similarly, this method can also be used to synthesize bilayer ZnIn2S4-MSL samples with a rotation angle of approximately 24°. Figure 9 A series of characterizations were performed on the three-layer moiré superlattice regions with an interlayer rotation angle of approximately 12° in the prepared ZnIn2S4-MSL sample. This demonstrates that the same method can be used to synthesize three-layer ZnIn2S4-MSL samples with an interlayer rotation angle of approximately 12° between adjacent layers. Figure 10 HRTEM images of 12 randomly selected regions in the prepared ZnIn2S4-MSL sample show that the rotation angle of the moiré superlattice in the prepared ZnIn2S4-MSL sample is about 12° or 24°, which shows good uniformity and reproducibility.
[0050] The formation mechanism of the moiré superlattice in the ZnIn2S4-MSL sample: During the pre-freezing process, due to the concentration effect and interface effect, ZnIn2S4 nanoparticles gradually assemble and aggregate, forming macroscopic self-assembled bodies that are uniformly distributed in the ice. Due to the stress and torque during the transition from the aqueous phase to the ice phase, angles are generated between the monolayer ZnIn2S4 nanosheets. Furthermore, the low degree of freedom in ice makes it difficult to transform into a perfectly stacked bilayer morphology; instead, they can only reach the lowest energy state with a certain rotation angle, thus achieving stability. This angle persists during freeze-drying, thus forming the ZnIn2S4 moiré superlattice material.
[0051] Example 2
[0052] Raw materials: Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium trichloride tetrahydrate (InCl3·4H2O), deionized water, and thioacetamide (TAA).
[0053] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:
[0054] Step 1-1: Add 3 mmol Zn(CH3COO)2·2H2O and 6 mmol InCl3·4H2O to a three-necked flask, and add 500 mL of deionized water. Stir with a constant temperature magnetic stirrer until the drug is completely dissolved. Then, add 16 mmol thioacetamide (TAA) and stir with a constant temperature magnetic stirrer until the drug is completely dissolved.
[0055] Steps 1-2: Slowly heat the solution to 94-96°C using an oil bath. At this temperature, continue magnetic stirring and reflux using a straight condenser until the solution turns orange-yellow. Stop heating and allow the solution to cool to room temperature in a three-necked flask.
[0056] Steps 1-3: After cooling, pour the solution into a beaker and wash it 3-5 times with deionized water. After the product settles, pour out the supernatant and then separate the product by vacuum filtration. The obtained product is block ZnIn2S4.
[0057] Step 2: The bulk ZnIn2S4 was redispersed in deionized water at a molar ratio of 1:3000 and ultrasonicated at 550W for 3 hours to obtain a single-layer ZnIn2S4 nanosheet dispersion with obvious Tyndall effect.
[0058] Step 3: Pour the dispersion into a petri dish and pre-freeze it in a -20°C refrigerator for 3 hours, then freeze-dry it at -60°C for 48 hours. The resulting orange-yellow powder is the ZnIn2S4 moiré superlattice material.
[0059] The ZnIn2S4 moiré superlattice material obtained in Example 2 was the same as the result in Example 1.
[0060] Example 3
[0061] Raw materials: Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium trichloride tetrahydrate (InCl3·4H2O), deionized water, and thioacetamide (TAA).
[0062] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:
[0063] Step 1-1: Add 3 mmol Zn(CH3COO)2·2H2O and 6 mmol InCl3·4H2O to a three-necked flask, and add 500 mL of deionized water. Stir with a constant temperature magnetic stirrer until the drug is completely dissolved. Then, add 16 mmol thioacetamide (TAA) and stir with a constant temperature magnetic stirrer until the drug is completely dissolved.
[0064] Steps 1-2: Slowly heat the solution to 94-96°C using an oil bath. At this temperature, continue magnetic stirring and reflux using a straight condenser until the solution turns orange-yellow. Stop heating and allow the solution to cool to room temperature in a three-necked flask.
[0065] Steps 1-3: After cooling, pour the solution into a beaker and wash it 3-5 times with deionized water. After the product settles, pour out the supernatant and then separate the product by vacuum filtration. The obtained product is block ZnIn2S4.
[0066] Step 2: The bulk ZnIn2S4 was redispersed in deionized water at a molar ratio of 1:2000 and ultrasonicated at 650W for 3 hours to obtain a single-layer ZnIn2S4 nanosheet dispersion with obvious Tyndall effect.
[0067] Step 3: Pour the dispersion into a petri dish and pre-freeze it at -20°C for 3 hours, then freeze-dry it at -60°C for 48 hours. The resulting orange-yellow powder is the ZnIn2S4 moiré superlattice material. The ZnIn2S4 moiré superlattice material obtained in Example 3 is the same as the result in Example 1.
[0068] Example 4
[0069] Raw materials: Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), indium trichloride tetrahydrate (InCl3·4H2O), deionized water, and thioacetamide (TAA).
[0070] Step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows:
[0071] Step 1-1: Add 3 mmol Zn(CH3COO)2·2H2O and 6 mmol InCl3·4H2O to a three-necked flask, and add 500 mL of deionized water. Stir with a constant temperature magnetic stirrer until the drug is completely dissolved. Then, add 16 mmol thioacetamide (TAA) and stir with a constant temperature magnetic stirrer until the drug is completely dissolved.
[0072] Steps 1-2: Slowly heat the solution to 98-102°C using an oil bath. At this temperature, continue magnetic stirring and reflux using a straight condenser until the solution turns orange-yellow. Stop heating and allow the solution to cool to room temperature in a three-necked flask.
[0073] Steps 1-3: After cooling, pour the solution into a beaker and wash it 3-5 times with deionized water. After the product settles, pour out the supernatant and then separate the product by vacuum filtration. The obtained product is block ZnIn2S4.
[0074] Step 2: The bulk ZnIn2S4 was redispersed in deionized water at a molar ratio of 1:2000 and ultrasonicated at 550W for 3 hours to obtain a single-layer ZnIn2S4 nanosheet dispersion with obvious Tyndall effect.
[0075] Step 3: Pour the dispersion into a petri dish and pre-freeze it in a -20°C refrigerator for 3 hours, then freeze-dry it at -60°C for 48 hours. The resulting orange-yellow powder is the ZnIn2S4 moiré superlattice material.
[0076] The ZnIn2S4 moiré superlattice material obtained in Example 4 was the same as the result in Example 1.
[0077] The accompanying figures demonstrate the successful synthesis of ZnIn2S4 moiré superlattice material using this method. Furthermore, the preparation method of this invention is simple to operate, has good reproducibility, and effectively solves the problems of limited stacking methods, easy interface contamination, and high preparation costs associated with traditional techniques, showing great potential for industrial applications. Moreover, the ZnIn2S4 moiré superlattice material synthesized by this method exhibits a regular moiré rotation angle, demonstrating excellent application potential in fields such as photocatalysis, photoelectric detection, and hydroelectric power generation materials.
[0078] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0079] It should be noted that the above content merely illustrates the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. For those skilled in the art, various improvements and modifications can be made without departing from the principle of the present invention, and all such improvements and modifications fall within the scope of protection of the claims of the present invention.
Claims
1. A method for preparing a semiconductor moiré superlattice material, characterized in that, Includes the following steps: Step 1: Synthesize bulk ZnIn2S4 by low-temperature reflux method; Step 2: Redisperse the block ZnIn2S4 in deionized water and sonicate it for 3-4 hours using an ultrasonic disperser to obtain a single-layer ZnIn2S4 nanosheet dispersion. Step 3: Pour the dispersion into a petri dish and pre-freeze it in a -20 ℃ refrigerator for 3 h, then freeze-dry it for 36~48 h to obtain orange-yellow powder ZnIn2S4 moiré superlattice material.
2. The method for preparing a semiconductor moiré superlattice material according to claim 1, characterized in that, In step 1, the specific steps for synthesizing bulk ZnIn2S4 by the low-temperature reflux method are as follows: Step 1-1: Add deionized water to Zn(CH3COO)2·2H2O and InCl3·4H2O and stir to dissolve; then add thioacetamide and stir until completely dissolved. Step 1-2: Slowly heat the solution obtained in Step 1-1 to 90~105℃ in an oil bath and continue the reaction. During the reaction, continuously stir with a magnetic force and use a straight condenser to reflux until the solution turns orange-yellow. Stop heating and let the solution cool to room temperature in a three-necked flask. Steps 1-3: After cooling, wash the solution with deionized water 3-5 times. After the product settles, pour off the supernatant and then separate the product by vacuum filtration. The obtained product is block ZnIn2S4.
3. The method for preparing a semiconductor moiré superlattice material according to claim 1, characterized in that, In step 2, the molar ratio of block ZnIn2S4 to deionized water is 1:2000~1:3000.
4. The method for preparing a semiconductor moiré superlattice material according to claim 1, characterized in that, In step 2, the ultrasonic power of the ultrasonic disperser is 500~700 W.
5. The method for preparing a semiconductor moiré superlattice material according to claim 1, characterized in that, In step 3, the freeze-drying temperature range is -60 ~ -50℃.
6. The method for preparing a semiconductor moiré superlattice material according to claim 2, characterized in that, In step 1-1, the molar ratio of Zn(CH3COO)2·2H2O, InCl3·4H2O, and thioacetamide is 3:6:16, and the molar volume ratio of Zn(CH3COO)2·2H2O to deionized water is 3:400~600 mmol / mL.
7. A semiconductor moiré superlattice material prepared by the preparation method according to any one of claims 1-5.
8. A semiconductor moiré superlattice material according to claim 7, characterized in that, The prepared semiconductor moiré superlattice material has a significant spontaneous curvature and a lateral dimension of 400–600 nm.
9. A semiconductor moiré superlattice material according to claim 7, characterized in that, The prepared semiconductor moiré superlattice materials have bilayer moiré superlattices with specific rotation angles of 12°±2° and 24°±2°, as well as trilayer moiré superlattices with a rotation angle of 12°±2° between each adjacent two layers.
10. The application of a semiconductor moiré superlattice material as described in claim 7 in photocatalytic materials, photoelectric detection, hydroelectric power generation or photovoltaic power generation materials.