Silicone-based resin composition and semiconductor device comprising same

Abstract

Provided is a silicone-based resin composition, comprising: an organopolysiloxane; and a thermally conductive filler, in which the silicone-based resin composition has a rate of change in thermal conductivity of 30% or less when measured by the following measurement method: [Equation 1] (see the specification of the present invention). Furthermore, the present invention provides a silicone resin composition and a semiconductor device comprising the same, the silicone resin composition comprising an organopolysiloxane and a thermally conductive filler, and having a thermal conductivity change rate of 30% or less as measured by the following measurement method: [Measurement Method] (see the specification of the present invention).

Description

Technical Field

[0001] The present invention relates to a silicone resin composition and a semiconductor device including the same. Background Art

[0002] Since most electronic components generate heat during their use, it is necessary to remove heat from the electronic components to ensure their normal operation. Specifically, in integrated circuit elements such as a central processing unit (CPU) used in a personal computer, for example, as the operating frequency increases, the heat dissipated also increases, and thus countermeasures against heat have become an important issue.

[0003] Accordingly, many methods for dissipating the heat have been proposed, and in electronic components that dissipate a large amount of heat, a method of dissipating heat by inserting a heat conductive material such as a heat conductive paste or a heat conductive sheet between the electronic component and a member such as a heat sink has been proposed. Korean Patent Application Publication No. 10-2020-0086307 discloses a semiconductor device including a heat conductive material.

[0004] However, in the case of a heat conductive material prepared by pressing a heat conductive composition, even when the same heat conductive composition is used, the heat conductive characteristics may vary depending on the pressing conditions, resulting in a reduction in the reliability of the product performance.

[0005] [Related Technical Documents]

[0006] [Patent Documents]

[0007] (Patent Document 1) Korean Patent Application Publication No. 10-2020-0086307 Summary of the Invention

[0008] [Technical Problem]

[0009] Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a silicone resin composition having minimized change in thermal conductivity and excellent heat dissipation and durability, and a semiconductor device including the silicone resin composition.

[0010] [Technical Solution]

[0011] According to an aspect of the present invention, the above and other objects can be achieved by providing a heat conductive filler including: a first heat conductive powder including dendritic-type particles; and a second heat conductive powder including spherical particles, wherein the first heat conductive powder has an average particle size uniformity of 0.3 to 4.0 calculated by the following Equation 1:

[0012] [Equation 1]

[0013] (D 90 - D 50 ) / (D 50 - D 10 )

[0014] where D 10 is the diameter of the first thermally conductive powder corresponding to 10% of the cumulative volume, D 50 is the diameter of the first thermally conductive powder corresponding to 50% of the cumulative volume, and D 90 is the diameter of the first thermally conductive powder corresponding to 90% of the cumulative volume.

[0015] According to another aspect of the present invention, there is provided a silicone resin composition comprising: an organopolysiloxane; and a thermally conductive filler, wherein when measured by the following measurement method, the silicone resin composition has a thermal conductivity change rate of 30% or less than 30%:

[0016] [Measurement Method]

[0017] (1) The silicone resin composition is molded by hot pressing for 15 minutes under the conditions of a temperature of 165 °C and a pressure of 26 kgf / cm 2 ) to produce a first sheet, and separately, the silicone resin composition is molded by hot pressing for 15 minutes under the conditions of a temperature of 165 °C and a pressure of 0.1 kgf / cm² to produce a second sheet.

[0018] (2) The first sheet and the second sheet are cured at 150 °C for 2 hours to produce a first sheet sample and a second sheet sample, respectively.

[0019] (3) The thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample are measured at 25 °C according to ISO 22007-2.

[0020] (4) The thermal conductivity change rate is calculated according to the following Equation 2:

[0021] [Equation 2]

[0022] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100

[0023] where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.

[0024] In one embodiment of the present invention, the silicone resin composition may contain an organopolysiloxane and a thermal conductive filler in a weight ratio of 20:80 to 5:95.

[0025] In one embodiment of the present invention, the thermal conductive filler may contain a first thermal conductive powder and a second thermal conductive powder, the first thermal conductive powder containing dendritic particles and the second thermal conductive powder containing spherical particles.

[0026] In one embodiment of the present invention, the thermal conductive filler may contain the first thermal conductive powder and the second thermal conductive powder in a weight ratio of 5:95 to 80:20.

[0027] In one embodiment of the present invention, the thermal conductive filler may contain the first thermal conductive powder and the second thermal conductive powder in a weight ratio of 5:95 to 50:50.

[0028] In one embodiment of the present invention, the first thermal conductive powder may have a tapped density of 0.1 g / cm 3 (g / cm³) to 3.0 g / cm³.

[0029] In one embodiment of the present invention, the first thermal conductive powder may have a specific surface area of 0.2 m² / g (m² / g) to 5.0 m² / g. 2 / g) to 5.0 m² / g.

[0030] In one embodiment of the present invention, the silicone resin composition may have a thermal conductivity per filler weight of 1 W / mK or greater than 1 W / mK calculated by the following Equation 3:

[0031] [Equation 3]

[0032] X / Y × 10

[0033] where X is the thermal conductivity of the first sheet sample or the second sheet sample measured at 25°C, and Y is the weight percentage of the thermal conductive filler based on the total weight of the silicone resin composition.

[0034] In one embodiment of the present invention, the first sheet sample or the second sheet sample may have a thermal conductivity of 10 W / mK or greater than 10 W / mK measured at 25°C.

[0035] According to yet another aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor package; a heat dissipation component disposed on the semiconductor package; and a heat conduction layer inserted between the semiconductor package and the heat dissipation component, wherein the heat conduction layer comprises a silicone resin composition, the silicone resin composition comprises an organopolysiloxane and a heat conductive filler, and when measured by the following measurement method, the silicone resin composition has a thermal conductivity change rate of 30% or less than 30%:

[0036] [Measurement method]

[0037] (1) The silicone resin composition is molded by hot pressing for 15 minutes at a temperature of 165 °C and a pressure of 26 kgf / cm² to produce a first sheet, and separately, the silicone resin composition is molded by hot pressing for 15 minutes at a temperature of 165 °C and a pressure of 0.1 kgf / cm² to produce a second sheet.

[0038] (2) The first sheet and the second sheet are cured at 150 °C for 2 hours to produce a first sheet sample and a second sheet sample, respectively.

[0039] (3) Measure the thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample at 25 °C according to ISO 22007-2.

[0040] (4) Calculate the thermal conductivity change rate according to the following Equation 2:

[0041] [Equation 2]

[0042] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100

[0043] where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.

[0044] [Beneficial effects]

[0045] The silicone resin composition of the present invention exhibits a thermal conductivity value that can achieve an appropriate heat dissipation function even when commercialized under different pressure conditions, and the silicone resin composition can improve the reliability of product performance due to its small thermal conductivity change.

[0046] In addition, the thermal conductive filler has a uniform average particle size and contains thermal conductive particles of different shapes in a specific content ratio, whereby the formation of an electrical network between the particles can be improved, so that even when the thermal conductive filler is contained in a low content, the silicone resin composition exhibits high thermal conductivity.

[0047] In addition, since the organopolysiloxane and the thermal conductive filler are contained in a specific content ratio, appropriate adhesion to an adherend can be maintained, and voids and cracks due to thermal shock do not occur, whereby excellent durability is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 A method for measuring the thermal conductivity of the silicone resin composition according to the present invention will be described by way of example in sequence.

[0049] Figure 2 A semiconductor device according to the present invention will be schematically illustrated by way of example. DETAILED DESCRIPTION

[0050] The structural description or functional description of the embodiments disclosed in this specification or this application is only for illustrative purposes to explain the embodiments according to the technical idea of the present invention. Each embodiment according to the technical idea of the present invention can be implemented in various forms other than the embodiments disclosed in this specification or this application, and it should not be construed that the technical idea of the present invention is limited to the embodiments described in this specification or this application.

[0051] In addition, when "comprising" or "including" components in this specification or this application, unless otherwise stated, other components are further comprised or included, rather than excluding other components. In addition, it should be understood that unless otherwise specified, all numerical ranges representing physical property values, dimensions, etc. of each component described in this specification or this application are modified by the term "about" in all cases.

[0052] Hereinafter, a thermal conductive filler and a silicone resin composition according to the present invention, and a semiconductor device including the thermal conductive filler and the silicone resin composition will be described.

[0053] <Thermal Conductive Filler>

[0054] The thermal conductive filler according to the present invention includes a first thermal conductive powder and a second thermal conductive powder. The first thermal conductive powder includes dendritic particles, the second thermal conductive powder includes spherical particles, and the average particle size uniformity of the first thermal conductive powder calculated according to the following Equation 1 may be from 0.3 to 4.0.

[0055] [Equation 1]

[0056] (D 90 -D 50) / (D 50 -D 10 )

[0057] wherein D 10 is the diameter of the first thermally conductive powder corresponding to 10% of the cumulative volume, D 50 is the diameter of the first thermally conductive powder corresponding to 50% of the cumulative volume, and D 90 is the diameter of the first thermally conductive powder corresponding to 90% of the cumulative volume.

[0058] D 10 、D 50 and D 90 can be measured using a laser diffraction method. The laser diffraction method can generally measure particle sizes in the range of several nanometers to several millimeters and can provide results with high reproducibility and high resolution.

[0059] When the average particle size uniformity calculated according to Equation 1 is within the above range, this means that the sizes of dendritic particles with a large specific surface area are uniform. Therefore, when this thermally conductive filler is incorporated into a silicone resin composition and used as a thermally conductive material, the electrical network between the thermally conductive fillers can be smooth, and thus high thermal conductivity can be exhibited even when the content of the thermally conductive filler is low.

[0060] <Silicone resin composition>

[0061] The silicone resin composition according to the present invention contains an organopolysiloxane and a thermally conductive filler, and has a thermal conductivity change rate of 30% or less when measured by the following measurement method.

[0062] [Measurement method]

[0063] (1) The silicone resin composition is molded by hot pressing at a temperature of 165 °C and a pressure of 26 kgf / cm² for 15 minutes to produce a first sheet, and separately, the silicone resin composition is molded by hot pressing at a temperature of 165 °C and a pressure of 0.1 kgf / cm² for 15 minutes to produce a second sheet.

[0064] (2) The first sheet and the second sheet are cured at 150 °C for 2 hours to produce a first sheet sample and a second sheet sample, respectively.

[0065] (3) The thermal conductivities of the first sheet sample and the second sheet sample are measured at 25 °C according to ISO 22007-2.

[0066] (4) The thermal conductivity change rate is calculated according to the following Equation 2:

[0067] [Equation 2]

[0068] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100

[0069] (where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.)

[0070] The silicone resin composition contains an organopolysiloxane.

[0071] The organopolysiloxane can be represented by the following formula 1:

[0072] [Formula 1]

[0073] R 1 a SiO b

[0074] where R 1 represents one or two or more groups selected from the group consisting of a hydrogen atom, a hydroxyl group, and a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and a can be from about 1.8 to about 2.2. a + b can be from about 3.5 to about 8.

[0075] a + b can be 4.

[0076] In formula 1, the saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms represented by R 1 can be, for example: an alkyl group such as methyl, ethyl, propyl, hexyl, octyl, decyl, dodecyl, tetradecyl, hexadecyl or octadecyl; a cycloalkyl group such as cyclopentyl or cyclohexyl; an alkenyl group such as vinyl or allyl; an aryl group such as phenyl or tolyl; an aralkyl group such as 2-phenylethyl or 2-methyl-2-phenylethyl; or a halogenated hydrocarbon group such as 3,3,3-trifluoropropyl, 2-(perfluorobutyl)ethyl, 2-(perfluorooctyl)ethyl or p-chlorophenyl.

[0077] The organopolysiloxane can have a weight average molecular weight of from about 40,000 grams per mole (g / mol) to about 80,000 grams per mole, from about 30,000 grams per mole to about 100,000 grams per mole, from about 500 grams per mole to about 10,000 grams per mole, from about 700 grams per mole to about 7,000 grams per mole, from about 1,000 grams per mole to about 5,000 grams per mole, or from about 1,500 grams per mole to about 3,000 grams per mole. The weight average molecular weight can be measured based on polystyrene.

[0078] In the organopolysiloxane, the kinematic viscosity at 25 °C can be 10 square millimeters per second (mm2 from 10,000 square millimeters per second ( / s) to 100,000 square millimeters per second, from 20,000 square millimeters per second to 100,000 square millimeters per second, or from about 30 square millimeters per second to about 10,000 square millimeters per second. The kinematic viscosity of the organopolysiloxane may be a value measured at 25 °C using an Ostwald viscometer.

[0079] When the weight average molecular weight and kinematic viscosity of the organopolysiloxane are within the above ranges, an appropriate bonding strength to the adherend can be maintained, and since voids and cracks due to thermal shock do not occur, the durability can be improved.

[0080] The organopolysiloxane may contain a first organopolysiloxane.

[0081] The first organopolysiloxane contains an alkenyl group bonded to a silicon atom, and the number of alkenyl groups present in one molecule of the first organopolysiloxane may be at least two, two to ten, two to five, or two.

[0082] The first organopolysiloxane may be represented by the following formula 2:

[0083] [Formula 2]

[0084] R 1 a R 2 c SiO b

[0085] where R 1 may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 2 may be an alkenyl group. In formula 2, a + c may be from about 1.8 to about 2.2, and a + b + c may be from about 3.5 to about 8. In formula 2, a + b + c may be about 4. In formula 2, a may be from about 1.8 to about 2.2. In addition, c may be from 0.0001 to 0.1.

[0086] The first organopolysiloxane may be represented by the following formula 3:

[0087] [Formula 3]

[0088]

[0089] where R 1 may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, R 2 may be an alkenyl group. Additionally, in formula 3, n may be from 1 to 1,500, and m may be from 0 to 20. In formula 3, n may be from 10 to 1,000, and m may be from 0 to 20.

[0090] The first organopolysiloxane can be represented by the following formula 4:

[0091] [Formula 4]

[0092]

[0093] where n can be from 1 to 1,500. n can be from 10 to 1,000.

[0094] The first organopolysiloxane can have a weight average molecular weight (Mw) of about 500 g / mol to about 10,000 g / mol, about 700 g / mol to about 7,000 g / mol, about 1,000 g / mol to about 5,000 g / mol, or about 1,500 g / mol to about 3,000 g / mol. The weight average molecular weight can be measured based on polystyrene.

[0095] In the first organopolysiloxane, the kinematic viscosity at 23 °C can be 10 cPs to 100,000 cPs, 30 cPs to 50,000 cPs, or 10,000 cPs to 40,000 cPs. The kinematic viscosity of the first organopolysiloxane can be the value measured at 25 °C using an Ostwald viscometer.

[0096] The organopolysiloxane can contain a second organopolysiloxane.

[0097] The second organopolysiloxane can contain hydrogen groups bonded to silicon atoms. The number of hydrogen groups per molecule of the second organopolysiloxane can be 1 to 10, 2 to 10, 2 to 5, or 2.

[0098] The second organopolysiloxane can be represented by the following formula 5:

[0099] [Formula 5]

[0100]

[0101] where R 1 can be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 3 can be a hydrogen atom. Further, in formula 5, n can be from 1 to 1,500, and m can be from 0 to 20. In formula 5, n can be from 10 to 1,000, and m can be from 0 to 20. In formula 5, n can be from 1 to 1,500, and m can be 0.

[0102] The second organopolysiloxane can be represented by the following formula 6:

[0103] [Formula 6]

[0104]

[0105] At about 23 °C, the second organopolysiloxane may have a viscosity of from about 500 cPs to about 5,000 cPs, from about 500 cPs to about 3,000 cPs, or from about 500 cPs to about 2,000 cPs.

[0106] The organopolysiloxane may further comprise a third organopolysiloxane. The third organopolysiloxane may be represented by the following formula 7:

[0107] [Formula 7]

[0108]

[0109] wherein R 1 may be a hydrogen atom, a hydroxyl group or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 3 may be a hydrogen atom. Additionally, in formula 7, n may be from 1 to 1,500, and m may be from 1 to 500. In formula 7, n may be from 10 to 1,000, and m may be from 1 to 100.

[0110] The third organopolysiloxane may be represented by the following formula 8:

[0111] [Formula 8]

[0112]

[0113] wherein n may be from 1 to 1,500, and m may be from 1 to 500. In formula 8, n may be from 10 to 1,000, and m may be from 1 to 100.

[0114] At about 23 °C, the third organopolysiloxane may have a viscosity of from about 50 cPs to about 1,000 cPs, from about 100 cPs to about 500 cPs, or from about 100 cPs to about 500 cPs.

[0115] The ratio of the viscosity of the first organopolysiloxane to the viscosity of the second organopolysiloxane may be from 10:1 to 40:1.

[0116] Furthermore, the ratio of the viscosity of the second organopolysiloxane to the viscosity of the third organopolysiloxane may be from 2:1 to 10:1.

[0117] Based on 100 parts by weight of the total organopolysiloxane, the content of the first organopolysiloxane may be from about 60 parts by weight to about 90 parts by weight, from about 70 parts by weight to about 85 parts by weight, or from about 75 parts by weight to about 85 parts by weight.

[0118] Based on 100 parts by weight of the first organopolysiloxane, the content of the second organopolysiloxane may be from about 10 parts by weight to about 40 parts by weight, from about 10 parts by weight to about 30 parts by weight, or from about 12 parts by weight to about 23 parts by weight.

[0119] Based on 100 parts by weight of the first organopolysiloxane, the content of the third organopolysiloxane can be about 3 parts by weight to about 20 parts by weight, about 3 parts by weight to about 15 parts by weight, or about 4 parts by weight to about 10 parts by weight.

[0120] When the silicone resin composition contains the first organopolysiloxane, the second organopolysiloxane, and the third organopolysiloxane within the above ranges, appropriate adhesion to the adherend can be maintained, and the silicone resin composition can spread evenly during the coating process.

[0121] The silicone resin composition contains a heat-conductive filler.

[0122] The heat-conductive filler may include a first heat-conductive powder and a second heat-conductive powder. The first heat-conductive powder contains dendritic particles, and the second heat-conductive powder contains spherical particles. The first heat-conductive powder may include a first silver powder. The first silver powder may include dendritic silver particles. The first silver powder may include surface-treated dendritic silver particles. The first silver powder may include dendritic silver particles coated with copper.

[0123] The first heat-conductive powder may have a tapped density of 0.1 g / cm³ to 3.0 g / cm³, 0.1 g / cm³ to 2.0 g / cm³, 0.1 g / cm³ to 1.8 g / cm³, 0.1 g / cm³ to 1.6 g / cm³, 0.2 g / cm³ to 1.6 g / cm³, 0.3 g / cm³ to 1.6 g / cm³, or 0.4 g / cm³ to 1.6 g / cm³.

[0124] To obtain the tapped density, 100 grams of silver powder is weighed and gently placed into a 100-ml graduated cylinder with a funnel, and then the graduated cylinder is placed on a tapped density measuring device, and the silver powder is compressed by dropping it 600 times at a rate of 60 times per minute from a dropping distance of 20 mm. The tapped density can be calculated based on the volume of the compressed powder.

[0125] The first heat-conductive powder may have a specific surface area of 0.2 m² / g to 5.0 m² / g, 0.3 m² / g to 5.0 m² / g, 0.4 m² / g to 5.0 m² / g, 0.5 m² / g to 5.0 m² / g, 0.7 m² / g to 5.0 m² / g, 0.9 m² / g to 5.0 m² / g, 1.0 m² / g to 5.0 m² / g, 1.2 m² / g to 5.0 m² / g, 1.4 m² / g to 5.0 m² / g, 1.4 m² / g to 4.8 m² / g, or 1.4 m² / g to 4.5 m² / g.

[0126] To obtain the specific surface area, take about 2 g of silver powder as a sample, and after degassing at 60 ± 5 °C for 10 minutes, measure the total surface area using an automatic specific surface area measuring device (BET method). Weigh the amount of the sample, and calculate the specific surface area according to the following equation.

[0127] Specific surface area (m² / g) = Total surface area (m²) / Amount of sample (g)

[0128] The aspect ratio of the dendritic silver particles contained in the first silver powder may be about 2 to 30, about 5 to 30, about 5 to 25, or about 5 to 20.

[0129] The first silver powder can be surface-treated with a surface treatment agent. The surface treatment agent may include C10 to C20 fatty acids. Examples of fatty acids include capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, arachidic acid, myristoleic acid, palmitolic acid, sapienic acid, oleic acid, elaidic acid, vaccenic acid, linoleic acid, elaidonic acid, arachidonic acid, eicosapentaenoic acid, α-linolenic acid, etc.

[0130] The ignition loss (Ig loss) of the first silver powder may be less than about 0.8 wt%, less than about 0.7 wt%, or less than about 0.6 wt%. The ignition loss can be carried out and measured at about 538 °C in about 1 hour.

[0131] Even when using a small amount of the surface treatment agent, the surface of the first silver powder can be effectively treated. That is, the first silver powder has a relatively low tapped density and a large specific surface area, and can be surface-treated with a small amount of the surface treatment agent. Therefore, the first silver powder can be uniformly dispersed in the organopolysiloxane, and the thermal connection of the thermal conductive filler can be improved. That is, due to the improved dispersibility of the first silver powder, the first silver powder can be added to the organopolysiloxane in a high content. In addition, since the first silver powder has a surface area such as a dendritic type, and the layer of the first silver powder coated with the surface treatment agent is thin, the contact characteristics between the thermal conductive fillers can be improved. Therefore, the first silver powder can increase the thermal conductivity of the silicone resin composition.

[0132] The first silver powder may have an average particle size of about 0.5 μm to about 4 μm, about 1 μm to about 3 μm, or about 1.5 μm to about 2.5 μm.

[0133] Based on 100 parts by weight of the organopolysiloxane, the silicone resin composition may contain the first silver powder in an amount of about 300 parts by weight to about 1,000 parts by weight, about 400 parts by weight to about 900 parts by weight, or about 500 parts by weight to about 800 parts by weight.

[0134] The second heat-conductive powder may contain a second silver powder. The second silver powder may contain spherical silver particles. The second silver powder may contain surface-treated spherical silver particles. The second silver powder may contain spherical silver particles coated with copper.

[0135] The second heat-conductive powder may have a tapped density greater than about 3.0 g / cm³, greater than about 3.01 g / cm³, greater than about 4 g / cm³, greater than about 5 g / cm³, or greater than about 5 g / cm³ and less than about 9 g / cm³.

[0136] The second heat-conductive powder may have a specific surface area less than about 1 m² / g, less than about 0.9 m² / g, less than about 0.8 m² / g, less than about 0.7 m² / g, or less than about 0.6 m² / g.

[0137] The aspect ratio of the spherical silver particles contained in the second silver powder may be about 1 to 2, about 1.2 to 1.7, or about 1.25 to 1.65.

[0138] The second silver powder may be surface-treated with a surface treatment agent. The surface treatment agent may contain C10 to C20 fatty acids.

[0139] The second silver powder may have a loss on ignition (Ig-loss) of less than about 0.8 wt%, less than about 0.7 wt%, or less than about 0.6 wt%.

[0140] The second silver powder may have an average particle size of about 1.5 µm to about 5 µm, about 2 µm to about 4 µm, or about 2.5 µm to about 3.5 µm.

[0141] Based on 100 parts by weight of the organopolysiloxane, the silicone resin composition may contain the second silver powder in an amount of about 100 parts by weight to about 800 parts by weight, about 150 parts by weight to about 700 parts by weight, or about 170 parts by weight to about 600 parts by weight.

[0142] The thermal conductive filler may contain the first thermal conductive powder and the second thermal conductive powder in a weight ratio of 5:95 to 80:20, 5:95 to 60:40, or 5:95 to 50:50. Generally, even in the same silicone resin composition, the distribution characteristics of the thermal conductive filler contained in the silicone resin composition are also different. Therefore, depending on the pressing pressure during the product manufacturing process, significant differences may occur in the thermal conductivity of the final product. The thermal conductive filler includes the first thermal conductive powder and the second thermal conductive powder, and the second thermal conductive powder includes particles having a different shape from the particles contained in the first thermal conductive powder, thereby improving the formation of the electrical network between the particles and improving the thermal conductivity. In addition, since the change rate of the thermal conductivity according to the difference in pressurization pressure is small during the commercialization process of the silicone resin composition, the reliability of the product performance can be improved. In addition, even when the filler is contained in a low content, the silicone resin composition can also exhibit high thermal conductivity.

[0143] The silicone resin composition may contain the organopolysiloxane and the thermal conductive filler in a weight ratio of 20:80 to 5:95, 20:80 to 6:94, or 20:80 to 10:90. When this range is satisfied, appropriate adhesion to the adherend can be maintained, and since voids and cracks due to thermal shock do not occur, the durability can be improved.

[0144] When measured by the following measurement method, the silicone resin composition according to the present invention has a thermal conductivity change rate of 30% or less than 30%:

[0145] [Measurement method]

[0146] (1) The silicone resin composition is molded by hot pressing at a temperature of 165 °C and a pressure of 26 kgf / cm² for 15 minutes to manufacture a first sheet, and separately, the silicone resin composition is molded by hot pressing at a temperature of 165 °C and a pressure of 0.1 kgf / cm² for 15 minutes to manufacture a second sheet.

[0147] (2) The first sheet and the second sheet are cured at 150 °C for 2 hours to manufacture a first sheet sample and a second sheet sample, respectively.

[0148] (3) The thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample are measured at 25 °C according to ISO 22007-2.

[0149] (4) Calculate the thermal conductivity change rate according to the following Equation 2:

[0150] [Equation 2]

[0151] Rate of change of thermal conductivity (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100

[0152] (where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.)

[0153] Figure 1 The method for measuring the thermal conductivity of the silicone resin composition according to the present invention will be described by way of example in sequence.

[0154] Referring to Figure 1 , 10 of each silicone resin composition is fed into the mold 20, and then (a-1) the silicone resin composition 10 is molded by hot pressing at a temperature of 165 °C and a pressure of 26 kgf / cm² for 15 minutes to produce the first sheet 11, and separately, (a-2) the silicone resin composition 10 is molded by hot pressing at a temperature of 165 °C and a pressure of 0.1 kgf / cm² for 15 minutes to produce the second sheet 12.

[0155] Next, (b) the first sheet 11 and the second sheet 12 are cured at 150 °C for 2 hours to produce the first sheet sample 11-1 and the second sheet sample 11-2, respectively. The first sheet 11 and the second sheet 12 are fed into the drying oven 30 for curing.

[0156] Next, (c) the thermal conductivities of the first sheet sample 11-1 and the second sheet sample 11-2 are measured at 25 °C using the sensor 40 according to ISO 22007-2.

[0157] Next, the rate of change of thermal conductivity is calculated by substituting the measured values of the thermal conductivities of the first sheet sample 11-1 and the second sheet sample 11-2 into Equation 1.

[0158] The rate of change of thermal conductivity of the silicone resin composition measured by this measurement method can be 25% or less than 25%, 20% or less than 20%, 15% or less than 15%, or 10% or less than 10%.

[0159] Since the silicone resin composition has a rate of change of thermal conductivity, even when the silicone resin composition is commercialized under different pressing conditions, due to the small change in the rate of change of thermal conductivity, the reliability of the product performance can be ensured. In addition, even when a thermal shock is applied to a product made of the silicone resin composition, appropriate adhesion to the adherend can be maintained, and voids and cracks caused by the thermal shock do not occur.

[0160] The silicone resin composition may have a thermal conductivity of 1 W / mK or greater than 1 W / mK, 1.05 W / mK or greater than 1.05 W / mK, 1.07 W / mK or greater than 1.07 W / mK, 1.1 W / mK or greater than 1.1 W / mK, or 1.2 W / mK or greater than 1.2 W / mK per unit filler weight calculated by the following Equation 3:

[0161] [Equation 3]

[0162] X / Y×10

[0163] (wherein X is the thermal conductivity of the first sheet sample or the second sheet sample measured at 25 °C, and Y is the weight percentage of the heat conductive filler based on the total weight of the silicone resin composition.)

[0164] Since the silicone resin composition has a thermal conductivity of 1 W / mK or greater than 1 W / mK per unit filler weight calculated by Equation 3, even when the silicone resin composition contains the same heat conductive filler, it can exhibit a relatively high thermal conductivity.

[0165] The first sheet sample or the second sheet sample may have a thermal conductivity of 10 W / mK or greater than 10 W / mK, 10.1 W / mK or greater than 10.1 W / mK, 10.2 W / mK or greater than 10.2 W / mK, 10.3 W / mK or greater than 10.3 W / mK, or 10.5 W / mK or greater than 10.5 W / mK measured at 25 °C.

[0166] Since the first sheet sample or the second sheet sample made of the silicone resin composition has a thermal conductivity within the above range, even when the silicone resin composition is commercialized under different pressure conditions, an appropriate heat dissipation function can be achieved.

[0167] The silicone resin composition may further contain a tackifier.

[0168] The tackifier may include alkoxysilane. In addition, the tackifier may include an epoxy group. The tackifier may be at least one selected from the group consisting of: 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltriethoxysilane.

[0169] Based on 100 parts by weight of the organopolysiloxane, the silicone resin composition may contain the tackifier in an amount of about 1 part by weight to about 20 parts by weight, about 1 part by weight to about 10 parts by weight, or about 2 parts by weight to about 8 parts by weight. The tackifier can improve the adhesion strength between the organopolysiloxane and the heat conductive filler.

[0170] The silicone resin composition may further comprise a curing catalyst. The curing catalyst can accelerate the curing of the silicone resin composition.

[0171] The curing catalyst may comprise a platinum-based catalyst.

[0172] Examples of the curing catalyst include: organotitanates such as platinum-divinyltetramethyldisiloxane complex, tetrabutyl titanate, and tetraisopropyl titanate; organotitanium chelate compounds such as diisopropoxybis(acetoacetic acid)titanium and diisopropoxybis(ethylacetoacetic acid)titanium; organoaluminum compounds such as tris(acetylacetonato)aluminum and tris(ethylacetoacetato)aluminum; organozirconium compounds such as zirconium(IV) acetylacetonate and zirconium tetrabutylate; organotin compounds such as dibutyltin dioctoate, dibutyltin dilaurate, and butyltin 2-ethylhexanoate; metal salts of organic carboxylic acids such as tin naphthenate, tin oleate, tin butyrate, cobalt naphthenate, and zinc stearate; amine compounds such as hexylamine and dodecylamine phosphate and their salts; quaternary ammonium salts such as benzyltriethylammonium acetate; lower fatty acid salts of alkali metals such as potassium acetate; dialkylhydroxylamines such as dimethylhydroxylamine and diethylhydroxylamine; and guanidyl group-containing organosilicon compounds.

[0173] Based on 100 parts by weight of the organopolysiloxane, the silicone resin composition may contain the curing catalyst in an amount of about 0.01 part by weight to about 5 parts by weight, about 0.03 part by weight to about 3 parts by weight, or about 0.1 part by weight to about 2 parts by weight.

[0174] The silicone resin composition may further comprise a reaction inhibitor. The reaction inhibitor may be at least one selected from the group consisting of: acetylenic compounds such as 2-methyl-3-butyn-2-ol, 2-phenyl-3-butyn-2-ol, and 1-ethynyl-1-cyclohexanol; ene-yne compounds such as 3-methyl-3-penten-1-yne and 3,5-dimethyl-3-hexen-1-yne; curing reaction inhibitors such as hydrazine compounds, phosphine compounds, and thiol compounds, etc.

[0175] Based on 100 parts by weight of the organopolysiloxane, the silicone resin composition may contain the reaction inhibitor in an amount of about 0.0001 part by weight to about 10 parts by weight.

[0176] <Method for preparing a silicone resin composition>

[0177] The method for preparing the silicone resin composition may be a known preparation method, and there is no specific limitation thereto.

[0178] For example, the silicone resin composition can be prepared by mixing an organopolysiloxane, a heat-conductive filler, a tackifier, a curing catalyst, a curing reaction inhibitor, etc. for 30 minutes to 4 hours using a mixer (e.g., Trimix mixer, Twinmix mixer, and planetary mixer (all manufactured by Inoue Seisakusho Co., Ltd., registered trademarks)), an Ultramixer (manufactured by Mizuho Kogyo Co., Ltd., registered trademark), or a Hibis Disper Mix (manufactured by Primix Co., Ltd., registered trademark). During the mixing process, the process temperature can be from about 0°C to about 25°C.

[0179] <Semiconductor device>

[0180] Figure 2 Schematically illustrate a semiconductor device according to the present invention.

[0181] Refer to Figure 2 , the semiconductor device can include a circuit board 100, a semiconductor package 200, conductive bumps 300, a heat dissipation component 400, and a heat conduction layer 500.

[0182] The semiconductor device according to the present invention includes a semiconductor package 200, a heat dissipation component 400 disposed on the semiconductor package 200, and a heat conduction layer 500 inserted between the semiconductor package 200 and the heat dissipation component 400, wherein the heat conduction layer 500 includes a silicone resin composition, and the silicone resin composition includes an organopolysiloxane and a heat-conductive filler, and has a thermal conductivity change rate of 30% or less than 30% when measured by the following measurement method:

[0183] [Measurement method]

[0184] (1) Mold the silicone resin composition by hot pressing at a temperature of 165°C and a pressure of 26 kgf / cm² for 15 minutes to manufacture a first sheet, and separately, mold the silicone resin composition by hot pressing at a temperature of 165°C and a pressure of 0.1 kgf / cm² for 15 minutes to manufacture a second sheet.

[0185] (2) Cure the first sheet and the second sheet at 150°C for 2 hours to manufacture a first sheet sample and a second sheet sample, respectively.

[0186] (3) Measure the thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample at 25°C according to ISO 22007-2.

[0187] (4) Calculate the thermal conductivity change rate according to the following Equation 2:

[0188] [Equation 2]

[0189] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100

[0190] (where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.)

[0191] The specific method for measuring the thermal conductivity change rate of the silicone resin composition is the same as that Figure 1 shown.

[0192] Since the silicone resin composition has a thermal conductivity change rate, the heat conduction layer 500 containing the silicone resin composition has a small change in terms of the thermal conductivity change rate, ensuring the reliability of the product performance. In addition, even when a thermal shock is applied to the heat conduction layer 500, appropriate adhesion to the semiconductor package 200 and the heat dissipation component 400 can be maintained, and voids and cracks caused by the thermal shock do not occur.

[0193] The circuit board 100 can support the semiconductor package 200, the conductive bumps 300, the heat dissipation component 400, and the heat conduction layer 500.

[0194] The circuit board 100 can include circuit patterns. The circuit board 100 can include a plurality of circuit patterns disposed inside a flat main body, the flat main body including an insulating heat-resistant material and having a predetermined strength. In addition, the circuit board 100 can include connection pads that are electrically connected to the circuit patterns and disposed on the main body.

[0195] For example, the main body of the circuit board 100 can include a thermosetting resin substrate (e.g., an epoxy resin substrate or a polyimide substrate), a flat plate, or a flat plate laminated with a heat-resistant organic film (e.g., a liquid crystal polyester film or a polyamide film). The circuit patterns can be disposed inside the main body in a pattern shape and can include power supply wirings for power supply, ground wirings, and signal wirings for signal transmission. Each wiring can be disposed to be separated from each other by a plurality of interlayer insulating films formed on the upper and lower surfaces of the main body.

[0196] The connection pads can be exposed to the outside from the upper surface of the main body and can be connected to the circuit patterns. Therefore, an external connection body connected to the circuit board 100 can be electrically connected to the internal circuit patterns through the connection pads.

[0197] Various electronic components can be mounted on the connection pads included in the circuit board 100. That is, the circuit board 100 can be a system board on which electronic components including the semiconductor package 200 are mounted.

[0198] The semiconductor package 200 can be mounted on the circuit board 100. The semiconductor package 200 can be disposed on the circuit board 100. The semiconductor package 200 can be connected to the circuit board 100 by means of conductive bumps 300.

[0199] The semiconductor package 200 can include: a semiconductor chip including an integrated circuit; a semiconductor package substrate connected to the semiconductor chip; a conductive solder for connecting the semiconductor chip and the semiconductor package substrate; and a sealing member for sealing the semiconductor chip and the conductive solder. The sealing member can include a resin composition, such as an epoxy molding material.

[0200] The semiconductor package 200 can be a memory device, a central processing unit, etc.

[0201] The conductive bumps 300 can be disposed between the semiconductor package 200 and the circuit board 100. The conductive bumps 300 can electrically connect the semiconductor package 200 and the circuit board 100 to each other. The conductive bumps 300 can be electrically connected to the semiconductor package 200 and the connection pads.

[0202] The heat dissipation component 400 can be disposed on the semiconductor package 200. The heat dissipation component 400 can cover the semiconductor package 200. The heat dissipation component 400 can be joined to the circuit board 100. The heat dissipation component 400 can cover the side surface of the semiconductor package 200.

[0203] The heat dissipation component 400 can include a conductor. The heat dissipation component 400 can include a metal. The heat dissipation component 400 can be thermally connected to an external heat sink fin.

[0204] In addition, the heat dissipation component 400 can protect the semiconductor package 200 from damage by external physical impact forces. The heat dissipation component 400 can protect the semiconductor package 200 from damage by external electromagnetic waves. That is, the heat dissipation component 400 can block external electromagnetic waves.

[0205] The thermal conduction layer 500 can be disposed between the semiconductor package 200 and the heat dissipation component 400. The thermal conduction layer 500 can be in direct contact with the semiconductor package 200 and the heat dissipation component 400. The thermal conduction layer 500 can be in close contact between the semiconductor package 200 and the heat dissipation component 400.

[0206] The thermal conduction layer 500 can be thermally connected to the semiconductor package 200 and the heat dissipation component 400. That is, the thermal conduction layer 500 can transfer the heat generated from the semiconductor package 200 to the heat dissipation component 400.

[0207] The thickness of the heat conduction layer 500 can be about 1 micron to about 100 microns, about 2 microns to about 70 microns, about 5 microns to about 60 microns, or about 10 microns to about 40 microns.

[0208] <Method for manufacturing a semiconductor device>

[0209] The method for manufacturing a semiconductor device can be a known manufacturing method, and there is no specific limitation thereto.

[0210] First, the semiconductor package 200 can be mounted on the circuit board 100 by means of the conductive bumps 300. Next, a silicone resin composition can be coated on the semiconductor package 200. As an alternative, the silicone resin composition can be coated on the lower surface of the heat dissipation component 400.

[0211] Next, the heat dissipation component 400 can be made to cover the semiconductor package 200. Accordingly, the coated silicone resin composition can be in direct contact with the lower surface of the heat dissipation component 400 and the upper surface of the semiconductor package 200, and the curable silicone resin composition can be cured at a temperature of about 80°C or higher than 80°C in a state where a pressure of about 0.01 MPa or higher than 0.01 MPa is applied.

[0212] The pressure during the curing process can be about 0.01 MPa or higher than 0.01 MPa. The pressure during the curing process can be about 0.05 MPa to about 100 MPa. The pressure during the curing process can be about 0.1 MPa to about 100 MPa.

[0213] The temperature during the curing process can be about 110°C to about 300°C. The temperature during the curing process can be about 120°C to about 300°C. The temperature during the curing process can be about 140°C to about 300°C. The curing time during the curing process can be about 30 minutes to about 5 hours. The heat conduction layer 500 can be formed by this process.

[0214] Hereinafter, the present invention will be described in more detail based on examples and comparative examples. However, the following examples and comparative examples are only examples for more specifically explaining the present invention, and the present invention is not limited to the following examples and comparative examples.

[0215] Examples

[0216] - Organopolysiloxane #1: A compound represented by the above formula 4, having a viscosity of 20,000 cPs at 23°C, and containing alkenyl groups bonded to silicon.

[0217] - Organopolysiloxane #2: A compound represented by the above formula 6, having a viscosity of 1,000 cPs at 23°C, and containing a structure in which hydrogen groups are bonded to both ends thereof.

[0218] - Organopolysiloxane #3: A compound represented by the above formula 8, having a viscosity of 1,000 cPs at 23°C and containing a structure in which hydrogen groups are bonded to its side chains.

[0219] - Thermal conductive filler #1: Silver powder, having a tapped density of about 0.7 g / cm³, a specific surface area of about 1.3 m² / g, an average particle size uniformity ((D 90 - D 50 ) / (D 50 - D 10 )) of 1.1, an aspect ratio of 12 (dendritic type), and an Ig-loss of 0.4 wt% at about 538°C, and surface-treated with fatty acid.

[0220] - Thermal conductive filler #2: Silver powder, having a tapped density of about 6.4 g / cm³, a specific surface area of about 0.3 m² / g, an average particle size uniformity ((D 90 - D 50 ) / (D 50 - D 10 )) of 1.8, an aspect ratio of 1.5 (spherical), and an Ig-loss of 0.05 wt% at about 538°C.

[0221] - Tackifier: 3-Glycidoxypropyltrimethoxysilane.

[0222] - Curing catalyst: Platinum-divinyltetramethyldisiloxane complex.

[0223] - Reaction inhibitor: 1-Ethynyl-1-cyclohexanol.

[0224] Examples 1 to 4 and Comparative Examples 1 to 4

[0225] The silicone resin composition was prepared by adding each composition shown in Table 1 below to a planetary mixer and uniformly mixing at a speed of about 40 revolutions per minute (rpm) at room temperature for 1 hour.

[0226] [Table 1]

[0227]

[0228] Experimental Example

[0229] <Manufacture of Samples>

[0230] Sheets were manufactured by molding the silicone resin compositions in Examples 1 to 4 and Comparative Examples 1 to 4 by hot pressing under the temperature, pressure, and time conditions shown in Table 2 below. Next, the sheet was cured at 150 °C for 2 hours, and then the sheet was made into a sample having a width of 30 mm, a length of 30 mm, and a thickness of 4 mm.

[0231] [Table 2]

[0232]

[0233]

[0234] Experimental Example 1 - Measurement of Thermal Conductivity

[0235] The thermal conductivities of the samples produced in Examples 1-1 to Comparative Examples 4-5 were measured at 25 °C using a thermal conductivity analyzer (model name: TPS-2500S, manufacturer: Hot Disk AB) according to the ISO 22007-2 method. The results are shown in Table 3 below.

[0236] Experimental Example 2 - Measurement of Thermal Conductivity after Thermal Shock

[0237] The samples produced in Examples 1-1 to Comparative Examples 4-5 were placed in a thermal shock tester (product name: TSE-11-A), which was set to alternately repeat -40 °C and 125 °C for 30 minutes each. After repeating 300 times, the thermal conductivity was measured in the same manner as in Experimental Example 1. The results are shown in Table 3 below.

[0238] Experimental Example 3 - Appearance Evaluation

[0239] After repeating 300 times according to Experimental Example 2, the states of the samples of Examples 1-1 to Comparative Examples 4-5 were visually observed. A state without voids and cracks was evaluated as O, and a state with voids or cracks was evaluated as X. The results are shown in Table 3 below.

[0240] [Table 3]

[0241]

[0242]

[0243] Referring to Tables 1 to 3, it was confirmed that even in the case of silicone resin compositions having the same composition, the thermal conductivity characteristics can have different performances depending on the applied pressure. Specifically, it was confirmed that regardless of the pressure applied during the sheet manufacturing process, there were no significant changes in the thermal conductivity of Examples 1 to 4, and the thermal conductivity after thermal shock was similar to that before thermal shock, resulting in excellent heat dissipation performance and no voids and cracks appearing after thermal shock, thereby having excellent durability. In addition, it was confirmed that based on the same content of thermal conductive filler, Examples 1 to 4 exhibited relatively high thermal conductivity compared to Comparative Examples 1 to 4.

[0244] In Comparative Examples 1 to 4, depending on the pressure applied during the sheet manufacturing process, the thermal conductivity change rate exceeded 30%, and there was a large deviation between the thermal conductivity before thermal shock and that after thermal shock. In addition, in Comparative Examples 1 to 4, voids and cracks appeared after thermal shock. Therefore, it was confirmed that the heat dissipation performance and durability of Comparative Examples 1 to 4 were lower than those of the Examples. In addition, it was confirmed that based on the same content of thermal conductive filler, Comparative Examples 1 to 4 exhibited relatively low thermal conductivity compared to Examples 1 to 4.

[0245]

Symbol Explanation

[0246] 10: Silicone resin composition

[0247] 11: First sheet

[0248] 12: Second sheet

[0249] 11-1: First sheet sample

[0250] 12-1: Second sheet sample

[0251] 20: Mold

[0252] 30: Drying oven

[0253] 40: Sensor

[0254] 100: Circuit board

[0255] 200: Semiconductor package

[0256] 300: Conductive bump

[0257] 400: Heat dissipation component

[0258] 500: Thermal conduction layer.

Claims

1. A thermal conductive filler, comprising: A first thermal conductive powder, comprising dendritic particles; and A second thermal conductive powder, comprising spherical particles, wherein the first thermal conductive powder has an average particle size uniformity of 0.3 to 4.0 calculated by the following Equation 1: [Equation 1] (D 90 -D 50 ) / (D 50 -D 10 ) where D 10 is the diameter of the first thermally conductive powder corresponding to 10% of the cumulative volume, D 50 is the diameter of the first thermally conductive powder corresponding to 50% of the cumulative volume, and D 90 is the diameter of the first thermally conductive powder corresponding to 90% of the cumulative volume.

2. A silicone resin composition, comprising: An organopolysiloxane; and A thermal conductive filler, wherein when measured by the following measurement method, the silicone resin composition has a thermal conductivity change rate of 30% or less than 30%: [Measurement method] 1) Molding the silicone resin composition by hot pressing at 165 °C and a pressure of 26 kgf / cm² for 15 minutes to produce a first sheet, and separately, molding the silicone resin composition by hot pressing at 165 °C and a pressure of 0.1 kgf / cm² for 15 minutes to produce a second sheet; 2) Curing the first sheet and the second sheet at 150 °C for 2 hours to produce a first sheet sample and a second sheet sample, respectively; 3) Measuring the thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample at 25 °C according to ISO 22007-2; 4) Calculating the thermal conductivity change rate according to the following Equation 2: [Equation 2] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100 where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.

3. The silicone resin composition according to claim 2, wherein the silicone resin composition comprises the organopolysiloxane and the thermal conductive filler in a weight ratio of 20:80 to 5:

95.

4. The silicone resin composition according to claim 2, wherein the thermal conductive filler comprises a first thermal conductive powder and a second thermal conductive powder, the first thermal conductive powder comprises dendritic particles, and the second thermal conductive powder comprises spherical particles.

5. The silicone resin composition according to claim 4, wherein the thermal conductive filler comprises the first thermal conductive powder and the second thermal conductive powder in a weight ratio of 5:95 to 80:

20.

6. The silicone resin composition according to claim 4, wherein the thermal conductive filler comprises the first thermal conductive powder and the second thermal conductive powder in a weight ratio of 5:95 to 50:

50.

7. The silicone resin composition according to claim 4, wherein the first thermal conductive powder has a tapped density of 0.1 g / cm³ to 3.0 g / cm³.

8. The silicone resin composition according to claim 4, wherein the first thermal conductive powder has a specific surface area of 0.2 m² / g to 5.0 m² / g.

9. The silicone resin composition according to claim 2, wherein the silicone resin composition has a thermal conductivity per unit filler weight of 1 W / mK or greater than 1 W / mK calculated by the following Equation 3: [Equation 3] X / Y×10 where X is the thermal conductivity of the first sheet sample or the second sheet sample measured at 25 °C, and Y is the weight percentage of the thermal conductive filler based on the total weight of the silicone resin composition.

10. The silicone resin composition according to claim 2, wherein the first sheet sample or the second sheet sample has a thermal conductivity of 10 W / mK or greater than 10 W / mK measured at 25 °C.

11. A semiconductor device, comprising: A semiconductor package; A heat dissipation component, disposed on the semiconductor package; and A thermal conduction layer, inserted between the semiconductor package and the heat dissipation component, wherein the thermal conduction layer comprises a silicone resin composition, wherein the silicone resin composition comprises an organopolysiloxane and a heat conductive filler, and has a thermal conductivity change rate of 30% or less than 30% when measured by the following measurement method: [Measurement method] 1) The silicone resin composition is molded to produce a first sheet by hot pressing at 165 °C and a pressure of 26 kgf / cm² for 15 minutes, and separately, the silicone resin composition is molded to produce a second sheet by hot pressing at 165 °C and a pressure of 0.1 kgf / cm² for 15 minutes; 2) The first sheet and the second sheet are cured at 150 °C for 2 hours to produce a first sheet sample and a second sheet sample, respectively; 3) Measure the thermal conductivity of the first sheet sample and the thermal conductivity of the second sheet sample at 25 °C according to ISO 22007-2; 4) Calculate the thermal conductivity change rate according to the following Equation 2: [Equation 2] Thermal conductivity change rate (%) = (│TC 26 - TC 0.1 │ / TC 26 ) × 100 where TC 26 is the thermal conductivity (W / mK) of the first sheet sample, and TC 0.1 is the thermal conductivity (W / mK) of the second sheet sample.

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