A method for laser processing a through-hole in glass, laser processing equipment and storage medium

Abstract

The present invention provides a method, laser processing equipment, and storage medium for laser processing a through-hole in glass, specifically as follows: determining the relationship between the diameter of a target hole and the depth direction; determining the relationship between the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified region and the depth direction; determining the relationship between the diameter of the laser-modified region and the depth direction of the material to be processed based on the diameter of the target hole and the increase in the diameter of the through-hole after etching compared to the diameter of the laser-modified region; determining the spatial distribution of the axial light intensity of a Bessel-like beam along the beam transmission direction based on the diameter of the laser-modified region to obtain a shaped Bessel-like beam; and using the shaped Bessel-like beam to modify the material to be processed, and then etching it to obtain a processed material having a target hole. The present invention achieves spatially controllable modification of glass along the depth direction, and combined with a differentiated etching time distribution along the depth direction of the glass, achieves controllable diameter of the glass through-hole along the depth direction.

Description

Technical Field

[0001] The present invention relates to the field of laser shaping processing, and in particular to a method for laser processing a through-hole in a glass, laser processing equipment and a storage medium. Background Art

[0002] Through Glass Via (TGV) is required in a wide range of engineering applications, such as 3D stacked chip adapters, Micro LED glass adapters, and microfluidic laboratories. Therefore, in recent years, academia and industry have attached great importance to the processing and preparation of Through Glass Via.

[0003] Traditional glass processing techniques, such as mechanical drilling, have significant limitations when it comes to fabricating micron-scale, high-aspect-ratio through-holes. This mechanical processing method not only generates significant residual stress in the glass substrate, potentially causing structural damage such as cracking, but also often fails to meet the processing precision required for micro-nano manufacturing.

[0004] In contrast, the ultrafast laser modified composite chemical etching method, with its excellent energy concentration characteristics, precise directionality and controllability, provides a new solution for glass through-hole manufacturing, achieving non-contact, high-precision processing effects, such as Figure 1 shown.

[0005] The ultrafast laser modification combined with chemical etching method can be mainly divided into two steps: laser modification and chemical etching. After the laser modification step, the glass fails to form a complete through hole. Therefore, during the chemical etching step, the etching liquid continuously penetrates from the glass surface to the inside. Due to the different contact time between different parts and the etching liquid, the following will be formed: Figure 1 The through-hole morphology shown in FIG. 1 may affect the through-hole quality. Inhibitors are often used in the prior art to inhibit etching at the inlet and outlet ends, but this still fails to achieve consistent diameters at the inlet, center, and outlet ends of the through-hole.

[0006] In addition, existing processing solutions cannot accurately process special-shaped glass through holes according to design requirements. Summary of the Invention

[0007] To address the shortcomings of the existing technology, the present invention provides a method for laser processing a through-glass hole. Based on the varying depth-direction etching levels of the etching solution, the diameter of the laser-modified region along the depth direction is varied, inversely matching the depth-direction etching level to achieve precise processing of the target hole.

[0008] The present invention achieves the above technical objectives through the following technical means.

[0009] A method for laser processing a through-glass hole comprises the following steps:

[0010] Determine the target hole diameter The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is is a variable;

[0011] Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area under constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as ;

[0012] According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ;

[0013] According to the diameter of the laser modified area , determine the spatial distribution of the intensity of the Bessel-like beam along the beam propagation direction, and obtain the shaped Bessel-like beam;

[0014] Use the shaped Bessel-like beam to modify the material to be processed;

[0015] The modified material to be processed is etched to obtain a target hole.

[0016] Furthermore, the increase in the diameter of the through hole after etching compared to the diameter of the laser modified area is It gradually decreases from both sides of the material to be processed to the inside.

[0017] Furthermore, the increase in the diameter of the through hole after etching compared to the diameter of the laser modified area is determined. The relationship of changes along the depth direction of the material to be processed is as follows:

[0018] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, recorded as T (d);

[0019]

[0020] in: is the attenuation coefficient, is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution;

[0021] Furthermore, the attenuation coefficient Determined by the properties of the etching solution and the chemical properties of the material.

[0022] The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is as follows:

[0023]

[0024] in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0025] Furthermore, the proportionality coefficient Determined by the properties of the etching solution and the chemical properties of the material.

[0026] Furthermore, the first correction value The first correction value increases gradually from both sides of the material to be processed to the inside. Determined by the properties of the etching solution, the chemical properties of the material and other working conditions. The first correction value is obtained through experiments The changing relationship along the depth direction of the material to be processed.

[0027] Furthermore, the diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , the expression is as follows: .

[0028] A laser processing device comprises a processor and a memory, wherein the memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps in the method for laser processing a through-glass hole are executed.

[0029] A storage medium stores a computer program. When the computer program is executed by a processor, the steps of the method for laser processing a through-glass hole are executed.

[0030] The beneficial effects of the present invention are:

[0031] 1. The laser processing method for through-glass holes described in this invention varies the diameter of the laser-modified region along the depth direction based on the varying depth-wise etching extent of the etching solution. This ensures that the diameter of the laser-modified region along the depth direction is inversely matched to the depth-wise etching extent, thereby achieving precise processing of the target hole. This inverse matching can be understood as follows: because the etching rate of the modified region is higher than that of the unmodified region, and the modified region is fully etched, the greater the etching extent at a specific depth, the smaller the diameter of the laser-modified region is set; conversely, the smaller the etching extent at a specific depth, the larger the diameter of the laser-modified region is set. This matching ensures that every depth position is appropriately etched during the etching process, thereby achieving uniform variation in through-hole diameter.

[0032] 2. The laser processing method for glass through-holes of the present invention effectively suppresses the occurrence of the bell-mouth phenomenon by optimizing the diameter distribution of the laser-modified area, and significantly improves the shape accuracy of the through-holes.

[0033] 3. The laser through-glass hole processing method of the present invention is suitable for processing target holes of various shapes, not limited to straight holes, but also drum-shaped holes, gradient holes or stepped holes. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. The drawings described below are some embodiments of the present invention. For ordinary technicians in this field, it is obvious that other drawings can be obtained based on these drawings without paying any creative work.

[0035] Figure 1 Schematic diagram of conventional Bessel beam processing of glass through holes.

[0036] Figure 2 This is a schematic diagram of processing uniform through-glass holes using the laser through-glass processing method of the present invention.

[0037] Figure 3 This is a schematic diagram of processing a drum-shaped through-glass hole using the laser through-glass hole processing method of the present invention.

[0038] Figure 4 This is a schematic diagram of processing a gradually expanding through-glass hole using the laser through-glass hole processing method of the present invention.

[0039] In the picture:

[0040] 1-Material to be processed; 2-Through hole; 3-Inlet end; 4-Center end; 5-Outlet end. DETAILED DESCRIPTION

[0041] The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and are not to be construed as limiting the present invention.

[0042] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "depth", "up", "down", "axial", "radial", "vertical", "horizontal", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0043] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0044] The laser processing method for through-glass holes of the present invention comprises the following steps:

[0045] S1: Determine the diameter of the target hole The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is 3 is a variable;

[0046] S2: Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area under constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as ; The details are as follows:

[0047] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, recorded as T (d);

[0048]

[0049] in: is the attenuation coefficient, which is the exposure rate, i.e., the exposure time per unit depth; is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution;

[0050] Furthermore, the attenuation coefficient Determined by the properties of the etching solution and the chemical properties of the material.

[0051] The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is as follows:

[0052]

[0053] in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0054] Furthermore, the proportionality coefficient Determined by the properties of the etching solution and the chemical properties of the material.

[0055] Furthermore, the first correction value The first correction value increases gradually from both sides of the material to be processed to the inside. Determined by the properties of the etching solution, the chemical properties of the material and other working conditions. The first correction value is obtained through experiments The changing relationship along the depth direction of the material to be processed.

[0056] S3: According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ; Make the diameter of the laser modified area along the depth direction The reverse matching of the etching degree along the depth direction enables precise processing to obtain the target hole. The reverse matching can be understood as the fact that since the etching rate of the modified area is higher than that of the unmodified area, and the modified area is completely etched, the greater the etching degree at a specific depth, the smaller the diameter of the laser-modified area is set; conversely, the smaller the etching degree at a specific depth, the larger the diameter of the laser-modified area is set. This matching ensures that each depth position is etched appropriately during the etching process, thereby achieving a uniform change in the through-hole diameter.

[0057] The diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , the expression is as follows: .

[0058] S4: According to the diameter of the laser modified area , determine the spatial distribution of the intensity of the Bessel-like beam along the beam propagation direction, and obtain the shaped Bessel-like beam;

[0059] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0060] S6: Etching the modified material to be processed to obtain a target hole.

[0061] Example 1

[0062] like Figure 2 As shown, in Example 1, the material 1 to be processed is quartz glass, and the thickness of the material 1 to be processed is 500 μm. In Example 1, the aperture of the target hole is 20 μm, and a through-hole structure with uniform aperture is required to be achieved. The method for laser processing a through-hole in glass in Example 1 includes the following steps:

[0063] S1: Determine the diameter of the target hole The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is 3 is a variable; =20μm.

[0064] S2: Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area under constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as ; The details are as follows:

[0065] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, recorded as T (d);

[0066]

[0067] in: is the attenuation coefficient, which is the exposure rate, i.e., the exposure time per unit depth; is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution;

[0068] The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The surface gradually decreases from both sides of the material to be processed to the inside. The relationship of the change along the depth direction of the material to be processed is as follows:

[0069]

[0070] in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0071] In Example 1, the etching solution is hydrofluoric acid solution. 500μm, 20 minutes, 1 / 25 min / μm, is 10μm / min; the concentration of the etching solution is 5%.

[0072]

[0073]

[0074] The first correction value It increases linearly from both sides of the material to be processed to the inside.

[0075] In the above formula The choice is determined by the specific working conditions.

[0076] S3: According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ;

[0077] The diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , the expression is as follows: .

[0078] S4: The laser power selected in Example 1 is 30W, the pulse width is 100ps, and the frequency is 80kHz. The required focal depth for processing is 500μm. Based on the 50× beam reduction ratio of the selected 4f system, the focal depth length before beam reduction is calculated. The focal depth before beam reduction is the focal depth after beam reduction multiplied by the square of the beam reduction ratio, which is calculated to be 1250mm. In view of the technical difficulty of intensity modulation in the edge area of ​​the focal depth, the focal depth before beam reduction is set to 1500mm. Based on the diameter of the laser modified area, the focal depth before beam reduction is 1500mm. Based on the phase hologram of an equivalent axicon with a focal depth of 1500 mm, the particle swarm algorithm is used to solve the phase hologram of the light intensity distribution on the target axis along the beam propagation direction. After phase modulation, the beam is beam-contracted by a 4f system to obtain a shaped Bessel-like beam. The distribution of the on-axis light intensity along the beam propagation direction is shown in the figure below. Figure 2 shown.

[0079] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0080] S6: Immerse the modified material in a 5% hydrofluoric acid solution and begin etching. The etching time is set to 20 minutes and the etching temperature is set to 30°C. After etching, the glass substrate is immediately rinsed with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface and obtain the target hole.

[0081] Example 2

[0082] like Figure 3 As shown, in Example 2, the material 1 to be processed is soda-lime glass, and the thickness of the material 1 to be processed is 500 μm. In Example 2, the apertures of the inlet end 3 and the outlet end 4 of the target hole are 18 μm, and the aperture of the center end 4 is 20 μm. The method for laser processing a through-glass hole in Example 2 includes the following steps:

[0083] S1: Determine the diameter of the target hole The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is 3 is a variable; is a continuous curve.

[0084] S2: Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area under constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as ; The details are as follows:

[0085] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, recorded as T (d);

[0086]

[0087] in: is the attenuation coefficient, which is the exposure rate, i.e., the exposure time per unit depth; is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution;

[0088] The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The surface gradually decreases from both sides of the material to be processed to the inside. The relationship of the change along the depth direction of the material to be processed is as follows:

[0089]

[0090] in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0091] In Example 2, the etching solution is hydrofluoric acid solution. 500μm, 20 minutes, 1 / 25 min / μm, is 10μm / min; the concentration of the etching solution is 5%.

[0092]

[0093]

[0094] The first correction value It increases linearly from both sides of the material to be processed to the inside.

[0095] In the above formula The choice is determined by the specific working conditions.

[0096] S3: According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ;

[0097] The diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , the expression is as follows: .

[0098] S4: The laser power selected in Example 2 is 30W, the pulse width is 100ps, and the frequency is 80kHz. The required focal depth for processing is 500μm. Based on the 50× beam reduction ratio of the selected 4f system, the focal depth length before beam reduction is calculated. The focal depth before beam reduction is the focal depth after beam reduction multiplied by the square of the beam reduction ratio, which is calculated to be 1250mm. In view of the technical difficulty of intensity modulation in the edge area of ​​the focal depth, the focal depth before beam reduction is set to 1500mm. Based on the diameter of the laser modified area, the focal depth before beam reduction is 1500mm. Based on the phase hologram of an equivalent axicon with a focal depth of 1500 mm, the particle swarm algorithm is used to solve the phase hologram of the light intensity distribution on the target axis along the beam propagation direction. After phase modulation, the beam is beam-contracted by a 4f system to obtain a shaped Bessel-like beam. The distribution of the on-axis light intensity along the beam propagation direction is shown in the figure below. Figure 3 shown.

[0099] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0100] S6: Immerse the modified material in a 5% hydrofluoric acid solution and begin etching. The etching time is set to 20 minutes and the etching temperature is set to 30°C. After etching, the glass substrate is immediately rinsed with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface and obtain the target hole.

[0101] Example 3

[0102] like Figure 4 As shown, in Example 3, the material 1 to be processed is borosilicate glass, and the thickness of the material 1 to be processed is 500 μm. In Example 3, the target hole is a gradually expanding hole, the aperture of the inlet end 3 is 15 μm, the aperture of the outlet end 4 is 25 μm, and the aperture increases linearly along the depth direction. The method for laser processing a through-hole in glass in Example 3 includes the following steps:

[0103] S1: Determine the diameter of the target hole The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is 3 is a variable;

[0104] S2: Determine the increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area under constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as ; The details are as follows:

[0105] Determine the actual exposure time of the material to be processed to the etching solution along the depth direction, recorded as T (d);

[0106]

[0107] in: is the attenuation coefficient, which is the exposure rate, i.e., the exposure time per unit depth; is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution;

[0108] The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The surface gradually decreases from both sides of the material to be processed to the inside. The relationship of the change along the depth direction of the material to be processed is as follows:

[0109]

[0110] in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value.

[0111] In Example 3, the etching solution is hydrofluoric acid solution. =500μm, 20 minutes, 1 / 25min / μm, is 8μm / min; the concentration of the etching solution is 7%.

[0112]

[0113]

[0114] The first correction value It increases linearly from both sides of the material to be processed to the inside.

[0115] In the above formula The choice is determined by the specific working conditions.

[0116] S3: According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ;

[0117] The diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , the expression is as follows: .

[0118] S4: The laser power selected in Example 3 is 30W, the pulse width is 100ps, and the frequency is 80kHz. The required focal depth for processing is 500μm. Based on the 50× beam reduction ratio of the selected 4f system, the focal depth length before beam reduction is calculated. The focal depth before beam reduction is the focal depth after beam reduction multiplied by the square of the beam reduction ratio, which is calculated to be 1250mm. In view of the technical difficulty of intensity modulation in the edge area of ​​the focal depth, the focal depth before beam reduction is set to 1500mm. Based on the diameter of the laser modified area, the focal depth before beam reduction is 1500mm. Based on the phase hologram of an equivalent axicon with a focal depth of 1500 mm, the particle swarm algorithm is used to solve the phase hologram of the light intensity distribution on the target axis along the beam propagation direction. After phase modulation, the beam is beam-contracted by a 4f system to obtain a shaped Bessel-like beam. The distribution of the on-axis light intensity along the beam propagation direction is shown in the figure below. Figure 4 shown.

[0119] S5: Use the shaped Bessel-like beam to modify the material to be processed;

[0120] S6: Completely immerse the modified material in a 7% hydrofluoric acid solution and begin etching. The etching time is set to 20 minutes and the etching temperature is 30°C. After etching, the glass substrate is immediately rinsed with a large amount of deionized water to remove the residual hydrofluoric acid solution on the surface and obtain the target hole.

[0121] A laser processing device includes a processor and a memory, wherein the memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps of the method for laser processing a through-glass hole are executed.

[0122] A storage medium stores a computer program, which runs the steps of the method for laser processing a through-glass hole when executed by a processor.

[0123] It should be understood that although this specification is described according to various embodiments, not every embodiment contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

[0124] The series of detailed descriptions listed above are only specific descriptions of feasible embodiments of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent embodiments or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for laser processing a through-glass hole, characterized in that: The steps include: Determine the target hole diameter The relationship of the change along the depth direction of the material to be processed is recorded as , where the vertical depth from the material inlet end is is a variable; Determine the increase in the diameter of the etched through hole compared to the diameter of the laser-modified area at a constant temperature The relationship of the change along the depth direction of the material to be processed is recorded as , as follows: Determine the time that the material to be processed is actually exposed to the etching solution along the depth direction, recorded as T (d); ； in: is the attenuation coefficient, is the thickness of the material to be processed; The length of time the material to be processed is immersed in the etching solution; The attenuation coefficient Determined by the properties of the etching solution and the chemical properties of the material; The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is as follows: ； in: is the proportional coefficient, which indicates the effect of exposure time on the percentage concentration of etching solution. The influence of, the unit is μm / min; is the percentage concentration of the etching solution; is the first correction value; The first correction value Determined by the following formula: ； According to the diameter of the target hole The increase in the diameter of the through hole after etching compared to the diameter of the laser modified area , determine the diameter of the laser modified area The relationship of the change along the depth direction of the material to be processed is recorded as ; According to the diameter of the laser modified area , determine the spatial distribution of the intensity of the Bessel-like beam along the beam propagation direction, and obtain the shaped Bessel-like beam; Use the shaped Bessel-like beam to modify the material to be processed; The modified material to be processed is etched to obtain a target hole.

2. The method for laser processing a through-glass hole according to claim 1, wherein: The increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area It gradually decreases from both sides of the material to be processed to the inside.

3. The method for laser processing a through-glass hole according to claim 1, wherein: The first correction value The first correction value gradually increases from both sides of the material to be processed inward. Determined by the properties of the etching solution, the chemical properties of the material and other working conditions.

4. The method for laser processing a through-glass hole according to claim 1, wherein: The diameter of the laser modified area =Diameter of target hole -The increase in the diameter of the through hole after etching compared to the diameter of the laser-modified area , the expression is as follows: .

5. A laser processing device, characterized in that: The method comprises a processor and a memory, wherein the memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps of the method for laser processing a through-glass hole according to any one of claims 1 to 4 are executed.

6. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for laser processing a through-glass hole according to any one of claims 1 to 4 are executed.

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