Capacitor aging method, device, system and electronic equipment

Abstract

The present application discloses a capacitor aging method, device, system, and electronic equipment, belonging to the field of capacitor aging. The capacitor aging method is applied to non-polar electrolytic capacitors. When the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage of each boost stage are determined based on the operating voltage; then the capacitor is aged based on the number of boost stages and the aging voltage. That is, when the capacitor is a medium- and high-voltage capacitor, multi-stage boosting is used for aging to avoid excessive increase in the aging voltage of the capacitor during aging, which causes excessive heat in the capacitor and leads to capacitor failure. The method can age medium- and high-voltage capacitors and improve the quality of medium- and high-voltage capacitors.

Description

Technical Field

[0001] The present application relates to the technical field of capacitor aging, and in particular, to a capacitor aging method, device, system, and electronic equipment. Background Art

[0002] Capacitors are common components in electronic circuits, performing electrical functions such as filtering, bypassing, coupling, decoupling, and phase shifting. Non-polar electrolytic capacitors are used in speaker crossover circuits, television S-correction circuits, and single-phase motor starting circuits. Because they lack positive and negative polarity, these capacitors can be used flexibly in AC circuits without the risk of damage from incorrect polarity. Non-polar electrolytic capacitors typically have a smaller capacitance, making them more suitable for high-frequency filtering circuits. While their structure, dielectric, and performance differ from those of polarized electrolytic capacitors, they play a key role in certain applications, such as audio crossovers, ensuring high sound quality, clarity, and fidelity.

[0003] Capacitors may be damaged during the production process, resulting in a decrease in their electrical performance. Therefore, aging treatment is required to repair these damages under high temperature and high pressure conditions, restore the inherent electrical performance of the capacitor, and make it better for use.

[0004] However, existing capacitor aging methods are only applicable to low-voltage products and are not applicable to medium- and high-voltage products. They may even cause excessive internal heat in high-voltage products, leading to product failure. Summary of the Invention

[0005] In order to overcome the shortcomings of the existing technology, the present application provides a capacitor aging method, device, system and electronic equipment to solve the problem that the existing capacitor aging method is only applicable to low-voltage products and is not applicable to medium and high voltage products, and even causes excessive internal heat in high-voltage products, leading to product failure.

[0006] The technical solution adopted by this application to solve its technical problems is:

[0007] In a first aspect, a capacitor aging method is provided, which is applied to a non-polar electrolytic capacitor, the method comprising:

[0008] When the operating voltage of the capacitor is higher than a first preset voltage, determining the number of boosting stages and the aging voltage of each boosting stage based on the operating voltage, wherein the higher the operating voltage, the more the number of boosting stages;

[0009] Aging the capacitor based on the number of boost stages and the aging voltage, wherein determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage comprises:

[0010] The following formula is used to determine the number of boost stages;

[0011] N=f[a(WV-U)+b];

[0012] Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

[0013] As an optional implementation of the present application, aging the capacitor based on the number of boost stages and the aging voltage includes:

[0014] Normal temperature boost: controlling the temperature during aging to be a first preset temperature, and sequentially boosting the voltage to a first target aging voltage according to the number of boost stages and the aging voltage, wherein the first target aging voltage is greater than the operating voltage;

[0015] First normal temperature stabilization: maintain the aging voltage at the first target aging voltage for the first preset time;

[0016] High-temperature aging: controlling the temperature during aging to change from the first preset temperature to the second preset temperature, and controlling the aging voltage to change from the first target aging voltage to the second target aging voltage, and maintaining the aging voltage at the second target aging voltage for a second preset time; wherein the second preset temperature is greater than the first preset temperature, the second target aging voltage is greater than or equal to the operating voltage, and the second preset time is greater than the first preset time;

[0017] Second normal temperature aging: controlling the temperature during aging to change from the second preset temperature back to the first preset temperature, controlling the aging voltage to change from the second target aging voltage to the first target aging voltage, and maintaining the aging voltage at the first target aging voltage for a third preset time, wherein the second preset time is greater than the third preset time.

[0018] As an optional implementation of this application, the following is also included:

[0019] The first target aging voltage is greater than or equal to the second target aging voltage.

[0020] As an optional implementation of this application, the following is also included:

[0021] When boosting at room temperature, first controlling the aging voltage to be forward-boosted to the aging voltage corresponding to the boosting stage;

[0022] Maintaining the forward aging voltage unchanged for a fourth preset time period;

[0023] Controlling the aging voltage to reversely boost to an aging voltage corresponding to the boosting stage;

[0024] The reverse aging voltage is maintained unchanged for a fourth preset time period.

[0025] As an optional implementation of this application, the following is also included:

[0026] The fourth preset time duration is determined based on the operating voltage. The higher the operating voltage is, the longer the fourth preset time duration is.

[0027] As an optional implementation of this application, the following is also included:

[0028] During the first normal temperature aging, high temperature aging and second normal temperature aging, the direction is reversed once at intervals of a preset period. The direction is reversed by controlling the aging voltage from forward to reverse, or from reverse to forward.

[0029] As an optional implementation of this application, the following is also included:

[0030] The first preset interval period is smaller than the second preset interval period, wherein the first preset interval period is the preset interval period during the first or second normal temperature aging; the second preset interval period is the preset interval period during high temperature aging.

[0031] In a second aspect, a capacitor aging device is provided, which is applied to a non-polar electrolytic capacitor, and the capacitor aging device includes:

[0032] a stage determination module, configured to determine, when the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage of each boost stage based on the operating voltage, wherein the higher the operating voltage, the greater the number of boost stages;

[0033] A capacitor aging module is configured to age the capacitor based on the number of boost stages and the aging voltage, wherein determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage comprises:

[0034] The following formula is used to determine the number of boost stages;

[0035] N=f[a(WV-U)+b];

[0036] Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

[0037] In a third aspect, a capacitor aging system is provided, comprising:

[0038] at least one processor and at least one memory;

[0039] The memory stores executable instructions of the processor;

[0040] The processor is configured to execute any one of the above capacitor aging methods.

[0041] In a fourth aspect, an electronic device is provided, comprising: a memory;

[0042] The memory stores a computer program or instruction, and when the computer program or instruction is executed by the processor, the steps of any one of the above capacitor aging methods are implemented.

[0043] Beneficial effects:

[0044] The technical solution of the present application provides a capacitor aging method, device, system, and electronic device. The capacitor aging method is applied to non-polar electrolytic capacitors. When the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage of each boost stage are determined based on the operating voltage; then, the capacitor is aged based on the number of boost stages and the aging voltage. That is, when the capacitor is a medium- and high-voltage capacitor, multi-stage boosting is used for aging to avoid excessive increase in the aging voltage of the capacitor during aging, which causes excessive heat in the capacitor and leads to capacitor failure. The method can age medium- and high-voltage capacitors and improve their quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0046] Figure 1 This is a flow chart of a capacitor aging method provided in an embodiment of the present application;

[0047] Figure 2 This is a flow chart of a specific capacitor aging method provided in an embodiment of the present application;

[0048] Figure 3 This is a flow chart of a 160V 10μF capacitor aging method provided in an embodiment of the present application;

[0049] Figure 4 This is a structural diagram of a capacitor aging device provided in an embodiment of the present application;

[0050] Figure 5 This is a structural diagram of a capacitor aging system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0051] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions of this application are described in detail below with reference to the accompanying drawings and examples. Obviously, the described embodiments are only some of the embodiments of this application, rather than all of them. Based on the embodiments in this application, all other implementation methods obtained by ordinary technicians in this field without making any creative work are within the scope of protection of this application.

[0052] Aging is an important step in the capacitor production process. Through standardized and normalized aging processes, it can be ensured that each batch of capacitors meets the predetermined quality and performance standards and meets market demand.

[0053] Aging is typically performed after the production of new capacitors. By applying certain voltage and temperature conditions, it accelerates the chemical reactions and physical changes within the capacitor, resulting in more stable performance. During the aging process, the capacitor may experience a brief performance drop, but as aging is complete, its performance will gradually return to normal levels, or even reach optimal levels. Aging helps improve the reliability and service life of capacitors, reducing the risk of failures caused by unstable performance during use.

[0054] Existing aging methods directly increase the voltage to a specified value and then perform aging until the aging process is complete. However, when applied to medium- and high-voltage capacitors, due to the high voltage required for aging, this can cause the voltage to increase too quickly, leading to excessive heat inside the capacitor and eventually causing failure.

[0055] To solve this problem, refer to Figure 1 , an embodiment of the present application provides a capacitor aging method, which is applied to a non-polar electrolytic capacitor, and the method includes:

[0056] S11: when the operating voltage of the capacitor is higher than a first preset voltage, determining the number of boosting stages and the aging voltage of each boosting stage based on the operating voltage, wherein the higher the operating voltage, the more the number of boosting stages;

[0057] S12: Aging the capacitor based on the number of boosting stages and the aging voltage, wherein determining the number of boosting stages and the aging voltage of each boosting stage based on the operating voltage includes:

[0058] The following formula is used to determine the number of boost stages;

[0059] N=f[a(WV-U)+b];

[0060] Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

[0061] The capacitor aging method provided in the embodiments of the present application is applied to non-polar electrolytic capacitors. When the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage for each boost stage are determined based on the operating voltage. The capacitor is then aged based on the number of boost stages and the aging voltage. Specifically, when the capacitor is a medium- or high-voltage capacitor, multi-stage boosting is used for aging, preventing the capacitor's aging voltage from increasing too much during aging, which could lead to excessive heat buildup and capacitor failure. This method can be used to age medium- and high-voltage capacitors, improving their quality.

[0062] refer to Figure 2 The present application provides a specific capacitor aging method, which is applied to non-polar electrolytic capacitors, and the method comprises:

[0063] When the operating voltage of the capacitor is higher than the first preset voltage (i.e., when the capacitor is a medium- or high-voltage product), the number of boosting stages and the aging voltage of each boosting stage are determined based on the operating voltage, wherein the higher the operating voltage, the more boosting stages there are;

[0064] It should be noted that the operating voltage is an important parameter of the capacitor. It refers to the maximum voltage value at which the capacitor can operate continuously and is the upper limit of the voltage at which the capacitor can operate safely and stably in the circuit.

[0065] It is understandable that when the operating voltage of the capacitor is not higher than (i.e., less than or equal to) the first preset voltage, it means that the capacitor is a low-voltage capacitor and there is no need to perform multi-stage boost aging (one-stage aging (i.e., conventional aging method) is sufficient. Multi-stage boost aging takes a long time and the final capacitor quality is not much different from that of one-stage aging).

[0066] In one embodiment, the number of boost stages and the aging voltage of each boost stage determined based on the operating voltage can be determined using a preset table. The table records the number of boost stages and the aging voltage of each boost stage for each operating voltage. For example, as shown in Table 1:

[0067] Table 1

[0068] Working voltage WV Number of boost stages Aging voltage at each boost stage U1-U2 3 u1,u2,WV+(10±5) U2-U3 4 u3, u4, u5, WV+(10±5) U3-U4 5 u6, u7, u8, u9, WV+(10±5) …… …… ……

[0069] Among them, u1 is smaller than u2; u3 is smaller than u4, u4 is smaller than u5; u6 is smaller than u7, u7 is smaller than u8, and u8 is smaller than u9.

[0070] In another embodiment, determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage includes:

[0071] The following formula is used to determine the number of boost stages;

[0072] N=f[a(WV-U)+b];

[0073] Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

[0074] It should be noted that for capacitors with the same operating voltage, a smaller number of boost stages can result in a higher instantaneous voltage boost, potentially damaging the capacitor. A larger number of boost stages, on the other hand, can lead to more voltage boosts, a longer aging time, low aging efficiency, and energy waste. Based on this, the inventors tested capacitors made of the same material but with different operating voltages to determine their optimal number of boost stages. They then performed a fitting calculation using operating voltage as the independent variable and the number of boost stages as the dependent variable, resulting in the formula for this embodiment.

[0075] In one embodiment, the first preset voltage is equal to the second preset voltage.

[0076] The capacitor is aged based on the number of boosting stages and the aging voltage.

[0077] In one embodiment, aging the capacitor based on the number of boost stages and the aging voltage includes:

[0078] Normal temperature boost: controlling the temperature during aging to be a first preset temperature, and sequentially boosting the voltage to a first target aging voltage according to the number of boost stages and the aging voltage, wherein the first target aging voltage is greater than the operating voltage;

[0079] First normal temperature stabilization: maintain the aging voltage at the first target aging voltage for the first preset time;

[0080] High-temperature aging: controlling the temperature during aging to change from the first preset temperature to the second preset temperature, and controlling the aging voltage to change from the first target aging voltage to the second target aging voltage, and maintaining the aging voltage at the second target aging voltage for a second preset time; wherein the second preset temperature is greater than the first preset temperature, the second target aging voltage is greater than or equal to the operating voltage, and the second preset time is greater than the first preset time;

[0081] Second normal temperature aging: controlling the temperature during aging to change from the second preset temperature back to the first preset temperature, controlling the aging voltage to change from the second target aging voltage to the first target aging voltage, and maintaining the aging voltage at the first target aging voltage for a third preset time, wherein the second preset time is greater than the third preset time.

[0082] As a preferred implementation of this embodiment, the first target aging voltage is greater than or equal to the second target aging voltage. During aging, the capacitor must maintain a thermal equilibrium. If the voltage remains at the aging voltage at room temperature when the capacitor enters the high-temperature range, the thermal equilibrium of the product will be disrupted, causing thermal failure, manifested as valve opening. Therefore, the voltage must be reduced when entering the high-temperature range.

[0083] Preferably, when boosting at room temperature, the aging voltage is first controlled to be forward boosted to the aging voltage corresponding to the boosting stage;

[0084] Maintaining the forward aging voltage unchanged for a fourth preset time period;

[0085] Controlling the aging voltage to reversely boost to an aging voltage corresponding to the boosting stage;

[0086] The reverse aging voltage is maintained unchanged for a fourth preset time period.

[0087] Because the solution of the embodiment of the present application is applied to a non-polar electrolytic capacitor, voltage must be applied to both ends to ensure that the capacitor's performance is consistent regardless of whether the current flows in the forward or reverse direction. In addition, the forward and reverse directions described in the embodiment of the present application are not strictly defined. Connecting either end of the capacitor to the positive voltage pole can be used as the forward direction, while connecting the other end to the positive voltage pole can be used as the reverse direction.

[0088] Among them, the fourth preset time length is a fixed value.

[0089] In a preferred embodiment, the fourth preset time duration is determined based on the operating voltage. The higher the operating voltage, the longer the fourth preset time duration. This is because the higher the operating voltage, the higher the aging voltage at each stage. To ensure sufficient aging of the capacitor, a longer maintenance time is required.

[0090] In addition, during the first normal temperature aging, high temperature aging, and second normal temperature aging, the voltage is reversed once every preset period. Reversing refers to controlling the aging voltage from forward to reverse, or vice versa. Reversing the aging process ensures that the capacitor can be aged in both reverse directions, ensuring that the final capacitor has consistent performance in both forward and reverse directions. Failure to reverse the direction may result in good forward performance but poor reverse performance.

[0091] As a preferred implementation of this application, the first preset interval period is shorter than the second preset interval period. The first preset interval period is the preset interval period during the first or second normal temperature aging process; the second preset interval period is the preset interval period during high temperature aging. Because aging takes longer at high temperatures, the switching period is longer at high temperatures.

[0092] In order to more clearly illustrate this application solution, a 160V10μF product is selected for actual illustration: the product adopts segmented boost, which is specifically divided into three sections, namely 80±5V--130±5V---170±5V; the room temperature aging voltage is 170±5V, and the high temperature aging voltage is 165±5V;

[0093] like Figure 3 As shown:

[0094] Normal temperature boost stage: staged boost, the specific operation is as follows:

[0095] Boost the voltage to 80±5V in the forward direction and maintain the voltage for 20±5min until it stabilizes;

[0096] Boost the voltage in the reverse direction to 80±5V and maintain the voltage for 20±5min until it stabilizes;

[0097] Boost the voltage to 130±5V in the forward direction and maintain the voltage for 20±5min until it stabilizes;

[0098] Boost the voltage in reverse direction to 130±5V and maintain the voltage for 20±5min until it stabilizes;

[0099] Boost the voltage to 170±5V in the forward direction and maintain the voltage for 20±5min until it stabilizes;

[0100] Boost the voltage in reverse direction to 170±5V and maintain the voltage for 20±5min until it stabilizes;

[0101] Room temperature aging: room temperature aging for 1 hour, switching once every half an hour

[0102] High temperature aging: high temperature aging for 8 hours, switching once every hour

[0103] Room temperature aging: room temperature aging for 1 hour, switching once every half an hour

[0104] After the aged electrolytic capacitors are tested for parameter characteristics and qualified products are selected, they can be installed on the corresponding modules for use.

[0105] Herein, normal temperature refers to a temperature of 25±5°C.

[0106] The present application provides an aging method for medium- and high-voltage non-polar aluminum electrolytic capacitors.

[0107] This method has the following characteristics:

[0108] 1. According to the different working voltages of the products, the products are aged in different voltage segments; this allows the products to repair more oxide film defects during the aging process and extend their service life.

[0109] 2. Both ends of the product are kept for the corresponding aging time in each voltage range, which can effectively reduce the difference in leakage current at both ends.

[0110] Based on the same inventive concept, Figure 4 As shown, the present application provides a capacitor aging device 40, which is applied to non-polar electrolytic capacitors. The capacitor aging device 40 includes:

[0111] a stage determination module 41 for determining, when the operating voltage of the capacitor is higher than a first preset voltage (i.e., when the capacitor is a medium- or high-voltage product), the number of boost stages and the aging voltage of each boost stage based on the operating voltage, wherein the higher the operating voltage, the greater the number of boost stages;

[0112] It should be noted that the operating voltage is an important parameter of the capacitor. It refers to the maximum voltage value at which the capacitor can operate continuously and is the upper limit of the voltage at which the capacitor can operate safely and stably in the circuit.

[0113] It is understandable that when the operating voltage of the capacitor is not higher than (i.e., less than or equal to) the first preset voltage, it means that the capacitor is a low-voltage capacitor and there is no need to perform multi-stage boost aging (one-stage aging (i.e., conventional aging method) is sufficient. Multi-stage boost aging takes a long time and the final capacitor quality is not much different from that of one-stage aging).

[0114] In one embodiment, the number of boost stages and the aging voltage of each boost stage determined based on the operating voltage can be determined using a preset table that records the number of boost stages and the aging voltage of each boost stage for each operating voltage.

[0115] In another embodiment, determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage includes:

[0116] The following formula is used to determine the number of boost stages;

[0117] N=f[a(WV-U)+b];

[0118] Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

[0119] The capacitor aging module 42 is configured to age the capacitor based on the number of boost stages and the aging voltage.

[0120] In one embodiment, aging the capacitor based on the number of boost stages and the aging voltage includes:

[0121] Normal temperature boost: controlling the temperature during aging to be a first preset temperature, and sequentially boosting the voltage to a first target aging voltage according to the number of boost stages and the aging voltage, wherein the first target aging voltage is greater than the operating voltage;

[0122] First normal temperature stabilization: maintain the aging voltage at the first target aging voltage for the first preset time;

[0123] High-temperature aging: controlling the temperature during aging to change from the first preset temperature to the second preset temperature, and controlling the aging voltage to change from the first target aging voltage to the second target aging voltage, and maintaining the aging voltage at the second target aging voltage for a second preset time; wherein the second preset temperature is greater than the first preset temperature, the second target aging voltage is greater than or equal to the operating voltage, and the second preset time is greater than the first preset time;

[0124] Second normal temperature aging: controlling the temperature during aging to change from the second preset temperature back to the first preset temperature, controlling the aging voltage to change from the second target aging voltage to the first target aging voltage, and maintaining the aging voltage at the first target aging voltage for a third preset time, wherein the second preset time is greater than the third preset time.

[0125] As a preferred implementation of this embodiment, the first target aging voltage is greater than or equal to the second target aging voltage. During aging, the capacitor must maintain a thermal equilibrium. If the voltage remains at the aging voltage at room temperature when the capacitor enters the high-temperature range, the thermal equilibrium of the product will be disrupted, causing thermal failure, manifested as valve opening. Therefore, the voltage must be reduced when entering the high-temperature range.

[0126] Preferably, when boosting at room temperature, the aging voltage is first controlled to be forward boosted to the aging voltage corresponding to the boosting stage;

[0127] Maintaining the forward aging voltage unchanged for a fourth preset time period;

[0128] Controlling the aging voltage to reversely boost to an aging voltage corresponding to the boosting stage;

[0129] The reverse aging voltage is maintained unchanged for a fourth preset time period.

[0130] Because the solution of the embodiment of the present application is applied to a non-polar electrolytic capacitor, voltage must be applied to both ends to ensure that the capacitor's performance is consistent regardless of whether the current flows in the forward or reverse direction. In addition, the forward and reverse directions described in the embodiment of the present application are not strictly defined. Connecting either end of the capacitor to the positive voltage pole can be used as the forward direction, while connecting the other end to the positive voltage pole can be used as the reverse direction.

[0131] Among them, the fourth preset time length is a fixed value.

[0132] In a preferred embodiment, the fourth preset time duration is determined based on the operating voltage. The higher the operating voltage, the longer the fourth preset time duration. This is because the higher the operating voltage, the higher the aging voltage at each stage. To ensure sufficient aging of the capacitor, a longer maintenance time is required.

[0133] In addition, during the first normal temperature aging, high temperature aging, and second normal temperature aging, the voltage is reversed once every preset period. Reversing refers to controlling the aging voltage from forward to reverse, or vice versa. Reversing the aging process ensures that the capacitor can be aged in both reverse directions, ensuring that the final capacitor has consistent performance in both forward and reverse directions. Failure to reverse the direction may result in good forward performance but poor reverse performance.

[0134] As a preferred implementation of this application, the first preset interval period is shorter than the second preset interval period. The first preset interval period is the preset interval period during the first or second normal temperature aging process; the second preset interval period is the preset interval period during high temperature aging. Because aging takes longer at high temperatures, the switching period is longer at high temperatures.

[0135] The capacitor aging device provided in an embodiment of the present application is applied to non-polar electrolytic capacitors. When the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage for each boost stage are determined based on the operating voltage. The capacitor is then aged based on the number of boost stages and the aging voltage. Specifically, when the capacitor is a medium- or high-voltage capacitor, multi-stage boosting is used for aging, preventing the capacitor's aging voltage from increasing too much during aging, which could lead to excessive heat buildup and capacitor failure. This allows for aging of medium- and high-voltage capacitors, improving their quality.

[0136] Based on the same inventive concept, Figure 5 As shown, the present application also provides a capacitor aging system 50, comprising:

[0137] at least one processor 51 and at least one memory 52;

[0138] The memory stores executable instructions of the processor;

[0139] The processor is configured to execute the capacitor aging method provided in the above embodiment.

[0140] The capacitor aging system provided by the embodiments of the present application stores executable instructions for a processor in a memory. When the executable instructions are executed, the processor determines the number of boost stages and the aging voltage for each boost stage based on the operating voltage of the capacitor when the operating voltage is higher than a first preset voltage. The capacitor is then aged based on the number of boost stages and the aging voltage. Specifically, for medium- and high-voltage capacitors, multi-stage boosting is used for aging, preventing excessive increases in the aging voltage during aging, which could lead to excessive heat buildup and capacitor failure. This allows for aging of medium- and high-voltage capacitors, improving their quality.

[0141] Based on the same inventive concept, the present application also provides an electronic device, comprising: a memory;

[0142] The memory stores a computer program or instruction, and when the computer program or instruction is executed by the processor, the steps of any one of the above capacitor aging methods are implemented.

[0143] It should be noted that, in the description of this application, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance. In addition, in the description of this application, unless otherwise specified, the meaning of "plurality" refers to at least two.

[0144] It can be understood that the same or similar parts of the above embodiments can be referenced to each other, and the contents not described in detail in some embodiments can refer to the same or similar contents in other embodiments.

Claims

1. A capacitor aging method, characterized in that: Applied to non-polar electrolytic capacitors, the method includes: When the operating voltage of the capacitor is higher than a first preset voltage, determining the number of boosting stages and the aging voltage of each boosting stage based on the operating voltage, wherein the higher the operating voltage, the more the number of boosting stages; Aging the capacitor based on the number of boost stages and the aging voltage; wherein determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage comprises: The following formula is used to determine the number of boost stages; N=f[a(WV-U)+b]; Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

2. The method according to claim 1, wherein: The aging the capacitor based on the number of boost stages and the aging voltage includes: Normal temperature boost: controlling the temperature during aging to be a first preset temperature, and sequentially boosting the voltage to a first target aging voltage according to the number of boost stages and the aging voltage, wherein the first target aging voltage is greater than the operating voltage; First normal temperature stabilization: maintain the aging voltage at the first target aging voltage for the first preset time; High-temperature aging: controlling the temperature during aging to change from the first preset temperature to the second preset temperature, and controlling the aging voltage to change from the first target aging voltage to the second target aging voltage, and maintaining the aging voltage at the second target aging voltage for a second preset time; wherein the second preset temperature is greater than the first preset temperature, the second target aging voltage is greater than or equal to the operating voltage, and the second preset time is greater than the first preset time; Second normal temperature aging: controlling the temperature during aging to change from the second preset temperature back to the first preset temperature, controlling the aging voltage to change from the second target aging voltage to the first target aging voltage, and maintaining the aging voltage at the first target aging voltage for a third preset time, wherein the second preset time is greater than the third preset time.

3. The method according to claim 2, characterized in that Also includes: The first target aging voltage is greater than or equal to the second target aging voltage.

4. The method according to claim 2, characterized in that Also includes: When boosting at room temperature, first controlling the aging voltage to be forward-boosted to the aging voltage corresponding to the boosting stage; Maintaining the forward aging voltage unchanged for a fourth preset time period; Controlling the aging voltage to reversely boost to an aging voltage corresponding to the boosting stage; The reverse aging voltage is maintained unchanged for a fourth predetermined time period.

5. The method according to claim 4, characterized in that Also includes: The fourth preset time duration is determined based on the operating voltage. The higher the operating voltage is, the longer the fourth preset time duration is.

6. The method according to claim 2, characterized in that Also includes: During the first normal temperature aging, high temperature aging and second normal temperature aging, the direction is reversed once at intervals of a preset period. The direction is reversed by controlling the aging voltage from forward to reverse, or from reverse to forward.

7. The method according to claim 6, characterized in that Also includes: The first preset interval period is smaller than the second preset interval period, wherein the first preset interval period is the preset interval period during the first or second normal temperature aging; the second preset interval period is the preset interval period during high temperature aging.

8. A capacitor aging device, characterized in that: Applied to non-polar electrolytic capacitors, the device comprises: a stage determination module, configured to determine, when the operating voltage of the capacitor is higher than a first preset voltage, the number of boost stages and the aging voltage of each boost stage based on the operating voltage, wherein the higher the operating voltage, the greater the number of boost stages; A capacitor aging module is configured to age the capacitor based on the number of boost stages and the aging voltage, wherein determining the number of boost stages and the aging voltage of each boost stage based on the operating voltage comprises: The following formula is used to determine the number of boost stages; N=f[a(WV-U)+b]; Wherein, N is the number of boost stages, f() is the rounding function, a is the preset coefficient, WV is the working voltage, U is the second preset voltage, and b is the first preset value.

9. A capacitor aging system, characterized in that: include: at least one processor and at least one memory; The memory stores executable instructions of the processor; The processor is configured to execute the method according to any one of claims 1 to 7.

10. An electronic device, characterized in that: include: Memory; The memory stores a computer program or instructions, and when the computer program or instructions are executed by the processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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