A device and method for post-manufacturing calibration and dynamic wavelength locking of silicon photonic links

Abstract

The present application relates to a post-manufacturing calibration and dynamic wavelength locking device and method for a silicon photonic link, wherein the post-manufacturing calibration and dynamic wavelength locking device for a silicon photonic link includes: a detection module, a temperature control module, and an optical phase change module associated with the temperature control module, wherein the detection module is used to detect a first wavelength parameter; the temperature control module is used to apply a pulse voltage signal based on a first difference signal between the first wavelength parameter and a design wavelength parameter, so as to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation for the silicon photonic link; the detection module is also used to detect a second wavelength parameter; the temperature control module is also used to apply a continuous voltage signal based on a second difference signal between the second wavelength parameter and the design wavelength parameter, so as to achieve dynamic wavelength locking of the silicon photonic link through a thermo-optical effect, thereby achieving post-manufacturing calibration compensation and dynamic wavelength control in actual operation.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a device and method for post-manufacturing calibration and dynamic wavelength locking of a silicon optical link. Background Art

[0002] Integrated silicon photonic links, which combine photonic and electronic devices on a silicon-based platform, are widely used in optical communications, optical sensing, optical interconnects, and optical computing, and have garnered increasing attention from both industry and researchers in recent years. While the optoelectronic components in silicon photonic links are compact and easy to integrate, the performance of waveguide components, particularly interferometric components, is highly sensitive to manufacturing errors (effective refractive index, group refractive index, width, thickness, and tilt) due to the significant difference in their refractive index from the cladding material. Furthermore, variations in wafer thickness across different regions and differences in the material's refractive index from the pre-set design value can significantly deviate the final device from its design, potentially rendering it unusable.

[0003] To address the problem of manufacturing deviation, on the one hand, the process tolerance should be considered in the design stage to improve the robustness of the device; on the other hand, secondary process calibration compensation can be performed after manufacturing, or dynamic regulation in actual work can be carried out through refractive index adjustable devices.

[0004] Existing solutions can introduce phase-change materials for post-manufacturing calibration and compensation, but this prevents dynamic wavelength control in subsequent operations. Alternatively, thermal phase shifters can be used to dynamically lock the wavelength during operation, but this often results in a limited control range or high energy consumption. Therefore, an effective solution that combines post-manufacturing calibration and compensation with dynamic wavelength control in actual operation remains lacking. Summary of the Invention

[0005] Based on this, it is necessary to provide a post-manufacturing calibration and wavelength dynamic locking device and method for silicon photonic links to address the above technical problems.

[0006] In a first aspect, an embodiment of the present application provides a post-manufacturing calibration and wavelength dynamic locking device for a silicon photonic link, the device comprising: a detection module connected to an optical device in the silicon photonic link, a temperature control module connected to the detection module, and an optical phase change module located below the temperature control module.

[0007] The detection module is configured to detect a first wavelength parameter of the optical device during post-manufacturing calibration, and obtain a first difference signal based on a difference between the first wavelength parameter and a design wavelength parameter;

[0008] The temperature control module is configured to receive the first difference signal and apply a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation of the silicon photonic link;

[0009] The detection module is further configured to detect a second wavelength parameter of the optical device in real time in a working state, and obtain a second difference signal based on a difference between the second wavelength parameter and the design wavelength parameter;

[0010] The temperature control module is further configured to receive the second difference signal and apply a continuous voltage signal based on the second difference signal, so as to dynamically lock the wavelength of the silicon photonic link through a thermo-optical effect.

[0011] In one embodiment, the detection module includes a photoelectric conversion module and a processing module.

[0012] The photoelectric conversion module is used to detect the optical signal of the optical device and convert the optical signal into an electrical signal;

[0013] The processing module is configured to obtain wavelength parameters of the optical device based on the electrical signal, where the wavelength parameters include a first wavelength parameter and a second wavelength parameter.

[0014] In one embodiment, the temperature control module includes a feedback circuit and a heating electrode.

[0015] The feedback circuit is configured to calculate a voltage value of the pulse voltage signal based on the first difference signal; and to calculate a voltage value of the continuous voltage signal based on the second difference signal;

[0016] The heating electrode is used to generate heating power based on the voltage value of the pulse voltage signal or the voltage value of the continuous voltage signal.

[0017] In one embodiment, the optical device is a micro-ring modulator, which includes a straight waveguide and a ring waveguide coupled to the straight waveguide.

[0018] The detection module is arranged at a detection point of the micro-ring modulator;

[0019] The optical phase change module covers a partial circumferential area above the annular waveguide, and the temperature control module is located above the optical phase change module.

[0020] In one embodiment, the detection module is a PN junction of the micro-ring modulator.

[0021] In one embodiment, the optical device is a Mach-Zehnder interferometer, the optical phase change material module and the temperature control module are located in one arm of the Mach-Zehnder interferometer, and the detection module is located in the other arm of the adjacent rear-end Mach-Zehnder interferometer.

[0022] In one embodiment, the detection module is a PN junction of the adjacent back-end Mach-Zehnder interferometer.

[0023] In a second aspect, an embodiment of the present application further provides a method for post-manufacturing calibration and dynamic wavelength locking of a silicon photonic link, the method being applied to the apparatus described in the first aspect above, the method comprising:

[0024] Acquire a first wavelength parameter of an optical device in the silicon photonic link using the detection module, and obtain a first difference signal based on a difference between the first wavelength parameter and a design wavelength parameter;

[0025] Using the temperature control module to receive the first difference signal, and applying a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation of the silicon photonic link;

[0026] Acquire a second wavelength parameter of the optical device in the silicon photonic link using the detection module, and obtain a second difference signal based on a difference between the second wavelength parameter and the design wavelength parameter;

[0027] The temperature control module is used to receive the second difference signal, and a continuous voltage signal is applied based on the second difference signal, so as to dynamically lock the wavelength of the silicon photonic link through the thermo-optical effect.

[0028] In a third aspect, an embodiment of the present application further provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the method as described in the second aspect above.

[0029] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, wherein the storage medium stores a computer program, wherein when the computer program is executed by a processor, the method described in the second aspect above is implemented.

[0030] The above-mentioned post-manufacturing calibration and wavelength dynamic locking device and method for silicon photonic links detect the first wavelength parameter of the optical device during post-manufacturing calibration through a detection module, and obtain a first difference signal based on the difference between the first wavelength parameter and the design wavelength parameter; receive the first difference signal through a temperature control module, and apply a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby realizing post-manufacturing calibration compensation of the silicon photonic link; also detect the second wavelength parameter of the optical device in real time under working conditions through the detection module, and obtain a second difference signal based on the difference between the second wavelength parameter and the design wavelength parameter; receive the second difference signal through the temperature control module, and apply a continuous voltage signal based on the second difference signal to realize dynamic wavelength locking of the silicon photonic link through the thermo-optical effect, thereby realizing post-manufacturing calibration compensation and dynamic wavelength control in actual operation.

[0031] The details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more readily apparent. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0033] Figure 1 is a block diagram of a post-manufacturing calibration and wavelength dynamic locking device for a silicon photonic link in one embodiment;

[0034] Figure 2 The figure is a schematic diagram of the structure of a device for post-manufacturing calibration and dynamic wavelength locking of a silicon-based micro-ring modulator in an embodiment;

[0035] Figure 3 is a cross-sectional view of a portion of the process for preparing a silicon-based microring modulator according to an embodiment;

[0036] Figure 4 is a schematic structural diagram of a device for post-manufacturing calibration and dynamic wavelength locking of a silicon-based micro-ring modulator in another embodiment;

[0037] Figure 5 is a cross-sectional view of a portion of the process for preparing a silicon-based microring modulator according to another embodiment;

[0038] Figure 6 Schematic diagram of the structure of a post-manufacturing calibration and wavelength dynamic locking device for a silicon-based Mach-Zehnder interferometer in an embodiment;

[0039] Figure 7 is a cross-sectional view of a portion of the process for preparing a silicon-based Mach-Zehnder interferometer according to an embodiment;

[0040] Figure 8 is a cross-sectional view of a portion of the process for preparing a silicon-based Mach-Zehnder interferometer according to another embodiment;

[0041] Figure 9 The figure is a flow chart of a method for post-manufacturing calibration and dynamic wavelength locking of a silicon photonic link in an embodiment. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is described and illustrated below in conjunction with the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely used to explain this application and are not intended to limit this application. Based on the embodiments provided in this application, all other embodiments obtained by those of ordinary skill in the art without making any creative efforts are within the scope of protection of this application.

[0043] Obviously, the drawings described below are merely examples or embodiments of the present application. Those skilled in the art can, without inventive effort, apply the present application to other similar scenarios based on these drawings. Furthermore, it is also understood that, although the effort involved in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, changes in design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as an insufficiency of the content disclosed in this application.

[0044] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments that are mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments unless there is a conflict.

[0045] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by persons of ordinary skill in the art to which this application belongs. The terms "a," "an," "an," "the," and similar expressions used herein do not denote quantitative limitations and may refer to either the singular or the plural. The terms "comprise," "include," "have," and any variations thereof, used herein, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or modules (units) is not limited to the listed steps or units but may also include steps or units not listed, or may include other steps or units inherent to the process, method, product, or apparatus. The terms "connected," "connected," "coupled," and similar expressions used herein are not limited to physical or mechanical connections but may include electrical connections, whether direct or indirect. As used herein, "plurality" means two or more. "And / or" describes an association between associated objects, indicating that three possible relationships exist. For example, "A and / or B" may mean: A exists alone; A and B exist simultaneously; or B exists alone. The character " / " generally indicates that the objects before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific order for the objects.

[0046] The embodiment of the present application provides a post-manufacturing calibration and wavelength dynamic locking device for a silicon photonic link, such as Figure 1 As shown, the device includes a detection module 10 connected to the optical device in the silicon photonics link, a temperature control module 20 connected to the detection module 10, and an optical phase change module 30 located below (or above) the heating zone of the temperature control module 20. The detection module 10 is used to detect the first wavelength parameter of the optical device during post-manufacturing calibration and obtain a first difference signal based on the difference between the first wavelength parameter and the design wavelength parameter. The temperature control module 20 is used to receive the first difference signal and apply a pulsed voltage signal based on the first difference signal to cause the optical phase change module 30 to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation for the silicon photonics link. The detection module 10 is also used to detect the second wavelength parameter of the optical device in real time during operation and obtain a second difference signal based on the difference between the second wavelength parameter and the design wavelength parameter. The temperature control module 20 is also used to receive the second difference signal and apply a continuous voltage signal based on the second difference signal to achieve dynamic wavelength locking of the silicon photonics link through the thermo-optical effect.

[0047] The post-manufacturing calibration refers to the calibration and compensation of certain performance indicators of the device or link to the initial design indicators (such as the operating wavelength) after the wafer has completed all the manufacturing processes; the dynamic wavelength locking refers to the dynamic locking of the operating wavelength of the silicon photonic link to the design wavelength during actual use, even after being disturbed by the external environment, mainly temperature interference.

[0048] During the post-manufacturing calibration phase, the present application utilizes the apparatus described in the embodiments of the present application to calibrate and compensate for process deviations in optical devices in integrated silicon photonic links after manufacturing. A detection module detects the power or wavelength at a set point, generating a photocurrent. This photocurrent can be used to detect the actual operating wavelength. By calculating the deviation between the actual operating wavelength and the designed wavelength, a difference signal is generated. This difference signal is fed back to the temperature control module. Based on the difference signal, the temperature control module applies a large-amplitude pulse voltage signal to the optical phase change module. This completes the post-manufacturing calibration compensation through the optical phase change of the material in the optical phase change module. This calibration compensation is based on the refractive index regulation caused by the phase change in the optical phase change module under the pulsed thermal response. Within a certain range, the refractive index variation range is large and continuously adjustable. Furthermore, after the heat pulse is applied, the refractive index of the phase change material remains unaffected. Therefore, calibration compensation can be performed based on this characteristic. During the calibration process, a large-amplitude pulse voltage is applied by the temperature control module. Due to the Joule heating effect, a pulsed thermal response is generated around it, causing the underlying optical phase change material to undergo a phase change, resulting in a change in refractive index. Due to the non-volatile nature of phase change materials, the refractive index of the phase change material remains at its post-phase change value after the pulse response ends. After pulse excitation, the wavelength of the input optical signal source is scanned to obtain a curve showing the photocurrent changing with wavelength. By applying voltage pulse signals of different amplitudes to the temperature control module, different variation curves can be obtained. By comparing the variation curve with the ideal design curve, the pulse voltage signal required for calibration compensation can be determined. Applying the voltage pulse signal completes calibration compensation for manufacturing deviations. The method is applied to all detection points in an integrated optical link to complete calibration of the entire link.

[0049] After post-manufacturing calibration and compensation are complete, the optical device is still subject to external environmental interference during actual use. Therefore, during operation, the second wavelength parameter of the optical device is detected in real time at the detection point. Based on the difference between the second wavelength parameter and the designed wavelength parameter, a second difference signal is generated. This difference signal is fed back to the temperature control module, which applies a small-amplitude continuous voltage signal to dynamically control and lock the operating wavelength of the silicon photonic link. Under the small-amplitude voltage excitation, the temperature generated by the heating electrode in the temperature control module is far lower than the transition temperature of the optical phase change material. At this time, the optical phase change module does not undergo phase change. The temperature control module uses the thermo-optical effect to achieve dynamic wavelength locking for the silicon photonic link.

[0050] The post-manufacturing calibration and dynamic wavelength locking device for silicon photonic links provided in the embodiments of the present application utilizes the characteristics of optical phase change materials under different voltage excitations to simultaneously achieve non-volatile tuning of the wavelength operating point and dynamic locking of the operating wavelength after being subjected to external disturbances (mainly temperature changes) during actual operation. Based on the non-volatile characteristics of optical phase change materials, power consumption during actual use will be significantly reduced. In addition, the programmable characteristics of optical phase change materials allow for flexible calibration to different operating states, greatly improving the reusability of silicon photonic links.

[0051] In one embodiment, the detection module 10 includes a photoelectric conversion module and a processing module, wherein the photoelectric conversion module is used to detect the optical signal of the optical device and convert the optical signal into an electrical signal; the processing module is used to obtain the wavelength parameters of the optical device based on the electrical signal, and the wavelength parameters include a first wavelength parameter and a second wavelength parameter.

[0052] Specifically, the detection module 10 is a wavelength / power detection module, and the corresponding wavelength can also be obtained from the power value. Among them, the photoelectric conversion module is used to detect the optical signal of the optical device, convert the optical signal into a current or voltage signal, and finally process the signal to obtain the wavelength of the optical signal based on the relationship between the current / voltage signal and the wavelength / power.

[0053] In one embodiment, the temperature control module includes a feedback circuit and a heating electrode, the feedback circuit is used to calculate the voltage value of the pulse voltage signal based on the first difference signal; and to calculate the voltage value of the continuous voltage signal based on the second difference signal; the heating electrode is used to generate heating power based on the voltage value of the pulse voltage signal or the voltage value of the continuous voltage signal.

[0054] Specifically, the feedback circuit is a PID feedback circuit. In the post-manufacturing calibration stage, the PID feedback circuit calculates the voltage value of the pulse voltage signal required to be applied based on the first difference signal, and then the temperature control module applies the pulse voltage signal based on the voltage value to perform post-manufacturing calibration; in the dynamic wavelength locking stage, the PID feedback circuit calculates the voltage value of the continuous voltage signal required to be applied based on the second difference signal, and then the temperature control module applies the continuous voltage signal based on the voltage value, thereby realizing dynamic wavelength locking of the silicon photonic link under environmental disturbances.

[0055] In one embodiment, the optical device is a micro-ring modulator, which includes a straight waveguide and a ring waveguide coupled to the straight waveguide. The detection module is arranged at the detection point of the micro-ring modulator; the optical phase change module covers the top of the ring waveguide, and the temperature control module is located above the optical phase change module.

[0056] like Figure 2 Figure 2 shows a schematic diagram of the post-fabrication calibration and dynamic wavelength locking implementation for a silicon-based microring modulator. An optical signal is input via a single-mode waveguide. Detection points (other locations are possible) are set on the microring modulator's ring waveguide to detect the microring modulator's link power or wavelength. The difference from the designed wavelength is calculated, and the difference signal is fed into the temperature control module. A phase change material (PMM) is positioned above the PN junction ridge waveguide. Changes in its refractive index cause changes in the ridge waveguide's effective refractive index, thereby tuning its operating point. The temperature control module includes a heater electrode positioned above the optical phase change material.

[0057] Furthermore, the detection module can be directly completed by the PN junction of the microring modulator (a PN junction composed of P-type doping and N-type doping), while also achieving modulation of the refractive index of the microring. After the optical signal flows into the microring, the photocurrent generated by the PN junction is amplified and fed into the temperature control module. During the post-manufacturing calibration phase, the phase change state of the optical phase change material is regulated by applying a pulsed electrical signal. During the dynamic wavelength control phase, the temperature control module can be simplified to a conventional heating electrode. The cross-sectional diagram of some of its processes is shown below. Figure 3 shown.

[0058] Specifically, during the post-manufacturing calibration phase, a square-wave pulse voltage signal is applied to the heating electrode, generating transient heating power. This causes the phase-change material beneath the heating electrode to undergo a phase change, altering its refractive index. This in turn modulates the effective refractive index of the underlying ridge waveguide, and thus the resonant wavelength of the microring modulator. Due to the non-volatile nature of the phase-change material, its resonant wavelength adjustment remains unchanged even without the application of the pulse voltage signal. The application of the heat pulse has no effect on the refractive index of the optical waveguide, thus enabling post-manufacturing calibration.

[0059] During the dynamic wavelength locking phase, a continuous voltage signal (low amplitude) is applied to the heater electrode, generating continuous heating power, causing the temperature of the underlying phase-change material and ridge waveguide to change. Because the temperature is well below the phase-change temperature, it has no effect on the refractive index of the phase-change material. At this point, the heater electrode acts as a single heater, and combined with the PN junction's monitoring of the photocurrent, dynamic wavelength locking is achieved.

[0060] Furthermore, the detection module can be connected to an integrated detector in the micro-ring modulator, and the electrical signal after the photoelectric conversion of the detector is amplified and then fed into the temperature control module.

[0061] Furthermore, since the PN junction itself can be used as a thermal resistor, the PN junction can be used as a heating electrode, which can further simplify the process flow and subsequent packaging process. Figure 4 and Figure 5 As shown, Figure 4 A schematic diagram of the structure of a post-manufacturing calibration and wavelength dynamic locking device for a silicon-based micro-ring modulator in another embodiment is shown. Figure 5 A cross-sectional view of a part of the process for preparing a silicon-based microring modulator according to another embodiment is shown. Figure 4 and Figure 5 In this paper, the PN junction of the micro-ring modulator is directly used as the heating electrode in the temperature control module.

[0062] A Mach-Zehnder interferometer (MZI) is an interferometer that can be used to observe the relative phase shift changes caused by a light beam emitted from a single light source being split into two collimated beams and then passing through different paths and media.

[0063] In one embodiment, the optical device is a Mach-Zehnder interferometer, the optical phase change material module and the temperature control module are located in one arm of the Mach-Zehnder interferometer, and the detection module is located in the other arm of the adjacent rear-end Mach-Zehnder interferometer.

[0064] like Figure 6 The figure shows a schematic diagram of the calibration and wavelength dynamic locking device after fabrication of a silicon-based Mach-Zehnder interferometer. Figure 6 As shown, it includes multiple connected Mach-Zehnder interferometers (MZIs), the optical phase change material module and the temperature control module are located in one arm of the MZI, and the detection module is located in the other arm of the adjacent MZI unit at the rear.

[0065] Furthermore, the detection module can be directly completed by the PN junction of the Mach-Zehnder interferometer (the PN junction is composed of P-type doping and N-type doping), but there is no need to modulate the refractive index of the waveguide below. The post-manufacturing calibration process and the dynamic wavelength control process are the same as those described in the above embodiment. Figure 7 Partial cross-sectional view of the process for preparing the silicon-based MZI post-fabrication calibration and wavelength dynamic locking device. Figure 8 A partial cross-sectional view of another silicon-based MZI fabrication process for post-fabrication calibration and wavelength dynamic locking.

[0066] The present application also provides a method for post-manufacturing calibration and dynamic wavelength locking of a silicon photonic link, which is applied to the device described in the above embodiment, such as Figure 9 As shown, the method includes:

[0067] Step 201: using the detection module to obtain a first wavelength parameter of an optical device in the silicon photonic link, and obtaining a first difference signal based on a difference between the first wavelength parameter and a design wavelength parameter;

[0068] Step 202: Utilize the temperature control module to receive the first difference signal, and apply a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation of the silicon photonic link.

[0069] Step 203: using the detection module to obtain a second wavelength parameter of the optical device in the silicon photonic link, and obtaining a second difference signal based on a difference between the second wavelength parameter and the design wavelength parameter;

[0070] Step 204 : Utilize the temperature control module to receive the second difference signal, and apply a continuous voltage signal based on the second difference signal, so as to dynamically lock the wavelength of the silicon photonic link through a thermo-optical effect.

[0071] Through the above steps 201 to 202, post-manufacturing calibration compensation of the silicon photonic link is achieved, and through the above steps 203 to 204, dynamic locking of the wavelength of the silicon photonic link is achieved. Through the above steps 201 to 204, the embodiment of the present application utilizes the characteristics of the optical phase change material under different voltage excitations to simultaneously achieve non-volatile tuning of the wavelength operating point and dynamic locking of the operating wavelength after being subjected to external disturbances (mainly temperature changes) during actual operation.

[0072] In one embodiment, a computer device is provided, which may be a terminal. The computer device includes a processor, memory, a communication interface, a display screen, and an input device connected via a system bus. The processor of the computer device provides computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The communication interface of the computer device is used to communicate with an external terminal via wired or wireless communication. The wireless communication may be achieved via Wi-Fi, a mobile cellular network, NFC (near-field communication), or other technologies. When executed by the processor, the computer program implements a method for post-manufacturing calibration and dynamic wavelength locking of a silicon photonics link. The display screen of the computer device may be a liquid crystal display or an electronic ink display. The input device of the computer device may be a touchscreen layer covering the display screen, keys, a trackball, or a touchpad provided on the computer device housing, or an external keyboard, touchpad, or mouse.

[0073] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of any of the above-mentioned methods for post-manufacturing calibration and dynamic wavelength locking of silicon photonic links are implemented.

[0074] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory may include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0075] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0076] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A post-manufacturing calibration and wavelength dynamic locking device for silicon photonic links, characterized in that: The device comprises: a detection module connected to the optical device in the silicon photonic link, a temperature control module connected to the detection module, and an optical phase change module associated with the temperature control module. The detection module is configured to detect a first wavelength parameter of the optical device during post-manufacturing calibration, and obtain a first difference signal based on a difference between the first wavelength parameter and a design wavelength parameter; The temperature control module is configured to receive the first difference signal and apply a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation of the silicon photonic link; The detection module is further configured to detect a second wavelength parameter of the optical device in real time in a working state, and obtain a second difference signal based on a difference between the second wavelength parameter and the design wavelength parameter; The temperature control module is further configured to receive the second difference signal and apply a continuous voltage signal based on the second difference signal, so as to dynamically lock the wavelength of the silicon photonic link through a thermo-optical effect.

2. The device according to claim 1, characterized in that The detection module includes a photoelectric conversion module and a processing module. The photoelectric conversion module is used to detect the optical signal of the optical device and convert the optical signal into an electrical signal; The processing module is configured to obtain wavelength parameters of the optical device based on the electrical signal, where the wavelength parameters include a first wavelength parameter and a second wavelength parameter.

3. The device according to claim 1, characterized in that The temperature control module includes a feedback circuit and a heating electrode. The feedback circuit is configured to calculate a voltage value of the pulse voltage signal based on the first difference signal; and calculating a voltage value of the continuous voltage signal based on the second difference signal; The heating electrode is used to generate heating power based on the voltage value of the pulse voltage signal or the voltage value of the continuous voltage signal.

4. The device according to claim 1, characterized in that The optical device is a micro-ring modulator, which includes a straight waveguide and a ring waveguide coupled to the straight waveguide. The detection module is arranged at a detection point of the micro-ring modulator; The optical phase change module covers a partial circumferential area above the annular waveguide, and the temperature control module is located above the optical phase change module.

5. The device according to claim 4, characterized in that The detection module is a PN junction of the micro-ring modulator.

6. The device according to claim 1, characterized in that The optical device is a Mach-Zehnder interferometer, the optical phase change module and the temperature control module are located in one arm of the Mach-Zehnder interferometer, and the detection module is located in the other arm of the adjacent rear-end Mach-Zehnder interferometer.

7. The device according to claim 6, characterized in that The detection module is a PN junction of the adjacent rear-end Mach-Zehnder interferometer.

8. A method for post-manufacturing calibration and dynamic wavelength locking of a silicon photonic link, characterized in that: The method is applied to the device according to any one of claims 1 to 7, and the method includes: Acquire a first wavelength parameter of an optical device in the silicon photonic link using the detection module, and obtain a first difference signal based on a difference between the first wavelength parameter and a design wavelength parameter; Using the temperature control module to receive the first difference signal, and applying a pulse voltage signal based on the first difference signal to cause the optical phase change module to undergo an optical phase change, thereby achieving post-manufacturing calibration compensation of the silicon photonic link; Acquire a second wavelength parameter of the optical device in the silicon photonic link using the detection module, and obtain a second difference signal based on a difference between the second wavelength parameter and the design wavelength parameter; The temperature control module is used to receive the second difference signal, and a continuous voltage signal is applied based on the second difference signal, so as to dynamically lock the wavelength of the silicon photonic link through the thermo-optical effect.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the method according to claim 8 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to claim 8 is implemented.

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