Power conversion device

Abstract

The plurality of semiconductor modules (M) are arranged side by side on a first surface of the substrate (30) in a first direction orthogonal to a vertical direction of the power conversion device. Each capacitor (40) has a cylinder portion (44) and electrode terminals (42P, 42N) disposed at a first end portion in the extending direction of the cylinder portion. The at least one first capacitor (401) is disposed on the second surface side of the substrate such that the extension direction of the cylinder portion becomes a second direction orthogonal to the vertical direction and the first direction. The at least one second capacitor (402) is disposed on the second surface side of the substrate such that the extending direction of the cylinder portion is a second direction and the electrode terminal is located on the opposite side of the electrode terminal of the at least one first capacitor in the second direction. In a plan view from the first direction, the at least one first capacitor and the at least one second capacitor are disposed such that a portion of the respective cylindrical portion overlaps in the vertical direction and the second direction.

Description

Technical Field

[0001] The present disclosure relates to a power conversion device. Background Art

[0002] In Japanese Unexamined Patent Application Publication No. 2016-139702 (Patent Document 1), an installation structure of capacitors in a power conversion device is disclosed. The power conversion device includes a plurality of capacitors connected in parallel, a first conductive plate and a second conductive plate connected to electrodes of the capacitors, and a semiconductor module connected to the first conductive plate or the second conductive plate. The first conductive plate and the second conductive plate are laminated with an insulating plate therebetween to form a laminate.

[0003] The first conductive plate and the second conductive plate have connection portions for connecting the semiconductor module. The plurality of capacitors are alternately provided on one surface and the other surface of the laminate. The capacitors provided adjacent to the first conductive plate side and the second conductive plate side across the laminate are arranged such that a pair of electrodes face each other in the direction in which the capacitors are adjacent.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2016-139702 Summary of the Invention

[0007] According to the above-described capacitor installation structure, it is possible to reduce the difference between the distance between the capacitor provided on the first conductive plate and the semiconductor module and the distance between the capacitor provided on the second conductive plate and the semiconductor module. As a result, it is possible to suppress deviation in current sharing among the capacitors.

[0008] However, since the capacitors on the first conductive plate side and the capacitors on the second conductive plate side are arranged in a horizontal direction, the length of the power conversion device in the horizontal direction becomes long, and there is a concern that the occupied area of the power conversion device increases.

[0009] Therefore, a main object of the present disclosure is to provide a power conversion device capable of reducing the deviation in the distance between a capacitor and a semiconductor module among a plurality of capacitors without increasing the occupied area of the power conversion device.

[0010] Means for Solving the Problem

[0011] A power conversion device according to one aspect of the present disclosure includes a plurality of capacitors, a plurality of semiconductor modules, and a substrate. The plurality of capacitors are electrically connected in parallel. The plurality of semiconductor modules are electrically connected to the plurality of capacitors. The substrate has a first surface on which the plurality of semiconductor modules are mounted and a second surface opposite to the first surface. The plurality of semiconductor modules are arranged and disposed along a first direction orthogonal to the vertical direction of the power conversion device on the first surface of the substrate. Each of the plurality of capacitors has a cylindrical portion, a first electrode terminal disposed at a first end portion in the extending direction of the cylindrical portion, and a second electrode terminal. The plurality of capacitors include at least one first capacitor and at least one second capacitor. At least one first capacitor is disposed on the second surface side of the substrate such that the extending direction of the cylindrical portion is a second direction orthogonal to the vertical direction and the first direction. At least one second capacitor is disposed on the second surface side of the substrate such that the extending direction of the cylindrical portion is the second direction, and the first electrode terminal and the second electrode terminal are located on the opposite side in the second direction of the first electrode terminal and the second electrode terminal of at least one first capacitor. In a plan view observed from the first direction, at least one first capacitor and at least one second capacitor are disposed such that a part of their respective cylindrical portions overlaps in the vertical direction and the second direction.

[0012] Advantages of the Invention

[0013] According to the present disclosure, it is possible to provide a power conversion device that can reduce the deviation in the distance between a capacitor and a semiconductor module among a plurality of capacitors without increasing the occupied area of the power conversion device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a block diagram showing the circuit configuration of the power conversion device according to the embodiment.

[0015] Figure 2 is a diagram schematically showing the connection relationship between the power conversion device and the capacitor circuit.

[0016] Figure 3 is an external perspective view of the power conversion device according to the present embodiment.

[0017] Figure 4 is an exploded perspective view of the power conversion device.

[0018] Figure 5 is a front view of the power conversion device.

[0019] Figure 6 is a top view of the power conversion device.

[0020] Figure 7 is from Figure 6 a side view of the power conversion device observed from the arrow VII direction shown in.

[0021] Figure 8 is a side view of the power conversion device as viewed in the direction of arrow VIII shown in Figure 6

[0022] Figure 9 is an external perspective view of the power conversion device of the comparative example.

[0023] Figure 10 is an external perspective view of the power conversion device of the comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0024] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In addition, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated in principle.

[0025] <Circuit Configuration of Power Conversion Device>

[0026] Figure 1 is a block diagram showing the circuit configuration of the power conversion device according to the embodiment of the present disclosure. Figure 1 Shows a configuration example of a converter using the power conversion device 100. The converter receives the R-phase voltage VR from an AC power supply (not shown) via the R-phase line RL. The converter is configured to convert the R-phase voltage VR into a DC voltage and output the DC voltage between the DC buses PL1 and NL1.

[0027] As Figure 1 shown, the power conversion device 100 includes AC terminals AC1, AC2, positive DC terminals BP1, BP2, and negative DC terminals BN1, BN2.

[0028] The AC terminals AC1 and AC2 receive AC power. In the example of the converter, the AC terminal AC2 is connected to the R-phase line and receives the R-phase voltage VR from the AC power supply. Although not shown, in the example of the inverter, the AC terminal AC1 is connected to the U-phase line and outputs the U-phase voltage VU.

[0029] The positive DC terminals BP1 and BP2 are connected to the DC positive bus PL1. The negative DC terminals BN1 and BN2 are connected to the DC negative bus NL1. In the example of the converter, the positive DC terminal BP1 is connected to the DC positive bus PL1, and the negative DC terminal BN1 is connected to the DC negative bus NL1. In the example of the inverter, the positive DC terminal BP2 is connected to the DC positive bus PL1, and the negative DC terminal BN2 is connected to the DC negative bus NL1.

[0030] The power conversion device 100 includes DC lines 10, 12, AC line 14, a plurality of semiconductor modules M1 to M6, and a capacitor circuit 16.

[0031] ​The DC line 10 is connected between the positive DC terminal BP1 and the positive DC terminal BP2. The DC line 12 is connected between the negative DC terminal BN1 and the negative DC terminal BN2. The AC line 14 is connected between the AC terminal AC1 and the AC terminal AC2.

[0032] A plurality of semiconductor modules M1 to M6 are connected in parallel with each other between the DC line 10 and the DC line 12. Hereinafter, the semiconductor modules M1 to M6 may be collectively referred to as the semiconductor module M. In addition, the number of the semiconductor modules M is not limited to 6, and can be changed to any number including a single one.

[0033] The semiconductor module M includes semiconductor switching elements Q1, Q2, diodes D1, D2, a collector terminal C1, an emitter terminal E2, a collector-emitter terminal C2E1, and control terminals G1, G2, E1, E2. The semiconductor switching elements Q1, Q2 are, for example, IGBTs (Insulated Gate Bipolar Transistors). The collector of the IGBT Q1 is connected to the collector terminal C1, and its emitter is connected to the collector of the IGBT Q2, the control terminal E1, and the collector-emitter terminal C2E1. The gate of the IGBT Q1 is connected to the control terminal G1. The emitter of the IGBT Q2 is connected to the emitter terminal E2 and the control terminal E2, and its gate is connected to the control terminal G2. The diodes D1, D2 are connected in anti-parallel with the IGBTs Q1, Q2, respectively.

[0034] The collector terminal C1 of the semiconductor module M is connected to the DC line 10, and the emitter terminal E2 is connected to the DC line 12. The collector-emitter terminal C2E1 of the semiconductor module M is connected to the AC line 14. The collector terminal C1 corresponds to an embodiment of the "first main electrode terminal", and the emitter terminal E2 corresponds to an embodiment of the "second main electrode terminal".

[0035] The positive electrode of the capacitor circuit 16 is connected to the DC line 10, and its negative electrode is connected to the DC line 12. As will be described later, the capacitor circuit 16 has a plurality of capacitors 40 connected in parallel.

[0036] Figure 2 is a diagram schematically showing the connection relationship of the power conversion device 100 and the capacitor circuit 16. As Figure 2 shown, the control terminals G1, G2, E1, E2 of each semiconductor module M are connected to the control device 5. The collector terminal C1 of each semiconductor module M is connected to the DC line 10, the emitter terminal E2 is connected to the DC line 12, and the collector-emitter terminal C2E1 is connected to the AC line 14.

[0037] A plurality of capacitors 40 constituting a capacitor circuit 16 are connected in parallel between the DC line 10 and the DC line 12. The positive terminal of each capacitor 40 is connected to the DC line 10, and the negative terminal is connected to the DC line 12. The number of capacitors 40 can be arbitrarily changed.

[0038] The positive DC terminals BP1 and BP2 are led out from the DC line 10 to the outside of the power conversion device 100. The negative DC terminals BN1 and BN2 are led out from the DC line 12 to the outside of the power conversion device 100. The AC terminals AC1 and AC2 are led out from the AC line 14 to the outside of the power conversion device 100.

[0039] <Installation Structure of Power Conversion Device>

[0040] Next, the installation structure of the power conversion device of the present embodiment will be described. First, the installation structure of the power conversion device of the comparative example of the present embodiment and its problems will be described.

[0041] (Comparative Example)

[0042] Figure 9 And Figure 10 is an external perspective view of the power conversion device of the comparative example. As Figure 9 shown, the power conversion device 200 of the comparative example has a rectangular parallelepiped shape. The power conversion device 200 is constituted by connecting a plurality of semiconductor modules M and a plurality of capacitors 40 to a laminate 210.

[0043] The laminate 210 has a rectangular plate shape. The laminate 210 is constituted by alternately laminating a plurality of insulating plates and a plurality of conductive plates. Specifically, the laminate 210 has a first conductive plate formed with the DC line 10, a second conductive plate formed with the DC line 12, a third conductive plate formed with the AC line 14, and four insulating plates. They are laminated in the order of insulating plate, second conductive plate, insulating plate, first conductive plate, insulating plate, third conductive plate, insulating plate from the lower side in the vertical direction.

[0044] A plurality of through holes 212 penetrating in the thickness direction are formed at specified positions of the laminate 210. Connecting bolts are inserted into the plurality of through holes 212. Through these connecting bolts, the AC line 14, the DC line 10, and the DC line 12 can be electrically connected to the plurality of semiconductor modules M and the plurality of capacitors 40 at specified positions.

[0045] Figure 10 is a view of the power conversion device 200 shown in Figure 9 with the laminate 210 removed. As Figure 10 shown, the plurality of semiconductor modules M and the plurality of capacitors 40 are housed inside a rectangular parallelepiped-shaped housing 215.

[0046] A plurality of capacitors 40 constitute Figure 1 and Figure 2 the capacitor circuit 16 shown. The plurality of capacitors 40 are arranged and disposed in a manner of standing on the bottom surface of the housing 215. For example, the plurality of capacitors 40 are arranged in a staggered shape. That is, the plurality of capacitors 40 are arranged in two columns at equal intervals in the length direction of the substrate 230, and are arranged in a staggered manner between the opposing columns.

[0047] The capacitor 40 has a cylindrical portion 44, a positive electrode terminal 42P provided at the first end portion in the extending direction of the cylindrical portion 44, and a negative electrode terminal 42N. The positive electrode terminal 42P and the negative electrode terminal 42N respectively correspond to an embodiment of the "first electrode terminal" and the "second electrode terminal". By electrically connecting the positive electrode terminal 42P and the negative electrode terminal 42N to the laminate 210 using a connecting bolt, the capacitor 40 is mounted on the laminate 210.

[0048] The substrate 230 is mounted on the upper portion of the housing 215 in parallel with the bottom surface of the housing 215. The substrate 230 has a rectangular flat plate shape. A plurality of semiconductor modules M are arranged and disposed on the surface of the substrate 230 in the length direction. The semiconductor module M has a resin formed in a rectangular shape and a collector terminal C1, an emitter terminal E2, and a collector-emitter terminal C2E1 arranged so as to protrude parallel to each other from the surface of the resin. By electrically connecting the collector terminal E1, the emitter terminal E2, and the collector-emitter terminal C2E1 to the laminate 210 using a connecting bolt, the semiconductor module M is mounted on the laminate 210.

[0049] When viewed from the upper surface of the housing 215, the plurality of semiconductor modules M and the plurality of capacitors 40 are arranged and disposed in the horizontal direction. In addition, the plurality of semiconductor modules M and the plurality of capacitors 40 are arranged such that the positions of the collector terminal E1, the emitter terminal E2, and the collector-emitter terminal C2E1 of the semiconductor module M in the vertical direction of the housing 215 are equal to the positions of the positive electrode terminal 42P and the negative electrode terminal 42N of the capacitor 40 in the vertical direction. Thereby, the plurality of semiconductor modules M and the plurality of capacitors 40 can be electrically connected via the laminate 210.

[0050] However, since the plurality of semiconductor modules M and the plurality of capacitors 40 are arranged and disposed in the horizontal direction, there is a concern that the occupied area of the power conversion device 200 increases according to the increase in the number of capacitors 40.

[0051] In addition, since the plurality of capacitors 40 are arranged in two columns, there is a deviation in the distance between the capacitors 40 and the semiconductor module M among the plurality of capacitors 40. Figure 10 The arrow B1 in indicates the distance between the capacitor 40 in the column close to the semiconductor module M and the semiconductor module M. Figure 10The arrow B2 in [the figure] indicates the distance between the capacitor 40 and the semiconductor module M away from the column of the semiconductor module M. The length of the arrow B2 is shorter than the length of the arrow B1.

[0052] Here, the distance between the capacitor 40 and the semiconductor module M is proportional to the inductance of the current path formed between the capacitor 40 and the semiconductor module M. Therefore, as the distance between the capacitor 40 and the semiconductor module M becomes longer, the inductance of the current path increases. The increase in the inductance of the current path is the main cause of the increase in the power loss generated in the power conversion device.

[0053] In this way, in the power conversion device 200 of the comparative example, there is a problem that the occupied area of the power conversion device increases according to the number of capacitors 40 constituting the capacitor circuit 16. In addition, since there is a deviation in the distance between the capacitor 40 and the semiconductor module M among the plurality of capacitors 40, there is a problem that there is a deviation in the inductance of the current path among the plurality of capacitors 40. There is a concern that the deviation in the inductance among the plurality of capacitors 40 may have an adverse effect on the characteristics of the power conversion device 200. The present embodiment provides a new mounting structure that can solve these problems.

[0054] (Mounting structure of the power conversion device of the present embodiment)

[0055] Figure 3 is an external perspective view of the power conversion device 100 of the present embodiment. Figure 3 The perspective view shown is a perspective view of the power conversion device 100 observed from the front side.

[0056] As Figure 3 shown, the power conversion device 100 has a rectangular parallelepiped shape. In the following description, the left - right direction when observing the power conversion device 100 from the front is set as the X - direction, the front - back direction is set as the Y - direction, and the vertical direction is set as the Z - direction. The X - direction corresponds to the "second direction", and the Y - direction corresponds to the "first direction".

[0057] The power conversion device 100 is constituted by connecting a plurality of semiconductor modules M and a plurality of capacitors 40 to the laminate 20. The power conversion device 100 has different configurations of the plurality of capacitors 40 and the shape of the laminate 20 compared with Figure 9 and Figure 10 the power conversion device 200 of the comparative example shown.

[0058] Figure 4 is Figure 3 the exploded perspective view of the power conversion device 100 shown. As Figure 4As shown, the power conversion device 100 includes a first conductive plate 22, a second conductive plate 24, a substrate 30, a plurality of semiconductor modules M1 to M6, a plurality of capacitors 40_1 to 40_7, a first fixing plate 50, a second fixing plate 52, and a housing 15. The first conductive plate 22, the second conductive plate 24, the substrate 30, the plurality of semiconductor modules M1 to M6, the plurality of capacitors 40_1 to 40_7, the first fixing plate 50, and the second fixing plate 52 are housed inside the housing 15.

[0059] The substrate 30 is mounted on the upper part of the housing 15 in parallel with the bottom surface of the housing 15. The substrate 30 has a rectangular flat plate shape. The substrate 30 has a first surface 30a and a second surface 30b on the opposite side of the first surface 30a. The second surface 30b faces the bottom surface of the housing 15.

[0060] The plurality of semiconductor modules M1 to M6 are mounted on the first surface 30a of the substrate 30. The plurality of semiconductor modules M1 to M6 are arranged and configured in the Y direction on the first surface 30a of the substrate 30.

[0061] The plurality of capacitors 40_1 to 40_7 constitute a capacitor circuit 16. The plurality of capacitors 40_1 to 40_7 are mounted on the second surface 30b side of the substrate 30.

[0062] Specifically, the plurality of capacitors 40_1 to 40_7 are classified into first capacitors 40_1, 40_3, 40_5, 40_7 and second capacitors 40_2, 40_4, 40_6. In addition, when the number of capacitors 40 constituting the capacitor circuit 16 is even, it is preferable that the number of first capacitors is the same as the number of second capacitors. When the number of capacitors 40 constituting the capacitor circuit 16 is odd, it is preferable that the difference between the number of first capacitors and the number of second capacitors is 1.

[0063] The first capacitors 40_1, 40_3, 40_5, 40_7 are fixed to the first fixing plate 50. The first fixing plate 50 has a rectangular flat plate shape and is configured as the second end portion in the extending direction of the cylindrical portion 44 that fixes the first capacitor 40. In Figure 4 In the example, a plurality of receiving jigs 60 are provided on the first fixing plate 50. The receiving jig 60 has a cylindrical shape and can accommodate the cylindrical portion 44 of the capacitor 40 inside. By arranging the first capacitor 40 inside the receiving jig 60, the first capacitor 40 can be positioned relative to the first fixing plate 50. Thus, the first capacitors 40_1, 40_3, 40_5, 40_7 are arranged in a row and configured to stand up on the first fixing plate 50.

[0064] The second capacitors 40_2, 40_4, 40_6 are fixed to the second fixing plate 52. The second fixing plate 52 has a rectangular flat plate shape and fixes the second end portion in the extending direction of the cylindrical portion 44 of the second capacitor 40. On the second fixing plate 52, a plurality of receiving jigs 60 for positioning the second capacitor 40 with respect to the second fixing plate 52 are provided in the same manner as on the first fixing plate 50. Thus, the second capacitors 40_2, 40_4, 40_6 are arranged in a row and configured to stand on the second fixing plate 52.

[0065] The first fixing plate 50 and the second fixing plate 52 are connected to the second surface 30b of the substrate 30. Specifically, the first fixing plate 50 is connected to the second surface 30b of the substrate 30 so as to be orthogonal to the second surface 30b of the substrate 30 and extend along the Y direction. Thus, the cylindrical portions 44 of the first capacitors 40_1, 40_3, 40_5, 40_7 extend in the X direction and are arranged in a row in the Y direction.

[0066] The second fixing plate 52 is also connected to the second surface 30b of the substrate 30 so as to be orthogonal to the second surface 30b of the substrate 30 and extend along the Y direction. That is, the second fixing plate 52 is provided in parallel with the first fixing plate 50. Thus, the cylindrical portions 44 of the second capacitors 40_2, 40_4, 40_6 extend in the X direction and are arranged in a row in the Y direction.

[0067] Furthermore, in the above configuration, the first fixing plate 50 and the second fixing plate 52 are arranged such that the surfaces for fixing the capacitor 40 face each other. Therefore, the electrode terminals 42P, 42N of the second capacitors 40_2, 40_4, 40_6 are located on the opposite sides in the X direction of the electrode terminals 42P, 42N of the first capacitors 40_1, 40_3, 40_5, 40_7.

[0068] A plurality of (for example, three) through holes 500 for respectively passing through the cylindrical portions 44 of the second capacitors 40_2, 40_4, 40_6 are formed in the first fixing plate 50. The plurality of through holes 500 are arranged and formed along the Y direction. The through hole 500 corresponds to an embodiment of the "first through hole".

[0069] A plurality of (for example, four) through holes 520 for respectively passing through the cylindrical portions 44 of the first capacitors 40_1, 40_3, 40_5, 40_7 are formed in the second fixing plate 52. The plurality of through holes 520 are arranged and formed along the Y direction. The through hole 520 corresponds to an embodiment of the "second through hole".

[0070] The first conductive plate 22 constitutes the DC line 10. The second conductive plate 24 constitutes the DC line 12. The first conductive plate 22 and the second conductive plate 24 are laminated with an insulating plate (not shown) therebetween. In addition, the power conversion device 100 further includes a third conductive plate (not shown) that constitutes the AC line 14, and a laminate 20 is formed by alternately laminating these three conductive plates and four insulating plates.

[0071] The first conductive plate 22 has a base portion 220 and bent portions 222, 224. The base portion 220 has a rectangular flat plate shape, and a plurality of through holes 221 penetrating in the thickness direction are formed in the base portion 220. The plurality of through holes 221 are grouped in sets of three through holes 221, and multiple sets (for example, six sets) of through holes 221 are arranged along the Y direction to be formed.

[0072] The bent portion 222 is provided at the first end portion of the base portion 220 in the X direction and is bent perpendicularly to the base portion 220. The bent portion 224 is provided at the second end portion of the base portion 220 in the X direction and is bent perpendicularly to the base portion 220. The bent portions 222, 224 have the shape of a rectangular flat plate. The base portion 220 corresponds to the "first base portion", the bent portion 222 corresponds to the "first bent portion", and the bent portion 224 corresponds to the "second bent portion".

[0073] A plurality of (for example, four) through holes 223 penetrating the bent portion 222 in the thickness direction are formed in the bent portion 222. The plurality of through holes 223 are arranged along the Y direction to be formed. A plurality of (for example, four) through holes 225 penetrating the bent portion 224 in the thickness direction are formed in the bent portion 224. The plurality of through holes 225 are arranged along the Y direction to be formed.

[0074] The second conductive plate 24 has a base portion 240 and bent portions 242, 246. The base portion 240 has the same shape as the base portion 220 of the first conductive plate 22. A plurality of through holes 241 penetrating in the thickness direction are formed in the base portion 240. The plurality of through holes 241 are grouped in sets of three through holes 241, and multiple sets (for example, six sets) of through holes 241 are arranged along the Y direction to be formed.

[0075] In a state where the first conductive plate 22 and the second conductive plate 24 are laminated, the through holes 221 formed in the base portion 220 of the first conductive plate 22 and the through holes 241 formed in the base portion 240 of the second conductive plate 24 overlap each other and are concentrically arranged. Connecting bolts are inserted into the plurality of through holes 221, 241. Through these connecting bolts, the DC line 10 can be electrically connected to the collector terminals C1 of the plurality of semiconductor modules M1 to M6. In addition, the DC line 12 can be electrically connected to the emitter terminals E2 of the plurality of semiconductor modules M1 to M6.

[0076] The bent portion 242 is provided at the first end of the base portion 240 in the X direction and is bent perpendicularly to the base portion 240. The bent portion 246 is provided at the second end of the base portion 240 in the X direction and is bent perpendicularly to the base portion 240. The bent portions 242 and 246 have the shape of a rectangular flat plate. The base portion 240 corresponds to the "second base portion", the bent portion 242 corresponds to the "third bent portion", and the bent portion 246 corresponds to the "fourth bent portion".

[0077] A plurality of through holes 243 and 244 penetrating the bent portion 242 in the thickness direction are formed in the bent portion 242. A plurality of (for example, four) through holes 243 are arranged and formed along the Y direction. A plurality of (for example, four) through holes 244 are arranged and formed along the Y direction. Each through hole 243 and each through hole 244 are arranged and formed in the Z direction.

[0078] In a state where the first conductive plate 22 and the second conductive plate 24 are laminated, the through holes 223 of the bent portion 222 formed in the first conductive plate 22 and the through holes 243 of the bent portion 242 formed in the second conductive plate 24 overlap with each other and are concentrically arranged. Connecting bolts are inserted into the plurality of through holes 223 and 243. Through the connecting bolts, the DC line 10 can be electrically connected to the positive terminal 42P of the first capacitors 40_1, 40_3, 40_5, and 40_7. Connecting bolts are inserted into the plurality of through holes 244. Through the connecting bolts, the DC line 12 can be electrically connected to the negative terminal 42N of the first capacitors 40_1, 40_3, 40_5, and 40_7.

[0079] A plurality of through holes 247 and 248 penetrating the bent portion 246 in the thickness direction are formed in the bent portion 246. A plurality of (for example, three) through holes 247 are arranged and formed along the Y direction. A plurality of (for example, three) through holes 248 are arranged and formed along the Y direction. Each through hole 247 and each through hole 248 are arranged and formed in the Z direction.

[0080] In a state where the first conductive plate 22 and the second conductive plate 24 are laminated, the through holes 225 of the bent portion 224 formed in the first conductive plate 22 and the through holes 247 of the bent portion 246 formed in the second conductive plate 24 overlap with each other and are concentrically arranged. Connecting bolts are inserted into the plurality of through holes 225 and 247. Through the connecting bolts, the DC line 10 can be electrically connected to the positive terminal 42P of the second capacitors 40_2, 40_4, and 40_6. Connecting bolts are inserted into the plurality of through holes 248. Through the connecting bolts, the DC line 12 can be electrically connected to the negative terminal 42N of the second capacitors 40_2, 40_4, and 40_6.

[0081] Figure 5 It is the front view of the power conversion device 100. Figure 6It is a top view of the power conversion device 100. Figure 7 It is a Figure 6 side view of the power conversion device 100 viewed from the direction of arrow VII shown in Figure 8 It is a Figure 6 side view of the power conversion device 100 viewed from the direction of arrow VIII shown in. In Figure 5 the illustration of the housing 15 is omitted. In Figure 6 the illustration of the housing 15 and the laminate 20 is omitted.

[0082] As Figure 5 shown, the power conversion device 100 is constituted by stacking, above the Z direction of the first fixing plate 50 for fixing the first capacitors 40_1, 40_3, 40_5, 40_7 and the second fixing plate 52 for fixing the second capacitors 40_2, 40_4, 40_6, a laminate 20 including a substrate 30 on which a plurality of semiconductor modules M are mounted, a first conductive plate 22, and a second conductive plate 24.

[0083] The first fixing plate 50 and the second fixing plate 52 are arranged such that the surfaces for fixing the capacitors 40 face each other. As Figure 7 shown, the first capacitors 40_1, 40_3, 40_5, 40_7 are arranged in a row in the Y direction. As Figure 8 shown, the second capacitors 40_2, 40_4, 40_6 are arranged in a row in the Y direction. As Figure 5 and Figure 6 shown, the electrode terminals 42P, 42N of the second capacitors 40_2, 40_4, 40_6 are located on the opposite side in the X direction of the electrode terminals 42P, 42N of the first capacitors 40_1, 40_3, 40_5, 40_7.

[0084] The positive terminal 42P of the first capacitor 40 is connected to the bent portion 222 of the first conductive plate 22 by a connecting bolt inserted through the through-holes 223, 243 ( Figure 4 ). The negative terminal 42N of the first capacitor 40 is connected to the bent portion 242 of the second conductive plate 24 by a connecting bolt inserted through the through-hole 244 ( Figure 4 ).

[0085] The positive terminal 42P of the second capacitor 40 is connected to the bent portion 224 of the first conductive plate 22 by a connecting bolt inserted through the through-holes 225, 247. The negative terminal 42N of the second capacitor 40 is connected to the bent portion 246 of the second conductive plate 24 by a connecting bolt inserted through the through-hole 248.

[0086] The collector terminal C1 of the semiconductor module M is connected to the base 220 of the first conductive plate 22 by a connecting bolt inserted into the through-holes 221 and 241. The emitter terminal E2 of the semiconductor module M is connected to the base 240 of the second conductive plate 24 by a connecting bolt inserted into the through-hole 241.

[0087] As Figure 5 shown, in a plan view observed from the Y direction, the first capacitor 40 and the second capacitor 40 are arranged such that a part of each cylindrical portion 44 overlaps in the X direction. In addition, the first capacitor 40 and the second capacitor 40 are arranged such that a part of their respective cylindrical portions 44 overlaps in the Z direction.

[0088] When the first capacitor 40 and the second capacitor 40 are arranged side by side along the X direction with the second ends of the cylindrical portions 44 facing each other, the length W of the power conversion device 100 in the X direction is approximately twice the length of the cylindrical portion 44 of the capacitor 40. In contrast, in the present embodiment, by arranging the first capacitor 40 and the second capacitor 40 so as to partially overlap in the X direction, the length W of the power conversion device 100 in the X direction can be shortened.

[0089] On the other hand, when the first capacitor 40 and the second capacitor 40 are arranged in an alternating row in the Y direction, the length D of the power conversion device 100 in the Y direction becomes a length based on the product of the diameter of the cylindrical portion 44 of the capacitor 40 and the number of capacitors 40. Therefore, depending on the number of capacitors 40 constituting the capacitor circuit 16, the occupied area of the power conversion device 100 increases.

[0090] In the present embodiment, by arranging the first capacitor 40 and the second capacitor 40 such that a part of their respective cylindrical portions 44 overlaps in the Z direction, as Figure 7 and Figure 8 shown, a plurality of capacitors 40 are arranged in a staggered manner along the Y direction. That is, a plurality of capacitors 40 are arranged in two columns at equal intervals in the Y direction and are arranged in a staggered manner between the opposing columns. As a result, the interval between the first capacitors 40 adjacent in the Y direction and the interval between the second capacitors 40 adjacent in the Y direction can be reduced. Therefore, the length W of the power conversion device 100 in the X direction and the length D in the Y direction can be shortened, and the occupied area of the power conversion device 100 can be reduced.

[0091] In addition, by arranging the first capacitor 40 and the second capacitor 40 such that a part of their respective cylindrical portions 44 overlaps in the Z direction, the difference in the Z-direction positions of the electrode terminals 42P and 42N of the first capacitor 40 and the Z-direction positions of the electrode terminals 42P and 42N of the second capacitor 40 can be reduced.

[0092] Figure 5 The arrow A1 in Figure 5 indicates the distance between the first capacitor 40 and the semiconductor module M. Figure 5 The arrow A2 in Figure 5 indicates the distance between the second capacitor 40 and the semiconductor module M. By appropriately setting the positions of the first capacitor 40 and the second capacitor 40 in the Z direction and the position of the semiconductor module M in the X direction, the deviation between the distance between the semiconductor module M and the first capacitor 40 and the distance between the semiconductor module M and the second capacitor 40 can be eliminated. Therefore, according to the present embodiment, without increasing the occupied area of the power conversion device 100, the problem of deviation in the inductance of the current path between the plurality of capacitors 40 can be eliminated.

[0093] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The scope of the present disclosure is shown not by the above description but by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.

[0094] Description of Reference Numerals

[0095] 5 Control device; 10, 12 DC lines; 14 AC line; 15, 215 Housing; 16 Capacitor circuit; 20, 210 Stack; 22 First conductive plate; 24 Second conductive plate; 30, 230 Substrate; 40 Capacitor; 42P Positive terminal; 42N Negative terminal; 44 Cylindrical portion; 50 First fixing plate; 52 Second fixing plate; 60 Receiving jig; 100, 200 Power conversion device; 220, 240 Base; 222, 224, 242, 246 Bent portion; 221, 223, 225, 243, 244, 247, 248, 500, 520 Through hole; M, M1 to M6 Semiconductor module; C1 Collector terminal; E2 Emitter terminal; C2E1 Collector-emitter terminal; G1, G2, E1, E2 Control terminal; Q1, Q2 Semiconductor switching element; D1, D2 Diode; AC1, AC2 AC terminal; BP1, BP2 Positive DC terminal; BN1, BN2 Negative DC terminal.

Claims

1. A power conversion device includes: A plurality of capacitors electrically connected in parallel; A plurality of semiconductor modules electrically connected to the plurality of capacitors; and A substrate having a first surface for mounting the plurality of semiconductor modules and a second surface opposite to the first surface, The plurality of semiconductor modules are arranged and configured on the first surface of the substrate along a first direction orthogonal to the vertical direction of the power conversion device, Each of the plurality of capacitors has a cylindrical portion and a first electrode terminal and a second electrode terminal disposed on a first end portion in the extending direction of the cylindrical portion, The plurality of capacitors include at least one first capacitor and at least one second capacitor, The at least one first capacitor is disposed on the second surface side of the substrate such that the extending direction of the cylindrical portion becomes a second direction orthogonal to the vertical direction and the first direction, The at least one second capacitor is disposed on the second surface side of the substrate such that the extending direction of the cylindrical portion becomes the second direction, and the first electrode terminal and the second electrode terminal are located on the opposite side of the first electrode terminal and the second electrode terminal of the at least one first capacitor in the second direction, In a plan view observed from the first direction, the at least one first capacitor and the at least one second capacitor are disposed such that a part of their respective cylindrical portions overlaps in the vertical direction and the second direction.

2. The power conversion device according to claim 1, The at least one first capacitor includes a plurality of first capacitors, The at least one second capacitor includes a plurality of second capacitors, In a plan view observed from the second direction, the plurality of first capacitors and the plurality of second capacitors are arranged in a staggered manner in the first direction, In a plan view observed from the first direction, the first capacitor and the second capacitor adjacent to each other in the second direction are disposed such that a part of their respective cylindrical portions overlaps in the vertical direction and the second direction.

3. The power conversion device according to claim 1 or 2, Each of the plurality of semiconductor modules has a first main electrode terminal and a second main electrode terminal, The power conversion device further includes: A first conductive plate; and A second conductive plate laminated on the first conductive plate with an insulating plate therebetween, The first conductive plate includes: A first base portion facing the first surface of the substrate and connected to the first main electrode terminals of the plurality of semiconductor modules; A first bent portion bent from a first end portion of the first base portion in the second direction toward the vertical direction and electrically connected to the first electrode terminal of the at least one first capacitor; And A second bent portion bent from a second end portion of the first base portion in the second direction toward the vertical direction and electrically connected to the first electrode terminal of the at least one second capacitor, The second conductive plate includes: A second base portion overlapping the first base portion and connected to the second main electrode terminals of the plurality of semiconductor modules; A third bent portion that bends from a first end portion in the second direction of the second base portion toward the vertical direction and is electrically connected to the second electrode terminal of the at least one first capacitor; and A fourth bent portion that bends from a second end portion in the second direction of the second base portion toward the vertical direction and is electrically connected to the second electrode terminal of the at least one second capacitor.

4. The power conversion device according to claim 3, A plurality of through holes are formed in the first base portion along the first direction, A plurality of through holes overlapping the through holes formed in the first base portion are formed in the second base portion, It is arranged in such a way that bolts can be inserted through the through holes formed in the first base portion and the through holes formed in the second base portion.

5. The power conversion device according to claim 3, A plurality of through holes are formed in the first bent portion along the first direction, A plurality of through holes overlapping the through holes formed in the first bent portion are formed in the third bent portion, It is arranged in such a way that bolts can be inserted through the through holes formed in the first bent portion and the through holes formed in the third bent portion.

6. The power conversion device according to claim 3, A plurality of through holes are formed in the second bent portion along the first direction, A plurality of through holes overlapping the through holes formed in the second bent portion are formed in the fourth bent portion, It is arranged in such a way that bolts can be inserted through the through holes formed in the second bent portion and the through holes formed in the fourth bent portion.

7. The power conversion device according to claim 1 or 2, further comprising: A first fixing plate that is connected to the second surface of the substrate in the vertical direction and extends along the first direction; and A second fixing plate that is connected to the second surface of the substrate in the vertical direction and is arranged parallel to the first fixing plate, The first fixing plate fixes the second end portion in the extending direction of the cylindrical portion of the at least one first capacitor, The second fixing plate fixes the second end portion in the extending direction of the cylindrical portion of the at least one second capacitor, At least one first through hole for allowing the cylindrical portion of the at least one second capacitor to pass through is formed in the first fixing plate, At least one second through hole for allowing the cylindrical portion of the at least one first capacitor to pass through is formed in the second fixing plate.

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