Method for reversibly adjusting Y2O3 surface atomic-scale mechanochemical removal behavior

Abstract

The invention discloses a method for reversibly adjusting Y2O3 surface atomic-scale mechanochemical removal behaviors, and belongs to the technical field of atomic-scale precision material removal. Comprising the following steps: S1, performing ultraviolet irradiation treatment on Y2O3 to obtain a primary treatment sample; and S2, in an atmospheric environment, applying a certain load to the Al2O3 needle tip, rubbing the surface of the primarily treated sample, and realizing a mechanochemical removal behavior in the rubbing process. According to the method, ultraviolet rays are utilized to irradiate the surface of Y2O3, electron transition of the Y element in Y2O3 is promoted to form a color center, and the surface of Y2O3 has mechanochemical activity; then, in the atmospheric environment, a certain load is applied to the Al2O3 needle tip to rub the Y2O3 surface, a mechanochemical reaction can be generated on the friction interface, a Y-O-Al bond bridge is formed, and then the atomic-scale precision material removal behavior is achieved. Due to the fact that the applied stress acts on the plane in a pure elastic deformation mode, the lower-layer plane cannot be damaged, and the integrity of the lower-layer surface structure is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic-precision material removal, and particularly to a method for reversibly regulating the atomic-scale mechanochemical removal behavior of the Y2O3 surface. Background Art

[0002] Atomic-scale manufacturing refers to a cutting-edge manufacturing technology that acts on atoms with energy and realizes the leap of product performance and function through the controllable removal of atomic-scale materials or the large-scale manipulation and assembly of atomic / molecular-scale structures. It represents a new stage in the development of human understanding and manufacturing capabilities of the material world, and is of great significance for supporting major national strategic needs and even promoting the development of a new round of scientific and technological revolution and industrial transformation in the future.

[0003] Yttrium oxide (Y2O3) is a transparent ceramic material, known for its excellent properties suitable for lasers and infrared optics, including a high melting point of 2430 °C, a wide transparency range of 0.2 - 8 μm, excellent corrosion resistance and thermal stability, etc. With the increasing requirements for optical precision in high-power lasers and infrared optical devices, it becomes increasingly important to achieve atomic-precision manufacturing while ensuring no damage to the substrate.

[0004] Chemical mechanical polishing can provide atomic-scale surface roughness while minimizing substrate damage. Its process involves complex tribological interactions between abrasive particles, slurries, and the workpiece surface. In traditional Y2O3 chemical mechanical polishing processes, material removal mainly relies on pure mechanical plowing, which is a non-confined and non-selective material removal behavior and cannot achieve precise control at the atomic-scale resolution. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for reversibly regulating the atomic-scale mechanochemical removal behavior of the Y2O3 surface. This method irradiates the Y2O3 surface with ultraviolet light to promote the electron transition of the Y element in Y2O3 to form color centers, making the Y2O3 surface mechanochemically active; then in an atmospheric environment, by applying a certain load to the Al2O3 tip to friction the Y2O3 surface, a mechanochemical reaction can occur at the friction interface to form Y - O - Al bond bridges, thereby achieving atomic-precision material removal behavior.

[0006] The purpose of the present invention is achieved by the following technical solutions:

[0007] A method for reversibly regulating the atomic-scale mechanochemical removal behavior of the Y2O3 surface, comprising the following steps:

[0008] S1. Subject Y2O3 to ultraviolet irradiation treatment to obtain a preliminarily treated sample;

[0009] S2. Under the atmospheric environment, place the pre-treated sample on a processing device with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing device with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

[0010] In this application, the principle of mechanochemical removal is as follows: with the assistance of water molecules, by precisely controlling the applied mechanical force, three processes, namely hydration, the formation of interfacial bond bridges, and the hydrolysis reaction of bottom back bonds, will successively occur at the chemically active counterface interface.

[0011] The above process can be used to achieve the removal of a single atomic layer of the material, mainly because the formation of interfacial bond bridges only acts on single atoms on the surface of the material to be removed, and the subsequent hydrolysis reaction of bottom back bonds is a confined reaction at the single-atom level.

[0012] The chemical activity of the friction pair surface on mechanochemical action is mainly reflected in that, through the action of water molecules, bond bridges are formed between interfaces, and the bond bridges can effectively transmit shear stress, weaken the energy required for the breaking of chemical bonds in the surface network structure of the material, promote the hydrolysis reaction of water molecules on it, and achieve the removal of surface materials.

[0013] However, taking Y2O3 as an example, before ultraviolet irradiation treatment, using any one of the tips such as SiO2, Al2O3, CeO2, Si, Si3N4, etc., it is impossible to achieve mechanochemical removal behavior in an environment with the participation of water molecules, which indicates that the surface of Y2O3 itself does not have chemical activity. Therefore, on this basis, even if precise mechanical stress is applied, it is still difficult to ensure that the material removal amount is precisely and stably controlled at the atomic level, resulting in the destruction of the integrity of the crystal structure of the processed surface.

[0014] Based on this, this invention patent proposes an innovative solution. Under atmospheric environment conditions, use ultraviolet light to excite the electrons of Y atoms in Y2O3 to generate color centers. The formation of color centers can greatly change the chemical activity of the Y2O3 surface, enabling it to undergo a mechanochemical reaction with the Al2O3 surface under the action of mechanical stress, and achieving atomic-level precision removal of the Y2O3 surface. Since the applied stress acts on the plane as pure elastic deformation and cannot cause damage to the underlying plane, the integrity of the underlying structure is guaranteed.

[0015] Compared with the pure mechanical removal directly acting on the plane, the mechanical stress removed by this method is extremely low, and can significantly reduce by 1 - 2 orders of magnitude. This method can overcome the problem that the material removal amount is difficult to precisely control in the traditional method, and also ensures the integrity and high precision of the crystal structure of the processed surface.

[0016] In addition, the color centers generated under the action of ultraviolet irradiation in the present invention are unstable. As time goes by, the mechanochemical activity on the surface of Y2O3 will gradually disappear. At this time, if a certain load is applied to the surface of Y2O3 by the tip of Al2O3 for friction, no mechanochemical reaction can occur at the friction interface, and no obvious material removal behavior can be achieved. Therefore, the method of the present invention is reversible.

[0017] As some feasible embodiments of the present application, in step S1, the irradiation treatment time ≥ 0.5 h. In the present invention, the irradiation time is extremely important, which directly determines whether the Y2O3 in the present invention can undergo a transition under the action of ultraviolet light, and further determines whether the chemical mechanical behavior is successful.

[0018] As some feasible embodiments of the present application, in step S1, the UV wavelength is 200 - 300 nm.

[0019] The basic principle of the present invention is as follows: After Y2O3 is treated with ultraviolet light, the electrons in the 4p orbit of Y atoms are excited by ultraviolet light and move to a higher energy state, which requires about 5 eV of energy. This process changes the electron arrangement from 4s 2 4p 6 (stable) to 4s 2 4p 5 (unstable), which creates a prerequisite for the mechanochemical reaction. During the atomic-level wear process, the surface of Al2O3 easily reacts with the surface of Y2O3 treated with ultraviolet light through mechanochemical action, and forms a Y-O-Al bond bridge due to its inherent chemical activity.

[0020] The implementation conditions are as follows: The wavelength of the UV light needs to be between 200 nm and 300 nm. This is because the energy required for the color center transition of Y element is about 5 eV, which can be determined by the photon energy formula (In the formula, E is the energy required for electron transition; h is Planck's constant; c is the speed of light; λ is the wavelength). According to the calculation of the formula, the wavelength needs to be between 200 - 300 nm.

[0021] As some feasible embodiments of the present application, in step S2, the load applied to the tip of Al2O3 during scribing is 0.5 - 5 μN.

[0022] As some feasible embodiments of the present application, in step S2, the radius of curvature of the tip of Al2O3 is 1 μm.

[0023] As some feasible embodiments of the present application, in step S2, the parameters of the friction operation are as follows:

[0024] The scribing frequency is 2 Hz; the number of scribing times is 3000 times; the scribing length is 2 μm.

[0025] As some feasible embodiments of the present application, in step S2, the tip of Al2O3 is spherical, conical, square, rhombic or triangular

[0026] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0027] 1. The present invention patent proposes an innovative solution. Under atmospheric environmental conditions, the ultraviolet light is used to excite the electron transition of Y atoms in Y2O3 to generate color centers, which can greatly change the chemical activity of the Y2O3 surface, enabling it to undergo a mechanochemical reaction with the Al2O3 surface under the action of mechanical stress to form Y-O-Al bond bridges, and achieving atomic-level precision removal of the Y2O3 surface.

[0028] Since the applied stress acts on the plane as pure elastic deformation and cannot cause damage to the underlying plane, the integrity of the underlying structure is ensured. Compared with the pure mechanical removal directly acting on the plane, the mechanical stress removed by this method is extremely low, which can significantly reduce by 1-2 orders of magnitude. This method can overcome the problem that it is difficult to precisely control the material removal amount in the traditional method, and also ensures the integrity and high precision of the surface crystal structure after processing.

[0029] 2. The color centers generated under the ultraviolet irradiation of the present invention are unstable. As time passes, the mechanochemical activity of the Y2O3 surface will gradually disappear. At this time, applying a certain load through the tip of Al2O3 to rub the Y2O3 surface cannot generate a mechanochemical reaction at the friction interface, and obvious material removal behavior cannot be achieved. Therefore, the method of the present invention can realize non-destructive and reversible modification of the Y2O3 surface. Description of the Drawings

[0030] Figure 1 : Experimental result diagram of scratching the Y2O3 surface with the tip of Al2O3 in the atmospheric environment after treating the Y2O3 surface with ultraviolet light of 254 nm wavelength for 1 hour;

[0031] Figure 2 : Experimental result diagram of scratching the Y2O3 surface with the tip of Al2O3 in the atmospheric environment after treating the Y2O3 surface with ultraviolet light of 211 nm wavelength for 2 hours;

[0032] Figure 3 : Experimental result diagram of scratching the Y2O3 surface with the tip of Al2O3 in the atmospheric environment after treating the Y2O3 surface with ultraviolet light of 295 nm wavelength for 5 hours;

[0033] Figure 4 : Experimental result diagram of scratching the Y2O3 surface with the tip of Al2O3 in the atmospheric environment without ultraviolet treatment;

[0034] Figure 5: Experimental result diagram of scratching the surface of CaF2 with an Al2O3 tip in an atmospheric environment after treating the surface of CaF2 with ultraviolet light of 254 nm wavelength for 1 hour;

[0035] Figure 6 : Experimental result diagram of scratching the surface of Al2O3 with an Al2O3 tip in an atmospheric environment after treating the surface of Al2O3 with ultraviolet light of 254 nm wavelength for 1 hour;

[0036] Figure 7 : Experimental result diagram of scratching the surface of Al2O3 with an SiO2 tip in an atmospheric environment after treating the surface of Y2O3 with ultraviolet light of 254 nm wavelength for 1 hour;

[0037] Figure 8 : Experimental result diagram of scratching the surface of Y2O3 with an Al2O3 tip in an atmospheric environment after treating the surface of Y2O3 with ultraviolet light of 147 nm wavelength for 1 hour;

[0038] Figure 9 : Experimental result diagram of scratching the surface of Y2O3 with an Al2O3 tip in an atmospheric environment after treating the surface of Y2O3 with ultraviolet light of 369 nm wavelength for 1 hour;

[0039] Figure 10 : Experimental result diagram of scratching the surface of Y2O3 with an Al2O3 tip in an atmospheric environment after treating the surface of Y2O3 with ultraviolet light of 254 nm wavelength for 0.1 hour;

[0040] Figure 11 : Experimental result diagram of scratching the surface of Y2O3 with an Al2O3 tip in a vacuum environment after treating the surface of Y2O3 with ultraviolet light of 254 nm wavelength for 1 hour;

[0041] Figure 12 : Experimental result diagram of scratching the surface of Y2O3 with an Al2O3 tip in an atmospheric environment after treating the surface of Y2O3 with ultraviolet light of 254 nm wavelength for 1 hour until the color centers disappear. Detailed implementation manners

[0042] Example 1

[0043] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a preliminary treated sample;

[0044] S2. Under atmospheric environment, place the pre-treated sample on a processing device with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip (the tip shape is not limited and can be any one of spherical, conical, square, rhombic, triangular, etc.) on the processing device with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the direction of linear reciprocating motion.

[0045] Among them, the specific parameters of the scribing processing are as follows:

[0046] The load is 0.5 - 5 μN.

[0047] The radius of curvature of the Al2O3 tip is 1 μm.

[0048] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0049] The surface topography map after scribing processing is as shown in Figure 1 (tested by atomic force microscope, the same as the following figure). According to Figure 1 it can be known that Example 1 can produce obvious scratches, and the removal depth is 0.5 - 18.8 nm, proving that mechanochemical removal behavior has occurred.

[0050] Example 2

[0051] S1. Put Y2O3 into the ultraviolet irradiation device and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 2 hours (UV wavelength is 211 nm) to obtain a pre-treated sample;

[0052] S2. Under atmospheric environment, place the pre-treated sample on a processing device with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing device with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the direction of linear reciprocating motion.

[0053] Among them, the specific parameters of the scribing processing are as follows:

[0054] The load is 3 μN.

[0055] The radius of curvature of the Al2O3 tip is 1 μm.

[0056] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0057] The surface topography map after scribing processing is as shown in Figure 2 As shown, according to Figure 2 it can be known that Example 2 can produce obvious scratches, and the removal depth is 8.2 nm, proving that mechanochemical removal behavior has occurred.

[0058] Example 3

[0059] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 5 hours (UV wavelength is 295 nm) to obtain a preliminarily treated sample;

[0060] S2. Under the atmospheric environment, place the preliminarily treated sample on the processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the direction of linear reciprocating motion.

[0061] Among them, the specific parameters of the scribing processing are as follows:

[0062] The load is 3 μN.

[0063] The radius of curvature of the Al2O3 tip is 1 μm.

[0064] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0065] The surface topography map after scribing processing is as Figure 3 shown. According to Figure 3 it can be known that Example 3 can produce obvious scratches, and the removal depth is 9.9 nm, proving that mechanochemical removal behavior has occurred.

[0066] Comparative Example 1

[0067] Under the atmospheric environment, place the unirradiated Y2O3 on the processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip (the tip shape is not limited and can be any one of spherical, conical, square, rhombic, triangular, etc.) on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

[0068] Among them, the specific parameters of the scribing processing are as follows:

[0069] The load is 0.5 - 5 μN.

[0070] The radius of curvature of the Al2O3 tip is 1 μm.

[0071] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0072] The surface topography map after scribing processing is as Figure 4 shown. According to Figure 4 it can be known that Comparative Example 1 can only produce very weak scratches, and the removal depth is 0.5 - 0.9 nm (the depth less than 1 nm can be ignored), proving that mechanochemical removal behavior has not occurred.

[0073] Comparative Example 2

[0074] S1. Put CaF2 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a pre-treated sample;

[0075] S2. Under the atmospheric environment, place the pre-treated sample on the processing equipment with sub-nanometer displacement accuracy, and install the scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

[0076] Among them, the specific parameters of the scribing processing are as follows:

[0077] The load is 1 μN.

[0078] The radius of curvature of the Al2O3 tip is 1 μm.

[0079] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0080] The surface topography map after scribing processing is as Figure 5 shown. According to Figure 5 it can be seen that no scratches are generated in Comparative Example 2, and the removal depth is 0 nm, indicating that after replacing Y2O3 with CaF2, mechanochemical removal behavior cannot occur under the same conditions.

[0081] Comparative Example 3

[0082] S1. Put Al2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a pre-treated sample;

[0083] S2. Under the atmospheric environment, place the pre-treated sample on the processing equipment with sub-nanometer displacement accuracy, and install the scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

[0084] Among them, the specific parameters of the scribing processing are as follows:

[0085] The load is 3 μN.

[0086] The radius of curvature of the Al2O3 tip is 1 μm.

[0087] The scribing frequency is 2 Hz; the scribing times are 3000 times; the scribing length is 2 μm.

[0088] The surface topography map after scribing processing is as Figure 6 shown. According toFigure 6 It can be seen that no scratches are generated in Comparative Example 3, and the removal depth is 0 nm, indicating that after replacing Y2O3 with Al2O3, mechanochemical removal behavior cannot occur under the same conditions.

[0089] Comparative Example 4

[0090] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a preliminarily treated sample;

[0091] S2. In the atmospheric environment, place the preliminarily treated sample on the processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with a SiO2 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

[0092] Among them, the specific parameters of the scribing processing are as follows:

[0093] The load is 1 μN.

[0094] The radius of curvature of the SiO2 tip is 1 μm.

[0095] The scribing frequency is 2 Hz; the number of scribing times is 3000 times; the scribing length is 2 μm.

[0096] The surface topography diagram after scribing processing is as Figure 7 shown. According to Figure 7 It can be seen that no scratches are generated in Comparative Example 4, and the removal depth is 0 nm, indicating that after replacing the Al2O3 tip with a SiO2 tip, mechanochemical removal behavior cannot occur under the same conditions.

[0097] Comparative Example 5

[0098] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 147 nm) to obtain a preliminarily treated sample;

[0099] S2. In the atmospheric environment, place the preliminarily treated sample on the processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the linear reciprocating motion direction.

[0100] Among them, the specific parameters of the scribing processing are as follows:

[0101] The load is 1 μN.

[0102] The radius of curvature of the Al2O3 tip is 1 μm.

[0103] The scribing frequency is 2 Hz; the number of scribing times is 3000; the scribing length is 2 μm.

[0104] The surface topography map after scribing is as Figure 8 shown. According to Figure 8 it can be seen that no scratches are generated in Comparative Example 5, and the removal depth is 0 nm, indicating that when the ultraviolet wavelength is not in the range of 200 - 300 nm, mechanochemical removal behavior cannot occur under the same conditions.

[0105] Comparative Example 6

[0106] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 369 nm) to obtain a pre-treated sample;

[0107] S2. In the atmospheric environment, place the pre-treated sample on a processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the linear reciprocating motion direction.

[0108] Among them, the specific parameters of the scribing processing are as follows:

[0109] The load is 1 μN.

[0110] The radius of curvature of the Al2O3 tip is 1 μm.

[0111] The scribing frequency is 2 Hz; the number of scribing times is 3000; the scribing length is 2 μm.

[0112] The surface topography map after scribing is as Figure 9 shown. According to Figure 9 it can be seen that no scratches are generated in Comparative Example 6, and the removal depth is 0 nm, indicating that when the ultraviolet wavelength is not in the range of 200 - 300 nm, mechanochemical removal behavior cannot occur under the same conditions.

[0113] Comparative Example 7

[0114] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 0.1 hour (UV wavelength is 254 nm) to obtain a pre-treated sample;

[0115] S2. In the atmospheric environment, place the pre-treated sample on a processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the linear reciprocating motion direction.

[0116] Among them, the specific parameters of the scribing processing are as follows:

[0117] The load is 1 μN.

[0118] The curvature radius of the Al2O3 tip is 1 μm.

[0119] The scratching frequency is 2 Hz; the number of scratching times is 3000 times; the scratching length is 2 μm.

[0120] The surface topography map after scratching is as Figure 10 shown. According to Figure 10 it can be seen that there are no scratches in Comparative Example 7, and the removal depth is 0 nm, indicating that when the ultraviolet irradiation time is less than 30 min, the mechanochemical removal behavior cannot occur under the same conditions.

[0121] Comparative Example 8

[0122] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a pre-treated sample;

[0123] S2. Use a mechanical pump to extract air to a pressure of 1 Pa to 10 Pa (i.e., a vacuum environment), place the pre-treated sample on a processing equipment with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing equipment with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scratching processing in the linear reciprocating motion direction.

[0124] Among them, the specific parameters of the scratching processing are as follows:

[0125] The load is 1 μN.

[0126] The curvature radius of the Al2O3 tip is 1 μm.

[0127] The scratching frequency is 2 Hz; the number of scratching times is 3000 times; the scratching length is 2 μm.

[0128] The surface topography map after scratching is as Figure 11 shown. According to Figure 11 it can be seen that there are no scratches in Comparative Example 8, and the removal depth is 0 nm, indicating that when the scratching condition is changed to a vacuum environment, the mechanochemical removal behavior cannot occur under the same conditions.

[0129] Comparative Example 9

[0130] S1. Put Y2O3 into the ultraviolet irradiation equipment and close the chamber door; then turn on the ultraviolet irradiation for surface treatment for 1 hour (UV wavelength is 254 nm) to obtain a pre-treated sample, and place it for 6 months to wait for the color center to disappear;

[0131] S2. Under the atmospheric environment, place the pre-treated sample on a processing device with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing device with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the direction of linear reciprocating motion.

[0132] Among them, the specific parameters of the scribing processing are as follows:

[0133] The load is 1 μN.

[0134] The radius of curvature of the Al2O3 tip is 1 μm.

[0135] The scribing frequency is 2 Hz; the number of scribing times is 3000 times; the scribing length is 2 μm.

[0136] The surface topography map after scribing processing is as Figure 12 shown. According to Figure 12 it can be known that there are no scratches in Comparative Example 9, and the removal depth is 0.5 nm, indicating that when the color centers disappear, mechanochemical removal behavior cannot occur under the same conditions. At the same time, this comparative example shows that the mechanochemical activity of the Y2O3 surface after ultraviolet irradiation treatment is reversible.

[0137] In summary, by comparing Example 1 with Comparative Examples 2 and 3, it can be known that after replacing Y2O3 with CaF2 or Al2O3, even if the material surface is treated by ultraviolet irradiation, mechanochemical removal behavior still cannot occur when using an Al2O3 tip under the atmospheric environment.

[0138] By comparing Example 1 with Comparative Example 4, it can be known that after replacing the Al2O3 tip with a SiO2 tip, even if Y2O3 is pre-treated by ultraviolet irradiation, mechanochemical removal behavior cannot occur.

[0139] By comparing Example 1 with Comparative Examples 5 and 6, it can be known that when the ultraviolet wavelength is outside the range of 200 - 300 nm, even if Y2O3 is pre-treated by ultraviolet irradiation, mechanochemical removal behavior still cannot occur when using an Al2O3 tip under the atmospheric environment. By comparing Example 1 with Comparative Example 7, it can be known that when the irradiation time is less than 30 minutes, even if the material surface is treated by ultraviolet irradiation, mechanochemical removal behavior still cannot occur when using an Al2O3 tip under the atmospheric environment.

[0140] By comparing Example 1 with Comparative Example 8, it can be known that when the scribing condition is a vacuum environment, even if the material surface is treated by ultraviolet irradiation, mechanochemical removal behavior still cannot occur when using an Al2O3 tip under the atmospheric environment.

[0141] Comparing Example 1 with Comparative Example 9 shows that: after the color centers disappear, even if the material surface has been treated by ultraviolet irradiation before, mechanical-chemical removal behavior still cannot occur when using an Al2O3 tip in an atmospheric environment, indicating that the mechanical-chemical activity on the surface of Y2O3 is reversible.

[0142] This shows that Y2O3 can only undergo mechanical-chemical removal behavior when scratched with an Al2O3 tip in an atmospheric environment after being treated by ultraviolet irradiation (≥30 min) with a wavelength of 200 - 300 nm, and the mechanical-chemical activity on the surface of Y2O3 is reversible.

Claims

1. A method for reversibly regulating the atomistic mechanochemical removal behavior on the surface of Y2O3, characterized in that, It includes the following steps: S1. Subject Y2O3 to ultraviolet irradiation treatment to obtain a preliminarily treated sample; S2. Under an atmospheric environment, place the preliminarily treated sample on a processing device with sub-nanometer displacement accuracy, and install a scanning probe with an Al2O3 tip on the processing device with sub-nanometer displacement accuracy. According to the scanned surface topography of the material, perform scribing processing in the set processing trajectory direction.

2. A method for reversibly adjusting the atomically mechanochemical removal behavior on the surface of Y2O3 according to claim 1, characterized in that, In step S1, the irradiation treatment time ≥ 30 min.

3. A method for reversibly regulating the atomic-level mechanochemical removal behavior on the surface of Y2O3 according to claim 1, characterized in that, In step S1, the UV wavelength is 200 - 300 nm.

4. A method for reversibly regulating the atomically mechanochemical removal behavior of Y2O3 surface according to claim 1, characterized in that In step S2, the load applied to the Al2O3 tip during scribing processing ≥ 1 μN.

5. A method for reversibly regulating the atomically mechanochemical removal behavior on the surface of Y2O3 according to claim 1, characterized in that In step S2, the radius of curvature of the Al2O3 tip is 1 μm.

6. A method for reversibly adjusting the surface atomic-level mechanochemical removal behavior of Y2O3 according to claim 1, characterized in that In step S2, the parameters of the scribing processing are as follows: The scribing frequency is 2 Hz; the number of scribing times is 3000 times; the scribing length is 2 μm.

7. A method for reversibly adjusting the surface atomic-scale mechanochemical removal behavior of Y2O3 according to claim 1, characterized in that, In step S2, the Al2O3 tip is spherical, conical, square, rhombic or triangular.

Images