Method, system, device and storage medium for monitoring the operating status of a solid-state hard disk

Abstract

The present invention discloses a method, system, equipment and storage medium for monitoring the operating status of a solid-state drive (SSD), and belongs to the technical field of SSD operating status monitoring. The method comprises the following steps: S1, monitoring the core indicators of different SSDs during operation, including health indicators, performance indicators, environment and hardware indicators; establishing a field mapping table for SSDs of different models, and uniformly converting the SMART attributes of different manufacturers into custom indicators; combining the main control temperature, write speed, read error rate and ambient temperature to predict the temperature values of different NAND areas; combining temperature, voltage and write amplification to correct the remaining life of the SSD. The present invention can effectively improve the operation and maintenance efficiency of the SSD by unifying the SMART attribute indicators, accurately predicting the NAND temperature, and combining the multi-factor prediction lifespan, and provide safety protection for the stable operation of the SSD.

Description

Technical Field

[0001] The present invention relates to the technical field of solid-state hard disk operation status monitoring, and in particular to a method, system, device and storage medium for monitoring the operation status of a solid-state hard disk. Background Art

[0002] When it comes to monitoring the operating status of solid-state drives (SSDs), there are many urgent issues that need to be addressed. First, different manufacturers have very different definitions of the SMART attributes of SSDs. The units and calculation methods of various indicators vary greatly. For example, some manufacturers present the remaining lifespan as a specific duration, while others use a fuzzy level representation. Read and write speed units also come in various forms, such as KB / s and GB / s. This inconsistency makes it difficult to directly understand and compare cross-brand hard drive data during monitoring. When technicians are faced with a large number of hard drives of different brands and models, they cannot quickly conduct horizontal analysis and find it difficult to accurately locate devices with abnormal operation or performance degradation. This greatly reduces the efficiency and accuracy of massive hard drive operating status detection and brings great difficulties to the centralized operation and maintenance management of hard drives.

[0003] Secondly, traditional temperature monitoring methods have serious flaws. Most tools can only read the temperature of the SSD's main controller. However, NAND flash memory, as a key storage component, often has localized high temperatures that are difficult to capture in a timely manner due to insufficient sensor coverage. Localized high temperatures in NAND flash memory can cause a series of problems, such as accelerated chip aging and reduced data storage reliability, thereby threatening device stability and data security. However, due to the lack of effective monitoring methods, these potential overheating risks often go undetected.

[0004] Finally, existing methods for predicting the remaining lifespan of SSDs lack accuracy. The actual lifespan of an SSD is affected by a combination of factors, such as temperature, voltage, and write amplification. However, traditional prediction methods fail to fully account for these key factors, resulting in significant discrepancies between predicted and actual results. This makes it difficult for users to plan data storage and device replacements in advance, and can lead to serious consequences such as data loss due to unexpected drive damage.

[0005] In summary, the current field of SSD operating status monitoring faces problems such as difficulty in data interpretation, incomplete temperature monitoring, and inaccurate life prediction. There is an urgent need for a comprehensive, accurate, and efficient SSD operating status monitoring method, system, device, and storage medium to meet the growing data storage and management needs. Summary of the Invention

[0006] In response to the problems in the related art, the present invention proposes a method, system, device and storage medium for monitoring the operating status of a solid-state drive to overcome the above-mentioned technical problems existing in the existing related art.

[0007] To this end, the specific technical solutions adopted in the present invention are as follows:

[0008] A method for monitoring the operating status of a solid-state drive, the method comprising the following steps:

[0009] S1. The core indicators for monitoring different SSDs during operation include health indicators, performance indicators, environment and hardware indicators;

[0010] S2. Create a field mapping table for different models of solid-state drives to uniformly convert SMART attributes from different manufacturers into custom indicators;

[0011] S3, combining the main control temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different NAND areas;

[0012] S4. Combining temperature, voltage, and write amplification ratio to correct the remaining life of the solid state drive.

[0013] As a preferred embodiment, the core indicators of monitoring different solid-state drives during operation, including health indicators, performance indicators, environment and hardware indicators, include the following steps:

[0014] S11. Monitor health indicators, including remaining lifespan, total amount of written data, number of bad blocks and spare blocks, and SSD wear leveling status.

[0015] The remaining lifespan is calculated based on the programming cycles of the NAND flash memory and the lifespan prediction provided by the manufacturer.

[0016] S12. Monitoring performance indicators include read and write speed, latency, interface error rate, and read and write error rate;

[0017] S13. Monitor the environment and hardware status including main control temperature, ambient temperature, and power supply status, wherein the power supply status includes the number of abnormal power outages and voltage data.

[0018] As a preferred embodiment, the process of establishing a field mapping table for different models of solid-state drives and converting SMART attributes of different manufacturers into custom indicators includes the following steps:

[0019] S21. Convert the remaining life data of each hard disk into a uniform ratio of 0% to 100%; convert the total write volume into TB, convert the number of bad blocks into an integer, convert the number of spare blocks into a percentage; and convert the wear leveling into a scale of 0-10.

[0020] S22. Convert the read and write speeds of each hard disk into MB / s, normalize the latency into milliseconds, convert the interface errors into times, and convert the read and write error rates into percentages.

[0021] S23. Unify the temperature to degrees Celsius and count the number of power outages, and also count the number of times the voltage exceeds ±10%.

[0022] As a preferred embodiment, the method of combining the main control temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different NAND regions includes the following steps:

[0023] S31. Divide the NAND chip into edge, center, and interlayer areas, and analyze the erase and write count distribution using SMART data.

[0024] S32. Build a thermodynamic model based on the main control temperature, write speed, read error rate, and ambient temperature, and calculate the temperature values of different areas of the NAND chip. The specific formula is:

[0025] ;

[0026] in, is the calculated temperature value of the NAND hotspot area, is the ambient temperature, The temperature rise between the main control and NAND, and ,in, Main control temperature, To reflect the thermal resistance coefficient of the heat conduction efficiency from the main control to the NAND, is the temperature rise caused by writing, and ,in, is the write speed, is the baseline power consumption, is the thermal resistance coefficient that reflects the efficiency of converting power consumption to temperature rise, is the additional temperature rise due to the read error rate, and ,in, are the read error rate and the read error rate threshold, is the error correction temperature rise coefficient;

[0027] Different areas of the NAND chip have different write speeds, so the temperature will also vary.

[0028] S33. Process the temperature data of different areas of the NAND chip to obtain a final temperature.

[0029] As a preferred embodiment, the processing of the temperature data of different areas of the NAND chip to obtain the final temperature includes the following steps:

[0030] S331. Calculate the final temperature. The specific formula is:

[0031] ;

[0032] in, is the final temperature, They are the temperature at the edge, center, and between layers of the NAND chip, are the weight coefficients of the temperature in each region, and their values are 0.2, 0.3, and 0.5 respectively.

[0033] As a preferred embodiment, the correction of the remaining life of the solid-state drive by combining temperature, voltage, and write amplification factor includes the following steps:

[0034] S41. Calculate WAF, and ,in They are NAND write amount and host write amount respectively;

[0035] S42. Construct a comprehensive life correction model. The specific formula is:

[0036] ;

[0037] in, is the calculated remaining life, is the manufacturer's nominal write amplification, Test the ambient temperature for manufacturers, For abnormal power outages and voltage exceeding ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient;

[0038] S43, outputting the remaining life data.

[0039] A system for monitoring the operating status of a solid-state drive comprises the following modules: a data monitoring module, a data conversion module, a temperature prediction module, and a remaining life prediction module, wherein the data monitoring module, the data conversion module, the temperature prediction module, and the remaining life prediction module are sequentially communicatively connected;

[0040] The data monitoring module is used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, environment and hardware indicators;

[0041] The data conversion module is used to convert the properties of different solid-state drives into custom indicators;

[0042] The temperature prediction module divides the NAND into different areas and combines the main control temperature with the write speed, read error rate, and ambient temperature to predict the temperature of different NAND areas;

[0043] The remaining life prediction module combines temperature, voltage, and write amplification to correct the remaining life of the solid state drive.

[0044] A device for monitoring the operating status of a solid-state hard disk comprises a memory, a processor, and computer instructions stored in the memory and executed on the processor. When the computer instructions are executed by the processor, any of the above methods is performed.

[0045] A storage medium for monitoring the operating status of a solid-state hard disk is used to store computer instructions. When the computer instructions are executed by a processor, any of the above methods is completed.

[0046] The beneficial effects of the present invention are:

[0047] 1. The present invention establishes a field mapping table for different models of solid-state drives and uniformly converts the SMART attributes of different manufacturers into custom indicators, which can effectively solve the data interpretation difficulties caused by inconsistent indicators and large differences in manufacturer definitions. Since the units and calculation methods of SMART attributes of various manufacturers are different, such as the remaining life is presented in specific time periods or fuzzy levels, and the read and write speed units also exist in various forms such as KB / s and GB / s, cross-brand hard drive data is difficult to directly understand during monitoring. Through unified conversion, all hard drive data is standardized to a consistent standard, eliminating differences in units and calculation logic, and presenting data on the same scale. This makes it easier for technicians to quickly conduct horizontal comparative analysis when faced with a large number of hard drives of different brands and models, accurately locate devices with abnormal operation or performance degradation, greatly improve the efficiency and accuracy of massive hard drive operation status detection, and provide a solid data foundation for centralized hard drive operation and maintenance management.

[0048] 2. This invention divides the NAND chip into edge, center, and interlayer regions, combines the number of erase and write cycles with the write speed to obtain predicted temperatures for different regions, and then performs weighted processing to obtain the final temperature. This method can overcome the shortcomings of traditional monitoring methods. Most tools can only read the main control temperature, while local high temperatures in NAND flash memory are often difficult to detect in a timely manner due to insufficient sensor coverage. This makes the potential risk of chip overheating undetectable, thereby threatening device stability and data security. By predicting the temperatures of different regions, it is possible to accurately determine the areas of the NAND chip that are prone to local high temperatures, such as the edge, center, and interlayer. Combined with the final temperature obtained through weighted processing, it can more comprehensively and accurately reflect the actual thermal state of the NAND chip.

[0049] 3. The present invention significantly improves the accuracy of lifespan prediction by combining voltage, write amplification factor, and predicted temperature to correct the remaining lifespan of solid-state drives. By calculating WAF, the relationship between NAND write volume and host write volume can be accurately measured, reflecting the degree of flash memory consumption by actual writes. When constructing a comprehensive lifespan correction model, factors such as temperature, WAF, abnormal power outages, and voltage fluctuations are incorporated, taking into account a variety of key real-world situations that affect the lifespan of solid-state drives, and further outputting more reliable remaining lifespan data, making it easier for users to plan data storage and equipment replacement in advance. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0051] Figure 1 The present invention is a flowchart of a method for monitoring the operating status of a solid-state drive according to an embodiment of the present invention. DETAILED DESCRIPTION

[0052] To further illustrate each embodiment, the present invention provides drawings, which are part of the disclosure of the present invention. They are mainly used to illustrate the embodiments and can be used in conjunction with the relevant descriptions in the specification to explain the operating principles of the embodiments. By referring to these contents, ordinary technicians in this field should be able to understand other possible implementation methods and advantages of the present invention. The components in the figures are not drawn to scale, and similar component symbols are generally used to represent similar components.

[0053] According to an embodiment of the present invention, a method, system, device and storage medium for monitoring the operating status of a solid-state drive are provided.

[0054] The present invention will now be further described with reference to the accompanying drawings and specific embodiments. Figure 1 As shown, a method for monitoring the operating status of a solid-state hard disk according to an embodiment of the present invention includes the following steps:

[0055] S1. The core indicators for monitoring different SSDs during operation include health indicators, performance indicators, environment and hardware indicators;

[0056] Furthermore, monitoring the core indicators of different SSDs during operation, including health indicators, performance indicators, environment and hardware indicators, involves the following steps:

[0057] S11. Monitor health indicators, including remaining lifespan, total amount of written data, number of bad blocks and spare blocks, and SSD wear leveling status.

[0058] S12. Monitoring performance indicators include read and write speed, latency, interface error rate, and read and write error rate;

[0059] S13. Monitor the environment and hardware status including main control temperature, ambient temperature, and power supply status, wherein the power supply status includes the number of abnormal power outages and voltage data.

[0060] S2. Create a field mapping table for different models of solid-state drives to uniformly convert SMART attributes from different manufacturers into custom indicators;

[0061] Furthermore, establishing a field mapping table for different models of SSDs and converting the SMART attributes of different manufacturers into custom indicators includes the following steps:

[0062] S21. Convert the remaining life data of each hard disk into a uniform ratio of 0% to 100%; convert the total write volume into TB, convert the number of bad blocks into an integer, convert the number of spare blocks into a percentage; and convert the wear leveling into a scale of 0-10.

[0063] S22. Convert the read and write speeds of each hard disk into MB / s, normalize the latency into milliseconds, convert the interface errors into times, and convert the read and write error rates into percentages.

[0064] S23. Unify the temperature to degrees Celsius and count the number of power outages, and also count the number of times the voltage exceeds ±10%.

[0065] It should be noted that converting data from different hard drives into custom indicators can effectively eliminate the interference caused by differences in data units and magnitudes, making the performance of each hard drive directly comparable; unified units avoid misjudgments due to different units, and standardized numerical ranges allow data to be presented intuitively on the same scale; thus, users can quickly compare key indicators such as the health status, read / write performance, and stability of each hard drive horizontally, easily identify devices with excellent performance or potential risks, and greatly improve data evaluation efficiency.

[0066] S3, combining the main control temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different NAND areas;

[0067] Furthermore, combining the main control temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different NAND areas includes the following steps:

[0068] S31. Divide the NAND chip into edge, center, and interlayer areas, and analyze the erase and write count distribution using SMART data.

[0069] S32. Build a thermodynamic model based on the main control temperature, write speed, read error rate, and ambient temperature, and calculate the temperature values of different areas of the NAND chip. The specific formula is:

[0070] ;

[0071] in, is the calculated temperature value of the NAND hotspot area, is the ambient temperature, The temperature rise between the main control and NAND, and ,in, Main control temperature, To reflect the thermal resistance coefficient of the heat conduction efficiency from the main control to the NAND, is the temperature rise caused by writing, and ,in, is the write speed, is the baseline power consumption, is the thermal resistance coefficient that reflects the efficiency of converting power consumption to temperature rise, is the additional temperature rise due to the read error rate, and ,in, are the read error rate and the read error rate threshold, is the error correction temperature rise coefficient;

[0072] It should be noted that the main controller and NAND are physically close, and their temperature has a linear relationship with the overall NAND temperature. High write loads will cause frequent NAND charge operations, increased power consumption, and rising temperature gradients. A sudden increase in error rate reflects charge leakage or oxide layer degradation, and local resistance changes cause additional heat. External heat dissipation conditions directly affect heat dissipation efficiency. For every 5°C increase in ambient temperature, the NAND hotspot temperature will increase by 3-8°C.

[0073] It should be noted that by analyzing the distribution of erase and write times through SMART data and combining the read and write speed to predict temperature data, the differences in usage intensity in different areas of the chip can be accurately located.

[0074] S33, process the temperature data of different areas of the NAND chip to obtain the final temperature

[0075] Furthermore, processing the temperature data of different areas of the NAND chip to obtain the final temperature includes the following steps:

[0076] S331. Calculate the final temperature. The specific formula is:

[0077] ;

[0078] in, is the final temperature, They are the temperature at the edge, center, and between layers of the NAND chip, are the weight coefficients of the temperature in each region, and their values are 0.2, 0.3, and 0.5 respectively.

[0079] It's important to note that NAND chip temperatures vary across different regions, and a single regional temperature cannot fully reflect the overall thermal condition. A specific formula combining the temperatures of each region accurately reflects the chip's actual thermal conditions. Temperature is a key factor affecting NAND chip lifespan. Accurate final temperature data allows for a more precise correlation model with chip lifespan, significantly improving the reliability of lifespan predictions.

[0080] S4. Combining temperature, voltage, and write amplification ratio to correct the remaining life of the solid state drive.

[0081] Furthermore, combining temperature, voltage, and write amplification to correct the remaining life of the solid-state drive includes the following steps:

[0082] S41. Calculate WAF, and ,in They are NAND write amount and host write amount respectively;

[0083] S42. Construct a comprehensive life correction model. The specific formula is:

[0084] ;

[0085] in, is the calculated remaining life, is the manufacturer's nominal write amplification, Test the ambient temperature for manufacturers, For abnormal power outages and voltage exceeding ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient;

[0086] S43, outputting the remaining life data.

[0087] It should be noted that in actual use, the actual life of the hard drive may be exhausted prematurely due to factors such as ambient temperature, write mode, and power supply stability; high temperature environment will accelerate the migration of electrons inside the chip, leading to problems such as storage unit threshold voltage drift and charge leakage, shortening the programming life; the write mode tends to concentrate writing in a certain area, which will disrupt the wear leveling mechanism, causing the number of erases and writes in a specific area to far exceed that of other areas, accelerating the failure of the storage units in that area; unstable power supply may cause the write process to be interrupted, causing data errors or damage to storage units, and even causing loss of firmware metadata. The combination of these factors may cause the hard drive to be exhausted prematurely before reaching its theoretical life.

[0088] A system for monitoring the operating status of a solid-state hard disk comprises the following modules: a data monitoring module, a data conversion module, a temperature prediction module, and a remaining life prediction module, wherein the data monitoring module, the data conversion module, the temperature prediction module, and the remaining life prediction module are sequentially communicatively connected;

[0089] Data monitoring module, used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, environment and hardware indicators;

[0090] Data conversion module, used to convert the properties of different solid-state drives into custom indicators;

[0091] The temperature prediction module divides the NAND into different areas and combines the main control temperature with the write speed, read error rate, and ambient temperature to predict the temperature of different NAND areas;

[0092] The remaining life prediction module combines temperature, voltage, and write amplification to correct the remaining life of the solid-state drive.

[0093] A device for monitoring the operating status of a solid-state hard disk comprises a memory, a processor and computer instructions stored in the memory and executed on the processor. When the computer instructions are executed by the processor, any of the above methods is completed.

[0094] A storage medium for monitoring the operating status of a solid-state hard disk is used to store computer instructions. When the computer instructions are executed by a processor, any of the above methods is completed.

[0095] In summary, the present invention establishes a field mapping table for different models of solid-state hard drives and uniformly converts the SMART attributes of different manufacturers into custom indicators, which can effectively solve the data interpretation dilemma caused by inconsistent indicators and large differences in manufacturer definitions; since the units and calculation methods of the SMART attributes of each manufacturer are different, such as the remaining life is presented in specific time periods, and some are expressed in fuzzy levels, and the read and write speed units also exist in various forms such as KB / s, GB / s, etc., it is difficult to directly understand cross-brand hard drive data during monitoring; through unified conversion, all hard drive data are standardized to a consistent standard, eliminating differences in units and calculation logic, and presenting data at the same scale, which is convenient for technicians to quickly conduct horizontal comparative analysis when facing a large number of hard drives of different brands and models, accurately locate equipment with abnormal operation and performance degradation, greatly improve the efficiency and accuracy of massive hard drive operation status detection, and provide a solid data foundation for centralized hard drive operation and maintenance management; the present invention divides the NAND chip into edge, center, and interlayer areas, combines the number of erase and write times with the write speed to obtain the predicted temperature of different areas, and then weights them. The final temperature obtained by processing can make up for the shortcomings of traditional monitoring methods. Most tools can only read the main control temperature, while local high temperatures of NAND flash memory are often difficult to capture in time due to insufficient sensor coverage, which makes the potential overheating risk of the chip undetectable, thereby threatening equipment stability and data security; by predicting the temperatures of different regions, the edges, centers, and interlayers of the NAND chip that are prone to local high temperatures can be accurately obtained. Combined with the final temperature obtained by weighted processing, it can more comprehensively and accurately reflect the actual thermal state of the NAND chip; the present invention can significantly improve the accuracy of life prediction by combining voltage, write amplification factor, and predicted temperature to predict the remaining life of the solid-state drive; by calculating WAF, the relationship between the NAND write volume and the host write volume can be accurately measured to reflect the degree of consumption of the flash memory by actual writes; when constructing a comprehensive life correction model, factors such as temperature, WAF, abnormal power outages and voltage fluctuations are incorporated, and a variety of key real-world situations that affect the life of the solid-state drive are taken into account, and more reliable remaining life data is further output, which is convenient for users to plan data storage and equipment replacement in advance.

[0096] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for monitoring the operating status of a solid-state hard disk, characterized in that: The method comprises the following steps: S1. The core indicators for monitoring different SSDs during operation include health indicators, performance indicators, environment and hardware indicators; S2. Create a field mapping table for different models of solid-state drives to uniformly convert SMART attributes from different manufacturers into custom indicators; S3, combining the main control temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different NAND areas; S31. Divide the NAND chip into edge, center, and interlayer areas, and analyze the erase and write count distribution using SMART data. S32. Build a thermodynamic model based on the main control temperature, write speed, read error rate, and ambient temperature, and calculate the temperature values of different areas of the NAND chip. The specific formula is: ； in, is the calculated temperature value of the NAND hotspot area, is the ambient temperature, The temperature rise between the main control and NAND, and ,in, Main control temperature, To reflect the thermal resistance coefficient of the heat conduction efficiency from the main control to the NAND, is the temperature rise caused by writing, and ,in, is the write speed, is the baseline power consumption, is the thermal resistance coefficient that reflects the efficiency of converting power consumption to temperature rise, is the additional temperature rise due to the read error rate, and ,in, are the read error rate and the read error rate threshold, is the error correction temperature rise coefficient; S33, processing the temperature data of different areas of the NAND chip to obtain the final temperature; S4. Combining temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive; S41. Calculate WAF, and ,in They are NAND write amount and host write amount respectively; S42. Construct a comprehensive life correction model. The specific formula is: ； in, is the calculated remaining life, is the manufacturer's nominal write amplification, Test the ambient temperature for manufacturers, For abnormal power outages and voltage exceeding ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient; S43, outputting the remaining life data.

2. The method for monitoring the operating status of a solid-state hard disk according to claim 1, wherein: The core indicators of monitoring different SSDs during operation, including health indicators, performance indicators, environment and hardware indicators, include the following steps: S11. Monitor health indicators, including remaining lifespan, total amount of written data, number of bad blocks and spare blocks, and SSD wear leveling status. S12. Monitoring performance indicators include read and write speed, latency, interface error rate, and read and write error rate; S13. Monitor the environment and hardware status including main control temperature, ambient temperature, and power supply status, wherein the power supply status includes the number of abnormal power outages and voltage data.

3. The method for monitoring the operating status of a solid-state drive according to claim 2, wherein: The process of establishing a field mapping table for different models of solid-state drives and converting SMART attributes of different manufacturers into custom indicators includes the following steps: S21. Convert the remaining life data of each hard disk into a uniform ratio of 0% to 100%; convert the total write volume into TB, convert the number of bad blocks into an integer, convert the number of spare blocks into a percentage; and convert the wear leveling into a scale of 0-10. S22. Convert the read and write speeds of each hard disk into MB / s, normalize the latency into milliseconds, convert the interface errors into times, and convert the read and write error rates into percentages. S23. Unify the temperature to degrees Celsius and count the number of power outages, and also count the number of times the voltage exceeds ±10%.

4. The method for monitoring the operating status of a solid-state drive according to claim 1, wherein: Processing the temperature data of different areas of the NAND chip to obtain the final temperature includes the following steps: S331. Calculate the final temperature. The specific formula is: ； in, is the final temperature, They are the temperature at the edge, center, and between layers of the NAND chip, are the weight coefficients of the temperature in each region, and their values are 0.2, 0.3, and 0.5 respectively.

5. A system for monitoring the operating status of a solid-state hard disk, characterized in that: The system adopts a method for monitoring the operating status of a solid-state drive according to any one of claims 1 to 4, comprising the following modules: a data monitoring module, a data conversion module, a temperature prediction module, and a remaining life prediction module, wherein the data monitoring module, the data conversion module, the temperature prediction module, and the remaining life prediction module are communicatively connected in sequence; The data monitoring module is used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, environment and hardware indicators; The data conversion module is used to convert the properties of different solid-state drives into custom indicators; The temperature prediction module divides the NAND into different areas and combines the main control temperature with the write speed, read error rate, and ambient temperature to predict the temperature of different NAND areas; The remaining life prediction module combines temperature, voltage, and write amplification to correct the remaining life of the solid state drive.

6. A device for monitoring the operating status of a solid-state hard disk, characterized in that: The method comprises a memory and a processor, and computer instructions stored in the memory and executed on the processor, wherein when the computer instructions are executed by the processor, the method according to any one of claims 1 to 4 is completed.

7. A storage medium for monitoring the operating status of a solid-state hard disk, characterized in that: Used to store computer instructions, which, when executed by a processor, complete the method according to any one of claims 1 to 4.

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