Carrying disc and machine table

Abstract

The invention provides a carrying disc and a machine table, and relates to the technical field of semiconductor manufacturing, and the carrying disc comprises a substrate which is provided with a bearing area for accommodating a wafer; the shading part is located above the substrate, covers the bearing area and is used for shielding heat radiation; the periphery of the shading piece and the periphery of the substrate are provided with heat dissipation gaps used for dissipating heat generated at the position of the bearing area. The shading piece is arranged above the substrate, and meanwhile, the heat dissipation gap is formed between the substrate and the shading piece. According to the scheme, the shading piece can effectively shield heat radiation generated by the lamp tube, and wafer defects are avoided; furthermore, the heat dissipation gaps can disperse heat generated when the wafer is processed, the problem that the electrical property of the wafer is affected by edge thermal accumulation due to the fact that convection of a processing area is blocked after a shading part is additionally arranged is avoided, and the electrical property of a product meets actual requirements.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and particularly to a susceptor and a machine platform. Background Art

[0002] In the metal annealing of SiC (silicon carbide), after depositing metal on the surface of the SiC wafer, the wafer is heated and cooled. By improving the contact characteristics between the metal and the SiC substrate, the ohmic contact performance is enhanced. During the SiC metal annealing process, heaters are provided above and below the susceptor, mainly to achieve more uniform and efficient heating, and to avoid defects or process failures in the SiC wafer due to non-uniform heating. However, the thermal radiation generated by the heater above the susceptor during heating will affect the wafer, causing the BPSG (borophosphosilicate glass) to deform and combine with the upper-layer Ni (nickel), thus generating defects. Summary of the Invention

[0003] The purpose of this application is to provide a susceptor and a machine platform to overcome the problem that the thermal radiation generated by lamp heating in the traditional technology can cause defects in the wafer.

[0004] In a first aspect, this application proposes a susceptor, including: A substrate having a bearing area for accommodating a wafer; A light-shielding member located above the substrate and covering the bearing area to block thermal radiation; There is a heat dissipation gap between the light-shielding member and the periphery of the substrate for the heat generated at the bearing area to dissipate.

[0005] In one embodiment, the heat dissipation gap is uniform and consistent on the opposite surfaces of the light-shielding member and the substrate.

[0006] In one embodiment, the susceptor further includes: A support structure disposed between the substrate and the light-shielding member for forming the heat dissipation gap.

[0007] In one embodiment, fixing holes for accommodating the support structure are provided on the substrate.

[0008] In one embodiment, the height of the support structure is adjustable.

[0009] In one embodiment, the support structure is threadedly connected to the light-shielding member.

[0010] In one embodiment, the support structure is snap-connected to the light-shielding member. In one embodiment, a downwardly extending skirt is provided at the edge of the light-shielding member. In one of the embodiments, heat dissipation grooves are provided on the inner wall of the skirt. In a second aspect, the present application provides a machine platform, including: the carrier plate according to any one of the first aspect; A heater for providing irradiation during the annealing process.

[0011] The above-mentioned carrier plate and machine platform have at least the following advantages: In the present application, a light-shielding member is provided above the substrate, and at the same time, a heat dissipation gap is provided between the substrate and the light-shielding member. With the above solution, the light-shielding member can effectively block the thermal radiation generated by the lamp tube, avoiding wafer defects; further, the heat dissipation gap can disperse the heat generated during the processing of the wafer, avoiding the problem that the convection in the processing area is blocked after adding the light-shielding member, resulting in edge heat accumulation affecting the electrical properties of the wafer, so that the electrical properties of the product meet the actual requirements. Description of the Drawings

[0012] Figure 1 It is a schematic structural diagram of a carrier plate in one embodiment; Figure 2 It is a top view of a substrate in one embodiment; Figure 3 It is a schematic structural diagram of a light-shielding member in another embodiment; Figure 4 It is a schematic structural diagram of a machine platform in one embodiment.

[0013] Reference Signs: 1. Carrier plate; 2. Heater; 3. Substrate; 4. Light-shielding member; 5. Support structure; 6. Fixing hole. Detailed Embodiments

[0014] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0015] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0016] In the case of using "comprising", "having", and "including" described herein, unless explicit limiting terms are used, such as "only", "consisting of", etc., another component may be added. Unless otherwise mentioned, terms in the singular form may include the plural form and should not be construed as having a quantity of one.

[0017] It should be understood that although terms such as "first" and "second" may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present application, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element.

[0018] In the present application, unless otherwise explicitly specified and limited, terms such as "connected" and "coupled" should be understood in a broad sense. For example, it may be directly connected or indirectly connected through an intermediate medium, and may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0019] Please refer to Figure 1 , in one embodiment, a carrier 1 is provided, and the carrier 1 includes: a substrate 3 and a light-shielding member 4.

[0020] The substrate 3 has a bearing area for accommodating a wafer and is used to bear the wafer when annealing the wafer.

[0021] Optionally, a groove is provided on the substrate 3, and the groove is used to accommodate the above-mentioned electrostatic chuck. Exemplarily, the shape of the groove is frustum-shaped, and the size of the opening of the groove is larger than that of the bottom. With this structure, in addition to realizing the accommodation function of the groove, it is also convenient for placing the wafer.

[0022] The light-shielding member 4 is located above the substrate 3 and shields and covers the bearing area for shielding thermal radiation. There is a heat dissipation gap between the light-shielding member 4 and the periphery of the substrate 3 for the heat generated at the bearing area to dissipate.

[0023] Specifically, the thermal radiation is generated by the irradiation of the heater 2 at the upper end of the substrate 3. The heater 2 is used to provide more uniform and efficient heating to avoid defects or process failures of the wafer due to uneven heating. Through high-temperature irradiation, the heater 2 can generate high-intensity thermal radiation in a short time and quickly heat up to 850 - 1100 °C to meet the requirements of metal silicidation and ohmic contact optimization. Exemplarily, the heater 2 uses a lamp tube capable of providing high-temperature irradiation, such as a halogen lamp, a xenon flash lamp, a carbon rod infrared lamp, or a far-infrared ceramic lamp tube. In practical applications, an appropriate lamp tube can be selected according to needs.

[0024] Furthermore, during the annealing process of the wafer, a large amount of heat is generated. If a light-shielding member 4 is added to the substrate 3 and the light-shielding member 4 and the substrate 3 form a sealed space, the heat convection in the processing area will be blocked, resulting in edge heat accumulation. In this case, the temperature of the edge area will greatly exceed the temperature of the central area, which will affect the electrical properties of the wafer edge. Based on this, in the embodiment of the present application, a heat dissipation gap is provided between the substrate 3 and the light-shielding member 4 to allow the heat to dissipate from the heat dissipation gap.

[0025] It should be noted that the light-shielding member 4 in the embodiment of the present application is made of a high-temperature resistant material. Exemplarily, the high-temperature resistant material can be selected as SIC-coated graphite material. In addition to having light-shielding properties, this material also has good thermal conductivity and indirectly conducts heat while shielding light.

[0026] In the above-mentioned carrier 1, a light-shielding member 4 is provided above the substrate 3 to block the thermal radiation generated by the lamp tube and avoid wafer defects; at the same time, a heat dissipation gap is provided between the substrate 3 and the light-shielding member 4 to dissipate the heat in time, avoid the phenomenon of edge heat accumulation, and ensure that the electrical properties of the wafer meet the actual requirements.

[0027] Optionally, the heat dissipation gap is uniform and consistent on the relative surfaces of the light-shielding member 4 and the substrate 3. Adopting this structure helps to evenly dissipate the heat, avoid local heat accumulation, which affects the consistency of wafer processing; further, the uniform dissipation of heat can also improve the heat dissipation efficiency and maintain temperature stability; further, the uniform setting of the heat dissipation gap can also reduce the mechanical stress caused by the temperature difference and extend the service life of the light-shielding member 4.

[0028] Optionally, the above-mentioned carrier 1 further includes: a support structure 5.

[0029] The support structure 5 is arranged between the substrate 3 and the light-shielding member 4 and is used to form a heat dissipation gap.

[0030] Specifically, the support structure 5 is arranged on the side of the light-shielding member 4 close to the substrate 3. Before annealing the wafer, the light-shielding member 4 carrying the support structure 5 is placed above the substrate 3, and the support structure 5 and the substrate 3 structure form the above-mentioned heat dissipation gap. It should be understood that the above-mentioned support structure 5 also needs to be made of a high-temperature resistant material.

[0031] Please refer to Figure 2 , optionally, the substrate 3 is provided with a fixing hole 6, and the fixing hole 6 is used to accommodate the support structure 5.

[0032] Specifically, when the support structure 5 contacts the substrate 3, the bottom of the support structure 5 is located in the fixing hole 6 to prevent the displacement of the light-shielding member 4 during the annealing process. It should be understood that the aperture of the fixing hole 6 is slightly larger than the aperture of the bottom of the support structure 5.

[0033] Optionally, a chamfer is provided at the entrance of the fixing hole 6 to guide the installation of the supporting structure 5 .

[0034] Optionally, the fixing hole 6 can also be set as a special-shaped hole. Exemplarily, the fixing hole 6 can be set as Figure 2 The triangle shown in the figure, or the hexagonal or plum blossom shape. With this structure, the bottom of the supporting structure 5 can be embedded in the fixing hole 6 to increase stability.

[0035] Optionally, the height of the support structure 5 is not adjustable, and in this case, the connection between the support structure 5 and the shading member 4 includes a detachable connection and a fixed connection. Among them, the detachable connection can adopt the above-mentioned snap connection method. For example, the support structure 5 includes an elastic member and a limiter, and the shading member 4 is provided with a channel and a slot. When installing, the limiter is inserted into the channel, and the support structure 5 is pressed downward or rotated. Under the joint action of the spring force and the slot, the limiter can be fixed in the slot, so that the support structure 5 can be quickly installed and removed.

[0036] Optionally, in order to make the support structure 5 bear force uniformly, the number of the support structures can be multiple. For example, when the number of the support structures is two, the two support structures are symmetrically arranged at both ends of the shading member 4; when the number of the support structures is more than two, each support structure is evenly distributed around the shading member 4. It should be understood that the number of the fixing holes 6 matches the number of the support structures.

[0037] If the connection between the support structure 5 and the shading member 4 is a fixed connection, illustratively, the shading member 4 has a plurality of protrusions extending from one end thereof facing the substrate 3, and each protrusion constitutes the support structure 5. In this way, by placing the protrusions in the corresponding fixing holes 6, the support structure 5 and the shading member 4 can be quickly installed and removed.

[0038] It should be understood that the number and structure of the above-mentioned protrusions are similar to those of the above-mentioned quartz screws. Correspondingly, the definition of the fixing holes 6 on the substrate 3 is also similar to the fixing holes 6 disclosed in the above-mentioned embodiment. To save space, they will not be repeated here.

[0039] Optionally, the support structure 5 is height-adjustable.

[0040] Specifically, the height of the heat dissipation gap will affect the heat dissipation effect. If the heat dissipation gap is too small, heat is easily accumulated, which may cause the wafer temperature to rise and affect the process stability. If the heat dissipation gap is too large, a temperature gradient may be formed, affecting the temperature uniformity. Therefore, by adjusting the height of the support structure 5, the heat dissipation gap can take into account both heat dissipation efficiency and uniformity, which is suitable for various process requirements.

[0041] Optionally, the support structure 5 and the light-shielding member 4 are connected by threads. Exemplarily, the support structure 5 uses quartz screws, and one end of the quartz screw is a threaded structure and the other end is a columnar structure. At this time, threaded holes corresponding to the above-mentioned threaded structure are provided on the light-shielding member 4 for the quartz screws to be screwed in. Further, the columnar structure matches the shape of the fixing hole 6 involved in the above embodiment. By controlling the screwing depth of the quartz screw into the light-shielding member 4, the height of the heat dissipation gap can be adjusted. Further, to make the force on the support structure 5 uniform, the number of quartz screws can be multiple, and the multiple quartz screws are symmetrically arranged around the light-shielding member 4. Exemplarily, the number of quartz screws can be two, and the two quartz screws are symmetrically arranged at both ends of the light-shielding member 4. When the number of quartz screws is more than two, each quartz screw is evenly distributed around the light-shielding member 4. It should be understood that the number of fixing holes 6 matches the number of quartz screws.

[0042] Optionally, the support structure 5 and the light-shielding member 4 are snap-connected. Exemplarily, card slots with different heights are provided on the support structure 5, and snaps with elastic arms are provided on the light-shielding member 4. During installation, the elastic arms are deformed under pressure and then embedded into the respective card slots, thereby realizing adjustment of different heights.

[0043] In the above-mentioned carrier 1, a support structure 5 is provided between the substrate 3 and the light-shielding member 4, and the height of the support structure 5 is adjustable, which can make the heat dissipation gap take into account both the heat dissipation efficiency and uniformity, and is applicable to various process requirements. In addition, the support structure 5 is connected by screws or snaps to achieve rapid installation and disassembly of the support structure 5.

[0044] It should be noted that the connection method between the above-mentioned support structure 5 and the light-shielding member 4 is only an example, and in actual applications, a suitable connection method can be selected according to actual needs.

[0045] Please refer to Figure 3 , optionally, a skirt extending downward is provided at the edge of the light-shielding member 4.

[0046] Specifically, the skirt extending in the vertical direction of the light-shielding member 4 can reduce the heat radiated outward from the edge of the substrate 3 and improve the temperature uniformity of the substrate 3. Further, to avoid the skirt being too long, resulting in heat retention and affecting the heat dissipation efficiency of the substrate 3, the length of the skirt in the embodiment of the present application is limited within 10 mm.

[0047] Optionally, heat dissipation grooves are provided on the inner wall of the skirt.

[0048] Specifically, providing heat dissipation grooves inside the skirt is equivalent to adding multiple heat dissipation channels on the inner wall of the skirt, increasing the surface area, making heat easily dissipate through radiation and convection, reducing the retention of hot air, and improving the heat exchange efficiency while also improving the heat dissipation uniformity.

[0049] For the above-mentioned carrier 1, a light-shielding member 4 is provided above the substrate 3 to block the heat radiation generated by the lamp tube and avoid wafer defects. At the same time, a heat dissipation gap is provided between the substrate 3 and the light-shielding member 4 to dissipate heat in time, avoid edge heat accumulation, and ensure that the electrical properties of the wafer meet the actual requirements.

[0050] Furthermore, a support structure 5 is provided between the substrate 3 and the light-shielding member 4, and the support structure 5 forms a heat dissipation gap. The connection mode between the support structure 5 and the light-shielding member 4 includes detachable connection and fixed connection, which is used to realize the rapid installation and disassembly of the support structure 5.

[0051] Furthermore, the height of the support structure 5 is adjustable. By adjusting the height of the support structure 5, the heat dissipation gap can take into account both heat dissipation efficiency and uniformity, and is suitable for various process requirements.

[0052] Furthermore, a skirt extending downward is provided at the edge of the light-shielding member 4, which can reduce the heat radiated outward from the edge of the substrate 3 and improve the temperature uniformity of the substrate 3.

[0053] Furthermore, heat dissipation grooves are provided inside the skirt, so that heat can be easily dissipated through radiation and convection, reducing the retention of hot air. While improving the heat exchange efficiency, the heat dissipation uniformity is also improved.

[0054] Please refer to Figure 4 , optionally, an embodiment of the present application further provides a machine tool, including: a carrier 1 and a heater 2.

[0055] The heater 2 is provided above and below the light-shielding member 4 of the carrier 1, and is used to provide irradiation during the annealing process to provide more uniform and efficient heating for the wafer, and avoid defects or process failures of the wafer due to uneven heating.

[0056] The carrier 1 includes a substrate 3 and a light-shielding member 4. The light-shielding member 4 is provided above the substrate 3 and covers and blocks the bearing area, and is used to block the heat radiation generated when the heater 2 above the carrier 1 irradiates. Among them, the specific structure of the carrier 1 is the same as the structure of the carrier 1 disclosed in the above embodiment. For the sake of brevity, it will not be described in detail here.

[0057] For the above-mentioned machine tool, the heater 2 provides irradiation during the annealing process to provide more uniform and efficient heating for the wafer, and avoid defects or process failures of the wafer due to uneven heating. The light-shielding member 4 provided above the substrate 3 is used to block the heat radiation generated by the heater 2 and avoid wafer defects. At the same time, a heat dissipation gap is provided between the substrate 3 and the light-shielding member 4 to dissipate heat in time, avoid edge heat accumulation, and ensure that the electrical properties of the wafer meet the actual requirements.

[0058] Please note that the above embodiments are for illustrative purposes only and do not imply any limitation to the present application.

[0059] The various embodiments in this specification are all described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0060] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity in description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as within the scope described in this specification.

[0061] The above-described embodiments merely represent several implementation manners of this application. The description is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of this application, several modifications and improvements can still be made, and these all belong to the protection scope of this application. Therefore, the protection scope of the patent of this application shall be subject to the appended claims.

Claims

1. A carrier tray, characterized in that, Comprising: A substrate having a loading area for accommodating wafers; A light-shielding member located above the substrate and covering and shielding the loading area for shielding thermal radiation; A heat dissipation gap is provided between the periphery of the light-shielding member and the substrate for the heat generated at the loading area to dissipate.

2. The carrier tray according to claim 1, wherein The heat dissipation gap is uniform on the opposite surfaces of the light-shielding member and the substrate.

3. The carrier tray according to claim 2, wherein, Further comprising: A support structure disposed between the substrate and the light-shielding member for forming the heat dissipation gap.

4. The carrier tray according to claim 3, wherein, Fixing holes for accommodating the support structure are provided on the substrate.

5. The carrier tray according to claim 3, wherein, The height of the support structure is adjustable.

6. The carrier tray according to claim 5, wherein, The support structure is threadedly connected to the light-shielding member.

7. The carrier according to claim 5, characterized in that, The support structure is snap-connected to the light-shielding member.

8. The carrier tray according to claim 1, wherein, A skirt extending downward is provided at the edge of the light-shielding member.

9. The carrier according to claim 8, characterized in that, Heat dissipation grooves are provided on the inner wall of the skirt.

10. A machine, characterized in that, Comprising: A carrier plate according to any one of claims 1-9; A heater for providing irradiation during the annealing process.

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