High-voltage silicon stack

Abstract

The invention provides a high-voltage silicon stack. The high-voltage silicon stack comprises a substrate, a plurality of first side conductive pieces, a plurality of second side conductive pieces and communicating pieces, the substrate is provided with a first side face and a second side face which are opposite to each other, and at least part of the first side conductive pieces are arranged on the first side face in a staggered mode in the first direction. At least part of the second side conductive pieces are arranged on the second side face in a staggered mode in the first direction, the communicating pieces are cylindrical and penetrate through the substrate, the multiple first side conductive pieces and the multiple second side conductive pieces are arranged in a staggered mode in the second direction, and the communicating pieces are arranged between the first side conductive pieces and the adjacent second side conductive pieces; the second direction and the substrate satisfy a vertical condition, and the second direction and the first direction satisfy a vertical condition. Therefore, heat in the high-voltage silicon stack is dispersed more uniformly, and the heat dissipation effect is better. And the communicating pieces can guarantee circulation of heat on the two sides of the substrate, the heat dispersion uniformity is further improved, and the structure is simpler and more compact.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and more particularly, to a high-voltage silicon stack. Background Art

[0002] As an important rectifying device in a high-voltage power supply, a high-voltage silicon stack plays roles such as rectifying and filtering, voltage conversion, voltage multiplication rectification, and isolation protection in a power circuit.

[0003] A high-voltage silicon stack usually consists of multiple rectifying diodes arranged in sequence along a predetermined direction and connected in series in sequence. During operation, by using the unidirectional conductivity of the diode, sinusoidal alternating current is rectified into unidirectional direct current to ensure the unidirectional flow of current. At the same time, by virtue of the characteristic that the diode prevents the reverse current from passing through, other devices in the circuit are protected from damage by reverse voltage, realizing the isolation protection function.

[0004] However, such a high-voltage silicon stack has problems such as a complex structure and low space utilization. Heat is generated during the operation of the rectifying diode, and there are also problems such as uneven heat distribution and poor heat dissipation effect in the high-voltage silicon stack. Summary of the Invention

[0005] To at least partially solve the problems existing in the prior art, according to one aspect of the present invention, a high-voltage silicon stack is provided. The high-voltage silicon stack includes a substrate having a first side and a second side opposite to each other; a plurality of first-side conductive members, at least some of the first-side conductive members being arranged alternately along a first direction on the first side; a plurality of second-side conductive members, at least some of the second-side conductive members being arranged alternately along the first direction on the second side; and a connecting member, the connecting member being cylindrical and penetrating the substrate; wherein, the plurality of first-side conductive members and the plurality of second-side conductive members are arranged offset in a second direction, the connecting member is disposed between a first-side conductive member and an adjacent second-side conductive member, the second direction is perpendicular to the substrate, and the second direction is perpendicular to the first direction.

[0006] Exemplarily, the plurality of first-side conductive members are arranged in at least two columns, the axes of the first-side conductive members in each column are parallel to each other, and the axes of the first-side conductive members in adjacent two columns have an included angle.

[0007] Exemplarily, the plurality of second-side conductive members are arranged in at least two columns, the axes of the second-side conductive members in each column are parallel to each other, and the axes of the second-side conductive members in adjacent two columns have an included angle.

[0008] Exemplarily, the first direction is the length direction of the substrate.

[0009] Exemplarily, ceramic heat-conducting sheets are pasted on the side of the first-side conductive member facing away from the substrate and on the side of the second-side conductive member facing away from the substrate.

[0010] Exemplarily, a heat dissipation component is attached to the side of the ceramic heat conduction sheet facing away from the substrate.

[0011] Exemplarily, the heat dissipation component includes a first sphere and a second sphere connected to the first sphere. A first contact surface is formed on one side of the first sphere and is attached to the ceramic heat conduction sheet. A second contact surface is formed at one end of the first sphere away from the first contact surface. A third contact surface is formed at one end of the second sphere facing the second contact surface and is attached to the second contact surface.

[0012] Exemplarily, the orthographic projections of the plurality of first-side conductive components on the substrate and the orthographic projections of the plurality of second-side conductive components on the substrate do not have overlapping parts.

[0013] Exemplarily, a packaging heat conduction component is provided on the outer side of the substrate. The packaging heat conduction component is filled with a first filler and a second filler. The sizes of the first filler and the second filler are different. The substrate, the first-side conductive components, and the second-side conductive components are all located within the packaging heat conduction component. The connecting component penetrates through the packaging heat conduction component.

[0014] Exemplarily, wind guiding ribs are provided on the inner wall of the connecting component, and the wind guiding ribs are spirally arranged along the second direction.

[0015] For the high-voltage silicon stack provided in the present application, the staggered arrangement of the first-side conductive components and the staggered arrangement of the second-side conductive components enable more conductive components to be provided without changing the overall spatial size, thereby improving the performance of the high-voltage silicon stack. More complex heat dissipation channels can be formed between the conductive components on the same side, resulting in better heat dissipation effects. The staggered arrangement of the first-side conductive components and the second-side conductive components along the second direction makes the heat in the high-voltage silicon stack more evenly dispersed. The connecting component is provided between adjacent first-side conductive components and second-side conductive components, ensuring the heat flow on both sides of the substrate and further improving the uniformity of heat dispersion. One connecting component can correspond to one first-side conductive component and one second-side conductive component, with a simpler and more compact structure, higher space utilization rate, and better meeting the requirements of small volume and high power.

[0016] A series of simplified concepts are introduced in the Summary of the Invention, which will be further elaborated in detail in the Detailed Description section. The Summary of the Invention section is not intended to attempt to define the key features and essential technical features of the claimed technical solution, nor is it intended to attempt to determine the protection scope of the claimed technical solution.

[0017] The following will, with reference to the accompanying drawings, elaborate in detail on the advantages and features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following drawings of the present invention are hereby incorporated as part of the present invention for understanding the present invention. The embodiments and descriptions thereof shown in the drawings are used to explain the principles of the present invention. In the drawings: Figure 1Is a perspective view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 2 Is a perspective view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 3 Is a side view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 4 Is a perspective view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 5 Is a top view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 6 Is a bottom view of a high-voltage silicon stack according to an exemplary embodiment of the present invention; Figure 7 Is a perspective view of a first side conductive member, a ceramic heat-conducting sheet, and a heat dissipating member according to an exemplary embodiment of the present invention; Wherein, the above-mentioned drawings include the following reference numerals: 10, high-voltage silicon stack; 110, substrate; 1110, first side; 1120, second side; 120, first side conductive member; 130, second side conductive member; 140, connecting member; 150, ceramic heat-conducting sheet; 160, heat dissipating member; 1610, first sphere; 1620, second sphere; 170, encapsulating heat-conducting member. Detailed implementation manners

[0019] In the following description, a large number of details are provided to enable a thorough understanding of the present invention. However, those skilled in the art can understand that the following description only exemplarily shows the preferred embodiments of the present invention, and the present invention can be implemented without one or more such details. In addition, in order to avoid confusion with the present invention, some technical features well known in the art are not described in detail.

[0020] In order to thoroughly understand the embodiments of the present invention, detailed structures will be presented in the following description. Obviously, the implementation of the embodiments of the present invention is not limited to the special details familiar to those skilled in the art. The preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention can also have other embodiments.

[0021] In an embodiment of the present invention, a high-voltage silicon stack is provided. With reference to Figure 1 , Figure 2 , Figure 5 and Figure 6, the high-voltage silicon stack 10 may include: a substrate 110, a plurality of first-side conductive members 120, a plurality of second-side conductive members 130, and a connecting member 140. The substrate 110 may have a first side surface 1110 and a second side surface 1120 that face each other. The substrate 110 may be a ceramic printed circuit board (Printed Circuit Board, abbreviated as PCB), having good insulation and high-temperature resistance, and relatively high heat conduction and heat dissipation capabilities. At least part of the first-side conductive members 120 are arranged in a staggered manner along the first direction X-X on the first side surface 1110. At least part of the second-side conductive members 130 are arranged in a staggered manner along the first direction X-X on the second side surface 1120. The first-side conductive members 120 and the second-side conductive members 130 may be diodes, welded to the substrate 110, and responsible for high-voltage rectification. Alternatively, the first-side conductive members 120 and the second-side conductive members 130 may be any other semiconductor devices that can be used for rectification functions. The connecting member 140 may be cylindrical and penetrate the substrate 110. The connecting member 140 may be arranged along the second direction Y-Y and penetrate the substrate 110, or may be arranged in any other direction, as long as it can connect the spaces on the opposite sides of the substrate 110.

[0022] Among them, the plurality of first-side conductive members 120 and the plurality of second-side conductive members 130 may be arranged staggeredly along the second direction Y-Y. The connecting member 140 may be arranged between the first-side conductive member 120 and the adjacent second-side conductive member 130. The second direction Y-Y is perpendicular to the substrate 110, and the second direction Y-Y is perpendicular to the first direction X-X. The staggered arrangement of the plurality of first-side conductive members 120 and the plurality of second-side conductive members 130 along the second direction Y-Y can be understood as follows: in the second direction Y-Y, the first-side conductive members 120 and the second-side conductive members 130 do not overlap. Looking at the side of the substrate 110, referring to Figure 3 , along the first direction X-X, they are arranged in an alternating up-and-down pattern such as the first-side conductive member 120, the second-side conductive member 130, the first-side conductive member 120, the second-side conductive member 130, and so on. The connecting member 140 is arranged between the adjacent first-side conductive member 120 and the second-side conductive member 130 to connect the spaces on both sides. The openings at both ends of the connecting member 140, one is close to the first-side conductive member 120, and the other is close to the second-side conductive member 130 adjacent to the first-side conductive member 120. The number of the connecting members 140 may be multiple. The connecting members 140 may be arranged in one-to-one correspondence with the first-side conductive members 120, and at the same time, in one-to-one correspondence with the second-side conductive members 130. The connecting member 140 may be a ceramic tube.

[0023] Generally, there are three heat dissipation power consumption components when a high-voltage silicon stack is working: one is the forward conduction power consumption of the diode, which is the main heat source and is obtained by multiplying and accumulating the forward conduction voltage drop of a single chip, the forward working current, and the number of chips of multiple high-voltage silicon stack chips. The second is the reverse leakage current power consumption, that is, the product of the reverse breakdown voltage of a single chip, the reverse leakage current, and the number of chips; at room temperature, due to the extremely small reverse leakage current, this power consumption accounts for a low proportion and belongs to a secondary heat generation factor. However, as the temperature rises, the intrinsic excitation of the semiconductor intensifies, and the reverse leakage current increases exponentially. When the heat dissipation is insufficient and the temperature breaks through the critical value, the reverse power consumption surges, and at the same time, the reverse breakdown voltage drops rapidly, forming a vicious cycle of "temperature rise - power consumption - temperature rise", ultimately leading to reverse thermal breakdown failure. The third is the switching loss under high-frequency conditions, which results from the charge and discharge of the diode junction capacitance and the carrier storage effect. Its value is related to the switching frequency and the junction capacitance parameters, and temperature changes will significantly affect the carrier mobility, thereby changing the switching loss characteristics.

[0024] For the high-voltage silicon stack 10 provided in this application, the staggered arrangement of the first-side conductive members 120 and the staggered arrangement of the second-side conductive members 130 can increase the number of conductive members while keeping the overall spatial size unchanged, improving the performance of the high-voltage silicon stack 10. More complex heat dissipation channels can be formed between the conductive members on the same side, resulting in better heat dissipation effects. The first-side conductive members 120 and the second-side conductive members 130 are arranged in a staggered manner along the second direction Y-Y, making the heat in the high-voltage silicon stack 10 disperse more evenly. The connecting member 140 is arranged between adjacent first-side conductive members 120 and second-side conductive members 130 to ensure the heat flow on both sides of the substrate 110, further improving the uniformity of heat dispersion. One connecting member 140 can correspond to one first-side conductive member 120 and one second-side conductive member 130, with a simpler and more compact structure, higher space utilization rate, and better meeting the requirements of small volume and high power.

[0025] Exemplarily, with reference to Figure 1 、 Figure 2 and Figure 5 , multiple first-side conductive members 120 can be arranged in at least two columns. The axes of the first-side conductive members 120 in each column satisfy the parallel condition, and the axes of the first-side conductive members 120 in adjacent two columns have an included angle. Herein, the axis can be understood as the length direction of the conductive member. Or, from the perspective of the pins of the conductive member, the axis can be understood in this way. Each conductive member has a first pin and a second pin, and there is a connection line between the connection ends of the first pin and the second pin. The axis is perpendicular to the connection line and parallel to the substrate 110. With such an arrangement, the first-side conductive members 120 in each column are parallel to each other, but the angles of the first-side conductive members 120 in adjacent two columns are different. The arrangement of the first-side conductive members 120 is more reasonable, and the heat dissipation effect is better. Taking Figure 5Taking the embodiments and perspectives shown in [reference] as an example, the first-side conductive member 120 includes three columns, and the inclination directions of the first-side conductive members 120 in the three columns are different from each other. Among them, the axes of the first-side conductive members 120 in the first column and the second column from top to bottom have the same angle (but different directions) with the first direction X-X, and the angle can be 60° in both cases. The axis of the first-side conductive member 120 in the third column can be perpendicular to the first direction X-X.

[0026] Exemplarily, with reference to Figure 1 , Figure 2 and Figure 6 , multiple second-side conductive members 130 can be arranged in at least two columns. The axes of the second-side conductive members 130 in each column can meet the parallel condition, and the axes of the second-side conductive members 130 in adjacent two columns can have an included angle. With such an arrangement, the first-side conductive members 120 in each column are parallel to each other, but the angles of the first-side conductive members 120 in adjacent two columns are different. The second-side conductive members 130 are arranged more reasonably, and the heat dissipation effect is better. Taking the Figure 6 embodiments and perspectives shown in [reference] as an example, the second-side conductive member 130 includes three columns, and the inclination directions of the second-side conductive members 130 in the three columns are different from each other. Among them, the axes of the second-side conductive members 130 in the first column and the second column from top to bottom have the same angle (but different directions) with the first direction X-X, and the angle can be 60° in both cases. The axis of the second-side conductive member 130 in the third column can be perpendicular to the first direction X-X.

[0027] Exemplarily, in combination with Figure 2 , Figure 5 and Figure 6 , the number of columns of the second-side conductive members 130 can be the same as that of the first-side conductive members 120 and they are in a one-to-one correspondence in each column, that is, Figure 5 the first column from top to bottom (i.e., the uppermost column) in [reference] and Figure 6 the first column from bottom to top (i.e., the lowermost column) in [reference] are respectively located on the opposite sides of the same part of the substrate 110, and the axes of the first-side conductive members 120 and the second-side conductive members 130 in these two columns have an included angle. Further optimizing the layout improves the heat dissipation effect.

[0028] Exemplarily, with reference to Figure 1 , Figure 2 and Figure 3 , the first direction X-X can be the length direction of the substrate 110. In this way, it is beneficial for heat to conduct along the length direction of the substrate 110, and there is more space and paths for heat dissipation, which can effectively reduce the operating temperatures of the first-side conductive member 120 and the second-side conductive member 130, and improve the operating performance and stability of the first-side conductive member 120 and the second-side conductive member 130. The space utilization rate is higher, and the rectifying ability of the high-voltage silicon stack 10 can be increased without increasing the size of the substrate 110.

[0029] Exemplarily, with reference to Figure 1 and Figure 7 , on the side of the first-side conductive member 120 facing away from the substrate 110 and on the side of the second-side conductive member 130 facing away from the substrate 110, ceramic heat-conducting sheets 150 are attached. The ceramic heat-conducting sheets 150 have good heat-conducting performance and can quickly dissipate the heat generated when the first-side conductive member 120 and the second-side conductive member 130 are working, preventing the performance degradation or damage of the first-side conductive member 120 and the second-side conductive member 130 due to overheating, and improving the stability and reliability of the high-voltage silicon stack 10. At the same time, the ceramic material also has insulating performance and can play a role in isolating static electricity, avoiding the influence of static electricity on the high-voltage silicon stack 10 and ensuring the normal operation of the high-voltage silicon stack 10. The ceramic heat-conducting sheets 150 have higher mechanical strength and can buffer the mechanical stress between the heat-conducting member and other structural members, reducing the risk of damage caused by vibration, impact, etc. Exemplarily, one side of the ceramic heat-conducting sheet 150 can be copper-clad and welded to the corresponding first-side conductive member 120 or second-side conductive member 130, and the other side can also be copper-clad and welded to the heat-dissipating member 160.

[0030] Exemplarily, with reference to Figure 1 , Figure 2 and Figure 7 , on the side of the ceramic heat-conducting sheet 150 facing away from the substrate 110, a heat-dissipating member 160 can be attached. In this way, the heat-dissipating area and heat-conduction performance can be increased, the heat-dissipating effect can be further enhanced, the heat transferred by the ceramic heat-conducting sheet 150 can be quickly dissipated into the surrounding environment, and the working temperatures of the first-side conductive member 120 and the second-side conductive member 130 can be effectively reduced. Moreover, the heat-dissipating member 160 can play a role in temperature equalization, making the heat distribution between the first-side conductive members 120 and the second-side conductive members 130 in the high-voltage silicon stack 10 more uniform, avoiding local overheating, thereby improving the stability and reliability of the high-voltage silicon stack 10 and ensuring its normal operation under high-load and long-time operation conditions.

[0031] Exemplarily, with reference to Figure 1 , Figure 3 and Figure 7, the heat sink 160 may include a first sphere 1610 and a second sphere 1620 connected to the first sphere 1610. A first contact surface may be formed on one side of the first sphere 1610 and be attached to the ceramic heat conducting sheet 150. A second contact surface may be formed at one end of the first sphere 1610 away from the first contact surface. A third contact surface may be formed at one end of the second sphere 1620 facing the second contact surface and be attached to the second contact surface. The heat sink 160 arranged in this way has a spherical structure with a smooth curved surface, which can reduce electric field distortion and adjust the electric field distribution. With the spherical structure, heat dissipation can be more uniform, the surface area is relatively large, effectively improving the heat dissipation efficiency. Moreover, the structure of the heat sink 160 arranged in this way is more rounded, with less resistance when air flows through, improving the cooling effect. The first sphere 1610 and the second sphere 1620 may be arranged in a connected manner along the second direction Y - Y. The heat sink 160 may be made of copper metal material. The heat sink 160 may be a double - copper - ball structure. The heat sink 160 may be connected to the corresponding first - side conductive member 120 or second - side conductive member 130 through bolts. Specifically, the bolts may pass through the first - side conductive member 120 (or the second - side conductive member 130), the electromagnetic heat conducting sheet and extend into the heat conducting member for fixation. Exemplarily, bolt holes may be provided on the substrate 110. The first contact surface, the second contact surface and the third contact surface can increase the contact area, further ensuring the heat transfer efficiency.

[0032] Exemplarily, with reference to Figure 2 , Figure 5 and Figure 6 , the orthographic projections of the plurality of first - side conductive members 120 on the substrate 110 and the orthographic projections of the plurality of second - side conductive members 130 on the substrate 110 may not have overlapping parts. In this way, for the entire high - voltage silicon stack 10, the distribution of the heat - releasing heat sources (i.e., the first - side conductive members 120 and the second - side conductive members 130) is more dispersed, avoiding local overheating. Exemplarily, in the embodiment provided with the heat sink 160, the orthographic projections of the heat sinks 160 located on different sides of the substrate 110 on the substrate 110 may not have overlapping parts.

[0033] Exemplarily, with reference to Figure 1 and Figure 4, a heat - dissipating encapsulant 170 can be provided on the outer side of the substrate 110. The heat - dissipating encapsulant 170 can be filled with a first filler and a second filler. The sizes of the first filler and the second filler can be different. The substrate 110, the first - side conductive member 120, and the second - side conductive member 130 can all be located within the heat - dissipating encapsulant 170, and the connecting member 140 can be disposed through the heat - dissipating encapsulant 170. The first filler and the second filler are insulating and heat - conductive materials with different particle sizes. The heat - dissipating encapsulant 170 can be epoxy resin. In the embodiments provided with heat - conductive members, part of the structure of the heat - conductive member can be located within the heat - dissipating encapsulant 170, and part of the structure can be located outside the heat - dissipating encapsulant 170. The setting of the heat - dissipating encapsulant 170 can effectively isolate each structural member in the high - voltage silicon stack 10, prevent leakage and short - circuit phenomena from occurring, ensure the safe and stable operation of the high - voltage silicon stack 10 in a high - voltage environment, and improve its electrical insulation performance and reliability. Moreover, it plays a mechanical support and protection role for the internal chips and circuits, can buffer external impact forces and vibrations, reduce the possibility of damage or circuit connection loosening caused by external forces, and enhance the overall mechanical strength of the high - voltage silicon stack 10. A better filling effect can reduce the thermal conductivity of the material and improve its thermal stability. The setting of the first filler and the second filler can fill the pores with each other. The small - size filler can enter the gaps between the large - size fillers, improving the density and uniformity of the heat - dissipating encapsulant 170, and making the structure more stable. The combination of the two - size fillers can form an internal heat - conduction bridge path, enabling faster heat transfer and better heat - conduction performance.

[0034] Exemplarily, air - guiding ribs can be provided on the inner wall of the connecting member 140, and the air - guiding ribs are spirally arranged along the second direction Y - Y. The setting of the air - guiding ribs can make the air flow in the connecting member 140 flow in a specific direction, avoid air - flow disorder, improve the stability and controllability of the air flow, and ensure the air flow on the opposite sides of the substrate 110. Optimize the air - flow path, reduce the resistance when the air flow flows in the connecting member, reduce energy loss, and improve the gas - flow efficiency.

[0035] Exemplarily, electrode nuts can be provided on the substrate 110 for connecting to an external circuit.

[0036] In the description of the present invention, it should be understood that orientation words such as "front", "rear", "upper", "lower", "left", "right", "lateral", "vertical", "perpendicular", "horizontal", and "top", "bottom", etc. usually indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description. Without contrary explanation, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the protection scope of the present invention; the orientation words "inner" and "outer" refer to the inside and outside relative to the contour of each component itself.

[0037] For ease of description, regional relative terms such as "above", "over", "on the upper surface", "upper", etc. can be used here to describe the regional positional relationship between one or more components or features shown in the figure and other components or features. It should be understood that regional relative terms not only include the orientation of components described in the figure, but also different orientations during use or operation. For example, if the components in the attached figure are inverted as a whole, the components "above other components or features" or "over other components or features" will include the situation where the components are "below other components or structures" or "under other components or structures". Thus, the exemplary term "above" can include both the orientations of "above" and "below". In addition, these components or features can also be positioned at other different angles (such as rotated 90 degrees or other angles), and this document intends to cover all such situations.

[0038] It should be noted that the terms used here are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used here, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, components, assemblies, and / or combinations thereof.

[0039] It should be noted that the terms "first", "second", etc. in the description and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here.

[0040] The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are only for the purpose of example and illustration, and are not intended to limit the present invention within the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications all fall within the scope of protection required by the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalent scope.

Claims

1. A high-voltage silicon stack, characterized in that, Comprising: a substrate having a first side surface and a second side surface opposite to each other; a plurality of first-side conductive members, at least a part of the first-side conductive members being arranged in an interleaved manner in a first direction on the first side surface; a plurality of second-side conductive members, at least a part of the second-side conductive members being arranged in an interleaved manner in the first direction on the second side surface; and a connecting member in a cylindrical shape and penetrating through the substrate; wherein, the plurality of first-side conductive members and the plurality of second-side conductive members are arranged offset in a second direction, the connecting member is arranged between the first-side conductive member and the adjacent second-side conductive member, the second direction is perpendicular to the substrate, and the second direction is perpendicular to the first direction.

2. The high-voltage silicon stack according to claim 1, wherein The plurality of first-side conductive members are arranged in at least two columns, the axes of the first-side conductive members in each column meet the parallel condition, and the axes of the first-side conductive members in adjacent two columns have an included angle.

3. The high-voltage silicon stack according to claim 2, wherein The plurality of second-side conductive members are arranged in at least two columns, the axes of the second-side conductive members in each column meet the parallel condition, and the axes of the second-side conductive members in adjacent two columns have an included angle.

4. The high-voltage silicon stack according to claim 1, characterized in that, The first direction is the length direction of the substrate.

5. The high-voltage silicon stack according to claim 1, characterized in that, Ceramic heat-conducting sheets are attached to the side of the first-side conductive member away from the substrate and the side of the second-side conductive member away from the substrate.

6. The high-voltage silicon stack according to claim 5, wherein, A heat-dissipating member is attached to the side of the ceramic heat-conducting sheet away from the substrate.

7. The high-voltage silicon stack according to claim 6, wherein The heat-dissipating member includes a first sphere and a second sphere connected to the first sphere. A first contact surface is formed on one side of the first sphere and is in contact with the ceramic heat-conducting sheet. A second contact surface is formed at one end of the first sphere away from the first contact surface. A third contact surface is formed at one end of the second sphere facing the second contact surface and is in contact with the second contact surface.

8. The high-voltage silicon stack according to claim 1, wherein The orthographic projections of the plurality of first-side conductive members on the substrate and the orthographic projections of the plurality of second-side conductive members on the substrate do not have overlapping parts.

9. The high-voltage silicon stack according to claim 1, characterized in that, An encapsulating heat-conducting member is arranged outside the substrate. A first filler and a second filler are filled in the encapsulating heat-conducting member. The sizes of the first filler and the second filler are different. The substrate, the first-side conductive members and the second-side conductive members are all located in the encapsulating heat-conducting member, and the connecting member penetrates through the encapsulating heat-conducting member.

10. The high-voltage silicon stack according to claim 1, characterized in that, Air guiding ribs are arranged on the inner wall of the connecting member, and the air guiding ribs are spirally arranged in the second direction.

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