Perovskite solar cell, preparation method thereof and photovoltaic module

Abstract

The invention relates to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises at least two sub-cell packs which are sequentially connected in series. Each sub-cell pack comprises a substrate, a first electrode layer, a functional layer and a second electrode layer which are sequentially stacked from bottom to top. Scribing areas are arranged on the sub battery packs and comprise a first scribing area, a second scribing area and a third scribing area which are parallel to one another; the second lineation area vertically penetrates through the functional layer, a damage structure is arranged on the surface, exposed out of the second lineation area, of the first electrode layer, and the second lineation area and the damage structure are filled with a second electrode layer. According to the invention, the damaged structure is formed on the surface of the first electrode layer in the second scribing region, so that the residual functional layer material is removed, more accommodating space is provided for the second electrode layer, the contact resistance between the electrodes is reduced, and the battery performance is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a perovskite solar cell, a preparation method thereof, and a photovoltaic module. Background Art

[0002] Organic-inorganic hybrid perovskite solar cells have received extensive attention from academia and industry due to many advantages such as adjustable bandgap and low cost. At present, the record of the highest power conversion efficiency of single-junction perovskite solar cells has developed rapidly, from 3.8% in 2009 to more than 26% now. However, for large-area perovskite modules, their power conversion efficiency is still lower than that of small-area devices, which severely restricts the commercial application of perovskite solar cells.

[0003] In the process of preparing perovskite modules, the laser etching and scribing (P1-P3) process is an important link. Among them, P1 refers to laser etching on conductive glass such as the bottom electrode to form separate sub-cell modules. P2 is to selectively remove functional layers such as perovskite by laser etching and scribing after the deposition of the functional layer, exposing the surface of the bottom electrode such as FTO. The P2 etching and scribing process provides a channel for the connection between the top electrode and the bottom electrode of the module. Finally, after depositing the top electrode, P3 etching and scribing is used to block the charge transfer on the surface of the top electrode, thereby forming separate sub-cells.

[0004] For example, the prior art CN117399801A discloses a laser etching and scribing method for a perovskite solar cell. In this method, a nanosecond infrared laser is first used to mark Mark points for subsequent precise positioning of P2 and P3 in the reserved area of the ITO layer, and then the nanosecond infrared laser is used for scribing in the P1 process. In the P2 process, a vision device is used to capture the position of the Mark point, and after automatic compensation, a picosecond green laser is selected for scribing. In the P3 process, a vision device is used to capture the position of the Mark point, and after automatic compensation, a picosecond green laser is used for scribing. The ultra-high peak power of the picosecond laser can make the material reach the plasma state and be removed at an extremely fast speed, which is a cold processing process. The ultra-narrow pulse width has a small heat-affected zone, improving the scribing quality. The scribing method adopted by this prior art can scribe finer wire grooves, which is beneficial to obtaining a smaller dead zone, improving the battery efficiency, and will not cut the interval part between the wire grooves during scribing, resulting in less damage to the battery.

[0005] However, during the laser scribing process of the solar cell, the P2 process provides a channel for the internal series connection of the top electrode and the bottom electrode, and the residual film layer in the P2 channel affects the contact resistance between the top electrode and the bottom electrode. In addition, the bottom electrode of the perovskite component usually uses conductive metal oxides such as FTO, and its top electrode uses metal electrodes such as Cu and Ag. The contact resistance between the metal and the conductive metal oxide in the two electrodes also affects the charge collection of the component, thereby affecting the performance of the component.

[0006] Therefore, how to reduce the contact resistance between the electrodes in the perovskite solar cell and improve the performance of the perovskite solar cell has become a technical problem to be solved urgently. Summary of the Invention

[0007] To solve the above technical problems, the purpose of the present invention is to provide a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell provided by the present invention forms a damaged structure on the surface of the first electrode layer in the second scribing area. While completely removing the functional layer material in the second scribing area, it provides more accommodation space for the second electrode layer filled in the second scribing area, reduces the contact resistance between the first electrode layer material and the second electrode layer material, and improves the fill factor and photoelectric conversion efficiency of the perovskite solar cell.

[0008] To achieve this purpose, the present invention adopts the following technical solutions:

[0009] In the first aspect, the present invention provides a perovskite solar cell, which includes at least two sub-cell groups connected in series in sequence. The sub-cell group includes a substrate, a first electrode layer, a functional layer and a second electrode layer stacked in sequence from bottom to top;

[0010] A scribing area is provided on the sub-cell group, and the scribing area includes a first scribing area, a second scribing area and a third scribing area that are parallel to each other;

[0011] Taking the direction perpendicular to the surface of the substrate as the vertical direction, the first scribing area vertically penetrates the first electrode layer, and the first scribing area is filled with the functional layer;

[0012] The second scribing area vertically penetrates the functional layer, and a damaged structure is provided on the surface of the first electrode layer exposed in the second scribing area, and the second electrode layer is filled in the second scribing area and the damaged structure;

[0013] The third scribing area vertically penetrates the second electrode layer and the functional layer.

[0014] In the present invention, the third scribed area may partially penetrate or completely penetrate the functional layer, and those skilled in the art can make a choice according to needs.

[0015] In the present invention, the second electrode layer is disposed on the surface of the functional layer away from the first electrode layer, as well as in the second scribed area and the damage structure.

[0016] In the perovskite solar cell provided by the present invention, a damage structure is disposed on the first electrode layer exposed inside the second scribed area. On the one hand, it can completely remove the residual functional layer material in the second scribed area, avoiding the interference of the functional layer material when the first electrode layer and the second electrode layer are in contact. On the other hand, the damage structure forms grooves on the surface of the first electrode layer, which can provide more accommodation space for the second electrode layer filled in the second scribed area, can reduce the contact resistance between the first electrode material in the first electrode layer and the second electrode material in the second electrode layer, and improve the fill factor and photoelectric conversion efficiency of the perovskite solar cell.

[0017] Preferably, taking the direction parallel to the surface of the substrate as the horizontal direction, the first scribed area, the second scribed area, and the third scribed area are spaced apart in the horizontal direction.

[0018] Preferably, taking the direction parallel to the surface of the substrate as the horizontal direction, the width of the first scribed area in the horizontal direction is 20 - 50 μm, such as 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, or 50 μm, etc.

[0019] Preferably, taking the direction parallel to the surface of the substrate as the horizontal direction, the maximum width of the second scribed area in the horizontal direction is 40 - 100 μm, such as 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, or 100 μm, etc.

[0020] Preferably, taking the direction parallel to the surface of the substrate as the horizontal direction, the width of the third scribed area in the horizontal direction is 30 - 80 μm, such as 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, or 80 μm, etc.

[0021] In the present invention, the "maximum width of the second scribed area in the horizontal direction" refers to the width of the second scribed area above the first electrode layer in the vertical direction in the horizontal direction.

[0022] Preferably, with the direction parallel to the surface of the substrate as the horizontal direction, in the horizontal direction, the area of the damaged structure on the surface of the first electrode layer accounts for 10-60% of the area of the exposed surface of the first electrode layer located in the second scribing region, such as 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55% or 60%, etc.

[0023] Preferably, in the vertical direction, the depth of the damaged structure on the surface of the first electrode layer is 1-10% of the total thickness of the first electrode layer, such as 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9% or 10%, etc.

[0024] The present invention regulates the area and depth of the damaged structure on the surface of the first electrode layer inside the second scribing region to ensure that the surface of the first electrode layer in the second scribing region has a damaged structure with appropriate dimensions. On the one hand, it avoids the situation where the area of the damaged structure on the surface of the first electrode layer is too small and the depth is too shallow, resulting in the inability to effectively accommodate the second electrode layer material or even the inability to completely remove the residual functional layer material, thus leading to an excessive contact resistance between the first electrode layer and the second electrode layer. On the other hand, it can avoid the situation where the area of the damaged structure on the surface of the first electrode layer is too large and the depth is too deep, resulting in the formation of an over-damaged structure on the surface of the first electrode layer, thereby affecting the optoelectronic performance of the perovskite solar cell.

[0025] Preferably, the material of the first electrode layer includes any one of FTO (fluorine-doped tin oxide), ITO (indium tin oxide), IZO (indium zinc oxide) or IWO (tungsten indium oxide).

[0026] Preferably, the thickness of the first electrode layer is 100-800 nm, such as 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm or 800 nm, etc.

[0027] Preferably, the material of the second electrode layer includes any one of copper, gold, silver or carbon.

[0028] Preferably, the thickness of the second electrode layer laminated on the surface of the functional layer is 80-150 nm, such as 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm or 150 nm, etc.

[0029] Preferably, the functional layer includes a first carrier transport layer, a perovskite active layer and a second carrier transport layer laminated in sequence from bottom to top.

[0030] The perovskite solar cell provided by the present invention can be a perovskite solar cell with a normal structure or an inverted structure.

[0031] Preferably, the first carrier transport layer in the functional layer is filled in the first scribed area and disposed on the surface of the first electrode layer away from the substrate side.

[0032] Preferably, the first carrier transport layer and the second carrier transport layer have different polarities.

[0033] Preferably, the first carrier transport layer includes any one of a hole transport layer or an electron transport layer.

[0034] Preferably, when the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer.

[0035] Preferably, when the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer.

[0036] Preferably, the thicknesses of the first carrier transport layer and the second carrier transport layer stacked above the surface of the first electrode layer are independently selected from 10 - 200 nm, such as 10 nm, 40 nm, 70 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm or 200 nm, etc.

[0037] In the present invention, the "stacked above the surface of the first electrode layer" not only refers to the layer structure located on the surface of the first electrode layer and in contact with the first electrode layer, but also includes any layer structure stacked above the surface of the first electrode layer on the side away from the substrate in the direction perpendicular to the substrate.

[0038] In the present invention, the thickness of the first carrier transport layer filled in the first scribed area is the thickness of the first electrode layer.

[0039] Preferably, the material of the hole transport layer includes any one of nickel oxide, cuprous oxide, poly(triarylamine), poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid or 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD).

[0040] Preferably, the material of the electron transport layer includes any one of tin oxide, zinc oxide, titanium oxide, molybdenum disulfide, C60, PC 61 BM or PC 71 BM.

[0041] In the present invention, the electron transport layer can be an electron transport layer composed of a single material or a composite electron transport layer formed by laminating two materials. For example, a composite electron transport layer formed by laminating C60 and tin oxide can be selected. Among them, the thickness of C60 is selected to be 8 - 30 nm, such as 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, or 30 nm, etc., and the thickness of tin oxide is selected to be 8 - 15 nm, such as 8 nm, 10 nm, 12 nm, 14 nm, or 15 nm, etc.

[0042] Preferably, the chemical formula of the perovskite active layer is ABX3, where A includes any one or a combination of at least two of methylammonium, formamidinium, Cs, K, or Rb, B includes lead and / or tin, and X includes a halogen element.

[0043] Preferably, the thickness of the perovskite active layer is 300 - 800 nm, such as 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, or 800 nm, etc.

[0044] Preferably, the functional layer further includes a passivation layer.

[0045] The present invention provides a passivation layer in the functional layer of the perovskite solar cell structure to passivate the surface defects of the perovskite thin film.

[0046] Preferably, the passivation layer is located on the surface of the perovskite active layer on the side away from the first electrode layer.

[0047] Preferably, the material of the passivation layer includes any one or a combination of at least two of PEAI (phenethylammonium iodide), EDAI2 (ethylenediamine diiodide), or Al2O3.

[0048] Preferably, the thickness of the passivation layer is 1 - 5 nm, such as 1 nm, 2 nm, 3 nm, 4 nm, or 5 nm, etc.

[0049] In a second aspect, the present invention provides a method for preparing a perovskite solar cell according to the first aspect, and the preparation method includes the following steps:

[0050] (1) A first electrode layer is provided on a substrate, and P1 scribing is performed on the first electrode layer to form a first scribing area penetrating the first electrode layer in a direction perpendicular to the surface of the substrate, obtaining a first component;

[0051] (2) A functional layer is fabricated on the surface of the first electrode layer away from the substrate side and within the first scribing region. P2 scribing is performed on the functional layer to form a second scribing region parallel to the first scribing region and penetrating through the functional layer in a direction perpendicular to the substrate surface, and a damaged structure is formed on the surface of the first electrode layer exposed in the second scribing region, thereby obtaining a second component.

[0052] (3) A second electrode layer is fabricated on the surface of the functional layer away from the first electrode layer side, within the second scribing region, and on the damaged structure. P3 scribing is performed on the second electrode layer and the functional layer to form a third scribing region parallel to the first scribing region and penetrating through the second electrode layer and the functional layer in a direction perpendicular to the substrate surface, thereby forming at least two series-connected sub-battery groups and obtaining the perovskite solar cell.

[0053] The preparation method of the perovskite solar cell structure provided by the present invention uses P1 scribing, P2 scribing, and P3 scribing to divide and connect different regions of the battery, forming a perovskite solar cell structure integrated by series-connected sub-battery groups. Among them, a penetrating second scribing region is formed on the functional layer through P2 scribing. At the same time, a damaged structure is formed on the surface of the first electrode layer exposed inside the second scribing region. On the one hand, it ensures that the residual functional layer material near the first electrode layer side in the second scribing region is completely removed. On the other hand, the damaged structure on the surface of the first electrode layer inside the second scribing region can also provide an accommodation space for fabricating the second electrode layer, reducing the contact resistance between the first electrode material in the first electrode layer and the second electrode material in the second electrode layer, and improving the fill factor and photoelectric conversion efficiency of the obtained perovskite solar cell.

[0054] Preferably, the P2 scribing in step (2) uses a laser scribing method.

[0055] Preferably, in step (2), the power required for scribing to form a second scribing region that completely penetrates the functional layer and does not form a damaged structure on the surface of the first electrode layer is denoted as A0, and the power of the P2 scribing in step (2) is denoted as A1, where A1 satisfies A1 = A0(1 + x), and x is 5 - 10%, such as 5%, 6%, 7%, 8%, 9%, or 10%, etc.

[0056] The present invention increases the power in the P2 scribing, so as to be able to completely remove the residual functional layer material inside the second scribing area, and form a damaged structure on the surface of the first electrode layer inside the second scribing area, so as to reduce the contact resistance of the battery, improve the fill factor and photoelectric conversion efficiency of the battery, further regulate the range of power increase, and avoid that the power of the P2 scribing is too small to form a damaged structure on the first electrode layer, or even unable to completely remove the functional layer material in the second scribing area, resulting in too large contact resistance between the electrode materials in the first electrode layer and the second electrode layer, and the decline of the fill factor and photoelectric conversion efficiency of the battery module. On the other hand, it is to avoid that the power of the P2 scribing is too large, resulting in too serious damage to the first electrode layer, thus affecting the photoelectric performance of the perovskite solar cell.

[0057] Preferably, the A0 is 1-1.5W, such as 1W, 1.1W, 1.2W, 1.3W, 1.4W or 1.5W, etc.

[0058] In the present invention, the selection of the power A0 is adjusted accordingly according to the total thickness of the functional layer, so as to form a second scribing area that completely penetrates the functional layer and no damaged structure is formed on the surface of the first electrode layer.

[0059] Preferably, the P1 scribing in step (1) adopts a laser scribing method.

[0060] Preferably, the power of the P1 scribing in step (1) is 2-4W, such as 2.0W, 2.2W, 2.4W, 2.6W, 2.8W, 3.0W, 3.2W, 3.4W, 3.6W, 3.8W or 4.0W, etc.

[0061] Preferably, the P3 scribing in step (3) adopts a laser scribing method.

[0062] Preferably, the power of the P3 scribing in step (3) is 0.3-1.8W, such as 0.3W, 0.4W, 0.6W, 0.8W, 1.0W, 1.2W, 1.4W, 1.6W or 1.8W, etc.

[0063] In the present invention, the third scribing area obtained after the P3 scribing completely penetrates the second electrode layer. For the penetration of the third scribing area into the functional layer, either complete penetration or partial penetration can be selected, and the power of the P3 scribing can be adjusted according to the situation of complete penetration or partial penetration of the third scribing area into the functional layer.

[0064] Preferably, the functional layer in step (2) includes a first carrier transport layer, a perovskite active layer and a second carrier transport layer which are sequentially stacked from bottom to top.

[0065] Preferably, the first carrier transport layer in the functional layer is disposed to fill the first scribed area and on the surface of the first electrode layer away from the substrate side.

[0066] Preferably, the specific preparation process of the perovskite active layer includes: mixing the raw materials for preparing the perovskite active layer with an organic solvent according to the composition of the perovskite active layer to obtain a perovskite precursor solution, and coating the perovskite precursor solution on the surface of the first carrier ion transport layer away from the first electrode layer, and annealing to obtain the perovskite active layer.

[0067] In the present invention, the types and contents of the organic solvents used in the preparation of the perovskite active layer are not specifically limited, which are related to the specific process. The types and compositions of the organic solvents obtained by those skilled in the art through reasonable means are applicable to the present invention.

[0068] Exemplarily, the organic solvent includes any one or a combination of at least two of 2-methoxyethanol (2-ME), N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP), or dimethyl sulfoxide (DMSO).

[0069] Exemplarily, when the organic solvent includes 2-methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide, the volume ratio of 2-methoxyethanol, N,N-dimethylformamide, and dimethyl sulfoxide can be selected as (7-9):(0.5-1.5):(0.5-1.5), wherein the selection range of 2-methoxyethanol is 7, 7.5, 8, 8.5, or 9, etc.; the selection range of N,N-dimethylformamide is 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, or 1.5, etc.; the selection range of dimethyl sulfoxide is 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, or 1.5, etc.

[0070] Preferably, the concentration of the perovskite precursor solution is 0.5-2M, such as 0.5M, 0.6M, 0.8M, 1.0M, 1.2M, 1.4M, 1.6M, 1.8M, or 2M, etc.

[0071] Preferably, in the process of preparing the perovskite active layer, the coating method includes any one of slot coating method, solution spin coating method, or inkjet printing method.

[0072] Preferably, in the process of preparing the perovskite active layer, the coated component is dried before annealing.

[0073] Preferably, the annealing temperature is 100 - 180 °C, such as 100 °C, 110 °C, 120 °C, 130 °C, 140 °C, 150 °C, 160 °C, 170 °C or 180 °C, etc.

[0074] Preferably, the annealing time is 0.25 - 0.5 h, such as 0.25 h, 0.30 h, 0.35 h, 0.40 h, 0.45 h or 0.50 h, etc.

[0075] Preferably, the manufacturing methods of the first charge carrier transport layer and the second charge carrier transport layer are independently selected from any one of solution spin coating method, blade coating method, slot die coating method, thermal evaporation method, inkjet printing method, chemical vapor deposition method, magnetron sputtering method or atomic layer deposition method.

[0076] Preferably, the functional layer in step (2) further includes a passivation layer on the surface of the perovskite active layer away from the first charge carrier transport layer.

[0077] Preferably, the manufacturing method of the passivation layer includes any one of solution spin coating method, blade coating method, slot die coating method, thermal evaporation method, inkjet printing method, chemical vapor deposition method, magnetron sputtering method or atomic layer deposition method.

[0078] Preferably, the manufacturing method of the second electrode layer in step (3) includes any one of thermal evaporation method or magnetron sputtering method.

[0079] In a third aspect, the present invention provides a photovoltaic module, and the photovoltaic module includes the perovskite solar cell described in the first aspect.

[0080] Compared with the prior art, the present invention has at least the following beneficial effects:

[0081] (1) In the perovskite solar cell provided by the present invention, a damage structure is provided on the first electrode layer exposed inside the second scribing area. On the one hand, it can completely remove the residual functional layer material in the second scribing area, avoiding the interference of the functional layer material when the first electrode layer and the second electrode layer are in contact. On the other hand, the damage structure forms grooves on the surface of the first electrode layer, which can provide more accommodation space for the second electrode layer filled in the second scribing area, can reduce the contact resistance between the first electrode material in the first electrode layer and the second electrode material in the second electrode layer, and improve the fill factor and photoelectric conversion efficiency of the perovskite solar cell.

[0082] (2) The preparation method of the perovskite solar cell structure provided by the present invention uses P1 scribing, P2 scribing, and P3 scribing to divide and connect different regions of the battery, forming a perovskite solar cell structure integrated in series by sub-battery groups. Among them, a completely penetrating second scribing region is formed on the functional layer through P2 scribing. At the same time, a damaged structure is formed on the surface of the first electrode layer exposed inside the second scribing region. On the one hand, it ensures that the residual functional layer material near the first electrode layer side in the second scribing region is completely removed. On the other hand, the damaged structure on the surface of the first electrode layer inside the second scribing region can also provide an accommodation space for fabricating the second electrode layer, reducing the contact resistance between the first electrode material in the first electrode layer and the second electrode material in the second electrode layer, and improving the fill factor and photoelectric conversion efficiency of the obtained perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0083] Figure 1 FIG. 6 is a schematic partial front view structure diagram of the perovskite solar cell provided in Embodiment 1 of the present invention.

[0084] Figure 2 FIG. 10 is a schematic partial front view structure diagram of the perovskite solar cell provided in Embodiment 2 of the present invention.

[0085] Figure 3 FIG. 14 is a schematic partial front view structure diagram of the perovskite solar cell provided in Embodiment 3 of the present invention.

[0086] Figure 4 FIG. 18 is a top view schematic diagram of the damaged structure on the surface of the first electrode layer exposed in the second scribing region provided in Embodiment 1.

[0087] Figure 5 FIG. 22 is a top view schematic diagram of the over-damaged structure on the surface of the first electrode layer exposed in the second scribing region provided in Embodiment 5.

[0088] Figure 6 FIG. 26 is a top view structural schematic diagram of the surface of the first electrode layer exposed in the second scribing region provided in Comparative Example 1.

[0089] Among them, 1, glass substrate; 2, first electrode layer; 3, hole transport layer; 4, perovskite active layer; 5, passivation layer; 6, electron transport layer; 7, second electrode layer; 8, scribing region; 801, first scribing region; 802, second scribing region; 803, third scribing region; 9, damaged structure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0090] The technical solutions of the present invention will be further described below with reference to the drawings and through specific embodiments. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the patent protection of the present invention. The scope of protection of the present invention is subject to the claims.

[0091] Example 1

[0092] This example provides a perovskite solar cell, which is composed of 41 sub-cell groups connected in series in sequence. The sub-cell group includes a glass substrate 1, a first electrode layer 2, a functional layer, and a second electrode layer 7 that are stacked in sequence from bottom to top. The functional layer includes a hole transport layer 3, a perovskite active layer 4, a passivation layer 5, and an electron transport layer 6 that are stacked in sequence from bottom to top. The partial front view structural schematic diagram is as shown in Figure 1 shown

[0093] The single sub-cell group is provided with a scribed area 8, and the scribed area 8 includes a first scribed area 801, a second scribed area 802, and a third scribed area 803 that are parallel to each other; taking the direction parallel to the surface of the glass substrate 1 as the horizontal direction, the first scribed area 801, the second scribed area 802, and the third scribed area 803 are arranged at intervals in the horizontal direction. The width of the first scribed area 801 in the horizontal direction is 30 μm, the maximum width of the second scribed area 802 in the horizontal direction is 60 μm, and the width of the third scribed area 803 in the horizontal direction is 50 μm; taking the direction perpendicular to the surface of the glass substrate 1 as the vertical direction, the first scribed area 801 vertically penetrates the first electrode layer 2 completely, and the first scribed area 801 is filled with the hole transport layer 3. The second scribed area 802 vertically penetrates the functional layer completely, and a damage structure 9 is provided on the surface of the first electrode layer 2 exposed in the second scribed area 802. The second electrode layer 7 is filled in the second scribed area 802 and the damage structure 9. The third scribed area 803 vertically penetrates the second electrode layer 7 completely and partially penetrates the functional layer. In the horizontal direction, the area of the damage structure 9 on the surface of the first electrode layer 2 accounts for 10% of the area of the exposed first electrode layer 2 surface located in the second scribed area 802. In the vertical direction, the average value of the percentage of the depth of the damage structure 9 on the surface of the first electrode layer 2 to the total thickness of the first electrode layer 2 is 5%. The top view schematic diagram of the damage structure 9 on the surface of the first electrode layer 2 exposed in the second scribed area 802 of this example is as shown in Figure 4 shown, and a partial damage structure 9 (the closed area formed by the blue curve) is formed on the surface of the first electrode layer exposed in the second scribed area 802

[0094] The material of the first electrode layer 2 includes an FTO electrode, and the thickness is 500 nm; the material of the hole transport layer 3 includes nickel oxide. The hole transport layer 3 is filled in the first scribed area 801 and is arranged on the surface of the first electrode layer 2 away from the glass substrate 1. The thickness of the hole transport layer 3 stacked above the surface of the first electrode layer 1 is 10 nm; the chemical formula of the perovskite active layer 4 is MA 0.05 Cs 0.05 FA 0.9 Pb(I0.95 Br 0.05 )3, MA is methylamino, FA is formamidinium, and its thickness is 400 nm; the material of the passivation layer 5 includes PEAI and its thickness is 2 nm; the electron transport layer 6 is a composite electron transport layer, including a C60 layer and a tin oxide layer stacked in sequence from bottom to top, and the thickness ratio of the C60 layer to the tin oxide layer is 1:1.5, and the total thickness of the electron transport layer 6 is 30 nm; the material of the second electrode layer 7 includes metallic silver, and the thickness of the second electrode layer 7 stacked on the surface of the electron transport layer 6 away from the perovskite active layer 5 is 100 nm.

[0095] This embodiment provides a preparation method of the above perovskite solar cell, including the following steps:

[0096] S1. Deposit FTO conductive material on the glass substrate 1 to form the first electrode layer 2, and perform P1 scribing on the first electrode layer 2 with a laser of 2.5 W power to form a first scribing area 801 that completely penetrates the first electrode layer 2 along the direction perpendicular to the surface of the glass substrate 1, to obtain a first component.

[0097] S2. Sputter nickel oxide on the surface of the first electrode layer 2 away from the glass substrate 1 in the first component obtained in step (1) and within the first scribing area 801 by magnetron sputtering to obtain the hole transport layer 3.

[0098] Weigh CsI, MABr, FAI, PbI2, and PbBr2 according to the formula amount and dissolve them in an organic solvent. The organic solvent is composed of 2-ME, DMF, and DMSO with a volume ratio of 8:1:1. Prepare a perovskite precursor solution with a concentration of 1 M. Coat the perovskite precursor solution on the surface of the hole transport layer 3 away from the first electrode layer 2 by slot-die coating method, and then anneal at 150 °C for 0.5 h to obtain a perovskite active layer 4 with the chemical formula of MA 0.05 Cs 0.05 FA 0.9 Pb(I 0.95 Br 0.05 )3.

[0099] Coat and prepare PEAI on the surface of the perovskite active layer 4 away from the hole transport layer 3 by slot-die coating method from bottom to top to obtain the passivation layer 5. Prepare C60 by thermal evaporation method and tin oxide by atomic layer deposition method on the side of the passivation layer 5 away from the perovskite active layer 4 to obtain a composite electron transport layer. In summary, a functional layer is prepared.

[0100] S3. On the functional layer obtained in step S2, perform P2 scribing with a laser at a power of 1.2×(1 + 5%) W to form a second scribing area 802 that is parallel to the first scribing area 801 and completely penetrates the functional layer in a direction perpendicular to the surface of the glass substrate 1, and form a damage structure 9 on the surface of the first electrode layer 2 exposed in the second scribing area 802 to obtain a second component.

[0101] S4. On the surface of the electron transport layer 6 away from the glass substrate 1 in the second component obtained in step S2, and on the damage structure 9 on the surfaces of the second scribing area 802 and the first electrode layer 2, deposit silver metal by thermal evaporation to obtain a silver electrode layer as the second electrode layer 7. Then, perform P3 scribing with a laser at a power of 0.6 W on the second electrode layer 7 to form a third scribing area 803 that is parallel to the first scribing area 801 and completely penetrates the second electrode layer 7 and partially penetrates the functional layer in a direction perpendicular to the surface of the glass substrate 1. Obtain a third component, and perform edge cleaning and encapsulation on the third component to obtain a perovskite solar cell.

[0102] Example 2

[0103] This example provides a perovskite solar cell, which is composed of 41 sub - cell groups connected in series in sequence. The sub - cell group includes a glass substrate 1, a first electrode layer 2, a functional layer, and a second electrode layer 7 that are stacked in sequence from bottom to top. The functional layer includes a hole transport layer 3, a perovskite active layer 4, a passivation layer 5, and an electron transport layer 6 that are stacked in sequence from bottom to top. The local front - view structural schematic diagram is as Figure 2 shown.

[0104] The single-section sub-battery pack is provided with a scribed area 8, and the scribed area 8 includes a first scribed area 801, a second scribed area 802, and a third scribed area 803 that are parallel to each other; taking the direction parallel to the surface of the glass substrate 1 as the horizontal direction, the first scribed area 801, the second scribed area 802, and the third scribed area 803 are arranged at intervals in the horizontal direction. The width of the first scribed area 801 in the horizontal direction is 30 μm, the maximum width of the second scribed area 802 in the horizontal direction is 60 μm, and the width of the third scribed area 803 in the horizontal direction is 60 μm; taking the direction perpendicular to the surface of the glass substrate 1 as the vertical direction, the first scribed area 801 vertically penetrates the first electrode layer 2 completely, and the first scribed area 801 is filled with a hole transport layer 3. The second scribed area 802 vertically penetrates the functional layer completely, and a damage structure is provided on the surface of the first electrode layer 2 exposed in the second scribed area 802. The second electrode layer 7 is filled in the second scribed area 802 and the damage structure. The third scribed area 803 vertically penetrates the second electrode layer 7 completely and partially penetrates the functional layer. In the horizontal direction, the area of the damage structure on the surface of the first electrode layer 2 accounts for 58% of the area of the surface of the first electrode layer 2 located in the second scribed area 802. In the vertical direction, the average value of the percentage of the depth of the damage structure on the surface of the first electrode layer 2 to the total thickness of the first electrode layer 2 is 10%.

[0105] The material of the first electrode layer 2 includes ITO electrode material and has a thickness of 500 nm; the material of the hole transport layer 3 includes cuprous oxide. The hole transport layer 3 is filled in the first scribed area 801 and is provided on the surface of the first electrode layer 2 away from the glass substrate 1. The thickness of the hole transport layer 3 laminated above the surface of the first electrode layer 1 is 16 nm; the chemical formula of the perovskite active layer 4 is MA 0.076 Cs 0.05 FA 0.874 Pb(I 0.92 Br 0.08 )3, where MA is methylammonium and FA is formamidinium, and its thickness is 350 nm; the material of the passivation layer 5 includes PEAI and its thickness is 2 nm; the material of the electron transport layer 6 includes PC 71 BM, and its thickness is 20 nm; the material of the second electrode layer 7 includes metallic gold, and the thickness of the second electrode layer 7 laminated on the surface of the electron transport layer 6 away from the perovskite active layer 5 is 150 nm.

[0106] This embodiment provides a preparation method for the above perovskite solar cell, including the following steps:

[0107] S1. Deposit ITO electrode material on the glass substrate 1 to form the first electrode layer 2, and perform P1 scribing on the first electrode layer 2 with a laser of 3W power to form a first scribing area 801 that completely penetrates the first electrode layer 2 in the direction perpendicular to the surface of the glass substrate 1, obtaining the first component.

[0108] S2. On the surface of the first electrode layer 2 in the first component obtained in step (1) on the side away from the glass substrate 1 and within the first scribing area 801, sputter cuprous oxide by magnetron sputtering to obtain the hole transport layer 3.

[0109] Weigh CsI, MABr, FAI, PbI2 and PbBr2 according to the formulation amount and dissolve them in an organic solvent. The organic solvent is composed of 2-ME, DMF and DMSO with a volume ratio of 9:0.5:0.5. Prepare a perovskite precursor solution with a concentration of 2M. Coating the prepared perovskite precursor solution on the surface of the hole transport layer 3 on the side away from the first electrode layer 2 by inkjet printing method, and then annealing at 150 °C for 0.5 h to obtain the perovskite active layer 4 with the chemical formula MA 0.076 Cs 0.05 FA 0.874 Pb(I 0.92 Br 0.08 )3.

[0110] On the surface of the perovskite active layer 4 on the side away from the hole transport layer 3, sequentially coat and prepare PEAI and PC 71 BM by slot-die coating method from bottom to top to obtain the passivation layer 5 and the electron transport layer 6 respectively, and obtain the functional layer.

[0111] S3. Perform P2 scribing on the functional layer obtained in step S2 with a laser of 1.5×(1 + 10%)W power to form a second scribing area 802 that is parallel to the first scribing area 801 and completely penetrates the functional layer in the direction perpendicular to the surface of the glass substrate 1, and form a damage structure on the surface of the first electrode layer 2 exposed in the second scribing area 802, obtaining the second component.

[0112] S4. Evaporate metal gold by thermal evaporation method on the surface of the electron transport layer 6 in the second component obtained in step S2 on the side away from the glass substrate 1, in the second scribing area 802 and on the damage structure on the surface of the first electrode layer 2 to obtain the gold electrode layer as the second electrode layer 7. Then, perform P3 scribing on the second electrode layer 7 with a laser of 1W power to form a third scribing area 803 that is parallel to the first scribing area 801 and completely penetrates the second electrode layer 7 and partially penetrates the functional layer in the direction perpendicular to the surface of the glass substrate 1, obtaining the third component. Trim and encapsulate the third component to obtain the perovskite solar cell.

[0113] Example 3

[0114] This embodiment provides a perovskite solar cell, which is composed of 41 sub-cell groups connected in series. The sub-cell group includes a glass substrate 1, a first electrode layer 2, a functional layer, and a second electrode layer 7 stacked in sequence from bottom to top. The functional layer includes an electron transport layer 6, a perovskite active layer 4, a passivation layer 5, and a hole transport layer 3 stacked in sequence from bottom to top. The partial front view structural schematic diagram is as Figure 3 shown.

[0115] The single sub-cell group is provided with a scribed area 8, and the scribed area 8 includes a first scribed area 801, a second scribed area 802, and a third scribed area 803 that are parallel to each other; taking the direction parallel to the surface of the glass substrate 1 as the horizontal direction, the first scribed area 801, the second scribed area 802, and the third scribed area 803 are spaced apart in the horizontal direction. The width of the first scribed area 801 in the horizontal direction is 30 μm, the maximum width of the second scribed area 802 in the horizontal direction is 60 μm, and the width of the third scribed area 803 in the horizontal direction is 40 μm; taking the direction perpendicular to the surface of the glass substrate 1 as the vertical direction, the first scribed area 801 vertically penetrates the first electrode layer 2 completely, and the first scribed area 801 is filled with the electron transport layer 6. The second scribed area 802 vertically penetrates the functional layer completely, and a damaged structure is provided on the surface of the first electrode layer 2 exposed in the second scribed area 802. The second electrode layer 7 is filled in the second scribed area 802 and the damaged structure. The third scribed area 803 vertically penetrates the second electrode layer 7 completely and partially penetrates the functional layer. In the horizontal direction, the area of the damaged structure on the surface of the first electrode layer 2 accounts for 10% of the area of the surface of the first electrode layer 2 located in the second scribed area 802. In the vertical direction, the average value of the percentage of the depth of the damaged structure on the surface of the first electrode layer 2 to the total thickness of the first electrode layer 2 is 2%.

[0116] The material of the first electrode layer 2 includes an FTO electrode, and the thickness is 600 nm; the material of the electron transport layer 6 includes tin oxide. The electron transport layer 6 is filled in the first scribed area 801 and is provided on the surface of the first electrode layer 2 away from the glass substrate 1. The thickness stacked above the surface of the first electrode layer 1 is 10 nm; the chemical formula of the perovskite active layer 4 is MA 0.05 Cs 0.05 FA 0.9 Pb(I 0.95 Br 0.05)3, MA is methylamino, FA is formamidinium, and its thickness is 300 nm; the material of the passivation layer 5 includes EDAI2, and its thickness is 1 nm; the material of the hole transport layer 3 includes Spiro-OMeTAD, and its thickness is 30 nm; the material of the second electrode layer 7 includes metallic copper, and the thickness of the second electrode layer 7 laminated on the surface of the hole transport layer 3 away from the perovskite active layer 5 is 80 nm.

[0117] This embodiment provides a preparation method of the above perovskite solar cell, including the following steps:

[0118] S1. Deposit FTO conductive material on the glass substrate 1 to form the first electrode layer 2, and perform P1 scribing on the first electrode layer 2 with a laser of 3.5 W power to form a first scribing area 801 that completely penetrates the first electrode layer 2 along the direction perpendicular to the surface of the glass substrate 1, obtaining a first component.

[0119] S2. Deposit tin oxide on the surface of the first electrode layer 2 away from the glass substrate 1 and within the first scribing area 801 of the first component obtained in step (1) by atomic layer deposition to obtain the electron transport layer 6.

[0120] Weigh CsI, MABr, FAI, PbI2, and PbBr2 according to the formulated amounts and dissolve them in an organic solvent. The organic solvent is composed of 2-ME, DMF, and DMSO with a volume ratio of 7:1.5:1.5, and prepare a perovskite precursor solution with a concentration of 0.5 M. Coating the prepared perovskite precursor solution on the surface of the electron transport layer 6 away from the first electrode layer 2 by slot die coating method, and then annealing at 150 °C for 0.5 h to obtain a perovskite active layer 4 with the chemical formula MA 0.05 Cs 0.05 FA 0.9 Pb(I 0.95 Br 0.05 )3.

[0121] Deposit EDAI2 and Spiro-OMeTAD on the surface of the perovskite active layer 4 away from the electron transport layer 6 from bottom to top by slot die coating method respectively to obtain the passivation layer 5 and the hole transport layer 3, and prepare a functional layer.

[0122] S3. Perform P2 scribing on the functional layer obtained in step S2 with a laser of 1×(1 + 5%) W power to form a second scribing area 802 that is parallel to the first scribing area 801 and completely penetrates the functional layer along the direction perpendicular to the surface of the glass substrate 1, and form a damaged structure on the surface of the first electrode layer 2 exposed in the second scribing area 802, obtaining a second component.

[0123] S4. On the surface of the electron transport layer 6 of the second component obtained in step S2, which is away from the side of the glass substrate 1, and on the damaged structure on the surface of the first electrode layer 2, metallic copper is deposited by thermal evaporation to obtain a copper electrode layer as the second electrode layer 7. Then, P3 scribing is performed on the second electrode layer 7 with a laser at a power of 0.3 W to form a third scribing region 803 that is parallel to the first scribing region 801 and completely penetrates the second electrode layer 7 and partially penetrates the functional layer in the direction perpendicular to the surface of the glass substrate 1, obtaining a third component. The third component is trimmed and encapsulated to obtain a perovskite solar cell.

[0124] Example 4

[0125] The difference between this example and Example 1 is only that: in the scribing method of the solar cell in the perovskite solar cell provided in this example, in the horizontal direction, the area of the damaged structure on the surface of the first electrode layer accounts for 50% of the area of the surface of the first electrode layer located in the second scribing region. In the vertical direction, the average value of the percentage of the depth of the damaged structure on the surface of the first electrode layer 2 to the total thickness of the first electrode layer 1 is 6%. Correspondingly, in the preparation method of the perovskite solar cell provided in this example, in step S3, P2 scribing is performed on the functional layer with a laser at a power of 1.2×(1 + 10%) W to obtain a second component. The rest of the content is the same as that in Example 1.

[0126] Example 5

[0127] The difference between this example and Example 1 is only that: in the scribing method of the solar cell in the perovskite solar cell provided in this example, in the horizontal direction, the area of the damaged structure 9 on the surface of the first electrode layer 2 accounts for 80% of the area of the surface of the first electrode layer 2 located in the second scribing region 802. In the vertical direction, the average value of the percentage of the depth of the damaged structure 9 on the surface of the first electrode layer 2 to the total thickness of the first electrode layer 1 is 20%. The top view schematic diagram of the damaged structure 9 on the surface of the first electrode layer 2 exposed in the second scribing region 802 of this example is as Figure 5 shown, and excessive damaged structure 9 (blue shaded area) is formed on the surface of the first electrode layer 2 exposed in the second scribing region 802. Correspondingly, in the preparation method of the perovskite solar cell provided in this example, in step S3, P2 scribing is performed on the functional layer with a laser at a power of 1.2×(1 + 15%) W to obtain a second component. The rest of the content is the same as that in Example 1.

[0128] Example 6

[0129] The difference between this embodiment and Embodiment 1 is only that: in the scribing method of the solar cell in the perovskite solar cell provided in this embodiment, in the horizontal direction, the area of the damaged structure on the surface of the first electrode layer accounts for 1% of the area of the surface of the first electrode layer located in the second scribing region; in the vertical direction, the average value of the percentage of the depth of the damaged structure on the surface of the first electrode layer in the total thickness of the first electrode layer is 1%. Correspondingly, in the preparation method of the perovskite solar cell provided in this embodiment, in step S3, a laser with a power of 1.2×(1 + 2%) W is used to perform P2 scribing on the functional layer to obtain the second component. The rest of the content is the same as that in Embodiment 1.

[0130] Comparative Example 1

[0131] The difference between this comparative example and Embodiment 1 is only that: in the preparation method of the perovskite solar cell provided in this comparative example, in step S3, a laser with a power of 1.2 W is used to perform P2 scribing on the functional layer to obtain the second component, wherein no damaged structure is generated on the surface of the first electrode layer 2 in the second component. A top view schematic diagram of the surface of the first electrode layer 2 exposed in the second scribing region 802 of this comparative example is as Figure 6 shown, and no damaged structure 9 is formed on the surface of the first electrode layer 2 exposed in the second scribing region 802. The rest of the content is the same as that in Embodiment 1.

[0132] Comparative Example 2

[0133] The difference between this comparative example and Embodiment 1 is only that: in the scribing method of the solar cell provided in this comparative example, in step S3, a laser with a power of 1 W is used to perform P2 scribing on the functional layer to obtain the second component, wherein no damaged structure is generated on the surface of the first electrode layer in the second component, and there is still a remaining amount of hole transport layer in the second groove. The rest of the content is the same as that in Embodiment 1.

[0134] Performance tests were carried out on the solar cells obtained in the above-mentioned Embodiments 1-6 and Comparative Examples 1-2. The specific test method includes: at a temperature of 25°C, using a Keithley 2400 source meter to perform performance tests on the solar cells obtained in Embodiments 1-7 and Comparative Examples 1-2 under the condition of AM 1.5G.

[0135] The test results are shown in Table 1.

[0136] Table 1

[0137]

[0138] It can be seen from the test results that:

[0139] (1) It can be seen from Examples 1 to 4 that the perovskite solar cell provided by the present invention forms a damaged structure on the surface of the first electrode layer in the second scribed area. While completely removing the functional layer material in the second scribed area, it provides more accommodation space for the second electrode layer filled in the second scribed area, reduces the contact resistance between the first electrode layer material and the second electrode layer material, and improves the fill factor and photoelectric conversion efficiency of the perovskite solar cell.

[0140] (2) It can be seen from the comparison between Example 1 and Examples 5-6 that if the power of P2 scribing in the present invention is too large, it will cause too serious damage to the first electrode layer, thus affecting the photoelectric performance of the perovskite solar cell; if the power of P2 scribing is too small, it will cause an ineffective damaged structure to be unable to be formed on the first electrode layer, and even unable to completely remove the material of the functional layer, resulting in too large a contact battery between the electrodes in the first electrode layer and the second electrode layer, and the fill factor and photoelectric conversion efficiency of the battery module decrease.

[0141] (3) It can be seen from Example 1 and Comparative Examples 1-2 that if the power of P2 scribing is too small and no damaged structure is generated on the surface of the FTO electrode layer, it will cause too large a contact resistance between the first electrode layer and the second electrode layer, and the fill factor and photoelectric conversion efficiency of the perovskite solar cell will decrease; if the power of P2 scribing is too small, and there is even a remaining amount of hole transport layer in the second trench, it will cause insufficient contact between the second electrode layer and the first electrode layer, and the module efficiency is low.

[0142] In summary, in the perovskite solar cell provided by the present invention, a damaged structure is provided on the first electrode layer exposed inside the second scribed area. On the one hand, it can completely remove the residual functional layer material in the second scribed area and avoid the interference of the functional layer material when the first electrode layer and the second electrode layer are in contact. On the other hand, the damaged structure forms a trench on the surface of the first electrode layer, which can provide more accommodation space for the second electrode layer filled in the second scribed area, can reduce the contact resistance between the first electrode material in the first electrode layer and the second electrode material in the second electrode layer, and improve the fill factor and photoelectric conversion efficiency of the perovskite solar cell.

[0143] The applicant declares that the above description is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that, The perovskite solar cell includes at least two sub-cell groups connected in series, and each sub-cell group includes a substrate, a first electrode layer, a functional layer, and a second electrode layer that are stacked in sequence from bottom to top; A scribed area is provided on the sub-cell group, and the scribed area includes a first scribed area, a second scribed area, and a third scribed area that are parallel to each other; Taking the direction perpendicular to the surface of the substrate as the vertical direction, the first scribed area vertically penetrates the first electrode layer, and the first scribed area is filled with the functional layer; The second scribed area vertically penetrates the functional layer, and a damaged structure is provided on the surface of the first electrode layer exposed in the second scribed area, and the second electrode layer is filled in the second scribed area and the damaged structure; The third scribed area vertically penetrates the second electrode layer and the functional layer.

2. The perovskite solar cell according to claim 1, wherein Taking the direction parallel to the surface of the substrate as the horizontal direction, the first scribed area, the second scribed area, and the third scribed area are arranged at intervals in the horizontal direction; Preferably, taking the direction parallel to the surface of the substrate as the horizontal direction, in the horizontal direction, the area of the damaged structure on the surface of the first electrode layer accounts for 10-60% of the area of the exposed first electrode layer surface located in the second scribed area; Preferably, in the vertical direction, the depth of the damaged structure on the surface of the first electrode layer is 1-10% of the total thickness of the first electrode layer.

3. The perovskite solar cell according to claim 1 or 2, wherein The material of the first electrode layer includes any one of FTO, ITO, IZO, or IWO; Preferably, the thickness of the first electrode layer is 100-800 nm; Preferably, the thickness of the second electrode layer stacked on the surface of the functional layer is 80-150 nm.

4. The perovskite solar cell according to any one of claims 1-3, characterized in that, The functional layer includes a first carrier transport layer, a perovskite active layer, and a second carrier transport layer that are stacked in sequence from bottom to top; Preferably, the first carrier transport layer in the functional layer is filled in the first scribed area and disposed on the surface of the first electrode layer away from the substrate; Preferably, the thicknesses of the first carrier transport layer and the second carrier transport layer stacked above the surface of the first electrode layer are independently selected from 10-200 nm; Preferably, the thickness of the perovskite active layer is 300-800 nm.

5. The perovskite solar cell according to claim 4, characterized in that, A passivation layer is further included in the functional layer; Preferably, the passivation layer is located on the surface of the perovskite active layer away from the first carrier transport layer.

6. A method for preparing a perovskite solar cell according to any one of claims 1-5, characterized in that, The preparation method includes the following steps: (1) A first electrode layer is provided on a substrate, and P1 scribing is performed on the first electrode layer to form a first scribed area that penetrates the first electrode layer in a direction perpendicular to the surface of the substrate, obtaining a first component; (2) A functional layer is fabricated on the surface of the first electrode layer away from the substrate side and within the first scribing region. P2 scribing is performed on the functional layer to form a second scribing region parallel to the first scribing region and penetrating through the functional layer in a direction perpendicular to the substrate surface, and a damage structure is formed on the surface of the first electrode layer exposed in the second scribing region, obtaining a second component; (3) A second electrode layer is fabricated on the surface of the functional layer away from the first electrode layer side, within the second scribing region, and within the damage structure. P3 scribing is performed on the second electrode layer and the functional layer to form a third scribing region parallel to the first scribing region and penetrating through the second electrode layer and the functional layer in a direction perpendicular to the substrate surface, forming at least two series-connected sub-battery groups, obtaining the perovskite solar cell.

7. The preparation method according to claim 6, characterized in that, (2) The P2 scribing in step (2) uses a laser scribing method; Preferably, in step (2), the power required for scribing to form a second scribing region that completely penetrates the functional layer and does not form a damage structure on the surface of the first electrode layer is denoted as A0, and the power of the P2 scribing in step (2) is denoted as A1, where A1 satisfies A1 = A0(1 + x), and x is 5 - 10%; Preferably, A0 is 1 - 1.5 W.

8. The preparation method according to claim 6 or 7, characterized in that, (1) The P1 scribing in step (1) uses a laser scribing method; Preferably, the power of the P1 scribing in step (1) is 2 - 4 W; Preferably, the P3 scribing in step (3) uses a laser scribing method; Preferably, the power of the P3 scribing in step (3) is 0.3 - 1.8 W.

9. The preparation method according to any one of claims 6-8, characterized in that, (2) The functional layer in step (2) includes a first carrier transport layer, a perovskite active layer, and a second carrier transport layer stacked in sequence from bottom to top; Preferably, the first carrier transport layer in the functional layer is disposed to fill the first scribing region and on the surface of the first electrode layer away from the substrate side; Preferably, the functional layer in step (2) further includes a passivation layer on the surface of the perovskite active layer away from the first carrier transport layer side.

10. A photovoltaic module, characterized in that, The photovoltaic module includes the perovskite solar cell according to any one of claims 1 - 5.

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