Equivalent activation energy acquisition method and device, computer device, readable storage medium and program product

Abstract

The application relates to an equivalent activation energy acquisition method and device, computer equipment, a readable storage medium and a program product. The method comprises the following steps: performing stress profile analysis on an electronic device, obtaining target environment parameters corresponding to the electronic device, and constructing a target storage environment according to the target environment parameters; performing long-term storage failure analysis on the electronic device in the target storage environment, obtaining sensitive stresses corresponding to the target storage environment; performing an accelerated storage test on the electronic device based on the sensitive stresses in the target storage environment; obtaining a single activation energy parameter corresponding to the electronic device; obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environment; and acquiring an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments and the stress weights. The method can accurately evaluate the service life of the electronic device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of reliability evaluation, in particular to an equivalent activation energy acquisition method and device, computer equipment, readable storage medium and program product. BACKGROUND

[0002] As a core component of electronic equipment, the performance of core electronic devices directly determines the overall functional characteristics of the equipment. In actual application, electronic equipment often needs to undergo long-term storage to ensure that it can respond quickly and play the expected function at critical moments. However, long-term storage often has an adverse effect on the performance of core electronic devices, causing them to gradually degrade and even lose their service capabilities. Therefore, how to ensure that the core electronic devices after long-term storage still have reliable service capabilities and accurately evaluate their future expected life indicators has become a problem to be solved.

[0003] In the traditional method, the reliability of electronic devices is mainly evaluated by accelerated storage test method. By strengthening the stress conditions such as increasing temperature, the performance degradation process of the device is accelerated, so as to realize the evaluation of the life indicators of the device in a short time.

[0004] However, during the storage period, the environmental stress faced by the core electronic device is not only temperature, but also temperature cycle, humidity and other working conditions. These environmental stresses will also accelerate the degradation process of the device. Therefore, the life indicators of the core electronic device calculated by the high temperature activation energy often cannot accurately evaluate the reliability of the product, resulting in the deviation of the derived life indicators from the actual situation. SUMMARY

[0005] Therefore, it is necessary to provide an equivalent activation energy acquisition method, device, computer equipment, readable storage medium and program product capable of accurately evaluating the life of electronic devices in view of the above technical problems.

[0006] In a first aspect, the present application provides an equivalent activation energy acquisition method, comprising:

[0007] Performing stress profile analysis on the electronic device to obtain target environmental parameters corresponding to the electronic device, and constructing a target storage environment according to the target environmental parameters;

[0008] Performing long-term storage failure analysis on the electronic device in the target storage environment to obtain sensitive stresses corresponding to the target storage environment;

[0009] Performing accelerated storage test on the electronic device based on the sensitive stresses in the target storage environment to obtain single activation energy parameters corresponding to the electronic device;

[0010] obtain the single activation energy parameter of the electronic device.

[0011] In one of the embodiments, the step of obtaining the target environment parameter corresponding to the electronic device by performing stress profile analysis on the electronic device comprises:

[0012] In the storage life cycle of the electronic device, the stress analysis of typical events is performed on the electronic device to obtain event environment parameters corresponding to the typical events, and the event environment is constructed according to the event environment parameters.

[0013] In the event environment, the environmental stress impact analysis is performed on the electronic device to obtain environmental impact parameters corresponding to the event environment.

[0014] The storage stress spectrum is obtained according to the environmental stress data and the environmental impact parameters corresponding to all the event environments, and the target environment parameter corresponding to the electronic device is obtained according to the storage stress spectrum.

[0015] In one of the embodiments, the step of obtaining the sensitive stress corresponding to the target storage environment by performing long-term storage failure analysis on the electronic device comprises:

[0016] The storage failure mode and failure mechanism analysis is performed on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress.

[0017] The sensitive stress corresponding to the target storage environment is obtained according to the corresponding relationship.

[0018] In one of the embodiments, the step of obtaining the single activation energy parameter corresponding to the electronic device by performing accelerated storage test on the electronic device based on the sensitive stress comprises:

[0019] The accelerated storage test is performed on the electronic device under the stress condition corresponding to the sensitive stress, and the performance sensitive parameter corresponding to the electronic device is determined according to the test result.

[0020] The performance degradation model of the electronic device is obtained according to the performance sensitive parameter, the failure analysis is performed on the performance degradation model, and the single activation energy parameter corresponding to the electronic device is obtained.

[0021] In one of the embodiments, the step of obtaining the failure acceleration coefficient and the stress weight corresponding to the target storage environment comprises:

[0022] The failure acceleration coefficient corresponding to the target storage environment is obtained according to the device characteristics and the performance sensitive parameter of the electronic device.

[0023] The stress weight corresponding to the target storage environment is obtained according to the storage stress spectrum.

[0024] In one embodiment, the step of obtaining the equivalent activation energy of the electronic device based on a single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and stress weights includes:

[0025] The weighted acceleration factor of the electronic device is obtained based on the failure acceleration factor and stress weight corresponding to all target storage environments.

[0026] The equivalent activation energy of an electronic device is obtained based on a single activation energy parameter and a weighted acceleration coefficient.

[0027] Secondly, this application also provides an equivalent activation energy acquisition device, comprising:

[0028] The stress analysis module is used to perform stress profile analysis on electronic devices, obtain the target environmental parameters corresponding to the electronic devices, and construct the target storage environment based on the target environmental parameters.

[0029] The failure analysis module is used to perform long-term storage failure analysis on electronic devices in the target storage environment and obtain the sensitive stress corresponding to the target storage environment.

[0030] The storage test module is used to conduct accelerated storage tests on electronic devices based on sensitive stress under target storage environment to obtain the single activation energy parameter of the electronic device.

[0031] The activation energy acquisition module is used to acquire the failure acceleration factor and stress weight corresponding to the target storage environment. Based on the single activation energy parameter and the failure acceleration factor and stress weight corresponding to all target storage environments, the equivalent activation energy of the electronic device is acquired.

[0032] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the method steps of any one of the first aspects.

[0033] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the method steps of any one of the first aspects.

[0034] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, implements the method steps of any one of the first aspects.

[0035] The equivalent activation energy obtaining method, device, computer device, readable storage medium and program product can determine the target environmental parameter that has an influence on the service life of the electronic device by stress profile analysis on the electronic device, perform failure analysis on the electronic device in a target storage environment constructed according to the target environmental parameter to obtain a sensitive stress causing failure of the electronic device, and then perform an accelerated storage test based on the sensitive stress, so that the failure process of the electronic device can be effectively simulated, the single activation energy parameter can be accurately obtained, and the equivalent activation energy of the electronic device can be accurately obtained, thereby improving the accuracy of service life evaluation of the electronic device. BRIEF DESCRIPTION OF DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the description of the embodiments of the present application or the related art will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other related drawings can be obtained by those skilled in the art without creative labor.

[0037] Figure 1 A flowchart of an equivalent activation energy obtaining method in an embodiment;

[0038] Figure 2 A flowchart of a stress profile analysis step in an embodiment;

[0039] Figure 3 A flowchart of a long-term storage failure analysis step in an embodiment;

[0040] Figure 4 A flowchart of a single activation energy parameter obtaining step in an embodiment;

[0041] Figure 5 A flowchart of an equivalent activation energy obtaining step in an embodiment;

[0042] Figure 6 A flowchart of an equivalent activation energy obtaining method in another embodiment;

[0043] Figure 7 A structural block diagram of an equivalent activation energy obtaining device in an embodiment;

[0044] Figure 8 An internal structure diagram of a computer device in an embodiment. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application.

[0046] In an exemplary embodiment, as shown in Figure 1 An equivalent activation energy acquisition method is provided, which is applied to the core electronic device as an example for illustration, and includes the following steps 102 to 108. Among them:

[0047] S102: Stress profile analysis is performed on the electronic device to obtain the target environmental parameters corresponding to the electronic device, and a target storage environment is constructed according to the target environmental parameters.

[0048] Optionally, the electronic device will be subjected to various stresses in actual use, such as temperature, humidity, vibration, and electrical stress. Stress profile analysis refers to detailed measurement, recording and analysis of the stresses borne by the electronic device under various possible working and storage conditions, determination of the variation law and characteristics of these stresses, and determination of the key stress factors that have a greater impact on the performance and life of the electronic device through stress profile analysis. Among them, the target environmental parameters refer to the specific storage conditions of the electronic device. According to the obtained target environmental parameters, an environment similar to these storage conditions can be simulated in a specific test environment in order to perform subsequent testing and analysis on the electronic device.

[0049] S104: Long-term storage failure analysis is performed on the electronic device in the target storage environment to obtain the sensitive stress corresponding to the target storage environment.

[0050] Optionally, by analyzing the failure mode and failure mechanism of the electronic device in the target storage environment, the failure mechanism of the electronic device can be obtained, and then by analyzing the sensitive stress of the failure mechanism, the mapping relationship between the failure mechanism and the sensitive stress is determined, so as to obtain the stress factor that has a greater impact on the failure of the electronic device, i.e. the sensitive stress.

[0051] S106: Based on the sensitive stress, an accelerated storage test is performed on the electronic device in the target storage environment to obtain the single activation energy parameter corresponding to the electronic device.

[0052] Optionally, in the target storage environment, the sensitive stress is taken as the main control factor, the failure process of the electronic device is accelerated, and the failure data that will occur after a long time under normal use conditions of the electronic device is obtained. In the process of accelerated storage test, by analyzing and processing the failure data of the electronic device, the single activation energy parameter of the electronic device under a specific sensitive stress is calculated by using relevant physical models and mathematical methods, wherein the activation energy reflects the difficulty of changes in the internal microstructure of the electronic device or chemical reactions, and is closely related to the life of the electronic device.

[0053] S108: Obtain the failure acceleration coefficient and stress weight corresponding to the target storage environment, and obtain the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0054] Optionally, the failure acceleration coefficient corresponding to each target storage environment is determined according to the characteristics of the target storage environment and the result of the accelerated storage test, wherein the failure acceleration coefficient represents the acceleration multiple of the failure speed of the electronic device in the environment relative to the normal use condition, and the weight of each stress is determined according to the influence degree of the sensitive stress on the failure of the electronic device.

[0055] Further, the equivalent activation energy of the electronic device is calculated by comprehensively considering the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights, by using a specific calculation formula and model, wherein the equivalent activation energy comprehensively considers the influence of various stress factors and different storage environments on the service life of the electronic device, and more comprehensively reflects the service life characteristics of the electronic device in actual use.

[0056] In the above-mentioned equivalent activation energy obtaining method, the target environment parameters that have an influence on the service life of the electronic device can be determined by performing stress profile analysis on the electronic device, the sensitive stress causing the failure of the electronic device can be obtained by performing failure analysis on the electronic device in the target storage environment constructed according to the target environment parameters, and then the accelerated storage test is performed based on the sensitive stress, which can effectively simulate the failure process of the electronic device, accurately obtain the single activation energy parameter, and then accurately obtain the equivalent activation energy of the electronic device, thereby improving the accuracy of the service life evaluation of the electronic device.

[0057] In an exemplary embodiment, the step of performing stress profile analysis on the electronic device to obtain the target environment parameters corresponding to the electronic device includes: performing stress analysis on the electronic device for typical events in the storage service life of the electronic device to obtain event environment parameters corresponding to the typical events, and constructing event environments according to the event environment parameters; performing environmental stress influence analysis on the electronic device in the event environments to obtain environmental influence parameters corresponding to the event environments; obtaining a storage stress spectrum according to the environmental stress data and the environmental influence parameters corresponding to all event environments, and obtaining the target environment parameters corresponding to the electronic device according to the storage stress spectrum.

[0058] Optionally, the electronic device can experience various typical events in its storage life cycle, such as central warehouse storage, life extension repair, mission launch, etc. By stress analysis of these typical events, various stresses, such as temperature, humidity, temperature change, etc. to which the electronic device is subjected to in each typical event can be determined, and the event environmental parameters corresponding to each typical event can be obtained. According to the obtained event environmental parameters, the environmental conditions corresponding to the typical events can be simulated, so as to further analyze and test the electronic device in a controllable manner.

[0059] For example, as shown in FIG. 1, by carrying out stress analysis of typical events and stresses in the storage life cycle, the typical events and environments in storage use are determined. In the stress analysis process, by storage environmental stress impact analysis, the natural environmental stress comprehensive influence of temperature, humidity, temperature change, etc. is extracted in combination with the storage use environmental stress measured data, and the storage environmental stress is quantitatively processed, so as to comprehensively realize the storage environmental stress profile analysis of the core electronic device, and finally determine the typical storage environment of the electronic device, such as high-temperature storage environment, temperature cycle storage environment, and humid heat storage environment, etc. Figure 2 In this embodiment, by stress analysis of various typical events in the storage life cycle of the electronic device, various situations that the electronic device can encounter in actual use can be covered, which is closer to the real use environment, thereby improving the reliability and practicability of the evaluation result.

[0060] In one exemplary embodiment, the step of obtaining the sensitive stress corresponding to the target storage environment by long-term storage failure analysis of the electronic device includes: performing storage failure mode and failure mechanism analysis on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress; and obtaining the sensitive stress corresponding to the target storage environment according to the corresponding relationship.

[0061] Optionally, the electronic device can experience various typical events in its storage life cycle, such as central warehouse storage, life extension repair, mission launch, etc. By stress analysis of these typical events, various stresses, such as temperature, humidity, temperature change, etc. to which the electronic device is subjected to in each typical event can be determined, and the event environmental parameters corresponding to each typical event can be obtained. According to the obtained event environmental parameters, the environmental conditions corresponding to the typical events can be simulated, so as to further analyze and test the electronic device in a controllable manner.

[0062] For example, as shown in FIG. 1, by carrying out stress analysis of typical events and stresses in the storage life cycle, the typical events and environments in storage use are determined. In the stress analysis process, by storage environmental stress impact analysis, the natural environmental stress comprehensive influence of temperature, humidity, temperature change, etc. is extracted in combination with the storage use environmental stress measured data, and the storage environmental stress is quantitatively processed, so as to comprehensively realize the storage environmental stress profile analysis of the core electronic device, and finally determine the typical storage environment of the electronic device, such as high-temperature storage environment, temperature cycle storage environment, and humid heat storage environment, etc.

[0063] Figure 3 ​As shown, by analyzing product characteristics and device selection, combined with the existing equipment component list, from the dimensions of packaging form, packaging material, manufacturer, etc. Comprehensive consideration selects typical products as the research object, and improves the coverage of the research conclusion. For the selected typical products, through the analysis of storage failure mode and failure mechanism, for example, the possible failure modes of operational amplifier include sealing failure, adhesive degradation, tube corrosion, and chip micro-corrosion defects, etc. The possible failure modes of memory include sealing failure, wire bonding failure, and data loss, etc. The possible failure modes of microwave devices include sealing failure, chip bonding failure, and tube corrosion failure, etc. Finally, through the analysis of failure sensitive stress, the mapping relationship between the main failure mechanism and the temperature sensitive stress, temperature change sensitive stress, and hygrothermal sensitive stress is determined.

[0064] In this embodiment, by analyzing the failure mode and mechanism, the sensitive stress which plays a key role in the failure of electronic devices can be accurately found out, so as to accurately evaluate the service life of electronic devices according to the influence degree of sensitive stress on the service life of electronic devices.

[0065] In one exemplary embodiment, the step of obtaining the single activation energy parameter corresponding to the electronic device based on the sensitive stress includes: performing an accelerated storage test on the electronic device under the stress condition corresponding to the sensitive stress, and determining the performance sensitive parameter corresponding to the electronic device according to the test result; obtaining the performance degradation model of the electronic device according to the performance sensitive parameter, and performing failure analysis on the performance degradation model to obtain the single activation energy parameter corresponding to the electronic device.

[0066] Optionally, under the specific stress condition corresponding to the sensitive stress, an accelerated storage test is carried out on the electronic device to speed up the process of internal physical or chemical changes of the electronic device, so as to simulate the state after long-term storage or use in a short time. During the accelerated storage test, various performance indicators of the electronic device are monitored and recorded in real time, and through the analysis of the test results, the parameter most sensitive to the performance change of the electronic device, i.e. the performance sensitive parameter, is determined.

[0067] Further, according to the determined performance sensitive parameter, a performance degradation model of the electronic device is established, wherein the performance degradation model describes the law of change of the performance sensitive parameter with time or test condition. By deeply analyzing the established performance degradation model, the critical value of the performance sensitive parameter when the electronic device reaches the failure state is determined, and combined with the related physical theory and chemical reaction kinetics knowledge, the single activation energy parameter corresponding to the electronic device is calculated through the analysis of the performance degradation process, wherein the activation energy reflects the energy barrier to be overcome for the internal changes of the electronic device, and the single activation energy parameter is a quantitative description of the energy barrier under the condition of a certain sensitive stress.

[0068] As an example, Figure 4 As shown in the figure, by carrying out a single failure mechanism accelerated storage test design, completing the determination of the device limit stress condition, determining the test sample quantity, test grouping and stress level, determining the test device and test condition requirements, proposing parameter monitoring requirements and failure criteria, and providing clear input for the activation energy acquisition test, in the process of carrying out the accelerated storage test, the tested device is installed and the equipment is preheated, the initial state of the device before the test is confirmed to ensure that it meets the test requirements, and the test data is accurately and completely recorded. Finally, according to the recorded data, the test data modeling is carried out, the performance sensitive parameters of the accelerated test are determined by sorting out the test original records, the performance degradation model under different stress conditions is constructed, and the activation energy parameter extraction is completed based on the failure physical model.

[0069] In this embodiment, by carrying out the accelerated storage test on the electronic device, the performance change of the electronic device under long-term normal use or storage can be simulated in a short time, thereby improving the efficiency of the electronic device life evaluation.

[0070] In one exemplary embodiment, the step of obtaining the failure acceleration coefficient and the stress weight corresponding to the target storage environment includes: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and the performance sensitive parameters of the electronic device; and obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0071] Optionally, the characteristics of the electronic device will affect its reliability and failure behavior in different environments, and the performance sensitive parameters refer to the key parameters determined in the accelerated storage test that can reflect the performance change of the electronic device. These parameters are closely related to the failure process of the device, and by analyzing the change of the performance sensitive parameters under different stress conditions, the failure rate of the device can be understood. By comprehensively considering the device characteristics and the performance sensitive parameters of the electronic device, the failure acceleration coefficient corresponding to the target storage environment can be calculated, wherein the failure acceleration coefficient represents the acceleration multiple of the failure speed of the electronic device under the target storage environment relative to the normal or standard environment.

[0072] Optionally, the storage stress spectrum is a comprehensive description of various stresses faced by the electronic device during the storage life cycle, and by analyzing the storage stress spectrum, the frequency, intensity and potential impact of different stress factors on the electronic device failure in the target storage environment can be determined. According to the information obtained by analyzing the storage stress spectrum, a weight value is assigned to each stress factor, and the stress weight reflects the relative importance of the stress factor to the failure of the electronic device in the target storage environment.

[0073] In the embodiment, the failure acceleration coefficient and the stress weight of the target storage environment are obtained, the influence of different target storage environments on the failure speed of the electronic device is quantified, the relative importance of different stress factors in the failure process is highlighted, and the accuracy of the life evaluation is improved.

[0074] In an exemplary embodiment, according to the single activation energy parameter, the failure acceleration coefficients and the stress weights corresponding to all target storage environments, the step of obtaining the equivalent activation energy of the electronic device comprises: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and the stress weights corresponding to all target storage environments; and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0075] Optionally, the influence of different target storage environments on the failure speed of the electronic device is different, the failure acceleration coefficient reflects the acceleration multiple of the failure speed of the electronic device in a specific target storage environment compared with the normal environment, and the stress weight reflects the relative importance of stress factors in each target storage environment on the failure of the electronic device. By comprehensively considering the failure acceleration coefficients and the stress weights corresponding to all target storage environments, the weighted acceleration coefficient of the electronic device is calculated by weighted average.

[0076] Optionally, the single activation energy parameter is a quantitative value of the energy barrier to be overcome for the internal change of the electronic device under a specific sensitive stress condition, and the weighted acceleration coefficient reflects the comprehensive failure acceleration of the electronic device in all target storage environments. The equivalent activation energy of the electronic device is calculated by combining the single activation energy parameter and the weighted acceleration coefficient. The equivalent activation energy comprehensively considers different target storage environments and sensitive stresses, and is a parameter that more comprehensively reflects the energy characteristics of the internal micro changes of the electronic device under actual complex storage environments.

[0077] As shown in FIG. 1, the equivalent activation energy of the electronic device is obtained by analyzing the contribution rate of the environmental stress acceleration coefficient during the storage period of the electronic device, comprehensively considering the intrinsic characteristics and storage sensitive characteristics of the device material process structure, determining the contribution rate distribution method, determining the contribution rate of different environmental stress acceleration coefficients, analyzing the stress weight of the storage profile, extracting the typical storage environment stress spectrum, carrying out the storage event influence analysis, establishing the stress weight distribution method, determining the weight of different stress factors, and constructing the equivalent activation energy of the electronic device. Figure 5 As shown in FIG. 1, the equivalent activation energy of the electronic device is obtained by analyzing the contribution rate of the environmental stress acceleration coefficient during the storage period of the electronic device, comprehensively considering the intrinsic characteristics and storage sensitive characteristics of the device material process structure, determining the contribution rate distribution method, determining the contribution rate of different environmental stress acceleration coefficients, analyzing the stress weight of the storage profile, extracting the typical storage environment stress spectrum, carrying out the storage event influence analysis, establishing the stress weight distribution method, determining the weight of different stress factors, and constructing the equivalent activation energy of the electronic device.

[0078] As an example, the storage stress weight of the high-temperature storage environment is assumed to be , and the acceleration coefficient is ; the temperature cycle storage environment storage stress weight is , the acceleration coefficient is ; the damp heat storage environment storage stress weight is , the acceleration coefficient is .

[0079] Then, the weighted acceleration coefficient is:

[0080]

[0081] Further, the equivalent activation energy is:

[0082]

[0083] Wherein, T0 is the reference temperature under the target storage environment, and T1 is the absolute temperature set in the acceleration test.

[0084] In the embodiment, by comprehensively calculating the failure acceleration coefficient and the stress weight corresponding to all target storage environments, the life-related characteristics of the electronic device under various possible storage environments can be more comprehensively reflected, so that the evaluation result is closer to the actual use, and the comprehensiveness and authenticity of the electronic device life evaluation are improved.

[0085] In an exemplary embodiment, as shown in Figure 6 , an equivalent activation energy acquisition method is provided, which comprises the following steps:

[0086] S602: In the storage life cycle of the electronic device, stress analysis of typical events is performed on the electronic device, event environment parameters corresponding to the typical events are obtained, and the event environment is constructed according to the event environment parameters; environmental stress influence analysis is performed on the electronic device under the event environment, and environmental influence parameters corresponding to the event environment are obtained; the storage stress spectrum is obtained according to the environmental stress data and the environmental influence parameters corresponding to all event environments, the target environment parameters corresponding to the electronic device are obtained according to the storage stress spectrum, and the target storage environment is constructed according to the target environment parameters.

[0087] S604: In the target storage environment, storage failure mode and failure mechanism analysis is performed on the electronic device, and the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress is obtained; the sensitive stress corresponding to the target storage environment is obtained according to the corresponding relationship.

[0088] S606: In the target storage environment, the electronic device is subjected to an acceleration storage test under the stress condition corresponding to the sensitive stress, and the performance sensitive parameter corresponding to the electronic device is determined according to the test result; the performance degradation model of the electronic device is obtained according to the performance sensitive parameter, the failure analysis of the performance degradation model is performed, and the single activation energy parameter corresponding to the electronic device is obtained.

[0089] S608: Obtain the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and performance sensitive parameters of the electronic device; and obtain the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0090] S610: Obtain the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; and obtain the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0091] In this embodiment, the target environment parameters that have an impact on the service life of the electronic device can be determined through stress profile analysis of the electronic device. The sensitive stress causing the failure of the electronic device can be obtained by performing failure analysis on the electronic device in the target storage environment constructed according to the target environment parameters. Then, the failure process of the electronic device can be effectively simulated through accelerated storage test based on the sensitive stress, the single activation energy parameter can be accurately obtained, and the equivalent activation energy of the electronic device can be accurately obtained, thereby improving the accuracy of the service life evaluation of the electronic device.

[0092] It should be understood that, although each step in the flowchart involved in the above embodiments is displayed in sequence according to the arrow, these steps are not necessarily executed in sequence according to the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and these steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in the above embodiments can include multiple steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of these steps or stages is not necessarily sequential, but can be executed in rotation or alternation with at least part of other steps or steps or stages in other steps.

[0093] Based on the same inventive concept, the embodiments of the present application also provide an equivalent activation energy acquisition device for implementing the above-mentioned equivalent activation energy acquisition method. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme described in the above method, so the specific limitations in one or more equivalent activation energy acquisition device embodiments provided below can refer to the limitations of the equivalent activation energy acquisition method in the above text, which will not be repeated here.

[0094] In one exemplary embodiment, as shown in Figure 7 An equivalent activation energy acquisition device is provided, which includes a stress analysis module 10, a failure analysis module 20, a storage test module 30, and an activation energy acquisition module 40, wherein:

[0095] The stress analysis module 10 is configured to perform stress profile analysis on the electronic device to obtain target environmental parameters corresponding to the electronic device, and to construct a target storage environment according to the target environmental parameters.

[0096] The failure analysis module 20 is configured to perform long-term storage failure analysis on the electronic device in the target storage environment to obtain sensitive stresses corresponding to the target storage environment.

[0097] The storage test module 30 is configured to perform accelerated storage tests on the electronic device based on the sensitive stresses in the target storage environment to obtain a single activation energy parameter corresponding to the electronic device.

[0098] The activation energy acquisition module 40 is configured to acquire failure acceleration coefficients and stress weights corresponding to the target storage environment, and to acquire an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all the target storage environments, and the stress weights.

[0099] In an exemplary embodiment, the stress analysis module 10 is further configured to perform stress analysis on the electronic device for typical events in a storage life cycle of the electronic device to obtain event environmental parameters corresponding to the typical events, and to construct event environments according to the event environmental parameters; to perform environmental stress influence analysis on the electronic device in the event environments to obtain environmental influence parameters corresponding to the event environments; to acquire a storage stress spectrum according to the environmental stress data corresponding to all the event environments and the environmental influence parameters, and to acquire the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0100] In an exemplary embodiment, the failure analysis module 20 is further configured to perform storage failure mode and failure mechanism analysis on the electronic device to obtain a corresponding relationship between a target failure mechanism of the electronic device and environmental stresses; and to acquire the sensitive stresses corresponding to the target storage environment according to the corresponding relationship.

[0101] In an exemplary embodiment, the storage test module 30 is further configured to perform accelerated storage tests on the electronic device under stress conditions corresponding to the sensitive stresses, and to determine performance sensitive parameters corresponding to the electronic device according to test results; to acquire a performance degradation model of the electronic device according to the performance sensitive parameters, to perform failure analysis on the performance degradation model, and to acquire the single activation energy parameter corresponding to the electronic device.

[0102] In an exemplary embodiment, the activation energy acquisition module 40 is further configured to acquire the failure acceleration coefficients corresponding to the target storage environment according to device characteristics and the performance sensitive parameters of the electronic device; and to acquire the stress weights corresponding to the target storage environment according to the storage stress spectrum.

[0103] In an example embodiment, the activation energy acquisition module 40 is further configured to acquire a weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients and stress weights corresponding to all target storage environments; and acquire an equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0104] The modules in the equivalent activation energy acquisition apparatus can be implemented by software, hardware or a combination thereof. The modules can be embedded in or independent of a processor in a computer device in hardware form, or stored in a memory in the computer device in software form, so as to be called and executed by the processor to perform the operations corresponding to the modules.

[0105] In an example embodiment, a computer device is provided, which can be a terminal, and an internal structure diagram of the computer device can be as shown in Figure 8 The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for running of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is configured to exchange information between the processor and external devices. The communication interface of the computer device is configured to perform wired or wireless communication with external terminals, and the wireless communication can be achieved through WIFI, mobile cellular network, near field communication (NFC) or other technologies. The computer program is executed by the processor to implement an equivalent activation energy acquisition method. The display unit of the computer device is configured to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer overlaid on the display screen, or a key, a trackball or a touchpad arranged on the shell of the computer device, or an external keyboard, a touchpad or a mouse, etc.

[0106] Those skilled in the art can understand that Figure 8 The structure shown in the above description is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0107] In one example embodiment, a computer device is provided, comprising a memory and a processor, the memory storing a computer program, and the processor implementing the following steps when executing the computer program: performing stress profile analysis on an electronic device, obtaining target environmental parameters corresponding to the electronic device, and constructing target storage environments according to the target environmental parameters; performing long-term storage failure analysis on the electronic device in the target storage environments, and obtaining sensitive stresses corresponding to the target storage environments; performing accelerated storage tests on the electronic device based on the sensitive stresses in the target storage environments, and obtaining a single activation energy parameter corresponding to the electronic device; obtaining failure acceleration coefficients and stress weights corresponding to the target storage environments, and obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all the target storage environments, and the stress weights.

[0108] In one embodiment, the stress profile analysis on the electronic device, the obtaining of the target environmental parameters corresponding to the electronic device, and the constructing of the target storage environments according to the target environmental parameters involve the following steps: performing stress analysis on the electronic device for typical events in a storage life cycle of the electronic device, obtaining event environmental parameters corresponding to the typical events, and constructing event environments according to the event environmental parameters; performing environmental stress influence analysis on the electronic device in the event environments, and obtaining environmental influence parameters corresponding to the event environments; obtaining a storage stress spectrum according to the environmental stress data and the environmental influence parameters corresponding to all the event environments, and obtaining the target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

[0109] In one embodiment, the long-term storage failure analysis on the electronic device, and the obtaining of the sensitive stresses corresponding to the target storage environments involve the following steps: performing storage failure mode and failure mechanism analysis on the electronic device, obtaining a corresponding relationship between a target failure mechanism of the electronic device and environmental stresses, and obtaining the sensitive stresses corresponding to the target storage environments according to the corresponding relationship.

[0110] In one embodiment, the accelerated storage tests on the electronic device based on the sensitive stresses, and the obtaining of the single activation energy parameter corresponding to the electronic device involve the following steps: performing accelerated storage tests on the electronic device under stress conditions corresponding to the sensitive stresses, and determining performance sensitive parameters corresponding to the electronic device according to test results; obtaining a performance degradation model of the electronic device according to the performance sensitive parameters, performing failure analysis on the performance degradation model, and obtaining the single activation energy parameter corresponding to the electronic device.

[0111] In one embodiment, the obtaining of the failure acceleration coefficients and the stress weights corresponding to the target storage environments involves the following steps: obtaining the failure acceleration coefficients corresponding to the target storage environments according to device characteristics and performance sensitive parameters of the electronic device; and obtaining the stress weights corresponding to the target storage environments according to the storage stress spectrum.

[0112] In one embodiment, the processor, when executing the computer program, involves obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights, including: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficients corresponding to all target storage environments and the stress weights; and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0113] In one embodiment, a computer readable storage medium is provided, and the computer readable storage medium stores a computer program. When the computer program is executed by a processor, the following steps are implemented: performing stress profile analysis on an electronic device to obtain target environment parameters corresponding to the electronic device, and constructing target storage environments according to the target environment parameters; performing long-term storage failure analysis on the electronic device in the target storage environments to obtain sensitive stresses corresponding to the target storage environments; performing accelerated storage tests on the electronic device based on the sensitive stresses in the target storage environments to obtain a single activation energy parameter corresponding to the electronic device; obtaining failure acceleration coefficients corresponding to the target storage environments and stress weights, and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients corresponding to all target storage environments, and the stress weights.

[0114] In one embodiment, the processor, when executing the computer program, involves performing stress profile analysis on an electronic device to obtain target environment parameters corresponding to the electronic device, including: performing stress analysis on the electronic device for typical events in the storage life cycle of the electronic device to obtain event environment parameters corresponding to the typical events, and constructing event environments according to the event environment parameters; performing environmental stress influence analysis on the electronic device in the event environments to obtain environmental influence parameters corresponding to the event environments; obtaining a storage stress spectrum according to the environmental stress data corresponding to all event environments and the environmental influence parameters, and obtaining the target environment parameters corresponding to the electronic device according to the storage stress spectrum.

[0115] In one embodiment, the processor, when executing the computer program, involves performing long-term storage failure analysis on an electronic device to obtain sensitive stresses corresponding to target storage environments, including: performing storage failure mode and failure mechanism analysis on the electronic device to obtain a corresponding relationship between the target failure mechanisms of the electronic device and environmental stresses; and obtaining the sensitive stresses corresponding to the target storage environments according to the corresponding relationship.

[0116] In one embodiment, the computer program is executed by the processor to involve obtaining a single activation energy parameter corresponding to the electronic device based on an accelerated storage test of the electronic device under a sensitive stress, comprising: performing the accelerated storage test of the electronic device under a stress condition corresponding to the sensitive stress, and determining a performance sensitive parameter corresponding to the electronic device according to a test result; obtaining a performance degradation model of the electronic device according to the performance sensitive parameter, performing failure analysis on the performance degradation model, and obtaining the single activation energy parameter corresponding to the electronic device.

[0117] In one embodiment, the computer program is executed by the processor to involve obtaining a failure acceleration coefficient and a stress weight corresponding to a target storage environment, comprising: obtaining the failure acceleration coefficient corresponding to the target storage environment according to a device characteristic and a performance sensitive parameter of the electronic device; and obtaining the stress weight corresponding to the target storage environment according to a storage stress spectrum.

[0118] In one embodiment, the computer program is executed by the processor to involve obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficient and the stress weight corresponding to all target storage environments, comprising: obtaining a weighted acceleration coefficient of the electronic device according to the failure acceleration coefficient and the stress weight corresponding to all target storage environments; and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0119] In one embodiment, a computer program product is provided, comprising a computer program which, when executed by a processor, implements the following steps: performing stress profile analysis on an electronic device, obtaining target environment parameters corresponding to the electronic device, and constructing target storage environments according to the target environment parameters; performing long-term storage failure analysis on the electronic device in the target storage environments, obtaining sensitive stresses corresponding to the target storage environments; performing an accelerated storage test of the electronic device based on the sensitive stresses in the target storage environments, obtaining a single activation energy parameter corresponding to the electronic device; obtaining a failure acceleration coefficient and a stress weight corresponding to the target storage environments, and obtaining an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficient and the stress weight corresponding to all target storage environments.

[0120] In one embodiment, the computer program is executed by the processor to involve performing stress profile analysis on an electronic device, obtaining target environment parameters corresponding to the electronic device, comprising: performing stress analysis on a typical event of the electronic device within a storage life cycle of the electronic device, obtaining event environment parameters corresponding to the typical event, and constructing event environments according to the event environment parameters; performing environmental stress influence analysis on the electronic device in the event environments, obtaining environmental influence parameters corresponding to the event environments; obtaining a storage stress spectrum according to environmental stress data and environmental influence parameters corresponding to all event environments, and obtaining target environment parameters corresponding to the electronic device according to the storage stress spectrum.

[0121] In one embodiment, the computer program is executed by the processor to involve the long-term storage failure analysis of the electronic device, and the sensitive stress corresponding to the target storage environment is obtained, including: performing storage failure mode and failure mechanism analysis on the electronic device to obtain the corresponding relationship between the target failure mechanism of the electronic device and the environmental stress; and obtaining the sensitive stress corresponding to the target storage environment according to the corresponding relationship.

[0122] In one embodiment, the computer program is executed by the processor to involve the accelerated storage test of the electronic device based on the sensitive stress, and the single activation energy parameter corresponding to the electronic device is obtained, including: performing accelerated storage test on the electronic device under the stress condition corresponding to the sensitive stress, and determining the performance sensitive parameter corresponding to the electronic device according to the test result; obtaining the performance degradation model of the electronic device according to the performance sensitive parameter, performing failure analysis on the performance degradation model, and obtaining the single activation energy parameter corresponding to the electronic device.

[0123] In one embodiment, the computer program is executed by the processor to involve the obtaining of the failure acceleration coefficient and the stress weight corresponding to the target storage environment, including: obtaining the failure acceleration coefficient corresponding to the target storage environment according to the device characteristics and the performance sensitive parameter of the electronic device; and obtaining the stress weight corresponding to the target storage environment according to the storage stress spectrum.

[0124] In one embodiment, the computer program is executed by the processor to involve the obtaining of the equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficient and the stress weight corresponding to all target storage environments, including: obtaining the weighted acceleration coefficient of the electronic device according to the failure acceleration coefficient and the stress weight corresponding to all target storage environments; and obtaining the equivalent activation energy of the electronic device according to the single activation energy parameter and the weighted acceleration coefficient.

[0125] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when executed, can include the processes of the above-mentioned embodiment methods. Any reference to memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. The non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. The volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, the RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided in the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided in the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, an artificial intelligence (AI) processor, etc., without being limited thereto.

[0126] The technical features of the above embodiments can be combined in any manner. To make the description concise, all possible combinations of the technical features in the above embodiments are not described, but as long as the combinations of the technical features do not exist, they should be considered as the scope of the present application.

[0127] The above-described embodiments are merely illustrative of several embodiments of the present application, which are described in more detail and in a specific manner, but should not be construed as limiting the scope of the patent of the present application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. An equivalent activation energy acquisition method, characterized in that, The method comprises: stress profile analysis of the electronic device to obtain target environmental parameters corresponding to the electronic device, and construction of a target storage environment according to the target environmental parameters; long-term storage failure analysis of the electronic device in the target storage environment to obtain sensitive stresses corresponding to the target storage environment; accelerated storage testing of the electronic device based on the sensitive stresses in the target storage environment to obtain a single activation energy parameter corresponding to the electronic device; obtaining of failure acceleration coefficients and stress weights corresponding to the target storage environment, and obtaining of an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and the stress weights corresponding to all target storage environments; wherein a calculation formula of the equivalent activation energy is: wherein AF is a weighted acceleration coefficient, T0 is a reference temperature under the target storage environment, and T1 is an absolute temperature set in the accelerated testing; wherein a calculation formula of the weighted acceleration coefficient AF is: wherein, is the high temperature storage environment storage stress weight, is the corresponding acceleration factor; is the temperature cycling storage environment storage stress weight, is the corresponding acceleration factor; is the damp heat storage environment storage stress weight, is the corresponding acceleration factor.

2. The method of claim 1, wherein, The stress profile analysis of the electronic device to obtain target environmental parameters corresponding to the electronic device comprises: stress analysis of the electronic device for typical events to obtain event environmental parameters corresponding to the typical events, and construction of event environments according to the event environmental parameters, within a storage life cycle of the electronic device; environmental stress influence analysis of the electronic device in the event environments to obtain environmental influence parameters corresponding to the event environments; obtaining of a storage stress spectrum according to the environmental stress data and the environmental influence parameters corresponding to all event environments, and obtaining of target environmental parameters corresponding to the electronic device according to the storage stress spectrum.

3. The method of claim 1, wherein, The long-term storage failure analysis of the electronic device to obtain sensitive stresses corresponding to the target storage environment comprises: storage failure mode and failure mechanism analysis of the electronic device to obtain a corresponding relationship between target failure mechanisms and environmental stresses of the electronic device; obtaining of the sensitive stresses corresponding to the target storage environment according to the corresponding relationship.

4. The method of claim 1, wherein, The accelerated storage testing of the electronic device based on the sensitive stresses to obtain a single activation energy parameter corresponding to the electronic device comprises: accelerated storage testing of the electronic device under stress conditions corresponding to the sensitive stresses, and determination of performance sensitive parameters corresponding to the electronic device according to test results; obtaining of a performance degradation model of the electronic device according to the performance sensitive parameters, failure analysis of the performance degradation model, and obtaining of a single activation energy parameter corresponding to the electronic device.

5. The method of claim 2, wherein, The obtaining of failure acceleration coefficients and stress weights corresponding to the target storage environment comprises: obtaining of failure acceleration coefficients corresponding to the target storage environment according to device characteristics and performance sensitive parameters of the electronic device; obtaining of stress weights corresponding to the target storage environment according to the storage stress spectrum.

6. The method of claim 1, wherein, The obtaining of an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and the stress weights corresponding to all target storage environments comprises: According to the failure acceleration coefficients and stress weights corresponding to all target storage environments, a weighted acceleration coefficient of the electronic device is obtained; According to the single activation energy parameter and the weighted acceleration coefficient, an equivalent activation energy of the electronic device is obtained.

7. An equivalent activation energy acquisition device, characterized by, The device comprises: a stress analysis module configured to perform stress profile analysis on the electronic device, to obtain target environment parameters corresponding to the electronic device, and to construct target storage environments according to the target environment parameters; a failure analysis module configured to perform long-term storage failure analysis on the electronic device in the target storage environments, to obtain sensitive stresses corresponding to the target storage environments; a storage test module configured to perform accelerated storage tests on the electronic device based on the sensitive stresses in the target storage environments, to obtain a single activation energy parameter corresponding to the electronic device; an activation energy acquisition module configured to obtain failure acceleration coefficients and stress weights corresponding to the target storage environments, and to obtain an equivalent activation energy of the electronic device according to the single activation energy parameter, the failure acceleration coefficients and stress weights corresponding to all target storage environments; wherein the calculation formula of the equivalent activation energy is: wherein AF is a weighted acceleration coefficient; T0 is a reference temperature under the target storage environment; and T1 is an absolute temperature set in the accelerated test; wherein the calculation formula of the weighted acceleration coefficient AF is: wherein, is the high temperature storage environment storage stress weight, is the corresponding acceleration factor; is the temperature cycling storage environment storage stress weight, is the corresponding acceleration factor; is the damp heat storage environment storage stress weight, is the corresponding acceleration factor.

8. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that, The processor executes the computer program to implement the steps of the method of any one of claims 1 to 6.

9. A computer readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method of any one of claims 1 to 6.

10. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method of any one of claims 1 to 6.

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