High-pressure substrate processing apparatus and cold trap therefor

Abstract

The invention relates to a high pressure substrate processing apparatus and a cold trap for the same. The cold trap may include a housing, a cooling plate, and a refrigerant line. The housing may have an interior space in communication with an inlet and an outlet. The cooling plate may be disposed in the internal space, and is formed to cool a by-product contained in a mixed gas flowing from the substrate processing chamber into the internal space from the inlet, and then perform primary trapping. The refrigerant line is formed to accommodate a refrigerant in a state of being disposed behind the cooling plate in a flow direction of the mixed gas from the inlet to the outlet in the internal space, and is connected to the cooling plate such that heat of the mixed gas is discharged to the refrigerant. The refrigerant line may define a well space for cooling the by-products for secondary capture.

Description

Technical Field

[0001] The present invention relates to a cold trap and a high - pressure substrate processing apparatus having the cold trap. Background Art

[0002] Generally, during the manufacturing process of semiconductor devices, various processes are performed on semiconductor wafers. Examples of such processes include oxidation, nitridation, deposition, and ion implantation. There is also a heat treatment process using hydrogen or deuterium to improve the interface characteristics of semiconductor devices.

[0003] Process gases are supplied to a chamber, and the process gases act on the semiconductor wafer for processing. During the action of the process gases, by - products such as particles are emitted from the semiconductor wafer.

[0004] In the exhaust stage after processing, the by - products can be mixed with the process gases and exhausted. The by - products are gaseous in a high - temperature environment, but may be solidified during the process of leaving the chamber or after leaving.

[0005] The solidified by - products adhere to the inner walls of exhaust pipes, gas discharge valves, other scrubbers, or vacuum pumps. This will cause problems such as blockage of flow channels in pipes and valves. The scope of the problem may be very long along the flow path of the gas and by - products. To solve these problems, devices for collecting by - products are being used. Summary of the Invention

[0006] Technical Problems to be Solved

[0007] According to the inventor's understanding, the by - product collection device collects by - products by cooling the exhaust gas, and the cooling performance will determine the collection efficiency of the by - products. Conventionally, the by - product collection device is installed only in front of the scrubber to solve the problem of blockage in the paths of the scrubber and the vacuum pump.

[0008] An object of the present invention is to provide a high - pressure substrate processing apparatus and a cold trap for the apparatus, which can avoid the adverse effects of by - products on the gas exhaust device for adjusting the chamber exhaust volume and the components involved therein.

[0009] Another object of the present invention is to provide a high - pressure substrate processing apparatus and a cold trap for the apparatus, which can minimize the burden of the high - pressure design on the cold trap even when the cold trap is used in a high - pressure processing apparatus.

[0010] The problems to be solved by the present invention are not limited to the above problems, and other technical problems not mentioned will be clearly understood by those of ordinary skill in the technical field to which the present invention pertains from the following description.

[0011] Means for Solving the Problems

[0012] To achieve the above object, a high-pressure substrate processing apparatus according to one aspect of the present invention includes: an internal chamber formed to accommodate a substrate to be processed; an external chamber having: a housing having a protection chamber; a partition arranged to divide the protection chamber into a high-temperature region for accommodating the internal chamber and a low-temperature region having a temperature lower than that of the high-temperature region; a gas supply module configured to supply a reaction gas for processing the substrate to the internal chamber to reach a first pressure higher than the atmospheric pressure, and supply a protection gas to a space between the external chamber and the internal chamber to reach a second pressure set in association with the first pressure; an exhaust module configured to communicate with the internal chamber and having an exhaust pipe passing through the low-temperature region for discharging a mixed gas containing the reaction gas and by-products generated during the processing; and a cold trap having a cooling plate formed to cool and trap by-products in the mixed gas, the cold trap being located in the low-temperature region in communication with the exhaust pipe.

[0013] At this time, the cold trap further includes a refrigerant pipeline through which a refrigerant flows, and the cooling plate is formed to be connected to the refrigerant pipeline and discharge heat of the mixed gas to the refrigerant.

[0014] At this time, the refrigerant pipeline includes a cooling coil wound in a coil shape, and the cooling plate is coupled to the cooling coil.

[0015] At this time, the cooling plate includes a hollow portion formed to communicate with the refrigerant pipeline and receive the refrigerant.

[0016] At this time, the cold trap further includes a housing for accommodating the cooling plate; an entire section along the outer peripheral direction of the cooling plate is formed to be spaced apart from the inner peripheral surface of the housing to allow the mixed gas to pass through.

[0017] A cold trap for a high-pressure substrate processing apparatus according to another aspect of the present invention includes: a housing having an internal space communicating with an inlet and an outlet; a cooling plate formed to be arranged in the internal space to cool and primarily trap by-products contained in a mixed gas flowing into the internal space from a substrate processing chamber through the inlet; and a refrigerant pipeline formed to receive a refrigerant in a state of being arranged behind the cooling plate along a flow direction of the mixed gas from the inlet to the outlet in the internal space and connected to the cooling plate to discharge heat of the mixed gas to the refrigerant, the refrigerant pipeline defining a well space for cooling and secondarily trapping the by-products.

[0018] At this time, the refrigerant pipeline includes a cooling coil wound around a winding axis and defining the well space.

[0019] At this time, the cooling plate is coupled to the cooling coil.

[0020] At this time, the cooling plate includes a hollow portion, which is formed to communicate with the refrigerant pipeline and receive the refrigerant.

[0021] At this time, the entire section in the circumferential direction of the cooling plate is formed to be separated from the inner circumferential surface of the housing, allowing the mixed gas to pass through.

[0022] At this time, it further includes a filter located behind the well space in the flow direction, and the interval between the cooling plate and the inlet is greater than the interval between the filter and the outlet.

[0023] According to another aspect of the present invention, a high-pressure substrate processing apparatus includes: an internal chamber formed to accommodate a substrate to be processed; an external chamber formed to accommodate the internal chamber; a gas supply module configured to supply a reaction gas for processing the substrate to the internal chamber to reach a first pressure higher than atmospheric pressure, and supply a protective gas to the space between the external chamber and the internal chamber to reach a second pressure set in association with the first pressure; an exhaust module having: an exhaust pipe communicating with the internal chamber; and a gas discharger provided on the exhaust pipe for adjusting the discharge of a mixed gas containing the reaction gas and by-products generated during processing; and a cold trap having a cooling plate formed to cool the mixed gas and trap the by-products, and the cold trap is located in front of the gas discharger in communication with the exhaust pipe.

[0024] At this time, the cold trap is arranged in the external chamber such that its exterior is exposed to the second pressure by the protective gas and its interior is exposed to the first pressure by the mixed gas.

[0025] At this time, the first pressure is several tens of ATM, and the difference between the first pressure and the second pressure is 2 ATM or less.

[0026] At this time, the cold trap includes: a cooling plate formed to cool and once trap the by-products contained in the mixed gas; and a cooling coil defining a well space for cooling and secondarily trapping the by-products.

[0027] Advantages of the Invention

[0028] According to the high-pressure substrate processing apparatus of the present invention configured as described above, when discharging the gas in the internal chamber in a state where gases are respectively supplied to the internal chamber for accommodating the substrate and the external chamber surrounding the internal chamber to reach the first pressure or the second pressure, since the cold trap operates in a state of being installed in front of the exhaust device, it is possible to prevent the by-products from having an adverse effect on the gas discharger and the components involved therein. This enables more precise adjustment of the air pressure difference between the internal chamber and the external chamber. Since the cold trap is disposed in the external chamber, it is possible to prevent the adverse effect of the by-products from extending beyond the external chamber.

[0029] If the cold trap is located in the outer chamber and is internally exposed to a first pressure higher than atmospheric pressure and externally exposed to a second pressure related to the first pressure, then, despite the high-pressure treatment of the substrate, the cold trap may not require a high level of high-pressure design.

[0030] Since the cold trap is disposed in a low-temperature region different from the high-temperature region in the outer chamber, the cold trap can more strongly cool the gas discharged from the inner chamber, and thus, more effectively collect by-products. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a conceptual diagram of a high-pressure substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 2 is to show Figure 1 a partial cross-sectional view of the specific relationship between the chamber and the cold trap.

[0033] Figure 3 is to show Figure 1 a perspective view of the cold trap structure.

[0034] Figure 4 is to show Figure 3 a cross-sectional view of the relationship between the housing and the cooling plate.

[0035] Figure 5 is to show a disassembled perspective view of the main structure of a cold trap according to a modified example of Figure 3 the cold trap.

[0036] Figure 6 is a partial cut-away perspective view of the main structure of a cold trap according to another embodiment of the present invention.

[0037] Figure 7 is to show Figure 6 a partial cut-away perspective view of the main structure of a cold trap according to a modified example of the cold trap.

[0038] (DESCRIPTION OF REFERENCE NUMERALS)

[0039] 100: High-pressure substrate processing apparatus 110: Inner chamber

[0040] 120: Outer chamber 130: Supply module

[0041] 140: Exhaust module 150, 150', 250, 250': Cold trap

[0042] 151: Housing 155, 255: Cooling coil

[0043] 158, 158', 258, 258': Cooling plate 160: Heating module DETAILED DESCRIPTION

[0044] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0045] The present invention is not limited to the embodiments disclosed below, and various modifications can be made and can be implemented in various forms different from each other. These embodiments are provided only to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention. Therefore, it should be understood that the present invention is not limited to the embodiments disclosed below, and includes not only replacing or adding the structures of one embodiment with those of other embodiments, but also all modifications, equivalents, and alternatives included within the technical concept and scope of the present invention.

[0046] It should be understood that the accompanying drawings are only for easily understanding the embodiments disclosed in this specification, and do not limit the technical concept disclosed in this specification, including all modifications, equivalents, and alternatives included within the concept and technical scope of the present invention. In the drawings, for the convenience of understanding, etc., the sizes or thicknesses of the components may be exaggerated or reduced excessively, but the scope of protection of the present invention is not limited thereby.

[0047] The terms used in this specification are only used to describe specific implementation examples or embodiments, and are not intended to limit the present invention. Moreover, when not clearly defined in the context, singular expressions include plural expressions. Terms such as "including ~" and "consisting of ~" in the specification are used to specify the existence of features, numbers, steps, operations, components, devices, or combinations thereof described in the specification. That is, it should be understood that terms such as "including ~" and "consisting of ~" in the specification do not preclude the existence or additional possibility of one or more other features, numbers, steps, operations, components, devices, or combinations thereof in advance.

[0048] Ordinal terms such as first, second, etc. may be used in describing various components, but the components are not limited by these terms. These terms are only used to distinguish one component from other components.

[0049] When referring to a component being "connected" or "connected to" another component, it should be understood that it may also be directly connected or connected to the other component, or there may be other components in between. On the contrary, when referring to a component being "directly connected" or "directly connected to" another component, it should be understood that there are no other components in between.

[0050] When referring to a component being "located" "above" or "below" another component, it should be understood that it is not only directly disposed above the other component, but there may also be other components in between.

[0051] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries shall be interpreted as having a meaning consistent with the context of the relevant art, and shall not be interpreted in an ideal or overly formal sense unless clearly defined in this application.

[0052] Figure 1 It is a conceptual diagram of a high-pressure substrate processing apparatus according to an embodiment of the present invention.

[0053] Referring to this figure, the high-pressure substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, a gas supply module 130, an exhaust module 140, and a cold trap 150.

[0054] The internal chamber 110 may have a housing (inner shell) for forming a processing chamber (processing area) for accommodating a substrate. A door for opening and closing the processing chamber may be provided at the lower end of the housing. The internal chamber 110 may be made of a non-metallic material, such as quartz, to reduce the possibility of contamination of the substrate in a high-temperature and high-pressure working environment. The substrate may be, for example, a semiconductor wafer (wafer) mounted on a loading stage. The substrate is not limited to the wafer, and any structure used for forming a circuit may be used. For example, the substrate may also include glass for manufacturing a display. The loading stage may be a boat for loading one or more substrates.

[0055] The external chamber 120 may have a (outer) housing 121 having a protecting area for accommodating the internal chamber 110. A door may also be provided at the lower part of the housing 121. The door (outer door) moves with the movement of the door (inner door) of the internal chamber 110 to open the protecting area. The internal chamber 110 may be placed in the external chamber 120. Different from the internal chamber 110, the external chamber 120 is not affected by contamination, and thus may be made of a metal material.

[0056] The gas supply module 130 is a structure for supplying gas to the internal chamber 110 and the external chamber 120. The gas supply module 130 has a gas supplier 131 that serves as a gas source. The gas supplier 131 can selectively supply, for example, hydrogen gas (H2), deuterium gas (D2), fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. to the internal chamber 110 as reaction gases. The gas supplier 131 can supply, for example, nitrogen gas or argon gas (Ar) as an inert gas to the external chamber 120 as a protective gas. The reaction gas and the protective gas are each supplied to the internal chamber 110 or the external chamber 120 through a reaction gas pipeline 133 or a protective gas pipeline 135. The protective gas supplied to the external chamber 120 is specifically supplied to the space (protective space) between the external chamber 120 and the internal chamber 110. The reaction gas and the protective gas may also be collectively referred to as process gases.

[0057] The process gas can be supplied to the chambers 110 and 120 at a pressure higher than atmospheric pressure (high pressure), for example, a high pressure reaching several atmospheres to several tens of atmospheres or more. When the pressure in the internal chamber 110 is the first pressure and the pressure in the external chamber 120 (the protective space) is the second pressure due to the supply of the process gas, they can maintain a set relationship (range). For example, it can be set such that the second pressure is actually the same as or slightly greater than the first pressure. This pressure relationship has the advantage of preventing the reaction gas from leaking from the internal chamber 110 and keeping the internal chamber 110 from breaking. The second pressure can also be set to be slightly lower than the first pressure, and in this case, the same effect as above can also be achieved. The pressure difference between the first pressure and the second pressure can be, for example, 2 ATM or less.

[0058] The exhaust module 140 is a structure for discharging the process gas. To discharge the reaction gas from the internal chamber 110, an exhaust pipe 141 can be connected to the upper part of the internal chamber 110. A gas discharger 143 can be provided inside the exhaust pipe 141. The gas discharger 143 can be a gas discharge valve for adjusting the discharge flow rate of the reaction gas. According to the operation of the gas discharger 143, the first pressure can be maintained or adjusted to be lower. The reaction gas may contain by-products generated during the processing of the substrate. Since the reaction gas is mixed with the by-products, they can be collectively referred to as a mixed gas.

[0059] To discharge the protective gas from the external chamber 120, similarly, there can be an exhaust pipe 145 communicating with the external chamber 120 and a gas discharger 147 provided therein. If these exhaust pipes 141 and 145 are integrated into one, the reaction gas will be diluted by the protective gas, resulting in a lower concentration.

[0060] The cold trap 150 is a structure for collecting by-products in the mixed gas flowing along the exhaust pipe 141. The by-products can exist in a gaseous state in a high-temperature environment and solidify when cooled. The cold trap 150 can be located in front of the gas discharger 143 along the gas discharge direction in the exhaust pipe 141. The cold trap 150 can also be arranged inside the external chamber 120 and communicate with the exhaust pipe 141, but is not limited thereto. In an alternative embodiment, the cold trap 150 can also be located outside the external chamber 120.

[0061] According to this structure, the gas discharger 143 is used to discharge the reaction gas from the internal chamber 110 to adjust (reduce) the first pressure. The second pressure having a set relationship with the first pressure is adjusted by adjusting the first pressure. Since the protective gas does not contain the by-products, the gas discharger 147 for adjusting the second pressure may not be adversely affected by the by-products. On the contrary, the gas discharger 143 for adjusting the first pressure may be adversely affected by the by-products. Nevertheless, since the cold trap 150 is located in front of the gas discharger 143 and collects the by-products before the by-products flow into the gas discharger 143, the gas discharger 143 can operate normally without being adversely affected by the by-products. As a result, the cold trap 150 is not only important in adjusting the first pressure, but also important in adjusting the second pressure related to the first pressure.

[0062] Since the cold trap 150 is located inside the external chamber 120, the by-products are collected inside the external chamber 120. The by-products may not have a negative impact on the area outside the external chamber 120. Specifically, the part of the exhaust pipe 141 below the cold trap 150, the gas discharger 143, the scrubber, etc.

[0063] Since the cold trap 150 is interposed between the exhaust pipe 141 and the internal chamber 110 and communicates therewith, its interior is also exposed to the first pressure. The exterior of the cold trap 150 can be exposed to the second pressure by the protective gas. Since the second pressure maintains a set relationship with the first pressure, the pressure difference between them is not large. Even when the first pressure reaches dozens of atmospheres, the cold trap 150 is exposed to the pressure difference rather than the first pressure. Thus, the cold trap 150 does not require a high-pressure design corresponding to a high level of dozens of atmospheres.

[0064] Figure 2 To show Figure 1 A partial cross-sectional view of the specific relationship between the chamber and the cold trap.

[0065] Please refer to this figure. The housing 121 of the external chamber 120 can include a main body portion 121a and a cover portion 121b. When the main body portion 121a is generally cylindrical in shape, the cover portion 121b can generally have a dome shape.

[0066] The protection chamber can be divided into two regions by a partition plate 125. The partition plate 125 can be arranged below the cover part 121b while being supported by the main body part 121a. The partition plate 125 can, together with the main body part 121a, define a high-temperature region 123, and together with the cover part 121b, define a low-temperature region 127. The high-temperature region 123 and the low-temperature region 127 are connected by a communication hole (not shown) formed in the partition plate 125, and can have the same pressure (the second pressure) with each other.

[0067] In addition to the internal chamber 110, a heating module 160 can be arranged in the high-temperature region 123. The heating module 160 can include a heater 161 and a heat insulation block 165. The heater 161 can have a shape surrounding the internal chamber 110. The protective gas in the high-temperature region 123 and the reaction gas in the internal chamber 110 can be heated by the heat generated in the heater 161. By operating the heater 161, the temperature of the reaction gas can reach several hundred to several thousand degrees Celsius. The heat insulation block 165 prevents the heat of the heater 161 from being transferred to the main body part 121a.

[0068] Corresponding to the heater 161, a heat insulation layer 125a can be provided at the lower part of the partition plate 125. The heat insulation layer 125a is arranged on the upper side of the heating module 160 opposite to the heater 161.

[0069] A cooling layer 125b can be provided at the upper part of the partition plate 125. The cooling layer 125b can have a space for accommodating a refrigerant such as cooling water. Corresponding to the cooling layer 125b, a space for accommodating the refrigerant can also be provided in the cover part 121b. The refrigerant is not limited to the cooling water, and can also be a cooling gas.

[0070] The refrigerant accommodated in the cover part 121b and / or the cooling layer 125b can charge cold air into the low-temperature region 127. Thus, the low-temperature region 127 can be maintained at a temperature lower than that of the high-temperature region 123, for example, maintained at a temperature of one fraction to one tenth or less of that of the high-temperature region 123.

[0071] The cold trap 150 can be installed in the exhaust pipe 141 and is located in the low-temperature region 127. Not only the mixed gas flowing along the exhaust pipe 141 and the cold trap 150, but also the cold trap 150 is affected by the cold air.

[0072] According to this structure, the mixed gas flows from the high-temperature region 123 to the low-temperature region 127 along the exhaust pipe 141 and flows into the cold trap 150. The mixed gas passes through the cold trap 150 at a temperature cooler than the high temperature during the processing of the substrate. The function of the low-temperature region 127 is to preliminarily or pre-cool the mixed gas to improve the cooling performance of the cold trap 150. As a result, the cooling load in the cold trap 150 is reduced, or the cooling efficiency of the cold trap 150 becomes higher. The collection efficiency of the cold trap 150 for the by-products can also be improved.

[0073] In an alternative embodiment, the protection chamber may form a single space that is not divided into the high-temperature region 123 and the low-temperature region 127 (see Figure 1 ). The cold trap 150 may be located within the single space, for example, in a region least affected by the heat of the heater 161.

[0074] Please refer to Figure 3 and Figure 4 for a description of the specific structure of the cold trap 150. Figure 3 To show a perspective view of the cold trap structure of Figure 1 , Figure 4 To show a cross-sectional view of the relationship between the housing and the cooling plate of Figure 3 .

[0075] Please refer to Figure 3 and Figure 4 , the cold trap 150 may include a housing 151, a cooling coil 155, a cooling plate 158, and a filter 159.

[0076] The housing 151 is a hollow body having an internal space. The housing 151 may have, for example, a substantially rectangular shape. The housing 151 may be made of, for example, metal or synthetic resin. An inlet 152 may be formed on one side of the housing 151, and an outlet 153 may be formed on the other side. Both the inlet 152 and the outlet 153 may communicate with the exhaust pipe 141 (see Figure 1 ). When the mixed gas flows along the flow direction F connecting the inlet 152 to the outlet 153, the by-products are collected in the housing 151.

[0077] The cooling coil 155 is a structure disposed in the internal space for cooling the mixed gas and the cooling plate 158. The cooling coil 155 is part of a refrigerant pipeline, wound in a coil shape around the winding axis C. The cooling coil 155 accommodates the refrigerant and extends the residence time of the refrigerant in the internal space. The refrigerant pipeline may also have a refrigerant supply pipe 156 and a refrigerant recovery pipe 157 connected to the cooling coil 155. The refrigerant is supplied to the cooling coil 155 through the refrigerant supply pipe 156 and exits the cooling coil 155 through the refrigerant recovery pipe 157. The refrigerant supply pipe 156 and the refrigerant recovery pipe 157 may extend along an intersection direction I that at least partially intersects the flow direction F. The refrigerant pipeline may communicate with a supply pipeline that supplies the refrigerant to the cover portion 121b and the partition 125 (see Figure 2 ).

[0078] The cooling plate 158 is a structure for cooling the mixed gas and collecting the by-products. The cooling plate 158 is disposed opposite the inlet 152. The central region of the cooling plate 158 may be located at a height corresponding to the inlet 152. The cooling plate 158 may be in a solid and flat shape. The cooling plate 158 is illustrated as a circular plate, but the present invention is not limited thereto. In an alternative embodiment, the cooling plate 158 may be a polygonal plate such as a square plate.

[0079] The cooling plate 158 may be coupled to the refrigerant pipeline, specifically the cooling coil 155. For example, the cooling plate 158 may be welded to the cooling coil 155. The cooling plate 158 is used to discharge the heat of the mixed gas to the cooling coil 155, specifically to the refrigerant. The heat may be transferred from the cooling plate 158 to the cooling coil 155. The cooling plate 158 is located in front of the cooling coil 155 along the flow direction F and may be arranged parallel to the winding axis C of the cooling coil 155. Since the cooling plate 158 is not coupled to the outer shell 151 but to the cooling coil 155, the entire interval along the outer circumferential direction (circumferential direction) of the cooling plate 158 may be spaced apart from the inner circumferential surface of the outer shell 151. The mixed gas may flow unrestrictedly into the separation space T between the cooling plate 158 and the outer shell 151.

[0080] The filter 159 is a structure for filtering the by-products in the internal space. The filter 159 may be disposed between the cooling coil 155 and the outlet 153. The mesh portion 159a, which is part of the filter 159, may be located at a height deviated from the outlet 153. The portion of the filter 159 other than the mesh portion 159a is in a solid form and can block the flow of the mixed gas. The interval W2 between the filter 159 and the outlet 153 may be smaller than the interval W1 between the cooling plate 158 and the inlet 152.

[0081] According to this structure, by-products in the mixed gas flowing into the internal space are first solidified by the cooling effect of the cooling plate 158. The open space 158a of the interval W1 allows a large amount of by-products to adhere to the cooling plate 158. Since the by-products adhere to the cooling plate 158, the by-products can be in, for example, a bell shape lying on its side in the open space 158a.

[0082] By-products not trapped by the cooling plate 158 can be secondarily trapped by the cooling coil 155. The cooling coil 155 also solidifies the by-products by the action of the refrigerant. The by-products may adhere to the outer surface of the cooling coil 155, or may fall off from the outer surface and accumulate in the well space 155a defined by the cooling coil 155. Even if some by-products float up, they will be filtered out by the filter 159. In an alternative embodiment, the well space 155a can be formed in an integral cylindrical shape, and the refrigerant pipeline extends in a zigzag shape.

[0083] Since the by-products are solidified twice through the open space 158a and the well space 155a, the by-products can be trapped more reliably. In addition, the floating by-products can be prevented from being discharged to the outside by the filter 159. By thoroughly controlling the by-products, there will be no problem of blockage of the flow path due to the by-products in the gas flow path after the cold trap 150.

[0084] Figure 5 To show a perspective exploded view of the main structure of a cold trap according to a modified example of Figure 3 the cold trap.

[0085] Please refer to Figure 5 , in the cold trap 150' according to this modified example, the cooling plate 158' can also be connected to the cooling coil 155 by a method other than welding.

[0086] Specifically, hook portions 158b can be installed on the cooling plate 158'. The hook portions 158b can be welded to the cooling plate 158' or can be press-fitted using a groove and protrusion structure.

[0087] The hook portions 158b can be inserted into the cooling coil 155 to connect the cooling plate 158' to the cooling coil 155. The cooling plate 158' is connected to the cooling coil 155 by the hook portions 158b.

[0088] Even in this case, the heat of the cooling plate 158' can be transferred to the cooling coil 155 by the hook portions 158b without any problem.

[0089] Figure 6 To show a partially cutaway perspective view of the main structure of a cold trap according to another embodiment of the present invention.

[0090] Please refer to Figure 6, in another form of the cold trap 250, the cooling plate 258 can be in communication with the cooling coil 255. As a result, it can be configured such that the refrigerant flowing within the cooling coil 255 flows into the interior of the cooling plate 258. The cooling plate 258 can occupy a space independent of the cooling coil 255. For example, the cooling coil 255 can be located outside the cooling plate 258.

[0091] The cooling plate 258 can have a hollow container 258a. Partition walls 258b can be arranged in the hollow portion of the partition 258a. The partition walls 258b can form a path for the refrigerant to flow within the hollow portion.

[0092] With this structure, compared to the previous embodiments, the refrigerant can come into more direct contact with the mixed gas or the by-product. As a result, the heat of the mixed gas can be transferred to the refrigerant more efficiently.

[0093] Figure 7 For showing Figure 6 A partial cross-sectional perspective view of the main structure of the cold trap of a modified example of the cold trap.

[0094] Please refer to Figure 7 , in the cold trap 250' according to this modified example, the cooling plate 258' is not in communication with the cooling coil 255, and the refrigerant can be received through other paths. Other refrigerant supply pipelines 258c and refrigerant recovery pipelines 258d can be in communication with the cooling plate 258'. The refrigerant supply pipeline 258c and the refrigerant recovery pipeline 258d can form part of the refrigerant pipeline. The partition walls 258b within the container 258a can form, for example, a refrigerant flow path (not shown) connecting the refrigerant supply pipeline 258c and the refrigerant recovery pipeline 258d by holes.

[0095] According to this structure, the cooling plate 258' can be not connected to the cooling coil 255. In addition, only the cooling plate 258' can be arranged in the internal space without the cooling coil 255, and the by-product can also be trapped.

[0096] Although this specification has been described by taking the substrate processing apparatus 100 having a double chamber as an example, the present invention is not limited thereto. Structures such as the cold traps 150, 150', 250, 250' can also be applied to a processing apparatus having a single chamber. The single chamber is composed of a single housing and a door. A substrate is arranged in the processing chamber of the chamber, and a reaction gas for processing the substrate is additionally supplied. The housing and the door can correspond to the inner housing and the inner door within the aforementioned double chamber. The pressure of the reaction gas can be equal to the atmospheric pressure, or less than or greater than the atmospheric pressure. The cold trap can be located in front of the gas discharger.

[0097] The structures of the cold traps 150, 150', 250, 250', etc. can also be applicable to the semi-dual chamber, which is an intermediate form between the dual chamber and the single chamber. The semi-dual chamber can have two casings {inner casing and outer casing} and a door. The two casings can form a sealed space (corresponding to the above-mentioned protection space) by their own shapes or by means of other components. Similar to the foregoing embodiments, the substrate can be arranged in the processing chamber of the inner casing, the reaction gas can be injected, and the protection gas can be injected into the sealed space. Different from the previous embodiments, the door is not completely protected by the protection gas and is exposed to the outside. In this regard, the door can correspond to the outer door in the foregoing embodiments. The door can open and close the processing chamber. The cold traps 150, 150', 250, 250' can be located in the closed space.

[0098] Although a batch type processing apparatus is illustrated in this specification, the present invention is not limited thereto. The present invention can also be applied as it is to a single wafer type processing apparatus.

Claims

1. A high-voltage substrate processing apparatus, wherein, Comprising: An internal chamber, formed to accommodate a substrate to be processed; An external chamber, having: a housing, having a protection chamber; A partition, arranged to divide the protection chamber into a high-temperature region for accommodating the internal chamber and a low-temperature region having a temperature lower than that of the high-temperature region; A gas supply module, configured to supply a reaction gas for processing the substrate to the internal chamber to reach a first pressure higher than the atmospheric pressure, and supply a protective gas to the space between the external chamber and the internal chamber to reach a second pressure set in association with the first pressure; An exhaust module, configured to communicate with the internal chamber, having an exhaust pipe passing through the low-temperature region, for discharging a mixed gas containing the reaction gas and by-products generated during the processing; and A cold trap, having a cooling plate, the cooling plate being formed to cool and trap by-products in the mixed gas, the cold trap being located in the low-temperature region in communication with the exhaust pipe.

2. The high-voltage substrate processing apparatus according to claim 1, wherein, The cold trap further includes a refrigerant pipeline for the refrigerant to flow therein, The cooling plate is formed to be connected to the refrigerant pipeline and discharge the heat of the mixed gas to the refrigerant.

3. The high-voltage substrate processing apparatus according to claim 2, wherein, The refrigerant pipeline includes a cooling coil wound in a coil shape, The cooling plate is coupled to the cooling coil.

4. The high-voltage substrate processing apparatus according to claim 2, wherein, The cooling plate includes a hollow portion, the hollow portion being formed to communicate with the refrigerant pipeline and receive the refrigerant.

5. The high-pressure substrate processing apparatus according to claim 1, wherein, The cold trap further includes a housing for accommodating the cooling plate; The entire section along the outer peripheral direction of the cooling plate is formed to be spaced apart from the inner peripheral surface of the housing, allowing the mixed gas to pass through.

6. A cold trap for a high-voltage substrate processing apparatus, wherein, Comprising: A housing, having an internal space communicating with an inlet and an outlet; A cooling plate, formed to be arranged in the internal space to cool and once trap by-products contained in the mixed gas flowing into the internal space from a substrate processing chamber through the inlet; And A refrigerant pipeline, formed to receive the refrigerant in a state of being arranged behind the cooling plate along the flow direction of the mixed gas from the inlet to the outlet in the internal space, and connected to the cooling plate to discharge the heat of the mixed gas to the refrigerant, The refrigerant pipeline defines a well space for cooling the by-products and secondarily trapping the by-products.

7. The cold trap for a high-pressure substrate processing apparatus according to claim 6, wherein, The refrigerant pipeline includes a cooling coil wound around a winding axis and defining the well space.

8. The cold trap for a high-pressure substrate processing apparatus according to claim 7, wherein, The cooling plate is coupled to the cooling coil.

9. The cold trap for a high-pressure substrate processing apparatus according to claim 6, wherein, The cooling plate includes a hollow portion, the hollow portion being formed to communicate with the refrigerant pipeline and receive the refrigerant.

10. The cold trap for a high-pressure substrate processing apparatus according to claim 6, wherein, The entire section along the outer peripheral direction of the cooling plate is formed to be spaced apart from the inner peripheral surface of the housing, allowing the mixed gas to pass through.

11. The cold trap for a high-pressure substrate processing apparatus according to claim 6, wherein, It further includes a filter located behind the well space along the flow direction, The interval between the cooling plate and the inlet is greater than the interval between the filter and the outlet.

12. A high-voltage substrate processing apparatus, wherein, Comprising: An internal chamber, formed to accommodate a substrate to be processed; An external chamber, formed to accommodate the internal chamber; A gas supply module, configured to supply a reactive gas for processing the substrate to the internal chamber to achieve a first pressure higher than atmospheric pressure, and supply a protective gas to the space between the external chamber and the internal chamber to achieve a second pressure set in association with the first pressure; An exhaust module, comprising: an exhaust pipe communicating with the internal chamber; and a gas discharger provided on the exhaust pipe for adjusting the discharge of a mixed gas containing the reactive gas and by-products generated during the processing; and A cold trap, comprising a cooling plate formed to cool the mixed gas and trap the by-products, the cold trap being located in front of the gas discharger in communication with the exhaust pipe.

13. The high-voltage substrate processing apparatus according to claim 12, wherein, The cold trap is disposed in the external chamber such that its exterior is exposed to the second pressure by the protective gas and its interior is exposed to the first pressure by the mixed gas.

14. The high-voltage substrate processing apparatus according to claim 13, wherein, The first pressure is several tens of ATM, wherein the difference between the first pressure and the second pressure is 2 ATM or less.

15. The high-voltage substrate processing apparatus according to claim 12, wherein, The cold trap includes: A cooling plate formed to cool and primarily trap the by-products contained in the mixed gas; and A cooling coil defining a well space for cooling and secondarily trapping the by-products.

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