Substrate structure and manufacturing method thereof

Abstract

The invention provides a substrate structure and a manufacturing method thereof. The substrate structure comprises an inorganic substrate, an adhesion promoting layer, an electroless nickel-phosphorus plating layer and a conductive material. The inorganic substrate has an upper surface, a lower surface and at least one through hole. The adhesion promoting layer is disposed on the upper surface and the lower surface of the inorganic substrate and the inner wall of the at least one through hole. The electroless nickel-phosphorus plating layer is disposed on a portion of the adhesion promoting layer. The conductive material is disposed on the electroless nickel-phosphorus plating layer and fills the at least one through hole to define at least one first conductive circuit located on the upper surface, at least one second conductive circuit located on the lower surface, and at least one conductive through hole located in the through hole and electrically connected with the at least one first conductive circuit and the at least one second conductive circuit. According to the substrate structure and the manufacturing method thereof, the production cost can be reduced, and the product reliability can be improved.

Description

Technical Field

[0001] The present invention relates to a substrate structure and a manufacturing method thereof, and particularly to a substrate structure having conductive vias and a manufacturing method thereof. Background Art

[0002] Generally speaking, due to the problem of adhesion between an inorganic substrate and a metal layer, the metal layer is deposited on the inorganic substrate by dry deposition methods (such as physical vapor deposition (PVD) or chemical vapor deposition (CVD)). However, using dry deposition methods to form the metal layer is costly, and for blind vias and through-holes with a high aspect ratio, there is often a problem of too low step coverage during the dry deposition process, thus increasing process defects and reducing product reliability. Summary of the Invention

[0003] The present invention is directed to a substrate structure and a manufacturing method thereof, which can reduce production costs and improve product reliability.

[0004] According to an embodiment of the present invention, the substrate structure includes an inorganic substrate, an adhesion promoting layer, an electroless nickel-phosphorus plating layer, and a conductive material. The inorganic substrate has an upper surface and a lower surface opposite to each other and at least one through-hole penetrating the inorganic substrate and connecting the upper surface and the lower surface. The adhesion promoting layer is disposed on the upper surface, the lower surface of the inorganic substrate, and the inner wall of at least one through-hole. The electroless nickel-phosphorus plating layer is disposed on a part of the adhesion promoting layer. The conductive material is disposed on the electroless nickel-phosphorus plating layer and fills at least one through-hole, thereby defining at least one first conductive circuit located on the upper surface, at least one second conductive circuit located on the lower surface, and at least one conductive via located in the through-hole and electrically connecting at least one first conductive circuit and at least one second conductive circuit.

[0005] In the substrate structure according to an embodiment of the present invention, the material of the above-mentioned inorganic substrate includes glass or ceramic.

[0006] In the substrate structure according to an embodiment of the present invention, the surface roughness of the above-mentioned inorganic substrate is between 1 nanometer and 50 nanometers.

[0007] In the substrate structure according to an embodiment of the present invention, the thickness of the above-mentioned inorganic substrate is between 50 micrometers and 1000 micrometers.

[0008] In the substrate structure according to an embodiment of the present invention, the diameter of the above-mentioned at least one through-hole is between 10 micrometers and 200 micrometers.

[0009] In the substrate structure according to an embodiment of the present invention, the material of the above adhesion promoting layer includes an oxide or a nitride.

[0010] In the substrate structure according to an embodiment of the present invention, the thickness of the above adhesion promoting layer is between 0.01 nanometers and 100 nanometers.

[0011] In the substrate structure according to an embodiment of the present invention, the above substrate structure further includes an electroless copper layer disposed between the electroless nickel-phosphorus plating layer and the conductive material.

[0012] In the substrate structure according to an embodiment of the present invention, the above substrate structure further includes at least one build-up structure disposed on at least one of the upper surface and the lower surface of the inorganic substrate. The at least one build-up structure includes at least one insulating layer, at least one conductive blind via, and at least one circuit line. The at least one insulating layer covers at least one of the at least one first conductive circuit and the at least one second conductive circuit. The at least one circuit line is located on the at least one insulating layer. The at least one conductive blind via is located within the at least one insulating layer and electrically connects the at least one circuit line and at least one of the at least one first conductive circuit and the at least one second conductive circuit.

[0013] According to an embodiment of the present invention, a method for manufacturing a substrate structure includes the following steps. Provide an inorganic substrate. The inorganic substrate has an upper surface and a lower surface opposite to each other and at least one through hole penetrating the inorganic substrate and connecting the upper surface and the lower surface. Form an adhesion promoting layer on the upper surface, the lower surface of the inorganic substrate, and the inner wall of the at least one through hole. Perform a wet process on the inorganic substrate to form an electroless nickel-phosphorus plating layer on the adhesion promoting layer. Form a conductive material on the electroless nickel-phosphorus plating layer and fill the at least one through hole, thereby defining at least one conductive through hole within the at least one through hole. Pattern the conductive material and the electroless nickel-phosphorus plating layer to define at least one first conductive circuit on the upper surface and at least one second conductive circuit on the lower surface. The at least one conductive through hole electrically connects the at least one first conductive circuit and the at least one second conductive circuit.

[0014] Based on the above, in the substrate structure and its manufacturing method of the present invention, the adhesion between the inorganic substrate and the metal layer is increased through the adhesion promoting layer, and the electroless nickel-phosphorus plating layer is formed on the adhesion promoting layer through a wet process, thereby solving the problem of too low step coverage faced in the dry deposition process of the prior art, reducing production costs and improving product reliability. Description of the Drawings

[0015] Figures 1A to 1D is a cross-sectional schematic diagram of a method for manufacturing a substrate structure according to an embodiment of the present invention;

[0016] Figure 2It is a schematic cross-sectional view of a substrate structure according to an embodiment of the present invention;

[0017] Figure 3 It is a schematic cross-sectional view of a substrate structure according to another embodiment of the present invention.

[0018] Description of Reference Numerals

[0019] 100a, 100b, 100c: Substrate structures;

[0020] 110: Inorganic substrate;

[0021] 111: Upper surface;

[0022] 112: Through hole;

[0023] 113: Lower surface;

[0024] 120: Adhesion promoting layer;

[0025] 130: Electroless nickel-phosphorus plating layer;

[0026] 140: Conductive material;

[0027] 150: Electroless copper layer;

[0028] 160a, 160b: Build-up structure;

[0029] 162a, 162b: Insulating layer;

[0030] 164a, 164b: Conductive blind hole;

[0031] 166a, 166b: Circuit;

[0032] C1: First conductive circuit;

[0033] C2: Second conductive circuit;

[0034] CT: Conductive through hole;

[0035] D: Diameter;

[0036] T1, T2, T3: Thickness. Detailed Description of the Invention

[0037] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0038] The embodiments of the present invention can be understood in conjunction with the accompanying drawings, and the accompanying drawings of the present invention are also regarded as part of the disclosure. It should be understood that the accompanying drawings of the present invention are not drawn to scale. In fact, the sizes of the elements may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0039] Figures 1A to 1D FIG. 4 is a cross-sectional schematic view of a method for manufacturing a substrate structure according to an embodiment of the present invention. According to the method for manufacturing the substrate structure of this embodiment, first, please refer to Figure 1A , provide an inorganic substrate 110, where the inorganic substrate 110 has an upper surface 111 and a lower surface 113 opposite to each other, and at least one through hole (two through holes 112 are schematically shown) penetrating the inorganic substrate 110 and connecting the upper surface 111 and the lower surface 113. In one embodiment, the inorganic substrate 110 is an insulating substrate, but not limited thereto. In one embodiment, the material of the inorganic substrate 110 is, for example, glass or ceramic, but not limited thereto. In this embodiment, the surface roughness of the inorganic substrate 110, such as the arithmetic mean roughness (Ra), is, for example, between 1 nanometer and 50 nanometers. The thickness T1 of the inorganic substrate 110 is, for example, between 50 micrometers and 1000 micrometers, and preferably, between 100 micrometers and 800 micrometers. The through hole 112 is specifically a glass through hole (TGV), and the diameter D of the through hole 112 is, for example, between 10 micrometers and 200 micrometers, and preferably, between 100 micrometers and 200 micrometers.

[0040] Next, please refer to Figure 1B , form an adhesion promoting layer 120 on the upper surface 111, the lower surface 113 of the inorganic substrate 110, and the inner wall of the through hole 112 by a dry deposition method, but not limited thereto. Here, the adhesion promoting layer 120 completely covers the upper surface 111, the lower surface 113 of the inorganic substrate 110, and the inner wall of the through hole 112. In one embodiment, the material of the adhesion promoting layer 120 is, for example, an oxide or a nitride. The oxide is, for example, titanium oxide (TiOX) (such as titanium monoxide (TiO) or titanium dioxide (TiO2)), silicon oxide (SiO X )(such as silicon dioxide (SiO2)) or aluminum oxide (Al2O3), and the nitride is, for example, silicon nitride (SiN X )(such as silicon nitride (Si3N4)). In this embodiment, the thickness T2 of the adhesion promoting layer 120 is, for example, between 0.01 nanometer and 100 nanometers, and the adhesion promoting layer 120 can increase the adhesion between the inorganic substrate 110 and the subsequently formed metal layer.

[0041] Next, please refer to Figure 1C, a wet process is performed on the inorganic substrate 110 to form an electroless nickel-phosphorus coating layer 130 on the adhesion promoting layer 120. Here, the electroless nickel-phosphorus coating layer 130 completely covers the adhesion promoting layer 120. In one embodiment, the thickness T3 of the electroless nickel-phosphorus coating layer 130 is, for example, greater than 0 and less than 1 micrometer.

[0042] Afterwards, please refer to Figure 1D The electroless nickel-phosphorus coating 130 is used as a plating seed layer, and a conductive material 140 is formed on the electroless nickel-phosphorus coating 130 by electroplating to fill the through hole 112, thereby defining at least one conductive via (two conductive vias CT are schematically shown) in the through hole 112.

[0043] Finally, please refer to Figure 1D , patterning the conductive material 140 and the electroless nickel-phosphorus plating layer 130, and defining at least one first conductive circuit (schematically showing three first conductive circuits C1) on the upper surface 111 and at least one second conductive circuit (schematically showing three second conductive circuits C2) on the lower surface 113. The conductive via CT electrically connects the first conductive circuit C1 and the second conductive circuit C2. At this point, the substrate structure 100a has been completed.

[0044] In terms of structure, please refer to Figure 1D , the substrate structure 100a includes an inorganic substrate 110, an adhesion promoting layer 120, an electroless nickel-phosphorus plating layer 130, and a conductive material 140. The inorganic substrate 110 has an upper surface 111 and a lower surface 113 opposite to each other, and a through hole 112 penetrating the inorganic substrate 110 and connecting the upper surface 111 and the lower surface 113. The adhesion promoting layer 120 is disposed on the upper surface 111 and the lower surface 113 of the inorganic substrate 110 and on the inner wall of the through hole 112. The electroless nickel-phosphorus plating layer 130 is disposed on a portion of the adhesion promoting layer 120, that is, the electroless nickel-phosphorus plating layer 130 does not completely cover the adhesion promoting layer 120, but exposes another portion of the adhesion promoting layer 120. The conductive material 140 is disposed on the electroless nickel-phosphorus plating layer 130 and fills the through hole 112 to define a first conductive circuit C1 on the upper surface 111 , a second conductive circuit C2 on the lower surface 113 , and a conductive through hole CT in the through hole 112 and electrically connecting the first conductive circuit C1 and the second conductive circuit C2 .

[0045] Briefly speaking, in this embodiment, the adhesion promoting layer 120 is used to increase the adhesion between the inorganic substrate 110 and the metal layers (such as electroless nickel-phosphorus plating layer 130 and conductive material 140), and the electroless nickel-phosphorus plating layer 130 is formed on the adhesion promoting layer 120 through a wet process, thereby solving the problem of too low step coverage faced in the dry deposition process of the prior art, reducing the production cost of the substrate structure 100a of this embodiment and improving the product reliability.

[0046] Other embodiments will be listed below for illustration. It must be noted here that the following embodiments follow the component numbers and some contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0047] Figure 2 is a cross-sectional schematic view of a substrate structure according to an embodiment of the present invention. Please also refer to Figure 1D and Figure 2 . The substrate structure 100b of this embodiment is similar to the above-mentioned substrate structure 100a, but the main difference between the two is that: in this embodiment, the substrate structure 100b further includes an electroless copper layer 150 disposed between the electroless nickel-phosphorus plating layer 130 and the conductive material 140. The bonding degree between the electroless nickel-phosphorus plating layer 130 and the adhesion promoting layer 120 is better than that between the electroless copper layer 150 and the adhesion promoting layer 120, which can improve the reliability.

[0048] Figure 3 is a cross-sectional schematic view of a substrate structure according to another embodiment of the present invention. Please also refer to Figure 1D and Figure 3, the substrate structure 100c of this embodiment is similar to the above-mentioned substrate structure 100a. However, the main difference between the two is that: in this embodiment, the substrate structure 100c further includes at least one build-up structure (two build-up structures 160a and 160b are schematically shown), wherein the build-up structures 160a and 160b are respectively disposed on the upper surface 111 and the lower surface 113 of the inorganic substrate 110. Specifically, the build-up structure 160a includes at least one insulating layer (one insulating layer 162a is schematically shown), at least one conductive blind via (two conductive blind vias 164a are schematically shown), and at least one circuit line (two circuit lines 166a are schematically shown). The insulating layer 162a covers the first conductive circuit C1, the circuit line 166a is located on the insulating layer 162a, and the conductive blind via 164a is located within the insulating layer 162a and is electrically connected to the circuit line 166a and the first conductive circuit C1. Similarly, the build-up structure 160b includes at least one insulating layer (one insulating layer 162b is schematically shown), at least one conductive blind via (two conductive blind vias 164b are schematically shown), and at least one circuit line (two circuit lines 166b are schematically shown). The insulating layer 162b covers the second conductive circuit C2, the circuit line 166b is located on the insulating layer 162b, and the conductive blind via 164b is located within the insulating layer 162b and is electrically connected to the circuit line 166b and the second conductive circuit C2. By providing the build-up structures 160a and 160b, a fan-out structure can be formed, thereby increasing the applicability of the substrate structure 100c.

[0049] In summary, in the substrate structure and its manufacturing method of the present invention, the adhesion between the inorganic substrate and the metal layer is increased by means of an adhesion promoting layer, and an electroless nickel-phosphorus coating is formed on the adhesion promoting layer through a wet process, thereby solving the problem of too low step coverage faced in the dry deposition process of the prior art, reducing the production cost and improving the product reliability.

[0050] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate structure, characterized in that, Comprising: An inorganic substrate having an upper surface and a lower surface opposite to each other, and at least one through hole penetrating the inorganic substrate and connecting the upper surface and the lower surface; An adhesion promoting layer disposed on the upper surface, the lower surface of the inorganic substrate, and the inner wall of the at least one through hole; An electroless nickel-phosphorus plating layer disposed on a part of the adhesion promoting layer; And A conductive material disposed on the electroless nickel-phosphorus plating layer and filling the at least one through hole, thereby defining at least one first conductive circuit on the upper surface, at least one second conductive circuit on the lower surface, and at least one conductive through hole located in the through hole and electrically connecting the at least one first conductive circuit and the at least one second conductive circuit.

2. The substrate structure according to claim 1, wherein The material of the inorganic substrate includes glass or ceramic.

3. The substrate structure according to claim 1, characterized in that The surface roughness of the inorganic substrate is between 1 nanometer and 50 nanometers.

4. The substrate structure according to claim 1, characterized in that, The thickness of the inorganic substrate is between 50 micrometers and 1000 micrometers.

5. The substrate structure according to claim 1, wherein The diameter of the at least one through hole is between 10 micrometers and 200 micrometers.

6. The substrate structure according to claim 1, wherein, The material of the adhesion promoting layer includes oxide or nitride.

7. The substrate structure according to claim 1, characterized in that, The thickness of the adhesion promoting layer is between 0.01 nanometer and 100 nanometers.

8. The substrate structure according to claim 1, wherein Further comprising: An electroless copper layer disposed between the electroless nickel-phosphorus plating layer and the conductive material.

9. The substrate structure according to claim 1, characterized in that, Further comprising: At least one build-up structure disposed on at least one of the upper surface and the lower surface of the inorganic substrate. The at least one build-up structure includes at least one insulating layer, at least one conductive blind hole, and at least one circuit. The at least one insulating layer covers at least one of the at least one first conductive circuit and the at least one second conductive circuit, and the at least one circuit is located on the at least one insulating layer. The at least one conductive blind hole is located in the at least one insulating layer and electrically connects the at least one circuit and at least one of the at least one first conductive circuit and the at least one second conductive circuit.

10. A substrate structure, characterized in that, Comprising: Providing an inorganic substrate having an upper surface and a lower surface opposite to each other, and at least one through hole penetrating the inorganic substrate and connecting the upper surface and the lower surface; Forming an adhesion promoting layer on the upper surface, the lower surface of the inorganic substrate, and the inner wall of the at least one through hole; Performing a wet process on the inorganic substrate to form an electroless nickel-phosphorus plating layer on the adhesion promoting layer; Forming a conductive material on the electroless nickel-phosphorus plating layer and filling the at least one through hole, thereby defining at least one conductive through hole in the at least one through hole; And Patterning the conductive material and the electroless nickel-phosphorus plating layer to define at least one first conductive circuit on the upper surface and at least one second conductive circuit on the lower surface. The at least one conductive through hole electrically connects the at least one first conductive circuit and the at least one second conductive circuit.

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