Solar cell, preparation method thereof and photovoltaic module

Abstract

The invention relates to a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a substrate, an SAM hole transport layer, a silane coupling agent layer, a perovskite light absorption layer and an electrode layer. The SAM hole transport layer is disposed on the substrate. And the silane coupling agent layer is arranged on the SAM hole transport layer. And the perovskite light absorption layer is arranged on the silane coupling agent layer. The electrode layer is arranged on the perovskite light absorption layer. According to the solar cell, the silane coupling agent layer is arranged on the SAM hole transport layer, and the silane coupling agent layer can reduce the influence of moisture, oxygen and other environmental factors on the SAM, so that the SAM does not generate obvious molecular rearrangement or hydrolysis reaction in the long-time storage process, the hydrolysis, oxidation and other degradation reactions of the SAM are reduced, and the service life of the SAM is prolonged. Therefore, performance reduction of the solar cell is prevented.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and particularly to a solar cell, a preparation method thereof, and a photovoltaic module. Background Art

[0002] SAM (self-assembled monolayer material), such as 2PACz ((2-(9H-carbazol-9-yl)ethyl)phosphonic acid), MeO-2PACz (methoxy-(2-(9H-carbazol-9-yl)ethyl)phosphonic acid), Me-4PACz ((4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid), etc., can be used as hole transport materials for solar cells and light-emitting diodes.

[0003] Currently, SAM has been reported to be processed by wet processes such as spin coating, spraying, doctor blading, slot die coating, and inkjet printing, and can also be deposited by vacuum thermal evaporation. In perovskite solar cells, the transparent conductive oxide substrate is usually subjected to plasma treatment or ultraviolet-ozone treatment to generate hydroxyl groups (-OH), and then a solution containing SAM is coated. SAM reacts with the hydroxyl groups through the anchoring group and is fixed on the substrate, and then a perovskite light-absorbing layer is prepared on the formed SAM hole transport layer.

[0004] However, research shows that the longer the storage time of the device with the SAM hole transport layer deposited before preparing the perovskite light-absorbing layer, the worse the performance such as the conversion efficiency of the solar cell. Summary of the Invention

[0005] Based on this, it is necessary to provide a solar cell, a preparation method thereof, and a photovoltaic module to solve the problem that the longer the storage time of the device with the SAM hole transport layer deposited, the worse the performance such as the conversion efficiency of the solar cell.

[0006] The first aspect of the present invention is to provide a solar cell, and the solution is as follows:

[0007] A solar cell, comprising:

[0008] A substrate;

[0009] A SAM hole transport layer disposed on the substrate;

[0010] A silane coupling agent layer disposed on the SAM hole transport layer;

[0011] A perovskite light-absorbing layer disposed on the silane coupling agent layer;

[0012] An electron transport layer, a buffer layer, and an electrode layer disposed on the perovskite light-absorbing layer.

[0013] In one embodiment, the silane coupling agent contained in the silane coupling agent layer includes one or more of fluorosilane, aminosilane, epoxy silane, mercapto silane, vinyl silane, methyl silane, phenyl silane, and aldehyde silane.

[0014] In one embodiment, the fluorosilane includes one or more of 3,3,3-trifluoropropylsilane, perfluoroalkylsilane, fluorophenylsilane, fluoroalkoxysilane, and fluoroaminosilane; the aminosilane includes one or more of γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminomethyltriethoxysilane, and p-aminophenyltriethoxysilane; the epoxy silane includes one or more of γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltriethoxysilane, epoxy methyltrimethoxysilane, and bis(3,4-epoxycyclohexyl)ethyl dimethoxysilane; the mercapto silane includes one or more of γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and mercaptoethyltrimethoxysilane; the vinyl silane includes one or more of vinyltrimethoxysilane, vinyltriethoxysilane, and vinyldimethoxyethoxysilane; the methyl silane includes one or more of methyltrimethoxysilane, dimethyldiethoxysilane, and trimethylmethoxysilane; the phenyl silane includes one or more of phenyltriethoxysilane, phenyltrimethoxysilane, and diphenyldimethoxysilane; and the aldehyde silane includes one or more of aldehydepropyltrimethoxysilane, aldehydeethyltrimethoxysilane, and p-formylphenyltriethoxysilane.

[0015] In one embodiment, the SAM hole transport layer contains SAM including a hole transport functional group and an anchoring group connected to the hole transport functional group. The hole transport functional group includes one or more of carbazole, triphenylamine, diphenylamine, thiophene, bithiophene, terthiophene, thiadiazole, spirofluorene, stilbene, benzothiophene, dibenzothiophene, benzothiazole, and thienopyrrolopyrrole dione. The anchoring group includes one or more of phosphonic acid, carboxylic acid, trimethoxysilane, triethoxysilane, trichlorosilane, mercapto group, primary amine, secondary amine, hydroxamic acid group, sulfonic acid group, pyridine, and isocyanate group.

[0016] In one embodiment, the SAM included in the SAM hole transport layer comprises [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethoxy-9H-carbazol-9-yl)hexyl]phosphonic acid, [2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethyl-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-dimethyl-9H-carbazol-9-yl)methyl]phosphonic acid, [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid, [8-(3,6-dimethyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(9H-carbazol-9-yl)methyl]phosphonic acid, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid, [3-(9H-carbazol-9-yl)propyl]phosphonic acid, [4-(9H-carbazol-9-yl)butyl]phosphonic acid, [6-(9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(9H-carbazol-9-yl)octyl]phosphonic acid, [4-(N,N-bis(4-methoxyphenylamino)phenyl)propyl]phosphonic acid, 2,3,4,5,6-pentafluorobenzylphosphonic acid, [2-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)ethyl]phosphonic acid, [4-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)butyl]phosphonic acid, [4-(diphenylamino)phenyl)ethyl]phosphonic acid, [4-(diphenylamino)phenyl)propyl]phosphonic acid, [4-(10H-phenothiazin-10-yl)butyl]phosphonic acid, [2-(7H-dibenzocarbazol-7-yl)ethyl]phosphonic acid, [4-(7H-dibenzocarbazol-7-yl)butyl]phosphonic acid, [3-(3,6-dibromo-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-dibromo-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-di-tert-butyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-di-tert-butyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-di-tert-butyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-di-tert-butyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-di-tert-butyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-di-tert-butyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(3,6-diphenyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-diphenyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-diphenyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,One or more of [6-(diphenyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-diphenyl-9H-carbazol-9-yl)octyl]phosphonic acid, [2-(10H-phenoxazin-10-yl)ethyl]phosphonic acid, [4-(3,7-dibromo-10H-phenothiazin-10-yl)butyl]phosphonic acid, and [4-(3,7-dibromo-10H-phenoxazin-10-yl)butyl]phosphonic acid.,

[0017] The second aspect of the present invention is to provide a method for preparing a solar cell, and the scheme is as follows:

[0018] A method for preparing a solar cell, comprising the following steps:

[0019] Provide a substrate;

[0020] Prepare a SAM hole transport layer on the substrate;

[0021] Prepare a silane coupling agent layer on the SAM hole transport layer;

[0022] Prepare a perovskite light-absorbing layer on the silane coupling agent layer;

[0023] Prepare an electrode layer on the perovskite light-absorbing layer.

[0024] In one embodiment, the step of preparing the silane coupling agent layer includes:

[0025] Take a silane coupling agent and dissolve it in a solvent to obtain a silane coupling agent solution;

[0026] Coat the silane coupling agent solution on the SAM hole transport layer;

[0027] After coating the silane coupling agent solution, perform a heat treatment to form the silane coupling agent layer.

[0028] In one embodiment, the preparation method meets at least one of the following characteristics (1) to (3):

[0029] (1) The concentration of the silane coupling agent solution is 0.1 mg / mL to 5 mg / mL;

[0030] (2) The coating thickness of the silane coupling agent solution is 4 nm to 100 nm;

[0031] (3) The temperature of the heat treatment is 50 °C to 80 °C, and the time is 10 min to 20 min.

[0032] In one embodiment, the preparation method meets at least one of the following characteristics (1) to (2):

[0033] (1) The silane coupling agent contained in the silane coupling agent layer includes one or more of fluorosilane, aminosilane, epoxy silane, mercapto silane, vinyl silane, methyl silane, phenyl silane, and aldehyde silane;

[0034] (2) The SAM contained in the SAM hole transport layer includes a hole transport functional group and an anchoring group connected to the hole transport functional group. The hole transport functional group includes one or more of carbazole, triphenylamine, diphenylamine, thiophene, bithiophene, tetrathiophene, thiadiazole, spirofluorene, stilbene, benzothiophene, dibenzothiophene, benzothiazole, and thiophene pyrrolopyrrolidione. The anchoring group includes one or more of phosphonic acid, carboxylic acid, trimethoxysilane, triethoxysilane, trichlorosilane, mercapto group, primary amine, secondary amine, hydroxamic acid group, sulfonic acid group, pyridine, and isocyanate group.

[0035] The third aspect of the present invention is to provide a photovoltaic module, and the solution is as follows:

[0036] A photovoltaic module includes a first encapsulation component, a second encapsulation component, and the solar cell described in any one of the above embodiments or a solar cell prepared by the preparation method described in any one of the above embodiments. The solar cell is disposed between the first encapsulation component and the second encapsulation component.

[0037] Compared with the traditional solution, the above solar cell, its preparation method, and photovoltaic module have the following beneficial effects:

[0038] The above solar cell is provided with a silane coupling agent layer on the SAM hole transport layer. The silane coupling agent layer can reduce the influence of environmental factors such as moisture and oxygen on the SAM, so that the SAM will not undergo obvious molecular rearrangement or hydrolysis reaction during long-term storage, thereby reducing the hydrolysis, oxidation, and other degradation reactions of the SAM, and thus preventing the performance degradation of the solar cell.

[0039] The above photovoltaic module includes the solar cell described in any one of the above embodiments or a solar cell prepared by the preparation method described in any one of the above embodiments. Therefore, it has corresponding technical features and can obtain corresponding beneficial effects. Description of the Drawings

[0040] Figure 1 is the water contact angle of the initially prepared 2PACz film;

[0041] Figure 2 is the water contact angle of the 2PACz film after storage for 48 hours;

[0042] Figure 3 is a schematic structural diagram of a solar cell according to an embodiment;

[0043] Figure 4 Schematic flow chart of the preparation method of a solar cell according to an embodiment.

[0044] Explanation of reference numerals:

[0045] 100, solar cell; 110, substrate; 120, SAM hole transport layer; 130, silane coupling agent layer; 140, perovskite light-absorbing layer; 150, electrode layer; 160, electron transport layer; 170, buffer layer. Detailed implementation manners

[0046] To facilitate the understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. The purpose of providing these embodiments is to make the understanding of the disclosure content of the present invention more thorough and comprehensive.

[0047] It should be noted that when an element is referred to as being "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation manner.

[0048] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity or order of the indicated technical features.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0050] Research shows that the greater the time difference between the completion of the step of depositing SAM and the step of preparing the perovskite light-absorbing layer, the worse the performance of the solar cell. Currently, there is less research on the stability of the prefabricated SAM. We found that after the prepared SAM is placed, as time goes by, the contact angle of SAM changes. As Figure 1 shown, the water contact angle of the initially prepared 2PACz film is 26°. As Figure 2As shown, after the 2PACz film was stored for 48 hours, its water contact angle changed significantly to 48°. It can be seen that the SAM has a problem of poor stability, which has an adverse effect on the performance of the solar cell.

[0051] Possible reasons for the above phenomena include:

[0052] 1. The anchored SAM may undergo hydrolysis under the action of water vapor in the air.

[0053] 2. The SAM may undergo molecular rearrangement during long-term storage. Its tail-anchoring group tends to bind to the substrate, and the exposed head group has stronger hydrophobicity, resulting in poor interfacial contact with the perovskite active layer.

[0054] 3. The attachment of organic pollutants in the environment will affect the interfacial activity.

[0055] The above factors may affect the energy level of the SAM, resulting in a mismatch with the perovskite active layer.

[0056] Therefore, the present invention provides a solar cell.

[0057] As Figure 3 shown, the solar cell 100 of an embodiment of the present invention includes a substrate 110, a SAM hole transport layer 120, a silane coupling agent layer 130, a perovskite light absorption layer 140, and an electrode layer 150. The SAM hole transport layer 120 is disposed on the substrate 110. The silane coupling agent layer 130 is disposed on the SAM hole transport layer 120. The perovskite light absorption layer 140 is disposed on the silane coupling agent layer 130. The electrode layer 150 is disposed on the perovskite light absorption layer 140. In other words, the substrate 110, the SAM hole transport layer 120, the silane coupling agent layer 130, the perovskite light absorption layer 140, and the electrode layer 150 are sequentially stacked.

[0058] The above-mentioned solar cell 100 is provided with a silane coupling agent layer 130 on the SAM hole transport layer 120. The silane coupling agent layer 130 can reduce the influence of environmental factors such as moisture and oxygen on the SAM, so that the SAM will not undergo obvious molecular rearrangement or hydrolysis reaction during long-term storage, thereby reducing the hydrolysis, oxidation and other degradation reactions of the SAM, and thus preventing the performance of the solar cell 100 from declining.

[0059] The silane coupling agent reacts chemically or physically with the anchoring groups such as the phosphonic acid group of SAM or other functional groups through the silanol groups generated after the hydrolysis of its silicon-oxygen-alkyl groups, forming strong covalent bonds or hydrogen bonds to enhance the stability of the SAM hole transport layer 120. Through this reaction, the silane coupling agent not only provides surface protection but also interacts with the SAM hole transport layer 120 through its molecular structure, improving the interfacial bonding force, thereby effectively preventing hydrolysis, rearrangement on the SAM surface or reaction with pollutants in the air.

[0060] In one embodiment, the silane coupling agent contained in the silane coupling agent layer 130 includes, but is not limited to, one or more of fluorosilanes, aminosilanes, epoxy silanes, mercapto silanes, vinyl silanes, methyl silanes, phenyl silanes, aldehyde silanes.

[0061] Optionally, the fluorosilane includes one or more of 3-trifluoropropylsilane, perfluoroalkylsilane, fluorophenylsilane, fluoroalkoxysilane, fluoroaminosilane.

[0062] Optionally, the aminosilane includes one or more of γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminomethyltriethoxysilane, p-aminophenyltriethoxysilane.

[0063] Optionally, the epoxy silane includes one or more of γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltriethoxysilane, epoxy methyltrimethoxysilane, bis(3,4-epoxycyclohexyl)ethyl dimethoxysilane.

[0064] Optionally, the mercapto silane includes one or more of γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, mercaptoethyltrimethoxysilane.

[0065] Optionally, the vinyl silane includes one or more of vinyltrimethoxysilane, vinyltriethoxysilane, vinyldimethoxyethoxysilane.

[0066] Optionally, the methyl silane includes one or more of methyltrimethoxysilane, dimethyldiethoxysilane, trimethylmethoxysilane.

[0067] Optionally, the phenyl silane includes one or more of phenyltriethoxysilane, phenyltrimethoxysilane, diphenyldimethoxysilane.

[0068] Optionally, the aldehyde group silane includes one or more of aldehyde group propyltrimethoxysilane, aldehyde group ethyltrimethoxysilane, and p-formylphenyltriethoxysilane.

[0069] The above silane coupling agent has good hydrophobicity and chemical stability. When the perovskite light-absorbing layer 140 is processed by the solution method, the low solubility of the silane coupling agent ensures that it will not dissolve or affect the wettability of the perovskite coating during the perovskite coating process, thus facilitating the improvement of the uniformity and deposition quality of the perovskite light-absorbing layer 140.

[0070] The functional groups of the above silane coupling agent (such as fluorinated groups, amino groups, epoxy groups, etc.) react or physically interact with the phosphonic acid groups or other hydrophilic groups in the SAM to form silicate bonds (Si–O–P) or hydrogen bonds, enhancing the interlayer bonding force. The silane coupling agent layer 130 effectively isolates water vapor and other substances through hydrophobic groups (such as fluorine atoms), thereby reducing the hydrolysis, oxidation, and other degradation reactions of the SAM.

[0071] In some examples, the SAM included in the SAM hole transport layer 120 includes hole transport functional groups and anchoring groups connected to the hole transport functional groups. The hole transport functional groups include, for example, but are not limited to, one or more of carbazole, triphenylamine, diphenylamine, thiophene, bithiophene, terthiophene, thiadiazole, spirofluorene, stilbene, benzothiophene, dibenzothiophene, benzothiazole, and thiophene pyrrolopyrrolidione. The anchoring groups include, for example, but are not limited to, one or more of phosphonic acid, carboxylic acid, trimethoxysilane, triethoxysilane, trichlorosilane, mercapto group, primary amine, secondary amine, hydroxamic acid group, sulfonic acid group, pyridine, and isocyanate group.

[0072] Optionally, the SAM contained in the SAM hole transport layer 120 includes, but is not limited to, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethoxy-9H-carbazol-9-yl)hexyl]phosphonic acid, [2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethyl-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-dimethyl-9H-carbazol-9-yl)methyl]phosphonic acid, [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid, [8-(3,6-dimethyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(9H-carbazol-9-yl)methyl]phosphonic acid, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid, [3-(9H-carbazol-9-yl)propyl]phosphonic acid, [4-(9H-carbazol-9-yl)butyl]phosphonic acid, [6-(9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(9H-carbazol-9-yl)octyl]phosphonic acid, [4-(N,N-bis(4-methoxyphenylamino)phenyl)propyl]phosphonic acid, 2,3,4,5,6-pentafluorobenzylphosphonic acid, [2-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)ethyl]phosphonic acid, [4-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)butyl]phosphonic acid, [4-(diphenylamino)phenyl)ethyl]phosphonic acid, [4-(diphenylamino)phenyl)propyl]phosphonic acid, [4-(10H-phenothiazin-10-yl)butyl]phosphonic acid, [2-(7H-dibenzocarbazol-7-yl)ethyl]phosphonic acid, [4-(7H-dibenzocarbazol-7-yl)butyl]phosphonic acid, [3-(3,6-dibromo-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-dibromo-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-di-tert-butyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-di-tert-butyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-di-tert-butyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-di-tert-butyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-di-tert-butyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-di-tert-butyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(3,6-diphenyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-diphenyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-diphenyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,One or more of [6-(diphenyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-diphenyl-9H-carbazol-9-yl)octyl]phosphonic acid, [2-(10H-phenoxazin-10-yl)ethyl]phosphonic acid, [4-(3,7-dibromo-10H-phenothiazin-10-yl)butyl]phosphonic acid, and [4-(3,7-dibromo-10H-phenoxazin-10-yl)butyl]phosphonic acid.,

[0073] Optionally, the material of the substrate 110 can be, for example, but not limited to, a conductive metal oxide. The conductive metal oxide is, for example, one or more of oxides such as indium tin oxide, aluminum-doped zinc oxide, indium-doped zinc oxide, fluorine-doped tin oxide, indium tungsten oxide, indium cerium oxide, etc. The substrate 110 can also include a bottom cell, and the bottom cell is, for example, a crystalline silicon cell, a perovskite cell, etc.

[0074] Optionally, the material of the electrode layer 150 can be, for example, but not limited to, a metal, a conductive metal oxide, a conductive polymer, etc.

[0075] The chemical formula of the perovskite material contained in the perovskite light-absorbing layer 140 is ABX3. Among them, A is a monovalent cation, including but not limited to one or more of cesium ion, rubidium ion, potassium ion, methylamine ion, formamidine ion, methylenediamine ion, benzamidine cation, and guanidine cation. B is a divalent cation, including but not limited to one or more of lead ion, copper ion, zinc ion, gallium ion, tin ion, and calcium ion. X is a monovalent anion, including but not limited to one or more of fluoride ion, chloride ion, bromide ion, iodide ion, thiocyanate ion, tetrafluoroborate ion, hexafluorophosphate ion, formate ion, and acetate ion.

[0076] As Figure 3 shown, in some of the examples, the solar cell 100 further includes an electron transport layer 160. The electron transport layer 160 is disposed between the perovskite light-absorbing layer 140 and the electrode layer 150.

[0077] Optionally, the material of the electron transport layer 160 is, for example, but not limited to, one or more of zinc oxide, tin oxide, titanium dioxide, tungsten trioxide, niobium pentoxide, cadmium sulfide, cadmium selenide, fullerene and its derivatives.

[0078] As Figure 3 shown, in some of the examples, the solar cell 100 further includes a buffer layer 170. The buffer layer 170 is disposed between the electron transport layer 160 and the electrode layer 150.

[0079] Optionally, the material of the buffer layer 170 is, for example, but not limited to 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), tin oxide (SnO x ) etc.

[0080] The above-mentioned solar cell 100 can be a single-junction cell or a tandem cell. The tandem cell can be a full perovskite tandem cell, or a perovskite / silicon tandem cell, a perovskite / organic tandem cell, a perovskite / CIGS tandem cell, a perovskite / CdTe tandem cell, a perovskite / GaAs tandem cell, etc.

[0081] Furthermore, the present invention also provides a method for manufacturing the solar cell 100 according to any one of the above examples.

[0082] As Figure 4 shown, the method for manufacturing the solar cell 100 in one embodiment includes the following steps:

[0083] Step S1: Provide a substrate 110.

[0084] Step S2: Prepare a SAM hole transport layer 120 on the substrate 110.

[0085] Step S3: Prepare a silane coupling agent layer 130 on the SAM hole transport layer 120.

[0086] Step S4: Prepare a perovskite light-absorbing layer 140 on the silane coupling agent layer 130.

[0087] Step S5: Prepare an electrode layer 150 on the perovskite light-absorbing layer 140.

[0088] In some examples, the step of preparing the SAM hole transport layer 120 (step S2) includes:

[0089] Step S21: Take the SAM material and dissolve it in a solvent to obtain a SAM solution.

[0090] Step S22: Coat the SAM solution on the substrate 110.

[0091] Step S23: Dry to form the SAM hole transport layer 120.

[0092] In some examples, the step of preparing the silane coupling agent layer 130 (step S3) includes:

[0093] Step S31: Take the silane coupling agent and dissolve it in a solvent to obtain a silane coupling agent solution.

[0094] Step S32: Coat the silane coupling agent solution on the SAM hole transport layer 120.

[0095] Step S33: After coating the silane coupling agent solution, perform a heat treatment to form the silane coupling agent layer 130.

[0096] In step S31, the solvent can be, but is not limited to, alcohol solvents such as isopropyl alcohol and ethanol.

[0097] In some of these examples, in step S31, the concentration of the silane coupling agent solution is 0.1 mg / mL to 5 mg / mL. When the concentration of the silane coupling agent solution is within this range, it is beneficial to make the coating uniform and provide effective protection. Further, in some of these examples, the concentration of the silane coupling agent solution is 1 mg / mL to 4 mg / mL. In some specific examples, the concentration of the silane coupling agent solution is, for example, 0.1 mg / mL, 0.5 mg / mL, 1 mg / mL, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, 5 mg / mL, etc.

[0098] In some of these examples, in step S32, the coating thickness of the silane coupling agent solution is 4 nm to 100 nm. When the coating thickness of the silane coupling agent solution is within this range, it can provide effective protection and reduce the adverse effect on the wettability of the perovskite precursor solution. Further, in some of these examples, the coating thickness of the silane coupling agent solution is 10 nm to 80 nm. In some specific examples, the coating thickness of the silane coupling agent solution is, for example, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0099] In step S32, the coating process of the silane coupling agent solution can be, for example, a spin coating process, a printing process, an inkjet printing process, a doctor blade coating process, a printing process, a dip coating process, an immersion process, a spraying process, a roll coating process, a casting process, a slot die coating process, a bar coating process, etc. The above coating processes are simple and easy to implement, which helps the large-scale application of the technology.

[0100] In some of these examples, the coating process of the silane coupling agent solution is a spin coating process, a spraying process, a doctor blade coating process, a slot die coating process or an inkjet printing process. The above coating processes are beneficial to uniformly coat the silane coupling agent solution on the SAM surface to form a uniform thin film.

[0101] In step S33, by heating the battery coated with the silane coupling agent solution, it is possible to promote the formation of chemical bonds between the silane molecules and the SAM surface, improve the bonding force, and enhance the stability and protection effect of the coating.

[0102] In some of these examples, in step S33, the temperature of the heat treatment is 50 °C to 80 °C. Further, in some of these examples, the temperature of the heat treatment is 60 °C to 80 °C. In some specific examples, the temperature of the heat treatment is, for example, 50 °C, 55 °C, 60 °C, 65 °C, 70 °C, 75 °C, 80 °C, etc., or the range between any two of the above values.

[0103] In some of these examples, in step S33, the heating treatment time is 10 min to 20 min. Further, in some of these examples, the heating treatment time is 12 min to 18 min. In some specific examples, the heating treatment time is, for example, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, etc.

[0104] In some of these examples, before the step of preparing the electrode layer 150 (step S5), the method for preparing the solar cell 100 includes the following steps:

[0105] Prepare an electron transport layer 160 on the perovskite light-absorbing layer 140.

[0106] The above solar cell 100 and its preparation method set a silane coupling agent layer 130 on the SAM hole transport layer 120, and can obtain the following technical effects:

[0107] Improve the stability of the SAM hole transport layer 120: The silane coupling agent layer 130 can protect the SAM hole transport layer 120 from the influence of water vapor, oxygen and pollutants, so that the SAM will not undergo obvious molecular rearrangement or hydrolysis reaction during long-term storage, delaying the degradation of the SAM and maintaining the stability of its surface performance, thereby preventing the performance of the solar cell 100 from decreasing.

[0108] Enhance the interfacial binding force: The silane coupling agent forms strong covalent bonds or hydrogen bonds through chemical reactions or physical interactions between the silanol groups generated by the hydrolysis of its silicon-oxygen-alkyl groups and the anchoring groups or other functional groups such as the phosphonic acid groups of the SAM, enhancing the stability of the SAM hole transport layer 120. Through this reaction, the silane coupling agent not only provides surface protection, but also interacts with the SAM hole transport layer 120 through its molecular structure, improving the interfacial binding force, thereby effectively preventing hydrolysis, rearrangement or reaction with pollutants in the air on the SAM surface, and improving the long-term stability of the solar cell 100.

[0109] Delay the decline of battery efficiency: The silane coupling agent layer 130 can improve the uniformity and stability of the deposition of the perovskite light-absorbing layer 140, delaying the decline of battery efficiency caused by the failure or degradation of the SAM hole transport layer 120. This technology helps to improve the photoelectric conversion efficiency of the perovskite solar cell 100 and extend its service life.

[0110] Further, the present invention also provides a photovoltaic module.

[0111] A photovoltaic module according to an embodiment includes a first encapsulation component, a second encapsulation component, and the solar cell 100 of any of the above examples or the solar cell 100 prepared by the preparation method of any of the above examples. The solar cell 100 is disposed between the first encapsulation component and the second encapsulation component.

[0112] Specific embodiments are provided below to further illustrate the present invention. The present invention provides the following specific embodiments for better further understanding of the present invention. It is not limited to the following specific embodiments and does not constitute a limitation to the content and protection scope of the present invention.

[0113] Example 1

[0114] The preparation method of the solar cell provided in this example includes the following steps:

[0115] Step 1: Deposit a methanol solution of MeO-2PACz on the cleaned FTO glass, with a concentration of 0.8 mg / mL. The deposition method is spin coating, the rotation speed is 3000 rpm, the spin coating time is 30 s, and after that, anneal at 100 °C for 10 minutes to form a SAM hole transport layer.

[0116] Step 2: Deposit an isopropanol solution of the silane coupling agent triethoxy[4-(trifluoromethyl)phenyl]silane on the SAM hole transport layer, with a concentration of 0.5 mg / mL. The deposition method is spin coating, the rotation speed is 3000 rpm, the spin coating time is 30 s, and after that, anneal at 80 °C for 10 minutes to form a silane coupling agent layer.

[0117] Step 3: Deposit a perovskite precursor solution on the above silane coupling agent layer, where the perovskite component is Cs 0.05 FA 0.95 PbI3, the solvent is DMF and DMSO with a volume ratio of 4:1, the concentration of the perovskite component is 1.5 M, and it contains 30 wt% MACl as an additive. The wet film deposition method is spin coating, the rotation speed is 4000 rpm, the spin coating time is 20 s, and after that, flash evaporate the solvent and anneal at 100 °C for 30 minutes to form a perovskite light-absorbing layer.

[0118] Step 4: Evaporate 20 nm of C 60 on the above perovskite light-absorbing layer to form an electron transport layer.

[0119] Step 5: Evaporate 6 nm of BCP on the above electron transport layer to form a buffer layer.

[0120] Step 6: Evaporate 80 nm of Cu on the above buffer layer to form an electrode layer, completing the device preparation.

[0121] Example 2

[0122] The preparation method of the solar cell provided in this embodiment is basically the same as that in Embodiment 1, except that in Step 2, the silane coupling agent is trimethoxy(2-phenylethyl)silane.

[0123] Embodiment 3

[0124] The preparation method of the solar cell provided in this embodiment is basically the same as that in Embodiment 1, except that in Step 2, the silane coupling agent is triethoxyphenylsilane.

[0125] Comparative Example 1

[0126] The preparation method of the solar cell provided in this comparative example is basically the same as that in Embodiment 1, except that the silane coupling agent layer is not prepared, that is, Step 2 is not carried out.

[0127] In each of the above embodiments, multiple groups of cells are prepared respectively. The difference between different groups of cells is the interval time between the completion of the preparation of the silane coupling agent layer and the start of depositing the perovskite light-absorbing layer, which are 12h, 24h, 36h, 48h, 60h, and 72h respectively. In Comparative Example 1, multiple groups of cells are also prepared. The difference between different groups of cells is the interval time between the completion of the preparation of the SAM hole transport layer and the start of depositing the perovskite light-absorbing layer, which are 12h, 24h, 36h, 48h, 60h, and 72h respectively.

[0128] The photoelectric conversion efficiency of each group of cells is tested, and the test results are shown in Table 1.

[0129] Table 1

[0130]

[0131] It can be seen from the experimental results of Comparative Example 1 that before preparing the perovskite light-absorbing layer, the longer the storage time of the device with the SAM hole transport layer deposited, the lower the conversion efficiency of the solar cell. It can be seen from the experimental results of Embodiments 1 to 3 that by providing a silane coupling agent layer on the SAM hole transport layer to protect the SAM hole transport layer, the decrease in the conversion efficiency of the solar cell can be prevented.

[0132] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0133] The above-described embodiments merely represent several implementation manners of the present invention. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all fall within the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A solar cell, characterized in that, Comprising: Substrate; SAM hole transport layer, disposed on the substrate; Silane coupling agent layer, disposed on the SAM hole transport layer; Perovskite light-absorbing layer, disposed on the silane coupling agent layer; And Electrode layer, disposed on the perovskite light-absorbing layer.

2. The solar cell according to claim 1, wherein The silane coupling agent contained in the silane coupling agent layer includes one or more of fluorosilane, aminosilane, epoxy silane, mercapto silane, vinyl silane, methyl silane, phenyl silane, and aldehyde silane.

3. The solar cell according to claim 2, characterized in that, The fluorosilane includes one or more of 3,3,3-trifluoropropylsilane, perfluoroalkylsilane, fluorophenylsilane, fluoroalkoxysilane, and fluoroaminosilane. The aminosilane includes one or more of γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminomethyltriethoxysilane, and p-aminophenyltriethoxysilane. The epoxy silane includes one or more of γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltriethoxysilane, epoxy methyltrimethoxysilane, and bis(3,4-epoxycyclohexyl)ethyl dimethoxysilane. The mercapto silane includes one or more of γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and mercaptoethyltrimethoxysilane. The vinyl silane includes one or more of vinyltrimethoxysilane, vinyltriethoxysilane, and vinyldimethoxyethoxysilane. The methyl silane includes one or more of methyltrimethoxysilane, dimethyldiethoxysilane, and trimethylmethoxysilane. The phenyl silane includes one or more of phenyltriethoxysilane, phenyltrimethoxysilane, and diphenyldimethoxysilane. The aldehyde silane includes one or more of aldehydepropyltrimethoxysilane, aldehydeethyltrimethoxysilane, and p-formylphenyltriethoxysilane.

4. The solar cell according to any one of claims 1 to 3, characterized in that The SAM contained in the SAM hole transport layer includes a hole transport functional group and an anchoring group connected to the hole transport functional group. The hole transport functional group includes one or more of carbazole, triphenylamine, diphenylamine, thiophene, bithiophene, tetrathiophene, thiadiazole, spirofluorene, stilbene, benzothiophene, dibenzothiophene, benzothiazole, and thiophenopyrrolopyrrolidione. The anchoring group includes one or more of phosphonic acid, carboxylic acid, trimethoxysilane, triethoxysilane, trichlorosilane, mercapto group, primary amine, secondary amine, hydroxamic acid group, sulfonic acid group, pyridine, and isocyanate group.

5. The solar cell according to any one of claims 1 to 3, characterized in that, The SAM included in the SAM hole transport layer comprises [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethoxy-9H-carbazol-9-yl)hexyl]phosphonic acid, [2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-dimethyl-9H-carbazol-9-yl)propyl]phosphonic acid, [6-(3,6-dimethyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-dimethyl-9H-carbazol-9-yl)methyl]phosphonic acid, [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid, [8-(3,6-dimethyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(9H-carbazol-9-yl)methyl]phosphonic acid, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid, [3-(9H-carbazol-9-yl)propyl]phosphonic acid, [4-(9H-carbazol-9-yl)butyl]phosphonic acid, [6-(9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(9H-carbazol-9-yl)octyl]phosphonic acid, [4-(N,N-bis(4-methoxyphenylamino)phenyl)propyl]phosphonic acid, 2,3,4,5,6-pentafluorobenzylphosphonic acid, [2-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)ethyl]phosphonic acid, [4-(9H-9'-phenyl-3,3'-bicarbazol-9-yl)butyl]phosphonic acid, [4-(diphenylamino)phenyl)ethyl]phosphonic acid, [4-(diphenylamino)phenyl)propyl]phosphonic acid, [4-(10H-phenothiazin-10-yl)butyl]phosphonic acid, [2-(7H-dibenzocarbazol-7-yl)ethyl]phosphonic acid, [4-(7H-dibenzocarbazol-7-yl)butyl]phosphonic acid, [3-(3,6-dibromo-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-dibromo-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-dibromo-9H-carbazol-9-yl)hexyl]phosphonic acid, [1-(3,6-di-tert-butyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-di-tert-butyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-di-tert-butyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-di-tert-butyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,6-di-tert-butyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-di-tert-butyl-9H-carbazol-9-yl)octyl]phosphonic acid, [1-(3,6-diphenyl-9H-carbazol-9-yl)methyl]phosphonic acid, [2-(3,6-diphenyl-9H-carbazol-9-yl)ethyl]phosphonic acid, [3-(3,6-diphenyl-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazol-9-yl)butyl]phosphonic acid, [6-(3,One or more of [6-(3,6-diphenyl-9H-carbazol-9-yl)hexyl]phosphonic acid, [8-(3,6-diphenyl-9H-carbazol-9-yl)octyl]phosphonic acid, [2-(10H-phenoxazin-10-yl)ethyl]phosphonic acid, [4-(3,7-dibromo-10H-phenothiazin-10-yl)butyl]phosphonic acid, and [4-(3,7-dibromo-10H-phenoxazin-10-yl)butyl]phosphonic acid., 6. A method for preparing a solar cell, characterized in that, Including the following steps: Providing a substrate; Preparing a SAM hole transport layer on the substrate; Preparing a silane coupling agent layer on the SAM hole transport layer; Preparing a perovskite light-absorbing layer on the silane coupling agent layer; And Preparing an electrode layer on the perovskite light-absorbing layer.

7. The method for preparing a solar cell according to claim 6, wherein The step of preparing the silane coupling agent layer includes: Taking a silane coupling agent and dissolving it in a solvent to obtain a silane coupling agent solution; Coat the SAM hole transport layer with the silane coupling agent solution; After coating the silane coupling agent solution, perform a heat treatment to form the silane coupling agent layer.

8. The manufacturing method of the solar cell according to claim 7, characterized in that, The preparation method conforms to at least one of the following features (1) to (3): (1) The concentration of the silane coupling agent solution is 0.1 mg / mL to 5 mg / mL; (2) The coating thickness of the silane coupling agent solution is 4 nm to 100 nm; (3) The temperature of the heat treatment is 50 °C to 80 °C, and the time is 10 min to 20 min.

9. The manufacturing method of the solar cell according to any one of claims 6 to 8, characterized in that, The preparation method conforms to at least one of the following features (1) to (2): (1) The silane coupling agent contained in the silane coupling agent layer includes one or more of fluorosilane, aminosilane, epoxy silane, mercapto silane, vinyl silane, methyl silane, phenyl silane, and aldehyde silane; (2) The SAM contained in the SAM hole transport layer includes a hole transport functional group and an anchoring group connected to the hole transport functional group. The hole transport functional group includes one or more of carbazole, triphenylamine, diphenylamine, thiophene, bithiophene, tetrathiophene, thiadiazole, spirofluorene, stilbene, benzothiophene, dibenzothiophene, benzothiazole, and thiophenopyrrolopyrrole dione. The anchoring group includes one or more of phosphonic acid, carboxylic acid, trimethoxysilane, triethoxysilane, trichlorosilane, mercapto group, primary amine, secondary amine, hydroxamic acid group, sulfonic acid group, pyridine, and isocyanate group.

10. A photovoltaic module, characterized in that, Comprising a first encapsulation component, a second encapsulation component, and the solar cell according to any one of claims 1 to 5 or the solar cell prepared by the preparation method according to any one of claims 6 to 9, wherein the solar cell is disposed between the first encapsulation component and the second encapsulation component.

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