Vertical cavity surface emitting laser lamp and preparation method thereof

Abstract

The present invention relates to the field of semiconductor manufacturing technology, solves the problem of low luminous efficiency of laser lamps manufactured by existing laser lamp manufacturing technology, and provides a vertical cavity surface emitting laser lamp and its preparation method. The method comprises: performing a flatness optimization process on a cleaned substrate; alternately depositing material layers on the surface of the substrate to form a first reflection unit, the first reflection unit including a first material layer and a second material layer; depositing a second reflection unit on the surface of the substrate; depositing a first strain compensation layer between the first reflection unit and the quantum well layer, and depositing a second strain compensation layer between the second reflection unit and the quantum well layer to obtain a light-emitting chip; covering the light-emitting side surface of the light-emitting chip with an encapsulation layer, and bonding the light-emitting chip to the substrate; bonding the substrate to the base to obtain each laser lamp bead; and post-processing each laser lamp bead to obtain a vertical cavity surface emitting laser lamp. The present invention improves the luminous efficiency of the laser lamp bead.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a vertical cavity surface emitting laser lamp and a preparation method thereof. Background Art

[0002] A vertical-cavity surface-emitting laser (VCSEL) is a semiconductor-based laser characterized by emitting light perpendicular to the plane of its optical resonant cavity. VCSELs offer advantages such as high efficiency, low power consumption, compact size, and integration, making them widely used in fields such as communications, sensing, and lighting. By adjusting the design of the quantum well layer, VCSELs can precisely control their emission wavelength to meet diverse application requirements. Compared to traditional edge-emitting lasers, VCSELs offer greater scalability and cost-effectiveness in production.

[0003] Most existing laser lamp beads utilize traditional edge-emitting laser technology, which typically requires multiple manufacturing steps on complex structures. This not only increases production complexity but also easily leads to thermal management issues during the packaging process, preventing them from achieving their full efficiency. Furthermore, strain compensation issues between the reflective unit and quantum well layer during traditional laser lamp bead manufacturing can lead to low light output efficiency, poor stability, and even light attenuation.

[0004] Existing laser lamp manufacturing technologies suffer from low efficiency and poor reliability, primarily manifested in insufficient laser output power, difficult temperature management, and unstable performance under high loads. Traditional techniques, such as reflector design, strain compensation in quantum well layers, and the bonding between substrate and base, all negatively impact the overall performance of the laser.

[0005] Therefore, how to improve the luminous efficiency and reliability of vertical cavity surface emitting laser lamps is an urgent problem to be solved. Summary of the Invention

[0006] In view of this, the present invention provides a vertical cavity surface emitting laser lamp and a preparation method thereof, so as to solve the problem of low luminous efficiency of laser lamps manufactured by existing laser lamp manufacturing technology.

[0007] The technical solution adopted in the present invention is:

[0008] In a first aspect, the present invention provides a vertical cavity surface emitting laser lamp, comprising:

[0009] Several laser lamp beads, wherein the laser lamp beads include an encapsulation layer, a light-emitting chip, a substrate, and a base, the encapsulation layer covering the light-emitting side surface of the light-emitting chip, the light-emitting chip bonded to the upper surface of the substrate, and the lower surface of the substrate connected to the base via a bonding layer;

[0010] The light emitting chip includes a first reflection unit, a first strain compensation layer, a quantum well layer, a second strain compensation layer and a second reflection unit;

[0011] The second reflecting unit and the first reflecting unit form a symmetrical resonant cavity;

[0012] The first strain compensation layer and the second strain compensation layer are used to perform strain compensation on the quantum well layer, and the first strain compensation layer and the second strain compensation layer are distributed in a mirror-symmetrical manner with the quantum well layer as the center;

[0013] The quantum well layer generates a light field with a target wavelength through stimulated emission;

[0014] The first reflecting unit includes a plurality of alternately stacked first material layers having a first refractive index and second material layers having a second refractive index, the first material layer having a first physical thickness, the second material layer having a second physical thickness, the first refractive index being greater than the second refractive index, the first physical thickness being less than the second physical thickness, and the first material layer and the second material layer having the same optical thickness that causes the light field having the target wavelength to produce constructive interference.

[0015] Preferably, the encapsulation layer comprises a first encapsulation layer and a second encapsulation layer sequentially arranged along the optical axis direction of the light-emitting chip;

[0016] The first packaging layer includes two layers of elastic packaging medium, and the outer surface of the elastic packaging medium has a continuous smooth optical interface for constraining the light beam divergence angle to a preset angle range;

[0017] The second encapsulation layer covers the outer side of the first encapsulation layer and includes a thermosetting polymer. The thermosetting polymer and the first encapsulation layer are chemically bonded through an interface modification layer. The interface modification layer includes a silane coupling agent or a dense transition zone formed by plasma activation treatment.

[0018] Preferably, the laser lamp bead further includes a thermal management unit;

[0019] The thermal management unit includes a composite thermal buffer layer provided between the light emitting chip and the substrate;

[0020] The composite thermal buffer layer is composed of alternating layers of thermal conductive material layers and phase change energy storage media, wherein the thermal conductive material layers include a single layer or multiple layers of carbon-based nanomaterials, the phase change energy storage medium includes a phase change material, and the interlayer interface between the thermal conductive material layer and the phase change energy storage medium is connected by chemical bonding or physical adsorption.

[0021] Preferably, the substrate is an insulating ceramic matrix, comprising a ceramic material layer and a surface composite metallization layer, wherein the surface composite metallization layer is formed by a composite of a thermally conductive metal and a stress buffer alloy;

[0022] The base includes an insulating support substrate and a conductive channel array, wherein the insulating support substrate includes an organic polymer material or an inorganic ceramic material, a grating structure having a target period corresponding to the target wavelength is integrated on the surface of the insulating support substrate, and the conductive channel array includes a noble metal conductive layer and a vertical interconnection structure;

[0023] The substrate and the base are connected via a bonding layer, and the bonding layer includes a metal alloy phase and a ceramic polymer composite phase.

[0024] In a second aspect, the present invention provides a method for preparing a vertical cavity surface emitting laser lamp, which is used to prepare the vertical cavity surface emitting laser lamp as described above, and the preparation method comprises:

[0025] Clean the substrate surface and optimize the flatness of the cleaned substrate;

[0026] Alternately depositing material layers on the surface of the substrate to form the first reflecting unit, wherein the first reflecting unit includes a first material layer having a first physical thickness and a second material layer having a second physical thickness;

[0027] Depositing the second reflecting unit on the surface of the substrate;

[0028] Depositing the first strain compensation layer between the first reflection unit and the quantum well layer, and depositing the second strain compensation layer between the second reflection unit and the quantum well layer, to obtain the light-emitting chip;

[0029] Covering the light-emitting side surface of the light-emitting chip with the encapsulation layer, and bonding and fixing the light-emitting chip to the substrate after the flatness optimization treatment;

[0030] Bonding the substrate and the base to obtain the laser lamp beads;

[0031] Post-processing is performed on each of the laser lamp beads to obtain the vertical cavity surface emitting laser lamp.

[0032] Preferably, the alternately depositing material layers on the surface of the substrate to form the first reflective unit comprises:

[0033] Calculating the first physical thickness according to the first refractive index and the target wavelength;

[0034] Calculating the second physical thickness according to the second refractive index and the target wavelength;

[0035] According to the first physical thickness and the second physical thickness, in combination with a preset deposition rate, alternately depositing the first material layer and the second material layer on the substrate surface, and obtaining and verifying a first optical thickness of the first material layer and a second optical thickness of the second material layer;

[0036] When it is verified that the first optical thickness reaches a preset target thickness corresponding to the target wavelength and the second optical thickness reaches the preset target thickness, the deposition of the periodic material layer is completed;

[0037] According to the preset number of periodic material layers to be deposited, the deposition of the periodic material layers is repeated until the alternating deposition of all periodic material layers is completed, thereby obtaining the first reflective unit.

[0038] Preferably, the first strain compensation layer is deposited between the first reflective unit and the quantum well layer, and the second strain compensation layer is deposited between the second reflective unit and the quantum well layer, to obtain the light-emitting chip, comprising:

[0039] Obtaining a preset target component ratio of a multi-component compound material for strain compensation according to a first lattice constant corresponding to the first reflective unit material and a second lattice constant corresponding to the quantum well layer material;

[0040] According to the target component ratio, obtaining corresponding target deposition control parameters, wherein the target deposition control parameters include a target temperature and a target pressure;

[0041] depositing the multi-component compound material between the first reflective unit and the quantum well layer according to the target deposition control parameters to obtain the first strain compensation layer;

[0042] The multi-component compound material is deposited between the second reflective unit and the quantum well layer according to the target deposition control parameter to obtain the second strain compensation layer.

[0043] Preferably, obtaining a preset target component ratio of the multi-component material for strain compensation according to a first lattice constant corresponding to the first reflective unit material and a second lattice constant corresponding to the quantum well layer material includes:

[0044] Calculating a lattice constant difference according to the first lattice constant and the second lattice constant;

[0045] Obtaining a target lattice constant range corresponding to the strain compensation requirement according to the lattice constant difference;

[0046] According to the physical and chemical properties of multi-component compound materials and combined with Wieger's law, the objective function relationship between the lattice constant and the proportion of material components is established;

[0047] Calculating a component ratio range of a multi-component compound material according to the target lattice constant range and the target function relationship;

[0048] According to the component ratio range, combined with preset optimization target parameters, multi-objective optimization processing is performed on the component ratio of the multi-component compound material to obtain the target component ratio, wherein the optimization target parameters include lattice constant matching, band gap width and electron mobility.

[0049] Preferably, the component ratio of the multi-component compound material is subjected to multi-objective optimization processing based on the component ratio interval and in combination with preset optimization target parameters to obtain the target component ratio, which includes:

[0050] According to the component ratio range, constructing a component optimization objective function with the lattice constant matching, band gap width and electron mobility as optimization targets;

[0051] According to the component ratio interval and the component optimization objective function, setting optimization constraints on the component ratio to obtain a component decomposition space;

[0052] According to the group decomposition space, a global search optimization is performed on the component optimization objective function to obtain a preliminary optimized component set;

[0053] According to the preliminary optimized component set, performing local iterative convergence processing on the component optimization objective function to obtain a converged optimized component set;

[0054] According to the converged optimized component set, sensitivity analysis and performance evaluation are performed on the component ratio to obtain the target component ratio.

[0055] Preferably, obtaining corresponding target deposition control parameters according to the target component ratio includes:

[0056] Acquiring initial deposition control parameters corresponding to the multi-component compound material, wherein the initial deposition control parameters include initial temperature and initial pressure;

[0057] According to the multi-component compound material, obtaining a first sensitivity of each component in the multi-component compound material to temperature and a second sensitivity of each component to pressure;

[0058] determining a first temperature adjustment coefficient based on each of the first sensitivities and in combination with the target component ratio;

[0059] determining a second adjustment coefficient of pressure according to each of the second sensitivities in combination with the target component ratio;

[0060] The initial deposition control parameter is adjusted according to the first adjustment coefficient and the second adjustment coefficient to obtain the target deposition control parameter.

[0061] In summary, the beneficial effects of the present invention are as follows:

[0062] The present invention provides a vertical cavity surface emitting laser lamp and a preparation method thereof, the method comprising: cleaning the surface of a substrate and performing a flatness optimization treatment on the cleaned substrate; alternately depositing material layers on the surface of the substrate to form a first reflection unit, wherein the first reflection unit comprises a first material layer having a first physical thickness and a second material layer having a second physical thickness; depositing the second reflection unit on the surface of the substrate; depositing the first strain compensation layer between the first reflection unit and the quantum well layer, and depositing the second strain compensation layer between the second reflection unit and the quantum well layer to obtain the light-emitting chip; covering the light-emitting side surface of the light-emitting chip with the encapsulation layer, and bonding the light-emitting chip to the substrate after the flatness optimization treatment; bonding the substrate to the base to obtain each of the laser lamp beads; and post-processing each of the laser lamp beads to obtain the vertical cavity surface emitting laser lamp. First, by cleaning the substrate surface and optimizing its flatness, the present invention ensures good adhesion and stability of the laser chip, thus avoiding low light output efficiency due to substrate unevenness. Second, by alternately depositing material layers on the substrate surface to form reflective units with precise physical thicknesses and performing strain compensation on the quantum well layer, the carrier confinement effect is optimized, improving light generation efficiency and wavelength stability. Furthermore, by depositing a second reflective unit in a symmetrical resonant cavity, the reflection efficiency of the light field is enhanced, increasing the overall light output power. Finally, by covering the light-emitting chip with an encapsulation layer and performing precise substrate-to-base bonding, the stability and long-term reliability of the laser lamp beads are ensured, thereby effectively improving the luminous efficiency and operating life of the laser lamp beads, and solving the problems of low efficiency and poor reliability commonly found in traditional technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work, and these are all within the scope of protection of the present invention.

[0064] Figure 1 This is a schematic diagram of the structure of the internal functional layers of the light-emitting chip in the vertical cavity surface emitting laser lamp in Example 1 of the present invention;

[0065] Figure 2A schematic diagram of the overall working process of the vertical cavity surface emitting laser lamp and the preparation method thereof in Example 2 of the present invention;

[0066] Figure 3 This is a schematic diagram of a process for alternately depositing material layers on the substrate surface to form the first reflective unit in Example 2 of the present invention;

[0067] Figure 4 This is a schematic diagram of the process of depositing the first strain compensation layer between the first reflective unit and the quantum well layer, and depositing the second strain compensation layer between the second reflective unit and the quantum well layer in Example 2 of the present invention;

[0068] Figure 5 Schematic diagram of a process for obtaining a preset target component ratio of a multi-component compound material for strain compensation in Example 2 of the present invention;

[0069] Figure 6 This is a schematic diagram of a process for performing multi-objective optimization on the component ratios of a multi-component compound material in Example 2 of the present invention;

[0070] Figure 7 Schematic diagram of a process for obtaining corresponding target deposition control parameters according to the target component ratio in Example 2 of the present invention;

[0071] The numbers in the figure are as follows:

[0072] 11 - first reflection unit; 12 - second reflection unit; 21 - first strain compensation layer; 22 - second strain compensation layer; 3 - quantum well layer. DETAILED DESCRIPTION

[0073] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be noted that, in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. In the description of the present invention, it should be understood that the orientation or position relationship indicated by the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further limitations, elements defined by the phrase "comprising..." do not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising the elements. The embodiments of the present invention and the features thereof may be combined with each other if there is no conflict, and all are within the scope of protection of the present invention.

[0074] Example 1

[0075] Embodiment 1 of the present invention discloses a vertical cavity surface emitting laser lamp, comprising:

[0076] Several laser lamp beads, wherein the laser lamp beads include an encapsulation layer, a light-emitting chip, a substrate, and a base, the encapsulation layer covering the light-emitting side surface of the light-emitting chip, the light-emitting chip bonded to the upper surface of the substrate, and the lower surface of the substrate connected to the base via a bonding layer;

[0077] The light emitting chip includes a first reflection unit, a first strain compensation layer, a quantum well layer, a second strain compensation layer and a second reflection unit;

[0078] The second reflecting unit and the first reflecting unit form a symmetrical resonant cavity;

[0079] The first strain compensation layer and the second strain compensation layer are used to perform strain compensation on the quantum well layer, and the first strain compensation layer and the second strain compensation layer are distributed in a mirror-symmetrical manner with the quantum well layer as the center;

[0080] The quantum well layer generates a light field with a target wavelength through stimulated emission;

[0081] The first reflecting unit includes a plurality of alternately stacked first material layers having a first refractive index and second material layers having a second refractive index, the first material layers having a first physical thickness, the second material layers having a second physical thickness, the first refractive index being greater than the second refractive index, the first physical thickness being less than the second physical thickness, and the first material layers and the second material layers having the same optical thickness such that the light field having the target wavelength generates constructive interference;

[0082] Specifically, a vertical cavity surface emitting laser, or VCSEL, is a semiconductor laser whose light beam is emitted perpendicular to the surface of the chip. Compared with traditional edge-emitting lasers, its vertical light-emitting structure helps to achieve arrayed, miniaturized and high-power-density light source design, and is widely used in 3D sensing, optical communications, laser lighting and other fields. The first reflecting unit and the second reflecting unit are usually composed of several optical medium layers. Through the difference in refractive index and specific thickness design, light of a specific wavelength interferes between the layers to form a high-reflectivity Bragg reflector, or DBR, to provide the required optical feedback to maintain laser oscillation. The quantum well layer is composed of multiple quantum wells (MQW) or single quantum wells (SQW), which forms a laser emission source area by limiting the recombination of electrons and holes in a specific area and generating stimulated radiation under external electrical or optical excitation.

[0083] Specifically, the light-emitting chip is a VCSEL chip structure, and the chip body is fixed to the upper surface of the substrate by bonding, with its light-emitting surface facing upward and emitting light vertically. Figure 1As shown, the chip comprises the following five functional layers: a first reflective unit 11, or upper DBR mirror; a first strain-compensating layer 21; a quantum well layer 3, or gain region, comprising multiple quantum wells; a second strain-compensating layer 22; and a second reflective unit 12, or lower DBR mirror. These three layers together form an optical resonant cavity for laser mode selection and output. The first and second strain-compensating layers are used to strain-compensate the quantum well layer. They are arranged in mirror-symmetric fashion around the quantum well layer. The first reflective unit 11 is an upper reflective mirror structure, comprising a plurality of alternating layers of a first material layer (e.g., GaAs, AlGaAs) with a first refractive index and a second material layer (e.g., AlAs) with a second refractive index. The first material layer has a first physical thickness, while the second material layer has a second physical thickness. The first refractive index is greater than the second refractive index, and the first physical thickness is less than the second physical thickness. The first and second material layers have the same optical thickness, which allows constructive interference of the light field at the target wavelength. The refractive index difference between the materials ensures Bragg reflection of the light field at the target wavelength, thereby achieving positive feedback within the cavity. The second reflector 12 is symmetrically structured with the first reflector 11 and is located at the bottom of the chip, forming a Fabry-Perot cavity with the first reflector 11. This symmetrical structure ensures stable laser oscillation conditions, a narrow emission spectrum, and strong directionality. The light-emitting chip is mounted on a substrate with excellent thermal conductivity (such as high-thermal-conductivity ceramic) via bonding. The substrate is connected to a metal base via a bonding layer. The base not only dissipates heat but also provides structural support for the laser diode. Precise optical thickness design of the reflector ensures strong constructive interference at the target wavelength, thereby increasing the reflectivity and light field intensity within the resonant cavity, significantly enhancing laser output power and stability. The multi-layer bonding structure (chip-substrate-base) and optimized thermally conductive materials effectively improve the heat dissipation performance of the entire laser diode, extend device life, and enhance the mechanical stability of the package structure. The vertical light emission characteristic of VCSELs makes them naturally suitable for array deployment. They offer excellent uniformity and spatial distribution in projection illumination or 3D imaging, facilitating the fabrication of high-density light source modules. By adjusting the quantum well material or number of layers, and optimizing the cavity length and DBR design, laser output with different central wavelengths can be obtained to meet application scenarios with different color temperature or spectral requirements.

[0084] In one embodiment, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer sequentially arranged along the optical axis direction of the light-emitting chip;

[0085] The first packaging layer includes two layers of elastic packaging medium, and the outer surface of the elastic packaging medium has a continuous smooth optical interface for constraining the light beam divergence angle to a preset angle range;

[0086] The second encapsulation layer covers the outer side of the first encapsulation layer and includes a thermosetting polymer. The thermosetting polymer and the first encapsulation layer are chemically bonded through an interface modification layer. The interface modification layer includes a silane coupling agent or a dense transition zone formed by plasma activation treatment.

[0087] Specifically, the encapsulation layer comprises a first and second encapsulation layer, arranged sequentially along the optical axis of the light-emitting chip. The first encapsulation layer comprises two layers of an elastic encapsulation medium, such as silicone, whose outer surface is precision molded or polished to form a continuous, smooth optical interface. This effectively constrains the divergence angle of the outgoing beam, keeping the laser output beam within a preset narrow angle range of ±8°. This significantly improves beam directionality and light efficiency, making it suitable for high-precision applications such as ranging and 3D recognition. The second encapsulation layer, covering the first encapsulation layer, is made of a thermosetting polymer material with high mechanical strength and chemical stability, such as epoxy resin, enhancing the overall package's resistance to moisture and salt spray. The second encapsulation layer is securely bonded to the first encapsulation layer via an interface modification layer. This interface modification layer can be treated with a silane coupling agent to form chemical bonds or activated by plasma to form a dense energy-level matching transition zone, ensuring interlayer adhesion and improving the package's sealing and long-term stability. The dual-layer silicone + epoxy encapsulation structure, coupled with IP68 protection requirements, significantly enhances the VCSEL's reliable operation and optical output consistency in complex environments.

[0088] In one embodiment, the laser lamp bead further includes a thermal management unit;

[0089] The thermal management unit includes a composite thermal buffer layer provided between the light emitting chip and the substrate;

[0090] The composite thermal buffer layer is composed of alternating layers of thermal conductive material layers and phase change energy storage media, wherein the thermal conductive material layers include a single layer or multiple layers of carbon-based nanomaterials, the phase change energy storage medium includes a phase change material, and the interlayer interface between the thermal conductive material layer and the phase change energy storage medium is connected by chemical bonding or physical adsorption.

[0091] Specifically, to effectively manage the heat generated by VCSEL chips in high-power continuous or pulsed operating modes and further improve the device's thermal stability and service life, a thermal management unit is designed. This thermal management unit includes a composite thermal buffer layer located between the light-emitting chip and the substrate. This thermal buffer layer utilizes a composite structure consisting of alternating layers of thermally conductive material and phase-change energy storage medium. The thermally conductive material layer is constructed from single or multiple layers of carbon-based nanomaterials, such as graphene or carbon nanotubes, which have extremely high in-plane thermal conductivity and can rapidly diffuse the instantaneous heat generated by the chip. The phase-change energy storage medium, such as paraffin, PEG, or metal alloy microcapsules, absorbs latent heat when the local temperature rises to the phase transition temperature, smoothing thermal shock and forming a dynamic thermal buffer mechanism that effectively suppresses excessive increases in the chip's junction temperature. The thermally conductive layer and the phase-change layer are securely connected through chemical bonding, such as functional group reactions, or physical adsorption, such as van der Waals forces or interfacial intercalation, to prevent increased interlayer thermal resistance or material delamination. This graphene-PCM composite layer design achieves sub-10ms transient thermal response capability, and can control the thermal rise within 3°C under 10A pulse excitation, greatly improving the reliability and service life of laser lamp beads under high-frequency drive and harsh environments, meeting the needs of industrial-grade applications.

[0092] In one embodiment, the substrate is an insulating ceramic matrix, including a ceramic material layer and a surface composite metallization layer, wherein the surface composite metallization layer is formed by a composite of a thermally conductive metal and a stress buffer alloy;

[0093] The base includes an insulating support substrate and a conductive channel array, wherein the insulating support substrate includes an organic polymer material or an inorganic ceramic material, a grating structure having a target period corresponding to the target wavelength is integrated on the surface of the insulating support substrate, and the conductive channel array includes a noble metal conductive layer and a vertical interconnection structure;

[0094] The substrate and the base are connected via a bonding layer, and the bonding layer includes a metal alloy phase and a ceramic polymer composite phase.

[0095] Specifically, the base includes an insulating support matrix and a conductive channel array, wherein the insulating support matrix can be made of organic polymer materials, such as polyimide PI, LCP, or inorganic ceramic materials with high thermal conductivity and stability, such as , AlN, to meet the high-temperature stability and mechanical strength requirements of the laser. A periodic grating structure that matches the target wavelength of the laser lamp bead, such as 655nm, is integrated on its surface, such as a sub-wavelength structure with a period of about λ / 2. The grating structure can realize mode regulation, direction constraint or polarization control of the emitted laser, thereby improving the beam shaping effect and light output efficiency, and is particularly suitable for 3D sensing and precision lighting scenarios. The conductive channel array includes a high-stability precious metal conductive layer, such as gold, silver or their alloys and a vertical interconnection structure, such as a through-hole filled metal column or a micro-bump array, to achieve a high-conductivity connection between the chip and the external drive circuit to meet high-frequency drive requirements. At the same time, in order to ensure structural stability and coordinated optimization of thermal and electrical properties, the substrate and the base are connected by a multifunctional bonding layer. The bonding layer includes a metal alloy phase, such as Au-Sn, Sn-Ag and a ceramic polymer composite phase, such as an epoxy resin containing ceramic fillers. The composite structure provides reliable mechanical adhesion and a low thermal resistance path on the one hand, and can buffer stress concentration caused by thermal expansion mismatch on the other hand. The technical advantages of the ceramic substrate's thermal conductivity of up to 17W / m·K and the precious metal electrode design yield of 95% have significantly improved the electrothermal stability and optical output consistency of VCSEL laser lamp beads in complex application environments.

[0096] Example 2

[0097] See Figure 2 Embodiment 2 of the present invention further provides a method for preparing a vertical cavity surface emitting laser lamp, which is used to prepare the vertical cavity surface emitting laser lamp as described in embodiment 1. The preparation method includes:

[0098] Clean the substrate surface and optimize the flatness of the cleaned substrate;

[0099] Specifically, in the preparation process of VCSEL chips, the cleaning and flatness treatment of the substrate surface is a basic step to ensure the quality of subsequent deposition. The cleaning process includes multiple steps to remove organic contamination, such as ultrasonic cleaning with acetone and isopropyl alcohol, inorganic contamination, such as pickling or hydrofluoric acid etching, and particulate impurities, rinsing and drying, to minimize deposition defects and impurity introduction. On this basis, in order to ensure the thickness consistency and phase matching of the DBR multilayer film stack, the surface of the cleaned substrate needs to be flattened at the atomic level. Chemical mechanical polishing technology or plasma surface activation treatment can be used to control the surface roughness at the nanometer level to ensure that the subsequent reflector structure has high reflectivity and low scattering loss. This step is a key pre-processing link for achieving high-quality vertical cavity laser structure.

[0100] Alternately depositing material layers on the surface of the substrate to form the first reflecting unit, wherein the first reflecting unit includes a first material layer having a first physical thickness and a second material layer having a second physical thickness;

[0101] Specifically, the first reflective unit is usually an upper DBR mirror structure, which is a key reflective feedback component in the VCSEL vertical cavity. The reflector is formed by alternately depositing materials with high and low refractive indices (such as Al x Ga 1-x As / AlAs or / ), forming a periodic multilayer thin film structure. The first and second physical thicknesses of each material layer are precisely controlled to ensure an optical thickness of λ / 4 at the target wavelength (e.g., 655nm). This creates stable constructive interference between the layers and achieves a high reflectivity of >99%. Deposition methods utilize MOCVD (metal-organic chemical vapor deposition) or ALD (atomic layer deposition) to achieve highly precise thickness control and interface uniformity. This multilayer structure provides a longitudinal feedback channel for intracavity laser oscillation.

[0102] Depositing the second reflecting unit on the surface of the substrate;

[0103] Depositing the first strain compensation layer between the first reflection unit and the quantum well layer, and depositing the second strain compensation layer between the second reflection unit and the quantum well layer, to obtain the light-emitting chip;

[0104] Specifically, the second reflective unit is the lower reflector in the vertical cavity structure, which is used to reflect light back into the cavity and form a resonant cavity structure with the upper reflector. It is usually formed by alternating stacking of high and low refractive index materials, such as / Multi-layer structure. The strain compensation layer is used to regulate the strain accumulation caused by material lattice mismatch, prevent the generation of crystal defects, and maintain the long life and high brightness of the laser. For example, the InGaAsP quaternary compound is used as the strain compensation material to form a buffer zone between it and the quantum well layer (InGaAs) to release stress. Strain compensation layers are arranged on both sides of the quantum well layer to reduce the structural stress caused by the lattice constant difference between the upper and lower mirrors and the quantum well.

[0105] Covering the light-emitting side surface of the light-emitting chip with the encapsulation layer, and bonding and fixing the light-emitting chip to the substrate after the flatness optimization treatment;

[0106] Specifically, after the light-emitting chip structure is completed, an encapsulation layer is applied to the light-emitting surface to improve beam quality and device mechanical stability. This encapsulation layer is preferably a double-layer structure: the first encapsulation layer is made of an elastic optical material (such as silicone) and has a parabolic or smooth interface to shape the beam divergence angle, limiting the emitted light to an angle of ±8°. The second encapsulation layer is an epoxy or other thermosetting polymer, covering the outside of the first layer. Through chemical bonding or plasma activation, it forms a stable structure with the inner layer, enhancing the package protection level. Subsequently, the light-emitting chip is fixed to the surface of a flattened substrate by low-temperature hot-press bonding or metal welding. The substrate can be made of ceramic or composite materials, providing stable support and a heat conduction path, helping to reduce the chip junction temperature and enhance structural strength.

[0107] Bonding the substrate and the base to obtain the laser lamp beads;

[0108] Specifically, the substrate carrying the packaged light-emitting chip is fixed to a functional base using bonding techniques (such as gold-tin alloy eutectic soldering, silver adhesive bonding, nano-gold bonding, etc.). The base has built-in precious metal conductive channels and a periodic grating structure. While providing an electrical connection path, it also regulates the laser emission angle or polarization state through the surface grating. The bonding layer is designed as a composite phase of metal alloy and ceramic polymer, which not only ensures excellent thermal conductivity (meeting the requirements of high-speed heat diffusion) but also buffers the mechanical strain caused by different thermal expansion coefficients through flexible stress regulation, improving the reliability of the bonding interface. After completing this step, a separate and complete laser lamp bead structure is formed.

[0109] Post-processing is performed on each of the laser lamp beads to obtain the vertical cavity surface emitting laser lamp.

[0110] Specifically, each of the aforementioned laser lamp beads is post-processed. The post-processing process of the laser lamp beads mainly includes surface passivation, coating treatment, glue dispensing, package calibration, and electrical and optical performance testing. Surface passivation can reduce performance degradation caused by environmental pollution through plasma coating. Coating treatment can enhance the transmittance of the light-emitting surface and reduce reflection loss. The glue dispensing process is used to strengthen the structural sealing and vibration resistance. And the package calibration ensures the consistency of the light-emitting center of the lamp bead with the external optical system. Finally, the lamp beads are tested for parameters such as voltage-current characteristics, optical power output, spectral characteristics, and luminous angle to screen qualified products. After the above post-processing steps, a highly reliable and efficient vertical cavity surface emitting laser lamp is formed, which is widely used in laser radar, medical beauty, 3D sensing and other fields.

[0111] In one embodiment, see Figure 3 , the alternately depositing material layers on the surface of the substrate to form the first reflective unit includes:

[0112] Based on the first refractive index and the target wavelength, the first physical thickness is calculated;

[0113] Specifically, in order to achieve the condition of constructive interference for a specific wavelength optical field (such as 655 nm) in the distributed Bragg reflector, it is necessary to first accurately calculate its physical thickness according to the first refractive index of the first material layer (for example, a high refractive index material such as or Al x Ga 1- x As) and the target wavelength. According to the optical thickness formula , where n1 represents the first refractive index, the physical thickness d1 of the first material layer is derived as d1 = λ / (4n1), ensuring that this layer in the laser cavity forms an optical path of 1 / 4 wavelength for the target wavelength, thereby achieving strong constructive interference between layers and improving the reflectivity and laser feedback efficiency.

[0114] Based on the second refractive index and the target wavelength, the second physical thickness is calculated;

[0115] Specifically, corresponding to the first material layer, the second material layer is selected as a low refractive index material (such as , AlAs), and it is also necessary to calculate the physical thickness d2 corresponding to its 1 / 4 wavelength according to its second refractive index n2 and the target wavelength λ. Since n2 < n1, the second physical thickness of the second material layer is relatively larger. This alternating stack structure of high / low refractive indices enables an effective interference mirror to be constructed for each period, providing high reflection conditions for laser oscillation.

[0116] Based on the first physical thickness and the second physical thickness, combined with a preset deposition rate, the first material layer and the second material layer are alternately deposited on the surface of the substrate, and the first optical thickness of the first material layer and the second optical thickness of the second material layer are obtained and verified;

[0117] Specifically, after calculating the first physical thickness and the second physical thickness, combined with preset deposition process parameters (such as the deposition rate, temperature control, and layer thickness control accuracy of the MOCVD or ALD system), precise alternate deposition is performed on the surface of the substrate. During the deposition process, it is necessary to monitor and verify in real time the first optical thickness of the first material layer and the second optical thickness of the second material layer (such as through an in-situ ellipsometer or an interferometer), ensuring that the first optical thickness of the first material layer and the second optical thickness of the second material layer are respectively λ / 4 of the target wavelength (i.e., meeting the interference condition), otherwise it may cause the reflection peak to shift or the cavity structure to be detuned, affecting the performance of the laser.

[0118] When it is verified that the first optical thickness reaches a preset target thickness corresponding to the target wavelength and the second optical thickness reaches the preset target thickness, the deposition of the periodic material layer is completed;

[0119] Specifically, only when the optical thicknesses of both layers meet the set value of λ / 4 (with a tolerance generally within ±2%) can the deposition of the material pair for this cycle be considered satisfactory. This verification serves as a key node in closed-loop feedback control, ensuring that no systematic deviations occur during subsequent stacking cycles. Once qualified, the high / low refractive index material layer pair for this cycle is considered deposited, and the conditions for constructing a high-reflectivity DBR mirror are met.

[0120] According to the preset number of periodic material layers to be deposited, the deposition of the periodic material layers is repeated until the alternating deposition of all periodic material layers is completed, thereby obtaining the first reflective unit.

[0121] Specifically, based on the reflectivity requirements of the laser design, 15 to 25 pairs of material layers are deposited, with the exact number of layers determined by theoretical simulations and the target application. The aforementioned thickness calculation, deposition control, and thickness verification procedures are repeated for each deposition cycle to ensure that coherent interference conditions are met for all cycles. Once the set number of cycles is completed, the entire first reflective unit (DBR lower mirror) is constructed, providing a high-quality, low-defect reflective substrate for subsequent quantum well epitaxy and a stable feedback structure for intracavity optical oscillations.

[0122] In one embodiment, see Figure 4 The first strain compensation layer is deposited between the first reflective unit and the quantum well layer, and the second strain compensation layer is deposited between the second reflective unit and the quantum well layer, to obtain the light-emitting chip, comprising:

[0123] Obtaining a preset target component ratio of a multi-component compound material for strain compensation according to a first lattice constant corresponding to the first reflective unit material and a second lattice constant corresponding to the quantum well layer material;

[0124] Specifically, in order to achieve stress neutralization between the upper and lower layers of materials during crystal growth, first, according to the first reflection unit material (such as / The first lattice constant corresponding to the structure) and the second lattice constant of the quantum well layer (such as InGaAs) are used to calculate the lattice mismatch (Δa) between the two. Then, using the Wieger law or experimental fitting formula, a set of multi-component compound materials with adjustable components (such as ) to screen candidate components with adjustable lattice constants. Furthermore, based on the target lattice constant match, combined with multiple weights such as bandgap width and electron mobility, the optimal target component ratio for strain compensation was optimized, providing a material foundation with excellent lattice buffering and conductive properties for the subsequent strain compensation layer.

[0125] In one embodiment, see Figure 5 The step of obtaining a target component ratio of a multi-component material for strain compensation according to a first lattice constant corresponding to the first reflective unit material and a second lattice constant corresponding to the quantum well layer material includes:

[0126] Calculating a lattice constant difference according to the first lattice constant and the second lattice constant;

[0127] Specifically, in order to clarify the reflector material (such as / The lattice mismatch between the alternating DBR structure and the quantum well material (such as InGaAs) is determined. By obtaining the first lattice constant of the first reflector material and the second lattice constant of the quantum well material, the difference between the two is calculated to assess the necessity of introducing a compensation layer. The results of this step provide a quantitative basis for subsequent compensation layer design, avoiding dislocations, interlayer cracking, and optical performance degradation caused by severe lattice mismatch.

[0128] Obtaining a target lattice constant range corresponding to the strain compensation requirement according to the lattice constant difference;

[0129] Specifically, after determining the degree of lattice mismatch based on the lattice constant difference, the target lattice constant range of the material suitable for strain buffering is further determined. This range is generally between the lattice constants of the first reflector material and the quantum well material, and is typically designed with a stepwise gradient or average matching. This ensures an effective transition in the compensation layer during strain modulation, balancing material stability and optical resonance, and is the foundation for achieving high-quality heteroepitaxial growth.

[0130] According to the physical and chemical properties of multi-component compound materials and combined with Wieger's law, the objective function relationship between the lattice constant and the proportion of material components is established;

[0131] Specifically, based on the theoretical foundation of Wieger's law and combined with the actual behavior of multi-component material systems, a functional mapping relationship between lattice constants and component ratios was established, resulting in an objective function relationship. Taking InGaAsP as an example, its lattice constant can be considered as a weighted average of the lattice constants of the four components: In, Ga, As, and P. Furthermore, it is necessary to consider the deviations between the components in the solid solution, such as the temperature expansion coefficient and alloy mixed crystal deviation. By constructing this objective function model, the material lattice constant can be quickly predicted at different component ratios, serving as input for optimization solutions and laying the mathematical foundation for subsequent multi-objective parameter calculations.

[0132] Calculating a component ratio range of a multi-component compound material according to the target lattice constant range and the target function relationship;

[0133] Specifically, by combining the established objective function relationship with the target lattice constant range, a series of material component ratio ranges that meet the constraints of this range are reversely solved. Taking InGaAsP as an example, if the target lattice constant range is 0.515-0.545nm, it may correspond to a set of component ratio solutions with an In content of 30%-40% and a P content of 20%-30%. This solution set constitutes the component ratio range, providing an alternative solution space for the next step of optimization. This step avoids the risk of directly selecting a specific ratio and resulting in uncontrollable material properties, while providing room for operation to balance multiple performance parameters (such as band gap and conductivity).

[0134] According to the component ratio range, combined with preset optimization target parameters, multi-objective optimization processing is performed on the component ratio of the multi-component compound material to obtain the target component ratio, wherein the optimization target parameters include lattice constant matching, band gap width and electron mobility.

[0135] Specifically, after obtaining a feasible range of component ratios, a multi-objective optimization method is introduced to screen and refine them. The optimization objectives include not only the degree of matching with the lattice constants of the upper and lower layers, but also the simultaneous requirement that the material possess an appropriate bandgap and high electron mobility to ensure good carrier transport efficiency. Methods such as weighted objective functions, genetic algorithms, or particle swarm optimization can be used to find the optimal solution in the component space and ultimately determine the target component ratio. This approach can ensure strain compensation while improving quantum efficiency and thermal stability, providing a solid material foundation for high-efficiency VCSEL devices.

[0136] In one embodiment, see Figure 6 , the component ratio of the multi-component compound material is subjected to multi-objective optimization processing according to the component ratio interval and in combination with the preset optimization target parameters, and the target component ratio is obtained, including:

[0137] According to the component ratio range, constructing a component optimization objective function with the lattice constant matching, band gap width and electron mobility as optimization targets;

[0138] Specifically, lattice constant matching refers to the degree of fit between the lattice constant of the compensation material and the upper and lower structural materials (such as reflectors and quantum wells). The closer they are, the less stress can be reduced. The bandgap determines the material's absorption and emission characteristics for light of a specific wavelength. Electron mobility represents the speed at which carriers move in the material and has a direct impact on device efficiency. Taking these three key performance parameters into consideration, a multi-objective optimization function is established through mathematical modeling as an indicator for evaluating the quality of component combinations. The implementation method usually adopts the weighted objective function method, that is, after standardizing the three indicators separately, assigning weights and summing them, to construct a component optimization objective function with the lattice constant matching, bandgap and electron mobility as optimization targets. This function can provide the algorithm with a target direction in the subsequent optimization process, so as to find the component combination with the best physical properties. By constructing the component optimization objective function in this way, not only can the lattice stress be minimized, but also the photoelectric conversion efficiency and transmission stability can be improved.

[0139] According to the component ratio interval and the component optimization objective function, setting optimization constraints on the component ratio to obtain a component decomposition space;

[0140] Specifically, the optimization constraints are the boundaries and rules that limit the values ​​of variables, which are used to exclude unrealizable or unstable solutions. The purpose of this step is to limit the search range after the optimization goal is clear, so that the optimization process is more realistic and feasible. The implementation method mainly includes establishing logical conditions and mathematical inequalities, such as setting In+Ga=1, As+P=1; or setting the In content to not exceed 0.45 to prevent crystal instability. The lattice constant or band gap width can also be further restricted to a certain range. Through these constraints, a multi-dimensional feasible solution space can be effectively constructed, called the component decomposition space. Technically, this strategy can narrow the search range of the optimization algorithm, improve the optimization efficiency, and eliminate solutions that are not feasible in the process, ultimately improving the practicality of material design and the yield of batch manufacturing.

[0141] According to the group decomposition space, a global search optimization is performed on the component optimization objective function to obtain a preliminary optimized component set;

[0142] Specifically, global search optimization refers to the systematic search for one or more optimal solutions within the entire feasible solution space, avoiding falling into local minima and missing out on better solutions. The core purpose of this step is to extensively explore the aforementioned objective function through algorithms to find a combination of component ratios with near-optimal performance. Commonly used optimization algorithms include genetic algorithms (GAs), particle swarm optimization (PSOs), simulated annealing algorithms, etc. These methods can perform complex multivariable optimization without relying on derivative information. The specific process includes: encoding the initial component combination as a population; setting the fitness function as the objective function; continuously selecting, crossover, and mutating the population through an iterative process; and outputting several component combinations with high fitness after convergence. Through this global search process, it is possible to find material ratios with good lattice matching, appropriate bandgap width, and high mobility from a large range, and obtain a preliminary optimized component set, laying the foundation for subsequent fine-grained optimization.

[0143] According to the preliminary optimized component set, performing local iterative convergence processing on the component optimization objective function to obtain a converged optimized component set;

[0144] Specifically, the local iterative convergence process refers to a refined search near the obtained preliminary optimal solution to further approach the global optimal solution and make the objective function value reach a local minimum. The purpose of this step is to improve the accuracy and convergence stability, so as to obtain a high-quality component ratio with actual process feasibility. The implementation method can use the gradient descent method, Newton iteration method or local search heuristic algorithm to gradually reduce the search step size and observe the change of the objective function value until the change tends to be stable. This process can be completed through Python or Matlab program, and combined with the material model to provide real-time feedback on lattice constants, band gaps and other values. This method can ensure that the final result not only has superior theoretical performance, but also has good process adaptability and parameter stability, reducing the risk of subsequent material deposition and device failure.

[0145] According to the converged optimized component set, sensitivity analysis and performance evaluation are performed on the component ratio to obtain the target component ratio.

[0146] Specifically, sensitivity analysis assesses the impact of small changes in input parameters on output performance. This step is used to determine the process stability of the component ratio. Performance evaluation simulates or experimentally verifies the performance of the selected components under actual operating conditions. The primary goal of this step is to select a target component ratio among candidate components that combines excellent physical properties with process robustness. This is achieved by perturbing the converged optimized component set and observing the trends in lattice constant, bandgap, and electron mobility to determine whether the resulting point represents a stable minimum. A comprehensive evaluation is conducted using TCAD simulation, joint electrical-optical modeling, and experimental verification (such as thin-film XRD measurements and PL spectroscopy). The resulting target component ratio exhibits excellent matching performance, high luminous efficiency, and high process yield, making it suitable for strain compensation layer fabrication in actual VCSEL devices.

[0147] According to the target component ratio, obtaining corresponding target deposition control parameters, wherein the target deposition control parameters include a target temperature and a target pressure;

[0148] Specifically, after obtaining the target component ratio, the appropriate deposition parameter range is extracted based on the different sensitivities of each element in the multi-component compound material to the deposition environment, resulting in the corresponding target deposition control parameters. For example, since the In component easily evaporates at high temperatures, the temperature needs to be kept low, while the pressure is increased to enhance the In adsorption rate and suppress the escape of the P component. This method helps improve deposition accuracy and film uniformity, and prevents material separation, mismatch, or stress concentration.

[0149] In one embodiment, see Figure 7 , obtaining the corresponding target deposition control parameters according to the target component ratio includes:

[0150] Acquiring initial deposition control parameters corresponding to the multi-component compound material, wherein the initial deposition control parameters include initial temperature and initial pressure;

[0151] Specifically, the initial deposition control parameters refer to the general deposition process conditions used for the multi-compound material (such as InGaAsP) before any personalized adjustments are made, mainly including the initial deposition temperature and the initial reaction chamber pressure. For example, for InGaAsP materials, the initial temperature can be set to 580°C and the initial pressure to 80 Torr with reference to the existing MOCVD process data. The purpose of this step is to provide a benchmark for subsequent parameter adjustments based on specific components. The implementation method usually includes consulting the material process database, referring to existing deposition literature, or obtaining empirical parameters through preliminary experiments to determine an implementable and process-mature starting parameter set.

[0152] According to the multi-component compound material, obtaining a first sensitivity of each component in the multi-component compound material to temperature and a second sensitivity of each component to pressure;

[0153] Specifically, sensitivity refers to the sensitivity of each component in the material to changes in performance caused by changes in temperature or pressure during the deposition process. In multi-component compound materials, different elements respond differently to process conditions. For example, the In component is very sensitive to temperature changes. Increasing the temperature will cause the In component to evaporate again, thereby reducing the actual doping amount; while the Ga component is relatively stable and less sensitive to temperature. The purpose of this step is to build a regulatory factor basis between materials and processes by quantifying the different sensitivities of each component to temperature and pressure. The implementation method can be obtained through literature review, experimental statistics or first-principles simulation to obtain the first sensitivity (sensitivity to temperature) and second sensitivity (sensitivity to pressure) corresponding to each component element of the multi-component compound material. Through this step, a response model between component and process parameters is established, which provides key input variables for subsequent personalized parameter adjustments, making process adjustments more precise.

[0154] determining a first temperature adjustment coefficient based on each of the first sensitivities and in combination with the target component ratio;

[0155] Specifically, during the deposition process of multicomponent compound materials, the temperature response of each component varies significantly. The so-called primary sensitivity refers to the stability, doping efficiency, or retention of each component in the film under temperature fluctuations. For example, in systems such as InGaAs, In easily re-evaporates at high temperatures, making it very sensitive to temperature; whereas Ga is relatively stable and exhibits little variation over a wide temperature range. This difference can lead to deviations in retention ratios, incomplete reactions, or diffusion anomalies among different components at a uniform process temperature, thus impacting the overall material performance. Based on the varying temperature sensitivities of each component and the target ratios required in material design, a comprehensive adjustment factor, the primary adjustment coefficient, is derived to reflect the temperature regulation requirements of the material system. This coefficient is not a simple average value; rather, it is based on an analysis of the actual position of each component in the material and its temperature responsiveness. In other words, if certain highly temperature-sensitive components predominate in the material, the temperature regulation requirements of the entire system must be more cautious and detailed to avoid loss of sensitive components due to high temperatures. During implementation, this coefficient can be constructed by combining previously acquired sensitivity data to clarify the response tendency of each component to temperature increases or decreases. Furthermore, based on the target proportions of each component in the design, the weight or priority of each component in temperature regulation is analyzed. Ultimately, an indicator is generated that reflects the overall temperature regulation tendency of the material, which can be used to guide the optimal setting of the deposition temperature. Furthermore, the rationality of the adjustment coefficient can be further verified by referencing deviation trends in material composition in experimental deposition data, and continuous refinement can be made in practice to improve its accuracy. This adjustment mechanism significantly improves the retention of sensitive components during film deposition, effectively reducing problems such as component loss and uneven distribution caused by improper temperature. Furthermore, the introduction of this first adjustment coefficient is highly versatile and scalable, applicable to different material systems and deposition methods (such as MOCVD and PVD), significantly improving material consistency, reproducibility, and process stability.

[0156] determining a second adjustment coefficient of pressure according to each of the second sensitivities in combination with the target component ratio;

[0157] Specifically, pressure is a key process parameter influencing component migration, reaction efficiency, and material retention during thin film deposition. Secondary sensitivity refers to the process adaptability of individual components in a material to pressure changes. For example, certain light elements or elements with high gaseous reactivity (such as P, As, and Sb) are more susceptible to loss or diffusion when pressure decreases, resulting in a significant decrease in their concentration in the film. In contrast, metallic components such as Ga or Al are generally more adaptable to pressure changes over a wider range. Therefore, different elements exhibit varying retention capacities under the same pressure, and this variation is the core of secondary sensitivity. By quantifying and identifying these differences and combining them with the importance of each component in the target ratio, the overall adjustment direction for the current material system's pressure setting can be determined. The secondary pressure adjustment coefficient is a comprehensive indicator reflecting the pressure adaptability of a material system, informing the process system whether to increase or decrease the current pressure to balance reaction efficiency and component retention. It serves as a feedback coordinator between material design and process implementation. First, it is necessary to obtain the response characteristics of each component to pressure changes based on experimental data, literature or simulations. For example, if a component is easily lost at low pressure, it means that it is more sensitive to pressure. Then, based on the proportion of this component in the target material, its influence on pressure regulation can be determined. If a highly sensitive component accounts for a high proportion in the material, it is necessary to give priority to increasing the pressure to enhance its retention rate. Conversely, if the less sensitive component is dominant, the pressure can be appropriately reduced to increase the reaction rate and film density. At the same time, data-driven feedback adjustments can be made based on the composition test results of the sample after deposition to gradually optimize the pressure setting strategy. This pressure adjustment mechanism helps to maximize the retention of volatile or easily lost components, thereby ensuring the accuracy of the material ratio. Secondly, by reasonably controlling the pressure, the reaction interface activity and film formation rate of the film can be adjusted, and the crystallization quality and surface smoothness of the material can be improved. Thirdly, in complex material systems, this adjustment mechanism can prevent the inhomogeneity caused by mutual interference between components and improve the stability of the multi-component co-deposition process. In short, the introduction of the second adjustment coefficient not only optimizes the retention problem of a single component, but also realizes multi-objective coordinated control of the overall performance of the material, which has extremely high engineering practical value and industrial application prospects.

[0158] The initial deposition control parameter is adjusted according to the first adjustment coefficient and the second adjustment coefficient to obtain the target deposition control parameter.

[0159] Specifically, after obtaining the first adjustment coefficient corresponding to temperature and the second adjustment coefficient corresponding to pressure, the initial deposition temperature and initial pressure can be specifically corrected to form the target control parameters ultimately used for the deposition process. The deposition environment is automatically corrected according to the component characteristics, making the deposition process more in line with the actual needs of the material. Ultimately, this parameter adjustment mechanism can effectively improve film quality, reduce performance fluctuations caused by process deviations, improve the deposition accuracy of the strain compensation layer and the performance consistency of the device, and provide a reliable process foundation for VCSEL.

[0160] depositing the multi-component compound material between the first reflective unit and the quantum well layer according to the target deposition control parameters to obtain the first strain compensation layer;

[0161] Specifically, according to the target deposition control parameters, MOCVD (metal organic chemical vapor deposition) technology or MBE technology is used to accurately deposit the multi-component material between the first reflective unit and the quantum well layer to form the first strain compensation layer. In actual operation, the gas source can be selected from TMIn, TMGa, and , the carrier gas is By setting the V / III ratio, the material crystallization is controlled. This step can effectively buffer the stress transition between the first reflector and the active layer, reduce dislocation density, and improve the interface bonding quality, thereby improving the overall optical coupling efficiency and reliability of the device.

[0162] The multi-component compound material is deposited between the second reflective unit and the quantum well layer according to the target deposition control parameter to obtain the second strain compensation layer.

[0163] Specifically, using the same target deposition control parameters, a second strain-compensation layer is deposited below the quantum well layer, between the second reflector and the quantum well, to achieve symmetrical buffering of the lattice structure. This symmetrical structure not only enhances overall stress balance but also improves the uniformity of the light field distribution and resonance stability within the laser cavity. In practice, the strain-compensation layer is also controlled to a nanometer-level thickness, and in-situ monitoring is used to ensure crystal growth quality. The double-sided compensation structure significantly reduces the cavity defect rate and the risk of spectral drift, thereby achieving high-precision wavelength control and long-term stable operation.

[0164] In summary, the embodiments of the present invention provide a vertical cavity surface emitting laser lamp and a method for manufacturing the same.

[0165] It should be understood that the present invention is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted. In the above embodiments, several specific steps are described and illustrated as examples. However, the method of the present invention is not limited to the specific steps described and illustrated. Those skilled in the art may make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present invention.

[0166] The functional blocks shown in the block diagrams described above can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they may be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, and the like. When implemented in software, the elements of the present invention are programs or code segments used to perform the desired tasks. Programs or code segments may be stored in a machine-readable medium or transmitted via a data signal carried in a carrier wave over a transmission medium or communication link. "Machine-readable medium" may include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memory, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, and the like. Code segments may be downloaded via a computer network such as the Internet or an intranet.

[0167] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with the relevant laws, regulations and standards of the relevant location, and provide corresponding operation entrances for users to choose to authorize or refuse.

[0168] It should also be noted that the exemplary embodiments described herein describe methods or systems based on a series of steps or devices. However, the present invention is not limited to the order of the steps described above. In other words, the steps may be performed in the order described in the embodiments, or in a different order, or several steps may be performed simultaneously.

[0169] The above description is only a specific embodiment of the present invention. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present invention is not limited to this. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention.

Claims

1. A vertical cavity surface emitting laser lamp, characterized in that: include: Several laser lamp beads, wherein the laser lamp beads include an encapsulation layer, a light-emitting chip, a substrate, and a base, the encapsulation layer covering the light-emitting side surface of the light-emitting chip, the light-emitting chip bonded to the upper surface of the substrate, and the lower surface of the substrate connected to the base via a bonding layer; The light emitting chip includes a first reflection unit, a first strain compensation layer, a quantum well layer, a second strain compensation layer and a second reflection unit; The second reflecting unit and the first reflecting unit form a symmetrical resonant cavity; The first strain compensation layer and the second strain compensation layer are used to perform strain compensation on the quantum well layer, and the first strain compensation layer and the second strain compensation layer are distributed in a mirror-symmetrical manner with the quantum well layer as the center; The quantum well layer generates a light field with a target wavelength through stimulated emission; The first reflecting unit includes a plurality of alternately stacked first material layers having a first refractive index and second material layers having a second refractive index, the first material layers having a first physical thickness, the second material layers having a second physical thickness, the first refractive index being greater than the second refractive index, the first physical thickness being less than the second physical thickness, and the first material layers and the second material layers having the same optical thickness such that the light field having the target wavelength generates constructive interference; The encapsulation layer comprises a first encapsulation layer and a second encapsulation layer sequentially arranged along the optical axis direction of the light emitting chip; The first packaging layer includes two layers of elastic packaging medium, and the outer surface of the elastic packaging medium has a continuous smooth optical interface for constraining the light beam divergence angle to a preset angle range; The second encapsulation layer covers the outer side of the first encapsulation layer and includes a thermosetting polymer. The thermosetting polymer and the first encapsulation layer are chemically bonded through an interface modification layer. The interface modification layer includes a silane coupling agent or a dense transition zone formed by plasma activation treatment.

2. The vertical cavity surface emitting laser lamp according to claim 1, characterized in that: The laser lamp bead also includes a thermal management unit; The thermal management unit includes a composite thermal buffer layer provided between the light emitting chip and the substrate; The composite thermal buffer layer is composed of alternating layers of thermal conductive material layers and phase change energy storage media, wherein the thermal conductive material layers include a single layer or multiple layers of carbon-based nanomaterials, the phase change energy storage medium includes a phase change material, and the interlayer interface between the thermal conductive material layer and the phase change energy storage medium is connected by chemical bonding or physical adsorption.

3. The vertical cavity surface emitting laser lamp according to claim 1, characterized in that: The substrate is an insulating ceramic matrix, including a ceramic material layer and a surface composite metallization layer, wherein the surface composite metallization layer is formed by compounding a heat-conducting metal and a stress buffer alloy; The base includes an insulating support substrate and a conductive channel array, wherein the insulating support substrate includes an organic polymer material or an inorganic ceramic material, a grating structure having a target period corresponding to the target wavelength is integrated on the surface of the insulating support substrate, and the conductive channel array includes a noble metal conductive layer and a vertical interconnection structure; The substrate and the base are connected via a bonding layer, and the bonding layer includes a metal alloy phase and a ceramic polymer composite phase.

4. A method for preparing a vertical cavity surface emitting laser lamp, characterized in that: For preparing the vertical cavity surface emitting laser lamp according to any one of claims 1 to 3, the preparation method comprises: Clean the substrate surface and optimize the flatness of the cleaned substrate; Alternately depositing material layers on the surface of the substrate to form the first reflecting unit, wherein the first reflecting unit includes a first material layer having a first physical thickness and a second material layer having a second physical thickness; Depositing the second reflecting unit on the surface of the substrate; Depositing the first strain compensation layer between the first reflection unit and the quantum well layer, and depositing the second strain compensation layer between the second reflection unit and the quantum well layer, to obtain the light-emitting chip; Covering the light-emitting side surface of the light-emitting chip with the encapsulation layer, and bonding and fixing the light-emitting chip to the substrate after the flatness optimization treatment; Bonding the substrate and the base to obtain the laser lamp beads; Post-processing is performed on each of the laser lamp beads to obtain the vertical cavity surface emitting laser lamp.

5. The method for preparing a vertical cavity surface emitting laser lamp according to claim 4, characterized in that: The alternately depositing material layers on the surface of the substrate to form the first reflective unit includes: Calculating the first physical thickness according to the first refractive index and the target wavelength; Calculating the second physical thickness according to the second refractive index and the target wavelength; According to the first physical thickness and the second physical thickness, in combination with a preset deposition rate, alternately depositing the first material layer and the second material layer on the substrate surface, and obtaining and verifying a first optical thickness of the first material layer and a second optical thickness of the second material layer; When it is verified that the first optical thickness reaches a preset target thickness corresponding to the target wavelength and the second optical thickness reaches the preset target thickness, the deposition of the periodic material layer is completed; According to the preset number of periodic material layers to be deposited, the deposition of the periodic material layers is repeated until the alternating deposition of all periodic material layers is completed, thereby obtaining the first reflective unit.

6. The method for preparing a vertical cavity surface emitting laser lamp according to claim 4, characterized in that: The step of depositing the first strain compensation layer between the first reflective unit and the quantum well layer, and depositing the second strain compensation layer between the second reflective unit and the quantum well layer to obtain the light-emitting chip includes: Obtaining a preset target component ratio of a multi-component compound material for strain compensation according to a first lattice constant corresponding to the first reflective unit material and a second lattice constant corresponding to the quantum well layer material; According to the target component ratio, obtaining corresponding target deposition control parameters, wherein the target deposition control parameters include a target temperature and a target pressure; depositing the multi-component compound material between the first reflective unit and the quantum well layer according to the target deposition control parameters to obtain the first strain compensation layer; The multi-component compound material is deposited between the second reflective unit and the quantum well layer according to the target deposition control parameter to obtain the second strain compensation layer.

7. The method for preparing a vertical cavity surface emitting laser lamp according to claim 6, characterized in that: The step of obtaining a preset target component ratio of the multi-component material for strain compensation according to the first lattice constant corresponding to the material of the first reflective unit and the second lattice constant corresponding to the material of the quantum well layer includes: Calculating a lattice constant difference according to the first lattice constant and the second lattice constant; Obtaining a target lattice constant range corresponding to the strain compensation requirement according to the lattice constant difference; According to the physical and chemical properties of multi-component compound materials and combined with Wieger's law, the objective function relationship between the lattice constant and the proportion of material components is established; Calculating a component ratio range of a multi-component compound material according to the target lattice constant range and the target function relationship; According to the component ratio range, combined with preset optimization target parameters, multi-objective optimization processing is performed on the component ratio of the multi-component compound material to obtain the target component ratio, wherein the optimization target parameters include lattice constant matching, band gap width and electron mobility.

8. The method for preparing a vertical cavity surface emitting laser lamp according to claim 7, characterized in that: The multi-objective optimization process is performed on the component ratio of the multi-component compound material according to the component ratio interval and in combination with the preset optimization target parameters to obtain the target component ratio, which includes: According to the component ratio range, constructing a component optimization objective function with the lattice constant matching, band gap width and electron mobility as optimization targets; According to the component ratio interval and the component optimization objective function, setting optimization constraints on the component ratio to obtain a component decomposition space; According to the group decomposition space, a global search optimization is performed on the component optimization objective function to obtain a preliminary optimized component set; According to the preliminary optimized component set, performing local iterative convergence processing on the component optimization objective function to obtain a converged optimized component set; According to the converged optimized component set, sensitivity analysis and performance evaluation are performed on the component ratio to obtain the target component ratio.

9. The method for preparing a vertical cavity surface emitting laser lamp according to claim 6, wherein: The obtaining of corresponding target deposition control parameters according to the target component ratio includes: Acquiring initial deposition control parameters corresponding to the multi-component compound material, wherein the initial deposition control parameters include initial temperature and initial pressure; According to the multi-component compound material, obtaining a first sensitivity of each component in the multi-component compound material to temperature and a second sensitivity of each component to pressure; determining a first temperature adjustment coefficient based on each of the first sensitivities and in combination with the target component ratio; determining a second adjustment coefficient of pressure according to each of the second sensitivities in combination with the target component ratio; The initial deposition control parameter is adjusted according to the first adjustment coefficient and the second adjustment coefficient to obtain the target deposition control parameter.

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