Ion channel device and preparation method and application thereof

Abstract

The invention provides an ion channel device and a preparation method and application thereof. The device comprises a bottom plate, a two-dimensional material spacing layer, an electrode, a spacer and a packaging layer, the two-dimensional material spacer layer and the electrode are sequentially arranged on the bottom plate from bottom to top, the two-dimensional material spacer layer comprises multiple layers of two-dimensional materials, and a channel for ions to pass through is formed between the two-dimensional material layers which are adjacent up and down; up-down through micropores are formed in the bottom plate and the two-dimensional material spacing layer; the electrode is arranged on the upper surface of the two-dimensional material spacing layer, one end of the electrode extends out of the outer edge of the two-dimensional material spacing layer and is used for being externally connected with a power supply, and the insulating layer covers the electrode to package other parts except the external power supply end of the electrode to prevent electrode short circuit. According to the ion channel device, efficient transmission of ions can be realized by regulating and controlling the surface charge density through an electric field.

Description

Technical Field

[0001] The present invention relates to the technical field of nanomaterials and micro-nano devices, and particularly relates to an ion channel device, a preparation method thereof, and an application thereof. Background Art

[0002] As a core carrier for material transport and signal conversion, ion channels play a crucial role in living organisms. For example, potassium ion channels on cell membranes (such as the KcsA channel) can achieve highly selective transport of K⁺ at a rate of hundreds of millions of ions per second through precise conformational changes, while excluding Na⁺ ions with similar sizes. This high efficiency and biocompatibility make it an ideal template for the design of artificial ion channels. However, traditional artificial ion channels mostly use polymer membranes or nanoporous materials (such as alumina, carbon nanotubes), and their ion selectivity depends on pore size sieving effects or surface charge repulsion, which do not reach the sub-nanometer level and are difficult to achieve bio-level efficient dynamic regulation.

[0003] At the application level, the demand for intelligent ion channels in fields such as seawater desalination, high-energy batteries, and biomedicine is becoming increasingly urgent. Taking seawater desalination as an example, traditional reverse osmosis membranes are limited by fixed pore sizes and surface charges and are difficult to adapt to the dynamic fluctuations of salinity in tidal or estuary areas; while lithium-ion battery separators need to dynamically manage ion transport during charge and discharge to avoid safety hazards caused by dendrite growth. Existing technologies mostly use multi-layer composite membranes or complex chemical modifications to improve performance, but such solutions often sacrifice the response speed and process compatibility of the devices. Summary of the Invention

[0004] To solve the problems in the background art, the present invention provides an ion channel device, a preparation method thereof, and an application thereof. The device can achieve efficient ion transport by regulating the surface charge density through an electric field, and is prepared by standard micro-nano processing technology, providing feasibility for large-scale application. The technical solution of the present invention to solve the above technical problems is as follows: In a first aspect, the present invention provides an ion channel device, including a bottom plate, a two-dimensional material spacer layer, an electrode, a separator, and an insulating layer; The two-dimensional material spacer layer and the electrode are sequentially arranged on the bottom plate from bottom to top. The two-dimensional material spacer layer includes multiple layers of two-dimensional materials, and channels for ions to pass through are formed between adjacent two-dimensional material layers up and down; micropores penetrating up and down are provided on the bottom plate and the two-dimensional material spacer layer; The separator is arranged on the two-dimensional material spacer layer and covers the micropores to seal the upper openings of the micropores; The insulating layer covers the electrode and encapsulates other parts of the electrode except the external power supply end to prevent electrode short-circuit; The first liquid containing metal ions is in side contact with the side surface of the two-dimensional material spacer layer. The micropores are in contact with the second liquid and filled with the second liquid. Under the condition of an applied power supply, the metal ions in the first liquid are transported through the interlayer of the two-dimensional material spacer layer into the second liquid.

[0005] According to the above solution, the two-dimensional material of the two-dimensional material spacer layer is MoS2 or hBN.

[0006] According to the above solution, the two-dimensional material spacer layer includes 15 to 25 layers of two-dimensional materials.

[0007] According to the above solution, the diameter of the micropores is 5 μm to 10 μm.

[0008] According to the above solution, the insulating layer is made of an insulating material, such as PMMA.

[0009] According to the above solution, the bottom plate includes a silicon wafer and an upper silicon nitride film and a lower silicon nitride film respectively disposed on the upper and lower surfaces of the silicon wafer. The diameter of the micropore section of the side wall as the upper silicon nitride film is the same as that of the micropore section of the side wall as the two-dimensional material spacer layer, and the diameter of the micropore section of the side wall as the silicon wafer and the lower silicon nitride film is larger than that of the micropore section of the side wall as the upper silicon nitride film.

[0010] According to the above solution, the material of the separator is graphite; the electrode layer is an Au / Ti metal electrode or a chromium / gold metal electrode.

[0011] According to the above solution, a photosensitive polymer layer is provided on the surface of the two-dimensional material spacer layer.

[0012] In a second aspect, the present invention provides a method for preparing the above ion channel device, which uses a micro-nano processing technology to prepare the ion channel device, including the following steps: S1. Prepare a bottom plate and drill holes in the bottom plate; S2. Peel off to obtain a multi-layer two-dimensional material, and transfer the multi-layer two-dimensional material to the round hole of the bottom plate to form a two-dimensional material spacer layer, and drill holes in it to form micropores; S3. Deposit an electrode on the upper surface of the two-dimensional material spacer layer; S4. Deposit a separator on the two-dimensional material spacer layer to cover the micropores, and cover an insulating layer on the electrode to obtain the ion channel device.

[0013] In a third aspect, the present invention provides an application of the above ion channel device in metal ion transport.

[0014] According to the above solution, the metal ions are selected from K + , Mg 2+ and Al 3+ at least one of them.

[0015] Fourthly, the present invention provides a method for using the above ion channel device, comprising the following steps: S1. Connect a first liquid chamber above the ion device. The first liquid chamber contains a first liquid containing metal ions, and the first liquid is in contact with the side surface of the two-dimensional material spacer layer. A second liquid chamber is connected below the micropores. The second liquid chamber contains a second liquid, and the second liquid chamber is communicated with the micropores, and the second liquid fills the micropores; S2. Build a three-electrode electrochemical system, use the electrode as the working electrode, and set a reference electrode and a counter electrode, and apply a voltage to enable the ions in the first liquid to be transmitted through the two-dimensional material spacer layer into the second liquid in the micropores.

[0016] Specifically, the first liquid containing metal ions in the first liquid chamber is in contact with the two-dimensional material spacer layer. When no voltage is applied, the quantum force between the two-dimensional material layers maintains the layer spacing in a relatively small state, and the spatial steric effect of metal ions is significant, making it difficult to break through the two-dimensional material limitation and unable to be transmitted from the first liquid to the second liquid. After connecting an external power supply to the electrode and applying a voltage, the internal electron cloud structure of the two-dimensional material changes, triggering a conformational change in the material, and the layer spacing increases to a scale that can accommodate hydrated metal ions, thereby constructing an effective channel for cross-layer transport of metal ions, enabling the ions in the first liquid to enter the second liquid in the micropores through the ion channels between the two-dimensional material layers. When the power supply is turned off, the ion channel "closes" and ion transport stops. This "switch" mechanism responds quickly (millisecond-level switching) and can flexibly adjust the transport rate as needed. The present invention dynamically adjusts the charge density on the surface of the two-dimensional material through an external voltage, thereby controlling the efficiency of ion transport.

[0017] The beneficial effects of the present invention are: 1) The ion channel device of the present invention realizes the "switching" of the ion channel device by applying or not applying an external voltage. When an external voltage is applied, the ion channel "opens" to achieve ion transport, and when the voltage is turned off, the ion channel "closes" and ion transport stops, thereby realizing the opening and closing of ion transport, and the "switch" mechanism responds quickly; further, the charge density on the surface of the two-dimensional material can be dynamically adjusted through an external voltage, thereby controlling the rate of ion transport; 2) The ion channel device of the present invention can be used in the fields of seawater desalination, batteries, or biomedicine; in seawater desalination, by adjusting the voltage, it can respond to salinity changes in real time, and by adjusting the voltage, it can immediately adapt to the dynamic fluctuations of seawater salinity (such as salinity changes caused by tides), maintaining high desalination efficiency; in batteries, the dynamic regulation function can optimize the ion flux distribution during charge and discharge processes, effectively inhibit dendrite growth, and improve battery safety and cycle life; in the field of biomedicine, by dynamically regulating the surface charge density of two-dimensional materials, the flux and transmission path of ions (such as K⁺ ions) can be precisely controlled. For example, in a neural electrode interface, the device can simulate the response rhythm of biological membrane ion channels, achieve high-fidelity conversion between electrical signals and neural electrical activities, and avoid signal distortion problems caused by uncontrolled ion penetration in traditional polymer channels. At the same time, this regulation function can be adapted to a precise drug delivery system, and through voltage regulation of the ion gating effect, achieve controllable delivery of target molecules; this "on-demand response" characteristic enables the device to have excellent adaptability in complex environments, and the entire process requires no complex operations, only simple voltage control, which is both efficient and stable.

[0018] 3) Low cost and potential for large-scale production: The device of the present invention is prepared by standard micro-nano processing technology. The device preparation process is highly compatible with existing semiconductor production lines. Hundreds of devices can be mass-produced in a single batch, which is suitable for large-scale production, laying a foundation for large-scale applications in fields such as seawater desalination membranes and battery separators, and the preparation cost is low. 4) High stability and repeatability: The ion channel device of the present invention was subjected to ion penetration tests. The results showed that when no voltage was applied, ions could not pass through the channel at all within two hours (the penetration amount approached zero). After applying voltage, the penetration amount increased linearly with time, and the permeability coefficients measured in two independent experiments were highly close (error < 15%). This result not only confirmed the high efficiency of electric field regulation but also demonstrated the performance stability of the device during long-term use, providing a reliable guarantee for long-term operation scenarios such as biomedical implants and industrial water treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a cross-sectional view of the ion channel device of Embodiment 1 of the present invention; Figure 2 is a top view of the ion channel device of Embodiment 1 of the present invention after removing the bottom plate; Figure 3 is a cross-sectional view of the ion channel device in Embodiment 2 of the present invention; Figure 4 is a top view of the ion channel device in Embodiment 2 of the present invention after removing the bottom plate; Figure 5 is a schematic structural diagram of ion penetration of the ion channel device in Embodiment 3 of the present invention; Figure 6Ion infiltration test results of the ion channel device according to Embodiment 3 of the present invention; Among them, 1 is a separator, 2 is an insulating layer, 3 is a two-dimensional material spacer layer, 4 is a bottom plate, 5 is an electrode, 6 is a micropore; 7 is a first liquid chamber, and 8 is a second liquid chamber. Detailed implementation mode

[0020] The principles and features of the present invention will be described below in conjunction with the accompanying drawings and specific embodiments. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0021] It should be understood that the terms described in the present invention are only for describing specific embodiments and are not used to limit the present invention. In addition, for the numerical ranges in the present invention, it should be understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. Each intermediate value within any stated value or stated range, as well as each smaller range between any other stated value or intermediate value within the stated range, is also included in the present invention. The upper and lower limits of these smaller ranges may be independently included or excluded from the range.

[0022] Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention pertains. Although the present invention only describes preferred methods and materials, any methods and materials similar or equivalent to those described herein can also be used in the implementation or testing of the present invention. The reagents not specifically described in detail in this application are all conventional reagents and can be obtained commercially; the methods not specifically described in detail are all conventional experimental methods and can be learned from the prior art.

[0023] Without departing from the scope or spirit of the present invention, various improvements and changes can be made to the specific implementation modes of the present invention specification, which are obvious to those skilled in the art. Other implementation modes obtained from the specification of the present invention are obvious to those skilled in the art. The specification and examples of this application are only exemplary.

[0024] Regarding the "including", "comprising", "having", "containing", etc. used herein, they are all open-ended terms, that is, they are meant to include but not limited to.

[0025] The present invention provides an ion channel device, its preparation method and application. The device can achieve efficient ion transport by regulating the surface charge density through an electric field, and is prepared by standard micro-nano processing technology, providing feasibility for large-scale application. Embodiment 1 As Figure 1 and 2 shown, this embodiment provides an ion channel device, including a bottom plate 4, a two-dimensional material spacer layer 3, an electrode 5, a separator 1 and an insulating layer 2; The two-dimensional material spacer layer 3 and the electrode 5 are sequentially arranged on the bottom plate 4 from bottom to top. The two-dimensional material spacer layer 3 includes multiple layers of two-dimensional materials, and channels for ions to pass through are formed between adjacent two-dimensional material layers. The bottom plate 4 and the two-dimensional material spacer layer 3 are provided with micropores 6 penetrating up and down. The separator 1 is arranged on the two-dimensional material spacer layer 3 and covers the micropores 6 to seal the upper openings of the micropores 6. The electrode 5 is arranged on the upper surface of the two-dimensional material spacer layer 3, and one end of it extends out of the outer edge of the two-dimensional material spacer layer 3 for connection with an external power supply. The insulating layer 2 covers the electrode 5 to encapsulate other parts of the electrode 5 except the external power supply end to prevent electrode short circuit.

[0026] The first liquid containing metal ions contacts the side surface of the two-dimensional material spacer layer 3. The micropores 6 contact the second liquid and are filled with the second liquid. Under the condition of an external power supply, the metal ions in the first liquid are transported through the interlayer of the two-dimensional material spacer layer 3 into the second liquid.

[0027] Preferably, the two-dimensional material of the two-dimensional material spacer layer 3 is MoS2 or hBN.

[0028] More preferably, the two-dimensional material is selected as MoS2.

[0029] Preferably, the two-dimensional material spacer layer 3 includes 15 to 25 layers of two-dimensional materials.

[0030] More preferably, the two-dimensional material spacer layer 3 includes 19 to 21 layers of two-dimensional materials.

[0031] Preferably, the diameter of the micropore section of the side wall of the two-dimensional material spacer layer 3 is 5 μm to 10 μm.

[0032] According to the above scheme, the bottom plate 4 includes a silicon wafer and an upper silicon nitride film and a lower silicon nitride film respectively arranged on the upper and lower surfaces of the silicon wafer. The diameter of the micropore section of the side wall of the upper silicon nitride film is the same as the diameter of the micropore section of the side wall of the two-dimensional material spacer layer 3, and the diameter of the micropore section of the side wall of the silicon wafer and the lower silicon nitride film is larger than the diameter of the micropore section of the side wall of the upper silicon nitride film.

[0033] According to the above scheme, the material of the separator 1 is graphite; the electrode 5 is an Au / Ti metal electrode or a chromium / gold metal electrode, and the insulating layer 2 is made of an insulating material such as PMMA.

[0034] Preferably, a photosensitive polymer layer is provided on the surface of the two-dimensional material spacer layer 3.

[0035] The material of the photosensitive polymer layer can be selected as azobenzene derivatives, which will undergo a molecular configuration transformation under ultraviolet light irradiation, thereby changing the local surface charge distribution. When the device works, the electric field regulation provides a rough adjustment of the basic ion transport barrier, while ultraviolet light irradiation (wavelength of 365 nm and intensity of 10 mW / cm²) can finely adjust the charge density in specific regions. For example, in the application of seawater desalination, local light excitation of high-salinity regions through spot scanning technology can further improve the ion sieving efficiency at this position; in the scenario of biosensing, light regulation can achieve spatially selective ion transport and avoid the interference of the global action of the electric field on sensitive biological tissues.

[0036] Example 2 This example provides an ion channel device, the structure of which is as Figure 3 and 4 shown. The difference from Example 1 is that it includes two electrodes 5, and the two electrodes 5 are symmetrically arranged on the two-dimensional material spacer layer 3. The two electrodes 5 can make the force on the upper part of the two-dimensional material spacer layer 3 uniform and keep it symmetric.

[0037] When no voltage is applied, the quantum force between the two-dimensional material layers keeps the layer spacing in a small state, and the spatial steric effect of metal ions is significant. It is difficult to break through the two-dimensional material limitation and impossible to transfer from the first liquid to the second liquid. After connecting an external power supply to the electrodes and applying a voltage, the internal electron cloud structure of the two-dimensional material changes, triggering a conformational change of the material, and the layer spacing increases to a scale that can accommodate hydrated metal ions. Thus, an effective channel for metal ion cross-layer transport is constructed, enabling the ions in the first liquid to enter the second liquid in the micropores 6 through the ion channels between the two-dimensional material layers. When the power supply is turned off, the ion channel "closes" and ion transport stops. This "switch" mechanism responds quickly (millisecond-level switching) and can flexibly adjust the transport rate as needed. The present invention dynamically adjusts the charge density on the surface of the two-dimensional material through an external voltage, thereby controlling the efficiency of ion transport.

[0038] Example 3 This example provides a preparation method of the above ion channel device. Using micro-nano processing technology, the ion channel device is prepared, including the following steps: S1. Prepare the bottom plate 4 and drill holes in the bottom plate 4; S2. Peel to obtain multiple layers of two-dimensional materials, and transfer the multiple layers of two-dimensional materials to the round holes of the bottom plate 4 to form the two-dimensional material spacer layer 3, and drill holes in it, forming through holes 6 that penetrate up and down on the bottom plate 4 and the two-dimensional material spacer layer 3; S3. Deposit electrodes 5 on the upper surface of the two-dimensional material spacer layer 3; S4. Deposit the separator 1 on the two-dimensional material spacer layer 3 and cover the insulating layer 2 on the electrodes 5 to obtain the ion channel device.

[0039] Specifically, taking MoS2 as the two-dimensional material and graphite material as the spacer 1, the above-mentioned ion channel device is prepared. The preparation process flow is as follows: (1)Preparation of the bottom plate 4 (structure: upper silicon nitride film - silicon wafer - lower silicon nitride film) and drilling of the lower silicon nitride film and the silicon wafer: The silicon wafer with silicon nitride deposited and polished on both sides is cut along a straight line with a pen-type silicon wafer knife and a pointed tweezer to obtain several silicon wafers of 15 mm × 15 mm or slightly larger size. The silicon wafers of appropriate size are successively placed in beakers containing acetone and isopropanol, and each is cleaned in an ultrasonic cleaner at 60% power for 10 minutes to wash away the particulate matter and contaminants on their surfaces. The cleaned samples are dried with nitrogen. The silicon wafers are transferred to a spin coater, and a layer of S1813 photoresist is spin-coated on their surfaces for spin coating (the rotation speed reaches 500 r / min in the first step and is maintained for 10 s; the rotation speed reaches 2000 r / min in the second step and is maintained for 40 s. After spin coating, the silicon wafers are placed on a heating table and baked at 100 °C for 1 minute). The bottom plate 4 after spin coating is placed on an ultraviolet lithography machine, and the photoresist in a specific area on the bottom plate 4 is exposed using a mask with a specific pattern. After that, the lithographed silicon wafers are immersed in the prepared developer for 6 - 8 s, so that the photoresist in the exposed area dissolves in the developer. Then, it is cleaned with deionized water and dried with an air gun, so that the silicon wafers in the exposed area are exposed. Then, the sample with the window left is subjected to inductively coupled plasma etching. The etching gas is SF6, and the etching time is about 320 s to form small holes in the lower silicon nitride. Then, the etched bottom plate 4 is placed in a potassium hydroxide solution of a certain concentration and heated and soaked for about eight hours to form trapezoidal holes in the silicon wafer.

[0040] (2)Drilling of the upper silicon nitride film: The prepared bottom plate 4 is spin-coated again, and a small hole is lithographed in the middle of the film. Then, the denatured photoresist is washed away with the developer to leave a window. Then, the sample with the window left is subjected to inductively coupled plasma etching. The etching gas is SF6, and the etching time is about 300 s to form small holes in the upper silicon nitride film.

[0041] (3)Preparation and transfer of MoS2 two-dimensional material: Mechanically exfoliate MoS2 onto a clean silicon wafer and search for materials with appropriate size and shape; Drop a 6% polycarbonate (PC) solution on a clean glass slide, press another glass slide on it and slide it on both sides to form a PC thin film for standby; Place a PDMS spherical material in the middle of a glass slide, punch a hole in the middle of the transparent tape and stick it to pick up the PC thin film, stick the tape on the glass slide and press the PC thin film on the PDMS. Place the silicon wafer with MoS2 on the transfer stage and observe it under a microscope to search for multi-layer MoS2. Use the transfer stage to lower the glass slide with the PC thin film, press it on the target material, heat it to 130 °C and keep it for 10 minutes, then lift the material. Then, replace the silicon wafer on the transfer stage with the bottom plate 4 with a round hole, lower the glass slide again, align the lifted MoS2 with the round hole of the upper silicon nitride film of the bottom plate 4, heat it to 170 °C after the material is pressed on and keep it for 5 minutes to transfer the MoS2 onto the round hole of the bottom plate 4.

[0042] (4)Drilling of two-dimensional MoS2 material: Perform inductively coupled plasma etching on the bottom plate 4 sample with the existing two-dimensional MoS2 material, the etching gas is O2, and the etching time is about 600 s to form a micropore 6 penetrating through the two-dimensional MoS2 material and the bottom plate 4.

[0043] (5)Deposition of electrode 5: First, use photolithography to reserve a metal deposition groove, then perform deposition, and finally remove the photoresist and excess metal. Specifically, spin-coat the bottom plate 4 sample with the existing two-dimensional MoS2 material, first spin-coat a layer of LOR 3A photoresist on its surface, dry it on a heating stage at 160 °C for five minutes, then spin-coat a layer of S1805 photoresist, dry it on a heating stage at 100 °C for one minute, and then perform photolithography and development. Use the photographing and stitching functions of the photolithography machine to obtain a full picture of the sample, then draw the shape of the electrode, perform photolithography and development to obtain the groove shape. Then perform metal deposition, and evaporate a metal layer on the photoresist and the groove surface by DC magnetron sputtering. Then, wash away the remaining photoresist and the metal deposited on its upper surface.

[0044] (6)Deposition of separator 1: Repeat the above steps of photolithography to reserve a groove, but at this time the groove should cover the micropore 6. After obtaining the groove, perform deposition again, the material is graphite, and finally remove the excess part.

[0045] (7)Covering of insulating layer 2: Use PMMA as the photoresist, repeat the above photolithography operation, perform photolithography on the non-insulating area, and directly obtain the insulating layer 2 after development, so that the electrode 5 remains in the non-photolithographed insulating area.

[0046] In some preferred embodiments, a photosensitive polymer layer is provided on the surface of the two-dimensional material spacer layer 3. This solution does not require changing the micro-nano processing process of the original device. Only the step of coating the photosensitive layer needs to be added before encapsulation, taking into account both process compatibility and function expansion.

[0047] Example 4 The ion channel device of the present invention can be applied to metal ion transport.

[0048] Preferably, the metal ions include K + , Mg 2+ and Al 3+ and at least one of them.

[0049] To verify the ion transport performance of the device, a test experiment was designed. The ion channel device prepared in Example 2 above was tested. Its structural schematic diagram is as Figure 5 shown. The prepared ion channel device was fixed between two liquid chambers (the first liquid chamber 7 and the second liquid chamber 8). The first liquid chamber 7 was in contact with the two-dimensional material spacer layer 3, and a solution containing K⁺ was injected into it. The second liquid chamber 8 was connected to the micropore 6, and pure water was inside it. A three-electrode chemical system was built. The electrode 5 of the device was used as the working electrode, and a reference electrode (calomel reference electrode) and a counter electrode (Pt electrode) were respectively set in the first liquid chamber 7. A counter electrode was set in the second liquid chamber 8 (setting a counter electrode in each of the two chambers here is to ensure that the voltage acting on the material causes ion penetration, rather than due to the potential difference between the two chambers). The external power supply was connected through the electrodes. The test was divided into two groups - one group without applying voltage, and the other group applying a constant voltage of -0.8V to -1V (relative to the reference electrode). Samples were taken from the pure water side every 30 minutes, and the K⁺ concentration was detected using a high-precision instrument (ICP-MS). The results are as Figure 6 shown. Without applying voltage, the concentration in the pure water side remained close to zero within two hours, indicating that the channel was in the "closed" state at this time and K⁺ could not pass through. When voltage was applied, K⁺ began to penetrate from the solution side to the pure water side, and the penetration amount increased linearly with time. Finally, the permeability coefficients of the two experiments were calculated to be 2.02×10 -6 and 1.70×10 -6 square meters per second respectively, and the values were very close. This result not only proves that voltage can effectively "open" the channel, but also shows that the device performs stably in different tests, has reliable regulation ability and repeatability, providing a solid experimental basis for practical applications.

[0050] The rate of ion transport can also be controlled by adjusting the magnitude of the applied voltage.

[0051] The ion channel device of the present invention can be used in the fields of seawater desalination, batteries, or biomedicine; in seawater desalination, by adjusting the voltage, it can respond to salinity changes in real time, and by adjusting the voltage, it can immediately adapt to the dynamic fluctuations of seawater salinity (such as salinity changes caused by tides), maintaining high desalination efficiency; in batteries, the dynamic regulation function can optimize the ion flux distribution during the charge and discharge process, effectively inhibit dendrite growth, and improve battery safety and cycle life; in the field of biomedicine, by dynamically regulating the surface charge density of two-dimensional materials, the flux and transmission path of ions (such as K⁺ ions) can be precisely controlled. For example, in a neural electrode interface, the device can simulate the response rhythm of biological membrane ion channels, achieve high-fidelity conversion between electrical signals and neural electrical activities, and avoid signal distortion problems caused by out-of-control ion penetration in traditional polymer channels. At the same time, this regulation function can be adapted to a precise drug delivery system, and by adjusting the voltage to regulate the ion gating effect, the controllable delivery of targeted molecules can be realized; this "on-demand response" characteristic enables the device to have excellent adaptability in complex environments, and the whole process requires no complex operations, only simple voltage control, which is both efficient and stable. The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. An ion channel device, characterized in that, It includes a bottom plate, a two-dimensional material spacer layer, electrodes, a separator, and an insulating layer; The two-dimensional material spacer layer and the electrodes are sequentially arranged on the bottom plate from bottom to top. The two-dimensional material spacer layer includes multiple layers of two-dimensional materials, and channels for ions to pass through are formed between adjacent two-dimensional material layers up and down. Micropores penetrating up and down are provided on the bottom plate and the two-dimensional material spacer layer; The separator is arranged on the two-dimensional material spacer layer and covers the micropores for closing the upper openings of the micropores; The electrodes are arranged on the upper surface of the two-dimensional material spacer layer, and one end of each electrode extends out of the outer edge of the two-dimensional material spacer layer for connecting to an external power source; The insulating layer covers the electrodes and encapsulates other parts of the electrodes except the external power connection ends to prevent short circuits of the electrodes; A first liquid containing metal ions contacts the side surface of the two-dimensional material spacer layer. The micropores contact a second liquid and are filled with the second liquid. Under the condition of an externally applied power source, the metal ions in the first liquid are transmitted through the interlayer of the two-dimensional material spacer layer into the second liquid.

2. The ion channel device according to claim 1, wherein The two-dimensional material of the two-dimensional material spacer layer is MoS2 or hBN.

3. The ion channel device according to claim 2, characterized in that, The two-dimensional material spacer layer includes 15 to 25 layers of two-dimensional materials.

4. The ion channel device according to claim 1, characterized in that, The diameter of the micropore section of the side wall of the two-dimensional material spacer layer is 5 μm to 10 μm.

5. The ion channel device according to any one of claims 1 to 4, characterized in that, The bottom plate includes a silicon wafer and an upper silicon nitride film and a lower silicon nitride film respectively arranged on the upper and lower surfaces of the silicon wafer. The diameter of the micropore section of the side wall of the upper silicon nitride film is the same as the diameter of the micropore section of the side wall of the two-dimensional material spacer layer, and the diameter of the micropore section of the side wall of the silicon wafer and the lower silicon nitride film is larger than the diameter of the micropore section of the side wall of the upper silicon nitride film.

6. The ion channel device according to any one of claims 1 to 4, characterized in that, A photosensitive polymer layer is provided on the surface of the two-dimensional material spacer layer.

7. The preparation method of the ion channel device according to any one of claims 1 to 6, characterized in that, Using a micro-nano processing technology, the ion channel device is prepared, including the following steps: S1. Prepare a bottom plate and drill holes in the bottom plate; S2. Peel to obtain multiple layers of two-dimensional materials, and transfer the multiple layers of two-dimensional materials to the round holes of the bottom plate to form a two-dimensional material spacer layer, and drill holes in it to form micropores; S3. Deposit electrodes on the upper surface of the two-dimensional material spacer layer; S4. Deposit a separator on the two-dimensional material spacer layer to cover the micropores, and cover an insulating layer on the electrodes to obtain the ion channel device.

8. The application of the ion channel device according to any one of claims 1 to 6 in metal ion transmission.

9. The application according to claim 8, wherein The metal ion is selected from at least one of K + , Mg 2+ and Al 3+ .

10. The method of using the ion channel device according to any one of claims 1 to 6, characterized in that, Including the following steps: S1. Connect a first liquid chamber above the ion device. The first liquid chamber contains a first liquid containing metal ions, and the first liquid contacts the side surface of the two-dimensional material spacer layer. A second liquid chamber is connected below the micropores. The second liquid chamber contains a second liquid. The second liquid chamber is communicated with the micropores, and the second liquid fills the micropores; S2. Build a three-electrode electrochemical system, use the electrodes as working electrodes, and set a reference electrode and a counter electrode, and apply a voltage to make the metal ions in the first liquid be transmitted through the two-dimensional material spacer layer into the second liquid in the micropores.

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