Cavity surface pretreatment device and method of semiconductor laser

Abstract

The invention relates to a cavity surface pretreatment device and method of a semiconductor laser, and relates to the technical field of semiconductor pretreatment, the device comprises a vacuum box and a direct current power supply, an accommodating cover is arranged in the vacuum box, a spongy palladium-rhodium alloy is fixed in the accommodating cover, the bottom end of the accommodating cover is opened, the upper end of the accommodating cover is communicated with an ammonia gas input pipe, and the lower end of the accommodating cover is communicated with an ammonia gas output pipe; electrode plates are respectively fixed on two sides in the accommodating cover, the two electrode plates are respectively contacted with two ends of the spongy palladium-rhodium alloy, and two electrodes of the direct-current power supply are respectively and electrically connected with the two electrode plates. According to the scheme, the cavity surface of the semiconductor laser can be cleaned, pollutants and surface micromolecular structures which cause laser absorption are eliminated, use of plasma type complex equipment and instruments is avoided, and excessive cleaning or device damage is avoided; the palladium-rhodium alloy is resistant to high temperature, keeps stable chemical properties, and does not bring other element-level molecules; and through the purging step, the cleanliness of the surfaces of the materials is improved, and the cleaning effect and the cleaning efficiency are improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor pretreatment, and particularly relates to a device and method for preprocessing the cavity surface of a semiconductor laser. Background Art

[0002] Before coating the laser cavity surface of a semiconductor laser, it is generally necessary to preprocess the cavity surface of the device; the purpose of the preprocessing is to clean the cavity surface and eliminate pollutants and surface small molecule structures that cause laser absorption.

[0003] The existing invention patent application with the publication number of CN119530703A discloses plasma cleaning before sputtering. A method for forming an integrated circuit includes: forming a first copper feature in a first metal layer above a semiconductor substrate; and forming a dielectric layer above the first copper feature. The method further includes: forming an opening in the dielectric layer to expose the copper feature; and exposing the first copper feature to a hydrogen plasma to chemically reduce copper compounds generated due to the formation of the opening. The hydrogen plasma is generated using RF bias power and RF source power.

[0004] Conventional processing methods require relatively complex equipment and instruments such as plasma, and if the effect is not well controlled, the plasma is likely to cause structural damage to the cavity surface. Summary of the Invention

[0005] The present application provides a device and method for preprocessing the cavity surface of a semiconductor laser, which avoids using relatively complex equipment and instruments of the plasma type and avoids over-cleaning or device damage.

[0006] The device and method for preprocessing the cavity surface of a semiconductor laser provided by the present application adopt the following technical solutions: A device for preprocessing the cavity surface of a semiconductor laser includes a vacuum chamber and a DC power supply. The vacuum chamber is provided with an inlet and outlet door. The vacuum chamber is connected to a vacuum pumping tube, an ammonia input tube, and an exhaust pipe. A receiving cover is arranged in the vacuum chamber. A sponge-like palladium-rhodium alloy is fixed in the receiving cover. The bottom end of the receiving cover is open. The upper end of the receiving cover is connected to the ammonia input tube. Electrode plates are respectively fixed on both sides inside the receiving cover. The two electrode plates respectively contact both ends of the sponge-like palladium-rhodium alloy. The two electrodes of the DC power supply are respectively electrically connected to the two electrode plates.

[0007] By adopting the above technical solutions, under the catalytic action of the sponge-like palladium-rhodium alloy, and under voltage and temperature conditions, ammonia molecules are ionized to form an ammonia ion cloud to clean the surface of the semiconductor laser.

[0008] Optionally, a linear module one is fixed on the vacuum chamber. A material loading plate is installed on the sliding seat of the linear module one. The sliding direction of the material loading plate faces the inlet and outlet door.

[0009] By adopting the above technical solution, the material loading plate is driven by the linear module one to move. When the material loading plate approaches the feeding and discharging door, it is convenient for personnel to pick up and place the material.

[0010] Optionally, a linear module two is fixed on the slide of the linear module one, the material loading plate is fixed on the slide of the linear module two, and the length directions of the linear module one and the linear module two are perpendicular to each other.

[0011] By adopting the above technical solution, through the operation of the linear module one and the linear module two, the material loading plate moves on the horizontal plane, which is convenient for adjusting the relative position between the material and the spongy palladium rhodium alloy.

[0012] Optionally, a positioning groove for placing the material is provided on the material loading plate, and the top surface of the material is higher than the surface of the material loading plate.

[0013] By adopting the above technical solution, the material is placed through the positioning groove to form positioning, and the garbage cleared from the top of the material is easily separated from the surface of the material under the blowing action.

[0014] Optionally, two partition plates are slidably connected in the vacuum box. The two partition plates are symmetrically arranged and form a plate body that fits the bottom surface of the accommodating cover through sliding combination, and a blowing port is formed between the two partition plates.

[0015] By adopting the above technical solution, after the two partition plates are slidably combined under the spongy palladium rhodium alloy, ammonia can only flow downward through the blowing port. Since the ammonia intake per unit time remains unchanged, the ammonia flow rate at the blowing port increases significantly, playing a role in purging and cleaning the top surface of the material.

[0016] Optionally, a motor one and a bidirectional lead screw driven by the motor one are fixed in the vacuum box. The thread rotation directions at both ends of the bidirectional lead screw are opposite, and the two partition plates are respectively threadedly connected to both ends of the bidirectional lead screw.

[0017] By adopting the above technical solution, when the motor one operates, the bidirectional lead screw rotates, and the bidirectional lead screw drives the two partition plates to approach or move away from each other through the threaded connection at both ends.

[0018] Optionally, an observation port is provided on the top surface of the vacuum box, and an observation glass is fixedly and hermetically arranged in the observation port.

[0019] By adopting the above technical solution, after the material moves to directly below the observation glass, the cleaning state of the material surface is observed in combination with the lighting device, so as to determine the length of the cleaning time.

[0020] In the second aspect, the present application provides a method for preprocessing the cavity surface of a semiconductor laser, adopting the following technical solution: A method for preprocessing the cavity surface of a semiconductor laser, which uses the above-mentioned device for preprocessing the cavity surface of a semiconductor laser, includes the following steps: Step S1: Place the semiconductor laser on the material loading plate and directly below the spongy palladium-rhodium alloy, and close the inlet and outlet doors; Step S2: Evacuate the vacuum chamber until the vacuum pressure reaches the order of 5e-7 Torr; Step S3: Apply an electric current to the spongy palladium-rhodium alloy through a DC power supply with a power of 800 - 1200 W. After maintaining the energized state for 3 - 5 minutes, introduce ammonia gas through the ammonia gas input pipe; Step S4: Ionize ammonia gas molecules to form an ammonia ion cloud to clean the surface of the semiconductor laser, with a maintenance time of 10 - 30 minutes; Step S5: After the cleaning is completed, turn off the power supply and the gas supply, restore the normal pressure in the vacuum chamber, discharge the waste gas in the vacuum chamber, and take out the semiconductor laser.

[0021] By adopting the above technical solution, through this processing method, the cavity surface of the semiconductor laser can be cleaned, pollutants and surface small molecule structures that cause laser absorption can be eliminated, complex equipment and instruments of the plasma type can be avoided, and over-cleaning or device damage can be avoided.

[0022] Optionally, the semiconductor laser is arranged 0.8 - 1.2 cm below the spongy palladium-rhodium alloy.

[0023] By adopting the above technical solution, a better cleaning effect can be achieved at this distance.

[0024] Optionally, the process of Step S4 further includes a purging step: When the first motor operates, the two partition plates are combined below the spongy palladium-rhodium alloy, so that ammonia gas can only flow downward through the air blowing port. At the same time, the first linear module and the second linear module work, causing the semiconductor laser to move on the horizontal plane, so that the air blowing port sweeps across different positions of the semiconductor laser. After completion, the first motor rotates in the reverse direction to make the two partition plates leave below the spongy palladium-rhodium alloy, and the material loading plate returns to directly below the spongy palladium-rhodium alloy; The purging step is performed every 3 - 5 minutes.

[0025] By adopting the above technical solution, since the ammonia gas intake per unit time remains unchanged, the ammonia gas flow rate at the air blowing port increases significantly, playing a role in purging and cleaning the top surface of the material, blowing the cleaned garbage away from the surface of the material, and enabling the ammonia ion group to achieve a better cleaning effect.

[0026] In summary, the present application includes at least one of the following beneficial technical effects: 1. It can clean the cavity surface of the semiconductor laser, eliminate pollutants and surface small molecule structures that cause laser absorption, avoid using complex equipment and instruments of the plasma type, and avoid over-cleaning or device damage; 2. The spongy palladium-rhodium alloy functions as a catalyst. The palladium-rhodium alloy itself is heat-resistant, maintains stable chemical properties, and does not introduce molecules of other elemental levels. 3. Through the purging step, the cleanliness of the material surface is increased, and the cleaning effect and cleaning efficiency are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a front cross-sectional view of a cavity surface pretreatment device for a semiconductor laser in an embodiment; Figure 2 is a top view of linear module one, the material holding plate, and linear module two in an embodiment; Figure 3 is a partial perspective view of an embodiment; Figure 4 is a perspective view of the partition plate and the air blowing port in an embodiment; Figure 5 is a top schematic view of the purging step in Embodiment 3.

[0028] Description of the reference numerals: 1. Vacuum chamber; 2. DC power supply; 11. Inlet and outlet door; 12. Vacuum pumping tube; 13. Ammonia input tube; 14. Exhaust pipe; 15. Accommodating cover; 3. Spongy palladium-rhodium alloy; 31. Electrode plate; 41. Linear module one; 4. Material holding plate; 42. Linear module two; 43. Positioning groove; 5. Partition plate; 51. Air blowing port; 52. Motor one; 53. Bi-directional lead screw; 16. Observation port; 17. Observation glass. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0029] The following further details the present application with reference to the accompanying drawings.

[0030] Embodiment 1:

[0031] Referring to Figure 1 , this embodiment discloses a cavity surface pretreatment device for a semiconductor laser, including a vacuum chamber 1 and a DC power supply 2. The vacuum chamber 1 is provided with an inlet and outlet door 11, and is connected to a vacuum pumping tube 12, an ammonia input tube 13, and an exhaust pipe 14. Solenoid valves are provided on the vacuum pumping tube 12, the ammonia input tube 13, and the exhaust pipe 14, and can be controlled to be opened and closed. The DC power supply 2 is located outside the vacuum chamber 1, and the two electrode ends of the DC power supply 2 are introduced into the vacuum chamber 1 through wires.

[0032] Inside the vacuum chamber 1, there is a receiving cover 15. Inside the receiving cover 15, a spongy palladium-rhodium alloy 3 is fixed. A large number of pores are distributed inside the spongy palladium-rhodium alloy 3, and both the upper and lower ends of the spongy palladium-rhodium alloy 3 can conduct air. The bottom end of the receiving cover 15 is open, and the upper end of the receiving cover 15 is in an inverted horn shape. The upper end of the receiving cover 15 is connected to the ammonia input pipe 13. On both sides inside the receiving cover 15, electrode plates 31 are respectively fixed. The two electrode plates 31 respectively contact both ends of the spongy palladium-rhodium alloy 3. The two electrodes of the DC power supply 2 are respectively electrically connected to the energized terminals of the two electrode plates 31.

[0033] Refer to Figure 2 , a linear module one 41 is fixed to the vacuum chamber 1. A material receiving plate 4 is installed on the sliding seat of the linear module one 41. The sliding direction of the material receiving plate 4 faces the access door 11. A linear module two 42 is fixed to the sliding seat of the linear module one 41. The material receiving plate 4 is fixed to the sliding seat of the linear module two 42. Both the linear module one 41 and the linear module two 42 are horizontally arranged, and the length directions of the linear module one 41 and the linear module two 42 are perpendicular to each other. By the operation of the linear module one 41 and the linear module two 42, the material receiving plate 4 is moved on the horizontal plane. When the material receiving plate 4 is close to the access door 11, it is convenient for personnel to pick up and place the material. It should be noted that the motors of both the linear module one 41 and the linear module two 42 are of a sealed structure and can operate in various environments.

[0034] Refer to Figure 1 and Figure 2 , a positioning groove 43 for placing the material is provided on the material receiving plate 4, and the top surface of the material is higher than the surface of the material receiving plate 4. The material is placed through the positioning groove 43 to form a position, avoiding the displacement of the material on the material receiving plate 4; through the structural setting that the top surface of the material is higher than the surface of the material receiving plate 4, the garbage cleared from the top of the material can easily leave the surface of the material under the blowing action.

[0035] Refer to Figure 3 and Figure 4 , two partition plates 5 are slidably connected inside the vacuum chamber 1. The two partition plates 5 are symmetrically arranged and form a plate body that fits the bottom surface of the receiving cover 15 through sliding combination. A blowing port 51 is formed between the two partition plates 5.

[0036] A motor one 52 and a bidirectional lead screw 53 driven by the motor one 52 are fixed inside the vacuum chamber 1. The thread directions of both ends of the bidirectional lead screw 53 are opposite. The two partition plates 5 are respectively threadedly connected to both ends of the bidirectional lead screw 53. The ends of the two partition plates 5 away from the bidirectional lead screw 53 are slidably connected to the inner wall of the vacuum chamber 1. The motor one 52 is of a sealed structure and can operate in various environments.

[0037] Refer to Figure 1The top surface of the vacuum box 1 is provided with an observation port 16, inside which an observation glass 17 is fixed and sealed. The horizontal position of the observation port 16 is located between the containing cover 15 and the inlet and outlet door 11. Through the observation port 16 and the observation glass 17, personnel can observe the cleanliness status of the top surface of the material.

[0038] Example 2:

[0039] A method for preprocessing a cavity surface of a semiconductor laser, using a cavity surface preprocessing device of the semiconductor laser of the first embodiment, comprises the following steps: Step S1: Place the semiconductor laser on the holding plate 4, directly below the sponge-like palladium-rhodium alloy 3, and close the loading and unloading door 11. The movement of the holding plate 4 is achieved by the operation of linear modules 1 41 and 2 42. The semiconductor laser is placed 0.8-1.2 cm below the sponge-like palladium-rhodium alloy 3, preferably 1 cm.

[0040] Step S2: Evacuate the vacuum box 1 to a vacuum pressure of 5e-7 Torr. The vacuuming is achieved through the vacuum tube 12. The vacuum tube 12 is a structure provided by the vacuum box 1. The other end of the vacuum tube 12 is connected to the vacuum equipment.

[0041] Step S3: The sponge-like palladium-rhodium alloy 3 is energized by a DC power supply 2 with a power of 800-1200 W, so that the temperature of the sponge-like palladium-rhodium alloy 3 rises rapidly. Under a vacuum state, the sponge-like palladium-rhodium alloy 3 can be seen to emit bright light. In this state, the adsorbent on the surface of the alloy will quickly dissociate under a vacuum state, forming a clean and pure surface.

[0042] After keeping the power on for 3-5 minutes, ammonia is introduced through the ammonia inlet pipe 13, and vacuuming is turned off at the same time. After the pressure in the vacuum box 1 rises to normal pressure, the exhaust pipe 14 is opened.

[0043] Step S4: Ammonia molecules are ionized to form an ammonia ion cloud to clean the surface of the semiconductor laser for 10-30 minutes.

[0044] The cleaning principle is as follows: Ammonia molecules are polar and readily decompose in their natural state, forming reducing ion clusters. As ammonia molecules pass through the high-temperature sponge-like palladium-rhodium alloy 3, their kinetic energy increases, allowing them to collide with the alloy's surface more frequently, increasing the probability of ionization. The palladium-rhodium alloy itself has a relatively high molecular number and readily loses peripheral electrons, promoting the ionization of ammonia molecules and forming a highly concentrated ammonia ion cloud that effectively cleans and reduces impurities such as adsorbed molecules, water, and oxygen on the device surface.

[0045] In this process, the material is fully immersed in the internal reducing ion groups. The high-temperature sponge-like palladium-rhodium alloy 3 increases the collision kinetic energy and collision probability of ammonia molecules. At the same time, the surface of the palladium-rhodium alloy that has undergone high-temperature self-purification and its characteristic of easily losing surface electrons also promote the ionization of ammonia molecules. This promoting effect can form a certain concentration of reducing ion groups at the outlet of the palladium-rhodium alloy, and there is almost no impact damage energy.

[0046] The sponge-like palladium-rhodium alloy 3 acts as a catalyst. The palladium-rhodium alloy itself is heat-resistant, maintains stable chemical properties, and does not introduce other elemental molecules.

[0047] Step S5: After the cleaning is completed, turn off the power supply and the gas supply, restore normal pressure in the vacuum chamber 1, exhaust the waste gas in the vacuum chamber 1. A fan is installed on the exhaust pipe 14, and the exhaust is carried out through the exhaust pipe 14. Then take out the semiconductor laser.

[0048] In summary, through this treatment method, the cavity surface of the semiconductor laser can be cleaned, the pollutants and surface small molecule structures that cause laser absorption can be eliminated, complex plasma equipment and instruments can be avoided, and over-cleaning or device damage can be avoided.

[0049] Embodiment Three:

[0050] A method for pre-treating the cavity surface of a semiconductor laser. The difference between Embodiment Three and Embodiment Two is that during the process of Step S4, it further includes a purging step: Refer to Figure 3 and Figure 5 , the operation of the first motor 52 causes the two partitions 5 to be combined below the sponge-like palladium-rhodium alloy 3, so that ammonia can only flow downward through the air blowing port 51. At the same time, the first linear module 41 and the second linear module 42 work, causing the semiconductor laser to move on the horizontal plane, so that the air blowing port 51 sweeps across different positions of the semiconductor laser.

[0051] Since the ammonia intake per unit time remains unchanged, the ammonia flow rate at the air blowing port 51 increases significantly, playing a role in purging and cleaning the top surface of the material, blowing the cleaned garbage away from the surface of the material, so that the ammonium ion groups can achieve a better cleaning effect. No other gases are introduced during the blowing process, no impurities are introduced, the cleanliness of the system will not be reduced, and there is no need to adjust the ammonia intake. The ammonium ion groups can still play a cleaning effect during the blowing process.

[0052] After completion, the first motor 52 rotates in reverse to make the two partitions 5 leave below the sponge-like palladium-rhodium alloy 3, and the material holding plate 4 returns to directly below the sponge-like palladium-rhodium alloy 3, and returns to the state where the ammonium ion groups continuously clean the material again.

[0053] The purging step is carried out every 3 - 5 minutes to reduce the obstruction of dirt to the cleaning of the material surface. During the cleaning process, the operator can control the operation of the first linear module 41 and the second linear module 42 to move the material directly below the observation glass 17, and observe the cleaning status of the material surface in combination with the lighting device, so as to determine the duration of cleaning.

[0054] Through the purging step of this embodiment, the cleanliness of the material surface is increased, and the cleaning effect and efficiency are improved.

[0055] The above are all the preferred embodiments of this application. The protection scope of this application is not limited accordingly. Therefore, all equivalent changes made according to the structure, shape, and principle of this application should be covered within the protection scope of this application.

Claims

1. A cavity surface pretreatment device for a semiconductor laser, characterized in that: It includes a vacuum chamber (1) and a DC power supply (2). The vacuum chamber (1) is provided with a loading and unloading door (11). The vacuum chamber (1) is connected to a vacuum pumping pipe (12), an ammonia input pipe (13), and an exhaust pipe (14). Inside the vacuum chamber (1), there is a receiving cover (15). A spongy palladium-rhodium alloy (3) is fixed inside the receiving cover (15). The bottom end of the receiving cover (15) is open. The upper end of the receiving cover (15) is connected to the ammonia input pipe (13). On both sides inside the receiving cover (15), electrode plates (31) are respectively fixed. The two electrode plates (31) respectively contact both ends of the spongy palladium-rhodium alloy (3). The two electrodes of the DC power supply (2) are respectively electrically connected to the two electrode plates (31).

2. The cavity surface pretreatment device of a semiconductor laser according to claim 1, wherein: A linear module one (41) is fixed to the vacuum chamber (1). A material loading plate (4) is installed on the sliding seat of the linear module one (41). The sliding direction of the material loading plate (4) faces the loading and unloading door (11).

3. The cavity surface pretreatment device of a semiconductor laser according to claim 2, characterized in that: A linear module two (42) is fixed to the sliding seat of the linear module one (41). The material loading plate (4) is fixed to the sliding seat of the linear module two (42). The length directions of the linear module one (41) and the linear module two (42) are perpendicular to each other.

4. The cavity surface pretreatment device of a semiconductor laser according to claim 2, characterized in that: Positioning grooves (43) for placing materials are formed on the material loading plate (4). The top surface of the material is higher than the surface of the material loading plate (4).

5. The cavity surface pretreatment device of a semiconductor laser according to claim 1, characterized in that: Two partition plates (5) are slidably connected inside the vacuum chamber (1). The two partition plates (5) are symmetrically arranged and form a plate body that fits the bottom surface of the receiving cover (15) through sliding combination. A blowing port (51) is formed between the two partition plates (5).

6. The cavity surface pretreatment device of a semiconductor laser according to claim 5, characterized in that: A motor one (52) and a bidirectional lead screw (53) driven by the motor one (52) to rotate are fixed inside the vacuum chamber (1). The thread rotation directions at both ends of the bidirectional lead screw (53) are opposite. The two partition plates (5) are respectively threadedly connected to both ends of the bidirectional lead screw (53).

7. The cavity surface pretreatment device of a semiconductor laser according to claim 1, characterized in that: An observation port (16) is formed on the top surface of the vacuum chamber (1). An observation glass (17) is fixedly and hermetically arranged inside the observation port (16).

8. A method for preprocessing the cavity surface of a semiconductor laser, characterized in that: Using a cavity surface pretreatment device for a semiconductor laser as described in any one of claims 1 - 7, it includes the following steps: Step S1: Place the semiconductor laser on the material loading plate (4) and directly below the spongy palladium-rhodium alloy (3), and close the loading and unloading door (11). Step S2: Evacuate the inside of the vacuum chamber (1) until the vacuum pressure reaches the order of 5e-7 Torr. Step S3: Energize the spongy palladium-rhodium alloy (3) through the DC power supply (2) with a power of 800 - 1200 W. After maintaining the energized state for 3 - 5 min, introduce ammonia through the ammonia input pipe (13). Step S4: The ammonia molecules are ionized to form an ammonia ion cloud to clean the surface of the semiconductor laser, and the maintenance time is 10 - 30 min. Step S5: After the cleaning is completed, turn off the power and the gas supply, restore the normal pressure inside the vacuum chamber (1), discharge the waste gas inside the vacuum chamber (1), and take out the semiconductor laser.

9. A method for preprocessing the cavity surface of a semiconductor laser according to claim 8, characterized in that: The semiconductor laser is arranged 0.8 - 1.2 cm below the spongy palladium-rhodium alloy (3).

10. A method for preprocessing the cavity surface of a semiconductor laser according to claim 8, characterized in that: During the process of step S4, a purging step is also included: The first motor (52) operates to combine the two partitions (5) below the spongy palladium-rhodium alloy (3), enabling ammonia to only flow downward through the air blowing port (51). At the same time, the first linear module (41) and the second linear module (42) work, causing the semiconductor laser to move on the horizontal plane, making the air blowing port (51) sweep across different positions of the semiconductor laser. After completion, the first motor (52) rotates in reverse to move the two partitions (5) away from below the spongy palladium-rhodium alloy (3), and the material loading plate (4) resets to directly below the spongy palladium-rhodium alloy (3); The purging step is carried out once every 3 - 5 minutes.

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