Single wafer drying equipment and drying method

Abstract

The invention provides a single wafer drying treatment device, which belongs to the field of semiconductor manufacturing and comprises a rotary bearing table used for bearing and driving a wafer to rotate; the liquid nozzle is used for spraying a drying solution to the surface of the wafer; the first gas nozzle is used for blowing dry gas to the surface of the wafer; the second gas nozzle is used for blowing dry gas to the surface of the wafer; the controller is configured to control the liquid applying point of the liquid nozzle and the gas applying points of the first gas nozzle and the second gas nozzle to sequentially move from the circle center of the wafer to the edge of the wafer after the drying solution sprayed to the surface of the wafer by the liquid nozzle forms a complete liquid film on the surface of the wafer; and when the gas attachment points of the first gas nozzle and the second gas nozzle sequentially pass through the circle center of the wafer, the first gas nozzle and the second gas nozzle sequentially start to purge the drying gas to the surface of the wafer to replace the drying solution so as to dry the wafer.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and particularly to a single-wafer drying device and a drying method. Background Art

[0002] In the semiconductor wet cleaning process, drying is a crucial step, and the quality of drying directly affects the cleanliness, defect rate of the wafer surface, and the stability of subsequent processes.

[0003] Currently, for the wafer drying process after the single-wafer wet process, isopropyl alcohol (IPA) drying is mainly used. An IPA solution is sprayed on the surface of the rotating wafer, and nitrogen purging is combined. The IPA solution is used to carry away the residual moisture on the wafer surface. In the existing drying method, the nitrogen nozzle sprays directly towards the central area of the wafer. To avoid excessive nitrogen flow at the center of the wafer causing splashing, the nitrogen flow rate ejected from the nitrogen nozzle at the center position of the wafer is small. During the process of the nitrogen nozzle moving from the center position of the wafer to the edge of the wafer, the nitrogen flow rate gradually increases. Such a process solves the problem of central splashing, but it will result in a small nitrogen flow rate in the central area of the wafer where the liquid film is thicker, and central annular defects are likely to occur in the central area of the wafer due to weak drying, and there is also a problem of low drying efficiency.

[0004] How to improve the drying quality of the central area of the wafer and the overall drying efficiency is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the problems existing in the prior art, the present application provides a wafer drying device, including: A rotating carrier for carrying and driving the wafer to rotate; A liquid nozzle for spraying a drying solution onto the wafer surface; A first gas nozzle for blowing a drying gas onto the wafer surface; A second gas nozzle for blowing the drying gas onto the wafer surface; A controller configured to: when the drying solution sprayed by the liquid nozzle onto the wafer surface forms a complete liquid film on the wafer surface, control the liquid application point of the liquid nozzle, and the gas application points of the first gas nozzle and the second gas nozzle to move sequentially from the center of the wafer to the edge of the wafer; when the gas application points of the first gas nozzle and the second gas nozzle pass through the center of the wafer in sequence, control the first gas nozzle and the second gas nozzle to start purging the drying gas onto the wafer surface in sequence to displace the drying solution, so as to dry the wafer.

[0006] According to the single-wafer drying processing equipment provided by the present application, the drying gas blowing volume of the first gas nozzle and the second gas nozzle is the smallest at the center of the wafer circle and the largest at the edge of the wafer.

[0007] According to the single-wafer drying processing equipment provided by the present application, during the process that the gas-impinging points of the first gas nozzle and the second gas nozzle move from the center of the wafer circle to the edge of the wafer, the drying gas blowing volume of the first gas nozzle and the second gas nozzle gradually increases.

[0008] According to the single-wafer drying processing equipment provided by the present application, the drying gas blowing volume of the second gas nozzle at the center of the wafer circle is greater than or equal to that of the first gas nozzle at the center of the wafer circle and less than the drying gas blowing volume that causes splashing at the center of the wafer circle.

[0009] According to the single-wafer drying processing equipment provided by the present application, the drying processing equipment further includes: A first rotating shaft; A first swing arm, one end of which is drivingly connected to the first rotating shaft and the other end is a free end. The first rotating shaft is used to drive the first swing arm to swing on the surface of the wafer with the first rotating shaft as the pivot point; Wherein, the liquid nozzle, the first gas nozzle and the second gas nozzle are arranged at the free end of the first swing arm, and a liquid pipeline, a first gas pipeline and a second gas pipeline respectively connected to the liquid nozzle, the first gas nozzle and the second gas nozzle are further arranged inside the first swing arm.

[0010] According to the single-wafer drying processing equipment provided by the present application, both the first gas nozzle and the second gas nozzle are perpendicular to the surface of the wafer.

[0011] According to the single-wafer drying processing equipment provided by the present application, the first gas nozzle is perpendicular to the surface of the wafer, and the second gas nozzle has a first included angle with the surface of the wafer, and the first included angle is less than 90°.

[0012] The present application also provides a single-wafer drying processing method, including: Placing the wafer on a rotating carrier table and driving the wafer to rotate through the rotating carrier table; Spraying a drying solution onto the center of the wafer until a complete liquid film is formed on the surface of the wafer; Move the liquid nozzle, the first gas nozzle, and the second gas nozzle so that the liquid landing point of the liquid nozzle, the gas landing points of the first gas nozzle and the second gas nozzle sequentially move from the center of the wafer to the edge of the wafer. When the gas landing points of the first gas nozzle and the second gas nozzle pass through the center of the wafer, start purging dry gas onto the wafer surface through the first gas nozzle and the second gas nozzle in sequence.

[0013] According to the single-wafer drying process method provided by the present application, the dry gas purging amount of the first gas nozzle and the second gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer.

[0014] According to the single-wafer drying process method provided by the present application, the dry gas purging amount of the second gas nozzle at the center of the wafer is greater than or equal to the dry gas purging amount of the first gas nozzle at the center of the wafer, and less than the dry gas purging amount that causes splashing at the center of the wafer.

[0015] According to the single-wafer drying process method provided by the present application, the first gas nozzle is perpendicular to the wafer surface, and the second gas nozzle forms a first included angle with the wafer surface, and the first included angle is less than 90°.

[0016] According to the single-wafer drying process method provided by the present application, the moving paths of the liquid nozzle, the first gas nozzle, and the second gas nozzle overlap.

[0017] According to the single-wafer drying process method provided by the present application, the moving path of the liquid nozzle and the first gas nozzle is the first path, the moving path of the second gas nozzle is the second path, and the first path and the second path do not overlap.

[0018] According to the single-wafer drying process method provided by the present application, the first path and the second path are symmetrically arranged about the center of the wafer.

[0019] According to the single-wafer drying process method provided by the present application, the dry gas is nitrogen or an inert gas.

[0020] The present application also provides a single-wafer drying process method, including: Place the wafer on a rotating carrier table and drive the wafer to rotate through the rotating carrier table; Spray a solution onto the center of the wafer until a liquid film is formed on the entire wafer surface; Move the liquid nozzle and the first gas nozzle so that the liquid landing point of the liquid nozzle and the gas landing point of the first gas nozzle sequentially move from the center of the wafer to the edge of the wafer. After the gas landing point of the first gas nozzle moves away from the center of the wafer, the second gas nozzle starts to continuously purge dry gas towards the center of the wafer until the first gas nozzle moves to the edge of the wafer.

[0021] According to the single-wafer drying processing method provided by the present application, the purge volume of the dry gas of the first gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer.

[0022] The single-wafer drying processing equipment provided by the present application includes a rotating carrier for carrying and driving the wafer to rotate, a liquid nozzle for spraying a dry solution onto the wafer surface, a first gas nozzle and a second gas nozzle for blowing dry gas onto the wafer surface, and a controller configured to, after a complete liquid film is formed on the wafer surface, control the liquid landing point of the liquid nozzle, the gas landing points of the first gas nozzle and the second gas nozzle to move from the center of the wafer to the edge of the wafer. When the first gas nozzle and the second gas nozzle sequentially pass through the center of the wafer, they sequentially start to purge dry gas onto the wafer surface to displace the liquid film and dry the wafer. When the gas landing point of the second gas nozzle passes through the center of the wafer, it starts to purge dry gas towards the center of the wafer to assist in drying the center area of the wafer, avoiding annular defects in the center area of the wafer due to insufficient drying, and at the same time improving the drying efficiency of the single wafer. Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0024] Figure 1 is a schematic structural diagram of a single-wafer drying device according to an embodiment of the present application; Figure 2 is a top view of a single-wafer drying device according to an embodiment of the present application; Figure 3 is a schematic diagram showing the change of nitrogen purge volume with position according to an embodiment of the present application; Figure 4 is a side view of a single-wafer drying device according to an embodiment of the present application; Figure 5 is a schematic flowchart of a single-wafer drying processing method according to an embodiment of the present application; Figure 6 、 7It is a top view of a single-wafer drying device according to another embodiment of the present application; Figure 8 It is a schematic flow chart of a single-wafer drying process method according to another embodiment of the present application; Figure 9 It is a top view of a single-wafer drying device according to another embodiment of the present application; Figure 10 It is a schematic flow chart of a single-wafer drying process method according to another embodiment of the present application; Figure 11 It is a side view of a single-wafer drying device according to another embodiment of the present application. Detailed implementation manners

[0025] To make the objectives, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings in the present application. Apparently, the described embodiments are some but not all of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0026] Refer to Figures 1 - 2 , the single-wafer drying device of the embodiment of the present application includes a rotating carrier 10, a first swing arm 11, a first gas pipeline 12, a second gas pipeline 13, a liquid pipeline 14, a driver (not shown in the figure) and a controller (not shown in the figure). The rotating carrier 10 is used to place the wafer w and drive the wafer w to rotate. The outlet end of the first gas pipeline 12 communicates with the first gas nozzle 15; the outlet end of the second gas pipeline 13 communicates with the second gas nozzle 16; the liquid outlet of the liquid pipeline 14 communicates with the liquid nozzle 17. The first swing arm 11 is arranged above the rotating carrier 10. One end of the first swing arm 11 is connected to the first rotating shaft 18, and the other end is a free end, and rotates around the first rotating shaft 18 under the drive of the driver. The controller is electrically connected to the first gas nozzle 15 and the second gas nozzle 16, and is used to control the opening time of the first gas nozzle 15 and the second gas nozzle 16 and the nitrogen flow rate sprayed. The driver can be a driving motor for controlling the rotation of the first swing arm.

[0027] In the embodiment of the present application, along the moving direction of the first swing arm 11, the liquid pipeline 14, the first gas pipeline 12 and the second gas pipeline 13 are sequentially arranged side by side on the first swing arm 11, and the liquid nozzle 17, the first gas nozzle 15 and the second gas nozzle 16 are arranged at the free end of the first swing arm 11.

[0028] At the start of the drying process, the first swing arm 11 moves above the wafer and rotates around the first rotation axis 18 along the path from the center of the wafer to the edge of the wafer. That is, the first swing arm 11 drives the liquid nozzle 17, the first gas nozzle 15, and the second gas nozzle 16 to move from the center of the wafer to the edge of the wafer, covering the film and purging the surface of the wafer. The moving path is Figure 2 the first path A shown, which appears as an arc path on the surface of the wafer. When the liquid landing point of the liquid nozzle 17 is at the center of the wafer, the drying solution is started to be sprayed onto the surface of the wafer. The drying solution can be an IPA solution, forming an IPA liquid film on the surface of the wafer. When the first swing arm 11 reaches the edge of the wafer, the liquid nozzle 17 stops spraying liquid. Since along the moving direction of the first swing arm 11, the liquid nozzle 17, the first gas nozzle 15, and the second gas nozzle 16 are arranged side by side in sequence at the free end of the first swing arm 11. Therefore, when the first swing arm 11 rotates, the liquid nozzle 17, the first gas nozzle 15, and the second gas nozzle 16 pass through the center of the wafer in sequence.

[0029] It should be noted that the liquid nozzle 17 is used to spray the IPA solution onto the surface of the wafer. In order to make the IPA solution form a uniform liquid film on the surface of the wafer, when the liquid nozzle 17 is above the center of the wafer, the liquid starts to flow out. The first swing arm 11 first remains stationary until a uniform IPA liquid film is formed on the entire surface of the wafer, and then the first swing arm 11 starts to rotate along the path from the center of the wafer to the edge of the wafer. The first gas nozzle 15 and the second gas nozzle 16 start to purge nitrogen onto the surface of the wafer in sequence when they reach directly above the center of the wafer. That is, the opening time of the first gas nozzle 15 is later than that of the liquid nozzle 17, and the opening time of the second gas nozzle 16 is later than that of the first gas nozzle 15. Here, the opening times of the first gas nozzle 15 and the second gas nozzle 16 are controlled by a controller.

[0030] In some embodiments, based on the spraying time and liquid supply flow rate of the liquid nozzle 17, it is determined whether a complete IPA liquid film is formed on the surface of the wafer. The specific method is not limited here.

[0031] It should be noted that when the liquid nozzle 17 starts to spray the IPA solution onto the surface of the wafer, the liquid nozzle 17 is above the center of the wafer. Affected by the centrifugal force of the rotation of the wafer, the IPA liquid film in the central area of the wafer is thicker than that in the edge area of the wafer. In order to avoid the problem of liquid splashing caused by too large a nitrogen purging flow rate, the nitrogen flow rate blown by the first gas nozzle 15 onto the surface of the wafer is different in the central area and the edge area of the wafer. For the central area of the wafer where the IPA liquid film is thicker, the nitrogen flow rate blown by the first gas nozzle 15 is smaller. During the process of the first swing arm 11 moving towards the edge of the wafer, the nitrogen flow rate blown by the first gas nozzle 15 gradually increases.

[0032] Reference Figure 3, taking a 300 mm wafer as an example, during the process of the first swing arm 11 moving from the wafer center to the wafer edge, the nitrogen flow rate blown by the first gas nozzle 15 onto the wafer surface gradually increases. At the wafer center, that is, Figure 3 at the position where the abscissa is 0 in Figure 3 , the nitrogen flow rate blown by the first gas nozzle 15 is the smallest, which is 5 L / Min; it gradually increases during the process of the first swing arm 11 moving to the wafer edge. For example, when the first swing arm 11 moves to the wafer edge, that is, at the position where the abscissa is -150, the nitrogen flow rate blown by the first gas nozzle 15 is the largest, which is 25 L / Min. That is, the first gas nozzle 15 blows nitrogen at the first flow rate at the wafer center and at the second flow rate at the wafer edge, and the first flow rate is less than the second flow rate.

[0033] Although the first gas nozzle 15 will not cause splashing in the central area, it may cause central annular defects. Adding a second gas nozzle 16 on the moving path of the first gas nozzle 15 can supplement the drying of the wafer central area, so that for each liquid landing point covered by the moving path A on the wafer, after the first nitrogen purge by the first nozzle 15, it is then purged a second time by the second nozzle 16. The two purges not only ensure the nitrogen purge volume but also solve the problem of central splashing.

[0034] In some embodiments, to optimize the effect of the second nitrogen purge, the nitrogen purge flow rate of the second gas nozzle 16 in the wafer central area is greater than or equal to the nitrogen purge flow rate of the first gas nozzle 15 in the wafer central area. On the other hand, the nitrogen purge flow rate needs to be controlled within the range where no splashing occurs on the wafer surface.

[0035] It should be noted that in order to keep the IPA liquid film formed on the wafer surface from splashing under nitrogen purge, when the first gas nozzle sprays nitrogen onto the wafer surface, it is necessary to ensure that the nitrogen purge flow rate does not cause splashing on the wafer surface. And to optimize the drying effect of the area with a relatively thick IPA liquid film in the wafer central area, a second gas nozzle is used for supplementary drying. Therefore, the nitrogen purge flow rate of the second gas nozzle is greater than or equal to the purge flow rate of the first gas nozzle in the wafer central area, but the same also needs to ensure that the nitrogen purge flow rate of the second gas nozzle does not cause splashing on the wafer surface.

[0036] In some embodiments, during the process of the first swing arm 11 moving from the wafer center to the wafer edge, the nitrogen flow rate blown by the second gas nozzle 16 onto the wafer surface gradually increases. The flow rates of nitrogen blown by the first gas nozzle 15 and the second gas nozzle 16 are both controlled by a controller.

[0037] Refer to Figure 4, in some embodiments, the first gas nozzle 15 is perpendicular to the wafer surface, while the second gas nozzle 16 is not perpendicular to the wafer w surface, that is, there is a first included angle α between the straight line where the second gas nozzle 16 is located and the wafer surface, and the first included angle is less than 90°.

[0038] It should be noted that the second gas nozzle 16 is inclined, which can increase the contact area between the region with a thicker IPA liquid film in the center area of the wafer and the nitrogen gas ejected from the second gas nozzle 16, making it easier for the nitrogen gas ejected from the second gas nozzle 16 to blow the IPA liquid film towards the wafer edge. Therefore, the inclination direction of the second gas nozzle 16 is towards the wafer edge. In this case, the opening time of the second gas nozzle 16 is when the straight line where the second gas nozzle 16 is located passes through the center of the circle, that is, when the gas hitting point of the nitrogen gas ejected from the second nozzle 16 is located at the center of the wafer circle, the second gas nozzle 16 is opened.

[0039] In the embodiment of the present application, in the wafer drying equipment, a new gas pipeline, that is, the second gas pipeline 13, is added to the first swing arm 11. The moving path of the second gas pipeline 13 on the wafer surface is the same as that of the first gas pipeline 12, that is, it blows from the center of the wafer circle to the wafer edge. After forming an IPA liquid film on the wafer surface, the newly added second gas pipeline 13 blows nitrogen gas on the wafer surface along the same path after the first gas pipeline 12 blows nitrogen gas on the wafer surface to achieve auxiliary drying, solving the problem of dry center ring-shaped defects caused by weak drying in the center area of the wafer.

[0040] In some embodiments, the gas jetting method of the second gas nozzle 16 blowing nitrogen gas towards the wafer surface is oblique jetting. The contact area between the oblique jetting gas and the IPA liquid film at the position where the IPA liquid film is thicker in the center area of the wafer is larger than that of the vertical gas and the IPA liquid film, which is more likely to promote the replacement of the IPA liquid film on the wafer surface and improve the drying efficiency of the wafer drying equipment.

[0041] Reference Figure 5 , the embodiment of the present application also provides a single-wafer drying processing method, including: S11. Place the wafer on the rotating carrier, and the rotating carrier drives the wafer to rotate; S!2. Spray IPA solution towards the center of the wafer circle for a certain period of time until an IPA liquid film is formed on the entire wafer surface; S13. Move the liquid nozzle, the first gas nozzle, and the second gas nozzle so that the liquid landing point of the liquid nozzle and the gas landing points of the first gas nozzle and the second gas nozzle sequentially move from the center of the wafer to the edge of the wafer. When the gas landing points of the first gas nozzle and the second gas nozzle sequentially pass through the center of the wafer, the first gas nozzle and the second gas nozzle sequentially start to purge nitrogen gas onto the wafer surface. Among them, the nitrogen purge flow rate of the first gas nozzle and the second gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer. The moving paths of the liquid nozzle, the first gas nozzle, and the second gas nozzle overlap.

[0042] In some embodiments, in step S13, both the first gas nozzle and the second gas nozzle are vertically arranged with respect to the wafer surface.

[0043] In some embodiments, the first gas nozzle in step S13 is perpendicular to the wafer surface, while the second gas nozzle is inclined towards the edge of the wafer. The gas sprayed obliquely has a larger contact area with the IPA liquid film at the position where the IPA liquid film is thicker in the central area of the wafer compared to the vertically sprayed gas, making it easier to push the replacement of the IPA liquid film on the wafer surface and improving the drying efficiency of the wafer drying equipment.

[0044] Reference Figure 6 , in another embodiment, the single-wafer drying equipment further includes a second swing arm 21 and a second rotating shaft 22. The second swing arm 21 is arranged above the rotating carrier 10, one end is connected to the second rotating shaft 22, and the other end is a free end. The second swing arm 21 rotates around the second rotating shaft 22 under the drive of a driver.

[0045] Different from the previous embodiments, the second gas pipeline 13 is not arranged on the first swing arm 11 but is separately arranged on the second swing arm 21. The second gas nozzle 16 is arranged at the free end of the second swing arm 21, and the second gas nozzle 16 is perpendicular to the wafer surface.

[0046] The moving path of the second swing arm 21 is different from that of the first swing arm 11. At the start of the drying process, the second gas nozzle 16 is located at Figure 6 the waiting position B shown, and the waiting position is any point above the wafer that is not at the center of the wafer and not on the first path A where the first swing arm 11 moves.

[0047] Reference Figure 7 , after the first swing arm 11 moves away from the center of the wafer, the second swing arm 21 moves above the center of the wafer and remains stationary, so that the second gas nozzle 16 is located directly above the center of the wafer and starts to continuously jet gas onto the wafer surface at the first flow rate, and stops jetting when the first swing arm 11 reaches the edge of the wafer. In this embodiment, after the first swing arm 11 leaves the center of the wafer, the second swing arm 21 moves above the center of the wafer, that is, the opening time of the second gas nozzle 16 is also later than the opening time of the first gas nozzle 15.

[0048] Reference Figure 11 Figure 11 , in some embodiments, the second gas nozzle 16 at the free end of the second swing arm 21 is not perpendicular to the wafer surface. There is a first included angle β between the line where the second gas nozzle 16 is located and the wafer surface, and the first included angle is less than 90°. The line where the second gas nozzle 16 is located passes through the center of the wafer. Similarly, the purpose of the inclined setting of the second gas nozzle 16 is to promote the faster replacement of the IPA liquid film on the wafer surface. Therefore, the second gas nozzle 16 is inclined towards the wafer edge.

[0049] In this embodiment, the newly added second gas pipeline is arranged on the second swing arm. The second swing arm moves after the drying process starts, so that the gas hitting point of the second gas nozzle is at the center of the wafer, and a fixed spray is performed on the center area of the wafer for a period of time, improving the drying defects in the center area of the wafer and enhancing the wafer yield.

[0050] Reference Figure 8 Figure 8 , the embodiment of the present application also provides a single-wafer drying processing method, including: S21. Place the wafer on the rotating carrier table, and the rotating carrier table drives the wafer to rotate; S22. Spray IPA solution towards the center of the wafer for a certain period of time until an IPA liquid film is formed on the entire wafer surface; S23. Move the liquid nozzle and the first gas nozzle so that the liquid hitting point of the liquid nozzle and the gas hitting point of the first gas nozzle move from the center of the wafer to the wafer edge in sequence. After the gas hitting point of the second gas nozzle leaves the center of the wafer, the second gas nozzle starts to continuously spray nitrogen towards the center of the wafer until the first gas nozzle reaches the wafer edge. Among them, the nitrogen purge flow rate of the first gas nozzle is the smallest at the center of the wafer and the largest at the wafer edge.

[0051] In some embodiments, in step S23, during the process of the first gas nozzle moving from the center of the wafer to the wafer edge, the nitrogen purge flow rate of the first gas nozzle gradually increases.

[0052] In some embodiments, in step S23, the moving paths of the liquid nozzle and the first gas nozzle overlap.

[0053] Reference Figure 9, in yet another embodiment, the movement path of the second swing arm 21 is different from that of the previous embodiment. At the start of the drying process, the second swing arm 21 is in the waiting position B. When the first swing arm 11 leaves the center of the wafer, move the second swing arm 21 so that the gas impingement point of the second gas nozzle 16 is located at the center of the wafer, and start blowing nitrogen gas onto the wafer surface. Then, the second swing arm 21 starts to rotate around the second rotation axis 22, driving the gas impingement point of the second gas nozzle 16 to move from the center of the wafer to the edge of the wafer. The movement path is the second path C, which appears as an arc path on the wafer surface.

[0054] Similar to the previous embodiment, during the movement of the second gas nozzle 16 from the center of the wafer to the edge of the wafer, the nitrogen gas flow rate blown onto the wafer surface gradually increases, that is, the nitrogen gas flow rate blown by the second gas nozzle 16 at the center of the wafer is less than the nitrogen gas flow rate blown by the second gas nozzle 16 at the edge of the wafer.

[0055] It should be noted that the first path A and the second path C do not coincide. Considering the uniformity of the wafer surface drying process, the first path A and the second path C are symmetrically arranged with the center of the wafer as the center.

[0056] The second gas nozzle 16 can be set perpendicular or non-perpendicular to the wafer surface, and preferably in the form of inclined nitrogen gas spraying. That is, the second gas nozzle 16 is inclined towards the edge of the wafer, so that the contact surface between the nitrogen gas blown by the second gas nozzle 16 and the IPA liquid film on the wafer surface is larger, and it is easier to promote the replacement of the IPA liquid film. The inclined nitrogen gas spraying method meets the enhanced demand for drying under higher aspect ratios in advanced manufacturing, is beneficial to drying the IPA in the high aspect ratio pattern, and improves the drying ability of the machine.

[0057] In this embodiment, the newly added second gas nozzle is arranged on the second swing arm, and in the wafer drying process, after the second swing arm moves to the position above the center of the wafer, it does not remain stationary, but like the first swing arm, has a movement path, that is, it moves from the center of the wafer to the edge of the wafer, purging the IPA liquid film formed on the wafer surface, improving the drying efficiency of the wafer while optimizing the drying defects in the center area of the wafer.

[0058] Reference Figure 10 , the embodiment of the present application also provides a single-wafer drying processing method, including: S31. Place the wafer on the rotating carrier table, and the rotating carrier table drives the wafer to rotate; S32. Spray IPA solution at the center of the wafer for a certain period of time until an IPA liquid film is formed on the entire wafer surface; S33. Move the liquid nozzle, the first gas nozzle, and the second gas nozzle so that the liquid landing point of the liquid nozzle, the gas landing points of the first gas nozzle and the second gas nozzle move from the center of the wafer to the edge of the wafer in sequence. When the gas landing points of the first gas nozzle and the second gas nozzle pass through the center of the wafer in sequence, the first gas nozzle and the second gas nozzle start to purge nitrogen gas onto the wafer surface in sequence. Among them, the nitrogen purge flow rate of the first gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer. The moving paths of the liquid nozzle and the first gas nozzle overlap, and the moving path of the second gas nozzle does not overlap with the moving paths of the liquid nozzle and the first gas nozzle.

[0059] In some embodiments, the moving path of the second gas nozzle is centrosymmetrically arranged with respect to the moving paths of the liquid nozzle and the first gas nozzle. In some embodiments, in step S33, the first gas nozzle and the second gas nozzle are arranged perpendicular to the wafer surface.

[0060] In some embodiments, the first gas nozzle remains perpendicular to the wafer surface, while the second gas nozzle in step S33 is inclined towards the edge of the wafer.

[0061] It should be noted that in the above embodiments, the dry gas purged onto the wafer surface by the first gas nozzle and the second gas nozzle can be nitrogen gas or an inert gas.

[0062] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. The terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise stated, the meaning of "plurality" is two or more.

[0063] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "mounted", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0064] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any one or more embodiments or examples in a suitable manner.

[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A single-wafer drying processing device, characterized in that, Comprising: A rotating carrier table for carrying and driving a wafer to rotate; A liquid nozzle for spraying a drying solution onto the surface of the wafer; A first gas nozzle for blowing a drying gas onto the surface of the wafer; A second gas nozzle for blowing the drying gas onto the surface of the wafer; A controller configured to: after the drying solution sprayed by the liquid nozzle onto the surface of the wafer forms a complete liquid film on the surface of the wafer, control the liquid landing point of the liquid nozzle, the gas landing points of the first gas nozzle and the second gas nozzle to move sequentially from the center of the wafer to the edge of the wafer; when the gas landing points of the first gas nozzle and the second gas nozzle pass through the center of the wafer in sequence, control the first gas nozzle and the second gas nozzle to start purging the drying gas onto the surface of the wafer in sequence to displace the drying solution, so as to dry the wafer.

2. The single-wafer drying processing equipment according to claim 1, wherein The drying gas purge amount of the first gas nozzle and the second gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer.

3. The single-wafer drying processing equipment according to claim 2, characterized in that During the process of the gas landing points of the first gas nozzle and the second gas nozzle moving from the center of the wafer to the edge of the wafer, the drying gas purge amount of the first gas nozzle and the second gas nozzle gradually increases.

4. The single-wafer drying processing equipment according to claim 2, characterized in that, The drying gas purge amount of the second gas nozzle at the center of the wafer is greater than or equal to the drying gas purge amount of the first gas nozzle at the center of the wafer, and less than the drying gas purge amount that causes splashing at the center of the wafer.

5. The single-wafer drying processing equipment according to claim 1, characterized in that, The drying processing equipment further comprises: A first rotating shaft; A first swing arm, one end of which is drivingly connected to the first rotating shaft and the other end is a free end, and the first rotating shaft is used to drive the first swing arm to swing on the surface of the wafer with the first rotating shaft as a pivot point; Wherein, the liquid nozzle, the first gas nozzle and the second gas nozzle are arranged at the free end of the first swing arm, and a liquid pipeline, a first gas pipeline and a second gas pipeline respectively connected to the liquid nozzle, the first gas nozzle and the second gas nozzle are further arranged inside the first swing arm.

6. The single-wafer drying processing equipment according to claim 1, characterized in that, Both the first gas nozzle and the second gas nozzle are perpendicular to the surface of the wafer.

7. The single-wafer drying processing equipment according to claim 1, characterized in that, The first gas nozzle is perpendicular to the surface of the wafer, and the second gas nozzle forms a first included angle with the surface of the wafer, and the first included angle is less than 90°.

8. A method for drying a single-wafer, characterized in that, Comprising: Place the wafer on the rotating carrier table and drive the wafer to rotate through the rotating carrier table; Spray the drying solution towards the center of the wafer until a complete liquid film is formed on the surface of the wafer; Move the liquid nozzle, the first gas nozzle and the second gas nozzle so that the liquid landing point of the liquid nozzle, the gas landing points of the first gas nozzle and the second gas nozzle move sequentially from the center of the wafer to the edge of the wafer, and when the gas landing points of the first gas nozzle and the second gas nozzle pass through the center of the wafer, start purging the drying gas onto the surface of the wafer through the first gas nozzle and the second gas nozzle in sequence.

9. The single-wafer drying process according to claim 8, characterized in that, The drying gas purge amount of the first gas nozzle and the second gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer.

10. The monolithic wafer drying process according to claim 9, characterized in that, The dry gas purge volume of the second gas nozzle at the center of the wafer is greater than or equal to the dry gas purge volume of the first gas nozzle at the center of the wafer, and less than the dry gas purge volume that causes splashing at the center of the wafer.

11. The monolithic wafer drying treatment method according to claim 8, wherein The first gas nozzle is perpendicular to the wafer surface, and the second gas nozzle forms a first angle with the wafer surface, and the first angle is less than 90°.

12. The monolithic wafer drying process according to claim 8, characterized in that, The moving paths of the liquid nozzle, the first gas nozzle, and the second gas nozzle overlap.

13. The single-wafer drying process according to claim 8, characterized in that, The moving paths of the liquid nozzle and the first gas nozzle are the first path, the moving path of the second gas nozzle is the second path, and the first path and the second path do not overlap.

14. The single-wafer drying method according to claim 13, wherein The first path and the second path are symmetrically arranged about the center of the wafer.

15. The single-wafer drying process according to claim 8, wherein The dry gas is nitrogen or an inert gas.

16. A method for drying a single wafer, characterized in that, Including: Placing the wafer on a rotating carrier table and driving the wafer to rotate through the rotating carrier table; Spraying a solution onto the center of the wafer until a liquid film is formed on the entire wafer surface; Moving the liquid nozzle and the first gas nozzle so that the liquid landing point of the liquid nozzle and the gas landing point of the first gas nozzle sequentially move from the center of the wafer to the edge of the wafer. After the gas landing point of the first gas nozzle moves away from the center of the wafer, the second gas nozzle starts to continuously purge dry gas towards the center of the wafer until the first gas nozzle moves to the edge of the wafer.

17. The single-wafer drying method according to claim 16, characterized in that, The dry gas purge volume of the first gas nozzle is the smallest at the center of the wafer and the largest at the edge of the wafer.

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