Wafer surface residue detection device and cleaning method

Abstract

The invention discloses a wafer surface residue detection device and a cleaning method, the detection device comprises an electric detection device and a plurality of detection probes, any two detection probes cooperate to form a detection unit, and the detection end of the detection unit is in contact with a plating layer area to output a first current signal; the detection ends of the detection units make contact with the edge removing area to output second current signals. The invention discloses a cleaning method. Controlling the plurality of detection probes to pass through the edge removing area on the surface of the wafer in a reciprocating manner; judging whether residues exist or not; when residues exist, the motion step length is reduced, the residues are passed back and forth, and a current signal and a resistance value signal are output; the control system receives the current signal, judges the position of the residue and calculates the height of the residue; and cleaning the edge-removed area again according to the position and the height until no residue exists. According to the invention, the image and height of the residue in the edge removal area can be determined, and cleaning is continued, so that the problems that other areas are polluted and the performance and reliability of the device are influenced due to residue falling are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processes, and in particular, to a detection device and a cleaning method for residues on the surface of a wafer. Background Art

[0002] In the process of semiconductor manufacturing, especially in the copper electroplating process, thorough edge bead removal (EBR) and its detection are crucial. Edge bead removal can remove unnecessary metal deposits on the wafer edge, prevent short circuits and contamination, ensure surface flatness, improve electrical performance and product reliability, and at the same time meet industry standards.

[0003] In the prior art, the edge bead removal effect of the wafer is only obtained by optical detection to get the edge bead removal width. Although this method can provide certain visual information, it cannot accurately determine whether the copper has been completely removed. Optical detection can only observe the physical changes on the surface, and it is often difficult to detect the remaining copper; this may lead to potential short - circuit risks, contamination problems or a decline in electrical performance in subsequent processes, thereby affecting the overall quality and reliability of semiconductor devices.

[0004] Therefore, it is necessary to provide a new detection device and cleaning method for residues on the surface of a wafer to solve the above - mentioned problems existing in the prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a detection device and a cleaning method for residues on the surface of a wafer, which are used to detect whether there are residues in the edge - removed area of the wafer, can accurately determine the image and height of the residues in the edge - removed area, and continue cleaning according to the image and height to improve the problem that the residues fall off and cause pollution to other areas, affecting the performance and reliability of the device.

[0006] To achieve the above - mentioned purpose, the technical solution of the present invention is as follows: A detection device for residues on the surface of a wafer, the surface of the wafer includes a plating area and an edge - removed area, and the edge - removed area surrounds the plating area; the detection device includes: An electrical detection device for providing voltage; A plurality of detection probes, each detection probe has a detection end with an arc - shaped setting, and any two detection probes cooperate to form a detection unit, and each detection unit is electrically connected to the electrical detection device; the detection end of the detection unit contacts the plating area and / or the edge - removed area, and the electrical detection device provides voltage to the detection unit to form an electrical circuit between the electrical detection device, the detection unit and the wafer; the electrical detection device outputs the current signal detected by the detection probe. When the detection ends of the detection units are all in contact with the plating area, the electrical detection device outputs a first current signal; When the detection ends of the detection units are all in contact with the edge-removing area, the electrical detection device outputs a second current signal; In the edge-removing area, when the electrical detection device keeps outputting the first current signal, the edge-removing area is covered by residues; when the second current signal increases, part of the edge-removing area is covered by the residues; when the electrical detection device keeps outputting the second current signal, there are no residues in the edge-removing area.

[0007] A cleaning method for residues on the surface of a wafer, which performs cleaning according to the detection results of a detection device, the cleaning method comprising: Controlling a plurality of the detection probes to reciprocate on the surface of the wafer, so that the plurality of detection probes reciprocate through the edge-removing area, and the intervals of the movement trajectories of the plurality of detection probes each time are the same; The electrical detection device outputs the current signals generated by the plurality of detection probes during the movement as a first current signal or a second current signal, and determines whether there are residues in the edge-removing area according to the intensity changes of the first current signal and the second current signal; When there are residues in the edge-removing area, controlling the step lengths of the plurality of detection probes moving on the movement trajectories to decrease, and controlling the intervals of the movement trajectories of the plurality of detection probes to decrease, so that the plurality of detection probes reciprocate through the residues, and the electrical detection device outputs current signals and resistance value signals during the movement; The control system receives the current signals and determines the positions of the residues according to the intensity changes of the current signals; The control system receives the resistance value signals and calculates the heights of the residues; Cleaning the edge-removing area again according to the positions and heights of the residues; Repeating the above steps until there are no residues in the edge-removing area.

[0008] By adopting the above technical solution, multiple detection probes cooperate to move on the surface of the wafer and repeatedly pass through the edge-trimmed area. During this process, the detection probes cooperate in pairs to form detection units, which can output the change of current signals during the movement. According to these current signals, it is possible to accurately judge whether there are copper material residues in the edge-trimmed area. When residues are detected in the edge-trimmed area during the movement, the intervals of the movement trajectories of the detection probes and the step lengths of the movement on each movement trajectory are adjusted, so that the multiple detection probes cover the residue area with higher precision, further improving the detection accuracy. The control system then accurately determines the boundary of the residue based on the intensity change of the current signal, and can calculate the height of the residue by combining the resistance value signal calculation. Finally, according to the position and image information of the residue, the edge-trimmed area is specifically cleaned again until the residues are completely removed. Thereby effectively avoiding the shedding of residues in subsequent processing steps, preventing the contamination of other areas, and ensuring that the device performance and reliability are not affected.

[0009] Optionally, it further includes: A positioning member for fixing the multiple detection probes; the multiple detection probes are distributed at intervals along a straight line on the positioning member, and the intervals between every two adjacent detection probes are the same.

[0010] Optionally, the detection probe includes: A fixing member with a mounting hole at one end and fixedly arranged on the positioning member at the other end; A moving member with one end movably arranged in the mounting hole and the other end being the detection end; An elastic member arranged in the mounting hole and in contact with the moving member to push the moving member to move, so that the detection end contacts the plating area and / or the edge-trimmed area; A detection member arranged on the elastic member and electrically connected to the electrical detection device. The detection member generates a resistance value signal when the elastic member deforms, and the electrical detection device receives and outputs the resistance value signal, and calculates the deformation distance of the elastic member according to the change of the resistance value signal; When the detection end contacts the plating area, the electrical detection device outputs a first resistance value signal; When the detection end contacts the edge-trimmed area, the electrical detection device outputs a second resistance value signal.

[0011] Optionally, when the control system receives the resistance value signal and calculates the height of the residue, it includes: Calculating the height H of the residue according to the following formula:

[0012] Wherein, ΔR is the change in the resistance of the detection component; R is the original resistance value of the detection component; G is the sensitivity coefficient of the detection component; L is the original length of the elastic component.

[0013] Optionally, the electrical detection device outputs the current signals generated by the plurality of detection probes during movement as a first current signal or a second current signal, and determining whether there is a residue in the deburred area according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes to move from the plating area to the deburred area. During the movement, the electrical detection device keeps outputting the first current signal until the electrical detection device outputs no current signal; the electrical detection device keeps outputting a first resistance value signal; Determining that the residue covers the deburred area.

[0014] Optionally, the electrical detection device outputs the current signals generated by the plurality of detection probes during movement as a first current signal or a second current signal, and determining whether there is a residue in the deburred area according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes to move from the plating area to the deburred area. During the movement, after the current signal output by the electrical detection device changes from the first current signal to the second current signal, it keeps outputting the second current signal until the electrical detection device outputs no current signal; the resistance value signal output by the electrical detection device gradually changes from the first resistance value signal to the second resistance value signal; Determining that there is the residue in the deburred area, and the edge of the residue fits with the edge of the plating area.

[0015] Optionally, the gradual change of the first resistance value signal to the second resistance value signal includes: The first resistance value signal changes to the second resistance value signal at the same change rate; Or the first resistance value signal changes to the second resistance value signal at a decreasing change rate.

[0016] Optionally, the electrical detection device outputs the current signals generated by the plurality of detection probes during movement as a first current signal or a second current signal, and determining whether there is a residue in the deburred area according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes to move from the plating area to the deburred area. During the movement, the current signal output by the electrical detection device changes from the first current signal to the second current signal and then changes back to the first current signal; the resistance value signal output by the electrical detection device directly changes from the first resistance value signal to the second resistance value signal; It is determined that there is the residue in the edge-trimmed area, and there is a gap between the residue and the edge of the plating area.

[0017] Optionally, the electrical detection device outputs the current signals generated by the plurality of detection probes during movement as a first current signal or a second current signal. Determining whether there is a residue in the edge-trimmed area according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes to move from the plating area to the edge-trimmed area. During the movement, after the current signal output by the electrical detection device changes from the first current signal to the second current signal, the electrical detection device keeps outputting the second current signal until the electrical detection device outputs no current signal; the resistance value signal output by the electrical detection device directly changes from a first resistance value signal to a second resistance value signal; It is determined that there is no such residue in the edge-trimmed area. Description of the Drawings

[0018] Figure 1 A schematic diagram of the positional relationship of a plurality of detection probes according to an embodiment of the present invention; Figure 2 A cross-sectional view of a detection probe structure according to an embodiment of the present invention; Figure 3 A step diagram of a cleaning method according to an embodiment of the present invention; Figure 4 A schematic diagram of the path of a detection probe moving on the surface of a wafer and reciprocating through the edge-trimmed area according to an embodiment of the present invention; Figure 5 A schematic diagram of the path of a detection probe reciprocating through the edge-trimmed area when detecting whether there is a residue in the edge-trimmed area according to an embodiment of the present invention; Figure 6 A schematic diagram of the path of a detection probe reciprocating through the edge-trimmed area when detecting the shape of the residue according to an embodiment of the present invention; Figure 7 A schematic diagram of the edge-trimmed area covered by the residue; and a schematic diagram of the change in the intensity of the current signal during the movement of the detection probe from the plating area towards the edge of the wafer, where the X-axis indicates the position of the detection probe on the surface of the wafer and the Y-axis indicates the intensity of the current signal; Figure 8 A schematic diagram of the edge-trimmed area covered by the residue; and a schematic diagram of the change in the intensity of the resistance value signal during the movement of the detection probe from the plating area towards the edge of the wafer, where the X-axis indicates the position of the detection probe on the surface of the wafer and the Y-axis indicates the intensity of the resistance value signal, point A on the Y-axis represents the second resistance value signal, and point B represents the first resistance value signal; Figure 9Schematic diagram when the edge of the residue in the edge-trimmed area fits the edge of the plating area in an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the current signal intensity; Figure 10 Schematic diagram when the edge of the residue in the edge-trimmed area fits the edge of the plating area in an embodiment of the present invention; and schematic diagram of the change in the resistance signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the resistance signal intensity, point A on the Y-axis represents the second resistance signal, and point B represents the first resistance signal; Figure 11 Schematic diagram when there is no residue in the edge-trimmed area in an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the current signal intensity; Figure 12 Schematic diagram when there is no residue in the edge-trimmed area in an embodiment of the present invention; and schematic diagram of the change in the resistance signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the resistance signal intensity, point A on the Y-axis represents the second resistance signal, and point B represents the first resistance signal; Figure 13 Schematic diagram when there is a residue in the middle of the edge-trimmed area in an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the current signal intensity; Figure 14 Schematic diagram when there is a residue in the middle of the edge-trimmed area in an embodiment of the present invention; and schematic diagram of the change in the resistance signal intensity during the movement of the detection probe from the plating area towards the wafer edge, where the X-axis indicates the position of the detection probe on the wafer surface and the Y-axis indicates the resistance signal intensity, point A on the Y-axis represents the second resistance signal, and point B represents the first resistance signal.

[0019] Reference numerals: 100, electrical detection device; 110, detection probe; 200, detection end; 300, positioning member; 410, fixing member; 411, mounting hole; 420, moving member; 430, elastic member; 440, detecting member; 510, plating area; 520, edge-trimmed area; 530, movement track; 540, residue. Detailed implementation manners

[0020] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below. Apparently, the described embodiments are only a part rather than all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0021] The following will further describe in detail the specific implementation manners of the present invention with reference to the Figure 1-14 accompanying drawings.

[0022] An embodiment of the present invention provides a detection device, which is used to detect residues 540 on the surface of a wafer. Specifically, the surface of the wafer includes a plating region 510 and a bevel region 520. Among them, the plating region 510 is on the surface of the wafer and coaxial with the wafer, and the material of the plating region 510 is copper; when plating copper, generally a layer of tantalum (Ta) or tantalum nitride (TaN) will be deposited first as a copper barrier layer, that is, the bevel region 520 is made of tantalum (Ta) or tantalum nitride (TaN); therefore, the plating region 510 forms a circle coaxial with the wafer on the wafer, and the bevel region 520 forms an annulus coaxial with the wafer on the wafer.

[0023] Specifically, the conductivity of copper is 58 MS / m; the conductivity of tantalum is 7.6 MS / m; the conductivity of tantalum nitride is 2.5 MS / m. That is to say, when the voltage is constant, the current in a DC circuit is proportional to the conductivity. Since the conductivity of copper is much higher than that of tantalum or tantalum nitride, when the same voltage is applied to the two materials, a larger current signal can be detected in copper at the same distance; when the same current is applied to the two materials, the distance at which copper detects the current signal is farther. Therefore, it is possible to detect whether there are residues 540 formed by copper residues in the bevel region 520 according to the current signal.

[0024] The detection device includes: an electrical detection device 100, which is used to provide voltage; Multiple detection probes 110, each detection probe 110 has an arc-shaped detection end 200, any two detection probes 110 cooperate to form a detection unit, and each detection unit is electrically connected to the electrical detection device 100; the detection end 200 of the detection unit contacts the coating area 510 and / or the edge removal area 520, and the electrical detection device 100 provides a voltage to the detection unit to form an electrical circuit between the electrical detection device 100, the detection unit, and the wafer; the electrical detection device 100 outputs the current signal detected by the detection probe 110; When the detection ends 200 of the detection units are in contact with the coating area 510 , the electrical detection device 100 outputs a first current signal; When the detection ends 200 of the detection units are in contact with the edge removal area 520 , the electrical detection device 100 outputs a second current signal; In the de-edging area 520, when the electrical detection device 100 keeps outputting the first current signal, the de-edging area 520 is covered by the residue 540; when the second current signal increases, part of the de-edging area 520 is covered by the residue 540; when the electrical detection device 100 keeps outputting the second current signal, there is no residue 540 in the de-edging area 520.

[0025] Specifically, refer to Figure 1 and Figure 2 There are multiple detection probes 110, which can be two, three or more. In this embodiment, four detection probes 110 are set as an example. The four detection probes 110 are spaced apart along the same direction, and the same interval is maintained between two adjacent detection probes 110, which is specifically introduced below.

[0026] In some embodiments, the electrical detection device 100 is used to provide voltage and output a detected current signal. Specifically, the electrical detection device 100 includes an ammeter and a power supply.

[0027] In some embodiments, any two detection probes 110 cooperate to form a detection unit, and each detection unit is electrically connected to an electrical detection device 100. The electrical detection device 100 can provide voltage to the detection probe in the corresponding detection unit and output the current signal detected by the detection probe in the corresponding detection unit. Specifically, the ammeter, power supply, and detection probe 110 are connected in series. When the detection ends 200 of the two detection probes 110 contact the coating area 510 or the edge removal area 520, the ammeter, power supply, detection probe 110, and the coating area 510 or the edge removal area 520 contact to form an electrical circuit. At this time, the power supply provides voltage, current is formed in the electrical circuit, and the ammeter can detect the current signal.

[0028] In some specific embodiments, a plurality of detection probes 110 are provided. During the detection process, a plurality of detection units can output current signals of the detection probes 110 at different positions and different distances, and determine whether there is residue in the edge-removing area 520 according to the current signals. Here, the change of the current signal in one detection unit is taken as an example. In some specific embodiments, when the detection ends 200 on two detection probes 110 are both in contact with the plating area 510, the current signal output by the corresponding electrical detection device 100 is defined as the first current signal; when the detection ends 200 on two detection probes 110 are both in contact with the edge-removing area 520, the current signal output by the corresponding electrical detection device 100 is defined as the second current signal; during the detection process, it is possible to judge whether there is a residue 540 in the edge-removing area 520 according to the changes of the first current signal and the second current signal. For example, when the detection ends 200 on two detection probes 110 are both moving within the edge-removing area 520, the electrical detection device 100 should keep outputting the second current signal. At this time, when the electrical detection device 100 keeps outputting the first current signal, it indicates that the edge-removing area 520 is completely covered by the residue 540; when the electrical detection device 100 outputs the second current signal and the second current signal increases, it indicates that part of the edge-removing area 520 is covered by the residue 540; when the electrical detection device 100 keeps outputting the second current signal, it indicates that there is no residue 540 in the edge-removing area 520. The specific judgment method will be described later.

[0029] To facilitate fixing the interval between adjacent detection probes 110, the detection device is further provided with: A positioning member 300 for fixing a plurality of detection probes 110; the plurality of detection probes 110 are distributed at intervals along a straight line on the positioning member 300, and the interval between every two adjacent detection probes 110 is the same.

[0030] Specifically, a plurality of detection probes 110 are all fixedly arranged on the positioning member 300, and the fixing method can be snap connection, bonding or bolt fixing, etc., which is not limited here, as long as the position of the detection probe 110 on the positioning member 300 does not move. At the same time, a plurality of detection probes 110 are arranged along a straight line on the positioning member 300, and the interval between every two adjacent detection probes 110 is the same; during the detection process, the moving path direction of the plurality of detection probes 110 is the same as the distribution direction of the plurality of detection probes 110 on the positioning member 300, that is, each probe moves along the same path to detect the edge-removing area 520.

[0031] During the detection process, after the detection probe 110 contacts the residue 540; to facilitate detecting the height of the residue 540, the detection probe 110 is set to be in a telescopic state, and the height of the residue 540 can be judged by detecting the telescopic degree. Specifically, the detection probe 110 includes: The fixing member 410 has a mounting hole 411 at one end and is fixedly provided at the positioning member 300 at the other end; The moving member 420 has one end movably disposed in the mounting hole 411 and the other end is the detection end 200; The elastic member 430 is disposed in the mounting hole 411 and abuts against the moving member 420 to push the moving member 420 to move, so that the detection end 200 contacts the plating area 510 and / or the deburring area 520; The detecting member 440 is disposed on the elastic member 430 and is electrically connected to the electrical detecting device 100. The detecting member 440 generates a resistance value signal when the elastic member 430 deforms. The electrical detecting device 100 receives and outputs the resistance value signal, and calculates the deformation distance of the elastic member 430 according to the change of the resistance value signal; When the detection end 200 contacts the plating area 510, the electrical detection device 100 outputs a first resistance value signal; When the detection end 200 contacts the deburring area 520, the electrical detection device 100 outputs a second resistance value signal.

[0032] In some embodiments, the detecting member 440 is a resistance strain gauge. When the elastic member 430 deforms, the resistance value of the detecting member 440 changes. When the resistance strain gauge is pasted on the surface of the elastic member 430, the elastic member 430 deforms under force, and the resistance strain gauge will also deform slightly. This deformation will cause changes in the length and cross-sectional area of the resistance strain gauge, thereby causing a change in the resistance value. According to the change in the resistance value, the strain value of the resistance strain gauge can be calculated, and thus the deformation distance of the elastic member 430 can be calculated. Details will be introduced later.

[0033] Specifically, the fixing member 410 and the detection member 440 are both rod-shaped. The fixing member 410 is fixedly arranged on the positioning member 300, so that the detection probe is fixed on the positioning member 300. The end of the fixing member 410 is provided with a mounting hole 411, and the mounting hole 411 is coaxially arranged with the fixing member 410. One end of the movable member 420 is passed through the mounting hole 411 and can move axially along the mounting hole 411 in the mounting hole 411; the elastic member 430 is arranged in the mounting hole 411, and one end of the elastic member 430 abuts against the movable member 420, and the other end is fixed to the bottom wall or side wall of the mounting hole 411, wherein there is no restriction on the fixing method of the elastic member 430 in the mounting hole 411411, and the main principle is that the end of the elastic member 430 does not move in the mounting hole 411. The elastic member 430 applies a force to the movable member 420 along the axial direction of the mounting hole 411 to move the movable member 420 away from the mounting hole 411, so as to facilitate the detection process. In some embodiments, the movable member 420 will not separate from the mounting hole 411 and can move within the mounting hole 411. For example, a protrusion is provided on the side wall of the movable member 420, and a groove is provided on the inner wall of the mounting hole 411. The length direction of the groove is parallel to the axial direction of the mounting hole 411, and the protrusion is passed through the groove to prevent the movable member 420 from separating from the mounting hole 411.

[0034] At the same time, the other end of the movable member 420 is the detection end 200. The detection end 200 is arranged in an arc shape. When the detection end 200 contacts the coating area 510 or the edge removal area 520, it will not be inserted into the coating area 510 or the edge removal area 520, thereby reducing damage to the coating area 510 or the edge removal area 520. During the detection process, the multiple detection probes 110 are controlled to move on the coating area 510 and / or the edge removal area 520 at a fixed step length. At the same time, because the detection end 200 is curved, during the detection process, the first probe and the second probe will not damage the coating area 510 or the edge removal area 520. In some specific embodiments, the step length is the interval between each movement of the detection probe 110 on the motion trajectory 530.

[0035] In some specific embodiments, referring to Figure 2 During the detection process, when the detection end 200 contacts the residue 540, the moving member 420 moves toward the inside of the mounting hole 411, and the elastic member 430 is compressed. At this time, the height of the residue 540 can be detected by simply detecting the distance the elastic member 430 is compressed.

[0036] To facilitate the detection of the deformation distance of the elastic member 430, a detection member 440 is provided on the elastic member 430. Specifically, the detection member 440 is a resistance strain gauge. When the elastic member 430 deforms, the resistance of the detection member 440 changes. According to the change in the resistance value, the change in the strain value of the resistance strain gauge can be calculated, and according to the strain value, the deformation distance of the elastic member 430 can be calculated, thereby calculating the height of the residue 540. The specific calculation method will be described later.

[0037] In some more specific embodiments, when the detection end 200 contacts the plating region 510, the resistance value signal output by the electrical detection device 100 is the first resistance value signal; when the detection end 200 contacts the edge-removing region 520, the resistance value signal output by the electrical detection device 100 is the second resistance value signal; when the detection probe moves within the edge-removing region 520, the resistance value signal output by the electrical detection device 100 should be the second resistance value signal. When the detection probe moves within the edge-removing region 520 and the resistance value signal output by the electrical detection device 100 increases, it indicates that there is a residue 540 within the edge-removing region 520. At the same time, according to the change in the resistance value signal, the height of the residue 540 can be calculated, which will be specifically described later.

[0038] An embodiment of the present invention also provides a cleaning method, which is applicable to the above detection device and is used to detect the specific shape and position of the residue 540 on the wafer surface. Specifically, referring to Figure 3 , the cleaning method includes: Controlling a plurality of detection probes 110 to reciprocate on the wafer surface, so that the plurality of detection probes 110 reciprocate through the edge-removing region 520, and the intervals of the movement trajectories 530 of the plurality of detection probes 110 are the same each time; The electrical detection device 100 outputs the current signals generated by the plurality of detection probes 110 during the movement as the first current signal or the second current signal, and determines whether there is a residue 540 in the edge-removing region 520 according to the intensity change of the first current signal and the second current signal; When there is a residue 540 in the edge-removing region 520, control the step size of the movement of the plurality of detection probes 110 on the movement trajectory 530 to decrease, and control the interval of the movement trajectories 530 of the plurality of detection probes 110 to decrease, so that the plurality of detection probes 110 reciprocate through the residue 540, and the electrical detection device 100 outputs current signals and resistance value signals during the movement; The control system receives the current signal and determines the position of the residue 540 according to the intensity change of the current signal; The control system receives the resistance value signal and calculates the height of the residue 540; Clean the edge-removing region 520 again according to the position and height of the residue 540; Repeat the above steps until there is no residue 540 in the edge-removing region 520.

[0039] In some embodiments, referring to Figure 4 , the multiple detection probes 110 are reciprocated on the surface of the wafer. Specifically, the multiple detection probes 110 reciprocate along the radial direction of the wafer on the surface of the wafer, and the same interval is maintained between two adjacent movement trajectories 530.

[0040] In some specific embodiments, referring to Figure 3 and Figure 4 , when in the initial state, the multiple detection probes 110 are all in contact with the plating area 510; during the detection process, the detection ends 200 of the multiple detection probes 110 move along the radial direction of the wafer from the plating area 510 and pass through the deburring area 520 to form a movement trajectory 530; after passing through the deburring area 520, the multiple detection probes 110 move along the circumferential direction of the wafer and move along the radial direction of the wafer towards the plating area 510 until the detection ends 200 of the multiple detection probes 110 are all in contact with the plating area 510, forming another movement trajectory 530. It should be noted that the interval at which the multiple detection probes 110 move along the circumferential direction of the wafer can be set according to the actual situation and is not limited here, mainly to be able to evenly pass through the deburring area 520.

[0041] In some more specific embodiments, the width of the deburring area 520 is about 2.2 mm, that is, the distance from the edge of the plating area 510 to the edge of the wafer is about 2.2 mm; the detection ends 200 of the multiple detection probes 110 reciprocate along the radial direction of the wafer from a position 3 mm away from the edge of the wafer in the plating area 510 to detect whether there is a residue 540 in the deburring area 520.

[0042] In some embodiments, the height of the residue 540 can be calculated according to the resistance value signal. In some specific embodiments, the detection component 440 is a resistance strain gauge, and the detection component 440 is electrically connected to the electrical detection device 100. In order to be able to receive the electrical signal emitted by the detection component 440, the electrical detection device 100 further includes a measuring instrument, such as a resistance strain gauge; at the same time, the resistance strain gauge is electrically connected to the control system to transmit the signal to the control system and calculate the deformation distance of the elastic component 430 in the control system, so as to calculate the height of the residue 540.

[0043] More specifically, the height H of the residue 540 is calculated according to the following formula:

[0044] where ΔR is the change in the resistance of the detection component 440; R is the original resistance value of the detection component 440; G is the sensitivity coefficient of the detection component 440; and L is the original length of the spring.

[0045] In some specific embodiments, since the first resistance value signal and the second resistance value signal are set, when the output resistance value signal is the first resistance value signal and the second resistance value signal, it indicates that the detection probe 110 is in contact with the plating area 510 or the deburring area 520; taking one detection unit as an example, when the two detection probes 110 in one detection unit are respectively in contact with the plating area 510 and the deburring area 520, the electrical detection device 100 outputs the resistance value signals of the two detection probes 110 respectively, that is, the first resistance value signal and the second resistance value signal, and the absolute value of the difference between the first resistance value signal and the second resistance value signal is the resistance change amount. In some more specific embodiments, within the deburring area 520, taking one detection unit as an example, at this time, the two resistance value signals output by the electrical detection device 100 should be the second resistance value signal. When one of the detection probes 110 is in contact with the residue 540, the elastic member 430 is compressed, and at this time, the corresponding resistance value signal changes, and the difference between the changed resistance value signal and the absolute value of the first resistance value signal is the resistance change amount.

[0046] More specifically, since there are multiple detection probes 110, forming multiple detection units, therefore, during the movement of the multiple detection probes 110, the resistance value signals output by each electrical detection device 100 can be compared and analyzed to determine the height of the residue 540. For example, when there are four detection probes 110, from the plating area 510 towards the edge of the wafer, they are sequentially defined as the first probe, the second probe, the third probe, and the fourth probe. During the movement, when the fourth probe is in contact with the residue 540 and the first probe, the second probe, and the third probe are all in contact with the deburring area 520, the current signal output by the electrical detection device 100 in the detection unit including the fourth probe is significantly smaller than the current signals output by the electrical detection devices 100 in other detection units; the resistance value signal at the fourth probe changes, and the resistance value signals at the first probe, the second probe, and the third probe remain the second resistance value signal.

[0047] In some more specific embodiments, after the electrical detection device 100 transmits the resistance value signal to the control system, the resistance value signal can be plotted as a curve graph on the control system to facilitate observing the change of the resistance value signal. This is the prior art and will not be elaborated here.

[0048] During the detection process, based on the changes in the current signal and the resistance value signal, the area and height of the residue 540 can be judged.

[0049] Control the multiple detection probes 110 to move from the plating area 510 to the deburring area 520. During the movement, the electrical detection device 100 keeps outputting the first current signal until the electrical detection device 100 outputs no current signal; the electrical detection device 100 keeps outputting the first resistance value signal; Determine that the residue 540 covers the deburring area 520.

[0050] In some embodiments, referring to Figure 1 , Figure 7 and Figure 8 , when both detection probes 110 of the same detection unit are in contact with the plating area 510, the electrical detection device 100 in the detection unit maintains the output of the first current signal. That is to say, when the two detection probes 110 of the same detection unit are in contact with the copper material, the corresponding electrical detection device 100 maintains the output of the first current signal; Therefore, during the movement of the plurality of detection probes 110 from the plating area 510 to the deburring area 520, if the electrical detection device 100 in each detection unit maintains the output of the first current signal until the electrical detection device 100 has no current signal output; when each electrical detection device 100 has no current signal output, it means that the plurality of detection probes 110 are all outside the range of the wafer. Therefore, through the above, it is described that the detection ends 200 of the plurality of detection probes 110 remain in contact with the copper material in the deburring area 520, that is, on this detection path, the residue 540 of the copper material covers the entire deburring area 520.

[0051] Since the plurality of probes move reciprocally, when the plurality of probes move from the edge of the wafer towards the plating area 510, if the electrical detection device 100 of each detection unit maintains the output of the first current signal, then on this detection path, the residue 540 of the copper material covers the entire deburring area 520.

[0052] In some embodiments, since the residue 540 covers the entire deburring area 520 and the height of the residue 540 is the same as the height of the plating area 510, the resistance value signal output by the electrical detection device 100 is the first resistance value signal.

[0053] In some embodiments, since the residue 540 covers the entire deburring area 520 and the height of the residue 540 is lower than the height of the plating area 510, the resistance value signal output by the electrical detection device 100 changes. More specifically, the resistance value signal output at this time is between the first resistance value signal and the second resistance value signal.

[0054] Control the plurality of detection probes 110 to move from the plating area 510 to the deburring area 520. During the movement, after the current signal output by the electrical detection device 100 changes from the first current signal to the second current signal, it maintains the output of the second current signal until the electrical detection device 100 has no current signal output; the resistance value signal output by the electrical detection device 100 gradually changes from the first resistance value signal to the second resistance value signal; Determine that there is a residue 540 in the deburring area 520, and the edge of the residue 540 fits the edge of the plating area 510.

[0055] In some embodiments, referring to Figure 1 、 Figure 9 、 Figure 10 Figure 11 and Figure 12 , after the current signal output by the electrical detection device 100 in one of the detection units changes from the first current signal to the second current signal, it indicates that both detection probes 110 in this detection unit are in contact with the tantalum or tantalum nitride material in the edge removal region 520 at this time. Specifically, when the plurality of detection probes 110 move from the plating region 510 towards the edge of the wafer, the electrical detection device 100 whose output current signal first changes from the first current signal to the second current signal should be the detection unit composed of the fourth probe and the third probe. More specifically, when the third probe and the fourth probe are in contact with the edge removal region 520, and the first probe and the second probe are in contact with the plating region 510, the current signal output by the electrical detection device 100 of the detection unit formed by the third probe and the fourth probe is the second current signal; the current signal output by the electrical detection device 100 of the detection unit formed by the first probe and the second probe is the first current signal; at this time, the current signals output by the electrical detection devices 100 of the detection units formed by other probe combinations should be between the first current signal and the second current signal; when the probe is in contact with the residue 540, it is the same as above and will not be elaborated here.

[0056] In some specific embodiments, referring to Figure 9 and Figure 11, when both of the two detection probes 110 of the same detection unit are in contact with the plating area 510, that is, when in contact with the copper material, the corresponding electrical detection device 100 of this detection unit keeps outputting a first current signal; when one of the two detection probes 110 of the same detection unit is in contact with the plating area 510 and the other is in contact with the edge removal area 520, that is, when one is in contact with the copper material and the other is in contact with the tantalum or tantalum nitride material, the signal intensity output by the electrical detection device 100 is less than the intensity of the first current signal; when both of the two detection probes 110 of the same detection unit are in contact with the edge removal area 520, that is, when in contact with the tantalum or tantalum nitride material, the electrical detection device 100 keeps outputting a second current signal. That is to say, during the movement of the multiple detection probes 110, when the output signal of the electrical detection device 100 changes from the first current signal to the second current signal, it indicates that both of the two detection probes 110 of the same detection unit are in contact with the edge removal area 520, that is, in contact with the tantalum or tantalum nitride material; when the output signal of each electrical detection device 100 changes to the second current signal and keeps the second current signal until there is no output signal, at this time, the multiple detection probes 110 move out of the range of the wafer. Therefore, it can be judged that on this detection path, there is no residue 540 of copper material in the edge removal area 520, or the edge of the residue 540 of copper material fits with the edge of the plating area 510. At this time, it is also necessary to determine according to the change of the resistance value signal whether there is no residue 540 in the edge removal area 520 or the edge of the residue 540 in the edge removal area 520 fits with the edge of the plating area 510; or it can also be determined according to the change position of the current signal, which will be specifically introduced below.

[0057] Since the multiple detection probes 110 move back and forth, when the multiple detection probes 110 move from the edge of the wafer towards the plating area 510, if the output signal of the electrical detection device 100 is the second current signal and changes to and keeps the first current signal during the movement, then on this detection path, there is no residue 540 of copper material in the edge removal area 520, or the edge of the residue 540 of copper material fits with the edge of the plating area 510.

[0058] When determining the position of the residue 540 according to the change position of the current signal, it can be judged according to the timing of the change of the first current signal. For example, when the multiple detection probes 110 move from the plating area 510 along the radial direction of the wafer towards the edge of the wafer, taking one detection unit as an example, when the first current signal output by the electrical detection device 100 in this detection unit starts to decrease from a position 2 mm away from the edge of the wafer, it indicates that on this path, there is a residue 540 in the range from 2.2 mm to 2 mm away from the edge of the wafer; when the multiple detection probes 110 move from the edge of the wafer towards the plating area 510, when the first current signal starts to increase from a position 2 mm away from the edge of the wafer, it indicates that on this path, there is a residue 540 in the range from 2.2 mm to 2 mm away from the edge of the wafer.

[0059] When the first current signal output by the electrical detection device 100 in the detection unit starts to decrease from a position 2.2 mm away from the edge of the wafer, it indicates that there is no residue 540 in the edge removal area 520 on this path; when multiple detection probes 110 move from the edge of the wafer towards the plating area 510, when the first current signal starts to increase from a position 2.2 mm away from the edge of the wafer, it indicates that there is no residue 540 in the edge removal area 520 on this path.

[0060] When determining the position of the residue 540 based on the change position of the resistance value signal, referring to Figure 10 and Figure 12 it is possible to judge whether the edge of the residue 540 in the edge removal area 520 is in contact with the edge of the plating area 510 according to the change state of the first resistance value signal becoming the second resistance value signal. Specifically, when the edge of the residue 540 in the edge removal area 520 is not in contact with the edge of the plating area 510, the first resistance value signal should directly become the second resistance value signal; during the movement, when the first resistance value signal corresponding to the detection probe 110 gradually changes to the second resistance value signal, it indicates that there is a residue 540 in the edge removal area 520 and the edge of the residue 540 is in contact with the edge of the plating area 510.

[0061] Set the first resistance signal as B and the second resistance signal as A. During the change process, the first resistance value signal changes to the second resistance value signal. The first resistance value signal changes to the second resistance value signal at the same change rate; or the first resistance value signal changes to the second resistance value signal at a decreasing change rate. Specifically, according to the change of the output resistance value signal, the change in the resistance of the detection piece 440 can be obtained. At the same time, when the first resistance value signal is output, the elastic member 430 is in a compressed state, and when the second resistance value signal is output, the elastic member 430 is in an extended state. Therefore, the first resistance value signal should be greater than the second resistance value signal; during the movement of the detection probe 110, the detection probe 110 slowly moves from the edge of the plating area 510 along the residue 540 to contact the edge removal area 520. During the movement, when the first resistance value signal changes to the second resistance value signal at the same change rate, the image of the change process of the first resistance value signal changing to the second resistance value signal at this time is an inclined straight line; when the first resistance value signal changes to the second resistance value signal at a decreasing change rate, the image of the change process of the first resistance value signal changing to the second resistance value signal at this time is an inclined curve.

[0062] In some more specific embodiments, the process of the first resistance value signal becoming the second resistance value signal may also be that the first resistance value signal decreases uniformly, so that the image formed by multiple resistance value signals is an oblique line. The process of the first resistance value signal becoming the second resistance value signal may also be intermittent multiple changes until the first resistance value signal becomes the second resistance value signal. However, no matter which change situation, it indicates that there is a residue 540 on the edge removal area 520 and the edge of the residue 540 fits the edge of the plating area 510.

[0063] In some more specific embodiments, it is possible to determine that the edge of the residue 540 in the edge removal area 520 fits the edge of the plating area 510 according to the current signal, the resistance value signal, and the position where they change.

[0064] Control multiple detection probes 110 to move from the plating area 510 to the edge removal area 520. During the movement, the current signal output by the electrical detection device 100 changes from the first current signal to the second current signal and then becomes the first current signal again; the resistance value signal output by the electrical detection device 100 directly changes from the first resistance value signal to the second resistance value signal; It is determined that there is a residue 540 in the edge removal area 520, and there is a gap between the residue 540 and the edge of the plating area 510.

[0065] In some embodiments, referring to Figure 1 、 Figure 13 and Figure 14 When the first current signal output by the electrical detection device 100 becomes the second current signal, it indicates that both detection probes in the detection unit corresponding to the electrical detection device 100 are in contact with the tantalum or tantalum nitride material in the edge removal area 520.

[0066] During the movement of multiple detection probes 110 towards the edge of the wafer on the edge removal area 520, the electrical detection device 100 of each detection unit outputs a second current signal. During the movement, when the second current signal increases to the first current signal and remains, until no current signal is output, it indicates that there is a residue 540 in the edge removal area 520. The residue 540 has a gap from the edge of the plating area 510, and the residue 540 is placed at the edge of the edge removal area 520. Specifically, during the movement, the fourth probe first contacts the residue 540. Taking the detection unit formed by the fourth probe and the third probe as an example; since the material of the residue 540 is copper, when the fourth probe contacts the residue 540, the intensity of the output signal of the electrical detection device 100 will increase. When it increases and remains until the electrical detection device 100 outputs no current signal, it indicates that the residue 540 is placed at the edge of the edge removal area 520 on this detection path. At this time, the residue 540 is placed between the third probe and the fourth probe; if the current signal output by the electrical detection device 100 increases and remains, and continues to move, the current signal continues to increase to the first current signal. At this time, both the third probe and the fourth probe contact the residue 540; at this time, the current signal output by the electrical detection device 100 of other detection units can be analyzed to determine the position of the residue 540.

[0067] During the process of multiple detection probes 110 moving towards the edge of the wafer on the edge removal area 520, when the second current signal output by the electrical detection device 100 increases and then decreases and remains until no current signal is output, it indicates that there is a residue 540 in the edge removal area 520. The residue 540 has a gap from the edge of the plating area 510, and the residue 540 is placed in the middle of the edge removal area 520. Specifically, during the movement process, the fourth probe first contacts the residue 540. Taking the detection unit formed by the fourth probe and the third probe as an example; the increase in the second current signal indicates that the fourth probe contacts the copper-based residue 540, and the third probe has not yet contacted the residue 540. Continuing to move on this basis, when the current signal becomes the first current signal, both the third probe and the fourth probe contact the residue 540; continuing to move on this basis, the third probe contacts the residue 540 and the fourth probe separates from the residue 540; the current signal decreases from the first current signal; continuing to move on this basis, both the third probe and the fourth probe separate from the residue 540, and at this time the current signal decreases to the second current signal; continuing to move on this basis until the electrical detection device 100 outputs no current signal; it indicates that on this detection path, there is a partial residue 540 in the edge removal area 520, and the residue 540 is placed in the middle of the edge removal area 520 on this detection path. During the actual detection process, the changes in the current signals output by the electrical detection device 100 in each detection unit can be compared respectively to further determine the area of the residue 540; for example, during the movement of multiple detection probes 110, the current signal output by the electrical detection device 100 of the detection unit including the fourth probe changes first, and the current signal output by the electrical detection device 100 of the detection unit including the third probe changes later.

[0068] Since multiple detection probes 110 move back and forth, when multiple detection probes 110 move from the edge of the wafer towards the plating area 510, if the output signal of the electrical detection device 100 in the detection unit increases first and then decreases during the movement, it indicates that on this detection path, there is a local partial residue 540 in the edge removal area 520, and the residue 540 is placed in the middle of the edge removal area 520 on this detection path.

[0069] When there is a residue 540 in the edge removal area 520, the interval of the movement trajectory 530 of multiple detection probes 110 is reduced, and multiple detection probes 110 are controlled to reciprocate through the residue 540, and the electrical detection device 100 outputs a current signal and a resistance value signal during the movement process.

[0070] In some embodiments, referring to Figure 4 、 Figure 5 and Figure 6, multiple detection probes 110 reciprocate through the edge-removing area 520, and the step size of each movement trajectory 530 is the same. When residues 540 are detected in the edge-removing area 520, the multiple detection probes 110 stop the ongoing detection process; move towards the plating area 510 to the starting point of the current movement trajectory 530, or move towards the wafer edge to the end of the current movement trajectory 530 and then return to the starting point of the current movement trajectory 530; and start further detecting the residues 540.

[0071] During the further detection of the residues 540, first, control the multiple detection probes 110 to reduce the interval between two adjacent movement trajectories 530 during the detection process; at the same time, on each movement trajectory 530, the step size of the multiple detection probes 110 is reduced to improve the detection accuracy. During the detection process, judge the range and height of the residues 540 according to the change of the current signal and the change of the resistance value signal; the specific judgment method is the same as the foregoing and will not be elaborated here. During the detection process, in the edge-removing area 520, when the output signals of the electrical detection devices 100 of the multiple detection units are all second current signals and continue until no current signal is output, it indicates that the detection of the current residues 540 is completed, and the specific area and height of the residues 540 can be obtained; at this time, the multiple detection probes 110 can be controlled to continue moving on the wafer surface to detect the position of the residues 540; or the multiple detection probes 110 can be controlled to move to the starting point of the further detection of the residues 540, and further reduce the interval of the movement trajectories 530 and the step size of the multiple detection probes 110 on the same movement trajectory 530 to re-detect, so as to further improve the accuracy of the boundary range of the area of the obtained residues 540.

[0072] The implementation principle of the detection device and cleaning method for residues on the wafer surface in the embodiment of the present application is to control the multiple detection probes 110 to move on the wafer surface and reciprocate through the edge-removing area 520 to detect whether there are residues 540 on the edge-removing area 520. When there are residues 540, control the multiple detection probes 110 to reduce the interval between two adjacent movement trajectories 530 during the detection process; at the same time, on each movement trajectory 530, the step size of the multiple detection probes 110 is reduced to improve the detection accuracy. The control system draws the boundary image of the residues 540 and determines the height of the residues 540 according to the current signal and resistance value signal output by the electrical detection device 100 during the detection process, which is convenient for the subsequent cleaning process.

[0073] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention as described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A detection device for residues on the surface of a wafer, wherein the wafer surface includes a plating region (510) and a bevel region (520), and the bevel region (520) surrounds the plating region (510); characterized in that, The detection device includes: An electrical detection device (100) for providing a voltage; A plurality of detection probes (110), each of the detection probes (110) having a detection end (200) arranged in an arc shape. Any two of the detection probes (110) cooperate to form a detection unit, and each detection unit is electrically connected to the electrical detection device (100); the detection end (200) of the detection unit contacts the plating area (510) and / or the edge-removing area (520). The electrical detection device (100) provides a voltage to the detection unit to form an electrical circuit between the electrical detection device (100), the detection unit, and the wafer; the electrical detection device (100) outputs the current signal detected by the detection probe (110); When the detection ends (200) of the detection units all contact the plating area (510), the electrical detection device (100) outputs a first current signal; When the detection ends (200) of the detection units all contact the edge-removing area (520), the electrical detection device (100) outputs a second current signal; In the edge-removing area (520), when the electrical detection device (100) keeps outputting the first current signal, the edge-removing area (520) is covered by the residue (540); when the second current signal increases, part of the edge-removing area (520) is covered by the residue (540); when the electrical detection device (100) keeps outputting the second current signal, there is no residue (540) in the edge-removing area (520).

2. The detection device according to claim 1, characterized in that, It further includes: A positioning member (300) for fixing the plurality of detection probes (110); the plurality of detection probes (110) are arranged at intervals along a straight line on the positioning member (300), and the intervals between every two adjacent detection probes (110) are the same.

3. The detection device according to claim 2, characterized in that, The detection probe (110) includes: A fixing member (410) having a mounting hole (411) at one end and being fixedly arranged at the positioning member (300) at the other end; A moving member (420) having one end movably arranged in the mounting hole (411) and the other end being the detection end (200); An elastic member (430) arranged in the mounting hole (411) and abutted against the moving member (420) to push the moving member (420) to move, so that the detection end (200) contacts the plating area (510) and / or the edge-removing area (520); A detection member (440) arranged on the elastic member (430) and electrically connected to the electrical detection device (100). The detection member (440) generates a resistance value signal when the elastic member (430) deforms. The electrical detection device (100) receives and outputs the resistance value signal, and calculates the deformation distance of the elastic member (430) according to the change of the resistance value signal; When the detection end (200) contacts the plating area (510), the electrical detection device (100) outputs a first resistance value signal; When the detection end (200) contacts the edge-removing area (520), the electrical detection device (100) outputs a second resistance value signal.

4. A cleaning method for residues on the surface of a wafer, characterized in that, Performing cleaning according to the detection result of the detection device according to any one of claims 1-3, the cleaning method comprising: Controlling a plurality of detection probes (110) to reciprocate on the surface of the wafer, so that the plurality of detection probes (110) reciprocate through the edge-removing area (520), and the intervals of the movement trajectories (530) of the plurality of detection probes (110) each time are the same; The electrical detection device (100) outputs the current signals generated by the plurality of detection probes (110) during the movement as a first current signal or a second current signal, and determines whether there is a residue (540) in the edge-removing area (520) according to the intensity changes of the first current signal and the second current signal; When there is a residue (540) in the edge-removing area (520), controlling the step length of the plurality of detection probes (110) moving on the movement trajectory (530) to decrease, and controlling the intervals of the movement trajectories (530) of the plurality of detection probes (110) to decrease, so that the plurality of detection probes (110) reciprocate through the residue (540), and the electrical detection device (100) outputs a current signal and a resistance value signal during the movement; The control system receives the current signal and determines the position of the residue (540) according to the intensity change of the current signal; The control system receives the resistance value signal and calculates the height of the residue (540); Performing secondary cleaning on the edge-removing area (520) according to the position and height of the residue (540); Repeating the above steps until there is no residue (540) in the edge-removing area (520).

5. The cleaning method according to claim 4, wherein The control system receives the resistance value signal and calculating the height of the residue (540) includes: Calculating the height H of the residue (540) according to the following formula: Wherein, ΔR is the resistance change amount of the detection member (440); R is the original resistance value of the detection member (440); G is the sensitivity coefficient of the detection member (440); L is the original length of the elastic member (430).

6. The cleaning method according to claim 4, wherein The electrical detection device (100) outputs the current signals generated by the plurality of detection probes (110) during the movement as a first current signal or a second current signal, and determines whether there is a residue (540) in the edge-removing area (520) according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes (110) to move from the plating area (510) to the edge-removing area (520), and during the movement, the electrical detection device (100) keeps outputting the first current signal until the electrical detection device (100) outputs no current signal; the electrical detection device (100) keeps outputting the first resistance value signal; Determining that the residue (540) covers the edge-removing area (520).

7. The cleaning method according to claim 4, characterized in that, The electric detection device (100) outputs the current signals generated by the plurality of detection probes (110) during movement as a first current signal or a second current signal. Judging whether there is a residue (540) in the edge-trimmed area (520) according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes (110) to move from the plating area (510) to the edge-trimmed area (520). During the movement, after the current signal output by the electric detection device (100) changes from the first current signal to the second current signal, the second current signal is kept output until the electric detection device (100) outputs no current signal; the resistance value signal output by the electric detection device (100) gradually changes from a first resistance value signal to a second resistance value signal; Determining that there is the residue (540) in the edge-trimmed area (520), and the edge of the residue (540) is in contact with the edge of the plating area (510).

8. The cleaning method according to claim 7, wherein The gradual change of the first resistance value signal to the second resistance value signal includes: The first resistance value signal changes to the second resistance value signal at the same change rate; Or the first resistance value signal changes to the second resistance value signal at a decreasing change rate.

9. The cleaning method according to claim 4, wherein The electric detection device (100) outputs the current signals generated by the plurality of detection probes (110) during movement as a first current signal or a second current signal. Judging whether there is a residue (540) in the edge-trimmed area (520) according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes (110) to move from the plating area (510) to the edge-trimmed area (520). During the movement, after the current signal output by the electric detection device (100) changes from the first current signal to the second current signal, it changes back to the first current signal again; the resistance value signal output by the electric detection device (100) directly changes from a first resistance value signal to a second resistance value signal; Determining that there is the residue (540) in the edge-trimmed area (520), and there is a gap between the residue (540) and the edge of the plating area (510).

10. The cleaning method according to claim 4, wherein The electric detection device (100) outputs the current signals generated by the plurality of detection probes (110) during movement as a first current signal or a second current signal. Judging whether there is a residue (540) in the edge-trimmed area (520) according to the intensity changes of the first current signal and the second current signal includes: Controlling the plurality of detection probes (110) to move from the plating area (510) to the edge-trimmed area (520). During the movement, after the current signal output by the electric detection device (100) changes from the first current signal to the second current signal, the electric detection device (100) keeps outputting the second current signal until the electric detection device (100) outputs no current signal; the resistance value signal output by the electric detection device (100) directly changes from a first resistance value signal to a second resistance value signal; Determine that there is no such residue (540) in the edge-removing area (520).

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