Wafer surface residue detection device and cleaning method

Abstract

The invention discloses a wafer surface residue detection device and a cleaning method, the detection device comprises an electric detection device, a first probe and a second probe, when the detection ends of the first probe and the second probe are in contact with a plating layer area, the electric detection device outputs a first current signal; and when the electric detection device is in contact with the edge removing area, the electric detection device outputs a second current signal. The cleaning method comprises the steps that when residues exist in an edge removing area, one of a first probe and a second probe is kept still, the other one moves in the first direction and then moves in the second direction, and the intensity change of current signals at the residues is detected; the control system receives the current signal and draws an image of the residue; and cleaning the edge-removed area again according to the image of the residue until no residue exists in the edge-removed area. According to the invention, the image of the residue in the edge-removed area can be accurately drawn, and cleaning is continued according to the image, so that the problems that other areas are polluted and the performance and reliability of the device are influenced due to residue falling are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processes, and particularly to a detection device and a cleaning method for residues on the surface of a wafer. Background Art

[0002] In the process of semiconductor manufacturing, especially in the copper electroplating process, thorough edge bead removal (EBR) and its detection are crucial. Edge bead removal can remove unnecessary metal deposits on the edge of the wafer, prevent short circuits and contamination, ensure surface flatness, improve electrical performance and product reliability, and at the same time meet industry standards.

[0003] In the prior art, the edge bead removal effect of the wafer is only obtained by optical detection to get the edge bead removal width. Although this method can provide certain visual information, it cannot accurately judge whether the copper has been completely removed. Optical detection can only observe the physical changes on the surface and it is often difficult to detect the remaining copper; this may lead to potential short circuit risks, contamination problems or a decline in electrical performance in subsequent processes, thereby affecting the overall quality and reliability of semiconductor devices.

[0004] Therefore, it is necessary to provide a new detection device and cleaning method for residues on the surface of a wafer to solve the above problems existing in the prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a detection device and a cleaning method for residues on the surface of a wafer, which can be used to detect whether there are residues in the edge removal area of the wafer, accurately draw an image of the residues in the edge removal area, and continue cleaning according to the image to improve the problem that the residues fall off and cause pollution to other areas, affecting the performance and reliability of the device.

[0006] To achieve the above purpose, the technical solution of the present invention is as follows: A detection device for residues on the surface of a wafer, the surface of the wafer includes a plating area and an edge removal area, and the edge removal area is arranged around the plating area; the detection device includes: An electrical detection device for providing voltage; A first probe and a second probe, both electrically connected to the electrical detection device, both the first probe and the second probe have detection ends, and the detection ends are in contact with the plating area and / or the edge removal area. The electrical detection device provides voltage to the first probe and the second probe, so that an electrical circuit is formed among the electrical detection device, the first probe, the second probe and the wafer and current passes through; the electrical detection device outputs the current signals detected by the first probe and the second probe; When the detection ends on both the first probe and the second probe are in contact with the plating region, the electrical detection device outputs a first current signal; When the detection ends on both the first probe and the second probe are in contact with the deburring region, the electrical detection device outputs a second current signal; Within the deburring region, when the electrical detection device keeps outputting the first current signal, the deburring region is covered with residues; when the electrical detection device outputs the second current signal and the second current signal increases, part of the deburring region is covered with residues; when the electrical detection device keeps outputting the second current signal, there are no residues in the deburring region.

[0007] A cleaning method for residues on the surface of a wafer, which performs cleaning according to the detection result of the detection device. The cleaning method includes: Controlling the first probe and the second probe to reciprocate on the surface of the wafer at a fixed interval, so that the first probe and the second probe reciprocate through the deburring region; The electrical detection device outputs the current signals generated by the first probe and the second probe during movement as the first current signal or the second current signal, and judges whether there are residues in the deburring area according to the intensity changes of the first current signal and the second current signal; When there are residues in the deburring region, one of the first probe and the second probe remains stationary, and the other first moves in a first direction and then in a second direction, and the electrical detection device outputs the current signal during the movement; The control system receives the current signal and draws an image of the residue according to the intensity change of the current signal; Clean the deburring region again according to the image of the residue; Repeat the above steps until there are no residues in the deburring region.

[0008] By adopting the above technical solution, the first probe and the second probe cooperate to move on the surface of the wafer and reciprocate through the edge-trimmed area. During this process, the electrical detection device can detect the change of the detection current signal during the movement of the first probe and the second probe, so as to judge whether there are copper material residues in the edge-trimmed area. When residues are detected in the edge-trimmed area, one of the first probe and the second probe remains stationary, and the other first moves in the first direction and then in the second direction. During this process, according to the change of the current signal, the control system draws the boundary image of the residue, so as to accurately obtain the position and image of the residue, and further clean according to the position and image of the residue, so that there are no residues in the edge-trimmed area, and residues will not fall off in subsequent processing steps, resulting in contamination of other areas and affecting the device performance and reliability.

[0009] Optionally, a receiving space is provided in the detection end, a rolling member and an elastic member are provided in the receiving space, one end of the elastic member abuts against the rolling member, so that part of the rolling member is placed outside the receiving space to contact the plating area and / or the edge-trimmed area; The detecting member is arranged on the elastic member and is electrically connected to the electrical detecting device. The detecting member generates a resistance value signal when the elastic member deforms, and the electrical detecting device receives the resistance value signal and calculates the deformation distance of the elastic member.

[0010] Optionally, both the first probe and the second probe include: A fixing member having a mounting hole at one end; A moving member, one end of which is movably arranged in the mounting hole, and the other end is the detection end, and a rolling member is rotatably arranged on the detection end; An elastic member is arranged in the mounting hole and abuts against the moving member to push the moving member to move, so that the rolling member contacts the plating area and / or the edge-trimmed area; The detecting member is arranged on the elastic member and is electrically connected to the electrical detecting device. The detecting member generates a resistance value signal when the elastic member deforms, and the electrical detecting device outputs the resistance value signal and calculates the deformation distance of the elastic member according to the resistance value signal.

[0011] Optionally, the electrical detection device outputs the current signals generated by the first probe and the second probe during movement as a first current signal or a second current signal. Judging whether there are residues in the edge-trimmed area according to the intensity change of the first current signal and the second current signal includes: Control the first probe and the second probe to move from the plating area to the deburring area. During the movement, the electrical detection device keeps outputting a first current signal until the electrical detection device stops outputting a current signal, and it is determined that the residue covers the deburring area.

[0012] Optionally, the electrical detection device outputs the current signals generated by the first probe and the second probe during the movement as a first current signal or a second current signal. Judging whether there is residue in the deburring area according to the intensity change of the first current signal and the second current signal includes: Control the first probe and the second probe to move from the plating area to the deburring area. During the movement, after the first current signal becomes the second current signal, the electrical detection device keeps outputting the second current signal until the electrical detection device stops outputting a current signal, and it is determined that there is no residue in the deburring area.

[0013] Optionally, the electrical detection device outputs the current signals generated by the first probe and the second probe during the movement as a first current signal or a second current signal. Judging whether there is residue in the deburring area according to the intensity change of the first current signal and the second current signal includes: Control the first probe and the second probe to move from the plating area to the deburring area. During the movement, after the first current signal becomes the second current signal, if the second current signal increases or the second current signal increases first and then decreases, it is determined that part of the deburring area has the residue.

[0014] Optionally, the control system receives the intensity change of the current signal and draws an image of the residue according to the intensity change of the current signal, including: Control the first probe to remain stationary, and the second probe reciprocates along a first direction, and each movement trajectory has an interval in a second direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residue in the first direction.

[0015] Optionally, the control system receives the intensity change of the current signal and draws an image of the residue according to the intensity change of the current signal, and further includes: Control the first probe to remain stationary, and the second probe reciprocates along a second direction, and each movement trajectory has an interval in the first direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residue area in the second direction.

[0016] Optionally, when the elastic member deforms, the resistance value of the detecting member changes and an electrical signal is generated; the control system receives the electrical signal emitted by the detecting member, calculates and outputs the deformation distance of the elastic member. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic structural diagram of a detection device according to an embodiment of the present invention; Figure 2 Cross-sectional view of the structure of a first probe or a second probe according to an embodiment of the present invention; Figure 3 Another cross-sectional view of the structure of a first probe or a second probe according to an embodiment of the present invention; Figure 4 Step diagram of a cleaning method according to an embodiment of the present invention; Figure 5 Schematic diagram of the movement trajectories of a first probe and a second probe on the surface of a wafer according to an embodiment of the present invention; Figure 6 Expanded view of the movement trajectories of a first probe and a second probe reciprocating in the edge-trimming area according to an embodiment of the present invention; Figure 7 Schematic diagram of the edge-trimming area covered with residues according to an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the first probe and the second probe, where the A axis indicates the positions of the first probe and the second probe on the surface of the wafer, and the B axis indicates the current signal intensity; Figure 8 Schematic diagram of the edge-trimming area without residues according to an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the first probe and the second probe, where the A axis indicates the positions of the first probe and the second probe on the surface of the wafer, and the B axis indicates the current signal intensity; Figure 9 Schematic diagram of the edge-trimming area with partial residues according to an embodiment of the present invention; and schematic diagram of the change in the current signal intensity during the movement of the first probe and the second probe, where the A axis indicates the positions of the first probe and the second probe on the surface of the wafer, and the B axis indicates the current signal intensity; Figure 10 Schematic diagram of establishing a plane rectangular coordinate system at the contact point when the second probe contacts the residue according to an embodiment of the present invention, where the X-axis direction is the first direction and the Y-axis direction is the second direction.

[0018] Reference Signs: 100, Electrical detection device; 110, First probe; 120, Second probe; 200, Detection end; 210, Accommodating space; 211, Rolling member; 212, Elastic member; 300, Detection member; 410, Fixing member; 411, Mounting hole; 420, Moving member; 510, Plating region; 520, Deburring region; 530, Movement track; 540, Residue. Detailed implementation manners

[0019] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0020] The following combines the attached Figure 1-10 , and makes a further detailed description of the specific implementation manners of the present invention.

[0021] An embodiment of the present invention provides a detection device, which is used to detect the residue 540 on the surface of a wafer. Specifically, the surface of the wafer includes a plating region 510 and a deburring region 520. Among them, the plating region 510 is on the surface of the wafer and is coaxial with the wafer. The material of the plating region 510 is copper; when plating copper, generally a layer of tantalum (Ta) or tantalum nitride (TaN) will be deposited first as a copper barrier layer, that is, the deburring region 520 is made of tantalum (Ta) or tantalum nitride (TaN); therefore, the plating region 510 forms a circle coaxial with the wafer on the wafer, and the deburring region 520 forms an annular shape coaxial with the wafer on the wafer.

[0022] Specifically, the conductivity of copper is 58 MS / m; the conductivity of tantalum is 7.6 MS / m; the conductivity of tantalum nitride is 2.5 MS / m. That is to say, when the voltage is constant, the current in a DC circuit is proportional to the conductivity. Since the conductivity of copper is much higher than that of tantalum or tantalum nitride, when the same voltage is applied to the two materials, a larger current signal can be detected in copper at the same distance; when the same current is applied to the two materials, the distance at which copper detects the current signal is farther. Therefore, it is possible to detect whether there is a residue 540 formed by the residue of copper in the deburring region 520 according to the current signal.

[0023] The detection device includes: An electrical detection device 100 for providing a voltage; A first probe 110 and a second probe 120, both electrically connected to the electrical detection device 100. The first probe 110 and the second probe 120 both have a detection end 200, and the detection end 200 is in contact with the plating area 510 and / or the edge-removing area 520. The electrical detection device 100 supplies a voltage to the first probe 110 and the second probe 120, so as to form an electrical circuit between the electrical detection device 100, the first probe 110, the second probe 120 and the wafer and pass a current. The electrical detection device 100 outputs the current signals detected by the first probe 110 and the second probe 120; When the detection ends 200 on the first probe 110 and the second probe 120 are both in contact with the plating area 510, the electrical detection device 100 outputs a first current signal; When the detection ends 200 on the first probe 110 and the second probe 120 are both in contact with the edge-removing area 520, the electrical detection device 100 outputs a second current signal; In the edge-removing area 520, when the electrical detection device 100 keeps outputting the first current signal, the edge-removing area 520 is covered by residues 540; when the electrical detection device 100 outputs the second current signal and the second current signal increases, part of the edge-removing area 520 is covered by the residues 540; when the electrical detection device 100 keeps outputting the second current signal, there are no residues 540 in the edge-removing area 520.

[0024] Specifically, the electrical detection device 100 is used to provide a voltage and can output current signals at the same time. More specifically, the electrical detection device 100 includes an ammeter and a power supply. In some embodiments, the first probe 110, the ammeter, the power supply and the second probe 120 are connected in series. When the first probe 110 and the second probe 120 are in contact with the plating area 510 or the edge-removing area 520, the first probe 110, the ammeter, the power supply, the second probe 120 and the plating area 510 or the edge-removing area 520 are in contact to form an electrical circuit. At this time, the power supply provides a voltage and a current is formed in the electrical circuit, and the ammeter can detect the current signal.

[0025] In some embodiments, refer to Figure 1, both the first probe 110 and the second probe 120 have a detection end 200. During the process of detecting the current signal, both detection ends 200 are in contact with the plating area 510 to detect the current signal on the plating area 510; or both detection ends 200 are in contact with the edge-removing area 520 to detect the current signal on the edge-removing area 520; or one of the two detection ends 200 is in contact with the plating area 510 and the other is in contact with the edge-removing area 520 to detect the change in the current signal during the movement of the first probe 110 and the second probe 120.

[0026] In some specific embodiments, when the detection ends 200 on the first probe 110 and the second probe 120 are both in contact with the plating area 510, it is defined that the electrical detection device 100 outputs a first current signal; when the detection ends 200 on the first probe 110 and the second probe 120 are both in contact with the edge-removing area 520, it is defined that the electrical detection device 100 outputs a second current signal; during the detection process, it is possible to judge whether there is a residue 540 in the edge-removing area 520 according to the changes in the first current signal and the second current signal. For example, when both the first probe 110 and the second probe 120 are moving within the edge-removing area 520, the electrical detection device 100 should keep outputting the second current signal. At this time, when the electrical detection device 100 keeps outputting the first current signal, it indicates that the edge-removing area 520 is completely covered by the residue 540; when the electrical detection device 100 outputs the second current signal and the second current signal increases, it indicates that part of the edge-removing area 520 is covered by the residue 540; when the electrical detection device 100 keeps outputting the second current signal, it indicates that there is no residue 540 in the edge-removing area 520. The specific judgment method will be described later.

[0027] During the detection process, there will be a situation where one of the first probe 110 and the second probe 120 is in contact with the edge-removing area 520 and the other is in contact with the residue 540; in order to facilitate the detection of the height of the residue 540, the first probe 110 and the second probe 120 are set to be telescopic, and the height of the residue 540 can be judged by detecting the degree of telescoping.

[0028] In some embodiments, the detection end 200 is provided with a receiving space 210, and a rolling member 211 and an elastic member 212 are arranged in the receiving space 210. One end of the elastic member 212 abuts against the rolling member 211, so that part of the rolling member 211 is placed outside the receiving space 210 to be in contact with the plating area 510 and / or the edge-removing area 520.

[0029] Specifically, refer to Figure 2, the accommodation space 210 inside the first probe 110 is coaxially arranged with the first probe 110, and the accommodation space 210 on the second probe 120 is coaxially arranged with the second probe 120. The rolling member 211 is spherical and is arranged inside the accommodation space 210; the opening where the accommodation space communicates with the detection end 200 is defined as the accommodation hole. To prevent the rolling ball from detaching from the accommodation space 210, the diameter of the accommodation hole is set to be smaller than the diameter of the rolling ball, so that part of the rolling ball can extend outside the accommodation space 210 without detaching from the accommodation space 210. Further, one end of the elastic member 212 abuts against the rolling member 211, and the other end is fixedly arranged on the side wall or bottom wall of the accommodation space 210. The fixing method is not limited, as long as the position of one end of the elastic member 212 inside the accommodation space 210 does not change. The elastic member 212 abuts against the rolling member 211 and applies a force along the axial direction of the accommodation space 210 to push the rolling member 211 out of the accommodation space 210, so that the rolling member 211 maintains a state where part is outside the accommodation space 210 and part is inside the accommodation space 210; at the same time, the elastic member 212 does not interfere with the rolling of the rolling member 211. During the detection process of the first probe 110 and the second probe 120, the rolling member 211 can be controlled to roll on the plating area 510 and / or the deburring area 520 for detection, or the first probe 110 and the second probe 120 can be controlled to move on the plating area 510 and / or the deburring area 520 at a fixed interval; at the same time, since the side wall of the rolling member 211 is arc-shaped, during the detection process, the first probe 110 and the second probe 120 will not damage the plating area 510 or the deburring area 520. It should be noted that the height of the part of the rolling member 211 exposed outside the accommodation space 210 is higher than the height of the plating area 510 to facilitate the rolling process of the rolling member 211 during the detection process.

[0030] In some specific embodiments, the elastic member 212 is a spring. During the detection process, when the rolling member 211 of the detection end 200 contacts the residue 540, the rolling member 211 moves towards the inside of the accommodation space 210, and the elastic member 212 is compressed. At this time, only the compressed distance of the elastic member 212 needs to be detected to detect the height of the residue 540.

[0031] In some embodiments, both the first probe 110 and the second probe 120 include: A fixing member 410, having a mounting hole 411 at one end; A moving member 420, one end of which is movably arranged in the mounting hole 411, and the other end is the detection end 200. A rotatable rolling member 211 is arranged on the detection end 200; The elastic member 212 is disposed within the mounting hole 411 and abuts against the moving member 420 to push the moving member 420 to move, so that the rolling member 211 contacts the plating region 510 and / or the deburring region 520.

[0032] Specifically, referring to Figure 3 , both the fixing member 410 and the moving member 420 are rod-shaped. An end of the fixing member 410 is provided with a mounting hole 411. The mounting hole 411 is coaxially arranged with the fixing member 410. One end of the moving member 420 passes through the mounting hole 411 and can move axially along the mounting hole 411 within the mounting hole 411; the elastic member 212 is disposed within the mounting hole 411, and one end of the elastic member 212 abuts against the moving member 420, and the other end is fixedly disposed on the bottom wall or side wall of the mounting hole 411. The fixing manner of the elastic member 212 within the mounting hole 411 is not limited, as long as the end of the elastic member 212 does not move within the mounting hole 411. The elastic member 212 applies a force along the axial direction of the mounting hole 411 to the moving member 420 to move the moving member 420 away from the mounting hole 411, so as to facilitate the detection process. In some embodiments, the moving member 420 does not detach from the mounting hole 411 and can move within the mounting hole 411. For example, a protrusion is provided on the side wall of the moving member 420, and a groove is provided on the inner wall of the mounting hole 411. The length direction of the groove is parallel to the axial direction of the mounting hole 411, and the protrusion is inserted into the groove so that the moving member 420 does not detach from the mounting hole 411.

[0033] At the same time, the other end of the moving member 420 is the detection end 200, and the rolling member 211 is rotatably disposed at the detection end 200. Specifically, the rolling member 211 is spherical and is embedded in the detection end 200, so that the rolling member 211 can rotate at the detection end 200 while not detaching from the detection end 200; during the detection process of the first probe 110 and the second probe 120, the rolling member 211 can be controlled to roll on the plating region 510 and / or the deburring region 520 for detection, or the first probe 110 and the second probe 120 can be controlled to move on the plating region 510 and / or the deburring region 520 at a fixed interval; at the same time, since the side wall of the rolling member 211 is arc-shaped, during the detection process, the first probe 110 and the second probe 120 will not damage the plating region 510 or the deburring region 520.

[0034] In some specific embodiments, the elastic member 212 is a spring. During the detection process, when the rolling member 211 at the detection end 200 contacts the residue 540, the moving end and the rolling member 211 move together towards the inside of the mounting hole 411, and the elastic member 212 is compressed. At this time, only the compressed distance of the elastic member 212 needs to be detected to detect the height of the residue 540.

[0035] The detection component 300 is arranged on the elastic component 212 and is electrically connected to the electrical detection device 100. When the elastic component 212 deforms, the detection component 300 generates a resistance value signal, and the electrical detection device 100 outputs the resistance value signal. The deformation distance of the elastic component 212 is calculated according to the resistance value signal.

[0036] To facilitate the detection of the deformation distance of the elastic component 212, referring to Figure 2 and Figure 3 , the detection component 300 is arranged on the elastic component 212. Specifically, the detection component 300 is a resistance strain gauge. When the elastic component 212 deforms, the resistance of the detection component 300 changes. According to the change in the resistance value, the change in the strain value of the resistance strain gauge can be calculated. According to the strain value, the deformation distance of the elastic component 212 can be calculated, and thus the height of the residue 540 can be calculated. The specific calculation method will be described later.

[0037] An embodiment of the present invention further provides a cleaning method, which is applicable to the above detection device and is used to detect the specific shape and position of the residue 540 on the wafer surface. Specifically, referring to Figure 4 , the cleaning method includes: Controlling the first probe 110 and the second probe 120 to reciprocate on the wafer surface at a fixed interval, so that the first probe 110 and the second probe 120 reciprocate through the edge removal area 520; The electrical detection device 100 outputs the current signals generated by the first probe 110 and the second probe 120 during the movement as the first current signal or the second current signal, and judges whether the edge removal area 520 has a residue 540 according to the intensity changes of the first current signal and the second current signal; When there is a residue 540 in the edge removal area 520, one of the first probe 110 and the second probe 120 remains stationary, and the other first moves along the first direction and then moves along the second direction, and the electrical detection device 100 outputs the current signal during the movement process; The control system receives the current signal and draws an image of the residue 540 according to the intensity change of the current signal; Cleaning the edge removal area 520 again according to the image of the residue 540; Repeat the above steps until there is no residue 540 in the edge removal area 520.

[0038] In some embodiments, referring to Figure 1 、 Figure 5 and Figure 6 , a fixed interval is maintained between the first probe 110 and the second probe 120. Specifically, the first probe 110 and the second probe 120 are arranged at intervals along their movement directions. After the first probe 110 and the second probe 120 maintain a fixed interval, the first probe 110 and the second probe 120 are controlled to reciprocate on the wafer surface.

[0039] In some embodiments, the first probe 110 and the second probe 120 reciprocate along the radial direction of the wafer on the wafer surface, and a fixed interval is maintained between two adjacent movement trajectories 530.

[0040] In some specific embodiments, when in the initial state, the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the plating area 510; during the detection process, the detection ends 200 of the first probe 110 and the second probe 120 move along the radial direction of the wafer from the plating area 510 and pass through the edge removal area 520 to form a movement trajectory; after passing through the edge removal area 520, the first probe 110 and the second probe 120 move along the circumferential direction of the wafer and move along the radial direction of the wafer towards the plating area 510 until the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the plating area 510, forming another movement trajectory. It should be noted that the interval at which the first probe 110 and the second probe 120 move along the circumferential direction of the wafer can be set according to the actual situation and is not limited here, mainly to be able to pass through the edge removal area 520 evenly.

[0041] In some more specific embodiments, the width of the edge removal area 520 is about 2.2 mm, that is, the distance from the edge of the plating area 510 to the edge of the wafer is about 2.2 mm; the detection ends 200 of the first probe 110 and the second probe, 120 reciprocate along the radial direction of the wafer from a position 3 mm away from the edge of the wafer in the plating area 510 to detect whether there is a residue 540 in the edge removal area 520

[0042] During the movement of the first probe 110 and the second probe 120, since the conductivity of the plating area 510 and the edge removal area 520 is different, it is possible to determine whether there is a residue in the plating area 510 according to the change in the current signal.

[0043] Control the first probe 110 and the second probe 120 to move from the plating area 510 to the edge removal area 520. During the movement, the electrical detection device 100 keeps outputting a first current signal until the electrical detection device 100 stops outputting a current signal, and it is determined that the residue 540 covers the edge removal area 520.

[0044] In some embodiments, refer to Figure 1 and Figure 7When the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the plating area 510, the electrical detection device 100 keeps outputting a first current signal. That is to say, when both the first probe 110 and the second probe 120 are in contact with the copper material, the electrical detection device 100 keeps outputting a first current signal. Therefore, during the movement of the first probe 110 and the second probe 120 from the plating area 510 to the deburring area 520, the electrical detection device 100 keeps outputting the first current signal until the electrical detection device 100 stops outputting a current signal. When the electrical detection device 100 stops outputting a current signal, at this time, the first probe 110 and the second probe 120 move outside the range of the wafer. Therefore, the above description shows that the detection ends 200 of the first probe 110 and the second probe 120 always remain in contact with the copper material within the deburring area 520. That is, on this detection path, the copper residue 540 covers the entire deburring area 520.

[0045] Since the first probe 110 and the second probe 120 move reciprocally, when the first probe 110 and the second probe 120 move from the edge of the wafer towards the plating area 510, if the electrical detection device 100 keeps outputting the first current signal, then on this detection path, the copper residue 540 covers the entire deburring area 520.

[0046] Control the first probe 110 and the second probe 120 to move from the plating area 510 to the deburring area 520. During the movement, after the first current signal changes to the second current signal, the electrical detection device 100 keeps outputting the second current signal until the electrical detection device 100 stops outputting a current signal, and it is determined that there is no residue 540 in the deburring area 520.

[0047] In some embodiments, refer to Figure 1 and Figure 8When the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the plating area 510, that is, when in contact with the copper material, the electrical detection device 100 keeps outputting a first current signal; when one of the first probe 110 and the second probe 120 is in contact with the plating area 510 and the other is in contact with the edge removal area 520, that is, when one is in contact with the copper material and the other is in contact with the tantalum or tantalum nitride material, the signal intensity output by the electrical detection device 100 is less than the intensity of the first current signal; when the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the edge removal area 520, that is, when in contact with the tantalum or tantalum nitride material, the electrical detection device 100 keeps outputting a second current signal. That is to say, during the movement of the first probe 110 and the second probe 120, when the output signal of the electrical detection device 100 changes from the first current signal to the second current signal, it indicates that the detection ends 200 of the first probe 110 and the second probe 120 are in contact with the edge removal area 520, that is, in contact with the tantalum or tantalum nitride material; when the output signal of the electrical detection device 100 changes to the second current signal and keeps the second current signal until there is no output signal, at this time the first probe 110 and the second probe 120 move outside the range of the wafer. Therefore, on this detection path, there is no residue 540 of copper material in the edge removal area 520.

[0048] Since the first probe 110 and the second probe 120 reciprocate, when the first probe 110 and the second probe 120 move from the edge of the wafer towards the plating area 510, if the output signal of the electrical detection device 100 is the second current signal and changes to and keeps the first current signal during the movement, then on this detection path, there is no residue 540 of copper material in the edge removal area 520. In some specific embodiments, the output signal of the electrical detection device 100 is the second current signal and changes to and keeps the first current signal at a distance of 2.2 mm from the edge of the wafer during the movement, indicating that on this detection path, there is no residue 540 of copper material in the edge removal area 520.

[0049] It should be noted that when the residue 540 coincides with the edge of the plating area 510, it can be judged according to the timing of the change of the first current signal. For example, when the first probe 110 and the second probe 120 move from the plating area 510 along the radial direction of the wafer towards the edge of the wafer, when the first current signal starts to decrease from a distance of 2 mm from the edge of the wafer, it indicates that on this path, there is a residue 540 in the range from 2.2 mm to 2 mm from the edge of the wafer; when the first probe 110 and the second probe 120 move from the edge of the wafer towards the plating area 510, when the first current signal starts to increase from a distance of 2 mm from the edge of the wafer, it indicates that on this path, there is a residue 540 in the range from 2.2 mm to 2 mm from the edge of the wafer.

[0050] Control the movement of the first probe 110 and the second probe 120 from the plating area 510 to the deburring area 520. During the movement, after the first current signal becomes the second current signal, if the second current signal increases or the second current signal first increases and then decreases, it is determined that there is a residue 540 in a part of the deburring area 520.

[0051] In some embodiments, referring to Figure 1 and Figure 9 , when the first current signal output by the electrical detection device 100 becomes the second current signal, it indicates that the detection ends 200 of both the first probe 110 and the second probe 120 are in contact with the tantalum or tantalum nitride material in the deburring area 520.

[0052] During the movement of the first probe 110 and the second probe 120 towards the edge of the wafer, when the second current signal increases and remains until no current signal is output, it indicates that there is a residue 540 in the deburring area 520. The residue 540 has a gap from the edge of the plating area 510 and is placed at the edge of the deburring area 520. Specifically, since the residue 540 is made of copper, during the movement of the first probe 110 and the second probe 120, when one of the probes comes into contact with the residue 540, the intensity of the output signal of the electrical detection device 100 will increase. When it increases and then remains until the electrical detection device 100 outputs no current signal, it indicates that the residue 540 is placed at the edge of the deburring area 520 on this detection path.

[0053] During the movement of the first probe 110 and the second probe 120 towards the edge of the wafer, when the second current signal increases and then decreases and remains until no current signal is output, it indicates that there is a residue 540 in the deburring area 520. The residue 540 has a gap from the edge of the plating area 510 and is placed in the middle of the deburring area 520. Specifically, the increase in the second current signal indicates that one of the first probe 110 and the second probe 120 comes into contact with the copper residue 540 and the other comes into contact with the deburring area 520. On this basis, the decrease in the second current signal indicates that at this time, the first probe 110 and the second probe 120 remain in contact with the deburring area 520. In this state, the residue 540 is placed between the first probe 110 and the second probe 120. If the first probe 110 and the second probe 120 continue to move at this time, it may be that one of the first probe 110 and the second probe 120 moves out of the range of the wafer and the electrical detection device 100 has no output signal, or it may be that the other of the first probe 110 and the second probe 120 passes through the residue 540 and the signal of the electrical detection device 100 increases again; but in either case, it indicates that there is a partial residue 540 in the deburring area 520 on this detection path and the residue 540 is placed in the middle of the deburring area 520 on this detection path.

[0054] Since the first probe 110 and the second probe 120 reciprocate, when the first probe 110 and the second probe 120 move from the edge of the wafer towards the plating region 510, if the output signal of the electrical detection device 100 is the second current signal and increases first and then decreases during the movement, it indicates that there are local residues 540 in the deburring region 520 on this detection path, and the residues 540 are located in the middle of the deburring region 520 on this detection path.

[0055] To further determine the specific image of the residue 540, one of the first probe 110 and the second probe 120 remains stationary, and the other first moves in the first direction and then in the second direction to detect the change in the intensity of the current signal at the residue 540 and output it.

[0056] More specifically, referring to Figure 10 , control the first probe 110 to remain stationary, and the second probe 120 reciprocates in the first direction, and each movement trajectory 530 has an interval in the second direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residue 540 in the first direction.

[0057] Control the first probe 110 to remain stationary, and the second probe 120 reciprocates in the second direction, and each movement trajectory 530 has an interval in the first direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residue 540 region in the second direction.

[0058] Specifically, here, when the first probe 110 and the second probe 120 move from the plating region 510 towards the edge of the wafer, with the second probe 120 in front and the first probe 110 behind as an example, that is, during the movement, the second probe 120 first contacts the residue 540. After the second probe 120 contacts the residue 540, at this time, it is necessary to control the movement of the second probe 120 to reciprocate past the residue 540 at different positions to output the signal change and draw the boundary image of the residue 540 according to the signal intensity change.

[0059] In some embodiments, the first probe 110 is controlled to remain stationary, and the second probe 120 first moves along a first direction and then along a second direction to draw the boundary shape of the residue 540 region in the first direction and the boundary shape in the second direction. Specifically, after the second probe 120 contacts the residue 540, a rectangular coordinate system is established with the second probe 120 as the origin, where the X-axis direction is the first direction and the Y-axis direction is the second direction; the second probe 120 reciprocates along the first direction, and each movement trajectory 530 has an interval in the second direction. At the same time, the interval size between each trajectory is not limited here, mainly to be able to detect the boundary of the residue 540, and the interval between each movement trajectory 530 can be set according to specific circumstances during actual use. More specifically, during the movement of the second probe 120, it first reciprocates along the X-axis direction from the origin, and each movement has an interval in the positive Y-axis direction until there is no contact between the second probe 120 and the residue 540; then it reciprocates along the X-axis direction from the origin, and each movement has an interval in the negative Y-axis direction until there is no contact between the second probe 120 and the residue 540; when the intensity of the second current signal output by the electrical detection device 100 increases, the second probe 120 contacts one side wall of the residue 540 on the X-axis; when the intensity of the second current signal output by the electrical detection device 100 decreases, the second probe 120 contacts the other side wall of the residue 540 on the X-axis; thereby drawing the boundary range of the residue 540 in the X-axis direction.

[0060] In some embodiments, after the boundary range of the residue 540 in the X-axis direction is drawn, the first probe 110 is still controlled to remain stationary, and the second probe 120 reciprocates along the second direction, and each movement trajectory 530 has an interval in the first direction; the interval size between each trajectory is not limited here, mainly to be able to detect the boundary of the residue 540, and the interval between each movement trajectory 530 can be set according to specific circumstances during actual use. More specifically, during the movement of the second probe 120, it first reciprocates along the Y-axis direction from the origin, and each movement has an interval in the positive X-axis direction until there is no contact between the second probe 120 and the residue 540; then it reciprocates along the Y-axis direction from the origin, and each movement has an interval in the negative X-axis direction until there is no contact between the second probe 120 and the residue 540; when the intensity of the second current signal output by the electrical detection device 100 increases, the second probe 120 contacts one side wall of the residue 540 on the Y-axis; when the intensity of the second current signal output by the electrical detection device 100 decreases, the second probe 120 contacts the other side wall of the residue 540 on the Y-axis; thereby drawing the boundary range of the residue 540 in the Y-axis direction.

[0061] According to the strength change of the current signal output by the electrical detection device 100, the control system can draw the boundaries of the residue 540 in the X-axis direction and the Y-axis direction, and combining the two boundaries can obtain the boundary of the residue 540. More specifically, the control system is electrically connected to the electrical detection device 100 and can record the positions where the current signal output by the electrical detection device 100 increases or decreases, so as to draw the image of the residue 540; this is prior art and will not be elaborated here. After the image boundary of the residue 540 is drawn, the deburring area 520 is cleaned again according to the image of the residue 540 until there is no residue 540 in the deburring area 520.

[0062] In some embodiments, when cleaning the residue 540, it can also be cleaned in combination with the height parameter and the range parameter of the residue 540. Specifically, when the elastic member 212 deforms, the resistance value of the detection member 300 changes and an electrical signal is generated; the control system receives the electrical signal sent by the detection member 300 and calculates and outputs the deformation distance of the elastic member 212. More specifically, when the resistance strain gauge is pasted on the surface of the spring, when the spring is stressed and deforms, the strain gauge will also deform slightly. This deformation will cause changes in the length and cross-sectional area of the strain gauge, thereby causing changes in the resistance value.

[0063] In some embodiments, the detection member 300 is a resistance strain gauge, and the detection member 300 is electrically connected to the electrical detection device 100. In order to be able to receive the electrical signal sent by the detection member 300, the electrical detection device 100 also includes a measuring instrument, such as a resistance strain gauge; at the same time, the resistance strain gauge is electrically connected to the control system to transmit the signal to the control system and calculate the deformation distance of the elastic member 212 in the control system.

[0064] More specifically, the deformation distance of the elastic member 212 is calculated according to the following formula:

[0065] Wherein, ΔR is the resistance change amount of the detection member 300; R is the original resistance value of the detection member 300; G is the sensitivity coefficient of the detection member 300; L is the initial length of the detection member 300.

[0066] Wherein, the initial length L of the detection member 300 is set to the length when the rolling member 211 contacts the deburring area 520. Therefore, whether the rolling member 211 contacts the plating area 510 or the residue 540, a resistance change amount can be generated, and the deformation distance of the elastic member 212 can be calculated according to the resistance change amount.

[0067] The implementation principle of a detection device and a cleaning method for residues on the surface of a wafer in an embodiment of the present application is to control the first probe 110 and the second probe 120 to move on the surface of the wafer and reciprocate through the edge removal area 520 to detect whether there are residues 540 on the edge removal area 520. When there are residues 540, one of the first probe 110 and the second probe 120 remains stationary, and the other passes through the residues 540 multiple times in the first direction and the second direction. The control system draws the boundary image of the residues 540 according to the change in the intensity of the current signal output by the electrical detection device 100, so as to more accurately determine the range of the residues 540 and facilitate the subsequent cleaning process.

[0068] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A detection device for residues on the surface of a wafer, wherein the surface of the wafer includes a plating region (510) and a bevel region (520), and the bevel region (520) surrounds the plating region (510); characterized in that, The detection device includes: An electrical detection device (100) for providing voltage; A first probe (110) and a second probe (120), both electrically connected to the electrical detection device (100). The first probe (110) and the second probe (120) both have a detection end (200), and the detection end (200) contacts the plating area (510) and / or the deburring area (520). The electrical detection device (100) provides voltage to the first probe (110) and the second probe (120) to form an electrical circuit between the electrical detection device (100), the first probe (110), the second probe (120), and the wafer and pass current. The electrical detection device (100) outputs the current signals detected by the first probe (110) and the second probe (120); When the detection ends (200) on the first probe (110) and the second probe (120) both contact the plating area (510), the electrical detection device (100) outputs a first current signal; When the detection ends (200) on the first probe (110) and the second probe (120) both contact the deburring area (520), the electrical detection device (100) outputs a second current signal; Within the deburring area (520), when the electrical detection device (100) keeps outputting the first current signal, the deburring area (520) is covered by residues (540); when the electrical detection device (100) outputs the second current signal and the second current signal increases, part of the deburring area (520) is covered by the residues (540); when the electrical detection device (100) keeps outputting the second current signal, there are no residues (540) in the deburring area (520).

2. The detection device according to claim 1, wherein The detection end (200) is provided with an accommodation space (210), and a rolling member (211) and an elastic member (212) are arranged in the accommodation space (210). One end of the elastic member (212) abuts against the rolling member (211) so that part of the rolling member (211) is placed outside the accommodation space (210) to contact the plating area (510) and / or the deburring area (520); A detection member (300) is arranged on the elastic member (212) and is electrically connected to the electrical detection device (100). The detection member (300) generates a resistance value signal when the elastic member (212) deforms, and the electrical detection device (100) receives the resistance value signal and calculates the deformation distance of the elastic member (212).

3. The detection device according to claim 1, characterized in that, The first probe (110) and the second probe (120) both include: A fixing member (410) having a mounting hole (411) at one end; A moving member (420) having one end movably arranged in the mounting hole (411) and the other end being the detection end (200), and a rolling member (211) is rotatably arranged on the detection end (200); The elastic member (212) is disposed in the mounting hole (411) and abuts against the moving member (420) to push the moving member (420) to move, so that the rolling member (211) contacts the plating region (510) and / or the deburring region (520); The detecting member (300) is disposed on the elastic member (212) and is electrically connected to the electrical detecting device (100). The detecting member (300) generates a resistance value signal when the elastic member (212) deforms. The electrical detecting device (100) outputs the resistance value signal, and calculates the deformation distance of the elastic member (212) according to the resistance value signal.

4. A cleaning method for residues on the surface of a wafer, characterized in that, Cleaning is performed according to the detection result of the detection device according to any one of claims 1-3. The cleaning method includes: Controlling the first probe (110) and the second probe (120) to reciprocate on the wafer surface at a fixed interval, so that the first probe (110) and the second probe (120) reciprocate through the deburring region (520); The electrical detecting device (100) outputs the current signals generated by the first probe (110) and the second probe (120) during the movement as a first current signal or a second current signal, and determines whether there is a residue (540) in the deburring region (520) according to the intensity changes of the first current signal and the second current signal; When there is a residue (540) in the deburring region (520), control one of the first probe (110) and the second probe (120) to remain stationary, and the other first moves in a first direction and then in a second direction. The electrical detecting device (100) outputs the current signal during the movement; The control system receives the current signal and draws an image of the residue (540) according to the intensity change of the current signal; Clean the deburring region (520) again according to the image of the residue (540); Repeat the above steps until there is no residue (540) in the deburring region (520).

5. The cleaning method according to claim 4, wherein, The electrical detecting device (100) outputs the current signals generated by the first probe (110) and the second probe (120) during the movement as a first current signal or a second current signal, and determines whether there is a residue (540) in the deburring region (520) according to the intensity changes of the first current signal and the second current signal, including: Controlling the first probe (110) and the second probe (120) to move from the plating region (510) to the deburring region (520). During the movement, the electrical detecting device (100) keeps outputting the first current signal until the electrical detecting device (100) has no current signal output, and determines that the residue (540) covers the deburring region (520).

6. The cleaning method according to claim 4, characterized in that, The electrical detection device (100) outputs the current signals generated by the first probe (110) and the second probe (120) during movement as a first current signal or a second current signal. Judging whether the deburring area (520) has residues (540) according to the intensity changes of the first current signal and the second current signal includes: Controlling the first probe (110) and the second probe (120) to move from the plating area (510) to the deburring area (520). During the movement, after the first current signal becomes the second current signal, the electrical detection device (100) keeps outputting the second current signal until the electrical detection device (100) outputs no current signal, and it is determined that the deburring area (520) has no such residues (540).

7. The cleaning method according to claim 4, characterized in that The electrical detection device (100) outputs the current signals generated by the first probe (110) and the second probe (120) during movement as a first current signal or a second current signal. Judging whether the deburring area (520) has residues (540) according to the intensity changes of the first current signal and the second current signal includes: Controlling the first probe (110) and the second probe (120) to move from the plating area (510) to the deburring area (520). During the movement, after the first current signal becomes the second current signal, if the second current signal increases or the second current signal first increases and then decreases, it is determined that part of the deburring area (520) has such residues (540).

8. The cleaning method according to claim 7, wherein The control system receives the intensity changes of the current signal and draws an image of the residues (540) according to the intensity changes of the current signal, including: Controlling the first probe (110) to remain stationary, and the second probe (120) reciprocates along a first direction, and each movement track (530) has an interval in a second direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residues (540) in the first direction.

9. The cleaning method according to claim 8, wherein The control system receives the intensity changes of the current signal and draws an image of the residues (540) according to the intensity changes of the current signal, and further includes: Controlling the first probe (110) to remain stationary, and the second probe (120) reciprocates along a second direction, and each movement track (530) has an interval in the first direction. When the second current signal increases or decreases, the control system marks at the corresponding position to draw the boundary shape of the residues (540) area in the second direction.

10. The cleaning method according to any one of claims 4 to 9, characterized in that: When the elastic member (212) deforms, the resistance value of the detection member (300) changes and an electrical signal is generated; the control system receives the electrical signal sent by the detection member (300), calculates and outputs the deformation distance of the elastic member (212).

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