High-performance silicon waveguide heterogeneous integrated thermo-optical modulator and preparation method thereof

Abstract

The invention discloses a high-performance silicon waveguide heterogeneous integrated thermo-optical modulator which comprises a substrate, a waveguide is arranged on the substrate, a 1T '-MoTe2 film directly grows on the surface of the waveguide, and a metal electrode is arranged on the 1T'-MoTe2 film. By directly growing the 1T '-MoTe2 thin film on the silicon waveguide, the limitation of a thick SiO2 cladding in a traditional thermo-optical modulator is eliminated, the heat transfer efficiency and the modulation efficiency are remarkably improved, the heat transfer efficiency can reach 82.73 K.mu m / mW, the modulation efficiency is 0.396 Pi. MW <-1 >, and compared with a traditional scheme, the heat transfer efficiency and the modulation efficiency are improved by 5-6 times; the power consumption is reduced, only 7.93 mW is needed to realize pi phase modulation, and the optical loss is reduced.

Description

Technical Field

[0001] This application belongs to the field of semiconductor devices, and particularly relates to a high-performance silicon waveguide heterogeneous integrated thermo-optic modulator, a preparation method, and an electronic device. Background Art

[0002] A thermo-optic modulator is an optical device that modulates optical signals by utilizing the thermo-optic effect. The thermo-optic effect refers to the change in the refractive index of a material with temperature. Research shows that this device can control the phase or amplitude of light by controlling the temperature of the waveguide and is widely used in the field of integrated photonics. Thermo-optic modulators can control the phase and amplitude of light and are suitable for various applications, such as optical switches, temperature sensors, optical communication, lidar, etc.

[0003] The typical structure of a thermo-optic modulator includes: an optical waveguide, usually made of silicon, which is placed on a silicon-on-insulator (SOI) platform because its refractive index changes significantly with temperature; a cladding, generally silica, which provides optical isolation and protection and is located above the waveguide; a heater, generally made of titanium, tungsten, doped silicon, or silicide, which is located above the cladding and is used to control the temperature. The structure is generally such that the waveguide is covered with a cladding and the heater is located on top of the cladding. Its detailed working principle is that when the heater is energized, heat is generated, raising the temperature of the waveguide and changing its refractive index. This change affects the effective refractive index of light, thereby changing the optical path and phase.

[0004] As described in the above structure of the thermo-optic modulator, a thick silica cladding needs to be covered between the waveguide and the metal heater. This is usually because the metal heater itself has strong optical absorption loss for light. Therefore, if there is no cladding and the metal heater is directly covered above the waveguide, the light transmitted in the waveguide will be lost, causing the optical device to fail. However, the thickness of the cladding itself and its extremely low thermal conductivity will seriously reduce the efficiency and time of heat transfer from the metal heater to the waveguide, ultimately resulting in a decrease in the tuning efficiency and modulation speed of the thermo-optic modulator.

[0005] Therefore, there is an urgent need for a thermo-optic modulator that can solve the above problems. Summary of the Invention

[0006] To solve the deficiencies of the existing technology described above, this application provides a high-performance silicon waveguide heterogeneous integrated thermo-optic modulator, a preparation method, and an electronic device. Based on an in-situ integrated 1T'-MoTe2 thin film without-cladding Mach-Zehnder modulator (MZM), it utilizes its semimetal characteristics to simultaneously achieve efficient electrothermal conversion and low optical loss.

[0007] The technical effects to be achieved by this application are realized through the following solutions: According to the first aspect of the present application, a high-performance silicon waveguide heterogeneously integrated thermo-optic modulator is provided, including a substrate, on which a waveguide is disposed, a 1T'-MoTe2 thin film is directly grown on the surface of the waveguide, and a metal electrode is disposed on the 1T'-MoTe2 thin film.

[0008] Preferably, a silicon-based insulator is used to form the substrate and the waveguide. The silicon-based insulator includes a silicon top layer and a SiO2 buried layer. The SiO2 buried layer serves as the substrate, and the silicon top layer forms the waveguide.

[0009] Preferably, the thickness of the silicon top layer is 220 nm, and the thickness of the SiO2 buried layer is 3 μm.

[0010] According to the second aspect of the present application, a method for preparing the above high-performance silicon waveguide heterogeneously integrated thermo-optic modulator is provided, including the following steps: Step 1: Grow a 1T'-MoTe2 thin film on a silicon-based insulator substrate; Step 2: Use photolithography to prepare a waveguide structure and pattern the 1T'-MoTe2 thin film to form a modulation region, and prepare a metal electrode in the modulation region; Step 3: After performing optical characteristic measurement and dynamic response test, complete the preparation of the high-performance silicon waveguide heterogeneously integrated thermo-optic modulator.

[0011] Preferably, in Step 1, the specific method for growing a 1T'-MoTe2 thin film on a silicon-based insulator substrate is as follows: Deposit a molybdenum thin film on the silicon-based insulator substrate by magnetron sputtering; Place the silicon-based insulator substrate deposited with the molybdenum thin film and tellurium powder in a horizontal hot-wall tube furnace for reaction to generate a 1T'-MoTe2 thin film.

[0012] Preferably, the thickness of the molybdenum thin film is 20 nm; the reaction parameters of the horizontal hot-wall tube furnace are: in an environment of 5 sccm of argon and 7 sccm of hydrogen, heat up to 600–700 °C, keep warm for 10–20 minutes for the growth of the 1T'-MoTe2 thin film, and naturally cool to room temperature after the growth is completed to complete the preparation of the 1T'-MoTe2 thin film.

[0013] Preferably, in Step 2, the specific method for using photolithography to prepare a waveguide structure and pattern the 1T'-MoTe2 thin film to form a modulation region is as follows: Spin-coat a photoresist on the silicon-based insulator substrate, and use an electron beam exposure system to draw the waveguide pattern of the Mach-Zehnder modulator on the photoresist; Adopt an ICP etching method to form an optical waveguide structure on the exposed silicon top layer; Spin-coat photoresist on the surface of the 1T'-MoTe2 film again, perform the second electron beam lithography, and define the modulation region; Use the ICP etching method to remove the 1T'-MoTe2 film outside the waveguide arms to form the modulation region.

[0014] Preferably, the specific method for fabricating the metal electrodes in the modulation region is as follows: After spin-coating the photoresist, use electron beam lithography to draw the electrode pattern in the corresponding region; Deposit Cr / Au in the drawn electrode pattern by electron beam evaporation to form the metal electrodes.

[0015] Preferably, in step 3, the specific method for performing the optical characteristic measurement is: use a tunable light source as the signal light source, couple it into the waveguide through a single-mode optical fiber, and the modulated output optical signal is spectroscopically measured by a spectrometer to analyze the insertion loss and extinction ratio of the modulator; The specific method for the dynamic response test is: apply a DC or pulsed voltage to the metal electrodes using a precision source meter; the modulated output optical signal is converted into an electrical signal by a high-speed photodetector, and the dynamic response curve is recorded by an oscilloscope to evaluate the modulation speed and stability.

[0016] According to the third aspect of the present application, an electronic device is provided, which adopts the above-mentioned high-performance silicon waveguide heterogeneous integrated thermo-optic modulator.

[0017] According to an embodiment of the present application, the beneficial effects of adopting the high-performance silicon waveguide heterogeneous integrated thermo-optic modulator of the present application are as follows: By directly growing the 1T'-MoTe2 film on the silicon waveguide, the limitation of the thick SiO2 cladding in the traditional thermo-optic modulator is eliminated, and the heat transfer efficiency and modulation efficiency are significantly improved. The heat transfer efficiency can reach 82.73 K·μm³ / mW, and the modulation efficiency is 0.396 π·mW -1 , which is 5-6 times higher than the traditional scheme; the power consumption is reduced, and only 7.93 mW is required to achieve π-phase modulation, reducing the optical loss (0.01 dB / μm at a wavelength of 1550 nm); At the same time, the optimized CVD process realizes the growth of large-area 1T'-MoTe2 films, solves the problems of large-area growth and complex transfer of two-dimensional materials, improves the integration density and scalability of the device, and provides an efficient and low-power solution for high-performance optical communication and optical sensing applications. Description of the Drawings

[0018] To more clearly illustrate the embodiments of the present application or the existing technical solutions, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the existing technical solutions. Obviously, the accompanying drawings in the following description are only some embodiments recorded in the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0019] Figure 1 It is a schematic structural diagram of a high-performance silicon waveguide heterogeneously integrated thermo-optic modulator in an embodiment of the present application; Figure 2 It is the temperature distribution of the 1T'-MoTe2 heater and the Au heater, as well as the distribution of the temperature change along the x-axis and z-axis; Figure 3 It is the Raman mapping and Raman spectrum of the 1T'-MoTe2 thin film; Figure 4 It is a flowchart of a preparation method of a high-performance silicon waveguide heterogeneously integrated thermo-optic modulator in an embodiment of the present application. Detailed implementation manners

[0020] To make the purpose, technical solutions and advantages of the present application clearer, the following will clearly and completely describe the technical solutions of the present application in conjunction with specific embodiments and the corresponding accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0021] As Figure 1 shown, a high-performance silicon waveguide heterogeneously integrated thermo-optic modulator in an embodiment of the present application includes a substrate. A waveguide is provided on the substrate. A monoclinic molybdenum telluride thin film, that is, a 1T'-MoTe2 thin film (hereinafter collectively referred to as the 1T'-MoTe2 thin film), is directly grown on the surface of the waveguide. A metal electrode is provided on the 1T'-MoTe2 thin film. The metal electrode is located at both ends of the MZM modulation arm. The metal electrode is a Cr / Au electrode and is used to heat the 1T'-MoTe2 thin film.

[0022] The substrate and the waveguide are formed by silicon-on-insulator. The silicon-on-insulator includes a silicon top layer and a SiO2 buried layer. The thickness of the silicon top layer is 220 nm, and the thickness of the SiO2 buried layer is 3 μm. The SiO2 buried layer is the substrate, and the silicon top layer forms the waveguide.

[0023] As a two-dimensional material, the 1T'-MoTe2 thin film has semi-metallic properties, a high refractive index, and excellent thermal conductivity.

[0024] In this embodiment, by directly growing a 1T'-MoTe2 thin film on a silicon material waveguide, its semimetal characteristics are utilized to simultaneously achieve efficient electrothermal conversion and low optical loss, eliminating the limitation of the thick SiO2 cladding in traditional thermo-optic modulators, significantly improving the heat transfer efficiency and modulation efficiency. The heat transfer efficiency can reach 82.73 K·μm³ / mW, and the modulation efficiency is 0.396 π·mW-1, which is 5-6 times higher than the traditional scheme; the power consumption is reduced, and only 7.93 mW is required to achieve π-phase modulation, reducing the optical loss (0.01 dB / μm at a wavelength of 1550 nm).

[0025] Through specific experimental analysis, such as Figure 2 the temperature distributions of the 1T'-MoTe2 heater and the Au heater as shown, and the distributions of temperature changes along the x-axis and z-axis, it can be seen that On the left, based on the material conductivity (1T'-MoTe2: 1.7 × 10 5 S / m; Au: 2.5 × 10 7 S / m) and the actual heat dissipation boundary conditions, the three-dimensional temperature distributions of 1T'-MoTe2 and the gold heater in the waveguide under 6.6 mW of electric power are simulated; Under steady-state conditions, 1T'-MoTe2 concentrates most of the heat inside the waveguide, while the gold heater mainly retains the heat in the electrode region. This difference stems from the difference in their structural designs: The heat conduction advantage of the uncladded design above: 1T'-MoTe2 adopts an uncladded design and can directly transfer heat to the silicon waveguide; While the cladding limitation of the gold heater below: Due to the uniform heat diffusion of the surrounding SiO2 cladding (thermal conductivity 1.4 W / (m·K)) of the gold heater, the efficient transmission of heat to the silicon waveguide is restricted.

[0026] On the right, evaluating the lateral (x-axis) and longitudinal (z-axis) heat diffusion characteristics of the two heaters, it can be seen that Comparison of heat diffusion in the x-axis direction: 1T'-MoTe2 heater: The heat is mainly restricted inside the waveguide core layer (the lateral full width at half maximum FWHM is only 1.24 μm), indicating its excellent lateral localization ability.

[0027] Gold heater: The heat diffuses significantly to both sides of the waveguide (the lateral FWHM reaches 3.8 μm).

[0028] Difference in heat diffusion in the z-axis direction: 1T'-MoTe2 heater: The temperature gradient is significantly reduced (longitudinal ΔT < 12 K), and the heat diffusion range is limited within 5 μm above the waveguide; Gold heater: induces a highly non-uniform temperature field around the waveguide.

[0029] As Figure 3 can be seen from the Raman mapping and Raman spectra of the 1T'-MoTe2 thin film of The left figure shows the Raman imaging results of a 250μm×250μm area, confirming the spatial uniformity of the in-situ grown 1T'-MoTe2 nanosheets, indicating their high quality and stability; The right figure shows that under the excitation of a 532 nm laser, the Raman spectrum detected five sharp Ag modes located at 80, 110, 129, 164 and 261 cm⁻¹, as well as a Bg mode at 191 cm⁻¹, which are the characteristic peaks of traditional 1T'-MoTe2.

[0030] As Figure 4 shown, an embodiment of the present application discloses a preparation method of the above-mentioned high-performance silicon waveguide heterointegrated thermo-optic modulator, including the following steps: Step 1: Grow a 1T'-MoTe2 thin film on a silicon-on-insulator substrate; In this step, a commercial silicon-on-insulator (SOI) substrate is used, which has a 220 nm thick silicon top layer and a 3μm thick SiO2 buried layer. The single-crystalline silicon top layer serves as the core layer of the optical waveguide, and the SiO2 buried layer is used for optical isolation to reduce substrate loss.

[0031] [[ID=,21]]Grow a 20 nm thick 1T'-MoTe2 thin film on the SOI substrate by chemical vapor deposition (CVD). The specific steps are as follows: First, deposit a molybdenum (Mo) thin film: Deposit a layer of about 20 nm thick molybdenum thin film on the SOI substrate using magnetron sputtering. The film thickness is controlled by the sputtering time. The sputtering parameters in this step are: in an argon (Ar) atmosphere, power 100 W, substrate temperature 300°C, to ensure film uniformity; Then, grow the 1T'-MoTe2 thin film by chemical vapor deposition (CVD): Prepare the growth environment: Use a vacuum pump and a mass flow controller to evacuate the equipped horizontal hot-wall tube furnace to a pressure below 1mTorr. Then, introduce argon (Ar) to flush the furnace cavity and stabilize at atmospheric pressure; Place the SOI substrate deposited with Mo in the right temperature zone of the horizontal hot-wall tube furnace, and place high-purity tellurium (Te) powder in the left temperature zone; Introduce 5 sccm (standard cubic centimeters per minute) of argon (Ar) and 7 sccm of hydrogen (H2). Hydrogen is used to promote the reaction between Te vapor and the Mo thin film; Heat to 600–700 °C (preferably 650 °C) and hold for 10–20 minutes (preferably 15 minutes) to react Mo with Te to form a monoclinic 1T'-MoTe2 thin film; after growth is completed, the furnace body is naturally cooled to room temperature to avoid phase transformation (such as transformation into the 2H phase). The thickness of the 1T'-MoTe2 thin film after the reaction is 20 nm. This process uses the standard chemical vapor deposition (CVD) method to promote the conversion of the Mo thin film into a large-area 1T'-MoTe2 thin film.

[0032] By finely controlling the growth temperature and duration, the uniformity of the 1T'-MoTe2 thin film and the size of its single crystal domains can be precisely controlled.

[0033] Step 2: Prepare the waveguide structure by photolithography and pattern the 1T'-MoTe2 thin film to form a modulation region, and fabricate metal electrodes in the modulation region; In this step, first pattern the optical waveguide and modulator structure. The specific method is as follows: Spin-coat a positive photoresist of polymethyl methacrylate (PMMA A10) on the SOI substrate, with a thickness of about 200 nm; Use an electron beam exposure system to draw the waveguide pattern of the Mach-Zehnder modulator (MZM) on the PMMA; After development, use inductively coupled plasma (ICP) etching with a gas composition of a mixture of carbon tetrafluoride (CF4) and oxygen (O2) to etch the exposed silicon layer to form an optical waveguide structure; the prepared waveguide structure is a silicon ridge waveguide of 220 nm × 600 nm.

[0034] Then pattern the 1T'-MoTe2 thin film. The specific method is as follows: Spin-coat PMMA photoresist on the surface of the 1T'-MoTe2 thin film again and perform second electron beam lithography to define the modulation region (such as the covered region on the waveguide arm); Use ICP etching to remove the 1T'-MoTe2 thin film outside the waveguide arm, leaving the key modulation region.

[0035] Finally, fabricate the metal electrodes. The specific method is as follows: Define the electrode pattern by electron beam lithography: Design the electrode contact area near the 1T'-MoTe2 modulation region and use EBL to expose the electrode pattern; Deposit the metal electrodes using the process of electron beam evaporation (EBE): The metal electrode is supported by gold. It is also possible to first deposit a 10 nm thick chromium (Cr) as an adhesion layer and then deposit a 100 nm thick gold (Au) to form a low-resistance electrode; Finally, the lift-off process is adopted to remove the redundant metal, completing the preparation of the metal electrode.

[0036] Step 3: After performing optical characteristic measurement and dynamic response test, the preparation of the high-performance silicon waveguide heterogeneously integrated thermo-optic modulator is completed.

[0037] In this step, the specific method for performing optical characteristic measurement is as follows: using a tunable laser source (Santec TSL-550) as the input signal, with the wavelength range covering the communication band (such as 1500–1600 nm); Couple the optical signal into the input waveguide of the modulator through a single-mode optical fiber; The modulated optical signal is led out through the output waveguide and connected to a high-resolution spectrometer (Horiba iHR350) to analyze parameters such as the insertion loss and extinction ratio of the modulator.

[0038] The specific method for dynamic response test is as follows: using a precision source meter (Keithley 2400) to apply a DC or pulsed voltage to the metal electrode, regulating the carrier concentration of the 1T'-MoTe2 thin film to achieve refractive index modulation; The output optical signal is converted into an electrical signal by a high-speed photodetector (Photodetector, PD), and the dynamic response curve is recorded by an oscilloscope to evaluate the modulation speed (such as 3 dB bandwidth) and stability.

[0039] In the above method, an optimized CVD process is adopted to achieve the growth of large-area 1T'-MoTe2 thin films, solve the problems of large-area growth and complex transfer of two-dimensional materials, improve the integration density and scalability of the device, and provide an efficient and low-power solution for high-performance optical communication and optical sensing applications.

[0040] According to the third aspect of the present application, an electronic device is provided, which adopts the above-mentioned high-performance silicon waveguide heterogeneously integrated thermo-optic modulator.

[0041] According to an embodiment of the present application, the beneficial effects of adopting the high-performance silicon waveguide heterogeneously integrated thermo-optic modulator of the present application are as follows: By directly growing a 1T'-MoTe2 thin film on the silicon waveguide, the limitation of the thick SiO2 cladding in the traditional thermo-optic modulator is eliminated, significantly improving the heat transfer efficiency and modulation efficiency, where the heat transfer efficiency can reach 82.73 K·μm³ / mW and the modulation efficiency is 0.396 π·mW -1 , which is 5-6 times higher than the traditional scheme; the power consumption is reduced, only 7.93 mW is required to achieve π-phase modulation, and the optical loss is reduced (0.01 dB / μm at a wavelength of 1550 nm); Meanwhile, the optimized CVD process enables the growth of large-area 1T'-MoTe2 thin films, solves the problems of large-area growth and complex transfer of two-dimensional materials, improves the integration density and scalability of devices, and provides an efficient and low-power solution for high-performance optical communication and optical sensing applications.

[0042] It should be noted that the above detailed description is exemplary and is intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs.

[0043] Note that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0044] It should be noted that the terms "first", "second", etc. in the specification, claims and drawings of the present application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be interchanged under appropriate circumstances so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein.

[0045] In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units need not be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0046] For ease of description, spatial relative terms such as "above", "over", "on the upper surface", "upper" etc. may be used herein to describe the spatial positional relationship of one device or feature to other devices or features as shown in the figures. It should be understood that the spatial relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is inverted, a device described as "above" or "over" other devices or structures will then be oriented "below" or "under" the other devices or structures. Thus, the exemplary term "above" can include both the orientations of "above" and "below". The device may also be otherwise positioned, such as rotated 90 degrees or in other orientations, and the corresponding explanations for the spatial relative descriptions used herein will be made.

[0047] In the foregoing detailed description, reference has been made to the accompanying drawings, which form a part hereof. In the drawings, like symbols typically identify like components, unless the context indicates otherwise. The illustrated embodiments described in the detailed description, the drawings, and the claims are not meant to be limiting. Other embodiments may be used and other changes may be made without departing from the spirit or scope of the subject matter presented herein.

[0048] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high-performance silicon waveguide heterogeneous integrated thermo-optic modulator, comprising a substrate, wherein a waveguide is disposed on the substrate, and is characterized in that A 1T'-MoTe2 thin film is directly grown on the waveguide surface, and metal electrodes are arranged on the 1T'-MoTe2 thin film.

2. The high-performance silicon waveguide heterogeneous integrated thermo-optic modulator according to claim 1, wherein The substrate and the waveguide are formed by a silicon-based insulator, the silicon-based insulator includes a silicon top layer and a SiO2 buried layer, the SiO2 buried layer serves as the substrate, and the silicon top layer forms the waveguide.

3. The high-performance silicon waveguide heterogeneous integrated thermo-optic modulator according to claim 2, characterized in that The thickness of the silicon top layer is 220 nm, and the thickness of the SiO2 buried layer is 3 μm.

4. A method for preparing a high-performance silicon waveguide heterogeneous integrated thermo-optic modulator according to any one of claims 1 to 3, characterized in that, It includes the following steps: Step 1: Grow a 1T'-MoTe2 thin film on a silicon-based insulator substrate; Step 2: Use photolithography to prepare a waveguide structure and pattern the 1T'-MoTe2 thin film to form a modulation region, and prepare metal electrodes in the modulation region; Step 3: After performing optical characteristic measurement and dynamic response test, complete the preparation of a high-performance silicon waveguide heterogeneous integrated thermo-optic modulator.

5. The preparation method according to claim 4, characterized in that, In Step 1, the specific method for growing a 1T'-MoTe2 thin film on a silicon-based insulator substrate is: Deposit a molybdenum thin film on a silicon-based insulator substrate by magnetron sputtering; Place the silicon-based insulator substrate deposited with the molybdenum thin film and tellurium powder in a horizontal hot-wall tube furnace for reaction to generate a 1T'-MoTe2 thin film.

6. The preparation method according to claim 5, characterized in that The thickness of the molybdenum thin film is 20 nm; the reaction parameters of the horizontal hot-wall tube furnace are: in an environment of 5 sccm of argon and 7 sccm of hydrogen, heat up to 600–700 °C, keep warm for 10–20 minutes for the growth of the 1T'-MoTe2 thin film, and naturally cool to room temperature after the growth is completed to complete the preparation of the 1T'-MoTe2 thin film.

7. The preparation method according to claim 4, characterized in that, In Step 2, the specific method for using photolithography to prepare a waveguide structure and pattern the 1T'-MoTe2 thin film to form a modulation region is: Spin-coat a photoresist on a silicon-based insulator substrate, and use an electron beam exposure system to draw the waveguide pattern of a Mach-Zehnder modulator on the photoresist; Adopt an ICP etching method to form an optical waveguide structure on the exposed silicon top layer; Spin-coat a photoresist on the surface of the 1T'-MoTe2 thin film again, perform a second electron beam lithography to define the modulation region; Adopt an ICP etching method to remove the 1T'-MoTe2 thin film outside the waveguide arms to form a modulation region.

8. The preparation method according to claim 4, characterized in that, The specific method for preparing metal electrodes in the modulation region is: After spin-coating the photoresist, use electron beam lithography to draw the electrode pattern in the corresponding region; Deposit Cr / Au in the drawn electrode pattern by electron beam evaporation to form metal electrodes.

9. The preparation method according to claim 4, wherein In Step 3, the specific method for performing optical characteristic measurement is: Use a tunable light source as the signal light source, couple it into the waveguide through a single-mode optical fiber, and the modulated output optical signal is spectroscopically measured by a spectrometer to analyze the insertion loss and extinction ratio of the modulator; The specific method for dynamic response test is: Apply a DC or pulsed voltage to the metal electrode using a precision source meter; the modulated output optical signal is converted into an electrical signal by a high-speed photodetector, and the dynamic response curve is recorded by an oscilloscope to evaluate the modulation speed and stability.

10. An electronic device, characterized in that, Adopt the high-performance silicon waveguide heterogeneous integrated thermo-optic modulator according to any one of claims 1 to 3.

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