Method, device and system for compensating magnetron anode voltage and output power
By obtaining the current temperature and anode voltage of the magnetron, calculating the correction voltage and temperature change rate, and using PID control to adjust the PWM signal, the attenuation problem of the magnetron output power under temperature fluctuations is solved, and efficient coordinated control of the anode voltage and output power is achieved, thereby improving the stability and accuracy of the equipment.
Patent Information
- Application Number
- CN202510943409.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-09
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2045-07-09
AI Technical Summary
The output power of existing magnetrons cannot be effectively compensated for ambient temperature fluctuations, resulting in a linear attenuation of the anode voltage and output power as the temperature rises, affecting the stability of equipment performance. Existing solutions are complex and costly.
By obtaining the current temperature and anode voltage of the magnetron, calculating the correction voltage and temperature change rate, and using PID control to adjust the PWM signal, coordinated control of the anode voltage and output power is achieved. This includes the coordination of temperature acquisition, voltage acquisition, and water cooling modules to ensure that the magnetron is within a safe operating range.
The control efficiency and accuracy of the magnetron are improved, the stability of the output power is ensured, the control strategy is simplified, and the system complexity and cost are reduced.
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Figure CN120432368B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of radiators for microwave heating, and in particular to a method, a device and a system for compensating anode voltage and output power of a magnetron. Background Art
[0002] Existing magnetron output power cannot compensate for thermal losses under fluctuating ambient temperatures. For example, the anode voltage (ebm) and output power (Po) decay linearly with increasing temperature, causing device performance drift. The temperature compensation solutions used by a very small number of equipment manufacturers rely heavily on complex heat sink designs or PID temperature control circuits, increasing system complexity and cost. Most equipment manufacturers lack a coordinated control mechanism for anode voltage and output power, making it difficult to achieve precise power stability control. Summary of the Invention
[0003] The purpose of the embodiments of the present invention is to provide a method, device and system for compensating the anode voltage and output power of a magnetron, which can achieve coordinated control of the anode voltage and output power, thereby improving the working efficiency of the magnetron.
[0004] To achieve the above objectives, an embodiment of the present invention provides a method for compensating anode voltage and output power of a magnetron, comprising:
[0005] Get the current temperature and anode voltage measurement of the magnetron;
[0006] Calculating a correction voltage based on the current temperature;
[0007] determining a temperature change rate based on the correction voltage and / or the anode voltage measurement;
[0008] performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value;
[0009] Determine whether the current temperature is within the safe operating range;
[0010] When the current temperature is outside the safe operating range, obtaining a current anode voltage value;
[0011] Calculate the theoretical output power based on the anode voltage value;
[0012] Calculating the power difference between the theoretical output power and the actual output power;
[0013] Determining whether the power difference is greater than or equal to a difference threshold;
[0014] If it is determined that the difference is greater than or equal to the difference threshold, the target voltage value is calculated according to the theoretical output power and input power, and the process returns to the step of obtaining the current temperature and anode voltage measurement value of the magnetron.
[0015] Optionally, calculating the correction voltage according to the current temperature includes:
[0016] Calculating the temperature difference between the current temperature and the operating temperature;
[0017] Calculating the product of the temperature difference and a correction coefficient;
[0018] Calculate the difference between the unit value and the product to obtain the compensation factor;
[0019] The product of the compensation coefficient and the nominal anode voltage is calculated to obtain the correction voltage.
[0020] Optionally, determining the temperature change rate according to the correction voltage and / or the anode voltage measurement value includes:
[0021] Determining the magnitude relationship between the correction voltage and the target voltage value and the anode voltage measurement value of the previous control round;
[0022] If it is determined that the correction voltage is greater than the target voltage value of the previous control round and greater than the anode voltage measurement value, the calculated temperature change rate is increased by a preset single-step adjustment value;
[0023] When it is determined that the correction voltage is less than the target voltage value of the previous control round and less than the anode voltage measurement value, the calculated temperature change rate is reduced by a preset single-step adjustment value.
[0024] Optionally, performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value includes:
[0025] Determine whether the current temperature is less than or equal to a first temperature value;
[0026] When it is determined that the current temperature is less than or equal to the first temperature value, the water cooling power is controlled using formula (1):
[0027] , (1)
[0028] in, is the water cooling flow rate, is the minimum value of water cooling flow rate, is the proportional coefficient of PID control, is the current temperature.
[0029] Optionally, performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value includes:
[0030] If it is determined that the current temperature is greater than the first temperature value, determining whether the current temperature is less than or equal to a second temperature value;
[0031] In the case where it is determined that the current temperature is less than or equal to the second temperature value, determining whether the temperature change rate is less than the first temperature change value;
[0032] If it is determined that the temperature change rate is less than the first temperature change value, the proportional coefficient is set to the corresponding minimum value, the integral time is set to the corresponding maximum value, and the differential time is set to the corresponding minimum value;
[0033] If it is determined that the temperature change rate is greater than or equal to the first temperature change value, determining whether the temperature change rate is less than or equal to a second temperature change value;
[0034] If it is determined that the temperature change rate is less than or equal to the second temperature change value, the proportional coefficient is set to the corresponding intermediate value, the integral time is set to the corresponding intermediate value, and the differential time is set to the corresponding intermediate value;
[0035] When it is determined that the temperature change rate is greater than the second temperature change value, the proportional coefficient is set to the corresponding maximum value, the integral time is set to the corresponding minimum value, and the differential time is set to the corresponding maximum value.
[0036] Optionally, performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value includes:
[0037] If it is determined that the current temperature is greater than the second temperature value, setting the water cooling flow rate to a maximum value and issuing an alarm;
[0038] In the event of an alarm, determining whether the current temperature continues to rise within a preset time period;
[0039] If it is determined that the current temperature continues to rise within a preset time period, the power supply of the magnetron is disconnected.
[0040] Optionally, calculating the theoretical output power according to the anode voltage value includes:
[0041] The theoretical output power is calculated according to formula (2):
[0042] , (2)
[0043] in, is the theoretical output power, is the anode voltage value.
[0044] Optionally, calculating the target voltage value according to the theoretical output power and input power includes:
[0045] The target voltage value is calculated according to formula (3):
[0046] , (3)
[0047] in, is the target voltage value, is the input power, is the theoretical output power, is the efficiency value.
[0048] On the other hand, the present invention further provides a device for compensating anode voltage and output power of a magnetron, the device comprising a processor, and the processor is configured to execute any of the above methods.
[0049] In another aspect, the present invention further provides a system for compensating anode voltage and output power of a magnetron, the system comprising:
[0050] Temperature acquisition module, used to collect the current temperature of the magnetron;
[0051] A voltage acquisition module is used to collect the anode voltage measurement value of the magnetron;
[0052] Water cooling module, used to dissipate heat for the magnetron;
[0053] The controller is connected to the temperature acquisition module, the voltage acquisition module and the water cooling module, and is used to execute any of the above methods.
[0054] On the other hand, the present invention also provides a microwave generating device, comprising a magnetron, the microwave generating device further comprising the system for compensating the anode voltage and output power of the magnetron according to the above description, and the controller is electrically connected to the magnetron.
[0055] Optionally, the microwave generating device further comprises a microwave power supply for providing electrical energy, and the microwave power supply is electrically connected to the magnetron.
[0056] Through the above technical solution, the embodiments of the present invention provide a method, device and system for compensating the anode voltage and output power of a magnetron. This method, device and system perform PWM control on the magnetron by simultaneously combining the anode voltage and temperature, thereby overcoming the technical defect of the single output power control strategy in the prior art that does not take into account the characteristic of linear temperature attenuation, thereby improving the control efficiency and accuracy of the magnetron.
[0057] Other features and advantages of the embodiments of the present invention will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0058] The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the following detailed description, they are used to explain the embodiments of the present invention, but do not constitute a limitation of the embodiments of the present invention. In the accompanying drawings:
[0059] Figure 1 is a flow chart of a method for compensating anode voltage and output power of a magnetron according to one embodiment of the present invention;
[0060] Figure 2 Schematic diagram of a PT100 temperature sensor, an optocoupler isolation module, and a voltage divider circuit according to one embodiment of the present invention;
[0061] Figure 3 is a flow chart of a method for calculating a correction voltage according to one embodiment of the present invention;
[0062] Figure 4 is a flow chart of a method for calculating a temperature change rate according to one embodiment of the present invention;
[0063] Figure 5 is a flow chart of an improved PID control method according to one embodiment of the present invention;
[0064] Figure 6 4 is a structural block diagram of a system for compensating anode voltage and output power of a magnetron according to an embodiment of the present invention. DETAILED DESCRIPTION
[0065] The following describes the specific implementation of the embodiment of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the embodiment of the present invention and is not used to limit the embodiment of the present invention.
[0066] It should be noted that the acquisition, transmission, storage, use, and processing of data in the technical solution of this application are in compliance with the relevant provisions of laws and regulations. In the embodiments of this application, certain software, components, models, and other existing solutions in the industry may be mentioned. These should be considered as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of this application, but it does not mean that the applicant has or will necessarily use such solutions.
[0067] like Figure 1 FIG. 1 is a flow chart of a method for compensating anode voltage and output power of a magnetron according to an embodiment of the present invention. Figure 1 In the method, the method may include the following steps:
[0068] In step S10, the current temperature and anode voltage measurement values of the magnetron are obtained;
[0069] In step S11, a correction voltage is calculated according to the current temperature;
[0070] In step S12, the temperature change rate is determined based on the correction voltage and / or the anode voltage measurement value;
[0071] In step S13, PID control is performed on the PWM signal of the magnetron according to the temperature change rate and the target voltage value;
[0072] In step S14, it is determined whether the current temperature is within the safe operating range;
[0073] In step S15, when the current temperature is outside the safe operating range, the current anode voltage value is obtained;
[0074] In step S16, the theoretical output power is calculated according to the anode voltage value;
[0075] In step S17, the power difference between the theoretical output power and the actual output power is calculated;
[0076] In step S18, it is determined whether the power difference is greater than or equal to a difference threshold;
[0077] In step S19, when it is judged that the difference is greater than or equal to the difference threshold, the target voltage value is calculated according to the theoretical output power and input power, and the process returns to the step of obtaining the current temperature and anode voltage measurement value of the magnetron, that is, returns to step S10.
[0078] In this Figure 1In the method shown, step S10 can be used to obtain the current temperature and anode voltage measurement value of the magnetron. The specific method for obtaining the current temperature of the magnetron can be various forms known to those skilled in the art, including but not limited to thermocouple sensors, thermistor sensors, thermistors, semiconductor temperature sensors, infrared sensors, thermal imagers, etc. In one example of the present invention, considering the hardware requirements of the magnetron device itself, step S10 can be to use a PT100 temperature sensor to collect temperature. Furthermore, in order to further improve the accuracy of temperature collection, the PT100 temperature sensor can also be connected to an isolation module, such as an optocoupler isolation module. More specifically, the optocoupler isolation module can be a TE6650 isolation sampling module. The temperature analog quantity (current signal) collected by the PT100 temperature sensor is converted into an electrical signal through optocoupler isolation, and then transmitted to the ADC acquisition detection end of the MCU after passing through a voltage divider circuit. The voltage collected by the ADC acquisition detection end can be calculated by a formula preset in the MCU. The preset formula of the MCU can be, for example, the following formula (4):
[0079] , (4)
[0080] in, is the voltage collected by the ADC acquisition terminal, represents the channel function, A floating point number.
[0081] Then, the corresponding resistance value is obtained by converting it using the following formula (5):
[0082] , (5)
[0083] in, The resistance value is converted. Finally, it is converted into a specific temperature value through the PT100 resistance table. The schematic diagram of the PT100 temperature sensor, optocoupler isolation module and voltage divider circuit is shown in the figure below. Figure 2 The PT100 temperature sensor, optocoupler isolation module, and voltage divider circuit configuration achieve good measurement linearity and high measurement accuracy. This configuration also features a simple circuit, strong anti-interference capability, and low cost, achieving the goal of high-voltage-resistant, isolated temperature data acquisition.
[0084] Step S11 can be used to calculate the correction voltage according to the current temperature. Specifically, in one example of the present invention, step S11 can be used as follows Figure 3 The method shown in the figure calculates the correction voltage. Figure 3 In the method for calculating the correction voltage, the method may include the following steps:
[0085] In step S20, the temperature difference between the current temperature and the operating temperature is calculated. The operating temperature may be the nominal operating temperature of the magnetron. The operating temperature may vary for different models of magnetrons. In one embodiment of the present invention, the operating temperature may be 25°C. The current temperature may be the collected temperature.
[0086] In step S21, the product of the temperature difference and the correction coefficient is calculated. In one example of the present invention, the correction coefficient may be 0.0008.
[0087] In step S22, the difference between the unit value and the product is calculated to obtain a compensation coefficient, wherein the unit value may be 1.
[0088] In step S23 , the product of the compensation coefficient and the nominal anode voltage is calculated to obtain a correction voltage.
[0089] Step S12 can be used to determine the temperature change rate based on the correction voltage and / or the anode voltage measurement value. The temperature change rate can be used to represent the current temperature change trend of the magnetron. The specific calculation method of the temperature change rate can be various forms known to those skilled in the art, such as the differential method known to those skilled in the art. Considering that the voltage of the magnetron is related to the temperature change rate, if the commonly used differential method is used, it will obviously cause the calculated temperature change trend to be delayed. Therefore, in one example of the present invention, it can be used as follows: Figure 4 The temperature change rate is calculated by the method shown in Figure 4 The method for calculating the temperature change rate may include the following steps:
[0090] In step S30, the relationship between the correction voltage and the target voltage value and the anode voltage measurement value of the previous control round is determined. The target voltage value may be the target voltage value of the most recent correction voltage, and the anode voltage value may be the anode voltage measurement value obtained by real-time measurement.
[0091] In step S31, if the correction voltage is determined to be greater than the target voltage value of the previous control cycle and greater than the measured anode voltage, the calculated temperature change rate is increased by a preset single-step adjustment value. In step S31, the calculated temperature change rate is obtained by a differential method, and the output temperature change rate is the sum of the temperature change rate obtained by the differential method and the preset single-step adjustment value.
[0092] In step S32, if the correction voltage is determined to be less than the target voltage value from the previous control cycle and less than the measured anode voltage, the calculated temperature change rate is reduced by a preset single-step adjustment value. In step S32, the calculated temperature change rate is obtained by differentiation, and the output temperature change rate is the difference between the temperature change rate obtained by differentiation and the preset single-step adjustment value. For other cases in steps S31 and S32, the temperature change rate obtained by differentiation can be directly used as the final output value.
[0093] Step S13 performs PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value. In this embodiment, the specific method of the PID control can be various forms known to those skilled in the art. However, considering the temperature change rate of the magnetron of the present invention, in one example of the present invention, the current temperature of the magnetron can be used as the selected control channel. Specifically, the PID control method may include the following: Figure 5 The following steps are shown in:
[0094] In step S40, it is determined whether the current temperature is less than or equal to a first temperature value. The specific value of the first temperature value may be a plurality of values known to those skilled in the art. In one example of the present invention, the first temperature value may be 27°C.
[0095] In step S41, when it is determined that the current temperature is less than or equal to the first temperature value, the water cooling power is controlled using formula (1):
[0096] , (1)
[0097] in, is the water cooling flow rate, is the minimum water cooling flow rate (10L / min), is the proportional coefficient of PID control, is the current temperature.
[0098] In step S42, if the current temperature is determined to be greater than the first temperature value, it is determined whether the current temperature is less than or equal to a second temperature value. The second temperature value is greater than the first temperature value. The specific value of the second temperature value may be a plurality of values known to those skilled in the art. In one example of the present invention, the second temperature value may be 50°C.
[0099] In step S43, if the current temperature is less than or equal to the second temperature value, it means that the current temperature range is within the PID control temperature range. Therefore, the following formula (6) can be used to control the water flow rate of the water cooling module:
[0100] , (6)
[0101] in, is the integration coefficient, is the differential coefficient. The values of the proportional coefficient, integral coefficient, and differential coefficient can be selected in various forms known to those skilled in the art. However, considering the impact of the present invention on the magnetron temperature and temperature variation range, in one example of the present invention, based on the original step S43, it is further possible to determine whether the temperature change rate is less than the first temperature variation value. The specific value of the first temperature variation value can be multiple values known to those skilled in the art. In one example of the present invention, the first temperature variation value can be 5°C / min.
[0102] In step S44 , when it is determined that the temperature change rate is less than the first temperature change value, the proportional coefficient is set to the corresponding minimum value, the integral time is set to the corresponding maximum value, and the differential time is set to the corresponding minimum value.
[0103] In step S45, if the temperature change rate is determined to be greater than or equal to the first temperature change value, a determination is made as to whether the temperature change rate is less than or equal to a second temperature change value. The second temperature change value may be greater than the first temperature change value. The specific value of the second temperature change value may be a variety of values known to those skilled in the art. In one example of the present invention, the second temperature change value may be 10°C / min.
[0104] In step S46, when it is determined that the temperature change rate is less than or equal to the second temperature change value, the proportional coefficient is set to the corresponding intermediate value, the integral time is set to the corresponding intermediate value, and the differential time is set to the corresponding intermediate value.
[0105] In step S47, when it is determined that the temperature change rate is greater than the second temperature change value, the proportional coefficient is set to the corresponding maximum value, the integral time is set to the corresponding minimum value, and the differential time is set to the corresponding maximum value.
[0106] In step S48 , when it is determined that the current temperature is greater than the second temperature value, the water cooling flow rate is set to a maximum value (eg, 25 L / min) and an alarm is issued.
[0107] In step S49, when the alarm is issued, it is determined whether the current temperature continues to rise within a preset time period.
[0108] In step S50 , if it is determined that the current temperature continues to rise within the preset time period, the power supply of the magnetron is turned off.
[0109] Step S14 can be used to determine whether the current temperature is within the safe operating range. If it is within the safe operating range, the PID control in steps S11 to S13 can be directly adopted. On the contrary, if it is determined that the current temperature is outside the safe operating range, it means that the output power of the current magnetron is likely to have a large expected deviation due to the influence of temperature. Therefore, it is necessary to update the target voltage value through steps S15 to S19. Specifically, in this embodiment, step S15 can be used to obtain the current anode voltage value. Step S16 can be used to calculate the theoretical output power based on the anode voltage value. Specifically, in one example of the present invention, step S16 can be to use the following formula (2) to calculate the theoretical output power:
[0110] , (2)
[0111] in, is the theoretical output power, is the anode voltage value.
[0112] After the theoretical output power is determined, in order to further determine the influence of the current temperature, step S17 may be further performed, ie, calculating the power difference between the theoretical output power and the actual output power.
[0113] Step S18 can be used to determine whether the power difference is greater than or equal to a preset difference threshold. If the power difference is less than the difference threshold, it means that the original PID control parameters can still ensure stable operation of the magnetron, so the process can directly return to step S10.
[0114] On the other hand, if it is determined that the power difference is greater than or equal to the difference threshold, this indicates that the PID control parameters are no longer able to ensure stable operation of the magnetron. Therefore, it is necessary to execute step S19, that is, to calculate the target voltage value based on the theoretical output power and input power to adjust the PID control parameters. The specific calculation method for the target voltage value can be various forms known to those skilled in the art. In one example of the present invention, the target voltage value can be calculated using the following formula (3):
[0115] , (3)
[0116] in, is the target voltage value, is the input power, is the theoretical output power, is the efficiency value.
[0117] On the other hand, the present invention further provides a device for compensating anode voltage and output power of a magnetron, the device comprising a processor, and the processor is configured to execute any of the above methods.
[0118] In another aspect, the present invention also provides a system for compensating anode voltage and output power of a magnetron, such as Figure 6 As shown, the system may include a temperature acquisition module 1, a voltage acquisition module 2, a water cooling module 3, and a controller 4. The temperature acquisition module 1 may be used to acquire the current temperature of the magnetron. The voltage acquisition module 2 may be used to acquire the anode voltage measurement value and the anode voltage value of the magnetron. The water cooling module 3 may be used to dissipate heat from the magnetron. The controller 4 may be connected to the temperature acquisition module 1, the voltage acquisition module 2, and the water cooling module 3 to execute any of the methods described above.
[0119] On the other hand, the present invention also provides a microwave generating device, comprising a magnetron, the microwave generating device further comprising the system for compensating the anode voltage and output power of the magnetron according to the above description, and the controller is electrically connected to the magnetron.
[0120] Optionally, the microwave generating device further comprises a microwave power supply for providing electrical energy, and the microwave power supply is electrically connected to the magnetron.
[0121] In one embodiment of the present invention, the microwave generator (1.25kW model) can be used as the microwave generating component of a plasma cleaner. This plasma cleaner can be used to treat material surfaces, remove contaminants, and enhance reactivity. It is suitable for applications in semiconductor electronics, medical, optical, and automotive industries, offering advantages such as high efficiency, environmental friendliness, and selectivity.
[0122] In different fields, the role of the plasma cleaning machine (1.25kW microwave generator) can also be different, specifically:
[0123] (1) Semiconductors: used for surface cleaning, removing oxide layers, and enhancing adhesion;
[0124] (2) Microelectronics: used for surface treatment before integrated circuit packaging;
[0125] (3) Biomedicine: used for disinfection of medical devices, biocompatibility modification, etc.;
[0126] (4) Optics: used for surface treatment of optical components such as lenses and displays;
[0127] (5) Automobile manufacturing: used for pretreatment before car body coating to improve coating quality.
[0128] In another example of the present invention, the microwave generator (3kW type) can be used as a microwave plasma torch, PECVD photovoltaic panel coating, and UV curing. Specifically:
[0129] (1) Environmental governance: It can process various types of solid waste (municipal domestic waste, industrial hazardous solid waste, medical and electronic hazardous waste, sewage sludge, smelting waste residue and mining tailings, etc.);
[0130] (2) Photovoltaic panel coating: Generate microwave energy to excite process gas to form highly active plasma, promote chemical hardening, and deposit high-quality thin films on the surface of the panels at a lower temperature, thereby improving the uniformity, density, and adhesion of the thin films, thereby improving the conversion efficiency and stability of photovoltaic cells and ensuring the photoelectric performance of the panels;
[0131] (3) Surface treatment of plastic parts such as car lights, mobile phones, and TV cases, as well as curing of materials such as coatings, inks, and adhesives. Ultraviolet radiation is used to trigger a chemical reaction, converting the material from low-molecular-weight to high-molecular-weight, thereby achieving the purpose of curing. It has the characteristics of fast curing speed, high efficiency, and environmental protection.
[0132] Through the above technical solution, the embodiments of the present invention provide a method, device and system for compensating the anode voltage and output power of a magnetron. This method, device and system perform PWM control on the magnetron by simultaneously combining the anode voltage and temperature, thereby overcoming the technical defect of the single output power control strategy in the prior art that does not take into account the characteristic of linear temperature attenuation, thereby improving the control efficiency and accuracy of the magnetron.
[0133] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
[0134] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0135] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.
[0136] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.
[0137] In a typical configuration, a computing device includes one or more processors (CPUs), input / output interfaces, network interfaces, and memory.
[0138] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.
[0139] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can be implemented using any method or technology for information storage. Information can be computer-readable instructions, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase-change RAM (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices, or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer-readable media does not include transitory computer-readable media, such as modulated data signals and carrier waves.
[0140] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.
[0141] The above are merely embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.
Claims
1. A method for compensating anode voltage and output power of a magnetron, characterized in that: include: Get the current temperature and anode voltage measurement of the magnetron; Calculating a correction voltage based on the current temperature; determining a temperature change rate based on the correction voltage and / or the anode voltage measurement; performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value; Determine whether the current temperature is within the safe operating range; When the current temperature is outside the safe operating range, obtaining a current anode voltage value; Calculate the theoretical output power based on the anode voltage value; Calculating the power difference between the theoretical output power and the actual output power; Determining whether the power difference is greater than or equal to a difference threshold; If it is determined that the difference is greater than or equal to the difference threshold, the target voltage value is calculated according to the theoretical output power and input power, and the process returns to the step of obtaining the current temperature and anode voltage measurement value of the magnetron.
2. The method according to claim 1, characterized in that Calculating a correction voltage according to the current temperature includes: Calculating the temperature difference between the current temperature and the operating temperature; Calculating the product of the temperature difference and a correction coefficient; Calculate the difference between the unit value and the product to obtain the compensation factor; The product of the compensation coefficient and the nominal anode voltage is calculated to obtain the correction voltage.
3. The method according to claim 1, characterized in that Determining the temperature change rate based on the correction voltage and / or the anode voltage measurement value includes: Determining the magnitude relationship between the correction voltage and the target voltage value and the anode voltage measurement value of the previous control round; If it is determined that the correction voltage is greater than the target voltage value of the previous control round and greater than the anode voltage measurement value, the calculated temperature change rate is increased by a preset single-step adjustment value; When it is determined that the correction voltage is less than the target voltage value of the previous control round and less than the anode voltage measurement value, the calculated temperature change rate is reduced by a preset single-step adjustment value.
4. The method according to claim 3, characterized in that The method further comprises: performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value, comprising: Determine whether the current temperature is less than or equal to a first temperature value; When it is determined that the current temperature is less than or equal to the first temperature value, the water cooling flow rate is controlled using formula (1): ,(1) in, is the water cooling flow rate, is the minimum value of water cooling flow rate, is the proportional coefficient of PID control, is the current temperature.
5. The method according to claim 4, characterized in that The method further comprises: performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value, comprising: If it is determined that the current temperature is greater than the first temperature value, determining whether the current temperature is less than or equal to a second temperature value; In the case where it is determined that the current temperature is less than or equal to the second temperature value, determining whether the temperature change rate is less than the first temperature change value; If it is determined that the temperature change rate is less than the first temperature change value, the proportional coefficient is set to the corresponding minimum value, the integral time is set to the corresponding maximum value, and the differential time is set to the corresponding minimum value; If it is determined that the temperature change rate is greater than or equal to the first temperature change value, determining whether the temperature change rate is less than or equal to a second temperature change value; If it is determined that the temperature change rate is less than or equal to the second temperature change value, the proportional coefficient is set to the corresponding intermediate value, the integral time is set to the corresponding intermediate value, and the differential time is set to the corresponding intermediate value; When it is determined that the temperature change rate is greater than the second temperature change value, the proportional coefficient is set to the corresponding maximum value, the integral time is set to the corresponding minimum value, and the differential time is set to the corresponding maximum value.
6. The method according to claim 5, characterized in that The method further comprises: performing PID control on the PWM signal of the magnetron according to the temperature change rate and the target voltage value, comprising: If it is determined that the current temperature is greater than the second temperature value, setting the water cooling flow rate to a maximum value and issuing an alarm; In the event of an alarm, determining whether the current temperature continues to rise within a preset time period; If it is determined that the current temperature continues to rise within a preset time period, the power supply of the magnetron is disconnected.
7. The method according to claim 1, characterized in that Calculate the theoretical output power based on the anode voltage value, including: The theoretical output power is calculated according to formula (2): ,(2) in, is the theoretical output power, is the anode voltage value.
8. The method according to claim 1, characterized in that Calculating the target voltage value according to the theoretical output power and input power includes: The target voltage value is calculated according to formula (3): ,(3) in, is the target voltage value, is the input power, is the theoretical output power, is the efficiency value.
9. A device for compensating anode voltage and output power of a magnetron, characterized in that: The device comprises a processor, and the processor is configured to execute the method according to any one of claims 1 to 8.
10. A system for compensating anode voltage and output power of a magnetron, characterized in that: The system comprises: Temperature acquisition module, used to collect the current temperature of the magnetron; A voltage acquisition module is used to collect the anode voltage measurement value of the magnetron; Water cooling module, used to dissipate heat for the magnetron; A controller is connected to the temperature acquisition module, the voltage acquisition module and the water cooling module, and is used to execute the method according to any one of claims 1 to 8.
11. A microwave generating device comprising a magnetron, characterized in that: The microwave generating device further comprises the system for compensating anode voltage and output power of a magnetron according to claim 10 , and a controller is electrically connected to the magnetron.
12. The microwave generating device according to claim 11, characterized in that: The microwave generating device further includes a microwave power supply for providing electrical energy, wherein the microwave power supply is electrically connected to the magnetron.
Citation Information
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