Preparation method of display panel, display panel and display device

Abstract

The invention discloses a preparation method of a display panel, the display panel and a display device.The preparation method comprises the steps that an isolation material layer is formed on one side of a substrate, and the isolation material layer comprises a first opening area and a second opening area; patterning the isolation material layer, forming a first isolation opening in the first opening region, and reserving the isolation material layer in the second opening region; forming a first light-emitting functional layer and a first electrode of the first light-emitting unit in the first isolation opening; performing decontamination treatment on the isolation material layer in the second opening area; patterning the isolation material layer, and forming a second isolation opening in the second opening region; and forming a second light-emitting functional layer and a first electrode of the second light-emitting unit in the second isolation opening.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a method for manufacturing a display panel, a display panel, and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) display technology is considered the most promising new display technology for the next generation. Compared with liquid crystal display technology, OLED display technology has advantages such as low energy consumption, low cost, self-luminescence, wide viewing angle, and fast response speed.

[0003] In the traditional OLED display panel manufacturing process, the patterning of luminous pixels is usually achieved through a fine metal mask (FMM). FMM technology is mature and has rich experience in mass production. However, FMM technology also has problems such as limited precision and high cost. The fine metal mask-free technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance, and has the advantages of high performance, full-area size, and agile delivery. Patents CN118251982A, 202410864269.8, PCT / CN2024 / 098407, PCT / CN2024 / 102783, PCT / CN2024 / 098217, PCT / CN2024 / 099419, PCT / CN2024 / 099072, etc. record the relevant content of the fine metal mask-free technology for reference.

[0004] However, the performance of current OLED display products needs to be improved. Summary of the Invention

[0005] The purpose of this application is to provide a method for manufacturing a display panel, a display panel, and a display device, which can improve the performance of the display panel.

[0006] A first aspect of the present application provides a method for manufacturing a display panel, comprising:

[0007] forming an isolation material layer on one side of the substrate, the isolation material layer comprising a first opening region and a second opening region;

[0008] performing patterning on the isolation material layer to form a first isolation opening in the first opening region and retaining the isolation material layer in the second opening region;

[0009] forming a first light-emitting functional layer and a first electrode of a first light-emitting unit in the first isolation opening;

[0010] performing a decontamination process on the isolation material layer in the second opening area;

[0011] performing patterning on the isolation material layer to form a second isolation opening in the second opening region;

[0012] A second light-emitting functional layer and a first electrode of the second light-emitting unit are formed in the second isolation opening.

[0013] In some embodiments, before the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes:

[0014] forming a first etching stopper layer on a side of the first electrode of the first light emitting unit facing away from the substrate;

[0015] After the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes:

[0016] removing the first etch stop layer;

[0017] Preferably, the isolation material layer further includes a third opening region, and in the step of forming a first etch stop layer on a side of the first electrode of the first light-emitting unit facing away from the substrate, the first etch stop layer also covers the isolation material layer in the third opening region;

[0018] Preferably, the material of the first etch stop layer includes photoresist;

[0019] Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate;

[0020] The step of performing a decontamination treatment on the isolation material layer in the second opening area includes:

[0021] removing at least part of the redundant components in the second opening area;

[0022] Preferably, in the step of performing a decontamination treatment on the isolation material layer in the second opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the second opening area;

[0023] Preferably, in the step of forming a first etch stop layer on a side of the first electrode of the first light emitting unit facing away from the substrate, the first etch stop layer covers a portion of the redundant device.

[0024] In some embodiments, the isolation material layer further includes a third opening region, and after the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, the method further includes:

[0025] performing patterning on the isolation material layer to form a third isolation opening in the third opening region;

[0026] forming a third light-emitting functional layer and a first electrode of a third light-emitting unit in the third isolation opening;

[0027] Preferably, before the step of patterning the isolation material layer and forming the third isolation opening in the third opening region, the method further comprises:

[0028] performing a decontamination process on the isolation material layer in the third opening area;

[0029] Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening and / or in the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate;

[0030] The step of performing a decontamination treatment on the isolation material layer in the third opening area includes:

[0031] removing at least part of the redundant components in the third opening area;

[0032] Preferably, in the step of performing a decontamination treatment on the isolation material layer in the third opening area, a plasma bombardment process is used to perform the decontamination treatment on the isolation material layer in the third opening area.

[0033] In some embodiments, before the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes:

[0034] forming a second etching stop layer on a side of the first electrode of the first light-emitting unit and / or the second light-emitting unit facing away from the substrate;

[0035] After the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes:

[0036] removing the second etch stop layer;

[0037] Preferably, the second etch stop layer comprises photoresist;

[0038] Preferably, in the step of forming a second etch stop layer on a side of the first electrode of the first light emitting unit and / or the second light emitting unit facing away from the substrate, the second etch stop layer covers a portion of the redundant device.

[0039] In some embodiments, in the step of forming the third light-emitting functional layer and the first electrode of the third light-emitting unit in the third isolation opening, an encapsulation portion for encapsulating the third light-emitting unit is formed on a side of the first electrode of the third light-emitting unit facing away from the substrate;

[0040] Preferably, the step of forming the third light-emitting functional layer and the first electrode of the third light-emitting unit in the third isolation opening includes:

[0041] forming a third light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0042] Performing patterning on the third light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a third light-emitting functional layer of the third light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit;

[0043] Preferably, after the step of patterning the third light-emitting material layer, the first electrode material layer and the first encapsulation material layer, the method further comprises:

[0044] forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate;

[0045] Preferably, after the step of forming a second encapsulation layer on the side of the encapsulation portion facing away from the substrate, the method further includes:

[0046] A third encapsulation layer is formed on a side of the second encapsulation layer facing away from the substrate.

[0047] In some embodiments, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, an encapsulation portion for encapsulating the first light-emitting unit is formed on a side of the first electrode of the first light-emitting unit facing away from the substrate;

[0048] Preferably, the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening includes:

[0049] forming a first light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0050] Performing patterning on the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a first light-emitting functional layer of the first light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit;

[0051] Preferably, in the step of patterning the first light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer;

[0052] Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium;

[0053] Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the first light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device.

[0054] In some embodiments, in the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, an encapsulation portion for encapsulating the second light-emitting unit is formed on a side of the first electrode of the second light-emitting unit facing away from the substrate;

[0055] Preferably, the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening includes:

[0056] forming a second light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0057] Performing patterning on the second light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a second light-emitting functional layer of the second light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit;

[0058] Preferably, in the step of patterning the second light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer;

[0059] Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium;

[0060] Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the second light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device.

[0061] In some embodiments, the step of patterning the isolation material layer to form a first isolation opening in the first opening region includes:

[0062] performing patterning on the isolation material layer to form a first preliminary opening in the first opening region;

[0063] performing side etching on the isolation material layer exposed through the first preliminary opening to form a first isolation opening, wherein a portion of the first isolation opening close to the substrate is protruding relative to a portion of the first isolation opening away from the substrate in a direction parallel to the substrate;

[0064] Preferably, the step of patterning the isolation material layer to form the second isolation opening in the second opening region includes:

[0065] performing patterning on the isolation material layer to form a second preliminary opening in the second opening region;

[0066] performing side etching on the isolation material layer exposed through the second preliminary opening to form a second isolation opening, wherein a portion of the second isolation opening close to the substrate is protruding relative to a portion of the second isolation opening away from the substrate in a direction parallel to the substrate;

[0067] Preferably, the step of forming an isolation material layer on one side of the substrate includes:

[0068] forming a first sub-isolating material layer and a second sub-isolating material layer in sequence on one side of the substrate;

[0069] In the step of performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, the first sub-isolation material layer exposed through the first preliminary opening is subjected to side etching to form the first isolation opening;

[0070] Preferably, in the step of performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, the first sub-isolation material layer exposed through the second preliminary opening is performed side etching to form the second isolation opening;

[0071] Preferably, the material of the first sub-isolating material layer includes aluminum;

[0072] Preferably, the second sub-isolating material layer is made of titanium.

[0073] In some embodiments, before the step of forming an isolation material layer on one side of the substrate, the method further includes:

[0074] forming a pixel definition material layer on one side of the substrate;

[0075] After patterning the isolation material layer to form a first isolation opening in the first opening region, the method further includes:

[0076] forming a first pixel opening, wherein the first pixel opening is connected to the first isolation opening;

[0077] Preferably, after patterning the isolation material layer and forming the second isolation opening in the second opening region, the method further comprises:

[0078] A second pixel opening is formed, and the second pixel opening is communicated with the second isolation opening.

[0079] A second aspect of the present application provides a method for manufacturing a display panel, comprising:

[0080] forming an isolation material layer on one side of the substrate, the isolation material layer comprising a first opening region and a second opening region;

[0081] performing patterning on the isolation material layer to form a first isolation opening in the first opening region and retaining the isolation material layer in the second opening region;

[0082] forming a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit in the first isolation opening;

[0083] forming a first etching stop layer on a side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate;

[0084] performing a decontamination process on the isolation material layer in the second opening area;

[0085] performing patterning on the isolation material layer to form a second isolation opening in the second opening region;

[0086] A second light-emitting functional layer of the second light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit are formed in the second isolation opening.

[0087] In some embodiments, after the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes:

[0088] removing the first etch stop layer;

[0089] Preferably, the material of the first etch stop layer includes photoresist;

[0090] Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate;

[0091] The step of performing a decontamination treatment on the isolation material layer in the second opening area includes:

[0092] removing at least part of the redundant components in the second opening area;

[0093] Preferably, in the step of performing a decontamination treatment on the isolation material layer in the second opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the second opening area;

[0094] Preferably, in the step of forming a first etch stop layer on a side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate, the first etch stop layer covers a portion of the redundant device;

[0095] Preferably, the isolation material layer further includes a third opening region, and in the step of forming a first etch stop layer on a side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate, the first etch stop layer also covers the isolation material layer in the third opening region;

[0096] Preferably, after the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, the method further includes:

[0097] performing patterning on the isolation material layer to form a third isolation opening in the third opening region;

[0098] forming a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit in the third isolation opening;

[0099] Preferably, before the step of patterning the isolation material layer and forming the third isolation opening in the third opening region, the method further comprises:

[0100] performing a decontamination process on the isolation material layer in the third opening area;

[0101] Preferably, before the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further comprises:

[0102] forming a second etch stop layer on a side of the packaging portion corresponding to the first light-emitting unit and / or the second light-emitting unit facing away from the substrate;

[0103] After the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes:

[0104] removing the second etch stop layer;

[0105] Preferably, the second etch stop layer comprises photoresist;

[0106] Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening and / or in the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate;

[0107] The step of performing a decontamination treatment on the isolation material layer in the third opening area includes:

[0108] removing at least part of the redundant components in the third opening area;

[0109] Preferably, in the step of performing a decontamination treatment on the isolation material layer in the third opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the third opening area;

[0110] Preferably, in the step of forming a second etch stop layer on a side of the packaging portion corresponding to the first light emitting unit and / or the second light emitting unit facing away from the substrate, the second etch stop layer covers a portion of the redundant device.

[0111] In some embodiments, the step of forming a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit in the first isolation opening includes:

[0112] forming a first light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0113] Performing patterning on the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a first light-emitting functional layer of the first light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit;

[0114] Preferably, in the step of patterning the first light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer;

[0115] Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium;

[0116] Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode material layer, and the first packaging material layer using an etching process, the isolation material layer, the first light-emitting material layer, and the etching gas undergo a chemical reaction to form at least part of the redundant device;

[0117] Preferably, the step of forming a second light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit in the second isolation opening includes:

[0118] forming a second light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0119] Performing patterning on the second light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a second light-emitting functional layer of the second light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit;

[0120] Preferably, in the step of patterning the second light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer;

[0121] Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode material layer, and the first packaging material layer using an etching process, the isolation material layer, the second light-emitting material layer, and the etching gas undergo a chemical reaction to form at least part of the redundant device;

[0122] Preferably, the step of forming a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit in the third isolation opening includes:

[0123] forming a third light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate;

[0124] Performing patterning on the third light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a third light-emitting functional layer of the third light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit;

[0125] Preferably, after the step of patterning the third light-emitting material layer, the first electrode material layer and the first encapsulation material layer, the method further comprises:

[0126] forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate;

[0127] Preferably, after the step of forming a second encapsulation layer on the side of the encapsulation portion facing away from the substrate, the method further includes:

[0128] forming a third encapsulation layer on a side of the second encapsulation layer facing away from the substrate;

[0129] Preferably, the step of patterning the isolation material layer to form a first isolation opening in the first opening region includes:

[0130] performing patterning on the isolation material layer to form a first preliminary opening in the first opening region;

[0131] performing side etching on the isolation material layer exposed through the first preliminary opening to form a first isolation opening, wherein a portion of the first isolation opening close to the substrate is protruding relative to a portion of the first isolation opening away from the substrate in a direction parallel to the substrate;

[0132] Preferably, the step of patterning the isolation material layer to form the second isolation opening in the second opening region includes:

[0133] performing patterning on the isolation material layer to form a second preliminary opening in the second opening region;

[0134] performing side etching on the isolation material layer exposed through the second preliminary opening to form a second isolation opening, wherein a portion of the second isolation opening close to the substrate is protruding relative to a portion of the second isolation opening away from the substrate in a direction parallel to the substrate;

[0135] Preferably, the step of forming an isolation material layer on one side of the substrate includes:

[0136] forming a first sub-isolating material layer and a second sub-isolating material layer in sequence on one side of the substrate;

[0137] In the step of performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, the first sub-isolation material layer exposed through the first preliminary opening is subjected to side etching to form the first isolation opening;

[0138] Preferably, in the step of performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, the first sub-isolation material layer exposed through the second preliminary opening is performed side etching to form the second isolation opening;

[0139] Preferably, the material of the first sub-isolating material layer includes aluminum;

[0140] Preferably, the material of the second sub-isolating material layer includes titanium;

[0141] Preferably, before the step of forming an isolation material layer on one side of the substrate, the method further comprises:

[0142] forming a pixel definition material layer on one side of the substrate;

[0143] After patterning the isolation material layer to form a first isolation opening in the first opening region, the method further includes:

[0144] forming a first pixel opening, wherein the first pixel opening is connected to the first isolation opening;

[0145] Preferably, after patterning the isolation material layer and forming the second isolation opening in the second opening region, the method further comprises:

[0146] A second pixel opening is formed, and the second pixel opening is communicated with the second isolation opening.

[0147] According to a third aspect of the present application, a display panel is provided, comprising a substrate, an isolation structure, a light-emitting unit and a packaging portion; the isolation structure is arranged on one side of the substrate, and the isolation structure encloses an isolation opening; at least a portion of the light-emitting unit is arranged in the isolation opening; the packaging portion is arranged on a side of the light-emitting unit facing away from the substrate, a portion of the packaging portion is located on a side of the isolation structure facing away from the substrate, and is spaced apart from the isolation structure along the thickness direction of the substrate to form a accommodating space, and redundant devices are provided in at least a portion of the accommodating space.

[0148] In some embodiments, the redundant device is disposed in an entire layer on a side of the isolation structure facing away from the substrate;

[0149] Preferably, the redundant component includes a first sub-section, a second sub-section, and a third sub-section located between the first sub-section and the second sub-section, and the first sub-section and the second sub-section are respectively arranged in the accommodation spaces of two adjacent packaging parts;

[0150] Preferably, the isolation structure includes a first isolation portion and a second isolation portion provided on a side of the first isolation portion facing away from the substrate, and an orthographic projection of the first isolation portion on the substrate is located within an orthographic projection of the second isolation portion on the substrate;

[0151] Preferably, the isolation structure further includes a third isolation portion, which is provided on a side of the first isolation portion facing the substrate, and an orthographic projection of the first isolation portion on the substrate is located within an orthographic projection of the third isolation portion on the substrate;

[0152] Preferably, the light emitting unit includes a first electrode, and the first electrode extends through the third isolation portion to overlap with the first isolation portion.

[0153] In a fifth aspect, the present application provides a display device, comprising a display panel prepared by any of the above preparation methods or the above-mentioned display panel.

[0154] The present application provides a method for preparing a display panel, a display panel, and a display device. In the preparation method, an isolation material layer is first formed on one side of a substrate, the isolation material layer including a first opening region and a second opening region. The isolation material layer is then patterned to form a first isolation opening in the first opening region, the isolation material layer in the second opening region is retained, and a first light-emitting functional layer and a first electrode of a first light-emitting unit are formed in the first isolation opening. After the isolation material layer in the second opening region is decontaminated, the isolation material layer is patterned to form a second isolation opening in the second opening region. This reduces the risk of contaminants such as redundant devices on the isolation material layer in the second opening region affecting the process quality of the second isolation opening, helps improve the quality of film layers such as the second light-emitting functional layer and the first electrode of the second light-emitting unit prepared subsequently, and enhances the performance of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0155] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0156] Figure 1 A flow chart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0157] Figure 2 A schematic cross-sectional view of a method for manufacturing a display panel according to some embodiments of the present application;

[0158] Figure 3 Another flow chart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0159] Figure 4 Another cross-sectional schematic diagram of a method for manufacturing a display panel provided in some embodiments of the present application;

[0160] Figure 5Another flow chart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0161] Figure 6 Another schematic cross-sectional view of a method for manufacturing a display panel according to some embodiments of the present application;

[0162] Figure 7 Another flow chart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0163] Figure 8 Another flow chart of a method for manufacturing a display panel according to some embodiments of the present application;

[0164] Figure 9 Another cross-sectional schematic diagram of a method for manufacturing a display panel provided in some embodiments of the present application;

[0165] Figure 10 Flowcharts of methods for manufacturing display panels provided in other embodiments of the present application;

[0166] Figure 11 A flow chart of a method for manufacturing a display panel provided in some other embodiments of the present application;

[0167] Figure 12 A flow chart of a method for manufacturing a display panel provided in some further embodiments of the present application;

[0168] Figure 13 A flowchart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0169] Figure 14 A schematic cross-sectional view of a method for manufacturing a display panel according to some embodiments of the present application;

[0170] Figure 15 A flow chart of a method for manufacturing a display panel provided in some further embodiments of the present application;

[0171] Figure 16 A schematic cross-sectional view of a method for manufacturing a display panel according to some further embodiments of the present application;

[0172] Figure 17 A flowchart of a method for manufacturing a display panel according to an embodiment of the second aspect of the present application;

[0173] Figure 18 Schematic cross-sectional views of display panels provided in some further embodiments of the present application.

[0174] The accompanying figures are as follows:

[0175] Display panel 100; substrate 10; isolation structure 20; isolation material layer 20'; isolation opening 21; first isolation opening 21a; second isolation opening 21b; third isolation opening 21c; first isolation portion 22; first sub-isolation material layer 22'; second isolation portion 23; second sub-isolation material layer 23';

[0176] Light-emitting unit 30; second electrode 31; light-emitting functional layer 32; first electrode 33;

[0177] First light-emitting unit 30a; first light-emitting functional layer 32a; second light-emitting unit 30b; second light-emitting functional layer 32b; third light-emitting unit 30c; third light-emitting functional layer 32c; encapsulation unit 40; redundant device 50; first subunit 51; second subunit 52; third subunit 53; first etch stop layer 60; second etch stop layer 70; pixel definition layer 80; pixel definition material layer 80'; pixel defining portion 81; pixel opening 82; first pixel opening 82a;

[0178] First opening area A1; second opening area A2; third opening area A3; first preliminary opening K1; second preliminary opening K2. DETAILED DESCRIPTION

[0179] The following detailed description of the embodiments of the present application is provided in conjunction with the accompanying drawings and examples. The following detailed description of the embodiments and the accompanying drawings are used to illustrate the principles of the present application, but are not intended to limit the scope of the present application, that is, the present application is not limited to the described embodiments.

[0180] In the description of this application, it should be noted that, unless otherwise specified, "multiple" means more than two; the terms "upper", "lower", "left", "right", "inside", "outside", etc., indicating directions or positional relationships, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. "Vertical" is not strictly perpendicular, but is within the allowable error range. "Parallel" is not strictly parallel, but is within the allowable error range.

[0181] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0182] The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of this application. In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0183] In some display panels, due to the presence of the isolation structure, the precision mask plate can be eliminated when evaporating the light-emitting structure. When preparing the isolation opening of the isolation structure, the first isolation opening corresponding to the first light-emitting unit can be prepared first. After the first light-emitting unit and other related film layers (such as the encapsulation part for encapsulating the first light-emitting unit) are prepared, the second isolation opening corresponding to the second light-emitting unit is prepared, and the second light-emitting unit is formed in the second isolation opening. At present, in the preparation process of the first light-emitting unit and its related film layers, some film layers are often patterned with the help of etching technology. During the etching process, due to the influence of factors such as the material of the first light-emitting unit and the isolation material layer and the etchant, redundant devices are likely to remain on the isolation material layer, thereby affecting the process quality of the second isolation opening prepared subsequently. For example, residues may be formed in the second isolation opening, thereby affecting the quality of the second light-emitting unit prepared subsequently and affecting the performance of the display panel.

[0184] Therefore, in order to solve at least part of the above problems, the embodiments of the present application provide a method for manufacturing a display panel, a display panel, and a display device.

[0185] Please refer to Figure 1 and Figure 2 In a first aspect, the present application provides a method for manufacturing a display panel 100, comprising:

[0186] S11 , forming an isolation material layer 20 ′ on one side of the substrate 10 , wherein the isolation material layer 20 ′ includes a first opening area A1 and a second opening area A2 .

[0187] Optionally, before forming the isolation material layer 20' on one side of the substrate 10, the second electrodes 31 of each light-emitting unit 30 may be formed on the side of the substrate 10, with the second electrodes 31 spaced apart. Optionally, before forming the isolation material layer 20' on the side of the substrate 10, a pixel definition material layer 80' may be formed on the side of the second electrodes 31 facing away from the substrate 10, with the pixel definition material layer 80' covering the second electrodes 31. Subsequently, an isolation material layer 20' may be formed on the side of the pixel definition material layer 80' facing away from the substrate 10 to insulate the isolation material layer 20' from the second electrodes 31.

[0188] The substrate 10 includes a substrate and a driving circuit layer provided on the substrate. The substrate can be a rigid substrate made of materials such as glass or plastic, or a flexible substrate made of materials such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP). A driving circuit for controlling the light emission of the light-emitting unit 30 is provided in the driving circuit layer. The driving circuit layer is generally composed of inorganic film layers such as a metal layer, a semiconductor layer (active layer), and an insulating layer. By patterning these inorganic film layers, a driving circuit for controlling the light emission of the light-emitting unit 30 can be formed. There are many ways to implement its specific circuit structure, which will not be repeated here.

[0189] When forming the isolation material layer 20' on the substrate 10, the isolation material layer 20' can be provided as a whole layer, wherein the first opening area A1 and the second opening area A2 can be spaced apart in a direction parallel to the substrate 10. It should be noted that the first opening area A1 can refer to the area of the isolation material layer 20' used to form the first isolation opening 21a, and the second opening area A2 can refer to the area of the isolation material layer 20' used to form the second isolation opening 21b. In addition to the first opening area A1 and the second opening area A2, the isolation material layer 20' may also include other areas surrounding the first opening area A1 and the second opening area A2.

[0190] S12, patterning the isolation material layer 20' to form a first isolation opening 21a in the first opening area A1, and retaining the isolation material layer 20' in the second opening area A2. Specifically, the isolation material layer 20' in the first opening area A1 is patterned to form the first isolation opening 21a.

[0191] S13 , forming the first light-emitting functional layer 32 a and the first electrode 33 of the first light-emitting unit 30 a in the first isolation opening 21 a .

[0192] The first light-emitting functional layer 32a, the first electrode 33 and the corresponding second electrode 31 constitute the first light-emitting unit 30a. During the formation of the first light-emitting functional layer 32a and the first electrode 33, the remaining isolation material layer 20' outside the first opening area A1 may have residues such as Figure 2 The redundant device 50 shown can be formed by chemical reaction during the patterning process of the first light-emitting functional layer 32a, the first electrode 33 and other related film layers. Of course, the redundant device 50 may not be formed in the isolation material layer 20', and this embodiment does not limit this.

[0193] S14. Decontamination treatment is performed on the isolation material layer 20' of the second opening area A2. The decontamination treatment can be used to remove the redundant devices 50 in the second opening area A2 when the redundant devices 50 are present on the isolation material layer 20'. Alternatively, the decontamination treatment can also be used to remove other contaminants on the isolation material layer 20', which is not limited in this embodiment. Decontamination treatment can be implemented in a variety of ways. For example, decontamination can be performed by plasma bombardment, and the gas used during plasma bombardment can include at least one of helium, argon, fluorine, and oxygen. Alternatively, decontamination can be performed by other methods such as etching and dissolution, which is not limited in this embodiment.

[0194] S15 , patterning the isolation material layer 20 ′ to form a second isolation opening 21 b in the second opening area A2 .

[0195] S16: forming a second light-emitting functional layer 32b and a first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b. The second light-emitting functional layer 32b, the first electrode 33 and the corresponding second electrode 31 constitute the second light-emitting unit 30b.

[0196] In the embodiment of the present application, an isolation material layer 20' is first formed on one side of the substrate 10. The isolation material layer 20' includes a first opening region A1 and a second opening region A2. The isolation material layer 20' is then patterned to form a first isolation opening 21a in the first opening region A1, and a first light-emitting functional layer 32a and a first electrode 33 of the first light-emitting unit 30a are formed in the first isolation opening 21a. After the isolation material layer 20' in the second opening region A2 is decontaminated, the isolation material layer 20' is patterned to form a second isolation opening 21b in the second opening region A2. This reduces the risk of contaminants such as the redundant device 50 on the isolation material layer 20' in the second opening region A2 affecting the process quality of the second isolation opening 21b, helps improve the process quality of the second isolation opening 21b, and further improves the quality of subsequently fabricated film layers such as the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b, thereby enhancing the performance of the display panel 100.

[0197] It should be noted that, in the embodiment of the present application, the redundant devices 50 on the side of the isolation material layer 20' facing away from the substrate 10 can be removed in a decontamination treatment or other subsequent processes. Alternatively, it is also possible to remove the redundant devices 50 in each opening area while retaining the redundant devices 50 outside the opening area or only partially remove the redundant devices 50 outside the opening area. That is, in the display panel 100, the redundant devices 50 can be retained on the surface of the side of the isolation structure 20 facing away from the substrate 10. The retained redundant devices 50 can be arranged on the entire surface of the isolation structure 20 facing away from the substrate 10. Alternatively, a portion of the retained redundant devices 50 can be removed in other subsequent processes, and the remaining redundant devices 50 are arranged on the surface of the isolation structure 20 facing away from the substrate 10.

[0198] See also Figure 3 and Figure 4 In some embodiments, before the step of performing a decontamination treatment on the isolation material layer 20' in the second opening area A2, the method further includes:

[0199] S17. Form a first etch stop layer 60 on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10. The first etch stop layer 60 may cover the first light-emitting unit 30a. In addition, the first etch stop layer 60 may also cover other film layers (such as the encapsulation portion 40) on the first light-emitting unit 30a and other areas of the isolation material layer 20' between the first opening area A1 and the second opening area A2. It is sufficient to expose the second opening area A2 relative to the first etch stop layer 60.

[0200] After the step of performing a decontamination treatment on the isolation material layer 20' in the second opening area A2, the method further includes:

[0201] S18. Remove the first etch stop layer 60. The first etch stop layer 60 can be removed immediately after the isolation material layer 20' of the second opening area A2 is decontaminated. Alternatively, the first etch stop layer 60 can be removed after processes such as forming the second isolation opening 21b. This is not limited in this embodiment. There are various ways to remove the first etch stop layer 60. For example, a stripping process can be used to remove the first etch stop layer 60, or other processes such as etching can be used to remove the first etch stop layer 60.

[0202] In these embodiments, before performing the decontamination treatment on the isolation material layer 20' in the second opening area A2, a first etch stop layer 60 is formed on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10. The first etch stop layer 60 protects the first light-emitting unit 30a and its related film layers during the subsequent decontamination treatment, thereby improving the performance of the first light-emitting unit 30a and its related film layers and enhancing the performance of the display panel 100. Furthermore, after the decontamination treatment, the first etch stop layer 60 is removed to prevent the first etch stop layer 60 from affecting the light-emitting effect of the first light-emitting unit 30a.

[0203] Please continue reading Figure 4 Preferably, the isolation material layer 20' further includes a third opening region A3. During the step of forming the first etch stop layer 60 on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10, the first etch stop layer 60 also covers the isolation material layer 20' in the third opening region A3. During the decontamination process of the isolation material layer 20' in the second opening region A2, the first etch stop layer 60 can also protect the isolation material layer 20' in the third opening region A3, thereby improving the yield of the subsequent formation of the third isolation opening 21c and the third light-emitting unit 30c in the third opening region A3.

[0204] The third opening region A3 may be a region of the isolation material layer 20 ′ used to form the third isolation opening 21 c . The third opening region A3 may be spaced apart from the first opening region A1 and the second opening region A2 in a direction parallel to the substrate 10 .

[0205] Optionally, during the step of forming the first etch stop layer 60 on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10, the first etch stop layer 60 may not cover the isolation material layer 20' in the third opening area A3. When the isolation material layer 20' in the second opening area A2 is decontaminated, the isolation material layer 20' in the third opening area A3 may also be decontaminated simultaneously, thereby reducing the difficulty of performing the decontamination process on the isolation material layer 20' in the third opening area A3 before subsequently forming the third isolation opening 21c.

[0206] Preferably, the material of the first etch stop layer 60 includes photoresist. Photoresist can effectively block the effects of etchants and the like on the underlying film layer, thereby improving its protective effect on the underlying first light-emitting unit 30a. In addition, using photoresist to form the first etch stop layer 60 can also reduce the difficulty of removing the first etch stop layer 60.

[0207] Please continue reading Figure 2 and Figure 4Preferably, in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a, a redundant device 50 is formed on at least part of the isolation material layer 20 ′ on a side facing away from the substrate 10 .

[0208] The redundant device 50 may be formed during the fabrication of the first light-emitting unit 30a and its associated layers by a chemical reaction between the materials of the first light-emitting functional layer 32a, the isolation material layer 20', and the etchant during patterning through an etching process. The redundant device 50 is located on the side of the isolation material layer 20' facing away from the substrate 10 in the second opening area A2 and / or the third opening area A3.

[0209] The step of performing a decontamination treatment on the isolation material layer 20' in the second opening area A2 includes:

[0210] At least a portion of the redundant devices 50 in the second opening area A2 is removed.

[0211] In these embodiments, since redundant devices 50 may be formed on the side of at least part of the isolation material layer 20' facing away from the substrate 10 in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a, at least part of the redundant devices 50 in the second opening area A2 are first removed before the second isolation opening 21b is formed in the second opening area A2. This can reduce the risk of the process quality of the second isolation opening 21b being affected by contaminants such as the redundant devices 50 on the isolation material layer 20' in the second opening area A2, help improve the quality of the film layers such as the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b prepared subsequently, and enhance the performance of the display panel 100.

[0212] Optionally, the step of performing decontamination treatment on the isolation material layer 20 ′ in the second opening area A2 may further include removing other contaminants in the second opening area A2 to reduce the risk of the other contaminants affecting the process quality of the second isolation opening 21 b .

[0213] Preferably, during the step of decontaminating the isolation material layer 20' in the second opening area A2, a plasma bombardment process is used to decontaminate the isolation material layer 20' in the second opening area A2. The plasma bombardment process can effectively remove contaminants such as the redundant devices 50 on the isolation material layer 20' in the second opening area A2, while also reducing damage to the isolation material layer 20' in the second opening area A2, thereby further improving the quality of the subsequent process for forming the second isolation opening 21b.

[0214] Please continue reading Figure 4Preferably, in the step of forming the first etch stop layer 60 on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10, the first etch stop layer 60 covers a portion of the redundant device 50. The portion of the redundant device 50 covered by the first etch stop layer 60 is the redundant device 50 outside the second opening area A2. For example, the first etch stop layer 60 may cover the redundant device 50 on the isolation material layer 20' located in other areas between the first opening area A1 and the second opening area A2. The portion of the redundant device 50 may remain on the corresponding isolation material layer 20', which can support the packaging portion 40 used to encapsulate the first light-emitting unit 30a, reduce the risk of the packaging portion 40 collapsing, etc., and thus help improve the packaging effect of the packaging portion 40 on the first light-emitting unit 30a.

[0215] See also Figure 5 and Figure 6 In some embodiments, the isolation material layer 20' further includes a third opening area A3. After forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, the following steps are further included:

[0216] S19, patterning the isolation material layer 20' to form a third isolation opening 21c in the third opening area A3. During the process of forming the first isolation opening 21a in the first opening area A1 and the second isolation opening 21b in the second opening area A2, the isolation material layer 20' in the third opening area A3 is retained.

[0217] S20 , forming the third light-emitting functional layer 32 c and the first electrode 33 of the third light-emitting unit 30 c in the third isolation opening 21 c .

[0218] In these embodiments, after the second light-emitting unit 30b is prepared, a third isolation opening 21c is further formed in the third opening area A3 of the isolation material layer 20', and a third light-emitting functional layer 32c and a first electrode 33 of the third light-emitting unit 30c are formed in the third isolation opening 21c, which helps to further improve the display effect of the display panel 100.

[0219] It should be noted that, in the embodiment of the present application, any two of the first light-emitting unit 30 a , the second light-emitting unit 30 b and the third light-emitting unit 30 c have different light-emitting colors, so as to realize color picture display on the display panel 100 .

[0220] See also Figure 7 Preferably, before patterning the isolation material layer 20' and forming the third isolation opening 21c in the third opening area A3, the method further includes:

[0221] S21 , performing a decontamination process on the isolation material layer 20 ′ in the third opening area A3 .

[0222] In these embodiments, before forming the third isolation opening 21c in the third opening area A3, the isolation material layer 20' of the third opening area A3 is first decontaminated, thereby reducing the risk of contaminants such as the redundant device 50 in the third opening area A3 affecting the process quality of the subsequently prepared third isolation opening 21c, thereby helping to improve the quality of the film layers such as the third light-emitting functional layer 32c and the first electrode 33 of the subsequently prepared third light-emitting unit 30c, and improving the performance of the display panel 100.

[0223] Preferably, in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a and / or in the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, at least a portion of the isolation material layer 20' is formed on a side facing away from the substrate 10 as follows: Figure 6 Redundant device 50 is shown.

[0224] The redundant device 50 may include a redundant device 50 formed during the preparation of the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a, and / or, the redundant device 50 may include a redundant device 50 formed during the preparation of the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b.

[0225] It can be known that the redundant device 50 formed during the preparation of the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b can be formed by chemical reaction between the materials of the second light-emitting functional layer 32b, the isolation material layer 20' and other film layers and the etchant during the patterning process through the etching process.

[0226] The step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3 includes:

[0227] At least a portion of the redundant devices 50 in the third opening area A3 is removed.

[0228] In these embodiments, since redundant devices 50 may be formed on the side of at least part of the isolation material layer 20' facing away from the substrate 10 in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a and / or in the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, at least part of the redundant devices 50 in the third opening area A3 are removed before forming the third isolation opening 21c in the third opening area A3, thereby reducing the risk of the isolation material layer 20' in the third opening area A3 affecting the process quality of the third isolation opening 21c due to contaminants such as the redundant devices 50, helping to improve the quality of the film layers such as the third light-emitting functional layer 32c and the first electrode 33 of the third light-emitting unit 30c prepared subsequently, and improving the performance of the display panel 100.

[0229] Optionally, the step of performing decontamination treatment on the isolation material layer 20 ′ in the third opening area A3 may further include removing other contaminants in the third opening area A3 to reduce the risk of the other contaminants affecting the process quality of the third isolation opening 21 c.

[0230] Preferably, during the step of decontaminating the isolation material layer 20' in the third opening area A3, a plasma bombardment process is used to decontaminate the isolation material layer 20' in the third opening area A3. The plasma bombardment process can effectively remove contaminants such as the redundant devices 50 on the isolation material layer 20' in the third opening area A3, while also reducing damage to the isolation material layer 20' in the third opening area A3, thereby further improving the quality of the subsequent process for forming the third isolation opening 21c.

[0231] See also Figure 8 and Figure 9 In some embodiments, before the step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3, the method further includes:

[0232] S22. Form a second etch stop layer 70 on the side of the first electrode 33 of the first light-emitting unit 30a and / or the second light-emitting unit 30b facing away from the substrate 10. The second etch stop layer 70 may cover the first light-emitting unit 30a and / or the second light-emitting unit 30b. In addition, the second etch stop layer 70 may also cover other film layers on the first light-emitting unit 30a and / or the second light-emitting unit 30b and the surrounding areas of the first light-emitting unit 30a and / or the second light-emitting unit 30b. It is only necessary to expose the area of the third opening area A3 for forming the third isolation opening 21c relative to the second etch stop layer 70.

[0233] After the step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3, the method further includes:

[0234] S23. Remove the second etch stop layer 70. The second etch stop layer 70 can be removed immediately after the isolation material layer 20' in the third opening area A3 is decontaminated. Alternatively, the second etch stop layer 70 can be removed after processes such as forming the third isolation opening 21c. This is not limited in this embodiment. There are various ways to remove the second etch stop layer 70. For example, a stripping process can be used to remove the second etch stop layer 70, or other processes such as etching can be used to remove the second etch stop layer 70.

[0235] In these embodiments, before performing the desmear treatment on the isolation material layer 20' in the third opening area A3, a second etch stop layer 70 is first formed on the side of the first light-emitting unit 30a and / or the second light-emitting unit 30b facing away from the substrate 10. The second etch stop layer 70 protects the first light-emitting unit 30a and / or the second light-emitting unit 30b during the subsequent desmear treatment, thereby helping to improve the performance of the first light-emitting unit 30a and / or the second light-emitting unit 30b and enhance the performance of the display panel 100. Furthermore, after the desmear treatment, the second etch stop layer 70 is removed to prevent the second etch stop layer 70 from affecting the light-emitting effect of the first light-emitting unit 30a and / or the second light-emitting unit 30b.

[0236] Preferably, the second etch stop layer 70 includes a photoresist. The photoresist can effectively block the effects of the etchant and the like on the underlying film layer, thereby improving its protective effect on the underlying first light-emitting unit 30a and / or second light-emitting unit 30b. In addition, using photoresist to form the second etch stop layer 70 can also reduce the difficulty of removing the second etch stop layer 70.

[0237] Preferably, in the step of forming the second etch stop layer 70 on the side of the first electrode 33 of the first light emitting unit 30 a and / or the second light emitting unit 30 b facing away from the substrate 10 , the second etch stop layer 70 covers part of the redundant device 50 .

[0238] The portion of the redundant device 50 covered by the second etch stop layer 70 may be a redundant device 50 outside the third opening area A3. The portion of the redundant device 50 may be retained on the isolation material layer 20' in other areas between any two of the first opening area A1, the second opening area A2, and the third opening area A3. When the packaging portion 40 for encapsulating the light-emitting unit 30 is subsequently prepared, the at least portion of the retained redundant device 50 may be located on the side of the packaging portion 40 facing the substrate 10 to support the packaging portion 40 and reduce the risk of collapse of the packaging portion 40, thereby helping to improve the packaging effect of the packaging portion 40 on each light-emitting unit 30.

[0239] Please continue reading Figure 6In some embodiments, during the step of forming the third light-emitting functional layer 32c and the first electrode 33 of the third light-emitting unit 30c in the third isolation opening 21c, an encapsulation portion 40 for encapsulating the third light-emitting unit 30c is formed on the side of the first electrode 33 of the third light-emitting unit 30c facing away from the substrate 10. The encapsulation portion 40 can independently encapsulate the third light-emitting unit 30c, thereby helping to improve the performance of the third light-emitting unit 30c.

[0240] Optionally, the encapsulation portion 40 for encapsulating the third light-emitting unit 30c may extend from the third isolation opening 21c to the side of the isolation material layer 20' surrounding the third isolation opening 21c that is away from the substrate 10. At this time, the partial redundant device 50 may be arranged between the isolation material layer 20' surrounding the third isolation opening 21c and the corresponding partial encapsulation portion 40 to support the partial encapsulation portion 40.

[0241] See also Figure 10 Preferably, the step of forming the third light-emitting functional layer 32c and the first electrode 33 of the third light-emitting unit 30c in the third isolation opening 21c includes:

[0242] S201. Form a third light-emitting material layer, a first electrode 33 material layer, and a first encapsulation material layer on a side of the isolation material layer 20' facing away from the substrate 10. The third light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer may be stacked sequentially in a direction away from the substrate 10, and at least one of the three may be disposed as an entire layer on one side of the substrate 10.

[0243] S202: Patterning the third light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer to form the third light-emitting functional layer 32c of the third light-emitting unit 30c, the first electrode 33, and the encapsulation portion 40 for encapsulating the third light-emitting unit 30c. Specifically, an etching technique such as dry etching can be used to pattern at least one of the third light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer. Of course, an etching technique can also be used to pattern one or both of the third light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer, while another technique can be used to pattern the remaining one, and this embodiment does not limit this.

[0244] In these embodiments, a third light-emitting material layer, a first electrode 33 material layer and a first encapsulation material layer are first formed on the side of the isolation material layer 20' facing away from the substrate 10, and then the third light-emitting material layer, the first electrode 33 material layer and the first encapsulation material layer are patterned to form a third light-emitting functional layer 32c, a first electrode 33 and an encapsulation portion 40 for encapsulating the third light-emitting unit 30c of the third light-emitting unit 30c, so as to achieve independent encapsulation of the third light-emitting unit 30c, which helps to improve the performance of the third light-emitting unit 30c.

[0245] Preferably, after the step of patterning the third light-emitting material layer, the first electrode 33 material layer and the first encapsulation material layer, the method further includes:

[0246] A second encapsulation layer is formed on a side of the encapsulation portion 40 facing away from the substrate 10. The second encapsulation layer can further encapsulate each light-emitting unit 30, thereby helping to improve the encapsulation performance of the display panel 100.

[0247] Preferably, after the step of forming a second encapsulation layer on the side of the encapsulation portion 40 facing away from the substrate 10 , the method further includes:

[0248] A third encapsulation layer is formed on a side of the second encapsulation layer facing away from the substrate 10. The third encapsulation layer can further encapsulate each light-emitting unit 30, thereby helping to improve the encapsulation performance of the display panel 100.

[0249] Optionally, the encapsulation portion 40 may include an inorganic material. For example, the encapsulation portion 40 may be made of a material such as silicon oxide, silicon nitride, or silicon oxynitride, which can provide good mechanical support and encapsulation protection to protect the display panel 100 from environmental influences. Furthermore, the encapsulation portion 40 made of an inorganic material can effectively prevent harmful substances such as moisture and oxygen from entering the interior of the display panel 100, thereby improving the service life and stability of the display panel 100.

[0250] Optionally, the second encapsulation layer may include an organic material. The second encapsulation layer may be made of an organic material such as a polymer. The second encapsulation layer may be thicker than the encapsulation portion 40 and more flexible, thereby better adapting to the bends and curvatures of the display panel 100. Furthermore, the organic material may buffer external forces.

[0251] Optionally, the third encapsulation layer may include inorganic materials, thereby providing good mechanical support and encapsulation protection to prevent the display panel 100 from being affected by the external environment, and further isolate external harmful substances such as moisture and oxygen from entering the interior of the display panel 100.

[0252] See also Figure 6 In some embodiments, during the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a, an encapsulation portion 40 for encapsulating the first light-emitting unit 30a is formed on the side of the first electrode 33 of the first light-emitting unit 30a facing away from the substrate 10. The encapsulation portion 40 can independently encapsulate the first light-emitting unit 30a, thereby helping to improve the performance of the first light-emitting unit 30a.

[0253] Optionally, the encapsulation portion 40 for encapsulating the first light-emitting unit 30a may extend from the first isolation opening 21a to the side of the isolation material layer 20' surrounding the first isolation opening 21a that is away from the substrate 10. In this case, the partially redundant device 50 may be arranged between the isolation material layer 20' surrounding the first isolation opening 21a and the corresponding partial encapsulation portion 40 to support the partial encapsulation portion 40.

[0254] See also Figure 11 Preferably, the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a includes:

[0255] S131. Form a first light-emitting material layer, a first electrode 33 material layer, and a first encapsulation material layer on a side of the isolation material layer 20' facing away from the substrate 10. The first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer may be stacked sequentially in a direction away from the substrate 10, and at least one of the three may be disposed as an entire layer on one side of the substrate 10.

[0256] S132. Pattern the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer to form the first light-emitting functional layer 32a of the first light-emitting unit 30a, the first electrode 33, and the encapsulation portion 40 for encapsulating the first light-emitting unit 30a. Specifically, an etching technique such as dry etching can be used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer. Of course, an etching technique can also be used to pattern one or both of the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer, while other techniques can be used to pattern the remaining one. This embodiment does not limit this.

[0257] In these embodiments, a first light-emitting material layer, a first electrode 33 material layer, and a first encapsulation material layer are first formed on the side of the isolation material layer 20' facing away from the substrate 10, and then the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer are patterned to form the first light-emitting functional layer 32a, the first electrode 33, and the encapsulation portion 40 for encapsulating the first light-emitting unit 30a of the first light-emitting unit 30a, so as to achieve independent encapsulation of the first light-emitting unit 30a, which helps to improve the performance of the first light-emitting unit 30a.

[0258] Preferably, in the step of patterning the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer.

[0259] The etching process has high-precision graphic capabilities. At the same time, it has the characteristics of material compatibility and stability. In addition, compared with other processes, the etching process can also reduce damage to the underlying film layer. Therefore, the etching process is used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, which helps to improve the performance of the packaging part 40 and the first light-emitting unit 30a, thereby improving the performance of the display panel 100.

[0260] Optionally, in the step of patterning the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, a dry etching process may be used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer.

[0261] Preferably, the material of the side of the isolation material layer 20 ′ facing away from the substrate 10 includes titanium, so that the side of the isolation material layer 20 ′ facing away from the substrate 10 can have good electrical conductivity and oxidation resistance.

[0262] Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer using an etching process, the isolation material layer 20 ′, the first light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device 50 .

[0263] Specifically, the first light-emitting material layer may include an organic material. After the first light-emitting material layer is prepared and formed, a portion of the first light-emitting material layer will directly cover the side of the isolation material layer 20' facing away from the substrate 10, and will be in direct contact with the side of the isolation material layer 20' facing away from the substrate 10. Therefore, when a dry etching process is used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer, the etching gas, the first light-emitting material layer located on the side of the isolation material layer 20' facing away from the substrate 10, and the corresponding titanium in the isolation material layer 20' may chemically react to form a redundant device 50. Because the redundant device 50 has deteriorated compared to the original materials of the first light-emitting material layer and the isolation material layer 20', it is difficult to be etched away by the etching gas.

[0264] Therefore, in an embodiment of the present application, before the isolation material layer 20' is patterned to form the second isolation opening 21b located in the second opening area A2, the isolation material layer 20' of the second opening area A2 is first decontaminated. This can remove at least part of the contamination areas such as the redundant devices 50 on the surface of the isolation material layer 20' of the second opening area A2, thereby reducing the risk of the process quality of the second isolation opening 21b being affected by contaminants such as the redundant devices 50 on the isolation material layer 20' of the second opening area A2, helping to improve the quality of the film layers such as the second light-emitting functional layer 32b and the first electrode 33 of the subsequently prepared second light-emitting unit 30b, thereby improving the performance of the display panel 100.

[0265] Furthermore, before patterning the isolation material layer 20' to form the third isolation opening 21c located in the third opening area A3, the isolation material layer 20' in the third opening area A3 is first subjected to a decontamination treatment, which can remove at least part of the redundant devices 50 and other contaminants on the surface of the isolation material layer 20' in the third opening area A3, thereby reducing the risk of the isolation material layer 20' in the third opening area A3 affecting the process quality of the second isolation opening 21b due to the presence of contaminants such as redundant devices 50, and helping to improve the quality of the third light-emitting functional layer 32c and the first electrode 33 and other film layers of the subsequently prepared third light-emitting unit 30c, thereby further improving the performance of the display panel 100.

[0266] See also Figure 6 In some embodiments, during the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, an encapsulation portion 40 for encapsulating the second light-emitting unit 30b is formed on the side of the first electrode 33 of the second light-emitting unit 30b facing away from the substrate 10. The encapsulation portion 40 can independently encapsulate the second light-emitting unit 30b, thereby helping to improve the performance of the second light-emitting unit 30b.

[0267] Optionally, the encapsulation portion 40 for encapsulating the second light-emitting unit 30b may extend from the second isolation opening 21b to the side of the isolation material layer 20' surrounding the second isolation opening 21b that faces away from the substrate 10. In this case, the partially redundant device 50 may be disposed between the isolation material layer 20' surrounding the second isolation opening 21b and the corresponding portion of the encapsulation portion 40 to support the portion of the encapsulation portion 40. In some embodiments, the orthographic projections of adjacent encapsulation portions 40 on the substrate 10 may overlap or may not overlap. In some embodiments, adjacent encapsulation portions 40 may have gaps or be in contact with each other.

[0268] See also Figure 12 Preferably, the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b includes:

[0269] S161. Form a second light-emitting material layer, a first electrode 33 material layer, and a first encapsulation material layer on a side of the isolation material layer 20' facing away from the substrate 10. The second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer may be stacked sequentially in a direction away from the substrate 10, and at least one of the three may be disposed as an entire layer on one side of the substrate 10.

[0270] S162. Pattern the second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer to form the second light-emitting functional layer 32b, the first electrode 33, and the encapsulation portion 40 for encapsulating the second light-emitting unit 30b of the second light-emitting unit 30b. Specifically, an etching technique such as dry etching can be used to pattern at least one of the second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer. Of course, an etching technique can also be used to pattern one or both of the second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer, while other techniques can be used to pattern the remaining one. This embodiment does not limit this.

[0271] In these embodiments, a second light-emitting material layer, a first electrode 33 material layer, and a first encapsulation material layer are first formed on the side of the isolation material layer 20' facing away from the substrate 10, and then the second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer are patterned to form the second light-emitting functional layer 32b, the first electrode 33, and the encapsulation portion 40 for encapsulating the second light-emitting unit 30b of the second light-emitting unit 30b, so as to achieve independent encapsulation of the second light-emitting unit 30b, which helps to improve the performance of the second light-emitting unit 30b.

[0272] Preferably, in the step of patterning the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer.

[0273] The etching process has high-precision graphic capabilities. At the same time, it has the characteristics of material compatibility and stability. In addition, compared with other processes, the etching process can also reduce damage to the underlying film layer. Therefore, the use of the etching process to pattern the second light-emitting material layer, the first electrode 33 material layer and at least one of the first packaging material layer helps to improve the performance of the packaging part 40 and the second light-emitting unit 30b, thereby improving the performance of the display panel 100.

[0274] Optionally, in the step of patterning the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, a dry etching process can be used to pattern at least one of the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer.

[0275] Preferably, the material of the side of the isolation material layer 20 ′ facing away from the substrate 10 includes titanium, so that the side of the isolation material layer 20 ′ facing away from the substrate 10 can have good electrical conductivity and oxidation resistance.

[0276] Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer using an etching process, the isolation material layer 20 ′, the second light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device 50 .

[0277] Specifically, the second light-emitting material layer may include an organic material. After the second light-emitting material layer is prepared and formed, a portion of the second light-emitting material layer will directly cover the side of the isolation material layer 20' facing away from the substrate 10, and will be in direct contact with the side of the isolation material layer 20' facing away from the substrate 10. Therefore, when the second light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer are patterned using a dry etching process, the etching gas, the second light-emitting material layer located on the side of the isolation material layer 20' facing away from the substrate 10, and the corresponding titanium in the isolation material layer 20' may chemically react to form a redundant device 50. Because the redundant device 50 has deteriorated compared to the original second light-emitting material layer and isolation material layer 20', it is difficult to be etched away by the etching gas.

[0278] Therefore, in an embodiment of the present application, before the isolation material layer 20' is patterned to form the third isolation opening 21c located in the third opening area A3, the isolation material layer 20' in the third opening area A3 is first decontaminated to remove at least part of the redundant devices 50 and other contaminants on the surface of the isolation material layer 20' in the third opening area A3, thereby reducing the risk of the isolation material layer 20' in the third opening area A3 affecting the process quality of the second isolation opening 21b due to the presence of contaminants such as redundant devices 50, and helping to improve the quality of the third light-emitting functional layer 32c and the first electrode 33 and other film layers of the subsequently prepared third light-emitting unit 30c, thereby further improving the performance of the display panel 100.

[0279] See also Figure 13 and Figure 14 In some embodiments, the isolation material layer 20' is patterned to form the first isolation opening 21a in the first opening area A1, including:

[0280] S121 , patterning the isolation material layer 20 ′ to form a first preliminary opening K1 in the first opening area A1 .

[0281] S122 , performing side etching on the isolation material layer 20 ′ exposed through the first preliminary opening K1 to form a first isolation opening 21 a . In a direction parallel to the substrate 10 , the first isolation opening 21 a protrudes closer to the substrate 10 than the first isolation opening 21 a further away from the substrate 10 .

[0282] In these embodiments, the isolation material layer 20' is first patterned to form a first preliminary opening K1 in the first opening area A1. The first preliminary opening K1 can penetrate the isolation material layer 20' and can be a part of the first isolation opening 21a. Subsequently, the portion of the isolation material layer 20' exposed through the first preliminary opening K1 can be laterally etched in a direction parallel to the substrate 10, thereby forming a first isolation opening 21a of a specific morphology. Among them, the portion of the first isolation opening 21a close to the substrate 10 is protruding relative to the portion away from the substrate 10, that is, the corresponding portion of the isolation material layer 20' close to the substrate 10 can be recessed relative to the portion away from the substrate 10, so that the first light-emitting material layer and the first electrode 33 material layer can be separated into the first light-emitting functional layer 32a and the first electrode 33 in the subsequent process.

[0283] See also Figure 15 and Figure 16 Preferably, the step of patterning the isolation material layer 20' to form the second isolation opening 21b in the second opening area A2 includes:

[0284] S151 , patterning the isolation material layer 20 ′ to form a second preliminary opening K2 in the second opening area A2 ;

[0285] S152 , performing side etching on the isolation material layer 20 ′ exposed through the second preliminary opening K2 to form a second isolation opening 21 b . In a direction parallel to the substrate 10 , the second isolation opening 21 b protrudes from the side away from the substrate 10 .

[0286] In these embodiments, the isolation material layer 20' is first patterned to form a second preliminary opening K2 in the second opening area A2. The second preliminary opening K2 can penetrate the isolation material layer 20' and can be a part of the second isolation opening 21b. Subsequently, the portion of the isolation material layer 20' exposed through the second preliminary opening K2 can be laterally etched in a direction parallel to the substrate 10 to form a second isolation opening 21b of a specific morphology. The portion of the second isolation opening 21b close to the substrate 10 is protruding relative to the portion away from the substrate 10, that is, the portion of the corresponding isolation material layer 20' close to the substrate 10 can be recessed relative to the portion away from the substrate 10, so that the second light-emitting material layer and the first electrode 33 material layer can be separated into the second light-emitting functional layer 32b and the first electrode 33 in the subsequent process.

[0287] Optionally, the step of patterning the isolation material layer 20' to form the third isolation opening 21c in the third opening area A3 may include:

[0288] The isolation material layer 20 ′ is patterned to form a third preliminary opening in the third opening area A3 .

[0289] The isolation material layer 20 ′ exposed through the third preliminary opening is laterally etched to form a third isolation opening 21 c . In a direction parallel to the substrate 10 , the third isolation opening 21 c near the substrate 10 is protruding relative to the portion away from the substrate 10 .

[0290] In these embodiments, the isolation material layer 20' is first patterned to form a third preliminary opening in the third opening area A3. The third preliminary opening can penetrate the isolation material layer 20' and can be a part of the third isolation opening 21c. Subsequently, the portion of the isolation material layer 20' exposed through the third preliminary opening can be laterally etched in a direction parallel to the substrate 10, thereby forming a third isolation opening 21c with a specific morphology. Among them, the portion of the third isolation opening 21c close to the substrate 10 is protruding relative to the portion away from the substrate 10, that is, the corresponding portion of the isolation material layer 20' close to the substrate 10 can be recessed relative to the portion away from the substrate 10, so that the third light-emitting material layer and the first electrode 33 material layer can be separated into the third light-emitting functional layer 32c and the first electrode 33 in the subsequent process.

[0291] Please continue reading Figure 14 Preferably, the step of forming the isolation material layer 20' on one side of the substrate 10 includes:

[0292] A first sub-isolation material layer 22 ′ and a second sub-isolation material layer 23 ′ are sequentially formed on one side of the substrate 10 .

[0293] In the step of performing side etching on the isolation material layer 20 ′ exposed through the first preliminary opening K1 to form the first isolation opening 21 a , the first sub-isolation material layer 22 ′ exposed through the first preliminary opening K1 is performed side etching to form the first isolation opening 21 a .

[0294] In these embodiments, the isolation material layer 20' is first patterned to form a first preliminary opening K1. The first preliminary opening K1 can penetrate the first sub-isolation material layer 22' and the second sub-isolation material layer 23'. Subsequently, the first sub-isolation material layer 22' exposed through the first preliminary opening K1 can be laterally etched in a direction parallel to the substrate 10, so that the sidewalls of the first sub-isolation material layer 22' are recessed relative to the second sub-isolation material layer 23', thereby forming a first isolation opening 21a with a specific morphology. In some embodiments, the isolation material layer 20' can be a three-layer material. After the first isolation opening 21a is formed, the bottom film layer of the isolation material layer 20' is extended relative to the middle film layer of the isolation material layer 20', so that the subsequent first electrode 33 can overlap with this extended portion.

[0295] Please continue reading Figure 16 Preferably, in the step of performing side etching on the isolation material layer 20' exposed through the second preliminary opening K2 to form the second isolation opening 21b, the first sub-isolation material layer 22' exposed through the second preliminary opening K2 is also performed side etching to form the second isolation opening 21b.

[0296] In these embodiments, after the isolation material layer 20' is patterned to form the second preliminary opening K2, the second preliminary opening K2 can penetrate the first sub-isolation material layer 22' and the second sub-isolation material layer 23'. Subsequently, the first sub-isolation material layer 22' exposed through the second preliminary opening K2 is laterally etched in a direction parallel to the substrate 10, so that the sidewalls of the first sub-isolation material layer 22' are aligned with the sidewalls of the second sub-isolation material layer 23', thereby forming a second isolation opening 21b with a specific morphology.

[0297] Optionally, in the step of performing side etching on the isolation material layer 20 ′ exposed through the third preliminary opening to form the third isolation opening 21 c , the first sub-isolation material layer 22 ′ exposed through the third preliminary opening is also performed side etching to form the third isolation opening 21 c .

[0298] In these embodiments, after the isolation material layer 20' is patterned to form the third preliminary opening, the third preliminary opening can penetrate the first sub-isolation material layer 22' and the second sub-isolation material layer 23'. Subsequently, the first sub-isolation material layer 22' exposed through the third preliminary opening is laterally etched in a direction parallel to the substrate 10, so that the sidewalls of the first sub-isolation material layer 22' are aligned with the sidewalls of the second sub-isolation material layer 23', thereby forming a third isolation opening 21c with a specific morphology.

[0299] It should be noted that after the first isolation opening 21a, the second isolation opening 21b, and the third isolation opening 21c are formed, the remaining isolation material layer 20' constitutes the isolation structure 20. The remaining first sub-isolation material layer 22' constitutes the first isolation portion 22, and the remaining second sub-isolation material layer 23' constitutes the second isolation portion 23. The second isolation portion 23 is located on the side of the first isolation portion 22 away from the substrate 10 and may protrude relative to the first isolation portion 22 toward the corresponding isolation opening 21. The redundant device 50 may be retained entirely or partially on the surface of the second isolation portion 23 facing away from the substrate 10.

[0300] Preferably, the material of the first sub-isolating material layer 22 ′ includes aluminum, so that the formed first isolating portion 22 can have good conductive properties.

[0301] Preferably, the material of the second sub-isolating material layer 23 ′ includes titanium, so that the formed second isolating portion 23 can have good electrical conductivity and oxidation resistance.

[0302] It can be seen that during the preparation of the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a, the second sub-isolating material layer 23', the first light-emitting material layer, and the etching gas can chemically react to form the redundant device 50. In addition, during the preparation of the second light-emitting functional layer 32b and the second electrode 31 of the second light-emitting unit 30b, the second sub-isolating material layer 23', the second light-emitting material layer, and the etching gas can chemically react to form the redundant device 50.

[0303] Please continue reading Figure 14 In some embodiments, before the step of forming the isolation material layer 20' on one side of the substrate 10, the method further includes:

[0304] A pixel definition material layer 80 ′ is formed on one side of the substrate 10 .

[0305] After patterning the isolation material layer 20' to form the first isolation opening 21a in the first opening area A1, the method further includes:

[0306] A first pixel opening 82 a is formed, and the first pixel opening 82 a communicates with the first isolation opening 21 a .

[0307] In these embodiments, a pixel definition material layer 80' is first formed on one side of the substrate 10, and then an isolation material layer 20' is formed on the side of the pixel definition material layer 80' facing away from the substrate 10. The isolation material layer 20' is then patterned to form a first isolation opening 21a in the first opening area A1. The pixel definition material layer 80' exposed by the first isolation opening 21a is further patterned to form a first pixel opening 82a, so that the first pixel opening 82a is connected to the first isolation opening 21a, thereby helping to increase the height difference of the first isolation opening 21a and reducing the difficulty of separating the first light-emitting material layer and the first electrode 33 material layer at the first isolation opening 21a to form the first light-emitting functional layer 32a and the first electrode 33.

[0308] Preferably, after patterning the isolation material layer 20' to form the second isolation opening 21b in the second opening area A2, the method further includes:

[0309] A second pixel opening 82 is formed, and the second pixel opening 82 communicates with the second isolation opening 21 b.

[0310] In these embodiments, after the isolation material layer 20' is patterned to form the second isolation opening 21b in the second opening area A2, the pixel definition material layer 80' exposed by the second isolation opening 21b is further patterned to form a second pixel opening 82, so that the second pixel opening 82 is connected to the second isolation opening 21b, thereby helping to increase the height difference of the second isolation opening 21b and reducing the difficulty of separating the second light-emitting material layer and the first electrode 33 material layer at the second isolation opening 21b to form the second light-emitting functional layer 32b and the first electrode 33.

[0311] Preferably, the step of patterning the isolation material layer 20' to form the third isolation opening 21c in the third opening area A3 further includes:

[0312] A third pixel opening is formed, and the third pixel opening is communicated with the third isolation opening 21 c.

[0313] In these embodiments, after the isolation material layer 20' is patterned to form a third isolation opening 21c in the third opening area A3, the pixel definition material layer 80' exposed by the third isolation opening 21c is further patterned to form a third pixel opening, so that the third pixel opening is connected to the third isolation opening 21c, thereby helping to increase the height difference of the third isolation opening 21c and reducing the difficulty of separating the third light-emitting material layer and the first electrode 33 material layer at the third isolation opening 21c to form the third light-emitting functional layer 32c and the first electrode 33.

[0314] See also Figure 17 In a second aspect, the present application provides a method for manufacturing a display panel 100, comprising:

[0315] S11, forming an isolation material layer 20' on one side of the substrate 10, wherein the isolation material layer 20' includes a first opening area A1 and a second opening area A2;

[0316] S12, patterning the isolation material layer 20' to form a first isolation opening 21a in the first opening area A1, and retaining the isolation material layer 20' in the second opening area A2;

[0317] S13, forming the first light-emitting functional layer 32a, the first electrode 33 and the encapsulation portion 40 for encapsulating the first light-emitting unit 30a in the first isolation opening 21a;

[0318] S17, forming a first etching stopper layer 60 on a side of the packaging portion 40 corresponding to the first light-emitting unit 30a facing away from the substrate 10;

[0319] S14, performing a decontamination process on the isolation material layer 20' in the second opening area A2;

[0320] S15, patterning the isolation material layer 20' to form a second isolation opening 21b in the second opening area A2;

[0321] S16 , forming the second light-emitting functional layer 32 b , the first electrode 33 , and the encapsulation portion 40 for encapsulating the second light-emitting unit 30 b in the second isolation opening 21 b .

[0322] In these embodiments, an isolation material layer 20' is first formed on one side of the substrate 10, and the isolation material layer 20' includes a first opening area A1 and a second opening area A2. Then, the isolation material layer 20' is patterned to form a first isolation opening 21a in the first opening area A1, retaining the isolation material layer 20' in the second opening area A2, and forming a first light-emitting functional layer 32a, a first electrode 33, and an encapsulation portion 40 for encapsulating the first light-emitting unit 30a in the first isolation opening 21a. Subsequently, a first etching stopper layer 60 is formed on the side of the packaging portion 40 corresponding to the first light-emitting unit 30a facing away from the substrate 10, and then the isolation material layer 20' of the second opening area A2 is decontaminated to remove at least part of the redundant devices 50 and other contaminants in the second opening area A2. After the contaminants are removed, the isolation material layer 20' is patterned again to form a second isolation opening 21b in the second opening area A2, thereby reducing the risk of contaminants such as the redundant devices 50 on the isolation material layer 20' of the second opening area A2 affecting the process quality of the second isolation opening 21b, helping to improve the process quality of the second isolation opening 21b, and further improving the quality of the second light-emitting functional layer 32b and the first electrode 33 and other film layers of the subsequently prepared second light-emitting unit 30b, thereby improving the performance of the display panel 100.

[0323] It should be noted that at least part of the technical solutions in the preparation method provided in the second aspect of the present application have the same or similar technical effects as the corresponding technical solutions in the preparation method provided in the first aspect of the present application. Therefore, the technical effects of the following embodiments will not be repeated here.

[0324] In some embodiments, after the step of performing a decontamination treatment on the isolation material layer 20' in the second opening area A2, the method further includes:

[0325] removing the first etch stop layer 60;

[0326] Preferably, the material of the first etch stop layer 60 includes photoresist;

[0327] Preferably, in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a, a redundant device 50 is formed on at least a side of the isolation material layer 20' facing away from the substrate 10;

[0328] The step of performing a decontamination treatment on the isolation material layer 20' in the second opening area A2 includes:

[0329] removing at least part of the redundant devices 50 in the second opening area A2;

[0330] Preferably, in the step of performing a decontamination treatment on the isolation material layer 20 ′ in the second opening area A2 , a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer 20 ′ in the second opening area A2 ;

[0331] Preferably, in the step of forming the first etch stop layer 60 on the side of the packaging portion 40 corresponding to the first light-emitting unit 30a facing away from the substrate 10, the first etch stop layer 60 covers a portion of the redundant device 50;

[0332] Preferably, the isolation material layer 20 ′ further includes a third opening area A3. In the step of forming the first etch stop layer 60 on the side of the packaging portion 40 corresponding to the first light-emitting unit 30 a facing away from the substrate 10 , the first etch stop layer 60 also covers the isolation material layer 20 ′ in the third opening area A3.

[0333] Preferably, after the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, the method further includes:

[0334] Performing patterning on the isolation material layer 20' to form a third isolation opening 21c in the third opening area A3;

[0335] A third light-emitting functional layer 32c, a first electrode 33 and an encapsulation portion 40 for encapsulating the third light-emitting unit 30c are formed in the third isolation opening 21c;

[0336] Preferably, before the step of patterning the isolation material layer 20' and forming the third isolation opening 21c in the third opening area A3, the method further includes:

[0337] Performing a decontamination treatment on the isolation material layer 20' in the third opening area A3;

[0338] Preferably, before the step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3, the method further includes:

[0339] A second etch stop layer 70 is formed on a side of the packaging portion 40 corresponding to the first light-emitting unit 30a and / or the second light-emitting unit 30b facing away from the substrate 10;

[0340] After the step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3, the method further includes:

[0341] removing the second etch stop layer 70;

[0342] Preferably, the second etch stop layer 70 comprises photoresist;

[0343] Preferably, in the step of forming the first light-emitting functional layer 32a and the first electrode 33 of the first light-emitting unit 30a in the first isolation opening 21a and / or in the step of forming the second light-emitting functional layer 32b and the first electrode 33 of the second light-emitting unit 30b in the second isolation opening 21b, a redundant device 50 is formed on a side of at least a portion of the isolation material layer 20' facing away from the substrate 10;

[0344] The step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3 includes:

[0345] removing at least part of the redundant devices 50 in the third opening area A3;

[0346] Preferably, in the step of performing a decontamination treatment on the isolation material layer 20' in the third opening area A3, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer 20' in the third opening area A3;

[0347] Preferably, in the step of forming the second etch stop layer 70 on the side of the packaging portion 40 corresponding to the first light emitting unit 30 a and / or the second light emitting unit 30 b facing away from the substrate 10 , the second etch stop layer 70 covers part of the redundant device 50 .

[0348] In some embodiments, the step of forming the first light-emitting functional layer 32a, the first electrode 33, and the encapsulation portion 40 for encapsulating the first light-emitting unit 30a in the first isolation opening 21a includes:

[0349] A first light emitting material layer, a first electrode 33 material layer and a first encapsulation material layer are formed on the side of the isolation material layer 20 ′ facing away from the substrate 10 ;

[0350] Patterning the first light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer to form the first light-emitting functional layer 32a of the first light-emitting unit 30a, the first electrode 33, and the encapsulation portion 40 for encapsulating the first light-emitting unit 30a;

[0351] Preferably, in the step of patterning the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode 33 material layer and the first packaging material layer;

[0352] Preferably, the material of the side of the isolation material layer 20 ′ facing away from the substrate 10 includes titanium;

[0353] Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode 33 material layer, and the first packaging material layer using an etching process, the isolation material layer 20', the first light-emitting material layer, and the etching gas undergo a chemical reaction to form at least a portion of the redundant device 50;

[0354] Preferably, the step of forming the second light-emitting functional layer 32b, the first electrode 33 and the encapsulation portion 40 for encapsulating the second light-emitting unit 30b in the second isolation opening 21b includes:

[0355] A second light-emitting material layer, a first electrode 33 material layer and a first encapsulation material layer are formed on the side of the isolation material layer 20 ′ facing away from the substrate 10 ;

[0356] The second light-emitting material layer, the first electrode 33 material layer and the first encapsulation material layer are patterned to form the second light-emitting functional layer 32b of the second light-emitting unit 30b, the first electrode 33 and the encapsulation portion 40 for encapsulating the second light-emitting unit 30b;

[0357] Preferably, in the step of patterning the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode 33 material layer and the first packaging material layer;

[0358] Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode 33 material layer, and the first packaging material layer using an etching process, the isolation material layer 20', the second light-emitting material layer, and the etching gas undergo a chemical reaction to form at least a portion of the redundant device 50;

[0359] Preferably, the step of forming the third light-emitting functional layer 32c, the first electrode 33 and the encapsulation portion 40 for encapsulating the third light-emitting unit 30c in the third isolation opening 21c includes:

[0360] A third light-emitting material layer, a first electrode 33 material layer and a first encapsulation material layer are formed on the side of the isolation material layer 20 ′ facing away from the substrate 10 ;

[0361] Patterning the third light-emitting material layer, the first electrode 33 material layer, and the first encapsulation material layer to form a third light-emitting functional layer 32c of the third light-emitting unit 30c, the first electrode 33, and an encapsulation portion 40 for encapsulating the third light-emitting unit 30c;

[0362] Preferably, after the step of patterning the third light-emitting material layer, the first electrode 33 material layer and the first encapsulation material layer, the method further includes:

[0363] forming a second encapsulation layer on a side of the encapsulation portion 40 facing away from the substrate 10;

[0364] Preferably, after the step of forming a second encapsulation layer on the side of the encapsulation portion 40 facing away from the substrate 10 , the method further includes:

[0365] forming a third encapsulation layer on a side of the second encapsulation layer facing away from the substrate 10;

[0366] Preferably, the step of patterning the isolation material layer 20' to form the first isolation opening 21a in the first opening area A1 includes:

[0367] Performing patterning on the isolation material layer 20' to form a first preliminary opening K1 in the first opening area A1;

[0368] The isolation material layer 20' exposed through the first preliminary opening K1 is laterally etched to form a first isolation opening 21a. In a direction parallel to the substrate 10, a portion of the first isolation opening 21a close to the substrate 10 is protruding relative to a portion away from the substrate 10.

[0369] Preferably, the step of patterning the isolation material layer 20' to form the second isolation opening 21b in the second opening area A2 includes:

[0370] Performing patterning on the isolation material layer 20' to form a second preliminary opening K2 in the second opening area A2;

[0371] The isolation material layer 20' exposed through the second preliminary opening K2 is laterally etched to form a second isolation opening 21b. In a direction parallel to the substrate 10, a portion of the second isolation opening 21b close to the substrate 10 is protruding relative to a portion away from the substrate 10.

[0372] Preferably, the step of forming the isolation material layer 20' on one side of the substrate 10 includes:

[0373] A first sub-isolation material layer 22 ′ and a second sub-isolation material layer 23 ′ are sequentially formed on one side of the substrate 10 ;

[0374] In the step of performing side etching on the isolation material layer 20 ′ exposed through the first preliminary opening K1 to form the first isolation opening 21 a , performing side etching on the first sub-isolation material layer 22 ′ exposed through the first preliminary opening K1 to form the first isolation opening 21 a ;

[0375] Preferably, in the step of performing side etching on the isolation material layer 20' exposed through the second preliminary opening K2 to form the second isolation opening 21b, the first sub-isolation material layer 22' exposed through the second preliminary opening K2 is also performed side etching to form the second isolation opening 21b.

[0376] Preferably, the material of the first sub-isolating material layer 22 ′ includes aluminum;

[0377] Preferably, the material of the second sub-isolating material layer 23 ′ includes titanium;

[0378] Preferably, before the step of forming the isolation material layer 20' on one side of the substrate 10, the method further includes:

[0379] A pixel definition material layer 80 ′ is formed on one side of the substrate 10 ;

[0380] After patterning the isolation material layer 20' to form the first isolation opening 21a in the first opening area A1, the method further includes:

[0381] A first pixel opening 82 a is formed, and the first pixel opening 82 a is connected to the first isolation opening 21 a ;

[0382] Preferably, after patterning the isolation material layer 20' to form the second isolation opening 21b in the second opening area A2, the method further includes:

[0383] A second pixel opening 82 is formed, and the second pixel opening 82 communicates with the second isolation opening 21 b.

[0384] See also Figure 18 In a third aspect, the present application provides a display panel 100, comprising a substrate 10, an isolation structure 20, a light-emitting unit 30 and a packaging portion 40; the isolation structure 20 is arranged on one side of the substrate 10, and the isolation structure 20 encloses an isolation opening 21; at least a portion of the light-emitting unit 30 is arranged in the isolation opening 21; the packaging portion 40 is arranged on a side of the light-emitting unit 30 away from the substrate 10, a portion of the packaging portion 40 is located on a side of the isolation structure 20 away from the substrate 10, and is spaced apart from the isolation structure 20 along the thickness direction of the substrate 10 to form a accommodating space, and a redundant device 50 is provided in at least a portion of the accommodating space.

[0385] The light-emitting unit 30 may include a second electrode 31, a light-emitting functional layer 32, and a first electrode 33, which are sequentially arranged in a direction away from the substrate 10. One of the first electrode 33 and the second electrode 31 may function as an anode when energized, while the other may function as a cathode when energized. For ease of understanding, the present embodiment uses the example of the second electrode 31 functioning as an anode when energized.

[0386] Optionally, the light-emitting functional layer 32 can be formed by stacking multiple film layer structures. For example, the light-emitting unit 30 can include a stacked hole injection layer (HIL), a hole transport layer (HTL), a light-emitting layer, an electron injection layer (EIL) and an electron transport layer (ETL).

[0387] In these embodiments, the packaging portion 40 can extend from the isolation opening 21 to the side of the isolation structure 20 facing away from the substrate 10, and be spaced apart from the side of the isolation structure 20 facing away from the substrate 10 in the thickness direction of the substrate 10. The spacing area between the two is a accommodating space, and at least part of the accommodating space is provided with a redundant device 50. Therefore, the redundant device 50 can support this part of the packaging portion 40 to reduce the risk of collapse of this part of the packaging portion 40, which helps to improve the packaging performance of the packaging portion 40.

[0388] It should be noted that the redundant device 50 may be located entirely within the accommodation space, or a portion of the redundant device 50 may be located within the accommodation space while another portion may be located outside the accommodation space. In the embodiment of the present application, the redundant device 50 may be the aforementioned device formed by a chemical reaction between the light-emitting material layer, the titanium of the isolation material layer 20', and the etching gas.

[0389] The display panel 100 of the embodiment of the present application can be an organic light emitting diode (OLED) display panel 100. The display panel 100 can also be other types of display panels 100, such as a micro light emitting diode (Micro Light Emitting Diode, referred to as Micro-LED) or a quantum dot light emitting diode (Quantum Light Emitting Diode, referred to as QLED) display panel 100.

[0390] Please continue reading Figure 18Optionally, the display panel 100 further includes a pixel definition layer 80, which is disposed on the side of the isolation structure 20 facing the substrate 10. The pixel definition layer 80 may include a pixel defining portion 81 and a pixel opening 82 formed by the pixel defining portion 81. The pixel opening 82 may communicate with the isolation opening 21. The pixel opening 82 may increase the height difference of the isolation opening 21, thereby reducing the difficulty of the isolation opening 21 in isolating the light-emitting material from the first electrode 33. Furthermore, the provision of the pixel defining portion 81 may reduce color crosstalk between the light-emitting units 30, thereby improving the display quality of the display panel 100. The pixel definition layer 80 may be a single layer, a double layer, or two or more layers. The double layer or two or more layers of the pixel definition layer 80 may be made of different materials or prepared under different conditions.

[0391] In some embodiments, the redundant device 50 is disposed as a whole layer on the side of the isolation structure 20 facing away from the substrate 10 , thereby helping to improve the supporting effect of the redundant device 50 on the packaging portion 40 and further reducing the risk of collapse of the packaging portion 40 .

[0392] Please continue reading Figure 18 Preferably, the redundant device 50 includes a first sub-section 51, a second sub-section 52 and a third sub-section 53 located between the first sub-section 51 and the second sub-section 52. The first sub-section 51 and the second sub-section 52 are respectively arranged in the accommodating space of two adjacent packaging parts 40.

[0393] Specifically, the first sub-section 51 and the second sub-section 52 can be respectively arranged in the accommodating space of two adjacent packaging sections 40, and the third sub-section 53 can be located outside the accommodating space of two adjacent packaging sections 40, playing a connecting role between the first sub-section 51 and the second sub-section 52, and supporting the first sub-section 51 and the second sub-section 52, thereby reducing the risk of the first sub-section 51 and the second sub-section 52 collapsing, moving, etc. under the action of the corresponding packaging section 40, which helps to further reduce the risk of collapse, etc. of the packaging section 40.

[0394] Please continue reading Figure 18 Preferably, the isolation structure 20 includes a first isolation portion 22 and a second isolation portion 23 arranged on the side of the first isolation portion 22 facing away from the substrate 10, and the orthographic projection of the first isolation portion 22 on the substrate 10 is located within the orthographic projection of the second isolation portion 23 on the substrate 10, so that the light-emitting material and the first electrode 33 material can be separated into the light-emitting functional layer 32 and the first electrode 33 through the second isolation portion 23 without using a precision mask, which helps to reduce the production cost of the display panel 100.

[0395] Preferably, the isolation structure 20 further includes a third isolation portion, which is disposed on the side of the first isolation portion 22 facing the substrate 10, and the orthographic projection of the first isolation portion 22 on the substrate 10 is located within the orthographic projection of the third isolation portion on the substrate 10. The provision of the third isolation portion helps increase the height difference of the isolation opening 21, thereby improving its isolation effect on the light-emitting material and the first electrode 33 material.

[0396] Preferably, the light-emitting unit 30 includes a first electrode 33, which extends through the third isolation portion to overlap the first isolation portion 22. The first electrode 33 of each light-emitting unit 30 can be connected through the first isolation portion 22 to form a full-surface electrode, thereby facilitating the control of the light emission of each light-emitting unit 30.

[0397] In a fifth aspect, the present application provides a display device, including a display panel 100 manufactured using any of the above manufacturing methods, or the display panel 100 described above. Since the display device adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here.

[0398] The display device may be any device having a display function, for example, a mobile device such as a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA); it may also be a non-mobile device such as a personal computer (PC), a television (TV), an ATM, or an kiosks.

[0399] Although the embodiments disclosed in this application are as described above, the contents described are merely embodiments adopted to facilitate understanding of this application and are not intended to limit the present invention. Any person skilled in the art to which this application belongs may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in this application. However, the scope of protection of this application shall still be based on the scope defined by the appended claims.

[0400] The above description is only a specific embodiment of the present application. Those skilled in the art will clearly understand that for the convenience and brevity of description, the replacement of other connection methods described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited to this. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the scope of protection of this application.

Claims

1. A method for preparing a display panel, characterized in that: include: forming an isolation material layer on one side of the substrate, wherein the isolation material layer includes a first opening region and a second opening region; performing patterning on the isolation material layer to form a first isolation opening in the first opening region and retaining the isolation material layer in the second opening region; forming a first light-emitting functional layer and a first electrode of a first light-emitting unit in the first isolation opening; performing a decontamination process on the isolation material layer in the second opening area; performing patterning on the isolation material layer to form a second isolation opening in the second opening region; A second light-emitting functional layer and a first electrode of a second light-emitting unit are formed in the second isolation opening.

2. The preparation method according to claim 1, characterized in that Before the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes: forming a first etching stop layer on a side of the first electrode of the first light-emitting unit facing away from the substrate; After the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes: removing the first etch stop layer; Preferably, the isolation material layer further includes a third opening region, and in the step of forming the first etch stop layer on the side of the first electrode of the first light-emitting unit facing away from the substrate, the first etch stop layer also covers the isolation material layer in the third opening region; Preferably, the material of the first etch stop layer includes photoresist; Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, a redundant device is formed on at least a portion of the isolation material layer on a side facing away from the substrate; The step of performing a decontamination treatment on the isolation material layer in the second opening area includes: removing at least part of the redundant components in the second opening area; Preferably, in the step of performing a decontamination treatment on the isolation material layer in the second opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the second opening area; Preferably, in the step of forming a first etch stop layer on the side of the first electrode of the first light-emitting unit facing away from the substrate, the first etch stop layer covers a portion of the redundant device.

3. The preparation method according to claim 1, characterized in that The isolation material layer further includes a third opening region. After the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, the method further includes: performing patterning on the isolation material layer to form a third isolation opening in the third opening region; forming a third light-emitting functional layer and a first electrode of a third light-emitting unit in the third isolation opening; Preferably, before the step of patterning the isolation material layer and forming the third isolation opening in the third opening region, the method further comprises: performing a decontamination process on the isolation material layer in the third opening area; Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening and / or the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate; The step of performing a decontamination treatment on the isolation material layer in the third opening area includes: removing at least part of the redundant components in the third opening area; Preferably, in the step of performing a decontamination treatment on the isolation material layer in the third opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the third opening area.

4. The preparation method according to claim 3, characterized in that Before the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes: forming a second etching stop layer on a side of the first electrode of the first light-emitting unit and / or the second light-emitting unit facing away from the substrate; After the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes: removing the second etch stop layer; Preferably, the second etch stop layer comprises photoresist; Preferably, in the step of forming a second etch stop layer on a side of the first electrode of the first light emitting unit and / or the second light emitting unit facing away from the substrate, the second etch stop layer covers a portion of the redundant device.

5. The preparation method according to claim 3, characterized in that In the step of forming the third light-emitting functional layer and the first electrode of the third light-emitting unit in the third isolation opening, an encapsulation portion for encapsulating the third light-emitting unit is formed on a side of the first electrode of the third light-emitting unit facing away from the substrate; Preferably, the step of forming the third light-emitting functional layer and the first electrode of the third light-emitting unit in the third isolation opening includes: forming a third light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the third light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit; Preferably, after the step of patterning the third light-emitting material layer, the first electrode material layer and the first encapsulation material layer, the method further comprises: forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate; Preferably, after the step of forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate, the method further comprises: A third encapsulation layer is formed on a side of the second encapsulation layer facing away from the substrate.

6. The preparation method according to claim 2 or 3, characterized in that In the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, an encapsulation portion for encapsulating the first light-emitting unit is formed on a side of the first electrode of the first light-emitting unit facing away from the substrate; Preferably, the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening includes: forming a first light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit; Preferably, in the step of patterning the first light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer; Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium; Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the first light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device.

7. The preparation method according to claim 2 or 3, characterized in that In the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, an encapsulation portion for encapsulating the second light-emitting unit is formed on a side of the first electrode of the second light-emitting unit facing away from the substrate; Preferably, the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening includes: forming a second light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the second light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a second light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit; Preferably, in the step of patterning the second light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer; Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium; Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the second light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of a redundant device.

8. The preparation method according to any one of claims 1 to 7, characterized in that The step of patterning the isolation material layer to form a first isolation opening in the first opening region includes: performing patterning on the isolation material layer to form a first preliminary opening in the first opening region; performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, wherein a portion of the first isolation opening close to the substrate protrudes relative to a portion of the first isolation opening away from the substrate in a direction parallel to the substrate; Preferably, the step of patterning the isolation material layer to form a second isolation opening in the second opening region includes: performing patterning on the isolation material layer to form a second preliminary opening in the second opening region; performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, wherein a portion of the second isolation opening close to the substrate is protruding relative to a portion of the second isolation opening away from the substrate in a direction parallel to the substrate; Preferably, the step of forming an isolation material layer on one side of the substrate includes: forming a first sub-isolating material layer and a second sub-isolating material layer in sequence on one side of the substrate; In the step of performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, performing side etching on the first sub-isolation material layer exposed through the first preliminary opening to form the first isolation opening; Preferably, in the step of performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, the first sub-isolation material layer exposed through the second preliminary opening is performed side etching to form the second isolation opening; Preferably, the material of the first sub-isolating material layer includes aluminum; Preferably, the second sub-isolating material layer is made of titanium.

9. The preparation method according to claim 8, characterized in that Before the step of forming an isolation material layer on one side of the substrate, the method further includes: forming a pixel definition material layer on one side of the substrate; After the step of patterning the isolation material layer to form a first isolation opening in the first opening region, the method further includes: forming a first pixel opening, wherein the first pixel opening is connected to the first isolation opening; Preferably, after the step of patterning the isolation material layer to form a second isolation opening in the second opening region, the method further comprises: A second pixel opening is formed, the second pixel opening being connected to the second isolation opening.

10. A method for preparing a display panel, characterized in that: include: forming an isolation material layer on one side of the substrate, wherein the isolation material layer includes a first opening region and a second opening region; performing patterning on the isolation material layer to form a first isolation opening in the first opening region and retaining the isolation material layer in the second opening region; forming a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit in the first isolation opening; forming a first etching stop layer on a side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate; performing a decontamination process on the isolation material layer in the second opening area; performing patterning on the isolation material layer to form a second isolation opening in the second opening region; A second light-emitting functional layer of a second light-emitting unit, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit are formed in the second isolation opening.

11. The preparation method according to claim 10, characterized in that: After the step of performing a decontamination treatment on the isolation material layer in the second opening area, the method further includes: removing the first etch stop layer; Preferably, the material of the first etch stop layer includes photoresist; Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening, a redundant device is formed on at least a portion of the isolation material layer on a side facing away from the substrate; The step of performing a decontamination treatment on the isolation material layer in the second opening area includes: removing at least part of the redundant components in the second opening area; Preferably, in the step of performing a decontamination treatment on the isolation material layer in the second opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the second opening area; Preferably, in the step of forming a first etch stop layer on a side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate, the first etch stop layer covers a portion of the redundant device; Preferably, the isolation material layer further includes a third opening area, and in the step of forming the first etch stop layer on the side of the packaging portion corresponding to the first light-emitting unit facing away from the substrate, the first etch stop layer also covers the isolation material layer in the third opening area; Preferably, after the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, the method further includes: performing patterning on the isolation material layer to form a third isolation opening in the third opening region; forming a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit in the third isolation opening; Preferably, before the step of patterning the isolation material layer and forming the third isolation opening in the third opening region, the method further comprises: performing a decontamination process on the isolation material layer in the third opening area; Preferably, before the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further comprises: forming a second etching stop layer on a side of the packaging portion corresponding to the first light-emitting unit and / or the second light-emitting unit facing away from the substrate; After the step of performing a decontamination treatment on the isolation material layer in the third opening area, the method further includes: removing the second etch stop layer; Preferably, the second etch stop layer comprises photoresist; Preferably, in the step of forming the first light-emitting functional layer and the first electrode of the first light-emitting unit in the first isolation opening and / or the step of forming the second light-emitting functional layer and the first electrode of the second light-emitting unit in the second isolation opening, a redundant device is formed on a side of at least part of the isolation material layer facing away from the substrate; The step of performing a decontamination treatment on the isolation material layer in the third opening area includes: removing at least part of the redundant components in the third opening area; Preferably, in the step of performing a decontamination treatment on the isolation material layer in the third opening area, a plasma bombardment process is used to perform a decontamination treatment on the isolation material layer in the third opening area; Preferably, in the step of forming a second etch stop layer on a side of the packaging portion corresponding to the first light-emitting unit and / or the second light-emitting unit facing away from the substrate, the second etch stop layer covers a portion of the redundant device.

12. The preparation method according to claim 11, characterized in that The step of forming a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit in the first isolation opening includes: forming a first light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a first light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the first light-emitting unit; Preferably, in the step of patterning the first light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer; Preferably, the material of the side of the isolation material layer facing away from the substrate comprises titanium; Preferably, in the step of patterning at least one of the first light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the first light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device; Preferably, the step of forming a second light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit in the second isolation opening includes: forming a second light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the second light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a second light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the second light-emitting unit; Preferably, in the step of patterning the second light-emitting material layer, the first electrode material layer and the first packaging material layer, an etching process is used to pattern at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer; Preferably, in the step of patterning at least one of the second light-emitting material layer, the first electrode material layer and the first packaging material layer using an etching process, the isolation material layer, the second light-emitting material layer and the etching gas undergo a chemical reaction to form at least part of the redundant device; Preferably, the step of forming a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit in the third isolation opening includes: forming a third light-emitting material layer, a first electrode material layer and a first encapsulation material layer on a side of the isolation material layer facing away from the substrate; performing patterning on the third light-emitting material layer, the first electrode material layer, and the first encapsulation material layer to form a third light-emitting functional layer, a first electrode, and an encapsulation portion for encapsulating the third light-emitting unit; Preferably, after the step of patterning the third light-emitting material layer, the first electrode material layer and the first encapsulation material layer, the method further comprises: forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate; Preferably, after the step of forming a second encapsulation layer on a side of the encapsulation portion facing away from the substrate, the method further comprises: forming a third encapsulation layer on a side of the second encapsulation layer facing away from the substrate; Preferably, the step of patterning the isolation material layer to form a first isolation opening in the first opening region includes: performing patterning on the isolation material layer to form a first preliminary opening in the first opening region; performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, wherein a portion of the first isolation opening close to the substrate protrudes relative to a portion of the first isolation opening away from the substrate in a direction parallel to the substrate; Preferably, the step of patterning the isolation material layer to form a second isolation opening in the second opening region includes: performing patterning on the isolation material layer to form a second preliminary opening in the second opening region; performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, wherein a portion of the second isolation opening close to the substrate is protruding relative to a portion of the second isolation opening away from the substrate in a direction parallel to the substrate; Preferably, the step of forming an isolation material layer on one side of the substrate includes: forming a first sub-isolating material layer and a second sub-isolating material layer in sequence on one side of the substrate; In the step of performing side etching on the isolation material layer exposed through the first preliminary opening to form the first isolation opening, performing side etching on the first sub-isolation material layer exposed through the first preliminary opening to form the first isolation opening; Preferably, in the step of performing side etching on the isolation material layer exposed through the second preliminary opening to form the second isolation opening, the first sub-isolation material layer exposed through the second preliminary opening is performed side etching to form the second isolation opening; Preferably, the material of the first sub-isolating material layer includes aluminum; Preferably, the material of the second sub-isolating material layer includes titanium; Preferably, before the step of forming an isolation material layer on one side of the substrate, the method further comprises: forming a pixel definition material layer on one side of the substrate; After the step of patterning the isolation material layer to form a first isolation opening in the first opening region, the method further includes: forming a first pixel opening, wherein the first pixel opening is connected to the first isolation opening; Preferably, after the step of patterning the isolation material layer to form a second isolation opening in the second opening region, the method further comprises: A second pixel opening is formed, the second pixel opening being connected to the second isolation opening.

13. A display panel, characterized in that: include: substrate; An isolation structure is provided on one side of the substrate, and the isolation structure encloses an isolation opening; a light emitting unit, at least partially disposed in the isolation opening; The packaging part is arranged on the side of the light-emitting unit away from the substrate, and a part of the packaging part is located on the side of the isolation structure away from the substrate, and is spaced apart from the isolation structure along the thickness direction of the substrate to form a accommodating space, and redundant devices are provided in at least part of the accommodating space.

14. The display panel according to claim 13, wherein: The redundant components are arranged in an entire layer on a side of the isolation structure away from the substrate; Preferably, the redundant component includes a first sub-section, a second sub-section, and a third sub-section located between the first sub-section and the second sub-section, and the first sub-section and the second sub-section are respectively arranged in the accommodation space of two adjacent packaging parts; Preferably, the isolation structure includes a first isolation portion and a second isolation portion provided on a side of the first isolation portion facing away from the substrate, and the orthographic projection of the first isolation portion on the substrate is located within the orthographic projection of the second isolation portion on the substrate; Preferably, the isolation structure further comprises a third isolation portion, the third isolation portion being provided on a side of the first isolation portion facing the substrate, and an orthographic projection of the first isolation portion on the substrate being located within an orthographic projection of the third isolation portion on the substrate; Preferably, the light emitting unit includes a first electrode, and the first electrode extends through the third isolation portion to overlap with the first isolation portion.

15. A display device, characterized in that: The invention comprises a display panel prepared by the preparation method according to any one of claims 1 to 12 or a display panel according to claim 13 or 14.

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