Micro electric field sensor based on electrochemical doping effect

Abstract

The invention discloses a micro electric field sensor based on an electrochemical doping effect, and relates to the technical field of electric field measurement. The sensor comprises a substrate, an electrode, an organic semiconductor region and an electrolyte region which are sequentially arranged from bottom to top, and is used for realizing electric field measurement through ion implantation and coupling of an organic semiconductor material. The high-sensitivity sensing of an electric field is realized by injecting ions into an organic semiconductor material, the response speed and the accuracy of the sensor are improved by combining the migration characteristic of the ions and the electrochemical doping effect of an organic semiconductor, and the sensitivity and the stability are greatly improved especially under the requirements of miniaturization and low power consumption.

Description

Technical Field

[0001] The present invention relates to the technical field of electric field measurement, in particular to a micro electric field sensor based on electrochemical doping effect. Background Art

[0002] Existing miniature electric field sensors primarily operate based on capacitive, voltage-contactless detection, piezoelectric, and electro-optical principles. Capacitive electric field sensors measure electric field strength by detecting changes in capacitance under the influence of an electric field. They offer advantages such as high sensitivity and low power consumption, but are susceptible to environmental noise and have a limited measurement range. They are suitable for high-voltage power monitoring and electrostatic detection. Voltage-contactless detection sensors, based on electrostatic force or potential measurement, offer high-resolution, contactless measurement and are suitable for semiconductor device testing and electrostatic discharge monitoring. However, the equipment is complex and sensitive to environmental interference. Piezoelectric electric field sensors utilize the polarization effect or mechanical strain of materials to sense electric fields. They offer fast response and are suitable for flexible electronics, making them widely used in wearable physiological signal monitoring and smart fabrics. However, their long-term stability is limited by material properties. Electro-optical electric field sensors utilize the electro-optical effect or fiber optic sensing technology to measure electric fields. They offer strong immunity to electromagnetic interference and high-speed response, making them suitable for high-voltage power transmission systems and electromagnetic pulse detection. However, the equipment is complex and costly.

[0003] Therefore, existing electric field sensors still face challenges such as limited anti-interference ability, restricted measurement range, complex manufacturing process, and low long-term stability, which affect their performance in extreme environments and large-scale applications. Summary of the Invention

[0004] The purpose of the present invention is to provide a micro electric field sensor based on the electrochemical doping effect, which can improve the response speed and accuracy of the sensor.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] A micro electric field sensor based on electrochemical doping effect comprises: a substrate, electrodes, an organic semiconductor region and an electrolyte region arranged in sequence from bottom to top, and is used to achieve electric field measurement through ion implantation and coupling of organic semiconductor materials.

[0007] Optionally, the electrolyte region is used to inject ions into the organic semiconductor region to electrochemically dope the organic semiconductor material, and electric field measurement is achieved by establishing a mapping relationship between the external electric field and the conductivity characteristics of the organic semiconductor material.

[0008] Optionally, the substrate, the electrode, the organic semiconductor region and the electrolyte region are prepared sequentially from bottom to top using a micro-nano device processing technology.

[0009] Optionally, the material morphology and molecular stacking structure in the organic semiconductor region are set according to target ion implantation characteristics.

[0010] Optionally, the structure among the substrate, the electrode, the organic semiconductor region and the electrolyte region adopts an all-solid-state structure design or a flexible design.

[0011] Optionally, when a flexible design is adopted, the material of the substrate is polydimethylsiloxane or parylene.

[0012] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

[0013] The present invention discloses a miniature electric field sensor based on the electrochemical doping effect. The sensor comprises a substrate, electrodes, an organic semiconductor region, and an electrolyte region, arranged sequentially from bottom to top. The sensor is used to measure electric fields through ion implantation and coupling with organic semiconductor materials. By implanting ions into organic semiconductor materials, the present invention achieves highly sensitive electric field sensing. By combining the ion migration characteristics with the electrochemical doping effect of organic semiconductors, the sensor's response speed and accuracy are enhanced. This significantly improves sensitivity and stability, particularly under the requirements of miniaturization and low power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 This is a schematic diagram of the structure of a micro electric field sensor based on the electrochemical doping effect of the present invention;

[0016] Figure 2 This is a schematic diagram of the solution design process in this embodiment. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0018] The purpose of the present invention is to provide a micro electric field sensor based on the electrochemical doping effect, which can improve the response speed and accuracy of the sensor.

[0019] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0020] The future development direction will focus on improving anti-interference ability, widening the measurement range, optimizing the manufacturing process, enhancing signal processing capabilities and improving long-term stability, so as to promote the development of micro electric field sensors towards higher precision and wider applicability. Figure 1 A micro electric field sensor based on electrochemical doping effect is shown, comprising: a substrate, an electrode, an organic semiconductor region and an electrolyte region arranged in sequence from bottom to top, and is used to achieve electric field measurement through ion implantation and coupling of organic semiconductor materials.

[0021] As a specific embodiment, the following is provided: Figure 2 The design process shown.

[0022] 1. Combination of electrochemical doping effect and ion implantation

[0023] Under the influence of an external electric field, ions in the electrolyte undergo directional migration. With appropriate parameter selection and structural design, these ions will be injected into the organic semiconductor material, causing electrochemical doping and altering its conductive properties. Electric field measurement is achieved by establishing a mapping between the external electric field and the conductivity of the organic semiconductor material.

[0024] 2. Miniaturized design and integrated structure

[0025] To accommodate embedded and miniaturized applications, this patented design employs a miniaturized approach, avoiding the bulky nature of traditional electric field sensors. By employing micro-nano device fabrication techniques such as photolithography and optimizing circuit and material design, the sensor maintains high sensitivity and rapid response while significantly reducing size and weight, thereby increasing sensor integration. This miniaturized design allows for easier integration into various devices and can be fabricated into flexible devices tailored to specific application scenarios, making it particularly suitable for applications such as wearables, smart grids, and IoT sensors.

[0026] 3. Material selection and property control

[0027] Selection and optimization of polymer electrolytes and organic semiconductor materials. By regulating the sensitivity of organic semiconductor materials to electrochemical doping, sensor performance can be precisely controlled. These materials exhibit significant changes in conductivity under the influence of an external electric field. By optimizing the structure and doping level of these materials, the sensor can maintain a highly sensitive electric field response while maintaining low power consumption and miniaturization.

[0028] Because ion migration characteristics vary across different electrolyte materials, the response time and sensitivity of ions to external electric fields vary. By preparing different electrolyte materials, ion migration characteristics can be manipulated. Different organic semiconductor materials directly affect ion implantation characteristics, which in turn indirectly influence the electrochemical doping process and the material's conductive properties. Adjustments to the morphology and molecular stacking structure of organic semiconductor materials, as well as optimization of the interface between polymer electrolytes and organic semiconductors, can be made to alter ion implantation characteristics. By manipulating ion migration and implantation characteristics, electric field sensors can be developed that meet varying precision requirements.

[0029] 4. Signal detection and processing

[0030] In terms of signal detection, the intensity of the external electric field can be directly reflected by measuring the change in current across the organic semiconductor material, namely the drain and source electrodes. This measurement method does not require complex external circuitry and can operate stably under miniaturized and low-power conditions. The sensor's output signal can be directly transmitted to the integrated signal processing module. Due to the sensor's high transconductance, the obtained current signal does not require amplification processing; only simple filtering is required to accurately measure the electric field strength.

[0031] 5. Adapt to a variety of embedded application scenarios and application environments

[0032] Micro electric field sensors based on the electrochemical doping effect offer high integration and adaptability, enabling widespread application in diverse embedded applications. This technology provides stable and accurate electric field measurements for real-time monitoring of power equipment, as well as remote monitoring within smart grids and the Internet of Things.

[0033] Depending on the application scenario, the sensor can adopt a fully solid-state structure design, or it can use polydimethylsiloxane or parylene as a flexible substrate material to achieve a flexible sensor design and better embed it inside the device. In addition, the materials used in the electric field sensor in this patent are all organic materials, which have good compatibility with organic matter. Therefore, compared with other sensors made of inorganic materials, it can be better applied to the detection of electric fields inside power equipment.

[0034] Thanks to optimized materials and structural design, the micro electric field sensor maintains excellent stability and sensitivity under various environmental conditions. Therefore, the sensor can adapt to complex application scenarios, including high temperature, high humidity, low temperature, and environments with strong electromagnetic interference.

[0035] As can be seen, the design described in this embodiment avoids the limitations of traditional large-volume sensors, has a smaller size, higher integration, and more flexible application scenarios. By ion implanting organic semiconductor materials, highly sensitive electric field sensing is achieved. The combination of the ion migration characteristics and the electrochemical doping effect of organic semiconductors improves the sensor's response speed and accuracy, greatly improving sensitivity and stability, especially under the requirements of miniaturization and low power consumption.

[0036] Therefore, the present invention has the following beneficial effects:

[0037] Aiming at multiple application scenarios such as smart grids and new energy internet, the present invention proposes a new measurement principle and structure for a micro electric field sensor based on the electrochemical doping effect, and utilizes photolithography and other preparation processes to prepare it into an embedded micro electric field sensor with development potential. The present invention can be designed into a flexible or rigid, liquid or all-solid electric field sensor with a small volume, low driving voltage, and low power consumption according to the application scenario, promoting the realization of internal electric field monitoring of power equipment and providing equipment status information. This design can improve the response speed and accuracy of the sensor, especially under the requirements of miniaturization and low power consumption, greatly improving the sensitivity and stability, avoiding the limitations of traditional large-volume sensors, with a smaller size and higher integration, and more flexible application scenarios.

[0038] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0039] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A micro electric field sensor based on electrochemical doping effect, characterized in that: include: The substrate, electrode, organic semiconductor region and electrolyte region are arranged in sequence from bottom to top, and are used to realize electric field measurement through ion implantation and coupling of organic semiconductor materials.

2. The micro electric field sensor based on electrochemical doping effect according to claim 1, characterized in that: The electrolyte region is used to inject ions into the organic semiconductor region to electrochemically dope the organic semiconductor material, and electric field measurement is achieved by establishing a mapping relationship between the external electric field and the electrical conductivity characteristics of the organic semiconductor material.

3. The micro electric field sensor based on electrochemical doping effect according to claim 1, characterized in that: The substrate, the electrode, the organic semiconductor region and the electrolyte region are prepared sequentially from bottom to top using a micro-nano device processing technology.

4. The micro electric field sensor based on electrochemical doping effect according to claim 1, characterized in that: The material morphology and molecular stacking structure in the organic semiconductor region are set according to target ion implantation characteristics.

5. The micro electric field sensor based on electrochemical doping effect according to claim 1, characterized in that: The structure among the substrate, the electrode, the organic semiconductor region and the electrolyte region adopts an all-solid-state structure design or a flexible design.

6. The micro electric field sensor based on electrochemical doping effect according to claim 5, characterized in that: When a flexible design is adopted, the material of the substrate is polydimethylsiloxane or parylene.

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