Accurate positioning method and system for processing of chip-type multilayer alternating ceramic dielectric capacitor

Abstract

The invention relates to the technical field of electronic component manufacturing, and discloses an accurate positioning method and system for chip multilayer alternating ceramic dielectric capacitor processing, and the method comprises the steps: carrying out the dynamic positioning calculation through comprehensively obtaining the material characteristic data, the process environment data and the process real-time state data, so as to determine the dynamic positioning reference parameters. On the basis of the reference parameter, performing correction compensation calculation to obtain an electrode pattern position compensation parameter, and performing dynamic adjustment according to the electrode pattern position compensation parameter to obtain a preliminary electrode pattern coordinate; then, error calculation is carried out on the initial coordinates, and coordinate error values are obtained; when the error value is lower than a preset error threshold value, the initial electrode pattern coordinates are directly output as accurate coordinates; and if the error value exceeds a preset error threshold value, carrying out optimization adjustment by adopting a particle swarm optimization algorithm to enable the coordinate to approach the target position, and outputting an accurate electrode pattern coordinate until the precision requirement is met. According to the method, dynamic real-time accurate positioning can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic component manufacturing, and in particular to a precise positioning method and system for processing chip-type multilayer ceramic capacitors. Background Art

[0002] Multilayer ceramic capacitors (MLCCs) are key passive components in modern electronic products, widely used in communications equipment, computers, automotive electronics, and medical devices. MLCCs play a vital role in high-performance electronic circuits due to their high capacitance density, low equivalent series resistance (ESR), and excellent frequency characteristics. The MLCC manufacturing process encompasses several key steps, including ceramic slurry preparation, coating, lamination, sintering, metallization, and terminal plating.

[0003] Currently, the MLCC production process involves multiple high-precision processing steps, such as printing electrode patterns, interlayer alignment, lamination, and sintering. However, due to changes in the physical properties of the substrate material during different process steps (such as thermal expansion and mechanical stress release), the substrate will undergo significant deformation during processing. Traditional positioning methods mainly rely on static mechanical references (such as alignment marks or physical fixtures) for positioning adjustments, but these methods cannot fully compensate for non-uniform deformation caused by factors such as temperature gradients and stress changes.

[0004] Existing MLCC processing and positioning technologies rely on static alignment methods, which are unable to dynamically compensate for substrate deformation in real time. For high-layer, large-scale substrates, traditional methods struggle to adapt to dynamic offsets during processing. This is particularly true during the sintering stage, where thermal expansion and contraction of the substrate cause deformation, leading to electrode pattern shifts. Static alignment methods are unable to effectively eliminate these errors. Summary of the Invention

[0005] The present invention provides a precise positioning method and system for processing chip-type multilayer ceramic capacitors, so as to achieve dynamic real-time precise positioning.

[0006] In the first aspect, in order to solve the above technical problems, the present invention provides a precise positioning method for processing a chip-type multilayer ceramic capacitor, comprising: Obtain material property data, process environment data and real-time process status data; Performing dynamic positioning calculations based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; Performing correction and compensation calculations based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters; Based on the electrode pattern position compensation parameters, dynamic adjustment is performed to obtain preliminary electrode pattern coordinates; performing error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; When the coordinate error value is less than a preset error threshold, outputting the preliminary electrode pattern coordinates as precise electrode pattern coordinates; When the coordinate error value is greater than or equal to a preset error threshold, the particle swarm optimization algorithm is used to optimize and compensate the preliminary electrode pattern coordinates to obtain accurate electrode pattern coordinates.

[0007] Preferably, the material characteristic data include: thermal expansion coefficient, mechanical stress distribution and elastic modulus; The process environment data includes: temperature gradient, applied pressure, original coordinates of the electrode pattern and initial reference position; The real-time process status data includes: processing vibration value, electrode pattern offset and stacking misalignment.

[0008] Preferably, performing dynamic positioning calculation based on the material characteristic data, the process environment data and the process real-time status data to obtain dynamic positioning reference parameters includes: The deformation of the substrate is calculated using the following formula: in, is the deformation of the substrate, is the original length of the substrate, is the coefficient of thermal expansion, is the temperature gradient, is the mechanical stress distribution, is the elastic modulus; The substrate process deformation is calculated using the following formula: in, is the substrate process deformation, For the pressure applied, is the influence coefficient, is the original design coordinate of the electrode pattern, is the initial reference position; The dynamic machining stability is calculated by the following formula: in, is the dynamic processing stability value, is the machining vibration value, is the electrode pattern offset, is the stacking misalignment, 、 and is the weight coefficient; The dynamic positioning reference parameters include: substrate deformation, substrate process deformation and dynamic processing stability.

[0009] Preferably, performing correction compensation calculation based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters includes: The compensation amount in the X direction is calculated using the following formula: in, is the compensation amount in the X direction, is the correction coefficient in the X direction, is the deformation of the substrate in the X direction, is the substrate deformation in the X direction, is the dynamic processing stability value, To dynamically adjust parameters, is the nonlinear adjustment parameter; The compensation amount in the Y direction is calculated using the following formula: in, is the compensation amount in the Y direction, is the Y direction correction coefficient, is the deformation of the substrate in the Y direction, is the process deformation of the substrate in the Y direction; The electrode pattern position compensation parameters include: compensation amount in the X direction and compensation amount in the Y direction.

[0010] Preferably, the dynamic adjustment based on the electrode pattern position compensation parameter to obtain preliminary electrode pattern coordinates includes: Performing a reference offset correction on the electrode pattern position compensation parameter to obtain an adjustment amount of the electrode pattern coordinates; Based on the electrode pattern coordinate adjustment amount, the electrode pattern position is recalculated to obtain preliminary electrode pattern coordinates.

[0011] Preferably, performing error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value includes: The coordinate error value is calculated using the following formula: in, is the coordinate error value, is the X coordinate of the preliminary electrode pattern, Preliminary electrode pattern Y coordinate, is the X coordinate of the target position, is the Y coordinate of the target position.

[0012] Preferably, when the coordinate error value is greater than or equal to a preset error threshold, a particle swarm optimization algorithm is used to optimize and compensate the preliminary electrode pattern coordinates to obtain accurate electrode pattern coordinates, including: Performing error compensation on the preliminary electrode pattern coordinates based on a particle swarm optimization algorithm to obtain an optimized adjustment amount; Based on the optimization adjustment amount, updating the electrode pattern coordinates to obtain optimized electrode pattern coordinates; When the optimized electrode pattern coordinates are smaller than the error threshold, the precise electrode pattern coordinates are output.

[0013] In a second aspect, the present invention provides a precise positioning system for chip-type multilayer ceramic capacitor processing, comprising: Data acquisition module, used to obtain material characteristic data, process environment data and process real-time status data; A dynamic positioning module, configured to perform dynamic positioning calculations based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; A position compensation module, configured to perform correction compensation calculations based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters; A dynamic adjustment module, configured to perform dynamic adjustment based on the electrode pattern position compensation parameters to obtain preliminary electrode pattern coordinates; An error calculation module is used to perform error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; a coordinate output module, configured to output the preliminary electrode pattern coordinates as precise electrode pattern coordinates when the coordinate error value is less than a preset error threshold; The particle swarm optimization algorithm module uses the particle swarm optimization algorithm to optimize and compensate the preliminary electrode pattern coordinates when the coordinate error value is greater than or equal to a preset error threshold to obtain accurate electrode pattern coordinates.

[0014] In a third aspect, the present invention also provides an electronic device comprising a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein when the processor executes the computer program, the method for precisely positioning the chip-type multilayer ceramic capacitor processing described in any one of the above is implemented.

[0015] In a fourth aspect, the present invention also provides a computer-readable storage medium, which includes a stored computer program, wherein when the computer program is running, the device where the computer-readable storage medium is located is controlled to execute any one of the above-mentioned methods for precise positioning of chip-type multilayer ceramic capacitor processing.

[0016] Compared with the prior art, the present invention has the following beneficial effects: (1) The present invention obtains material property data, process environment data and real-time process status data, establishes dynamic positioning reference parameters, and can calculate the deformation of the substrate under different process conditions in real time, and dynamically adjust the position of the electrode pattern, thereby avoiding error accumulation caused by factors such as thermal expansion and pressure changes, and improving the alignment accuracy of the electrode pattern.

[0017] (2) The present invention adopts a correction and compensation calculation method based on dynamic positioning reference parameters to calculate the compensation amounts in the X and Y directions respectively, and makes corrections in combination with dynamic processing stability. Through a nonlinear adjustment strategy, the deformation of the electrode pattern in different directions is specifically compensated, ensuring the accuracy of the compensation calculation, improving the alignment accuracy of the electrode pattern, enhancing product consistency, and reducing processing errors.

[0018] (3) The present invention achieves error quantification by calculating the error between the preliminary electrode pattern coordinates and the target design position. When the error exceeds a preset error threshold, the particle swarm optimization algorithm is used to optimize and adjust the preliminary electrode pattern coordinates, iteratively optimize the error compensation value, and gradually approach the target design position. Compared with traditional static alignment methods, the present invention, combined with the particle swarm optimization algorithm, can automatically correct processing deviations, improve the final alignment accuracy of the electrode pattern, and enhance the yield and stability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of a precise positioning method for processing a chip-type multilayer ceramic capacitor provided by a first embodiment of the present invention; Figure 2 Schematic diagram of a precise positioning system for processing chip-type multilayer ceramic capacitors provided by a second embodiment of the present invention. DETAILED DESCRIPTION

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0021] Reference Figure 1 The first embodiment of the present invention provides a precise positioning method for processing a chip-type multilayer ceramic capacitor, comprising the following steps: S11, acquiring material property data, process environment data and process real-time status data; S12, performing dynamic positioning calculation based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; S13, performing correction compensation calculation according to the dynamic positioning reference parameter to obtain electrode pattern position compensation parameters; S14, performing dynamic adjustment based on the electrode pattern position compensation parameter to obtain preliminary electrode pattern coordinates; S15, performing error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; S16, when the coordinate error value is less than a preset error threshold, outputting the preliminary electrode pattern coordinates as precise electrode pattern coordinates; S17, when the coordinate error value is greater than or equal to a preset error threshold, a particle swarm optimization algorithm is used to optimize and compensate the preliminary electrode pattern coordinates to obtain accurate electrode pattern coordinates.

[0022] In step S11, the material characteristic data includes: thermal expansion coefficient, mechanical stress distribution and elastic modulus; The process environment data includes: temperature gradient, applied pressure, original coordinates of the electrode pattern and initial reference position; The real-time process status data includes: processing vibration value, electrode pattern offset and stacking misalignment.

[0023] It is worth noting that in step S11, material property data must first be acquired to ensure that the deformation of the substrate can be accurately calculated during the processing of the multilayer ceramic capacitor, providing a basis for subsequent dynamic positioning compensation. Material property data mainly includes the thermal expansion coefficient, mechanical stress distribution, and elastic modulus. The acquisition of this data requires the use of precise measurement methods to ensure data accuracy and reliability.

[0024] The thermal expansion coefficient is obtained by measuring it using a thermomechanical analyzer (TMA). The substrate material of the chip-type multilayer ceramic capacitor is selected, cut into samples of standard size, and placed on the sample stage of the thermomechanical analyzer. Under different temperature conditions, the expansion of the sample is measured by the thermomechanical analyzer, the dimensional change of the substrate within the set temperature range is recorded, and the thermal expansion coefficient is calculated. The thermal expansion coefficient is a temperature-related parameter. Therefore, during the measurement process, conditions such as the temperature change range, heating rate, and constant temperature holding time need to be strictly controlled to ensure the accuracy of the experimental data. For different batches of substrate materials, multiple measurements are required, and the average value is taken as the final thermal expansion coefficient to eliminate the influence of differences between batches.

[0025] The mechanical stress distribution is obtained by using a strain gauge test method combined with finite element analysis for calculation. First, strain gauges are arranged on the surface of the substrate and connected to a data acquisition system. By applying different external forces to the substrate, the resistance change of the strain gauge is measured, and the mechanical stress distribution of the substrate at different process stages is calculated. In order to obtain comprehensive stress distribution data, it is necessary to measure multiple key areas of the substrate, such as the edge area, the center area, the stacking interface area, etc. At the same time, in order to improve the accuracy of the data, the finite element analysis method can be combined to establish a stress distribution model of the substrate based on the experimental data, and perform numerical simulation calculations on it to predict the stress changes under different process parameters.

[0026] Elastic modulus can be measured using either a tensile test or a bending test. In a tensile test, a material testing machine applies a tensile load to a standard-sized substrate sample. The strain change in the sample is measured to calculate the elastic modulus. A bending test applies a bending load to the substrate, measures the change in deflection, and calculates the elastic modulus using material mechanics formulas. During the experiment, it is necessary to ensure that the substrate loading method meets the actual process conditions, and to average the results after multiple experiments to obtain stable elastic modulus data.

[0027] In addition to acquiring material property data, further process environment data needs to be collected to ensure accurate modeling and calculation of substrate deformation under different process conditions. Process environment data includes temperature gradients, applied pressure, the original coordinates of the electrode pattern, and the initial reference position.

[0028] Temperature gradients are acquired using infrared thermal imagers or thermocouple measurements. During the production process, multiple thermocouple sensors can be placed in different areas of the substrate, and a data acquisition system can record the temperature distribution at different stages. Substrate temperature fluctuations are particularly significant during sintering and lamination processes, necessitating real-time monitoring of temperature gradients. Infrared thermal imagers can provide a two-dimensional distribution map of the substrate surface temperature, visually reflecting the substrate's temperature distribution and facilitating analysis of the impact of temperature gradients on substrate deformation.

[0029] Applied pressure data is measured using pressure sensors. During the lamination and stacking processes, pressure sensors can be installed on the equipment's pressure-applying devices to record changes in applied pressure in real time. Acquiring applied pressure data requires considering pressure variations at different stages of the process. In particular, during lamination, the varying number of layers and material properties can affect pressure distribution. Therefore, when collecting data, it's necessary to conduct multiple measurements under typical process conditions and adjust the applied pressure based on process requirements to ensure reliable experimental data.

[0030] The acquisition of the original coordinates and initial reference position of the electrode pattern relies on a high-precision visual measurement system. After substrate manufacturing is completed, a high-resolution industrial camera or laser measurement equipment is used to capture images of the electrode pattern, and image processing algorithms are used to extract the coordinate information of the electrode pattern. To improve measurement accuracy, it is necessary to set calibration points on the substrate surface and combine computer vision technology for coordinate calibration. The setting of the initial reference position requires the integration of the equipment's alignment system. By measuring multiple reference points, the initial position of the substrate in the processing equipment is calculated to ensure the accuracy of the substrate's position during subsequent processes.

[0031] In addition to material property data and process environment data, real-time process status data is also required to enable real-time adjustment and compensation for substrate deformation during processing. This real-time process status data includes processing vibration values, electrode pattern offset, and stack misalignment.

[0032] Machining vibration is measured using accelerometers or laser vibrometers. High-precision accelerometers are installed on the machining equipment, and a data acquisition system records the vibration during machining. To obtain accurate data, the vibration signal is filtered to remove high-frequency noise, and spectrum analysis is used to analyze the primary frequency components of the vibration. This machining vibration data can be used to assess equipment stability and provide data support for subsequent dynamic compensation.

[0033] Electrode pattern offset is measured using a high-precision visual inspection system. During the machining process, real-time image acquisition compares the actual electrode pattern position with the set reference position to calculate the offset. To ensure measurement accuracy, a sub-pixel edge detection algorithm is employed, combined with multi-frame image overlay to improve measurement stability. Machine learning algorithms can also be used to analyze measurement data, identify anomalies during machining, and dynamically adjust the process.

[0034] Lamination misalignment is measured using interferometry or optical 3D measurement techniques. After lamination is complete, a white-light interferometer or laser scanner can be used to measure the 3D topography of the laminated substrate and calculate the misalignment between the different layers. This misalignment data can be used to assess lamination quality and provide input for subsequent compensation calculations.

[0035] By acquiring the aforementioned material property data, process environment data, and real-time process status data, complete data support can be provided for subsequent precise positioning. This data acquisition method is based on existing measurement technology and combined with high-precision data acquisition and analysis methods to ensure data accuracy and feasibility, providing a foundation for dynamic compensation and optimization during the processing of chip multilayer ceramic capacitors.

[0036] In step S12, dynamic positioning calculation is performed based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters, including: The deformation of the substrate is calculated using the following formula: in, is the deformation of the substrate, is the original length of the substrate, is the coefficient of thermal expansion, is the temperature gradient, is the mechanical stress distribution, is the elastic modulus; The substrate process deformation is calculated using the following formula: in, is the substrate process deformation, For the pressure applied, is the influence coefficient, is the original design coordinate of the electrode pattern, is the initial reference position; The dynamic machining stability is calculated by the following formula: in, is the dynamic processing stability value, is the machining vibration value, is the electrode pattern offset, is the stacking misalignment, 、 and is the weight coefficient; It is worth noting that during the processing of chip-type multilayer ceramic capacitors, the dimensional change of the substrate has a significant impact on the precise positioning of the electrode pattern. Therefore, it is necessary to accurately measure the dimensional change of the substrate and correct it in combination with real-time process data to obtain accurate dynamic positioning reference parameters. The original length of the substrate is a key parameter and needs to be accurately obtained before processing to ensure the accuracy of subsequent calculations. After the substrate is produced, it needs to be dimensionally inspected to determine its length at room temperature. To this end, high-precision measuring equipment, such as a laser rangefinder, can be used to measure the length of the substrate. Before measurement, the substrate should be placed on a stable platform to avoid the influence of external vibration on the measurement accuracy. In addition, the measurement environment temperature needs to be kept within a stable range to prevent the thermal expansion of the material caused by temperature changes from affecting the measurement results. After the measurement is completed, the data is stored in the database and used as an input parameter in subsequent dynamic positioning calculations to ensure the accuracy of the positioning calculation.

[0037] When calculating substrate process deformation, the selection of the influence coefficient is crucial for accuracy. The influence coefficient is used to correct for substrate deformation caused by external forces during the process. Choosing the right coefficient can improve calculation accuracy. During experiments, the appropriate influence coefficient was selected by comparing measurement data under different process conditions. The influence coefficient value was adjusted based on actual production conditions. For this calculation, an influence coefficient of 0.8 was selected. This value was based on force testing of different batches of substrates and recording deformation under different process parameters. Data showed that when the influence coefficient value was between 0.75 and 0.85, the error between the calculated results and the actual measured data was minimal. Further analysis revealed that when the influence coefficient value was 0.8, the error between the calculated substrate process deformation and the measured data was minimized, with an average error within 0.3 microns. Therefore, selecting this value effectively reflects substrate deformation at different process stages, thereby improving the accuracy of dynamic positioning calculations.

[0038] During dynamic machining stability calculations, the selection of weight coefficients influences the accuracy and reliability of the final results. Weight coefficients adjust the proportional influence of machining vibration, electrode pattern offset, and stack misalignment on the stability calculation. Proper weight coefficient settings ensure the model maintains good adaptability under varying process conditions. The three weight coefficients used in this calculation were 0.5, 0.3, and 0.2, respectively. These values were selected based on error regression to ensure the accuracy of the stability calculations.

[0039] Among the weighting factors, the primary consideration is the impact of machining vibration on stability. Machining vibration significantly affects final positioning accuracy, especially under high-frequency machining conditions, where the error variation caused by vibration is more pronounced. Therefore, a higher weight should be assigned to machining vibration to highlight its influence in the calculation. Experimental data shows that when the machining vibration weighting factor is between 0.4 and 0.6, the calculated results closely match the actual error data. A weighting value of 0.5 was selected for this calculation, which effectively balances the impact of machining vibration on the overall stability calculation while avoiding weakening the influence of other parameters due to excessively high weighting. During experimental verification, when the weighting factor was higher than 0.6, the calculated results were overly sensitive to machining vibration, resulting in a decrease in the stability of the calculation model. However, when the weighting factor was lower than 0.4, the impact of machining vibration was underestimated, resulting in a decrease in calculation accuracy. Therefore, a weighting value of 0.5 was selected as the machining vibration weighting factor to ensure that the calculation model can accurately predict stability parameters under different machining conditions.

[0040] The influence weight of the electrode pattern offset needs to be analyzed in combination with experimental data. In the experiment, by measuring the electrode pattern offset at different process stages, it was found that its influence on the final positioning accuracy is second only to the processing vibration, but it still has a large influence. Therefore, the weight of this parameter needs to be adjusted appropriately to ensure that the calculation model can effectively reflect the influence of the electrode pattern offset. In this calculation, the weight coefficient of this parameter was selected as 0.3. During the experiment, when the weight value was 0.2, the calculation model was less sensitive to the offset, resulting in the calculation results being unable to fully reflect the influence of the offset; when the weight value was 0.4, the calculation model was too dependent on the offset, which weakened the influence of the calculation results on other parameters and reduced the overall calculation accuracy. Through experimental verification, 0.3 was finally selected as the weight value of the offset to ensure that the calculation model can maintain reasonable adaptability under different process conditions.

[0041] The influence weight of the stacking misalignment is smaller than that of the first two parameters, but it still needs to be considered in the calculation. During the experiment, by analyzing the stacking misalignment data under different process parameters, it was found that its influence on the final positioning accuracy was lower than the processing vibration and electrode pattern offset. Therefore, the weight value of this parameter needs to be appropriately reduced to prevent excessive influence on the calculation results. In this calculation, the weight value of this parameter was selected as 0.2. Experimental data show that when the weight value is lower than 0.15, the calculation model is not sensitive enough to the stacking misalignment, resulting in a large deviation in the calculation results; when the weight value is higher than 0.25, the calculation model is overly sensitive to the influence of the stacking misalignment, which reduces the stability of the calculation results. Therefore, 0.2 was finally selected as the weight value of the stacking misalignment to ensure that the calculation model can accurately reflect its influence under different process conditions and maintain the stability of the calculation results.

[0042] In summary, during the dynamic positioning calculation process, the original length of the substrate is obtained using high-precision measurement equipment and used as an input parameter in subsequent calculations. The influence coefficient is selected as 0.8 to effectively correct the effects of process deformation. The weight coefficients are selected as 0.5, 0.3, and 0.2, respectively. These values are selected through data regression analysis to ensure the accuracy and adaptability of dynamic processing stability calculations. Ultimately, these calculation results are used to construct dynamic positioning reference parameters, providing reliable data support for subsequent electrode pattern position compensation, thereby improving the processing accuracy and product quality of chip-type multilayer ceramic capacitors.

[0043] In step S13, a correction compensation calculation is performed based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters, including: The compensation amount in the X direction is calculated using the following formula: in, is the compensation amount in the X direction, is the correction coefficient in the X direction, is the deformation of the substrate in the X direction, is the substrate deformation in the X direction, is the dynamic processing stability value, To dynamically adjust parameters, is the nonlinear adjustment parameter; The compensation amount in the Y direction is calculated using the following formula: in, is the compensation amount in the Y direction, is the Y direction correction coefficient, is the deformation of the substrate in the Y direction, is the process deformation of the substrate in the Y direction; The electrode pattern position compensation parameters include: compensation amount in the X direction and compensation amount in the Y direction.

[0044] It is worth noting that in the manufacturing process of chip multilayer ceramic capacitors, due to the influence of various process factors, the substrate will inevitably deform during the processing. These deformations come from thermal expansion, the effect of applied pressure, and the influence of vibration during the equipment processing. In the dynamic positioning process, accurately calculating the compensation amount in the X and Y directions is the key link to ensure the precise positioning of the electrode pattern. In order to achieve this goal, it is necessary to calculate the substrate deformation and process deformation based on material property data, process environment data, and real-time process status data, and combine dynamic processing stability with reasonable correction parameters for compensation calculation to ensure that the final electrode pattern position meets the design requirements.

[0045] When calculating the compensation in the X and Y directions, the overall substrate deformation must first be decomposed into the X and Y axes. Substrate deformation is primarily affected by thermal expansion, the direction of which depends on the distribution of the temperature gradient. Temperature variations are relatively uniform along the substrate's long axis, while variations along the short axis are smaller. Therefore, the substrate's primary expansion direction is generally along its long axis. In actual processing, temperature distribution monitoring of multiple samples revealed that the substrate's thermal expansion direction is at an angle of 30° with the long axis. For example, on a 120 mm × 80 mm substrate, a total deformation of 280 μm is measured. Decomposing the deformation according to this angle yields a calculated X-direction deformation of approximately 280 × cos(30°) ≈ 242 μm, while the Y-direction deformation is approximately 280 × sin(30°) ≈ 140 μm. Thus, through geometric calculations, the substrate deformation can be rationally decomposed into the X and Y directions, ensuring the accuracy of the compensation calculation.

[0046] Process deformation primarily results from applied pressure. During the MLCC lamination process, pressure is applied perpendicular to the substrate. However, due to equipment precision limitations, the actual direction of pressure can deviate from the ideal state. Experimental measurements of lamination pressure revealed a deviation of approximately 5° between its primary direction and the substrate's long axis. This deviation stems from the way the equipment fixture secures the substrate and the varying compression ratios of different materials during the lamination process. In one experiment, the total process deformation of the substrate caused by applied pressure was 210 μm. Decomposing this at a 5° angle, the X-direction deformation is approximately 210 × cos(5°) ≈ 209 μm, while the Y-direction deformation is approximately 210 × sin(5°) ≈ 18 μm. Finite element simulation analysis is also used to ensure that compensation calculations are consistent with the actual operating conditions of the equipment.

[0047] In the compensation calculation, in addition to the decomposition of substrate deformation and process deformation, correction coefficients and adjustment parameters also need to be considered. and Y direction correction factor It is mainly used to adjust the amplitude of compensation calculation to adapt to the influence of deformation in different directions. Experimental data shows that the error in the X direction needs to be reduced by about 15% during the compensation process, while the error in the Y direction needs to be reduced by about 10% to prevent over-compensation from causing additional errors. Therefore, it is set = 0.85, = 0.90 to ensure that the compensation calculation maintains high accuracy after correction. In the 300 μm level of error correction, an 85% correction ratio can effectively reduce overcompensation and ensure that the final error is maintained within ±5 μm.

[0048] Dynamically adjust parameters The role of the compensation is to calculate the dynamic processing stability Make adjustments. It is determined by the processing vibration, electrode pattern offset and stacking misalignment. The influence of these factors varies under different process conditions, so it is necessary to To adjust its contribution ratio in the compensation calculation. Experimental data show that when When 0.75 is selected, the stability of compensation calculation can be maintained under most process conditions and error fluctuation can be reduced. The selection of this value is based on the analysis of multiple batch processing data. = 0.75, the error fluctuation range is the smallest and the average error is reduced by about 15%. Therefore, adopting this value can ensure the stability and reliability of the calculation.

[0049] Nonlinear adjustment parameters It is mainly used to correct the nonlinear effect of dynamic processing stability on the compensation amount. The influence of processing vibration and stacking misalignment does not change linearly, but has a small impact in small deviations and a significant increase in large deviations. Therefore, nonlinear adjustment parameters are introduced in the compensation calculation. , to enhance the correction capability in the case of large errors while avoiding over-adjustment in the case of small errors. Experimental data shows that when ζ is 0.65 (m / rad), the adaptability of the compensation calculation is the best, and the stability after error correction is improved by 12%. This value is based on the statistical analysis of the error distribution. The adjustment effect is best within the error range of ±10μm, so it is selected. = 0.65 (m / rad) is used as a nonlinear adjustment parameter to ensure that the compensation calculation can obtain stable results under various process conditions.

[0050] Throughout the compensation calculation process, the aforementioned parameter settings ultimately yield X- and Y-direction compensation values that accurately correct for substrate deformation, ensuring that the electrode pattern's position aligns with the design objective. This calculation method, incorporating material properties, process environment, and real-time status data, makes the compensation calculation applicable not only to static environments but also to dynamically changing process conditions, improving stability and consistency during MLCC manufacturing.

[0051] In step S14, dynamic adjustment is performed based on the electrode pattern position compensation parameters to obtain preliminary electrode pattern coordinates, including: Performing a reference offset correction on the electrode pattern position compensation parameter to obtain an adjustment amount of the electrode pattern coordinates; Based on the electrode pattern coordinate adjustment amount, the electrode pattern position is recalculated to obtain preliminary electrode pattern coordinates.

[0052] It is worth noting that in the processing of chip multilayer ceramic capacitors, the precise positioning of the electrode pattern is an important factor affecting the performance of the final product. Due to factors such as thermal expansion, applied pressure, and processing vibration involved in the manufacturing process, the electrode pattern will be offset during processing. In order to correct these offsets and ensure that the electrode pattern can be accurately aligned with the design target, the calculated electrode pattern position compensation parameters need to be subjected to a baseline offset correction to obtain a coordinate adjustment amount that is more in line with the actual processing situation. The core of this step is to further correct the compensation amounts in the X and Y directions calculated in the previous step so that it can adapt to the current process environment more accurately.

[0053] The primary basis for benchmark offset correction is the equipment's positioning reference point and the known reference coordinate system used during machining. In practice, the machining equipment's reference coordinate system deviates slightly from the theoretical coordinate system in the design drawing, so directly applying the calculated compensation can result in additional errors. Therefore, before performing compensation, the machining equipment's reference coordinate system must be calibrated to ensure it aligns as closely as possible with the theoretical coordinate system. This calibration process is accomplished using the equipment's own high-precision alignment system, such as a visual recognition system or laser rangefinder, to obtain the exact coordinates of the reference points within the equipment's actual working area. The compensation parameters of the electrode pattern are then adjusted accordingly, allowing it to be positioned relative to the equipment's true reference.

[0054] After completing the reference offset correction, the final coordinate adjustment for the electrode pattern can be calculated. This adjustment is based on the compensation parameters and incorporates the slight errors in the equipment during the machining process. Because the compensation parameters are based on theoretical calculations, and slight errors can still accumulate during actual machining, further optimization of the compensation results through correction steps is required to ensure the final positioning accuracy of the electrode pattern.

[0055] After obtaining the electrode pattern coordinate adjustment amount, it is necessary to apply the adjustment amount to the design coordinates of the current electrode pattern to perform a correction calculation of the actual position, thereby obtaining the preliminary electrode pattern coordinates. Specifically, the recalculation process is to form a new coordinate value by weighting and superimposing the compensation amounts in the X and Y directions to the original design coordinates. In order to ensure the calculation accuracy, the adjustment amount needs to be aligned with the coordinate units that the device can actually recognize to avoid coordinate drift due to precision mismatch or carry error during the numerical conversion process.

[0056] This series of correction and calculation steps ensures a high degree of accuracy in the initial positioning of the electrode pattern, providing a reliable data foundation for subsequent error calculations and further optimization. This method combines theoretical calculations, equipment benchmark corrections, and historical processing data analysis to adapt the compensation process to different process conditions, improving electrode pattern alignment accuracy and production consistency.

[0057] In step S15, the preliminary electrode pattern coordinates are subjected to error calculation to obtain a coordinate error value, including: The coordinate error value is calculated using the following formula: in, is the coordinate error value, is the X coordinate of the preliminary electrode pattern, Preliminary electrode pattern Y coordinate, is the X coordinate of the target position, is the Y coordinate of the target position.

[0058] It is worth noting that in the processing of chip-type multilayer ceramic capacitors, the precise positioning of the electrode pattern plays a decisive role in the electrical performance and reliability of the final product. Since the manufacturing process involves multiple key processes, including printing, lamination, cutting and sintering, each process will introduce a certain degree of error. In order to ensure that the electrode pattern is accurately aligned with the predetermined position in the final product, it is necessary to introduce a target position as a comparison reference, and evaluate the deviation of the current electrode pattern coordinates relative to the target position through error calculation. The core of this error calculation step is to use mathematical methods to quantify the degree of deviation of the electrode pattern, thereby providing a basis for subsequent optimization and adjustment.

[0059] The target position refers to the ideal electrode pattern coordinates set during the design phase, that is, the position where the electrode pattern should be placed without any processing errors. This target position is derived from the calibrated coordinates in the capacitor design drawing and represents the geometric layout of the product under ideal conditions. In the actual production process, the processing equipment will print and stack the pattern based on these theoretical coordinates. However, due to the influence of factors such as temperature changes and mechanical stress on the substrate, the actual position of the electrode pattern will deviate from the target position. Therefore, during the manufacturing process, it is necessary to compare the deviation between the actual coordinates of the current electrode pattern and the target coordinates to determine whether further compensation adjustments are required.

[0060] The main purpose of error calculation is to quantify the degree of this deviation and to obtain the numerical value of the deviation through precise calculation methods. In this process, it is necessary to obtain the preliminary coordinates of the electrode pattern under the current process conditions and compare them with the target position. Since the offset of the electrode pattern occurs in different directions, it is necessary to consider the errors in the X and Y directions at the same time and calculate their combined error. The error calculation is based on the spatial distance between the preliminary coordinates of the electrode pattern and the coordinates of the target position, which can intuitively reflect the degree of offset of the electrode pattern. The calculation result will be used as input for subsequent optimization steps. When the error value exceeds the preset error threshold, the system will trigger a further adjustment process to ensure that the final electrode pattern accuracy meets the design requirements.

[0061] The target position is introduced to provide a measurable standard, enabling precise assessment and dynamic adjustment of electrode pattern deviations during machining. Without a target position as a benchmark, error calculations lose their reference standard, making it difficult to effectively determine whether pattern deviations under current process conditions are within the allowable range. Therefore, determining the target position is a prerequisite for error calculations. It ensures that the entire machining process can be precisely numerically controlled, ensuring that the final electrode pattern meets design requirements and improving product consistency and stability.

[0062] In step S16, when the coordinate error value is less than a preset error threshold, the preliminary electrode pattern coordinates are output as precise electrode pattern coordinates; It is worth noting that in the manufacturing process of chip multilayer ceramic capacitors, the precise positioning of the electrode pattern is crucial to ensuring the electrical performance of the final product. Since the substrate undergoes high-temperature sintering, machining, pressure application, etc. during the process, deformation caused by thermal expansion and mechanical stress will occur, which will eventually cause the position of the electrode pattern to shift. Therefore, after dynamic adjustment, it is necessary to calculate the coordinate error of the electrode pattern and determine whether it meets the set error threshold. If the error value is within the allowable range, it can be considered that the electrode pattern coordinates have reached the precise positioning standard, and then the final precise coordinate value is output to ensure the stability and consistency of the manufacturing process.

[0063] The setting of the error threshold needs to be based on the requirements of the processing accuracy, equipment measurement capabilities and the final application scenario. Since the error value describes the Euclidean distance between the target coordinates of the electrode pattern and the adjusted coordinates, it is suitable to be measured using normalized units or relative errors. For example, the error threshold can be set to a dimensionless value of 0.001 to 0.005, which represents the ratio of the degree of coordinate offset to the overall size of the electrode pattern. Such a setting can be applied to chip capacitor products of different specifications without the need for separate adjustments for electrode patterns of different sizes, thereby improving versatility and adaptability.

[0064] The setting of the error threshold also needs to be considered in conjunction with the actual processing capabilities of the production equipment. In high-precision production equipment, such as those using laser measurement and visual recognition technologies, the measurement accuracy can reach a dimensionless value of 0.0001. Therefore, the error threshold can be set to 0.001 to ensure product consistency. In traditional processing equipment, however, measurement error and control accuracy are relatively low. To accommodate process fluctuations, the threshold can be appropriately relaxed to 0.005 to ensure production stability while avoiding the frequent adjustments and increased calculations caused by overly strict error standards, which can affect production efficiency.

[0065] In addition, the setting of the error threshold should take into account the computational efficiency of the compensation mechanism. If the error value is lower than the preset error threshold, the current coordinates can be directly output as the final precise electrode pattern coordinates, which means that the system does not need to additionally calculate the compensation amount, reducing the use of computing resources and improving the operating efficiency of the production line. If the error value exceeds the threshold, it is necessary to enter the compensation optimization stage and further adjust the coordinates to ensure that the final positioning accuracy meets the requirements. This setting not only ensures the quality of the final product, but also optimizes the production process, reduces unnecessary adjustments, and improves overall manufacturing efficiency.

[0066] In step S17, when the coordinate error value is greater than or equal to the preset error threshold, the preliminary electrode pattern coordinates are optimized and compensated using a particle swarm optimization algorithm to obtain accurate electrode pattern coordinates, including: Performing error compensation on the preliminary electrode pattern coordinates based on a particle swarm optimization algorithm to obtain an optimized adjustment amount; Based on the optimization adjustment amount, updating the electrode pattern coordinates to obtain optimized electrode pattern coordinates; When the optimized electrode pattern coordinates are smaller than the error threshold, the precise electrode pattern coordinates are output.

[0067] It is worth noting that in the manufacturing process of chip-type multilayer ceramic capacitors, in order to ensure the final positioning accuracy of the electrode pattern, optimization compensation is required when the error exceeds the error threshold. To achieve this goal, a particle swarm optimization algorithm is introduced to compensate the error of the preliminary electrode pattern coordinates so that they converge to the target design coordinates, and finally obtain accurate electrode pattern coordinates that meet the error requirements. The implementation of this step involves error calculation, determination of optimization adjustment amount, and updating of coordinates to ensure that the final position of the electrode pattern meets the design requirements of the product, improving production accuracy and product consistency.

[0068] The use of the particle swarm optimization algorithm is based on its advantages in searching for the global optimal solution. The algorithm simulates the movement of particles within the search space, aiming for the global optimal solution and adjusting the particle position and velocity so that the initial electrode pattern coordinates continuously approach the target design coordinates. In this step, the initial particle swarm is composed of multiple possible electrode pattern coordinates, with each particle representing a possible compensation solution. The algorithm determines whether optimization is necessary by calculating the error value of the current coordinates. When the error exceeds a set threshold, the particle swarm optimization algorithm takes effect, adjusting the coordinates based on the current search state and calculating the optimization adjustment amount, so that the coordinates gradually approach the optimal position.

[0069] The calculation process for optimizing the adjustment requires consideration of multiple factors, including the electrode pattern's initial positioning coordinates, the target design coordinates, and the current error value. When calculating the adjustment, a balance must be struck between the magnitude of the adjustment and the speed of convergence. Avoiding excessive adjustments that could cause coordinate oscillation, while also preventing adjustments that are too small from impacting optimization efficiency. Through iterative calculations, each particle continuously updates its position, gradually approaching the optimal solution. During this process, the algorithm dynamically adjusts the search range and step size to accommodate electrode patterns with varying precision requirements, improving the convergence speed and stability of the optimization process.

[0070] Once the optimization adjustment is calculated, the system updates the electrode pattern coordinates based on the adjustment. The updated coordinates undergo a new error calculation and are compared with a threshold. If the error in the optimized coordinates still exceeds the threshold, the optimization continues iteratively until the error meets the specified requirements. This process can be controlled by setting a maximum number of iterations or a convergence condition to prevent the algorithm from entering an invalid loop, improving computational efficiency and practical feasibility.

[0071] After the optimization process is complete, when the final optimized electrode pattern coordinates meet the error threshold requirements, the system outputs these coordinates as the precise electrode pattern coordinates. At this point, the electrode pattern position has been optimized and compensated, and its error is controlled within the allowable range, meeting subsequent process requirements. By adopting the particle swarm optimization algorithm, the limitations of traditional static compensation methods in complex process environments can be effectively overcome, improving the accuracy and efficiency of dynamic adjustment, making the positioning of the electrode pattern more precise, and ultimately improving the manufacturing quality and consistency of chip multilayer ceramic capacitors.

[0072] In the manufacturing process of chip multilayer ceramic capacitors, the substrate material will undergo thermal expansion and mechanical deformation under different process conditions, affecting the precise alignment of the electrode pattern. Therefore, dynamic compensation and optimization methods are required to ensure positioning accuracy. Figure 1 (Method flow chart) and Figure 2 (System module diagram), the present invention obtains material property data, process environment data and real-time process status data to perform dynamic positioning calculation, error compensation and optimization adjustment to ensure the final precise alignment of the electrode pattern.

[0073] In step S11, the system first acquires material property data, process environment data, and real-time process status data. This data forms the basis for subsequent calculations and adjustments. Material property data includes physical parameters such as the substrate's thermal expansion coefficient, mechanical stress distribution, and elastic modulus. Process environment data covers temperature gradients, applied pressure, the electrode pattern's original coordinates, and initial reference position. Real-time process status data includes vibration during processing, electrode pattern offset, and stacking misalignment. This data is collected in real time by the data acquisition module, ensuring that subsequent calculations can be adjusted based on the actual conditions of the current production environment.

[0074] In step S12, the system uses the dynamic positioning module to calculate the collected data to determine dynamic positioning reference parameters. This calculation process involves predicting the dimensional changes of the substrate at different temperatures and establishing a mathematical model of substrate deformation based on factors such as thermal expansion coefficient, temperature gradient, and mechanical stress. The system also analyzes the impact of applied pressure on substrate deformation and evaluates the system's dynamic stability based on processing vibration data. This generates dynamic positioning reference parameters appropriate for the current process environment, providing an accurate reference for subsequent compensation calculations.

[0075] In step S13, the system enters the position compensation module, calculates the offset of the electrode pattern, and performs compensation calculations. During this process, the system calculates the compensation amount for the electrode pattern in the X and Y directions based on the dynamic positioning reference parameters. It then optimizes the compensation parameters based on dynamic processing stability to ensure the accuracy of the compensation calculations. The core goal of this process is to correct for deformation of the substrate caused by thermal expansion, mechanical stress, and process pressure, so that the electrode pattern is as close to the target position as possible after adjustment.

[0076] In step S14, the system uses the dynamic adjustment module to adjust the electrode pattern coordinates. The calculated compensation is then applied to the electrode pattern position adjustment, and the system recalculates and obtains preliminary electrode pattern coordinates. This adjustment process ensures that the electrode pattern position has been initially corrected based on the compensation calculated in the previous step, providing preliminary data for subsequent error calculations.

[0077] In step S15, the system enters the error calculation module to perform error calculation on the preliminary electrode pattern coordinates. This calculation compares the target electrode pattern coordinates with the initially adjusted coordinates and calculates the error values in the X and Y directions. If the error values are small, it indicates that the current adjustment results are close to the final target. If the error values are still large, further optimization calculations are required to ensure that the final processing accuracy meets the requirements.

[0078] In step S16, if the error calculation results indicate that the coordinate error value is less than the preset error threshold, the system enters the coordinate output module and directly outputs the preliminary electrode pattern coordinates as the final precise coordinates. At this point, the electrode pattern alignment accuracy meets the process requirements and no additional optimization adjustment is required. The system can transmit this coordinate data to the subsequent lamination or printing process to ensure manufacturing accuracy.

[0079] In step S17, if the error calculation results indicate that the coordinate error value is still greater than the preset error threshold, the system enters the particle swarm optimization module and uses the particle swarm optimization algorithm to further optimize and adjust the preliminary electrode pattern coordinates. Based on swarm intelligence optimization methods, the particle swarm optimization algorithm continuously updates the optimal position of the particle swarm and calculates the optimal compensation adjustment, gradually bringing the electrode pattern coordinates closer to the target position. After multiple iterations of optimization, the electrode pattern coordinates that meet the accuracy requirements are finally obtained and output to the production system, ensuring accurate electrode pattern alignment.

[0080] Through the above steps, the present invention provides a dynamic real-time compensation and optimization precise positioning method, which enables the chip multilayer ceramic capacitor to effectively deal with the influencing factors such as material expansion, applied pressure and process vibration during the manufacturing process. Figure 2The system modules shown in the figure rely on data acquisition, dynamic calculation, error compensation, optimization and adjustment, etc., so that the electrode pattern can still maintain high-precision alignment under complex process conditions, thereby improving product quality and manufacturing stability.

[0081] Reference Figure 2 The second embodiment of the present invention provides a precise positioning system for processing chip-type multilayer ceramic capacitors, comprising: Data acquisition module, used to obtain material characteristic data, process environment data and process real-time status data; A dynamic positioning module, configured to perform dynamic positioning calculations based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; A position compensation module, configured to perform correction compensation calculations based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters; A dynamic adjustment module, configured to perform dynamic adjustment based on the electrode pattern position compensation parameters to obtain preliminary electrode pattern coordinates; An error calculation module is used to perform error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; a coordinate output module, configured to output the preliminary electrode pattern coordinates as precise electrode pattern coordinates when the coordinate error value is less than a preset error threshold; The particle swarm optimization algorithm module uses the particle swarm optimization algorithm to optimize and compensate the preliminary electrode pattern coordinates when the coordinate error value is greater than or equal to a preset error threshold to obtain accurate electrode pattern coordinates.

[0082] It should be noted that the precise positioning system for processing a chip-type multilayer inter-ceramic capacitor provided in an embodiment of the present invention is used to execute all the process steps of the precise positioning method for processing a chip-type multilayer inter-ceramic capacitor in the above embodiment. The working principles and beneficial effects of the two correspond one to one, so they will not be repeated here.

[0083] An embodiment of the present invention further provides an electronic device. The electronic device includes: a processor, a memory, and a computer program stored in the memory and executable on the processor, such as a program for precisely positioning chip-type multilayer inter-ceramic capacitors. When the processor executes the computer program, the steps of the aforementioned precise positioning method for processing chip-type multilayer inter-ceramic capacitors are implemented, such as Figure 1 Alternatively, when the processor executes the computer program, the functions of the modules / units in the above-mentioned device embodiments are realized, such as the particle swarm optimization algorithm module.

[0084] Exemplarily, the computer program may be divided into one or more modules / units, which are stored in the memory and executed by the processor to implement the present invention. The one or more modules / units may be a series of computer program instruction segments capable of implementing specific functions, and the instruction segments are used to describe the execution process of the computer program in the electronic device.

[0085] The electronic device may be a computing device such as a desktop computer, notebook, PDA, or smart tablet. The electronic device may include, but is not limited to, a processor and memory. Those skilled in the art will appreciate that the aforementioned components are merely examples of electronic devices and do not constitute a limitation of the electronic device. The electronic device may include more or fewer components than those described above, or a combination of certain components, or different components. For example, the electronic device may also include input / output devices, network access devices, buses, and the like.

[0086] The processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor. The processor is the control center of the electronic device and connects various parts of the entire electronic device using various interfaces and lines.

[0087] The memory can be used to store the computer programs and / or modules. The processor implements the various functions of the electronic device by running or executing the computer programs and / or modules stored in the memory and accessing the data stored in the memory. The memory may primarily include a program storage area and a data storage area. The program storage area may store an operating system and at least one application required for a function (such as a sound playback function or an image playback function); the data storage area may store data generated based on the use of the mobile phone (such as audio data, a phone book, etc.). Furthermore, the memory may include high-speed random access memory and non-volatile memory, such as a hard disk, internal memory, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, at least one disk storage device, a flash memory device, or other volatile solid-state storage device.

[0088] If the module / unit integrated into the electronic device is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present invention can implement all or part of the process steps in the above-mentioned method embodiments by using a computer program to instruct the relevant hardware. The computer program can be stored in a computer-readable storage medium. When executed by a processor, the computer program can implement the steps of each of the above-mentioned method embodiments. The computer program includes computer program code, which can be in source code form, object code form, executable file, or some intermediate form. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard drive, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal, and software distribution medium. It should be noted that the content of the computer-readable medium can be appropriately increased or decreased based on the requirements of legislation and patent practice in a jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media does not include electric carrier signals and telecommunication signals.

[0089] It should be noted that the device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed across multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the present embodiment. In addition, in the drawings of the device embodiments provided by the present invention, the connection relationship between the modules indicates that there is a communication connection between them, which may be specifically implemented as one or more communication buses or signal lines. A person of ordinary skill in the art can understand and implement the present invention without inventive effort.

[0090] The specific embodiments described above further illustrate the objectives, technical solutions, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the scope of protection of the present invention. In particular, it should be noted that any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included within the scope of protection of the present invention for those skilled in the art.

Claims

1. A precise positioning method for processing chip-type multilayer ceramic capacitors, characterized in that: include: Obtain material property data, process environment data and real-time process status data; Performing dynamic positioning calculations based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; Performing correction and compensation calculations based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters; Based on the electrode pattern position compensation parameters, dynamic adjustment is performed to obtain preliminary electrode pattern coordinates; performing error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; When the coordinate error value is less than a preset error threshold, outputting the preliminary electrode pattern coordinates as precise electrode pattern coordinates; When the coordinate error value is greater than or equal to the error threshold, the preliminary electrode pattern coordinates are optimized and compensated using a particle swarm optimization algorithm to obtain accurate electrode pattern coordinates.

2. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 1, characterized in that: The material characteristic data include: thermal expansion coefficient, mechanical stress distribution and elastic modulus; The process environment data includes: temperature gradient, applied pressure, original coordinates of the electrode pattern and initial reference position; The real-time process status data includes: processing vibration value, electrode pattern offset and stacking misalignment.

3. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 2, characterized in that: The performing of dynamic positioning calculation according to the material characteristic data, the process environment data and the process real-time status data to obtain dynamic positioning reference parameters includes: The deformation of the substrate is calculated using the following formula: in, is the deformation of the substrate, is the original length of the substrate, is the coefficient of thermal expansion, is the temperature gradient, is the mechanical stress distribution, is the elastic modulus; The substrate process deformation is calculated using the following formula: in, is the substrate process deformation, For the pressure applied, is the influence coefficient, is the original design coordinate of the electrode pattern, is the initial reference position; The dynamic machining stability is calculated by the following formula: in, is the dynamic processing stability value, is the machining vibration value, is the electrode pattern offset, is the stacking misalignment, 、 and is the weight coefficient; The dynamic positioning reference parameters include: substrate deformation, substrate process deformation and dynamic processing stability.

4. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 1, characterized in that: The step of performing correction and compensation calculation based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters includes: The compensation amount in the X direction is calculated using the following formula: in, is the compensation amount in the X direction, is the correction coefficient in the X direction, is the deformation of the substrate in the X direction, is the substrate deformation in the X direction, is the dynamic processing stability value, To dynamically adjust parameters, is the nonlinear adjustment parameter; The compensation amount in the Y direction is calculated using the following formula: in, is the compensation amount in the Y direction, is the Y direction correction coefficient, is the deformation of the substrate in the Y direction, is the process deformation of the substrate in the Y direction; The electrode pattern position compensation parameters include: compensation amount in the X direction and compensation amount in the Y direction.

5. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 1, characterized in that: The dynamically adjusting the electrode pattern position compensation parameters to obtain preliminary electrode pattern coordinates includes: Performing a reference offset correction on the electrode pattern position compensation parameter to obtain an adjustment amount of the electrode pattern coordinates; Based on the electrode pattern coordinate adjustment amount, the electrode pattern position is recalculated to obtain preliminary electrode pattern coordinates.

6. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 1, characterized in that: The performing error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value includes: The coordinate error value is calculated using the following formula: in, is the coordinate error value, is the X coordinate of the preliminary electrode pattern, Preliminary electrode pattern Y coordinate, is the X coordinate of the target position, is the Y coordinate of the target position.

7. The precise positioning method for processing a chip-type multilayer ceramic capacitor according to claim 1, characterized in that: When the coordinate error value is greater than or equal to the preset error threshold, the particle swarm optimization algorithm is used to optimize and compensate the preliminary electrode pattern coordinates to obtain accurate electrode pattern coordinates, including: Performing error compensation on the preliminary electrode pattern coordinates based on a particle swarm optimization algorithm to obtain an optimized adjustment amount; Based on the optimization adjustment amount, updating the electrode pattern coordinates to obtain optimized electrode pattern coordinates; When the optimized electrode pattern coordinates are less than a preset error threshold, the precise electrode pattern coordinates are output.

8. A precise positioning system for chip-type multilayer ceramic capacitor processing, characterized in that: include: Data acquisition module, used to obtain material characteristic data, process environment data and process real-time status data; A dynamic positioning module, configured to perform dynamic positioning calculations based on the material characteristic data, the process environment data, and the process real-time status data to obtain dynamic positioning reference parameters; A position compensation module, configured to perform correction compensation calculations based on the dynamic positioning reference parameters to obtain electrode pattern position compensation parameters; A dynamic adjustment module, configured to perform dynamic adjustment based on the electrode pattern position compensation parameters to obtain preliminary electrode pattern coordinates; An error calculation module is used to perform error calculation on the preliminary electrode pattern coordinates to obtain a coordinate error value; a coordinate output module, configured to output the preliminary electrode pattern coordinates as precise electrode pattern coordinates when the coordinate error value is less than a preset error threshold; The particle swarm optimization algorithm module is used to optimize and compensate the preliminary electrode pattern coordinates using the particle swarm optimization algorithm when the coordinate error value is greater than or equal to a preset error threshold to obtain accurate electrode pattern coordinates.

9. An electronic device, characterized in that: The invention comprises a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, wherein when the processor executes the computer program, the method for accurately positioning the chip multilayer ceramic capacitor processing according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a stored computer program, wherein when the computer program is executed, the device where the computer-readable storage medium is located is controlled to execute the precise positioning method for processing a chip-type multilayer ceramic capacitor according to any one of claims 1 to 7.

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