Semiconductor packaging piece, heat dissipation structure forming method and heat dissipation management system

Abstract

The embodiment of the invention discloses a semiconductor packaging piece, a heat dissipation structure forming method and a heat dissipation management system, and relates to the technical field of semiconductor packaging heat dissipation. The semiconductor packaging piece comprises a chip stacking body and a heat dissipation liquid cooling flow channel, the chip stacking body comprises a first stacking body and a second stacking body which are stacked, and the first stacking body and the second stacking body are in bonding connection through respective bonding layers; the heat dissipation liquid cooling flow channel is formed on a bonding layer on the first stacking body and / or the second stacking body, is arranged in the direction parallel to the bonding layer and is located in a non-functional area on the first stacking body and / or the second stacking body. The method is suitable for a semiconductor packaging scene.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor package heat dissipation technology, and in particular to a semiconductor package, a heat dissipation structure forming method, and a heat dissipation management system. Background Art

[0002] With the advancement of technology, chips are becoming increasingly miniaturized and integrated. Semiconductor packages can effectively achieve miniaturization and high density by stacking multiple layers of chips vertically. However, as the number of stacked chips within a semiconductor package increases, the internal heat flux density also increases. Typically, heat generated by multiple layers of chips must pass through adjacent chips to reach the heat sink, effectively dissipating the heat. Chip temperature is a major factor in chip reliability, making it particularly important to address the heat dissipation issues within semiconductor packages.

[0003] Current technologies typically incorporate high-heat dissipation coefficient materials or structures into the chip's silicon substrate, then transfer heat to a heat sink through vertical heat dissipation channels to dissipate heat from the chip. This results in low heat dissipation efficiency, a large number of chips in the vertical direction, and a relatively long vertical heat dissipation distance. Furthermore, vertical heat dissipation can also lead to thermal coupling, further compromising cooling effectiveness. Summary of the Invention

[0004] In view of this, embodiments of the present invention provide a semiconductor package, a method for forming a heat dissipation structure, and a heat dissipation management system to improve the heat dissipation effect of the semiconductor package.

[0005] To achieve the above objectives, the embodiments of the present invention adopt the following technical solutions: In a first aspect, an embodiment of the present invention provides a semiconductor package, comprising: a chip stack, comprising a stacked first stack and a second stack, the first stack and the second stack being bonded to each other via respective bonding layers; a heat dissipation liquid cooling channel, formed on a bonding layer on the first stack and / or the second stack, arranged in a direction parallel to the bonding layer, and located in a non-functional area on the first stack and / or the second stack.

[0006] According to an implementation manner of the embodiment of the present invention, the first stacked body is a crystal die or a wafer, and the second stacked body is a crystal die or a wafer.

[0007] According to an implementation method of an embodiment of the present invention, the heat dissipation liquid cooling channel is a groove formed in the bonding layer on the first stacked body; or, the heat dissipation liquid cooling channel is a groove formed in the bonding layer on the second stacked body.

[0008] According to one possible implementation of an embodiment of the present invention, the heat dissipation liquid cooling channel is extended in the bonding layer of the first stack and passes through at least one side of the bonding layer of the first stack; and / or the heat dissipation liquid cooling channel is extended in the bonding layer of the second stack and passes through at least one side of the bonding layer of the second stack.

[0009] According to an implementation method of an embodiment of the present invention, the heat dissipation liquid cooling flow channel includes a plurality of heat dissipation liquid cooling flow channels, and the plurality of heat dissipation liquid cooling flow channels are connected to form a liquid cooling flow channel network.

[0010] According to an implementation method of the embodiment of the present invention, a heat conduction through hole is provided on the first stack body, one end of the heat conduction through hole is adjacent to and not connected to the heat dissipation liquid cooling channel, and the heat conduction through hole is filled with a heat conduction medium material.

[0011] According to one implementation method of an embodiment of the present invention, the heat dissipation liquid cooling channel is formed on a bonding layer on the first stack; a heat transfer metal layer is provided in the second stack, and the heat transfer metal layer is adjacent to and not connected to the heat dissipation liquid cooling channel.

[0012] According to one implementable method of an embodiment of the present invention, the heat transfer metal layer includes at least two metal layers, and the at least two metal layers are connected by heat dissipation vias; the first metal layer of the at least two metal layers is arranged adjacent to the power consumption device in the second stack and is not connected, and the second metal layer of the at least two metal layers is arranged adjacent to the heat dissipation liquid cooling channel and is not connected.

[0013] In a second aspect, an embodiment of the present invention provides a method for forming a heat dissipation structure of a semiconductor package, the method comprising: constructing a heat dissipation liquid cooling channel on a bonding layer on a first stacking body and / or a second stacking body; bonding the first stacking body and the second stacking body together using a hybrid bonding process to form a semiconductor package; wherein the heat dissipation liquid cooling channel is parallel to the bonding layer and is located in a non-functional area on the first stacking body and / or the second stacking body.

[0014] According to an implementation method of an embodiment of the present invention, the bonding layer on the first stack and / or the second stack constructs a heat dissipation liquid cooling channel, including: in the bonding layer area of the first stack and in the non-functional area located on the first stack and / or the second stack, a groove is manufactured by an etching process, and the groove extends in a direction parallel to the bonding layer and passes through at least one side of the bonding layer; and / or in the bonding layer area of the second stack and in the non-functional area located on the first stack and / or the second stack, a groove is manufactured by an etching process, and the groove extends in a direction parallel to the bonding layer and passes through at least one side of the bonding layer.

[0015] According to an implementable embodiment of the present invention, the method for forming a heat dissipation structure of a semiconductor package further includes: forming a heat conduction through-hole in the first stack body, and filling the heat conduction through-hole with a heat conduction medium material, so that after the first stack body and the second stack body are bonded together, one end of the heat conduction through-hole is arranged adjacent to the heat dissipation liquid cooling channel and is not connected.

[0016] According to an implementable manner of an embodiment of the present invention, the method for forming a heat dissipation structure of a semiconductor package further includes: forming a heat transfer metal layer in the second stacked body, so that after the first stacked body and the second stacked body are bonded together, the heat transfer metal layer is arranged adjacent to and not connected to the heat dissipation liquid cooling channel.

[0017] In a third aspect, an embodiment of the present invention provides a semiconductor package heat dissipation management system, comprising: a chip temperature measurement module, a liquid flow pump, a controller and the semiconductor package described in any implementation of the first aspect; the chip temperature measurement module is arranged inside the semiconductor package, and is used to detect the operating temperature of the first stack and / or the second stack; the liquid flow pump is connected to the heat dissipation liquid cooling channel of the semiconductor package; the controller is connected to the chip temperature measurement module and the liquid flow pump, and is used to adjust the flow rate of the liquid flow pump to control the liquid flow rate in the heat dissipation liquid cooling channel according to the operating temperature of the first stack and / or the second stack detected by the chip temperature measurement module.

[0018] The semiconductor package and heat dissipation structure formation method and heat dissipation management system provided by the embodiments of the present invention are configured by setting a heat dissipation liquid cooling channel on the bonding layer on the first stack body and / or the second stack body. The heat dissipation liquid cooling channel is arranged in a non-functional area parallel to the bonding layer and located on the first stack body and / or the second stack body, and can serve as a flow channel for the heat dissipation liquid in the heat dissipation liquid cooling channel. In this way, without affecting the bonding connection between the first stack body and the second stack body, the heat generated by the first stack body and the second stack body during operation can be transferred out of the semiconductor package by heat exchange through the heat dissipation liquid in the heat dissipation liquid cooling channel, thereby improving the heat dissipation effect of the semiconductor package. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1This is a schematic structural diagram of a semiconductor package according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the manufacturing process of a heat dissipation liquid cooling channel according to an embodiment of the present invention; Figure 3 A schematic diagram of the position of the heat dissipation liquid cooling channel in another embodiment of the present invention; Figure 4 This is a schematic diagram of the position of the heat dissipation liquid cooling channel in another embodiment of the present invention; Figure 5 A top view of the heat dissipation liquid cooling channel in one embodiment of the present invention; Figure 6 A schematic diagram of a semiconductor package heat dissipation management system according to an embodiment of the present invention; Figure 7 A schematic diagram of the locations of heat conduction through holes in one embodiment of the present invention; Figure 8 The present invention provides a schematic flow chart of a method for forming a heat dissipation structure of a semiconductor package according to an embodiment of the present invention. DETAILED DESCRIPTION

[0021] The following describes embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without inventive effort are intended to fall within the scope of protection of the present invention.

[0022] An embodiment of the present invention provides a semiconductor package, including a chip stack, in which a heat dissipation liquid cooling channel is provided for the flow of heat dissipation liquid. The heat generated by the chip stack during operation can be brought out of the semiconductor package through the flow of the heat dissipation liquid in the heat dissipation liquid cooling channel, thereby improving the heat dissipation effect of the semiconductor package.

[0023] Figure 1 This is a schematic diagram of the structure of a semiconductor package according to an embodiment of the present invention. Figure 1An embodiment of the present invention provides a semiconductor package 1, comprising: a chip stack 2 and a heat dissipation liquid cooling channel 3; wherein the chip stack 2 comprises a first stack 21 and a second stack 22, and the first stack 21 and the second stack 22 are bonded to each other via respective bonding layers; the heat dissipation liquid cooling channel 3 is formed on a bonding layer 211 on the first stack 21, is arranged in a direction parallel to the bonding layer 211, and is located in a non-functional area on the first stack and / or the second stack that does not affect the normal function of the original semiconductor package; before being bonded, the first stack 21 and the second stack 22 each have a connection layer structure for bonding connection, referred to as a bonding layer; the connection structure formed after the first stack 21 and the second stack 22 are bonded via their respective bonding layers is a hybrid bonding process layer HB (Hybrid Bonding).

[0024] There may be one, two, three, four, or more heat dissipation and cooling channels in the first stack 21. Each heat dissipation and cooling channel may be a straight channel or a serpentine curved channel.

[0025] The semiconductor package provided by an embodiment of the present invention is provided with a heat dissipation liquid cooling channel 3 on the bonding layer 211 on the first stack body 21. The heat dissipation liquid cooling channel 3 is provided in a non-functional area parallel to the bonding layer and located on the first stack body 21. The heat dissipation liquid cooling channel 3 can serve as a flow channel for the heat dissipation liquid. In this way, without affecting the bonding connection between the first stack body 21 and the second stack body 22, the heat generated during the operation of the first stack body 21 and the second stack body 22 can be transferred out of the semiconductor package 1 by heat exchange through the heat dissipation liquid in the heat dissipation liquid cooling channel 3, thereby improving the heat dissipation effect of the semiconductor package 1.

[0026] In the above embodiment, the heat dissipation liquid cooling channel 3 is formed in the bonding layer 211 on the first stack 21. The present invention is not limited to this embodiment. In another embodiment, the heat dissipation liquid cooling channel 3 is formed in the bonding layer on the second stack 22. Forming the heat dissipation liquid cooling channel 3 in the upper stack (the second stack) not only facilitates direct heat exchange with the heat generated during operation of the upper stack, but also facilitates heat exchange with the heat generated during operation of the lower stack (the first stack).

[0027] Figure 2 This is a schematic diagram of the manufacturing process of the heat dissipation liquid cooling channel according to the embodiment of the present invention. Figure 2 In another embodiment, the heat dissipation liquid cooling channel 3 includes both a lower heat dissipation liquid cooling channel 31 formed in the bonding layer on the first stacking body 21 and an upper heat dissipation liquid cooling channel 32 formed in the bonding layer on the second stacking body 22.

[0028] Figure 3This is a schematic diagram of the position of the heat dissipation liquid cooling channel in another embodiment of the present invention, see Figure 3 The number of lower-layer heat dissipation liquid-cooling flow channels 31 can be multiple, and the number of upper-layer heat dissipation liquid-cooling flow channels 32 can also be multiple. In one example, the first lower-layer heat dissipation liquid-cooling flow channel 311 among the multiple lower-layer heat dissipation liquid-cooling flow channels is vertically opposite and connected to the first upper-layer heat dissipation liquid-cooling flow channel 321 among the multiple upper-layer heat dissipation liquid-cooling flow channels. This increases the flow rate of the heat dissipation liquid therein, thereby enhancing the heat dissipation effect.

[0029] Figure 4 This is a schematic diagram of the position of the heat dissipation liquid cooling channel in another embodiment of the present invention, see Figure 4 In another example, the first lower-layer heat dissipation liquid-cooling channel 311 among the multiple lower-layer heat dissipation liquid-cooling channels and the first upper-layer heat dissipation liquid-cooling channel 321 among the multiple upper-layer heat dissipation liquid-cooling channels are partially corresponding to and connected to each other in the upper and lower parts. This can increase the circulation volume of the heat dissipation liquid and increase the absorption of heat generated by the first stack and the second stack during operation, thereby further enhancing the heat dissipation effect.

[0030] The heat dissipation and cooling channel 3 is formed in the bonding layer on the first stack 21 and / or the second stack 22, and is located in a non-functional area on the first stack 21 and / or the second stack 22 outside the bonding points 212, so as not to affect the bonded connection between the first stack 21 and the second stack 22. In some embodiments, the bonding points 212 can be arranged along the side of the heat dissipation and cooling channel and along the direction of the heat dissipation and cooling channel. In this way, the bonding points 212 not only serve to bond the first stack 21 and the second stack 22, but also provide a certain sealing effect on the side of the heat dissipation and cooling channel after the bonded connection.

[0031] In some embodiments, in order to improve the sealing effect of the side of the heat dissipation liquid cooling channel 3, a sealing material (not shown in the figure) can be arranged on the side of the heat dissipation liquid cooling channel 3 along the direction of the heat dissipation liquid cooling channel. In addition to having sealing properties, the sealing material can also have thermal conductivity.

[0032] In some embodiments, the first stack 21 is a die (also called a die) or a wafer, and the second stack 22 is a die or a wafer. Thus, in some examples, a stack of dies can be formed; in other examples, a stack of dies can be formed; and in still other examples, a stack of wafers can be formed.

[0033] The first stacking body 21 and the second stacking body 22 are bonded and stacked by a hybrid bonding process to form a three-dimensional stacking structure. In addition to the face-to-back stacking method, other stacking methods such as face-to-face stacking method may also be included.

[0034] The heat dissipation liquid cooling channel 3 in the above embodiments may be a groove formed by an etching process during the wafer manufacturing stage.

[0035] In some embodiments, the heat dissipation liquid-cooling channel 3 is a groove formed in the bonding layer 211 on the first stack 21. The blank area of the bonding layer 211 is usually silicon nitride oxide. The groove can be made in the bonding layer 211 using an etching process. After the first stack 21 and the second stack 22 are bonded, the heat dissipation liquid-cooling channel 3 is formed. The second stack 22 is located above the first stack 21. After the first stack 21 and the second stack 22 are bonded, the lower surface of the second stack 22 seals the upper opening of the groove in the bonding layer 211 on the first stack 21, thereby forming a heat dissipation liquid-cooling channel 3 in the chip stack 2; the heat dissipation liquid-cooling channel 3 can also be a groove formed in the bonding layer on the second stack 22. At this time, the first stack 21 is located above the second stack 22. After the first stack 21 and the second stack 22 are bonded, the lower surface of the first stack 21 seals the upper opening of the groove in the bonding layer on the second stack 22, thereby forming a heat dissipation liquid-cooling channel 3 in the chip stack 2.

[0036] In some embodiments, other stacked bodies may be stacked on the second stacked body 22 , and a heat dissipation liquid cooling channel may be formed between the second stacked body 22 and the other stacked bodies thereon.

[0037] Figure 5 This is a top view of the heat dissipation liquid cooling channel position in the embodiment of the present invention, see Figure 1 and Figure 5 The heat dissipation liquid cooling channel 3 extends in the bonding layer of the first stack 21 and passes through at least one side of the bonding layer of the first stack 21, so that it is convenient to inject cooling liquid into the heat dissipation liquid cooling channel in the first stack 21 through the opening on the side of the bonding layer of the first stack 21.

[0038] Similarly, the heat dissipation liquid cooling channel 3 extends in the bonding layer of the second stack body 22 and passes through at least one side surface of the bonding layer of the second stack body 22, so that it is convenient to inject cooling liquid into the heat dissipation liquid cooling channel in the second stack body 22 through the opening on the side surface of the bonding layer of the second stack body 22.

[0039] Figure 6 This is a schematic diagram of a semiconductor package heat dissipation management system according to an embodiment of the present invention. Figure 6In some embodiments, the heat dissipation liquid-cooling flow channel 3 includes multiple heat dissipation liquid-cooling flow channels 3, which are interconnected to form a liquid-cooling flow channel network. The liquid-cooling flow channel network may include a main heat dissipation liquid-cooling flow channel 33 and multiple branch heat dissipation liquid-cooling flow channels 34. The multiple branch heat dissipation liquid-cooling flow channels 34 are respectively interconnected with the main heat dissipation liquid-cooling flow channel 33. The main heat dissipation liquid-cooling flow channel has a coolant inlet and a coolant outlet. The heat dissipation liquid-cooling flow channel 34 includes a branch heat dissipation liquid-cooling flow channel 341, a branch heat dissipation liquid-cooling flow channel 342, and a branch heat dissipation liquid-cooling flow channel 343. After the coolant enters the liquid-cooling flow channel network through the pipeline at the coolant inlet, it passes through the multiple branch heat dissipation liquid-cooling flow channels and flows out of the coolant outlet to the output pipeline.

[0040] See Figure 1 In some embodiments, the second stacking body 22 is located above the first stacking body 21. A heat conduction through-hole 213 is provided on the first stacking body 21. One end of the heat conduction through-hole 213 is adjacent to and not connected to the heat dissipation liquid cooling channel 3. The heat conduction through-hole 213 is filled with a heat conduction medium material. In some examples, the other end of the heat conduction through-hole 213 opens on the surface of the first stacking body 21 on the side facing away from the second stacking body 22.

[0041] In this embodiment, the thermal conductive vias 213 on the first stacked body 21 may be formed by a TSV process. Figure 7 This is a schematic diagram of the locations of the heat conduction holes in an embodiment of the present invention, see Figure 7 , the number of the heat conduction through holes 213 may include multiple.

[0042] In some embodiments, one end of the heat conduction through hole 213 is arranged adjacent to the heat dissipation liquid cooling channel 3 and is not connected. In this way, the heat conduction through hole 213 and the heat dissipation liquid cooling channel 3 together form a horizontal and vertical three-dimensional heat dissipation network, which is convenient for effectively transferring the heat in the semiconductor package out of the semiconductor package through the three-dimensional heat dissipation network; filling the heat conduction through hole 213 with a heat conduction medium material is beneficial to improving the heat dissipation efficiency.

[0043] See Figure 1 In some embodiments, the heat dissipation liquid cooling channel 3 is formed on the bonding layer on the first stack 21; a heat transfer metal layer 4 is provided in the second stack 22, and the heat transfer metal layer 4 is adjacent to the heat dissipation liquid cooling channel 3 and is not connected.

[0044] In this embodiment, a heat transfer metal layer 4 is provided within the second stack 22. This heat transfer metal layer 4 has a high thermal conductivity and can quickly transfer heat generated by the power-consuming components within the second stack 22 to the heat dissipation liquid cooling channels 3. Thus, the heat dissipation liquid cooling channels 3, the heat conduction through-holes 213, and the heat transfer metal layer 4 cooperate to form a three-dimensional, multi-dimensional heat dissipation network, which can more effectively improve the heat dissipation efficiency of the semiconductor package.

[0045] The heat transfer metal layer 4 may include at least two metal layers, and the at least two metal layers are connected by heat dissipation vias. The first metal layer of the at least two metal layers is arranged adjacent to the power consumption device in the second stack 22 and is not connected, and the second metal layer is arranged adjacent to the heat dissipation liquid cooling channel 3 and is not connected. In this way, the heat generated by the power consumption device in the second stack 22 during operation can be quickly transferred to the heat dissipation liquid cooling channel 3, and heat exchange is carried out with the coolant in the heat dissipation liquid cooling channel 3, which can further improve the heat dissipation efficiency and at the same time avoid leakage of the heat dissipation liquid in the heat dissipation liquid cooling channel 3 to affect the normal function of the semiconductor package 1; the second metal layer of the above-mentioned at least two metal layers is arranged adjacent to the heat dissipation liquid cooling channel 3 and is not connected.

[0046] Figure 8 FIG8 is a flow chart of a method for forming a heat dissipation structure of a semiconductor package according to an embodiment of the present invention. Referring to FIG8 , an embodiment of the present invention further provides a method for forming a heat dissipation structure of a semiconductor package. The method can be used to form the semiconductor package according to the aforementioned embodiment. The method comprises the following steps: S11, constructing a heat dissipation liquid cooling channel on the bonding layer of the first stack and / or the second stack; S12. Bonding the first stacked body and the second stacked body together using a hybrid bonding process to form a semiconductor package; wherein the heat dissipation liquid cooling channel is parallel to the bonding layer and is located in a non-functional area on the first stacked body and / or the second stacked body.

[0047] The method for forming a heat dissipation structure of a semiconductor package provided by an embodiment of the present invention is to set a heat dissipation liquid cooling channel on the bonding layer on the first stack body. The heat dissipation liquid cooling channel is set in a non-functional area parallel to the bonding layer and located on the first stack body 21 and / or the second stack body 22. The heat dissipation liquid cooling channel can serve as a flow channel for the heat dissipation liquid. In this way, without affecting the bonding connection between the first stack body and the second stack body, the heat generated by the first stack body and the second stack body during operation can be transferred out of the semiconductor package by heat exchange through the heat dissipation liquid in the heat dissipation liquid cooling channel, thereby improving the heat dissipation effect of the semiconductor package.

[0048] In some embodiments, a heat dissipation liquid cooling channel is constructed in the bonding layer on the first stack and / or the second stack (step S11), including: in the bonding layer area of the first stack and in the non-functional area located on the first stack and / or the second stack, a groove is manufactured by an etching process, the groove extending in a direction parallel to the bonding layer and passing through at least one side of the bonding layer; and / or, in the bonding layer area of the second stack and in the non-functional area located on the first stack and / or the second stack, a groove is manufactured by an etching process, the groove extending in a direction parallel to the bonding layer and passing through at least one side of the bonding layer.

[0049] In this embodiment, in the bonding layer area of the first stack body, and in the non-functional area located on the first stack body and / or the second stack body, a groove is manufactured by an etching process, and the groove extends through at least one side of the bonding layer in a direction parallel to the bonding layer; when the hybrid bonding process is stacked, the second stack body stacked on top closes the etching surface opening of the groove on the first stack body below, and retains the opening on the side of the groove on the first stack body to form a heat dissipation liquid cooling flow channel; and / or, in the bonding layer area of the second stack body, and in the non-functional area located on the first stack body and / or the second stack body, a groove is manufactured by an etching process, and the groove extends through at least one side of the bonding layer in a direction parallel to the bonding layer; when the hybrid bonding process is stacked, the first stack body stacked below closes the etching surface opening of the groove on the second stack body, and retains the opening on the side of the groove on the second stack body to form a heat dissipation liquid cooling flow channel.

[0050] Without affecting the function and performance of the original semiconductor package, a heat dissipation liquid cooling channel is manufactured through the bonding layer on the first stacking body and / or the second stacking body. The heat dissipation liquid cooling channel is located in an area on the bonding layer on the first stacking body and / or the second stacking body that does not affect the function of the original semiconductor package.

[0051] Grooves can be manufactured on the first stack and / or the second stack by utilizing an etching process, the etching process including dry etching and wet etching and other processes that can process grooves on the grains / wafers without adversely affecting the grains / wafers; the depth and / or width of the grooves can be adjusted according to actual needs to ensure that the grooves can be manufactured without affecting the function and performance of the original semiconductor package.

[0052] The groove passes through at least one edge of the stack in a direction parallel to the bonding layer of the first stack and the second stack, so as to facilitate the subsequent connection of the heat dissipation liquid cooling channel formed by the groove with an external liquid flow pump, thereby realizing the flow of liquid in the heat dissipation liquid cooling channel, transferring the heat inside the semiconductor package to the outside, and realizing the heat dissipation inside the semiconductor package.

[0053] In some embodiments, the process of constructing the heat dissipation liquid cooling channel is as follows: Figure 2 As shown, a groove is first processed at a suitable position on the upper surface of the first stack, and then a second stack is stacked on top of it to close the groove processing surface, retaining the opening on the side of the groove to form a heat dissipation liquid cooling flow channel; the number and depth of the heat dissipation liquid cooling flow channels can be adjusted according to actual conditions.

[0054] In some embodiments, the method for forming a heat dissipation structure of a semiconductor package may further include: forming a heat conduction through-hole in the first stack body, and filling the heat conduction through-hole with a heat conduction medium material, so that after the first stack body and the second stack body are bonded together, one end of the heat conduction through-hole is arranged adjacent to and not connected to the heat dissipation liquid cooling channel; in some examples, the other end of the heat conduction through-hole opens to the surface of the first stack body on the side facing away from the second stack body.

[0055] In some embodiments, the method for forming a heat dissipation structure of a semiconductor package may further include: constructing vertical heat transfer structures on the first stack and / or the second stack, these vertical heat transfer structures include heat conduction through holes made for heat dissipation; using a TSV process to prepare heat conduction through holes for heat dissipation at positions on the first stack and / or the second stack that do not affect the function of the original semiconductor package, and filling the heat conduction through holes with a heat conduction medium material with a high heat dissipation coefficient to improve the heat dissipation efficiency of the semiconductor package.

[0056] In some embodiments, a thermally conductive via is formed on the first stack using a TSV process. One end of the thermally conductive via is disposed adjacent to, but not connected to, a heat dissipation liquid cooling channel. The thermally conductive via can be filled with a heat-conducting dielectric material to form a three-dimensional semiconductor package heat dissipation structure in conjunction with the heat dissipation liquid cooling channel. This solves the problem of insufficient heat dissipation and low heat dissipation efficiency associated with traditional single-directional heat dissipation methods.

[0057] In this embodiment, the heat conductive dielectric material filled in the thermal via is copper. However, copper easily diffuses into the bulk silicon region, changing silicon mobility and affecting the reliability of the semiconductor package. Therefore, a diffusion barrier layer is required before copper filling to prevent copper from diffusing into the silicon substrate and ensure the performance of the thermal via. The diffusion barrier layer is selected from materials with excellent barrier properties and conductivity, including but not limited to tantalum, tantalum nitride, titanium, and / or titanium nitride. The deposition method can be PVD, CVD, and / or ALD, depending on the TSV size and specific requirements. The thickness of the barrier layer should be carefully controlled and appropriate annealing should be performed to meet the requirements of TSV fabrication. The filling material is not limited to copper and can also include other materials with high heat dissipation coefficients.

[0058] In some embodiments, the method for forming a semiconductor package heat dissipation structure may further include: forming a heat transfer metal layer in the second stack, so that after the first stack and the second stack are bonded together, the heat transfer metal layer is adjacent to and disconnected from the heat dissipation liquid cooling channel.

[0059] A heat transfer metal layer that does not affect the function of the semiconductor package can be formed using a metal wiring process and / or a TSV process, so that after the first stack and the second stack are bonded together, the heat transfer metal layer is adjacent to the heat dissipation liquid cooling channel and is not connected, thereby improving the heat dissipation efficiency and avoiding leakage that causes a short circuit or affects the function of the chip package 1.

[0060] The TSV process for preparing the heat conduction vias and the metal wiring process for arranging the heat transfer metal layer are normal processes. No additional mask or other special process costs are required. They can be processed and formed using the normal TSV process and metal wiring process.

[0061] See Figure 6 An embodiment of the present invention further provides a semiconductor package heat dissipation management system 5, comprising: a chip temperature measurement module 51, a liquid flow pump 52, a controller 53, and the semiconductor package 1 described in any of the aforementioned embodiments; the chip temperature measurement module 51 is arranged inside the semiconductor package, and is used to detect the operating temperature of the first stack 21 and / or the second stack 22; the liquid flow pump 52 is connected to the heat dissipation liquid cooling channel 3 of the semiconductor package; the controller 53 is connected to the chip temperature measurement module 51 and the liquid flow pump 52, and is used to adjust the flow rate of the liquid flow pump 52 according to the operating temperature of the first stack 21 and / or the second stack 22 detected by the chip temperature measurement module 51 to control the liquid flow rate in the heat dissipation liquid cooling channel.

[0062] The semiconductor package heat dissipation management system provided by an embodiment of the present invention is configured by setting a heat dissipation liquid cooling channel on the bonding layer on the first stacking body and / or the second stacking body, and setting a liquid flow pump outside the semiconductor package, the liquid flow pump being connected to the heat dissipation liquid cooling channel of the semiconductor package; a chip temperature measurement module is set inside the semiconductor package for detecting the operating temperature of the first stacking body and / or the second stacking body; a controller is connected to the chip temperature measurement module and the liquid flow pump, and is configured to adjust the flow rate of the liquid flow pump according to the operating temperature of the first stacking body and / or the second stacking body detected by the chip temperature measurement module to control the liquid flow rate in the heat dissipation liquid cooling channel, thereby improving the heat dissipation effect of the semiconductor package.

[0063] It should be noted that, in this document, the directions such as "up", "down", "horizontal", or "vertical" all refer to the directions shown in the drawings of the specification. In practice, when the structures are rotated or flipped as needed, resulting in the up, down, horizontal, or vertical directions being different from those in the specification, the same rotation or flipping is performed with reference to the directions shown in the drawings to achieve a unified structural observation coordinate system. In this document, relational terms such as "first and second" are used only to distinguish a first entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. Without further limitation, the phrase "comprising a..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the elements.

[0064] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A semiconductor package, characterized in that: include: A chip stack, comprising a first stack and a second stack, wherein the first stack and the second stack are bonded together via respective bonding layers; The heat dissipation liquid cooling channel is formed on the bonding layer of the first stacked body and / or the second stacked body, is arranged in a direction parallel to the bonding layer, and is located in a non-functional area on the first stacked body and / or the second stacked body.

2. The semiconductor package according to claim 1, wherein The first stacked body is a die or a wafer, and the second stacked body is a die or a wafer.

3. The semiconductor package according to claim 1, wherein The heat dissipation liquid cooling channel is a groove formed in the bonding layer on the first stacked body; or, the heat dissipation liquid cooling channel is a groove formed in the bonding layer on the second stacked body.

4. The semiconductor package according to claim 1, wherein The heat dissipation liquid cooling channel is extended in the bonding layer of the first stack and passes through at least one side surface of the bonding layer of the first stack; and / or The heat dissipation liquid cooling channel is extended in the bonding layer of the second stacked body and passes through at least one side surface of the bonding layer of the second stacked body.

5. The semiconductor package according to claim 1, wherein The heat dissipation liquid cooling flow channels include a plurality of heat dissipation liquid cooling flow channels, and the plurality of heat dissipation liquid cooling flow channels are connected to form a liquid cooling flow channel network.

6. The semiconductor package according to claim 1, wherein A heat conduction through hole is provided on the first stacked body, one end of the heat conduction through hole is adjacent to and not connected to the heat dissipation liquid cooling channel, and the heat conduction through hole is filled with a heat conduction medium material.

7. The semiconductor package according to claim 1 or 6, wherein: The heat dissipation liquid cooling channel is formed in a bonding layer on the first stack; A heat transfer metal layer is provided in the second stacked body, and the heat transfer metal layer is adjacent to and not connected to the heat dissipation liquid cooling channel.

8. The semiconductor package according to claim 7, wherein: The heat transfer metal layer includes at least two metal layers, and the at least two metal layers are connected through heat dissipation vias; The first metal layer of the at least two metal layers is disposed adjacent to and not connected to the power consumption device in the second stack, and the second metal layer of the at least two metal layers is disposed adjacent to and not connected to the heat dissipation liquid cooling channel.

9. A method for forming a heat dissipation structure of a semiconductor package, characterized in that: The method comprises: Constructing a heat dissipation liquid cooling channel on the bonding layer on the first stacked body and / or the second stacked body; The first stack and the second stack are bonded together using a hybrid bonding process to form a semiconductor package; wherein the heat dissipation liquid cooling channel is parallel to the bonding layer and is located in a non-functional area on the first stack and / or the second stack.

10. The method for forming a heat dissipation structure of a semiconductor package according to claim 9, wherein: The bonding layer on the first stack and / or the second stack constructs a heat dissipation liquid cooling channel, comprising: A groove is formed in the bonding layer region of the first stack and in a non-functional region on the first stack and / or the second stack by etching, wherein the groove extends in a direction parallel to the bonding layer and penetrates at least one side of the bonding layer; and / or A groove is manufactured by etching in the bonding layer region of the second stack and in a non-functional region on the first stack and / or the second stack. The groove extends in a direction parallel to the bonding layer and penetrates at least one side of the bonding layer.

11. The method for forming a heat dissipation structure of a semiconductor package according to claim 9, wherein: Also includes: A heat conduction through hole is formed in the first stacked body, and a heat conduction medium material is filled in the heat conduction through hole, so that after the first stacked body and the second stacked body are bonded together, one end of the heat conduction through hole is adjacent to the heat dissipation liquid cooling channel and is not connected.

12. The method for forming a heat dissipation structure of a semiconductor package according to claim 9, wherein: Also includes: A heat transfer metal layer is formed in the second stacked body, so that after the first stacked body and the second stacked body are bonded together, the heat transfer metal layer is adjacent to and not connected to the heat dissipation liquid cooling channel.

13. A semiconductor package heat dissipation management system, characterized in that: include: A chip temperature measurement module, a liquid flow pump, a controller, and a semiconductor package according to any one of claims 1 to 8; The chip temperature measurement module is arranged inside the semiconductor package and is used to detect the operating temperature of the first stack and / or the second stack; The liquid flow pump is connected to the heat dissipation liquid cooling channel of the semiconductor package; The controller is connected to the chip temperature measurement module and the liquid flow pump, and is used to adjust the flow rate of the liquid flow pump to control the liquid flow rate in the heat dissipation liquid cooling channel according to the operating temperature of the first stack and / or the second stack detected by the chip temperature measurement module.

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