Light-emitting display device

Abstract

A light emitting display device according to the present disclosure includes: a substrate; a display area disposed at a middle portion of the substrate and including an emission area and a non-emission area; a first color filter disposed in the emission region and including at least one of a first color layer, a second color layer, and a third color layer; a second color filter disposed in the non-emission region and including at least one of the first color layer, the second color layer, and the third color layer; a driving element disposed on the second color filter in the non-emission region; and a light emitting element disposed on the first color filter in the emission area and connected to the driving element.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2024-0019266, filed on February 7, 2024, which is hereby incorporated by reference herein in its entirety. Technical Field

[0003] The present disclosure relates to a light-emitting display device having a structure for preventing reflection of external light. Background Art

[0004] A light-emitting display device, which is one of the self-luminous display devices, may have a structure in which a plurality of pixels including light-emitting diodes are arranged in a matrix manner. Each pixel may include an emission area that provides light for representing a video image and a non-emitting area that includes a driving element. Since the metal material can be patterned in the non-emitting area, external light incident from the outside can be reflected. Therefore, the video image from the emission area may not be correctly perceived due to the reflected external light. Therefore, there is an increasing demand for light-emitting display devices equipped with a structure that can prevent degradation of display quality due to reflection of external light. Summary of the Invention

[0005] In order to solve the above-mentioned problems, an object of the present disclosure is to provide a light-emitting display device that improves display quality by suppressing reflection of external light from a non-emitting area where a metal material may be provided.

[0006] In order to achieve the above-mentioned purposes, the light-emitting display device according to the contents of the present disclosure includes: a substrate; a display area, which is arranged at the middle part of the substrate and includes an emission area and a non-emission area; a first color filter, which is arranged in the emission area and includes at least one of a first color layer, a second color layer and a third color layer; a second color filter, which is arranged in the non-emission area and includes at least one of a first color layer, a second color layer and a third color layer; a driving element, which is arranged on the second color filter in the non-emission area; and a light-emitting element, which is arranged on the first color filter in the emission area and is connected to the driving element.

[0007] In one aspect, each of the first color layer, the second color layer, and the third color layer includes a color material having a color band different from each other.

[0008] In one aspect, the first color layer includes a color material having a red wavelength band, the second color layer includes a color material having a green wavelength band, and the third color layer includes a color material having a blue wavelength band.

[0009] In one aspect, the second color filter includes a blue color layer and a red color layer stacked sequentially.

[0010] In one aspect, the second color filter includes a blue color layer and a green color layer stacked sequentially.

[0011] In one aspect, the second color filter includes a red color layer and a green color layer stacked sequentially.

[0012] In one aspect, the second color filter includes a red color layer, a green color layer, and a blue color layer stacked sequentially.

[0013] In one aspect, the light emitting display device further includes a transparent insulating layer disposed under the first color filter in the emission area; and a scattering pattern disposed under the transparent insulating layer.

[0014] In one aspect, the scattering pattern includes the same color material as the first color filter.

[0015] In one aspect, the transparent insulating layer has a higher refractive index than the first color filter.

[0016] In one aspect, the first color filter has a refractive index of 1.5. The transparent insulating layer has a refractive index of 1.9.

[0017] In one aspect, the driving element includes a repair portion, and the second color filter provided at a region corresponding to the repair portion includes any one of a first color layer, a second color layer, and a third color layer.

[0018] In one aspect, the color layer provided at the region corresponding to the repair portion includes a color material having the same wavelength as the laser light irradiated to the repair portion.

[0019] In one aspect, the light-emitting display device further includes: a buffer layer disposed on the second color filter; a thin film transistor formed on the buffer layer; a passivation layer on the thin film transistor; a first color filter disposed on the passivation layer; a planarization layer disposed on the passivation layer and the first color filter; a pixel electrode disposed on the planarization layer, connected to the thin film transistor and corresponding to an emission area; a dam disposed on the pixel electrode to define the emission area; an emission layer on the pixel electrode and the dam; and a common electrode disposed on the emission layer.

[0020] In one aspect, the light emitting display device further includes a diffusion pattern disposed at the same layer as the second color filter and below the first color filter, and having the same color as the first color filter.

[0021] The present disclosure may also provide a light-emitting display device, including: a substrate, the substrate including a display area, the display area including an emission area and a non-emission area; a second color filter, the second color filter is arranged in the non-emission area and includes at least one color layer; a driving element, the driving element is arranged on the second color filter in the non-emission area; and a light-emitting element, the light-emitting element is arranged in the emission area and connected to the driving element.

[0022] A light-emitting display device according to the present disclosure may include at least one color layer (in some examples, two color layers) disposed in a non-emitting area, thereby suppressing reflection of external light by a metal material disposed in the non-emitting area. Therefore, the present disclosure may provide a light-emitting display device in which degradation of display quality due to reflection of external light in the non-emitting area may be prevented. High-quality video information may be provided even if high brightness is not provided from the emitting area to overcome the reflection of external light occurring in the non-emitting area. Therefore, the present disclosure may provide a bright and clear image with the same power consumption, or provide an image of the same quality with lower power consumption than before. Therefore, the present disclosure may provide a light-emitting display device having reduced power consumption, low reflection, high color reproducibility, and high light extraction efficiency and brightness at the same power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings, which are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this application, illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0024] Figure 1 is a plan view illustrating an overall schematic structure of a light-emitting display device according to an exemplary aspect of the present disclosure.

[0025] Figure 2 is a circuit diagram of one sub-pixel included in a light-emitting display device according to an exemplary aspect of the present disclosure.

[0026] Figure 3 is a plan view illustrating a structure of one sub-pixel included in a light-emitting display device according to an exemplary aspect of the present disclosure.

[0027] Figure 4 It is along Figure 3 An enlarged cross-sectional view of a cutting line II' in FIG. 1 shows a structure of a bottom emission type light emitting display device according to an exemplary aspect of the present disclosure.

[0028] Figure 5 It is along Figure 1An enlarged cross-sectional view of a cutting line II-II' in FIG. 1 shows the structure of a bottom emission type light emitting display device according to an exemplary aspect of the present disclosure.

[0029] Figure 6 It is along Figure 1 An enlarged cross-sectional view of a cutting line III-III' in FIG. 1 shows the structure of a bottom emission type light emitting display device according to an exemplary aspect of the present disclosure.

[0030] Figure 7 is an enlarged plan view illustrating a structure of one sub-pixel included in a light-emitting display device according to another exemplary aspect of the present disclosure. DETAILED DESCRIPTION

[0031] The advantages and features of the present disclosure and their implementation methods will be explained by the following embodiments described with reference to the accompanying drawings. However, the present disclosure can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these example embodiments are provided so that the present disclosure can be sufficiently thorough and complete to help those skilled in the art fully understand the scope of the present disclosure. In addition, the scope of protection of the present disclosure is defined by the claims and their equivalents.

[0032] The shapes, sizes, ratios, angles, numbers, etc. shown in the drawings for the purpose of describing various exemplary embodiments of the present disclosure are given by way of example only. Therefore, the present disclosure is not limited to the details shown. Unless otherwise indicated, similar reference numerals refer to similar elements throughout the specification. In the following description, a detailed description of a related known function or configuration may be omitted if such a detailed description would unnecessarily obscure the main points of the present disclosure.

[0033] Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Where possible, the same reference numerals will be used throughout the accompanying drawings to refer to the same or similar parts. In this specification, it should be noted that, for elements, similar reference numerals that have been used to represent similar elements in other drawings are used as much as possible. In the following description, when functions and configurations known to those skilled in the art are not related to the basic configuration of the present disclosure, their detailed description will be omitted. The terms described in the specification should be understood as follows.

[0034] In this specification, when the terms "including," "having," "comprising," etc. are used, one or more other elements may be added unless a term such as "only" is used. Elements described in the singular are intended to include plural elements, and vice versa, unless the context clearly indicates otherwise.

[0035] When explaining an element, the element is to be interpreted as including an error or tolerance range even in the case where an explicit description of such an error or tolerance range is not provided.

[0036] In the description of various embodiments of the present disclosure, in the case of describing a positional relationship, for example, in the case of using "on", "above", "below", "above", "below", "next to", "near", etc. to describe the positional relationship between two parts, unless more restrictive terms such as "immediately", "directly" or "closely" are used, one or more other parts may be located between the two parts. For example, where an element or layer is disposed "on" another element or layer, a third layer or a third element may be inserted therebetween. Furthermore, if a first element is described as being positioned "on" a second element, this does not necessarily mean that the first element is positioned above the second element in the figure. The upper and lower parts of the object of interest may change depending on the orientation of the object. Therefore, where a first element is described as being positioned "on" a second element, the first element may be positioned "below" or "above" the second element in the figure or in the actual configuration depending on the orientation of the object.

[0037] When describing temporal relationships, discontinuities may be included when the temporal order is described as, for example, "after," "subsequently," "next," or "before," unless more restrictive terms such as "just," "immediately," or "directly" are used.

[0038] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms because these terms are not used to define a particular order. These terms are only used to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of this disclosure.

[0039] When describing the components of the present disclosure, terms such as "first," "second," "A," "B," "(a)," and "(b)" may be used. These terms are used only to distinguish these components from other components, and the nature, order, sequence, or number of the corresponding components are not limited by these terms. When an element is described as being "linked," "coupled," or "connected" to another element, unless otherwise indicated, the element may be directly or indirectly linked, coupled, or connected to the other element. It should be understood that one or more additional elements may be "interposed" between two elements that are described as being "linked," "connected," or "coupled" to each other.

[0040] It should be understood that the term "at least one" should be understood to include any and all combinations of one or more of the associated listed items. For example, the meaning of "at least one of a first element, a second element, and a third element" encompasses the combination of all three listed elements, the combination of any two of the three elements, and each individual element - the first element, the second element, and the third element.

[0041] The features of the various embodiments of the present disclosure may be coupled or combined with each other in part or in whole, and may interoperate and be technically driven in various ways, as will be fully understood by those skilled in the art. The embodiments of the present disclosure may be performed independently of each other, or may be performed together in a mutually dependent relationship.

[0042] Hereinafter, examples of display devices according to the present disclosure will be described in detail with reference to the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts. Since the scale of each of the elements shown in the drawings may differ from the actual scale for ease of description, the present disclosure is not limited to the scale shown in the drawings.

[0043] Hereinafter, the present disclosure will be described with reference to the accompanying drawings. For the sake of convenience, the proportions of the elements shown in the drawings are different from the actual proportions, and therefore are not limited to the proportions shown in the drawings.

[0044] Figure 1 1 is a plan view showing the overall schematic structure of a light-emitting display device according to an embodiment of the present disclosure. Figure 1 , the X-axis refers to a direction parallel to the scan lines, the Y-axis refers to a direction of the data lines, and the Z-axis refers to a height direction of the display device.

[0045] Reference Figure 1 The light emitting display device includes a substrate 110 , a gate (or scan) driver 200 , a pad portion 300 , a source driver IC (integrated circuit) 410 , a flexible circuit film 430 , a circuit board 450 , and a timing controller 500 .

[0046] Substrate 110 may include an electrically insulating material or a flexible material. Substrate 110 may be made of, but is not limited to, glass, metal, or plastic. When the light-emitting display device is a flexible display device, substrate 110 may be made of a flexible material such as plastic. For example, substrate 110 may include a transparent polyimide material.

[0047] The substrate 110 may include a display area AA and a non-display area NDA. The display area AA, which is an area for presenting a video image, may be defined as a majority of the central area of the substrate 110, but is not limited thereto. In the display area AA, a plurality of scan lines SL (or gate lines), a plurality of data lines DL, and a plurality of pixels P may be formed or disposed.

[0048] Here, each pixel P may include a first subpixel SP1, a second subpixel SP2, and a third subpixel SP3. However, the present invention is not limited thereto, and each pixel P may include a first subpixel SP1, a second subpixel SP2, a third subpixel SP3, and a fourth subpixel. For example, the first subpixel SP1 may be a red subpixel, the second subpixel SP2 may be a green subpixel, and the third subpixel SP3 may be a blue subpixel.

[0049] Each of the sub-pixels SP1, SP2, and SP3 may include an emission area EA and a non-emission area NEA. The emission area EA may be defined as an area that generates light for displaying a video image. The non-emission area NEA may be defined as an area that does not generate light for displaying an image. In addition, areas other than the emission area EA in the sub-pixels SP1, SP2, and SP3 may be defined as non-emission areas NEA. The non-emission areas NEA may be arranged to surround the emission area EA. The emission area EA may be an area in which a light-emitting element is provided. The non-emission area NEA may be an area in which a driving element and a signal line for driving the light-emitting element are located.

[0050] A non-display area NDA, which is an area not presenting a video image, may be defined at a peripheral area of the substrate 110 surrounding all or a portion of the display area AA. In the non-display area NDA, a gate driver 200 and a pad portion 300 may be formed or disposed.

[0051] The gate driver 200 can supply a scan (or gate) signal to the scan line according to a gate control signal received from the timing controller 500 through the pad portion 300. The gate driver 200 can be formed as a GIP (Gate In Panel) type in a non-display area NDA provided at a peripheral area of the display area AA on the substrate 110. The GIP type means that the gate driver 200 is directly formed on the substrate 110. For example, the gate driver 200 may include a shift register. The GIP type refers to a structure in which the transistors included in the shift register of the gate driver 200 are directly formed on the substrate 110.

[0052] The pad portion 300 may supply a data signal to the data line DL according to a data control signal received from the timing controller 500. The source driver IC 410 made of a driver chip may be mounted on the flexible circuit film 430 and may be attached to the pad portion 300 on the outer side of one side of the display area AA of the substrate 110 using a TAB (Tape Automated Bonding) method.

[0053] The source driver IC 410 may receive digital video data and a source control signal from the timing controller 500. The source driver IC 410 may convert the digital video data into an analog data voltage according to the source control signal and then supply the analog data voltage to the data line. When the source driver IC 410 is manufactured in a chip type, the source driver IC 410 may be mounted on the flexible circuit film 430 in a COF (chip on film) or COP (chip on plastic) type.

[0054] The flexible circuit film 430 may include a plurality of first link lines connecting the pad portion 300 to the source driver IC 410, and a plurality of second link lines connecting the pad portion 300 to the circuit board 450. The flexible circuit film 430 may be attached to the pad portion 300 using an anisotropic conductive film so that the pad portion 300 can be connected to the first link lines of the flexible circuit film 430.

[0055] The circuit board 450 may be attached to the flexible circuit film 430. The circuit board 450 may include a plurality of circuits implemented as a driving chip. For example, the circuit board 450 may be a printed circuit board or a flexible printed circuit board.

[0056] The timing controller 500 can receive digital video data and timing signals from an external system board via a cable of the circuit board 450. Based on the timing signals, the timing controller 500 can generate a gate control signal for controlling the operation timing of the gate driver 200 and a source control signal for controlling the source driver IC 410. The timing controller 500 can supply the gate control signal to the gate driver 200 and the source control signal to the source driver IC 410. Depending on the product type, the timing controller 500 can be formed into a single chip with the source driver IC 410 and mounted on the substrate 110.

[0057] Further reference will be made below Figures 2 to 4 , to describe a light-emitting display device according to an exemplary aspect of the present disclosure. Figure 2 is a circuit diagram of one sub-pixel included in a light-emitting display device according to an exemplary aspect of the present disclosure. Figure 3 is a plan view illustrating a structure of one sub-pixel included in a light-emitting display device according to an exemplary aspect of the present disclosure.

[0058] First, refer to Figure 2 and Figure 3 The light-emitting display device according to the present disclosure includes a plurality of pixels P arranged in a matrix. Each pixel P may include at least three sub-pixels SP. Each sub-pixel SP of the light-emitting display device may be defined by a scan line SL, a data line DL, and a drive current line VDD. A sub-pixel SP of the light-emitting display device may include a switching thin-film transistor ST, a drive thin-film transistor DT, a light-emitting diode OLE, and a storage capacitor Cst. The drive current line VDD may be supplied with a high-level voltage to drive the light-emitting diode OLE.

[0059] In the light-emitting display device according to the present disclosure, the scan line SL can be partially divided into two branches. The scan line SL can extend in the X-axis direction, and the data line DL and the drive current line VDD can extend in the Y-axis direction. Therefore, a portion of the scan line SL can intersect with the data line DL and the drive current line VDD. At this intersection, the scan line SL can be disconnected. To restore (or repair) this disconnection, the scan line SL can be branched into a first scan line SL1 and a second scan line SL2.

[0060] For example, when the first scan line SL1 may be disconnected or interrupted, the gate signal can be transmitted to the gate line SL and the gate electrode via the second scan line SL2. Alternatively, when a short circuit occurs between the first scan line SL1 and the data line DL or the drive current line VDD, the short circuit can be resolved by severing the two ends of the first scan line SL1 that are connected to or branched from the scan line SL. For this recovery process, a cutting area CA can be defined at the portion where the scan line SL is divided into the first scan line SL1 and the second scan line SL2. When necessary, that is, when a short circuit occurs, the first scan line SL1 or the second scan line SL2 can be separated from the scan line SL by irradiating a laser into the cutting area CA.

[0061] The switching thin film transistor ST may be provided at the intersection of the scan line SL and the data line DL. The switching thin film transistor ST may include a gate electrode SG, a semiconductor layer SA, a source electrode SS, and a drain electrode SD. The gate electrode SG of the switching thin film transistor ST may be part of the scan line SL. The semiconductor layer SA may be provided to intersect the gate electrode SG. The portion where the semiconductor layer SA overlaps with the gate electrode SG may be defined as a channel region. The source electrode SS may be connected to the data line DL or branch from the data line DL, and the drain electrode SD may be connected to the driving thin film transistor DT. One side of the semiconductor layer SA is connected to the source electrode SS, and the other side of the semiconductor layer SA is connected to the drain electrode SD. By supplying a data signal to the driving thin film transistor DT, the switching thin film transistor ST may function to select the pixel to be driven.

[0062] The driving thin-film transistor DT can drive the light-emitting diode OLE of the pixel selected by the switching thin-film transistor ST. The driving thin-film transistor DT may include a gate electrode DG, a semiconductor layer DA, a source electrode DS, and a drain electrode DD. The gate electrode DG of the driving thin-film transistor DT may be connected to the drain electrode SD of the switching thin-film transistor ST. For example, the gate electrode DG of the driving thin-film transistor DT may be connected to the drain electrode SD of the switching thin-film transistor ST or extend from the drain electrode SD of the switching thin-film transistor ST. In the driving thin-film transistor DT, the drain electrode DD is connected to or branches from the drive current line VDD, and the source electrode DS is connected to the pixel electrode ANO (or anode electrode) of the light-emitting diode (or light-emitting element) OLE. The semiconductor layer DA may be arranged to intersect the gate electrode DG. The region where the semiconductor layer DA and the gate electrode DG overlap may be defined as a channel region. The source electrode DS is connected to one side of the semiconductor layer DA, and the drain electrode DD is connected to the other side of the semiconductor layer DA. A storage capacitor Cst may be provided between the gate electrode DG of the driving thin-film transistor DT and the anode electrode ANO of the light-emitting diode OLE.

[0063] The driving thin film transistor DT may be disposed between the driving current line VDD and the light emitting diode OLE and may control the amount of current flowing from the driving current line VDD to the light emitting diode OLE according to a voltage difference between the gate electrode DG and the source electrode DS.

[0064] The light-emitting diode OLE may include a pixel electrode ANO (or anode electrode), an emission layer EL, and a common electrode CAT (or cathode electrode). The light-emitting diode OLE may display an image by emitting light according to a current controlled by a driving thin-film transistor DT. The pixel electrode ANO of the light-emitting diode OLE is connected to the source electrode DS of the driving thin-film transistor DT, and the common electrode CAT is connected to a low-power line VSS supplied with a low-level voltage. Therefore, the light-emitting diode OLE is driven by a current flowing from the driving current line VDD to the low-power line VSS according to the operation of the driving thin-film transistor DT.

[0065] exist Figure 2 and Figure 3In the embodiment, a driving element for driving the light-emitting diode OLE may include two thin film transistors and one capacitor. However, the present invention is not limited thereto, and the driving element may include three thin film transistors and one capacitor. For example, the three thin film transistors may include a driving thin film transistor, a switching thin film transistor, and a compensation thin film transistor according to their functions. The driving thin film transistor may supply a driving current based on a data voltage to the light-emitting diode. The switching thin film transistor may supply a data voltage from a data line to the driving thin film transistor in response to a scan signal. The compensation thin film transistor may compensate for changes in a characteristic value of the driving thin film transistor in response to a scan signal. The capacitor may store a gate-source voltage or a gate-drain voltage of the driving thin film transistor.

[0066] Will refer further Figure 4 , to illustrate the cross-sectional structure of the light-emitting display device according to the present disclosure. Figure 4 It is along Figure 3 An enlarged cross-sectional view of a cutting line II' in FIG. 1 shows a structure of a bottom emission type light emitting display device according to an exemplary aspect of the present disclosure.

[0067] A lower color filter CFD may be provided on the substrate 110. The lower color filter CFD may be arranged to correspond to the non-emission area NEA in the sub-pixel SP. The lower color filter CFD may include a first color layer CL1 and a second color layer CL2 sequentially stacked on each other. However, without limitation thereto, the lower color filter CFD may further include a third color layer on the first color layer CL1 and the second color layer CL2. Here, each of the first color layer CL1, the second color layer CL2, and the third color layer may include a color assigned to any sub-pixel included in the display device.

[0068] When the display device includes red, green, and blue sub-pixels, each of the first, second, and third color layers CL1, CL2, and CL3 can be any one of red, green, and blue, and they can be different colors from one another. For example, the first color layer CL1 can include a color material having a red wavelength band, the second color layer CL2 can include a color material having a green wavelength band, and the third color layer can include a color material having a blue wavelength band. Here, the red wavelength band can range from 620nm to 780nm, and can typically be a wavelength of 700nm. The green wavelength band can range from 490nm to 570nm, and can typically be a wavelength of 550nm. The blue wavelength band can range from 430nm to 490nm, and can typically be a wavelength of 450nm.

[0069] In addition, a scattering pattern SCP may be provided in an area corresponding to the emission area EA at the same layer as the lower color filter CFD. The scattering pattern SCP may have a shape in which a plurality of small square shapes (or rectangles) may be dispersed within the emission area EA. The scattering pattern SCP may be dispersed irregularly or may be arranged as shown in FIG. Figure 3 As shown, the scattering pattern SCP is regularly arranged in a matrix. The scattering pattern SCP can be any one of the first color layer CL1, the second color layer CL2, and the third color layer. For example, the scattering pattern SCP set in the red sub-pixel can include a color material having a red wavelength band. The scattering pattern SCP set in the green sub-pixel can include a color material having a green wavelength band. In addition, the scattering pattern SCP set in the blue sub-pixel can include a color material having a blue wavelength band.

[0070] Furthermore, only one of the first color layer CL1 and the second color layer CL2 is disposed in the area corresponding to the cutting area CA. For example, the first color layer CL1 (the lower layer) may be disposed in the cutting area CA, but the second color layer CL2 (the upper layer) may be removed. Here, the color layer disposed in the cutting area CA may have a color wavelength range that can pass through the laser beam irradiating the cutting area CA. For example, when a green laser is used for the cutting process, the first color layer CL1 disposed in the cutting area CA may include a color material having a green wavelength band. As another example, when a blue laser is used for the cutting process, the first color layer CL1 disposed in the cutting area CA may include a color material having a blue wavelength band.

[0071] At the non-emission area NEA, a lower color filter CFD having at least two different color layers stacked on each other is provided. At the emission area EA, a scattering pattern SCP including a color material having a color band corresponding to the color filter assigned to the subpixel may be provided.

[0072] A transparent insulating layer HRL may be provided on the substrate 110 having the lower color filter CFD and the scattering pattern SCP. The transparent insulating layer HRL may be a buffer layer. The transparent insulating layer HRL may have a light transmittance of 95% or more.

[0073] A semiconductor layer SA of the switching thin film transistor ST and a semiconductor layer DA of the driving thin film transistor DT may be formed on the transparent insulating layer HRL. Not shown, an additional buffer layer may be provided between the semiconductor layers SA and DA and the substrate 110.

[0074] A gate insulating layer GI may be provided on the semiconductor layers SA and DA and the substrate 110. A gate electrode SG of the switching thin film transistor ST and a gate electrode DG of the driving thin film transistor DT may be formed on the gate insulating layer GI. The gate electrode SG of the switching thin film transistor ST may be provided to overlap with the semiconductor layer SA of the switching thin film transistor ST. The region where the semiconductor layer SA of the switching thin film transistor ST overlaps with the gate electrode SG may be defined as a channel region. The gate electrode DG of the driving thin film transistor DT may be provided to overlap with the semiconductor layer DA of the driving thin film transistor DT. The region where the semiconductor layer DA of the driving thin film transistor DT overlaps with the gate electrode DG may be defined as a channel region.

[0075] An intermediate insulating layer ILD is deposited on the gate electrodes SG and DG and the gate insulating layer GI. Source and drain electrodes are formed on the intermediate insulating layer ILD. Specifically, a source electrode SS of the switching thin film transistor ST may be formed so as to contact one side of the semiconductor layer SA of the switching thin film transistor ST, and a drain electrode SD of the switching thin film transistor ST may be formed so as to contact the other side of the semiconductor layer SA of the switching thin film transistor ST. Furthermore, a source electrode DS of the driving thin film transistor DT may be formed so as to contact one side of the semiconductor layer DA of the driving thin film transistor DT, and a drain electrode DD of the driving thin film transistor DT may be formed so as to contact the other side of the semiconductor layer DA of the driving thin film transistor DT.

[0076] The source electrode SS of the switching thin film transistor ST may branch from the data line DL. The drain electrode DD of the driving thin film transistor DT may branch from the driving current line VDD. The drain electrode SD of the switching thin film transistor ST may be connected to the gate electrode DG of the driving thin film transistor DT via a drain contact hole formed in the intermediate insulating layer ILD.

[0077] A passivation layer PAS may be deposited on the substrate 110 having the thin film transistors ST and DT. The passivation layer PAS is preferably made of an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx). An upper color filter CFU may be provided on the passivation layer PAS in an area corresponding to the emission area EA. The upper color filter CFU may be slightly larger than the pixel electrode ANO that may be formed later and overlap with the pixel electrode ANO.

[0078] The upper color filter (CFU) may be any one of the first color layer CL1, the second color layer CL2, and the third color layer. For example, the scattering pattern SCP provided in the red sub-pixel may include a color material having a red wavelength band. The scattering pattern SCP provided in the green sub-pixel may include a color material having a green wavelength band. Furthermore, the scattering pattern SCP provided in the blue sub-pixel may include a color material having a blue wavelength band. Specifically, the upper color filter (CFU) may include a color material having the same wavelength band as the color of the scattering pattern SCP.

[0079] The thickness of the scattering pattern SCP may be the same as or smaller than the thickness of the lower color filter CFD. For example, when the lower color filter CFD may have two color layers, the scattering pattern SCP may have one color layer, and thus the thickness of the scattering pattern SCP may be smaller than the thickness of the lower color filter CFD. For another example, when the lower color filter CFD has one color layer, the thickness of the scattering pattern SCP may be the same as that of the lower color filter CFD. In this case, during the patterning process, the thickness of the scattering pattern SCP may be slightly smaller than the thickness of the lower color filter CFD.

[0080] In a plan view, the area of the scattering pattern SCP may be the same as or slightly smaller than the emission area EA. Alternatively, the area of the scattering pattern SCP may be the same as or slightly smaller than the area of the upper color filter CFU. However, the present invention is not limited thereto, and the area of the scattering pattern SCP may be slightly larger than the area of the upper color filter CFU.

[0081] A planarization layer PL may be provided on the passivation layer PAS and the upper color filter CFU. The planarization layer PL may be used to flatten the uneven surface of the substrate 110 on which the thin-film transistors ST and DT are formed. To equalize height differences caused by the uneven surface, the planarization layer PL may be formed of an organic material. A pixel contact hole PH may be formed in the passivation layer PAS and the planarization layer PL to expose a portion of the source electrode DS of the drive thin-film transistor DT.

[0082] A pixel electrode ANO is formed on the top surface of the planarization layer PL. The pixel electrode ANO is connected to the source electrode DS of the drive thin film transistor DT via the pixel contact hole PH. Depending on the emission type, the pixel electrode ANO can have different materials or elements. For a bottom emission type, the pixel electrode ANO may include a transparent conductive material. For a top emission type in which light is provided to the upper side facing the substrate 110, the pixel electrode ANO may include a metal material with excellent light reflectivity. Figure 4 A bottom emission type structure is shown.

[0083] A bank BA is formed on the pixel electrode ANO. The bank BA covers the outer peripheral area of the pixel electrode ANO and exposes the middle portion of the pixel electrode ANO. The middle portion of the pixel electrode ANO exposed from the bank BA may be defined as an emission area EA. The bank BA may be provided to cover the non-emission area NEA.

[0084] The emission layer EL is deposited on the substrate 110 having the pixel electrode ANO and the bank BA. The emission layer EL may be formed on the pixel electrode ANO and the bank BA to cover the entire display area AA of the substrate 110.

[0085] A common electrode CAT may be provided on the emission layer EL. The common electrode CAT may be formed on the substrate 110 as a continuous layer across a plurality of pixels P. For example, the common electrode CAT may comprise a stacked layer covering the entire surface of the display area AA. When necessary, the common electrode CAT may cover the entire display area AA and extend to the non-display area NDA. Not shown in the figure, an encapsulation layer may also be provided on the common electrode CAT. The encapsulation layer may have a single-layer structure or a multi-layer structure having organic layers and inorganic layers alternately stacked on each other.

[0086] Referring to the cross-sectional structure of the light-emitting display device according to the present disclosure, the substrate 110 may include a display area AA and a non-display area NDA. The display area AA may include an emission area EA and a non-emission area NEA. In detail, the display area AA may include a plurality of pixels P. Each pixel P may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. The emission area EA may include an upper color filter CFU having any one of at least three color layers (e.g., a first color layer, a second color layer, and a third color layer) for presenting a video image. The non-emission area NEA may include a lower color filter CFD having two stacked color layers, the two color layers including at least two different color layers among the three color layers (e.g., a first color layer, a second color layer, and a third color layer) for presenting a video image.

[0087] Since the lower color filter CFD, which is configured with at least two different color layers, is disposed in the non-emissive area NEA, external light incident from the outside may not pass through the lower color filter CFD but may instead be absorbed by the lower color filter CFD. In other words, reflection of external light by the metal material disposed in the non-emissive area NEA can be suppressed. Therefore, distortion of image information provided by the emissive area EA due to reflection of external light can be prevented.

[0088] As an example, the first color layer CL1 for the lower color filter CFD may be blue, and the second color layer CL2 may be red. As another example, the first color layer CL1 for the lower color filter CFD may be green, and the second color layer CL2 may be red or blue. As yet another example, the lower color filter CFD may be made by stacking the three color layers used in the display device. In any case, the upper color filter CFU may be any one of red, green, and blue.

[0089] In the emission area EA, a scattering pattern SCP having the same color material as the upper color filter CFU may be provided below the upper color filter CFU on the same layer as the lower color filter CFD. When external light is incident on the emission area EA, the external light may be scattered by the scattering pattern SCP, thereby significantly reducing the amount of light reflected by the common electrode CAT of the emission area EA.

[0090] In addition, a transparent insulating layer HRL having a higher refractive index than the upper color filter CFU may be provided below the upper color filter CFU. For example, the refractive index of the upper color filter CFU may be 1.4 to 1.6 (in some examples, 1.5). The transparent insulating layer HRL may be formed of a transparent insulating material having a refractive index of 1.8 to 1.9 (in some examples, 1.9). In this case, the light provided from the emission layer EL can be concentrated when passing through the upper color filter CFU (i.e., the lower refractive layer) and the transparent insulating layer HRL (i.e., the higher refractive layer). Therefore, the colors from adjacent sub-pixels are not mixed, and thus the color purity can be improved. Therefore, degradation of image quality due to external light reflection can be prevented, and image information with high color purity can be provided.

[0091] Furthermore, in the lower color filter CFD, only one specific color layer can remain corresponding to the cutting area CA. In this case, the color layer provided at the cutting area CA can include a color material having a wavelength corresponding to the wavelength of the laser used in the repair process (or cutting process). The laser used in the repair process can be transmitted only to the cutting area CA to perform the cutting process. When the laser is irradiated to areas other than the cutting area CA, since the color layer has a different color than the laser, the laser does not pass through the lower color filter CFD. Therefore, it is possible to prevent undesirable problems caused by improper laser irradiation during the repair process, such as disconnection of normal lines.

[0092] In the above-described light-emitting display device according to the present disclosure, the lower color filter CFD provided in the non-emitting area NEA may include two stacked color layers having different colors from each other, namely, a first color layer CL1 and a second color layer CL2. However, this is not limited to this, and any one color layer may be provided. In this case, the lower color filter CFD may include a color material having a wavelength corresponding to the wavelength of the laser used in the repair process (or cutting process).

[0093] When the lower color filter includes two different color layers, the effect of suppressing external light reflection can be maximized. However, when the cutting area CA may be required, pattern processing may be increased, thereby increasing costs. In contrast, when the lower color filter CFD includes a single color layer, the effect of suppressing external light reflection may be slightly degraded. However, since no special processing is required to prepare the cutting area CA, the processing can be simple and the cost will not increase. Taking these conditions into consideration, the structure of the lower color filter CFD can be selected to suit the manufacturing process and product objectives.

[0094] The above description focuses on a structure in which the scattering pattern SCP is arranged below the upper color filter CFU in the emission area EA. However, this is not limiting and the scattering pattern SCP may not be included. As another example, the scattering pattern SCP may be made of a transparent material. In this case, the scattering effect can be enhanced by forming a material having a different refractive index than the transparent insulating layer HRL, for example, a material having a lower refractive index than the transparent insulating layer HRL.

[0095] In the following, reference is made to Figure 5 , a cross-sectional structure at the upper right corner where the gate driver 200 may be located in the display device will be described. Figure 5 It is along Figure 1 An enlarged cross-sectional view of a cutting line II-II' in FIG. 1 shows the structure of a bottom emission type light emitting display device according to an exemplary aspect of the present disclosure.

[0096] Refer again Figure 1 The substrate 110 of the light-emitting display device according to the present disclosure includes a display area AA and a non-display area NDA. The display area AA may include a plurality of pixels P arranged in a matrix. The non-display area NDA may be disposed above and to the right of the display area AA. The gate driver 200 may be disposed to the right of the display area AA. Figure 5 The structures of the third sub-pixel SP3 and elements surrounding the third sub-pixel SP3 in the pixel P disposed at the right corner of the display area AA are shown.

[0097] Reference Figure 5The non-display area NDA is disposed at the upper and right sides of the third sub-pixel SP3. Between the non-display areas NDA, the display area AA including the emission area EA of the third sub-pixel SP3 is disposed.

[0098] The lower color filter CFD may be disposed on the substrate 110 at the non-display area NDA. The lower color filter CFD may include a first color layer CL1 and a second color layer CL2 sequentially stacked. The scattering pattern SCP may be disposed on the substrate 110 in the display area AA.

[0099] A transparent insulating layer HRL may be disposed on the substrate 110 having the lower color filter CFD and the scattering pattern SCP. The transparent insulating layer HRL may be a buffer layer. The transparent insulating layer HRL may have a transparency of 95% or more.

[0100] On the transparent insulating layer HRL, in the display area AA, even if Figure 5 Although not shown, a switching thin film transistor ST and a driving thin film transistor DT may also be formed. At the gate driver 200 disposed on the right side of the non-display area NDA, a gate driving element GIP may be formed on the transparent insulating layer HRL. The gate driving element GIP may have the same structure as the switching thin film transistor ST and the driving thin film transistor DT.

[0101] For example, the gate driving element GIP may include a semiconductor layer stacked sequentially on a transparent insulating layer HRL, a gate insulating layer GI covering the semiconductor layer, a gate electrode overlapping the semiconductor layer on the gate insulating layer GI, an intermediate insulating layer ILD covering the gate electrode, a source electrode contacting one side of the semiconductor layer on the intermediate insulating layer ILD, a drain electrode contacting the other side of the semiconductor layer on the intermediate insulating layer ILD, and a passivation layer PAS covering the source and drain electrodes.

[0102] A planarization layer PL extending from the display area AA may be disposed on the gate driving element GIP. A bank BA may be formed on the planarization layer PL.

[0103] The emission layer EL and the common electrode CAT provided in the display area AA may extend to the non-display area NDA. However, the present invention is not limited thereto, and the emission layer EL and the common electrode CAT may extend only to some portions of the non-display area NDA. In particular, the common electrode CAT may extend further than the emission layer EL and may be formed to completely cover the emission layer EL.

[0104] Reference Figure 5 In the display area AA, the light emitting diode OLE may be disposed at the emission area EA, the upper color filter CFU may be disposed below the light emitting diode OLE, and the scattering pattern SCP may be disposed below the upper color filter CFU.

[0105] In contrast, a lower color filter CFD can be provided in the non-display area (NDA). Specifically, the lower color filter CFD can be provided below a metal component, such as the gate driver element GIP. Therefore, externally incident light can be absorbed by the lower color filter CFD. When reflected light occurs due to the metal material, the lower color filter CFD can absorb the reflected light. Therefore, external light reflection can be effectively and significantly suppressed. Consequently, the lower color filter CFD can prevent distortion of the optical information provided by the light-emitting diode (OLE) due to external light reflection.

[0106] In the following, reference is made to Figure 6 , a cross-sectional structure of a lower portion of a display device provided with the pad portion 300 will be described. Figure 6 It is along Figure 1 The enlarged cross-sectional view of the cutting line III-III' in FIG. 1 shows the structure of the bottom emission type light emitting display device according to an exemplary aspect of the present disclosure. Figure 6 In the following description, the same elements as those described above may be briefly described or not repeated.

[0107] Refer again Figure 1 The substrate 110 of the light-emitting display device according to the present disclosure includes a display area AA and a non-display area NDA. The display area AA may include a plurality of pixels P arranged in a matrix. The non-display area NDA may be disposed at the lower outer side of the display area AA. The pad portion 300 may be disposed at the non-display area NDA disposed at the lower side. Figure 6 The structures of the second sub-pixel SP2 and elements surrounding the second sub-pixel SP2 in the pixel P disposed at the lower outer side of the display area AA are shown.

[0108] Reference Figure 6 , the non-display area NDA may be provided at the lower outer side of the second sub-pixel SP2. The second sub-pixel SP2 may have the same Figure 4 Therefore, the detailed structure of the second sub-pixel SP2 will not be repeated.

[0109] In a non-display area NDA disposed at a lower side of the substrate 110, a lower color filter CFD may be disposed on the substrate 110. The lower color filter CFD may include a first color layer CL1 and a second color layer CL2 sequentially stacked.

[0110] A transparent insulating layer HRL may be deposited on the substrate 110 having the lower color filter CFD. The transparent insulating layer HRL may be a buffer layer. The transparent insulating layer HRL may have a transparency of 95% or more.

[0111] The data line DL may extend on the transparent insulating layer HRL to a pad portion 300 provided in the non-display area NDA located at the lower side of the substrate 110. The link line LK may be connected to an end of the data line DL. Figure 6 , a data line DL is shown, a data pad may be provided at an end of the data line DL, and the data pad may be connected to a link line LK. The link line LK may include a link pad connected to a flexible circuit film attached to the pad portion 300. Figure 6 , some portions of the data lines DL and the link lines LK are shown.

[0112] On the transparent insulating layer HRL, a gate insulating layer GI and an intermediate insulating layer ILD may be sequentially deposited. On the intermediate insulating layer ILD, a data line DL connected to the source electrode SS of the switching thin film transistor ST may be disposed. Figure 6 In FIG. 1 , only the driving thin film transistor DT connected to the light emitting diode OLE is shown. The structure of the switching thin film transistor ST can be referred to as Figure 4 .

[0113] A passivation layer PAS may be deposited on the data line DL. A planarization layer PL may be deposited on the passivation layer PAS. A link line LK may be disposed on the planarization layer. The link line LK may be made of the same material as the pixel electrode ANO and disposed on the same layer as the pixel electrode ANO. However, the present invention is not limited thereto, and the link line LK may be made of a metal material different from that of the pixel electrode ANO. Considering that the link line LK is an element for transmitting signals, it is desirable that the link line LK be made of a metal material having low line resistance.

[0114] The bank BA may be formed on the link line LK. The emission layer EL and the common electrode CAT formed in the display area AA may extend to the non-display area NDA. However, this is not limited thereto, and the emission layer EL and the common electrode CAT may only extend to portions of the non-display area NDA. In particular, the common electrode CAT may extend further than the emission layer EL and may be formed to completely cover the emission layer EL.

[0115] Reference Figure 6 In the display area AA, the light emitting diode OLE may be disposed at the emission area EA, the upper color filter CFU may be disposed below the light emitting diode OLE, and the scattering pattern SCP may be disposed below the upper color filter CFU.

[0116] In contrast, a lower color filter CFD can be provided in the non-display area NDA. Specifically, the lower color filter CFD can be provided below a metal component, such as the link line LK. Therefore, light incident from the outside can be absorbed by the lower color filter CFD. When reflected light occurs due to the metal material, the lower color filter CFD can absorb the reflected light. Therefore, external light reflection can be effectively and significantly suppressed. Consequently, the lower color filter CFD can prevent the optical information provided by the light-emitting diode OLE from being distorted due to external light reflection.

[0117] In the following, reference is made to Figure 7 , the structure of a light-emitting display device according to another exemplary aspect of the present disclosure will be described. Figure 7 is an enlarged plan view showing the structure of one sub-pixel included in a light-emitting display device according to another exemplary aspect of the present disclosure. The structure of the light-emitting display device according to another exemplary aspect may be similar to Figure 3 The light emitting display devices shown are very similar.

[0118] Figure 7 The light emitting display device shown may include a repair electrode RE having an extruded shape extending from the pixel electrode ANO formed in the emission area EA to the non-emission area NEA. Figure 7 The illustrated light emitting display device may further include a repair line RL overlapping the repair electrode RE and extending from the repair electrode RE to another pixel electrode.

[0119] When a driving element for driving any one sub-pixel SP is damaged, the semiconductor layer SA can be cut through a cutting area CA overlapping a portion of the semiconductor layer SA of the switching thin film transistor ST, so that the damaged driving element can be disconnected from the light-emitting diode OLE. In this case, the light-emitting diode OLE connected to the damaged driving element does not operate, so it can be seen as a "dark spot."

[0120] In some cases, a subpixel SP with a damaged driver element may not continue to function as a dark spot, but may instead be restored or revived by connecting to another adjacent subpixel SP of the same color, allowing it to operate like a normal subpixel. To this end, a repair line RL may be provided between the two subpixels SP, and each end of the repair line RL may be arranged to overlap with an end of the repair electrode RE. In other words, at least two subpixels SP assigned the same color may be configured as a pair that share a single repair line RL.

[0121] With this structure, if any sub-pixel SP is defective, the semiconductor layer SA of the sub-pixel SP can be cut by performing a cutting process on the cutting area CA that overlaps with the semiconductor layer SA of the switching thin-film transistor ST, thereby disconnecting the damaged driving element from the light-emitting diode OLE. Furthermore, the repair electrode RE provided at the defective sub-pixel SP can be connected to the repair line RL, and the repair electrode RE of the normal sub-pixel SP paired with the defective sub-pixel SP can also be connected to the repair line RL. As a result, the defective sub-pixel SP can be restored to operate normally like a normal sub-pixel SP.

[0122] Here, a welding process can be applied in which a laser is irradiated onto the repair electrode RE overlapping the repair line RL. To this end, a welding area WA can be provided in the portion of the non-emission area NEA where the repair electrode RE is provided. Since the welding area WA is provided in the non-emission area NEA, the lower color filter CFD can overlap with the welding area WA. In the region of the lower color filter CFD corresponding to the welding area WA, only one of the first color layer CL1 and the second color layer CL2 can be provided.

[0123] For example, the welding area WA may include a first color layer CL1 but not a second color layer CL2. Here, the color layer provided in the welding area WA may have a color band that can pass the wavelength of the laser light irradiated into the welding area WA. For example, when a blue laser is used for welding, the first color layer CL1 provided in the welding area WA may include a color material having a blue wavelength band. As another example, when a green laser is used for welding, the first color layer CL1 provided in the welding area WA may include a color material having a green wavelength band.

[0124] Other configurations and Figure 3 The configuration described in is the same, so the repeated description is omitted. Figure 7 The light-emitting display device shown may include a lower color filter CFD including at least two different color layers in the non-emitting area NEA. Light incident from the outside may not pass through the lower color filter CFD and may be absorbed by the lower color filter CFD. Therefore, external light reflection by the metal material provided in the non-emitting area NEA can be suppressed. Therefore, image information provided from the emission area EA can be prevented from being distorted due to reflection of external light.

[0125] Alternatively, the lower color filter CFD may retain only one color layer corresponding to the cutting area CA and the welding area WA. In this case, the color layer provided in the cutting area CA and the welding area WA may be configured to include a color material having a wavelength corresponding to the wavelength of the laser used in the repair process. Therefore, the laser used in the repair process can be transmitted only to the cutting area CA and / or the welding area WA, allowing the cutting and / or welding processes to be performed. When the laser is irradiated to areas other than the cutting area CA and the welding area WA, the laser may not pass through the lower color filter CFD due to the different color of the color layer. Therefore, it is expected to prevent undesirable problems caused by improper laser irradiation during the repair process, such as disconnection or melting of normal wires.

[0126] Note that although the light-emitting display device according to the present disclosure is described herein primarily with reference to an exemplary embodiment in which an upper color filter is provided in the emission region, in some embodiments, the light-emitting display device may not include an upper color filter, in which case, for example, the light-emitting element (e.g., a light-emitting diode) provided in each sub-pixel may include an emission layer configured to emit light of a color corresponding to the sub-pixel.

[0127] The features, structures, effects, etc. described in the above example embodiments of the present disclosure are included in at least one example embodiment of the present disclosure and are not necessarily limited to one example embodiment. In addition, the features, structures, effects, etc. described in at least one example embodiment can be implemented by those skilled in the art to which the present disclosure relates in combination or modification with respect to other example embodiments. Therefore, such combinations and modifications should be interpreted as being included within the scope of the present disclosure.

[0128] It will be apparent to those skilled in the art that various substitutions, modifications and variations may be made within the scope of the present disclosure without departing from the spirit and scope of the present disclosure. Therefore, the embodiments of the present disclosure are intended to cover various substitutions, modifications and variations of the present disclosure, as long as such substitutions, modifications and variations fall within the scope of the appended claims and their equivalents. These and other changes may be made to the embodiments in light of the above detailed description. Generally, in the appended claims, the terms used should not be interpreted as limiting the claims to the specific example embodiments disclosed in the specification and claims, but should be interpreted as including all possible embodiments and the full range of equivalents to which such claims are entitled. Therefore, the claims are not limited by the present disclosure.

Claims

1. A light-emitting display device, comprising: substrate; a display area disposed at a middle portion of the substrate and including an emission area and a non-emission area; a first color filter disposed in the emission region and including at least one of a first color layer, a second color layer, and a third color layer; a second color filter disposed in the non-emission region and including at least one of a first color layer, a second color layer, and a third color layer; a driving element disposed on the second color filter in the non-emitting area; as well as A light emitting element is provided on the first color filter in the emission region and is connected to the driving element.

2. The light-emitting display device according to claim 1, wherein Each of the first color layer, the second color layer, and the third color layer includes a color material having color bands different from each other.

3. The light-emitting display device according to claim 2, wherein: The first color layer includes a color material having a red wavelength band, Wherein, the second color layer includes a color material having a green wavelength band, and Wherein, the third color layer includes a color material with a blue wavelength band.

4. The light-emitting display device according to claim 1, wherein: The second color filter includes a blue color layer and a red color layer stacked sequentially.

5. The light-emitting display device according to claim 1, wherein The second color filter includes a blue color layer and a green color layer stacked sequentially. The light-emitting display device according to claim 1 , wherein: The second color filter includes a red color layer and a green color layer stacked sequentially.

7. The light-emitting display device according to claim 1, wherein: The second color filter includes a red color layer, a green color layer, and a blue color layer that are sequentially stacked.

8. The light-emitting display device according to claim 1, further comprising: a transparent insulating layer disposed below the first color filter in the emission region; as well as A scattering pattern is provided below the transparent insulating layer.

9. The light-emitting display device according to claim 8, wherein: The scattering pattern includes the same color material as the first color filter.

10. The light-emitting display device according to claim 8, wherein: The transparent insulating layer has a higher refractive index than the first color filter.

11. The light-emitting display device according to claim 10, wherein: The first color filter has a refractive index of 1.5, and Wherein, the transparent insulating layer has a refractive index of 1.

9.

12. The light-emitting display device according to claim 1, wherein: The driving element includes a repair portion, and The second color filter provided at the region corresponding to the repair portion includes any one of the first color layer, the second color layer, and the third color layer.

13. The light-emitting display device according to claim 12, wherein: The second color filter provided at a region corresponding to the repair portion includes a color layer including a color material having the same wavelength as the laser light irradiated to the repair portion.

14. The light-emitting display device according to claim 1, further comprising: a buffer layer disposed on the second color filter, wherein the driving element is formed on the buffer layer; a passivation layer on the driving element, wherein the first color filter is disposed on the passivation layer; a planarization layer disposed on the passivation layer and the first color filter; a pixel electrode disposed on the planarization layer, connected to the driving element, and corresponding to the emission area; a bank disposed on the pixel electrode to define the emission area; an emission layer on the pixel electrode and the bank; and A common electrode is provided on the emission layer.

15. The light-emitting display device according to claim 14, further comprising: A scattering pattern is provided at the same layer as the second color filter and below the first color filter, and has the same color as the first color filter.

16. A light-emitting display device, comprising: A substrate, the substrate including a display area, the display area including an emission area and a non-emission area; a second color filter disposed in the non-emission region and comprising at least one color layer; a driving element disposed on the second color filter in the non-emitting area; as well as A light emitting element is provided in the emission region and is connected to the driving element. The light emitting display device according to claim 16 , further comprising a scattering pattern disposed in the emission area.

18. The light-emitting display device according to claim 17, a first color filter disposed in the emission region and below the light emitting element; and a transparent insulating layer, the transparent insulating layer being disposed below the first color filter, in, The first color filter has a refractive index of 1.4 to 1.6, and Wherein, the transparent insulating layer has a refractive index of 1.8 to 1.9.

Images