Solar cell, and deposition method and deposition equipment of solar cell

Abstract

The invention discloses a solar cell and a deposition method and deposition equipment of the solar cell, and relates to the technical field of solar cells, the solar cell comprises a silicon substrate, a first carrier collection layer is arranged in a first area of a first main surface of the silicon substrate, and a second carrier collection layer is arranged in a second area of a second main surface of the silicon substrate; a second carrier collection layer and a passivation layer are arranged in a second region of the first main surface of the silicon substrate; the first areas and the second areas are alternately arranged and interval areas are arranged between the first areas and the second areas; the conduction types of the first carrier collection layer and the second carrier collection layer are opposite; the passivation layer covers the main surface and the side surface of the first carrier collection layer, the main surface and the side surface of the second carrier collection layer, and the spacer region. According to the embodiment, the passivation capability of the side edge of the first carrier collection layer and the side edge of the second carrier collection layer can be effectively improved, and the overall passivation performance of the solar cell is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a solar cell, a deposition method for a solar cell, and a deposition device. Background Art

[0002] For existing back-contact solar cells, it is usually necessary to prepare a passivation layer on the outside of the carrier collection layer and the spacer area to improve the overall passivation performance of the solar cell. However, due to the limitations of existing deposition processes, the passivation layer can only be deposited from top to bottom, so the formed passivation layer only exists on the upper surface of the carrier collection layer and the spacer area. For example, Figure 1 As shown, the passivation layer 04 can only be deposited on the surface along the direction of gas deposition. Since the thickness of the deposited layer is much smaller than the depth of the spacing region, an effective passivation layer cannot be formed on the sidewall portion of the spacing region, so that the overall passivation performance of the solar cell still needs to be improved. Summary of the Invention

[0003] In view of this, an embodiment of the present invention provides a solar cell, a deposition method for a solar cell, and a deposition device. By setting a passivation layer covering the main surface and side surfaces of the first carrier collection layer, the main surface and side surfaces of the second carrier collection layer, and the spacing area, the passivation ability of the side surfaces of the first carrier collection layer and the second carrier collection layer can be effectively improved, thereby improving the overall passivation performance of the solar cell.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0005] In a first aspect, the present invention provides a solar cell comprising: a silicon substrate, a first carrier collection layer being arranged in a first region of a first main surface of the silicon substrate, a second carrier collection layer being arranged in a second region of the first main surface of the silicon substrate, and a passivation layer; wherein the first regions and the second regions are alternately arranged with a spacing region provided therebetween; the first carrier collection layer and the second carrier collection layer have opposite conductivity types; the passivation layer covers the main surface and side surfaces of the first carrier collection layer, the main surface and side surfaces of the second carrier collection layer, and the spacing region.

[0006] Optionally, the thickness of the portion of the passivation layer corresponding to the main surface of the first carrier collection layer and / or the main surface of the second carrier collection layer and / or the spacing area is 3nm~7nm; and / or, the thickness of the portion of the passivation layer corresponding to the side of the first carrier collection layer is 3nm~7nm; and / or, the thickness of the portion of the passivation layer corresponding to the side of the second carrier collection layer is 3nm~7nm.

[0007] Optionally, the first carrier collection layer includes a tunneling oxide layer stacked from the inside to the outside and a first doping layer doped with a first doping element; or, the first carrier collection layer includes an intrinsic polysilicon layer stacked from the inside to the outside and a first doping layer doped with the first doping element; the second carrier collection layer includes a tunneling oxide layer stacked from the inside to the outside and a second doping layer doped with a second doping element; wherein the second doping element is of opposite doping type to the first doping element; or, the second carrier collection layer includes an intrinsic polysilicon layer stacked from the inside to the outside and a second doping layer doped with the second doping element.

[0008] In a second aspect, the present invention provides a deposition method for a solar cell, comprising: step 1, placing a cell substrate in a deposition chamber of a deposition device; step 2, controlling the deposition device to release deposition gas, using the deposition device to control the circumferential rotation of the cell substrate, and depositing a passivation layer with a predetermined thickness on the side and outer side of the main surface of the first carrier collection layer included in the cell substrate, the side and outer side of the main surface of the second carrier collection layer, and the spacing area.

[0009] In a third aspect, the present invention provides a deposition device for solar cells, comprising: a driving part, a deposition part and a support part; wherein the support part is used to place a battery substrate; the driving part applies a driving force to the support part, adjusts the position of the support part relative to the deposition part, and drives the support part to rotate when the support part is located below the deposition part, so that the support part rotates in its circumferential direction; the deposition part is used to deposit a film layer for the battery substrate placed on the support part.

[0010] The technical solution of the first aspect of the above invention has the following advantages or beneficial effects: by setting a passivation layer covering the main surface and side surfaces of the first carrier collection layer, the main surface and side surfaces of the second carrier collection layer, and the spacing area, the passivation ability of the side surfaces of the first carrier collection layer and the second carrier collection layer can be effectively improved, thereby improving the overall passivation performance of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The accompanying drawings are provided for a better understanding of the present invention and are not intended to limit the present invention.

[0012] Figure 1 It is a schematic diagram of the cross-sectional structure of a solar cell according to the prior art;

[0013] Figure 2 is a schematic diagram of a cross-sectional structure of a solar cell according to an embodiment of the present invention;

[0014] Figure 3 is a schematic diagram of the main process of a deposition method for a solar cell according to an embodiment of the present invention;

[0015] Figure 4 is a schematic diagram of a deposition process of a solar cell deposition method according to an embodiment of the present invention;

[0016] Figure 5 is a schematic flow chart of a first deposition cycle according to an embodiment of the present invention;

[0017] Figure 6 is a schematic diagram of a specific process of a first deposition cycle according to an embodiment of the present invention;

[0018] Figure 7 is a schematic diagram of a process for depositing a passivation layer according to an embodiment of the present invention;

[0019] Figure 8 is a schematic diagram of the rough structure of a deposition device applied to a solar cell according to an embodiment of the present invention;

[0020] Figure 9 is a schematic diagram of a specific structure of a driving unit according to an embodiment of the present invention;

[0021] Figure 10 A schematic diagram of the specific structure of the lifting assembly according to an embodiment of the present invention in a non-lifted state;

[0022] Figure 11 A schematic diagram of the specific structure of the lifting assembly in a raised state according to an embodiment of the present invention;

[0023] Figure 12 A schematic diagram of the positional relationship between the threaded assembly and the housing according to an embodiment of the present invention;

[0024] Figure 13 A schematic diagram of the overall structure of a lifting sleeve according to an embodiment of the present invention;

[0025] Figure 14 A schematic diagram of a thread structure of a threaded assembly according to an embodiment of the present invention;

[0026] Figure 15 The specific structure of the connecting assembly according to the embodiment of the present invention and the positional relationship between the connecting assembly and the supporting portion;

[0027] Figure 16 A schematic diagram of the lower surface structure of a support portion according to an embodiment of the present invention;

[0028] Figure 17 FIG. 4 is a schematic flow chart of a second deposition cycle according to an embodiment of the present invention.

[0029] The reference numerals are as follows:

[0030] 01-silicon substrate; 02-first carrier collection layer; 03-second carrier collection layer; 04-passivation layer;

[0031] 001-battery matrix;

[0032] 1-driving unit; 11-lifting structure; 111-power assembly; 112-lifting assembly; 1121-lifting sleeve; 1122-clip; 1123-housing; 1124-threaded assembly; 1125-electromagnetic component; 113-connecting assembly; 1131-main body; 1132-connecting shaft;

[0033] 12- transmission structure; 121- transmission frame; 122- conveyor belt;

[0034] 2- sedimentation part;

[0035] 3-support portion; 31-connection through hole;

[0036] 100-slideway; 200-slider; 300-spindle; 400-auxiliary shaft; 500-base; 600-rotating thread; 700-flat thread. DETAILED DESCRIPTION

[0037] For the convenience and clarity of describing the deposition apparatus for solar cells of the present invention, exemplary embodiments of the present invention are described below with reference to the accompanying drawings, including various details of the embodiments to facilitate understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted from the following description.

[0038] Figure 2 FIG. 1 shows a schematic cross-sectional structure diagram of a solar cell provided in the first aspect of an embodiment of the present invention, as shown in FIG. Figure 2As shown, it includes: a silicon substrate 01, a first carrier collection layer 02 disposed in a first region of the first main surface of the silicon substrate 01, a second carrier collection layer 03 disposed in a second region of the first main surface of the silicon substrate 01, and a passivation layer 04; wherein the first and second regions are arranged alternately with a spacing region disposed therebetween; the first carrier collection layer 02 and the second carrier collection layer 03 have opposite conductivity types; and the passivation layer 04 covers the main surface and side surfaces of the first carrier collection layer 02, the main surface and side surfaces of the second carrier collection layer 03, and the spacing region. The main surface can be understood as the surface away from the silicon substrate 01. Specifically, the passivation layer 04 covering the main surface of the first carrier collection layer 02, the main surface of the second carrier collection layer 03, and the spacing region is a horizontally extending passivation layer, while the passivation layer covering the side surfaces of the first carrier collection layer 02 and the side surfaces of the second carrier collection layer 03 is a vertically extending passivation layer. It should be noted that the spacing region is formed as a groove relative to the first carrier collecting layer 02 and the second carrier collecting layer 03 , so that the first carrier collecting layer 02 and the second carrier collecting layer 03 have a main surface and a side surface.

[0039] What needs to be explained is that Figure 1 and Figure 2 The carrier collection layer and the spacer region are both conventional structures of existing BC batteries. Since the first carrier collection layer 02 and the second carrier collection layer 03 have opposite conductivity types, a spacer region is required to avoid a short circuit between the first carrier collection layer 02 and the second carrier collection layer 03. Specifically, the present invention does not improve the structure of the carrier collection layer and the spacer region. The main improvement lies in the location of the outer passivation layer 04. Figure 2 and Figure 1 It can be seen that compared with the solar cell in the prior art, the embodiment of the present invention has a passivation layer 04 prepared on the side of the first carrier collection layer 02 adjacent to the spacing area and the side of the second carrier collection layer 03 adjacent to the spacing area, which can effectively cover the periphery of the first carrier collection layer 02 and the second carrier collection layer 03, thereby improving the overall passivation performance of the solar cell.

[0040] In an optional embodiment, the thickness of the portion of the passivation layer 04 corresponding to the main surface of the first carrier collection layer 02 and / or the main surface of the second carrier collection layer 03 and / or the spacing area is 3nm~7nm, for example 3nm, 4nm, 5nm, 6nm, 7nm, etc. It can be understood that the passivation layer 04 located outside the main surface of the first carrier collection layer 02, outside the main surface of the second carrier collection layer 03 and the spacing area is usually obtained by synchronous deposition based on the same deposition process, so the thickness of the portion of the passivation layer 04 corresponding to the outside of the main surface of the first carrier collection layer 02, outside the main surface of the second carrier collection layer 03 and the spacing area is usually the same.

[0041] In an optional embodiment, the thickness of the portion of the passivation layer 04 corresponding to the side of the first carrier collection layer 02 is 3 nm to 7 nm, for example, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, etc.; the thickness of the portion of the passivation layer 04 corresponding to the side of the second carrier collection layer 03 is 3 nm to 7 nm, for example, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, etc. It will be understood that the first carrier collection layer 02 and the second carrier collection layer 03 each include two symmetrically arranged side surfaces. Since the different side surfaces are actually formed through different deposition processes (described in detail later in the preparation method), the deposition thickness of the two side surfaces can be the same or different. However, since the side surfaces on the same side of the first carrier collection layer 02 and the second carrier collection layer 03 are formed through the same deposition process, the deposition thickness of the side surfaces on the same side of the first carrier collection layer 02 and the second carrier collection layer 03 is the same.

[0042] It should be noted that different deposition processes are required for different sides of the first carrier collection layer 02 and the second carrier collection layer 03, and each deposition process is performed on the main surfaces and spacing areas of the first carrier collection layer 02 and the second carrier collection layer 03. Therefore, the thickness of the passivation layer on the main surfaces and spacing areas of the first carrier collection layer 02 and the second carrier collection layer 03 can be the sum of the passivation layers on different sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0043] Regarding the specific structures of the first carrier collection layer 02 and the second carrier collection layer 03, in one optional embodiment, the first carrier collection layer 02 includes a tunneling oxide layer and a first doping layer doped with a first doping element stacked from the inside out; or, the first carrier collection layer 02 includes an intrinsic polysilicon layer and a first doping layer doped with the first doping element stacked from the inside out. The first doping element may be a p-type doping element, such as boron. In a further optional embodiment, the second carrier collection layer 03 includes a tunneling oxide layer and a second doping layer doped with a second doping element stacked from the inside out; the second doping element has a doping type opposite to that of the first doping element; or, the second carrier collection layer 03 includes an intrinsic polysilicon layer and a second doping layer doped with a second doping element stacked from the inside out; the second doping element has a doping type opposite to that of the first doping element. For example, the second doping element may be an n-type doping element, such as phosphorus. For the tunneling oxide layer and the intrinsic polysilicon layer, the preparation temperature and preparation conditions of the two are different during the preparation process, but this does not affect the current collection performance of the first carrier collection layer finally obtained. Therefore, they can be selected according to the limitations of the actual preparation process, and the present invention does not make specific limitations on this.

[0044] In summary, the embodiment of the present invention provides an application to a solar cell, which can effectively improve the passivation ability of the side edges of the first carrier collection layer and the second carrier collection layer by setting a passivation layer covering the main surface and side edges of the first carrier collection layer, the main surface and side edges of the second carrier collection layer, and the spacing area, thereby improving the overall passivation performance of the solar cell.

[0045] A second aspect of an embodiment of the present invention provides a deposition method for a solar cell, such as Figure 3 Shown, including:

[0046] Step S301, placing the battery substrate 001 in a deposition chamber of a deposition device;

[0047] In step S302, the deposition device is controlled to release deposition gas, and the deposition device is used to control the circumferential rotation of the battery substrate 001 to deposit a passivation layer 04 having a predetermined thickness on the side and outer side of the main surface of the first carrier collection layer 02, the side and outer side of the main surface of the second carrier collection layer 03, and the spacing area included in the battery substrate 001.

[0048] Among them, the battery matrix 001 can be understood as Figure 1 and Figure 2 The cell structure before the passivation layer 04 is deposited, that is, the first carrier collection layer 02, the second carrier collection layer 03 and the substrate of the spacing region are arranged on the front side of the silicon substrate 01.

[0049] In the deposition process of the prior art, the deposition equipment itself does not have a rotation function, so the battery substrate 001 is usually in a static state during the deposition process, and the deposition gas such as Figure 1 as well as Figure 2 Deposition is carried out downward in the direction of the arrow in the figure, so that deposition cannot be carried out on the side surfaces of the first carrier collection layer 02 and the second carrier collection layer 03. A horizontal passivation layer can only be formed on the main surfaces of the first carrier collection layer 02, the second carrier collection layer 03, and the spacing area. Since the thickness of the passivation layer is less than the height of the first carrier collection layer 02 and the second carrier collection layer 03 protruding from the spacing area, the sides of the first carrier collection layer 02 and the second carrier collection layer 03 cannot be completely covered by the passivation layer. The embodiment of the present invention controls the circumferential rotation of the battery substrate 001, which will cause centrifugal force on the deposition gas during the rotation process, such as Figure 4 As shown, the deposition gas is caused to move in the direction of the centrifugal force. Therefore, during the deposition process, deposition can be performed on different sides of the first carrier collection layer 02 and the second carrier collection layer 03 respectively through circumferential rotation in different directions, and finally, a longitudinally extended passivation layer 04 is formed through circumferential rotation in different directions, thereby achieving complete deposition on both sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0050] In an optional embodiment, step S302 may include N first deposition cycles and N second deposition cycles, wherein the first deposition cycle is as follows: Figure 5 As shown, specifically including:

[0051] Step S501: Controlling a deposition device to release a first deposition gas, and using the deposition device to control the battery substrate 001 to rotate circumferentially in a first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side surface of the first carrier collection layer 02, the outer side of the main surface and the first side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0052] Step S502, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release the purge gas to purge the surface of the intermediate deposition layer;

[0053] Step S503: Controlling the deposition device to release the second deposition gas, and using the deposition device to control the battery substrate 001 to rotate circumferentially in a first direction, so as to deposit a passivation layer 04 having a first thickness on the outer side of the main surface and the first side of the first carrier collection layer 02, the outer side of the main surface and the first side of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0054] Step S504 , stopping the rotation of the battery substrate 001 , and controlling the deposition equipment to release the purge gas to purge the surface of the passivation layer.

[0055] It should be noted that currently, materials suitable for passivation layers typically require multi-source preparation (e.g., separate hydrogen and aluminum sources). This means that deposition gases providing different deposition atoms must be introduced sequentially and deposited layer by layer to achieve a complete passivation layer. However, direct contact between deposition gases from different sources can produce unwanted byproducts. Therefore, a purge is required after each deposition gas is introduced to ensure that only one deposition gas is present in the deposition chamber at all times.

[0056] The second deposition cycle Figure 17 Shown, including:

[0057] Step S1701: Controlling a deposition device to release a first deposition gas, and using the deposition device to control the battery substrate 001 to rotate circumferentially in a second direction opposite to the first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side surface of the first carrier collection layer 02, the outer side of the main surface and the first side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0058] Step S1702, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release the purge gas to purge the surface of the intermediate deposition layer;

[0059] Step S1703: Controlling the deposition device to release the second deposition gas, and using the deposition device to control the battery substrate 001 to rotate circumferentially in the second direction to deposit a passivation layer 04 having a first thickness on the outer side of the main surface and the second side surface of the first carrier collection layer 02, the outer side of the main surface and the second side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0060] Step S1704, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release the purge gas to purge the surface of the passivation layer; wherein the predetermined thickness is N times the first thickness.

[0061] It is understood that the processes of the first deposition cycle and the second deposition cycle are essentially the same, differing only in that the directions of circumferential rotation are opposite. This allows the passivation layer to be deposited on two opposing sides of the first carrier collection layer 02 and the second carrier collection layer 03 under the action of different centripetal forces. The first direction can be clockwise and the second direction counterclockwise, or vice versa.

[0062] The following takes the passivation layer 04 as aluminum oxide as an example to specifically describe the deposition process of the above steps S501 to S504. Figure 6 As shown in Figure 1, the process of one deposition cycle in depositing aluminum oxide includes:

[0063] Step S601: Controlling a deposition device to release trimethylaluminum (TMA) and using the deposition device to control the battery substrate 001 to rotate circumferentially in a first direction, wherein the amount of TMA introduced is 300 sccm (standard cubic centimeters per minute) and the introduction time is 10 seconds;

[0064] Step S602, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release nitrogen to purge the surface of the deposited aluminum layer;

[0065] Step S603: Control the deposition device to release water vapor and use the deposition device to control the battery substrate 001 to rotate circumferentially along the first direction, wherein the amount of water vapor introduced is 150 sccm and the introduction time is 10 s;

[0066] Step S604: stop rotating the battery substrate 001 and control the deposition equipment to release nitrogen to purge the surface of the deposited aluminum oxide layer.

[0067] It should be noted that when the passivation layer 04 is aluminum oxide, it is necessary to deposit aluminum elements and oxygen elements separately in order to finally obtain aluminum oxide. Therefore, the deposition gases include trimethylaluminum and water vapor respectively. A deposition cycle also requires multiple gas introductions and multiple purgings to be achieved.

[0068] In an optional embodiment, step S302 includes: performing N consecutive first deposition cycles, followed by N consecutive second deposition cycles; and / or performing the first and second deposition cycles alternately N times. Specifically, in the former, after performing one or more first deposition cycles sequentially, the passivation layer 04 on one side is first formed, and then one or more second deposition cycles are performed to complete the passivation layer 04 on the other side. In the latter, the passivation layer 04 on both sides is simultaneously formed in a single cycle, and then the thickness of the passivation layer 04 on both sides is increased through multiple cycles. Where N is a positive integer, which can be 3 to 5, such as 3, 4, 5, etc. In the actual preparation process, the thickness of the passivation layer 04 can be determined based on the actual required thickness. Typically, the deposition thickness of a first deposition cycle or a second deposition cycle is 0.5 nm to 1 nm, such as 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 1 nm, etc.

[0069] Still taking the deposition of aluminum oxide as an example, the process of performing the first deposition cycle and the second deposition cycle N times in a cross manner is specifically described. Figure 7 Shown, including:

[0070] Step S701: Control the deposition device to release trimethylaluminum (TMA), and use the deposition device to control the battery substrate 001 to rotate circumferentially along a first direction, wherein the amount of TMA introduced is 300 sccm (standard cubic centimeters per minute) and the introduction time is 10 seconds;

[0071] Step S702, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release nitrogen to purge the surface of the deposited aluminum layer;

[0072] Step S703: Control the deposition device to release water vapor and use the deposition device to control the battery substrate 001 to rotate circumferentially along the first direction, wherein the amount of water vapor introduced is 150 sccm and the introduction time is 10 s;

[0073] Step S704, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release nitrogen to purge the surface of the deposited aluminum oxide layer;

[0074] Step S705: Control the deposition device to release trimethylaluminum (TMA), and use the deposition device to control the battery substrate 001 to rotate circumferentially in a second direction opposite to the first direction. The amount of TMA introduced is 300 sccm (standard cubic centimeters per minute) and the introduction time is 10 seconds.

[0075] Step S706, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release nitrogen to purge the surface of the deposited aluminum layer;

[0076] Step S707, controlling the deposition device to release water vapor and using the deposition device to control the battery substrate 001 to rotate circumferentially along the second direction, wherein the amount of water vapor introduced is 150 sccm and the introduction time is 10 s;

[0077] Step S708, stopping the rotation of the battery substrate 001, and controlling the deposition equipment to release nitrogen to purge the surface of the deposited aluminum oxide layer;

[0078] Step S709: loop steps S701-S708 N times.

[0079] In practical applications, the latter one can be preferred ( Figure 7 In the scheme shown in FIG2 , the passivation layer 04 on both sides is prepared synchronously in one deposition cycle. This is because the circumferential rotation in opposite directions in each deposition cycle can increase the flow of air, thereby increasing the uniformity of the deposition of the passivation layer 04.

[0080] In an optional embodiment, after step 301 and before step 302, the process further includes: evacuating the deposition chamber in the deposition equipment and heating the deposition chamber; controlling the deposition equipment to release a clean gas to clean the surface of the battery substrate 001 with the clean gas. Since the deposition gas is usually a flammable or explosive gas and cannot be deposited directly in the air, it is necessary to ensure that the deposition chamber of the deposition equipment is in a vacuum state before releasing the deposition gas. Moreover, it is necessary to release the clean gas to simultaneously clean the deposition chamber and the surface of the battery substrate 001 to ensure that the environment in the chamber is suitable for the deposition of the passivation layer.

[0081] In an optional embodiment, the deposition chamber is evacuated to 1 mbar ~ 10 mbar, for example, 1 mbar, 5 mbar, 10 mbar, etc., and the temperature is raised to 200°C ~ 300°C, for example, 200°C, 250°C, 300°C, etc.; the cleaning gas can be water vapor; the amount of cleaning gas introduced is 100 sccm ~ 300 sccm, for example, 100 sccm, 200 sccm, 300 sccm, etc.; in a further optional embodiment, the cleaning gas introduction time is 50s ~ 80s, for example, 50s, 60s, 70s, 80s, etc.

[0082] In an optional embodiment, in step S302, the deposition equipment controls the circumferential rotation speed of the battery substrate 001 to be 5 rpm / min to 15 rpm / min, for example, 5 rpm / min, 10 rpm / min, 15 rpm / min, etc. If the rotation speed is too fast or too slow, sufficient centrifugal force cannot be generated for the deposition gas in a single deposition cycle, thereby affecting the deposition effect on the sides of the first carrier collection layer 02 and the second carrier collection layer 03.

[0083] In an optional embodiment, the purge gas is nitrogen; the flow rate of the purge gas is 20slm~25slm, for example, 20slm, 21slm, 22slm, 23slm, 25slm, etc.; the purge gas introduction time is 5s~20s, for example, 5s, 10s, 15s, 20s, etc.

[0084] In summary, the deposition method of the solar cell provided by the embodiment of the present invention controls the circumferential rotation of the battery substrate 001 through the deposition equipment, and can utilize the centripetal force generated by the rotation on the deposition gas during the deposition process, so that the deposition gas is displaced and deposited on the sides of the first carrier collection layer 02 and the second carrier collection layer 03, while also not affecting the deposition of the main surface of the first carrier collection layer 02, the main surface of the second carrier collection layer 03 and the passivation layer 04 in the spacing area, thereby obtaining a passivation layer 04 covering the side and main surface outer side of the first carrier collection layer 02, the side and main surface outer side of the second carrier collection layer 03 and the spacing area.

[0085] The deposition method of the solar cell provided by the present invention is described in detail below with reference to examples and comparative examples:

[0086] Example

[0087] A. Load the battery substrate 001 onto the support portion 3 of the deposition equipment, and use the deposition equipment to transfer the battery substrate 001 to the bottom of the deposition portion 2 of the deposition chamber;

[0088] B. Evacuate the chamber to a pressure of 5 mbar and raise the temperature to 260°C.

[0089] C. Stop the vacuum pump and close the valve to check for air leaks in the chamber;

[0090] D. Continuously introduce water vapor into the chamber to pre-clean the surface of the battery substrate 001. The amount of water vapor introduced is 200 sccm and the introduction time is 60 s.

[0091] E. Using the driving unit 1 of the deposition device to control the support unit 3 and the battery substrate 001 to move upward;

[0092] F. Control the support portion 3 to rotate the battery substrate 001 clockwise, and use the deposition portion 2 of the deposition equipment to release trimethylaluminum (TMA) gas. The TMA injection rate is 300 sccm, the injection time is 10 s, and the circumferential rotation speed of the support portion 3 is 10 rpm / min.

[0093] G. Stop rotating the support part 3 and the battery substrate 001, and use the deposition part 2 of the deposition equipment to release nitrogen to clean the pipes and chambers. The nitrogen flow rate is 22 slm and the introduction time is 10 s.

[0094] H. Using the driving unit 1 of the deposition apparatus to control the supporting unit 3 to rotate the battery substrate 001 clockwise, and using the deposition unit 2 of the deposition apparatus to release water vapor (H2O). The water vapor was introduced at a rate of 150 sccm for 10 seconds, and the circumferential rotation speed of the supporting unit 3 was 10 rpm / min.

[0095] I. Stop rotating the support unit 3 and the battery substrate 001, and use the deposition unit 2 of the deposition equipment to release nitrogen to clean the pipes and chambers. The nitrogen flow rate is 22 slm and the introduction time is 10 s.

[0096] J. After looping through step FI three times, adjust the rotation direction in step FI to counterclockwise rotation, and loop through step FI again three times after changing the rotation direction;

[0097] K. After the deposition is completed, the deposition unit 2 of the deposition equipment releases nitrogen to purge and remove excess gas in the chamber;

[0098] L. Use the driving unit 1 of the deposition device to control the support unit 3 and the battery substrate 001 to move downward, and move the battery substrate 001 out from under the deposition unit 2;

[0099] M. Take out the battery matrix 001.

[0100] Comparative Example

[0101] A. Loading the battery substrate 001 into the deposition chamber of the prior art;

[0102] B. Evacuate the chamber to a pressure of 5 mbar and raise the temperature to 260°C.

[0103] C. Stop the vacuum pump and close the valve to check for air leaks in the chamber;

[0104] D. Continuously introduce water vapor into the chamber to pre-clean the surface of the battery substrate 001. The amount of water vapor introduced is 200 sccm and the introduction time is 60 s.

[0105] E. releasing trimethylaluminum (TMA) gas, wherein the amount of TMA introduced is 300 sccm, the introduction time is 10 s, and the circumferential rotation speed of the support portion 3 is 10 rpm / min;

[0106] F. Release nitrogen to clean the pipes and chambers. The nitrogen flow rate is 22 slm and the nitrogen flow time is 10 s.

[0107] G. Release water vapor (H2O) at a rate of 150 sccm for 10 s and a circumferential rotational speed of the support portion 3 of 10 rpm / min;

[0108] H. Release nitrogen to clean the pipes and chambers. The nitrogen flow rate is 22 slm and the nitrogen flow time is 10 s.

[0109] I. Cycle the EH cycle six times;

[0110] J. After the deposition is completed, the deposition part 2 of the deposition equipment releases nitrogen to purge and remove excess gas in the chamber;

[0111] K. Take out the battery base 001.

[0112] The battery matrix 001 prepared in the embodiment and the comparative example was subjected to WCT-120 passivation test, and the performance test results were as follows:

[0113]

[0114] As shown in Table 1, the IVoc (open-circuit voltage) of the Example increased by 1.06 mV compared to the Comparative Example, demonstrating that the battery substrate 001 prepared in the Example exhibits superior passivation performance. This further demonstrates that rotating the battery substrate 001 allows for the effective deposition of the passivation layer 04 on the sides of the first and second carrier collection layers 02 and 03. The IFF (intrinsic fill factor) also significantly improved, indicating that the effective deposition of the passivation layer 04 (aluminum oxide) on the sides of the first and second carrier collection layers 02 and 03 effectively reduced leakage in the gap region. Furthermore, the increased lifetime (minority carrier lifetime) indicates that the passivation layer 04 on the sides of the first and second carrier collection layers 02 and 03 helps reduce defect states in the silicon substrate, thereby improving the dielectric film's ability to extract carriers from the region.

[0115] Furthermore, an embodiment of the present invention also provides a solar cell deposition device for preparing any of the aforementioned solar cells or for implementing any of the aforementioned solar cell deposition methods. This is because existing atomic layer deposition devices cannot implement the deposition methods of the embodiments of the present invention and cannot prepare the solar cells of the present invention. Specifically, the placement platform of the battery substrate in the existing atomic layer deposition device is a fixed platform, and the deposition gas is deposited on the battery from the top downward. Therefore, only a planar passivation layer can be formed on the battery, for example Figure 1 In the passivation layer 04 shown, the thickness of the passivation layer 04 is much smaller than the thickness of the spacer region, so the passivation layer cannot be formed in the area lateral to the carrier collection layer. Therefore, an embodiment of the present invention provides a deposition apparatus for a solar cell to achieve the effect of simultaneously depositing a longitudinal passivation layer 04 on the sides of the first carrier collection layer 02 and the second carrier collection layer 03 included in the cell substrate 001, while also improving deposition uniformity.

[0116] Figure 8 FIG. 1 shows a schematic diagram of the rough structure of a deposition device for a solar cell provided by an embodiment of the present invention, as shown in FIG. Figure 8As shown, the deposition equipment for solar cells provided by the present invention includes: a driving part 1, a deposition part 2 and a support part 3; wherein, the support part 3 is used to place the battery substrate 001; the driving part 1 applies a driving force to the support part 3, adjusts the position of the support part 3 relative to the deposition part 2, and drives the support part 3 to rotate when the support part 3 is located below the deposition part 2, so that the support part 3 rotates in its circumferential direction; the deposition part 2 is used to deposit a film layer for the battery substrate 001 placed on the support part 3.

[0117] Specifically, during use, since the deposition part 2 is relatively fixed and cannot be moved, and the gas is deposited from top to bottom during the deposition process, it is necessary to first use the driving part 1 to adjust the position of the support part 3 so that the support part 3 is in a position convenient for placing the battery substrate 001. Then, after the battery substrate 001 is placed on the support part 3, the position of the support part 3 is adjusted using the driving part 1 so that the support part 3 is located below the deposition part 2, and then the deposition process can be started.

[0118] In actual application, for certain specific deposition gases, due to the flammability and explosiveness of the deposition gas, the deposition process needs to be carried out in a closed and vacuum deposition chamber. Therefore, in an optional embodiment, after the support part 3 moves to the bottom of the deposition part 2, the environment in which the deposition part 2 and the support part 3 are located is sealed, so that the deposition part 2 and the support part 3 can realize the deposition process in a vacuum-sealed chamber.

[0119] It should be noted that the problem in the prior art of being unable to deposit the passivation layer 04 on the sides of the first carrier collection layer 02 and the second carrier collection layer 03 included in the battery substrate 001 is mainly due to the fact that the positions of the deposition part 2 and the support part 3 are fixed, and no gas flow occurs during the deposition process, so that the deposition gas can only be deposited from top to bottom on the upper surface of the battery substrate 001 to form a planar passivation film. Therefore, the embodiment of the present invention utilizes the driving part 2 to achieve relative rotation between the support part 3 and the deposition part 2, and through the relative rotation of the support part 3, the air flow in the chamber can be driven, and under the action of centrifugal force, the effect of deposition gas deposition on the side is achieved. At the same time, the embodiment of the present invention can further improve the uniformity of deposition at any position on the support part 3 by controlling the rotation of the support part 3.

[0120] Below, Figures 9 to 16 The specific structure of the driving unit 1 is described in detail, wherein: Figure 9 The figure shows the positional relationship between the lifting structure 11 and the transmission structure 12 included in the driving unit 1. Figure 10 FIG. 1 shows a schematic diagram of the specific structure of the lifting assembly 112 in a non-lifted state. Figure 11 shows a schematic diagram of the specific structure of the lifting assembly 112 in the raised state, Figure 12The positional relationship between the threaded assembly 1124 and the housing 1123 is shown. Figure 13 FIG. 1 shows a schematic diagram of the overall structure of the lifting sleeve 1121 in an embodiment of the present invention. Figure 14 FIG. 1 shows the thread structure of the thread assembly 1124 in an embodiment of the present invention. Figure 15 The specific structure of the connecting component 113 and its positional relationship with the supporting portion 3 are shown. Figure 16 A schematic diagram of the lower surface structure of the support portion 3 is shown.

[0121] In an optional embodiment, as Figure 9 As shown, the driving unit 1 includes: a lifting structure 11 and a transmission structure 12 located below the deposition unit 2, wherein the lifting structure 11 is used to drive the support unit 3 to move in the vertical direction, so that the support unit 3 approaches or moves away from the deposition unit 2 in the vertical direction, and can also drive the support unit 3 to rotate; the transmission structure 12 is used to transport the support unit 3 to or from the bottom of the deposition unit 2 in the horizontal direction. In order to achieve both the rotation of the support unit 3 and the horizontal movement of the support unit 3, the embodiment of the present invention is respectively provided with a lifting structure 11 and a transmission structure 12, so that the position of the support unit 3 is adjusted by using the transmission structure 12. After the battery substrate 001 is placed, the support unit 3 is moved horizontally to the bottom of the deposition unit 2, and the lifting structure 11 is used to achieve the rotation of the support unit 3 during the deposition process.

[0122] In a further optional embodiment, the lifting structure 11 is as follows Figure 10 As shown, it specifically includes: a power component 111, a lifting component 112 and a connecting component 113; wherein the power component 111 is arranged at the bottom of the lifting component 112; when the power component 111 drives the lifting component 112 to rotate, part of the structure in the lifting component 112 moves upward relative to the power component 111, so as to drive the connecting component 113 to move upward, and when the connecting component 113 is at the highest point, the part of the structure in the lifting component 112 drives the connecting component 113 to rotate; the connecting component 113 is fixed to the top of the lifting component 112, and is used to connect the support part 3.

[0123] from Figure 10It can be seen that the power assembly 111, the lifting assembly 112, and the connecting assembly 113, which are arranged sequentially from bottom to top, together constitute the lifting structure 11 in the embodiment of the present invention. During the deposition operation, the power assembly 111 at the bottom provides power, driving the lifting assembly 112 at the middle position to move in the vertical direction, so that the connecting assembly 113 at the top follows the lifting assembly 112 to achieve up and down movement in the vertical direction. In an optional embodiment, the power assembly 111 can be a motor that provides a rotational output, that is, the power assembly 111 itself does not drive the lifting assembly 112 to rise or fall, but through the internal structure of the lifting assembly 112, the rotational output provided by the power assembly 111 is converted into a force in the vertical direction, thereby achieving vertical movement.

[0124] It should be noted that when the power component 111 outputs rotation to drive the lifting component 112 to move up and down, the output end of the power component 111 can be in direct contact with the lifting component 112 to drive the lifting component 112 to move up and down, or the power component 111 can be a magnetohydrodynamic motor, which does not need to be in direct contact with the lifting component 112, and drives the lifting component 112 to rotate by magnetic force.

[0125] In the case where the power assembly 111 is a magnetic fluid motor, in a further optional embodiment of the present invention, Figure 10 and Figure 11 For example, the lifting assembly 112 includes: a lifting sleeve 1121, a buckle 1122 protruding from the outer wall of the lifting sleeve 1121, a threaded assembly 1124 sleeved on the outer side of the lifting sleeve 1121, and a shell 1123; wherein the lifting sleeve 1121 is a hollow cylinder, which rotates under the drive of the power assembly 111; at least a portion of the shell 1123 is sleeved on the outer side of the threaded assembly 1124, and the shell 1123 is fixed relative to the support part 3, and a slide groove 100 extending in the vertical direction is provided on the inner side of the shell 1123; the threaded assembly 1124 is a circular The top of the circular ring structure is fixedly connected to the connecting assembly 113. A rotating thread 600 is provided on the inner wall of the circular ring structure, which engages with the buckle 1122, and a slider 200 is provided on the outer wall of the circular ring structure, which matches the slide 100. When the lifting sleeve 1121 is driven by the power assembly 111, the buckle 1122 moves in the rotating thread 600 on the inner wall of the threaded assembly 1123. With the cooperation of the slider 200 and the slide 100, the threaded assembly 1124 is moved up and down, and the threaded assembly 1124 drives the connecting assembly 113 to move up and down. Among them, the rotating thread 600 refers to a multi-turn inclined thread structure. The rotation direction of the thread can be set according to actual conditions, and the present invention does not specifically limit this.

[0126] It is understandable that if Figure 10 and Figure 11As shown, at least a portion of housing 1123 is located inside lifting sleeve 1121, creating a sealed vacuum space around power assembly 111 (the magnetohydrodynamic motor), thereby ensuring the proper operation of the magnetohydrodynamic rotating shaft of the magnetohydrodynamic motor. For example, housing 1123 may have at least a U-shaped cross-section, with lifting sleeve 1121 and threaded assembly 1124 both positioned within the U-shaped groove.

[0127] in, Figure 10 The figure shows a specific structural diagram of the lifting assembly 112 in the non-lifted state. Figure 11 What is shown is a schematic diagram of the specific structure of the lifting assembly 112 in the raised state. Figure 10 and Figure 11 It can be seen from the A area in the figure that when the lifting assembly 112 is in different states, the relative position relationship between the buckle 1122 on the outer wall of the lifting sleeve 1121 and the threaded assembly 1124 is different. In actual application, after the power assembly 111 (magnetic fluid motor) is installed under the housing 1123, the magnetohydrodynamic rotor in the magnetohydrodynamic motor begins to rotate to generate magnetism, driving the lifting sleeve 1121 to rotate circumferentially. At this time, the buckle 1122 on the outer wall of the lifting sleeve 1121 begins to move along the rotating thread 600 on the inner wall of the threaded assembly 1124. It should be noted that since the contact between the buckle 1122 and the threaded assembly 1124 is not a resistance-free contact, the threaded assembly 1124 may rotate in the same direction as the buckle 1122 rotates, and the purpose of vertical movement cannot be achieved. Therefore, the embodiment of the present invention provides a slide groove 100 extending in the vertical direction on the inner side of the fixed housing 1123, and provides a slider 200 matching the slide groove 100 on the outer wall of the threaded assembly 1124, as shown in FIG. Figure 12 As shown. Among them, Figure 12 The top view shows the positional relationship between the threaded assembly 1124 and the housing 1123, while area B shows the positional relationship between the chute 100 and the slider 200. It is understandable that due to the limitation of the chute 100, the slider 200 can only move in the vertical direction, so the threaded assembly 1124 cannot move in the circumferential direction. This means that when the lifting sleeve 1121 rotates circumferentially, the buckle 1122 will inevitably move in the rotating thread 600, thereby forming a relative displacement between the lifting sleeve 1121 and the threaded assembly 1124. Figure 10 and Figure 11 It can be seen that in Figure 10 In the figure, the buckle 1122 on the outer wall of the lifting sleeve 1121 is located at the uppermost end of the rotating thread 600 in the threaded assembly 1124. As the lifting sleeve 1121 continues to rotate, the buckle 1122 will continue to move in the rotating thread 600, so that the threaded assembly 1124 continues to rise, and moves to the highest point when the buckle 1122 is located at the lowermost end of the rotating thread 600.

[0128] Figure 13 A schematic diagram of the overall structure of the lifting sleeve 1121 in an embodiment of the present invention is shown. In an optional embodiment, the cross-section of the buckle 1122 can be at least one of a triangle, a rectangle, a square, a circle, and an arc, and the cross-section of the rotating thread 600 matches the cross-section of the buckle to ensure that the buckle 1122 can move along the rotating thread 600.

[0129] In addition, from Figure 13 It can be seen that a base 500 is provided at the lower end of the hollow cylinder of the lifting sleeve 1121. When the threaded assembly 1124 moves downward, as the lower surface of the threaded assembly 1124 abuts against the base 500 of the lifting sleeve 1121, the threaded assembly 1124 cannot continue to move downward, that is, the threaded assembly 1124 is restored to the state when it was not raised. Similarly, it is also necessary to ensure that the threaded assembly 1124 will not fall out from the top of the lifting sleeve 1121, that is, if the rotating thread 600 is set to pass through the thickness direction of the threaded assembly 1124, the threaded assembly 1124 will move upward. There is a situation where the buckle 1122 moves out of the rotating thread 600 of the threaded assembly 1124, resulting in the lifting sleeve 1121 being unable to control the descent of the threaded assembly 1124. Therefore, Figure 14 For example, the thread structure in the thread assembly 1124 is schematically illustrated. In an optional embodiment of the present invention, a flat thread 700 connected to the lowermost end of the rotating thread 600 is further provided on the inner wall of the annular structure; a horizontal slide groove connected to the top of the slide groove 100 is further provided on the inner side of the shell 1123; wherein the horizontal slide groove is circumferentially arranged; after the buckle 1122 moves from the rotating thread 600 to the flat thread 700, the slider 200 and the horizontal slide groove are located on the same horizontal line, the lifting sleeve 1121 and the thread assembly 1124 form a rotational connection, and the thread assembly 1124 and the shell 1123 form a rotational connection, and the rotational connection means that they can rotate relative to each other. When the thread assembly 1124 rotates itself under the action of external force, it can rotate horizontally relative to the lifting sleeve 1121 and the shell 1123, the buckle 1122 can move in the flat thread 700, and the slider 200 can move in the horizontal slide groove. Among them, the flat thread 700 refers to a horizontally arranged thread structure. Since the horizontal slide groove is on the inner side of the shell 1123 and is circumferentially arranged, Figure 12 It is not marked in the top view. Figure 14It can be seen that the flat thread 700 is actually the bottommost thread in the threaded assembly 1124. When the threaded assembly 1124 has a total of n threads, the rotating thread 600 represents the n-1th thread from top to bottom, and the flat thread 700 represents the nth thread (i.e., the bottommost thread). The combination of the rotating thread 600 and the flat thread 700 ensures that the threaded assembly 1124 will not separate from the buckle 1122 in the lifting sleeve 1121 during its upward movement. When the buckle 1122 is located on the flat thread 700, the slider 200 and the horizontal slot are aligned horizontally, meaning that the slider 200 can move horizontally in the horizontal slot, allowing the threaded assembly 1124 to rotate horizontally.

[0130] It should be noted that when the buckle 1122 is located at the flat thread 700, the rotation of the lifting sleeve 1121 driven by the power component 111 alone cannot continue to control the rotation of the thread component 1124. Therefore, in a further optional embodiment, as shown in FIG. Figure 3 and Figure 4 As shown, the lifting assembly 112 further includes an electromagnetic component 1125. When the lifting sleeve 1121 and the threaded component 1124 are rotationally connected, and the threaded component 1124 is rotationally connected to the housing 1123, the electromagnetic force generated by the electromagnetic component 1125 provides an external force to the threaded component 1124, so that the threaded component 1124 rotates horizontally in the circumferential direction relative to the lifting sleeve 1121 under the action of the external force. Specifically, only the threaded component 1124 can be made of a magnetic material. In this way, when the electromagnetic component 1125 is activated, it only generates an electromagnetic force in the circumferential direction on the threaded component 1124, while no electromagnetic force is generated on other structures in the lifting assembly 112.

[0131] It can be seen that the structure of the above-mentioned lifting assembly 112 can drive the connecting assembly 113 to move in the vertical direction, and after the lifting assembly 112 rises to a specific position, the connecting assembly 113 can be controlled to rotate in the circumferential direction. However, the ultimate purpose of the embodiment of the present invention is to control the support part 3 to rotate, so it is also necessary to achieve a fixed connection between the connecting assembly 113 and the support part 3, so as to drive the support part 3 to rotate. Therefore, in an optional embodiment, the connecting assembly 113 includes: a main body 1131, a connecting shaft 1132 arranged on the side of the main body 1131 close to the support part 3; a connecting through hole 31 corresponding to the connecting shaft 1132 is provided on the lower surface of the support part 3; the bottom of the connecting assembly 113 is fixedly connected to the top of the threaded assembly 1124, and when the lifting assembly 112 moves upward to the highest point, the connecting shaft 1132 is inserted into the connecting through hole 31.

[0132] For example, Figure 15 The specific structure of the connecting component 113 and its positional relationship with the supporting portion 3 are shown. Figure 16FIG. 3 shows a schematic diagram of the lower surface structure of the support portion 3. Figure 15 and Figure 16 It can be seen that a plurality of protruding connecting shafts 1132 are provided on the upper surface of the main body 1131 in the connecting component 113, and a plurality of connecting through holes 31 corresponding to the connecting shafts 1132 are provided on the lower surface of the supporting portion 3. In this way, after the connecting component 113 rises to a specific position along with the lifting component 112, the connecting shafts 1132 can be inserted into the corresponding connecting through holes 31, thereby realizing a fixed connection between the connecting component 113 and the supporting portion 3.

[0133] In a further optional embodiment, the connecting shaft 1132 includes: a main shaft 300 located at the axis of the main body 1131 and at least one auxiliary shaft 400 arranged around the main shaft 300; there are multiple connecting through-holes 31, corresponding to the main shaft 300 and the auxiliary shaft 400 respectively. It is understandable that only providing a single main shaft 300 cannot achieve a fixed connection between the connecting assembly 113 and the support portion 3. At least two positions need to be inserted into the connecting through-holes 31 to achieve a fixed connection between the connecting assembly 113 and the support portion 3. However, if only one main shaft 300 and one auxiliary shaft 400 are provided, the centrifugal force in a single direction will be too large when the support portion 3 moves circumferentially with the connecting assembly 113, posing a safety hazard of breaking the auxiliary shaft 400. Therefore, in a further preferred embodiment of the present invention, multiple auxiliary shafts 400 are provided, and the multiple auxiliary shafts 400 are symmetrically arranged along the main shaft 300. The provision of multiple auxiliary shafts 400 can, on the one hand, ensure that the torsional force between the connecting assembly 113 and the support portion 3 during startup is not excessive, thereby preventing the connecting shaft 1132 on the connecting assembly 113 from breaking. On the other hand, it can ensure that the support portion 3 does not generate centrifugal force in a single direction during the circumferential movement of the connecting assembly 113, thereby ensuring a stable connection between the support portion 3 and the connecting assembly 113. For example, six auxiliary shafts can be provided, with the angle between each two adjacent auxiliary shafts being 60°.

[0134] Below, Figure 9 The specific structure of the transmission structure 12 is described by taking as an example. In an optional embodiment, as Figure 9 As shown, the transmission structure 12 includes: a horizontally arranged transmission frame 121 and a conveyor belt 122; wherein the conveyor belt 122 is arranged on at least one set of opposite sides of the transmission frame 121, and is used to convey the support part 3 to the bottom of the deposition part 2 or move it out from the bottom of the deposition part 2; wherein the deposition part 2 is fixedly connected to the transmission frame 121. Specifically, Figure 9The arrow in the figure can represent one direction of movement of the conveyor belt 122, that is, after the support portion 3 is placed on the conveyor belt 122 at end A, it moves along the moving direction of the conveyor belt 122 to directly below the deposition portion 2 for film deposition. After deposition is completed, it continues to move out from below the deposition portion 2 along the moving direction of the conveyor belt 122 until it moves to end B. It is understood that the movement between the support portion 3 and the conveyor belt 122 can be achieved solely by the friction force generated by the weight of the support portion 3 itself, or multiple engaging points can be provided on the conveyor belt 122 to achieve the effect of driving the support portion 3 to move by utilizing the abutment between the engaging points and the support portion 3. Figure 9 The moving direction in the figure is only one case. The support part 3 can also be moved from the A end to the bottom of the deposition part 2 to complete the deposition, and then moved out to the A end. The present invention does not limit the specific moving direction.

[0135] It should be noted that the lifting structure 11 and the transmission structure 12 in the driving unit 1 of the embodiment of the present invention need to be used in combination, that is, the support unit 3 is first conveyed to the bottom of the deposition unit 2 by the conveyor belt 122 in the transmission structure 12, and then the lifting sleeve 1121, the buckle 1122, the housing 1123 and the threaded assembly 1124 in the lifting structure 11 work together to lift the support unit 3 from the starting position, so that the support unit 3 leaves the conveyor belt 122 in the transmission structure 12, thereby preventing the support unit 3 from being affected by the friction of the conveyor belt 122 during rotation. When the lifting structure 11 is lifted to the highest position, the electromagnetic component 1125 controls the horizontal circumferential rotation of the support unit 3. When the support unit 3 reaches a stable speed, the deposition unit 2 is controlled to start the deposition process until the deposition is completed. After the deposition is completed, the electromagnetic component 1125 is turned off to stop the circumferential rotation of the support part 3, and then the lifting sleeve 1121, the buckle 1122, the shell 1123 and the threaded assembly 1124 in the lifting structure 11 are used to work together to move the support part 3 downward until it returns to the starting position (that is, it is placed again on the conveyor belt 122), and finally the conveyor belt 122 in the transmission structure 12 is used to move the support part 3 out from under the deposition part 2.

[0136] In an optional embodiment, the contours of the support portion 3 and the deposition portion 2 provided by the present invention are both circular, and the diameter of the deposition portion 2 is not less than the diameter of the support portion 3. Because the circular structure is centrally symmetrical for circumferential motion, the centrifugal forces generated at two symmetrical positions are of the same magnitude but opposite directions, and therefore are relatively stable during circumferential motion, and can better ensure the stability of circumferential motion compared to other structures. Moreover, when both the support portion 3 and the deposition portion 2 are circular structures, it can be ensured that each position in the support portion 3 is located below the deposition portion 2 during circumferential motion, and will not move out of the bottom of the deposition portion 2, thereby ensuring the uniformity of deposition.

[0137] In summary, the deposition device of the deposition method for solar cells provided in an embodiment of the present invention, by providing a driving part and a supporting part, can utilize the driving part to apply a driving force to the supporting part, so that the supporting part on which the battery substrate 001 is placed can rotate in its circumferential direction, which can not only form a horizontal planar passivation layer on the main surface of the first carrier collection layer and the second carrier collection layer and the main surface of the isolation area, but also can utilize centrifugal force to form a longitudinal passivation layer on the side of the first carrier collection layer and the second carrier collection layer, thereby improving the overall passivation effect.

[0138] The present invention also provides the following technical solutions:

[0139] Technical Solution 1. A solar cell, comprising:

[0140] Silicon substrate 01,

[0141] A first carrier collection layer 02 is provided in the first region of the first main surface of the silicon substrate 01.

[0142] A second carrier collection layer 03 is provided in the second region of the first main surface of the silicon substrate 01.

[0143] and a passivation layer 04;

[0144] The first regions and the second regions are alternately arranged with a spacing region therebetween; the first carrier collection layer 02 and the second carrier collection layer 03 have opposite conductivity types;

[0145] The passivation layer 04 covers the main surface and side surfaces of the first carrier collection layer 02 , the main surface and side surfaces of the second carrier collection layer 03 , and the spacing region.

[0146] Technical Solution 2. The solar cell according to Technical Solution 1, characterized in that:

[0147] The thickness of the portion of the passivation layer 04 corresponding to the main surface of the first carrier collection layer 02 and / or the main surface of the second carrier collection layer 03 and / or the spacing area is 3nm~7nm; and / or, the thickness of the portion of the passivation layer 04 corresponding to the side surface of the first carrier collection layer 02 is 3nm~7nm; and / or, the thickness of the portion of the passivation layer 04 corresponding to the side surface of the second carrier collection layer 03 is 3nm~7nm.

[0148] Technical Solution 3. The solar cell according to Technical Solution 1 is characterized in that:

[0149] The first carrier collection layer 02 includes a tunneling oxide layer and a first doping layer doped with a first doping element stacked from the inside to the outside;

[0150] or,

[0151] The first carrier collection layer 02 includes an intrinsic polysilicon layer and a first doping layer doped with a first doping element stacked from the inside to the outside;

[0152] The second carrier collection layer 03 includes a tunneling oxide layer and a second doping layer doped with a second doping element stacked from the inside to the outside; wherein the second doping element has a doping type opposite to that of the first doping element;

[0153] or,

[0154] The second carrier collection layer 03 includes an intrinsic polysilicon layer and a second doping layer doped with the second doping element stacked from the inside to the outside.

[0155] Technical Solution 4. A deposition method for a solar cell, comprising:

[0156] Step 1: Place the battery substrate 001 in a deposition chamber of a deposition device;

[0157] Step 2: Control the deposition device to release deposition gas, use the deposition device to control the circumferential rotation of the battery substrate 001, and deposit a passivation layer 04 with a predetermined thickness on the side and outer side of the main surface of the first carrier collection layer 02, the side and outer side of the main surface of the second carrier collection layer 03, and the spacing area included in the battery substrate 001.

[0158] Technical Solution 5. The deposition method according to Technical Solution 4 is characterized in that step 2 comprises: N first deposition cycles and N second deposition cycles; wherein,

[0159] The first deposition cycle includes:

[0160] Step 21: Control the deposition device to release a first deposition gas, and use the deposition device to control the battery substrate 001 to rotate circumferentially in a first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side surface of the first carrier collection layer 02, the outer side of the main surface and the first side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0161] Step 22, stop rotating the battery substrate 001, and control the deposition device to release a purge gas to purge the surface of the intermediate deposition layer;

[0162] Step 23: Control the deposition device to release a second deposition gas, and use the deposition device to control the battery substrate 001 to rotate circumferentially in a first direction, so as to deposit a passivation layer 04 having a first thickness on the outer side of the main surface and the first side of the first carrier collection layer 02, the outer side of the main surface and the first side of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0163] Step 22, stopping the rotation of the battery substrate 001, and controlling the deposition device to release a purge gas to purge the surface of the passivation layer;

[0164] as well as,

[0165] The second deposition cycle comprises:

[0166] Step 31: Control the deposition device to release a first deposition gas, and use the deposition device to control the battery substrate 001 to rotate circumferentially in a second direction opposite to the first direction, so as to form an intermediate deposition layer on the outer side of the main surface and the first side surface of the first carrier collection layer 02, the outer side of the main surface and the first side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0167] Step 32, stop rotating the battery substrate 001, and control the deposition device to release a purge gas to purge the surface of the intermediate deposition layer;

[0168] Step 33: Control the deposition device to release the second deposition gas, and use the deposition device to control the battery substrate 001 to rotate circumferentially in the second direction to deposit a passivation layer 04 having a first thickness on the outer side of the main surface and the second side surface of the first carrier collection layer 02, the outer side of the main surface and the second side surface of the second carrier collection layer 03, and the outer side of the spacing region of the battery substrate 001;

[0169] Step 34, stop rotating the battery substrate 001, and control the deposition device to release a purge gas to purge the surface of the passivation layer;

[0170] The predetermined thickness is N times the first thickness.

[0171] Technical Solution 6. The deposition method according to Technical Solution 5 is characterized in that step 2 includes: after continuously implementing the first deposition cycle N times, continuously implementing the second deposition cycle N times; and / or, the first deposition cycle and the second deposition cycle are implemented alternately N times.

[0172] Technical Solution 7. The deposition method according to Technical Solution 6, characterized in that, after step 1 and before step 2, it further includes:

[0173] evacuating a deposition chamber in the deposition device and heating the deposition chamber;

[0174] Controlling the deposition device to release cleaning gas to clean the surface of the battery substrate 001 using the cleaning gas,

[0175] and / or,

[0176] The speed of the circumferential rotation in step 2 is 5 rpm / min to 15 rpm / min,

[0177] and / or,

[0178] The deposition chamber was evacuated to 1 mbar~10 mbar and the temperature was raised to 200℃~300℃.

[0179] and / or,

[0180] The cleaning gas is water vapor;

[0181] and / or,

[0182] The amount of the cleaning gas introduced is 100 sccm to 300 sccm;

[0183] and / or,

[0184] The cleaning gas is introduced for 50s to 80s.

[0185] and / or,

[0186] The purge gas is nitrogen;

[0187] and / or,

[0188] The flow rate of the purge gas is 20slm~25slm;

[0189] and / or,

[0190] The purge gas is introduced for a time of 5s to 20s.

[0191] Technical Solution 8. A solar cell deposition device, used to prepare any solar cell of Technical Solutions 1 to 3 or to implement any solar cell deposition method of Technical Solutions 4 to 7, characterized in that it comprises: a driving unit 1, a deposition unit 2, and a support unit 3; wherein:

[0192] The support portion 3 is used to place the battery substrate 001;

[0193] The driving portion 1 applies a driving force to the supporting portion 3, adjusts the position of the supporting portion 3 relative to the deposition portion 2, and drives the supporting portion 3 to rotate when the supporting portion 3 is located below the deposition portion 2, so that the supporting portion 3 rotates in its circumferential direction;

[0194] The deposition part 2 is used to deposit a passivation layer on the battery substrate 001 placed on the support part 3 .

[0195] Technical Solution 9. The deposition device according to Technical Solution 8 is characterized in that the driving unit 1 includes: a lifting structure 11 and a transmission structure 12 located below the deposition unit 2, wherein:

[0196] The lifting structure 11 is used to drive the support portion 3 to move in the vertical direction, so that the support portion 3 moves closer to or away from the deposition portion 2 in the vertical direction and drives the support portion 3 to rotate;

[0197] The transmission structure 12 is used to transport the support portion 3 to or from under the deposition portion 2 in a horizontal direction.

[0198] Technical Solution 10. The deposition device according to Technical Solution 9 is characterized in that:

[0199] The lifting structure 11 includes: a power component 111, a lifting component 112 and a connecting component 113; wherein,

[0200] The power assembly 111 is disposed at the bottom of the lifting assembly 112. When the power assembly 111 drives the lifting assembly 112 to rotate, a portion of the structure in the lifting assembly 112 moves upward relative to the power assembly 111, thereby driving the connecting assembly 113 to move upward. When the connecting assembly 113 is at the highest point, the portion of the structure in the lifting assembly 112 drives the connecting assembly 113 to rotate.

[0201] The connecting assembly 113 is fixed to the top of the lifting assembly 32 and is used to connect to the supporting portion 3 .

[0202] Technical Solution 11. The deposition device according to Technical Solution 10 is characterized in that:

[0203] The lifting assembly 112 includes: a lifting sleeve 1121, a buckle 1122 protruding from the outer wall of the lifting sleeve 1121, a threaded assembly 1124 sleeved on the outer side of the lifting sleeve 1121, and a housing 1123; wherein,

[0204] The lifting sleeve 1121 is a hollow cylinder, which rotates under the drive of the power assembly 111;

[0205] At least a portion of the housing 1123 is sleeved on the outside of the threaded assembly 1124, and the housing 1123 is fixed relative to the support portion 3. A sliding groove 100 extending in a vertical direction is provided on the inner side of the housing 1123;

[0206] The threaded assembly 1124 is a circular ring structure, the top of which is fixedly connected to the connecting assembly 113. A rotating thread 600 engaging with the buckle 1122 is provided on the inner wall of the circular ring structure, and a slider 200 matching the slide groove 100 is provided on the outer wall of the circular ring structure.

[0207] As the lifting sleeve 1121 rotates with the power assembly 111, the buckle 1122 moves in the rotating thread 600 on the inner wall of the threaded assembly 1124. With the cooperation of the slider 200 and the slide groove 100, the threaded assembly 1124 moves up and down, and the threaded assembly 1124 drives the connecting assembly 113 to move up and down.

[0208] Technical Solution 12. The deposition device according to Technical Solution 11 is characterized in that:

[0209] A flat thread 700 connected to the lower end of the rotating thread 600 is also provided on the inner wall of the annular structure;

[0210] A horizontal chute is further provided on the inner side of the housing 1123 and is connected to the top of the chute 100; wherein the horizontal chute is provided circumferentially;

[0211] When the buckle 1122 moves from the rotating thread 600 to the flat thread 700 so that the connecting assembly 113 is at the highest point, the slider 200 and the horizontal slide groove are located on the same horizontal line, the lifting sleeve 1121 and the threaded assembly 1124 are rotationally connected, and the threaded assembly 1124 and the outer shell 1123 are rotationally connected. Under the action of external force, the threaded assembly 1124 rotates horizontally relative to the lifting sleeve 1121 and the outer shell 1123.

[0212] Technical Solution 13. The deposition device according to Technical Solution 12 is characterized in that:

[0213] The connecting assembly 113 includes: a main body 1131, and a connecting shaft 1132 provided on the main body 1131 near the support portion 3;

[0214] A connecting through hole 31 corresponding to the connecting shaft 1132 is provided on the lower surface of the supporting portion 3;

[0215] When the connecting assembly 113 moves upward to the highest point along with the lifting assembly 112 , the connecting shaft 1132 is inserted into the connecting through hole 31 .

[0216] Technical Solution 14. The deposition device according to Technical Solution 13 is characterized in that:

[0217] The connecting shaft 1132 includes: a main shaft 300 located at the axis center of the main body 1131 and at least one auxiliary shaft 400 arranged around the main shaft 300;

[0218] There are a plurality of connecting through holes 31 , each corresponding to the main shaft 300 and the auxiliary shaft 400 .

[0219] Technical Solution 15. The deposition device according to Technical Solution 14 is characterized in that the lifting assembly 112 further includes: an electromagnetic component 1125;

[0220] When the lifting sleeve 1121 and the threaded assembly 1124 form a rotational connection, and the threaded assembly 1124 and the shell 1123 form a rotational connection, the electromagnetic force generated by the electromagnetic component 1125 provides an external force to the threaded assembly 1124, so that the threaded assembly 1124 rotates horizontally relative to the lifting sleeve 1121 and the shell 1123 under the action of the external force.

[0221] Technical Solution 16. The deposition device according to Technical Solution 15 is characterized in that:

[0222] The transmission structure 12 includes a horizontally arranged transmission frame 121 and a conveyor belt 122; wherein,

[0223] The conveyor belt 122 is provided on at least one set of opposite sides of the transmission frame 121 and is used to convey the support portion 3 to the bottom of the deposition portion 2 or to move it out from the bottom of the deposition portion 2;

[0224] The deposition portion 2 is fixedly connected to the transmission frame 121 .

[0225] The above steps are merely provided to help understand the structure, method, and core concept of the present invention. It will be apparent to those skilled in the art that various improvements and modifications may be made to the present invention without departing from the principles of the present invention, and such improvements and modifications are also within the scope of protection of the claims of the present invention.

Claims

1. A solar cell, characterized in that: include: Silicon substrate (01), A first carrier collection layer (02) is provided in a first region of the first main surface of the silicon substrate (01), A second carrier collection layer (03) is provided in the second region of the first main surface of the silicon substrate (01), and a passivation layer (04); The first regions and the second regions are arranged alternately and a spacing region is provided between them; the first carrier collection layer (02) and the second carrier collection layer (03) have opposite conductivity types; The passivation layer (04) covers the main surface and side surfaces of the first carrier collection layer (02), the main surface and side surfaces of the second carrier collection layer (03), and the spacing region.

2. The solar cell according to claim 1, wherein The thickness of the portion of the passivation layer (04) corresponding to the main surface of the first carrier collection layer (02) and / or the main surface of the second carrier collection layer (03) and / or the spacing region is 3 nm to 7 nm; and / or, The thickness of the portion of the passivation layer (04) corresponding to the side surface of the first carrier collection layer (02) is 3 nm to 7 nm; and / or, The thickness of a portion of the passivation layer (04) corresponding to the side surface of the second carrier collection layer (03) is 3 nm to 7 nm.

3. The solar cell according to claim 1, wherein The first carrier collection layer (02) comprises a tunneling oxide layer and a first doping layer doped with a first doping element, which are stacked from the inside to the outside; or, The first carrier collection layer (02) comprises an intrinsic polysilicon layer and a first doping layer doped with a first doping element, which are stacked from the inside to the outside; The second carrier collection layer (03) comprises a tunneling oxide layer and a second doping layer doped with a second doping element stacked from the inside to the outside; wherein the second doping element has a doping type opposite to that of the first doping element; or, The second carrier collection layer (03) comprises an intrinsic polysilicon layer and a second doping layer doped with the second doping element, which are stacked from the inside to the outside.

4. A deposition method for a solar cell, characterized in that: include: Step 1, placing the battery substrate (001) in a deposition chamber of a deposition device; Step 2: Control the deposition device to release deposition gas, use the deposition device to control the circumferential rotation of the battery substrate (001), and deposit a passivation layer (04) with a predetermined thickness on the side and outer side of the main surface of the first carrier collection layer (02), the side and outer side of the main surface of the second carrier collection layer (03), and the spacing area included in the battery substrate (001).

5. The deposition method according to claim 4, characterized in that Said step 2 comprises: N first deposition cycles and N second deposition cycles; wherein, The first deposition cycle includes: Step 21, controlling the deposition device to release a first deposition gas, and using the deposition device to control the battery substrate (001) to rotate circumferentially in a first direction, so as to form an intermediate deposition layer on the outside of the main surface and the first side surface of the first carrier collection layer (02), the outside of the main surface and the first side surface of the second carrier collection layer (03), and the outside of the spacing region included in the battery substrate (001); Step 22, stopping the rotation of the battery substrate (001), and controlling the deposition device to release a purge gas to purge the surface of the intermediate deposition layer; Step 23, controlling the deposition device to release a second deposition gas, and using the deposition device to control the battery substrate (001) to rotate circumferentially in a first direction, so as to deposit a passivation layer (04) having a first thickness on the outside of the main surface and the first side surface of the first carrier collection layer (02), the outside of the main surface and the first side surface of the second carrier collection layer (03), and the outside of the spacing region included in the battery substrate (001); Step 22, stopping the rotation of the battery substrate (001), and controlling the deposition device to release a purge gas to purge the surface of the passivation layer; as well as, The second deposition cycle comprises: Step 31, controlling the deposition device to release a first deposition gas, and using the deposition device to control the battery substrate (001) to rotate circumferentially in a second direction opposite to the first direction, to form an intermediate deposition layer on the outside of the main surface and the first side surface of the first carrier collection layer (02), the outside of the main surface and the first side surface of the second carrier collection layer (03), and the outside of the spacing region of the battery substrate (001); Step 32, stopping the rotation of the battery substrate (001), and controlling the deposition device to release a purge gas to purge the surface of the intermediate deposition layer; Step 33, controlling the deposition device to release a second deposition gas, and using the deposition device to control the battery substrate (001) to rotate circumferentially in the second direction to deposit a passivation layer (04) having a first thickness on the outer side of the main surface and the second side surface of the first carrier collection layer (02), the outer side of the main surface and the second side surface of the second carrier collection layer (03), and the outer side of the spacing region of the battery substrate (001); Step 34, stopping the rotation of the battery substrate (001), and controlling the deposition device to release a purge gas to purge the surface of the passivation layer; The predetermined thickness is N times the first thickness.

6. The deposition method according to claim 5, characterized in that The step 2 includes: After continuously performing the first deposition cycle N times, continuously performing the second deposition cycle N times; and / or, The first deposition cycle and the second deposition cycle are alternately performed N times.

7. The deposition method according to claim 6, characterized in that After step 1 and before step 2, the method further includes: evacuating a deposition chamber in the deposition device and heating the deposition chamber; Controlling the deposition equipment to release cleaning gas, so as to use the cleaning gas to clean the surface of the battery substrate (001); and / or, The rotation speed of the circumferential rotation in step 2 is 5 rpm / min to 15 rpm / min; and / or, The deposition chamber is evacuated to 1 mbar-10 mbar and the temperature is raised to 200° C.-300° C.; and / or, The cleaning gas is water vapor; and / or, The amount of the cleaning gas introduced is 100 sccm to 300 sccm; and / or, The time for introducing the clean gas is 50s to 80s; and / or, The purge gas is nitrogen; and / or, The flow rate of the purge gas is 20slm~25slm; and / or, The purge gas is introduced for a time of 5s to 20s.

8. A deposition device for a solar cell, used for preparing any solar cell according to claims 1 to 3 or for implementing any solar cell deposition method according to claims 4 to 7, characterized in that: include: A driving part (1), a deposition part (2) and a support part (3); wherein, The support portion (3) is used to place the battery matrix (001); The driving portion (1) applies a driving force to the supporting portion (3), adjusts the position of the supporting portion (3) relative to the depositing portion (2), and drives the supporting portion (3) to rotate when the supporting portion (3) is located below the depositing portion (2), so that the supporting portion (3) rotates in its circumferential direction; The deposition part (2) is used to deposit a passivation layer on the battery substrate (001) placed on the support part (3).

9. The deposition apparatus according to claim 8, wherein: The driving part (1) comprises: a lifting structure (11) and a transmission structure (12) located below the deposition part (2), wherein: The lifting structure (11) is used to drive the support portion (3) to move in a vertical direction, so that the support portion (3) approaches or moves away from the deposition portion (2) in the vertical direction and drives the support portion (3) to rotate; The transmission structure (12) is used to transport the support portion (3) to below the deposition portion (2) or to move it out from below the deposition portion (2) in a horizontal direction.

10. The deposition apparatus according to claim 9, wherein: The lifting structure (11) comprises: a power component (111), a lifting component (112) and a connecting component (113); wherein, The power assembly (111) is arranged at the bottom of the lifting assembly (112); when the power assembly (111) drives the lifting assembly (112) to rotate, a part of the structure in the lifting assembly (112) moves upward relative to the power assembly (111), thereby driving the connecting assembly (113) to move upward, and when the connecting assembly (113) is at the highest point, the part of the structure in the lifting assembly (112) drives the connecting assembly (113) to rotate; The connecting assembly (113) is fixed to the top of the lifting assembly (32) and is used to connect to the supporting portion (3).

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