Substrate processing apparatus, furnace mouth assembly, substrate processing method, semiconductor device manufacturing method, and program

Abstract

The present invention is provided with: a processing container in which a substrate to be processed is accommodated; a furnace mouth member, at least a part of which faces the internal space of the processing container; a protective member provided so as to cover the portion of the furnace mouth member facing the internal space; and an attachment member that applies a managed predetermined pressure to bring the protective member into contact with the portion facing the inner space and attaches the protective member to the furnace mouth member.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a furnace port assembly, a substrate processing method, and a method and program for manufacturing a semiconductor device. Background Art

[0002] In the semiconductor device manufacturing process, substrate processing is performed using, for example, a vertical substrate processing apparatus that processes multiple substrates simultaneously. In a vertical substrate processing apparatus, byproducts may adhere to the bottom of the processing container, resulting in the generation of particles (e.g., Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2018-18882 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] If particles are generated in the processing container, film formation may be adversely affected.

[0008] The present invention provides a technology for suppressing the adhesion of by-products to the lower part of a processing container.

[0009] Solutions to Problems

[0010] According to one embodiment of the present invention, a technology is provided, comprising:

[0011] a processing container that accommodates a substrate to be processed therein;

[0012] a furnace port component, at least a portion of which faces the interior space of the processing container;

[0013] a protective member configured to cover the portion facing the interior space; and

[0014] A mounting member applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space, and mounts the protection member to the furnace port member.

[0015] Effects of the Invention

[0016] According to the present invention, adhesion of by-products to the lower portion of the processing container can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a longitudinal sectional view of a substrate processing apparatus to which one embodiment of the present invention is applied.

[0018] Figure 2 yes Figure 1A top perspective view of a protective plate used in a substrate processing apparatus shown.

[0019] Figure 3 yes Figure 2 Bottom perspective view of the protective plate shown.

[0020] Figure 4 It will Figure 2 An enlarged longitudinal section showing the area around the shoulder bolts that secure the protective plate to the cover.

[0021] Figure 5 Yes Figure 4 A longitudinal sectional view of a modified example of the area around the shoulder bolt is shown.

[0022] Figure 6 This is a schematic configuration diagram of a controller of a substrate processing apparatus to which one embodiment of the present invention is applied, and is a diagram showing a control system of the controller in a block diagram.

[0023] Figure 7 It is a diagram showing a process flow of one embodiment of the present invention.

[0024] Figure 8 This diagram shows the gas flow around the protective plate during flushing and draining. DETAILED DESCRIPTION

[0025] The following are the main references Figures 1 to 8 , illustrating one embodiment of the present invention. In addition, the figures used in the following description are all schematic depictions, and the dimensions of the elements shown in the figures, the proportions of the elements, etc., are not necessarily consistent with the actual objects. In addition, the dimensions of the elements, the proportions of the elements, etc. between multiple figures are not necessarily consistent. For common elements represented by the same symbols in multiple icons, the description is sometimes omitted. Unless otherwise specified in the specification, each element is not limited to one, and there may be multiple elements.

[0026] The substrate processing apparatus is configured as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) 1 and performs a substrate processing step such as a heat treatment as one of the manufacturing steps in a method for manufacturing a semiconductor device.

[0027] like Figure 1 As shown, processing apparatus 1 includes a cylindrical reaction tube 2 and a heater 3, serving as a heating unit (heating mechanism), disposed on the outer periphery of reaction tube 2. Reaction tube 2 is formed, for example, from quartz (SiO2) or silicon carbide (SiC). Reaction tube 2 is provided with a temperature sensor 4, which is disposed upright along the inner wall of reaction tube 2.

[0028] A cylindrical manifold 5 is connected to the lower opening of the reaction tube 2 via a sealing member 6, such as an O-ring, to support the lower end of the reaction tube 2. The manifold 5 is made of a metal such as stainless steel. The reaction tube 2 and the manifold 5 form a processing vessel 7. Within the processing vessel 7, a processing chamber 8 is formed to process wafers W, which serve as substrates.

[0029] In addition, the reaction tube 2 is formed with a supply buffer chamber 2A and an exhaust buffer chamber 2B facing each other in a manner protruding outward (radially). The supply buffer chamber 2A and the exhaust buffer chamber 2B are divided into multiple spaces by partitions. In each block of the supply buffer chamber 2A, a nozzle 23a, a nozzle 23b and a nozzle 23c extending in the loading direction of the wafer W are respectively provided. The supply buffer chamber 2A has a nozzle arrangement portion that accommodates the nozzles 23a to 23c in a position where they do not interfere with the wafer W. The boundary walls of the supply buffer chamber 2A and the exhaust buffer chamber 2B and the processing chamber 8 are provided with multiple slits to connect the two sides, and the inner diameter of the slit is the same as the inner diameter of the portion of the reaction tube where the supply buffer chamber 2A is not provided. An opening 2E is formed at the bottom of the inner wall of the supply buffer chamber 2A for inserting and removing the nozzles 23a to 23c. The width of the opening 2E is formed to be substantially the same as that of the supply buffer chamber 2A. Here, it is quite difficult to eliminate the gap between the opening 2E and the bases of the nozzles 23 a to 23 c , and therefore it is difficult to prevent the reaction gas and the like from flowing out through the gap.

[0030] The lower end opening of the manifold 5 (the lower end opening of the processing container 7) is opened and closed by a disc-shaped cover (furnace mouth component, sealing cover) 9. In other words, the cover 9 seals the lower end opening of the processing container 7 airtightly. In this way, the airtightness of the processing chamber 8 can be maintained. At least a portion of the cover 9 is exposed to the atmosphere in the processing container 7. The cover 9 is formed of metal, for example. A sealing component 11 such as an O-ring is provided on the upper surface of the cover 9, and the reaction tube 2 is airtightly isolated from the outside air by the sealing component 11. A protective plate (protective component) 12 is provided on the upper surface of the cover 9 as a cover cover. In other words, the protective plate 12 is provided to cover the portion of the cover 9 exposed to the atmosphere in the processing container 7. A hole 46 (see FIG. 4 ) to be described later is formed in the center of the cover 9. Figure 8 ) for inserting the rotating shaft 13. In order to protect the sealing members 6 and 11, it is preferred that they be kept below 200°C, and a water jacket (not shown) is installed on the flange of the reaction tube 2 or the manifold 5.

[0031] Inside the processing chamber 8, a wafer boat 14 is housed. This is a substrate holder that vertically supports multiple wafers W (e.g., 25 to 150 wafers) in a shelf-like configuration. The wafer boat 14 is made of, for example, quartz or SiC and is supported above a thermal insulation structure (insulation assembly) 15. The thermal insulation structure 15 is positioned closer to the wafers W being processed than the protective plate 12.

[0032] The thermal insulation structure 15 is cylindrical in shape and is supported by the rotating shaft 13 that passes through the cover 9. The thermal insulation structure 15 has a metal disc-shaped bottom plate 40 supported by the rotating shaft 13. The rotating shaft 13 is connected to a rotating mechanism 16 provided below the cover 9. A magnetic fluid seal is provided at the portion of the rotating shaft 13 that passes through the cover 9, so that the rotating shaft 13 can rotate while being airtightly sealed inside the reaction tube 2. The rotation of the rotating shaft 13 causes the thermal insulation structure 15 to rotate integrally with the wafer boat 14. The cover 9 is driven in the up and down directions by the wafer boat elevator 17 that serves as an elevator. The wafer boat elevator 17 allows the substrate holder and the cover 9 to be raised and lowered integrally, and the wafer boat 14 is moved in and out relative to the reaction tube 2.

[0033] Processing apparatus 1 includes a gas supply mechanism 18 that supplies source gas, reaction gas, or inert gas into processing chamber 8 as processing gas (process gas) for substrate processing. The process gas supplied by gas supply mechanism 18 is selected based on the type of film to be formed. Gas supply mechanism 18 includes a source gas supply unit, a reaction gas supply unit, an inert gas supply unit, a first purge gas supply unit, and a second purge gas supply unit.

[0034] The raw material gas supply unit includes a gas supply pipe 19a. A mass flow controller (MFC) 21a serving as a flow controller (flow control unit), a valve 22a serving as an on-off valve, a tank 24a, and a valve 25a are provided in the gas supply pipe 19a in this order from the upstream direction. The downstream end of the gas supply pipe 19a is connected to a nozzle 23a that penetrates the side wall of the manifold 5. The nozzle 23a is vertically arranged along the inner wall of the reaction tube 2 in the vertical direction within the reaction tube 2 and is formed with a plurality of supply holes that open toward the wafers W held by the wafer boat 14. The raw material gas is supplied to the wafers W through the supply holes of the nozzle 23a. The gas supply pipe 19a, the MFC 21a, the valve 22a, the tank 24a, the valve 25a, and the nozzle 23a constitute a purge gas flow supply system.

[0035] Following the same structure, reactive gas is supplied from the reactive gas supply unit to wafer W via gas supply pipe 19b, MFC 21b, valve 22b, and nozzle 23b. Furthermore, inert gas is supplied from the inert gas supply unit to wafer W via gas supply pipe 19c, MFC 21c, valve 22c, tank 24a, valve 25a, and nozzle 23a. Furthermore, inert gas is supplied from the inert gas supply unit to wafer W via gas supply pipes 19d, 19e, MFCs 21d, 21e, valves 22d, 22e, and nozzles 23b, 23c. Gas supply pipe 19c, MFC 21c, valve 22c, tank 24a, valve 25a, and nozzle 23a.

[0036] The first exhaust gas supply part (supply mechanism) is provided with a gas supply pipe 19f. An MFC 21f and a valve 22f are sequentially provided on the gas supply pipe 19f from the upstream direction. The downstream end of the gas supply pipe 19f is connected to a hollow portion 24 formed around the rotating shaft 13. The hollow portion 24 is sealed by a magnetic fluid seal near the bearing and is open to the upper end, i.e., the interior of the reaction tube 2. In addition, a space is formed from the hollow portion 24 to the upper surface of the protective plate 12, and the space is continuous to the gap formed between the bottom plate 40 of the heat-insulating structure 15 and the protective plate 12, thereby forming a first exhaust gas flow path 25 (refer to Figure 8 In addition, the rotating shaft 13 also has a hollow structure, and the first exhaust gas is introduced into the rotating shaft 13 through a through hole provided on the side near the magnetic seal of the rotating shaft 13, and is further introduced into the thermal insulation structure 15.

[0037] The second purge gas supply portion (supply mechanism) is provided with a gas supply pipe 19g. An MFC 21g and a valve 22g are arranged in sequence on the gas supply pipe 19g from the upstream direction. The downstream end of the gas supply pipe 19g passes through the cover 9, and a second purge gas supply port is formed on the upper surface of the cover 9. Thus, the second purge gas supply port is formed on the upper surface of the cover 9 and opens to the second purge gas flow path 27. The opening position of the second purge gas supply port is on the side of the nozzles 23a to 23c. A flexible piping such as a bellows is used for the gas supply pipe 19a between the valve 22g and the second purge gas supply port. The second purge gas flow path (purge gas supply line) 27 is roughly annular (Loop) and is formed around the entire circumference of the lower surface of the protective plate 12.

[0038] An exhaust pipe 32 is installed at the exhaust port 26 of the reaction tube 2. The exhaust pipe 32 is connected to a vacuum pump 35 serving as a vacuum exhaust device via a pressure sensor 33 and an APC (Auto Pressure Controller) valve 34. The pressure sensor 33 is a pressure detector (pressure detection unit) that detects the pressure in the processing chamber 8, and the valve 34 is a pressure regulator (pressure regulating unit, regulating valve with adjustable opening). With such a structure, the pressure in the processing chamber 8 can be adjusted to a processing pressure suitable for the processing. The exhaust pipe 32 is set at a position opposite to the nozzles 23a to 23c. The exhaust system is mainly composed of the exhaust pipe 32, the APC valve 34, and the pressure sensor 33. The vacuum pump 35 can also be included in the exhaust system.

[0039] A protective plate 12 is formed from a heat-resistant, corrosion-resistant material (corrosion-resistant material) such as quartz, disposed on the upper surface of the lid 9. The protective plate 12 covers the metal lid 9, thereby preventing the process gas from contacting the lid 9 and, in turn, preventing the process gas from corroding or degrading the lid 9.

[0040] The following targets Figure 2 and Figure 3 , explaining how the structure of the protection plate 12 is to concentrate the first exhaust gas 53 on the base of the nozzles 23a to 23c, and to supply the second exhaust gas 54 to the other parts. Figure 2 and Figure 3 In FIG, the airflow of the first row of clean gas 53 is represented by a solid arrow, and the airflow of the second row of clean gas 54 is represented by a dotted arrow. Figure 2 and Figure 3 The nozzles 23a to 23c (the installation positions of the nozzles 23a to 23c) are represented by holes.

[0041] like Figure 2 As shown, the surface of the protective plate 12 is formed with a thick portion 45, a first thin portion 28, a second thin portion 47, and a third thin portion 48. The thick portion 45 is a partially cutout, generally circular shape, with a hole 46 provided at its center for inserting the rotating shaft 13. Furthermore, the thick portion 45, the first thin portion 28, the second thin portion 47, and the third thin portion 48 form a disc-shaped circular plate portion.

[0042] The first thin-walled portion 28 is formed on the outer periphery of the thick-walled portion 45. In other words, when viewed from the central axis of the processing container 7, the first thin-walled portion 28 is positioned outside the outer periphery of the bottom plate 40 of the thermal insulation structure 15. The first thin-walled portion 28 is thinner than the thick-walled portion 45 and has a partially cutout annular shape. Furthermore, a sidewall portion 29 is formed perpendicularly and continuously with the outer periphery of the first thin-walled portion 28. The first thin-walled portion 28 is provided with a plurality of mounting holes 28a for inserting screws. In other words, the mounting holes 28a are positioned outside the outer periphery of the bottom of the thermal insulation structure 15. The portion of the first thin-walled portion 28 that is cut out is the second thin-walled portion 47, which has a smaller thickness than the first thin-walled portion 28. The second thin-walled portion 47 is formed at a location corresponding to the location of the base of the nozzles 23a to 23c and their surrounding areas (opening 2E). Furthermore, the sidewall portion 29 is not formed at the outer periphery of the second thin-walled portion 47.

[0043] The portion of the thick-walled portion 45 that is cut out is a third thin-walled portion 48, which has a thickness smaller than that of the thick-walled portion 45 but the same or approximately the same as that of the first thin-walled portion 28. The third thin-walled portion 48 is formed continuously radially inward from the second thin-walled portion 47, is concentric with the second thin-walled portion 47, and is an arc-shaped portion of a predetermined width. Furthermore, the thickness of the third thin-walled portion 48 is preferably greater than that of the second thin-walled portion 47. By adopting the structure described above, the flow resistance in the direction from the center of the protective plate 12 toward the nozzles 23a-23c can be reduced. In other words, the supply amount of the first exhaust gas 53 from the center of the protective plate 12 toward the nozzles 23a-23c can be increased.

[0044] This reduces the concentration of the processing gas at the base of the nozzles 23a to 23c and their surrounding areas, suppressing the adhesion of by-products, thereby suppressing particle generation and improving productivity.

[0045] Furthermore, the outer diameter of the bottom plate 40 is smaller than that of the thick-walled portion 45, and the inner peripheral end of the third thin-walled portion 48 is positioned closer to the center than the inner peripheral end of the bottom plate 40. Consequently, a gap is formed between the bottom plate 40 and the third thin-walled portion 48, which is larger than the gap between the bottom plate 40 and the thick-walled portion 45. Therefore, the flow resistance in the first purge gas flow path 25 in this gap is smaller than the flow resistance between the bottom plate 40 and the thick-walled portion 45.

[0046] In addition, for areas where the concentration of raw material gas or reaction gas is high and the first exhaust gas 53 must be concentrated, the area formed by connecting the two ends of this area with the center of the protective plate 12 with a line is formed into a fan-shaped area, and the second thin-walled portion 47 and the third thin-walled portion 48 are located within the fan-shaped area. The center angle (opening angle) α of the fan-shaped area is, for example, 60°, and can be appropriately set within the range of 0°<α<120° based on the number of nozzles installed. In addition, if the center angle α exceeds 120°, the concentration of the process gas may exceed the critical value, causing byproducts to adhere to the processing container 7, which is not preferred.

[0047] The second thin portion 47 and the third thin portion 48 are formed at positions facing the exhaust port 26 (on the opposite side of the exhaust port 26 ), for example.

[0048] like Figure 3 As shown, a groove 27 (hereinafter referred to as a second exhaust gas flow path) having a predetermined width and depth is provided on the back side of the thick portion 45 along the outer circumferential end of the thick portion 45. The second exhaust gas flow path 27 is composed of the following components: a first flow path 27a, which curves circumferentially and extends along the inner circumferential end of the third thin portion 48; and an annular second flow path 27b, which curves radially outward at the side end of the third thin portion 48, then curves circumferentially along the outer circumferential end of the thick portion 45, extending along the outer circumferential end of the thick portion 45 and continuing with the first flow path 27a.

[0049] A step portion 52 is formed on the back side of the first thin-walled portion 28 in the back side of the protective plate 12 to reduce the thickness on the outside of the second exhaust gas flow path 27. Therefore, when the protective plate 12 is set on the cover 9, the center portion (the back side of the thick-walled portion 45) 51 on the center side of the second exhaust gas flow path 27 contacts the upper surface of the cover 9, and a gap 30 of a predetermined thickness is formed between the upper surface of the cover 9 and the step portion 52. However, the first thin-walled portion 28 around the mounting hole 28a has a protrusion 28b (refer to FIG. 2 ) that protrudes toward the cover 9 and makes surface contact with the upper surface of the cover 9. Figure 4In other words, protective plate 12 is formed into a plate (thin sheet) shape and is arranged so that a gap of a predetermined thickness is formed between it and at least a portion of the surface of the portion of cover 9 exposed to the atmosphere, and it is in surface contact with the surface of the other portions of cover 9. This prevents lifting and movement of protective plate 12 even when exhaust gas is flowing. In addition, no stepped portion 52 is formed on the back surface of protective plate 12, that is, on the back surface of second thin-walled portion 47 and third thin-walled portion 48, to reduce the thickness.

[0050] The gas supply pipe 19g of the second purge gas supply unit is connected to the second flow path 27b, supplying the second purge gas 54 from the second flow path 27b. The second purge gas 54 supplied to the second flow path 27b flows sequentially through the second flow path 27b, the first flow path 27a, and finally through the second flow path 27b. At this point, the upper surface of the cover 9 contacts the center portion 51, forming a gap 30 between the upper surface of the cover 9 and the step portion 52. Consequently, as the second purge gas 54 flows through the first flow path 27a and the second flow path 27b, it flows out through the gap 30 and passes through the gap 31 between the inner circumference of the manifold 5 and the sidewall 29, being discharged into the furnace opening while being purged. The second purge gas 54 released into the furnace opening is exhausted through the exhaust port 26.

[0051] The formation of sidewalls 29 reduces the cross-sectional area of the flow path for the second purge gas 54, thereby reducing the supply of the second purge gas 54 and fully purging the inner circumference of the manifold 5, significantly reducing the concentration of the process gas. This prevents the deposition of byproducts and the generation of particles on the inner circumference of the manifold 5, thereby increasing productivity.

[0052] Furthermore, the gap 30 connecting the first and second flow paths 27a, 27b to the furnace opening is formed with a constant spacing throughout the entire circumference by the step 52. This allows the exhaust gas to flow out of the furnace opening relatively evenly, at least in the second flow path 27b. Meanwhile, the gap length in the first flow path 27a is approximately half that of the second flow path 27b, reducing the conductivity and resulting in a smaller outflow rate. The third thin-walled portion 48 increases the amount of first exhaust gas by a greater amount than it decreases, resulting in enhanced exhaust gas supply to the nozzles 23a-23c. The gap between the bottom plate 40 and the third thin-walled portion 48 is open at its distal end, facing the opening 2E provided in the lower portion of the supply buffer chamber 2A. This prevents the protective plate 12 from floating, even though the structure makes it easier to blow in flushing exhaust gas.

[0053] use Figure 4 and Figure 5, explaining the installation method (fixing method) of the protective plate 12 to the cover 9. The cover 9, the protective plate 12 and the mounting parts described later constitute a furnace mouth assembly. The protective plate 12 is fixed to the cover 9 by inserting the shoulder bolt (screw) 61 into the mounting hole 28a provided in the first thin-walled portion 28. At this time, the protrusion 28b is in surface contact with the upper surface of the cover 9. In addition, when viewed from the central axis of the processing container 7, the mounting hole 28a is arranged on the outside of the outer periphery of the bottom plate 40 of the thermal insulation structure 15. Therefore, the shoulder bolt 61 protruding upward can be provided without changing the gap with the thermal insulation structure 15.

[0054] The shoulder bolt 61 has an unthreaded cylindrical portion on the head side and threads on the front end side. A spring washer (spring) 62, which serves as an elastic body, is inserted between the lower surface of the head of the shoulder bolt 61 and the surface of the first thin-walled portion 28 of the protective plate 12 (i.e., the round head). Furthermore, a washer (gasket) 63 is inserted between the spring washer 62 and the surface of the first thin-walled portion 28. The shoulder bolt 61, spring washer 62, and washer 63 constitute a mounting member (fixing member). Furthermore, the cover portion 9 has an internal threaded portion (screw hole) 9a formed therein, which is threadedly engaged with the external threaded portion of the shoulder bolt 61.

[0055] The washer 63 prevents direct contact between the spring washer 62 and the surface of the first thin-walled portion 28. Furthermore, the thickness of the washer 63 prevents deformation of the washer 63 itself. Furthermore, the surface area of the washer 63 is preferably as large as possible within the installation space. This allows the force transmitted from the spring washer 62 to the first thin-walled portion 28 to be dispersed over the surface area of the washer 63, avoiding point stress and transmitting only surface stress to the surface of the first thin-walled portion 28. The surface weighting of the washer 63 prevents the generation of particles caused by friction.

[0056] The spring force (=spring constant) of the spring washer 62 is set by taking into account the buoyancy generated by the jet of the second exhaust gas 54 on the bottom surface of the first thin-walled portion 28, as well as the strength of the first thin-walled portion 28. Furthermore, the collar bolt 61 is fully tightened and secured to the cover 9. This allows the pressing force to be managed without having to consider the tightening torque of the collar bolt 61.

[0057] Generally, spring washers are used for full tightening. In this case, when tightening a screw (bolt) without a shoulder to the limit, the spring washer is compressed to the point where it can no longer deform (no compression). In this state, the tightening force of the screw is directly transmitted to the mating part. This means that the pushing force is determined not by the elasticity of the spring but by the tightening force of the screw. This makes it impossible to manage the pushing force.

[0058] Therefore, in this embodiment, the spring washer 62 is not completely locked, but rather is configured to push the protective plate 12 with a controlled, predetermined spring force (pressure). In other words, the mounting member applies a controlled, predetermined pressure (exceeding the force of gravity) to secure the protective plate 12 to the lid 9. This prevents damage to the lid 9 during installation and prevents the protective plate 12 from floating or moving due to pressure fluctuations.

[0059] The material of the shoulder bolt 61 and the washer 63 can be metal or non-metal (such as resin). The material should be selected according to the environment in which it is used and the necessary strength is ensured. The material of the spring washer 62 is metal. As long as the spring characteristics can be obtained, the shape of the spring washer 62 can be Figure 4 Coil type shown (compression coil), Figure 5 The disc spring type shown, or the wave spring type not shown, etc. are not limited. These spring washers 62 have a larger deformation range than common C-shaped spring washers, and push force management is also easier.

[0060] The shoulder bolt 61, washer 63, and spring washer 62 are preferably made of a nickel-based alloy such as Hastelloy, which is corrosion-resistant. When using such a material, the surface is modified by electrolytic composite polishing to minimize surface roughness. This can inhibit corrosion and particle generation.

[0061] A smaller spring constant (greater displacement) is less susceptible to tolerances and allows for more precise control of pushing force. However, this also increases the amount of protrusion from the screw head. Therefore, to achieve appropriate precision within the limited installation space, it is best to use custom-made shoulder bolts 61 and spring washers 62 rather than standard products.

[0062] As for the number of tightening turns (the number of turns of the boss bolts 61, the number of turns of the mounting holes 28a), the weight of the protective plate 12 and the force (buoyancy) applied to the protective plate 12 are calculated, and the necessary number of tightening turns is determined after comparing with the pressing force. In other words, a plurality of mounting parts are provided, and a predetermined pressure is applied in the same direction at a plurality of corresponding parts so that the protective plate 12 contacts the cover 9 and the protective plate 12 is mounted on the cover 9. As a result, the pushing force is dispersed, and local floating can be prevented. In addition, the boss bolts 61 can also be arranged near the location where the floating force is generated. The number of mounting holes 28a is preferably 3 or more. In addition, the protective plate 12 can be floated from the cover 9 by an external force exceeding the predetermined pressure (for example, pressure on the back of the protective plate 12).

[0063] like Figure 6As shown, the control unit (control unit), or controller 36, is configured as a computer and includes a CPU (Central Processing Unit) 36a, RAM (Random Access Memory) 36b, a storage device 36c, and an I / O port 36d. RAM 36b, storage device 36c, and I / O port 36d are configured to exchange data with CPU 36a via an internal bus 36e. An input / output device 37, such as a touch panel, is connected to controller 36. An external storage device 38 can also be connected to controller 36.

[0064] The storage device 36c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. The storage device 36c can readable contain: a control program for controlling the actions of the processing device 1, a process recipe that records the steps or conditions of the substrate processing described later, etc. The process recipe is a combination of the various steps in the substrate processing described later to perform the function of the program, and the processing device 1 is executed by the controller 36 to obtain a predetermined result. Hereinafter, the process recipe or control program, etc. will be simply referred to as a program. In addition, the process recipe is also referred to as a recipe. The case where the word program is mentioned in this specification includes the case where only the recipe is included, the case where only the control program is included, or the case where both are included. RAM36b is configured as a storage area (working area) to temporarily hold the program or data read by CPU36a.

[0065] The I / O port 36 d is connected to the aforementioned MFCs 21 a to 21 g , valves 22 a to 22 g , pressure sensor 33 , APC valve 34 , vacuum pump 35 , temperature sensor 4 , heater 3 , rotation mechanism 16 , boat elevator 17 , and the like.

[0066] The CPU 36a is configured to read and execute a control program from the storage device 36c, and to read a recipe from the storage device 36c based on input of an operation command from the input / output device 37. The CPU 36a is configured to control, in accordance with the contents of the read recipe, the flow rate adjustment of various substances (gases) by the MFCs 21a to 21g, the opening and closing of the valves 22a to 22g, and the like. Furthermore, in accordance with the contents of the read recipe, the CPU 36a is configured to control, in accordance with the contents of the read recipe, the opening and closing of the APC valve 34, the pressure adjustment of the APC valve 34 by the pressure sensor 33, the start and stop of the vacuum pump 35, the temperature adjustment of the heater 3 by the temperature sensor 4, and the like. Furthermore, in accordance with the contents of the read recipe, the CPU 36a is configured to control, in accordance with the contents of the read recipe, the rotation and rotation speed adjustment of the wafer boat 14 by the rotation mechanism 16, and the raising and lowering of the wafer boat 14 by the boat elevator 17.

[0067] The controller 36 is configured to be able to install the above-mentioned program stored in the external storage device 38 on the computer. The external storage device 38 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or an SSD. The storage device 36c or the external storage device 38 is configured as a computer-readable storage medium. Hereinafter, these will also be collectively referred to as storage media. When the term storage medium is mentioned in this specification, it includes a case where only the storage device 36c is included, a case where only the external storage device 38 is included, or a case where both are included. In addition, the act of providing the program to the computer may be carried out without using the external storage device 38, but using communication means such as the Internet or a dedicated line.

[0068] (2) Substrate processing

[0069] use Figure 7 The following example describes a method for processing a substrate using the processing apparatus 1 described above, specifically, forming a predetermined film on the surface of a substrate wafer W as a step in the semiconductor device manufacturing process. In the following description, the operations of the various components of the processing apparatus 1 are controlled by the controller 36.

[0070] The term "wafer" used in this specification sometimes refers to the wafer itself, and sometimes refers to a laminate consisting of a wafer and a specific layer or film formed on its surface. The term "wafer surface" used in this specification sometimes refers to the surface of the wafer itself, and sometimes refers to the surface of a specific layer, etc. formed on the wafer. When this specification states "forming a specific layer on a wafer", it sometimes refers to forming a specific layer directly on the surface of the wafer itself, and sometimes refers to forming a specific layer on a layer, etc. formed on the wafer. When the term "substrate" is used in this specification, it is synonymous with the use of the term "wafer". In addition, the processing temperature referred to in this specification refers to the temperature of the wafer W or the temperature inside the processing chamber 8.

[0071] (Wafer loading: S61 and wafer boat introduction: S62)

[0072] When multiple wafers W are loaded into the wafer boat 14 (wafer loading), the wafer boat 14 is moved into the processing chamber 8 by the wafer boat elevator 17 (wafer introduction), and then the lower portion of the reaction tube 2 is hermetically sealed (sealed) by the lid 9. At this time, the first purge gas 53 is supplied from the first purge gas supply unit to the base of the nozzles 23a to 23c through the first purge gas flow path 25 in the third thin-walled portion 48, which serves as a gap. In addition, the second purge gas 54 is supplied from the second purge gas supply unit through the second purge gas flow path 27 to the space between the side wall portion 29 and the manifold 5. The supply of the first purge gas 53 and the second purge gas 54 continues at least until the film formation process is completed. Here, nitrogen (N2), for example, can be used as an inert gas for the first purge gas 53 and the second purge gas 54.

[0073] (Decompression and vacuuming: S63)

[0074] Vacuum pump 35 performs vacuum evacuation (decompression evacuation) to a predetermined pressure (vacuum level) within processing chamber 8. Pressure sensor 33 measures the pressure within processing chamber 8, and feedback control of APC valve 34 is performed based on the measured pressure information. Heater 3 heats wafers W within processing chamber 8 to a predetermined temperature. To maintain a predetermined temperature distribution in processing chamber 8, feedback control of heater 3 is performed based on temperature information detected by temperature sensor 4. Rotation mechanism 16 then begins rotating wafer boat 14 and wafers W.

[0075] (Film forming process: S64)

[0076] [Raw material gas supply process]

[0077] Once the temperature within the processing chamber 8 is maintained at the preset processing temperature, the raw material gas is supplied to the wafers W within the processing chamber 8. The raw material gas is controlled to the desired flow rate by the MFC 21a and supplied to the processing chamber 8 via the gas supply pipe 19a and the nozzle 23a. At this time, inert gas is supplied to the furnace opening from the first and second purge gas supply units. This allows the first purge gas 53 to centrally purge the base and surrounding areas of the nozzles 23a-23c, while the second purge gas 54 purges the remaining areas, diluting the raw material gas concentration at the furnace opening. Furthermore, during this process, the inert gas supply from the first and second purge gas supply units can be temporarily increased.

[0078] [Raw material gas exhaust process]

[0079] Next, the supply of the raw material gas is stopped, and the processing chamber 8 is evacuated by the vacuum pump 35. At this time, an inert gas may be supplied from the inert gas supply unit into the processing chamber 8 (inert gas purge). For example, N2 gas may be used as the inert gas.

[0080] [Reaction Gas Supplying Step]

[0081] Next, reactive gas is supplied to the wafers W within the processing chamber 8. The reactive gas is controlled to the desired flow rate by MFC 21b and supplied into the processing chamber 8 via gas supply pipe 19b and nozzle 23b. At this time, inert gas is supplied to the furnace opening from the first and second purge gas supply units. This allows concentrated purge of the bases and surrounding areas of nozzles 23a-23c while also purging other areas, diluting the reactive gas concentration at the furnace opening.

[0082] [Reaction gas exhaust process]

[0083] Next, the supply of the reaction gas is stopped, and the processing chamber 8 is evacuated by the vacuum pump 35. At this time, an inert gas may be supplied from the inert gas supply unit into the processing chamber 8 (inert gas purge).

[0084] By performing the cycle of the above four steps a predetermined number of times (one or more), a film of a predetermined composition and a predetermined film thickness can be formed on the wafer W.

[0085] (Drainage process: S65 and atmospheric pressure recovery: S66)

[0086] After the film formation process is completed, an inert gas is supplied from each of the nozzles 23a to 23c into the processing chamber 8 as a purge gas, and then exhausted from the exhaust pipe 32 via the exhaust port 26. Thus, the processing chamber 8 is purged, and the gas and by-products remaining in the processing chamber 8 are removed from the processing chamber 8 (post-purge). Afterwards, the atmosphere in the processing chamber 8 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 8 is returned to normal pressure (atmospheric pressure recovery).

[0087] (Wafer boat export: S67 and wafer unloading: S68)

[0088] Thereafter, the lid 9 is lowered by the boat elevator 17 to unload the boat 14 from the reaction tube 2 (boat unloading). Thereafter, the processed wafers W are taken out of the boat 14 (wafer unloading).

[0089] Although the film formation process is completed in step S68, maintenance processing is periodically performed thereafter to remove by-products accumulated in the furnace and the nozzle. The maintenance processing is described below.

[0090] (Jingzhou import: S69)

[0091] The wafer boat 14, unloaded with wafers W (wafer loading), is moved into the processing chamber 8 (wafer introduction) by the boat elevator 17. The reaction tube 2 is then hermetically sealed (sealed) below the bottom by the lid 9. At this point, a first purge gas 53 is supplied from the first purge gas supply unit to the bases of the nozzles 23a-23c via the first purge gas flow path 25 in the third thin-walled portion 48, which serves as the gap. Furthermore, a second purge gas 54 is supplied from the second purge gas supply unit via the second purge gas flow path 27 to the gap 31 between the sidewall portion 29 and the manifold 5. For example, N₂ gas can be used as an inert gas for the first and second purge gases 53, 54.

[0092] (Decompression and vacuuming: S70)

[0093] The vacuum pump 35 performs vacuum exhaust (decompression exhaust) to a predetermined pressure (vacuum degree) in the processing chamber 8. The pressure in the processing chamber 8 is measured by the pressure sensor 33, and the APC valve 34 is feedback-controlled based on the measured pressure information.

[0094] (Flushing and draining process: S71)

[0095] From the inert gas supply unit, a large amount of inert gas is instantaneously supplied into the processing chamber 8 as a purge gas (flushing supply) via the gas supply pipes 19c-19e, MFCs 21c-21e, valves 22c-22e, and nozzles 23a-23c. The inert gas is then exhausted from the exhaust pipe 32 via the exhaust port 26. This purifies the processing chamber 2018, and any remaining gases and byproducts within the processing chamber 8 are removed from the processing chamber 8 (flushing exhaust). At this time, a large amount of first purge gas 53 is instantaneously supplied from the first purge gas supply unit via the first purge gas flow path 25 in the third thin-walled portion 48, which serves as a gap, to the bases of the nozzles 23a-23c. Furthermore, a large amount of second purge gas 54 is instantaneously supplied from the second purge gas supply unit via the second purge gas flow path 27 to the space between the sidewall portion 29 and the manifold 5.

[0096] In addition, a third purge gas 55 is supplied to the processing chamber 8 in large quantities and instantaneously from the third purge gas supply unit. The following describes the method for supplying the third purge gas. First, with valves 22a and 25a closed, valve 22c is opened to allow the inert gas to flow into the gas supply pipes 19c and 19a. The inert gas is supplied to the tank 24a and stored in the tank 24a by adjusting the flow rate by MFC 21c. When a predetermined pressure and a predetermined amount of inert gas are stored in the tank 24a, valve 22c is closed to seal (block) the inert gas in the tank 24a. Through this series of actions, the action of filling the tank 24a with inert gas is completed. Thereafter, valve 22c is kept in a closed state, and valve 25a is opened. Thus, the high-pressure inert gas stored in the tank 24a is supplied to the processing chamber 8 in one breath (in a pulsed manner) via the gas supply pipe 19a and the nozzle 23a.

[0097] use Figure 8 The gas flow during purge and exhaust will be described. The purge and exhaust gas, or first exhaust gas 53, supplied from the first exhaust gas supply unit rises along the circumference of the rotating shaft 13 before changing its path to a horizontal position. While exhausting the gap between the bottom plate 40 and the protective plate 12 (i.e., the first exhaust flow path 25), it is supplied to the furnace opening (i.e., below the processing vessel 7). Specifically, the first exhaust gas 53 exhausts the area around the rotating shaft 13 upstream and the exposed surface of the protective plate 12 or the bases of the nozzles 23a-23c downstream, ultimately being discharged through the exhaust port 26 formed at the lower end of the reaction tube 2.

[0098] The protective plate 12 has a first thin-walled portion 28 extending to the vicinity of the manifold 5, excluding the area where the nozzles 23a to 23c are located. Furthermore, a sidewall portion 29 extending perpendicularly along the inner wall of the manifold 5 is formed at the outer peripheral end of the first thin-walled portion 28. A gap 30 of a predetermined length is formed between the first thin-walled portion 28 and the cover 9, and a gap 31 of a predetermined length is also formed between the sidewall portion 29 and the manifold 5.

[0099] The flushing purge gas supplied to the second purge gas flow path 27, or second purge gas 54, flows radially outward from the second purge gas flow path 27, purges the back surface of the protection plate 12 and the inner surface of the manifold 5 while passing through the gap 31, and is then exhausted from the exhaust port 26. At this time, the pressure behind the protection plate 12 momentarily rises above the pressure inside the furnace.

[0100] If the protective plate 12 is not fixed to the cover 9, the pressure on the back of the protective plate 12 may cause the protective plate 12 to rotate or float. In this case, the second exhaust gas 54 will flow radially inward from the second exhaust gas flow path 27, pass through the gap between the back of the protective plate 12 and the upper surface of the cover 9, and be discharged through the hole 46.

[0101] However, in the embodiment, the protective plate 12 is fixed to the cover 9, thereby suppressing rotation and lifting (movement) of the protective plate 12. This reduces damage to the protective plate 12, such as cracks or defects, caused by movement. Furthermore, the pressure on the back surface of the protective plate 12 is preferably managed to a predetermined pressure. In other words, the predetermined pressure is preferably set so that the protective plate 12 does not lift from the cover 9 during flushing.

[0102] Furthermore, the third purge gas 55 supplied from the nozzle 23 a serving as the flushing purge supply line is introduced into the second purge gas flow path 27 through the gaps 31 and 30 , and thus has little influence.

[0103] (Atmospheric pressure recovery: S72)

[0104] After the flushing and draining process, the atmosphere in the processing chamber 8 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 8 is restored to normal pressure (atmospheric pressure restoration).

[0105] (Jingzhou export: S73)

[0106] Thereafter, the lid 9 is lowered by the boat elevator 17 , and the wafer boat 14 is unloaded from the reaction tube 2 (wafer boat unloading).

[0107] Generally, to prevent metal contamination of wafers, many quartz or ceramic parts made of materials other than metal are placed inside the reactor (processing chamber). These parts are categorized as heavy or lightweight. Quartz and ceramic parts are often prone to cracking or defects, so they are not secured with fasteners such as screws or bolts. Instead, they are simply placed in predetermined locations within the reactor.

[0108] However, gas flows within the reactor, causing pressure fluctuations. If a large gas flow is supplied, causing significant pressure fluctuations, and lightweight quartz or ceramic parts, they may move horizontally, front and back, left and right, or float upward, risking damage such as cracks or defects. Cracks or defects within the reactor can cause particles, leading to decreased productivity and reduced production efficiency.

[0109] In this embodiment, the protective plate 12 , which is a quartz component that is prone to cracking or defects, is immobilized and can be fixed without cracking or defects.

[0110] In the embodiment, flushing and draining are used as examples to illustrate the case where a large flow rate of gas is supplied or a large pressure fluctuation occurs, but the following situations are also possible. In these cases, the back pressure of the protection plate 12 is still managed to be a predetermined pressure, thereby preventing the protection plate 12 from floating.

[0111] (1) When gas remains in the processing container 7, the APC valve 34 is fully opened to exhaust (rapidly reduce pressure);

[0112] (2) In the case of a flushing and blowing supply system, when gas is still stored in the tank 24a storing the process gas (for example, raw material gas), the valve 25a serving as an on-off valve provided in the gas supply pipe (piping) 19a connecting the tank 24a and the processing container 7 is opened, and flushing and blowing are performed into the processing container 7 from the nozzle 23a.

[0113] The above embodiments illustrate applications in a batch-type substrate processing apparatus that processes multiple substrates at a time. The present invention is not limited to this embodiment and can also be appropriately applied to single-wafer processing apparatuses that process one or more substrates at a time, for example, by providing a protective member at the bottom of the processing chamber. Alternatively, the present invention can be broadly applied to both hot-wall and cold-wall substrate processing apparatuses.

[0114] Explanation of symbols

[0115] 7—processing container; 9—cover (furnace mouth component); 12—protective plate (protective component).

Claims

1. A substrate processing device, characterized in that: have: a processing container that accommodates a substrate to be processed therein; a furnace port component, at least a portion of which faces the interior space of the processing container; a protective member configured to cover the portion facing the interior space; as well as A mounting member applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space, and mounts the protection member to the furnace port member.

2. The substrate processing apparatus according to claim 1, wherein: The protective member is provided so as to form a gap of a predetermined height with at least a portion of the surface of the portion facing the interior space, and to be in surface contact with the surface of the other portion of the portion facing the interior space. The invention further includes an exhaust gas supply line for supplying an exhaust gas to the gap.

3. The substrate processing apparatus according to claim 1, wherein: The mounting members are provided in plurality, and the predetermined pressure is applied in the same direction at corresponding locations to contact the furnace opening component, and the protective component is mounted on the furnace opening component so that the protective component can float from the furnace opening component by an external force exceeding the predetermined pressure.

4. The substrate processing apparatus according to claim 1, wherein: The apparatus further comprises an exhaust system having a regulating valve with a variable opening degree, wherein the regulating valve is fully opened to exhaust gas when gas remains in the processing container; or a flushing and exhaust supply line is provided, wherein the flushing and exhaust supply line is configured to supply a flushing and exhaust gas into the processing container. The predetermined pressure is set so that the protection member does not float from the furnace port member when the flushing is supplied or when the regulating valve is opened.

5. The substrate processing apparatus according to claim 1, wherein: The invention also includes a purge gas flow supply system, the purge gas flow supply system including a tank for storing process gas and an on-off valve arranged in a pipe connecting the tank and the processing container, and configured so that when the tank stores gas, the on-off valve can be opened to supply purge gas flow into the processing container. The predetermined pressure is set so as not to cause the protection member to float from the furnace port member when the flushing supply is performed while the on-off valve is kept open.

6. The substrate processing apparatus according to claim 1, wherein: The mounting member includes a spring.

7. The substrate processing apparatus according to claim 1, wherein: The furnace port member is a cover that hermetically closes the lower end opening of the processing container.

8. The substrate processing apparatus according to claim 4, wherein: The heat insulating component is further provided, and the heat insulating component is arranged at a position closer to the substrate to be processed than the protective component. There is a gap between the protective component and the bottom of the thermal insulation assembly, The rinse drain supply path has a nozzle extending in the processing container along the loading direction of the substrate, The processing container has a nozzle arrangement portion that stores the nozzle at a position that does not interfere with the substrate. The end of the gap is opened in the processing container so as to face the direction of the opening of the nozzle arrangement portion.

9. The substrate processing apparatus according to claim 1, wherein: The mounting member includes: a screw inserted into a mounting hole provided in the protection component and screwed into a screw hole provided in the furnace port component; an elastic body through which the screw is inserted; and a washer provided between the elastic body and the protection component.

10. The substrate processing apparatus according to claim 9, wherein: The screw, the elastomer and the washer are all nickel-based alloys of the same composition.

11. The substrate processing apparatus according to claim 9, wherein: The elastic body includes at least one of a compression coil spring, a disc spring, and a wave spring washer.

12. The substrate processing apparatus according to claim 9, wherein: The screw is a shoulder bolt that is completely locked on the furnace mouth component.

13. The substrate processing apparatus according to claim 1, wherein The protection component has three or more mounting holes for respectively engaging with the mounting pieces, and has protrusions around the mounting holes. The protrusions protrude toward the furnace port component and have contact surfaces with the furnace port component.

14. The substrate processing apparatus according to claim 13, wherein: The heat insulating component is further provided, and the heat insulating component is arranged at a position closer to the substrate to be processed than the protective component. The mounting hole is arranged outside an outer circumference of a bottom portion of the thermal insulation assembly when viewed from a central axis of the processing container.

15. A furnace port assembly for a substrate processing device, characterized in that: have: a cover that closes a lower end opening of a processing container for processing a substrate and is at least partially exposed to the atmosphere in the processing container; a protective member configured to cover a portion of the cover facing the interior space of the processing container; as well as A mounting member applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space and mounts the protection member to the cover.

16. A substrate processing method, characterized in that: have: The step of loading a substrate into a substrate processing apparatus comprising: a processing container for accommodating a substrate to be processed; a furnace opening member, at least a portion of which faces an interior space of the processing container; and a protective member provided to cover the portion of the furnace opening member facing the interior space. and a mounting member that applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space and mounts the protection member to the furnace port member; as well as A process of processing the substrate.

17. A method for manufacturing a semiconductor device, characterized in that: have: The step of loading a substrate into a substrate processing apparatus comprising: a processing container for accommodating a substrate to be processed; a furnace opening member, at least a portion of which faces an interior space of the processing container; and a protective member provided to cover the portion of the furnace opening member facing the interior space. and a mounting member that applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space and mounts the protection member to the furnace port member; as well as A process of processing the substrate.

18. A program, characterized in that The computer causes the substrate processing apparatus to execute the following steps, which include: The step of loading the substrate into a substrate processing apparatus, the substrate processing apparatus comprising: a processing container for accommodating the substrate to be processed; a furnace opening member, at least a portion of which faces the interior space of the processing container; and a protective member provided to cover the portion of the furnace opening member facing the interior space; and a mounting member that applies a predetermined pressure that is managed to bring the protection member into contact with the portion facing the interior space and mounts the protection member to the furnace port member; as well as The step of processing the substrate.

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