A collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers

Abstract

The present invention discloses a collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers, which relates to the technical field of radiation effects of semiconductor devices and includes: a continuous X-ray source system for generating continuous X-rays with set intensity and energy spectrum to simulate the total dose effect; a pulsed laser system for generating pulsed lasers with set parameters to simulate the transient ionization effect; a detection system for real-time detection of the steady-state and transient electrical responses of the semiconductor device under test to the mixed irradiation in the radiation field; and a control and testing system for synchronously regulating the spatial position and time parameters of the continuous X-ray source system and the pulsed laser system, and collecting response data of the semiconductor device under test in the collaborative ionizing radiation field. The present invention introduces the synergistic effect of continuous X-rays and pulsed lasers, as well as precise spatiotemporal alignment and real-time detection technology, significantly improving the accuracy, flexibility, and practicality of radiation simulation.

Description

Technical Field

[0001] The present invention relates to the technical field of radiation effects of semiconductor devices, and in particular to a collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers. Background Art

[0002] The real nuclear radiation environment usually contains multiple radiation factors. For semiconductor materials or devices, these radiation factors will cause different radiation damage effects. These radiation effects are not independent of each other. The coupling between multiple effects may cause the actual damage to be less than or greater than simple superposition. This is commonly known as the synergistic damage effect.

[0003] The radiation synergistic damage effect of semiconductor materials and devices involves complex steady-state and transient synergistic processes, which has always been a key and difficult issue in the field of radiation hardening. In particular, in many application scenarios, semiconductor materials and devices are often affected by both the total dose effect and the dose rate effect. The total dose effect will cause the semiconductor device to accumulate oxide / interface charge and trapped charge, resulting in long-term damage. The dose rate effect, on the other hand, will generate electron-hole pairs through Coulomb scattering when passing through the sensitive area of ​​the semiconductor device, forming a transient photocurrent or deposited charge. When the two effects occur simultaneously, the joint effect caused is often different from the simple superposition of the two radiation effects. For this reason, constructing a steady-state / transient ionizing synergistic radiation environment is of great significance for studying the changes in the electrical properties of devices or materials under real radiation environments.

[0004] With the continuous advancement of X-ray and pulsed laser technology, significant breakthroughs have been made in both X-ray-based and pulsed laser-based simulations of total dose effects and dose rate effects. X-rays, based on Compton scattering and the photoelectric effect, can ionize materials and accumulate interface and trapped charges within them. As an efficient and feasible method for studying total dose effects, X-rays have attracted considerable attention from research institutions both domestically and internationally. Equipped with X-ray source irradiation platforms, they have conducted extensive research on total dose effects and developed corresponding testing standards. On the other hand, pulsed lasers with specific parameters, based on the photoelectric effect, can produce electrical responses within semiconductors similar to those of transient ionizing radiation such as gamma rays. Leveraging this characteristic, pulsed lasers can effectively simulate dose rate effects. Currently, numerous research institutions have conducted extensive laser simulation research and use laser simulation technology as an important auxiliary research tool for studying the effects of transient ionizing radiation.

[0005] However, the aforementioned simulations only focus on a single ionization effect. With the miniaturization and integration of X-ray and pulsed laser sources, effectively integrating the two to develop a synergistic ionization radiation simulation system based on continuous X-rays and pulsed lasers has significant research value and application prospects. Summary of the Invention

[0006] The present invention provides a collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers, which can solve the above problems.

[0007] In order to solve the above problems, the technical solutions adopted by the present invention are as follows:

[0008] The present invention provides a collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers, comprising:

[0009] A continuous X-ray source system for generating continuous X-rays with set intensity and energy spectrum to simulate the total dose effect;

[0010] A pulsed laser system for generating pulsed lasers with set parameters to simulate transient ionization effects;

[0011] A detection system for real-time detection of the steady-state and transient electrical responses of the semiconductor device under test to mixed irradiation in the radiation field;

[0012] a control test system for synchronously regulating the spatial position and time parameters of the continuous X-ray source system and the pulsed laser system, and collecting response data of the semiconductor device under test in the synergistic ionizing radiation field;

[0013] The continuous X-ray source system and the pulse laser system form a synergistic ionizing radiation field in the working area of ​​the semiconductor device to be tested through the coordination of spatial position and time sequence.

[0014] As a further description of the above technical solution: the continuous X-ray source system includes a microfocus X-ray tube, a cathode filament, an anode target material, a center coil, a focusing coil and a grid cap. The focus X-ray tube is used to generate X-rays, the cathode filament and the anode target material are used to use an electric field to accelerate electrons and transfer kinetic energy to atoms on the target, the center coil and the focusing coil are used to control the stable focusing of the electron beam, and the grid cap is used to control the direction of the electron beam and shape the electron beam.

[0015] As a further description of the above technical solution: the pulse laser system includes a pulse laser for generating pulse laser, a half-wave plate for adjusting the polarization state, a polarization beam splitter cube for splitting the pulse laser into two pulse laser beams in the horizontal direction and the vertical direction, a beam collector arranged directly above the polarization beam splitter cube and used to collect the vertical pulse laser, a combined attenuation lens module for controlling the horizontal beam intensity and adjusting the horizontal laser power, a 50:50 non-polarization beam splitter cube for splitting the attenuated pulse laser, an energy meter probe located directly above the 50:50 non-polarization beam splitter cube, a coupling lens for focusing and shaping the light beam, an objective lens for focusing, and a reflector for reflecting the light beam from the coupling lens to the objective lens; the light spot formed after the objective lens is focused acts on the working area of ​​the semiconductor device under test.

[0016] As a further description of the above technical solution: the detection system includes a photodetector and a semiconductor detection circuit board; the photodetector is used to detect light signals and convert the detected light signals into electrical signals; the semiconductor detection circuit board is used to install the semiconductor device to be tested.

[0017] As a further description of the above technical solution: the control test system includes a DC regulated power supply, a computer, and an oscilloscope connected to the computer; wherein the computer is also connected to the combined attenuation lens module to regulate the laser energy, and the oscilloscope is electrically connected to the semiconductor detection circuit board.

[0018] As a further description of the above technical solution: the pulse laser system is placed in a light shield.

[0019] As a further description of the above technical solution: the position of the semiconductor detection circuit board is fine-tuned by an electric XYZ translation stage.

[0020] As a further description of the above technical solution: the continuous X-ray source system and the semiconductor detection circuit board are both installed in a lead protective shell.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] 1) Through the synergistic effect of a continuous X-ray source system and a pulsed laser system, the steady-state total dose effect and transient ionization effect in the radiation environment are simulated respectively. The continuous X-ray source provides highly stable and high-intensity radiation to simulate long-term cumulative effects, while the pulsed laser system simulates transient ionization effects through controllable high-energy pulsed laser. This dual-source synergy effectively reproduces the multiple ionization damage effects in complex radiation environments, solving the limitation of existing technologies that a single radiation source cannot fully simulate multiple radiation effects.

[0023] 2) The system achieves precise coordination of the spatial focus and temporal triggering of continuous X-rays and pulsed lasers by controlling the test system, ensuring the synergistic effect of the two types of radiation within the device's working area. The spatiotemporal synchronization method overcomes the existing problem of the inability to precisely control the temporal and spatial registration of multi-source radiation, providing technical support for the quantitative analysis of synergistic effects.

[0024] 3) The detection system in the present invention uses photodetectors to realize real-time detection of steady-state and transient response signals in the mixed radiation field, and converts the signals into electrical signals for further processing. Compared with the inefficient methods of single signal detection or manual measurement in the prior art, the present invention significantly improves the real-time performance and data acquisition accuracy of the radiation simulation system, which helps to more accurately analyze the ionization effect response characteristics of semiconductor devices.

[0025] 4) The system is designed with an electric XYZ translation stage for the semiconductor device under test, which can perform precise radiation testing on the semiconductor device under test at multiple angles and positions, meeting the needs of different experimental conditions. At the same time, by adding a lead protective shell to the outside of the X-ray source and detection system, the impact of radiation on the experimental environment and other system components is reduced, thereby improving the safety and reliability of the experiment.

[0026] 5) By controlling the test system's flexible regulation of laser power, X-ray intensity, and time parameters, the present invention can adapt to the radiation simulation needs of various scenarios, such as simulating radiation environments of different intensities and energies, and studying the dynamic response of devices in complex radiation fields. This high flexibility and wide adaptability fills the technical gap in the existing technology for customized radiation simulation for specific scenarios.

[0027] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, embodiments of the present invention are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 It is a structural schematic diagram of an embodiment of the present invention.

[0030] The names corresponding to the reference numerals are:

[0031] 1- Pulsed laser, 2- Half-wave plate, 3- Polarization beam splitter cube, 4- Beam dump, 5- Combined attenuation lens module, 6- 50:50 non-polarization beam splitter cube, 7- Energy meter probe, 8- Coupling lens, 9- Reflector, 10- Objective lens, 11- Light shield, 12- Bracket, 13- Base, 14- Grid cap, 15- Cathode filament, 16- Center coil, 17- Protective cover, 18- Focusing coil, 19- Anode target material, 20- Semiconductor device under test, 21- Motorized XYZ translation stage, 22- Lead protective shell, 23- High voltage power supply. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0033] Please refer to Figure 1 An embodiment of the present invention discloses an ionizing cooperative radiation simulation system based on continuous X-rays and pulsed lasers. The system includes four parts: a pulsed laser system, a detection system, a control and testing system, and a small continuous X-ray source system.

[0034] 1. Continuous X-ray system

[0035] The continuous X-ray source is used to generate continuous X-rays with set intensity and energy spectrum to simulate the total dose effect.

[0036] In this embodiment, the continuous X-ray source generates X-rays by a microfocus X-ray tube, ensuring that X-rays with required intensity and energy spectrum can be continuously output.

[0037] The entire ray source uses a high voltage power supply 23 to provide a voltage of 40kV-130kV to accelerate electrons, and provides a low voltage heating current of about 10μA-300μA to the electron gun.

[0038] The electron gun includes a base 13, a grid cap 14 and a cathode filament 15. The electron gun is connected to the cathode and emits electrons by heating the cathode filament 15. At this time, the grid cap 14 works together with the cathode and anode to accurately control the focus and direction of the electron beam.

[0039] Before reaching the anode target material 19, the electron beam must pass through the center coil 16 and the focusing coil 18. The current passing through the coil can be adjusted according to different powers to achieve the purpose of precise control and focusing of the electron beam. Combined with the smaller filament in the electron gun, the electron beam can be focused on a focal point less than 50μm when it hits the target.

[0040] Anode target material 19 is connected to the anode. In this embodiment, high-temperature-resistant tungsten is used, and is connected to a copper block or molybdenum rod with high thermal conductivity. After the electron beam strikes the metal target, a small portion of its kinetic energy (approximately 1%) is converted into X-rays, while the majority of the remaining kinetic energy (approximately 99%) is converted into heat. Electrons that have lost kinetic energy are absorbed by the metal target and flow toward the positive terminal of the power supply. X-rays are emitted from the beryllium-based X-ray irradiation window, illuminating the working area of ​​the semiconductor device 20 under test from above.

[0041] It should be noted that there is a protective cover 17 on the outside of the X-ray source, which is used to shield X-rays except those that can be emitted from the bottom exit window, and to provide heat dissipation to the outside and electrical insulation; and the entire X-ray source part, the electric XYZ translation stage 21, and the semiconductor device under test 20 placed on the electric XYZ translation stage 21 need to be covered in a lead protective shell 22 to prevent X-ray radiation from damaging the experimenter and the experimental environment. The lead protective shell 22 is supported by the bracket 12.

[0042] 2. Pulsed laser system

[0043] The pulsed laser system is used to generate pulsed laser with set parameters to simulate transient ionization effects.

[0044] The pulse laser system includes a pulse laser 1, a half-wave plate 2, a polarization beam splitter cube 3, a beam collector 4, a combined attenuation lens module 5, a 50:50 non-polarization beam splitter cube 6, an energy meter probe 7 and a coupling lens 8.

[0045] In this embodiment, pulse laser 1 utilizes a Nd:YAG Q-switched pulsed laser, a high-energy nanosecond pulsed laser that generates sufficiently intense pulsed laser light to simulate transient ionization effects. Nd:YAG Q-switched pulsed lasers can generate pulsed laser light at various wavelengths, typically 266nm, 355nm, 532nm, and 1064nm. At a wavelength of 1064nm, the pulse width is 8ns-10ns, while at other wavelengths, the pulse width is 7ns-10ns.

[0046] The half-wave plate 2 and polarization beam splitter cube 3 primarily reduce the effects of polarization crosstalk on the optical system, while the beam dump 4 absorbs stray light. The laser light reaches the combined attenuation lens module 5 and the 50:50 non-polarization beam splitter cube 6, where it absorbs or scatters some of the laser energy. The laser then reaches the energy meter probe 7 in a vertical direction. The laser is then focused by a coupling lens 8, two reflectors 9, and an objective lens 10 to form a light spot. In this system, the light spot diameter is approximately 8-10 mm. The beam illuminates the working area from below the semiconductor device under test. The entire pulsed laser system is housed in a light shield 11.

[0047] 3. Detection system

[0048] The detection system is used to detect in real time the steady-state and transient electrical responses of the semiconductor device 20 under test to the mixed irradiation in the radiation field. It is based on a photodetector to convert the optical signals emitted by the pulsed laser system and the continuous X-ray source system into electrical signals.

[0049] The photodetector detects the optical signal emitted by the pulsed laser system and converts it into an electrical signal, which can be further processed by the electronics system to optimize the simulation results. Furthermore, the semiconductor device under test (20) is placed on a semiconductor test circuit board and fine-tuned using a motorized XYZ stage (21). This stage is connected to an oscilloscope in the control test system via a cable to capture the transient electrical characteristics of the semiconductor device under test (20).

[0050] 4. Control test system

[0051] The control and testing system is used to synchronously control the spatial position and timing parameters of the continuous X-ray source system and the pulsed laser system. This allows the continuous X-ray source system and the pulsed laser system to coordinate their spatial position and timing to form a synergistic ionizing radiation field within the working area of ​​the semiconductor device under test. The control and testing system also collects response data of the semiconductor device under test 20 in the synergistic radiation field.

[0052] The control test system includes a computer, an oscilloscope, a DC regulated power supply and cables.

[0053] A DC regulated power supply is connected to the pulse laser system and the continuous X-ray system through cables, and timing synchronization is achieved through a signal generator or a synchronization controller, so that the laser emitted by the pulse laser system and the X-ray emitted by the continuous X-ray system simultaneously irradiate the semiconductor device 20 under test.

[0054] The cable is connected to the semiconductor detection circuit board under the semiconductor device 20 under test, collects and records the transient electrical response signal of the radiation ionization effect of the semiconductor device 20 under test, and reflects the transient electrical characteristics on the oscilloscope and the computer.

[0055] Through the above-mentioned design, the embodiment of the present invention enables the application of laser simulation technology in mixed radiation scenarios. The pulsed laser is incident from the bottom of the device, and the X-ray is incident from the top of the device. The two light spots are concentrated in the working area of ​​the device, so that the device is simultaneously subjected to steady-state and transient ionizing irradiation effects. This is conducive to the in-depth study of the ionization process. From the perspective of ionization channel expansion, X-rays first ionize some atoms in the target material to form ionization channels. Subsequently, the pulsed laser further ionizes along these ionization channels, resulting in the expansion of the ionization channel and the deepening of the ionization degree. From the perspective of multi-photon ionization, when X-rays and pulsed lasers act simultaneously, they jointly contribute photons and promote the occurrence of multi-photon ionization. In addition, the potential difference between the anode metal target and the cathode electron gun, that is, the tube voltage, can be adjusted according to needs, thereby changing the energy of the X-rays; different powers can also determine different focus sizes; similarly, the laser wavelength and energy can also be adjusted according to actual needs.

[0056] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A collaborative ionizing radiation simulation system based on continuous X-rays and pulsed lasers, characterized in that: include: A continuous X-ray source system, for generating continuous X-rays with a set intensity and energy spectrum to simulate a total dose effect, comprising a microfocus X-ray tube, a cathode filament, an anode target material, a center coil, a focusing coil, and a grid cap. The microfocus X-ray tube is used to generate X-rays, the cathode filament and the anode target material are used to accelerate electrons using an electric field and transfer kinetic energy to atoms on the target, the center coil and the focusing coil are used to control the stable focusing of the electron beam, and the grid cap is used to control the direction of the electron beam and shape the electron beam. A pulsed laser system for generating pulsed laser light with set parameters to simulate a transient ionization effect, comprising a pulsed laser for generating the pulsed laser light, a half-wave plate for adjusting the polarization state, a polarization beam splitter cube for splitting the pulsed laser light into two pulsed laser light beams in the horizontal and vertical directions, a beam collector disposed directly above the polarization beam splitter cube for collecting the vertical pulsed laser light, a combined attenuation lens module for controlling the horizontal beam intensity and adjusting the horizontal laser power, a 50:50 non-polarization beam splitter cube for splitting the attenuated pulsed laser light, an energy meter probe located directly above the 50:50 non-polarization beam splitter cube, a coupling lens for focusing and shaping the light beam, an objective lens for focusing, and a reflector for reflecting the light beam from the coupling lens to the objective lens; a light spot formed after focusing by the objective lens acts on a working area of ​​the semiconductor device under test; A detection system for real-time detection of the steady-state and transient electrical responses of the semiconductor device under test to mixed irradiation in the radiation field; a control test system for synchronously regulating the spatial position and time parameters of the continuous X-ray source system and the pulsed laser system, and collecting response data of the semiconductor device under test in the synergistic ionizing radiation field; The continuous X-ray source system and the pulse laser system form a synergistic ionizing radiation field in the working area of ​​the semiconductor device to be tested through the coordination of spatial position and time sequence.

2. The collaborative ionizing radiation simulation system according to claim 1, characterized in that: The detection system includes a photodetector and a semiconductor detection circuit board; the photodetector is used to detect light signals and convert the detected light signals into electrical signals; the semiconductor detection circuit board is used to install the semiconductor device to be tested.

3. The collaborative ionizing radiation simulation system according to claim 2, characterized in that: The control and testing system includes a DC regulated power supply, a computer, and an oscilloscope connected to the computer; wherein the computer is also connected to the combined attenuation lens module to regulate laser energy, and the oscilloscope is electrically connected to the semiconductor detection circuit board.

4. The collaborative ionizing radiation simulation system according to claim 3, characterized in that: The pulse laser system is placed in a light shield.

5. The collaborative ionizing radiation simulation system according to claim 3, characterized in that: The position of the semiconductor detection circuit board is finely adjusted by an electric XYZ translation stage.

6. The collaborative ionizing radiation simulation system according to claim 3, characterized in that: The continuous X-ray source system and the semiconductor detection circuit board are both installed in a lead protective shell.

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