An apparatus and method for in-situ non-destructive testing of defects in antimony compounds semiconductors

Abstract

The application discloses a kind of antimonide semiconductor defect in-situ nondestructive testing device and method, device includes: light source component is used to emit scanning light beam and adjusts the emission position of scanning light beam;Objective focusing component is used to receive, transmit and focus scanning light beam normal incidence to sample, also be used to transmit the reflected light beam of scanning light beam by sample;Dichroic mirror is located between light source component and objective focusing component, for passing through scanning light beam also for reflecting the reflected light beam;Imaging component, for receiving reflected light beam and imaging sample based on third harmonic signal in reflected light beam, imaging component can form the two-dimensional image of sample along with light source component adjustment scanning light beam emission position is different, and can form the three-dimensional image of sample in conjunction with objective focusing component adjustment focusing depth of scanning light beam. Can be in-situ nondestructive testing to sample.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to an in-situ nondestructive detection device and method for antimonide semiconductor defects. Background Art

[0002] With the rapid development of the semiconductor field, fourth-generation semiconductors have become the technological high ground with their advantages of wide application and low cost. Among them, antimonide is the representative of ultra-narrow bandgap semiconductor materials, which have high mobility and easy excitation characteristics, providing support for high-performance optoelectronic devices. At present, antimonide semiconductors such as gallium antimonide and indium antimonide are mostly prepared by processes such as direct pulling and epitaxial growth. During the process, internal defects such as lattice mismatch, vacancies and dislocations caused by stress are easily generated. For example, when preparing InSb, the raw material ratio and the amount of element introduced must be strictly controlled, and problems such as element inclusion and dislocation are very likely to occur, affecting the material performance and device operation stability. In the growth of antimonide semiconductors, micro defects extend along a specific direction and are on the order of hundreds of nanometers to microns. Therefore, the detection method needs to have three-dimensional imaging capabilities and high spatial resolution.

[0003] Conventional semiconductor micro-defect detection methods include scattered light detection, electron microscopy, and ultrasonic testing. Scattered light detection can only detect large surface defects and, limited by the Rayleigh criterion, is ineffective against materials with strong UV absorption. Electron microscopy has high sample requirements and requires sample preparation, resulting in a small imaging field of view and high costs, making it incapable of rapid non-destructive testing. Ultrasonic testing requires a coupling medium and, due to edge effects, produces unclear images of defect edges. Summary of the Invention

[0004] The present invention provides an in-situ nondestructive detection device and method for antimonide semiconductor defects, which has high detection image resolution, clear imaging, and precise detection positioning, thereby realizing nondestructive detection of internal defects of antimonide semiconductors.

[0005] According to one aspect of the present invention, there is provided an in-situ nondestructive detection device for antimonide semiconductor defects, comprising:

[0006] A light source assembly, configured to emit a scanning light beam and adjust the emission position of the scanning light beam; wherein the optical parameters of the scanning light beam satisfy the following conditions: when irradiated onto a sample, a third harmonic signal can be generated in a defect-free portion of the sample;

[0007] an objective lens focusing assembly, configured to receive, transmit and focus the scanning light beam incident on the sample, and also configured to transmit a light beam reflected by the sample from the scanning light beam;

[0008] a dichroic mirror, located between the light source assembly and the objective lens focusing assembly, for transmitting the scanning light beam and also for reflecting the reflected light beam;

[0009] An imaging component is used to receive the reflected light beam and image the sample based on the third harmonic signal in the reflected light beam. The imaging component can form a two-dimensional image of the sample as the light source component adjusts the emission position of the scanning light beam, and can form a three-dimensional image of the sample by adjusting the focal depth of the scanning light beam in combination with the objective lens focusing component.

[0010] According to another aspect of the present invention, a method for in-situ nondestructive detection of antimonide semiconductor defects is provided, wherein the method is performed based on the antimonide semiconductor defect detection device according to any embodiment of the present invention, and the method comprises:

[0011] Adjusting any area of ​​the sample to be located in the detection field of view;

[0012] Control the focus of the scanning beam to be located at any depth, and the plane coordinates are located at the sample in sequence Location to Position, forming a two-dimensional image of any area;

[0013] Adjust the position of the focus of the scanning beam in the depth direction, repeatedly control the focus of the scanning beam to be at any depth, and the plane coordinates are successively located at the depth of the sample. Location to position, forming a two-dimensional image of any area, forming a three-dimensional image of any area; wherein i is a positive integer;

[0014] Repeating the above steps in sequence to form three-dimensional images of multiple regions of the sample, and splicing the multiple three-dimensional images to form a three-dimensional image of the sample;

[0015] The defect distribution of the sample is obtained based on the distribution of light and dark pixels in the three-dimensional image.

[0016] The device for in-situ nondestructive detection of antimony compound semiconductor defects and the method according to the embodiments of the present application are as follows: the device comprises a light source assembly for emitting a scanning light beam and adjusting the emission position of the scanning light beam; an objective lens focusing assembly for receiving, transmitting and focusing the scanning light beam to be normally incident to a sample, and for transmitting a reflected light beam of the sample to the scanning light beam; a dichroic mirror between the light source assembly and the objective lens focusing assembly for transmitting the scanning light beam and reflecting the reflected light beam; and an imaging assembly for receiving the reflected light beam and imaging the sample based on the third harmonic signal in the reflected light beam; the imaging assembly can form a two-dimensional image of the sample by adjusting the emission position of the scanning light beam by the light source assembly, and can form a three-dimensional image of the sample by adjusting the focusing depth of the scanning light beam by the objective lens focusing assembly. Thus, by cooperation of the light source assembly and the objective lens focusing assembly, the sample can be detected in-situ, avoiding errors caused by displacement of the sample. In addition, the sample is imaged by the third harmonic signal generated by the sample, the imaging is clear, the resolution is high, and no other effects are generated on the semiconductor.

[0017] It should be understood that the content described in this part is not intended to identify key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0019] Figure 1 is a structural schematic diagram of the device for in-situ nondestructive detection of antimony compound semiconductor defects provided by the embodiments of the present application;

[0020] Figure 2 is a structural schematic diagram of the device for in-situ nondestructive detection of antimony compound semiconductor defects provided by an embodiment of the present application;

[0021] Figure 3 is a flow chart of the method for in-situ nondestructive detection of antimony compound semiconductor defects provided by an embodiment of the present application;

[0022] Figure 4 is a spectrum diagram of the third harmonic signal of the femtosecond laser and indium antimony (InSb) in an embodiment of the present application;

[0023] Figure 5 is a two-dimensional scanning result of defects of an InSb wafer based on the third harmonic effect in an embodiment of the present application;

[0024] Figure 6 This is a three-dimensional scanning result of defects in a local InSb wafer based on the third harmonic effect in one embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0026] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0027] With the rapid rise and development of the semiconductor field, semiconductor materials have been widely used in communications, photovoltaics, aerospace, lighting, lasers, detectors, and electronic devices, making the semiconductor field a crucial battleground in today's technology. Against this backdrop, fourth-generation semiconductors are gradually gaining attention due to their broad applicability, large-scale manufacturing, and lower production costs. They are used in lasers, solar cells, photodetectors, and other fields, becoming a key area of ​​emerging technology. Fourth-generation semiconductors include ultra-narrow bandgap (UNBG) semiconductor materials, primarily antimonides (such as indium antimonide (InSb) and gallium antimonide (GaSb). These materials possess high mobility and are easily excited, providing strong support for high-performance lasers, detectors, and other devices.

[0028] Currently, fourth-generation semiconductors, represented by antimonides, such as gallium antimonide (GaSb), indium antimonide (InSb), and multi-component antimonide superlattice materials, are mostly produced using methods such as the Czochralski method, epitaxial growth, and bulk material growth. During the production process, these methods are prone to introducing internal defects such as vacancies, substitutional impurities, dislocations, stacking faults, and oxygen precipitation caused by lattice mismatch and stress. For example, the InSb preparation process requires precise control of the reaction environment, the molar ratio of In and Sb in the raw materials, and the amount of other elements such as tellurium (Te). This makes it very easy to produce tiny defects such as element inclusions, voids, and dislocations during the preparation process. These defects can lead to limited mechanical strength of the material, reduced quality of the finished product, and device failure, posing a safety hazard to the stable operation of subsequent optoelectronic systems and devices.

[0029] During the growth of these antimonide semiconductor materials, micro-defects such as dislocations grow along the epitaxial or tensile directions, requiring internal micro-defect detection methods to be capable of 3D imaging. Furthermore, the small size of deep-seated defects (on the order of hundreds of nanometers to micrometers) also requires high spatial resolution.

[0030] At present, the means used to detect micro-defects in conventional semiconductor materials such as silicon-based, gallium arsenide, silicon carbide, etc. mainly include scattered light detection, electron microscopy detection (electron beam detection), ultrasonic detection, etc.

[0031] Scattered light detection uses scattered light signals from laser scanning across the wafer surface to diagnose defects. It's generally used to detect larger surface defects, but it can't penetrate deep into the sample. Furthermore, due to the Rayleigh criterion, higher resolution requires the use of short-wavelength incident light. Consequently, the material under test must not strongly absorb ultraviolet light, resulting in a low signal-to-noise ratio and suboptimal imaging. Electron beams, as an imaging medium with exceptionally high resolution, can be used for semiconductor defect detection. For example, scanning electron microscopy (SEM) detects surface defects by detecting electrons scattered by the sample, while transmission electron microscopy (TEM) collects electrons transmitted through the sample to characterize its crystal structure, morphology, and internal stresses. However, electron microscopy has inherent drawbacks and limitations. These include strict requirements for sample dimensions, thickness, conductivity, surface condition, and testing environment. Pre-preparation is required, resulting in a small imaging field and long testing times. Furthermore, electron microscopes are expensive, making them inefficient for convenient and rapid non-destructive testing. Ultrasonic and acoustic nondestructive testing have also been used for semiconductor defect detection. Through the interaction of ultrasound waves with semiconductor devices, such as reflection, transmission, and scattering, they can detect macroscopic defects in semiconductor devices and characterize changes in geometric information, microstructure, and mechanical properties. However, ultrasonic testing methods are somewhat selective for samples because high-frequency sound waves attenuate rapidly in air, necessitating the placement of the wafer in a coupling medium. Furthermore, due to edge effects, ultrasound waves can scatter or refract at the edges of material defects, resulting in unclear ultrasonic images.

[0032] While some imaging methods offer high resolution, they face technical bottlenecks such as difficulty in 3D imaging, inability to track the growth of microdefects in real time, destructiveness, potential damage to samples, complex pretreatment processes, limited detection depth, and high costs. Furthermore, there are currently no literature or patent reports on nondestructive testing solutions and devices for internal defects in fourth-generation semiconductors, such as antimonides. Therefore, developing new high-resolution, nondestructive, and precise 3D characterization methods to detect key defect characteristics such as morphology and location within these semiconductor materials is of great significance.

[0033] The following describes an in-situ nondestructive detection device and method for antimonide semiconductor defects according to an embodiment of the present invention with reference to the accompanying drawings.

[0034] Figure 1 FIG. 1 is a schematic structural diagram of an in-situ nondestructive detection device for antimonide semiconductor defects provided by an embodiment of the present invention. Figure 1 As shown, the detection device includes: a light source component 101, a dichroic mirror 102, an objective lens focusing component 103 and an imaging component 104.

[0035] Among them, the light source component 101 is used to emit a scanning light beam and adjust the emission position of the scanning light beam; wherein, the optical parameters of the scanning light beam satisfy: when irradiated to the sample 200, it can enable the defect-free part of the sample 200 to generate a third harmonic signal; the objective lens focusing component 103 is used to receive, transmit and focus the scanning light beam that is incident on the sample 200, and is also used to transmit the reflected light beam of the scanning light beam by the sample 200; the dichroic mirror 102 is located between the light source component 101 and the objective lens focusing component 103, and is used to pass the scanning light beam and also to reflect the reflected light beam; the imaging component 104 is used to receive the reflected light beam and image the sample 200 based on the third harmonic signal in the reflected light beam. The imaging component 104 can form a two-dimensional image of the sample 200 as the light source component 101 adjusts the emission position of the scanning light beam, and can form a three-dimensional image of the sample 200 in combination with the objective lens focusing component 103 to adjust the focal depth of the scanning light beam.

[0036] It can be understood that the principle of non-destructive detection of defects in antimonide semiconductor materials according to the embodiment of the present invention is as follows: for antimonide semiconductor materials, by precisely focusing the ultrafast laser to different depths inside the material, and utilizing the characteristic that the energy density is extremely high and extremely small in the area after focusing, it is possible to fully excite the high-order harmonic effect at the location of the high-intensity focal point of the ultrafast laser in the antimonide. At this time, the energy density of the ultrafast laser needs to be controlled to be lower than the damage energy density threshold of the antimonide sample to be tested. Due to changes in the lattice structure of the material such as sphalerite or argentite, the high-order harmonic effect cannot be effectively excited at the internal fine defects. After being processed by the filter, no signal reaches the detector, and dark area imaging is presented at the defect, forming a light-dark contrast difference with the normal area, thus achieving defect detection. Among them, the generation of high-order harmonic effect is a unique property of antimonide semiconductor materials, and this property can be used to detect defects therein.

[0037] It should be noted that the light source parameters of the light source assembly 101 in this embodiment of the present invention can be modified according to the properties of the semiconductor being measured, ensuring efficient excitation of high-order harmonics while also matching the corresponding imaging assembly 104. Its central wavelength can cover the ultraviolet, visible, near-infrared, and mid- and far-infrared bands (190nm-25000nm). Laser pulse lengths can be adjusted within the femtosecond and picosecond ranges (30fs-1000ps). Laser power can range from 30mW to 10000mW, with repetition rates spanning 1kHz-100MHz.

[0038] In one embodiment, Figure 2As shown, the light source assembly 101 includes a light source 1011 emitting laser light, a focusing lens 1012, a collimating lens 1013, a beam scanning deflection system 1014, and a light field regulation system 1015. The light emitted by the laser light source 1011 can excite high harmonics of the sample 200. After being focused by the focusing lens 1012 and collimated by the collimating lens 1013, the light reaches the beam scanning deflection system 1014. The beam scanning deflection system 1014 can be a galvanometer or an electrically driven rotating mirror, which can change the spatial propagation direction of the light beam. The light field regulation system 1015 can focus the light beam deflected by the beam scanning deflection system 1014 to the surface of the sample 200 together with the objective focusing assembly 103.

[0039] The dichroic mirror 102 is used to separate the incident light and the high harmonic light. In the system, the dichroic mirror is a long-wave dichroic mirror, which can transmit light beams with a wavelength higher than the starting wavelength and reflect light beams with a wavelength lower than the starting wavelength. The average transmittance of the base frequency light in the required wavelength band is greater than 90%, and the average reflectivity of the high harmonic is greater than 95%. The starting wavelength can be adapted to different incident wavelength and high harmonic wavelength requirements, so that the incident base frequency light is transmitted, the high harmonic light is reflected, and the starting wavelength covers the ultraviolet, visible, near-infrared to mid-infrared wavelength band (190-25000 nm).

[0040] Figure 2 is a structural schematic diagram of an antimonide semiconductor defect in-situ nondestructive detection device provided by an embodiment of the present application, as shown in Figure 2 As shown, the objective lens 1031 in the objective focusing assembly 103 has a magnification of 10-40x, a numerical aperture NA of 0.25-0.95, and a working wavelength band of 190-25000 nm. The focusing part 1032 has a stroke range of 1000 μm and a closed-loop resolution of 10-50 nm.

[0041] The imaging assembly 104 is used to detect the high harmonic signal generated by the antimonide sample. In the embodiment, a photomultiplier tube (such as the harmonic detection system 1043 in Figure 2 , which is a photomultiplier tube) is used. The response wavelength band is 60-25000 nm.

[0042] The sample 200 is a fourth-generation semiconductor represented by antimonide, including but not limited to indium antimonide (InSb), gallium antimonide (GaSb), and related superlattice materials (binary and ternary superlattices, etc.). In the embodiment of the present application, indium antimonide (InSb) is taken as an example for description.

[0043] The light emitted by the light source assembly 101 can pass through the dichroic mirror 102 and the objective lens focusing assembly 103 and be incident normally on the sample 200, so that the high-order harmonic signals generated by the sample 200 can be completely returned to the dichroic mirror 102 and reflected by the dichroic mirror 102, so as to be successfully captured by the imaging assembly 104. In this way, it is possible to avoid the situation where some of the high-order harmonic signals generated when the light emitted by the light source assembly 101 is incident at an oblique angle cannot be reflected from the sample 200 (for example, the harmonic signals are totally reflected within the sample 200) or are reflected from the sample 200 but cannot be captured by the imaging assembly 104 (for example, the direction of the harmonic signals is not fixed, and the acquisition window of the imaging assembly 104 cannot fully cover the direction of the harmonic signals, etc.).

[0044] In addition, the light source assembly 101 adjusts / scans the direction of the light irradiated onto the sample 200. Furthermore, by adjusting the direction of the light, the surface of the sample 200 can be scanned, and the imaging assembly 104 can obtain a two-dimensional image of the sample 200. Furthermore, the objective lens focusing assembly 103 adjusts the focal position of the light in the depth direction of the sample 200, and then superimposes the adjustment / scanning of the direction of the light irradiated onto the sample 200 by the light source assembly 101. Thus, the imaging assembly 104 can obtain various surface images in the depth direction of the sample 200. These various surface images in the depth direction of the sample 200 are fused together to ultimately obtain a three-dimensional image of the sample 200. In the three-dimensional image, normal structures of the sample 200 will generate a third harmonic signal, appearing bright in the image, while abnormal defective structures will not generate a third harmonic signal and will appear dark in the image. Consequently, by displaying the bright and dark pixels in the three-dimensional image, the defects of the sample 200 can be clearly identified.

[0045] Thus, the light source assembly 101 and the objective lens focusing assembly 103 cooperate to achieve in-situ, non-destructive, online, contactless, and high-precision three-dimensional inspection of the sample. Within the area covered by the beam movement, there is no need to move the sample 200 itself. This device enables in-situ inspection with nanometer-level resolution. Specifically, by varying the depth of the focused light spot (axial scanning) in conjunction with surface scanning (transverse slice scanning), three-dimensional, non-destructive inspection of internal defects in antimonides can be achieved, identifying key information such as the morphology and location of the corresponding defects. This device abandons the traditional scanning method of displacing the sample, significantly improving scanning efficiency while avoiding measurement errors caused by displacement of the sample 200.

[0046] Alternatively, as Figure 2 As shown, the device further includes: a temperature control component 105 for maintaining the ambient temperature of the sample so as to stabilize the third harmonic signal generated by the sample 200 .

[0047] Among them, the temperature control component 105 can control the temperature of the environment in which the sample 200 is located, and the control range is -100~1500℃. It can not only control the test temperature at a constant temperature (such as room temperature 25±0.2℃), avoiding the center frequency offset and measurement error of high-order harmonics caused by temperature effects, but also provide controllable experimental conditions for studying temperature-dependent semiconductor defect behavior.

[0048] It is understandable that some samples 200 can generate different third harmonic signals at different ambient temperatures, that is, they are dependent on the ambient temperature. For example, at some temperatures, the defects of sample 200 will recover on their own, while at some temperatures, the normal structure of sample 200 may be abnormal. Some samples 200 are not dependent on the ambient temperature, but the high-order harmonic signals they generate may also drift due to temperature effects. In order to stably measure the sample 200 at a certain temperature, prevent the third harmonic signal from drifting and measurement errors, and then place the sample 200 in a constant temperature environment through the temperature control component 105. In this way, during the scanning and imaging process, if the ambient temperature changes, it will not affect the scanning detection of the sample 200, thereby improving the detection accuracy.

[0049] Optionally, continue to refer to Figure 2 The device also includes: a temperature control component 105 for adjusting the ambient temperature of the sample 200 so that the imaging component 104 can perform real-time online monitoring of temperature-sensitive defects of the sample 200 based on the three-dimensional image.

[0050] As mentioned above, some samples 200 generate different third harmonic signals at different ambient temperatures, indicating a dependency on ambient temperature. When inspecting such samples 200 for defects, different temperatures can be adjusted. This means that the samples 200 are exposed to different temperatures. Using the imaging component 104 to capture three-dimensional images of the samples 200 at different temperatures, it is possible to analyze the temperature at which the defect rate of the samples 200 is lowest, thereby providing guidance for subsequent processing. For example, when packaging the samples later, this ambient temperature can be selected to increase product yield.

[0051] Optionally, continue to refer to Figure 2 The device also includes: a bright field detection component 106 and a beam splitter 107; the bright field detection component 106 is used to emit an illumination beam to the sample 200, and perform bright field imaging of the sample 200 based on the reflection beam of the illumination beam by the sample 200, so as to feedback and adjust the field of view to be detected of the sample 200; wherein the beam splitter 107 is located between the dichroic mirror 102 and the imaging component 104.

[0052] It should be noted that the brightfield detection assembly 106 includes an illumination light source 1062, a brightfield detection device 1061, a beam splitting unit 1064, and a collimating and focusing lens group 1063. The illumination light source 1062 emits an illumination beam, which is reflected by the beam splitting unit 1064 to the collimating and focusing lens group 1063 for collimation. The beam splitter 107 reflects the illumination light beam to the dichroic mirror 102, and then reflects the illumination light beam to the objective lens focusing assembly 103 to reach the surface to be measured of the sample 200. The illumination light beam is reflected by the surface to be measured of the sample 200 to form a reflected light beam. The reflected light beam then passes through the objective lens focusing assembly 103, is reflected by the dichroic mirror 102, is reflected by the beam splitter 107, is focused by the collimating and focusing lens group 1063, and is transmitted by the beam splitting unit 1064 to reach the brightfield detection device 1061. Therefore, by setting the bright field detection component 106, the field of view to be detected of the sample 200 can be acquired in real time, so that it can be determined whether the field of view to be detected of the sample 200 is in the target detection field of view.

[0053] It is understandable that when the surface area of ​​the sample 200 to be measured is relatively large, the light source assembly 101 cannot scan all of the sample 200 to be measured by adjusting the light beam scanning. Therefore, a workpiece stage 300 can be set up, the sample 200 is placed on the workpiece stage 300, and a certain field of view of the sample 200 to be detected is moved to the range that the light source assembly 101 can scan by moving the workpiece stage 300. In one embodiment, a grid can be formed on the sample 200 in advance (the size of the grid is a field of view to be detected), and then the focus of the light source assembly 101 is placed at the center of the grid. Then, the bright field detection assembly 106 is used to confirm whether the focus of the light source assembly 101 is at the center of the grid to determine whether the field of view of the sample 200 to be detected is in the corresponding position. If it is not in the corresponding position, the workpiece stage 300 can be moved.

[0054] When the surface area of ​​the sample 200 to be measured is relatively small, that is, it can be covered by one field of view to be detected, the imaging of the illumination detection component 106 can be used to observe whether the sample 200 is in the field of view to be detected. If it is not in the field of view to be detected, the workpiece stage 300 can be moved.

[0055] Among them, the above-mentioned beam splitting unit 1064 can be a semi-transparent and semi-reflective mirror. The beam splitter 107 can reflect the illumination light beam, and the reflected light beam of the laser beam of the light source component 101 is transmitted to the imaging component 104. The workpiece stage 300 is a three-dimensional displacement stage. The vertical travel range of the workpiece stage 300 is 75mm, the accuracy is 1μm, and the lateral travel range is 100mm, and the accuracy is 0.5μm. The bright field detection device 1061 uses an industrial camera with a working band of 190-25000nm and an exposure time of 3μs-10s. The illumination light source 1062 can be a white light source or a monochromatic LED light source with a band of 380-780nm and an output power of 338-2499mW.

[0056] In this way, the detection device realizes the coaxial integrated design of laser and bright field detection optical paths, which not only simplifies the rapid positioning process of the area to be tested, but also supports dual-modal synchronous detection, significantly reducing the difficulty of optical path alignment after sample switching, while improving the overall stability and detection efficiency of the system.

[0057] Optionally, continue to refer to Figure 2 The device also includes: a semiconductor manufacturing component 108 for processing the sample 200, wherein the imaging component 104 is used to obtain a two-dimensional image and / or a three-dimensional image of the defect while the semiconductor manufacturing component 108 is processing the sample 200.

[0058] Among them, the semiconductor manufacturing component 108 can integrate micro-nano processing, packaging and detection technologies to realize the integrated manufacturing of real-time preparation, precision packaging and detection of semiconductor devices. The modular design supports rapid replacement of process chambers to meet diverse preparation needs.

[0059] It is understood that, since the imaging component 104 maintains the sample 200 in its original position during the imaging process, if the imaging component 104 images the sample 200 and the imaging result is normal, the semiconductor manufacturing component 108 can directly process the sample through other processes. Alternatively, if the surface area of ​​the sample 200 to be measured is larger than the entire field of view to be detected, the processing can be performed on other areas with normal imaging results, and the sample 200 can ultimately be cut accordingly. This can improve the processing efficiency of the sample 200.

[0060] Optionally, continue to refer to Figure 2 The imaging component 104 includes a filter unit 1042 and an imaging unit. The filter unit 1042 is used to transmit the third harmonic signal, and the imaging unit is used to perform imaging based on the third harmonic signal.

[0061] The imaging unit includes a harmonic detection system 1043 and a processor 1044, and the imaging assembly 104 also includes a focusing lens group 1041. It should be noted that after the dichroic mirror 102 reflects the light beam reflected from the sample 200 by the light source assembly 101, if the device includes an illumination detection assembly 106, the light beam will sequentially pass through the beam splitter 107, the focusing lens group 1041, and the filter unit 1042 to reach the harmonic detection system 1043. The processor 1044 then analyzes the image generated by the third harmonic signal to obtain the defect rate. If the device does not include the illumination detection assembly 106, the light beam reflected by the dichroic mirror 102 will sequentially pass through the focusing lens group 1041 and the filter unit 1042 to reach the harmonic detection system 1043.

[0062] The above-mentioned filter unit 1042 can be a filter, and its transmission characteristics can be changed according to the properties of the sample 200 and the light source 1011 used, so as to meet the requirements of the transmission center wavelength and the above-mentioned high-order harmonic frequency. Matching can start from ultraviolet light, include visible light, near infrared, and even mid-infrared, with a transmittance between 37% and 99%, so as to filter out other stray light and only transmit harmonic signals, thereby improving the quality of imaging images.

[0063] Optionally, continue to refer to Figure 2 The objective lens focusing assembly 103 includes an objective lens unit and a piezoelectric displacement adjustment unit. The piezoelectric displacement adjustment unit is fixedly connected to the objective lens unit and is used to adjust the displacement of the objective lens unit in the axial direction of the scanning light beam.

[0064] The objective lens unit is the objective lens 1031, and the piezoelectric displacement adjustment unit is the focusing unit 1032. The focusing unit 1032 is a piezoelectric objective lens positioner. When different voltages are applied to the focusing unit 1032, it will deform, thereby causing the objective lens 1031 to move in the axial direction.

[0065] For example, when a first electrical signal is applied to the piezoelectric objective lens positioner, it can be deformed and lengthened in the axial direction, thereby causing the objective lens 1031 to move closer to the sample 200. When a second electrical signal is applied to the piezoelectric objective lens positioner, it can be deformed and shortened in the axial direction, thereby causing the objective lens 1031 to move away from the sample 200. In this way, the distance between the objective lens 1031 and the sample 200 can be changed, thereby adjusting the focus of the light beam emitted by the light source assembly 101. This allows the light source assembly 101 to scan different depths of the surface of the sample 200.

[0066] Optionally, the intensity of the scanning beam The third harmonic light intensity generated by the sample Satisfy between:

[0067] ;

[0068] in, , is the third harmonic refractive index in the medium, is the center frequency of the non-fundamental frequency light generated by antimonide under the excitation of fundamental frequency light, m ​​is the nonlinear polarization order, c is the speed of light, , , k is the wave vector, L is the distance that light propagates in antimonide, is the third-order nonlinear susceptibility.

[0069] Specifically, the intensity of the scanning beam When the sample 200 is able to generate a third harmonic signal, the relationship between the two can be derived to facilitate corresponding calculations during subsequent image processing.

[0070] Among them, the process of generating high-order harmonics inside antimonide semiconductors can be described as follows: Antimonide usually has a sphalerite or argentite structure. When the center frequency is When an ultrashort laser pulse is incident on an antimonide semiconductor material, the nuclei and electrons in the medium undergo relative displacement to generate electric dipoles or the polar molecules therein undergo orientation polarization, inducing a secondary electric field, which can be measured by the polarization intensity. Description. Since the incident light is an ultrashort laser pulse, the average electric field inside the atom is comparable to the light field intensity, and the electric polarization intensity is no longer proportional to the incident light field. This is specifically manifested in the appearance of a nonlinear term in the polarizability of antimonide, and the polarization intensity of the antimonide material is Can be expanded into an excitation light field The power series of , that is:

[0071] ;

[0072] in is the linear polarizability, , , are the second, third and m-order nonlinear susceptibilities, is the center frequency of the non-fundamental frequency light generated by antimonide under the excitation of fundamental frequency light. For the mth harmonic generated by antimonide, its center wavelength is With the fundamental light frequency The following relationship is satisfied: .

[0073] High-order harmonic light intensity and high-order harmonic electric field strength The relationship can be expressed as: ;

[0074] in is the absolute dielectric constant, c is the speed of light, is the refractive index of the antimonide to be measured.

[0075] Under the small signal approximation, the third harmonic light intensity generated by antimonide is The intensity of the fundamental frequency light, that is, the intensity of the scanning beam The relationship can be expressed as: ;

[0076] in, , is the third harmonic refractive index in the medium, , the third harmonic signal frequency , k is the wave vector, L is the distance that light propagates in antimonide, is the third-order nonlinear susceptibility.

[0077] Therefore, it is possible to clearly determine the intensity of the third harmonic light generated by the antimonide. The intensity of the fundamental frequency light, that is, the intensity of the scanning beam According to the relationship between the two, high-order harmonics can be generated for the defect-free part of the antimonide, but no high-order harmonics can be generated for the defective part. Therefore, this principle can be used to detect whether there are defects in the antimonide.

[0078] The device uses beam pointing modulation technology to achieve rapid two-dimensional scanning of the area to be measured. By controlling the focus position of the femtosecond laser beam on the sample surface and adjusting the objective lens position to change the focus depth in conjunction with a high-precision beam depth of focus modulation system, it achieves non-contact detection of the sample's three-dimensional area. This design abandons traditional sample displacement scanning methods, significantly improving scanning efficiency while avoiding measurement errors caused by sample displacement. It enables high-resolution in-situ detection of samples and can work in conjunction with semiconductor manufacturing modules to achieve integrated real-time preparation, precision packaging, and testing of semiconductor devices. For large-scale sample detection, the system uses a three-dimensional translation stage for coarse sample positioning and combines scan area stitching technology to achieve full sample coverage measurement. Secondly, the device integrates a precision temperature control device that can control the temperature between -100 and 1500°C. This not only stabilizes the test environment at a constant temperature and effectively suppresses high-order harmonic center frequency drift caused by temperature fluctuations, but also allows for wide temperature variations, providing controllable experimental conditions for studying temperature-dependent semiconductor defect behavior. Finally, the device innovatively realizes the coaxial integrated design of laser and bright field detection optical paths, which not only simplifies the rapid positioning process of the area to be tested, but also supports dual-modal synchronous detection, significantly reducing the difficulty of optical path alignment after sample switching, while improving the overall stability and detection efficiency of the system.

[0079] Based on the same inventive concept, according to another aspect of the present invention, a method for in-situ nondestructive detection of antimonide semiconductor defects is provided, wherein the antimonide semiconductor defect detection device according to any embodiment of the present invention is used for detection, such as Figure 3 As shown, the method includes:

[0080] S1, adjust any area of ​​the sample to be in the detection field of view.

[0081] Focus the laser on the surface of the semiconductor sample to be tested, control the three-dimensional translation stage to adjust the focus position laterally, and select the local area A to be tested.

[0082] The sample is placed on a 3D translation stage. Laser light processed by the light field control system is focused on the sample surface to be measured, generating third harmonics. By controlling the lateral displacement of the 3D translation stage, the laser focus position on the sample in the x and y directions is changed. Lateral adjustments are performed to select a local area A to be measured, centered on this focus point.

[0083] S2, controls the focus of the scanning beam to be at any depth, and the plane coordinates are located at the sample Location to position, forming a two-dimensional image of any area.

[0084] For example, by controlling the beam deflection system, a two-dimensional scan of the local area A to be measured is achieved, and each point Normalized grayscale value of the third harmonic signal intensity And store, where x, y, z represent the three-dimensional position information of the point, and i represents the sequence number of each point scanned in the local area.

[0085] When the laser is focused on a certain point on the sample, the program sets the basic parameters such as the scanning range, scanning step, and number of pixels to control the beam deflection system to achieve a two-dimensional scan of the local area A to be measured. The position information of each point is recorded as , respectively describing the three-dimensional position information of the point, and recording the local area A and serial number i to which each point belongs; the third harmonic signal intensity of each point is converted into a voltage signal by the detection system, which is converted into a grayscale value after normalization and stored.

[0086] S3, adjust the position of the focus of the scanning beam in the depth direction, repeatedly control the focus of the scanning beam to be at any depth, and the plane coordinates are located at the sample in sequence. Location to Position, the step of forming a two-dimensional image of any area, forming a three-dimensional image of any area; wherein i is a positive integer.

[0087] After completing a 2D scan of area A, the objective lens focusing assembly adjusts the laser's focal depth on the sample, allowing for a 3D slice scan of the sample. After adjusting the focal depth, the displacement system moves the sample laterally, reselecting the local areas B, C, ... to be measured. Steps S2 and S3 are repeated to complete a 2D scan of the sample at that focal depth, ultimately yielding 3D sample information.

[0088] In this embodiment, after completing the 2D scan of local area A in step S2, S3 can be performed, that is, completing the 3D scan of local area A first, and then selecting local areas B, C, D, ... to be measured, and performing 2D and 3D scans of each area. In other words, after selecting an area and completing the 2D and 3D scans of that area, another area can be selected to maintain regional consistency in the 2D and 3D scans.

[0089] It should be noted that, in another embodiment, in step S2, after completing the two-dimensional scanning of the local area A, the sample is laterally adjusted by controlling the displacement system, and the local areas B, C, D, ... to be measured are selected in sequence, and a two-dimensional scanning operation is performed on each of the areas to be measured. That is, by controlling the displacement system to perform the lateral adjustment, the local areas B, C, D, ... to be measured are selected, and the normalized grayscale value of the third harmonic signal intensity of each point is obtained in sequence. , , ... and store it. Then, after focusing, select the local area A, B, C, D, ... to be measured again, and obtain the normalized grayscale value of the third harmonic signal intensity of each point in turn. , , This embodiment scans in one depth direction before scanning in another depth direction, thereby maintaining the consistency of focus.

[0090] S4, repeating the above steps in sequence to form three-dimensional images of multiple areas of the sample, and splicing the multiple three-dimensional images to form a three-dimensional image of the sample.

[0091] Optionally, stitching multiple three-dimensional images to form a three-dimensional image of the sample includes:

[0092] The two-dimensional images of the sample at different areas at any depth are spliced ​​to obtain the two-dimensional scanning image results of the sample at any depth. ;

[0093] The two-dimensional scanning image results at any depth Perform deconvolution to obtain the original image at any depth , ,in, for The Fourier transform result of for The Fourier transform result of is the point spread function of the imaging component;

[0094] For original images at different depths Stitching is performed to form a three-dimensional image of the sample.

[0095] It should be noted that, without considering the noise of the imaging system, the imaging model of this system can be simplified as follows: .

[0096] Therefore, the original image can be obtained by deconvolution operation: .

[0097] Among them, the imaging component is used to image the fluorescent beads, and the point spread function of the system is obtained through image processing. Select fluorescent beads with appropriate diameter and wavelength to prepare samples, use the imaging component to perform imaging, process the obtained images, and obtain the point spread function of the system, which is recorded as .

[0098] S5, and obtaining the defect distribution of the sample based on the distribution of light and dark pixels in the three-dimensional image.

[0099] After acquiring a 3D image, defects can be identified based on the light and dark pixels in the image and compared with different defects stored in a sample library. A sample defect assessment report is generated based on the morphology, type, and location. In other words, a data processing system, or processor, is used to stitch together the captured images. The sample defect assessment report is generated based on information such as defect morphology, type, and location, and then compared with different defects stored in a sample library.

[0100] Optionally, the detection device further includes a temperature control component, and before adjusting any area of ​​the sample to be located in the detection field of view, further includes:

[0101] The ambient temperature of the sample is controlled to suppress the drift of the sample's high-order harmonic center frequency caused by temperature fluctuations.

[0102] That is, the sample can be placed in a constant temperature environment before being scanned.

[0103] Among them, the temperature control component can regulate the temperature of the sample environment within a range of -100~1500℃. It can not only control the test temperature at a constant temperature (such as room temperature 25±0.2℃), avoiding the center frequency offset and measurement error of high-order harmonics caused by temperature effects, but also provide controllable experimental conditions for studying temperature-dependent semiconductor defect behavior.

[0104] It is understandable that some samples can generate different third harmonic signals at different ambient temperatures, that is, they are dependent on the ambient temperature. For example, at some temperatures, the defects of the sample will recover on their own, while at other temperatures, the normal structure of the sample may become abnormal. Some samples are not dependent on the ambient temperature, but the high-order harmonic signals they generate may also drift due to temperature effects. In order to stably measure the sample at a certain temperature and prevent the third harmonic signal from drifting and causing measurement errors, the sample is kept in a constant temperature environment through a temperature control component. In this way, during the scanning and imaging process, if the ambient temperature changes, it will not affect the scanning and detection of the sample, thereby improving the detection accuracy.

[0105] Optionally, after forming a three-dimensional image of any area, the method further includes:

[0106] Adjust the ambient temperature of the sample to form multiple three-dimensional images of any area at different ambient temperatures;

[0107] Repeating the aforementioned steps sequentially to form three-dimensional images of multiple regions of the sample, and stitching the multiple three-dimensional images to form the three-dimensional image of the sample includes: repeating the aforementioned steps sequentially to form three-dimensional images of multiple regions of the sample at different ambient temperatures, and stitching the three-dimensional images of the multiple regions at each ambient temperature to form three-dimensional images of the sample at different ambient temperatures;

[0108] The defect distribution of the sample is obtained based on the distribution of light and dark pixels in the 3D image, including:

[0109] Obtain the defect rate of the three-dimensional image of the sample under different ambient temperatures, and screen the ambient temperature where the defect rate of the sample is the lowest.

[0110] It is understood that in this embodiment, the first temperature can be set first, and then the detection of region A can be completed through S1-S3. Then, the second temperature can be set, and the detection of region A can be completed through S1-S3. This process can be repeated until the scanning detection of region A at multiple temperatures is completed. Then, the first temperature can be set, and then the detection of region B can be completed through S1-S3. Then, the second temperature can be set, and the detection of region B can be completed through S1-S3. This process can be repeated until the scanning detection of region B at multiple temperatures is completed. This process can be repeated until all regions of the sample are scanned and the scanning detection of the sample at multiple temperatures is completed.

[0111] In other embodiments, the first temperature may be set first, and then the detection of region A is completed through steps S1-S3, and then the detection of difference B is completed through steps S1-S3, and so on, until all regions of the sample are scanned. Then, the second temperature may be set, and the detection of region A is continued through steps S1-S3, and then the detection of difference B is completed through steps S1-S3, and so on, until all regions of the sample are scanned. This continues until all regions of the sample are scanned and the scanning and detection of the sample at multiple temperatures is completed.

[0112] Alternatively, you can first set the first temperature, then complete the detection of area A through S1-S2, then complete the detection of differentiation B through S1-S2, and so on, until all areas of the sample are scanned. Then, through S3, complete the detection of area A and differentiation B, and so on, until all areas of the sample are scanned. Then set the second temperature, then complete the detection of area A through S1-S2, then complete the detection of differentiation B through S1-S2, and so on, until all areas of the sample are scanned. Then, through S3, complete the detection of area A and differentiation B, and so on, until all areas of the sample are scanned. Until the scanning and detection of the sample at multiple temperatures are completed.

[0113] In a specific embodiment, Figure 4 The results show the relationship between the third harmonic of indium antimonide (InSb) and the signal intensity and wavelength when a femtosecond laser with a wavelength of 1040±10 nm (550 mW power, 34 MHz repetition rate, 122 fs pulse width) is applied. The central wavelength of the third harmonic signal of InSb is approximately 330.3 nm, demonstrating that InSb can generate third harmonics when a femtosecond laser with a wavelength of 1040±10 nm is incident as the fundamental frequency. When the device described in this invention is used to perform two-dimensional scanning of a semiconductor sample, locations without surface defects (scratches) will generate third harmonic signals under the excitation of the incident light. After filtering out the fundamental frequency light with a filter matching the specific wavelength, the third harmonic signal can be collected and detected by the detection system. However, locations with surface defects (scratches) will not generate third harmonic signals, and after filtering out the fundamental frequency light, the harmonic detection system will not detect the signal. Therefore, using the above system, a two-dimensional scanning result of a designated layer of the wafer surface will be obtained, where the defect-free field of view is bright and the defective position field of view is dark, as shown in FIG. Figure 5 By changing the axial position of the sample, three-dimensional results are obtained, as shown in Figure 6 shown.

[0114] This invention proposes the use of high-order harmonic signals to achieve three-dimensional, non-destructive, high-resolution detection of micro-defects within fourth-generation semiconductors, circumventing the high cost, cumbersome operation, sample limitations, and pre-processing requirements of existing technologies. Unlike electron microscopy, which requires strict sample morphology and size, and ultrasonic detection, which requires the sample and coupling medium for imaging, this invention relies on high-order harmonics to characterize micro-defects within the sample. When the ultrafast laser energy density is below the damage energy density threshold of the antimonide sample being tested, three-dimensional non-destructive testing of the sample is possible. No special sample processing is required; instead, the data processing system can be used to process and splice the complete sample, enabling internal and external defect detection.

[0115] In addition, the present invention has a complete detection process from bright field assisted positioning to three-dimensional rapid high-order harmonic detection, and finally data processing to derive result analysis, without the need for sample pretreatment. The samples can continue to be put into use after non-destructive testing. It has many advantages such as complete system, simple operation, and wide application fields. It can provide technical support for fields such as semiconductor quality inspection, raw material screening, non-destructive testing of wafer and circuit structure defects, and assist the development of important industries such as material processing and testing, chip manufacturing and structural characterization, and internal flaw detection of semiconductor devices, providing new options for the field of semiconductor testing.

[0116] Secondly, in terms of detection, this invention abandons the traditional sample displacement scanning mode and adopts a technical solution that combines beam pointing modulation and beam focal depth modulation to achieve non-contact, high-precision detection of the sample's three-dimensional area. This design not only avoids mechanical vibration errors caused by sample movement but also enables in-situ detection with nanometer-level resolution. It also seamlessly integrates with the semiconductor manufacturing module to form a closed-loop "preparation-packaging-testing" process, significantly improving the R&D efficiency of semiconductor devices.

[0117] Furthermore, the device integrates a high-precision temperature control unit for environmental control, capable of maintaining a constant test temperature or varying it over a wide range, making it suitable for monitoring semiconductor defect repair processes. This effectively addresses the high-order harmonic frequency shifts caused by temperature fluctuations in traditional systems, while providing a precisely controllable experimental platform for studying temperature-sensitive semiconductor defects, significantly improving the reliability and repeatability of test data.

[0118] Furthermore, the optical inspection system design breaks through the limitations of traditional oblique-incidence detection by achieving coaxial integration of harmonic and brightfield detection. This architecture not only simplifies the detection and positioning process but also enables dual-modal simultaneous detection. Compared to traditional split-optical designs, this solution improves system stability and detection efficiency while significantly reducing operational complexity, providing a new technical path for rapid and accurate semiconductor characterization.

[0119] In summary, according to the embodiment of the present invention, the in-situ non-destructive detection device and method of antimonide semiconductor defects proposed by the embodiment of the present invention include: a light source component for emitting a scanning beam and adjusting the emission position of the scanning beam; an objective lens focusing component for receiving, transmitting and focusing the scanning beam to be incident on the sample, and also for transmitting the reflected beam of the scanning beam by the sample; a dichroic mirror located between the light source component and the objective lens focusing component, for transmitting the scanning beam and also for reflecting the reflected beam; an imaging component for receiving the reflected beam and imaging the sample based on the third harmonic signal in the reflected beam. The imaging component can form a two-dimensional image of the sample as the light source component adjusts the emission position of the scanning beam, and can form a three-dimensional image of the sample by adjusting the focus depth of the scanning beam in combination with the objective lens focusing component. Thus, through the cooperation of the light source component and the objective lens focusing component, the sample can be detected when it is in situ, avoiding errors caused by sample displacement. In addition, the sample is imaged by the third harmonic signal generated by the sample, and the imaging is clear and has high resolution, and will not have other effects on the interior of the semiconductor.

[0120] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0121] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. An in-situ nondestructive detection device for antimonide semiconductor defects, characterized in that: include: A light source assembly, configured to emit a scanning light beam and adjust the emission position of the scanning light beam; wherein the optical parameters of the scanning light beam satisfy the following conditions: when irradiated onto a sample, a third harmonic signal can be generated in a defect-free portion of the sample; an objective lens focusing assembly, configured to receive, transmit and focus the scanning light beam incident on the sample, and also configured to transmit a light beam reflected by the sample from the scanning light beam; a dichroic mirror, located between the light source assembly and the objective lens focusing assembly, for transmitting the scanning light beam and also for reflecting the reflected light beam; an imaging assembly, configured to receive the reflected light beam and image the sample based on a third harmonic signal in the reflected light beam, wherein the imaging assembly is capable of forming a two-dimensional image of the sample as the light source assembly adjusts the exit position of the scanning light beam, and is capable of forming a three-dimensional image of the sample by adjusting the focal depth of the scanning light beam in combination with the objective lens focusing assembly; The intensity of the scanning beam The third harmonic light intensity generated by the sample Satisfy between: ;in, , is the third harmonic refractive index in the medium, is the center frequency of the non-fundamental frequency light generated by antimonide under the excitation of fundamental frequency light, is the nonlinear polarization order, is the speed of light, , , is the wave vector, is the distance light travels in antimonide, is the third-order nonlinear susceptibility.

2. The in-situ nondestructive detection device for antimonide semiconductor defects according to claim 1, characterized in that: Also includes: The temperature control component is used to maintain the ambient temperature of the sample so as to stabilize the third harmonic signal generated by the sample.

3. The in-situ nondestructive detection device for antimonide semiconductor defects according to claim 1, characterized in that: Also includes: The temperature control component is used to adjust the ambient temperature of the sample so that the imaging component can perform real-time online monitoring of temperature-sensitive defects of the sample based on the three-dimensional image.

4. The in-situ nondestructive detection device for antimonide semiconductor defects according to any one of claims 1 to 3, characterized in that: Also includes: Bright field detection assembly and beam splitter; The bright field detection component is used to emit an illumination beam to the sample, and perform bright field imaging on the sample based on a reflection beam of the illumination beam from the sample, so as to feedback and adjust the field of view of the sample to be detected; Wherein, the beam splitter is located between the dichroic mirror and the imaging assembly.

5. The in-situ nondestructive detection device for antimonide semiconductor defects according to any one of claims 1 to 3, characterized in that: Also includes: A semiconductor manufacturing component is used to perform processing actions on the sample, wherein the imaging component is used to obtain the two-dimensional image and / or three-dimensional image of the defect while the semiconductor manufacturing component is performing processing actions on the sample.

6. The in-situ nondestructive detection device for antimonide semiconductor defects according to claim 1, characterized in that: The imaging component includes a filter unit and an imaging unit. The filter unit is used to transmit the third harmonic signal, and the imaging unit is used to perform imaging based on the third harmonic signal.

7. The in-situ nondestructive detection device for antimonide semiconductor defects according to claim 1, characterized in that: The objective lens focusing assembly includes an objective lens unit and a piezoelectric displacement adjustment unit. The piezoelectric displacement adjustment unit is fixedly connected to the objective lens unit and is used to adjust the displacement of the objective lens unit in the axial direction of the scanning light beam.

8. A method for in-situ nondestructive detection of antimonide semiconductor defects, characterized in that: Detection is performed based on the antimonide semiconductor defect detection device according to any one of claims 1 to 7, and the method includes: Adjusting any area of ​​the sample to be located in the detection field of view; Control the focus of the scanning beam to be located at any depth, and the plane coordinates are located at the sample in sequence Location to Position, forming a two-dimensional image of any area; Adjust the position of the focus of the scanning beam in the depth direction, repeatedly control the focus of the scanning beam to be at any depth, and the plane coordinates are successively located at the depth of the sample. Location to position, forming a two-dimensional image of any area, forming a three-dimensional image of any area; wherein i is a positive integer; Repeating the above steps in sequence to form three-dimensional images of multiple regions of the sample, and splicing the multiple three-dimensional images to form a three-dimensional image of the sample; and obtaining a defect distribution of the sample based on a distribution of light and dark pixels in the three-dimensional image; The step of stitching the plurality of three-dimensional images to form a three-dimensional image of the sample includes: The obtained two-dimensional images of samples at different areas at any depth are spliced ​​to obtain the two-dimensional scanning image results of the sample at any depth. ; The two-dimensional scanning image results at any depth Perform deconvolution to obtain the original image at any depth , ,in, for The Fourier transform result of for The Fourier transform result of is the point spread function of the imaging component; For original images at different depths The images are stitched together to form a three-dimensional image of the sample.

9. The in-situ nondestructive detection method for antimonide semiconductor defects according to claim 8, characterized in that: The detection device further includes a temperature control component, and before adjusting any area of ​​the sample to be located in the detection field of view, further includes: The ambient temperature of the sample is controlled to suppress the drift of the high-order harmonic center frequency of the sample caused by temperature fluctuation.

10. The in-situ non-destructive detection method for antimonide semiconductor defects according to claim 9, characterized in that: After forming the three-dimensional image of any one of the regions, the method further includes: Adjusting the ambient temperature of the sample to form multiple three-dimensional images of any region at different ambient temperatures; Repeating the aforementioned steps in sequence to form three-dimensional images of multiple regions of the sample, and stitching the multiple three-dimensional images to form the three-dimensional image of the sample includes: repeating the aforementioned steps in sequence to form three-dimensional images of multiple regions of the sample at different ambient temperatures, and stitching the three-dimensional images of the multiple regions at each ambient temperature to form three-dimensional images of the sample at different ambient temperatures; Obtaining the defect distribution of the sample based on the distribution of light and dark pixels in the three-dimensional image includes: The defect rates of the three-dimensional images of the samples at different ambient temperatures are obtained, and the ambient temperature at which the defect rate of the samples is the lowest is screened.

Images