Physical unclonable function magnetic device and application method thereof

Abstract

The invention provides a physical unclonable function magnetic device and an application method thereof, the magnetic device comprises a plurality of magnetic storage units arranged in an array and a control circuit, and each magnetic storage unit comprises a spin orbit moment layer and at least one magnetic tunnel junction arranged on the spin orbit moment layer; and the control circuit is used for applying a composite reconstruction signal with oscillation change to the magnetic memory units, and forming a superposed physical field with oscillation change at the magnetic memory units so as to enable the resistance state of the magnetic tunnel junction to generate oscillation change to realize PUF reconstruction of the plurality of magnetic memory units arranged in an array. In order to solve the problems of limited CRP generated by the PUF circuit and low resource utilization rate, the physical field with oscillation change is formed through the composite reconstruction signal, so that the PUF of the magnetic tunnel junction of the SOT-MRAM generates random oscillation change, the PUF of the magnetic device can be reconstructed, the reconstructed magnetic device can generate new CRP, and the resource utilization rate is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a physical unclonable function magnetic device and an application method thereof. Background Art

[0002] The Physical Unclonable Function (PUF) acts as the "fingerprint" of a security chip. It extracts random process variations during chip manufacturing, such as variations in feature scale caused by lithography and fluctuations in threshold voltage due to random doping, to generate a secret key with properties such as randomness, uniqueness, and unclonability. This makes it suitable for improving chip security. In practical applications, a PUF exists as a stimulus-response pair. Given an input stimulus, each PUF instance generates a corresponding output based on its physical characteristics.

[0003] Currently, PUF circuits based on process variation are typically implemented using SOT-MRAM. These designs leverage the unique process characteristics of each SOT-MRAM device within each chip. However, as a static entropy source, process variation generates a limited amount of CRP, and a simple PUF circuit results in low resource utilization. Summary of the Invention

[0004] One objective of this application is to provide a physically unclonable function magnetic device. To address the issues of limited CRP and low resource utilization generated by PUF circuits, this application uses a composite reconstruction signal to create an oscillating physical field to cause random oscillations in the PUF of a SOT-MRAM magnetic tunnel junction. This allows the magnetic device's PUF to be reconfigured, and the reconstructed magnetic device can generate new CRP, thereby improving resource utilization. Another objective of this application is to provide an application method for a physically unclonable function magnetic device.

[0005] To achieve the above objectives, the present application discloses, on one hand, a physical unclonable function magnetic device, comprising a plurality of magnetic storage units arranged in an array and a control circuit, wherein the magnetic storage unit comprises a spin-orbit moment layer and at least one magnetic tunnel junction disposed on the spin-orbit moment layer;

[0006] The control circuit is used to apply an oscillating composite reconstruction signal to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction to oscillate, thereby realizing PUF reconstruction of multiple magnetic storage units arranged in an array.

[0007] Optionally, the oscillating composite reconstructed signal includes multiple reconstructed signals, wherein at least one attribute of at least one reconstructed signal oscillates; or, the oscillating composite reconstructed signal includes one reconstructed signal, multiple attributes of the one reconstructed signal oscillate.

[0008] Optional,

[0009] The attribute of the reconstruction signal has two polarities that cause the magnetic moment direction of the free layer of the magnetic tunnel junction to flip in different directions, and the effect of the attribute of the reconstruction signal on the probability of flipping the magnetic moment direction of the free layer of the magnetic tunnel junction changes with time.

[0010] Optionally, the reconstructed signal is a spin-orbit torque current, a temperature field signal, a VCMA signal, an STT current or a magnetic field signal.

[0011] Optionally, the reconstructed signal is a spin-orbit moment current input into the spin-orbit moment layer, the spin-orbit moment current is a continuous pulse, and the attributes of the continuous pulse include polarity, absolute amplitude, pulse width, duty cycle, and number of consecutive identical pulses;

[0012] The polarity of the spin-orbit torque current changes alternately over time; or,

[0013] At least one of the absolute amplitude, pulse width, duty cycle and number of consecutive identical pulses of the spin-orbit torque current decays or grows over time, forming a corresponding oscillating physical field.

[0014] Optionally, when the reconstructed signal is a magnetic field signal:

[0015] If the magnetic tunnel junction has perpendicular magnetic anisotropy, the magnetic field intensity of the magnetic field signal in the vertical direction fluctuates; if the magnetic tunnel junction has in-plane magnetic anisotropy, the magnetic field intensity of the magnetic field signal in the plane direction and in the direction of the easy magnetic axis of the magnetic tunnel junction fluctuates;

[0016] When the reconstructed signal is a spin-orbit torque current;

[0017] The magnetic tunnel junction has in-plane magnetic anisotropy, and the spin-orbit torque current oscillates along a direction perpendicular to the easy magnetic axis of the magnetic tunnel junction.

[0018] Optionally, the reconstructed signal includes a spin-orbit moment current and a magnetic field signal;

[0019] If the magnetic tunnel junction has perpendicular magnetic anisotropy, the magnetic field signal is in a vertical direction, the spin-orbit moment current is along the direction of the spin-orbit moment layer, and the magnetic tunnel junction has an equivalent magnetic field in the same direction as the spin-orbit moment current, at least one type of signal exhibits an oscillating change;

[0020] If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is perpendicular to the direction of the spin-orbit moment layer, the magnetic field signal is along the easy magnetic axis of the magnetic tunnel junction, the spin-orbit moment current is along the direction of the spin-orbit moment layer, and at least one type of signal exhibits an oscillating change;

[0021] If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer, the magnetic field signal is along the easy magnetic axis of the magnetic tunnel junction, the spin-orbit moment current is along the direction of the spin-orbit moment layer and the magnetic tunnel junction has an equivalent magnetic field in the vertical direction, at least one type of signal exhibits oscillating changes.

[0022] Optionally, an auxiliary signal is also included, and the auxiliary signal is used to enhance or weaken the physical field strength formed by the reconstructed signal.

[0023] Optional,

[0024] The composite reconstruction signal includes an oscillating spin-orbit moment current, and the auxiliary signal is an additional magnetic field signal;

[0025] If the magnetic tunnel junction has perpendicular magnetic anisotropy, the spin-orbit moment current is along the direction of the spin-orbit moment layer, the magnetic field signal is along the direction of the spin-orbit moment layer, and at least one type of signal exhibits an oscillating change;

[0026] If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer, the magnetic field signal is along the vertical direction, the spin-orbit moment current is along the direction of the spin-orbit moment layer, and at least one type of signal shows an oscillating change.

[0027] The present application also discloses an application method of a physical unclonable function magnetic device, wherein the physical unclonable function magnetic device comprises a plurality of magnetic storage units arranged in an array, wherein the magnetic storage unit comprises a spin-orbit moment layer and at least one magnetic tunnel junction provided on the spin-orbit moment layer;

[0028] The method comprises:

[0029] An oscillating composite reconstruction signal is applied to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction to oscillate, thereby realizing PUF reconstruction of multiple magnetic storage units arranged in an array.

[0030] The control circuit of the present application applies an oscillating composite reconstruction signal to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic tunnel junction in the magnetic storage unit. The superimposed oscillating physical field affects the PUF of the magnetic tunnel junction by multiple different factors, thereby achieving the purpose of rapid reconstruction of the PUF. First, the present application affects the PUF of the magnetic tunnel junction by forming an oscillating physical field, so that the PUF of the magnetic device can be reconstructed, thereby generating a new challenge-response pair (CRP). By continuously reconstructing the PUF of the magnetic storage unit of the magnetic device, a large number of CRPs in different matrix forms can be generated, thereby improving the resource utilization of the magnetic device. Second, the reconstruction signal of the present application is a composite reconstruction signal. The composite reconstruction signal can form multiple oscillating physical fields at the magnetic tunnel junction. By using multiple entropy sources, the magnetic tunnel junction may be affected differently by different physical fields. The composite reconstruction signal can increase the probability of the magnetic tunnel junction PUF undergoing effective changes under the influence of the superimposed oscillating physical field, thereby achieving the purpose of rapid PUF reconstruction. Finally, to ensure reconfigurability, existing technologies often require adjustment of reconstruction conditions based on environmental factors such as operating temperature. The present invention adopts multiple entropy sources and a probability convergence scheme, eliminating the need for repeated adjustment of reconstruction incentives. The reconstruction results are temperature robust, meeting the working requirements of industrial-grade chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0032] Figure 1 A schematic diagram showing the principle of a specific embodiment of the physical unclonable function magnetic device of the present application;

[0033] Figure 2 A schematic structural diagram showing a magnetic storage unit of a specific embodiment of a physical unclonable function magnetic device of the present application;

[0034] Figure 3 and Figure 4 A schematic diagram showing the spin-orbit moment current of a specific embodiment of the physical unclonable function magnetic device of the present application;

[0035] Figure 5 A schematic diagram showing the probability change of magnetic moment reversal under continuous pulse conditions in a specific embodiment of the physical unclonable function magnetic device of the present application;

[0036] Figure 6 and Figure 7A schematic diagram illustrating a PUF reconstruction stimulus in the prior art and the drift of the PUF reconstruction stimulus under the influence of temperature;

[0037] Figure 8 A schematic diagram showing the comparison between the PUF reconstruction of the physical unclonable function magnetic device of the present application and the reconstruction effect of the prior art;

[0038] Figure 9 and Figure 10 A flowchart showing the data-supervised PUF reconstruction in a specific embodiment of the physical unclonable function magnetic device of the present application is shown;

[0039] Figures 11a to 11c A schematic diagram showing a comparison between the control of a magnetic storage unit in the prior art and the control of a magnetic storage unit in a specific embodiment of a physical unclonable function magnetic device of the present application;

[0040] Figure 12 A schematic diagram showing a specific embodiment of the physical unclonable function magnetic device of the present application;

[0041] Figure 13 A flowchart showing a specific embodiment of the application method of the physical unclonable function magnetic device of the present application;

[0042] Figure 14 A schematic structural diagram of a computer device including an embodiment of a physical unclonable function magnetic device of the present application is shown.

[0043] Reference numerals:

[0044] D1, spin-orbit moment layer, MTJ, magnetic tunnel junction, B1, free layer, B2, barrier layer, B3, fixed layer. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0046] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0047] In this application, terms such as "upper," "lower," "left," "right," "front," "back," "top," "bottom," "inner," "outer," "center," "vertical," "horizontal," "transverse," and "longitudinal" indicate positions or locations based on the positions or locations shown in the accompanying drawings. These terms are primarily intended to better describe this application and its embodiments and are not intended to limit the devices, elements, or components indicated to having a specific orientation, or to being constructed or operated in a specific orientation.

[0048] Positional relationships such as “parallel” or “perpendicular” include not only completely “parallel” or “perpendicular” positional relationships, but also positional relationships with angular deviations relative to completely “parallel” or “perpendicular” within a preset deviation range.

[0049] Furthermore, some of the above terms may be used to express other meanings besides indicating a position or location. For example, the term "on" may also be used to indicate a dependency or connection in certain circumstances. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0050] Furthermore, the terms "installed," "disposed," "provided with," "connected," "connected," and "socketed" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integral structures; mechanical connections or electrical connections; direct connections, indirect connections through an intermediary, or internal communication between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0051] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0052] According to one aspect of the present application, this embodiment discloses a physical unclonable function magnetic device. Figure 1As shown, in this embodiment, the device includes a plurality of magnetic storage units arranged in an array and a control circuit, and the magnetic storage unit includes a spin-orbit moment layer D1 and at least one magnetic tunnel junction MTJ arranged on the spin-orbit moment layer D1.

[0053] The control circuit is used to apply an oscillating composite reconstruction signal to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction MTJ to oscillate and change, thereby realizing PUF reconstruction of multiple magnetic storage units arranged in an array.

[0054] The control circuit of the present application applies an oscillating composite reconstruction signal to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic tunnel junction (MTJ) in the magnetic storage unit. The superimposed oscillating physical field affects the PUF of the magnetic tunnel junction (MTJ) by various factors, thereby achieving the purpose of rapidly reconstructing the PUF. First, the present application affects the PUF of the magnetic tunnel junction (MTJ) by forming an oscillating physical field, so that the PUF of the magnetic device can be reconstructed, thereby generating a new CRP. By continuously reconstructing the PUF of the magnetic storage unit of the magnetic device, a large number of CRPs in different matrix forms can be generated, thereby improving the resource utilization of the magnetic device. Second, the reconstruction signal of the present application is a composite reconstruction signal. The composite reconstruction signal can form multiple oscillating physical fields at the magnetic tunnel junction (MTJ). By utilizing multiple entropy sources, the magnetic tunnel junction (MTJ) may be affected differently by different physical fields. The composite reconstruction signal can increase the probability that the PUF of the magnetic tunnel junction (MTJ) undergoes effective changes under the influence of the superimposed oscillating physical field, thereby achieving the purpose of rapidly reconstructing the PUF. Finally, to ensure reconfigurability, existing technologies often require adjustment of reconstruction conditions based on environmental factors such as operating temperature. The present invention adopts multiple entropy sources and a probability convergence scheme, eliminating the need for repeated adjustment of reconstruction incentives. The reconstruction results are temperature robust, meeting the working requirements of industrial-grade chips.

[0055] In an optional embodiment, the oscillating composite reconstructed signal includes multiple reconstructed signals, wherein at least one attribute of at least one reconstructed signal oscillates; or, the oscillating composite reconstructed signal includes one reconstructed signal, wherein multiple attributes of the one reconstructed signal oscillate.

[0056] Specifically, the inventors of this application studied the factors that can affect the PUF of a magnetic storage unit and found that the reconstruction signal that can change the magnetic storage unit can be a variety of types of signals, and that changes in different signal attributes can have different effects on the magnetic storage unit. Based on this, in order to quickly reconstruct the PUF of the magnetic device to generate a new CRP, this application uses a composite reconstruction signal to cause multiple oscillatory changes in the physical field of the magnetic storage unit. The composite reconstruction signal can be a composite reconstruction signal formed by oscillatory changes in different attributes of a reconstruction signal, or it can be multiple reconstruction signals, where one or more attributes of the reconstruction signal form the composite reconstruction signal.

[0057] For example, the reconstructed signal may be a spin-orbit torque current, a temperature field signal, a VCMA signal, or a magnetic field signal. The reconstructed signal of the spin-orbit torque current, the temperature field signal, the VCMA signal, the STT current, or the magnetic field signal includes at least one attribute. For example, the attributes of the spin-orbit torque current include at least current amplitude, pulse width, and duty cycle.

[0058] In one embodiment, the reconstruction signal is a spin-orbit torque current, the amplitude and pulse width of the spin-orbit torque current change over time, or the amplitude and duty cycle of the spin-orbit torque current change over time, that is, at least two properties of the spin-orbit torque current change. The oscillatory changes of at least two properties increase the influence range of the generated superimposed oscillating physical field, thereby achieving rapid reconstruction of the magnetic device PUF.

[0059] In another embodiment, the reconstruction signal includes at least a spin-orbit moment current and a VCMA signal. The amplitude of the spin-orbit moment current oscillates, and the magnitude of the VCMA signal also oscillates. That is, the oscillating composite reconstruction signal includes multiple reconstruction signals, at least two of which oscillate. The oscillating reconstruction signal can have a single attribute oscillating or multiple attributes oscillating. The control circuit is required to control the application of the VCMA signal to the top of the magnetic tunnel junction MTJ.

[0060] It should be noted that the oscillatory change of the attribute of the reconstructed signal refers to the attribute of the reconstructed signal continuously changing according to a predetermined rule, where the predetermined rule can be gradually increasing, gradually decreasing, increasing at predetermined intervals, decreasing at predetermined intervals, or changing according to a preset curve. Of course, those skilled in the art can set the predetermined rule according to actual needs, and this application is not limited thereto.

[0061] Optionally, when the composite reconstruction signal includes a single reconstruction signal, the various properties of the composite reconstruction signal can change sequentially or simultaneously, or they can change sequentially and then simultaneously. The superposition of different oscillating physical fields formed by the changes in multiple properties causes different changes in the magnetic tunnel junction PUF of the magnetic storage unit, thereby achieving rapid reconstruction of the PUF. Similarly, when the composite reconstruction signal includes multiple reconstruction signals, the property changes of the multiple reconstruction signals can change sequentially or simultaneously, or they can change sequentially and then simultaneously, forming multiple different superimposed oscillating physical fields, guiding the changes in the magnetic storage unit PUF in multiple directions and at multiple levels, thereby achieving rapid reconstruction of the PUF.

[0062] In an optional embodiment, the properties of the reconstruction signal have two polarities that cause the magnetic moment direction of the free layer of the magnetic tunnel junction to flip in different directions, and the effect of the properties of the reconstruction signal on the probability of flipping the magnetic moment direction of the free layer of the magnetic tunnel junction changes with time.

[0063] Specifically, it is understandable that Figure 2 As shown, the magnetic tunnel junction MTJ includes a fixed layer B3, a barrier layer B2, and a free layer B1 arranged in sequence from top to bottom. The bottom surface of the free layer B1 is fixedly connected to the spin-orbit torque layer D1. The resistance of the magnetic tunnel junction MTJ depends on the magnetization direction of the fixed layer B3 and the free layer B1, and the magnetization direction of the free layer B1 and the fixed layer B3 is determined by the direction of the magnetic moment. When the magnetic moment directions of the fixed layer B3 and the free layer B1 are the same, the magnetic tunnel junction MTJ is in a low resistance state (low resistance state). When the magnetic moment directions of the fixed layer B3 and the free layer B1 are opposite, the magnetic tunnel junction MTJ is in a high resistance state (high resistance state). The high resistance state and low resistance state of the magnetic tunnel junction MTJ can be pre-assigned to different data. For example, the high resistance state can be pre-assigned to data "1" and the low resistance state can be pre-assigned to data "0". Then, a current or voltage is input to the magnetic tunnel junction MTJ through a reading circuit. Based on the change in current or voltage, it can be determined whether the resistance state of the magnetic tunnel junction MTJ is a high resistance state or a low resistance state. Based on the resistance state of the magnetic tunnel junction MTJ, it can be determined whether the data stored in the magnetic tunnel junction MTJ is "1" or "0". Among them, determining the range of the high resistance state and the low resistance state is a common technical means in the field. Those skilled in the art can determine the resistance value range of the high resistance state and the low resistance state of the magnetic tunnel junction MTJ based on common knowledge, and this application will not elaborate on it here.

[0064] Process factors in magnetic storage cells result in different PUFs for different magnetic tunnel junctions (MTJs), and their responses to different reconstruction signals are also different. Therefore, applying different reconstruction signals to different magnetic storage cells or causing different changes in the properties of the reconstruction signals will also cause different degrees of change in the PUF of the magnetic tunnel junction. In order to achieve rapid reconstruction of the PUF, the properties of the reconstruction signal have two polarities that cause the direction of the magnetic moment of the free layer of the magnetic tunnel junction to flip in different directions, so that the magnetic tunnel junction can be deflected to a high-resistance state and a low-resistance state respectively under the action of the reconstruction signal, or ultimately obtain a deterministic change to a low-resistance state or a high-resistance state. In addition, the property intensity of the two polarity directions of the reconstruction signal oscillates so that the magnitude of the effect of the probability of flipping the direction of the magnetic moment of the free layer of the magnetic tunnel junction changes with time, so that the final resistance state of most magnetic tunnel junctions can change under the action of the oscillating composite reconstruction signal, achieving rapid reconstruction of the PUF of the magnetic device and forming a new CRP space.

[0065] Therefore, in order to randomize the resistance state distribution of the arrayed magnetic storage cells in the magnetic device under the action of the input signal, the properties of the reconstruction signal are configured to have two polarities that cause the magnetic moment direction of the free layer of the magnetic tunnel junction to flip in different directions. Therefore, under the action of the composite reconstruction signal, the PUF of the magnetic storage cells will not change in only one resistance state direction, and the effect of the properties of the reconstruction signal on the probability of flipping the magnetic moment direction of the free layer of the magnetic tunnel junction will vary over time. Ultimately, under the action of the composite reconstruction signal, the magnetic storage cells in the magnetic device achieve a basic equilibrium of different resistance states, thereby realizing random and rapid reconstruction of the PUF of the magnetic device.

[0066] In an optional embodiment, the reconstructed signal is a spin-orbit torque current input to the spin-orbit torque layer D1, the spin-orbit torque current is a continuous pulse, and the attributes of the continuous pulse include polarity, absolute amplitude, pulse width, duty cycle, and number of consecutive identical pulses;

[0067] The polarity of the spin-orbit torque current changes alternately over time; or, at least one of the absolute amplitude, pulse width, duty cycle and number of consecutive identical pulses of the spin-orbit torque current decays or increases over time, forming a corresponding oscillating physical field.

[0068] Specifically, when the reconstructed signal included in the composite reconstructed signal is a spin-orbit torque current, the spin-orbit torque current can be in the form of continuous pulses, and the amplitude, pulse width, duty cycle formed, and the number of consecutive identical pulses in the current can all be changed by attenuation or growth. Of course, attenuation and growth can also be repeated based on actual needs to form an oscillating physical field formed by changes in different properties. For example, Figure 3 and Figure 4The polarity of the spin-orbit moment current pulse shown in the figure alternates over time, and the amplitude and pulse width of the pulse gradually change. This allows the amplitude and pulse width of the spin-orbit moment current pulse to change simultaneously and repeatedly decay and grow, thereby expanding the range of variation of the formed oscillating physical field and quickly reconstructing the PUF.

[0069] In the specific example, for Figure 3 The spin-orbit moment current of S1~S4 is opposite to the current polarity of D1~D4, which makes the direction of easy magnetic axis magnetic moment reversal different. Moreover, the amplitude of the current is getting smaller and smaller in the directions of S1~S4 and D1~D4, and the probability of deterministic reversal of the magnetic moment is getting smaller. For example, assuming that S1 is written in the To-P direction with a reversal probability of 90%, a low-resistance magnetic tunnel junction of nearly 90% can be obtained, and D1 is written in the To-AP direction with a reversal probability of 90%, a high-resistance magnetic tunnel junction of nearly 10%+90%*90% can be obtained; S2 is written in the To-P direction with a reversal probability of 70%, and D2 is written in the To-AP direction with a reversal probability of 70%. Of course, in actual applications, those skilled in the art can set the reversal probability of the current and the change of the reversal probability according to actual needs, and this application is not limited to this. Therefore, the spin-orbit torque current uses multiple sets of continuous pulses, each set of continuous pulses includes two polarity directions. The pulses of the two polarity directions flip the magnetic moment of the free layer in opposite directions. Multiple sets of continuous pulses can gradually reduce the probability of flipping the magnetic moment of the free layer, and finally reach a high resistance state close to 50% and a low resistance state close to 50%, such as Figure 5 shown.

[0070] In an optional embodiment, when the reconstruction signal is a magnetic field signal, if the magnetic tunnel junction MTJ has perpendicular magnetic anisotropy, the magnetic field intensity in the vertical direction of the magnetic field signal oscillates; if the magnetic tunnel junction MTJ has in-plane magnetic anisotropy, the magnetic field signal is in a planar direction and the magnetic field intensity in the easy magnetic axis direction of the magnetic tunnel junction MTJ oscillates.

[0071] Specifically, the reconstruction signal can be a magnetic field signal, that is, an external magnetic field applied to the magnetic storage unit. Due to the different magnetic moment directions of the magnetic materials of the magnetic tunnel junction (MTJ), the changing magnetic field direction formed by the magnetic field signal has different effects on the magnetic moment of the MTJ. In order to effectively reconstruct the PUF of the MTJ through changes in the magnetic field, when the MTJ has perpendicular magnetic anisotropy and the magnetic moment direction of the MTJ magnetic layer is in the vertical direction, the magnetic field signal is adjusted so that the vertical magnetic field strength formed by the magnetic field signal oscillates, thereby strengthening the effect on the perpendicular magnetic anisotropy of the MTJ and reconstructing the PUF of the magnetic device. Similarly, if the MTJ has in-plane magnetic anisotropy and the magnetic moment direction of the MTJ magnetic free layer is in the plane direction of the magnetic free layer, the magnetic field signal is adjusted so that the magnetic field strength formed by the magnetic field signal oscillates along the easy magnetic axis of the free layer, thereby strengthening the effect on the in-plane magnetic anisotropy of the MTJ and reconstructing the PUF of the magnetic device.

[0072] In a preferred embodiment, the reconstructed signal includes a spin-orbit torque current and a magnetic field signal.

[0073] If the magnetic tunnel junction has perpendicular magnetic anisotropy, the magnetic field signal is in a vertical direction, the spin-orbit moment current is along the direction of the spin-orbit moment layer D1 and the magnetic tunnel junction has an equivalent magnetic field in the same direction as the spin-orbit moment current, and at least one type of signal exhibits oscillating changes.

[0074] If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is perpendicular to the direction of the spin-orbit moment layer D1, the magnetic field signal is along the easy magnetic axis of the magnetic tunnel junction, and the spin-orbit moment current is along the direction of the spin-orbit moment layer D1, and at least one type of signal shows an oscillating change.

[0075] If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer D1, the magnetic field signal is along the easy magnetic axis of the magnetic tunnel junction, the spin-orbit moment current is along the direction of the spin-orbit moment layer D1 and the magnetic tunnel junction has an equivalent magnetic field in the vertical direction, at least one type of signal exhibits oscillating changes.

[0076] In this preferred embodiment, a composite reconstruction signal is formed by combining two reconstruction signals: the spin-orbit torque current and the magnetic field signal. The oscillation pattern of the reconstruction signal is specifically adjusted for different types of magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy and in-plane magnetic anisotropy, enabling rapid reconstruction of the magnetic device PUF using the composite reconstruction signal.

[0077] For example, for a magnetic tunnel junction MTJ with in-plane magnetic anisotropy, if the easy magnetic axis direction of the free layer of the magnetic tunnel junction is perpendicular to the direction of the spin-orbit moment layer D1, a SOT current reconstruction signal is applied along the direction of the spin-orbit moment layer D1, and another reconstruction signal of the magnetic field signal along the easy magnetic axis direction of the free layer in the plane of the spin-orbit moment layer is applied. Under the action of the composite oscillating changing physical field of the SOT current and magnetic field signals, the PUF of the magnetic device is quickly reconstructed.

[0078] If the easy magnetic axis direction of the free layer of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer D1, a SOT current reconstruction signal is applied along the direction of the spin-orbit moment layer D1 and an equivalent magnetic field in the vertical direction is set to assist the SOT current to achieve the reversal of the magnetic moment direction. At the same time, another reconstruction signal of the magnetic field signal along the easy magnetic axis direction of the free layer in the spin-orbit moment layer plane is used. Under the action of the composite oscillating changing physical field of the SOT current and magnetic field signal, the PUF of the magnetic device is quickly reconstructed.

[0079] For a magnetic tunnel junction MTJ with perpendicular magnetic anisotropy, the magnetic field strength in the vertical direction of the magnetic field signal oscillates, and an oscillating physical field is formed by reconstructing the magnetic field signal. The spin-orbit moment current oscillates along the direction D1 of the spin-orbit moment layer, and an equivalent magnetic field in the same direction as the spin-orbit moment current is set to assist the SOT current in achieving magnetic moment direction reversal.

[0080] In an optional embodiment, the control circuit is further configured to apply an auxiliary signal to the magnetic storage unit, wherein the auxiliary signal is configured to enhance or weaken the physical field strength formed by the reconstruction signal.

[0081] Specifically, it is understood that when the signal strength provided by the reconstruction signal (e.g., spin-orbit torque current) generating device is limited or the generated reconstruction signal is fixed, the effect of the reconstruction signal on the magnetic unit is limited. Therefore, in this optional embodiment, an auxiliary signal is generated by the control circuit, and the auxiliary signal is used to enhance or weaken the effect of the reconstruction signal, thereby adjusting the strength of the reconstruction signal and achieving flexible control of the reconstruction signal.

[0082] In an optional embodiment, the composite reconstruction signal includes an oscillating spin-orbit moment current, and the auxiliary signal is an additional magnetic field signal. If the magnetic tunnel junction MTJ has perpendicular magnetic anisotropy, the spin-orbit moment current oscillates along the direction of the spin-orbit moment layer D1, and the magnetic field intensity of the magnetic field signal oscillates along the direction of the spin-orbit moment layer D1. If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer, the magnetic field intensity of the magnetic field signal oscillates along the vertical direction, and the spin-orbit moment current oscillates along the direction of the spin-orbit moment layer.

[0083] Specifically, it can be understood that the spin Hall effect formed by the spin-orbit torque current can be enhanced or weakened under the action of an external magnetic field, so that the influence of the oscillating physical field formed by the spin-orbit torque current on the magnetic tunnel junction MTJ can be adjusted by setting an external magnetic field.

[0084] For a perpendicularly anisotropic MTJ, the magnetic field generated by both the spin-orbit torque current and the magnetic field signal is along the spin-orbit torque layer D1, enhancing the effect of the spin-orbit torque current through the magnetic field. For an in-plane anisotropic MTJ, the easy magnetic axis of the MTJ free layer is along the spin-orbit torque layer D1, the spin-orbit torque current is along this direction, and the magnetic field generated by the magnetic field signal is perpendicular, enhancing the stability of the spin-orbit torque current to changes in the magnetic moment direction.

[0085] In summary, if Figure 6 As shown in the figure, traditional PUF reconstruction usually uses a single excitation signal. The excitation signal is positively correlated with the high-resistance state or low-resistance state in the array, and can only achieve a single adjustment from all 0 to all flipped to 1. PUF reconstruction generally uses the excitation interval corresponding to the Psw = 50% ± a area, and then optimizes the array statistics through post-processing and other means to achieve ~50% 1 and ~50% 0 in the array. Multiple adjustments are required to achieve the desired PUF reconstruction. Moreover, in this case, the single excitation is easily affected by the external environment, and the excitation conditions drift. There is no universal excitation condition applicable to the entire temperature range, such as Figure 7 This application uses a composite reconstruction signal to form a composite oscillating physical field so that the magnetic device can be quickly reconstructed to obtain a random state with a high resistance state and a low resistance state accounting for nearly 50%. Figure 8 As shown, compared with the traditional reconstruction method, the PUF reconstruction method of the present application can achieve the required high and low resistance random distribution state of the magnetic tunnel junction array in a very short time, thereby realizing rapid reconstruction of the PUF.

[0086] The present application is further described below through some specific examples.

[0087] In a specific example, the magnetic tunnel junction has perpendicular magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, and the reconstructed signal includes a magnetic field signal, which forms a magnetic field that oscillates vertically in the Z direction.

[0088] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis direction of the magnetic tunnel junction free layer on the spin-orbit moment layer is along the Y direction, and the reconstructed signal includes a magnetic field signal, which forms a magnetic field that oscillates in the Y direction.

[0089] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis direction of the free layer of the magnetic tunnel junction on the spin-orbit moment layer is along the X direction, and the reconstructed signal includes a magnetic field signal, which forms a magnetic field that oscillates in the X direction.

[0090] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis direction of the magnetic tunnel junction free layer on the spin-orbit moment layer is along the Y direction, and the reconstructed signal includes a spin-orbit moment current, and the direction of the spin-orbit moment current oscillates along the X direction.

[0091] In a specific example, the magnetic tunnel junction has perpendicular magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the reconstruction signal includes a spin-orbit moment current and a magnetic field signal, the magnetic field signal is along the vertical Z direction, the direction of the spin-orbit moment current is along the X direction, and an equivalent magnetic field is set in the X direction, wherein at least one reconstruction signal exhibits an oscillating change.

[0092] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis direction of the magnetic tunnel junction free layer on the spin-orbit moment layer is along the Y direction, and the reconstruction signal includes a spin-orbit moment current and a magnetic field signal, the magnetic field signal is along the Y direction, and the direction of the spin-orbit moment current is along the X direction, wherein at least one reconstruction signal exhibits an oscillating change.

[0093] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis direction of the magnetic tunnel junction free layer on the spin-orbit moment layer is along the X direction, the reconstruction signal includes a spin-orbit moment current and a magnetic field signal, the magnetic field signal forms an X direction, the direction of the spin-orbit moment current is along the X direction and an equivalent magnetic field is arranged in the vertical Y direction, wherein at least one reconstruction signal exhibits an oscillating change.

[0094] In a specific example, the magnetic tunnel junction has perpendicular magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the reconstruction signal includes a spin-orbit moment current, and an additional magnetic field signal is also provided. The additional magnetic field signal forms an X direction, and the direction of the spin-orbit moment current is along the X direction, wherein at least one reconstruction signal exhibits an oscillating change.

[0095] In a specific example, the magnetic tunnel junction has in-plane magnetic anisotropy, the spin-orbit moment layer is arranged along the X direction, the easy magnetic axis of the magnetic tunnel junction free layer above the spin-orbit moment layer is oriented along the X direction, the reconstructed signal includes a spin-orbit moment current, and an additional magnetic field signal is also provided, the additional magnetic field signal forms a magnetic field that oscillates in the Z direction, and the direction of the spin-orbit moment current is oriented along the X direction. It should be noted that the X, Y, and Z directions are three mutually perpendicular directions of a rectangular coordinate system, and the signals along the X, Y, and Z directions can be the directions of the signal or the directions of the signal components, as long as the signal has components in the corresponding directions.

[0096] In an optional embodiment, the control circuit further includes a reading circuit. The control circuit is configured to read the resistance state of the magnetic tunnel junctions (MTJs) of the plurality of magnetic storage cells arranged in an array through the reading circuit, and if the resistance state of the magnetic tunnel junctions (MTJs) does not satisfy a preset resistance state distribution condition, redetermine a reconstruction signal and apply the redetermined reconstruction signal to the magnetic storage cells.

[0097] Specifically, in this optional embodiment, if Figure 9 As shown, a method for monitoring the storage data distribution is selected to evaluate the PUF reconstruction. When the resistance state distribution of the magnetic tunnel junction (MTJ) does not meet the preset resistance state distribution condition, that is, the PUF reconstruction fails to achieve the intended purpose, the composite reconstruction signal can be re-determined to reconstruct the magnetic storage unit until the resistance state distribution condition is met. The resistance state distribution condition can be the resistance state distribution of each magnetic storage unit preset by those skilled in the art based on actual needs, or it can be the ratio of high resistance state to low resistance state. In actual applications, it can be set according to actual needs and is not limited in this application.

[0098] In an optional embodiment, if Figure 10 As shown, the impact of different reconstruction signals, their properties, and the form of the reconstruction signal's oscillation on the magnetic storage unit can be predetermined. This means the relationship between the properties of the reconstruction signal and the probability of magnetic moment reversal in the free layer of the magnetic tunnel junction can be predetermined. When determining a composite reconstruction signal, the corresponding composite reconstruction signal is selected based on the magnitude of the impact, allowing for rapid PUF reconstruction.

[0099] In an optional embodiment, the resistance state distribution of the magnetic tunnel junction MTJ after reconstruction of the magnetic storage cells in the rows and / or columns of the magnetic device can be read, and a separate PUF reconstruction can be performed after re-determining the composite reconstruction signal for the rows and / or magnetic storage cells that do not meet the resistance state distribution conditions.

[0100] like Figure 11a As shown, in a conventional magnetic device, it is usually necessary to provide a switching element for each magnetic storage unit. In an optional embodiment, as shown in FIG. Figure 11b and Figure 11cAs shown, the control circuit of the present application can control the input of spin-orbit torque current to the magnetic device through a switch element. That is, the control circuit is electrically connected to the spin-orbit torque layer D1 of all magnetic storage units through a switch element. When the switch element is turned on, the control circuit inputs the spin-orbit torque current to the spin-orbit torque layer D1 of all magnetic storage units. Compared with the existing control circuit, it is simpler, reduces the number of switch elements, and improves the storage density. Of course, in actual applications, those skilled in the art can set the specific circuit structure of the control circuit according to actual needs, as long as the function of the control circuit can be realized, and this application is not limited to this.

[0101] It should be noted that one magnetic tunnel junction MTJ or multiple magnetic tunnel junctions MTJ may be provided on the spin-orbit moment layer D1 .

[0102] In an optional embodiment, the present application does not limit the shape of the spin-orbit moment layer D1. In one embodiment, each magnetic storage unit of the magnetic device may include a spin-orbit moment layer D1, and then the magnetic storage units are electrically connected by wires to form a magnetic device, such as Figure 12 In another embodiment, the magnetic device may include a hollow spin-orbit moment layer D1, and the hollow spin-orbit moment layer D1 constitutes the spin-orbit moment layer D1 of the magnetic storage units arranged in an array.

[0103] In an optional embodiment, the spin-orbit moment layer D1 may be in a strip, square, V-shaped, concave shape, or include multiple branches, so as to be used to set up one or more magnetic tunnel junctions (MTJs). In practical applications, those skilled in the art may set the shape of the spin-orbit moment layer D1, as well as the position and number of the magnetic tunnel junctions (MTJs) on the spin-orbit moment layer D1, according to actual needs, so that the easy magnetic axis direction of the magnetic tunnel junction (MTJ) is parallel to the direction of the spin-orbit moment current or is less than a preset threshold. This application is not limited to this.

[0104] It should be noted that the signal of the present application can use pulses of different polarities and amplitudes, and the pulse shape can use square waves, triangular waves, periodic pulses, irregular pulses, multiple pulses of repeated reset and writing, and step pulses and other waveforms. The present application does not limit this.

[0105] In an optional embodiment, the magnetic device of the present application may also include a self-write-back circuit to reduce the native BER and improve the reliability of the PUF. The self-write-back circuit can perform data processing operations such as hash function calculations and shift XOR operations. Those skilled in the art can design the specific structure of the self-write-back circuit based on actual needs. This is a conventional technique in the art and will not be described in detail here.

[0106] It should be noted that the sizes of different magnetic tunnel junctions MTJ in this application can be the same or different. The size of the magnetic tunnel junction MTJ and the size and shape of the spin-orbit moment layer D1 can be set according to actual needs, and this application does not limit this.

[0107] It should be noted that the current input points at both ends of the spin-orbit moment layer D1 can be set on the side surfaces at both ends of the spin-orbit moment layer D1, or on the side surfaces of the edges at both ends, such as the top or bottom surfaces of the edges at both ends of the spin-orbit moment layer D1. Of course, those skilled in the art can also set each current input point according to actual needs, and this application does not limit this.

[0108] It should be noted that the magnetic tunnel junction MTJ of the present application is arranged on the spin-orbit moment layer D1. In the vertical direction, the magnetic tunnel junction MTJ can be on the top and the spin-orbit moment layer D1 can be on the bottom. In some scenarios, due to the limitations and influence of process factors, the magnetic tunnel junction MTJ and the spin-orbit moment layer D1 can also be flipped, that is, the magnetic tunnel junction MTJ is on the bottom and the spin-orbit moment layer D1 is on the top. The free layer B1 of the magnetic tunnel junction MTJ and the spin-orbit moment layer D1 can be fixed. These schemes should also be within the scope of protection of the present application.

[0109] It should be noted that the magnetic tunnel junction MTJ of the present application needs to have shape anisotropy, that is, a non-symmetrical magnetic tunnel junction MTJ. For example, the available shapes of the magnetic tunnel junction MTJ include but are not limited to ellipse, diamond, rectangle, and triangle.

[0110] In a preferred embodiment, to adjust the characteristics of the magnetic tunnel junction (MTJ), the MTJ may further include at least one of an insertion layer, a pinning layer, a seed layer, and a capping layer. Each layer may be configured as one or more layers based on actual needs, and those skilled in the art may configure the top-down order of the MTJ layers as needed, which is not limited by the present invention.

[0111] Preferably, the spin-orbit moment layer D1 is rectangular, so that the top surface area of the spin-orbit moment layer D1 is larger than the area occupied by the at least one magnetic tunnel junction (MTJ) disposed on the spin-orbit moment layer D1, and the outer edge of the at least one magnetic tunnel junction (MTJ) is located inward of the outer edge of the spin-orbit moment layer D1. Optionally, multiple magnetic tunnel junctions (MTJs) can be disposed on the same spin-orbit moment layer D1, enabling simultaneous data write operations to multiple MTJs, reducing the number of control transistors, thereby increasing integration and reducing circuit power consumption.

[0112] In a preferred embodiment, when inputting signals to the spin-orbit moment layer D1 and the magnetic tunnel junction MTJ, electrodes can be provided on the spin-orbit moment layer D1 and the magnetic tunnel junction MTJ. For example, a top electrode is provided on top of the magnetic tunnel junction MTJ, and input and output electrodes are provided at input points on opposite sides of the spin-orbit moment layer D1. Preferably, the electrode material can be any one of tantalum Ta, aluminum Al, gold Au, or copper Cu.

[0113] Preferably, the excitation source of the SOT current may be a current source or a voltage source.

[0114] Preferably, the material of the free layer B1 and the fixed layer B3 may be a ferromagnetic metal, and the material of the barrier layer B2 may be an oxide. The magnetic tunnel junction MTJ has perpendicular magnetic anisotropy, which means that the magnetization direction of the free layer B1 and the fixed layer B3 forming the magnetic tunnel junction MTJ is in the perpendicular direction. The ferromagnetic metal may be a mixed metal material formed by at least one of cobalt iron CoFe, cobalt iron boron CoFeB or nickel iron NiFe, and the proportions of the mixed metal materials may be the same or different. The oxide may be one of oxides such as magnesium oxide MgO or aluminum oxide Al2O3, which is used to generate a tunneling magnetoresistance effect. In practical applications, the ferromagnetic metal and the oxide may also be made of other feasible materials, and the present invention is not limited to this.

[0115] The free layer B1 of the magnetic tunnel junction MTJ is in contact and fixed with the spin-orbit moment layer D1. The layers of the magnetic tunnel junction MTJ and the spin-orbit moment layer D1 can be deposited on the substrate in sequence from bottom to top through traditional methods such as ion beam epitaxy, atomic layer deposition or magnetron sputtering, and then multiple magnetic tunnel junctions MTJs can be prepared through traditional nanodevice processing techniques such as photolithography and etching.

[0116] In a preferred embodiment, the spin-orbit moment layer D1 is a spin-orbit moment layer D1 composed of a heavy metal film, an antiferromagnetic film or other materials. The heavy metal film or antiferromagnetic film can be made into a rectangle, and its top area is preferably larger than the bottom area of the outline formed by all magnetic tunnel junctions MTJ, so that one or more magnetic tunnel junctions MTJ can be set, and the bottom surface shape of the magnetic tunnel junction MTJ is completely embedded in the top surface shape of the heavy metal film or antiferromagnetic film. Preferably, the material of the spin-orbit moment layer D1 can be selected from one of the materials such as platinum Pt, tantalum Ta or tungsten W. Different materials of the underlying spin-orbit moment layer D1 have different signs of the spin Hall angle, corresponding to different SOT currents, and the polarization direction of the resulting spin current is also different. It is preferred to use metals with negative spin Hall angles such as W. For metals such as Pt, the spin Hall angle is positive. In practical applications, the spin-orbit moment layer D1 can also be formed using other feasible materials, and the present invention is not limited to this.

[0117] In this embodiment, the magnetic tunnel junction (MTJ) includes a top pinned layer (B3), a free layer (B1) in contact with a spin-orbit torque layer (D1), and a barrier layer (B2) disposed between the pinned layer (B3) and the free layer (B1). The MTJ has a three-layer structure and includes only one free layer (B1). In other embodiments, the free layer (B1) may be multiple, i.e., two or more free layers (B1). The MTJ then includes a top pinned layer (B3), multiple free layers (B1), and a barrier layer (B2) disposed between each two adjacent layers. The bottom free layer (B1) is disposed in contact with the spin-orbit torque layer (D1). For example, in a specific example, when two free layers (B1) are included, the magnetic storage unit (1) structure may include a spin-orbit torque layer (D1), a second free layer (B1) disposed sequentially on the spin-orbit torque layer (D1), a barrier layer (B2), a first free layer (B1), a barrier layer (B2), and a pinned layer (B3).

[0118] Based on the same principle, the present application also discloses an application method of a physical unclonable function magnetic device. The physical unclonable function magnetic device includes a plurality of magnetic storage units arranged in an array, each of which includes a spin-orbit moment layer D1 and at least one magnetic tunnel junction MTJ disposed on the spin-orbit moment layer D1;

[0119] In this embodiment, Figure 13 As shown, the method includes:

[0120] S100: applying an oscillating composite reconstruction signal to the magnetic storage unit to form a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction MTJ to oscillate and achieve PUF reconstruction of multiple magnetic storage units arranged in an array.

[0121] Since the principle of solving the problem by this method is similar to that of the above device, the implementation of this method can refer to the implementation of the device and will not be repeated here.

[0122] The magnetic device of the present application can be used to constitute a memory in a computer device or a readable medium, and the memory includes permanent and non-permanent, removable and non-removable media and can be implemented by any method or technology to store information. The information can be a computer-readable instruction, a data structure, a module of a program or other data. Examples of applications of multifunctional magnetic random access memory include, but are not limited to, random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.

[0123] Since the principle of solving the problem of the multifunctional magnetic random access memory is similar to that of the multifunctional magnetic random access memory unit, the implementation of the multifunctional magnetic random access memory can refer to the implementation of the multifunctional magnetic random access memory unit, which will not be repeated here.

[0124] Based on the same principle, this embodiment also discloses a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor.

[0125] The processor and / or the memory include the multifunctional magnetic random access memory unit as described in this embodiment.

[0126] The multifunctional magnetic random access memory unit described in the above embodiments can be provided in a product device having a certain function. A typical implementation device is a computer device. Specifically, the computer device can be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smartphone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0127] In a typical example, a computer device specifically includes a memory, a processor, and a computer program stored in the memory and executable on the processor. The processor and / or the memory include the multifunctional magnetic random access memory unit as described in this embodiment.

[0128] Reference below Figure 14 , which shows a structural diagram of a computer device 600 suitable for implementing an embodiment of the present application.

[0129] like Figure 14 As shown, computer device 600 includes a central processing unit (CPU) 601, which can perform various appropriate tasks and processes according to a program stored in a read-only memory (ROM) 602 or a program loaded from a storage portion 608 into a random access memory (RAM) 603. Various programs and data required for the operation of system 600 are also stored in RAM 603. CPU 601, ROM 602, and RAM 603 are connected to each other via a bus 604. An input / output (I / O) interface 605 is also connected to bus 604.

[0130] The following components are connected to the I / O interface 605: an input section 606 including a keyboard, a mouse, and the like; an output section 607 including devices such as a cathode ray tube (CRT), a liquid crystal display (LCD), and a speaker; a storage section 608 including devices such as a hard disk; and a communication section 609 including a network interface card such as a LAN card or a modem. The communication section 609 performs communication processing via a network such as the Internet. A drive 610 is also connected to the I / O interface 605 as needed. Removable media 611, such as a magnetic disk, an optical disk, a magneto-optical disk, or a semiconductor memory, is installed in the drive 610 as needed, so that computer programs read from the media can be installed in the storage section 608 as needed.

[0131] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0132] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0133] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0134] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0135] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Furthermore, the present application may be applied in the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0136] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communications network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0137] The various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the system embodiments are generally similar to the method embodiments, so the description is relatively simple. For relevant parts, refer to the description of the method embodiments.

[0138] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.

Claims

1. A physically unclonable function magnetic device, characterized in that: The device comprises a plurality of magnetic storage units arranged in an array and a control circuit, wherein the magnetic storage unit comprises a spin-orbit moment layer and at least one magnetic tunnel junction provided on the spin-orbit moment layer; The control circuit is used to apply an oscillating composite reconstruction signal to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction to oscillate, thereby realizing PUF reconstruction of multiple magnetic storage units arranged in an array.

2. The physically unclonable function magnetic device according to claim 1, characterized in that: The oscillating composite reconstructed signal includes multiple reconstructed signals, wherein at least one attribute of at least one reconstructed signal oscillates; or, the oscillating composite reconstructed signal includes one reconstructed signal, wherein multiple attributes of the one reconstructed signal oscillate.

3. The physical unclonable function magnetic device according to claim 2, characterized in that: The attribute of the reconstruction signal has two polarities that cause the magnetic moment direction of the free layer of the magnetic tunnel junction to flip in different directions, and the effect of the attribute of the reconstruction signal on the probability of flipping the magnetic moment direction of the free layer of the magnetic tunnel junction changes with time.

4. The physically unclonable function magnetic device according to claim 2, characterized in that: The reconstructed signal is a spin-orbit torque current, a temperature field signal, a VCMA signal, an STT current or a magnetic field signal.

5. The physically unclonable function magnetic device according to claim 4, characterized in that: The reconstructed signal is a spin-orbit moment current input into the spin-orbit moment layer, the spin-orbit moment current is a continuous pulse, and the properties of the continuous pulse include polarity, absolute amplitude, pulse width, duty cycle, and number of consecutive identical pulses; The polarity of the spin-orbit torque current changes alternately over time; or, At least one of the absolute amplitude, pulse width, duty cycle and number of consecutive identical pulses of the spin-orbit torque current decays or grows over time, forming a corresponding oscillating physical field.

6. The physically unclonable function magnetic device according to claim 1, characterized in that: When the reconstructed signal is a magnetic field signal: If the magnetic tunnel junction has perpendicular magnetic anisotropy, the magnetic field intensity of the magnetic field signal in the vertical direction fluctuates; if the magnetic tunnel junction has in-plane magnetic anisotropy, the magnetic field intensity of the magnetic field signal in the plane direction and in the direction of the easy magnetic axis of the magnetic tunnel junction fluctuates; When the reconstructed signal is a spin-orbit torque current; The magnetic tunnel junction has in-plane magnetic anisotropy, and the spin-orbit torque current oscillates along a direction perpendicular to the easy magnetic axis of the magnetic tunnel junction.

7. The physically unclonable function magnetic device according to claim 1, characterized in that: The reconstructed signal includes a spin-orbit moment current and a magnetic field signal; If the magnetic tunnel junction has perpendicular magnetic anisotropy, the magnetic field signal is in a vertical direction, the spin-orbit moment current is along the direction of the spin-orbit moment layer, and the magnetic tunnel junction has an equivalent magnetic field in the same direction as the spin-orbit moment current, at least one type of signal exhibits an oscillating change; If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is perpendicular to the direction of the spin-orbit moment layer, the magnetic field intensity of the magnetic field signal along the easy magnetic axis of the magnetic tunnel junction and the spin-orbit moment current along the direction of the spin-orbit moment layer, at least one of the signals exhibits an oscillatory change; If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer, the magnetic field signal is along the easy magnetic axis of the magnetic tunnel junction, the spin-orbit moment current is along the direction of the spin-orbit moment layer and the magnetic tunnel junction has an equivalent magnetic field in the vertical direction, at least one type of signal exhibits oscillating changes.

8. The physically unclonable function magnetic device according to claim 1, characterized in that: It also includes an auxiliary signal, which is used to enhance or weaken the physical field strength formed by the reconstructed signal.

9. The physically unclonable function magnetic device according to claim 8, characterized in that: The composite reconstruction signal includes an oscillating spin-orbit moment current, and the auxiliary signal is an additional magnetic field signal; If the magnetic tunnel junction has perpendicular magnetic anisotropy, the spin-orbit moment current is along the direction of the spin-orbit moment layer, the magnetic field signal is along the direction of the spin-orbit moment layer, and at least one type of signal exhibits an oscillating change; If the magnetic tunnel junction has in-plane magnetic anisotropy and the easy magnetic axis of the magnetic tunnel junction is parallel to the direction of the spin-orbit moment layer, the magnetic field signal is along the vertical direction, the spin-orbit moment current is along the direction of the spin-orbit moment layer, and at least one type of signal shows an oscillating change.

10. An application method of a physically unclonable function magnetic device, characterized in that: The physical unclonable function magnetic device includes a plurality of magnetic storage units arranged in an array, wherein the magnetic storage unit includes a spin-orbit moment layer and at least one magnetic tunnel junction provided on the spin-orbit moment layer; The method comprises: An oscillating composite reconstruction signal is applied to the magnetic storage unit, forming a superimposed oscillating physical field at the magnetic storage unit to cause the resistance state of the magnetic tunnel junction to oscillate, thereby realizing PUF reconstruction of multiple magnetic storage units arranged in an array.

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