A polyimide-based high-temperature hot-melt metal substrate and a method for manufacturing the same

By combining a polyimide resin layer and porous silicon carbide-boron nitride powder filler on a metal substrate, the problem of insufficient insulation and thermal conductivity of the metal substrate at high temperatures is solved, and stable operation in high-temperature environments is achieved.

CN120547757BActive Publication Date: 2026-04-10SHENZHEN SHENGBAILIN RUBBER PLASTIC ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-05-20
Publication Date
2026-04-10

AI Technical Summary

Technical Problem

Existing metal substrates have insufficient insulation performance in high-temperature and high-power scenarios. Traditional insulating materials undergo thermal degradation of their molecular structure at high temperatures, leading to insulation failure, and their thermal conductivity cannot meet the heat dissipation requirements of electronic devices.

Method used

A polyimide resin layer is bonded to a metal substrate and doped with porous silicon carbide-boron nitride powder filler. The interfacial bonding is strengthened by chemical bonding, thereby improving insulation, thermal conductivity and high temperature resistance.

Benefits of technology

The polyimide resin layer provides excellent insulation and high-temperature resistance, while the porous silicon carbide-boron nitride powder filler improves thermal conductivity and mechanical properties, ensuring stable operation of electronic equipment in high-temperature environments.

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Abstract

The application discloses a polyimide-based high-temperature hot-melt metal substrate and a preparation method thereof, belongs to the patent classification H05K3 / 00, and relates to the technical field of printed circuit boards. The polyimide-based high-temperature hot-melt metal substrate comprises an upper polyimide substrate, a lower polyimide substrate and a metal substrate body which are sequentially stacked, and heating wires are embedded between the upper polyimide substrate and the lower polyimide substrate. The polyimide resin layer is combined on the metal substrate, so that the insulation performance and high-temperature resistance of the surface of the metal substrate are improved. In addition, porous silicon carbide-boron nitride powder fillers are doped in the polyimide resin, so that the heat conduction performance and high-temperature resistance of the polyimide resin are improved.
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Citation Information

Patent Citations

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