Optoelectronic component

Abstract

The invention relates to an optoelectronic component, comprising: a carrier having an upper side and a lower side; an optoelectronic semiconductor chip which is arranged on the upper side of the carrier and which is designed to emit light having a wavelength in a first wavelength range of the visible spectrum; and a cover disc arranged above the optoelectronic semiconductor chip. The cover disc has a transmittance of at least 80% in the first wavelength range. In a second wavelength range of the visible spectrum, the cover disk has a transmittance of less than 20%.

Description

Technical Field

[0001] The present invention relates to an optoelectronic device. Background Art

[0002] This application claims the priority of German patent application 10 2023 108 185.3, the disclosure content of which is hereby incorporated herein by reference.

[0003] It is known in the prior art to arrange a cover disk over a light-emitting optoelectronic semiconductor chip in light-emitting optoelectronic components. Summary of the Invention

[0004] The object of the present invention is to provide an optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claim. Various developments are described in the dependent claims.

[0005] The optoelectronic component includes a carrier having a top and a bottom; an optoelectronic semiconductor chip arranged on the top of the carrier, the optoelectronic semiconductor chip being configured to emit light having a wavelength in a first wavelength range of the visible spectrum; and a cover disk arranged above the optoelectronic semiconductor chip. The cover disk has a transmittance of at least 80% in the first wavelength range. In a second wavelength range of the visible spectrum, the cover disk has a transmittance of less than 20%.

[0006] Because the cover disk of the optoelectronic component has a transmittance of at least 80% in the first wavelength range in which the optoelectronic semiconductor chip of the optoelectronic component emits, light emitted by the optoelectronic semiconductor chip is advantageously absorbed only to a small extent by the cover disk. As a result, the optoelectronic component can have a high efficiency.

[0007] Because the cover disk has a transmittance of less than 20% in the second wavelength range, light with wavelengths in the second wavelength range that impinges on the optoelectronic component from the outside is mostly absorbed in the cover disk or reflected by the cover disk. Consequently, only a very small amount of light can reach the top side of the carrier, where it is reflected and then emitted again through the cover disk. This ensures that the top side of the carrier and components of the optoelectronic component arranged thereon are essentially invisible from outside the optoelectronic component. In this case, when the optoelectronic component is not in operation, the cover disk of the optoelectronic component can appear essentially black, for example.

[0008] In one embodiment of the optoelectronic component, the cover disk has a transmittance of at least 90%, in particular at least 95%, in the first wavelength range. In the second wavelength range, the cover disk has a transmittance of less than 10%, in particular less than 5%. Advantageously, this results in particularly low absorption of light emitted by the optoelectronic semiconductor chip and thus particularly high efficiency. At the same time, this also results in a particularly high opacity of the cover disk of the optoelectronic component for light having a wavelength in the second wavelength range.

[0009] In one embodiment of the optoelectronic component, the first wavelength range is at a greater wavelength than the second wavelength range. In this case, the cover disk can be designed as a longpass filter, for example. However, other filter properties of the cover disk are also possible.

[0010] In one embodiment of the optoelectronic component, the first wavelength range includes at least a portion of the red spectral range. This allows light emitted by the optoelectronic semiconductor chip in the red spectral range to be emitted from the optoelectronic component through the cover disk with high transmittance.

[0011] In one embodiment of the optoelectronic component, the first wavelength range includes at least a portion of the yellow spectral range. This allows light emitted by the optoelectronic semiconductor chip having a wavelength in the yellow spectral range to be emitted from the optoelectronic component through the cover disk with high transmittance.

[0012] In one embodiment of the optoelectronic component, the cover disk comprises PMMA. Advantageously, the cover layer comprising PMMA can be formed with material additives having the desired filter properties. At the same time, the cover disk made of PMMA can be manufactured cost-effectively and has favorable mechanical properties and high durability.

[0013] In one embodiment of the optoelectronic component, the cover disk is doped with a rare earth metal, in particular neodymium. Rare earth metals advantageously have characteristic absorption and transmission spectra. By doping the cover disk with a corresponding metal, the cover disk can be provided with similar filtering properties.

[0014] In one embodiment of the optoelectronic component, a filter structure, in particular an interference filter structure, formed as a layer sequence is provided on the surface of the cover disk. Advantageously, such an interference filter structure can be formed with precisely predeterminable transmission characteristics. This makes it possible to form a cover disk with predeterminable transmission characteristics.

[0015] In one embodiment of the optoelectronic component, the filter structure is designed as a bandpass filter, in particular as a multi-bandpass filter. Thus, the cover disk can be designed such that it allows light with wavelengths in a plurality of different wavelength ranges to pass through with high transmittance, while light with wavelengths in another wavelength range cannot pass through the cover disk.

[0016] In one embodiment of the optoelectronic component, an adhesive layer is provided between the top side of the carrier and the cover disk. The optoelectronic semiconductor chip can be embedded in the adhesive layer. Advantageously, this enables a simple, cost-effective, and robust connection of the cover disk to the carrier.

[0017] In one embodiment of the optoelectronic component, a light-absorbing mask is provided on the surface of the cover disk facing the carrier. This allows non-light-emitting regions of the upper side of the carrier to be masked, making them largely or completely invisible from outside the optoelectronic component.

[0018] In one embodiment of the optoelectronic component, the mask covers an edge region of the carrier. This makes it possible, for example, to arrange electrical contacts or other components of the optoelectronic component in the edge region of the carrier without these being visible from outside the optoelectronic component.

[0019] In one embodiment of the optoelectronic component, the mask has an opening. The mask has a reduced thickness in the edge region surrounding the opening. This advantageously results in a smooth transition between the mask and the opening, allowing the cover disk to be connected to the carrier in a particularly robust and uniform manner.

[0020] In one embodiment of the optoelectronic component, the carrier is formed as a plastic film, in particular as a PET film. Advantageously, the carrier can thus have a particularly low thickness, which enables the entire optoelectronic component to be formed with a low thickness.

[0021] In one embodiment of the optoelectronic component, a light-absorbing layer is provided on the underside of the carrier. Advantageously, light that propagates from outside the optoelectronic component through the cover disk to the carrier is absorbed by the light-absorbing layer on the underside of the carrier, thereby preventing the light from being able to escape through the cover disk again into the environment surrounding the optoelectronic component after reflection. This ensures that the carrier is essentially invisible from outside the optoelectronic component.

[0022] In one embodiment of the optoelectronic component, at least one conductor track is arranged on the top side of the carrier. The conductor track is painted black. Advantageously, this ensures that light from outside the optoelectronic component, passing through the cover disk and reaching the carrier, is absorbed by the blackened conductor track and is reflected only slightly by the conductor track. This ensures that the conductor track arranged on the top side of the carrier is essentially invisible from outside the optoelectronic component. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The characteristics, features, and advantages of the present invention described above, as well as the manner and method of achieving these characteristics, features, and advantages, become clearer and more easily understood in conjunction with the following description of exemplary embodiments, which are explained in detail in conjunction with the accompanying drawings. The following schematic diagrams illustrate:

[0024] Figure 1 shows a cut-away side view of an optoelectronic component having a carrier and a cover disk;

[0025] Figure 2 showing a first filtering characteristic of the cover disk;

[0026] Figure 3 showing a second filtering characteristic of the cover disk;

[0027] Figure 4 A variant of an optoelectronic component having a mask arranged on a cover disk is shown;

[0028] Figure 5 showing details of the openings of the mask;

[0029] Figure 6 A variant of an optoelectronic component having a filter structure arranged on the surface of a cover disk is shown; and

[0030] Figure 7 Another filtering characteristic of the cover disk is shown. DETAILED DESCRIPTION

[0031] Figure 1 A schematic, cut-away side view of an optoelectronic component 10 is shown. The optoelectronic component 10 is configured to emit visible light. The optoelectronic component 10 can be used, for example, in a motor vehicle, for example as a taillight, a flashlight, or a combined taillight and flashlight. The optoelectronic component 10 can also be used in the interior of a motor vehicle, for example as a display device. The optoelectronic component 10 can also be used as a display device in other environments, for example, as a display device in a household appliance.

[0032] The optoelectronic component 10 comprises a carrier 100 having a top 101 and a bottom 102 opposite the top 101. The carrier 100 may be formed as a film, for example, and may comprise a plastic such as PET. The carrier 100 may be mechanically flexible, in particular bendable.

[0033] In the example shown, a plurality of optoelectronic semiconductor chips 200 are arranged on the top 101 of the carrier 100. The optoelectronic semiconductor chips 200 are designed to emit visible light. The light is initially emitted in a direction oriented perpendicularly to the top 101 of the carrier 100. For example, the light may be emitted in a Lambertian distribution about a direction oriented perpendicularly to the top 101 of the carrier 100. The optoelectronic semiconductor chips 200 may be designed, for example, as light-emitting diode chips (LED chips).

[0034] The optoelectronic component 10 comprises a cover disk 300 arranged above the top 101 of the carrier 100 and above the optoelectronic semiconductor chip 200, the cover disk having a first surface 301 and a second surface 302 opposite the first surface 301. The second surface 302 of the cover disk 300 faces the top 101 of the carrier 100. The first surface 301 of the cover disk 300 forms the outer side of the optoelectronic component 10.

[0035] The carrier 100 and the cover disk 300 can be connected to each other by lamination, for example, using OCA or PVB. In this case, an adhesive layer 170 can be present between the top 101 of the carrier 100 and the second surface 302 of the cover disk 300. The optoelectronic semiconductor chip 200 can be embedded in the adhesive layer 170. However, it is also possible for the carrier 100 and the cover disk 300 to be arranged in direct contact with each other.

[0036] The cover disk 300 can comprise PMMA or PVC, for example.

[0037] The cover disc 300 is partially transparent to visible light. Figure 2 The schematic diagram shows an exemplary first filter characteristic 500 of a cover disk 300. Here, the wavelength 600 of the light is plotted on the horizontal axis with values ​​increasing toward the right. The visible spectrum 630 of the light is shown. The transmittance 700 is plotted on the vertical axis with values ​​increasing upward.

[0038] The optoelectronic semiconductor chip 200 of the optoelectronic component 10 is designed to emit light having a wavelength in the first wavelength range 610. The first filter characteristic 500 of the cover disk 300 is designed such that the cover disk 300 has a high transmittance 700 of at least 80% in the first wavelength range 610. The transmittance 700 of the cover disk 300 in the first wavelength range 610 can be even at least 90% or even at least 95%.

[0039] The cover disc 300 has a low transmittance 700 of less than 20% in the second wavelength range 620 of the visible spectrum 630. The transmittance 700 of the cover disc 300 in the second wavelength range 620 may even be less than 10% or even less than 5%.

[0040] exist Figure 2 The exemplary first filter characteristic 500 shown in FIG is a long-pass filter characteristic. Here, the first wavelength range 610 is located at a greater wavelength than the second wavelength range 620. A transition region exists between the first wavelength range 610 and the second wavelength range 620, in which the transmittance 700 lies between the high transmittance 700 of the first wavelength range 610 and the low transmittance 700 of the second wavelength range 620. It is advantageous for the transition region to be as narrow as possible, i.e., for the transition in transmittance 700 to extend steeply. It is also advantageous for the second wavelength range 620 to cover as large a portion of the visible spectrum 630 as possible, i.e., for the first wavelength range 610 and the transition region between the first wavelength range 610 and the second wavelength range 620 to be as narrow as possible.

[0041] exist Figure 1 In the example shown in FIG, the optoelectronic semiconductor chips 200 are divided into a first group 210 and a second group 220. The optoelectronic semiconductor chips 200 of the first group 210 are designed to emit light 215 having a wavelength in a first spectral range 640. The first spectral range 640 may be, for example, a red spectral range. The optoelectronic semiconductor chips 200 of the second group 220 are designed to emit light 225 having a wavelength in a second spectral range 650. The second spectral range 650 may be, for example, a yellow or orange spectral range.

[0042] exist Figure 2 In the exemplary first filter characteristic 500, the first wavelength range 610 completely or at least partially includes the first spectral range 640 and the second spectral range 650. This means that the light 215 emitted by the optoelectronic semiconductor chips 200 of the first group 210 and the light 225 emitted by the optoelectronic semiconductor chips 200 of the second group 220 can each pass through the cover disk 300 with a high transmittance 700.

[0043] If the optoelectronic component 10 is used in an exterior area of ​​a motor vehicle, the optoelectronic semiconductor chips 200 of the first group 210 can be used, for example, to implement a taillight and / or brakelight function. The optoelectronic semiconductor chips 200 of the second group 220 can be used, for example, to implement a flashlight function.

[0044] Light with wavelengths in the second wavelength range 620 that impinges from the outside on the first surface 301 of the cover disk 300 of the optoelectronic component 10 can pass through the cover disk 300 only with a low transmittance 700, i.e., is mostly reflected by or absorbed in the cover disk 300. Consequently, only a small portion of this light can also be reflected by the carrier 100 or components arranged on the carrier 100 and pass through the cover disk 300 again to exit the optoelectronic component 10. This means that when the optoelectronic semiconductor chips 200 of the optoelectronic component 10 do not emit light, the carrier 100 and the components of the optoelectronic component 10 arranged on the carrier 100 are barely visible or not visible from outside the optoelectronic component 10 through the cover disk 300, and the cover disk 300 appears essentially black from the outside. This can be referred to as the black panel effect.

[0045] To further reduce reflections of externally incident light on carrier 100, conductor tracks 120 arranged on top 101 or bottom 102 of carrier 100 may be black-coated. For this purpose, conductor tracks 120 may have a coating with Ti, SiN, or another material, for example.

[0046] To further reduce reflections of light incident on the optoelectronic component 10 from the outside at the carrier 100, a light-absorbing layer 150 can be provided on the underside 102 of the carrier 100. The light-absorbing layer 150 can be formed, for example, by a black lacquer or a black plastic layer. The black plastic layer can be applied, for example, by a hot melt adhesive method or by lamination. It is also possible for the carrier 100 itself to consist of a black, absorbent material.

[0047] In order to reduce reflections at the interface, it is expedient for the materials of the cover disk 300 , the adhesive layer 170 , the carrier 100 and the light-absorbing layer 150 to each have refractive indices that are as similar as possible.

[0048] The cover disk 300 can have a thickness of, for example, between 1 mm and 4 mm. The carrier 100 can have a thickness of, for example, less than 300 μm or even less than 100 μm. The adhesive layer 170 and the light-absorbing layer 150 can also be very thin. This allows the entire optoelectronic component 10 to have an extremely low thickness. The optoelectronic component 10 does not necessarily have to have a flat shape. Curved shapes are also possible. For example, the shape of the optoelectronic component 10 can be predetermined by the shape of the cover disk 300. A flexible carrier 100 can also be attached to a curved cover disk 300.

[0049] The cover disk 300 of the optoelectronic component 10 may also have the same Figure 2The first filter characteristic 500 shown by way of example in FIG. For example, the first wavelength range 610 in which the cover disk 300 has a high transmittance 700 may include the blue spectral range, the green spectral range, or another spectral range of the visible spectrum 630. In this case, the second wavelength range 620 in which the cover disk 300 has a low transmittance 700 may include all other ranges of the visible spectrum 630. In each case, the optoelectronic semiconductor chip 200 of the optoelectronic component 10 should be designed such that it emits light in the first wavelength range 610 in which the cover disk 300 has a high transmittance 700.

[0050] The filtering properties of the cover disc 300 can be determined, for example, by the coloring of the material of the cover disc 300. The transmittance 700 of the cover disc 300 is also influenced by the thickness of the cover disc 300.

[0051] Figure 3 A schematic diagram of a second filter characteristic 510 is shown. The wavelength 600 is again plotted on the horizontal axis with values ​​increasing towards the right. The transmittance 700 is plotted on the horizontal axis with values ​​increasing upwards.

[0052] exist Figure 3 The second filter characteristic 510 shown in FIG. 1 is derived from the absorption spectrum of a rare earth metal, in the example shown, from the absorption spectrum of neodymium. It can be seen that the second filter characteristic 510 has a high transmittance 700 in some regions of wavelength 600, while it has a low transmittance 700 in other regions of wavelength 600. Regions with high transmittance 700 may form the first wavelength range 610. Regions with low transmittance 700 may form the second wavelength range 620.

[0053] If the cover disk 300 is made of a material with neutral filter properties and the material is doped with a rare earth metal, for example neodymium, the cover disk 300 has a Figure 3 The second filter characteristic 510 is shown in FIG. It is also possible to have a cover disk 300 with a filter characteristic different from the neutral filter characteristic, for example Figure 2 The cover disk 300 having the first filter characteristic 500 is additionally doped with a rare earth metal. In this case, the filter characteristic of the undoped cover disk 300 and the filter characteristic resulting from the doping are combined with one another.

[0054] Figure 4 A schematic, cut-away side view of another variant of an optoelectronic component 10 is shown. Figure 4 The variant of the optoelectronic device 10 shown in FIG. Figure 1 The variants of the optoelectronic device 10 shown in FIG. 1 have a large consistency. Only the variants of the optoelectronic device 10 shown in FIG. 1 are described below. Figure 4 The variant shown in Figure 1In addition, the above description also applies to Figure 4 's variant.

[0055] exist Figure 4 In the optoelectronic component 10 shown in FIG, a light-absorbing mask 400 is provided on the second surface 302 of the cover disk 300 facing the carrier 100. The mask 400 can be made of lacquer, for example. The mask 400 has openings 410 through which light emitted by the optoelectronic semiconductor chips 200 can pass. Advantageously, all optoelectronic semiconductor chips 200 of the optoelectronic component 10 are arranged so that light emitted by the optoelectronic semiconductor chips 200 can pass through the openings 410 of the mask 400. The mask 400 masks the areas next to the openings 410. This means that light incident on the optoelectronic component 10 from the outside is absorbed by the mask 400 in these areas and thus cannot reach the carrier 100. Consequently, the areas of the carrier 100 masked by the mask 400 are not visible from outside the optoelectronic component 10.

[0056] For example, the mask 400 and the openings 410 of the mask 400 can be designed such that the mask 400 masks the edge region 110 of the top 101 of the carrier 100. For example, electrical connections, such as plug connectors, of the optoelectronic component 10 can be arranged in the edge region 110 of the carrier 100. These electrical connections are not visible from the outside through the mask 400.

[0057] Figure 4 A schematically cut-away side view of a portion of the optoelectronic component 10 in the edge region 415 of the opening 410 of the mask 400 is shown. It can be seen that the thickness 420 of the mask 400, measured in a direction perpendicular to the second surface 302 of the cover disk 300, decreases with a smooth transition towards the opening 410 of the mask 400. As a result, the mask 400 has a thickness 420 that is reduced in the edge region 415 around the opening 410 compared to other sections of the mask 400. The smooth transition facilitates the fastening of the carrier 100 to the second surface 302 of the cover disk 300 and to the mask 400 arranged there by means of lamination. However, the mask 400 does not necessarily have to be designed with a thickness 420 at the edge region 415 around the opening 410. Figure 5 The smooth transition is shown in FIG.

[0058] Figure 6 A schematic, cut-away side view of another variant of an optoelectronic component 10 is shown. Figure 6 The variant shown in Figure 1 and Figure 4 The variants of have great consistency. Figure 6 The variant of the optoelectronic device 10 shown in FIG. 1 is different from the variant of the optoelectronic device 10 described above. In addition, the above description also applies to the variant of the optoelectronic device 10 in FIG. Figure 6 The variant shown in .

[0059] exist Figure 6 In the variant of the optoelectronic device 10 shown in FIG, the cover disk 300 has a Figure 7 The third filter characteristic 520 is schematically shown in FIG. Figure 7 6. The wavelength 600 is again plotted on the horizontal axis with increasing values ​​towards the right. The visible spectrum of light 630 is shown. The transmittance 700 is plotted on the vertical axis.

[0060] The third filter characteristic 520 is a multi-bandpass filter characteristic. The third filter characteristic 520 has a high transmittance 700 in a first spectral range 640, which may be, for example, the red spectral range; in a third spectral range 660, which may be, for example, the green spectral range; and in a fourth spectral range 670, which may be, for example, the blue spectral range. Thus, the first spectral range 640, the third spectral range 660, and the fourth spectral range 670 together form a first wavelength range 610, within which the cover disk 300 has a transmittance 700 of at least 80%, but may also have a transmittance of at least 90% or at least 95%. Excluding the transition region, the remaining region of the visible spectrum together forms a second wavelength range 620, within which the cover disk 300 has a transmittance 700 of less than 20%, and in some variations, even less than 10% or less than 5%.

[0061] exist Figure 6 , the optoelectronic semiconductor chips 200 are divided into a first group 210, a third group 230, and a fourth group 240. The optoelectronic semiconductor chips 200 of the first group 210 are designed to emit light 215 having a wavelength in a first spectral range 640. The optoelectronic semiconductor chips 200 of the third group 230 are designed to emit light 235 having a wavelength in a third spectral range 660. The optoelectronic semiconductor chips 200 of the fourth group 240 are designed to emit light 245 having a wavelength in a fourth spectral range 670.

[0062] By this, in Figure 6 In the optoelectronic component 10 of FIG. 1 , light 215 emitted by the optoelectronic semiconductor chips 200 of the first group 210, light 235 emitted by the optoelectronic semiconductor chips 200 of the third group 230, and light 245 emitted by the optoelectronic semiconductor chips 200 of the fourth group 240 can each pass through the cover disk 300 with a high transmittance 700. However, light having a wavelength in the second wavelength range 620 that impinges on the cover disk 300 of the optoelectronic component 10 from the outside cannot pass through the cover disk 300, or can only pass through it in small amounts, because it is absorbed or reflected by the cover disk 300.

[0063] In order to achieve Figure 7 , the cover disk 300 has a filter structure 310 on its first surface 301. The filter structure 310 can alternatively be arranged on the second surface 302 of the cover disk 300. It is also feasible to provide the filter structure 310 on both surfaces 301, 302 of the cover disk 300.

[0064] The filter structure 310 can be formed, for example, as a layer sequence and can form, for example, an interference filter structure. In this case, the filter structure 310 is realized by means of constructive interference and destructive interference. Figure 7 The third filter characteristic 520 is shown in FIG.

[0065] exist Figure 6 In the variant of the optoelectronic component 10 shown in FIG, the rest of the cover disk 300 can have neutral filter properties. This means that the cover disk 300 without the filter structure 310 has approximately the same transmittance 700 in all regions of the visible spectrum 630. However, it is of course also possible to form the cover disk 300 without the filter structure 310 with other filter properties, for example, with Figure 2 The first filter characteristic 500 is shown in FIG. By additionally providing the filter structure 310 , the filter characteristic of the cover disk 300 without the filter structure 310 is then combined with the filter characteristic of the filter structure 310 .

[0066] The filter structure 310 can also be configured with Figure 7 5. The filter structure 310 may be configured as a single-bandpass filter structure that only allows light in a continuous wavelength range to pass through with high transmittance 700, or as a dual-bandpass filter or a quad-bandpass filter. In each case, the filter characteristics of the cover disk 300 should be coordinated with the emission spectrum of the optoelectronic semiconductor chip 200 of the optoelectronic component 10 so that light emitted by the optoelectronic semiconductor chip 200 can pass through the cover disk 300 with high transmittance 700.

[0067] exist Figure 6 In the variant of the optoelectronic component 10 shown in , the mask 400 can be omitted.

[0068] In another variant of the optoelectronic component 10, the cover disk 300 has different lateral sections with different filter properties. Thus, for example, a section of the cover disk 300 that only allows light 215 emitted by the optoelectronic semiconductor chips 200 of the first group 210 to pass with high transmittance 700 may be provided above the optoelectronic semiconductor chips 200 of the first group 210. A section of the cover disk 300 that only allows light 225 emitted by the optoelectronic semiconductor chips 200 of the second group 220 to pass with high transmittance 700 may be provided above the optoelectronic semiconductor chips 200 of the second group 220.

[0069] In another variant of the optoelectronic component 10, at least one optoelectronic semiconductor chip 200 is designed to emit light having a white light color. To this end, the optoelectronic semiconductor chip 200 can, for example, have a conversion element that partially converts light generated by the optoelectronic semiconductor chip 200 and having a wavelength in the blue spectral range into a spectral range with a longer wavelength.

[0070] The present invention has been described and illustrated in detail based on preferred embodiments. However, the present invention is not limited to the disclosed examples. Other variations can be derived by those skilled in the art.

[0071] Reference Signs List

[0072] 10Optoelectronic devices

[0073] 100 vectors

[0074] 101 upper side

[0075] 102 lower side

[0076] 110 marginal areas

[0077] 120 printed conductors

[0078] 150 light absorption layer

[0079] 170 adhesive layer

[0080] 200 optoelectronic semiconductor chips

[0081] 210 Group 1

[0082] 215 Light in the first spectral range

[0083] 220 Group 2

[0084] 225 Light in the Second Spectral Range

[0085] 230 Group 3

[0086] 235 Light in the Third Spectral Range

[0087] 240 Group 4

[0088] 245 Light in the Fourth Spectral Range

[0089] 300 cover plate

[0090] 301 first surface

[0091] 302 second surface

[0092] 310 filter structure

[0093] 400 masks

[0094] 410 opening

[0095] 415 marginal area

[0096] 420 thickness

[0097] 500 first filter characteristics

[0098] 510 Second filter characteristics

[0099] 520 Third Filter Characteristics

[0100] 600 wavelength

[0101] 610 first wavelength range

[0102] 620 second wavelength range

[0103] 630 visible spectrum

[0104] 640 first spectral range

[0105] 650 second spectral range

[0106] 660 third spectrum range

[0107] 670 Fourth Spectral Range

[0108] 700 transmittance

Claims

1. An optoelectronic device (10), A carrier (100) having an upper side (101) and a lower side (102), An optoelectronic semiconductor chip (200) is arranged on the upper side (101) of the carrier (100), the optoelectronic semiconductor chip being designed to emit light having a wavelength in a first wavelength range (610) of the visible spectrum (630), and having a cover disk (300) arranged above the optoelectronic semiconductor chip (200), wherein the cover disk (300) has a transmittance (700) of at least 80% in the first wavelength range (610), The cover disk (300) has a transmittance (700) of less than 20% in a second wavelength range (620) of the visible spectrum (630).

2. The optoelectronic device (10) according to claim 1, wherein the cover disk (300) has a transmittance (700) of at least 90%, in particular a transmittance (700) of at least 95%, in the first wavelength range (610), The cover disk (300) has a transmittance (700) of less than 10%, in particular a transmittance (700) of less than 5%, in the second wavelength range (620).

3. The optoelectronic component (10) according to claim 1, Wherein the first wavelength range (610) is at a larger wavelength than the second wavelength range (620).

4. The optoelectronic device (10) according to claim 3, The cover disk (300) is configured as a long-pass filter.

5. The optoelectronic component (10) according to any one of the preceding claims, The first wavelength range (610) includes at least a portion of the red spectral range.

6. The optoelectronic component (10) according to any one of the preceding claims, The first wavelength range (610) includes at least a portion of the yellow spectral range.

7. The optoelectronic component (10) according to any one of the preceding claims, The cover layer (300) comprises PMMA.

8. The optoelectronic component (10) according to any one of the preceding claims, The cover disk (300) is doped with a rare earth metal, in particular with neodymium.

9. The optoelectronic component (10) according to claim 1, A filter structure (310), in particular an interference filter structure, is provided on a surface (301, 302) of the cover disk (300), which is formed as a layer sequence.

10. The optoelectronic device (10) according to claim 9, The filter structure (310) is designed as a bandpass filter, in particular as a multi-bandpass filter.

11. The optoelectronic component (10) according to claim 1, An adhesive layer (170) is provided between the upper side (101) of the carrier (100) and the cover disk (300).

12. The optoelectronic component (10) according to claim 1, A light-absorbing mask (400) is provided on a surface (302) of the cover disk (300) facing the carrier (100).

13. The optoelectronic device (10) according to claim 12, The mask (400) masks an edge region (110) of the carrier (100).

14. The optoelectronic device (10) according to any one of claims 12 and 13, The mask (400) has an opening (410), wherein the mask (400) has a reduced thickness (420) in an edge region (415) surrounding the opening (410).

15. The optoelectronic component (10) according to any one of the preceding claims, The carrier (100) is designed as a plastic film, in particular as a PET film.

16. The optoelectronic component (10) according to any one of the preceding claims, A light absorbing layer (150) is provided on the lower side (102) of the carrier (100).

17. The optoelectronic component (10) according to any one of the preceding claims, wherein at least one conductor track (120) is arranged on the upper side (101) of the carrier (100), The conductor tracks (120) are painted black.

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