An electrode cooling device and an LED chip with a long strip electrode structure

Abstract

The present invention discloses an electrode cooling device and an LED chip with an elongated electrode structure, belonging to the field of semiconductor chip technology. The device comprises a heat sink, a P-type cooling semiconductor, a heat sink, an input component, an N-type cooling semiconductor, a conductive component, and an output component. The N-type cooling semiconductor is mounted on the upper side of the input component, a heat sink is mounted on the right surface of the input component, the output component is mounted on the upper left side of the heat sink, a P-type cooling semiconductor is mounted on the lower side surface of the output component, the conductive component is mounted on the left side of the P-type cooling semiconductor and the N-type cooling semiconductor, and the heat sink is mounted on the left end of the conductive component. The device solves the problem in the prior art that circular electrodes are prone to breakdown and oxidation in high-temperature environments, resulting in easy damage and short service life. The device improves the service life of the LED chip, greatly reduces maintenance and replacement, and reduces the cost of use.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor chips, and in particular to an electrode cooling device and an LED chip with a long strip electrode structure. Background Art

[0002] With the rapid development of LED display technology, Mini LED and even Micro LED with excellent display effects have become a hot topic in industry research.

[0003] However, LED chips are prone to electrostatic discharge (ESD) during production, transportation, and processing. This occurs when static electricity discharges between the two electrodes of an LED chip, causing localized melting of the chip, which in turn can lead to leakage and short circuits. Existing LED chip electrodes are primarily circular in design. During discharge, the current concentrates at the edge of a particular electrode, creating a current crowding effect that makes this area susceptible to melt breakdown. Furthermore, during operation, the electrode holders are exposed to high temperatures due to heat conduction, which can cause oxidation of the holder material, increase resistance at the contact point, and affect electrical conductivity.

[0004] Therefore, how to provide an electrode cooling device and an LED chip with a long strip electrode structure to solve the defects of the existing LED chip structure is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Invention

[0005] To this end, the present invention provides an electrode cooling device and an LED chip with a long strip electrode structure to solve the problems in the prior art of easy damage and short service life caused by the circular electrode being prone to breakdown and easy oxidation in a high temperature environment.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] According to a first aspect of the present invention,

[0008] The present invention discloses an electrode cooling device, comprising:

[0009] The power input component has an N-type cooling semiconductor installed on the upper side, and a heat sink installed on the right surface of the power input component;

[0010] An output power component is mounted on the left side of the upper end of the heat sink, and a P-type cooling semiconductor is mounted on the bottom side surface of the output power component;

[0011] A conductive component is installed at the left end of the P-type cooling semiconductor and the N-type cooling semiconductor;

[0012] a heat absorbing sheet, mounted on the left end of the conductive component;

[0013] A driving block is mounted on the right side surface of the bottom of the power input assembly, and the driving block is arranged below the heat sink;

[0014] The power input assembly and the power output assembly have the same structure. The power input assembly and the power output assembly are L-shaped blocks. Slots are provided on the upper surface of the lower portion of the power input assembly and the upper surface of the top portion of the power output assembly.

[0015] In one possible implementation, the drive block includes at least one usage state, and the right surface of the drive block is an expansion end. In the first usage state, the top of the drive block is heated, the right end of the drive block expands outward and rests against the right end of the placement position, and the front and rear surfaces of the drive block expand simultaneously, and the front and rear surfaces of the drive block rest against the front and rear ends of the placement position.

[0016] In a possible implementation, the driving block further includes a second usage state. In the second usage state, the driving block is placed at room temperature, and the right surface, front surface, and rear surface of the driving block rebound in sequence.

[0017] In a possible implementation, the power input component, the power output component, and the conductive component are made of metal.

[0018] In a possible implementation, the driving block is made of an expansion silicone material.

[0019] According to a second aspect of the present invention,

[0020] The present invention discloses an LED chip with a long strip electrode structure, including an electrode cooling device and further comprising:

[0021] A substrate, an N-type semiconductor layer is mounted on the upper surface thereof, an electrode cooling device is mounted on the upper surface of the substrate, and the electrode cooling device is arranged on the right side of the N-type semiconductor layer;

[0022] A multi-quantum well layer is mounted above the N-type semiconductor layer;

[0023] A P-type semiconductor layer is mounted on the top of the multi-quantum well layer;

[0024] Long strip electrode sheets are arranged in pairs, one of which is installed between the P-type semiconductor layer and the electrode cooling device, and the other of which is installed between the N-type semiconductor layer and the electrode cooling device;

[0025] The long strip electrode sheet comprises:

[0026] The metal plate has two ends at its bottom respectively inserted into the P-type semiconductor layer, the N-type semiconductor layer and the electrode cooling device;

[0027] A plurality of limiting patches are arranged on the front and rear surfaces of the metal plate, and the limiting patches are made of expanded silicone material;

[0028] The mounting block is mounted on one side surface of the metal plate body, and a round hole is opened in the mounting block.

[0029] In a possible implementation, an extension block is provided on the right side surface of the P-type semiconductor layer and the N-type semiconductor layer, a rectangular groove is opened on the upper surface of the extension block, and one end of the long strip electrode sheet is inserted into the rectangular groove.

[0030] In a possible implementation, a cooling device installation groove is opened on the upper surface of the substrate, and the bottom of the electrode cooling device is inserted into the cooling device installation groove.

[0031] In a possible implementation, a power transmission cable is inserted into the circular hole, and the power transmission cable includes:

[0032] a metal wire, the end of which is inserted into the circular hole;

[0033] The insulating layer is wrapped around the outside of the metal wire.

[0034] The present invention sets an N-type cooling semiconductor and a P-type cooling semiconductor, connects them through a conductive component, and then uses an input component and an output component to connect the circuit. The combined circuit has the same function as a semiconductor refrigeration plate. Cold air will be released at the conductive component, and the released cold air will cool the electrode, so that long-term use will not cause the electrode temperature to be too high and cause its surface oxidation, thereby avoiding affecting the conductivity of the electrode. The long strip electrode can avoid current breakdown, making the entire chip more durable. High temperature will affect the diffusion of current on the electrode. Through cooling treatment, the current will not flow turbulently, thereby ensuring the stability of the light generated by the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the embodiments or the description of the prior art. Obviously, the drawings described below are merely exemplary, and those skilled in the art can derive other implementation drawings based on the provided drawings without inventive effort.

[0036] The structures, proportions, sizes, etc. illustrated in this specification are intended only to complement the contents disclosed herein and to facilitate understanding and reading by persons familiar with the art. They are not intended to limit the conditions under which the present invention may be implemented and therefore have no substantive technical significance. Any structural modifications, changes in proportions, or adjustments in sizes, without affecting the efficacy and objectives of the present invention, shall still fall within the scope of the technical contents disclosed herein.

[0037] Figure 1 A three-dimensional diagram of the electrode cooling device provided by the present invention;

[0038] Figure 2 A three-dimensional diagram of the driving block provided by the present invention;

[0039] Figure 3 A three-dimensional diagram of the slot provided by the present invention;

[0040] Figure 4 A three-dimensional diagram of an LED chip with a long strip electrode structure provided by the present invention;

[0041] Figure 5 A three-dimensional diagram of the extension block provided by the present invention;

[0042] Figure 6 A three-dimensional diagram of the installation slot for the cooling device provided by the present invention;

[0043] Figure 7 A three-dimensional diagram of the long strip electrode sheet provided by the present invention;

[0044] Figure 8 A three-dimensional diagram of the power transmission cable provided by the present invention;

[0045] In the figure: 1 electrode cooling device; 11 heat absorbing plate; 12 P-type cooling semiconductor; 13 heat sink; 14 power input component; 15 N-type cooling semiconductor; 16 conductive component; 17 power output component; 18 driver block; 19 slot; 2 substrate; 21 cooling device mounting slot; 3 N-type semiconductor layer; 4 multi-quantum well layer; 5 P-type semiconductor layer; 6 long strip electrode sheet; 61 circular hole; 62 mounting block; 63 limiting patch; 64 metal plate; 7 extension block; 71 rectangular slot; 8 transmission cable; 81 metal wire; 82 insulation layer. DETAILED DESCRIPTION

[0046] The following describes the implementation of the present invention using specific embodiments. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. Obviously, the embodiments described are only a portion of the present invention, not all of it. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without inventive effort are intended to fall within the scope of protection of the present invention.

[0047] Please follow Figure 1-Figure 3 Now, an electrode cooling device disclosed in the present invention is described. Figure 1 , including a heat absorption plate 11, a P-type cooling semiconductor 12, a heat sink 13, an input component 14, an N-type cooling semiconductor 15, a conductive component 16 and an output component 17. The N-type cooling semiconductor 15 is installed on the upper side of the input component 14, the heat sink 13 is installed on the right surface of the input component 14, the output component 17 is installed on the left side of the upper end of the heat sink 13, the P-type cooling semiconductor 12 is installed on the bottom side surface of the output component 17, the conductive component 16 is installed on the left end of the P-type cooling semiconductor 12 and the N-type cooling semiconductor 15, and the heat absorption plate 11 is installed on the left end of the conductive component 16.

[0048] When the present invention is in use, the power input component 14 and the power output component 17 are respectively connected to the long strip electrode sheet 6, and then the transmission cable 8 is introduced into the long strip electrode sheet 6. When current flows through the transmission cable 8 and enters the power input component 14, the current enters the N-type cooling semiconductor 15, which will excite the N-type cooling semiconductor 15. The free electrons follow the current and move through the conductive component 16 and enter the P-type cooling semiconductor 12. Under the influence of the Peltier effect, the Peltier effect refers to when a direct current passes through a thermocouple composed of two semiconductor materials with different conductivity (usually an N-type semiconductor and a P-type semiconductor), a temperature difference will be generated at both ends of the thermocouple. The N-type cooling semiconductor 15 absorbs heat due to the loss of electrons, causing a large amount of heat to be absorbed at the end where the electrons flow out. This causes the conductive component 16 to release cold air, which diffuses to the long strip electrode sheet 6 through the heat absorption sheet 11, thereby cooling the long strip electrode sheet 6. The P-type cooling semiconductor 12 acquires free electrons. During this process, it dissipates heat, dissipating heat from one end of the heat sink 13. Since the heat sink 13 is in close contact with the driver block 18, heat conduction causes the driver block 18 to expand. During this expansion, the driver block 18 first approaches the right side of the cooling device mounting slot 21. As the expansion continues, the driver block 18 presses against the right side of the cooling device mounting slot 21, slowly driving the entire electrode cooling device 1 to the left. During this leftward movement, the left end surface of the power-input component 14 gradually presses against the left side of the cooling device mounting slot 21, collaborating with the N-type semiconductor layer 3 and the P-type semiconductor layer 5 to clamp the elongated electrode sheet 6. Furthermore, the sliding structure of the electrode cooling device 1 allows the entire LED chip to accommodate elongated electrode sheets 6 of various lengths. When the N-type cooling semiconductor 15 loses a free electron, it typically does so from its highest energy orbital, meaning the lost electron has a higher energy level. In order to remove this high-energy electron, it is necessary to overcome the attraction between the electron and the nucleus, and this process consumes energy. Ionization refers to the process in which the N-type cooling semiconductor 15 loses electrons and becomes ions. During the ionization process, since it is necessary to overcome the electrostatic attraction between the electron and the nucleus, energy needs to be absorbed. This absorption of energy is usually manifested as the absorption of heat, that is, the ionization process is an endothermic process, and with the realization of the endothermic process, cold air is generated when the free electrons are lost, and the elongated electrode sheet 6 is cooled. The realization of the cooling function can ensure that the elongated electrode sheet 6 will not be too hot and cause oxidation on the surface of the elongated electrode sheet 6, thereby ensuring the power transmission efficiency and power transmission amount.

[0049] Based on the previous embodiment, the driving block 18 includes at least one usage state, and the right surface of the driving block 18 is the expansion end. In the first usage state, the top of the driving block 18 is heated, and the right end of the driving block 18 expands outward and abuts against the right end of the placement position. The front and rear surfaces of the driving block 18 expand at the same time, and the front and rear surfaces of the driving block 18 abut against the front and rear ends of the placement position.

[0050] Based on the previous embodiment, the driving block 18 also includes a second usage state. In the second usage state, the driving block 18 is placed at room temperature, and the right surface, front surface and rear surface of the driving block 18 rebound in sequence.

[0051] Based on the previous embodiment, Figure 2 A driver block 18 is mounted on the bottom right surface of the power-input component 14. The driver block 18 is disposed below the heat sink 13. The heat sink 13 is used to diffuse the heat generated when the P-type cooling semiconductor 12 obtains free electrons. Generally, the heat sink 13 is made of metal, which can conduct and diffuse heat to a great extent. The heat generated is gradually provided to the driver block 18 through the heat conduction of the heat sink 13. As a non-conductive expansion material, the driver block 18 expands outward under the influence of thermal expansion and contraction. During the expansion process, it gradually approaches the right surface of the cooling device mounting groove 2. After approaching and contacting the right surface of the cooling device mounting groove 2, it continues to expand. This continued expansion process pushes the power-input component 14 and the entire electrode cooling device 1 to the left, and then cooperates with the P-type semiconductor layer 5 and the N-type semiconductor layer 3 to complete the clamping.

[0052] Based on the previous embodiment, Figure 3 The power input assembly 14 and the power output assembly 17 have the same structure. The power input assembly 14 and the power output assembly 17 are L-shaped blocks. A slot 19 is provided on the lower upper surface of the power input assembly 14 and the top upper surface of the power output assembly 17. The slot 19 is designed to accommodate one end of the elongated electrode sheet 6. The bottom and right surfaces of the elongated electrode sheet 6 are in contact with the surface of the slot 19. After contact, the elongated electrode sheet 6, the power input assembly 14, and the power output assembly 17 are made of metal, which has good electrical conductivity and is used for the flow of current.

[0053] Building on the previous embodiment, the power input component 14, power output component 17, and conductive component 16 are made of metal. When free electrons from the N-type cooling semiconductor 15 flow through the conductive component 16, they stimulate electrons in the metal material to move. The lost electrons in the conductive component 16 absorb heat, generating cool air at the end of the conductive component 16, which is then diffused through the heat absorbing sheet 11.

[0054] Based on the previous embodiment, the drive block 18 is made of expandable silicone material. Silicone is a material that expands when heated and contracts when cooled. When the heat in the heat sink 13 is transferred to the drive block 18, the drive block 18 expands, thereby advancing the electrode cooling device 1 and clamping the long electrode sheet 6. Silicone is also a non-conductive material. In this way, it will not affect the flow of current through the electrode cooling device 1 and can still complete the advancement of the electrode cooling device 1. Even when no heat is applied to the drive block 18, the drive block 18 will not shrink significantly, and can still ensure that the drive block 18 has an appropriate size to limit the electrode cooling device 1.

[0055] Based on the same inventive concept, the present invention also discloses an LED chip with a long strip electrode structure, such as Figure 4 , including a substrate 2, an N-type semiconductor layer 3, a multi-quantum well layer 4, a P-type semiconductor layer 5 and a long strip electrode piece 6. The N-type semiconductor layer 3 is installed on the upper surface of the substrate 2, and the electrode cooling device 1 is installed on the upper surface of the substrate 2. The electrode cooling device 1 is arranged on the right side of the N-type semiconductor layer 3, the multi-quantum well layer 4 is installed above the N-type semiconductor layer 3, and the P-type semiconductor layer 5 is installed at the upper end of the multi-quantum well layer 4. The long strip electrode pieces 6 are arranged in pairs, one of which is installed between the P-type semiconductor layer 5 and the electrode cooling device 1, and the other long strip electrode piece 6 is installed between the N-type semiconductor layer 3 and the electrode cooling device 1.

[0056] When the present invention is in use, the long strip electrode sheet 6 is inserted into the slot 19 and the rectangular groove 71 respectively, so that the electrode cooling device 1 and the P-type semiconductor layer 5 and the N-type semiconductor layer 3 for light emission form a parallel circuit. When the current flows through the P-type semiconductor layer 5 and the N-type semiconductor layer 3, the N-type semiconductor layer 3 uses a semiconductor material such as silicon (Si) or germanium (Ge) as a substrate and is doped with a pentavalent element such as phosphorus (P), arsenic (As) or antimony (Sb), so that it contains many free electrons. The P-type semiconductor layer 5 is based on a semiconductor material such as silicon (Si) or germanium (Ge). Made of materials doped with elements such as boron (B), aluminum (Al), gallium (Ga), and indium (In), the P-type semiconductor layer 5 generates numerous holes. When current flows, free electrons migrate toward the holes. This loss of energy generates higher energy and flows toward the P-type semiconductor layer 5. This energy is not lost, but instead is converted into other forms of energy and dissipated. This energy difference generates light energy, which is the principle of light generation in semiconductor chips. The multi-quantum well layer 4 is typically formed by alternating the growth of two or more ultra-thin semiconductor single crystal materials with different band gaps. These materials can be semiconductor alloys such as InGaN, GaN, and AlGaN, each with a specific band structure and optical properties. During the fabrication process, these semiconductor materials are stacked alternately in very thin layers (a few to tens of nanometers) to form a periodic multilayer film structure similar to a sandwich. The narrow-bandgap material layers are called well layers, while the wide-bandgap material layers are called barrier layers. Due to the quantum confinement effect, the electrons and holes in the well layers are confined to a specific spatial range, forming a bound potential well. The wide-bandgap barrier layer forms a potential barrier, preventing electrons and holes from escaping, thereby regulating the luminescence properties of the quantum well. Due to the extremely thin thickness of the well layer, the movement of carriers (electrons and holes) within it is restricted, resulting in a long lifetime. This confinement effect allows carriers in the multi-quantum well layer 4 to form excitons, enhancing the interaction between light and matter. Within the multi-quantum well layer 4, carriers can form excitons—complexes of electrons and holes bound to each other by the Coulomb force. The presence of excitons gives the multi-quantum well layer excellent performance in luminescence and photoelectric conversion. The substrate 2 supports circuit components or devices, stabilizes the structure, reduces the effects of mechanical and thermal stress on the circuit, and ensures stable circuit performance.

[0057] Based on the previous embodiment, Figure 5 An extension block 7 is provided on the right side of the P-type semiconductor layer 5 and the N-type semiconductor layer 3. A rectangular groove 71 is formed on the upper surface of the extension block 7. One end of the elongated electrode sheet 6 is inserted into the rectangular groove 71. The extension block 7 is used to introduce current into the P-type semiconductor layer 5 or the N-type semiconductor layer 3, while the rectangular groove 71 is used to mount the elongated electrode sheet 6.

[0058] Based on the previous embodiment, Figure 6 A cooling device mounting groove 21 is formed on the upper surface of the substrate 2, and the bottom of the electrode cooling device 1 is inserted into the cooling device mounting groove 21. In addition to being used to mount the electrode cooling device 1, the cooling device mounting groove 21 can also be used to move the electrode cooling device 1. During the movement of the electrode cooling device 1, the extension block 7 is used to clamp the elongated electrode sheet 6. This movable electrode cooling device 1 can clamp elongated electrode sheets 6 of different lengths.

[0059] Based on the previous embodiment, Figure 7 The long strip electrode sheet 6 includes a circular hole 61, a mounting block 62, a limiting patch 63 and a metal plate body 64. The two ends of the bottom of the metal plate body 64 are respectively inserted into the P-type semiconductor layer 5, the N-type semiconductor layer 3 and the electrode cooling device 1. Several limiting patches 63 are arranged on the front and back surfaces of the metal plate body 64. The limiting patches 63 are made of silicone expansion material. The mounting block 62 is installed on one side surface of the metal plate body 64, and a circular hole 61 is opened in the mounting block 62. The setting of the limiting patch 63 is used to clamp the metal plate 64 in the rectangular groove 71 and the slot 19. The width of the metal plate 64 itself is slightly smaller than the width of the rectangular groove 71 and the slot 19, but after adding the width of the limiting patch 63, the long electrode piece 6 is just clamped in the rectangular groove 71 and the slot 19. Because the metal plate 64 will generate heat when in use, and the heat is transferred to the limiting patch 63 made of silicone expansion material, the limiting patch 63 will expand, which will completely limit the movement of the long electrode piece 6. This setting method can ensure that the brightness of the LED chip remains unchanged even if it shakes during use. Although the existing welding method is firm, the continuous heating of the long electrode piece 6 can easily melt the welding point, which in turn causes the long electrode piece 6 to fall off. The present invention can achieve a longer service life. The design of the long electrode piece 6 helps to form a more uniform electric field distribution inside the semiconductor. Due to the long strip shape of the electrode, the electric field can be distributed more evenly along the length of the electrode, which helps to reduce the unevenness of the electric field and improve the performance stability of the semiconductor device. The long strip electrode sheet 6 has a lower resistance, which helps to reduce the loss of current during transmission. In semiconductor devices, efficient current transmission is crucial to improving the working efficiency and performance of the device. The design of the long strip electrode sheet 6 allows current to pass through the semiconductor material more smoothly, reducing energy loss caused by excessive resistance. And compared to circular electrodes, it can effectively prevent breakdown.

[0060] Based on the previous embodiment, Figure 8A power transmission cable 8 is inserted into circular hole 61. Transmission cable 8 comprises a metal conductor 81 and an insulating layer 82. The end of metal conductor 81 is inserted into circular hole 61, and insulating layer 82 is wrapped around the outside of metal conductor 81. Circular hole 61 is used to connect power transmission cable 8. Metal conductor 81 is used for power transmission, while insulating layer 82 prevents electric shock.

[0061] Although the present invention has been described in detail above using general descriptions and specific embodiments, it will be apparent to those skilled in the art that modifications and improvements may be made thereto. Therefore, such modifications and improvements, without departing from the spirit of the present invention, are intended to be within the scope of protection claimed herein.

Claims

1. An electrode cooling device, characterized in that: include: An electric power component (14) is provided with an N-type cooling semiconductor (15) mounted on the upper side thereof, and a heat sink (13) is mounted on the right surface of the electric power component (14); An output power component (17) is mounted on the left side of the upper end of the heat sink (13), and a P-type cooling semiconductor (12) is mounted on the bottom side surface of the output power component (17); A conductive component (16) is installed at the left end of the P-type cooling semiconductor (12) and the N-type cooling semiconductor (15); A heat absorbing sheet (11) is mounted on the left end of the conductive component (16); A drive block (18) is mounted on the right side surface of the bottom of the power input component (14), and the drive block (18) is arranged below the heat sink (13); The power input assembly (14) and the power output assembly (17) have the same structure. The power input assembly (14) and the power output assembly (17) are L-shaped blocks. A slot (19) is provided on the lower upper surface of the power input assembly (14) and the top upper surface of the power output assembly (17). The driving block (18) includes at least one use state, wherein the right surface of the driving block (18) is an expansion end. In the first use state, the top end of the driving block (18) is heated, the right end of the driving block (18) expands outward and abuts against the right end of the placement position, and the front and rear surfaces of the driving block (18) expand simultaneously, and the front and rear surfaces of the driving block (18) abut against the front and rear ends of the placement position.

2. The electrode cooling device according to claim 1, characterized in that: The driving block (18) also includes a second use state. In the second use state, the driving block (18) is placed at room temperature, and the right surface, the front surface, and the rear surface of the driving block (18) rebound in sequence.

3. The electrode cooling device according to claim 1, characterized in that: The power input component (14), the power output component (17) and the conductive component (16) are made of metal.

4. The electrode cooling device according to claim 1, characterized in that: The driving block (18) is made of a silicone expansion material.

5. An LED chip with a long strip electrode structure, comprising the electrode cooling device according to claim 1, characterized in that: Also includes: A substrate (2) having an N-type semiconductor layer (3) mounted on its upper surface, an electrode cooling device (1) mounted on the upper surface of the substrate (2), and the electrode cooling device (1) arranged on the right side of the N-type semiconductor layer (3); A multi-quantum well layer (4) is installed above the N-type semiconductor layer (3); A P-type semiconductor layer (5) is mounted on the upper end of the multi-quantum well layer (4); Long strip electrode sheets (6) are arranged in pairs, one of which is installed between the P-type semiconductor layer (5) and the electrode cooling device (1), and the other long strip electrode sheet (6) is installed between the N-type semiconductor layer (3) and the electrode cooling device (1); The long strip electrode sheet (6) comprises: The metal plate (64) has two ends at its bottom respectively inserted into the P-type semiconductor layer (5), the N-type semiconductor layer (3) and the electrode cooling device (1); A plurality of limiting patches (63) are arranged on the front and rear surfaces of the metal plate (64), and the limiting patches (63) are made of expanded silicone material; A mounting block (62) is mounted on a side surface of the metal plate body (64), and a circular hole (61) is opened in the mounting block (62).

6. The LED chip with a strip-shaped electrode structure according to claim 5, wherein: An extension block (7) is provided on the right side surface of the P-type semiconductor layer (5) and the N-type semiconductor layer (3), a rectangular groove (71) is provided on the upper surface of the extension block (7), and one end of the long strip electrode sheet (6) is inserted into the rectangular groove (71).

7. The LED chip with a strip-shaped electrode structure according to claim 5, wherein: A cooling device installation groove (21) is provided on the upper surface of the substrate (2), and the bottom of the electrode cooling device (1) is inserted into the cooling device installation groove (21).

8. The LED chip with a strip-shaped electrode structure according to claim 5, wherein: A power transmission cable (8) is inserted into the circular hole (61), and the power transmission cable (8) comprises: a metal wire (81), the end of which is inserted into the circular hole (61); An insulating layer (82) is wrapped around the outside of the metal wire (81).

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