Light-emitting display device

Abstract

Disclosed is a light emitting display device including: a substrate including a first region and a second region; a first light shielding pixel defining film provided in the first region, exposing the first blue light emitting portion, the first green light emitting portion, and the first red light emitting portion, and having a first height; a second light shielding pixel defining film provided in the second region, including a region exposing a second blue light emitting portion, a second green light emitting portion, and a second red light emitting portion, and a light transmitting portion, and having a second height smaller than the first height; and a light emitting element provided on the first blue light emitting portion, the first green light emitting portion, the first red light emitting portion, the second blue light emitting portion, the second green light emitting portion, and the second red light emitting portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2024-0029853, filed on February 29, 2024, which is hereby incorporated by reference as if fully set forth herein. Technical Field

[0003] The present disclosure relates to a display device, and more particularly, to a light-emitting display device including a transistor to improve brightness and reliability. Background Art

[0004] Display devices for displaying images in TVs, monitors, mobile phones, tablet computers, and laptop computers are used in various modes and configurations.

[0005] The display device includes a plurality of pixels to form an image and a plurality of transistors to control the operation of each pixel.

[0006] The display device includes a plurality of pixels and is provided with a plurality of driving and switching elements to drive and control the pixels. The driving and switching elements may include transistors, and transistors are widely used in integrated circuits and pixels.

[0007] Recently, various research and development efforts have been conducted to improve the performance and reliability of transistors. Summary of the Invention

[0008] Accordingly, the present disclosure is directed to a light emitting display device that substantially obviates one or more problems due to limitations and disadvantages of the related art.

[0009] An object of the present disclosure is to provide a light-emitting display device that exhibits improved brightness based on a structural change in a region where a light-emitting portion and a light-transmitting portion are mixed.

[0010] Another object of the present disclosure is to provide a light-emitting display device, which is based on a light-shielding pixel defining film arranged around the light-emitting part of a transistor including an active layer of a high-mobility oxide semiconductor, which can not only block upper light but also block internal scattered light.

[0011] Another object of the present disclosure is to provide a light-emitting display device that is capable of preventing the influence of light from a light-emitting element in a structure including an active layer of a high-mobility oxide semiconductor, and in particular, is capable of preventing differences in the influence on the active layer caused by differences in light wavelength by varying the height of a light-shielding pixel defining film.

[0012] Another object of the present disclosure is to provide a light-emitting display device capable of blocking light generated from an adjacent light-emitting element from being transmitted to a light-transmitting portion based on a light-shielding pixel-defining film provided around the light-transmitting portion.

[0013] Another object of the present disclosure is to provide a light-emitting display device capable of preventing rapid changes in brightness through a gradual thickness change of a light-shielding pixel defining film at a boundary between a light-emitting portion and a light-transmitting portion.

[0014] Another object of the present disclosure is to provide a light-emitting display device that can improve optical reliability, form active patterns with different structures in the same process, reduce the amount of materials such as gases and etchants used throughout the manufacturing process for manufacturing the display device, and reduce the generation of greenhouse gases in the manufacturing process, thereby achieving process optimization.

[0015] Additional advantages, objectives, and features of the present disclosure will be described in part in the following description, and in part will become apparent to those skilled in the art after reviewing the following or may be learned from practice of the present disclosure. The objectives and other advantages of the present disclosure may be realized and achieved through the structures particularly pointed out in the written description and claims and the accompanying drawings.

[0016] According to one embodiment of the present disclosure, a light-emitting display device includes: a substrate, which includes a first area and a second area; a first light-shielding pixel defining film, which is provided in the first area, exposes the first blue light-emitting portion, the first green light-emitting portion and the first red light-emitting portion, and has a first height; a second light-shielding pixel defining film, which is provided in the second area, includes an area exposing the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion and the light-transmitting portion, and includes an area with a second height less than the first height; and a light-emitting element, which is provided on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

[0017] It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this application. The drawings illustrate one or more embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0019] Figure 1 is a schematic plan view showing a light-emitting display device according to one embodiment of the present disclosure;

[0020] Figure 2 is a circuit diagram illustrating a sub-pixel according to one embodiment of the present disclosure;

[0021] Figure 3 yes Figure 1 An enlarged view of region A;

[0022] Figure 4 According to the first embodiment of the present disclosure Figure 3 part of the first region and Figure 3 a cross-sectional view of the second region taken along line II';

[0023] Figure 5 is a cross-sectional view showing a transistor of a sub-pixel according to a first embodiment of the present disclosure;

[0024] Figure 6 is a cross-sectional view showing a light emitting display device according to a second embodiment of the present disclosure; and

[0025] Figure 7 is a cross-sectional view showing a light emitting display device according to a third embodiment of the present disclosure. DETAILED DESCRIPTION

[0026] Hereinafter, preferred embodiments of the present disclosure will be described with reference to the accompanying drawings. In the subsequent description of the present disclosure, if a detailed description of related known steps, elements, functions, techniques, and configurations may unnecessarily obscure the key points of the present disclosure, such detailed descriptions of such steps, elements, functions, techniques, and configurations may be omitted. In addition, the component names used in the subsequent description are selected for clarity of description in the specification and may differ from the component names of the actual product.

[0027] The shapes, sizes, ratios, angles, quantities, etc. shown in the accompanying drawings to describe various example embodiments of the present disclosure are given by way of example only. The present disclosure is not limited to the illustrations in the accompanying drawings. In the present disclosure, terms such as "including", "having", "comprising", etc., may be added unless a term such as "only" is used. The terms used herein are for describing specific aspects and are not intended to limit the present disclosure. As used herein, the term "one" used to describe an element in the singular is intended to include a plurality of elements. Unless the context clearly indicates otherwise, an element described in the singular is intended to include a plurality of elements, and vice versa.

[0028] Even if no explicit description of the error or tolerance range is provided when interpreting a component or a value, the component or value is to be interpreted as including such error or tolerance range.

[0029] In describing various example embodiments of the present disclosure, where terms such as “on,” “above,” “below,” and “beside” are used to describe the positional relationship between two elements, unless “immediately adjacent,” “directly,” or “close to,” is used, at least one intervening element may be present between the two elements. It will be understood that when an element or layer is referred to as being “connected to” or “coupled to” another element or layer, it may be directly connected to or coupled to the other element or layer, or one or more intervening elements or layers may be present.

[0030] When describing various example embodiments of the present disclosure, when terms such as "after," "subsequently," "next," and "before" are used to describe the temporal relationship of two events, another event may occur in between, unless more restrictive terms such as "exactly," "immediately," or "directly" are used.

[0031] When describing various exemplary embodiments of the present disclosure, terms such as "first" and "second" may be used to describe various components. These terms are intended to distinguish identical or similar components from one another and do not limit the components. Accordingly, throughout this specification, unless otherwise specifically stated, within the technical concept of the present disclosure, a "first" component may be the same as a "second" component.

[0032] The features of the various embodiments of the present disclosure may be coupled or combined with each other in part or in whole, and may interoperate with each other and be driven by technology in various ways, as will be fully understood by those skilled in the art. The embodiments of the present disclosure may be implemented independently of each other, or may be implemented together in an interdependent relationship.

[0033] Figure 1 is a schematic plan view illustrating a light-emitting display device according to an embodiment of the present disclosure. Figure 2 is a circuit diagram illustrating a sub-pixel according to an embodiment of the present disclosure.

[0034] refer to Figure 1 and Figure 2 The light-emitting display device 1000 according to an embodiment of the present disclosure may include a display panel DP and a housing (not shown) that accommodates the side portions and the lower portion of the display panel DP. The non-display area NA of the display panel DP may be covered by the housing or by a separate light-shielding film. A printed circuit film and / or a battery may be included between the lower portion of the display panel DP and the housing.

[0035] The display panel DP may include a substrate 110 including a display area AA and a non-display area NA surrounding the display area AA, and a driver connected to the substrate 110. The driver may be integrated into the substrate 110 along with the array configuration provided in the display area AA, or may be connected to the substrate 110 in a COG (Chip on Glass) manner, or may be connected to a printed circuit board in a COF (Chip on Film) manner via a film or connector on the substrate 110. Alternatively, the driver may include both a configuration integrated into the substrate 110 and an external configuration of COG or COF.

[0036] The display area AA is an area where an image is displayed. A plurality of sub-pixels SP are provided in the display area AA of the display panel DP, and an image can be displayed using the plurality of sub-pixels SP. The area other than the display area AA in the display panel DP may be a non-display area NA.

[0037] A non-display area NA may be provided in an edge region surrounding a display area AA displaying an image. At least one driver for driving a plurality of sub-pixels SP may be provided in the non-display area NA. The driver may include an intra-panel gate GIP. The intra-panel gate GIP may be connected to a plurality of gate lines GL in the display area AA and may in turn provide gate voltage signals to the plurality of gate lines GL.

[0038] Various additional elements may be further disposed in the non-display area NA to drive the sub-pixels SP in the display area AA.

[0039] In pixels, such as Figure 2 As shown, at least one sub-pixel SP includes a first transistor T1, a second transistor T2, a storage capacitor Cst, a compensation circuit CC, and a light emitting element ED.

[0040] For example, the first transistor T1 may be a switching transistor, and the second transistor T2 may be a driving transistor.

[0041] A first electrode (e.g., a drain electrode) of the first transistor T1 is electrically connected to the data line DL, and a second electrode (e.g., a source electrode) is electrically connected to the first node N1. A gate electrode of the first transistor T1 is electrically connected to the gate line GL. The first transistor T1 transmits a data signal provided through the data line DL to the first node N1 in response to a scan signal provided through the gate line GL.

[0042] The storage capacitor Cst is electrically connected to the first node N1 and charges a voltage applied to the first node N1.

[0043] The first electrode (e.g., drain electrode) of the second transistor T2 receives a high potential driving voltage (EVDD), and the second electrode (e.g., source electrode) is electrically connected to the first electrode (e.g., anode) of the light-emitting element ED, and the second electrode (e.g., cathode) of the light-emitting element ED is connected to a low potential (EVSS), such as ground. The second transistor T2 can control the amount of driving current flowing through the light-emitting element ED in response to the voltage difference between the gate electrode and the source electrode.

[0044] The semiconductor layer of the first transistor T1 and / or the second transistor T2 may include silicon, such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si), or low-temperature polycrystalline silicon (poly-Si), or may include an oxide semiconductor material.

[0045] The transistor and the display device of the embodiment of the present disclosure include an oxide semiconductor layer in at least one of the transistors formed on the substrate 110 and are therefore advantageously formed at a relatively low temperature compared to other materials, maintain amorphous characteristics, and have high mobility.

[0046] At the same time, the light emitting element ED outputs light corresponding to the driving current. The light emitting element ED can output any one of red light, green light, blue light and white light.

[0047] The light-emitting element ED may include an anode, an intermediate layer disposed on the anode, and a cathode that provides a common voltage. The intermediate layer includes at least one light-emitting layer, and when an electric field is formed between the anode and the cathode, the intermediate layer can be configured to emit light of the same color, such as white light, for each pixel, or can be configured to emit light of a different color, such as red, green, or blue light, for each sub-pixel SP. In addition to the light-emitting layer, the intermediate layer may also include various types of common layers and functional layers to efficiently provide holes and electrons to the light-emitting layer.

[0048] The light emitting element ED may be a front emitting diode or a back emitting diode.

[0049] A compensation circuit CC may be further provided in the sub-pixel SP to compensate for the threshold voltage of the second transistor T2. The compensation circuit CC may include one or more transistors. The compensation circuit CC may include at least one transistor and a capacitor and may be configured in various configurations depending on the compensation method. The sub-pixel SP including the compensation circuit CC may include circuits having various structures with different numbers of transistors and / or capacitors, such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, and 7T2C.

[0050] Among the transistors provided in the sub-pixel, the switching transistor may need to be driven at high speed for fast switching operation. The driving transistor can supply high current to the light emitting element and needs high current output to achieve high brightness expression.

[0051] The non-display area NA may include an intra-panel gate GIP. The intra-panel gate GIP outputs a gate signal to the gate line in response to a gate control signal input from a timing controller, for example. The intra-panel gate GIP may include a plurality of transistors, and the plurality of transistors may be formed in the same process as the transistors of the sub-pixel SP.

[0052] Figure 3 yes Figure 1 Magnified view of area A. Figure 4 In the light-emitting display device according to the first embodiment of the present disclosure Figure 3 part of the first region and Figure 3 A cross-sectional view of the second region along line II'. Figure 5 is a cross-sectional view showing a transistor of a sub-pixel according to the first embodiment of the present disclosure.

[0053] The display panel DP may be provided with a camera or sensor on the lower side of the substrate 110, such as Figure 1 The camera or sensor may overlap with the substrate 110 and may be provided on the lower side of the substrate 110. Figure 1 As shown, area A is included in display area AA.

[0054] refer to Figure 3 , area A includes a first area BA and a second area SA, in which sub-pixels SP1, sub-pixels SP2 and sub-pixels SP3 are regularly arranged with a first setting density, a camera or sensor is provided in the second area SA, and a light-transmitting portion TA is also provided for receiving light from the camera or sensor or transmitting light from above to the camera or sensor, and therefore the sub-pixels SP1, sub-pixels SP2 and sub-pixels SP3 are arranged with a second setting density lower than the first setting density.

[0055] The area A is disposed in the display area AA. The second area SA in which the camera or sensor is disposed may be partially disposed within the display area AA and may include at least one second area. In addition, the first area BA may surround the at least one second area SA.

[0056] More specifically, the first area BA includes a plurality of first pixels P1 as units, each of the first pixels P1 includes sub-pixels SP1, SP2, and SP3 emitting light of different colors, and the first pixels P1 are uniformly disposed without being spaced apart from each other.

[0057] The second area SA includes a plurality of second pixels P2 as units, each second pixel P2 includes a sub-pixel SP1, a sub-pixel SP2, and a sub-pixel SP3 that emit light of different colors, and a portion of the second area SA includes densely arranged second pixels P2, and the rest of the second area SA is left empty and thus acts as a light-transmitting portion TA.

[0058] Each of the first pixel P1 of the first area BA and the second pixel P2 of the second area SA may include a reference pixel in each of the sub-pixel SP1, the sub-pixel SP2, and the sub-pixel SP3. Figure 2 The transistor and light-emitting element ED are described.

[0059] The second pixel P2 is provided with a light transmitting portion TA in the second area SA, and has a second resolution lower than the first resolution of the first pixel P1.

[0060] Here, since the second area SA is provided with second pixels P2 having a lower resolution than the first pixels P1 in the first area BA, and no transistors are provided in the area occupied by the light-transmitting portion TA in the second area SA, the transistor arrangement density per unit area is lower than the transistor arrangement density per unit area of ​​the first area BA. Therefore, in order to have the same luminous characteristics as the first area BA, the transistors in the second area SA have a relatively higher sensitivity than the transistors in the first area BA. For example, the mobility of the transistors in the second area SA is higher than the mobility of the transistors in the first area BA. In addition, to achieve a difference in mobility, the materials of the semiconductor layers of the transistors in the first area BA and the second area SA can be different, or the structures of the transistors can be different, for example.

[0061] At the same time, among the multiple transistors provided in each sub-pixel of the first area BA and the second area SA, different mobility characteristics, different sensing sensitivities, or characteristics capable of grayscale expression may be required. For example, the switching transistor may have a higher mobility than the driving transistor for grayscale expression because a high response speed is required.

[0062] like Figure 3 As shown, the light-emitting display device according to an embodiment of the present disclosure includes a substrate 100 having a first area BA and a second area SA, a plurality of first light-emitting portions EM1 provided in the first area BA, second light-emitting portions EM2 and a light-transmitting portion TA provided in the second area SA and spaced apart from each other, and a pixel-defining film BNK1 surrounding the first light-emitting portions EM1 and a pixel-defining film BNK2 surrounding the second light-emitting portions EM2. The pixel-defining film BNK1 may include a light-shielding pixel-defining film 240A and a transparent pixel-defining film 250. The pixel-defining film BNK2 may include a light-shielding pixel-defining film 240B and a transparent pixel-defining film 250.

[0063] In addition, since the light-transmitting portion TA of the second area SA is not equipped with a transistor, light from the upper portion of the substrate 110 may penetrate to the lower side of the substrate 110, or light may be transmitted from a sensor or camera located on the lower side of the substrate 110 to the upper portion of the substrate 110.

[0064] Among the components of the light-emitting element ED, components for reflecting or shielding light may be omitted from the light-transmitting portion TA. For example, when the light-emitting element ED includes an anode, an intermediate layer, and a cathode, and the anode or cathode is a reflective electrode, the reflective electrode may be removed from the light-transmitting portion TA. In some cases, a portion of the intermediate layer may be removed from the light-transmitting portion TA to increase the transmittance of the light-transmitting portion TA.

[0065] Each of the sub-pixels SP1, SP2, and SP3 in the first area BA and the second area SA may include a pixel-defining film that defines a light-emitting portion EM1 or EM2, through which light is transmitted from the light-emitting element ED. The pixel-defining films BNK1 and BNK2 may include a bank structure and a spacer structure, and the pixel-defining films may surround the light-emitting portion EM1 and EM2 while also opening them. The pixel-defining films may have a matrix shape. The pixel-defining films may be removed from the region corresponding to the light-transmitting portion TA.

[0066] Among the components on the substrate 110 , the light transmitting portion TA may further include a transparent insulating film.

[0067] Meanwhile, the sub-pixels SP1, SP2, and SP3 of the first area BA and the second area SA may further include: Figure 2 The transistors T1 and T2 and the capacitor Cst are shown, as well as the switching transistor, the EM transistor, and the sampling transistor driven by the scan signal and the EM signal (emission control signal) applied from the additional gate line. The active layer of the transistor included in the sub-pixel provided in the second area SA, but not in the sub-pixel provided in the first area BA, may include an oxide semiconductor, polycrystalline silicon, amorphous silicon, etc. The active layers of the switching transistor, the EM transistor, and the sampling transistor having different characteristics may be formed of the same or different materials. In addition, if necessary, the switching transistor, the EM transistor, and the sampling transistor having different characteristics may be configured so that each active layer has the same or different mobility.

[0068] The second area SA includes a light-transmitting portion TA, and for transmission purposes, the light-transmitting portion TA does not include metal transistors. Therefore, the transistors of the second area SA are only provided in the restricted subpixels SP1, SP2, and SP3 of the second pixel P2. The second area SA operates the light-emitting elements using only the transistors provided in the subpixels SP1, SP2, and SP3 of the second pixel P2. Therefore, the luminous intensity of the area corresponding to the second area SA including the light-transmitting portion TA must be adjusted. To prevent a decrease in brightness in the second area SA and to provide the same brightness to the first and second areas BA, the driving current required for the transistors in the second area SA may be greater than the driving current required for the transistors in the first area BA.

[0069] For example, when the arrangement density of transistors in the second area SA is 40% of that in the first area BA, the transistors in the second area SA require more than twice the current intensity of the transistors in the first area SA.

[0070] The light-emitting display device according to an embodiment of the present disclosure described below has a structure of providing a light-shielding pixel defining film around the light-emitting part to prevent internal light generated from the light-emitting part from affecting the transistor below, and a structure of increasing light-emitting efficiency in the second area SA including a sensor or camera.

[0071] For example, the following light emitting display device will be described, wherein Figure 3 Among them, SP1 is a light-emitting element that emits blue light, SP2 is a light-emitting element that emits green light, and SP3 is a light-emitting element that emits red light.

[0072] like Figure 3 and Figure 4 As shown, the light-emitting display device 1000A according to the first embodiment of the present disclosure includes: a substrate 110 including a first area BA and a second area SA, and light-shielding pixel defining films 240A and 240B of different heights in the first area BA and the second area SA.

[0073] That is, the first light-shielding pixel defining film 240A provided in the first area BA exposes the first blue light emitting portion BEM1 , the first green light emitting portion GEM1 , and the first red light emitting portion REM1 , but has a first height H1 .

[0074] The second light-shielding pixel defining film 240B provided in the second area SA exposes the second blue light emitting portion BEM2, the second green light emitting portion GEM2, the second red light emitting portion REM2 and the light transmitting portion TA, and includes an area having a second height H2 and / or a third height H3 less than the first height H1.

[0075] The light emitting element ED is included on each of the first blue light emitting part BEM1, the first green light emitting part GEM1, the first red light emitting part REM1, the second blue light emitting part BEM2, the second green light emitting part GEM2 and the second red light emitting part REM2, and emits light of a corresponding sub-pixel.

[0076] The light-emitting element ED includes a first electrode 210, an intermediate layer 220, and a second electrode 230. Light-shielding pixel-defining films 240A and 240B in the first and second regions BA and SA may be disposed on the first electrode 210 and at least partially overlap the first electrode 210, respectively. The intermediate layer 220 and the second electrode 230 may be disposed on the first electrode 210 exposed from the light-shielding pixel-defining films 240A and 240B. Similarly, the intermediate layer 220 and the second electrode 230 may be at least partially disposed on the light-shielding pixel-defining films 240A and 240B.

[0077] One of the first electrode 210 and the second electrode 230 may include a reflective electrode, and the other may include a transparent electrode or a reflective-transmissive electrode.

[0078] When the first electrode 210 includes a reflective electrode, the first electrode 210 can be used to block light from entering the transistor below it. The first electrode 210 can have a multilayer structure, such as (for example) a stacked structure of aluminum (Al) and titanium (Ti) (Ti / Al / Ti), a stacked structure of aluminum (Al) and ITO (ITO / Al / ITO), an APC (Ag / Pd / Cu) alloy, a stacked structure of an APC alloy and ITO (ITO / APC / ITO), or a stacked structure of silver (Ag) and molybdenum / titanium alloy (Ag / MoTi), or can include a single-layer structure containing one material selected from silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca) or barium (Ba), or an alloy of two or more materials. For example, the first electrode 210 can have a stacked structure of a first transparent electrode, a reflective electrode, and a second transparent electrode. The second transparent electrode, which is the uppermost electrode of the first electrode 210, can reduce the hole injection barrier at the interface with the dielectric interlayer EL. Here, the first transparent electrode and the second transparent electrode include transparent oxide electrodes such as ITO and IZO.

[0079] The first electrode 210 may serve as an anode.

[0080] The sub-pixels P1_SP in the first region are closely spaced without any light-transmitting portions. This allows the first electrode 210 to prevent light from traveling downward at right angles when emitted from the first blue, green, and red light-emitting portions BEM1, GEM1, and REM1. However, light that is diagonally reflected and directed toward adjacent sub-pixels on the side may affect the transistors below. Therefore, a first light-shielding pixel-defining film 240A having a first height H1 is provided around the periphery of the first blue, green, and red light-emitting portions BEM1, GEM1, and REM1 in the sub-pixels P1_SP in the first region. This effectively prevents light generated by the light-emitting element ED from diagonally transmitting to adjacent sub-pixels surrounding the light-emitting portion of each sub-pixel.

[0081] The transistor of each sub-pixel may include an active layer 151 , a gate electrode 161 overlapping the active layer 151 , and first and second source-drain electrodes 171 and 172 connected to both sides of the active layer 151 . Figure 4 The sub-pixel P1_SP of the first region and the blue sub-pixel P2_SP1 of the second region emitting blue light are shown, and the green sub-pixel P2_SP2 or the red sub-pixel P2_SP3 emitting green light or red light are shown together, and therefore only one transistor is shown for each sub-pixel. Each sub-pixel may include multiple transistors, and the transistors may be used for different applications and may be formed in different layer structures. In addition, Figure 4 The driving transistor is shown as an example. The switching transistor and the EM transistor may have different structures.

[0082] The active layer 151 may include, for example, any one of an oxide semiconductor, crystalline silicon, or amorphous silicon.

[0083] When the active layer 151 is formed of an oxide semiconductor, a crystallization process may be omitted, which has advantages of reducing greenhouse gas and improving yield.

[0084] When the active layer 151 is formed of an oxide semiconductor, the mobility of the active layer 151 and the transistor may be adjusted by adjusting the ratio of metal or metal components combined with oxygen.

[0085] Light generated in the intermediate layer 220 of the light-emitting element ED is emitted radially. Of this light, light emitted in a vertical direction repeatedly reflects between the first electrode 210 and the second electrode 230, ultimately exiting the second electrode 230 and contributing to the luminous efficiency of the light-emitting element ED. Of the light generated in the intermediate layer 220, light emitted in a diagonal direction, rather than a vertical direction, can be transmitted to a sub-pixel adjacent to the sub-pixel in question. At this adjacent sub-pixel, light is emitted through reflection and re-reflection by various reflective devices included in the light-emitting display device. When this transmitted light strikes a transistor located below the light-emitting element ED of the adjacent sub-pixel, a photocurrent is generated in the transistor, thereby affecting the transistor's characteristics.

[0086] For example, the active layer can be used as an oxide semiconductor.

[0087] In addition, the active layer of a transistor that requires high-speed operation among transistors may include an oxide semiconductor having high mobility. When the mobility increases, the band gap of the oxide semiconductor narrows. When the oxide semiconductor has a band gap of about 15 cm 2 / Vs to 50cm 2 While the band gap of oxide semiconductors is approximately 2.8 eV, the high mobility of 100 nm / Vs is achieved. Active layers with such a narrow band gap can exhibit conductivity even in the presence of short-wavelength light, nearly blue. Therefore, when an active layer with such a narrow band gap is used in a transistor, the threshold voltage shifts significantly to a negative value.

[0088] This is obtained from the relationship between the energy band gap and the wavelength in Equation 1 below.

[0089] [Equation 1]

[0090] λ[nm]=hc / Eg (where λ is the wavelength, h is Planck's constant, c is the speed of light, and Eg is the energy band gap)

[0091] According to Equation 1, even blue light with a peak emission wavelength of 440 nm, for example, can generate a photocurrent in the active layer having an energy bandgap of 2.8 eV. This means that when light generated from the light-emitting element ED has a short blue wavelength and is transmitted to the adjacent sub-pixel on the side, the threshold voltage of the transistor located below shifts to a negative value, increasing the off-state current of the transistor.

[0092] According to Equation 1, the energy band gap and the wavelength are inversely proportional to each other.

[0093] This means that when the light radiated to the active layer has a wavelength longer than green light, the effect of causing a change in the characteristics of the active layer is small.

[0094] Meanwhile, in the light-emitting display device according to an embodiment of the present disclosure, the sub-pixels SP of the first region are located near the first blue light emitting portion BEM1, the first green light emitting portion GEM1, and the first red light emitting portion REM1, without a light-transmitting portion. In this case, the blue light emitting portion emits short-wavelength light having an emission peak of, for example, 440 nm, and the short-wavelength light changes the characteristics of the oxide semiconductor layer having high mobility. When light is radiated from the first blue light emitting portion BEM1, it can be directed to sub-pixels in the horizontal, vertical, and diagonal directions. This allows the first region BA to have a first light-shielding pixel defining film 240A having a high first height H1 in all sub-pixels P1_SP, thereby preventing light emitted from the first blue light emitting portion BEM1 from being transmitted to adjacent sub-pixels, regardless of the horizontal, vertical, or diagonal directions in which it is directed.

[0095] The sub-pixels in the second area SA, which includes the sensor or camera, are arranged at a lower density than the sub-pixels in the first area BA. Accordingly, the second blue light-emitting portion BEM2, the second green light-emitting portion GEM2, and the second red light-emitting portion REM2 are each adjacent to other light-emitting portions, but some of them are adjacent to the light-transmitting portion TA. A high current is applied to the second area SA to give the sub-pixels with a lower density a brightness equivalent to that of the first area BA. Furthermore, to achieve this goal, the mobility of the active layer of the transistors in the second area SA can be made relatively higher than the mobility of the active layer of the transistors in the first area BA in response to high-current, high-brightness driving.

[0096] Meanwhile, in the second area SA, the second light-shielding pixel defining film 240B may include a first height portion 240BA exposing the second blue light-emitting portion BEM2, a second height portion 240BB exposing the second green light-emitting portion GEM2 and the second red light-emitting portion REM2, and a third height portion 240BC. The first height portion 240BA has a first height H1, the second height portion 240BB has a second height H2 less than the first height H1, and the third height portion 240BC has a third height H3 less than the second height H2. Since the second light-shielding pixel defining film 240B includes the first to third height portions 240BA, 240BB, and 240BC, it differs from the first light-shielding pixel defining film 240A provided in the first area BA.

[0097] As described above, when the mobility of the active layer formed of an oxide semiconductor is high, the energy band gap is small. In order to prevent the influence on the characteristics of the transistor below when the light from the second blue light emitting portion BEM2 of the second area SA is directed to the adjacent sub-pixel, the periphery of the second blue light emitting portion BEM2 of the second area SA is provided with a second light-shielding pixel defining film 240BA having a high first height H1. In addition, the second green light emitting portion GEM2 and the second red light emitting portion REM2 that are not adjacent to the second blue light emitting portion BEM2 are provided with a second light-shielding pixel defining film 240BB having a relatively low second height H2. This is because, even if green light or red light is generated, it has little effect on the change in the characteristics of the transistor of the adjacent sub-pixel.

[0098] In addition, in addition to the second blue light emitting area BEM2, the second green light emitting area GEM2 and the second red light emitting area REM2, the second area SA is provided with a light transmitting portion TA, and a second light-shielding pixel defining film 240BC having a third height H3 smaller than the second height H2 is provided in an area adjacent to the light transmitting portion TA to increase the aperture ratio of the light transmitting portion TA and increase the light sensitivity of the sensor or camera.

[0099] Meanwhile, the first and second light-shielding pixel defining films 240A and 240B may include an opaque material containing at least one of a color pigment, organic black, or carbon to prevent optical interference between adjacent sub-pixels SP. In some cases, the first and second light-shielding pixel defining films 240A and 240B may include a black pigment in polypropylene, polyimide, or polyamide.

[0100] At the same time, the first and second light-shielding pixel defining films 240A and 240B surrounding the first blue light emitting portion BEM1, the first green light emitting portion GEM1, the first red light emitting portion REM1, the second blue light emitting portion BEM2, the second green light emitting portion GEM2, and the second red light emitting portion REM2 can be partially removed at the location where the light emitting element ED and the transistor T2 are connected. The light emitting element ED and the transistor T2 can be directly connected, for example, between the first source-drain electrode 171 and the first electrode 210 of the light emitting element ED, or can be connected by further providing a connecting electrode 181 between the first drain-source electrode 171 and the first electrode 210 as shown. In any case, since light transmitted to the side is blocked in the area where the first source-drain electrode 171 and the connecting electrode 181 are provided, the light-shielding pixel defining film can be omitted in this area.

[0101] A transparent pixel defining film 250 may be further provided on the first and second light-shielding pixel defining films 240A and 240B provided in the first and second regions BA and SA. The transparent pixel defining film 250 may define a light-emitting portion surrounding each light-emitting portion and protect the first and second light-shielding pixel defining films 240A and 240B. The transparent pixel defining film 250 may be provided below the intermediate layer 220 and the second electrode 230.

[0102] The transparent pixel defining film 250 may include an inorganic material or an organic material, and may include, for example, polypropylene, polyimide, polyamide, silicon oxide, silicon nitride, or the like.

[0103] In a light-emitting display device according to an embodiment of the present disclosure, the surface area of ​​each light-emitting element in the second area SA can be increased compared to the first area BA, thereby improving the luminous efficiency of the second area SA. To this end, the light-emitting elements ED in the second area SA can have grooves 131R on the upper surface of the second planarization film 131 to increase the surface area of ​​the first electrode 210A of the light-emitting element ED, including the reflective electrode, and improve the reflection efficiency and luminous efficiency.

[0104] Because the second area SA must be able to display colors in the second area SA using sub-pixels having a lower resolution and arrangement density than the first area BA, the second blue light emitting portion BEM2, the second green light emitting portion GEM2, and the second red light emitting portion REM2 all have grooves 131R. The light-emitting element ED of the second area SA can be disposed in the grooves 131R. The first electrode 210A disposed on the grooves 131R and exposed from the second light-shielding pixel defining film 240B in the second area SA has a wider surface area than the first electrode 210 exposed from the first light-shielding pixel defining film 240A in the first area BA.

[0105] Therefore, the surface areas of the second blue light emitting portion BEM2, the second green light emitting portion GEM2, and the second red light emitting portion REM2 disposed on the groove 131R may be wider than the surface areas of the first blue light emitting portion BEM1, the first green light emitting portion GEM1, and the first red light emitting portion REM1 on the second planarization film 131.

[0106] In the light-emitting display device according to an embodiment of the present disclosure, the groove 131R may not overlap with the second light-shielding pixel defining film 240B. Accordingly, the effects of increased reflection efficiency and increased luminous efficiency obtained by the structure of the groove 131R are not limited by the second light-shielding pixel defining film 240B.

[0107] In the light-emitting display device according to one embodiment of the present disclosure, a groove 131R may be provided in each of the light-emitting portions BEM2, GEM2, and REM2 of the second area SA, so that a surface area of ​​the second blue light-emitting portion BEM2 may be larger than a surface area of ​​the first blue light-emitting portion BEM1, a surface area of ​​the second green light-emitting portion GEM2 may be larger than a surface area of ​​the first green light-emitting portion GEM1, and a surface area of ​​the second red light-emitting portion REM2 may be larger than a surface area of ​​the first red light-emitting portion REM1.

[0108] The intermediate layer 220 of the light-emitting element ED may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The intermediate layer 220 may be formed by a plurality of stacks including a hole transport layer, a light-emitting layer, and an electron transport layer, and may be formed in a series structure including a charge generation layer between the stacks. The charge generation layer may include, for example, an n-type charge generation layer and a p-type charge generation layer.

[0109] The light-emitting layers included in the intermediate layer 220 may differ for each sub-pixel. For example, a blue light-emitting layer may be included in at least the blue light-emitting portion BEM1 of the first region and the blue light-emitting portion BEM2 of the second region, a green light-emitting layer may be included in at least the green light-emitting portion GEM1 of the first region and the green light-emitting portion GEM2 of the second region, and a red light-emitting layer may be included in at least the red light-emitting portion REM1 of the first region and the red light-emitting portion REM2 of the second region. A red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer may be provided on each first electrode 210 for each sub-pixel SP.

[0110] In addition to the light-emitting layer, the intermediate layer 220 may include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, which can be continuously arranged not only in each sub-pixel P1_SP of the first region and each sub-pixel P2_SP1, P2_SP2, or P2_SP3 of the second region, but also in the light-transmitting portion TA, but is not necessarily limited thereto.

[0111] As another example, at least two or more light-emitting layers among the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer may be stacked and provided in each sub-pixel SP, and white light may be displayed through the light-emitting element ED. In this case, the light-emitting color of each sub-pixel may further include a color filter on top of the light-emitting element ED to express the corresponding color.

[0112] As described above, the intermediate layer 220 may be provided in a series structure of two or more stacks STACK. In this case, each light-emitting element ED may include a charge generation layer provided between the stacks. The charge generation layer may be a common layer provided over the entire surface of the display area AA. When different color light-emitting layers are provided in each light-emitting portion, the same light-emitting layer may be provided in a multi-stack structure including the charge generation layer between the light-emitting portions.

[0113] The second electrode 230 can be formed by thinning a transparent electrode such as ITO or IZO or a reflective transparent electrode such as silver, silver alloy, magnesium, magnesium alloy, ytterbium (Yb) or ytterbium alloy. In another embodiment, in order to increase the transmission of the light-transmitting portion TA, the second electrode 230 can be partially removed from the light-transmitting portion TA or formed with a small thickness. The second electrode 230 can be a common layer that is provided to be shared by the sub-pixels SP and to apply the same voltage to the sub-pixels SP. For this purpose, the second electrode 230 can be provided to extend from the display area AA to the non-display area NA.

[0114] The second electrode 230 may be a light-transmitting electrode. The second electrode 230 may include a transparent conductive metal material (TCO) such as ITO or IZO that can transmit light, or a semi-transmitting metal material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode 230 is configured as a semi-transmitting metal material, the luminous efficiency can be increased through the microcavity effect.

[0115] A cap layer (not shown) is further formed on the second electrode 230 to protect the second electrode 230 of the light emitting element ED and to increase light emitting efficiency in an upward direction.

[0116] The encapsulation layer 300 is disposed on the light emitting element ED. The encapsulation layer 300 may cover the display area AA and the non-display area NA to prevent oxygen or moisture from penetrating into the light emitting element ED. If necessary, other layers such as a cap layer may be interposed between the encapsulation layer 300 and the second electrode 230.

[0117] The encapsulation layer 300 may include a plurality of layers. The encapsulation layer 300 may have a structure in which an inorganic film including an inorganic insulating material and an organic film including an organic insulating material are alternately stacked. For example, the inorganic insulating material may include one or more materials such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0118] The organic insulating material may include one or more materials selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane.

[0119] Will refer to Figure 4 and Figure 5 The configuration of the lower side of the light emitting element ED is described.

[0120] Figure 5 Two transistors are shown provided at the lower side of the light emitting element ED. The first transistor T1 may be Figure 2 The switching transistor, and the second transistor T2 can be a driving transistor.

[0121] Figure 4 The driving transistor at each of the sub-pixels P1_SP of the first area BA and the sub-pixels P2_SP1, P2_SP2, and P2_SP3 of the second area SA is shown. The structure of the switching transistor at each sub-pixel can be referred to Figure 5 .

[0122] The first transistor T1 may include a first barrier pattern 141, a first active layer 152 overlapping the first barrier pattern 141, a first gate electrode 162 partially overlapping the first active layer 152, and a source-drain electrode 173 and another source-drain (not shown) connected to both sides of the first active layer 152.

[0123] The second transistor T2 may include a second barrier pattern 145 , a second active layer 151 overlapping the second barrier pattern 145 , a second gate electrode 161 partially overlapping the second active layer 151 , and source-drain electrodes 171 and 172 connected to both sides of the second active layer 151 .

[0124] The first and second light-shielding patterns 141 and 145 prevent the first and second active layers 152 and 151 of the first and second transistors T1 and T2 from being affected by lower light transmitted from the substrate 110. The first and second light-shielding patterns 141 and 145 may be disposed at different layers.

[0125] The first transistor T1 may include a gate connection electrode 174 to connect the first gate electrode 162 and the first light-shielding pattern 141 located at the same layer as the source-drain electrode 173. The gate connection electrode 174 may be vertically bifurcated and connected through a fifth contact hole CT5 and a sixth contact hole CT6 present in the insulating film. The source-drain electrode 173 of the first transistor T1 may be connected to one side of the first active layer 152. In this case, the first light-shielding pattern 141 may serve as a bottom gate electrode, and the first gate electrode 162 may serve as a top gate electrode, thereby achieving high drive of the first transistor T1.

[0126] One electrode 172 of the source-drain electrodes of the second transistor T2 may be connected to the second active layer 151 and the second light-shielding pattern 145. One electrode 172 of the source-drain electrodes of the second transistor T2 may be vertically bifurcated and connected through the second contact hole CT2 and the third contact hole CT3 present in the insulating film. The other electrode 171 of the source-drain electrodes of the second transistor T2 may be connected to the other side of the second active layer 151.

[0127] The first active layer 152 of the first transistor T1 and the second active layer 151 of the second transistor T2 may be located on the same layer. When the first active layer 152 and the second active layer 151 are located on the same layer, the active layers of the respective transistors can be formed in the same process, and thus, the number of masks can be reduced. The first active layer 152 and the second active layer 151 may include at least one of an oxide semiconductor, crystalline silicon, or amorphous silicon.

[0128] When the first active layer 152 and the second active layer 151 are formed of an oxide semiconductor, a crystallization process is omitted, thus having an effect of reducing greenhouse gas.

[0129] The first transistor T1 and the second transistor T2 may be connected to one side of the light shielding pattern and the active layer, respectively, and thus have a function of stabilizing the potential of the light shielding pattern. The first transistor T1 may be a switching transistor, and the second transistor T2 may be a driving transistor.

[0130] The first transistor T1 and the second transistor T2 can be provided in the same sub-pixel. The distance between the shading pattern and the active layer of the first transistor T1 and the second transistor T2 is different. When the distance between the shading pattern and the active layer is reduced, the S factor increases, which is conducive to expressing grayscales including low grayscales. Because the second region has a sub-pixel setting density lower than the sub-pixel setting density of the first region due to the presence of the light-transmitting portion, the first transistor T1 corresponding to relatively high current drive can be used as a driving transistor for the second region, and the second transistor T2 can be used as a driving transistor for the first region for normal grayscale expression. The first active layer and the second active layer provided in the first transistor T1 and the second transistor T2 may include different oxide semiconductors to reduce the mobility difference.

[0131] Each of the first pixel P1 of the first area BA and the second pixel P2 of the second area SA includes first to third sub-pixels SP1, SP2, and SP3, and each sub-pixel includes a switching transistor and a driving transistor. In addition, for compensation purposes, the sub-pixels may further include a light emission control transistor operated by a light emission control signal, a plurality of switching transistors, and the like.

[0132] Compared with the first to third subpixels (P1_SP) included in the first area BA, the first to third subpixels (P2_SP1, P2_SP2, P2_SP3) in the second area SA require high brightness and high current drive, and therefore, the configuration of the switching transistor and the driving transistor may be different in the first area BA and the second area SA.

[0133] The substrate 110 may be formed of a flexible plastic material and may have a flexible characteristic. As another example, the substrate 110 may include a thin glass material having flexibility.

[0134] For example, the substrate 110 may include a first organic film and a second organic film overlapping each other with an inorganic interlayer insulating film therebetween. The first organic film and the second organic film may include the same or different organic films, such as PET (polyethylene terephthalate) and polyimide. In some cases, an adhesive film such as a PSA (pressure sensitive adhesive) film may be included between the first organic film and the second organic film.

[0135] The substrate 110 serves to support and protect components of the display device 1000 placed thereon.

[0136] A plurality of insulating films (200: 121, 122, 123, 124, 125, 126, 127, 128, 129, 130 and 131) are stacked in the display area AA and the non-display area (see FIG. Figure 1 NA), so that the electrodes (141, 145, 161 / 162, 171 / 172 / 173, 174) of the driving transistor T2 and the switching transistor T1 constituting the first region and the second region can be insulated from each other.

[0137] The first buffer layer 121 and the second buffer layer 122 are formed of an inorganic insulating material and are disposed on the display area AA and the non-display area NA of the substrate 110. The first buffer layer 121 and the second buffer layer 122 are disposed on the substrate 110 to protect structures disposed on the substrate 110 from moisture that penetrates through the substrate 110 and to flatten the surface of the substrate 110.

[0138] The first buffer layer 121 may be provided up to the edge of the substrate 110 to prevent moisture from penetrating from the edge of the substrate 110. The first buffer layer 121 may include a plurality of inorganic films including other types of transistors other than the transistors provided on the substrate 110 and may serve as an interlayer insulating film or a gate insulating film of the other transistors.

[0139] For example, the first and second buffer layers 121 and 122 may include one or more inorganic films of silicon oxide (SiOx) film, silicon nitride (SiNx) film, and silicon oxynitride (SiOxNy) film, or may include a multilayer film in which the above inorganic films are stacked.

[0140] The first light-shielding pattern 141 may be provided on the second buffer layer 122 and formed of a conductive metal material. Specifically, the conductive metal material may include at least one of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a silver-based metal such as silver (Ag) or a silver alloy, a copper-based metal such as copper (Cu) or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or a molybdenum alloy, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0141] A first insulating film 123 and a second insulating film 124 may be sequentially provided on the second buffer layer 122 on which the first light-shielding pattern 141 is disposed.

[0142] The first and second buffer layers 121 and 122 and the first and second insulating films 123 and 124 may function as one of a buffer layer, a gate insulating film, or an interlayer insulating film of an active layer formed as a layer different from the active layer 151 or 152 of the illustrated transistor.

[0143] In addition, the first insulating film 123 and the second insulating film 124 may serve as buffer layers for an active layer disposed thereon.

[0144] The first insulating film 123 and the second insulating film 124 may include an inorganic material. The inorganic material may include, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a multilayer film thereof. In some cases, the second buffer layer 113 may serve as a gate insulating film of a transistor including a polycrystalline silicon semiconductor layer.

[0145] The second light-shielding pattern 145 may be provided as a conductive metal material on the second insulating film 124. Specifically, the conductive metal material may include at least one of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a silver-based metal such as silver (Ag) or a silver alloy, a copper-based metal such as copper (Cu) or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or a molybdenum alloy, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0146] For example, the first and second light-shielding patterns 141 and 145 may function as electrodes of a storage capacitor included in a circuit of a subpixel.The first and second light-shielding patterns 141 and 145 may be a single layer or may have a stacked structure of a plurality of different metal materials.

[0147] The third insulating film 125 and the fourth insulating film 126 may be sequentially provided on the second insulating film 124 on which the second light-shielding pattern 145 is provided.

[0148] The third insulating film 125 and the fourth insulating film 126 may include an inorganic material. The inorganic material may include, for example, a silicon oxide (SiOx) film or a multilayer film in which inorganic films are stacked.

[0149] The fourth insulating film 126 is provided under each active layer 151 or 152 and may function as a buffer layer. In addition, the fourth insulating film 126 may serve to flatten the surface of a region where the active layer 151 or 152 provided thereover is formed.

[0150] The first active layer 152 of the first transistor T1 and the second active layer 151 of the second transistor T2 are disposed on the fourth insulating film 126 .

[0151] The first active layer 152 and the second active layer 151 are formed in the same process and may include an oxide semiconductor material. The oxide semiconductor material may be formed from a combination of at least one metal selected from zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti) and an oxide. In some cases, the mobility of the active layers included in the sub-pixels P2_SP1, P2_SP2, and P2_SP3 in the second region may be increased compared to the sub-pixels in the first region.

[0152] The mobility may be increased by further incorporating a metal having high conductivity such as tin (Sn) or iron (Fe) into the oxide semiconductor material, or the mobility may be adjusted by changing the composition ratio of the metal combined with oxygen.

[0153] According to an embodiment of the present disclosure, the light-emitting display device includes a first light-shielding pixel-defining film 240A and a second light-shielding pixel-defining film 240B in a configuration of pixel-defining films BNK1 and BNK2 that define each light-emitting portion of the light-emitting element ED disposed above the transistor T1 and the transistor T2, thereby blocking light laterally transmitted from adjacent sub-pixels, preventing the threshold voltage of the transistor from fluctuating, and improving light sensitivity.

[0154] Furthermore, because the first area BA has a high subpixel density and all subpixels are laterally adjacent to the blue light-emitting portion, the first light-shielding pixel defining film 240A surrounding the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, and the first red light-emitting portion REM1 has a high first height H1. Because the subpixel density in the second area SA is relatively low and the blue light-emitting portion has a greater impact on the active layer formed of the oxide semiconductor than the green or red light-emitting portions, the second light-shielding pixel defining film 240BA surrounding the second blue light-emitting portion BEM2 is designed to have a first height H1. Furthermore, the second green light-emitting portion GEM2 or the second red light-emitting portion REM2 not adjacent to the second blue light-emitting portion BEM2 has a second light-shielding pixel defining film 240BB designed to have a low second height H2. Furthermore, the height of the second light-shielding pixel defining film 240BC in the area adjacent to the light-transmitting portion TA without a transistor is further reduced to a third height H3. The light-transmitting portion TA may not have a light-shielding pixel defining film for light transmission.

[0155] The fifth insulating film 127 is provided on the fourth insulating film 126 and is provided with the first active layer 152 and the second active layer 151 of the first transistor T1 and the second transistor T2 of each sub-pixel. The fifth insulating film 127 can be used as a gate insulating film and can be formed of a silicon oxide film or the like.

[0156] The first gate electrode 162 and the second gate electrode 161 are provided on the fifth insulating film 127 so that they partially overlap with the first active layer 152 and the second active layer 151, respectively. The gate electrodes 162 and 161 may include at least one of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a copper-based metal such as copper (Cu) or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or a molybdenum alloy, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti). The gate electrodes 162 and 161 may include a single layer or multiple layers.

[0157] The sixth insulating film 128 and the seventh insulating film 129 are provided on the fifth insulating film 127 so as to overlap with the first gate electrode 162 and the second gate electrode 161. For example, the sixth insulating film 128 and the seventh insulating film 129 may include an inorganic material such as a silicon oxide layer or a silicon nitride layer. In some cases, at least one of the sixth insulating film 128 and the seventh insulating film 129 may include a multilayer in which inorganic layers are stacked.

[0158] The first, second, and fourth contact holes CT1, CT2, and CT4 are provided in the fifth to seventh insulating films 127, 128, and 129 to expose both sides of the upper surface of the second active layer 151 and one side of the upper surface of the first active layer 152. Furthermore, a third contact hole CT3 is provided in the third to seventh insulating films 125, 126, 127, 128, and 129 to expose a portion of the upper surface of the second light-shielding pattern 145. A portion of the upper surface of the first light-shielding pattern 141 is exposed through the sixth contact hole CT6 provided in the first to seventh insulating films 123, 124, 125, 126, 127, 128, and 129, and a portion of the upper surface of the first gate electrode 162 is exposed through the fifth contact hole CT5 provided in the sixth and seventh insulating films 128 and 129.

[0159] The first source-drain electrode 171 and the second source-drain electrode 172 are obtained by filling the first contact hole CT1, the second contact hole CT2 and the third contact hole CT3 with a conductive metal material. Figure 5 As shown, the second source-drain electrode 172 is provided to overlap the second and third contact holes CT2 and CT3 and may connect one side of the upper surface of the second active layer 151 of the second transistor T2 and the upper surface of the second light-shielding pattern 145 .

[0160] A conductive metal material is filled in the fourth contact hole CT4, the fifth contact hole CT5, and the sixth contact hole CT6, and then a third source-drain electrode 173 and a fourth source-drain electrode (not shown) and a gate connection electrode 174 are provided. The third source-drain electrode 173 and the fourth source-drain electrode are connected to both sides of the upper surface of the first active layer 152. The gate connection electrode 174 overlaps with the first gate electrode 162 and the first light-shielding pattern 141, respectively, and is connected to the first gate electrode 162 and the first light-shielding pattern 141 through the fifth contact hole CT5 and the sixth contact hole CT6.

[0161] The first light-shielding pattern 141 and the first gate electrode 162 are connected by the gate connection electrode 174 and thus have the same potential. Therefore, the first light-shielding pattern 141 and the first gate electrode 162 can respectively serve as the upper and lower gate electrodes of the first active layer 152. Therefore, the first transistor T1 includes a dual gate and thus has high-speed driving characteristics and a dual switching function, and thus can be easily arranged in a limited area at a high density.

[0162] The conductive metal material constituting each of the source-drain electrode 171, the source-drain electrode 172, the source-drain electrode 173 and the gate connection electrode 174 may include an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a copper-based metal such as copper (Cu) or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or a molybdenum alloy, chromium (Cr), tantalum (Ta), neodymium (Nd) or titanium (Ti).

[0163] A first planarization film 130 covering the source-drain electrodes 171, 172, and 173 and the gate connection electrode 174 may be provided.

[0164] The first planarization film 130 may be formed of an inorganic insulating material or an organic insulating material. The inorganic insulating material may be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a multilayer film in which inorganic films are stacked. The organic insulating material may include one or more materials selected from acrylic resin, phenolic resin, polyimide resin, unsaturated polyester resin, polyamide resin, benzocyclobutene, polyphenylene ether resin, and polyphenylene sulfide resin.

[0165] The connection electrode 181 may be provided so as to fill the contact hole of the first planarization film 130 and may be connected to the first source / drain electrode 171 of the second transistor T2 through a conductive metal material. The conductive metal material may include at least one of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a copper-based metal such as copper (Cu) or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or a molybdenum alloy, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0166] The second planarization film 131 is provided on the first planarization film 130 on which the connection electrode 181 is provided, and includes an eighth contact hole CT8 to expose the upper surface of the connection electrode 181 in the second planarization film 131. In addition, in the sub-pixels P2_SP1, P2_SP2, and P2_SP3 of the second region, the second planarization film 131 is provided with a groove 131R in which a portion of the second planarization film 131 is removed from the upper surface of the second planarization film 131 to a predetermined depth.

[0167] The second planarization film 131 may be formed of an organic insulating material to planarize the surface on which the light emitting element ED is formed. The organic insulating material may include at least one material selected from acrylic resin, phenolic resin, polyimide resin, unsaturated polyester resin, polyamide resin, benzocyclobutene, polyphenylene ether resin, and polyphenylene sulfide resin.

[0168] The first electrode 210 of the light emitting element ED may be connected to the connection electrode 181 through the eighth contact hole CT8 of the second planarization film 131 .

[0169] Embodiments of the present disclosure provide a light-emitting display device that exhibits improved brightness based on structural changes in a region where a light-emitting portion and a light-transmitting portion are mixed.

[0170] The light-emitting display device according to the embodiment of the present disclosure can prevent the influence of upper light and internal scattered light on lower components based on the light-shielding pixel defining film provided around the light-emitting portion.

[0171] According to an embodiment of the present disclosure, a light-emitting display device includes a light-shielding pixel defining film in a structure including an active layer of a high-mobility oxide semiconductor, and includes a light-shielding pixel defining film having a low height in an area in which a sensor or a camera is provided, thereby increasing light transmittance in the area in which the sensor and the camera are provided.

[0172] According to an embodiment of the present disclosure, the light-emitting display device reduces the height difference between the light-shielding pixel defining film located around the blue light-emitting portion and the light-shielding pixel defining film located around the green light-emitting portion or the red light-emitting portion in the area where the sensor or camera is provided, thereby preventing the characteristics of the high-mobility oxide semiconductor from changing drastically when irradiated with relatively short-wavelength light.

[0173] The light-emitting display device according to the embodiment of the present disclosure can prevent light generated from an adjacent light-emitting element from being transmitted to the light-transmitting portion based on the light-shielding pixel-defining film provided around the light-transmitting portion.

[0174] The light-emitting display device according to an embodiment of the present disclosure can prevent rapid changes in brightness through a gradual thickness change of a light-shielding pixel defining film at a boundary between a light-emitting portion and a light-transmitting portion.

[0175] The light emitting display device according to the embodiment of the present disclosure can respond to the high brightness characteristic required by the sensor unit because the transistor in the sensor unit has the high mobility characteristic.

[0176] According to an embodiment of the present disclosure, a light-emitting display device includes a groove in a light-emitting portion of an area where a sensor or camera is provided, thereby improving both reflection efficiency and light-emitting efficiency. Therefore, the light-emitting display device has sustainable significance, thereby achieving ESG (environmental, social, and governance) goals.

[0177] The light-emitting display device according to an embodiment of the present disclosure has a light-shielding pixel defining film, thereby preventing changes in the transistor caused by light generated from the light-emitting element and reducing the defect rate of the transistor. The light-emitting display device according to an embodiment of the present disclosure can reduce the amount of materials used throughout the manufacturing process, such as gases and etchants used to manufacture the display device, because active patterns of different structures can be manufactured in the same process. Accordingly, it is possible to provide a light-emitting display device that can achieve process optimization and reduce greenhouse gases generated due to the manufacturing process. In addition, the light-emitting display device according to an embodiment of the present disclosure forms an active layer for each area in the same process, thereby reducing the process required for additional materials through process optimization, reducing comprehensive energy consumption, and reducing greenhouse gases that may be generated by the manufacturing process. Accordingly, it is possible to obtain ESG (environmental / social / governance) effects through process optimization.

[0178] Figure 6 is a cross-sectional view showing a light emitting display device according to a second embodiment of the present disclosure.

[0179] like Figure 6 As shown, in the light-emitting display device 1000B according to the second embodiment of the present disclosure, a second light-shielding pixel defining film 240B is provided in the second area SA including the sensor or camera. The second light-shielding pixel defining film 240B may include a first height portion 240BA having a first height H1 for the second blue light-emitting portion BEM2 and a second height portion 240BB having a second height H2 for the second green light-emitting portion GEM2 and the second red light-emitting portion REM2, which is lower than the first height H1. The second light-shielding pixel defining film 240B may also include a varying portion 240V having a thickness that gradually decreases from the second height H2 at a boundary portion KHR between the light-transmitting portion TA and the second green light-emitting portion GEM2 or the second red light-emitting portion REM2.

[0180] In the light emitting display device according to the second embodiment of the present disclosure, the variation portion 240V of the second light-shielding pixel defining film 240B may have a lower height as the distance from the light transmitting portion TA decreases.

[0181] In this manner, the height of the varying portion 240V of the second light-shielding pixel defining film 240B gradually changes at the boundary between the light-transmitting portion TA and the adjacent sub-pixel P2_SP2 or P2_SP3, thereby preventing a significant change in brightness between the light-transmitting portion TA and the adjacent sub-pixel P2_SP. The varying portion 240V of the second light-shielding pixel defining film 240B, which gradually changes in height, can prevent the boundary between the light-emitting portion REM2, GEM2, or BEM2 and the light-transmitting portion TA from being visible in the second region.

[0182] Figure 6 A switching transistor at each of the sub-pixel P1_SP of the first area BA and the sub-pixels P2_SP1 , P2_SP2 , and P2_SP3 of the second area SA is shown.

[0183] Meanwhile, the same configurations in the second embodiment as those in the first embodiment have the same effects, and descriptions of the same parts are omitted.

[0184] Figure 7 is a cross-sectional view showing a light emitting display device according to a third embodiment of the present disclosure.

[0185] like Figure 7 As shown, the light-emitting display device according to the third embodiment of the present disclosure may include a plurality of inorganic insulating films 121, 122, 123, 124, 125, 126, 127, 128 and 129 between the substrate 110 and the light-emitting element ED, and a first planarization film 130 and a second planarization film 131.

[0186] In addition, the plurality of inorganic insulating films 121, 122, 123, 124, 125, 126, 127, 128, and 129 around the light transmission portion TA, and at least one of the first planarization film 130 and the second planarization film 131 may have sidewalls. In the light transmission portion TA, at least one of the plurality of inorganic insulating films 121, 122, 123, 124, 125, 126, 127, 128, and 129 and the first planarization film 130 and the second planarization film 131 may be removed to increase the transmittance of the light transmission portion.

[0187] The light-emitting display device 1000C according to the third embodiment of the present disclosure includes a substrate 110 including a first area BA and a second area SA, and light-shielding pixel defining films 240A and 240B having different heights in the first area BA and the second area SA.

[0188] That is, the first light-shielding pixel defining film 240A provided in the first area BA exposes the first blue light emitting portion BEM1 , the first green light emitting portion GEM1 , and the first red light emitting portion REM1 , and has a first height H1 .

[0189] The second light-shielding pixel defining film 240B provided in the second area SA includes a first height portion 240BA exposing the second blue light emitting portion BEM2, a second height portion 240BB exposing the second green light emitting portion GEM2 and the second red light emitting portion REM2, and a third height portion 230BC adjacent to the light-transmitting portion TA. The first height portion 240BA has a first height H1, the second height portion 240BB has a second height H2 less than the first height H1, and the third height portion 240BC has a third height H3 less than the second height H2.

[0190] The height of the second light-shielding pixel defining film 240B in the region surrounding the light-emitting portions BEM2, GEM2, and REM2 adjacent to the light-transmitting portion TA can be further reduced to a third height H3. Furthermore, the transparent pixel defining film 250 can also be removed from the light-transmitting portion TA to increase light transmission of the light-transmitting portion TA.

[0191] In the light-emitting display device 1000C according to the third embodiment of the present disclosure, a light-shielding pixel-defining film 240BE may be included on the sidewalls of at least one of the plurality of inorganic insulating films 121, 122, 123, 124, 125, 126, 127, 128, and 129, and the first and second planarizing films 130 and 131. In this case, internal scattered light laterally directed between the light-transmitting portion TA and the adjacent sub-pixels P2_SP1, P2_SP2, and P2_SP3 can be completely blocked around the light-transmitting portion TA, thereby improving light sensitivity in the light-transmitting portion TA. The light-shielding pixel-defining film 240BE may be connected to the second light-shielding pixel-defining film 240B. The light-shielding pixel-defining film 240BE may be integral with the second light-shielding pixel-defining film 240B.

[0192] In addition, the light-emitting display device 1000C according to the third embodiment of the present disclosure can completely block the influence of internal scattered light transmitted from the light-transmitting part TA to the surrounding light-emitting parts REM2, GEM2 and BEM2, and can effectively block the transmission of the internal scattered light to the transistor.

[0193] A light-shielding pixel defining film 240E provided on the side walls of at least one of the multiple inorganic insulating films 121, 122, 123, 124, 125, 126, 127, 128 and 129, and the first planarizing film 130 and the second planarizing film 131 has a thickness equal to the third height H3 surrounding the adjacent light-emitting portions BEM2, GEM2 and REM2, and thereby avoids a decrease in the transmittance of the light-transmitting portion TA.

[0194] Embodiments of the present disclosure provide a light-emitting display device that exhibits improved brightness based on structural changes in a region where a light-emitting portion and a light-transmitting portion are mixed.

[0195] The light-emitting display device according to the embodiment of the present disclosure can prevent the influence of upper light and internal scattered light on lower components based on the light-shielding pixel defining film provided around the light-emitting portion.

[0196] According to an embodiment of the present disclosure, a light-emitting display device includes a light-shielding pixel defining film in a structure including an active layer of a high-mobility oxide semiconductor, and includes a light-shielding pixel defining film having a low height in an area in which a sensor or a camera is provided, thereby increasing light transmittance in the area in which the sensor and the camera are provided.

[0197] According to an embodiment of the present disclosure, the light-emitting display device reduces the height difference between the light-shielding pixel defining film located around the blue light-emitting portion and the light-shielding pixel defining film located around the green light-emitting portion or the red light-emitting portion in the area where the sensor or camera is provided, thereby preventing the characteristics of the high-mobility oxide semiconductor from changing drastically when irradiated with relatively short-wavelength light.

[0198] The light-emitting display device according to the embodiment of the present disclosure can prevent light generated from an adjacent light-emitting element from being transmitted to the light-transmitting portion based on the light-shielding pixel-defining film provided around the light-transmitting portion.

[0199] The light-emitting display device according to an embodiment of the present disclosure can prevent rapid changes in brightness through a gradual thickness change of a light-shielding pixel defining film at a boundary between a light-emitting portion and a light-transmitting portion.

[0200] The light emitting display device according to the embodiment of the present disclosure can respond to the high brightness characteristic required by the sensor unit because the transistor in the sensor unit has the high mobility characteristic.

[0201] According to an embodiment of the present disclosure, a light-emitting display device includes a groove in a light-emitting portion of an area where a sensor or camera is provided, thereby improving both reflection efficiency and light-emitting efficiency. Therefore, the light-emitting display device has sustainable significance, thereby achieving ESG (environmental, social, and governance) goals.

[0202] According to one embodiment of the present disclosure, a light-emitting display device may include: a substrate including a first area and a second area; a first light-shielding pixel defining film provided at the first area, exposing the first blue light-emitting portion, the first green light-emitting portion and the first red light-emitting portion, and having a first height; a second light-shielding pixel defining film provided at the second area, including an area exposing the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion, and a light-transmitting portion, and including an area having a second height less than the first height; and a light-emitting element on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

[0203] In the light-emitting display device according to one embodiment of the present disclosure, the second light-shielding pixel defining film may have a second height around the second green light emitting portion and the second red light emitting portion.

[0204] In the light-emitting display device according to one embodiment of the present disclosure, the height of the second light-shielding pixel defining film may decrease as the distance from the light-transmitting portion decreases.

[0205] In the light-emitting display device according to one embodiment of the present disclosure, the second light-shielding pixel defining film has a second height around the second green light emitting portion, the second red light emitting portion, and the light transmitting portion.

[0206] In a light-emitting display device according to one embodiment of the present disclosure, the second light-shielding pixel defining film may have a first height around the second blue light-emitting portion, and the second light-shielding pixel defining film may have a second height around the second green light-emitting portion, the second red light-emitting portion and the light-transmitting portion.

[0207] In a light-emitting display device according to one embodiment of the present disclosure, the second light-shielding pixel defining film at the second area may include an area in which the boundary between at least one of the second blue light-emitting portion, the second red light-emitting portion, and the second green light-emitting portion and the light-transmitting portion has a third height lower than the second height.

[0208] The light-emitting display device according to one embodiment of the present disclosure may further include a planarization film between the substrate and the light-emitting element. The planarization film may have grooves at the second blue light-emitting portion, the second green light-emitting portion, and the second red light-emitting portion, wherein the grooves have a predetermined thickness relative to the upper surface of the planarization film.

[0209] In a light-emitting display device according to one embodiment of the present disclosure, a light-emitting element may include a first electrode including a reflective electrode, an intermediate layer on the first electrode, and a second electrode disposed on the intermediate layer. The surface areas of the second blue light-emitting portion, the second green light-emitting portion, and the second red light-emitting portion located on the groove may be wider than the surface areas of the first blue light-emitting portion, the first green light-emitting portion, and the first red light-emitting portion on the planarization film.

[0210] In the light-emitting display device according to one embodiment of the present disclosure, the groove may not overlap with the second light-shielding pixel defining film. The first electrode of the second region may be located on the entire region of the groove and a portion of the planarization film around the groove.

[0211] In a light-emitting display device according to one embodiment of the present disclosure, the surface area of ​​the second blue light-emitting portion may be larger than the surface area of ​​the first blue light-emitting portion. The surface area of ​​the second green light-emitting portion may be larger than the surface area of ​​the first green light-emitting portion. The surface area of ​​the second red light-emitting portion may be larger than the surface area of ​​the first red light-emitting portion.

[0212] The light-emitting display device according to one embodiment of the present disclosure may further include a transparent pixel-defining film on each of the first light-shielding pixel-defining film and the second light-shielding pixel-defining film.

[0213] The light-emitting display device according to one embodiment of the present disclosure may further include a transistor connected to the light-emitting element between the substrate and the planarization film.

[0214] In the light-emitting display device according to one embodiment of the present disclosure, the transistor may include an active layer at each of the first region and the second region, the active layer including an oxide semiconductor.

[0215] In the light emitting display device according to one embodiment of the present disclosure, the mobility of the active layer at the second region may be greater than that of the active layer at the first region.

[0216] The light-emitting display device according to one embodiment of the present disclosure may further include a light-shielding pattern under the active layer.

[0217] In a light-emitting display device according to one embodiment of the present disclosure, a transistor may include a gate electrode overlapping an active layer, and first and second source-drain electrodes respectively connected to the active layer. One of the first and second source-drain electrodes may be connected to a light-shielding pattern.

[0218] In a light-emitting display device according to an embodiment of the present disclosure, the light-emitting display device may include multiple inorganic insulating films and multiple planarization films between a substrate and a light-emitting element. At least one of the inorganic insulating film or the planarization film may have a sidewall around the light-transmitting portion.

[0219] In the light-emitting display device according to one embodiment of the present disclosure, at least one sidewall of the inorganic insulating film and the planarization film between the substrate and the light-emitting element may include a light-shielding pixel defining film.

[0220] As is apparent from the above, the light-emitting display device according to the embodiment of the present disclosure has the following effects.

[0221] Embodiments of the present disclosure provide a light-emitting display device that exhibits improved brightness based on structural changes in a region where a light-emitting portion and a light-transmitting portion are mixed.

[0222] The light-emitting display device according to the embodiment of the present disclosure can prevent the influence of upper light and internal scattered light on lower components based on the light-shielding pixel defining film provided around the light-emitting portion.

[0223] According to an embodiment of the present disclosure, a light-emitting display device includes a light-shielding pixel defining film in a structure including an active layer of a high-mobility oxide semiconductor, and includes a light-shielding pixel defining film having a low height in an area in which a sensor or a camera is provided, thereby increasing light transmittance in the area in which the sensor and the camera are provided.

[0224] According to an embodiment of the present disclosure, the light-emitting display device reduces the height difference between the light-shielding pixel defining film located around the blue light-emitting portion and the light-shielding pixel defining film located around the green light-emitting portion or the red light-emitting portion in the area where the sensor or camera is provided, thereby preventing the characteristics of the high-mobility oxide semiconductor from changing drastically when irradiated with relatively short-wavelength light.

[0225] The light-emitting display device according to the embodiment of the present disclosure can prevent light generated from an adjacent light-emitting element from being transmitted to the light-transmitting portion based on the light-shielding pixel defining film provided around the light-transmitting portion.

[0226] The light-emitting display device according to an embodiment of the present disclosure can prevent rapid changes in brightness through a gradual thickness change of a light-shielding pixel defining film at a boundary between a light-emitting portion and a light-transmitting portion.

[0227] The light emitting display device according to the embodiment of the present disclosure can respond to the high brightness characteristic required by the sensor unit because the transistor in the sensor unit has the high mobility characteristic.

[0228] According to an embodiment of the present disclosure, a light-emitting display device includes a groove in a light-emitting portion of an area where a sensor or camera is provided, thereby improving both reflection efficiency and light-emitting efficiency. Therefore, the light-emitting display device has sustainable significance, thereby achieving ESG (environmental, social, and governance) goals.

[0229] The light-emitting display device according to an embodiment of the present disclosure has a light-shielding pixel defining film, thereby preventing changes in the transistor caused by light generated from the light-emitting element and reducing the defect rate of the transistor. The light-emitting display device according to an embodiment of the present disclosure can reduce the amount of materials used throughout the manufacturing process, such as gases and etchants used to manufacture the display device, because active patterns of different structures can be manufactured in the same process. Accordingly, it is possible to provide a light-emitting display device that can achieve process optimization and reduce greenhouse gases generated due to the manufacturing process. In addition, the light-emitting display device according to an embodiment of the present disclosure forms an active layer for each area in the same process, thereby reducing the process required for additional materials through process optimization, reducing comprehensive energy consumption, and reducing greenhouse gases that may be generated by the manufacturing process. Accordingly, it is possible to obtain ESG (environmental / social / governance) effects through process optimization.

[0230] Various modifications and variations can be made in the disclosure without departing from the spirit and scope of the disclosure, which will be apparent to those skilled in the art. Therefore, the present disclosure is intended to cover such modifications and variations as long as they fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: a substrate comprising a first region and a second region; a first light-shielding pixel defining film, the first light-shielding pixel defining film being provided at the first region, exposing the first blue light emitting portion, the first green light emitting portion, and the first red light emitting portion, and having a first height; a second light-shielding pixel defining film provided at the second region, including a region exposing the second blue light emitting portion, the second green light emitting portion, the second red light emitting portion, and the light-transmitting portion, and including a region having a second height smaller than the first height; as well as a light emitting element on each of the first blue light emitting portion, the first green light emitting portion, the first red light emitting portion, the second blue light emitting portion, the second green light emitting portion, and the second red light emitting portion.

2. The light-emitting display device according to claim 1, wherein The second light-shielding pixel defining film has the second height around the second green light emitting portion and the second red light emitting portion.

3. The light-emitting display device according to claim 1, wherein A height of the second light-shielding pixel defining film decreases as a distance from the light-transmitting portion decreases.

4. The light-emitting display device according to claim 1, wherein: The second light-shielding pixel defining film has the second height around the second green light emitting portion, the second red light emitting portion, and the light transmitting portion.

5. The light-emitting display device according to claim 1, wherein The second light-shielding pixel defining film has the first height around the second blue light-emitting portion, and the second light-shielding pixel defining film has the second height around the second green light-emitting portion, the second red light-emitting portion, and the light-transmitting portion. The light-emitting display device according to claim 1 , wherein: The second light-shielding pixel defining film at the second area includes an area in which a boundary between at least one of the second blue light-emitting portion, the second red light-emitting portion, and the second green light-emitting portion and the light-transmitting portion has a third height lower than the second height.

7. The light-emitting display device according to claim 1, further comprising: a planarization film between the substrate and the light emitting element, The planarization film has grooves at the second blue light emitting portion, the second green light emitting portion, and the second red light emitting portion, and the grooves have a predetermined thickness relative to an upper surface of the planarization film.

8. The light-emitting display device according to claim 7, wherein: The light emitting element comprises: a first electrode, the first electrode comprising a reflective electrode; an intermediate layer, the intermediate layer being on the first electrode; and a second electrode, the second electrode being disposed on the intermediate layer, In which, the surface area of ​​the second blue light emitting portion, the second green light emitting portion and the second red light emitting portion located on the groove is wider than the surface area of ​​the first blue light emitting portion, the first green light emitting portion and the first red light emitting portion on the planarization film.

9. The light-emitting display device according to claim 8, wherein: The groove does not overlap with the second light-shielding pixel defining film, and the first electrode at the second region is located over the entire region of the groove and a portion of the planarization film around the groove.

10. The light-emitting display device according to claim 1, wherein The surface area of ​​the second blue light emitting portion is larger than the surface area of ​​the first blue light emitting portion, The surface area of ​​the second green light emitting portion is larger than the surface area of ​​the first green light emitting portion, and The surface area of ​​the second red light emitting portion is larger than the surface area of ​​the first red light emitting portion. 11 . The light-emitting display device according to claim 1 , further comprising a transparent pixel-defining film on each of the first light-shielding pixel-defining film and the second light-shielding pixel-defining film.

12. The light-emitting display device according to claim 8, wherein: The first light-shielding pixel defining film and the second light-shielding pixel defining film are provided on a portion of the first electrode and a portion of the planarization film.

13. The light-emitting display device according to claim 7, further comprising: A transistor is connected to the light emitting element and is located between the substrate and the planarization film.

14. The light-emitting display device according to claim 13, wherein: The transistor includes an active layer including an oxide semiconductor at each of the first region and the second region.

15. The light-emitting display device according to claim 14, wherein: The mobility of the active layer at the second region is higher than the mobility of the active layer at the first region.

16. The light-emitting display device according to claim 14, further comprising: A light shielding pattern is provided below the active layer.

17. The light-emitting display device according to claim 16, wherein: The transistor includes: a gate electrode, the gate electrode overlapping the active layer; and a first source-drain electrode and a second source-drain electrode, wherein the first source-drain electrode and the second source-drain electrode are respectively connected to the active layer, Wherein, one of the first source-drain electrode and the second source-drain electrode is connected to the light shielding pattern.

18. The light-emitting display device according to claim 13, wherein: The transistor includes a gate connection electrode connecting a gate electrode and a light shielding pattern in at least one of the first region and the second region. 19 . The light-emitting display device according to claim 1 , further comprising a plurality of inorganic insulating films and a plurality of planarization films between the substrate and the light-emitting element. in, At least one of the plurality of inorganic insulating films and the plurality of planarization films has a side wall around the light transmitting portion.

20. The light-emitting display device according to claim 19, wherein The sidewall of at least one of the plurality of inorganic insulating films or the plurality of planarization films between the substrate and the light emitting element includes a light-shielding pixel defining film.

21. The light-emitting display device according to claim 20, wherein: The light-shielding pixel defining film on the at least one sidewall of the inorganic insulating film and the planarization film between the substrate and the light-emitting element has a third height smaller than the second height.

Images