Pure water generation device and method

Through the combination of reverse osmosis filtration layer, hydrophobic hollow fiber porous membrane assembly, ultraviolet sterilization device and deionization device, the pure water quality problem in semiconductor manufacturing is solved, impurities are efficiently removed and water temperature is stabilized, generating pure water that meets process requirements.

CN120589970APending Publication Date: 2025-09-05鸿舸半导体设备(上海)有限公司
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Patent Information

Application Number
CN202510741756.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-05
Publication Date
2025-09-05

AI Technical Summary

Technical Problem

In the semiconductor manufacturing process, existing technology makes it difficult to generate pure water that meets process requirements. Factors such as particulate impurities, bubbles, microorganisms, ions and temperature fluctuations in the water affect product performance and yield.

Method used

It uses a combination of reverse osmosis filtration layer, hydrophobic hollow fiber porous membrane assembly, ultraviolet sterilization device, deionization device and insulation device to generate pure water that meets the requirements of semiconductor process through filtration, sterilization, deionization and temperature control.

Benefits of technology

Effectively remove particulate impurities, bubbles and ions in water, stabilize water temperature, ensure pure water quality meets semiconductor process requirements, and improve product performance and yield.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a pure water generation device and method.The device comprises a reverse osmosis filter layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionizing device and a heat preservation device; a first space area is formed between the outer side of the reverse osmosis filter layer and the inner side of the hydrophobic hollow fiber porous membrane component; a second space area is formed among the outer side of the hydrophobic hollow fiber porous membrane assembly, the outer side of the deionizing device and the outer side of the heat preservation device; the ultraviolet sterilization device is arranged in the first space area; the reverse osmosis filter layer is used for filtering particle impurities in the raw water to obtain first pretreated water; the ultraviolet sterilization device is used for performing ultraviolet sterilization treatment on the first pretreated water; the hydrophobic hollow fiber porous membrane component sucks out bubbles in the first pretreated water; the deionizing device adsorbs anions and cations in the second pretreated water to obtain pure water; the heat preservation device adjusts the temperature of pure water. Through the device, pure water meeting the requirements of a semiconductor process manufacturing procedure is generated.
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Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a pure water generation device and method. Background Art

[0002] The semiconductor manufacturing process places extremely high demands on pure water quality. Particles, bubbles, microorganisms, ions, and temperature fluctuations in the water can severely impact the semiconductor production process, further impacting product performance and yield. Therefore, there is an urgent need for a device that can generate pure water that meets the requirements of semiconductor manufacturing processes. Summary of the Invention

[0003] In view of this, the purpose of this application is to provide a pure water generating device and method to generate pure water that meets the requirements of semiconductor process technology.

[0004] In a first aspect, an embodiment of the present application provides a pure water generating device, comprising: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device, and a heat preservation device; wherein a first spatial region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second spatial region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; and the ultraviolet sterilization device is disposed in the first spatial region;

[0005] The reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generating device, so that the filtered raw water enters the first space area as the first pretreated water;

[0006] The ultraviolet sterilization device is used to perform ultraviolet sterilization treatment on the first pretreated water in the first spatial area;

[0007] The hydrophobic hollow fiber porous membrane assembly is used to absorb bubbles in the first pretreated water in the first space region into the second space region by utilizing a first pressure difference between the second space region and the first space region when a negative pressure is formed in the second space region;

[0008] The deionization device is used to absorb anions and cations in the second pre-treated water so that the water entering the heat preservation device is pure water; wherein the second pre-treated water is the first pre-treated water output from the first space area after ultraviolet sterilization treatment and bubble absorption;

[0009] The heat preservation device is used to adjust the water temperature of the pure water so as to control the water temperature of the pure water within the temperature range required by the semiconductor process.

[0010] In combination with the first aspect, an embodiment of the present application provides a first possible implementation manner of the first aspect, wherein the internal space of the pure water generating device is divided into a third space region and a fourth space region by the reverse osmosis filtration layer, the third space region is a space region formed by the inner side of the reverse osmosis filtration layer and the water inlet side of the pure water generating device, and the fourth space region is a space region formed by the outer side of the reverse osmosis filtration layer and the inner wall of the pure water generating device; the hydrophobic hollow fiber porous membrane assembly, the ultraviolet sterilization device, the deionization device, the heat preservation device, the first space region, and the second space region are all located in the fourth space region;

[0011] Part of the deionization device is embedded in the hydrophobic hollow fiber porous membrane assembly, and the embedding depth of the part of the deionization device is greater than or equal to the thickness of the hydrophobic hollow fiber porous membrane assembly, so that the second pretreated water in the first space area can enter the deionization device;

[0012] The shape of the pure water generating device and the shape of the third space area are both cylindrical; the side cross-section shape of the reverse osmosis filter layer is U-shaped; the side cross-section shape of the hydrophobic hollow fiber porous membrane assembly is symmetrical L-shaped.

[0013] In combination with the first aspect, the embodiment of the present application provides a second possible implementation of the first aspect, wherein the reverse osmosis filter layer includes, from the inside to the outside, a first filter layer, a second filter layer, and a third filter layer;

[0014] When the reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generating device, it is specifically used to:

[0015] filtering the raw water entering the pure water generating device through the first filter layer, the second filter layer, and the third filter layer in sequence;

[0016] Wherein, the first filter layer is used to intercept particulate impurities with a particle size greater than or equal to a first preset particle size;

[0017] The second filter layer is used to intercept particulate impurities with a particle size smaller than the first preset particle size and greater than or equal to a second preset particle size; wherein the first preset particle size is greater than the second preset particle size;

[0018] The third filter layer is used to intercept particulate impurities with a particle size smaller than the second preset particle size.

[0019] In combination with the first possible implementation of the first aspect, the embodiment of the present application provides a third possible implementation of the first aspect, wherein the pure water generating device further includes a pressure sensor and a control unit; the raw water enters the third space area through the water inlet;

[0020] The pressure sensor is configured to detect a first water pressure of the raw water in the third space region and a second water pressure of the first pretreated water in the first space region, and transmit the first water pressure and the second water pressure to the control unit;

[0021] The control unit is used to start the backwash task when the first water pressure is greater than the second water pressure and the second pressure difference between the first water pressure and the second water pressure is greater than a preset pressure difference, and control the first pretreated water in the first space area to reversely flush the reverse osmosis filter layer.

[0022] In combination with the third possible implementation manner of the first aspect, the embodiment of the present application provides a fourth possible implementation manner of the first aspect, wherein the second space region is connected to an air inlet and an air outlet, the air inlet is used to deliver inert gas into the second space region, and the air outlet is used to exhaust gas in the second space region;

[0023] The control unit is further configured to control the amount of inert gas delivered from the air inlet to the second space region and to control the amount of gas discharged from the air outlet to discharge gas from the second space region, so as to form a negative pressure in the second space region.

[0024] In combination with the fourth possible implementation of the first aspect, the embodiment of the present application provides a fifth possible implementation of the first aspect, wherein the pure water generating device further includes a bubble content detection sensor;

[0025] The bubble content detection sensor is used to detect the bubble content in the first pretreated water in the first space area and send the bubble content to the control unit;

[0026] The control unit is also used to enhance the negative pressure in the second space area by controlling the air intake and the air outlet when the bubble content is greater than a preset bubble content, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

[0027] In combination with the third possible implementation of the first aspect, the embodiment of the present application provides a sixth possible implementation of the first aspect, wherein the ultraviolet sterilization device includes a first ultraviolet lamp arranged at the center of the first spatial area and a plurality of second ultraviolet lamps evenly distributed inside the hydrophobic hollow fiber porous membrane assembly; the pure water generating device also includes a first temperature sensor;

[0028] The first temperature sensor is configured to detect a water temperature of the first pretreated water in the first spatial area and send the water temperature of the first pretreated water to the control unit;

[0029] The control unit is further configured to adjust the water temperature of the first pretreated water in the first spatial area so as to control the water temperature of the first pretreated water within an optimal sterilization temperature range.

[0030] In combination with the third possible implementation manner of the first aspect, the embodiment of the present application provides a seventh possible implementation manner of the first aspect, wherein at least one set of double-layer concentric annular electrodes is disposed in the internal space of the deionization device; the double-layer concentric annular electrodes include: an annular electrode with a positive charge and an annular electrode with a negative charge;

[0031] The positively charged annular electrode is used to adsorb anions in the second pretreated water when the second pretreated water enters the inner space of the deionization device and passes through the positively charged annular electrode group;

[0032] The negatively charged annular electrode is used to adsorb cations in the second pretreated water when the second pretreated water enters the inner space of the deionization device and passes through the negatively charged annular electrode;

[0033] The pure water generating device further includes a conductivity sensor;

[0034] The conductivity sensor is used to detect the conductivity of the second pretreated water in the internal space of the deionization device and send the conductivity to the control unit;

[0035] The control unit is also used to control the voltage increase of the double-layer concentric annular electrode when the conductivity is greater than the preset conductivity, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

[0036] In combination with the third possible implementation manner of the first aspect, the embodiment of the present application provides an eighth possible implementation manner of the first aspect, wherein the deionization device is in fluid communication with the internal space of the heat preservation device, so that the pure water produced by the deionization device flows into the internal space of the heat preservation device; a heating device and a cooling device are provided in the side wall of the heat preservation device; and the pure water generating device further includes a second temperature sensor;

[0037] The second temperature sensor is used to detect the water temperature of the pure water in the internal space of the heat preservation device and send the water temperature of the pure water to the control unit;

[0038] When the heat preservation device is used to adjust the temperature of the pure water, the heating device is specifically used to:

[0039] When the temperature of the pure water is lower than the lowest value of the temperature range required by the semiconductor process, the pure water in the inner space of the heat preservation device is heated under the control of the control unit;

[0040] The cooling device is specifically used for:

[0041] When the temperature of the pure water is higher than the highest value of the temperature range required by the semiconductor process, the pure water in the inner space of the heat preservation device is cooled down under the control of the control unit.

[0042] In a second aspect, an embodiment of the present application further provides a pure water generation method, which is applied to a pure water generation device, wherein the pure water generation device includes: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device, and a heat preservation device; wherein a first spatial region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second spatial region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; the ultraviolet sterilization device is disposed in the first spatial region; the method includes:

[0043] filtering particulate impurities in the raw water entering the pure water generating device through the reverse osmosis filter layer, so that the filtered raw water enters the first space area as first pretreated water;

[0044] Performing ultraviolet sterilization treatment on the first pretreated water in the first space area by the ultraviolet sterilization device;

[0045] When negative pressure is formed in the second space region, the bubbles in the first pretreated water in the first space region are sucked out into the second space region through the hydrophobic hollow fiber porous membrane assembly by utilizing the first pressure difference formed between the second space region and the first space region;

[0046] The deionization device adsorbs anions and cations in the second pre-treated water so that the water entering the heat preservation device is pure water; wherein the second pre-treated water is the first pre-treated water output from the first space area after ultraviolet sterilization treatment and bubble absorption;

[0047] The water temperature of the pure water is adjusted by the heat preservation device to control the water temperature of the pure water within the temperature range required by the semiconductor process.

[0048] An embodiment of the present application provides a pure water generation device and method, wherein particulate impurities in raw water are first filtered out through a reverse osmosis filtration layer to obtain first pretreated water, and then the first pretreated water is sterilized by ultraviolet light. At the same time, by combining a hydrophobic hollow fiber porous membrane component and negative pressure degassing technology, bubbles in the first pretreated water are efficiently removed and microorganisms are killed to obtain second pretreated water; anions and cations in the second pretreated water are adsorbed by a deionization device to reduce the electrical conductivity of the water, thereby meeting the demand for low ion concentration pure water required by semiconductor process technology; finally, the water temperature of the pure water is adjusted by a heat preservation device to stabilize the water temperature of the pure water generated by the pure water generation device, thereby avoiding the impact of temperature fluctuations on the semiconductor process technology.

[0049] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 A side sectional view showing the internal structure of a pure water generating device provided in an embodiment of the present application;

[0052] Figure 2 A three-dimensional schematic diagram showing the internal structure of a pure water generating device provided in an embodiment of the present application;

[0053] Figure 3A side sectional view showing the internal structure of another pure water generating device provided in an embodiment of the present application;

[0054] Figure 4 A side cross-sectional view showing the internal structure of an ion device and a heat preservation device provided in an embodiment of the present application;

[0055] Figure 5 A flow chart of a pure water generation method provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0056] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application.

[0057] The semiconductor manufacturing process places extremely high demands on pure water quality. Particles, bubbles, microorganisms, ions, and temperature fluctuations in the water can severely impact the semiconductor production process, further impacting product performance and yield. Therefore, there is an urgent need for a device that can generate pure water that meets the requirements of semiconductor manufacturing processes.

[0058] In view of the above problems, based on this, the embodiments of the present application provide a pure water generation device and method to generate pure water that meets the requirements of semiconductor process technology, which is described below through embodiments.

[0059] To facilitate understanding of this embodiment, a pure water generating device disclosed in an embodiment of the present application is first introduced in detail. Figure 1 A side sectional view showing the internal structure of a pure water generating device provided in an embodiment of the present application is shown. Figure 1 As shown, the pure water generating device includes: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device, and a heat preservation device; wherein a first space region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second space region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; and the ultraviolet sterilization device is disposed in the first space region;

[0060] The reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generating device, so that the filtered raw water enters the first space area as the first pre-treated water;

[0061] An ultraviolet sterilization device, used for performing ultraviolet sterilization treatment on the first pretreated water in the first spatial area;

[0062] The hydrophobic hollow fiber porous membrane assembly is used to absorb bubbles in the first pretreated water in the first spatial region into the second spatial region by utilizing a first pressure difference between the second spatial region and the first spatial region when a negative pressure is formed in the second spatial region;

[0063] a deionization device for absorbing anions and cations in the second pretreated water so that the water entering the heat preservation device is pure water; wherein the second pretreated water is the first pretreated water output from the first spatial area and subjected to ultraviolet sterilization treatment and bubble absorption;

[0064] The heat preservation device is used to adjust the temperature of pure water so as to control the temperature of pure water within the temperature range required by the semiconductor process.

[0065] In this embodiment, the raw water can be tap water, barreled mineral water, bottled mineral water, etc. When the raw water enters the pure water generation device, it first passes through the reverse osmosis filter layer to filter out the particulate impurities in the raw water, so that the filtered raw water passes through the reverse osmosis filter layer as the first pretreated water and enters the first space area.

[0066] The ultraviolet sterilization device performs ultraviolet sterilization treatment on the first pre-treated water entering the first space area.

[0067] The hydrophobic hollow fiber porous membrane assembly has a unique microporous structure that allows gas to pass but prevents water from passing through. By reducing the air pressure in the second spatial region so that the pressure in the second spatial region is lower than the pressure in the first spatial region, a first pressure differential (generally 0.2-0.3 MPa) is formed between the second spatial region and the first spatial region. This first pressure differential is used to absorb bubbles in the first pretreated water in the first spatial region through the hydrophobic hollow fiber porous membrane assembly into the second spatial region, thereby reducing the bubble content in the first pretreated water (for example, to below 1 ppm).

[0068] The first pretreated water in the first spatial region that has been subjected to ultraviolet sterilization treatment and bubble removal is used as the second pretreated water. The second pretreated water is flowed into a deionizer, and the deionizer adsorbs anions and cations in the second pretreated water, thereby removing the anions and cations in the second pretreated water and reducing the conductivity of the second pretreated water. The second pretreated water output from the deionizer (i.e., the second pretreated water from which the anions and cations have been removed) is input into a heat preservation device as pure water. The temperature of the pure water is adjusted by the heat preservation device to be within the temperature range required by the semiconductor process, thereby avoiding adverse effects on the semiconductor process due to temperature fluctuations.

[0069] In one possible implementation, Figure 1 and Figure 2 As shown, the internal space of the pure water generating device is divided into a third space region and a fourth space region (not shown in the figure) by the reverse osmosis filtration layer. The third space region is a space region formed by the inner side of the reverse osmosis filtration layer and the water inlet side of the pure water generating device, and the fourth space region is a space region formed by the outer side of the reverse osmosis filtration layer and the inner wall of the pure water generating device; the hydrophobic hollow fiber porous membrane assembly, the ultraviolet sterilization device, the deionization device, the heat preservation device, the first space region, and the second space region are all located in the fourth space region;

[0070] Part of the deionization device is embedded in the hydrophobic hollow fiber porous membrane assembly, and the embedding depth of the part of the deionization device is greater than or equal to the thickness of the hydrophobic hollow fiber porous membrane assembly, so that the second pretreated water in the first space area can enter the deionization device;

[0071] The pure water generating device and the third space area are both cylindrical; the side cross-section of the reverse osmosis filter layer is U-shaped; and the side cross-section of the hydrophobic hollow fiber porous membrane assembly is symmetrically L-shaped.

[0072] In this embodiment, the shape of the pure water generating device may be a column, for example, a cylinder, a cube, a prism, a pyramid, or a three-dimensional shape formed by a combination of columns of various shapes. Figure 2 A schematic structural diagram is shown when the pure water generating device is in the shape of a cylinder.

[0073] In this embodiment, Figure 1 and 2 As shown, the hydrophobic hollow fiber porous membrane components are symmetrically arranged on both sides of the deionization device.

[0074] In this embodiment, the side cross-section of the reverse osmosis filter layer is U-shaped, which is beneficial to increase the contact area between the raw water and the reverse osmosis filter layer, so that the raw water can be filtered faster.

[0075] By making the side cross-section of the hydrophobic hollow fiber porous membrane assembly into a symmetrical L-shape, the contact area between the first pretreated water and the hydrophobic hollow fiber porous membrane assembly is increased, thereby removing bubbles in the first pretreated water more quickly.

[0076] In one possible implementation, Figure 1 and 2 As shown, the hydrophobic hollow fiber porous membrane assembly can be fixed by a support frame. In another possible embodiment, as Figure 3 As shown, the hydrophobic hollow fiber porous membrane module can be directly arranged on the inner wall of the pure water generating device.

[0077] In one possible embodiment, the reverse osmosis filtration layer adopts a multi-layer reverse osmosis filtration membrane assembly, which includes, from the inside to the outside, a first filtration layer (coarse filtration layer), a second filtration layer (fine filtration layer), and a third filtration layer (ultra-fine filtration layer);

[0078] When the reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generation device, it is specifically used to:

[0079] The raw water entering the pure water generating device is filtered through the first filter layer, the second filter layer, and the third filter layer in sequence;

[0080] The first filter layer is used to intercept particulate impurities with a particle size greater than or equal to a first preset particle size;

[0081] The second filter layer is used to intercept particulate impurities with a particle size smaller than a first preset particle size and greater than or equal to a second preset particle size; wherein the first preset particle size is greater than the second preset particle size;

[0082] The third filter layer is used to intercept particulate impurities with a particle size smaller than the second preset particle size.

[0083] For example, the first preset particle size is 5 microns, the second preset particle size is 0.1 microns, the first filter layer can intercept particulate impurities with a particle size greater than or equal to 5 microns, the second filter layer can filter out tiny particulate impurities with a particle size between 0.1-5 microns, and the third filter layer further removes particulate impurities with a particle size less than 0.1 microns, which is conducive to making the water turbidity of the first pretreated water entering the first space area lower than 0.1NTU.

[0084] In a possible embodiment, the pure water generating device further includes a pressure sensor and a control unit; raw water enters the third space area through the water inlet;

[0085] a pressure sensor for detecting a first water pressure of the raw water in the third space area and a second water pressure of the first pretreated water in the first space area, and sending the first water pressure and the second water pressure to the control unit;

[0086] The control unit is used to start the backwash task when the first water pressure is greater than the second water pressure and the second pressure difference between the first water pressure and the second water pressure is greater than the preset pressure difference (for example, 0.1 MPa), and control the first pretreated water in the first space area to reversely flush the reverse osmosis filter layer.

[0087] In this embodiment, the particulate impurities on the surface of the reverse osmosis filter layer are washed away by reverse water flow, thereby ensuring the filtering effect and smooth water flow.

[0088] In a possible embodiment, the second space region is connected to an air inlet and an air outlet, the air inlet is used to transport the inert gas into the second space region, and the air outlet is used to discharge the gas in the second space region;

[0089] The control unit is also used to control the amount of inert gas delivered from the air inlet to the second space area and to control the amount of gas discharged from the air outlet to discharge the gas in the second space area, so as to form a negative pressure in the second space area.

[0090] In this embodiment, the air inlet and the air outlet can be provided on the outer wall of the pure water generating device, and the inert gas can be nitrogen. The control unit controls the air inlet to deliver the inert gas into the second spatial region, and controls the air outlet to discharge the gas in the second spatial region (including the inert gas entering the second spatial region and the gas in the bubbles removed from the first pretreated water) so that the air pressure value in the second spatial region is lower than the pressure value in the first spatial region, thereby forming a negative pressure in the second spatial region.

[0091] In a possible implementation, the pure water generating device further includes a bubble content detection sensor;

[0092] The bubble content detection sensor is used to detect the bubble content in the first pretreated water in the first spatial area and send the bubble content to the control unit;

[0093] The control unit is also used to enhance the negative pressure in the second space area by controlling the air intake and outlet when the bubble content is greater than the preset bubble content, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

[0094] In this embodiment, bubble content sensors are installed at the inlet and outlet of the first space area respectively to detect the bubble content of the first pretreated water in the first space area in real time and feed back to the control unit so as to adjust the air pressure in the second space area and the water flow rate of the raw water in a timely manner.

[0095] In one possible embodiment, to enhance the ultraviolet sterilization effect, the ultraviolet sterilization device includes a first ultraviolet lamp disposed at the center of the first space region and a plurality of second ultraviolet lamps evenly distributed inside the hydrophobic hollow fiber porous membrane assembly.

[0096] In this embodiment, the first ultraviolet lamp and the second ultraviolet lamp form an all-round ultraviolet irradiation environment in the first spatial area by emitting ultraviolet rays, ensuring that the first pretreated water is fully irradiated by ultraviolet rays in the first spatial area, thereby further reducing the microbial content.

[0097] At the same time, the pure water generating device further includes a first temperature sensor;

[0098] a first temperature sensor, configured to detect a water temperature of the first pretreated water in the first spatial area and send the water temperature of the first pretreated water to the control unit;

[0099] The control unit is further used to adjust the water temperature of the first pretreated water in the first spatial area to control the water temperature of the first pretreated water within the optimal sterilization temperature range.

[0100] In this embodiment, considering that the ultraviolet sterilization effect is affected by water temperature, when the water temperature deviates from the optimal sterilization temperature range (generally 20-25° C.), the water temperature of the first pretreated water is adjusted to ensure the sterilization effect.

[0101] In one possible implementation, Figure 4 As shown, at least one set of double-layer concentric annular electrodes ( Figure 4 Only one group is shown); the double-layer concentric annular electrode includes: an annular electrode with a positive charge and an annular electrode with a negative charge;

[0102] The positively charged annular electrode is used to adsorb anions in the second pretreated water when the second pretreated water enters the inner space of the deionization device and passes through the positively charged annular electrode group;

[0103] The annular electrode with negative charge is used for absorbing cations in the second pretreated water when the second pretreated water entering the inner space of the deionization device passes through the annular electrode with negative charge.

[0104] In this embodiment, Figure 4 As shown, when the second pretreated water passes through the annular electrode group, the cations in the second pretreated water move toward the negatively charged annular electrode under the action of the electric field and are adsorbed, while the anions move toward the positively charged annular electrode and are adsorbed, thereby effectively removing the anions and cations in the second pretreated water and reducing the conductivity of the second pretreated water to below 1μS / cm.

[0105] The pure water generating device also includes a conductivity sensor;

[0106] a conductivity sensor for detecting the conductivity of the second pretreated water in the internal space of the deionization device and sending the conductivity to the control unit;

[0107] The control unit is also used to control the voltage increase of the double-layer concentric ring electrodes when the conductivity is greater than the preset conductivity, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

[0108] In this embodiment, in order to improve the removal efficiency of anions and cations, ion exchange resin particles are filled between each set of double-layer concentric annular electrodes (i.e., annular electrodes with positive charge and annular electrodes with negative charge) to enhance the adsorption and exchange capacity of anions and cations.

[0109] In one possible implementation, Figure 4 As shown, the deionization device is in fluid communication with the internal space of the heat preservation device, so that the pure water produced by the deionization device flows into the internal space of the heat preservation device; a heating device and a cooling device are provided in the side wall of the heat preservation device; the pure water generating device further includes a second temperature sensor;

[0110] a second temperature sensor, configured to detect the temperature of the pure water in the internal space of the heat preservation device and send the temperature of the pure water to the control unit;

[0111] When the insulation device is used to adjust the temperature of pure water, the heating device is specifically used to:

[0112] When the temperature of the pure water is lower than the minimum value of the temperature range required by the semiconductor process (generally 23-27°C), the pure water in the internal space of the insulation device is heated under the control of the control unit;

[0113] The cooling device is specifically used for:

[0114] When the temperature of the pure water is higher than the highest value of the temperature range required by the semiconductor process, the pure water in the inner space of the heat preservation device is cooled down through the control of the control unit.

[0115] In this embodiment, the heat preservation device may be a heating wire, and the temperature reduction device may be cooling water or a heat dissipation fan.

[0116] By controlling the temperature of the pure water produced by the pure water generating device to be stable within the temperature range required by the semiconductor process, adverse effects on the semiconductor process caused by temperature fluctuations can be avoided.

[0117] In one possible implementation, a heat-insulating layer is provided on the outermost layer of the pure water generating device, and a high-efficiency heat-insulating material (such as polyurethane foam) is used to wrap the entire pure water generating device to reduce heat by 30%.

[0118] In a possible implementation, a water inlet valve is provided at the water inlet of the pure water generating device, and the control unit can adjust the flow rate of the raw water entering the third space area by controlling the opening of the water inlet valve.

[0119] In this embodiment, the control unit can also transmit the sensor data detected by each sensor to the remote monitoring center to achieve remote monitoring and management.

[0120] In this embodiment, the reverse osmosis filter layer is regularly inspected for appearance and promptly replaced if damaged or contaminated. Based on backwash records, the reverse osmosis filter layer is regularly chemically cleaned using a dedicated membrane cleaning agent, prepared according to the instructions, and soaked for 2-4 hours before rinsing with clean water. The pressure sensor is calibrated every six months to ensure accurate pressure data.

[0121] Regularly inspect the integrity of the hydrophobic hollow fiber porous membrane assembly and replace any damage promptly. Maintain the inert gas supply equipment quarterly, inspect the gas pipeline for leaks, and replace the filter element. Regularly clean the first UV lamp and the second UV lamp on the inner wall of the hydrophobic hollow fiber porous membrane assembly using alcohol to remove surface dirt and impurities to ensure UV emission intensity. Calibrate the bubble content sensor every six months.

[0122] Regularly check the operating status of the first and second UV lamps. When the lifespan of the first and second UV lamps reaches 80% of their rated lifespan (which can be determined based on usage), replace the lamps promptly. Calibrate the temperature sensor quarterly to ensure accurate temperature data. Regularly clear debris from the first space and maintain unobstructed water flow.

[0123] Regularly inspect the surface of the double-layer concentric ring electrodes and clean or replace any corrosion or scaling. Regenerate the ion exchange resin particles quarterly using the acid-base regeneration method and following the specified regeneration process. Calibrate the conductivity sensor every six months.

[0124] Regularly check the integrity of insulation materials and repair or replace any damage. Check the operation of heating and cooling devices monthly and repair or replace any malfunctions. Calibrate temperature sensors every six months.

[0125] Check the control unit hardware monthly, including circuit boards, controllers, and communication modules, to ensure stable operation of the control unit. Regularly back up the operating data of the pure water generator to facilitate analysis and evaluation of its operation.

[0126] Based on the same technical concept, an embodiment of the present application also provides a pure water generation method, which is applied to a pure water generation device, wherein the pure water generation device includes: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device and a heat preservation device; wherein a first space region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second space region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; the ultraviolet sterilization device is arranged in the first space region; Figure 5 As shown, the method includes the following steps:

[0127] S101: filtering particulate impurities in the raw water entering the pure water generating device through the reverse osmosis filter layer, so that the filtered raw water enters the first space area as first pretreated water;

[0128] S102: performing ultraviolet sterilization treatment on the first pretreated water in the first space area by the ultraviolet sterilization device;

[0129] S103: When a negative pressure is formed in the second space region, bubbles in the first pretreated water in the first space region are sucked out into the second space region through the hydrophobic hollow fiber porous membrane assembly by utilizing a first pressure difference between the second space region and the first space region;

[0130] S104: Adsorbing anions and cations in the second pretreated water by the deionization device so that the water entering the heat preservation device is pure water; wherein the second pretreated water is the first pretreated water output from the first space area after ultraviolet sterilization treatment and bubble absorption;

[0131] S105: regulating the temperature of the pure water by the heat preservation device to control the temperature of the pure water within the temperature range required by the semiconductor process.

[0132] Optionally, the internal space of the pure water generating device is divided into a third space region and a fourth space region by the reverse osmosis filtration layer, the third space region being a space region formed by the inner side of the reverse osmosis filtration layer and the water inlet side of the pure water generating device, and the fourth space region being a space region formed by the outer side of the reverse osmosis filtration layer and the inner wall of the pure water generating device; the hydrophobic hollow fiber porous membrane assembly, the ultraviolet sterilization device, the deionization device, the heat preservation device, the first space region, and the second space region are all located in the fourth space region;

[0133] Part of the deionization device is embedded in the hydrophobic hollow fiber porous membrane assembly, and the embedding depth of the part of the deionization device is greater than or equal to the thickness of the hydrophobic hollow fiber porous membrane assembly, so that the second pretreated water in the first space area can enter the deionization device;

[0134] The shape of the pure water generating device and the shape of the third space area are both cylindrical; the side cross-section shape of the reverse osmosis filter layer is U-shaped; the side cross-section shape of the hydrophobic hollow fiber porous membrane assembly is symmetrical L-shaped.

[0135] Optionally, the reverse osmosis filter layer includes, from the inside to the outside, a first filter layer, a second filter layer, and a third filter layer; the raw water entering the pure water generating device is filtered through the first filter layer, the second filter layer, and the third filter layer in sequence;

[0136] The filtering of particulate impurities in the raw water entering the pure water generating device through the reverse osmosis filtration layer includes:

[0137] intercepting particulate impurities with a particle size greater than or equal to a first preset particle size through the first filter layer;

[0138] intercepting particulate impurities with a particle size smaller than the first preset particle size and greater than or equal to the second preset particle size by the second filter layer; wherein the first preset particle size is greater than the second preset particle size;

[0139] The third filter layer intercepts particulate impurities with a particle size smaller than the second preset particle size.

[0140] Optionally, the pure water generating device further includes a pressure sensor and a control unit; the raw water enters the third space area through the water inlet; and the method further includes:

[0141] detecting, by the pressure sensor, a first water pressure of the raw water in the third space region and a second water pressure of the first pretreated water in the first space region, and sending the first water pressure and the second water pressure to the control unit;

[0142] When the first water pressure is greater than the second water pressure, and a second pressure difference between the first water pressure and the second water pressure is greater than a preset pressure difference, the backwash task is started by the control unit to control the first pretreated water in the first space area to reversely flush the reverse osmosis filtration layer.

[0143] Optionally, the second space region is connected to an air inlet and an air outlet, the air inlet is used to transport inert gas into the second space region, and the air outlet is used to discharge gas in the second space region; the method further includes:

[0144] The control unit controls the inlet port to deliver an inert gas into the second space region and controls the outlet port to discharge the gas in the second space region, so that a negative pressure is formed in the second space region.

[0145] Optionally, the pure water generating device further includes a bubble content detection sensor; and the method further includes:

[0146] detecting the bubble content in the first pretreated water in the first spatial area by the bubble content detection sensor, and sending the bubble content to the control unit;

[0147] When the bubble content is greater than the preset bubble content, the air intake and the air outlet are controlled by the control unit to enhance the negative pressure in the second space area, and / or the water flow rate of the water inlet is controlled by the control unit to reduce the water flow rate of the raw water entering the third space area.

[0148] Optionally, the ultraviolet sterilization device includes a first ultraviolet lamp arranged at the center of the first spatial area and a plurality of second ultraviolet lamps evenly distributed inside the hydrophobic hollow fiber porous membrane assembly; the pure water generating device also includes a first temperature sensor; and the method further includes:

[0149] detecting the water temperature of the first pretreated water in the first spatial area by the first temperature sensor, and sending the water temperature of the first pretreated water to the control unit;

[0150] The control unit adjusts the water temperature of the first pretreated water in the first spatial area to control the water temperature of the first pretreated water within an optimal sterilization temperature range.

[0151] Optionally, at least one set of double-layer concentric annular electrodes is provided in the internal space of the deionization device; the double-layer concentric annular electrodes include: an annular electrode with positive charge and an annular electrode with negative charge;

[0152] When the second pretreated water entering the inner space of the deionization device passes through the annular electrode group with positive charge, anions in the second pretreated water are adsorbed by the annular electrodes with positive charge; and cations in the second pretreated water are adsorbed by the annular electrodes with negative charge;

[0153] The pure water generating device further includes a conductivity sensor; and the method further includes:

[0154] detecting the conductivity of the second pretreated water in the inner space of the deionization device by the conductivity sensor and sending the conductivity to the control unit;

[0155] When the conductivity is greater than the preset conductivity, the control unit controls the voltage of the double-layer concentric annular electrode to increase, and / or controls the water flow rate of the water inlet to reduce the water flow rate of the raw water entering the third space area.

[0156] Optionally, the deionization device is in fluid communication with the internal space of the heat preservation device, so that the pure water generated by the deionization device flows into the internal space of the heat preservation device; a heating device and a cooling device are provided in the side wall of the heat preservation device; the pure water generating device further includes a second temperature sensor; and the method further includes:

[0157] detecting the water temperature of the pure water in the internal space of the heat preservation device by the second temperature sensor, and sending the water temperature of the pure water to the control unit;

[0158] The step of regulating the temperature of the pure water by the heat preservation device comprises:

[0159] When the temperature of the pure water is lower than the lowest value of the temperature range required by the semiconductor process, the control unit controls the heating device to heat the pure water in the inner space of the heat preservation device;

[0160] When the temperature of the pure water is higher than the highest value of the temperature range required by the semiconductor process, the control unit controls the cooling device to cool the pure water in the inner space of the heat preservation device.

[0161] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the method described above can refer to the corresponding process in the aforementioned device embodiment, and will not be repeated here.

[0162] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. There may be other division methods in actual implementation. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed may be through some communication interface, indirect coupling or communication connection of devices or units, which may be electrical, mechanical or other forms.

[0163] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0164] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0165] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0166] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present application, which are used to illustrate the technical solutions of the present application, rather than to limit them. The scope of protection of the present application is not limited thereto. Although the present application has been described in detail with reference to the above-described embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-described embodiments within the technical scope disclosed in the present application, or perform equivalent replacements for some of the technical features thereof. Such modifications, changes, or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application shall be based on the scope of protection of the claims.

Claims

1. A pure water generating device, characterized in that: The pure water generating device includes: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device, and a heat preservation device; wherein a first space region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second space region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; the ultraviolet sterilization device is arranged in the first space region; The reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generating device, so that the filtered raw water enters the first space area as the first pretreated water; The ultraviolet sterilization device is used to perform ultraviolet sterilization treatment on the first pretreated water in the first spatial area; The hydrophobic hollow fiber porous membrane assembly is used to absorb bubbles in the first pretreated water in the first space region into the second space region by utilizing a first pressure difference between the second space region and the first space region when a negative pressure is formed in the second space region; The deionization device is used to absorb anions and cations in the second pre-treated water so that the water entering the heat preservation device is pure water; wherein the second pre-treated water is the first pre-treated water output from the first space area after ultraviolet sterilization treatment and bubble absorption; The heat preservation device is used to adjust the water temperature of the pure water so as to control the water temperature of the pure water within the temperature range required by the semiconductor process.

2. The pure water generating device according to claim 1, characterized in that: The internal space of the pure water generating device is divided into a third space area and a fourth space area by the reverse osmosis filtration layer, the third space area is a space area formed by the inner side of the reverse osmosis filtration layer and the water inlet side of the pure water generating device, and the fourth space area is a space area formed by the outer side of the reverse osmosis filtration layer and the inner wall of the pure water generating device; the hydrophobic hollow fiber porous membrane assembly, the ultraviolet sterilization device, the deionization device, the heat preservation device, the first space area, and the second space area are all located in the fourth space area; Part of the deionization device is embedded in the hydrophobic hollow fiber porous membrane assembly, and the embedding depth of the part of the deionization device is greater than or equal to the thickness of the hydrophobic hollow fiber porous membrane assembly, so that the second pretreated water in the first space area can enter the deionization device; The shape of the pure water generating device and the shape of the third space area are both cylindrical; The side cross-section of the reverse osmosis filter layer is U-shaped; the side cross-section of the hydrophobic hollow fiber porous membrane assembly is symmetrical L-shaped.

3. The pure water generating device according to claim 1, characterized in that: The reverse osmosis filter layer includes a first filter layer, a second filter layer, and a third filter layer from the inside to the outside; When the reverse osmosis filter layer is used to filter particulate impurities in the raw water entering the pure water generating device, it is specifically used to: filtering the raw water entering the pure water generating device through the first filter layer, the second filter layer, and the third filter layer in sequence; Wherein, the first filter layer is used to intercept particulate impurities with a particle size greater than or equal to a first preset particle size; The second filter layer is used to intercept particulate impurities with a particle size smaller than the first preset particle size and greater than or equal to a second preset particle size; wherein the first preset particle size is greater than the second preset particle size; The third filter layer is used to intercept particulate impurities with a particle size smaller than the second preset particle size.

4. The pure water generating device according to claim 2, characterized in that: The pure water generating device further includes a pressure sensor and a control unit; the raw water enters the third space area through the water inlet; The pressure sensor is configured to detect a first water pressure of the raw water in the third space region and a second water pressure of the first pretreated water in the first space region, and transmit the first water pressure and the second water pressure to the control unit; The control unit is used to start the backwash task when the first water pressure is greater than the second water pressure and the second pressure difference between the first water pressure and the second water pressure is greater than a preset pressure difference, and control the first pretreated water in the first space area to reversely flush the reverse osmosis filter layer.

5. The pure water generating device according to claim 4, characterized in that: The second space region is connected to an air inlet and an air outlet, the air inlet is used to deliver inert gas into the second space region, and the air outlet is used to discharge the gas in the second space region; The control unit is further configured to control the amount of inert gas delivered from the air inlet to the second space region and to control the amount of gas discharged from the air outlet to discharge gas from the second space region, so as to form a negative pressure in the second space region.

6. The pure water generating device according to claim 5, characterized in that: The pure water generating device further includes a bubble content detection sensor; The bubble content detection sensor is used to detect the bubble content in the first pretreated water in the first space area and send the bubble content to the control unit; The control unit is also used to enhance the negative pressure in the second space area by controlling the air intake and the air outlet when the bubble content is greater than a preset bubble content, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

7. The pure water generating device according to claim 4, characterized in that: The ultraviolet sterilization device includes a first ultraviolet lamp arranged at the center of the first space area and a plurality of second ultraviolet lamps evenly distributed inside the hydrophobic hollow fiber porous membrane module; the pure water generating device also includes a first temperature sensor; The first temperature sensor is configured to detect a water temperature of the first pretreated water in the first spatial area and send the water temperature of the first pretreated water to the control unit; The control unit is further configured to adjust the water temperature of the first pretreated water in the first spatial area so as to control the water temperature of the first pretreated water within an optimal sterilization temperature range.

8. The pure water generating device according to claim 4, characterized in that: At least one set of double-layer concentric annular electrodes is provided in the internal space of the deionization device; The double-layer concentric annular electrode comprises: an annular electrode with a positive charge and an annular electrode with a negative charge; The positively charged annular electrode is used to adsorb anions in the second pretreated water when the second pretreated water enters the inner space of the deionization device and passes through the positively charged annular electrode group; The negatively charged annular electrode is used to adsorb cations in the second pretreated water when the second pretreated water enters the inner space of the deionization device and passes through the negatively charged annular electrode; The pure water generating device further includes a conductivity sensor; The conductivity sensor is used to detect the conductivity of the second pretreated water in the internal space of the deionization device and send the conductivity to the control unit; The control unit is also used to control the voltage increase of the double-layer concentric annular electrode when the conductivity is greater than the preset conductivity, and / or to reduce the water flow rate of the raw water entering the third space area by controlling the water flow rate of the water inlet.

9. The pure water generating device according to claim 4, characterized in that: The deionization device is in fluid communication with the inner space of the heat preservation device, so that the pure water produced by the deionization device flows into the inner space of the heat preservation device; A heating device and a cooling device are provided in the side wall of the heat preservation device; the pure water generating device further includes a second temperature sensor; The second temperature sensor is used to detect the water temperature of the pure water in the internal space of the heat preservation device and send the water temperature of the pure water to the control unit; When the heat preservation device is used to adjust the temperature of the pure water, the heating device is specifically used to: When the temperature of the pure water is lower than the lowest value of the temperature range required by the semiconductor process, the pure water in the inner space of the heat preservation device is heated under the control of the control unit; The cooling device is specifically used for: When the temperature of the pure water is higher than the highest value of the temperature range required by the semiconductor process, the pure water in the inner space of the heat preservation device is cooled down under the control of the control unit.

10. A method for producing pure water, characterized in that: The method is applied to a pure water generating device, which includes: a reverse osmosis filtration layer, a hydrophobic hollow fiber porous membrane assembly, an ultraviolet sterilization device, a deionization device, and a heat preservation device; wherein a first spatial region is formed between the outer side of the reverse osmosis filtration layer and the inner side of the hydrophobic hollow fiber porous membrane assembly; a second spatial region is formed between the outer side of the hydrophobic hollow fiber porous membrane assembly and the outer side of the deionization device and the outer side of the heat preservation device; the ultraviolet sterilization device is disposed in the first spatial region; the method includes: filtering particulate impurities in the raw water entering the pure water generating device through the reverse osmosis filter layer, so that the filtered raw water enters the first space area as first pretreated water; Performing ultraviolet sterilization treatment on the first pretreated water in the first space area by the ultraviolet sterilization device; When negative pressure is formed in the second space region, the bubbles in the first pretreated water in the first space region are sucked out into the second space region through the hydrophobic hollow fiber porous membrane assembly by utilizing the first pressure difference formed between the second space region and the first space region; The deionization device adsorbs anions and cations in the second pre-treated water so that the water entering the heat preservation device is pure water; wherein the second pre-treated water is the first pre-treated water output from the first space area after ultraviolet sterilization treatment and bubble absorption; The temperature of the pure water is adjusted by the heat preservation device to control the temperature of the pure water within the temperature range required by the semiconductor process.

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