Method and device for measuring temperature distribution of chip power map

Abstract

Embodiments of the present application provide a chip powermap temperature distribution measurement method and a measurement device, wherein the method comprises: determining a corresponding relationship between blackbody radiation and temperature; collecting first radiation of each pixel point of the chip at multiple different second temperatures; for each pixel point in each pixel point, determining a first emissivity of the pixel point; determining an actual emissivity of each pixel point according to multiple first emissivities of each pixel point; collecting second radiation of each pixel point of the chip in a working state; determining a blackbody radiation of each pixel point in the working state according to the second radiation and the actual emissivity of each pixel point, determining a corresponding temperature, and thus obtaining the chip powermap temperature distribution. The problem that the emissivity of each pixel point of the chip is regarded as the same emissivity in the related art, thereby causing a large error between the measured temperature and the actual temperature of the chip can be solved.

Description

Technical Field

[0001] This invention relates to the field of chips, and more specifically, to a method and apparatus for measuring the powermap temperature distribution of chips. Background Technology

[0002] As chip manufacturing processes shrink to smaller dimensions, chip power consumption and heat flux density continue to rise. Coupled with the rapid development of 2.5D and 3D heterogeneous chips, serious hotspot problems exist within chips. If hotspots cannot be identified, chip reliability, performance, and power consumption will all deteriorate. Furthermore, chip area is limited, restricting the number of T-sensors or DTSs that can be deployed. Moreover, to ensure chip functionality and layout, T-sensors cannot be placed at the center of hotspots, leading to a lower-than-normal chip junction temperature reported by T-sensors in actual measurements, thus underestimating the chip's heat dissipation risks. Currently, there is no method to obtain the chip's power map temperature distribution; simulation results are obtained through thermal simulation. However, errors in power input, packaging structure, and thermal boundary deviations result in significant differences between the simulated and actual temperature distributions. Additionally, the simulation calculation of power density within chip modules is done on a module-by-module basis; therefore, the actual heat flux density of hotspots is much higher than that of module units, causing simulated hotspot temperatures to be lower than actual temperatures.

[0003] Currently, one method for measuring the temperature distribution of an infrared chip involves spraying or attaching a coating material with a known emissivity to the back of the chip, and then obtaining the chip's temperature distribution by setting its emissivity. However, the coating material alters the chip's actual temperature distribution and also blocks heat, causing the temperature distribution captured by the infrared camera to be inaccurate. Furthermore, because the internal layout and wiring of the chip vary, the emissivity differs at different locations within the layout and wiring layers. Assigning a single emissivity value to the chip would result in significant errors in infrared temperature measurement.

[0004] There is no suitable solution yet for the problem that the measured temperature has a large error compared with the actual temperature of the chip because the emissivity of each pixel in the related technology is regarded as the same. Summary of the Invention

[0005] This invention provides a method and apparatus for measuring the powermap temperature distribution of a chip, thereby at least solving the problem in related technologies where the emissivity of each pixel on the chip is considered to be the same, resulting in a large error between the measured temperature and the actual temperature of the chip.

[0006] According to an embodiment of the present invention, a method for measuring the powermap temperature distribution of a chip is provided, the method comprising:

[0007] The radiation of a blackbody at multiple different initial temperatures was collected using an infrared camera to determine the relationship between blackbody radiation and temperature.

[0008] The infrared camera chip acquires the first radiation amount of each pixel at multiple different second temperatures;

[0009] For each pixel, the first emissivity of the pixel at the second temperature is determined based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature. Thus, a plurality of first emissivity of each pixel corresponding to the plurality of different second temperatures are obtained.

[0010] The actual emissivity of each pixel is determined based on the plurality of first emissivity of each pixel;

[0011] The infrared camera collects the second radiation level of each pixel of the chip when it is in operation.

[0012] The blackbody radiation of each pixel in the working state is determined based on the second radiation amount of each pixel and the actual emissivity, and the temperature corresponding to the blackbody radiation of each pixel in the working state is determined based on the correspondence between the blackbody radiation amount and temperature, which is used as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution.

[0013] According to another embodiment of the present invention, a measuring device for chip power map temperature distribution is provided, the device comprising an infrared camera and a data processing program;

[0014] The infrared camera is used to collect the radiation of a blackbody at multiple different first temperatures;

[0015] The data processing program is used to determine the correspondence between blackbody radiation and temperature;

[0016] The infrared camera is also used to collect the first radiation amount of each pixel of the chip at multiple different second temperatures;

[0017] The data processing program is further configured to, for each of the pixels, determine the first emissivity of the pixel at the second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature, thereby obtaining a plurality of first emissivity of each pixel corresponding one-to-one with the plurality of different second temperatures; and determine the actual emissivity of each pixel based on the plurality of first emissivity of each pixel.

[0018] The infrared camera is also used to collect the second radiation amount of each pixel of the chip when it is in operation;

[0019] The data processing program is further configured to determine the blackbody radiation of each pixel in the working state based on the second radiation amount of each pixel and the actual emissivity, and to determine the temperature corresponding to the blackbody radiation of each pixel in the working state based on the correspondence between the blackbody radiation amount and temperature, as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution.

[0020] According to another embodiment of the present invention, the device further includes a semiconductor cooler (TEC) located below the chip for controlling the temperature of the chip to reach the plurality of different second temperatures and for dissipating heat from the chip during operation.

[0021] According to another embodiment of the present invention, the device further includes a hot stage located below the chip and a liquid cooling device located above the chip, wherein the hot stage is used to control the temperature of the chip to reach the plurality of different second temperatures, and the liquid cooling device is used to dissipate heat from the chip in the working state.

[0022] This invention solves the problem in related technologies where the emissivity of each pixel on a chip is considered to be the same, resulting in a large error between the measured temperature and the actual temperature of the chip. It can obtain a more accurate distribution cloud map of the chip temperature. Attached Figure Description

[0023] Figure 1 This is a flowchart of a method for measuring chip powermap temperature distribution according to an embodiment of the present invention;

[0024] Figure 2 This is a detailed flowchart of the temperature-radiation calibration of an infrared camera according to an embodiment of the present invention;

[0025] Figure 3 This is a flowchart illustrating the determination of the actual emissivity of each pixel in a chip according to an embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of an apparatus for measuring the powermap temperature distribution of a chip according to an embodiment of the present invention. Figure 1 ;

[0027] Figure 5 This is a schematic diagram of an apparatus for measuring the powermap temperature distribution of a chip according to an embodiment of the present invention. Figure 2 . Detailed Implementation

[0028] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings and examples.

[0029] It should be noted that the terms "target," "second," etc., in the specification, claims, and drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0030] This embodiment provides a method for measuring the powermap temperature distribution of a chip. Figure 1 This is a flowchart of a method for measuring the chip powermap temperature distribution according to an embodiment of the present invention, as shown below. Figure 1 As shown, the process includes the following steps:

[0031] Step S102: Collect the radiation of the blackbody at multiple different first temperatures using an infrared camera to determine the correspondence between the blackbody radiation and temperature.

[0032] In this embodiment, the entity executing the measurement method can be a computer, a data processing program, or manual operation.

[0033] In one embodiment, the infrared camera is a mid-wave infrared camera. Infrared measurement technology includes long-wave infrared, mid-wave infrared, and short-wave infrared. Chips (also known as silicon wafers) have high transmittance in the mid-wave band, generally greater than 80%. To reduce the error in chip temperature measurement, a mid-wave infrared camera is preferred in this embodiment.

[0034] During the measurement process, the infrared camera is placed at a set distance from the blackbody, where the set distance is the focal length of the infrared camera. The temperature-radiation calibration of the infrared camera is completed through the above step S102.

[0035] Figure 2 This is a detailed flowchart of the temperature-radiation calibration of an infrared camera according to an embodiment of the present invention, as follows: Figure 2 As shown, step S102 specifically includes:

[0036] Step S202: Use an infrared camera to collect the amount of radiation emitted by the blackbody at the initial temperature;

[0037] Step S204: Use an infrared camera to collect the radiation of the blackbody at a first temperature, where the first temperature is the current temperature plus a preset increment. Repeat step S204 until sufficient measurement data is obtained.

[0038] The initial temperature and the first temperature are within the range of ambient temperature and chip operating temperature.

[0039] Step S206: Based on the radiation of the blackbody collected by the infrared camera at multiple different first temperatures, establish the correspondence between the blackbody radiation and temperature.

[0040] Through steps S202 to S204 described above, the temperature-radium calibration of the infrared camera is completed. In subsequent processes, the corresponding temperature can be obtained based on the blackbody radium and the aforementioned correspondence.

[0041] Step S104: The infrared camera chip acquires the first radiation amount of each pixel at multiple different second temperatures;

[0042] Wherein, each pixel point refers to the pixel point that the chip images in the infrared camera.

[0043] In one embodiment, the chip is a chip with the back opaque material removed, the material including at least one of the following: thermal interface material (TIM), cover material, and molding compound. This embodiment of the invention is applicable to chips using flip-chip (FC) packaging that support the removal of the back packaging material, wherein the FC package includes flip-chip ball grid array (FCBGA) packaging and flip-chip scale package (FCCSP). Furthermore, in this invention, the chip wafer preferably uses a silicon substrate, but it can also be a silicon carbide (SiC) wafer used for insulated gate bipolar transistors (IGBTs).

[0044] Before step S104 above, the method further includes removing the heat dissipation device of the chip. The heat dissipation device of the chip may include LID, TIM, heat sink, etc. LID is a material that is transmissive to mid-wave infrared, such as sapphire, silicon carbide SiC, diamond, etc., and is used to attach to the back of the chip for heat dissipation. Alternatively, heat sinks, thermoelectric coolers (TECs), etc. can be used under the PCB board below the chip for heat dissipation. In the test environment, other materials should be introduced as little as possible to avoid radiation interference.

[0045] In this embodiment, the multiple second temperatures may include two or more temperatures, for example, the two second temperatures may include a fourth temperature and a fifth temperature.

[0046] In this embodiment, to construct a test environment for the chip at multiple different second temperatures, a constant-temperature heating method can be used. For example, a temperature chamber or heating of the printed circuit board (PCB) below the chip can be used.

[0047] In one embodiment, the plurality of different second temperatures are controlled by a semiconductor cooler (TEC) located below the chip.

[0048] In another embodiment, the plurality of different second temperatures are controlled by a hot plate located below the chip.

[0049] During the above measurement process, the chip's position relative to the infrared camera remained unchanged.

[0050] Step S106: For each pixel, determine the first emissivity of the pixel at the second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature, thereby obtaining a plurality of first emissivity of each pixel corresponding one-to-one with the plurality of different second temperatures; determine the actual emissivity of each pixel based on the plurality of first emissivity of each pixel.

[0051] The blackbody radiation corresponding to each of the plurality of different second temperatures is obtained by finding the blackbody radiation corresponding to that second temperature from the correspondence between the blackbody radiation and temperature.

[0052] In practice, the emissivity of each pixel on a chip is not consistent. Therefore, in order to obtain accurate measurement results, the emissivity of each pixel on the chip is measured multiple times at different temperatures for calibration in this embodiment.

[0053] In this embodiment, the value of the first emissivity combines the emissivity of the chip itself with the transmittance of various materials along the path from the heat source to the infrared camera.

[0054] In one embodiment, determining the first emissivity of a pixel at a second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at that second temperature includes: dividing the blackbody radiation corresponding to each of the plurality of different second temperatures by the first radiation of the pixel at that second temperature to obtain the first emissivity of the pixel at that second temperature.

[0055] In one embodiment, determining the actual emissivity of each pixel based on the plurality of first emissivity of each pixel includes: for each pixel, when the plurality of first emissivity of the pixel is consistent, determining the plurality of first emissivity as the actual emissivity of the pixel; for each pixel, when the plurality of first emissivity of the pixel is inconsistent, changing the second temperature until the plurality of first emissivity of the pixel is consistent.

[0056] In one embodiment, for each pixel, when the plurality of first emissivity of the pixel is inconsistent, changing the second temperature until the plurality of first emissivity is consistent includes: for each pixel, when the plurality of first emissivity of the pixel is inconsistent, changing the second temperature and increasing the heating time until the plurality of first emissivity is consistent.

[0057] In one specific embodiment, the multiple different second temperatures include a fourth temperature and a fifth temperature. For each pixel, a first emissivity is determined at the fourth temperature as the fourth emissivity, and at the fifth temperature as the fifth emissivity. When the fourth and fifth emissivitys are consistent, the fourth and fifth emissivitys are determined as the actual emissivity of the pixel. When the fourth and fifth emissivitys are inconsistent, the chip is heated to a sixth temperature, the heating time is increased, and the sixth emissivity of the pixel is determined. It is then determined whether the fourth, fifth, and sixth emissivitys are consistent. If they are consistent, the sixth emissivity is determined as the actual emissivity of the pixel.

[0058] Because heating the chip to the fourth and fifth temperatures may not take long enough to stabilize the chip temperature, potentially leading to inconsistencies between the fourth and fifth emissivity, the heating time is increased when heating the chip to the sixth temperature to allow the chip temperature to stabilize, thereby improving the consistency of multiple emissivity levels.

[0059] Figure 3 This is a flowchart illustrating the determination of the actual emissivity of each pixel in a chip according to an embodiment of the present invention. The flowchart may specifically include:

[0060] Step S302: The infrared camera acquires the first radiation amount of each pixel at the fourth temperature; for each pixel, the fourth emissivity of the pixel at the fourth temperature is determined according to the blackbody radiation amount corresponding to the fourth temperature and the first radiation amount of the pixel at the fourth temperature.

[0061] Step S304: The infrared camera collects the first radiation amount of each pixel at the fifth temperature; for each pixel, the fifth emissivity of the pixel at the fifth temperature is determined according to the blackbody radiation amount corresponding to the fifth temperature and the first radiation amount of the pixel at the fifth temperature.

[0062] Step S306: When the fourth and fifth emissivity of the pixel are consistent, the fourth emissivity is determined to be the actual emissivity of the pixel; when the fourth and fifth emissivity of the pixel are inconsistent, the chip is heated to a sixth temperature, and the process jumps to step S304, until multiple emissivityes are consistent. For example, the fourth or fifth emissivity and the sixth emissivity are consistent.

[0063] The above steps S302-S306 involve measuring the emissivity of each pixel on the chip multiple times to obtain a precise emissivity cloud map of each pixel.

[0064] Step S108: The infrared camera is used to collect the second radiation amount of each pixel of the chip in the working state;

[0065] In this embodiment, during the process of acquiring the first and second radiation amounts of each pixel using the infrared camera, the position of each pixel remains unchanged. That is, during the testing process, the test bench and the chip are kept stationary, including keeping the absolute positions of the infrared camera and the chip stationary.

[0066] In one embodiment, the chip being in an operational state indicates that the chip is powered on and a heat dissipation device is installed for heat dissipation. The heat dissipation device is in an operational state; if the heat dissipation device is a liquid cooling device located above the chip, the fluid circulation system of the liquid cooling device is activated to dissipate heat through the liquid cooling device; if it is a TEC (Transmission Controlled Cooling Device), heat dissipation is achieved through the TEC.

[0067] Step S110: Determine the blackbody radiation of each pixel in the working state based on the second radiation amount of each pixel and the actual emissivity, and determine the temperature corresponding to the blackbody radiation of each pixel in the working state based on the correspondence between the blackbody radiation amount and temperature, and use it as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution.

[0068] In this embodiment, determining the blackbody radiation of each pixel in the working state based on the second radiation amount of each pixel and the actual emissivity includes: dividing the second radiation amount of each pixel by the actual emissivity of that pixel to obtain the blackbody radiation of that pixel in the working state.

[0069] Following step S110 above, the method further includes: using data processing software, an infrared image can be generated for chip thermal analysis based on the pixel temperature value and pixel size.

[0070] Through steps S102 to S110 above, based on infrared thermal imaging technology, an infrared camera is used to directly photograph the back of the exposed chip. The infrared emissivity of the chip is obtained by pixel-by-pixel calibration through constant-temperature heating. Then, a specific heat dissipation scheme is used at the same field of view, and the chip is photographed while it is powered on. The calibrated infrared emissivity is substituted into the photographed radiation amount, so that the true temperature distribution map of the chip can be obtained. This can solve the problem in related technologies where the emissivity of each pixel of the chip is regarded as the same emissivity, resulting in a large error between the measured temperature and the actual temperature of the chip. Thus, the temperature distribution of the chip can be accurately measured when it is powered on. Furthermore, the method for measuring the chip powermap temperature distribution in this embodiment also has the following beneficial effects: 1. It adopts pixel-by-pixel calibration, resulting in higher measurement accuracy. It can directly complete the temperature measurement of the chip powermap and can be used to replace the existing methods of measuring case temperature and calculating power consumption thermal resistance using thermocouples, as well as the method of measuring chip temperature using T-sensors; 2. When the number of T-sensors in the chip is insufficient, the actual temperature distribution of the chip can be obtained in real time, providing a basis for optimizing the chip layout; 3. It can accurately identify the junction temperature of the chip, avoiding potential over-temperature hazards.

[0071] This invention also provides a device for measuring the temperature distribution of a chip power map, the device including an infrared camera and a data processing program;

[0072] The infrared camera is used to collect the radiation of a blackbody at multiple different first temperatures;

[0073] The data processing program is used to determine the correspondence between blackbody radiation and temperature;

[0074] The infrared camera is also used to collect the first radiation amount of each pixel of the chip at multiple different second temperatures;

[0075] The data processing program is further configured to, for each of the pixels, determine the first emissivity of the pixel at the second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature, thereby obtaining a plurality of first emissivity of each pixel corresponding one-to-one with the plurality of different second temperatures; and determine the actual emissivity of each pixel based on the plurality of first emissivity of each pixel.

[0076] The infrared camera is also used to collect the second radiation amount of each pixel of the chip when it is in operation;

[0077] The data processing program is further configured to determine the blackbody radiation of each pixel in the working state based on the second radiation amount of each pixel and the actual emissivity, and to determine the temperature corresponding to the blackbody radiation of each pixel in the working state based on the correspondence between the blackbody radiation amount and temperature, as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution.

[0078] In this embodiment of the invention, the device further includes a printed circuit board (PCB) located below the chip, for supplying power to the chip during operation.

[0079] In one embodiment, the device further includes a semiconductor cooler (TEC) located below the chip for controlling the temperature of the chip to reach the plurality of different second temperatures and for dissipating heat from the chip during operation.

[0080] In this embodiment of the invention, TEC is used to heat and dissipate heat from the chip, which simplifies the test structure, avoids pixel shifts caused by switching test environments, and does not interfere with the infrared radiation during the test, thus avoiding measurement errors.

[0081] Figure 4 This is a schematic diagram of an apparatus for measuring the powermap temperature distribution of a chip according to an embodiment of the present invention. Figure 1 ,like Figure 4 As shown, the measuring device includes: an infrared camera lens 101, a PCB 201, and a TEC 301. In addition, for ease of understanding, a chip 202 and an infrared radiation quantity 203 are also shown.

[0082] Among them, the infrared camera lens 101 is used to receive the infrared radiation of the chip under test 202; the PCB 201 is located below the chip and realizes the power supply and signal transmission of the chip 202; the chip 202 is to be tested by infrared to obtain the temperature cloud map of each pixel in its working state; the infrared radiation 203 increases its radiation after the temperature of the chip 202 rises; and the TEC 301 is used to heat and dissipate heat at a constant temperature for the chip 202.

[0083] It should be noted that, Figure 4 This illustration only shows the overall layout of the measuring device. For the sake of brevity, some details are not shown. This is not the specific structure in the actual test. Other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0084] Based on the above-mentioned measuring device, this embodiment of the invention also provides a measuring method operating on the measuring device. Before the measuring process, the temperature and infrared radiation of the infrared camera are calibrated by default. The measuring process is as follows:

[0085] (1) A TEC module is set on the back of the PCB board. The TEC can realize chip heating and heat dissipation;

[0086] (2) First, use TEC to heat the PCB board so that the chip temperature reaches a certain temperature. The chip temperature can be measured by thermocouple or other temperature measurement methods.

[0087] (3) The infrared emissivity cloud map of the chip can be obtained by dividing the infrared radiation of each pixel in step (2) measured by the camera by the blackbody calibration radiation of the problem in step (2) measured by the camera.

[0088] (4) Keep the test bench and chip position absolutely still, reverse the TEC power supply, and use the cooling mode to dissipate heat from the chip. The chip is powered on and working normally. The camera takes an infrared cloud image of the chip. Substitute this image into the infrared emissivity cloud image calibration in step (3) to obtain the chip infrared cloud image.

[0089] In another embodiment, the device further includes a hot plate located below the chip and a liquid cooling device located above the chip, wherein the hot plate is used to control the temperature of the chip to reach the plurality of different second temperatures, and the liquid cooling device is used to dissipate heat from the chip during operation.

[0090] In one embodiment, the liquid cooling device includes at least one of the following: a cooling liquid, an oil cooling shell, and a transmission window, wherein the transmission window is located above the chip and in rigid contact with the chip, and the oil cooling shell is located around the chip to restrict the flow of the cooling liquid around the chip and to seal it.

[0091] In this embodiment of the invention, an infrared transmission window is used in rigid contact with the chip, which avoids measurement errors caused by liquid during testing. A heat dissipation device using liquid-cooled liquid, a transmission window, and an oil-cooled housing dissipates heat from the chip, preventing pixel shifts caused by changes in the testing environment and avoiding interference with the infrared radiation levels during testing, thus preventing measurement errors.

[0092] Figure 5 This is a schematic diagram of an apparatus for measuring the powermap temperature distribution of a chip according to an embodiment of the present invention. Figure 2 ,like Figure 5 As shown, the measuring device includes: an infrared camera lens 101, a PCB 201, a heating block 401, an oil cooling shell 402, an oil cooling liquid 403, and a transmission 404. In addition, for ease of understanding, a chip 202 and an infrared radiation quantity 203 are also shown.

[0093] The system includes an infrared camera lens 101 for receiving infrared radiation from the chip 202 under test; a PCB 201 located below the chip 202 for power supply and signal transmission; the chip 202 undergoing infrared testing to obtain temperature cloud maps of each pixel under its operating state; infrared radiation 203 increasing as the chip 202 temperature rises; a heating block 401 for heating the chip 202 at a constant temperature; an oil cooling shell 402 for restricting the flow of oil cooling liquid 403 around the chip 202; oil cooling liquid 403 for convective heat exchange with the transmission window 404 for heat dissipation; and the transmission window 404 for rigid contact with the chip 202 for heat dissipation.

[0094] It should be noted that, in addition to TEC, liquid cooling liquid, and transmission window heat dissipation in the embodiments of the present invention, other forms of heat dissipation devices may also be used, such as air cooling, low-temperature fluorinated liquid heat dissipation, etc.

[0095] This invention also provides a measurement method operating on the above-mentioned measuring device. Before the measurement process, the temperature and infrared radiation of the infrared camera are calibrated by default. The specific measurement process is as follows:

[0096] (1) Fix a heating block on the back of the PCB board. The heating block is used for chip constant temperature testing.

[0097] (2) First, a heating block can be used to heat the PCB board so that the chip temperature reaches a certain temperature. The chip temperature can be measured by thermocouple or other temperature measurement methods.

[0098] (3) The infrared emissivity cloud map of the chip can be obtained by dividing the infrared radiation of each pixel in step (2) measured by the camera by the blackbody calibration radiation of the problem in step (2) measured by the camera.

[0099] (4) Keep the test bench and chip position absolutely still, start the fluid circulation system to dissipate heat from the chip. The chip is powered on and working normally. The camera takes an infrared cloud image of the chip. Substitute this image into the infrared emissivity cloud image calibration in step (3) to obtain the chip infrared cloud image.

[0100] The main technologies in this invention are summarized as follows: 1. The method for measuring the chip powermap temperature distribution in this invention, through pixel-by-pixel calibration, can accurately measure the chip powermap temperature distribution. The testing method is simple and has few measurement steps. 2. This invention proposes a method and device for measuring the chip powermap temperature distribution, constructing a complete chip infrared thermal testing process, covering the testing method, testing device, heating and cooling devices for the tested chip, and data processing methods. 3. Two heat dissipation devices are proposed: one uses TEC to heat and dissipate heat from the chip, simplifying the testing structure and avoiding pixel shifts caused by switching testing environments, thus avoiding interference with the infrared radiation during testing and resulting in measurement errors; the other uses a liquid-cooled liquid, transmission window, and oil-cooled shell heat dissipation device for the chip. The infrared transmission window makes rigid contact with the chip under test, avoiding pixel shifts caused by switching testing environments, thus avoiding interference with the infrared radiation during testing and resulting in measurement errors. 4. The chip temperature measurement method in this invention can accurately identify and locate the hotspot distribution and temperature value of the chip, quantify the hotspot size, and identify heat dissipation risks, which is superior to traditional thermal testing methods.

[0101] The measurement method and measurement device in this embodiment of the invention can intuitively obtain the temperature distribution on the chip surface, make up for the shortcomings of insufficient T-sensor arrangement in the chip, accurately identify chip hot spots, and can be used for chip thermal measurement analysis. By comparing with the powermap simulation results, the accuracy of power consumption input can be evaluated, providing basic data for chip mass production.

[0102] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for measuring the temperature distribution of a chip's power map, characterized in that, The method includes: The radiation of a blackbody at multiple different initial temperatures is collected using an infrared camera to determine the correlation between blackbody radiation and temperature. The infrared camera chip acquires the first radiation amount of each pixel at multiple different second temperatures; For each pixel, the first emissivity of the pixel at the second temperature is determined based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature. Thus, a plurality of first emissivity of each pixel corresponding to the plurality of different second temperatures are obtained. The actual emissivity of each pixel is determined based on the plurality of first emissivity of each pixel; The infrared camera collects the second radiation level of each pixel of the chip when it is in operation. The blackbody radiation of each pixel in the working state is determined based on the second radiation amount of each pixel and the actual emissivity, and the temperature corresponding to the blackbody radiation of each pixel in the working state is determined based on the relationship between each temperature and the blackbody radiation amount, and is used as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution. The determination of the actual emissivity of each pixel based on the plurality of first emissivity includes: For each pixel, when the plurality of first emissivity of the pixel is consistent, the plurality of first emissivity is determined to be the actual emissivity of the pixel; For each pixel, when the plurality of first emissivity of that pixel is inconsistent, the second temperature is changed until the plurality of first emissivity of that pixel is consistent.

2. The measurement method according to claim 1, characterized in that, For each pixel, when the plurality of first emissivityes of that pixel are inconsistent, the second temperature is changed until the plurality of first emissivityes are consistent, including: For each pixel, when the plurality of first emissivityes of that pixel are inconsistent, the second temperature is changed and the heating time is increased until the plurality of first emissivityes are consistent.

3. The measurement method according to claim 1, characterized in that, Determining the first emissivity of a pixel at a given second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at that second temperature includes: The first emissivity of the pixel at each of the plurality of different second temperatures is obtained by dividing the blackbody radiation corresponding to each second temperature by the first radiation of the pixel at that second temperature.

4. The measurement method according to claim 1, characterized in that, Determining the blackbody radiation of each pixel in the operating state based on the second radiation of each pixel and the actual emissivity includes: The blackbody radiation of a pixel in the operating state is obtained by dividing the second radiation amount of each pixel by the actual emissivity of that pixel.

5. The measurement method according to claim 1, characterized in that, The chip is a chip with the back opaque material removed, and the material includes at least one of the following: thermally conductive interface material (TIM), cover liquid, and molding compound; The chip being in working state indicates that the chip is powered on and a heat dissipation device is installed for heat dissipation.

6. The measurement method according to claim 1, characterized in that, During the process of acquiring the first radiation amount and the second radiation amount of each pixel through the infrared camera, the position of each pixel remains unchanged.

7. The measurement method according to claim 1, characterized in that, The infrared camera is a mid-wave infrared camera.

8. The measurement method according to claim 1, characterized in that, The multiple different second temperatures are controlled by a semiconductor cooler (TEC) located below the chip, through which the chip dissipates heat during operation.

9. The measurement method according to claim 1, characterized in that, The multiple different second temperatures are controlled by a hot plate located below the chip, and the chip dissipates heat through a liquid cooling device located above the chip during operation.

10. A device for measuring the temperature distribution of a chip's power map, characterized in that, The device includes an infrared camera and a data processing program; The infrared camera is used to collect the radiation of a blackbody at multiple different first temperatures; The data processing program is used to determine the correspondence between blackbody radiation and temperature; The infrared camera is also used to collect the first radiation amount of each pixel of the chip at multiple different second temperatures; The data processing program is further configured to determine the first emissivity of each pixel at the second temperature based on the blackbody radiation corresponding to each of the plurality of different second temperatures and the first radiation of the pixel at the second temperature, thereby obtaining a plurality of first emissivity of each pixel corresponding to the plurality of different second temperatures. For each pixel, when the plurality of first emissivity of the pixel is consistent, the plurality of first emissivity is determined to be the actual emissivity of the pixel; For each pixel, when the plurality of first emissivity of that pixel is inconsistent, the second temperature is changed until the plurality of first emissivity of that pixel is consistent; The infrared camera is also used to collect the second radiation amount of each pixel of the chip when it is in operation; The data processing program is further configured to determine the blackbody radiation of each pixel in the working state based on the second radiation amount of each pixel and the actual emissivity, and to determine the temperature corresponding to the blackbody radiation of each pixel in the working state based on the correspondence between the blackbody radiation amount and temperature, as the temperature of each pixel in the working state, thereby obtaining the chip powermap temperature distribution.

11. The measuring device according to claim 10, characterized in that, The device also includes a semiconductor cooler (TEC) located below the chip, used to control the temperature of the chip to reach the plurality of different second temperatures and to dissipate heat from the chip during operation.

12. The measuring device according to claim 10, characterized in that, The device also includes a hot plate located below the chip and a liquid cooling device located above the chip, wherein the hot plate is used to control the temperature of the chip to reach the plurality of different second temperatures, and the liquid cooling device is used to dissipate heat from the chip during operation.

13. The measuring device according to claim 12, characterized in that, The liquid cooling device includes at least one of the following: a cooling liquid, an oil cooling shell, and a transmission window, wherein the transmission window is located above the chip and in rigid contact with the chip, and the oil cooling shell is located around the chip to restrict the flow of the cooling liquid around the chip and to seal it.

14. The measuring device according to claim 10, characterized in that, The device also includes a printed circuit board (PCB) located below the chip for supplying power to the chip during operation.

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