Magnetic storage cells and arrays

Abstract

The application provides a magnetic storage unit and a magnetic storage array, the magnetic storage unit comprising a spin-orbit torque layer, a plurality of magnetic tunnel junctions arranged on the spin-orbit torque layer, a plurality of auxiliary flipping structures arranged under the spin-orbit torque layer, a projection of the magnetic tunnel junction in a vertical direction being all or partially overlapped with the corresponding auxiliary flipping structure; by controlling the electric potential of the top of the first magnetic tunnel junction and the bottom of the corresponding first auxiliary flipping structure, the corresponding first auxiliary flipping structure generates an auxiliary magnetic field, and the data writing of the corresponding first magnetic tunnel junction is realized; and / or, by controlling the electric potential of the top of the second magnetic tunnel junction and the bottom of the corresponding second auxiliary flipping structure, the corresponding second auxiliary flipping structure does not generate an auxiliary magnetic field, and the corresponding second magnetic tunnel junction is not written with data. In this way, by arranging a plurality of auxiliary flipping structures corresponding to the magnetic tunnel junction under the spin-orbit torque layer, the selectivity of the non-type magnetic random memory is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a magnetic storage cell and a magnetic storage array. Background Technology

[0002] Magnetic random access memory (MRAM) based on the spin orbital torque (SOT) effect is limited in terms of storage density. Therefore, NAND-type magnetic random access memory has advantages such as high storage density, low power consumption, and fast read / write speed, and is widely used.

[0003] In the storage cells of NAND-type magnetic random access memory, multiple magnetic tunnel junctions (MTJs) are placed on the spin orbital moment. By applying a write voltage to the spin orbital moment and simultaneously applying a voltage-controlled magnetic anisotropy (VCMA) or spin-transfer torque (STT) voltage to the top and bottom terminals of a specific MTJ, data writing to a specific magnetic tunnel junction can be achieved.

[0004] However, NAND magnetic random access memory (RAM) has multiple magnetic tunnel junction structures in its storage cells. In actual writing, if the voltage-controlled magnetic anisotropy or spin-transfer torque effect is weak, mis-gating may occur, which makes the gating performance of NAND RAM challenging. Summary of the Invention

[0005] This application provides a magnetic storage cell and a magnetic storage array that can improve the selectivity of NAND magnetic random access memory.

[0006] In a first aspect, this application provides a magnetic storage cell, including a spin orbital layer, a plurality of magnetic tunnel junctions disposed on the spin orbital layer, and a plurality of auxiliary flip structures disposed below the spin orbital layer, wherein the projection of the magnetic tunnel junctions in the vertical direction overlaps with the corresponding auxiliary flip structures in whole or in part.

[0007] By controlling the potential at the top of the first magnetic tunnel junction and the bottom of its corresponding first auxiliary flip structure, the corresponding first auxiliary flip structure generates an auxiliary magnetic field, thereby enabling data writing to the corresponding first magnetic tunnel junction; and / or, by controlling the potential at the top of the second magnetic tunnel junction and the bottom of its corresponding second auxiliary flip structure, the corresponding second auxiliary flip structure does not generate an auxiliary magnetic field, thereby preventing data from being written to the corresponding second magnetic tunnel junction.

[0008] In one possible implementation, when the easy magnetization axis of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin-orbit moment layer, data writing to the corresponding first magnetic tunnel junction is achieved by controlling the potentials at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same; conversely, data writing to the corresponding second magnetic tunnel junction is prevented by controlling the potentials at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be different. Alternatively...

[0009] When the easy magnetization axis of the magnetic tunnel junction is neither parallel nor perpendicular to the direction of the write current flowing through the spin-orbit moment layer, data writing to the corresponding first magnetic tunnel junction is achieved by controlling the potential at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same; conversely, data writing to the corresponding second magnetic tunnel junction is achieved by controlling the potential to be different from that at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure. Alternatively...

[0010] When the easy magnetization axis of the magnetic tunnel junction is perpendicular to the direction of the write current flowing through the spin orbital moment layer, data writing to the corresponding first magnetic tunnel junction is achieved by controlling the potentials at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be different. Data writing to the corresponding second magnetic tunnel junction is achieved by controlling the potentials at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be the same.

[0011] In one possible implementation, the auxiliary flipping structure includes a first non-magnetic layer, a magnetic layer, and a second non-magnetic layer stacked sequentially from top to bottom along a vertical direction.

[0012] In each auxiliary flip structure, the first non-magnetic layer, the magnetic layer, and the second non-magnetic layer partially or completely overlap with the orthographic projection of the corresponding magnetic tunnel junction in the vertical direction.

[0013] In one possible implementation, the thickness of the first non-magnetic layer is greater than or equal to the thickness of the second non-magnetic layer.

[0014] In one possible implementation, when the potentials at the top of the magnetic tunnel junction and the bottom of its corresponding auxiliary flip structure are the same, the magnetic moment direction of the magnetic layer is perpendicular; or...

[0015] When the potentials at the top of the magnetic tunnel junction and the bottom of its corresponding auxiliary flip structure are different, the magnetic moment direction of the magnetic layer is neither horizontal nor vertical.

[0016] In one possible implementation, the magnetic tunnel junction includes a reference layer, a barrier layer, and a free layer stacked vertically from top to bottom.

[0017] Specifically, when the easy magnetization axis of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin orbital moment layer, the thickness of the magnetic layer is set to a first thickness, which is simultaneously smaller than the thicknesses of the free layer and the reference layer; or...

[0018] When the easy magnetization axis of the magnetic tunnel junction is perpendicular to the direction of the write current flowing through the spin orbital moment layer, the thickness of the magnetic layer is set to a second thickness, which is simultaneously greater than the thicknesses of the free layer and the reference layer; or...

[0019] When the easy magnetization axis of the magnetic tunnel junction is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer, the thickness of the magnetic layer is set to a third thickness, which is greater than the first thickness and less than the second thickness.

[0020] In one possible implementation, the overlapping area of ​​the magnetic tunnel junction and the auxiliary flip structure in the vertical direction is greater than or equal to half of the vertical projection area of ​​the magnetic tunnel junction.

[0021] In one possible implementation, it also includes a plurality of top electrodes disposed at the top of the magnetic tunnel junction and a plurality of bottom electrodes disposed at the bottom of the auxiliary flip structure;

[0022] The top electrode is electrically connected to the top of the corresponding magnetic tunnel junction, and the bottom electrode is electrically connected to the bottom of the corresponding auxiliary flip structure.

[0023] In one possible implementation, a voltage control circuit electrically connected to the magnetic storage cell is also included;

[0024] The voltage control circuit includes multiple type-1 switching transistors; the type-1 switching transistors are electrically connected to the top of their respective magnetic tunnel junctions;

[0025] Specifically, by controlling the first type of switch to be in the on state, the potentials at the top of its corresponding magnetic tunnel junction and the bottom of its auxiliary flip structure are made the same; or,

[0026] By controlling the first type of switch to be in the off state, the potentials at the top of the corresponding magnetic tunnel junction and the bottom of the auxiliary flip structure are different.

[0027] This application provides a magnetic storage cell for a non-spin-orbit magnetic random access memory (NAS). An auxiliary flip structure, corresponding to each magnetic tunnel junction (MTJ), is provided beneath the spin-orbit layer. By controlling the potential at the top of the MTJ and the bottom of its corresponding auxiliary flip structure, the auxiliary flip structure can be configured to generate or not generate an auxiliary flip magnetic field. For example, when the easy magnetization axis of the MTJ is parallel to the direction of the write current flowing through the spin-orbit layer, the auxiliary flip magnetic field is vertical; when they are neither parallel nor perpendicular, the auxiliary flip magnetic field is vertical; and when they are perpendicular, the auxiliary flip magnetic field is horizontal. When a write current flows through the spin-orbit layer, the first MTJ corresponding to the auxiliary flip structure that generates the auxiliary flip magnetic field can be deterministically written to due to the combined effects of the spin-orbit effect and the auxiliary flip magnetic field. The second MTJ corresponding to the auxiliary flip structure that does not generate an auxiliary magnetic field can be deterministically not written to because it is only affected by the spin-orbit effect and not by the auxiliary flip magnetic field. This allows for improved accuracy of the magnetic tunnel junction by controlling the potential at the top of the magnetic tunnel junction and the bottom of its corresponding auxiliary flip structure, thereby enhancing the selectivity of the NAND-type spin-orbit magnetic random access memory.

[0028] In a second aspect, this application provides a magnetic storage array, including a plurality of magnetic storage cells arranged in a matrix as described in the first aspect and / or various possible embodiments of the first aspect, a first control signal line corresponding to and electrically connected to the magnetic storage cells, and a second control signal line corresponding to and electrically connected to the top of each magnetic tunnel junction.

[0029] Specifically, by controlling the potential of the first control signal line, the first magnetic storage cell where the first magnetic tunnel junction and / or the second magnetic tunnel junction are located is put into a data-read-write state, and the second magnetic storage cell of the first magnetic tunnel junction and / or the second magnetic tunnel junction is put into a data-unreadable state.

[0030] By controlling the potential of the second control signal line corresponding to the first magnetic storage unit, the potential of the top of the magnetic tunnel junction and the bottom of the auxiliary flip structure are controlled, so that the first magnetic tunnel junction can write and read data, while the second magnetic tunnel junction cannot write and read data.

[0031] This application provides a magnetic storage array. In the magnetic storage array of a NAND spin-orbit magnetic random access memory (NRAM), by controlling the potential of a first control signal line corresponding to the magnetic storage cell to be written, the first magnetic storage cell containing a first magnetic tunnel junction and / or a second magnetic tunnel junction is selected, allowing the first magnetic storage cell to read and write data. Conversely, if a first magnetic storage cell where the first magnetic tunnel junction and / or the second magnetic tunnel junction is not located is not selected, the second magnetic storage cell is not read or written, thus achieving precise selection of the magnetic storage cell. After selecting the first magnetic storage cell, by controlling the potential of a second control signal line, the first magnetic storage cell is selected to read and write data, and / or the second magnetic storage cell is not selected to prevent read and write data, thereby achieving precise selection of the magnetic tunnel junction on the magnetic storage cell to be written. By first selecting the magnetic storage cell to be read and written, and then selecting the magnetic tunnel junction to be read and written, deterministic read and write operations of the NAND spin-orbit magnetic random access memory can be achieved more precisely, thereby further improving the read and write selectivity of the NAND spin-orbit magnetic random access memory. Attached Figure Description

[0032] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0033] Figure 1 A schematic diagram of the structure of a storage cell of a conventional NAND magnetic random access memory provided in this application embodiment;

[0034] Figure 2 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 1 ;

[0035] Figure 3 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 2 ;

[0036] Figure 4 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 3 ;

[0037] Figure 5 This application provides a schematic diagram of an auxiliary flip structure in a magnetic storage cell.

[0038] Figure 6 This is a schematic diagram of a magnetic tunnel junction and auxiliary flip structure in a magnetic storage cell provided in an embodiment of this application;

[0039] Figure 7 A schematic diagram of a magnetic storage cell provided in this application, showing that the easy magnetization axis of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin orbital moment layer;

[0040] Figure 8 A schematic diagram of a single magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 1 ;

[0041] Figure 9 A schematic diagram of the direction of write current flowing through the spin orbital layer in a magnetic storage cell provided in this application embodiment. Figure 1 ;

[0042] Figure 10 A schematic diagram of the magnetic moment direction of a magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 1 ;

[0043] Figure 11 A schematic diagram of a magnetic storage cell provided in this application, showing that the easy magnetization axis of the magnetic tunnel junction is perpendicular to the direction of the write current flowing through the spin orbital moment layer;

[0044] Figure 12 This application provides a schematic diagram of the structure of a magnetic tunnel junction and its corresponding auxiliary flip-flop structure in a single magnetic storage cell. Figure 2 ;

[0045] Figure 13 A schematic diagram of the direction of write current flowing through the spin orbital layer in a magnetic storage cell provided in this application embodiment. Figure 2 ;

[0046] Figure 14 This application provides a schematic diagram of the magnetic moment direction of a magnetic tunnel junction and its corresponding auxiliary flip structure in a magnetic storage cell. Figure 2 ;

[0047] Figure 15 A schematic diagram of a magnetic storage cell provided in this application, in which the easy magnetization axis of the magnetic tunnel junction is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer;

[0048] Figure 16 A schematic diagram of the direction of write current flowing through the spin orbital layer in a magnetic storage cell provided in this application embodiment. Figure 3 ;

[0049] Figure 17 This is a schematic diagram of a single magnetic tunnel junction and its corresponding auxiliary flipping structure with electrodes provided in an embodiment of this application;

[0050] Figure 18 A schematic diagram illustrating the connection relationship between the control circuit and the magnetic storage unit in an embodiment of this application;

[0051] Figure 19 A schematic diagram illustrating the connection relationship between the control circuit and the magnetic storage unit in another magnetic storage unit provided in this application embodiment;

[0052] Figure 20 This is a schematic diagram of the structure of a magnetic storage array provided in an embodiment of this application.

[0053] Figure label:

[0054] 10: Spin-orbit rectangle layer; 20: Magnetic tunnel junction; 201: Reference layer; 202: Barrier layer; 203: Free layer; 204: Top electrode; a: First end of the spin-orbit rectangle layer; b: Second end of the spin-orbit rectangle layer; 30: Auxiliary flip structure; 301: First non-magnetic layer; 302: Magnetic layer; 303: Second non-magnetic layer; 304: Bottom electrode;

[0055] S1: First switch transistor; S2: Second switch transistor; S3: Third switch transistor; S4: Fourth switch transistor; S5: Fifth switch transistor;

[0056] 21: First sub-magnetic tunnel junction; : Top of the first sub-magnetic tunnel junction; 31: First sub-auxiliary flip structure; c: The bottom of the first sub-auxiliary flip structure; c: The top of the first sub-auxiliary flip structure;

[0057] 22: Second sub-magnetic tunnel junction; : Top of the second sub-magnetic tunnel junction; 32: Second sub-auxiliary flip structure; d: The bottom of the second sub-auxiliary flip structure; d: The top of the second sub-auxiliary flip structure;

[0058] 23: Third sub-magnetic tunnel junction; : Top of the third sub-magnetic tunnel junction; 33: Third sub-auxiliary flip structure; e: The bottom of the third sub-auxiliary flip structure; e: The top of the third sub-auxiliary flip structure;

[0059] 24: Fourth sub-magnetic tunnel junction; : Top of the fourth sub-magnetic tunnel junction; 34: Fourth sub-auxiliary flip structure; f: The bottom of the fourth sub-auxiliary flip structure; f: The top of the fourth sub-auxiliary flip structure;

[0060] 101: First magnetic storage unit; 102: Second magnetic storage unit; 103: Third magnetic storage unit; 104: Fourth magnetic storage unit; 105: Fifth magnetic storage unit; 106: Sixth magnetic storage unit; 107: Seventh magnetic storage unit; 108: Eighth magnetic storage unit;

[0061] RBL1: First read line; WBL1: First write line; WWL1: First write line; RWL1: First read line; RWL2: Second read line; RWL3: Third read line; RWL4: Fourth read line; SL1: First source line.

[0062] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0063] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0064] With the continuous development of memory, spin-orbit-torque magnetic random access memory (STT-MRAM) has emerged as a promising technology due to its advantages of fast write speed and low power consumption. It utilizes the spin Hall effect of a heavy metal layer (such as β-W / Ta) to physically isolate the write current path from the read path, thus solving the read / write interference and magnetic tunnel junction aging problems found in traditional spin-transfer-torque magnetic random access memory (STT-MRAM).

[0065] However, magnetic random access memory (MRM) has a relatively low storage density because each storage cell includes a magnetic tunnel junction.

[0066] Based on the storage cells of magnetic random access memory (RAM), a NAND-type RAM storage cell is proposed, which can effectively improve storage density. Figure 1 This is a schematic diagram of the structure of a storage cell of an existing NAND magnetic random access memory provided in an embodiment of this application.

[0067] like Figure 1 As shown, the storage cell of the NAND magnetic random access memory includes a spin-orbit matrix layer 10 and multiple magnetic tunnel junctions 20. The multiple magnetic tunnel junctions 20 are disposed on the spin-orbit matrix layer 10. By gating the multiple magnetic tunnel junctions 20, the writing and reading of specific bits of data can be realized.

[0068] However, the selectivity of NAND magnetic random access memory (RAM) cells is limited by the following two factors:

[0069] (1) Limitations of voltage-controlled magnetic anisotropy. Specifically, in the cell structure of certain NAND-type magnetic random access memories, for example, in in-plane magnetized systems (such as the CoFeB / MgO interface), the efficiency of the electric field in controlling the perpendicular magnetic anisotropy (PMA) is limited by the VCMA coefficient. This is especially true for in-plane devices, which may lead to insufficient switching voltage margin between adjacent magnetic tunnel junctions 20. As the number of magnetic tunnel junctions 20 increases, it becomes difficult to achieve precise bit selection, which may result in the accidental writing of unselected bits or the failure to write bits intended for selection.

[0070] (2) The contradiction of spin-torque-assisted process. Specifically, although the spin-torque effect can increase the selection current density by miniaturizing the diameter of the magnetic tunnel junction 20, the etching process of the nanoscale magnetic tunnel junction 20 is prone to pinhole defects in the barrier layer, resulting in a low process yield.

[0071] Therefore, NAND-type magnetic random access memory has the problem of low selectivity of its storage cells.

[0072] Based on this, this application provides a magnetic storage cell, including a spin-orbit moment layer, multiple magnetic tunnel junctions disposed on the spin-orbit moment layer, and multiple auxiliary flip structures disposed below the spin-orbit moment layer. The projection of the magnetic tunnel junctions in the vertical direction overlaps with the corresponding auxiliary flip structures in whole or in part. By controlling the potential of the top of the first magnetic tunnel junction and the bottom of the corresponding first auxiliary flip structure, the corresponding first auxiliary flip structure generates an auxiliary magnetic field, thereby enabling data writing to the corresponding first magnetic tunnel junction. And / or, by controlling the potential of the top of the second magnetic tunnel junction and the bottom of the corresponding second auxiliary flip structure, the corresponding second auxiliary flip structure does not generate an auxiliary magnetic field, thereby preventing data from being written to the corresponding second magnetic tunnel junction.

[0073] In this way, in the magnetic storage cells of a NAND-type spin-orbit magnetic random access memory, an auxiliary flip structure corresponding to each magnetic tunnel junction is set under the spin-orbit layer. By controlling the potential at the top of the magnetic tunnel junction and the bottom of its corresponding auxiliary flip structure, the auxiliary flip structure can be made to generate or not generate an auxiliary flip magnetic field. For example, when the easy magnetization axis of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin-orbit layer, the auxiliary flip magnetic field is vertical; when they are neither parallel nor perpendicular, the auxiliary flip magnetic field is vertical; when they are perpendicular, the auxiliary flip magnetic field is horizontal. When a write current is passed through the spin-orbit layer, the first magnetic tunnel junction corresponding to the auxiliary flip structure that generates the auxiliary flip magnetic field can deterministically write data because it is affected by the superposition of the spin-orbit effect and the auxiliary flip magnetic field. The second magnetic tunnel junction corresponding to the auxiliary flip structure that does not generate an auxiliary magnetic field can deterministically not write data because it is only affected by the spin-orbit effect and not by the auxiliary flip magnetic field. This allows for improved accuracy of selective writing of the magnetic tunnel junction by controlling the potential at the top of the magnetic tunnel junction and the bottom of its corresponding auxiliary flip structure, thereby enhancing the selectivity of the NAND-type spin-orbit magnetic random access memory.

[0074] It should be noted that the first magnetic tunnel junction represents the magnetic tunnel junction that needs to be written to, and the second magnetic tunnel junction represents the magnetic tunnel junction that does not need to be written to, and is not used to limit the number or order of magnetic tunnel junctions. Similarly, the corresponding auxiliary flip structure is not used to limit the number or order of auxiliary flip structures.

[0075] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0076] In this application, the magnetic storage unit includes a spin-orbit matrix layer, a plurality of magnetic tunnel junctions disposed on the spin-orbit matrix layer, and a plurality of auxiliary flip structures disposed below the spin-orbit matrix layer.

[0077] The positional relationship between the magnetic tunnel junction and the spin-orbit moment layer is as follows: Figure 1 As shown. Therefore, in the following embodiments, the magnetic tunnel junction 20 and the spin-orbit moment layer 10 are still used to represent them.

[0078] For example, the magnetic tunnel junctions 20 in the magnetic storage cell correspond one-to-one with the auxiliary flip-flops, meaning the number of magnetic tunnel junctions 20 is the same as the number of auxiliary flip-flops. Each magnetic tunnel junction 20 can also correspond to one or more auxiliary flip-flops, meaning the number of magnetic tunnel junctions 20 can be less than the number of auxiliary flip-flops. It is only necessary to ensure that each magnetic tunnel junction 20 corresponds to at least one auxiliary flip-flop, and that the projection of the magnetic tunnel junction 20 in the vertical direction fully or partially overlaps with the corresponding auxiliary flip-flop. This increases the flexibility in setting the number of auxiliary flip-flops, thereby improving design flexibility.

[0079] For example, the projection of the magnetic tunnel junction 20 in the vertical direction does not overlap with its non-corresponding auxiliary flipping structure.

[0080] In this way, when the first auxiliary flip structure generates an auxiliary magnetic field, it can be ensured that the auxiliary magnetic field only acts on the first magnetic tunnel junction and not on the second magnetic tunnel junction, thereby avoiding the false flipping of the magnetic tunnel junction 20 that does not need to be written, thus improving the write accuracy and further improving the selectivity of the NAND-type spin-orbit magnetic random access memory.

[0081] For example, the case where the projection of the magnetic tunnel junction 20 in the vertical direction completely overlaps with the corresponding auxiliary flipping structure can be seen in [reference needed]. Figure 2 As shown, Figure 2 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 1 .

[0082] like Figure 2 As shown, the projection of each magnetic tunnel junction 20 in the magnetic storage cell and its corresponding auxiliary flip structure 30 in the vertical direction are completely overlapped.

[0083] In this way, when the projection of the magnetic tunnel junction 20 in the vertical direction is completely overlapped with the corresponding auxiliary flip structure 30, the auxiliary magnetic field generated by the auxiliary flip structure 30 will completely act on the first magnetic tunnel junction. At this time, the better the auxiliary flip effect on the first magnetic tunnel junction, the more beneficial it is to improve the writing accuracy of the first magnetic tunnel junction, and thus the better it is to improve the write selectivity of the magnetic storage cell.

[0084] For example, when the projection of the magnetic tunnel junction 20 in the vertical direction partially overlaps with the corresponding auxiliary flip structure 30, the overlapping area of ​​the orthographic projections of the magnetic tunnel junction 20 and the auxiliary flip structure 30 in the vertical direction is greater than or equal to half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction. For example, the overlapping area of ​​the orthographic projections of the magnetic tunnel junction 20 and the auxiliary flip structure 30 in the vertical direction is 50%, 60%, 70%, 80%, or 90% of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction. In practical applications, the setting can be adjusted according to actual needs, and will not be listed one by one here.

[0085] Figure 3 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 2 .

[0086] like Figure 3 As shown, the overlapping area of ​​the orthographic projection of the magnetic tunnel junction 20 and the auxiliary flipping structure 30 in the vertical direction is equal to half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction.

[0087] The embodiments in this application are only for reference. Figure 3 This example is provided for illustration and does not constitute any limitation.

[0088] Thus, it is necessary to ensure that the overlapping area of ​​the orthographic projections of the two in the vertical direction is half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction. Only in this way can the auxiliary magnetic field generated by the auxiliary flip structure 30 be sufficient to assist in flipping the free layer magnetic moment of the corresponding magnetic tunnel junction 20, thereby ensuring the writing of data to the magnetic tunnel junction 20 that needs to be written, thereby improving the writing accuracy of the magnetic tunnel junction 20, and thus improving the write selectivity of the magnetic storage cell.

[0089] The above Figure 2 and Figure 3 In the example, the projection of each magnetic tunnel junction 20 in the magnetic storage cell onto the corresponding auxiliary flip structure 30 in the vertical direction has the same area.

[0090] Optionally, the areas of the vertical projections of each magnetic tunnel junction 20 in the magnetic storage cell and the corresponding auxiliary flip structure 30 may also be different, as can be seen in [reference needed]. Figure 4 As shown, Figure 4 A schematic diagram of the structure of a magnetic storage unit provided in an embodiment of this application. Figure 3 .

[0091] exist Figure 4 In the process, the areas of the projection of each magnetic tunnel junction 20 in the vertical direction and the corresponding auxiliary flip structure 30 overlap may be the same or different, but the overlapping area of ​​the orthographic projection of any magnetic tunnel junction 20 and the auxiliary flip structure 30 in the vertical direction is greater than or equal to half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction.

[0092] In this way, by setting the overlapping area of ​​the orthographic projection of the magnetic tunnel junction 20 and the corresponding auxiliary flip structure 30 in the vertical direction to be greater than or equal to half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction, the auxiliary flip structure 30 can provide sufficient auxiliary magnetic field for the corresponding magnetic tunnel junction 20 to assist the magnetic tunnel junction 20 in flipping, thereby improving the selectivity of the magnetic storage cell. At the same time, it can also improve design flexibility.

[0093] In the magnetic storage unit described above, a potential can be applied to the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30. By controlling the potential of the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30, data can be written to the magnetic tunnel junction 20.

[0094] In this application, by controlling the potential at the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30, the potential at the top and bottom of the auxiliary flip structure 30 can be controlled, thereby controlling whether the auxiliary flip structure 30 generates an auxiliary magnetic field or not.

[0095] Therefore, the magnetic storage cell provided in this application provides an auxiliary flip structure 30 for each magnetic tunnel junction 20 below the spin-orbit matrix 10. This allows control of the potential at the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30 to control whether the auxiliary flip structure 30 generates an auxiliary magnetic field. When the auxiliary flip structure 30 generates an auxiliary magnetic field, data is written to the corresponding magnetic tunnel junction 20; when no auxiliary magnetic field is generated, no data is written to the corresponding magnetic tunnel junction 20. In other words, by controlling the potential at the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30, the selection of the magnetic tunnel junction 20 is achieved, resulting in higher selectivity for the magnetic storage cell.

[0096] The auxiliary flipping structure 30 described in the above embodiments will now be described in detail.

[0097] As follows Figure 5 As shown, the auxiliary flipping structure 30 includes a first non-magnetic layer 301, a magnetic layer 302, and a second non-magnetic layer 303 stacked sequentially from top to bottom along the vertical direction.

[0098] For example, the first non-magnetic layer 301 and the second non-magnetic layer 303 can be magnesium oxide (MgO), aluminum oxide (MgO), or magnesium oxide (MgO). ), hafnium oxide ( The magnetic layer 302 can be any of the following: a cobalt-iron-boron alloy (CoFeB) or other materials. The embodiments of this application do not specifically limit the materials of the non-magnetic layer and the magnetic layer.

[0099] In each auxiliary flip structure 30, the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 partially or completely overlap with the orthographic projection of the corresponding magnetic tunnel junction 20 in the vertical direction.

[0100] Thus, when the potential difference between the top and bottom of the auxiliary flip structure 30 is not zero, the magnetic moment of the magnetic layer 302 changes from the tilt direction of the static magnetic moment to the vertical direction, thereby generating or not generating an auxiliary magnetic field. Both the first non-magnetic layer 301 and the second non-magnetic layer 303 are structures that assist in changing the magnetic moment of the magnetic layer 302. Furthermore, the first non-magnetic layer 301 is an insulating material used to separate the magnetic layer 302 from the spin orbital moment layer 10. When a write current is applied to the spin orbital moment layer 10, it prevents the write current from leaking into the magnetic layer 302, thereby avoiding the influence of the write current on the auxiliary magnetic field, and further improving write accuracy and the selectivity of the spin orbital moment magnetic random access memory.

[0101] For example, the potential difference between the top and bottom of the auxiliary flip structure 30 is zero, and the static magnetic moment direction of the magnetic layer 302 is a tilted direction that is neither horizontal nor vertical. In this way, setting the static magnetic moment direction of the magnetic layer 302 to a tilted direction is beneficial to improving the magnetic moment flipping efficiency of the magnetic layer 302, thereby improving the generation efficiency of the auxiliary magnetic field and thus improving the writing efficiency.

[0102] The orthographic projection of the first non-magnetic layer 301, magnetic layer 302, and second non-magnetic layer 303 in the auxiliary flip structure 30 onto the corresponding magnetic tunnel junction 20 in the vertical direction can include the following two possible implementations:

[0103] One possible implementation is that the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 in the auxiliary flip structure 30 completely coincide with the orthographic projection of the corresponding magnetic tunnel junction 20 in the vertical direction, as described above. Figure 2 As shown, it will not be elaborated further here.

[0104] It should be noted that when the first non-magnetic layer 301, magnetic layer 302, and second non-magnetic layer 303 in the auxiliary flip structure 30 are projected vertically onto the corresponding magnetic tunnel junction 20 as described above... Figure 2 When all layers are superimposed, the orthographic projections of the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 in the vertical direction are completely superimposed.

[0105] Another possible implementation is that the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 in the auxiliary flip structure 30 partially overlap with the orthographic projection of the corresponding magnetic tunnel junction 20 in the vertical direction. This can be seen in [reference needed]. Figure 3 , Figure 4 Or the following Figure 5 As shown.

[0106] It should be noted that, Figure 3 and Figure 4As shown, the orthographic projections of the first non-magnetic layer 301, magnetic layer 302, and second non-magnetic layer 303 in the vertical direction completely overlap, and the overlapping area is greater than or equal to half of the orthographic projection area of ​​the magnetic tunnel junction 20 in the vertical direction. The orthographic projections of the first non-magnetic layer 301, magnetic layer 302, and second non-magnetic layer 303 in the auxiliary flip structure 30 with their corresponding magnetic tunnel junctions 20 in the vertical direction are as described above. Figure 2 The figures shown partially overlap.

[0107] Figure 5 This is a schematic diagram of an auxiliary flipping structure in a magnetic storage cell provided in an embodiment of this application.

[0108] like Figure 5 As shown, the first non-magnetic layer 301, the magnetic layer 302 and the second non-magnetic layer 303 in the auxiliary flip structure 30 partially overlap in the vertical direction, and the overlapping area is greater than or equal to half of the vertical projection area of ​​the magnetic tunnel junction 20.

[0109] The embodiments in this application are only for reference. Figure 5 The example shown is illustrated by the fact that the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 in the auxiliary flipping structure 30 partially overlap in the vertical direction, and does not constitute any limitation.

[0110] In this way, by stacking the first non-magnetic layer 301, the magnetic layer 302, and the second non-magnetic layer 303 vertically from top to bottom in the auxiliary flip structure 30, the potential at the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30 can be controlled, thereby controlling whether the auxiliary flip structure 30 generates an auxiliary magnetic field to control whether data is written.

[0111] For example, in the auxiliary flip structure 30, the thickness of the first non-magnetic layer 301 is greater than or equal to the thickness of the second non-magnetic layer 303.

[0112] In practical applications, the thickness of the first non-magnetic layer 301 and the difference between the thickness of the second non-magnetic layer 303 can be set according to actual needs, and no specific limitation is made here.

[0113] In this way, by setting the thickness of the first non-magnetic layer 301 to be greater than or equal to the thickness of the second non-magnetic layer 303, i.e., the first non-magnetic layer 301 is thicker, it can isolate the write current when a write current is applied to the spin-orbit layer 10, thereby further reducing the impact of the write current on the leakage current of the magnetic layer 302. Meanwhile, the second non-magnetic layer 303 is thinner, which can improve the generation efficiency of the auxiliary magnetic field of the magnetic layer 302, thereby improving the write efficiency and saving costs.

[0114] In this application, the structure of the magnetic tunnel junction 20 in the magnetic storage cell can be found in [reference needed]. Figure 6 As shown, Figure 6 This is a schematic diagram of a magnetic tunnel junction and auxiliary flip structure in a magnetic storage cell provided in an embodiment of this application.

[0115] like Figure 6 As shown, the magnetic tunnel junction 20 in the magnetic storage cell includes a reference layer 201, a barrier layer 202 and a free layer 203 stacked sequentially from top to bottom in the vertical direction.

[0116] It should be understood that Figure 6 Is Figure 5 Based on this, the structure of the magnetic tunnel junction 20 is explained in detail.

[0117] It should be noted that the thickness of the magnetic layer 302 in the auxiliary flip structure 30 is related to the thickness of the reference layer 201 and the thickness of the free layer 203 of the corresponding magnetic tunnel junction 20.

[0118] For example, when the easy magnetization axis direction of the magnetic tunnel junction 20 in the magnetic storage cell is different from the direction of the write current flowing through the spin-orbit layer 10, the thickness of the magnetic layer 302 in the auxiliary flip structure 30 is different. The easy magnetization axis direction of the magnetic tunnel junction 20 in the magnetic storage cell and the direction of the write current flowing through the spin-orbit layer 10 can be either parallel, perpendicular, or neither parallel nor perpendicular. The thickness of the magnetic layer 302 in the auxiliary flip structure 30 corresponding to the magnetic tunnel junction 20 in each of these three possible types will be explained below.

[0119] One possible implementation is that when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, the thickness of the magnetic layer 302 can be set to a first thickness. This first thickness is simultaneously less than the thickness of the free layer 203 and the thickness of the reference layer 201.

[0120] In this embodiment, the thickness of the first thickness, the thickness of the free layer 203, and the thickness of the reference layer 201 are not limited.

[0121] Thus, when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the horizontal direction. Since the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 are affected by the film thickness, and the thickness of the film with the horizontal magnetic moment direction is less than the thickness of the film with the tilted magnetic moment direction which is neither horizontal nor vertical, and the thickness of the film with the vertical magnetic moment direction is greater than the thickness of the film with the tilted magnetic moment direction which is neither horizontal nor vertical, when the first thickness is less than the thickness of both the free layer 203 and the reference layer 201, the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 can be guaranteed to be in the required direction, thereby improving the writing accuracy.

[0122] Another possible implementation is that when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the thickness of the magnetic layer 302 is set to a second thickness, which is greater than both the thickness of the free layer 203 and the thickness of the reference layer 201.

[0123] In this embodiment, the second thickness, the thickness of the free layer 203, and the thickness of the reference layer 201 are not limited.

[0124] Thus, when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the vertical direction. Since the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 are affected by the film thickness, and the thickness of the film with the magnetic moment direction in the horizontal direction is less than the thickness of the film with the magnetic moment direction in the inclined direction which is neither horizontal nor vertical, and the thickness of the film with the magnetic moment direction in the vertical direction is greater than the thickness of the film with the magnetic moment direction in the inclined direction which is neither horizontal nor vertical, when the second thickness is greater than the thickness of the free layer 203 and the reference layer 201, the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 can be guaranteed to be in the required direction, thereby improving the writing accuracy.

[0125] Another possible implementation is that when the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the thickness of the magnetic layer 302 is set to a third thickness, which is greater than the first thickness and less than the second thickness.

[0126] In this embodiment, the thickness of the third thickness, the thickness of the free layer 203, and the thickness of the reference layer 201 are not limited.

[0127] Thus, when the easy magnetization axis of the magnetic tunnel junction 20 is in an inclined state that is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the horizontal direction. Since the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 are affected by the film thickness, and the thickness of the film with the magnetic moment direction in the horizontal direction is less than the thickness of the film with the magnetic moment direction in the inclined direction (i.e., neither horizontal nor vertical), and the thickness of the film with the magnetic moment direction in the vertical direction is greater than the thickness of the film with the magnetic moment direction in the inclined direction (i.e., neither horizontal nor vertical), when the third thickness is greater than the first thickness and less than the second thickness, the static magnetic moment directions of the magnetic layer 302, the free layer 203, and the reference layer 201 can be guaranteed to be in the required direction, thereby improving the writing accuracy.

[0128] In summary, since the easy magnetization axis direction of the magnetic tunnel junction 20 in the magnetic storage cell is in a different state from the direction of the write current flowing through the spin orbital layer 10, the thickness of the magnetic layer 302 in the auxiliary flip structure 30 is set so that the magnetic field generated by the magnetic layer 302 in the auxiliary flip structure 30 can play an auxiliary role for the corresponding magnetic tunnel junction 20, so as to help the corresponding magnetic tunnel junction 20 flip, thereby improving the selectivity of the magnetic storage cell.

[0129] Based on the above description of the structure of the magnetic storage cell, the following will explain how to control whether to write data when the easy magnetization axis direction of the magnetic tunnel junction 20 in the magnetic storage cell and the direction of the write current flowing through the spin orbital layer 10 are in three different states.

[0130] One possible implementation is that when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, data writing to the corresponding first magnetic tunnel junction is achieved by controlling the potentials at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same, and data not being written to the corresponding second magnetic tunnel junction is achieved by controlling the potentials at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be different.

[0131] When the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital layer 10, the direction of the easy magnetization axis of the magnetic tunnel junction 20 and the direction of the write current flowing through the spin orbital layer 10 can be seen from [reference needed]. Figure 7 As shown.

[0132] Figure 7 This is a schematic diagram of a magnetic storage cell provided in this application, showing that the easy magnetization axis of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin orbital layer.

[0133] The structure between a single magnetic tunnel junction 20, a single auxiliary flip structure 30, and a spin-orbit moment layer 10 is as follows: Figure 8 As shown. Figure 8 A schematic diagram of a single magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 1 .

[0134] Combination Figure 7 and Figure 8 As shown, when the direction of the write current flowing through the spin orbital moment layer 10 is parallel to the easy magnetization axis of the magnetic tunnel junction 20 of the magnetic storage cell, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the horizontal direction. The magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is neither perpendicular nor parallel to the direction of the write current flowing through the spin orbital moment layer 10.

[0135] Therefore, when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, if the magnetic tunnel junction 20 is used as the first magnetic tunnel junction, controlling the data writing to the first magnetic tunnel junction can include: controlling the potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same, and the potentials of the top and bottom ends of the first auxiliary flip structure to be different, that is, generating a potential difference between the top and bottom ends of the first auxiliary flip structure, generating an equivalent leakage magnetic field, that is, an auxiliary flip magnetic field, so that the magnetic moment direction of the magnetic layer 302 is perpendicular, thereby realizing the data writing of the corresponding first magnetic tunnel junction.

[0136] Conversely, if the magnetic tunnel junction 20 is used as the second magnetic tunnel junction, controlling the data not to be written to the second magnetic tunnel junction may include: controlling the potential at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be different, the potentials at the top and bottom ends of the second auxiliary flip structure to be the same, the second auxiliary flip structure not generating an auxiliary flip magnetic field, and the magnetic moment direction of the magnetic layer 302 being neither perpendicular nor parallel to the writing current direction of the spin orbit moment layer 10, thereby achieving the corresponding data not being written to the second magnetic tunnel junction.

[0137] In this way, the first magnetic tunnel junction can be selected so that data is written to it, while the second magnetic tunnel junction can be deselected so that no data is written to it.

[0138] The following explanation uses a magnetic storage unit comprising four magnetic tunnel junctions 20 as an example.

[0139] Figure 9 A schematic diagram of the direction of write current flowing through the spin orbital matrix in a magnetic storage cell provided in this application embodiment. Figure 1 .

[0140] like Figure 9 As shown, the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital layer 10.

[0141] When the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital layer 10, the structure of the magnetic memory cell can be referenced. Figure 10 As shown, Figure 10 A schematic diagram of the magnetic moment direction of a magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 1 .

[0142] exist Figure 10 In the diagram, the first magnetic tunnel junction from left to right is the first magnetic tunnel junction. By controlling the potential at the top of the first magnetic tunnel junction and the bottom of the corresponding first auxiliary flip structure to be the same, the magnetic moment direction of the magnetic layer 302 of the first auxiliary flip structure corresponding to the first magnetic tunnel junction can be controlled to be vertical, thus making the first magnetic tunnel junction selected, thereby achieving 100% selection and data writing of the first magnetic tunnel junction. By controlling the potential at the top of the second magnetic tunnel junction and the bottom of the corresponding second auxiliary flip structure to be the same, the magnetic moment direction of the magnetic layer 302 of the second auxiliary flip structure corresponding to the second magnetic tunnel junction (i.e., other magnetic tunnel junctions besides the first magnetic tunnel junction) can be controlled to be a tilted direction that is neither horizontal nor vertical, thus making the second magnetic tunnel junction unselected, thereby achieving 100% deselection and no data writing of the second magnetic tunnel junction.

[0143] Thus, when the magnetic moment direction of the free layer 203 is horizontal and the magnetic moment direction of the magnetic layer 302 is vertical, the generated auxiliary magnetic field can 100% reverse the magnetic moment direction of the free layer 203, thereby achieving the selection of the first magnetic tunnel junction and the deterministic writing of data. However, when the magnetic moment direction of the magnetic layer 302 is an inclined direction that is neither horizontal nor vertical, since the component of the magnetic moment direction along the vertical direction is small and the component along the horizontal direction is large, the generated auxiliary magnetic field is insufficient to reverse the magnetic moment direction of the free layer 203, thus ensuring that the second magnetic tunnel junction is not selected and no data is written.

[0144] Thus, when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, it is beneficial to improve the selectivity and write accuracy of the NAND-type spin orbital moment magnetic random access memory. Furthermore, compared to conventional NAND-type spin orbital moment magnetic random access memory, the embodiments of this disclosure can improve the magnetic moment reversal efficiency of the free layer 203, thereby improving data write efficiency.

[0145] Another possible implementation is that when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the vertical direction, and the magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is neither perpendicular nor parallel to the direction of the write current flowing through the spin orbital moment layer 10.

[0146] When the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin-orbit layer 10, the direction of the easy magnetization axis of the magnetic tunnel junction 20 and the direction of the write current flowing through the spin-orbit layer 10 can be seen from [reference needed]. Figure 11 As shown.

[0147] Figure 11 This is a schematic diagram of a magnetic storage cell provided in this application, showing that the easy magnetization axis of the magnetic tunnel junction is perpendicular to the direction of the write current flowing through the spin orbital layer.

[0148] The structure between a single magnetic tunnel junction 20, a single auxiliary flip structure 30, and a spin-orbit moment layer 10 is as follows: Figure 12 As shown. Figure 12 A schematic diagram of a single magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 2 .

[0149] Combination Figure 11 and Figure 12 As shown, when the direction of the write current flowing through the spin orbital moment layer 10 is perpendicular to the easy magnetization axis direction of the magnetic tunnel junction 20 of the magnetic storage cell, the direction of the magnetic moment of the magnetic layer 302 in the auxiliary flip structure 30 is neither perpendicular nor parallel to the direction of the write current flowing through the spin orbital moment layer 10.

[0150] Therefore, when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, if the magnetic tunnel junction 20 is used as the first magnetic tunnel junction, controlling the data writing to the first magnetic tunnel junction can include: controlling the potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be different, and the potentials at the top and bottom ends of the first auxiliary flip structure to be the same, that is, there is no potential difference between the top and bottom ends of the first auxiliary flip structure. The first auxiliary flip structure generates an equivalent leakage magnetic field, that is, generates an auxiliary flip magnetic field, so that the magnetic moment direction of the magnetic layer 302 is neither horizontal nor vertical, thereby realizing the data writing of the corresponding first magnetic tunnel junction.

[0151] Conversely, if the magnetic tunnel junction 20 is used as the second magnetic tunnel junction, controlling the data not to be written to the second magnetic tunnel junction may include: controlling the potential at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be the same, the potentials at the top and bottom ends of the auxiliary flip structure 30 to be different, the second auxiliary flip structure not generating an auxiliary flip magnetic field, and the magnetic moment direction of the magnetic layer 302 being perpendicular to the writing current direction of the spin orbit moment layer 10, thereby achieving the corresponding data not being written to the second magnetic tunnel junction.

[0152] In other words, by controlling the potential at the top of the first magnetic tunnel junction and the bottom of the corresponding first auxiliary flip structure to be different, the magnetic moment direction of the magnetic layer 302 of the first auxiliary flip structure corresponding to the first magnetic tunnel junction can be controlled to be a tilted direction that is neither horizontal nor vertical, so that the first magnetic tunnel junction is in a selected state, thereby achieving 100% selection of the first magnetic tunnel junction and data writing. By controlling the potential at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be the same, the magnetic moment direction of the magnetic layer 302 of the second auxiliary flip structure corresponding to the second magnetic tunnel junction (i.e., other magnetic tunnel junctions besides the first magnetic tunnel junction) can be controlled to be in a vertical direction, so that the second magnetic tunnel junction is in a non-selected state, thereby achieving 100% non-selection of the corresponding second magnetic tunnel junction and no data writing.

[0153] Thus, when the magnetic moment direction of the free layer 203 is vertical, and the magnetic moment direction of the magnetic layer 302 is a tilted direction that is neither horizontal nor vertical, the auxiliary reversing magnetic field generated is sufficient to reverse the magnetic moment direction of the free layer 203 because the vertical component of the magnetic moment direction is smaller and the horizontal component is larger. Therefore, the first magnetic tunnel junction is selected 100% and data is written deterministically. However, when the magnetic moment direction of the magnetic layer 302 is vertical, there is no horizontal component, so the auxiliary magnetic field generated is insufficient to reverse the magnetic moment direction of the free layer 203. Therefore, the second magnetic tunnel junction is not selected and no data is written. Thus, when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, it is beneficial to improve the selectivity and write accuracy of the NAND-type spin orbital moment magnetic random access memory. Furthermore, compared to conventional NAND-type spin orbital moment magnetic random access memory, the embodiments of this disclosure can improve the magnetic moment reversing efficiency of the free layer 203, thereby improving data writing efficiency.

[0154] The following explanation uses a magnetic storage unit comprising four magnetic tunnel junctions 20 as an example.

[0155] Figure 13 A schematic diagram of the direction of write current flowing through the spin orbital layer in a magnetic storage cell provided in this application embodiment. Figure 2 .

[0156] like Figure 13 As shown, the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital layer 10.

[0157] When the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital layer 10, the structure of the magnetic memory cell can be referenced. Figure 14 As shown, Figure 14 A schematic diagram of the magnetic moment direction of a magnetic tunnel junction and its corresponding auxiliary flipping structure provided in this application embodiment. Figure 2.

[0158] exist Figure 14 In the diagram, the first magnetic tunnel junction from left to right is the first magnetic tunnel junction. The magnetic moment direction of the magnetic layer 302 of the first auxiliary flip structure corresponding to the first magnetic tunnel junction is neither horizontal nor vertical. The first magnetic tunnel junction is selected, while the second magnetic tunnel junction (i.e., other magnetic tunnel junctions besides the first magnetic tunnel junction) is unselected.

[0159] As can be seen from the foregoing, for a magnetic storage cell in which the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital matrix 10, 100% selection of the first magnetic tunnel junction can be achieved by controlling the potentials at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same.

[0160] Another possible implementation is when the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin-orbit layer 10. The direction of the easy magnetization axis of the magnetic tunnel junction 20 and the direction of the write current flowing through the spin-orbit layer 10 can be seen in [reference needed]. Figure 15 As shown.

[0161] Figure 15 This is a schematic diagram of a magnetic storage cell provided in this application, showing that the easy magnetization axis of the magnetic tunnel junction is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital layer.

[0162] Combination Figure 15 As shown, when the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, the magnetic moment directions of the free layer 203 and the reference layer 201 are set to the horizontal direction, and the magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is neither perpendicular nor parallel to the direction of the write current flowing through the spin orbital moment layer 10.

[0163] Therefore, when the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, if the magnetic tunnel junction 20 is used as the first magnetic tunnel junction, controlling the data writing to the first magnetic tunnel junction can include: controlling the potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same, and the potentials at the top and bottom ends of the first auxiliary flip structure to be different, that is, generating a potential difference at the top and bottom ends of the first auxiliary flip structure, and generating an equivalent leakage magnetic field, that is, an auxiliary flip magnetic field, to realize the data writing of the corresponding first magnetic tunnel junction.

[0164] Conversely, if the magnetic tunnel junction 20 is used as the second magnetic tunnel junction, controlling the data not to be written to the second magnetic tunnel junction may include: controlling the potential at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be different, the potential at the top and bottom ends of the second auxiliary flip structure to be the same, the magnetic moment direction of the magnetic layer 302 being neither perpendicular nor parallel to the writing current direction of the spin orbit moment layer 10, and the second auxiliary flip structure not generating an auxiliary flip magnetic field, thereby achieving the corresponding data not being written to the second magnetic tunnel junction.

[0165] The following explanation uses a magnetic storage unit comprising four magnetic tunnel junctions 20 as an example.

[0166] Figure 16 A schematic diagram of the direction of write current flowing through the spin orbital layer in a magnetic storage cell provided in this application embodiment. Figure 3 .

[0167] like Figure 16 As shown, the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital layer 10.

[0168] In this possible implementation, the structure of the magnetic storage cell is similar to... Figure 10 Similarly, with Figure 10 The difference is that the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital layer 10.

[0169] In this possible implementation, by controlling the potentials at the top of the first magnetic tunnel junction and the bottom of the first auxiliary flip structure to be the same, the magnetic moment direction of the magnetic layer 302 of the first auxiliary flip structure corresponding to the first magnetic tunnel junction can be controlled to be vertical, thus selecting the first magnetic tunnel junction and enabling data writing to the corresponding first magnetic tunnel junction. By controlling the potentials at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure to be different, the magnetic moment direction of the magnetic layer 302 of the first auxiliary flip structure corresponding to the first magnetic tunnel junction can be controlled to be a tilted direction that is neither horizontal nor vertical, thus deselecting the second magnetic tunnel junction and preventing data writing to the corresponding second magnetic tunnel junction.

[0170] Thus, when the magnetic moment direction of the free layer 203 is horizontal and the magnetic moment direction of the magnetic layer 302 is vertical, the auxiliary flipping magnetic field generated can flip the magnetic moment direction of the free layer 203 (but cannot achieve 100% flipping), thereby enabling the selection of the first magnetic tunnel junction and data writing. However, when the magnetic moment direction of the magnetic layer 302 is neither horizontal nor vertical, since the vertical component of this magnetic moment direction is smaller and the horizontal component is larger, the auxiliary magnetic field generated is insufficient to flip the magnetic moment direction of the free layer 203, thus preventing the second magnetic tunnel junction from being selected and data from being written. Therefore, when the easy magnetization axis direction of the magnetic tunnel junction 20 is perpendicular to the direction of the write current flowing through the spin orbital moment layer 10, it is beneficial to improve the selectivity and write accuracy of the NAND-type spin orbital moment magnetic random access memory. Furthermore, compared to conventional NAND-type spin orbital moment magnetic random access memory, the embodiments of this application can improve the magnetic moment flipping efficiency of the free layer 203, thereby improving data writing efficiency.

[0171] It should be noted that, since the magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is neither perpendicular nor parallel to the write current direction of the spin-orbit layer 10, when the potentials at the top of the second magnetic tunnel junction and the bottom of the second auxiliary flip structure are different, the potentials at both ends of the second auxiliary flip structure are the same, and the magnetic moment direction of the magnetic layer 302 is neither perpendicular nor parallel to the write current direction of the spin-orbit layer 10. In this case, the magnetic layer 302 has components in both the vertical and horizontal directions. Therefore, the magnetic layer 302 can provide a small auxiliary magnetic field, which may cause the corresponding magnetic tunnel junction 20 to flip. Therefore, when the easy magnetization axis of the magnetic tunnel junction 20 is perpendicular to the write current direction flowing through the spin-orbit layer 10, the magnetic storage cell cannot achieve 100% selection of the magnetic tunnel junction 20.

[0172] In summary, by setting the auxiliary flip structure 30 corresponding to the magnetic tunnel junction 20, this application can improve the selectivity for any of the above-mentioned types of magnetic storage cells.

[0173] The following describes the specific implementation of the potential control at the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30.

[0174] In this application, references Figure 17 As shown, the magnetic storage cell also includes at least a plurality of top electrodes 204 disposed at the top of the magnetic tunnel junction 20 and a plurality of bottom electrodes 304 disposed at the bottom of the auxiliary flip structure 30.

[0175] The top electrode 204 is electrically connected to the reference layer 201 at the top of the corresponding magnetic tunnel junction 20, and the bottom electrode 304 is electrically connected to the second non-magnetic layer 303 at the bottom of the corresponding auxiliary flip structure 30.

[0176] It should be understood that each magnetic tunnel junction 20 has a corresponding top electrode 204 at its top and each auxiliary flip structure 30 has a corresponding bottom electrode 304 at its bottom.

[0177] Taking the case where the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital layer 10 as an example, Figure 17 This is a schematic diagram of a single magnetic tunnel junction and its corresponding auxiliary flipping structure with electrodes provided in an embodiment of this application.

[0178] Thus, by providing a top electrode 204 electrically connected to the top of the magnetic tunnel junction 20, the potential at the top of the magnetic tunnel junction 20 can be controlled by applying a potential to the top electrode 204. Similarly, by providing a bottom electrode 304 electrically connected to the bottom of the auxiliary flip structure 30, the potential at the top of the magnetic tunnel junction 20 can be controlled by applying a potential to the bottom electrode 304. Compared to conventional NAND-type spin-orbit magnetic random access memory, in this embodiment, each magnetic tunnel junction 20 has four control ports, offering more flexible control. Furthermore, the generation of the auxiliary flip magnetic field can be controlled by controlling the top and bottom electrodes, thereby improving flip efficiency and selectivity.

[0179] In this application, the magnetic storage cell further includes at least a voltage control circuit connected to the magnetic storage cell, as described below. Figures 18 to 20 As shown.

[0180] The voltage control circuit includes at least a plurality of first-type switching transistors, which are electrically connected to the top of their respective magnetic tunnel junctions 20. The first-type switching transistors are also electrically connected to their respective top electrodes 204, thereby achieving electrical connection to the top of the corresponding magnetic tunnel junctions 20.

[0181] For example, the first type of switching transistor can be a MOSFET or other switching transistors. In practical applications, the settings can be adjusted according to actual needs. This application does not limit this.

[0182] By controlling the first type of switch to be in the on state, the potentials at the top of the corresponding magnetic tunnel junction 20 and the bottom of the auxiliary flip structure 30 are the same; or, by controlling the first type of switch to be in the off state, the potentials at the top of the corresponding magnetic tunnel junction 20 and the bottom of the auxiliary flip structure 30 are different.

[0183] It should be noted that when the potentials at the top of the magnetic tunnel junction 20 and the bottom of the auxiliary flip structure 30 are the same, they can both be zero potential or non-zero potential, as long as their potentials are the same. The method to ensure that their potentials are the same can be to directly connect them via a wire, or to control their potentials separately without connecting them via a wire, thus making their potentials the same.

[0184] Taking the easy magnetization axis of the magnetic tunnel junction 20 as parallel to the direction of the write current flowing through the spin orbital layer 10, and using a magnetic storage cell containing four magnetic tunnel junctions 20 as an example, the control circuit will be explained. (See reference...) Figure 18 As shown, Figure 18 This is a schematic diagram illustrating the connection relationship between the control circuit and the magnetic storage unit in an embodiment of this application.

[0185] exist Figure 18 In this configuration, the first type of switching transistor includes a first switching transistor S1, a second switching transistor S2, a third switching transistor S3, and a fourth switching transistor S4. The first magnetic tunnel junction includes a first sub-magnetic tunnel junction 21, and the second magnetic tunnel junction includes a second sub-magnetic tunnel junction 22, a third sub-magnetic tunnel junction 23, and a fourth sub-magnetic tunnel junction 24. The first auxiliary switching structure includes a first sub-auxiliary switching structure 31, and the second auxiliary switching structure includes a second sub-auxiliary switching structure 32, a third sub-auxiliary switching structure 33, and a fourth sub-auxiliary switching structure 34.

[0186] by Figure 18 For example, the static magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is tilted, that is, neither horizontal nor vertical. The bottom of the first sub-auxiliary flip structure... To the bottom of the fourth auxiliary flip structure All potentials are zero. A write current is applied to the first end a and the second end b of the spin-orbit moment layer. When the first sub-magnetic tunnel junction 21 is selected while the second, third, and fourth sub-magnetic tunnel junctions 22, 23, and 24 are not selected, the first switch S1 corresponding to the first sub-magnetic tunnel junction 21 is turned on, and the top of the first sub-magnetic tunnel junction... The potential is zero, and the bottom of the first sub-auxiliary flip structure The potential of the top of the first sub-magnetic tunnel junction The potentials are equal and both are zero. Due to the voltage division of the spin orbital moment layer 10, the top c and bottom of the first sub-auxiliary flip structure are equal. A potential difference is generated between them, which causes the magnetic moment direction of the magnetic layer 302 of the first sub-auxiliary flip structure 31 to become perpendicular. The first sub-auxiliary flip structure 31 generates a perpendicular auxiliary magnetic field, causing the magnetic moment direction of the free layer 203 of the first sub-magnetic tunnel junction 21 to flip. Controlling the second switch S2, the third switch S3, and the fourth switch S4 to all turn off, the top of the second sub-magnetic tunnel junction... To the top of the fourth sub-magnetic tunnel junction The potential is non-zero, and it is related to the bottom of the second sub-auxiliary flip structure. To the bottom of the fourth auxiliary flip structure The potentials of the two components are different, therefore the bottom of the second sub-auxiliary flip structure... To the bottom of the fourth auxiliary flip structure Since the potential difference between the top d of the second sub-auxiliary flip structure and the top f of the fourth sub-auxiliary flip structure is zero, no perpendicular auxiliary magnetic field is generated in the second sub-auxiliary flip structure 32 to the fourth sub-auxiliary flip structure 34, thus the magnetic moment direction of the free layer 203 of the second sub-magnetic tunnel junction 22 to the fourth sub-magnetic tunnel junction 24 does not flip. This allows data to be written to the first sub-magnetic tunnel junction 21 with a 100% write probability, while no data is written to the second sub-magnetic tunnel junction 22 to the fourth sub-magnetic tunnel junction 24 with a 0% write probability.

[0187] When the easy magnetization axis of the magnetic tunnel junction 20 is neither parallel nor perpendicular to the direction of the write current flowing through the spin orbital matrix 10, its control method is the same as when the easy magnetization axis of the magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital matrix 10, except that the probability of writing data to the first sub-magnetic tunnel junction 21 is less than 100%.

[0188] Taking the magnetic tunnel junction 20, whose easy magnetization axis is perpendicular to the direction of the write current flowing through the spin orbital matrix 10, and the magnetic storage cell includes four magnetic tunnel junctions 20 as an example, the control circuit will be explained.

[0189] Figure 19 This is a schematic diagram showing the connection relationship between the control circuit and the magnetic storage unit in another magnetic storage unit provided in an embodiment of this application.

[0190] like Figure 19 As shown, the static magnetic moment direction of the magnetic layer 302 in the auxiliary flip structure 30 is tilted, that is, neither horizontal nor vertical. This is the bottom of the first sub-auxiliary flip structure. To the bottom of the fourth auxiliary flip structure All potentials are zero. A write current is applied to the first end a and the second end b of the spin-orbit moment layer. When the first sub-magnetic tunnel junction 21 is selected while the second, third, and fourth sub-magnetic tunnel junctions 22, 23, and 24 are not selected, the first switch S1 corresponding to the first sub-magnetic tunnel junction 21 is turned off, and the top of the first sub-magnetic tunnel junction... The potential is non-zero, and it is related to the bottom of the first sub-auxiliary flip structure. The potentials (non-zero potentials) are different, and due to the voltage division of the spin orbital moment layer 10, the top c and bottom of the first sub-auxiliary flip structure are affected. No potential difference is generated between them. The zero potential difference between them allows the first sub-auxiliary flip structure 31 to maintain the magnetic moment in the tilt direction. Its horizontal component generates a horizontal auxiliary magnetic field, realizing the flipping of the magnetic moment direction of the free layer 203 of the first sub-magnetic tunnel junction 21. Controlling the second switch S2, the third switch S3, and the fourth switch S4 to all conduct, the top of the second sub-magnetic tunnel junction... To the top of the fourth sub-magnetic tunnel junction The potential is zero, which is the bottom of the second sub-auxiliary flip structure. To the bottom of the fourth auxiliary flip structure The potentials (zero potential) are all the same, therefore the bottom of the second sub-auxiliary flip structure To the bottom of the fourth auxiliary flip structure Since the potential differences between the top d of the second sub-auxiliary flip structure and the top f of the fourth sub-auxiliary flip structure are all non-zero, the magnetic moment directions of the second sub-auxiliary flip structure 32 to the fourth sub-auxiliary flip structure 34 are all vertical, and no horizontal auxiliary magnetic field is generated, thus ensuring that the magnetic moment directions of the free layer 203 of the second sub-magnetic tunnel junction 22 to the fourth sub-magnetic tunnel junction 24 do not flip. This allows data to be written to the first sub-magnetic tunnel junction 21 with a 100% write probability, while no data is written to the second sub-magnetic tunnel junction 22 to the fourth sub-magnetic tunnel junction 24 with a 0% write probability.

[0191] It should be noted that the embodiments in this application are only illustrated by applying zero potential to the top of the magnetic tunnel junction 20, and do not constitute any limitation.

[0192] Optionally, different potentials can be applied to the top of the magnetic tunnel junction 20 according to the direction of the current applied to the spin orbital moment layer 10. The magnitude of the potential applied to the top of the magnetic tunnel junction 20 can decrease sequentially along the current direction, but it must be ensured that the applied potential can enable the auxiliary flip structure 30 to generate an auxiliary magnetic field.

[0193] In this way, the potential of the top of the magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30 can be controlled by a first-class switch in the control circuit, so as to control the selection of the magnetic tunnel junction 20.

[0194] For example, the control circuit also includes a second type of switch. This second type of switch is electrically connected to one end of the spin-orbit layer 10 and is used to control whether a write current is supplied to the spin-orbit layer 10. Specifically, when the second type of switch is in the ON state, a write current is supplied to the spin-orbit layer 10. When the second type of switch is in the OFF state, no write current is supplied to the spin-orbit layer 10. The type of the second type of switch is the same as that of the first type of switch, and will not be described again here.

[0195] In this way, by controlling the on or off of the second type of switch, it is beneficial to control whether the spin orbital layer 10 is supplied with write current, thereby realizing the writing of data to the NAND magnetic random access memory.

[0196] This application embodiment also provides a magnetic storage array, which includes a plurality of magnetic storage cells arranged in a matrix, a first control signal line corresponding to and electrically connected to the magnetic storage cells, and a second control signal line corresponding to and electrically connected to the top of each magnetic tunnel junction 20.

[0197] The embodiments of this application do not specifically limit the number of magnetic storage cells included in the magnetic storage array.

[0198] The magnetic tunnel junctions 20 in the same magnetic storage cell are of the same type. The types of magnetic tunnel junctions 20 in different magnetic storage cells can be the same or different. This application does not limit this.

[0199] By controlling the potential of the first control signal line, the first magnetic storage cell where the first magnetic tunnel junction and / or the second magnetic tunnel junction are located is put into a state of read-write data, and the second magnetic storage cell where the first magnetic tunnel junction and / or the second magnetic tunnel junction are not located is put into a state of unread-write data.

[0200] By controlling the potential of the second control signal line corresponding to the first magnetic storage unit, the potential of the top of the magnetic tunnel junction 20 and the bottom of the auxiliary flip structure 30 is controlled, so that the first magnetic tunnel junction can write and read data, while the second magnetic tunnel junction cannot write and read data.

[0201] In this way, in the magnetic storage array of a NAND-type spin-orbit magnetic random access memory (NRAM), by controlling the potential of the first control signal line corresponding to the magnetic storage cell to be written, the first magnetic storage cell containing the first magnetic tunnel junction and / or the second magnetic tunnel junction is selected, allowing the first magnetic storage cell to read and write data. Conversely, the first magnetic storage cell is not selected if the first magnetic tunnel junction and / or the second magnetic tunnel junction is not present, preventing the second magnetic storage cell from reading and writing data. This allows for precise selection of magnetic storage cells. After selecting the first magnetic storage cell, by controlling the potential of the second control signal line, the first magnetic storage cell is selected to read and write data, and / or the second magnetic storage cell is not selected to prevent it from reading and writing data. This achieves precise selection of the magnetic tunnel junction on the magnetic storage cell to be written. By first selecting the magnetic storage cell to be read and written, and then selecting the magnetic tunnel junction to be read and written, deterministic read and write operations of the NAND-type spin-orbit magnetic random access memory can be achieved more precisely, thereby further improving the read and write selectivity of the NAND-type spin-orbit magnetic random access memory.

[0202] Taking a magnetic storage array comprising 8 magnetic storage cells, each magnetic storage cell including four magnetic tunnel junctions as an example, Figure 20This is a schematic diagram of the structure of a magnetic storage array provided in an embodiment of this application.

[0203] like Figure 20 As shown, the magnetic storage array includes a first magnetic storage unit 101, a second magnetic storage unit 102, a third magnetic storage unit 103, a fourth magnetic storage unit 104, a fifth magnetic storage unit 105, a sixth magnetic storage unit 106, a seventh magnetic storage unit 107, and an eighth magnetic storage unit 108.

[0204] exist Figure 20 In this configuration, the first control signal line includes the first write word line WWL1 and the first write bit line WBL1. The second control signal line includes the first read bit line RBL1, the first read word line RWL1, the second read word line RWL2, the third read word line RWL3, and the fourth read word line RWL4. The second type of switching transistor includes the fifth switching transistor S5.

[0205] The first write bit line WBL1 is electrically connected to one end of the spin-orbit junction layer 10 through the source or drain of the fifth switch S5, and the first source line SL1 is electrically connected to the other end of the spin-orbit junction layer 10. The first write word line WWL1 is electrically connected to the gate of the fifth switch S5 and is used to control the conduction or shutdown of the fifth switch S5. The first read bit line RBL1 is connected to the top of the first sub-magnetic tunnel junction through the source or drain of the first switch S1. Electrical connection, through the source or drain of the second switching transistor S2 to the top of the second sub-magnetic tunnel junction. Electrical connection, through the source or drain of the third switching transistor S3 to the top of the third sub-magnetic tunnel junction. Electrical connection, through the source or drain of the fourth switch S4 to the top of the fourth sub-magnetic tunnel junction. Electrical connections. The first read word line RWL1 is electrically connected to the gate of the first switch S1, used to control the turn-on or turn-off of the first switch S1. The second read word line RWL2 is electrically connected to the gate of the second switch S2, used to control the turn-on or turn-off of the second switch S2. The third read word line RWL3 is electrically connected to the gate of the third switch S3, used to control the turn-on or turn-off of the third switch S3. The fourth read word line RWL4 is electrically connected to the gate of the fourth switch S4, used to control the turn-on or turn-off of the fourth switch S4.

[0206] Furthermore, the electrical connection between the top of each magnetic tunnel junction 20 and the bottom of the corresponding auxiliary flip structure 30 is only one manifestation. In actual applications, the potentials of the two can be controlled separately, which will not be elaborated here.

[0207] by Figure 20 Taking the example where the easy magnetization axis of the medium magnetic tunnel junction 20 is parallel to the direction of the write current flowing through the spin orbital moment layer 10, the read / write operation can include:

[0208] When the first write word line WWL1 is at a high level and the first write bit line WBL1 is at a high level, the fifth switch S5 of the first magnetic storage unit 101 is turned on. At this time, the first magnetic storage unit 101 that needs to be written is selected, and a write current is supplied to the spin orbital layer 10 of the first magnetic storage unit 101, that is, the first magnetic storage unit 101 is selected for a write operation, while the second to eighth magnetic storage units 102 that do not need to be written are not written.

[0209] When the first read word line RWL1 is at a high level and the first read bit line RBL1 is at zero potential, the first switch S1 corresponding to the first sub-magnetic tunnel junction 21 is turned on, the first sub-magnetic tunnel junction 21 in the first magnetic storage unit 101 is selected, and the write operation of the first sub-magnetic tunnel junction 21 is completed.

[0210] When the first write word line WWL1 is at a low level, the first write bit line WBL1 is at a low level, and the first read word line RWL1 and the first read bit line RBL1 are at a high level, the fifth switch S5 of the first magnetic storage unit 101 is turned off, and the first switch S1 is turned on, thus completing the data reading of the first sub-magnetic tunnel junction 21 in the first magnetic storage unit 101.

[0211] In this way, by first selecting the magnetic storage cell that needs to be read and written, and then selecting the magnetic tunnel junction that needs to be read and written, deterministic read and write operations of NAND-type spin-orbit magnetic random access memory can be achieved more accurately, thereby further improving the read and write gating of NAND-type spin-orbit magnetic random access memory.

[0212] The division of units in this application is merely a logical functional division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices, or units, and may be electrical, mechanical, or other forms.

[0213] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0214] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0215] If a function is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0216] Those skilled in the art will understand that all or part of the steps of the above-described method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments; and the aforementioned storage medium includes various media capable of storing program code, such as read-only memory, random access memory, magnetic disks, or optical disks.

[0217] Finally, it should be noted that other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. A magnetic memory cell comprising: The spin-orbit torque layer, a plurality of magnetic tunnel junctions disposed on the spin-orbit torque layer, a plurality of auxiliary flipping structures disposed under the spin-orbit torque layer, the projection of the magnetic tunnel junction in the vertical direction is all or partially overlapped with the corresponding auxiliary flipping structure; The auxiliary flipping structure includes a first non-magnetic layer, a magnetic layer and a second non-magnetic layer stacked in turn along the vertical direction from top to bottom; By controlling the electric potential of the top of the first magnetic tunnel junction and the bottom of the corresponding first auxiliary flipping structure, the electric potential difference between the top and bottom of the first auxiliary flipping structure is controlled, the magnetic moment direction of the magnetic layer is regulated, the corresponding first auxiliary flipping structure generates an auxiliary magnetic field, and the data write of the corresponding first magnetic tunnel junction is realized; And / or, by controlling the electric potential of the top of the second magnetic tunnel junction and the bottom of the corresponding second auxiliary flipping structure, the electric potential difference between the top and bottom of the second auxiliary flipping structure is controlled, the magnetic moment direction of the magnetic layer is regulated, the corresponding second auxiliary flipping structure does not generate an auxiliary magnetic field, and the corresponding second magnetic tunnel junction is not written data.

2. The magnetic memory cell of claim 1, wherein, When the easy axis direction of the magnetic tunnel junction is parallel to the direction of the write current flowing through the spin-orbit torque layer, by controlling the electric potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flipping structure to be the same, the data write of the corresponding first magnetic tunnel junction is realized, and by controlling the electric potential of the top of the second magnetic tunnel junction and the bottom of the second auxiliary flipping structure to be different, the data of the corresponding second magnetic tunnel junction is not written; or, When the easy axis direction of the magnetic tunnel junction is neither parallel nor perpendicular to the direction of the write current flowing through the spin-orbit torque layer, by controlling the electric potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flipping structure to be the same, the data write of the corresponding first magnetic tunnel junction is realized, and by controlling the electric potential of the top of the second magnetic tunnel junction and the bottom of the second auxiliary flipping structure to be different, the data of the corresponding second magnetic tunnel junction is not written; or, When the easy axis direction of the magnetic tunnel junction is perpendicular to the direction of the write current flowing through the spin-orbit torque layer, by controlling the electric potential of the top of the first magnetic tunnel junction and the bottom of the first auxiliary flipping structure to be different, the data write of the corresponding first magnetic tunnel junction is realized, and by controlling the electric potential of the top of the second magnetic tunnel junction and the bottom of the second auxiliary flipping structure to be the same, the data of the corresponding second magnetic tunnel junction is not written.

3. The magnetic memory cell of claim 1 wherein, The first non-magnetic layer, the magnetic layer and the second non-magnetic layer in each auxiliary flipping structure are partially or entirely overlapped with the orthographic projection of the corresponding magnetic tunnel junction in the vertical direction.

4. The magnetic memory cell of claim 3 wherein, The thickness of the first non-magnetic layer is greater than or equal to the thickness of the second non-magnetic layer.

5. The magnetic memory cell of claim 3 wherein, When the electric potential of the top of the magnetic tunnel junction and the bottom of the corresponding auxiliary flipping structure is the same, the magnetic moment direction of the magnetic layer is the vertical direction; or, When the electric potential of the top of the magnetic tunnel junction and the bottom of the corresponding auxiliary flipping structure is different, the magnetic moment direction of the magnetic layer is neither the horizontal direction nor the vertical direction.

6. The magnetic memory cell of claim 3 wherein, The magnetic tunnel junction comprises a reference layer, a barrier layer and a free layer stacked in sequence from top to bottom along the vertical direction; When the easy axis direction of the magnetic tunnel junction and the write current direction through the spin-orbit torque layer are in a parallel state, the thickness of the magnetic layer is set to a first thickness, which is smaller than the thicknesses of the free layer and the reference layer; or, When the easy axis direction of the magnetic tunnel junction and the write current direction through the spin-orbit torque layer are in a perpendicular state, the thickness of the magnetic layer is set to a second thickness, which is greater than the thicknesses of the free layer and the reference layer; or, When the easy axis direction of the magnetic tunnel junction and the write current direction through the spin-orbit torque layer are in neither a parallel state nor a perpendicular state, the thickness of the magnetic layer is set to a third thickness, which is greater than the first thickness and smaller than the second thickness.

7. The magnetic memory cell of claim 1 wherein, The overlapping area of the projection of the magnetic tunnel junction and the auxiliary flipping structure in the vertical direction is greater than or equal to half of the projection area of the magnetic tunnel junction in the vertical direction.

8. The magnetic memory cell of claim 1 wherein, Further comprising a plurality of top electrodes arranged at the top of the magnetic tunnel junction and a plurality of bottom electrodes arranged at the bottom of the auxiliary flipping structure; The top electrode is electrically connected to the top of the corresponding magnetic tunnel junction, and the bottom electrode is electrically connected to the bottom of the corresponding auxiliary flipping structure.

9. The magnetic memory cell of claim 1 wherein, Further comprising a voltage control circuit electrically connected to the magnetic storage unit; The voltage control circuit comprises a plurality of first-type switching tubes; the first-type switching tube is electrically connected to the top of the corresponding magnetic tunnel junction; When the first-type switching tube is in an on state, the potential of the top of the corresponding magnetic tunnel junction and the bottom of the auxiliary flipping structure is the same; or, When the first-type switching tube is in an off state, the potential of the top of the corresponding magnetic tunnel junction and the bottom of the auxiliary flipping structure is different.

10. A magnetic storage array, comprising: The magnetic storage unit comprises a plurality of matrix-arranged magnetic storage units, a first control signal line corresponding to the magnetic storage unit and electrically connected thereto, and a second control signal line corresponding to the top of each magnetic tunnel junction and electrically connected thereto; When the potential of the first control signal line is controlled, the first magnetic storage unit in which the first magnetic tunnel junction and / or the second magnetic tunnel junction is located is in a data read / write state, and the second magnetic storage unit in which the first magnetic tunnel junction and / or the second magnetic tunnel junction is not located is in a data non-read / write state; The potential of the top of the magnetic tunnel junction and the bottom of the auxiliary flipping structure is controlled by controlling the potential of the second control signal line corresponding to the first magnetic storage unit, so that the first magnetic tunnel junction writes and reads data, and the second magnetic tunnel junction does not write and read data.

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