Hafnium oxide-based ferroelectric capacitor device based on crystal face engineered electrode and preparation method and application of hafnium oxide-based ferroelectric capacitor device

Abstract

The invention relates to the technical field of ferroelectric capacitors, in particular to a crystal face engineered electrode-based hafnium oxide-based ferroelectric capacitor and a preparation method and application thereof. The preparation method comprises the following steps: providing a substrate; performing first radio frequency magnetron sputtering treatment on one surface of the substrate to obtain a bottom electrode layer; a hafnium oxide-based ferroelectric layer is arranged on the surface, away from the substrate, of the bottom electrode layer; performing second radio frequency magnetron sputtering treatment on the surface, far away from the bottom electrode layer, of the hafnium oxide-based ferroelectric layer to obtain a top electrode layer; the gas pressure intensity of the first radio frequency magnetron sputtering treatment and the gas pressure intensity of the second radio frequency magnetron sputtering treatment are independently 0.8 mTorr to 1.7 mTorr, and the sputtering power of the first radio frequency magnetron sputtering treatment and the second radio frequency magnetron sputtering treatment is independently 80 W to 200 W. According to the preparation method, the crystal face orientation, the form and the elastic modulus of the electrode are regulated and controlled by changing the growth dynamics process, synergistic solution of interface charge injection, interface chemistry, interface oxygen pressure, interface external stress and the like of the hafnium oxide-based ferroelectric capacitor is achieved under the condition that the electrode is not replaced, and synergistic improvement of ferroelectricity and durability is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of ferroelectric capacitor devices, and in particular to a hafnium oxide-based ferroelectric capacitor device based on a crystal plane engineered electrode, and a preparation method and application thereof. Background Art

[0002] Hafnium-based ferroelectric thin films are a core material for the next generation of ferroelectric memory and have been widely researched. They can be used to fabricate high-density, high-speed, and low-power ferroelectric capacitors and ferroelectric transistors (FeFETs), and are becoming an important development direction for new semiconductor memory devices.

[0003] At present, the cycle durability of hafnium-based ferroelectric capacitors still cannot meet the needs of practical application, and it is even more impossible to replace dynamic random access memory (DRAM) with a nearly infinite lifespan. Different electrodes and their combinations, element doping, interface intercalation, superlattice structures and other methods have been reported to improve the durability of ferroelectric capacitors. However, due to the complex balance between interface charge injection, interface chemistry, oxygen vacancy concentration and their multiple effects on the performance of hafnium-based ferroelectric capacitors, the improvement in their durability is still very limited. Existing methods for electrode optimization mainly focus on different electrodes and their combinations, but this approach will lead to multiple variables, and problems such as interface charge injection, interface chemistry and phase transition degradation fatigue are difficult to solve in a coordinated manner. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present invention provides a hafnium oxide-based ferroelectric capacitor device based on crystal plane engineered electrodes, and its preparation method and application. The preparation method regulates the electrode crystal plane orientation and microstructure by changing the growth kinetics process, and utilizes the anisotropy of the electrode material to achieve the regulation of the electrode's interface potential barrier, oxygen vacancy concentration, etc., thereby achieving a synergistic solution to the interface charge injection, interface chemistry, interface oxygen pressure, and interface out-of-plane stress of the hafnium oxide-based ferroelectric capacitor without replacing the electrode, thereby achieving a synergistic improvement in ferroelectricity and durability.

[0005] To this end, the first aspect of the present invention provides a method for preparing a hafnium oxide-based ferroelectric capacitor device based on a crystal plane engineered electrode, the preparation method comprising the following steps:

[0006] providing a substrate;

[0007] obtaining a bottom electrode layer on one side of the substrate by a first radio frequency magnetron sputtering process;

[0008] Disposing a hafnium oxide-based ferroelectric layer on the surface of the bottom electrode layer away from the substrate;

[0009] A top electrode layer is obtained by performing a second radio frequency magnetron sputtering process on the surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer;

[0010] The gas pressures of the first RF magnetron sputtering process and the second RF magnetron sputtering process are independently 0.8 mTorr-1.7 mTorr, and the sputtering powers are independently 80 W-200 W.

[0011] The preparation method provided by the present invention deposits a top electrode and a bottom electrode on both sides of a hafnium oxide-based ferroelectric layer, respectively, and changes the growth direction of the top electrode and the bottom electrode by controlling the growth kinetic conditions (working gas pressure, sputtering power) of the top electrode and the bottom electrode during magnetron sputtering, thereby obtaining preferentially grown electrode crystal planes and microstructures, thereby improving the interface contact between the electrode layer and the ferroelectric layer, achieving regulation of the electrode / ferroelectric interface barrier height, interface chemistry, interface oxygen pressure and nanomechanical properties, and further achieving regulation of the oxygen vacancy concentration, remanent polarization and cycle durability of the hafnium oxide-based ferroelectric capacitor.

[0012] According to an embodiment of the present invention, the material of the hafnium oxide-based ferroelectric layer includes Hf 1-x M x O2, wherein M includes at least one of Zr, Si, Al, La, Sr, Mg, Y, and Gd, and 0.01≤x≤0.99.

[0013] According to an embodiment of the present invention, the hafnium oxide-based ferroelectric layer is obtained by at least one of atomic layer deposition, magnetron sputtering, and pulsed laser deposition.

[0014] According to an embodiment of the present invention, the bottom electrode layer and the top electrode layer are made of the same material, including anisotropic material.

[0015] According to an embodiment of the present invention, the bottom electrode layer and the top electrode layer are made of the same material, including at least one of titanium nitride, tantalum nitride, and tungsten.

[0016] According to an embodiment of the present invention, the material of the substrate includes at least one of silicon, silicon dioxide, aluminum oxide, lanthanum strontium manganese oxide, strontium titanate, polyimide, and mica.

[0017] According to an embodiment of the present invention, the thickness of the hafnium oxide-based ferroelectric layer is 1 nm-100 nm.

[0018] According to an embodiment of the present invention, the thickness of the bottom electrode layer and the top electrode layer are independently 1 nm-200 nm.

[0019] According to an embodiment of the present invention, the thickness of the substrate is 200 μm-1 mm.

[0020] According to an embodiment of the present invention, the preparation method further comprises: obtaining a top electrode layer by performing a second radio frequency magnetron sputtering process on a surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer, and performing an annealing process.

[0021] According to an embodiment of the present invention, the temperature of the annealing treatment is 400°C-750°C.

[0022] According to an embodiment of the present invention, the annealing treatment time is 10s-60s.

[0023] According to an embodiment of the present invention, the annealing process is performed under an inert atmosphere.

[0024] The second aspect of the present invention provides a hafnium oxide-based ferroelectric capacitor device obtained according to the preparation method described in the first aspect, wherein the (111) / (200) aspect ratio of the top electrode and / or the bottom electrode is (0.95-10):1.

[0025] The hafnium oxide-based ferroelectric capacitor device provided by the present invention optimizes the surface energy, exposed atoms and electronic structure of the electrode surface through crystal plane engineering optimization of the electrode material and utilizes the anisotropy of the electrode material, thereby changing its charge transfer characteristics and antioxidant ability. Ultimately, the electrode-ferroelectric interface barrier is optimized without changing the electrode material, and the problems of charge injection, interface chemistry, and interface oxygen pressure at the hafnium oxide-based ferroelectric capacitor interface are synergistically solved, thereby improving the comprehensive performance of the ferroelectric device.

[0026] The third aspect of the present invention provides the application of the hafnium oxide-based ferroelectric capacitor device obtained according to the preparation method described in the first aspect or the hafnium oxide-based ferroelectric capacitor device described in the second aspect in the fields of advanced storage, logical operations, and brain-like computing.

[0027] The beneficial effects of the present invention compared to the prior art are as follows:

[0028] This invention proposes for the first time the use of a crystal plane engineered electrode strategy to regulate the remnant polarization and cycle durability of hafnium oxide-based ferroelectric capacitors. By adjusting the electrode crystal plane orientation and interface state, a single electrode material can be used to gradually enrich the ferroelectric behavior, effectively controlling the introduction of other variables. This facilitates the coordinated solution of interface charge injection, interface chemistry, interface oxygen pressure, and interface mechanical properties in optimizing the cycle durability of hafnium oxide-based ferroelectric capacitors, thereby synergistically improving the cycle durability of the device. The invention is of great significance for the performance regulation and optimization of ferroelectric devices and will provide important support for the application of ferroelectric devices in advanced storage, logic operations, and brain-like computing.

[0029] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments with reference to the accompanying drawings, in which:

[0031] Figure 1 A schematic structural diagram of a hafnium oxide-based ferroelectric capacitor device provided by the present invention is shown;

[0032] Figure 2 The ferroelectric remanent polarization-voltage curves of the hafnium oxide-based ferroelectric capacitor devices provided in Example 1 and Example 2 of the present invention and Comparative Example 1 and Comparative Example 2 are shown;

[0033] Figure 3 The ferroelectric remanent polarization-cycle number curves of the hafnium oxide-based ferroelectric capacitor devices provided in Example 1, Example 2 and Comparative Examples 1 and 2 of the present invention are shown; wherein, Figure a is a ferroelectric remanent polarization-cycle number curve of the hafnium oxide-based ferroelectric capacitor devices provided in Comparative Examples 1, 2 and Example 2; Figure b is a ferroelectric remanent polarization-cycle number curve of the hafnium oxide-based ferroelectric capacitor device provided in Example 1. DETAILED DESCRIPTION

[0034] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be understood as limiting the present invention.

[0035] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more of such features. Furthermore, in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0036] The endpoints of the ranges and any values ​​disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered to be specifically disclosed herein.

[0037] In order to make the present invention more easily understood, certain technical and scientific terms are specifically defined below. Unless otherwise clearly defined elsewhere in this document, all other technical and scientific terms used herein have the meaning commonly understood by those skilled in the art to which the present invention belongs.

[0038] In this document, the terms “include” or “comprising” are open expressions, that is, including the contents specified in the present invention, but not excluding other contents.

[0039] As used herein, the terms "optionally," "optional," or "optionally" generally mean that the subsequently described event or circumstance may but need not occur, and that the description includes instances where the event or circumstance occurs and instances where it does not.

[0040] According to an embodiment of the present invention, the first aspect of the present invention provides a method for preparing a hafnium oxide-based ferroelectric capacitor device based on a crystal plane engineered electrode, wherein the hafnium oxide-based ferroelectric capacitor device may have Figure 1 The structure shown in FIG. 1 , the preparation method comprises the following steps:

[0041] (1) Provide a substrate.

[0042] According to a specific embodiment of the present invention, the material of the substrate is not particularly limited. As some specific examples, the material of the substrate includes at least one of silicon, silicon dioxide, aluminum oxide, lanthanum strontium manganese oxide, strontium titanate, polyimide, and mica.

[0043] According to a specific embodiment of the present invention, the thickness of the substrate is 200 μm-1 mm. As some specific examples, the thickness of the substrate may be 200 μm, 400 μm, 600 μm, 800 μm, 1 mm, etc.

[0044] (2) A bottom electrode layer is obtained on one side of the substrate by a first radio frequency magnetron sputtering process.

[0045] The gas pressure of the first RF magnetron sputtering process is 0.8 mTorr-1.7 mTorr, and the sputtering power is 80 W-200 W.

[0046] According to a specific embodiment of the present invention, the material of the bottom electrode layer includes an anisotropic material, for example, may include at least one of titanium nitride, tantalum nitride, and tungsten, preferably titanium nitride.

[0047] According to a specific embodiment of the present invention, the thickness of the bottom electrode layer is 1nm-200nm. As some specific examples, the thickness of the bottom electrode layer may be 1nm, 2nm, 5nm, 10nm, 20nm, 50nm, 100nm, 150nm, 200nm, etc.

[0048] (3) A hafnium oxide-based ferroelectric layer is provided on the surface of the bottom electrode layer away from the substrate.

[0049] According to a specific embodiment of the present invention, the material of the hafnium oxide-based ferroelectric layer includes Hf 1-x M x O2, wherein the type of M is not particularly limited. As some specific examples, M includes at least one of Zr, Si, Al, La, Sr, Mg, Y, and Gd, and 0.01≤x≤0.99.

[0050] According to specific embodiments of the present invention, the preparation method of the hafnium oxide-based ferroelectric layer is not particularly limited. As some specific examples, the hafnium oxide-based ferroelectric layer is obtained by at least one of atomic layer deposition, magnetron sputtering, and pulsed laser deposition. Specifically, when using atomic layer deposition, the raw hafnium source can be one of tetrakis(ethylmethylamine)hafnium, tetrakis(dimethylamine)hafnium, and hafnium tetrachloride, and the raw oxygen source can be one of high-purity H2O and ozone.

[0051] According to a specific embodiment of the present invention, the thickness of the hafnium oxide-based ferroelectric layer is 1nm-100nm. As some specific examples, the thickness of the hafnium oxide-based ferroelectric layer may be 1nm, 5nm, 10nm, 20nm, 40nm, 60nm, 80nm, 100nm, etc.

[0052] (4) obtaining a top electrode layer by a second radio frequency magnetron sputtering process on a surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer;

[0053] The gas pressure of the second RF magnetron sputtering process is 0.8 mTorr-1.7 mTorr, and the sputtering power is 80 W-200 W. Preferably, the gas pressure and sputtering power of the first and second RF magnetron sputtering processes are the same.

[0054] According to a specific embodiment of the present invention, the material of the top electrode layer is the same as that of the bottom electrode layer, and includes an anisotropic material, for example, may include at least one of titanium nitride, tantalum nitride, and tungsten, preferably titanium nitride.

[0055] By controlling the gas pressure and sputtering power in the vacuum chamber of the device during RF magnetron sputtering of the bottom and top electrode layers, the crystal growth quality and crystal plane growth direction of the electrode can be changed, thereby regulating the interface contact between the electrode and the ferroelectric layer and improving the performance of the ferroelectric capacitor device. Because the working gas pressure during magnetron sputtering deposition affects the crystal plane orientation and microstructure of the deposited electrode material, the mean free path of the sputtered particles is long at low pressure, and the particles have higher energy when they reach the substrate, which enhances the surface migration ability and forms a dense underlying structure. By controlling the growth gas pressure and power, the micromorphology and surface oxidation state of the electrode can be controlled and the proportion of (111) orientation can be increased. Different crystal plane orientations will result in different contact interface qualities between the ferroelectric layer and the electrode layer. The interface formed by the (111) crystal plane of the electrode material (such as TiN) and the ferroelectric layer is most conducive to the formation of ferroelectricity in hafnium oxide-based ferroelectric capacitor devices.

[0056] According to a specific embodiment of the present invention, the thickness of the top electrode layer is 1nm-200nm. As some specific examples, the thickness of the top electrode layer may be 1nm, 2nm, 5nm, 10nm, 20nm, 50nm, 100nm, 150nm, 200nm, etc.

[0057] According to a specific embodiment of the present invention, the preparation method further comprises: obtaining a top electrode layer by performing a second radio frequency magnetron sputtering process on a surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer, and performing an annealing process.

[0058] According to a specific embodiment of the present invention, the temperature of the annealing treatment is 400°C-750°C. As some specific examples, the temperature of the annealing treatment can be 400°C, 500°C, 600°C, 700°C, 750°C, etc. Specifically, the temperature can be gradually increased to the annealing temperature using a heating rate of 15°C / s-60°C / s. After the annealing treatment is completed, the temperature can be gradually cooled to room temperature using a cooling rate of 10°C / s-60°C / s. The annealing treatment can crystallize the ferroelectric layer material and obtain ferroelectric properties.

[0059] According to a specific embodiment of the present invention, the annealing treatment time is 10s-60s. As some specific examples, the annealing treatment time can be 10s, 20s, 30s, 40s, 50s, 60s, etc.

[0060] According to a specific embodiment of the present invention, the annealing process is performed under an inert atmosphere. Specifically, the inert atmosphere is not particularly limited, and includes but is not limited to a nitrogen atmosphere.

[0061] According to an embodiment of the present invention, the second aspect of the present invention provides a hafnium oxide-based ferroelectric capacitor device obtained according to the preparation method described in the first aspect, wherein the (111) / (200) aspect ratio of the top electrode and / or the bottom electrode is (0.95-10):1.

[0062] The hafnium oxide-based ferroelectric capacitor device provided by the present invention adopts an electrode crystal plane engineering strategy to obtain an optimized electrode-ferroelectric interface by regulating the crystal plane orientation of the electrode material. The optimized crystal plane can form a high interface barrier with the ferroelectric dielectric to reduce interfacial charge injection. Due to the differences in surface energy, exposed atoms and electronic structure of different crystal planes, the charge transfer characteristics and antioxidant capacity of the optimized electrode surface are also different, which can achieve the regulation of the oxygen vacancy concentration in the ferroelectric layer of the hafnium oxide-based ferroelectric capacitor. Due to the differences in grain size and arrangement, the optimized electrode microstructure has different out-of-plane elastic modulus, which can achieve the regulation of non-ferroelectric phase transition in the ferroelectric layer of the hafnium oxide-based ferroelectric capacitor.

[0063] According to an embodiment of the present invention, the third aspect of the present invention provides the application of the hafnium oxide-based ferroelectric capacitor device obtained according to the preparation method described in the first aspect or the hafnium oxide-based ferroelectric capacitor device described in the second aspect in the fields of advanced storage, logical operations, and brain-like computing.

[0064] Below, the scheme of the present invention will be explained in conjunction with embodiment.It will be understood by those skilled in the art that the following examples are only used to illustrate the present invention and should not be regarded as limiting the scope of the present invention.In the embodiment, if specific technology or conditions are not indicated, the technology or conditions described in the literature in this area or the product instructions are used.The reagents or instruments used are not indicated by the manufacturer, and are all conventional products that can be obtained by commercial purchase.

[0065] Example 1

[0066] This embodiment provides a hafnium oxide-based ferroelectric capacitor device and a preparation method thereof, the preparation method comprising the following steps:

[0067] A titanium nitride (TiN) bottom electrode layer with a thickness of 30 nm was deposited on one side of a SiO2 / Si substrate (300 nm / 400 μm) by RF magnetron sputtering at a gas pressure of 1.2 mTorr and a sputtering power of 120 W.

[0068] A hafnium oxide-based ferroelectric layer is formed on the surface of the TiN bottom electrode layer away from the substrate by atomic deposition. The material of the hafnium oxide-based ferroelectric layer is Hf 0.5 Zr 0.5 O2, its thickness is 10nm;

[0069] A TiN top electrode layer is obtained on the surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer by radio frequency magnetron sputtering, wherein the thickness of the TiN top electrode layer is 30 nm, the gas pressure of the radio frequency magnetron sputtering is 1.2 mTorr, and the sputtering power is 120 W;

[0070] Annealing treatment was performed at a temperature of 550° C. for 30 seconds to obtain the hafnium oxide-based ferroelectric capacitor device, wherein the (111) / (200) aspect ratio of the top electrode and the bottom electrode was 1.21.

[0071] The ferroelectric remanent polarization-voltage curve of the hafnium oxide-based ferroelectric capacitor device provided in this embodiment is shown in FIG. Figure 2 As shown, the ferroelectric remanent polarization-cycle number curve is as follows Figure 3 As shown in Figure b.

[0072] Example 2

[0073] The only difference between this embodiment and embodiment 1 is that when preparing the bottom electrode and the top electrode, the gas pressure of the radio frequency magnetron sputtering process is 1.3 mTorr and the sputtering power is 120W.

[0074] The (111) / (200) aspect ratio of the top and bottom electrodes of the hafnium oxide-based ferroelectric capacitor device provided in this embodiment is 1.17, and its ferroelectric remanent polarization-voltage curve is shown in FIG. Figure 2 As shown, the ferroelectric remanent polarization-cycle number curve is as follows Figure 3 As shown in Figure a.

[0075] Comparative Example 1

[0076] The only difference between this comparative example and Example 1 is that when preparing the bottom electrode and the top electrode, the gas pressure of the RF magnetron sputtering treatment is 2 mTorr and the sputtering power is 120 W.

[0077] The (111) / (200) aspect ratio of the top and bottom electrodes of the hafnium oxide-based ferroelectric capacitor device provided in this comparative example is 0.83, and its ferroelectric remanent polarization-voltage curve is shown in FIG. Figure 2 As shown, the ferroelectric remanent polarization-cycle number curve is as follows Figure 3 As shown in Figure a.

[0078] Comparative Example 2

[0079] The only difference between this comparative example and Example 1 is that when preparing the bottom electrode and the top electrode, the gas pressure of the RF magnetron sputtering treatment is 1.8 mTorr and the sputtering power is 120 W.

[0080] The (111) / (200) aspect ratio of the top and bottom electrodes of the hafnium oxide-based ferroelectric capacitor device provided in this comparative example is 0.93, and its ferroelectric remanent polarization-voltage curve is shown in FIG. Figure 2 As shown, the ferroelectric remanent polarization-cycle number curve is as follows Figure 3 As shown in Figure a.

[0081] Result analysis: From Figure 2 and Figure 3 It can be seen that the hafnium oxide-based ferroelectric capacitor devices provided in Comparative Examples 1 and 2 have a cycle number of about 6×10 8 The hafnium oxide-based ferroelectric capacitor device provided in Example 1 has a cycle number of 6×10 10 The time still maintains about 2P r =30μC / cm 2 The residual polarization strength and durability are significantly improved. The hafnium oxide-based ferroelectric capacitor device provided in Example 2 has a cycle number of 6×10 9 It can also maintain about 2P r =30μC / cm 2 The residual polarization intensity.

[0082] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0083] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A method for preparing a hafnium oxide-based ferroelectric capacitor device based on a crystal plane engineered electrode, characterized in that: The preparation method comprises the following steps: providing a substrate; obtaining a bottom electrode layer on one side of the substrate by a first radio frequency magnetron sputtering process; Disposing a hafnium oxide-based ferroelectric layer on the surface of the bottom electrode layer away from the substrate; A top electrode layer is obtained by performing a second radio frequency magnetron sputtering process on the surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer; The gas pressures of the first RF magnetron sputtering process and the second RF magnetron sputtering process are independently 0.8 mTorr-1.7 mTorr, and the sputtering powers are independently 80 W-200 W.

2. The preparation method according to claim 1, characterized in that The material of the hafnium oxide-based ferroelectric layer includes Hf 1- x M x O2, wherein M comprises at least one of Zr, Si, Al, La, Sr, Mg, Y, and Gd, and 0.01≤x≤0.99; Optionally, the hafnium oxide-based ferroelectric layer is obtained by at least one of atomic layer deposition, magnetron sputtering, and pulsed laser deposition.

3. The preparation method according to claim 1, characterized in that The bottom electrode layer and the top electrode layer are made of the same material, including anisotropic material; Optionally, the bottom electrode layer and the top electrode layer are made of the same material, including at least one of titanium nitride, tantalum nitride, and tungsten.

4. The preparation method according to claim 1, characterized in that The material of the substrate includes at least one of silicon, silicon dioxide, aluminum oxide, lanthanum strontium manganese oxide, strontium titanate, polyimide, and mica.

5. The preparation method according to claim 1, characterized in that The thickness of the hafnium oxide-based ferroelectric layer is 1 nm to 100 nm; Optionally, the thickness of the bottom electrode layer and the top electrode layer are independently 1 nm to 200 nm; Optionally, the substrate has a thickness of 200 μm-1 mm.

6. The preparation method according to claim 1, characterized in that The preparation method further comprises: obtaining a top electrode layer by performing a second radio frequency magnetron sputtering process on a surface of the hafnium oxide-based ferroelectric layer away from the bottom electrode layer, and performing an annealing process.

7. The preparation method according to claim 6, characterized in that The annealing temperature is 400°C-750°C; Optionally, the annealing treatment time is 10s-60s.

8. The preparation method according to claim 6, characterized in that The annealing treatment is performed under an inert atmosphere.

9. A hafnium oxide-based ferroelectric capacitor device obtained by the preparation method according to any one of claims 1 to 8, characterized in that: The (111) / (200) aspect ratio of the top electrode and / or the bottom electrode is (0.95-10):

1.

10. Application of the hafnium oxide-based ferroelectric capacitor device obtained by the preparation method according to any one of claims 1 to 8 or the hafnium oxide-based ferroelectric capacitor device according to claim 9 in the fields of advanced storage, logical operations, and brain-like computing.

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