Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device, which is characterized in that the semiconductor device comprises a substrate, at least a first active region and a second active region are formed on the surface of the substrate, the first active region and the second active region are respectively provided with a source electrode region, a drain electrode region and a channel between the source electrode region and the drain electrode region, and an isolation region is arranged between the first active region and the second active region; the insulating layer comprises a first insulating region and a second insulating region which are respectively arranged on the first active region and the second active region; and a gate layer having at least a first gate pattern and a second gate pattern disposed on the first and second insulating regions corresponding to the channels of the first and second active regions, respectively, with a dummy electrode disposed on the isolation region between the first and second gate patterns.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device with a dummy electrode formed on an isolation region and a manufacturing method thereof. Background Art

[0002] CMOS technology is the mainstream process for large-scale integrated circuits (SICs), offering numerous advantages, including low power consumption, high speed, strong anti-interference capabilities, and high integration. MOSFET isolation technologies include LOCOS (Local Oxidation of Silicon) and STI (Shallow Trench Isolation). STI technology offers smaller feature sizes and higher MOS device density than traditional LOCOS isolation technology.

[0003] Figure 1 The technology of isolating each MOS device by STI is shown. Specifically, Figure 1 The semiconductor device 900 includes a substrate 901 having a plurality of active regions 910 formed on its surface. Each active region 910 includes a source region 911, a drain region 912, and a channel 913 therebetween. An isolation region 904 is provided between each active region 910. An insulating layer 902 includes an insulating region 920 provided on each active region 910. A gate layer 903 includes a plurality of gate patterns 930 provided on the insulating region 920 corresponding to the channels of each active region 910. In the semiconductor device 900, the STI can effectively isolate the MOS devices, preventing possible interactions between the MOS devices, such as crosstalk, noise interference, and leakage current between the power supply and ground lines.

[0004] The etching and filling steps in the STI formation process may introduce mechanical stress in the silicon substrate. In addition, the difference in thermal expansion coefficient between the filling material and the silicon substrate may generate thermal stress during heat treatment. These stresses may change the electrical performance of the MOS device.

[0005] Therefore, it is desired to develop a semiconductor device and a manufacturing method thereof that can regulate STI stress to improve the electrical performance of MOS devices. Summary of the Invention

[0006] In view of the above problems, the present invention provides a semiconductor device and a manufacturing method thereof for improving the electrical performance of a MOS device by adjusting STI stress.

[0007] According to one aspect of the present invention, there is provided a semiconductor device, characterized in that it includes: a substrate, on the surface of which at least a first active region and a second active region are formed, the first and second active regions respectively having a source region, a drain region and a channel therebetween, and an isolation region is provided between the first and second active regions; an insulating layer, including first and second insulating regions respectively provided on the first and second active regions; a gate layer, having at least a first gate pattern and a second gate pattern, which are respectively provided on the first and second insulating regions corresponding to the channels of the first and second active regions, and a dummy electrode located on the isolation region is provided between the first and second gate patterns.

[0008] In some embodiments, the arrangement direction of the first and second gate patterns is set to a first direction, and the length of the dummy electrode in the first direction is smaller than the length of the isolation region in the first direction.

[0009] In some embodiments, at least one of the first and second gate patterns extends along a second direction, and a length of the dummy electrode in the second direction is greater than a length of at least one of the first and second insulating regions in the second direction.

[0010] In some embodiments, the arrangement direction of the first and second gate patterns is set to a first direction, and the length of the isolation region in the first direction is greater than a first specific value, which is set according to process accuracy.

[0011] According to another aspect of the present invention, there is provided a semiconductor device, characterized in that it includes: a substrate, having at least a first active region, the first active region having a source region, a drain region and a channel therebetween, and a first isolation region and a second isolation region being arranged on both sides of the first active region in a first direction; an insulating layer, including a first insulating region arranged on the first active region; a gate layer, having at least a first gate pattern, which is arranged on the first insulating region corresponding to the channel of the first active region, and a first and a second dummy electrode are arranged on both sides of the first gate pattern in the first direction, respectively located on the first and second isolation regions.

[0012] In some embodiments, the first gate pattern extends along a second direction, and lengths of the first and second dummy electrodes in the second direction are greater than lengths of the first insulating region in the second direction.

[0013] In some embodiments, a length of the first gate pattern in the first direction is less than a second specific value.

[0014] In some embodiments, when another gate pattern is disposed on one side of the first gate pattern in the first direction without passing through an isolation region, the first and second dummy electrodes are disposed in a manner of sandwiching the first gate pattern and the another gate pattern.

[0015] In some embodiments, another gate pattern is provided on one side of the first direction of the first gate pattern via an isolation region, and when the length of the isolation region in the first direction is less than a first specific value, the distance between the dummy electrode close to the other gate pattern among the first and second dummy electrodes and the other gate pattern in the second direction is greater than a third specific value.

[0016] According to another aspect of the present invention, a method for manufacturing a semiconductor device is provided, comprising the following steps: preparing a substrate, the substrate having a plurality of active areas and a plurality of isolation regions for isolating the active areas; etching a plurality of grooves for forming isolation regions on the substrate through a mask and filling the grooves with an insulating material; depositing an insulating layer on the active areas and the isolation regions, the insulating layer comprising a plurality of insulating regions corresponding to the plurality of active areas; depositing a gate layer on the insulating layer; and photoetching the gate layer using a mask to form a gate pattern on the insulating region and to form a dummy electrode on the isolation region.

[0017] In some embodiments, when the gate layer is photolithographically processed using a mask, the formation position of the dummy electrode is adjusted by adjusting the mask data.

[0018] According to the semiconductor device of the embodiment of the present invention, a dummy electrode is formed on the isolation region, which can adjust the influence of mechanical stress and thermal stress on the MOS device, improve the carrier transmission performance, and thus enhance the electrical performance of the MOS device.

[0019] According to the semiconductor device manufacturing method of the embodiment of the present invention, it is possible to manufacture a semiconductor device with dummy electrodes formed on the isolation region simply by changing the mask data used when forming the gate pattern. With this slight change in the manufacturing process, the electrical performance of the MOS device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and do not limit the embodiments. In the accompanying drawings, the same reference numerals refer to the same elements, wherein:

[0021] Figure 1 A schematic cross-sectional view of a conventional semiconductor device is shown.

[0022] Figure 2FIG. 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention.

[0023] Figure 3 FIG. 1 is a schematic top view of a semiconductor device according to an embodiment of the present invention.

[0024] Figure 4 FIG. 1 is a schematic top view of a semiconductor device according to another embodiment of the present invention.

[0025] Figure 5 FIG. 1 is a schematic top view of a semiconductor device according to another embodiment of the present invention.

[0026] Figure 6 FIG. 1 is a schematic top view of a semiconductor device according to another embodiment of the present invention.

[0027] Figure 7 (A) to (F) show process diagrams of a method for manufacturing a semiconductor device according to another embodiment of the present invention.

[0028] Figure 8 (A) to (C) are graphs showing a performance comparison between a semiconductor device according to an embodiment of the present invention and a conventional semiconductor device.

[0029] It should be understood that for the sake of simplicity and / or clarity of illustration, the elements shown in the drawings are not necessarily drawn to scale. For example, for the sake of clarity, the dimensions of some elements may be exaggerated relative to other elements. In addition, to make the concepts of the present invention more easily understood, elements known in the art have been omitted from the drawings. The dimensions in the drawings do not represent the exact dimensions and / or dimensional ratios of the various elements depicted herein. DETAILED DESCRIPTION

[0030] In the following description, several specific details are set forth. However, the embodiments described herein can be implemented without certain specific details. In specific embodiments, well-known structures and techniques are not shown in detail to avoid obscuring the understanding of the description.

[0031] Additionally, the phrases "in one embodiment," "in one embodiment," and / or "in some embodiments" may be used repeatedly herein. The phrases generally do not refer to the same embodiment; however, they may. Unless the context indicates otherwise, the terms "including," "having," and "comprising" are synonymous. The phrases "A or B" and "A / B" mean "(A), (B), or (A and B)."

[0032] It should be understood that ordinal adjectives such as "first", "second", "third", etc. may be used in this document to refer to elements. Unless otherwise specified, this is only used to distinguish different elements and does not imply that the elements mentioned must be in a given order in time, space, or other aspects.

[0033] In addition, it should be understood that the terms "upper," "lower," "left," "right," "front," "back," "top," "bottom," "inside," "outside," etc. may be used herein to describe the positions of components. This is merely for the purpose of explaining the relative positions of components, and the use of these terms does not limit the components.

[0034] In addition, it should be understood that the word "about" or "approximately" may be used herein to modify a numerical value, which means that it is within the normal tolerance range of this field. For example, "about" or "approximately" can be understood as being within 1% of the modified numerical value.

[0035] As mentioned above, mechanical stress and thermal stress may be generated during the STI formation process and subsequent manufacturing processes, and the stress may cause changes in the electrical performance of the MOS device.

[0036] The present invention provides a semiconductor device with a dummy electrode formed on an isolation region, which can adjust the influence of mechanical stress and thermal stress on MOS devices, improve carrier transmission performance, and thus enhance the electrical performance of the MOS devices.

[0037] The present invention also provides a method for manufacturing a semiconductor device with dummy electrodes formed on an isolation region. This method enables manufacturing of a semiconductor device with dummy electrodes formed on an isolation region simply by changing the mask data used when forming a gate pattern. This eliminates the need for major changes to the semiconductor device manufacturing process, allowing the use of existing semiconductor device manufacturing methods.

[0038] <Semiconductor devices>

[0039] Below, first, combined Figures 2 and 3 A semiconductor device according to an embodiment of the present invention will be described.

[0040] Figure 2 A schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention is shown. Figure 3 A schematic top view of a semiconductor device according to an embodiment of the present invention is shown.

[0041] like Figure 2 、 3As shown, a semiconductor device 100 according to an embodiment of the present invention is a planar CMOS device, comprising: a substrate 101, on the surface of which at least a first active region 110A and a second active region 110B are formed. The first active region 110A includes a source region 111A, a drain region 112A, and a channel 113A therebetween. The second active region 110B includes a source region 111B, a drain region 112B, and a channel 113B therebetween. A first isolation region 104A is provided between the first active region 110A and the second active region 110B. The first isolation region 104A is, for example, but not limited to, STI (Shallow Trench Isolation) and may be other types of isolation regions.

[0042] An insulating layer 102 is formed on the substrate 101 and includes a first insulating region 120A and a second insulating region 120B respectively disposed on the first active region 110A and the second active region 110B. The insulating layer 102 is, for example, a dielectric layer and may be made of silicon dioxide or a high-k dielectric material.

[0043] A gate layer 103 is formed on the insulating layer 102. The gate layer 103 includes at least a first gate pattern 130A and a second gate pattern 130B. These are disposed on the first insulating region 120A and the second insulating region 120B, corresponding to the channels 113A and 113B of the first active region 110A and the second active region 110B, respectively. A dummy electrode 140A is disposed between the first gate pattern 130A and the second gate pattern 130B, located on the isolation region 104A. The dummy electrode 140A has the same structure as the first gate pattern 130A and the second gate pattern 130B, both being formed by photolithography of the gate layer 103 using a mask. However, no contact electrode is formed on the dummy electrode 140A, meaning no gate voltage is applied to the dummy electrode. The provision of the dummy electrode 140A can mitigate the mechanical and thermal stresses applied to the gate patterns 130A and 130B, improving carrier transport and thereby the electrical performance of the MOS device.

[0044] In some embodiments, the arrangement direction of the first gate pattern 130A and the second gate pattern 130B is set to a first direction (ie, Figure 2 The length of dummy electrode 140A in the first direction is shorter than the length of isolation region 104A in the first direction. Since dummy electrode 140A is made of a conductive material, by making the length of dummy electrode 140A shorter than the length of isolation region 104A, isolation between MOS devices can be ensured.

[0045] In some embodiments, as Figure 3As shown, at least one of the first gate pattern 130A and the second gate pattern 130B is along the second direction ( Figure 3 The dummy electrode 140A extends in the second direction (in the Y direction), and the length of the dummy electrode 140A in the second direction is greater than the length of at least one of the first insulating region 120A and the second insulating region 120B in the second direction. Thus, the dummy electrode 140A is provided throughout the entire extension direction of the first active region 110A and the second active region 110B, which can better adjust the mechanical and thermal stresses applied to the active regions.

[0046] In some embodiments, as Figure 3 As shown, when the length D1 of the isolation region in the direction of arrangement of the first and second gate patterns (the first direction, i.e., the X direction) is less than a first specific value, the dummy electrode is not provided on the isolation region. The first specific value is set based on process accuracy. Since the dummy electrode is formed by photolithography using a mask, it is difficult to form the dummy electrode if the length of the isolation region in the first direction is too small. Therefore, a dummy electrode is formed on the isolation region only when the length of the isolation region in the first direction is greater than the first specific value.

[0047] In some embodiments, the gate pattern is composed of, for example, a polysilicon layer / Ti layer / TiN layer / WSi layer. x The dummy electrode can be formed of a stacked film of a layer / oxide layer, and the dummy electrode can be formed of the same stacked structure as the electrode pattern.

[0048] In the above description, a method of providing one dummy electrode between two gate patterns is described. Similarly, the dummy electrode may be provided in a method of sandwiching one gate pattern between two dummy electrodes.

[0049] Back to Figure 2 The semiconductor device 100 includes a substrate 101 having at least a first active region 110A, the first active region 110A having a source region 111A, a drain region 112A and a channel 113A therebetween, and a first direction ( Figure 2A first isolation region 104A and a second isolation region 104B are provided on both sides (in the X direction in FIG. 2 ); an insulating layer 102 includes a first insulating region 120A provided on a first active region 110A; and a gate layer 103 includes at least a first gate pattern 130A, which is provided on the first insulating region 120A corresponding to a channel 113A of the first active region 110A. A first dummy electrode 140A and a second dummy electrode 140B are provided on both sides of the first gate pattern 130A in the first direction, located on the first isolation region 104A and the second isolation region 104B, respectively. As a result, the first gate pattern 130A is sandwiched between the first and second dummy electrodes 140A, 140B, in the first direction. The first and second dummy electrodes 140A, 140B, adjust the stress applied to the first active region 110A, thereby suppressing degradation of the electrical characteristics of the MOS device.

[0050] In some embodiments, as Figure 3 As shown, the first gate pattern 130A extends along the second direction (the Y direction), and the lengths of the first and second dummy electrodes 140A and 140B in the second direction are greater than the lengths of the first insulating region 120A in the second direction. Thus, the first and second dummy electrodes 140A and 140B are arranged along the entire extension direction of the first active region 110A, which can better mitigate the mechanical and thermal stresses applied to the active region.

[0051] Figure 4 A schematic top view of a semiconductor device according to another embodiment of the present invention is shown. In this embodiment, the length L1 of the first gate pattern 130A in the first direction is less than a second specific value. The second specific value is set, for example, according to the process accuracy and integration. The smaller the length of the gate pattern in the first direction, the more susceptible it is to stress. In addition, the smaller the length of the gate pattern in the first direction (that is, the narrower the channel of the MOS device), the greater the impact on electrical performance. When the length of the gate pattern in the first direction is less than the second specific value, by providing dummy electrodes on both sides of the first direction, the stress applied to the gate pattern can be well adjusted, thereby improving the electrical characteristics of the MOS device. Therefore, it is preferred to provide dummy electrodes on both sides of the gate pattern with a smaller length in the first direction. In addition, from the perspective of increasing integration, when the length of the gate pattern in the first direction is greater than the second specific value, dummy electrodes may not be provided on both sides thereof. For example, Figure 4 If the length L2 of the second gate pattern 130B in the first direction is greater than the second specific value, no dummy electrodes may be provided on both sides of the second gate pattern 130B in the first direction.

[0052] Figure 5FIG2 shows a schematic top view of a semiconductor device according to another embodiment of the present invention. In this embodiment, when another gate pattern 130B is provided on one side of a first gate pattern 130A without passing through an isolation region, a first dummy electrode 140A and a second dummy electrode 140B are provided to sandwich the first gate pattern 130A and the other gate pattern 130B. Thus, the first dummy electrode 140A and the second dummy electrode 140B can adjust the stress applied to the first gate pattern 130A and the other gate pattern 130B, thereby improving the electrical performance of the MOS device.

[0053] Figure 6 A schematic top view of a semiconductor device according to another embodiment of the present invention is shown. In this embodiment, a first dummy electrode 140A and a second dummy electrode 140B are arranged in a manner that clamps a first gate pattern 130A. However, since the second gate pattern 130B and the first gate pattern 130A are arranged close to each other in the first direction (i.e., the isolation area between the first gate pattern 130A and the second gate pattern 130B is less than a first specific value), it is difficult to etch and form the second dummy electrode 140B. Therefore, the second dummy electrode 140B cannot be arranged between the first gate pattern 130A and the second gate pattern 130B, and the length of the second dummy electrode 140B in the second direction needs to be shortened. In this case, the distance between the second dummy electrode 140B and the second gate pattern 130B in the second direction is set to be greater than a third specific value, which is set, for example, based on process accuracy and integration. As a result, it is possible to avoid the distance between the dummy electrode and the gate pattern being too close, thereby suppressing the deterioration of the electrical performance of the MOS device.

[0054] <Method for Manufacturing Semiconductor Device>

[0055] Next, combine Figure 7 (A) to (F) describe a method for manufacturing a semiconductor device according to an embodiment of the present invention.

[0056] First, if Figure 7 As shown in FIG. 1A , a semiconductor substrate 101 is prepared, which includes regions for forming a plurality of active regions 110 and a plurality of isolation regions for isolating the active regions. A photoresist 105 is coated on the substrate to expose portions where the isolation regions are to be formed.

[0057] Then, if Figure 7 As shown in FIG. 1B , the exposed substrate is removed by dry etching (such as reactive ion etching, RIE) to form a plurality of trenches 106 .

[0058] Then, if Figure 7As shown in (C), an insulating material is filled in the trench 106 to form an isolation region 104. The insulating material is, for example, silicon dioxide. The isolation region 104 can then be chemically mechanically polished to make it highly consistent with the substrate surface.

[0059] Then, if Figure 7 As shown in FIG. 1 , an insulating layer (gate oxide layer) 102 , such as a silicon dioxide layer, is deposited on the substrate 101 and the isolation region 104 . The insulating layer 102 includes a plurality of insulating regions 120 corresponding to the plurality of active regions 110 .

[0060] Then, if Figure 7 As shown in (E), a gate layer 103, such as a polysilicon layer or a stacked layer of polysilicon and other materials, is deposited on the insulating layer 102. A photoresist 107 is further coated on the gate layer 103 to remove unnecessary portions.

[0061] Then, if Figure 7 As shown in (F), the gate layer 103 is photolithographically processed to form a gate pattern 130 on the insulating region, and a dummy electrode 140 is formed on the isolation region 104, and the photoresist is removed.

[0062] Afterwards, processes such as source / drain doping and contact electrode production can be carried out to finally complete the manufacture of the semiconductor device.

[0063] The above manufacturing method is different from the traditional MOS device manufacturing method in that Figure 7 The coating position of the photoresist 107 in (E) is different. By coating the photoresist at the position where the dummy electrode is to be formed, the dummy electrode 140 can be easily formed on the isolation region 104, relieving the stress applied to the active region, thereby improving the electrical characteristics of the MOS device.

[0064] In some embodiments, when the gate layer 103 is photolithographically processed using a mask, the formation position of the dummy electrode 140 is adjusted by adjusting the mask data.

[0065] It should be understood that the above description only describes the basic steps of the method for manufacturing a semiconductor device, but this is only an example and the embodiments of the present invention are not limited thereto. Any addition or deletion of known processes is also considered to fall within the scope of protection of the present invention.

[0066] <Performance Evaluation of Semiconductor Devices>

[0067] In order to verify the electrical performance improvement effect of the semiconductor device of the present invention, the inventors conducted the following comparative experiments.

[0068] 100 PMOS devices manufactured using the method of the present invention were selected as an experimental group (with dummy electrodes provided), and 100 PMOS devices manufactured using a standard process were selected as a comparative group (without dummy electrodes provided).

[0069] Comparison of physical parameters: e.g. Figure 8 As shown in Figure (A), when the active device's surrounding environment was modified, the physical parameters of the experimental group (including gate length CD, sidewall angle SWA, and gate edge residual oxide thickness THK) were similar to those of the control group, with variations within one standard deviation. This indicates that the adjustments made to the experimental group did not significantly alter the basic physical structure of the device.

[0070] Improvement of electrical performance: such as Figure 8 As shown in (B), despite having similar physical parameters, the PMOS device in the experimental group exhibits significant improvements in electrical performance. Compared to the control group, while the device's off-state leakage current remains constant at 1000pA / μm, the experimental group's on-state drive current increases by 3%. This demonstrates that the improved layout design enhances device performance and reduces power consumption.

[0071] In addition, if Figure 8 As shown in (C), while maintaining a specific device drive current, the experimental group also significantly reduced the total leakage current at the chip overall circuit test level compared to the control group, by approximately 30%. This demonstrates the significant effect of the semiconductor device of the present invention in reducing energy consumption.

[0072] It should be understood that although the present invention has been described with respect to specific embodiments, those skilled in the art, after reading the specification, may modify one or more features thereof without departing from the spirit and scope of the present invention. Therefore, this specification is not intended to limit the present invention. Instead, the scope of the present invention is defined solely by the appended claims and their equivalents.

Claims

1. A semiconductor device, characterized in that: include: A substrate, having at least a first active region and a second active region formed on a surface thereof, wherein the first and second active regions respectively have a source region, a drain region and a channel therebetween, and an isolation region is provided between the first and second active regions; an insulating layer comprising first and second insulating regions respectively disposed on the first and second active regions; The gate layer has at least a first gate pattern and a second gate pattern, which are respectively arranged on the first and second insulating regions corresponding to the channels of the first and second active regions. A dummy electrode located on the isolation region is arranged between the first and second gate patterns.

2. The semiconductor device according to claim 1, wherein: The first and second gate patterns are arranged in a first direction, and a length of the dummy electrode in the first direction is smaller than a length of the isolation region in the first direction.

3. The semiconductor device according to claim 1 or 2, wherein: At least one of the first and second gate patterns extends along a second direction, and a length of the dummy electrode in the second direction is greater than a length of at least one of the first and second insulating regions in the second direction.

4. The semiconductor device according to claim 1 or 2, wherein: The arrangement direction of the first and second gate patterns is set to a first direction, and the length of the isolation region in the first direction is greater than a first specific value, which is set according to process accuracy.

5. A semiconductor device, characterized in that: include: A substrate having at least a first active region, wherein the first active region has a source region, a drain region, and a channel therebetween, and a first isolation region and a second isolation region are provided on both sides of the first active region in a first direction; an insulating layer comprising a first insulating region disposed on the first active region; The gate layer has at least a first gate pattern, which is arranged on the first insulating region corresponding to the channel of the first active area. First and second dummy electrodes are respectively arranged on both sides of the first gate pattern in the first direction and located on the first and second isolation regions.

6. The semiconductor device according to claim 5, wherein: The first gate pattern extends along a second direction, and lengths of the first and second dummy electrodes in the second direction are greater than lengths of the first insulating region in the second direction.

7. The semiconductor device according to claim 5 or 6, wherein: A length of the first gate pattern in the first direction is less than a second specific value.

8. The semiconductor device according to claim 5 or 6, wherein: When another gate pattern is provided on one side of the first gate pattern in the first direction without passing through an isolation region, the first and second dummy electrodes are provided in a manner of sandwiching the first gate pattern and the another gate pattern.

9. The semiconductor device according to claim 5, wherein: The first gate pattern extends along the second direction, When another gate pattern is provided on one side of the first direction of the first gate pattern via an isolation region, and a length of the isolation region in the first direction is less than a first specific value, A distance between a dummy electrode of the first and second dummy electrodes close to the other gate pattern and the other gate pattern in the second direction is greater than a third specific value.

10. A method for manufacturing a semiconductor device, characterized in that: Including the following processes: preparing a substrate having a plurality of active regions and a plurality of isolation regions for isolating the active regions; etching a plurality of trenches for forming isolation regions on the substrate through a mask and filling the trenches with insulating material; Depositing an insulating layer on the active area and the isolation area, wherein the insulating layer includes a plurality of insulating regions corresponding to the plurality of active areas; depositing a gate layer on the insulating layer; The gate layer is photolithographically processed using a mask to form a gate pattern on the insulating region and a dummy electrode on the isolation region.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: When the gate layer is photoetched using a mask, the formation position of the dummy electrode is adjusted by adjusting the mask data.

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