Semiconductor device and manufacturing method thereof
By adopting substrate bonding and etching methods in semiconductor device manufacturing to form a staggered through-structure, combined with an insulating layer and thinning process, the problem of complex semiconductor device manufacturing process is solved, and the versatility and reliability of the device are achieved.
Patent Information
- Application Number
- CN202410303319.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-15
- Publication Date
- 2025-09-16
AI Technical Summary
The manufacturing process of semiconductor devices is complex, making it difficult to achieve the goals of strong versatility, simple process and high reliability of the manufactured devices.
By bonding the first substrate to the second substrate and etching under specific conditions to form a through-structure, and then bonding to a third substrate with a higher resistivity than the second substrate and etching under low pressure to form staggered through-structures, the process flow is simplified by combining the insulating layer and thinning process.
The semiconductor device has strong versatility, simple process and high reliability of the prepared device, and avoids thermal stress and complex process caused by material differences.
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Figure CN120646755A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor device and a method for manufacturing the same. Background Art
[0002] Semiconductor devices such as integrated circuits (ICs) and microelectromechanical systems (MEMS) typically require complex manufacturing processes, including etching, bonding, and deposition. For example, in the manufacture of inertial sensors, processes such as etching are used to form a movable structure in the substrate, and bonding is used to bond the cover to the substrate.
[0003] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art. Summary of the Invention
[0004] The inventors of this application have discovered that, during the research, development, and manufacturing of semiconductor devices, it is necessary to formulate corresponding process flows in combination with the actual processing capabilities of the processing platform. Therefore, how to design the processing flow of semiconductor devices to achieve goals such as strong versatility, simple process, and high reliability of the prepared devices is a problem that needs to be solved.
[0005] According to one aspect of an embodiment of the present application, a method for manufacturing a semiconductor device is provided, the method comprising:
[0006] bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate;
[0007] Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate;
[0008] Applying a first pressure to a third substrate and the second substrate at a first temperature and in an environment having a first pressure so that the third substrate and the second substrate are bonded together, wherein a second groove is formed on a surface of the third substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first through-structures correspond to positions of the second grooves, the resistivity of the third substrate is higher than that of the second substrate, and the first pressure is lower than standard atmospheric pressure; and
[0009] The third substrate is etched to form a second penetrating structure in the third substrate that penetrates the surface and back surface of the third substrate, wherein the position of the second penetrating structure is staggered with the position of the first penetrating structure in a direction parallel to the surface of the second substrate.
[0010] In some embodiments, the first temperature is 10°C to 30°C; and / or
[0011] The first air pressure is 1*10-6 Pa to 1 Pa; and / or
[0012] The first pressure is 10 Newtons to 50 kilonewtons.
[0013] In some embodiments, the material of the first substrate is silicon; and / or
[0014] The material of the second substrate is silicon; and / or
[0015] The material of the third substrate is silicon.
[0016] In some embodiments, the method further comprises:
[0017] forming an insulating layer on a surface of the first substrate;
[0018] The surface of the first substrate is bonded to the second substrate through the insulating layer.
[0019] In some embodiments, the method further comprises:
[0020] After the second substrate is bonded to the first substrate and before the second substrate is etched to form the first through structure, the second substrate is thinned from the back surface of the second substrate to a first predetermined thickness.
[0021] In some embodiments, the method further comprises:
[0022] After bonding the third substrate to the second substrate and before etching the third substrate to form the second through structure, the third substrate is thinned from the back surface of the third substrate to a second predetermined thickness.
[0023] In some embodiments, thinning the third substrate from the back side of the third substrate to a second predetermined thickness comprises:
[0024] grinding and / or etching the third substrate to thin the third substrate to a third predetermined thickness;
[0025] The third substrate is etched to reduce the thickness of the third substrate from the third predetermined thickness to the second predetermined thickness.
[0026] In some embodiments, the method further comprises:
[0027] An electrode is formed in the second through structure, and the electrode is in contact with the second substrate.
[0028] The present application also provides a semiconductor device, comprising:
[0029] A first substrate having a first groove formed on its surface;
[0030] a second substrate bonded to a surface of the first substrate, wherein a first penetrating structure is formed in the second substrate and penetrates the front and back surfaces of the second substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first penetrating structure correspond to positions of the first grooves; and
[0031] a third substrate bonded to the second substrate,
[0032] A second groove is formed on a surface of the third substrate facing the second substrate. In a direction parallel to the surface of the second substrate, a position of at least a portion of the first penetrating structure corresponds to a position of the second groove. The resistivity of the third substrate is higher than that of the second substrate. At least a portion of the first penetrating structure communicates with at least a portion of the first groove and at least a portion of the second groove to form a communication structure. A first gas pressure within the communication structure is lower than standard atmospheric pressure.
[0033] A second penetrating structure penetrating the front and back surfaces of the third substrate is formed in the third substrate. In a direction parallel to the surface of the second substrate, a position of the second penetrating structure is staggered from a position of the first penetrating structure.
[0034] In some embodiments, the semiconductor device further comprises:
[0035] An electrode is formed in the second through structure, and the electrode is in contact with the second substrate.
[0036] The beneficial effects of the present application are that the method for manufacturing a semiconductor device of the present application can achieve the effects of strong versatility, simple process, and high reliability of the prepared device.
[0037] With reference to the following description and accompanying drawings, specific embodiments of the present application are disclosed in detail, indicating the manner in which the principles of the present application can be employed. It should be understood that the embodiments of the present application are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present application include many variations, modifications and equivalents.
[0038] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.
[0039] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:
[0041] Figure 1 is a schematic diagram of a method for manufacturing a semiconductor device according to Example 1 of the present application;
[0042] Figures 2 to 9 Schematic diagram of the cross-sectional structure of the device in the corresponding steps of the method for manufacturing the semiconductor device according to the embodiment of the present application. DETAILED DESCRIPTION
[0043] The above and other features of the present application will become apparent through the following description with reference to the accompanying drawings. In the description and the accompanying drawings, specific embodiments of the present application are disclosed in detail, which illustrate some embodiments in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described embodiments. On the contrary, the present application includes all modifications, variations and equivalents that fall within the scope of the appended claims.
[0044] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.
[0045] For convenience, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
[0046] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.
[0047] In the description of each embodiment of the present application, for convenience of description, the direction parallel to the surface of the substrate (e.g., the first substrate, the second substrate, or the third substrate) is referred to as the "lateral direction," and the direction perpendicular to the surface of the substrate is referred to as the "longitudinal direction." The "thickness" of each component refers to the dimension of the component in the "longitudinal direction." In the "longitudinal direction," the direction from the first substrate to the second substrate is referred to as the "upward" direction, and the direction opposite to the "upward" direction is referred to as the "downward" direction. It should be noted that the above description of direction or orientation does not limit the direction or orientation of the semiconductor device during actual manufacturing or use.
[0048] Example 1
[0049] Embodiment 1 of the present application provides a method for manufacturing a semiconductor device.
[0050] Figure 1 FIG. 1 is a schematic diagram of a method for manufacturing a semiconductor device according to Example 1 of the present application. Figure 1 As shown, the method includes:
[0051] 101. Bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate;
[0052] 102. Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate;
[0053] 103. At a first temperature and in an environment having a first gas pressure, applying a first pressure to a third substrate and the second substrate to bond the third substrate to the second substrate; a second groove is formed on a surface of the third substrate; in a direction parallel to the surface of the second substrate, positions of at least a portion of the first through-structures correspond to positions of the second grooves; the resistivity of the third substrate is higher than that of the second substrate; and the first gas pressure is lower than standard atmospheric pressure; and
[0054] 104. Etch the third substrate to form a second penetrating structure in the third substrate that penetrates the surface and back surface of the third substrate, wherein a position of the second penetrating structure is staggered with a position of the first penetrating structure in a direction parallel to the surface of the second substrate.
[0055] The manufacturing method of the semiconductor device of the present application has the advantages of strong versatility, simple process, and high reliability of the prepared device.
[0056] In this embodiment, the first, second, and third substrates may be commonly used substrate materials in the semiconductor manufacturing field, such as silicon wafers, silicon-on-insulator (SOI) wafers, silicon-germanium wafers, germanium wafers, gallium nitride wafers, silicon carbide (SiC) wafers, etc., or insulating wafers such as quartz, sapphire, and glass. In addition, various thin films and structures required for semiconductor devices and micro-electromechanical systems (MEMS) devices may be further formed on the surface of the first, second, or third substrates. This embodiment does not limit this.
[0057] For example, the materials of the first substrate, the second substrate and the third substrate are all silicon. As a result, the types of materials in the semiconductor device are fewer, the process difficulty is reduced, and the problem of reduced device reliability caused by differences in physical properties such as thermal expansion coefficients of different materials can be reduced.
[0058] The resistivity of the third substrate is higher than that of the second substrate. Furthermore, the resistivity of the third substrate can also be higher than that of the first substrate. For example, the first and second substrates may be low-resistivity silicon, with a resistivity of, for example, less than or equal to 0.01 Ω*cm; the third substrate may be high-resistivity silicon, with a resistivity of, for example, greater than or equal to 5000 Ω*cm. The higher resistivity of the third substrate avoids the need for complex isolation patterns for different electrical connection areas on the third substrate, thus simplifying the process and reducing photolithography footprints.
[0059] In this application, if Figure 1 As shown, the manufacturing method further includes:
[0060] 100. Form an insulating layer on a surface of a first substrate.
[0061] Operation 100 may be performed before operation 101. Thus, in operation 101, the surface of the first substrate may be bonded to the second substrate via the insulating layer. For example, in operation 100, a silicon oxide layer may be formed as the insulating layer by thermal oxidation; in operation 101, silicon-oxygen bonding is performed between the first substrate and the second substrate.
[0062] In addition, the present application may not have operation 100 , and thus silicon-silicon bonding may be performed between the first substrate and the second substrate.
[0063] In this application, if Figure 1 As shown, the manufacturing method further includes:
[0064] 101a. After bonding the second substrate to the first substrate and before etching the second substrate to form the first through structure, thinning the second substrate from the back side of the second substrate to a first predetermined thickness.
[0065] Operation 101a can be performed before operation 102. Operation 101a can reduce the thickness of the second substrate, thereby shortening the etching time and improving the morphology of the etching boundary during the etching to form the first through-structure in operation 102. The first predetermined thickness is, for example, about 100 μm.
[0066] In operation 102, deep silicon etching may be performed to form a first through-structure. The aspect ratio of the deep silicon etching may be, for example, 25:1, and the critical dimension (CD) may be, for example, 4-5 μm. The first through-structure formed in operation 102 may include a movable structure.
[0067] In operation 102 of the present application, the position of the first through structure corresponds to the position of the first groove, thereby saving photolithography patterns.
[0068] In operation 103 , positions of at least a portion of the first through structures correspond to positions of the second grooves, thereby saving photolithography patterns.
[0069] The first groove and the second groove can provide space for the movable structure in the first penetrating structure to move (for example, provide space for up and down movement).
[0070] In operation 103 of the present application, the first temperature is room temperature, for example, 10°C to 30°C; the first pressure is 1*10 -6 Pa (Pa) ~ 1 Pa (Pa), for example, not higher than 0.1Pa, the lowest can reach 1*10 -6Pa; the first pressure is normal pressure, for example, 10 Newtons (N) to 50 kilonewtons (KN). Thus, operation 103 can utilize a bonding machine to perform high vacuum bonding at normal temperature and pressure. Thus, bonding at normal temperature and pressure differential can avoid a high-temperature annealing process, thereby preventing the first substrate and the second substrate from generating significant thermal stress when experiencing a large temperature difference, thereby improving the reliability of the semiconductor device.
[0071] In this application, if Figure 1 As shown, the manufacturing method further includes:
[0072] 103a. After bonding the third substrate and the second substrate together and before etching the third substrate to form the second through structure, thinning the third substrate from the back side of the third substrate to a second predetermined thickness.
[0073] Operation 103a may be performed before operation 104. Operation 103a can reduce the thickness of the third substrate, thereby shortening the etching time and improving the morphology of the etching boundary during the etching to form the second through structure in operation 104.
[0074] In operation 103a, thinning the third substrate from the back side of the third substrate to a second predetermined thickness may include the following operations:
[0075] ① grinding and / or etching the third substrate to thin the third substrate to a third predetermined thickness; and
[0076] ② Etching the third substrate to thin the third substrate from the third predetermined thickness to the second predetermined thickness.
[0077] Therefore, by performing the processing in operation ① and then performing operation ②, the etching time in operation ② can be shortened.
[0078] In operation 104 , a second through-structure is formed in the third substrate such that a surface of the second substrate can be exposed from a bottom of the second through-structure.
[0079] like Figure 1 As shown, the manufacturing method also includes:
[0080] 105. Form an electrode in the second through-structure, wherein the electrode contacts the second substrate.
[0081] Through operation 105, the electrode can contact the second substrate, thereby leading out the electrical signal on the second substrate. In addition, since the resistivity of the third substrate is relatively high, the electrode material can directly contact the inner wall of the second through structure without generating electrical conduction in the third substrate.
[0082] In contrast, if the resistivity of the third substrate is low, insulating material must first be formed on the inner wall of the second through-structure of the third substrate, and then the electrode must be formed radially inward of the insulating material to prevent the third substrate from conducting electrical signals to the electrode. Furthermore, sometimes it is necessary to form through-isolation trenches in the third substrate to electrically isolate different electrode areas. This results in a complex process, increases the number of materials involved, and increases the number of layouts required for photolithography.
[0083] The manufacturing method of the semiconductor device of the present application is further described below with reference to the accompanying drawings.
[0084] Figures 2 to 9 Schematic diagram of the cross-sectional structure of the device in the corresponding steps of the method for manufacturing the semiconductor device according to the embodiment of the present application.
[0085] like Figures 2 to 9 As shown, in some specific examples, the method for manufacturing a semiconductor device according to an embodiment of the present application includes the following operations:
[0086] Step 1: Figure 2 As shown, a first substrate 1 is provided. The first substrate is, for example, a low-resistance (resistivity is, for example, less than or equal to 0.01Ω*cm) silicon wafer, both sides of which are polished, and the thickness is, for example, 500 microns.
[0087] Step 2: Figure 3 As shown, a first groove 11 is etched on the surface of the first substrate 1 , and the depth of the first groove is, for example, 50 microns. Then, the first substrate 1 is thermally oxidized to form a thermal oxide layer as the insulating layer 12 .
[0088] Step 3: Figure 4 As shown, the surface of the first substrate 1 is bonded to the second substrate 2 (e.g., the surface of the second substrate 2), wherein the second substrate 2 can be a low-resistance silicon wafer, and the bonding is, for example, a silicon-oxygen bond. Then, the second substrate 2 is thinned, for example, by grinding and / or etching to approximately 100 microns (i.e., the first predetermined thickness). The second substrate is, for example, a low-resistance silicon wafer (e.g., a resistivity of less than or equal to 0.01 Ω*cm).
[0089] Step 4: Figure 5 As shown, the second substrate 2 is etched to form a first through-structure 21 that penetrates the front and back surfaces of the second substrate. In a direction parallel to the surface of the second substrate, at least a portion of the first through-structure 21 corresponds to the position of the first groove 11. A movable structure 22 may be formed in at least a portion of the through-structure 21.
[0090] Step 5: Figure 6As shown, a second groove 31 is formed on the surface of the third substrate 3, wherein at least a portion of the second groove 31 corresponds to the position of the first through-structure 21 in a direction parallel to the surface of the second substrate 2. For example, the same photomask is used to etch the first groove 11, the first through-structure 21, and the second groove 31. This reduces the number of photomasks and reduces costs. In addition, the resistivity of the third substrate 3 is higher than that of the second substrate 2. For example, the third substrate 3 is a high-resistance silicon wafer (resistivity, for example, greater than or equal to 5000Ω*cm).
[0091] Step 6: Figure 7 As shown, at a first temperature (eg, 10°C to 30°C), at a first pressure (eg, 1*10 -6 In an environment of 100 Pa to 1 Pa, a first pressure (e.g., 10 Newtons to 50 kilonewtons) is applied to the third substrate 3 and the second substrate 2 to bond the third substrate 3 to the second substrate 2. The bonding in step 6 can be performed, for example, in a vacuum bonding machine at room temperature and pressure. A silicon-silicon bond can be formed between the third substrate 3 and the second substrate 2, or a bonding material such as metal can be formed at the bonding interface.
[0092] By performing bonding at room temperature and pressure in step 6, a high-temperature annealing process can be avoided, thereby preventing thermal stress from being generated in the device. Furthermore, through vacuum bonding, a first air pressure (i.e., a vacuum environment) can be formed within the interconnected structure formed by the first groove 11, the first through-structure 21, and the second groove 31 during the bonding process, thereby simplifying the process. Furthermore, since both the third substrate 3 and the second substrate 2 are made of silicon, bonding the two can make the material more uniform and avoid material complexity.
[0093] like Figure 7 As shown, in step 6, the third substrate 3 may be thinned to a second predetermined thickness. For example, the third substrate 3 may be thinned to about 100 microns by grinding and / or etching, and then further thinned to about 25 microns (i.e., the second predetermined thickness) by etching.
[0094] Step 7: Figure 8 As shown, the third substrate 3 is etched to form a second through-structure 32 that penetrates the front and back surfaces of the third substrate 3. In a direction parallel to the surface of the second substrate 2, the position of the second through-structure 32 is offset from that of the first through-structure 21, thereby allowing the surface of the second substrate 2 to be exposed from the bottom of the second through-structure 32.
[0095] Step 8: Figure 9As shown, an electrode material is deposited within the second through-structure 32 to form an electrode 33, which contacts the second substrate 2. The electrode material is, for example, copper, aluminum, or another conductive material. Step 8 may include, for example, the following sub-steps: depositing (e.g., using methods such as chemical vapor deposition (PVD)) to form a plating seed layer; covering the plating seed layer with a patterned photoresist; performing electroplating to form an electrode material having a predetermined thickness (e.g., 3 microns); removing the photoresist; and etching the plating seed layer to retain the electrode 33.
[0096] In step 8, due to the high resistivity of the third substrate 3, the electrode 33 can directly contact the inner wall of the second through-hole structure 32, without generating electrical conduction in the third substrate 3. This avoids forming an isolation trench in the third substrate 33 or insulating material on the inner wall of the second through-hole structure 32, thereby simplifying the process and reducing the layout required for photolithography.
[0097] The manufacturing method of the semiconductor device of the present application can obtain Figure 9 The semiconductor device shown. The semiconductor device includes:
[0098] A first substrate 1 having a first groove 11 formed on its surface;
[0099] a second substrate 2 bonded to the surface of the first substrate, wherein the second substrate 2 has a first through structure 21 formed therein and penetrating the surface and back surface of the second substrate 2, wherein at least a portion of the first through structure 21 is positioned corresponding to the first groove 11 in a direction parallel to the surface of the second substrate 2; and
[0100] The third substrate 3 is bonded to the second substrate 2 , and the resistivity of the third substrate 3 is higher than that of the second substrate 2 .
[0101] A second groove 31 is formed on the surface of the third substrate 3 facing the second substrate 2 . In a direction parallel to the surface of the second substrate 2 , positions of at least part of the first through structures 21 correspond to positions of the second groove 31 .
[0102] At least a portion of the first through structure 21 is communicated with at least a portion of the first groove 11 and at least a portion of the second groove 31 to form a communicating structure. The first air pressure in the communicating structure is lower than the standard atmospheric pressure.
[0103] A second penetrating structure 32 is formed in the third substrate 3 and penetrates the front and back surfaces of the third substrate 3 . In a direction parallel to the surface of the second substrate 2 , the second penetrating structure 32 is offset from the first penetrating structure by 21 .
[0104] In addition, if Figure 9 As shown, the semiconductor device further includes:
[0105] The electrode 33 is formed in the second penetrating structure 32 , and the electrode 33 is in contact with the second substrate 2 .
[0106] According to the above description, the manufacturing method of the semiconductor device of the present application has the advantages of strong versatility, simple process, and high reliability of the prepared device.
[0107] The present application has been described above in conjunction with specific embodiments. However, those skilled in the art should understand that these descriptions are merely illustrative and are not intended to limit the scope of protection of the present application. Those skilled in the art may make various modifications and variations to the present application based on the spirit and principles of the present application, and such modifications and variations are also within the scope of the present application.
Claims
1. A method for manufacturing a semiconductor device, characterized in that: The method comprises: bonding a surface of a first substrate to a second substrate, wherein a first groove is formed on the surface of the first substrate; Etching the second substrate to form a first through-structure in the second substrate that penetrates the front and back surfaces of the second substrate, wherein positions of at least a portion of the first through-structure correspond to positions of the first groove in a direction parallel to the surface of the second substrate; Applying a first pressure to a third substrate and the second substrate at a first temperature and in an environment having a first pressure so that the third substrate and the second substrate are bonded together, wherein a second groove is formed on a surface of the third substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first through-structures correspond to positions of the second grooves, the resistivity of the third substrate is higher than that of the second substrate, and the first pressure is lower than standard atmospheric pressure; and The third substrate is etched to form a second penetrating structure in the third substrate that penetrates the surface and back surface of the third substrate, wherein the position of the second penetrating structure is staggered with the position of the first penetrating structure in a direction parallel to the surface of the second substrate.
2. The method according to claim 1, wherein The first temperature is 10°C to 30°C; and / or The first air pressure is 1*10 -6 Pa~1 Pa; and / or The first pressure is 10 Newtons to 50 kilonewtons.
3. The method according to claim 1, wherein The material of the first substrate is silicon; and / or The material of the second substrate is silicon; and / or The material of the third substrate is silicon.
4. The method according to claim 1, wherein The method further comprises: forming an insulating layer on a surface of the first substrate; The surface of the first substrate is bonded to the second substrate through the insulating layer.
5. The method according to claim 1, wherein The method further comprises: After the second substrate is bonded to the first substrate and before the second substrate is etched to form the first through structure, the second substrate is thinned from the back surface of the second substrate to a first predetermined thickness.
6. The method according to claim 1, wherein The method further comprises: After bonding the third substrate to the second substrate and before etching the third substrate to form the second through structure, the third substrate is thinned from the back surface of the third substrate to a second predetermined thickness.
7. The method according to claim 1, wherein Thinning the third substrate from the back side of the third substrate to a second predetermined thickness comprises: grinding and / or etching the third substrate to thin the third substrate to a third predetermined thickness; The third substrate is etched to reduce the thickness of the third substrate from the third predetermined thickness to the second predetermined thickness.
8. The method according to claim 1, wherein The method further comprises: An electrode is formed in the second through structure, and the electrode is in contact with the second substrate.
9. A semiconductor device, characterized in that: The semiconductor device comprises: A first substrate having a first groove formed on its surface; a second substrate bonded to a surface of the first substrate, wherein a first penetrating structure is formed in the second substrate and penetrates the front and back surfaces of the second substrate, and in a direction parallel to the surface of the second substrate, positions of at least a portion of the first penetrating structure correspond to positions of the first grooves; and a third substrate bonded to the second substrate, A second groove is formed on a surface of the third substrate facing the second substrate. In a direction parallel to the surface of the second substrate, a position of at least a portion of the first penetrating structure corresponds to a position of the second groove. The resistivity of the third substrate is higher than that of the second substrate. At least a portion of the first penetrating structure communicates with at least a portion of the first groove and at least a portion of the second groove to form a communication structure. A first gas pressure within the communication structure is lower than standard atmospheric pressure. A second penetrating structure penetrating the front and back surfaces of the third substrate is formed in the third substrate. In a direction parallel to the surface of the second substrate, a position of the second penetrating structure is staggered from a position of the first penetrating structure.
10. The semiconductor device according to claim 9, wherein The semiconductor device further includes: An electrode is formed in the second through structure, and the electrode is in contact with the second substrate.